Electronic device

Abstract

To provide a new electronic device, or an electronic device having a new form.SOLUTION: An electronic device includes a support and a display portion. The support has a curved surface. The display portion is provided over the support. The display portion has a top surface and a side surface in contact with at least one side of the top surface. The side surface has a curved surface. The top surface includes a first display region. The side surface includes a second display region. The first display region and the second display region are continuously provided.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention is an electronic device, a display device, a light-emitting device, a power storage device, a driving method thereof, or or a method for producing them.

[0002] In this specification, electronic equipment refers to any device that operates by supplying power. Electronic devices having a power supply, electronic devices having a storage battery as a power supply, and electro-optical devices , an information terminal device having a storage battery, and the like are all electronic devices. The technical field of one embodiment of the invention disclosed in this specification etc. is not limited to the above. Alternatively, one aspect of the present invention relates to a process, a machine, relating to the manufacture or composition of matter Therefore, the technical field of one embodiment of the present invention disclosed in this specification is , semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, memory devices, imaging devices, Examples of the imaging device include a driving method thereof and a manufacturing method thereof. do. [Background technology]

[0003] In recent years, display devices that are worn on the human body, such as head-mounted displays, have been proposed. These are called head-mounted displays or wearable displays. There is a demand for lighter and smaller electronic devices used in daily life, such as hearing aids.

[0004] Furthermore, electronic book readers equipped with flexible display devices are disclosed in Patent Documents 1 and 2. is disclosed in. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent Publication No. 2010-282181 [Patent Document 2] Patent Publication No. 2010-282183 Summary of the Invention [Problem to be solved by the invention]

[0006] To make the display device worn on the human body more comfortable for the user, it is necessary to reduce its weight. Furthermore, there is a demand for miniaturization and weight reduction of the entire electronic device, including the display device drive unit and power supply. It is necessary to make it a reality.

[0007] Furthermore, the display device worn on the human body and the electronic device having the display device are portable. It is required to be easy to bend and durable.

[0008] An object of one embodiment of the present invention is to provide a novel electronic device. An object of one embodiment is to provide an electronic device having a novel configuration.

[0009] Another object of one embodiment of the present invention is to provide a novel display device. An object of one embodiment of the present invention is to provide a display device having a novel structure.

[0010] Another aspect of the present invention is to provide an electronic device that is worn on the body when used. Another embodiment of the present invention is to provide an electronic device that is worn on a wrist. This is one of the challenges.

[0011] Another object of one embodiment of the present invention is to provide a display device that is worn on the body when used. Another embodiment of the present invention is to provide a display device that is worn on the arm. This is one of the challenges.

[0012] Another embodiment of the present invention is to provide a power storage device that is worn on a part of the body. Another object of the present invention is to provide a power storage device that is worn on an arm. This is one of the challenges.

[0013] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. It is possible to extract other issues from the drawings, claims, etc. [Means for solving the problem]

[0014] One embodiment of the present invention is a display device including a support and a display portion, the support having a curved surface, The display unit is provided on the support, and has a top surface and a side surface that contacts at least one side of the top surface. The side surface has a curved surface, a first display area is provided on the top surface, and a second display area is provided on the side surface. an electronic device in which a first display area and a second display area are provided, and the first display area and the second display area are provided continuously; In the above configuration, the side surface may have a part of the side surface of a cylinder or an elliptic cylinder. It is preferable that:

[0015] Alternatively, one embodiment of the present invention is a display device including a support and a display unit, the support having a curved surface, The display unit is provided on the support, and the display unit has a housing, and the housing has an upper surface and and a side surface in contact with at least one side of the first display area, and a top surface of the first display area. A second display area is provided on the side surface, and the side surface has a curved surface. The display area is an electronic device that is provided continuously. The surface preferably comprises a portion of the side surface of a circular or elliptical cylinder.

[0016] In the above configuration, the support has a band-shaped region, and the width of the band-shaped region of the support is It is preferable that the width is smaller than the width of the display unit.

[0017] In the above configuration, the electronic device has a housing, and the display unit is in contact with the outside of the housing. is preferred.

[0018] In the above configuration, it is preferable that the support has a function of being attached to the cylindrical body.

[0019] In the above configuration, the electronic device is preferably worn on the user's arm in contact with the support. I wish. [Effects of the Invention]

[0020] According to one embodiment of the present invention, a novel electronic device can be provided. In this manner, electronic devices having novel configurations can be provided.

[0021] According to one embodiment of the present invention, a novel display device can be provided. According to one embodiment of the present invention, a display device having a novel configuration can be provided.

[0022] According to another aspect of the present invention, there is provided an electronic device that is worn on a part of the body. Furthermore, one aspect of the present invention provides an electronic device that is worn on the wrist. can be done.

[0023] According to another embodiment of the present invention, a power storage device that is worn on a part of the body when used is provided. According to one embodiment of the present invention, a power storage device that is worn on an arm can be provided. can be done.

[0024] Alternatively, according to one aspect of the present invention, a display device that is worn on the body when used can be provided. According to one embodiment of the present invention, a display device that is worn on the arm can be provided. can.

[0025] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other effects from the descriptions in the aspects and claims. [Brief explanation of the drawings]

[0026] [Figure 1] 1A to 1C are a perspective view, a top view, and a cross-sectional view illustrating an electronic device of one embodiment of the present invention. [Figure 2] 1A and 1B are cross-sectional views illustrating electronic devices according to one embodiment of the present invention. [Figure 3] 1A to 1C are a perspective view, a top view, and a cross-sectional view illustrating an electronic device of one embodiment of the present invention. [Figure 4] 1A and 1B are a top view and a cross-sectional view illustrating an electronic device of one embodiment of the present invention. [Figure 5] 1A and 1B are perspective views illustrating electronic devices according to one embodiment of the present invention. [Figure 6] 1A and 1B are perspective views and a top view illustrating an electronic device of one embodiment of the present invention. [Figure 7] 1A and 1B are perspective views and a top view illustrating an electronic device of one embodiment of the present invention. [Figure 8] 1A and 1B are perspective views and a top view illustrating an electronic device of one embodiment of the present invention. [Figure 9] 1A and 1B are perspective views illustrating electronic devices according to one embodiment of the present invention. [Figure 10] 1A and 1B illustrate one embodiment of the present invention. [Figure 11] 1A to 1C are a perspective view, a top view, and a cross-sectional view illustrating an electronic device of one embodiment of the present invention. [Figure 12] 1A to 1C are a perspective view, a top view, and a cross-sectional view illustrating an electronic device of one embodiment of the present invention. [Figure 13] 1A and 1B are a top view and a cross-sectional view illustrating an electronic device of one embodiment of the present invention. [Figure 14] 1A and 1B are perspective views illustrating electronic devices according to one embodiment of the present invention. [Figure 15] 1A to 1C are a perspective view, a top view, and a cross-sectional view illustrating an electronic device of one embodiment of the present invention. [Figure 16] 1A to 1C are cross-sectional views illustrating a method for manufacturing an electronic device according to one embodiment of the present invention. [Figure 17] FIG. 1 illustrates an example of a display unit of one embodiment of the present invention. [Figure 18] 1A and 1B illustrate one embodiment of the present invention. [Figure 19] 1 shows an example of the configuration of a display panel according to an embodiment. [Figure 20] 1 shows an example of the configuration of a display panel according to an embodiment. [Figure 21] 1A and 1B are diagrams illustrating examples of a display panel according to an embodiment. [Figure 22] 1A and 1B are diagrams illustrating examples of a display panel according to an embodiment. [Figure 23] FIG. 1 is a perspective view illustrating one embodiment of the present invention. [Figure 24] FIG. 1 illustrates an external appearance of a storage battery according to one embodiment of the present invention. [Figure 25] FIG. 1 is a cross-sectional view of a storage battery according to one embodiment of the present invention. [Figure 26] FIG. 10 is a diagram illustrating the radius of curvature of a surface. [Figure 27] FIG. 2 is a diagram illustrating the radius of curvature of a film. DETAILED DESCRIPTION OF THE INVENTION

[0027] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the following description, and it is understood by those skilled in the art that various modifications may be made to the modes and details thereof. The present invention will be easily understood by reading the following description of the embodiments. It is not something that is done.

[0028] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0029] In each figure described in this specification, the size, layer thickness, or area of ​​each component is The figures may be exaggerated for clarity and are not necessarily limited to that scale. stomach.

[0030] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0031] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be used interchangeably with "conductive It may be possible to change the term to "film." Alternatively, for example, It may be possible to change the term to "insulating layer."

[0032] In this specification, "parallel" means that two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Parallel" refers to a state in which two lines are arranged at an angle of between -30° and 30°. Also, "perpendicular" means that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it also includes cases where the angle is between 85° and 95°. This refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0033] In this specification, when the crystal is a trigonal or rhombohedral crystal, it is represented as a hexagonal crystal system. vinegar.

[0034] In this specification, a connector, such as an FPC (F lexible printed circuit) or TCP (Tape Card A module with a printed wiring board (PCB) attached to the TCP. or a module on which a display element is formed. The module in which IC (integrated circuit) is directly mounted using the "Glass" method includes a display device. This may occur.

[0035] (Embodiment 1) In this embodiment, an example of an electronic device 100 of one embodiment of the present invention will be described.

[0036] 1A is a perspective view of the electronic device 100. FIG. 1B is a top view of the electronic device 100. 1(C) is a cross section taken along the dashed line A-B in FIG. 1(B), and FIG. 1(D) is a cross section taken along the dashed line A-B in FIG. 1(B) and 1(C) are cross sections taken along dashed line C-D in FIG. -B and the dashed dotted line C-D are approximately perpendicular to each other.

[0037] The electronic device 100 includes a display unit 102 and a support 125. The device may have a housing 126.

[0038] As shown in FIGS. 1C and 1D, the display unit 102 is in contact with the outside of the housing 126, for example. In addition, when the display unit 102 is provided on the outside of the housing 126, A second housing may be provided in contact with the outside of the display unit 102. Alternatively, a protective film may be provided on the display unit 102. A cover or the like may be provided.

[0039] The display unit 102 has a display area on a flexible film. The display unit 102 is provided with one or more flexible films. It may also have a driver circuit.

[0040] As shown in FIGS. 1A and 1C, the display unit 102 has a top surface and at least one The first side surface is in contact with one of the sides. The first side surface has a curved surface. The child device 100 may have a second side that has a curved surface and is generally opposite the first side. The display unit 102 may also have a rear surface that faces a part of the top surface.

[0041] The first side surface and the second side surface have a shape of a part of the side surface of, for example, a cylinder or an elliptical cylinder. The first side surface and the second side surface may be curved surfaces whose curvature radii change continuously, for example. The shape of the side surface may have a tangent line from the upper surface to the side surface or from the side surface to the lower surface. It is preferable that the curved surface has a curved surface that changes continuously. The side surfaces of the casing are continuous, for example, without any corners between the upper surface and the side surface or between the side surface and the lower surface. It is preferable that

[0042] In particular, the shapes of the first and second sides are obtained by deforming the plane without expanding or contracting. Preferably, the adhesive has a developable surface that can be applied to the adhesive.

[0043] Here, an example in which the display unit 102 of the electronic device 100 has two sides has been described. The display unit 102 may have three or more sides.

[0044] In addition, in FIG. 1A, the protrusion on the first side surface of the display unit 102 is formed on the support 125. In FIG. 1(C), the first side surface is, for example, approximately perpendicular to the convex portion of the curved surface. The second side surface has a surface that is, for example, approximately perpendicular to the dashed dotted line AB.

[0045] As shown in FIG. 1C, the electronic device 100 includes a circuit board 106 and a circuit board 107. The circuit board 106 and the circuit board 107 are preferably mounted inside the housing 126. It is preferable that the ion beam is located in the region of the ion beam.

[0046] The circuit board 106 may be, for example, a flexible resin film on which wiring is provided. PC (Flexible Printed Circuit) The circuit board 106 can be electrically connected to the drive circuit of the display unit, for example. It is preferable that the oscillating element is connected to

[0047] For example, when the electronic device 100 has a storage battery, the circuit board 107 is electrically connected to the storage battery. It is preferable to connect the circuit board 107 to a power supply such as a storage battery. A converter circuit is preferably provided.

[0048] The display unit 102 has a display panel. The display unit 102 also has a touch sensor on its surface. It is preferable to have a

[0049] The touch sensor of the display unit 102 may be, for example, a sheet-shaped capacitance type. The capacitive touch sensor may be configured to be superimposed on the display panel. There are surface capacitive touch panels, projected capacitive touch panels, and other touch panels.

[0050] The projected capacitive type is mainly divided into self-capacitance type and mutual capacitance type, which differ mainly in the driving method. The mutual capacitance method is preferable because it allows simultaneous multi-point detection.

[0051] Or, the display panel itself has the function of a touch sensor. An in-cell type touch panel may be used. A touch sensor of a capacitance type may be applied, or an optical touch sensor using a photoelectric conversion element may be applied. may be applied.

[0052] As shown in FIG. 1(D), the display unit 102 and the housing 126 are mounted on a support 125. It is preferable that

[0053] The electronic device 100 can be worn on the arm of a human body, for example. As shown in (A) and (B), the support 125 of the electronic device 100 is shaped to fit the arm, for example. It is preferable that the electronic device 100 be attached to the arm of a robot or the like. Examples of robots include working robots, robots attached to equipment, humanoid robots, The electronic device 100 has the support 125, and thus the electronic device 100 can be When attached to a part of the human body, the position is unlikely to shift. The position is fixed.

[0054] The support 125 preferably has a rounded shape. For example, it is preferable that the support 125 has a shape that conforms to a curved surface. It is preferable that the shape is such that it fits the side of the pillar. The shape is like the letter "C" in the picture, an oval, or a cut-off oval. By having such a rounded shape, it is possible to easily attach it to the body such as the arm. Furthermore, the electronic device 100 can be adapted to the shape of the arm and cover the arm. The support 125 may have a cross-sectional shape along three sides of a rectangle.

[0055] The support 125 may have a shape that conforms to the shape of a cylindrical body, for example. For example, the support 125 may have a shape along the lines of a cylinder, an elliptical cylinder, or a square cylinder. It may have a shape that conforms to the shape of an awl, such as an awl.

[0056] Furthermore, it is preferable that the support 125 has a function of being attached to a cylindrical body. Examples of such shapes include pillars, cones, and cylinders whose side faces change direction continuously. can be done.

[0057] Furthermore, it is preferable that the support 125 has flexibility. This makes it easy to put on and take off from, for example, the arm. When attaching or detaching 00, the area with a large radius of curvature in the cross-sectional shape hardly deforms. It is preferable that the end portion is shaped to be flexible.

[0058] The housing 126 may be flexible, for example. In some cases, the display unit 102 can be bent in the CD direction shown in FIG. 1(D), for example. By bending the display unit 102, for example, when wearing or removing the display unit 102 from the arm, This is preferable because it may make destruction less likely to occur.

[0059] The housing 126 may be made of, for example, glass, quartz, plastic, a flexible plate, or a resin adhesive. Examples include laminated films, paper containing fibrous materials, and base films. Examples of the glass include barium borosilicate glass, aluminoborosilicate glass, and soda lime glass. Examples of flexible substrates, laminated films, and base films include: Examples include polyethylene terephthalate (PET), polyethylene terephthalate (PE ... Polyethylene naphthalate (PEN), Polyethersulfone (PES), Polytetrafluoroethylene Plastics such as PTFE (Polyethylene) are also used. Examples of the resin include synthetic resins such as polypropylene, polyester, and polyethylene. Examples include polyvinyl fluoride, polyvinyl chloride, etc. Alternatively, examples include polyamide, Polyimide, aramid, epoxy, or inorganic vapor deposition film. Stainless steel, stainless steel foil, tungsten, tungsten Plates with foil, paper or semiconductors (e.g. single crystal or silicon) may also be used. .

[0060] The material that can be used for the support 125 is, for example, the same as that that can be used for the housing 126. Reference may be made to the description of the materials used.

[0061] A modified example of the cross section shown in FIG. 1(C) is shown in FIG. 2. In FIG. 1(C), the cross section of the side of the display unit is semi-transparent. In contrast to the circular shape of the display shown in Figure 2(A), the cross section of the side of the display unit is shaped like a quarter circle. As shown in Figures 2(B) and (C), one side of the display unit is flat. In FIG. 2(B), the side surface having a curved surface is a cross section along a semicircle. In FIG. 2(C), the curved side surface has a cross section along a quarter circle.

[0062] 3A is a perspective view of the electronic device 100. FIG. 3B is a top view of the electronic device 100. FIG. 3(C) shows a cross section taken along the dashed line A-B in FIG. 3(B), and FIG. 3(D) shows a cross section taken along the dashed line A-B in FIG. 3A and 3B show cross sections taken along dashed lines C and D in the electronic device 100 shown in FIG. The display device 102 includes a display unit 102, a housing 126, and a support 125. The display unit 102 has a curved surface. The electronic device 100 has a first side surface having a curved surface and a surface that is generally oriented in the same direction as the first side surface. In comparison with the electronic device 100 shown in FIG. 3(A), the orientation of the display unit 102 as viewed from above is different by, for example, 90 degrees. In this case, for example, the first side surface and the second side surface have a surface that is approximately perpendicular to the dashed dotted line C-D. .

[0063] As shown in FIG. 1A and FIG. 3A, the display unit 102 has, for example, a substantially rectangular upper surface and It has a first side surface and a second side surface that contact two opposing sides of the top surface.

[0064] Here, the top surface is a display area 151, the first side surface is a display area 152, and the second side surface is a display area 153. 53, and preferably a plurality of display areas are provided.

[0065] The display area 152 is formed by the first side surface, the top surface adjacent to the first side surface, and the The display area 153 may be provided on two sides, the first side and the second side. , may be provided across two surfaces, the upper surface and the lower surface adjacent to the second side surface.

[0066] By adopting such a configuration, unlike conventional electronic devices, the display is only displayed on the upper surface of the display unit 102. In particular, it is possible to display on two or more sides of the display unit 102. Providing a display area along the side is preferable because it increases the variety of displays.

[0067] A display area 151 provided on the top surface of the display unit 102 and each display area arranged along the side surface The areas may be used as independent display areas to display different images, etc., or either one may be used as an independent display area to display different images, etc. An image may be displayed across two or more display areas. The image displayed in the display area 151 on the top surface is displayed on the Alternatively, the images may be displayed continuously in the display area 152 or the like.

[0068] In addition, in the display unit 102 of the electronic device, the first side surface and the second side surface having a curved surface are When the display area is provided only on the upper surface of the display unit 102 In comparison with the above, the surface area of ​​the display region of the display unit 102 can be made larger. For example, as shown in FIG. 1B, the width 201 of the display area of ​​the display unit 102 is It is preferable that the width is larger than the width 202. In addition, in FIG. The width of the support 125 is approximately the same as that of the support 125. This allows more information to be displayed. , it can be seen from a wider range, improving visibility.

[0069] Modifications of the structures shown in Figures 1(B) and (C) are shown in Figures 4(A-1) and (B-1). In FIGS. 4(A-1) and 4(B-1), the width 201 of the display unit 102 is The width 203 of the top surface of the display unit 102 is wider than the width 202 of the support 125. Narrower than 02.

[0070] Another modification of the structure shown in FIGS. 1(B) and (C) is shown in FIGS. 4(A-2) and (B-2). 4(A-2) and (B-2), the width 201 of the display unit 102 is The width 203 of the upper surface of the display unit 102 is wider than the width 202 of the support 125. The width 203 of the upper surface of the display unit 102 is wider than the width 202 of the support 125. If the width is too wide, it may be easier to touch part of the arm when wearing it on the arm. Even in such a case, the side surfaces of the display unit 102 are curved and rounded, so that the display unit 102 can be worn comfortably. It is possible to realize this.

[0071] FIG. 5 shows an example of a state in which the display unit 102 of the electronic device 100 shown in FIGS. 1 and 2 is used. In FIG. 5A, a display area 151 provided on the upper surface of the display unit 102 displays image information. information 167, character information 162, and a plurality of icons associated with applications, etc. 161, etc. are displayed in the display area 152 provided on the side of the display unit 102. In addition, the display area 161 displays icons 161 associated with applications, etc. 52 includes a button for powering on the electronic device 100 and a button for locking or starting the screen. It is preferable to provide buttons, etc. These buttons can be operated by touch sensors. It is preferable to use a button that can be operated by a touch sensor. Compared to the case where a button (a physically provided button) is provided, the button part and the connection to the button are Therefore, the volume occupied by the peripheral portion of the electronic device 100 can be further reduced. This is preferable because the thickness of the electronic device 100 can be further reduced. This can improve the ease of wearing the electronic device on the arm, for example. The device may have both a sensor-operable button and a mechanical button.

[0072] In addition, when a call or email is received, not only the display area 151 but also the display area In a display area provided along the side, such as area 152, sender information (e.g., the sender's name, In FIG. 5(A), the email address may be displayed. This shows an example in which caller information is displayed in a scrolling manner in the display area 152 when a call is received. do.

[0073] As shown in FIG. 5B, image information is continuously displayed in the display areas 151 to 153. The display area 151 to the display area 153 may be connected to each other. By using it as a continuous display area, the display area can be used more widely. For example, compared to when only the display area 151 is used to display image information 167, In addition, the display area can be viewed from a wider angle, improving visibility. This allows for more powerful image information.

[0074] The display area of ​​the display unit 102 may be a circular or elliptical display area. 6A is a top view of the display unit 102 before it is installed in the housing 126. (F) shows an electronic device 100 provided with a display unit 102 having a circular display area. Among the display areas B) to F), FIG. 6D shows three circular display areas (display area 151 152 and 153), and the other figures show examples with circular display areas. In this example, the display area has two display areas (display area 151 and display area 152). The display area 152 and the display area 153 have curved surfaces. In FIG. 6(C), the curved side faces are in contact with the top surface and the left side of the top surface. 6(D) shows the top surface and the curved side surfaces that contact the left and right sides of the top surface. In Fig. 6(B), the curved surface is in contact with the upper surface and the lower edge of the upper surface. In Fig. 6(C), the curved surface is in contact with the upper surface and the upper edge of the upper surface. An example is shown in which a display area is provided on a side surface that has a curved surface in contact with the display area.

[0075] In addition, during standby time when the electronic device is not in use, The display of the display area 151 provided along the side is turned off (for example, black display), and the display area 152 provided along the side is turned off (for example, black display). It is also possible to display information only in the display area 152, etc., which is larger than the other areas. By not displaying 1, power consumption during standby can be reduced.

[0076] It should be noted that electronic device 100 does not necessarily need to have display area 153.

[0077] The electronic device 100 may also have a button. 7(B) shows an example in which the device 100 has a button 128. 7(C) and (D) show the top view of the area surrounded by the dashed line in FIG. 7(A) and (B). 7(A) to 7(D) show enlarged views of the areas covered by the buttons 128. However, the shape and function of the button are not limited to this.

[0078] FIG. 8A shows an example in which the electronic device 100 shown in FIG. 2A has a button 128. 8(B) shows a top view of FIG. 8(A). As shown in FIG. 8, the electronic device 100 has a button 1 The button 128 may be, for example, the mechanical button described above. That's fine.

[0079] 2A. In addition, a modified example of the electronic device 100 shown in FIG. 2A is shown in FIG. 9. In FIG. 9, A notch is provided in a part of the first side surface, in this case, about half of the upper side, and a button 128 is provided in that area. Here is an example of setting

[0080] FIG. 10(A) shows an example in which the electronic device 100 is worn on the arm. 10(A) shows an enlarged view of the area of ​​the electronic device 100 enclosed by the dashed line.

[0081] For example, by displaying the sender information etc. when receiving the above-mentioned email in the display area 152, Easy to see.

[0082] Also, for example, as shown in FIG. 10(B), a display area 153 may be used as lighting.

[0083] The display unit 102 of the electronic device 100 shown in FIGS. 1 and 3 is provided on the outside of the housing 126. Here, as shown in FIG. 11, the display unit 102 is mounted on the housing 12. When the display unit 102 is provided inside the housing 126, Preferably, 6 is light-transmitting.

[0084] 11(A) is a perspective view of the electronic device 100. FIG. 11(B) is a perspective view of the electronic device 100. 11(C) is a cross-sectional view taken along the dashed line A-B in FIG. 11(B), and is a cross-sectional view taken along the dashed line A-B in FIG. ) show the cross section of the dashed line CD shown in FIG. 11(B). The display unit 102 includes a housing 126, a circuit board 106, and a circuit board 107. 102 has a first side surface having a curved surface. 11(C) and (D) may have a second side generally opposite the first side. As such, at least a part of the display unit 102 is located inside the housing 126. The substrate 106 and the circuit board 107 are preferably located inside the housing 126. Preferably, the circuit board 106 is electrically connected to the display unit 102 .

[0085] By providing the display unit 102 inside the housing 126, a sturdy structure can be achieved, and the display unit 102 can be easily handled even when dropped. This may make the display unit 102 less likely to break when it hits another object due to a crash or collision.

[0086] 12(A) is a perspective view of the electronic device 100. FIG. 12(B) is a perspective view of the electronic device 100. 12(B) is a cross section taken along the dashed line A-B in FIG. 12(D) shows a cross section taken along the dashed line C-D in FIG. 12(B). ), the display unit 102 has a substantially quadrilateral upper surface, and the first and second edges of the upper surface are in contact with the four sides of the upper surface. The first to fourth side surfaces are curved. The first side surface and the second side surface are, for example, as shown in FIG. 12(C), roughly defined by a dashed line A-B. The third and fourth sides have a vertical surface, and are connected at one point as shown in FIG. 12(D). The upper surface and the first to fourth side surfaces may have a surface that is approximately perpendicular to the chain line C-D. Providing each of these display areas is preferable because it increases the variety of displays.

[0087] Text information 164 and the like flows (moves) across multiple display areas of electronic device 100. In this way, the image can be displayed on two or more screens of the display unit 102. By displaying information, users can see information regardless of the orientation of the electronic device, for example, when receiving a call. It can prevent you from missing out.

[0088] Here, as shown in the example of FIG. 13, in the electronic device 100, the support 125 is a pair of The device may have two structures, and the two structures may be positioned so as to face each other across the housing 126. 13A shows a top view of the electronic device 100, and FIGS. 13B and 13C show the top view of the electronic device 100 shown in FIG. 3(A) is a cross section shown by dashed lines AB and CD. 13(E) and (F) show the top view of the device 100, and the dashed line AB in FIG. 13(D) shows the top view of the device 100. 13A to 13C are cross sections indicated by lines C and D. In FIGS. 13A to 13C, the support 125 is 13(D) to 13(F) show an example in which the support 125 is provided in contact with the lower surface of the support 125. is provided in contact with the side surface of the housing 126.

[0089] Here, the support 125 of the electronic device 100 may have, for example, a belt-like shape. As shown in the perspective view of FIG. 14(A), the belt-like support 125 has high flexibility. For example, the support 125 may have higher flexibility than the housing 126. It is preferable that the support 125 and the arm are flexible when worn on the arm, for example, because the support 125 and the arm are flexible. The gap between the lens and the lens can be reduced, improving the ease of wearing. By making it into a chain shape, it becomes easy to deform and improves the wearing comfort. can.

[0090] Fig. 15(A) shows an example of a perspective view of the electronic device 100. Fig. 15(B) shows the same as Fig. 15(A). 15(B) shows a top view of the electronic device 100 shown in FIG. 15(D) shows an enlarged view of the area surrounded by the dashed line in FIG. 15(B). In the example shown in FIG. 15(B), the cross section of the electronic device 100 is arch-shaped. 02 is located adjacent to the display area 151 having an arch-shaped cross section, The display unit 102 has a display area 152 that has a curved surface extending from the side surface to the rear surface. The rear surface is a surface facing the display area 151 having an arched cross section, for example. be.

[0091] In FIG. 15, the display area is provided on only one side of the display unit 102. For example, a display area may be provided adjacent to the display area 151 and facing the display area 152. A corresponding third display area may be provided.

[0092] As shown in FIG. 15(D), the electronic device 100 is electrically connected to the display unit 102. A circuit board 106, a circuit board 107 electrically connected to the circuit board 106, and a circuit board 10 7 and a storage battery 108 electrically connected to the

[0093] Here, the storage battery 108 is a thin storage battery using a laminate film for the exterior body, for example. By using a flexible laminate film for the exterior, This allows the storage battery 108 to be flexible. Button-type batteries, square-type batteries, cylindrical-type batteries, etc. can be used. FIG. 15(D) shows an example in which a thin flexible storage battery is used as the storage battery 108. is doing.

[0094] In addition, in the examples of the electronic device 100 shown in FIGS. 1 to 14, the electronic device 100 is a storage For the storage battery, please refer to the description of the storage battery 108. Here, by using a thin flexible storage battery as the storage battery 108, By using a thin flexible battery as the battery 108, the display unit 1 The storage battery can be arranged to fit the curved surface of the housing 126 or the like. 10 is flexible and therefore easily deformed. 6 and the circuit board 107 are arranged, the battery 108 is deformed to fit the empty space. Therefore, the thickness of the electronic device 100 can be reduced in some cases. Yes, and it is preferable.

[0095] Next, an example of a method for manufacturing the electronic device 100 will be described with reference to FIG. 16(A-1) to (A-3) show the cross section shown in FIG. 1(C), and FIGS. 16(B-1) to (B-3) show the cross section shown in FIG. 1(D). This shows how to create the cross section shown in FIG.

[0096] First, as shown in FIGS. 16(A-1) and 16(B-1), the display unit 102, the housing 126, and Here, an example in which the housing 126 has an opening is shown, but the housing 126 does not have an opening. The housing 126 has a rounded portion 136 in the cross section shown in FIG. 16(A-1). A circuit board 106 is connected to the display unit 102. The display unit 102 is also flexible. A method for manufacturing the flexible display portion 102 will be described later.

[0097] Next, as shown in FIGS. 16(A-2) and 16(B-2), the housing 12 is The display unit 102 is provided so as to be wrapped around the outside of the housing 126. An adhesive layer may be provided between the display unit 102 and the housing 126, and the display unit 102 may be attached to the outside of the housing 126. By providing the display unit 102 so as to be in contact with the outside of the housing 126 having the side Therefore, the display unit 102 can be formed with a curved surface.

[0098] Next, the display unit 102 provided on the outside of the housing 126 is placed on the support 125 having a curved surface. Here, for example, an adhesive layer is provided between the display unit 102 and the support 125, and the display unit 1 The support 125 may be bonded to the substrate 02.

[0099] By the steps described above, the electronic device 100 shown in FIGS. 1 to 15 can be manufactured. .

[0100] In addition, in the case where the electronic device 100 shown in FIG. 15A is provided with the display unit 102, 17A is a top view of the display unit 102. 02 preferably has a display area 151 and a display area 152. When providing the display area 152, a housing 126 having curved sides is prepared. The display unit 102 may be deformed to fit the surface. As shown in FIG. 17(B), a gap 135 may be provided in the area where the display area 152 is provided. By providing the slit 135, it may be possible to prevent wrinkles from occurring in the display area 152. Yes, and it is preferable.

[0101] Next, an example of how the electronic device 100 is worn will be shown. FIG. 18(A) shows an example of how the electronic device 100 is worn on the upper part of the arm. 18(B) shows an example of the electronic device 100 being a wristband-type device. show.

[0102] The screen size when the electronic device 100 is provided with the display unit 102 will be described. For example, When wearing the watch on the wrist, the circumference of an adult's wrist is 18cm ±5cm, so the screen size The maximum recommended size is 23cm of arm circumference x distance from wrist to elbow. The distance to the elbow is less than 1 foot (30.48 cm), e.g., a cylindrical support 125 The maximum screen size of the display unit of the wrist-worn electronic device 100 is 23 cm x 30.48 cm. The screen size mentioned here does not refer to the size when the screen has a curved surface. It also refers to the size of a flat screen when multiple displays are installed on one electronic device. For example, the electronic device may have a second display unit that is smaller than the first display unit. The dimensions of the support 125 are larger than the screen size of the display unit. In this case, if the screen size can be placed on the support structure, the display unit 102 and the circuit The total weight of the substrate 106 can be 1 g or more and less than 10 g.

[0103] The thinnest part of the electronic device 100 provided with the display unit 102 is 5 mm or less. The thickest part of the electronic device 100 is the area between the display unit 102 and the circuit board 106. The connection part with the wire can be less than 1 cm.

[0104] Additionally, the total weight of the electronic device 100 can be less than 100 g.

[0105] [Display panel configuration example] Next, a configuration example of the display panel included in the display unit 102 will be described with reference to the drawings.

[0106] FIG. 19(A) is a schematic top view of a display panel 110 exemplified below. 10 includes a flexible substrate 120 and a plurality of pixels formed on the substrate 120. The display panel 110 has a first display area 111, a second display area 112, and a third display area 113 and a fourth display area 114. For clarity, each display area The display areas 111 to 114 are clearly shown by using different hatching patterns. , are provided continuously on the substrate 120. In the display areas 111 to 114, two A continuous image may be displayed across the above display areas.

[0107] The first display area 111 has a quadrilateral shape. The second display area 112 has a , which is set in contact with one of the four sides (first side 131) that form the outline of the first display area 111. The first side 13 of each of the first display area 111 and the second display area 112 is The widths of the third display area 113 in the direction parallel to the top and bottom edges of the display area 112 are preferably the same. The first display area 11 is provided adjacent to a second side 132 that is adjacent to the first side 131. It is preferable that the widths of the first and third display areas 113 in the direction parallel to the second side 132 are the same. In addition, a second display area is provided at the angle (first angle) formed by the first side 131 and the second side 132. One of the corners of the first display area 112 and one of the corners of the third display area 113 are aligned with each other. It is preferable.

[0108] As shown in FIG. 19A, the first side 131 and the second side 132 define a first boundary. In a region facing the first display region 111 across the corner, a notch 138 is formed in the substrate 120. By providing the notch 138 in this way, the second display area 112 and The third display area 113 can be curved in different directions.

[0109] 19(A), a fourth side 133 is in contact with the third side 133 opposite to the first side 131. The fourth display area 114 is provided at one corner thereof. It is preferable that the second angle formed by the first side 132 and the third side 133 coincides with the second angle. In the area facing the first display area 111 across the substrate 120, the notch 1 is formed. 38. With this configuration, the fourth display area 114 It can be curved in a different direction from the third display area 113.

[0110] In addition, a part of the substrate 120 is provided with an FPC 10 for supplying signals and power for driving the pixels. 19(A) shows an IC 10 mounted on an FPC 103 by the COF method. However, if IC 104 is not required, it may be omitted. Alternatively, the IC 104 may be mounted directly on the FP 20 using the COF method. It is preferable that the width of the second display area C103 is smaller than the width of the first display area 111. The first display area 111 is made flat, and the second display area 112 and the fourth display area 114 are made curved. When the FPC 103 is used as a substrate, the joint between the FPC 103 and the substrate 120 does not bend, and the FPC This can prevent the film 103 from peeling off.

[0111] FIG. 19(B) is an enlarged schematic top view of region A in FIG. 19(A).

[0112] In the configuration shown in FIG. 19(B), the first display area 111 and the second display area 112 are a first drive circuit 141 that outputs signals for driving the pixels included therein; A second drive circuit 142 outputs a similar signal to the third display area 113. The first driving circuit 141 is provided along the side of the second display area 112 opposite to the first side 131. The second driving circuit 142 is disposed on the first side 131 of the third display area 113. The first driving circuit 141 and the second driving circuit 142 is electrically connected by wiring 145, and input from FPC 103 is received through wiring 145. The input signal can be provided to a second driver circuit 142 .

[0113] Also, FIG. 19(C) shows a configuration different from that shown in FIG. 19(B). In the configuration shown in FIG. 9(C), a drive circuit 143 is provided in place of the first drive circuit 141. The driving circuit 143 drives the pixels included in the first display area 111 and the second display area 112. The third display area 113 is driven by a signal to drive the pixels included in the third display area 113. The signal output from the driving circuit 143 is transmitted through the wiring 14 6, and outputs the signals to wirings electrically connected to the pixels in the third display area 113. It is possible.

[0114] The first drive circuit 141, the second drive circuit 142, and the drive circuit 143 are, for example, gate A circuit that functions as either a driver circuit or a source driver circuit can be used. In this case, IC104 is used as a source driver circuit. It is preferable that the function be as follows.

[0115] In this example, a so-called driver-integrated display panel is provided with a driving circuit on the substrate 120. However, a configuration without a drive circuit may also be used.

[0116] In this way, the third display area 113 outputs signals for driving the pixels included in the third display area 113. The second driver circuit 142 or the wiring 146 that supplies a signal for driving the pixel is connected to the first driver circuit 142. By providing the notch 138 along one side of the display area 113, the area of ​​the notch 138 can be increased. This makes it possible to reduce the area of ​​the non-display section relative to the surface area of ​​the display panel 110. In addition, when the third display area 113 is curved in a direction parallel to the second side 132, as shown in FIG. As shown in 19(C), it is preferable to have a configuration in which no drive circuit is provided in the bending section. As a result, the electrical characteristics of semiconductor elements such as transistors in the drive circuit change due to the stress. This configuration may cause the output signal from the driver circuit to become unstable. This can prevent the system from becoming fixed.

[0117] Although FIG. 19 shows a configuration having first to fourth display areas, It may be configured to have three display areas, or may be configured to have a fifth display area 115. FIG. 20A shows a schematic top view of the fifth display area 115. The wiring and drive circuit configuration between the fifth display area 115 and the second display area 112 is as follows. 19(B) or 19(C) may be used.

[0118] Also, Fig. 20(B) shows an example of a configuration in which an FPC 103a is provided. has a function of supplying signals and power to each of the driving circuits exemplified above. If the panel 110 does not have a driving circuit, an IC is mounted on the FPC 103a by a COF method or the like. It may also be worn.

[0119] Here, the pixels included in each display area provided on the display panel 110 and the It is preferable to use an oxide semiconductor for a semiconductor device such as a transistor. It is preferable to use an oxide semiconductor having a larger band gap than silicon. If a semiconductor material with a wider band gap and lower carrier density than that of a capacitor is used, This is preferable because it can reduce the current when the transistor is in the off state.

[0120] For example, the oxide semiconductor may contain at least indium (In) or It is preferable that zinc (Zn) is contained. More preferably, it is an In-M-Zn-based oxide (wherein M is A). (metals such as l, Ti, Ga, Ge, Y, Zr, Sn, La, Ce or Hf) Contains oxides.

[0121] In particular, the semiconductor layer has a plurality of crystal portions, and the c-axes of the crystal portions are aligned with the surface on which the semiconductor layer is formed. or oriented perpendicular to the upper surface of the semiconductor layer and having no grain boundary between adjacent crystal portions. An oxide semiconductor film is preferably used.

[0122] Such oxide semiconductors have no crystal grain boundaries, so when the display panel is bent, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in flexible display panels that are used in a curved state. You can be there.

[0123] By using such materials for the semiconductor layer, fluctuations in electrical characteristics are suppressed, and reliability is improved. High-performance transistors can be realized.

[0124] In addition, due to its low off-state current, the charge stored in the capacitance can be released for a long period of time via the transistor. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of the image displayed in the display area. As a result, electronic equipment with extremely reduced power consumption can be realized.

[0125] The preferred oxide semiconductors applicable to the semiconductor layer and their forming methods are as follows: This will be explained in detail in a later embodiment.

[0126] In addition to the display device, the electronic device according to one embodiment of the present invention may also include other semiconductor circuits, such as an overcharge It also includes a control circuit to prevent this, as well as sensors such as an image sensor, gyro sensor, and acceleration sensor. It may also be equipped with a sensor, a touch panel, etc. It may also be used to measure pulse and surface temperature by touching a part of the human body. It may also be equipped with sensors for measuring blood pressure, blood oxygen concentration, etc. By incorporating an image sensor in the camera, the captured image can be displayed on a display device. By incorporating sensors such as gyro sensors and acceleration sensors, it is possible to It can save power by switching between on and off states depending on the orientation and movement. By installing a touch panel, the electronic device can be operated by touching a desired position on the touch panel. In addition to the display device, the above-described configuration can also include a By installing memory and a CPU, it is also possible to create a wearable computer.

[0127] Furthermore, the electronic device of one embodiment of the present invention can be used as a display unit of a wrist-worn electronic device, and the display unit can be used as a display unit of a conventional mobile phone. By using both the display portion of an information terminal and the electronic device of one embodiment of the present invention as a sub-display, It can also function as a

[0128] This embodiment mode can be freely combined with other embodiment modes.

[0129] (Embodiment 2) In this embodiment, a specific example of a display panel included in an electronic device of one embodiment of the present invention will be described. Reveal.

[0130] [Example 1] FIG. 21A shows a plan view of the display panel, and the dashed line A1-A2 in FIG. An example of a cross-sectional view between the color filters is shown in FIG. In this embodiment, the display panel is a top emission type display panel. For example, a panel has a structure in which one color is expressed using three sub-pixels of R (red), G (green), and B (blue). Composition: R (red), G (green), B (blue), W (white), or R (red), G (green), B (blue) A configuration in which one color is expressed by four sub-pixels of Y (yellow), Y (yellow), and Y (yellow) can be applied. However, colors other than RGBW may be used, for example, yellow, cyan, magenta, etc. It may be configured as such.

[0131] The display panel shown in FIG. 21(A) includes a light-emitting section 804, a driving circuit section 806, an FPC (Flexible Printed Circuit) The light emitting unit 804 and the driving circuit The light emitting element and the transistor included in the circuit portion 806 are formed on the substrate 801, the substrate 803, and the sealing layer It is sealed by 823.

[0132] The display panel shown in FIG. 21(C) includes a substrate 801, an adhesive layer 811, an insulating layer 813, and a plurality of A transistor, a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 8 21, sealing layer 823, overcoat 849, coloring layer 845, light-shielding layer 847, insulating layer 84 3, adhesive layer 841, and substrate 803. The sealing layer 823, overcoat 849, and insulating layer The edge layer 843, adhesive layer 841, and substrate 803 are transparent to visible light.

[0133] The light emitting section 804 is a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. The light emitting element 830 includes a lower electrode 83 on an insulating layer 817. 1, an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. The end of the lower electrode 831 is covered with an insulating layer 821. Preferably, the upper electrode 835 is transparent to visible light.

[0134] The light-emitting section 804 includes a colored layer 845 overlapping the light-emitting element 830 and a layer overlapping the insulating layer 821. The colored layer 845 and the light-shielding layer 847 are covered with an overcoat 849. The space between the light emitting element 830 and the overcoat 849 is filled with a sealing layer 823. There are.

[0135] The insulating layer 815 has the effect of suppressing the diffusion of impurities into the semiconductor that constitutes the transistor. The insulating layer 817 also has a planarizing function to reduce surface irregularities caused by the transistor. It is preferable to select an insulating layer having

[0136] The driving circuit section 806 is formed by forming a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. In FIG. 21C, the driver circuit portion 806 includes a plurality of transistors. One transistor is shown.

[0137] The insulating layer 813 and the substrate 801 are bonded together by an adhesive layer 811. The insulating layer 813 and the insulating layer 803 are bonded to each other by the adhesive layer 841. If a film with low water permeability is used for 843, impurities such as water may get into the light emitting element 830 or the transistor 820. This is preferable because it can prevent objects from entering and improve the reliability of the display panel.

[0138] The conductive layer 857 transmits signals (video signals, clock signals, switch signals, etc.) from the outside to the driving circuit section 806. It is electrically connected to an external input terminal that transmits a signal (such as a start signal or a reset signal) or a potential. Here, an example is shown in which an FPC808 is provided as an external input terminal. To prevent this, the conductive layer 857 is made of the same material as the electrodes and wiring used in the light emitting section and the drive circuit section. Here, the conductive layer 857 is preferably formed by a process. This shows an example in which the electrode is made of the same material and in the same process as the electrode to be used.

[0139] In the display panel shown in FIG. 21C, the connector 825 is located on the substrate 803. 825 includes the substrate 803, the adhesive layer 841, the insulating layer 843, the sealing layer 823, the insulating layer 817, and The connecting body 8 is connected to the conductive layer 857 through an opening provided in the insulating layer 815. 25 is connected to the FPC 808. The FPC 808 and the conductive layer 857 are connected to each other via the connector 825. When the conductive layer 857 and the substrate 803 overlap, the substrate 803 is opened. By using a substrate with an opening, the conductive layer 857, the connector 825, and the F The PC 808 can be electrically connected.

[0140] In Example 1, the insulating layer 813, the transistor 820, and the light-emitting element 820 are formed on a highly heat-resistant substrate. The substrate 830 is then peeled off, and an insulating layer 8 is formed on the substrate 801 using an adhesive layer 811. 13, a transistor 820, and a light-emitting element 830 are transposed to form a display panel. In addition, in Example 1, the insulating layer 843 and the colored layer 845 are formed on a highly heat-resistant substrate. and a light-shielding layer 847 is formed, the substrate on which the layer is formed is peeled off, and the layer is formed on the substrate 803 using the adhesive layer 841. A display panel can be produced by transposing an insulating layer 843, a coloring layer 845, and a light-shielding layer 847. It shows.

[0141] If a substrate is made of a material with low heat resistance (such as resin), the substrate is exposed to high temperatures during the manufacturing process. Since it is difficult to form a thin film on the substrate, there are limitations on the conditions for forming transistors and insulating layers on the substrate. When using a highly permeable material (such as resin) for the substrate, high temperatures are applied to form a low-permeability film. In the manufacturing method of this embodiment, it is preferable to form a transistor on a manufacturing substrate having high heat resistance. High temperature can be used to produce highly reliable transistors and transistors with sufficient water permeability. Then, they can be transferred to the substrate 801 or the substrate 803. Thus, in one embodiment of the present invention, a highly reliable display panel can be manufactured. A lightweight, thin, and highly reliable display panel can be realized. The manufacturing method will be described in detail later. do.

[0142] [Example 2] FIG. 21B shows a plan view of the display panel, and the dashed line A3-A4 in FIG. An example of a cross-sectional view of the gap is shown in FIG. 21(D). The display panel shown in Example 2 is different from Example 1 in that This is a top-emission type display panel that uses a color filter system. Only the differences from Example 1 will be described in detail, and explanations of the points in common with Example 1 will be omitted.

[0143] The display panel shown in FIG. 21(D) differs from the display panel shown in FIG. 21(C) in the following respects: .

[0144] The display panel shown in FIG. 21(D) has spacers 827 over the insulating layer 821. By providing the spacer 827, the distance between the substrate 801 and the substrate 803 can be adjusted.

[0145] In addition, in the display panel shown in FIG. 21(D), the substrate 801 and the substrate 803 are different in size. The connecting body 825 is located on the insulating layer 843 and does not overlap the substrate 803. through openings provided in the edge layer 843, the sealing layer 823, the insulating layer 817, and the insulating layer 815. The conductive layer 857 is connected to the substrate 803. Since there is no need to provide an opening in the substrate 803, the conductive layer 857 is connected to the conductive layer 857. There are no restrictions on materials.

[0146] [Example 3] FIG. 22(A) shows a plan view of the display panel, and the dashed line A5-A6 in FIG. An example of a cross-sectional view between the two is shown in FIG. 22(C). The display panel shown in Example 3 uses a color-coded method. The display panel used is a top-emission type.

[0147] The display panel shown in FIG. 22(A) includes a light-emitting section 804, a driving circuit section 806, and an FPC 808. The light emitting element and the transistor included in the light emitting section 804 and the driving circuit section 806 are mounted on the substrate 8 01, and is sealed by a substrate 803, a frame-shaped sealing layer 824, and a sealing layer 823.

[0148] The display panel shown in FIG. 22(C) includes a substrate 801, an adhesive layer 811, an insulating layer 813, and a plurality of A transistor, a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 8 21, a sealing layer 823, a frame-shaped sealing layer 824, and a substrate 803. The substrate 803 is transparent to visible light.

[0149] The frame-shaped sealing layer 824 is preferably a layer having higher gas barrier properties than the sealing layer 823. This prevents moisture and oxygen from entering the display panel from the outside. This makes it possible to realize a highly reliable display panel.

[0150] In Example 3, light emitted from the light emitting element 830 is extracted from the display panel through the sealing layer 823. Therefore, it is preferable that the sealing layer 823 has higher light-transmitting properties than the frame-shaped sealing layer 824. Furthermore, it is preferable that the refractive index of the sealing layer 823 is higher than that of the frame-shaped sealing layer 824. Furthermore, the sealing layer 823 has a smaller shrinkage in volume when hardened than the frame-shaped sealing layer 824. It is preferable that:

[0151] The light emitting section 804 is a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. The light emitting element 830 includes a lower electrode 83 on an insulating layer 817. 1, an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. The end of the lower electrode 831 is covered with an insulating layer 821. Preferably, the upper electrode 835 is transparent to visible light.

[0152] The driving circuit section 806 is formed by forming a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. In FIG. 22C, the driver circuit portion 806 includes a plurality of transistors. One transistor is shown.

[0153] The insulating layer 813 and the substrate 801 are bonded together by an adhesive layer 811. If a film with low water permeability is used, impurities such as water may penetrate into the light emitting element 830 and the transistor 820. This is preferable because it can suppress the penetration of light and improve the reliability of the display panel.

[0154] The conductive layer 857 serves as an external input terminal for transmitting signals and potentials from the outside to the driving circuit portion 806. Electrically connect. Here, an example is shown where an FPC808 is used as the external input terminal. Here, the conductive layer 857 is made of the same material as the electrode of the transistor 820. An example produced using the same process is shown below.

[0155] In the display panel shown in FIG. 22C, the connector 825 is located on the substrate 803. 825 is a substrate 803, a sealing layer 823, an insulating layer 817, and an opening provided in the insulating layer 815. The connector 825 is connected to the conductive layer 857 through a hole. The FPC 808 and the conductive layer 857 are electrically connected via the connector 825.

[0156] In Example 3, the insulating layer 813, the transistor 820, and the light-emitting element 820 are formed on a substrate having high heat resistance. The substrate 830 is then peeled off, and an insulating layer 8 is formed on the substrate 801 using an adhesive layer 811. 13, a transistor 820, and a light-emitting element 830 are transposed to form a display panel. Since transistors and other devices can be manufactured on a highly heat-resistant substrate, This allows for the formation of highly reliable transistors and films with sufficiently low water permeability. By transferring them to the substrate 801, a highly reliable display panel can be manufactured. Therefore, in one embodiment of the present invention, a lightweight or thin and highly reliable display panel can be realized. Cut.

[0157] [Example 4] FIG. 22B shows a plan view of the display panel, and the dashed line A7-A8 in FIG. An example of a cross-sectional view between the color filters is shown in FIG. This is a bottom-emission display panel that uses the method.

[0158] The display panel shown in FIG. 22(D) includes a substrate 801, an adhesive layer 811, an insulating layer 813, and a plurality of Transistor, conductive layer 857, insulating layer 815, colored layer 845, insulating layer 817a, insulating layer 8 17b, a conductive layer 816, a plurality of light-emitting elements, an insulating layer 821, a sealing layer 823, and a substrate 803 The substrate 801, the adhesive layer 811, the insulating layer 813, the insulating layer 815, the insulating layer 817a, The insulating layer 817b transmits visible light.

[0159] The light emitting section 804 is a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. The light-emitting element 830 includes an insulating layer A lower electrode 831 on 817b, an EL layer 833 on the lower electrode 831, and a The lower electrode 831 is the source electrode of the transistor 820. The end of the lower electrode 831 is covered with an insulating layer 821. The upper electrode 835 preferably reflects visible light. The lower electrode 831 transmits visible light. The position where the colored layer 845 overlapping the light emitting element 830 is provided is not particularly limited. For example, The insulating layer 817a and the insulating layer 817b, the insulating layer 815 and the insulating layer 817a, etc. That's fine.

[0160] The driving circuit section 806 is formed by forming a transistor on the substrate 801 via an adhesive layer 811 and an insulating layer 813. In FIG. 22D, the driver circuit portion 806 includes a plurality of transistors. Two transistors are shown.

[0161] The insulating layer 813 and the substrate 801 are bonded together by an adhesive layer 811. If a film with low water permeability is used, impurities such as water can easily penetrate the light emitting element 830 and the transistors 820 and 822. This is preferable because it can prevent impurities from entering and improve the reliability of the display panel.

[0162] The conductive layer 857 serves as an external input terminal for transmitting signals and potentials from the outside to the driving circuit portion 806. Electrically connect. Here, an example is shown where an FPC808 is used as the external input terminal. Here, the conductive layer 857 is formed using the same material and in the same process as the conductive layer 816. Here is an example.

[0163] In Example 4, the insulating layer 813, the transistor 820, and the light-emitting element 820 are formed on a substrate having high heat resistance. The substrate is peeled off, and an insulating layer is formed on the substrate 801 using the adhesive layer 811. A display panel that can be manufactured by transposing 813, a transistor 820, a light-emitting element 830, etc. Since transistors and other devices can be manufactured on a highly heat-resistant substrate, This allows for the formation of highly reliable transistors and films with sufficiently low water permeability. By transferring these to the substrate 801, a highly reliable display panel can be manufactured. As a result, in one aspect of the present invention, a lightweight or thin and highly reliable display panel can be realized. It can be realized.

[0164] [Example 5] FIG. 22(E) shows an example of a display panel different from the specific examples 1 to 4.

[0165] The display panel shown in FIG. 22(E) comprises a substrate 801, an adhesive layer 811, an insulating layer 813, a conductive layer 814, conductive layer 857a, conductive layer 857b, light-emitting element 830, insulating layer 821, sealing layer 82 3, and a substrate 803.

[0166] The conductive layers 857a and 857b function as external connection electrodes of the display panel. , and can be electrically connected to FPC, etc.

[0167] The light emitting element 830 has a lower electrode 831, an EL layer 833, and an upper electrode 835. The end of the bottom electrode 831 is covered with an insulating layer 821. The light emitting element 830 is a bottom emitting element. The light extraction side is either a top-emission type or a dual-emission type. The electrode, the substrate, the insulating layer, etc. are transparent to visible light. and electrically connect it.

[0168] The substrate on the light extraction side has a hemispherical lens and a microlens array as a light extraction structure. For example, the resin substrate may have a film with a concave-convex structure, a light-diffusing film, or the like. The lens or film is placed on a plate with a refractive index similar to that of the substrate or the lens or film. By bonding the substrate using an adhesive having the above-mentioned properties, a light extraction structure can be formed.

[0169] The conductive layer 814 is not necessarily provided, but it is possible to reduce the voltage drop due to the resistance of the lower electrode 831. For the same purpose, the upper electrode 835 and the electrode A conductive layer for electrical connection is formed on the insulating layer 821, the EL layer 833, the upper electrode 835, or the like. It may be provided.

[0170] The conductive layer 814 may be made of copper, titanium, tantalum, tungsten, molybdenum, chromium, or neodymium. Materials selected from the group consisting of aluminum, scandium, nickel, and aluminum, or materials containing these as their main components The conductive layer 814 can be formed as a single layer or a stacked layer using an alloy material or the like. For example, it can be 0.1 μm or more and 3 μm or less, and preferably 0.1 μm or more and 0.1 μm or less. It is less than 0.5μm.

[0171] A paste (such as silver paste) is used as the material for the conductive layer electrically connected to the upper electrode 835. When the conductive layer is heated, the metal constituting the conductive layer becomes granular and aggregates. This results in a structure with many gaps, making it difficult for the EL layer 833 to completely cover the conductive layer, and This is preferable because it becomes easier to electrically connect the conductive layer to the conductive layer.

[0172] In Example 5, the insulating layer 813, the light emitting element 830, etc. are fabricated on a highly heat-resistant fabrication substrate. The substrate is peeled off, and an insulating layer 813 and a light emitting element 83 are formed on the substrate 801 using an adhesive layer 811. This shows a display panel that can be manufactured by transposing 0 etc. on a highly heat-resistant manufacturing substrate. By applying high temperature to form a film with sufficiently low water permeability and transferring it to the substrate 801, reliability is improved. Therefore, in one embodiment of the present invention, a display panel that is lightweight or thin can be manufactured. Moreover, a highly reliable display panel can be realized.

[0173] Although an example in which a light-emitting element is used as a display element has been shown here, The embodiment is not limited to this.

[0174] For example, in this specification, a display element, a display device which is a device having a display element, a light-emitting device, A light-emitting device, which is a device having an element and a light-emitting element, can be used in various forms or in various The display element, the display device, the light-emitting element or the light-emitting device can have, for example, EL (electroluminescence) elements (EL elements containing organic and inorganic materials, organic EL elements) LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.) , transistors (transistors that emit light according to current), electron-emitting devices, liquid crystal devices, electrons Ink, electrophoretic element, grating light valve (GLV), plasma display (PDP), display element using MEMS (microelectromechanical systems) Digital Micromirror Device (DMD), DMS (Digital MicroShutter) MIRASOL (registered trademark), IMOD (Interference Modulation shutter-type MEMS display elements, optical interference-type MEMS display elements, Using electrowetting elements, piezoelectric ceramic displays, and carbon nanotubes In addition to these, it has at least one electrical or magnetic function. Even if the display medium has a variable contrast, brightness, reflectance, transmittance, etc. depending on the use, An example of a display device using an EL element is an EL display. An example of a display device using an emission element is a field emission display (FED) ) or SED type flat panel display (SED: Surface-conduction Electron-emitter Displays (ELDs) are also available. An example of a display device is a liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display, etc.). LCD, reflective LCD, direct-view LCD, projection LCD Display using electronic ink, electronic liquid powder (registered trademark), or electrophoretic element An example of such a device is electronic paper. In order to realize a liquid crystal display, a part or all of the pixel electrodes are used as reflective electrodes. For example, a part or all of the pixel electrodes may be made of aluminum. In this case, the reflective electrode may have a thickness of 100 μm or 100 μm. It is also possible to provide a memory circuit such as RAM, which further reduces power consumption. When using an LED, a glass substrate is placed under the LED electrode and nitride semiconductor. Graphene or graphite may be arranged in layers. In this way, by providing graphene or graphite, On top of this, nitride semiconductors, such as n-type GaN semiconductor layers having crystallinity, can be easily formed. Furthermore, a p-type GaN semiconductor layer having crystals can be provided on the above, It is possible to construct an LED. Note that graphene and graphite are n-type crystalline An AlN layer may be provided between the GaN semiconductor layer. The layer may be deposited by MOCVD. However, the provision of graphene The GaN semiconductor layer can also be formed by sputtering.

[0175] [Example of materials] Next, materials that can be used for the light-emitting panel will be described. The explanation of the configuration may be omitted.

[0176] The substrate can be made of materials such as glass, quartz, organic resin, metal, and alloy. The substrate on the side from which light from the optical element is extracted is made of a material that is translucent to the light.

[0177] In particular, it is preferable to use a flexible substrate. For example, an organic resin or a flexible substrate may be used. Any thickness of glass, metal or alloy can be used.

[0178] Since organic resin has a smaller specific gravity than glass, when organic resin is used as a flexible substrate, This is preferable because it allows the light-emitting panel to be lighter than when glass is used.

[0179] It is preferable to use a highly tough material for the substrate. This makes it possible to achieve excellent impact resistance and breakage resistance. For example, it is possible to realize a light-emitting panel that is hard to damage. By using a metal or alloy substrate, it is lighter and less susceptible to breakage than when using a glass substrate. It is possible to create a light-emitting panel.

[0180] Metallic and alloy materials have high thermal conductivity and can easily conduct heat across the entire substrate, making it possible to This is preferable because it can suppress local temperature rises in the panel. The thickness of the substrate is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less. It is more preferable to do so.

[0181] The material for forming the metal substrate or alloy substrate is not particularly limited, but for example, aluminum Metals such as aluminum, copper, iron, titanium, nickel, etc., or one or more metals selected from these metals The alloy may be, for example, an aluminum alloy or a stainless steel alloy. For example, a stainless steel sheet can be preferably used.

[0182] In addition, if a material with high thermal emissivity is used for the substrate, the surface temperature of the light-emitting panel will increase. This can prevent damage to the light-emitting panel and a decrease in reliability. A stack of high emissivity layers (for example, metal oxides or ceramic materials can be used) It may also be constructed as such.

[0183] Examples of materials that are flexible and transparent include polyethylene terephthalate (PE T), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin Resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, Styrene resin, polyamide-imide resin, polyvinyl chloride resin, polytetrafluoroethylene In particular, it is preferable to use a material with a low thermal expansion coefficient. For example, polyamide-imide resin, polyimide resin, PET, etc. can be suitably used. In addition, there are substrates in which fibers are impregnated with resin (also called prepregs), and inorganic fillers are mixed with organic resins. It is also possible to use substrates that have been mixed with grease to reduce their thermal expansion coefficient.

[0184] As for the flexible substrate, the layer using the above material acts as a hard layer to protect the surface of the device from scratches. Coating layers (e.g., silicon nitride layers) and layers of materials that can disperse pressure (e.g., ara The insulating layer may be laminated with a polymer layer (e.g., a polymer layer).

[0185] The flexible substrate may be formed by stacking a plurality of layers. This means that the barrier properties against water and oxygen can be improved, resulting in a highly reliable light-emitting panel. can.

[0186] For example, a flexible substrate in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side closer to the light emitting element is used. The thickness of the glass layer is preferably 20 μm or more and 200 μm or less. The thickness is preferably 25 μm or more and 100 μm or less. A glass layer with such a thickness is highly resistant to water and oxygen. The thickness of the organic resin layer can be set to 1. The thickness is 0 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less. By placing the mechanical resin layer on the outside of the glass layer, breakage and cracks in the glass layer are suppressed. Such a composite material of glass material and organic resin can improve the mechanical strength. By applying it to the substrate, it becomes possible to create a highly reliable flexible light-emitting panel. can.

[0187] For adhesive and sealing layers, there are various types of adhesives, such as UV-curable adhesives, reactive-curable adhesives, and heat-curable adhesives. Various curing adhesives such as adhesives and anaerobic adhesives can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, Imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin Examples of the resin include EVA (ethylene vinyl acetate) resin. A material with low wettability is preferred. A two-component resin may also be used. etc. may also be used.

[0188] The resin may also contain a desiccant. For example, an oxide of an alkaline earth metal (an acid The material used is one that absorbs moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb water by physical adsorption. If a desiccant is included, impurities such as moisture can be absorbed into the functional element. This is preferable because it can suppress the intrusion of foreign matter and improve the reliability of the light-emitting panel.

[0189] Furthermore, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to For example, titanium oxide, barium oxide, Zeolite, zirconium, etc. can be used.

[0190] The structure of the transistors included in the light-emitting panel is not particularly limited. The transistor may be a top gate transistor or an inverted staggered transistor. The transistor may have either a top-gate or bottom-gate structure. The semiconductor material is not particularly limited, and examples thereof include silicon, germanium, silicon carbide, and nitride semiconductor. Indium, gallium, etc., such as In-Ga-Zn based metal oxides, Alternatively, an oxide semiconductor containing at least one of sodium and zinc may be used.

[0191] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0192] Here, transistors used in pixels, drive circuits, touch sensors, etc., which will be described later, It is preferable to use an oxide semiconductor for any semiconductor device. It is preferable to use an oxide semiconductor with a larger band gap than silicon. When a semiconductor material with a wide band and low carrier density is used, the off state of the transistor This is preferable because it can reduce the current in the

[0193] For example, the oxide semiconductor may contain at least indium (In) or It is preferable that zinc (Zn) is contained. More preferably, it is an In-M-Zn-based oxide (wherein M is A). (metals such as l, Ti, Ga, Ge, Y, Zr, Sn, La, Ce or Hf) Contains oxides.

[0194] In particular, the semiconductor layer has a plurality of crystal portions, and the c-axes of the crystal portions are aligned with the surface on which the semiconductor layer is formed. or oriented perpendicular to the upper surface of the semiconductor layer and having no grain boundary between adjacent crystal portions. An oxide semiconductor film is preferably used.

[0195] Such oxide semiconductors have no crystal grain boundaries, so when the display panel is bent, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in flexible display panels that are used in a curved state. You can be there.

[0196] By using such materials for the semiconductor layer, fluctuations in electrical characteristics are suppressed, and reliability is improved. High-performance transistors can be realized.

[0197] In addition, due to its low off-state current, the charge stored in the capacitance can be released for a long period of time via the transistor. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of the image displayed in the display area. As a result, electronic equipment with extremely reduced power consumption can be realized.

[0198] For stabilizing the characteristics of the transistor, it is preferable to provide an underlayer film. , silicon oxide film, silicon nitride film, silicon oxynitride film, silicon nitride oxide film, etc. The base film can be formed by a single layer or a multilayer structure using an organic insulating film. , CVD (Chemical Vapor Deposition) method (Plasma CVD method, thermal CVD method, MOCVD (Metal Organic CVD) method, etc.), ALD (Atomic Layer Deposition), coating, printing, etc. In addition, the undercoat film may not be provided if it is not necessary. The layer 813 can also serve as an underlying film for the transistor.

[0199] The light emitting element can be a self-luminous element, which can be illuminated by current or voltage. The category includes devices whose light intensity is controlled, such as light-emitting diodes (LEDs), organic An EL element, an inorganic EL element, etc. can be used.

[0200] Light-emitting elements are available in top-emission, bottom-emission, and dual-emission types. The electrode on the light extraction side uses a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. stomach.

[0201] The conductive film that transmits visible light is made of, for example, indium oxide or indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide, Gallium-doped It can be formed using zinc oxide containing gold, silver, platinum, magnesium, etc. , nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, if Metallic materials such as titanium, alloys containing these metallic materials, or nitrides of these metallic materials (e.g. For example, titanium nitride can be used by forming it thin enough to have light transmission properties. Also, a laminated film of the above materials can be used as the conductive layer. For example, a laminated film of silver and magnesium It is preferable to use a laminated film of an alloy of ITO and a rubber material, as this can increase the electrical conductivity. Graphene or the like may also be used.

[0202] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, or the like. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, or In addition, the above metal materials and alloys may contain lanthanum. Tungsten, neodymium, germanium, etc. may be added. Aluminum alloys such as tungsten alloys, aluminum-nickel alloys, and aluminum-neodymium alloys Alloys containing palladium (aluminum alloys), silver and copper alloys, silver, palladium and copper alloys, It can be formed using an alloy containing silver, such as an alloy of silver and magnesium. The alloy is preferable because of its high heat resistance. By laminating the metal oxide film, oxidation of the aluminum alloy film can be suppressed. Examples of materials for the metal film and metal oxide film include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated. For example, silver and ITO A laminated film of an alloy of silver and magnesium and ITO can be used.

[0203] The electrodes may be formed by vapor deposition or sputtering. Forming using ejection methods such as ink jet printing, printing methods such as screen printing, or plating methods It can be achieved.

[0204] A voltage higher than the threshold voltage of the light-emitting element is applied between the lower electrode 831 and the upper electrode 835. When this occurs, holes are injected into the EL layer 833 from the anode side, and electrons are injected from the cathode side. The electrons and holes are recombined in the EL layer 833, and the light-emitting material contained in the EL layer 833 emits light. It glows.

[0205] The EL layer 833 has at least a light-emitting layer. The EL layer 833 includes the following layers other than the light-emitting layer: Materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, materials with high electron transport properties Highly electron-injecting or bipolar material (highly electron-transporting and hole-transporting properties) The layer may further include a layer containing a material.

[0206] The EL layer 833 can be made of either a low molecular weight compound or a high molecular weight compound. The layers constituting the EL layer 833 may be formed by evaporation (vacuum evaporation). It can be formed by methods such as transfer method, printing method, ink jet method, coating method, etc. Cut.

[0207] When a white light emitting element is used as the light emitting element 830, two types of It is preferable that the light emitting element contains two or more luminescent materials. White light can be obtained by selecting luminescent materials so that the light is complementary in color. For example, they emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. or luminescent materials that emit light containing spectral components of two or more of the colors R, G, and B. It is preferable that the light emitting element 830 contains two or more of the above substances. The wavelength of the visible light range (e.g., 350 nm to 750 nm) has two or more peaks. It is preferable to use a light emitting element having a peak in the yellow wavelength region. The emission spectrum of the material has spectral components in the green and red wavelength regions. It is preferable.

[0208] More preferably, the EL layer 833 is a light-emitting layer containing a light-emitting material that emits light of one color and a light-emitting layer containing a light-emitting material that emits light of another color. It is preferable that the light-emitting layer has a laminated structure including a light-emitting layer containing a light-emitting material that emits light of E The plurality of light-emitting layers in the L layer 833 may be stacked in contact with each other or may be stacked with a separating layer interposed therebetween. For example, a structure in which a separation layer is provided between the fluorescent-emitting layer and the phosphorescent-emitting layer may be used. It may also be composed.

[0209] The separation layer is used to convert the excited state of a phosphorescent material generated in the phosphorescent-emitting layer into the fluorescent material in the fluorescent-emitting layer. Prevents energy transfer (especially triplet energy transfer) to optical materials via the Dexter mechanism The separation layer only needs to be a few nanometers thick. 1 nm to 20 nm, or 1 nm to 10 nm, or 1 nm to 5 nm The separating layer may be a single material (preferably a bipolar material) or a plurality of materials. (preferably a hole transporting material and an electron transporting material).

[0210] The separation layer may be formed using a material contained in the light-emitting layer that is in contact with the separation layer. This makes it easier to fabricate the light-emitting device and reduces the driving voltage. When the separation layer is made of a host material, an assist material, and a phosphorescent material (guest material), The separation layer may be formed of a host material and an assist material. The phosphorescent layer has a region that does not contain the material, and the phosphorescent layer has a region that contains the phosphorescent material. The separation layer and the phosphorescent layer can be deposited with or without a phosphorescent material. This configuration makes it possible to form the separation layer and the phosphorescent layer in the same chamber. This allows the manufacturing costs to be reduced.

[0211] The light emitting element 830 may be a single element having one EL layer, or may be a light emitting element having multiple EL layers. The device may be a tandem device in which an EL layer is stacked via a charge generating layer.

[0212] The light emitting element is preferably provided between a pair of insulating films with low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, thereby preventing a decrease in the reliability of the light emitting device. It can be controlled.

[0213] As insulating films with low water permeability, films containing nitrogen and silicon such as silicon nitride film and silicon nitride oxide film are used. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0214] For example, the water vapor permeation rate of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1 × 1 0 -7 [g / (m 2 ·day)] or less, more preferably 1 × 10 -8 [g / (m 2 ·d ay)] below.

[0215] It is preferable to use an insulating film with low water permeability for the insulating layer 813 and the insulating layer 843.

[0216] The insulating layer 815 may be, for example, a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. An inorganic insulating film such as an inorganic film can be used. The insulating layer 817b may be made of, for example, polyimide, acrylic, polyamide, or polyimide. Organic materials such as amide and benzocyclobutene resins can be used. Low dielectric constant materials (low-k materials) can be used. Each insulating layer may be formed by

[0217] The insulating layer 821 is formed using an organic insulating material or an inorganic insulating material. Examples of the resin include polyimide resin, polyamide resin, acrylic resin, siloxane resin, and epoxy resin. In particular, photosensitive resin materials can be used. It is preferable that the side wall of the opening is formed as an inclined surface having a continuous curvature. I wish.

[0218] The method for forming the insulating layer 821 is not particularly limited, but may be a photolithography method, a sputtering method, or the like. , evaporation method, droplet ejection method (inkjet method, etc.), printing method (screen printing, offset printing) It is best to use a printing press, etc.

[0219] The spacer 827 may be formed using an inorganic insulating material, an organic insulating material, a metal material, or the like. For example, inorganic insulating materials and organic insulating materials can be used for the insulating layer. Examples of metal materials that can be used include titanium and aluminum. The spacer 827 containing a conductive material and the upper electrode 835 are electrically connected to each other. This can suppress the potential drop caused by the resistance of the upper electrode 835. The shape of the 27 may be either a forward tapered shape or a reverse tapered shape.

[0220] For light-emitting panels that function as electrodes and wiring of transistors or auxiliary electrodes of light-emitting elements, The conductive layer used may be made of, for example, molybdenum, titanium, chromium, tantalum, tungsten, or aluminum. Metallic materials such as aluminum, copper, neodymium, scandium, etc., or alloy materials containing these elements The conductive layer can be formed as a single layer or a laminated layer using a conductive metal oxide. The conductive metal oxide may be indium oxide (In2O3, etc.). ), tin oxide (SnO2, etc.), zinc oxide (ZnO), ITO, indium zinc oxide (I ZnO, etc.) or these metal oxide materials containing silicon oxide. It is possible.

[0221] The colored layer is a colored layer that transmits light in a specific wavelength band. For example, A red (R) color filter transmits light in the green wavelength band, and a green (G) color filter transmits light in the green wavelength band. A blue (B) color filter that transmits light in the blue wavelength band can be used. Each color layer can be formed using various materials by printing, inkjet printing, photolithography, etc. They are formed at desired positions by etching using a graphic technique or the like.

[0222] The light-shielding layer is provided between adjacent colored layers. The light-shielding layer blocks light from the adjacent light-emitting element. The colored layer is formed on the edge of the light-shielding layer to prevent color mixing between adjacent light-emitting elements. By providing the light-shielding layer so that it overlaps the light-shielding layer, it is possible to suppress light leakage. Materials that block light emitted from the light-emitting element can be used, and include, for example, metal materials, pigments, and dyes. The black matrix may be formed using a resin material containing the light-shielding layer. If the light emitting element is provided in an area other than the light emitting part, unintended light leakage due to guided light can be suppressed. This is preferable.

[0223] In addition, an overcoat may be provided to cover the colored layer and the light-shielding layer. By doing so, it is possible to prevent impurities contained in the colored layer from diffusing into the light emitting element. The overcoat is made of a material that transmits light emitted from the light emitting element, such as silicon nitride. It uses inorganic insulating films such as silicon oxide films, and organic insulating films such as acrylic films and polyimide films. The insulating film may have a laminated structure of an organic insulating film and an inorganic insulating film.

[0224] In addition, when the material for the sealing layer is applied onto the colored layer and the light-shielding layer, the material for the overcoat is It is preferable to use a material that has high wettability with respect to the material of the sealing layer. As the substrate, oxide conductive films such as ITO films and metal films such as Ag films that are thin enough to be transparent are used. It is preferred to use a membrane.

[0225] The connector is a paste or sheet made of a thermosetting resin mixed with metal particles. For example, a material that exhibits anisotropic conductivity when thermocompressed can be used. For example, particles with layers of two or more metals, such as nickel particles coated with gold, are used. Alternatively, it is preferable to use a material in which the surface of granular resin is coated with metal. I wish.

[0226] This embodiment mode can be freely combined with other embodiment modes.

[0227] (Embodiment 3) In this embodiment, a structure of an oxide semiconductor that can be used in one embodiment of the present invention will be described. I will explain.

[0228] The structure of the oxide semiconductor film will be described below.

[0229] Oxide semiconductor films are classified into non-single-crystal oxide semiconductor films and single-crystal oxide semiconductor films. Alternatively, oxide semiconductors can be divided into, for example, crystalline oxide semiconductors and amorphous oxide semiconductors. can be.

[0230] As a non-single-crystal oxide semiconductor, CAAC-OS (C Axis Alignment d Crystalline Oxide Semiconductor), polycrystalline oxide There are various types of oxide semiconductors, such as amorphous oxide semiconductors, microcrystalline oxide semiconductors, and amorphous oxide semiconductors. Conductors include single-crystal oxide semiconductors, CAAC-OS, polycrystalline oxide semiconductors, and microcrystalline oxide semiconductors. semiconductors, etc.

[0231] First, the CAAC-OS film will be described.

[0232] The CAAC-OS film is one of the oxide semiconductor films that has multiple crystal parts aligned along the c-axis. .

[0233] Transmission Electron Microscope (TEM) A combined analysis image of the bright-field image and diffraction pattern of the CAAC-OS film was obtained using a microscope. (also called high-resolution TEM images) On the other hand, high-resolution TEM images also clearly show the boundaries between crystals, i.e., grain boundaries. Therefore, the CAAC-OS film is It can be said that the decrease in electron mobility caused by the grain boundaries is unlikely to occur.

[0234] When a high-resolution TEM image of the cross section of the CAAC-OS film was observed from a direction approximately parallel to the sample surface, It can be seen that the metal atoms are arranged in layers in the crystal part. The CAAC-OS film is formed on a surface (also called a surface on which the film is formed) or on the upper surface. The CAAC-OS film has a shape similar to that of the crystalline silicon film, and is arranged parallel to the surface on which the CAAC-OS film is formed or the upper surface thereof.

[0235] On the other hand, a high-resolution TEM image of the plane of the CAAC-OS film was observed from a direction almost perpendicular to the sample surface. They then confirmed that the metal atoms in the crystals were arranged in triangular or hexagonal shapes. However, there is no regularity in the arrangement of metal atoms between different crystal parts.

[0236] X-ray diffraction (XRD) of the CAAC-OS film When structural analysis is performed using this device, for example, CAAC-OS with InGaZnO4 crystals can be seen. In the out-of-plane analysis of the film, the diffraction angle (2θ) peaks around 31°. This peak is attributed to the (009) plane of the InGaZnO4 crystal. Therefore, the crystals of the CAAC-OS film have a c-axis orientation, and the c-axis faces the surface on which the film is formed or the upper surface. It can be seen that it is oriented in a substantially vertical direction.

[0237] In addition, the out-of-plane structure of the CAAC-OS film with InGaZnO4 crystals In the analysis by the NMR method, in addition to the peak at 2θ near 31°, a peak also appeared at 2θ near 36°. The peak at 2θ around 36° is due to the presence of c-axis orientation in part of the CAAC-OS film. The CAAC-OS film contains crystals that do not have crystalline structure. It is preferable that the peak is exhibited at 2θ of about 36° and that the peak is not exhibited at 2θ of about 36°.

[0238] The CAAC-OS film is an oxide semiconductor film with a low concentration of impurities. The oxide semiconductor film is made of an element other than the main component, such as silicon or a transition metal element. The elements such as ZnO, which have stronger bonding strength with oxygen than the metal elements constituting the oxide semiconductor film, By removing oxygen from the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film is disrupted, and the crystallinity is reduced. In addition, heavy metals such as iron and nickel, argon, and carbon dioxide are Because the diameter (or molecular radius) is large, when the molecule is contained inside the oxide semiconductor film, The impurities contained in the oxide semiconductor film are likely to disturb the atomic arrangement of the oxide semiconductor film, which may result in a decrease in crystallinity. The pure material may act as a carrier trap or a carrier generation source.

[0239] The CAAC-OS film is an oxide semiconductor film with a low density of defect states. Oxygen vacancies in semiconductor films can act as carrier traps and trap hydrogen. This can become a carrier generation source.

[0240] The low impurity concentration and low defect level density (low oxygen vacancies) are called high-purity intrinsic or The term "high-purity intrinsic" refers to a substantially high-purity intrinsic oxide semiconductor. The film has a small number of carrier generation sources, so the carrier density can be reduced. The transistor including the oxide semiconductor film has electrical characteristics in which the threshold voltage is negative. (also called normally-on) is rare. An oxide semiconductor film with intrinsic purity has few carrier traps. Transistors using conductor films have little fluctuation in electrical characteristics and are highly reliable. Note that it takes time for the charges trapped in the carrier traps in the oxide semiconductor film to be released. The time it takes for the impurity concentration to reach the target is long, and it may behave as if it were a fixed charge. A transistor using an oxide semiconductor film with a high density of defect states has unstable electrical characteristics. This may be the case.

[0241] In addition, the electrical characteristics of transistors using CAAC-OS films are improved by irradiation with visible light or ultraviolet light. There is little gender variation.

[0242] Next, a microcrystalline oxide semiconductor film will be described.

[0243] The microcrystalline oxide semiconductor film has crystalline parts that can be confirmed in high-resolution TEM images. The microcrystalline oxide semiconductor has a region where a crystal part is not clearly observed and a region where a crystal part is not clearly observed. The crystal parts contained in the film are large, with sizes of 1 nm to 100 nm or 1 nm to 10 nm. In particular, the size is between 1 nm and 10 nm, or between 1 nm and 3 nm. An oxide semiconductor film having nanocrystals (nc) is called an n c-OS(nanocrystalline oxide semiconductor ) film. In addition, the nc-OS film clearly shows the grain boundaries in high-resolution TEM images. It may not be possible to confirm.

[0244] The nc-OS film is a microscopic region (e.g., a region of 1 nm to 10 nm, especially a region of 1 nm or less). The nc-OS film has a periodic atomic arrangement in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystal parts, and therefore no orientation is observed throughout the film. Therefore, the nc-OS film cannot be distinguished from an amorphous oxide semiconductor film depending on the analysis method. For example, in the case of nc-OS films, X-rays with a diameter larger than that of the crystals are used. When structural analysis is performed using an RD device, the crystal In addition, the peaks indicating the crystal planes were not detected in the nc-OS film. Electron diffraction (also called selected area electron diffraction) using an electron beam with a diameter of 50 nm or more. When the diffraction pattern is changed to nc-OS film, a halo-like diffraction pattern is observed. Nano-beam electrons are used, which use an electron beam with a probe diameter close to or smaller than the size of the crystal. When nanobeam electron diffraction is performed on the nc-OS film, spots are observed. When you do this, you may see a circular (ring-shaped) area of ​​high brightness. Nanobeam electron diffraction of the nc-OS film revealed multiple spots within the ring-shaped region. may be observed.

[0245] The nc-OS film is an oxide semiconductor film with higher order than an amorphous oxide semiconductor film. Therefore, the nc-OS film has a lower density of defect states than the amorphous oxide semiconductor film. In the nc-OS film, there is no regularity in the crystal orientation between different crystal parts. The OS film has a higher density of defect states than the CAAC-OS film.

[0246] Next, the amorphous oxide semiconductor film will be described.

[0247] The amorphous oxide semiconductor film has an irregular atomic arrangement in the film and does not have a crystalline portion. An example is an oxide semiconductor film that has an amorphous state like quartz.

[0248] In amorphous oxide semiconductor films, no crystalline parts can be identified in high-resolution TEM images. .

[0249] When the structure of the amorphous oxide semiconductor film is analyzed using an XRD device, out-of- In the analysis by the plane method, no peaks indicating crystal planes are detected. When electron diffraction is performed on a semiconductor film, a halo pattern is observed. When nanobeam electron diffraction is performed on a semiconductor film, no spots are observed, and a halo pattern is observed. is observed.

[0250] Note that the oxide semiconductor film has a structure that exhibits physical properties intermediate between the nc-OS film and the amorphous oxide semiconductor film. An oxide semiconductor film having such a structure may be formed, particularly, by using an amorphous oxide. amorphous-like oxide semiconductors (a-like OS) This is called an iconductor membrane.

[0251] In the a-like OS film, voids are observed in high-resolution TEM images. In addition, crystals may not be clearly visible in high-resolution TEM images. The a-like OS film has regions where crystals are visible and regions where no crystals are visible. Crystallization occurs when a small amount of electrons is irradiated, similar to the amount observed with a TEM, and the growth of the crystals can be seen. On the other hand, if the nc-OS film is of good quality, the amount of precipitation is so small that it can be observed by TEM. Almost no crystallization due to electron irradiation is observed.

[0252] The size of the crystalline parts of the a-like OS film and the nc-OS film was measured using a high-resolution This can be done using TEM images. For example, InGaZnO4 crystals have a layered structure. There are two Ga-Zn-O layers between the In-O layers. The device has three In-O layers and six Ga-Zn-O layers, for a total of nine layers aligned along the c-axis. It has a layered structure. Therefore, the distance between adjacent layers is (009) The lattice spacing (also called the d value) is approximately the same as that of the Therefore, focusing on the lattice fringes in the high-resolution TEM image, In the area where the spacing is 0.28 nm or more and 0.30 nm or less, each lattice fringe is In It corresponds to the ab plane of the GaZnO4 crystal.

[0253] In addition, the density of an oxide semiconductor film may differ depending on the structure. If the composition of the conductive film is known, the density can be determined by comparing it with the density of a single crystal with the same composition. For example, the structure of the oxide semiconductor film can be estimated by using the following formula: The density of the -like OS film is 78.6% or more and less than 92.3%. The density of the nc-OS film and the CAAC-OS film is 92.3% or more of the density of the crystal. Note that an oxide semiconductor film having a density of less than 78% of the density of a single crystal is However, it is difficult to form the film.

[0254] The above will be explained using a specific example. For example, In:Ga:Zn=1:1:1 [atom In the oxide semiconductor film that satisfies the [atomic ratio], single-crystal InGaZnO with a rhombohedral crystal structure The density of 4 is 6.357 g / cm 3 Therefore, for example, In:Ga:Zn=1:1: In an oxide semiconductor film that satisfies the atomic ratio of 1, the density of the a-like OS film is 5.0 g / cm 3 More than 5.9g / cm 3 For example, In:Ga:Zn=1:1 In the oxide semiconductor film satisfying the atomic ratio of 0.1 to 1, the density and CAAC of the nc-OS film were The density of the -OS film is 5.9 g / cm 3 More than 6.3g / cm 3 It will be less than.

[0255] In some cases, single crystals with the same composition do not exist. In such cases, crystals with different compositions may be used in any proportion. By combining single crystals with the desired composition, the density corresponding to the single crystal of the desired composition can be calculated. The density of a single crystal of a desired composition varies depending on the ratio of the single crystals of different compositions combined. However, the density should be calculated using as few types of single crystals as possible. It is preferable to calculate it by combining the above.

[0256] The oxide semiconductor film may be, for example, an amorphous oxide semiconductor film, an a-like OS film, or a microcrystalline silicon film. The film may be a stacked film including two or more of a crystalline oxide semiconductor film and a CAAC-OS film. .

[0257] This embodiment mode can be freely combined with other embodiment modes.

[0258] (Fourth embodiment) In this embodiment, an example in which a power storage device is charged by wireless power feeding will be described. Electric fields, magnetic fields, electromagnetic waves, etc. can be used for wireless power supply.

[0259] The electronic device according to one embodiment of the present invention receives an electric field, a magnetic field, an electromagnetic wave, or the like from an antenna, a coil, or the like. In addition, the electronic device of one embodiment of the present invention preferably includes a capacitor for charging. It is preferable to have a sensor.

[0260] By using a coupling coil and a coupling capacitor, it is possible to charge the storage device without contact. In addition, the coupling coil can be changed to an antenna. Here, a secondary battery is used as the power storage device. The primary coil of the charger and the secondary coil of the electronic device are magnetically coupled to each other. The AC magnetic field generated by the primary coil generates a voltage in the secondary coil using electromagnetic induction. Charging is achieved by transmitting power to the secondary coil without contact. Since it is preferable to provide the coil in contact with the flexible film, the coil of the electronic device is also It is preferable to use a coil provided in an electronic device as an antenna. That's fine.

[0261] When an antenna is provided on the secondary battery of a wrist-worn electronic device with a display module, The device is not limited to charging a secondary battery by contact, but also has a memory and can transmit and receive electronic data. Or, by providing a GPS function, it can acquire location information and GPS time and display the location and clock. An antenna may be provided that can do this.

[0262] For safety reasons, the input / output terminals for charging or discharging the secondary battery are exposed, as they may come into contact with parts of the human body. If the input / output terminals are exposed, rain or other water may damage the input / output terminals. There is a risk of short-circuiting the components, or electric shock if the input / output terminals come into contact with the human body. If so, the input / output terminals can be configured not to be exposed on the surface of the electronic device.

[0263] Note that the present invention is the same as that of the first embodiment except that an antenna, a coil, and a wireless power supply converter are provided. Therefore, other detailed explanations will be omitted here.

[0264] According to the first embodiment, a power storage device, here a secondary battery, is fixed on the plate, and a display is placed on the secondary battery. The secondary battery preferably has a curved shape. The secondary battery is preferably flexible. The wireless power converter and antenna are also installed so that they overlap part of the display. Fix.

[0265] The wireless power supply converter and antenna weigh less than 10 g, and the total weight is almost the same as in the first embodiment. The weight can be kept almost the same.

[0266] FIG. 23 is a schematic diagram of an electronic device 400 having an antenna (not shown) and a charger 401. When the electronic device 400 is placed on the charger 401, power is supplied from the antenna of the charger 401. can be supplied to the electronic device 400 to charge the secondary battery of the electronic device 400.

[0267] In addition, information such as the remaining charge and the time remaining until full charge is displayed on the display of the electronic device 400. It is possible to display it.

[0268] This embodiment mode can be freely combined with other embodiment modes.

[0269] (Embodiment 5) In this embodiment, a flexible storage battery 10 that can be used in one embodiment of the present invention will be described. Let me explain 8.

[0270] In this embodiment, a flexible storage battery 108 is used with an exterior body made of a film. An example of using a thin secondary battery is shown in Fig. 24. The cross sections cut along the chain lines A1-A2 and B1-B2 in FIG. 24 are shown in FIGS. 25(A) and 25(B), respectively. and FIG. 25(B).

[0271] The thin secondary battery includes a sheet-shaped positive electrode 203, a sheet-shaped negative electrode 206, and a separator 207. 07, an electrolyte solution 208, an exterior body 209 made of a film, and a positive electrode lead electrode 510. The positive electrode 203 and the negative electrode 204 are disposed in the outer casing 209. A separator 207 is provided between the battery 201 and the battery 6. The exterior body 209 contains an electrolyte 208 The positive electrode 203 has a positive electrode current collector 201 and a positive electrode active material layer 202. The negative electrode 206 includes a negative electrode current collector 204 and a negative electrode active material layer 205 .

[0272] The materials for the positive electrode current collector 201 and the negative electrode current collector 204 are selected from those that undergo significant chemical changes in the electricity storage device. There are no particular limitations as long as the material exhibits high conductivity without causing oxidation. For example, gold, platinum, zinc Metals such as iron, nickel, copper, aluminum, titanium, tantalum, and their alloys (stainless steel, Stainless steel, etc.) and alloys of these metals with other metals can also be used. Elements that improve heat resistance, such as silicon, titanium, neodymium, scandium, and molybdenum It is also possible to use aluminum alloys containing silicon. It may be formed of a metal element that forms a silicide by reacting with silicon. The group elements are zirconium, titanium, hafnium, vanadium, niobium, tantalum, Examples include chromium, molybdenum, tungsten, cobalt, and nickel. Positive electrode current collector 201, The negative electrode current collector 204 may be in the form of a foil, a plate (sheet), a mesh, a cylinder, a coil, a punch, or the like. The positive electrode current collector 20 may have any shape, such as a shaped metal or an expanded metal. The thickness of the negative electrode current collector 201 and the negative electrode current collector 204 is preferably 5 μm or more and 30 μm or less.

[0273] The positive electrode active material layer 202 is made of a material that can insert and remove carrier ions. For example, an olivine-type crystal structure, a layered rock salt-type crystal structure, or a spin-type crystal structure can be used. There are lithium-containing materials with a crystalline structure of the crystalline structure of the crystalline structure of the crystalline structure of the lithium-containing materials. , such as alkali metals (e.g., lithium, sodium, potassium, etc.), alkaline earth metals metals (e.g., calcium, strontium, barium, etc.), beryllium, magnesium, etc. etc. can be used.

[0274] When lithium is used as a carrier ion, as the positive electrode active material, for example, LiFe O2, LiCoO2, LiNiO2, LiMn2O4, V2O5, Cr2O5, MnO2 and other compounds can be used.

[0275] Or a lithium-containing composite phosphate (general formula LiMPO4 (M is one or more of Fe(II), Mn( II), Co(II), Ni(II))) can be used. Representative examples of the general formula LiM PO4 include LiFePO4, LiNiPO4, LiCoPO4, LiMn PO4, LiFe a Ni b PO4, LiFe a Co b PO4, LiFe a Mn b PO4, LiNi a Co b PO4, LiNi a Mn b PO4 (a + b is 1 or less, 0 < a < 1, 0 < b < 1), LiFe c Ni d Co e PO4, LiFe c Ni d Mn e PO4, LiNi c Co d Mn e PO4 (c + d + e is 1 or less, 0 < c < 1, 0 < d < 1, 0 < e < 1), L iFe f Ni g Co h Mn i PO4 (f + g + h + i is 1 or less, 0 < f < 1, 0 < g < 1 、0 < h < 1, 0 < i < 1), etc.

[0276] In particular, LiFePO4 has safety, stability, high capacity density, high potential, and during initial oxidation (charging), It satisfies the requirements for a positive electrode active material in a balanced manner, such as the presence of extractable lithium ions. This is preferable because

[0277] Examples of lithium-containing materials having a layered rock salt crystal structure include lithium cobalt oxide. LiCoO2, LiNiO2, LiMnO2, and Li2MnO3 can be used. Also, LiNi 0.8 Co 0.2 O2 etc. NiCo system (general formula is LiNi x Co1 -x O2(0 <x<1))や、LiNi 0.5 Mn 0.5 NiMn system such as O2 (general formula is , LiNi x Mn 1-x O2(0 <x<1))、LiNi 1 / 3 Mn 1 / 3 Co 1 / 3 O 2. NiMnCo system (also known as NMC. The general formula is LiNi x Mn y Co 1-x-y O 2(x>0, y>0, x+y<1)) can be used. Also, Li(Ni 0.8 C o 0.15 Al 0.05 )O2, Li2MnO3-LiMO2(M=Co, Ni, Mn) etc. can be used.

[0278] Examples of lithium-containing materials having a spinel-type crystal structure include LiMn2O4, Li 1+x Mn 2-x O4, Li(MnAl)2O4, LiMn 1.5 Ni 0.5 O4 etc. There is.

[0279] Lithium-containing materials with spinel-type crystal structures containing manganese, such as LiMn2O4, , a small amount of lithium nickel oxide (LiNiO2 or LiNi 1-x MO2 (M=Co, Al, etc.) )) has the advantage of suppressing the elution of manganese and the decomposition of the electrolyte. preferable.

[0280] In addition, the positive electrode active material is a compound of the general formula Li (2-j) MSiO4 (M is Fe(II), M Lithium-containing materials such as one or more of n(II), Co(II), and Ni(II), where 0≦j≦2 The general formula Li (2-j) A typical example of MSiO4 is Li (2- j) FeSiO4, Li (2-j) NiSiO4, Li (2-j) CoSiO4, Li ( 2-j) MnSiO4, Li (2-j) Fe k Ni l SiO4, Li (2-j) Fe k C o l SiO4, Li (2-j) Fe k Mn l SiO4, Li (2-j) Ni k Co l Si O4, Li (2-j) Ni k Mn l SiO4 (k+l is less than 1, 0 <k<1、0<l<1 ), Li (2-j) Fe m Ni n Co q SiO4, Li (2-j) Fe m Ni n Mn q S iO4, Li (2-j) Ni m Co n Mn q SiO4 (m+n+q is 1 or less, 0 <m<1 , 0 < n < 1, 0 < q < 1), Li (2-j) Fe r Ni s Co t Mn u SiO4(r + s + t + u is 1 or less, 0 < r < 1, 0 < s < 1, 0 < t < 1, 0 < u < 1), etc. Lithium compounds can be used as materials.

[0281] Also, as the positive electrode active material, A x M2(XO4)3 (A = Li, Na, Mg, M = Fe, Mn, Ti, V, Nb, Al, X = S, P, Mo, W, As, Si) represented by the general formula NASICON-type compounds can be used. Examples of NASICON-type compounds include Fe2(MnO4 )3, Fe2(SO4)3, Li3Fe2(PO4)3, etc. Also, as the positive electrode active material , compounds represented by the general formula Li2MPO4F, Li2MP2O7, Li5MO4 (M = Fe, Mn), perovskite-type fluorides such as NaF3, FeF3, metal chalcogenides (sulfides, selenides, tellurides) such as TiS2, MoS 2, etc., materials having a reverse spinel-type crystal structure such as LiMVO4, vanadium oxide-based (V2O5, V6O , LiV 13 , LiV 3O8, etc.), manganese oxide, organic sulfur compounds, etc. can be used.

[0282] Also, in the positive electrode active material layer 202, in addition to the above-mentioned positive electrode active material, a binder for enhancing the adhesion of the active material, a conductive aid for enhancing the conductivity of the positive electrode active material layer 202, etc. may be included.

[0283] As the negative electrode active material layer 205, materials capable of dissolving and depositing a metal serving as a carrier ion or inserting and desorbing a carrier ion can be used. For example, lithium metal Here, the alloy-based material may be, for example, a carbon-based material or an alloy-based material. This refers to a material that can be charged and discharged through alloying and dealloying reactions with rear ions.

[0284] Lithium metal has a low redox potential (-3.045 V vs. the standard hydrogen electrode) and is lightweight. and high specific capacity per volume (3860mAh / g and 2062mAh / cm, respectively). 3 ) and is therefore preferable.

[0285] Carbon materials include graphite, easily graphitizable carbon (soft carbon), and non-graphitizable carbon (hard carbon). Examples include graphene, carbon black, carbon nanotubes, graphene, and graphene-based nanofibers.

[0286] As graphite, mesocarbon microbeads (MCMB), coke-based artificial graphite, These include artificial graphite such as titanium-based artificial graphite, and natural graphite such as spherical natural graphite.

[0287] Graphite is formed when lithium ions are inserted into graphite (when lithium-graphite intercalation compounds are formed) It shows a low potential similar to that of lithium metal (0.3 V or less vs. Li / Li + ).this This allows lithium-ion secondary batteries to exhibit high operating voltages. It has a relatively high capacity per unit volume, small volume expansion, is inexpensive, and is cheaper than lithium metal. This is preferable because it has advantages such as high safety.

[0288] In addition, an alloy material can be used as the negative electrode active material. For example, Mg, Ca, Al, Si, Ge, Sn, Pb, Sb, As a material containing at least one of Bi, Ag, Au, Zn, Cd, Hg, and In, etc. These elements have a large capacity compared to carbon, and silicon in particular is The theoretical capacity is dramatically high at 4200mAh / g. For this reason, silicon is used as the negative electrode active material. In addition, examples of materials using such elements include SiO and MgS. i, Mg2Ge, SnO, SnO2, Mg2Sn, SnS2, V2Sn3, FeSn2, CoSn2, Ni3Sn2, Cu6Sn5, Ag3Sn, Ag3Sb, Ni2MnSb, CeSb3, LaSn3, La3Co2Sn7, CoSb3, InSb, SbSn, etc. You can be there.

[0289] In addition, titanium dioxide (TiO2) and lithium titanium oxide (Li4 Ti5O 12 ), lithium-graphite intercalation compound (Li x C6), niobium pentoxide (Nb2O5 ), tungsten oxide (WO2), molybdenum oxide (MoO2), etc. can be done.

[0290] In addition, the negative electrode active material is a composite nitride of lithium and transition metals, which has a Li3N structure. つLi 3-x M x N (M=Co, Ni, Cu) can be used. For example, Li 2. 6Co 0.4 N3 has a large charge / discharge capacity (900mAh / g, 1890mAh / cm 3 )of This is preferable.

[0291] When a composite nitride of lithium and transition metals is used, lithium ions are included in the negative electrode active material, As a positive electrode active material, materials that do not contain lithium ions, such as V2O5 and Cr3O8, are used. In addition, when a material containing lithium ions is used as the positive electrode active material, However, by first removing the lithium ions contained in the positive electrode active material, As the nitride, a complex nitride of lithium and a transition metal can be used.

[0292] In addition, a material that undergoes a conversion reaction can also be used as the negative electrode active material. For example, lithium oxides such as cobalt oxide (CoO), nickel oxide (NiO), and iron oxide (FeO) A transition metal oxide that does not undergo an alloying reaction with the metal may be used as the negative electrode active material. Further materials that can react include Fe2O3, CuO, Cu2O, RuO2, Cr2 Oxides such as O3, CoS 0.89 , sulfides such as NiS and CuS, Zn3N2, Cu3N, Nitrides such as Ge3N4, phosphides such as NiP2, FeP2, CoP3, FeF3, BiF This also occurs with fluorides such as 3. Note that the potential of the above fluorides is high, so they are not used as positive electrode active materials. It's fine.

[0293] In addition to the above-mentioned negative electrode active material, the negative electrode active material layer 205 contains a material for improving the adhesion of the active material. and a conductive additive for increasing the conductivity of the negative electrode active material layer 205. That's fine.

[0294] The electrolytic solution 208 is an electrolyte capable of moving carrier ions. In addition, a material having carrier ions can be used. In the case of lithium ion, typical examples of electrolytes are LiPF6, LiClO4, Li(FSO 2)2N, LiAsF6, LiBF4, LiCF3SO3, Li(CF3SO2)2N, Lithium salts such as Li(C2F5SO2)2N are also available. Two or more of them may be used in any combination and in any ratio. To make it more stable, a small amount (1 wt%) of vinylene carbonate (VC) is added to the electrolyte. This may result in less decomposition of the electrolyte.

[0295] The solvent of the electrolyte 208 is a material that allows the movement of carrier ions. The solvent for the solution is preferably an aprotic organic solvent. Representative examples of aprotic organic solvents are: Examples include ethylene carbonate (EC), propylene carbonate, and dimethyl carbonate. diethyl carbonate (DEC), γ-butyrolactone, acetonitrile, dimethicone Examples of the methyl ether include methyl ethane and tetrahydrofuran, and one or more of these can be used. In addition, by using a polymer material that gels as a solvent for the electrolyte, it is possible to reduce leakage and other issues. This increases safety. It also makes it possible to make storage batteries thinner and lighter. Typical examples of materials are silicone gel, acrylic gel, acrylonitrile gel, and polyethylene gel. Styrene oxide gel, polypropylene oxide gel, fluorine polymer gel, etc. In addition, ionic liquids (room-temperature molten salts) that are flame-retardant and non-volatile are used as solvents for electrolytes. ) can be used to prevent the internal temperature from rising due to an internal short circuit or overcharging of the battery. Even if the temperature rises, it can prevent the battery from exploding or catching fire.

[0296] The separator 207 may be made of an insulator, for example. For example, cellulose (paper), porous polypropylene or polyethylene, etc. can be done.

[0297] The secondary battery has a thin, flexible film (for example, laminate film) as its exterior. A laminate film is a laminated film made of a base film and an adhesive synthetic resin film. It refers to a film or a laminated film of two or more types. The base film is PET or PB. Polyesters such as T, polyamides such as nylon 6 and nylon 66, and inorganic vapor deposition films As the adhesive synthetic resin film, polyethylene or polypropylene may be used. Polyolefin, acrylic synthetic resin, epoxy synthetic resin, etc. can be used. The film is laminated to the object to be treated by thermocompression bonding using a laminating device. It is preferable to apply an anchor coating agent as a pretreatment before the lamination process. The anchor coating agent can strengthen the adhesion between the anchor film and the object to be treated. For example, an isocyanate-based adhesive may be used.

[0298] In the above configuration, the exterior body 209 of the secondary battery has a curvature radius of 30 mm or more, preferably a curvature radius of 100 mm or more. The film that is the exterior of the secondary battery can be deformed within a radius of 10 mm or more. In the case of a secondary battery with a laminated structure consisting of one or two sheets, the cross section of the curved battery The surface structure is sandwiched between two curves of the film exterior.

[0299] The radius of curvature of a surface will be explained with reference to FIG. 26. In FIG. 26(A), the curved surface 170 On a plane 1701 cutting through 0, a part of a curve 1702 included in a surface 1700 is cut into a circle. Approximate the arc, and let the radius of the circle be the radius of curvature 1703 and the center of the circle be the center of curvature 1704. FIG. 26(B) shows a top view of the curved surface 1700. FIG. 26(C) shows the curved surface 1700 on the flat surface 1701. The cross section of 1700 is shown. When cutting a curved surface with a plane, the angle of the plane to the curved surface is The radius of curvature of the curve that appears in the cross section will differ depending on the cutting position and the cutting direction. etc., the smallest radius of curvature is taken as the radius of curvature of the surface.

[0300] The secondary battery is curved, sandwiching electrodes, electrolyte, etc., 1805 between two films as the exterior body. In this case, the radius of curvature 1802 of the film 1801 on the side closer to the center of curvature 1800 of the secondary battery is smaller than the radius of curvature 1804 of the film 1803 on the side farther from the center of curvature 1800 ( When a secondary battery is bent to make its cross section arc-shaped, the center of curvature is 180°. The surface of the film is subjected to compressive stress, and the surface of the film far from the center of curvature 180° is subjected to tension. The pattern formed by the recesses or protrusions on the surface of the exterior body is called the "pattern" (Fig. 27(B)). When formed, even if compressive stress or tensile stress is applied, the effect of strain is not Therefore, the secondary battery can be mounted on the exterior body near the center of curvature. The radius of curvature can be deformed within a range of 30 mm or more, preferably 10 mm or more.

[0301] The cross-sectional shape of the secondary battery is not limited to a simple arc shape, and may be a shape having a partial arc. For example, the shape shown in FIG. 27(C), a wavy shape (FIG. 27(D)), an S-shape, etc. When the curved surface of the secondary battery has a shape with multiple centers of curvature, Among the radii of curvature at each of the centers of curvature, the surface with the smallest radius of curvature is 2 The radius of curvature of the outer casing closest to the center of curvature of the outer casing is 10 mm or more, preferably 30 mm The secondary battery can be deformed within the above range.

[0302] This embodiment mode can be freely combined with other embodiment modes. [Explanation of symbols]

[0303] 100 Electronic equipment 102 Display section 103 FPC 103a FPC 104 IC 106 Circuit Board 107 Circuit Board 108 Storage battery 110 Display panel 111 Display area 112 Display area 113 Display area 114 Display area 115 Display area 120 boards 125 Support 126 Case 131 sides 132 sides 133 sides 135 Break 138 Notch 141 Drive circuit 142 Drive circuit 143 Drive circuit 145 Wiring 146 Wiring 151 Display area 152 Display area 153 Display area 161 icons 162 Textual Information 164 Text Information 167 Image Information 201 Positive electrode current collector 202 Cathode active material layer 203 Positive electrode 204 Negative electrode current collector 205 Negative electrode active material layer 206 Negative electrode 207 Separator 208 Electrolyte 209 Exterior body 400 Electronic equipment 401 Charger 510 Positive lead electrode 511 Negative lead electrode 801 board 803 board 804 Light-emitting part 806 Drive circuit section 808 FPC 811 Adhesive layer 813 Insulation layer 814 Conductive layer 815 Insulation layer 816 Conductive layer 817 Insulating layer 817a Insulating layer 817b Insulating layer 820 transistors 821 Insulation layer 822 transistor 823 Sealing layer 824 Sealing layer 825 Connector 827 Spacer 830 Light-emitting element 831 Lower electrode 833 EL layer 835 Upper electrode 841 Adhesive layer 843 Insulation Layer 845 Colored layer 847 Light blocking layer 849 Overcoat 857 Conductive layer 857a Conductive layer 857b Conductive layer 1700 curved surface 1701 Plane 1702 Curve 1703 Radius of curvature 1704 Center of curvature 1800 Center of curvature 1801 Film 1802 radius of curvature 1803 Film 1804 radius of curvature

Claims

1. The display device includes a display panel, a flexible printed wiring board, a circuit board, and a flexible plate, the plate has an area disposed on the back side of the display surface of the display panel and an area bonded to the display panel with an adhesive; the display panel is bent along at least one bending line extending in a first direction and has a portion disposed on a back side of a display surface of the display panel, the flexible printed wiring board is connected to the display panel at the portion; the circuit board is disposed on the rear side of the display surface of the display panel, the circuit board and the flexible printed wiring board are respectively overlapped with a display surface of the display panel via the board, In a cross section along the first direction, the plate has a region that is disposed outside an edge of the display panel, the display panel includes a transistor; the transistor includes an oxide semiconductor; An electronic device in which a user can bend the display panel and the plate in a second direction intersecting the first direction so that at least a portion of a display surface of the display panel is curved.

2. The display device includes a display panel, a flexible printed wiring board, a circuit board, a flexible plate, and a support member, the plate has an area disposed on the back side of the display surface of the display panel and an area bonded to the display panel with an adhesive; the display panel is bent along at least one bending line extending in a first direction and has a portion disposed on a back side of a display surface of the display panel, the flexible printed wiring board is connected to the display panel at the portion; the circuit board is disposed on the rear side of the display surface of the display panel, the circuit board and the flexible printed wiring board overlap a display surface of the display panel via the board, The circuit board is disposed in a region sandwiched between the plate and the support, In a cross section along the first direction, the plate has a region that is disposed outside an edge of the display panel, In the cross section, the support has a region that is disposed outside an edge of the display panel, the display panel includes a transistor; the transistor includes an oxide semiconductor; An electronic device in which a user can bend the display panel, the plate, and the support in a second direction intersecting the first direction so that at least a portion of the display surface of the display panel is curved.

3. The display device includes a display panel, a flexible printed wiring board, a circuit board, and a flexible metal plate, the plate has an area disposed on the back side of the display surface of the display panel and an area bonded to the display panel with an adhesive; the display panel is bent along at least one bending line extending in a first direction and has a portion disposed on a back side of a display surface of the display panel, the flexible printed wiring board is connected to the display panel at the portion; the circuit board is disposed on the rear side of the display surface of the display panel, the circuit board and the flexible printed wiring board are respectively overlapped with a display surface of the display panel via the board, In a cross section along the first direction, the plate has a region that is disposed outside an edge of the display panel, the display panel includes a transistor; the transistor includes an oxide semiconductor; An electronic device in which a user can bend the display panel and the plate in a second direction intersecting the first direction so that at least a portion of a display surface of the display panel is curved.

4. The display device includes a display panel, a flexible printed wiring board, a circuit board, a flexible metal plate, and a support member, the plate has an area disposed on the back side of the display surface of the display panel and an area bonded to the display panel with an adhesive; the display panel is bent along at least one bending line extending in a first direction and has a portion disposed on a back side of a display surface of the display panel, the flexible printed wiring board is connected to the display panel at the portion; the circuit board is disposed on the rear side of the display surface of the display panel, the circuit board and the flexible printed wiring board overlap a display surface of the display panel via the board, The circuit board is disposed in a region sandwiched between the plate and the support, In a cross section along the first direction, the plate has a region that is disposed outside an edge of the display panel, In the cross section, the support has a region that is disposed outside an edge of the display panel, the display panel includes a transistor; the transistor includes an oxide semiconductor; An electronic device in which a user can bend the display panel, the plate, and the support in a second direction intersecting the first direction so that at least a portion of the display surface of the display panel is curved.

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