X-ray detection panel, X-ray detector having the same, and unit pixel for X-ray detection panel

Abstract

An X-ray detection panel, an X-ray detector including the same, and a unit pixel of the X-ray detection panel are disclosed. The X-ray detection panel according to one embodiment includes a plurality of unit pixels, each unit pixel including a photodiode, a first readout thin film transistor, and a second readout thin film transistor, the first and second readout thin film transistors being electrically connected to the photodiode, and the first and second readout thin film transistors being connected in series with each other.

Description

[Technical Field]

[0001] The present invention relates to an X-ray detection panel with improved X-ray detection sensitivity, an X-ray detector having the same, and a unit pixel for an X-ray detection panel. [Background technology]

[0002] X-ray detectors are used not only in medical equipment for X-ray diagnostic imaging in hospitals and dental clinics, but also in industrial equipment for inspecting internal defects in electric vehicle batteries, semiconductors, electrical components, construction, aviation, and ships, inspecting cargo and cargo at airports and port facilities, and military equipment for detecting dangerous materials such as explosives.

[0003] Dynamic X-ray detectors are used in medical and industrial equipment, and in the industrial sector, they are increasingly being used in non-destructive testing, which is essential for ensuring product safety and reliability, such as in the inspection of electric vehicle batteries and semiconductors. In the medical sector, dynamic X-ray detectors are used in, for example, C-arm CT, CBCT, and CT for breast cancer diagnosis.

[0004] In a moving image X-ray detector, a high frame rate per second, low image lag, and low ghost image are required to drive and acquire high-speed images.

[0005] The X-ray detector includes an X-ray detection panel, which is an image sensor, and can detect visible light from the scintillator using a photodiode.

[0006] FIG. 1 is a schematic layout diagram for explaining an X-ray detection panel of a conventional dynamic X-ray detector.

[0007] Referring to FIG. 1, a conventional X-ray detection panel includes a plurality of unit pixels (N, N+1, N+2, . . . ), each of which includes a readout thin film transistor (TFT) and a photodiode.

[0008] The readout terminal of the readout thin film transistor, i.e., the drain, is connected to the readout IC via a readout pad, and the gate is connected to the readout gate IC via a readout gate pad. The photodiode is connected to a bias voltage terminal via a bias pad.

[0009] When irradiated with X-rays, the scintillator is excited by the X-rays and emits visible light, which is then incident on the photodiode, generating an electric charge. The electric charge generated in the photodiode is transferred to the readout pad using the readout thin-film transistor, generating a video signal.

[0010] In the case of conventional moving image X-ray detection panels, the parasitic electrostatic components of the photodiodes are not completely removed before and after image acquisition, resulting in low sensitivity and problems such as image delay and image retention. Furthermore, in conventional X-ray detection panels, the amount of current transmitted through the readout thin film transistor is quite low at about 1.0 μA, resulting in quite low brightness, i.e., sensitivity, when acquiring a digital image after analog-to-digital conversion (ADC).

[0011] In particular, when acquiring high-speed dynamic X-ray images, as the frame rate per second increases, the X-ray exposure time per frame becomes relatively shorter, but this also poses the problem of a decrease in the sensitivity, i.e., brightness, of the image.

[0012] To improve sensitivity, the hardware digital gain value can be increased, or image brightness can be improved using software after image capture. However, improving image sensitivity by amplifying the hardware digital gain value has the adverse effect of increasing image noise. Furthermore, improving image brightness through software image processing results in a trade-off between reduced resolution and increased image processing time, making it difficult to capture high-speed video frames. Summary of the Invention [Problem to be solved by the invention]

[0013] An object of the present invention is to provide an X-ray detection panel capable of increasing sensitivity without causing adverse effects such as an increase in image noise, a decrease in resolution, or an increase in image processing time, an X-ray detector having the same, and a unit pixel for the X-ray detection panel.

[0014] Another object of the present invention is to provide an X-ray detection panel capable of increasing a readout output value of each unit pixel in the X-ray detection panel, an X-ray detector having the same, and a unit pixel for the X-ray detection panel.

[0015] Another object of the present invention is to provide a dynamic X-ray detection panel capable of preventing image delay and image retention due to parasitic electrostatic components of a photodiode, an X-ray detector having the same, and a unit pixel for the X-ray detection panel. [Means for solving the problem]

[0016] According to one embodiment, an X-ray detection panel is disclosed, which includes a plurality of unit pixels, each unit pixel including a photodiode, a first readout thin film transistor, and a second readout thin film transistor, the first and second readout thin film transistors being electrically connected to the photodiode, and the first and second readout thin film transistors being connected in series with each other.

[0017] The sources of the first and second readout thin film transistors may be commonly connected to the photodiode, the gates of the first and second readout thin film transistors may be commonly connected to each other, and the drains of the first and second readout thin film transistors may be commonly connected to each other.

[0018] The X-ray detection panel may further include leadout pads; leadout gate pads; and bias pads, each of which is connected to a drain of the first and second readout thin film transistors, each of which is connected to a gate of the first and second readout thin film transistors, and each of which is connected to the photodiode.

[0019] In one embodiment, the gates of the first and second readout thin film transistors may be connected to the readout gate pad via a readout gate line, the drains of the first and second readout thin film transistors may be connected to the readout pad via a readout drain line, and the photodiode may be connected to the source of the second readout thin film transistor. Further, each unit pixel may further include a capacitor disposed between the first readout thin film transistor and the readout gate line.

[0020] Furthermore, each unit pixel may further include a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0021] In one embodiment, gates of the first and second readout thin film transistors may be connected to the readout gate pad via a readout gate line, the photodiode may be connected to sources of the first and second readout thin film transistors, and each unit pixel may further include a capacitor disposed between the first and second readout thin film transistors and the readout gate line, and a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0022] Each unit pixel may further include a reset thin film transistor, and a source of the reset thin film transistor may be connected to sources of the first and second readout thin film transistors and a photodiode.

[0023] The X-ray detection panel may further include a reset gate pad and a reset drain pad, wherein the reset gate pad may be connected to the gate of the reset thin film transistor, and the reset drain pad may be connected to the drain of the reset thin film transistor.

[0024] The sources of the first and second readout thin film transistors may be commonly connected to the photodiode, the gates of the first and second readout thin film transistors may be commonly connected to each other, and the drains of the first and second readout thin film transistors may be commonly connected to each other.

[0025] In one embodiment, the X-ray detection panel may further include leadout pads; leadout gate pads; and bias pads, each of which is connected to a drain of the first and second readout thin film transistors, each of which is connected to a gate of the first and second readout thin film transistors, and each of which is connected to the photodiode.

[0026] Each gate of the first and second readout thin film transistors may be connected to the readout gate pad via a readout gate line, each drain of the first and second readout thin film transistors may be connected to the readout pad via a readout drain line, the photodiode may be connected to the sources of the first and second readout thin film transistors, and each unit pixel may further include a capacitor disposed between the first readout thin film transistor and the readout gate line.

[0027] Each unit pixel may further include a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0028] In one embodiment, gates of the first and second readout thin film transistors are connected to the readout gate pad via a readout gate line, the photodiode is connected to sources of the first and second readout thin film transistors, and each unit pixel may further include a capacitor disposed between the first readout thin film transistor and the readout gate line, and a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0029] In one embodiment, a gate of the reset thin film transistor is connected to a reset gate pad through a reset gate line, a source of the reset thin film transistor is connected to sources of the first and second readout thin film transistors and a photodiode, and each unit pixel further includes a capacitor disposed between the reset thin film transistor and the reset gate line.

[0030] In one embodiment, each unit pixel may further include a capacitor disposed between the reset thin film transistor and the reset gate line, and a capacitor disposed between the first readout thin film transistor and the readout gate line.

[0031] In one embodiment, each unit pixel may further include a capacitor disposed between the reset thin film transistor and the reset gate line, and a capacitor disposed between the second readout thin film transistor and the readout gate line.

[0032] In one embodiment, each unit pixel may further include a capacitor arranged between the reset thin film transistor and the reset gate line, a capacitor arranged between the first readout thin film transistor and the readout gate line, and a capacitor arranged between the second readout thin film transistor and the readout gate line.

[0033] According to one embodiment of the present invention, there is disclosed an X-ray detector including an X-ray detection panel, the X-ray detection panel including a plurality of unit pixels, each unit pixel including a photodiode, a first readout thin film transistor, and a second readout thin film transistor, the first and second readout thin film transistors being electrically connected to the photodiode, and the first and second readout thin film transistors being connected in series with each other.

[0034] In one embodiment, each unit pixel further includes a reset thin film transistor.

[0035] According to one embodiment of the present invention, there is disclosed a unit pixel of an X-ray detection panel, the unit pixel including a photodiode, a first readout thin film transistor, and a second readout thin film transistor, the first and second readout thin film transistors being electrically connected to the photodiode, and the first and second readout thin film transistors being connected in series with each other.

[0036] In an embodiment, the unit pixel may further include at least one capacitor connected to the first or second readout thin film transistor.

[0037] In an embodiment, the unit pixel may further include a reset thin film transistor.

[0038] The unit pixel may further include at least one capacitor connected to any one of the first and second readout thin film transistors and the reset thin film transistor. [Effects of the Invention]

[0039] According to each embodiment of the present invention, the readout output current can be increased to increase the image sensitivity, i.e., brightness, of the X-ray detection panel. Furthermore, the introduction of a reset thin film transistor can solve problems such as image delay and image retention caused by parasitic electrostatic components. Furthermore, the placement of a capacitor can eliminate noise components in the readout gate line and output line. [Brief explanation of the drawings]

[0040] [Figure 1] FIG. 1 is a schematic layout diagram for explaining an X-ray detection panel of a conventional dynamic X-ray detector. [Figure 2]1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 3] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 4] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 5] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 6] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 7] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 8] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 9] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 10] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 11] 1 is a schematic circuit diagram illustrating an X-ray detection panel according to an embodiment of the present invention. [Figure 12] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. [Figure 13] 1 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0041] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to fully convey the concept of the present disclosure to those skilled in the art. Therefore, the present disclosure is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. Furthermore, when a component is described as being "on top of" or "on" another component, this includes not only the case where each component is "directly on top of" or "directly above" the other component, but also the case where another component is interposed between the other component and the other component. The same reference numerals refer to the same components throughout the specification.

[0042] 2 is a schematic layout diagram illustrating an X-ray detection panel of an X-ray detector according to an embodiment of the present invention. The X-ray detection panel described here is suitable for an indirect method of detecting visible light converted by a scintillator. However, the present invention is not limited to this, and may also be applied to an X-ray detection panel of a direct method of directly detecting X-rays.

[0043] 2, the X-ray detection panel includes a plurality of unit pixels (N, N+1, N+2, ...), each of which includes a first readout thin film transistor (Readout TFT 1), a second readout thin film transistor (Readout TFT 2), a photodiode, and readout pads, readout gate pads, and bias pads connected to the plurality of unit pixels (N, N+1, N+2, ...).

[0044] The plurality of unit pixels may be arranged in a matrix form, for example, but is not limited to, a matrix of 5000×5000 pixels.

[0045] The first and second readout thin film transistors (Readout TFT 1 and 2) may be switching elements using one or more of amorphous silicon, polycrystalline silicon, In-Ga-Zn-O, and In-Zn-O as a semiconductor layer. The photodiode is a photoelectric conversion element and may be made of one or a combination of two or more of amorphous silicon, polycrystalline silicon, single crystal silicon, In-Ga-Zn-O, In-Zn-O, and In-Sn-O.

[0046] First, the connection structure between the first and second readout thin film transistors (Readout TFTs 1 and 2) and the photodiode will be described using a unit pixel as an example.

[0047] The readout terminal of the first readout thin film transistor (Readout TFT 1), i.e., the drain D1, is connected to the readout IC via a readout pad, and the gate G1 is connected to the readout gate IC via a readout gate pad.

[0048] The readout terminal of the second readout thin film transistor (Readout TFT 2), i.e., drain D2, is connected to the readout IC via a readout pad, and the gate G2 is connected to the readout gate IC via a readout gate pad. The drain D1 may be electrically connected to the drain D2, and the gate G1 may be electrically connected to the gate G2. The drain D1 and the drain D2 may be commonly connected to the readout pad, and the gate G1 and the gate G2 may be commonly connected to the readout gate pad.

[0049] The first and second readout thin film transistors (Readout TFT 1 and 2) are driven by a gate voltage V Gate may be turned on and off by

[0050] The photodiode is connected to the bias voltage terminal V via the bias pad. Bias The anode of the photodiode may be connected to a bias pad, and the cathode may be commonly connected to a source S1 of a first readout thin film transistor (Readout TFT 1) and a source S2 of a second readout thin film transistor (Readout TFT 2).

[0051] A bias pad may be commonly connected to all of the unit pixels (N, N+1, N+2, ...). That is, all of the photodiodes in the detection panel may be commonly connected to one bias pad. In this embodiment, only one bias pad is provided, but multiple bias pads may be provided in the detection panel.

[0052] When X-rays are irradiated and photoelectric conversion occurs in the photodiode, the generated charges are accumulated in the sources S1 and S2 of the readout thin film transistors (Readout TFT 1 and 2). The readout gate voltage V Gate When this voltage is applied, the charges stored in the sources S1 and S2 of the readout thin film transistors (Readout TFTs 1 and 2) are output to the readout pad via the drains D1 and D2.

[0053] Meanwhile, unit pixels arranged in the same row may be commonly connected to one readout gate pad, and unit pixels arranged in different rows may be connected to different readout gate pads. That is, in the case of unit pixels arranged in the same row, gates G1 and G2 of readout thin film transistors (Readout TFTs 1 and 2) are commonly connected to one readout gate pad, and in the case of unit pixels arranged in different rows, gates of readout thin film transistors (Readout TFTs 1 and 2) are connected to different readout gate pads.

[0054] Meanwhile, the unit pixels arranged in the same column may be commonly connected to one readout pad, and the pixels arranged in different columns may be connected to different readout pads. That is, in the case of the pixels arranged in the same column, the drains D1 and D2 of the readout thin film transistors (Readout TFTs 1 and 2) are commonly connected to one readout pad, and in the case of the unit pixels arranged in different columns, the drains of the readout thin film transistors (Readout TFTs 1 and 2) are connected to different readout pads. Thus, the unit pixels arranged in one row are connected to different readout pads.

[0055] By connecting each readout thin film transistor and photodiode in each unit pixel arranged in a matrix as described above, the readout operation can be easily performed in units of lines, i.e., in units of rows, and image information optimized for high-speed moving images can be obtained.

[0056] In this embodiment, two readout thin film transistors (Readout TFTs 1 and 2) are connected in series to a photodiode. As a result, the output current value of the unit pixel according to this embodiment is increased by approximately two times compared to the conventional technology using one readout thin film transistor. For example, when one readout thin film transistor outputs a current of 1.0 μA, by connecting two readout thin film transistors in series, a current of approximately 2.0 μA can be output. As a result, an X-ray detection panel with sensitivity, i.e., brightness, increased by approximately two times compared to the conventional technology can be provided.

[0057] In this embodiment, two readout thin film transistors (Readout TFTs 1 and 2) are connected in series, but the number of readout thin film transistors connected in series may be three or more. By increasing the number of readout thin film transistors connected in series, the output current can be further increased.

[0058] According to this embodiment, the sensitivity of the X-ray detection panel can be increased by connecting a plurality of readout thin film transistors in series to increase the output current. Therefore, unlike conventional techniques that improve image brightness by increasing the digital gain value of hardware or by image processing using software, the image brightness can be improved without causing adverse effects such as increased image noise, reduced resolution, or additional image processing time.

[0059] FIG. 3 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0060] Referring to FIG. 3, the X-ray detection panel according to this embodiment is generally similar to the X-ray detection panel described with reference to FIG. 2, except that the unit pixel is connected to a capacitor C GD The difference is that it further includes

[0061] Capacitor C GD may be disposed between the first readout thin film transistor (Readout TFT 1) and the readout gate line. For example, as shown in FIG. 3, a capacitor C GD may be disposed between the drain line and the readout gate line of the first readout thin film transistor (Readout TFT 1). Since the drains D1 and D2 and the gates G1 and G2 are electrically connected to each other, the capacitor C GD is electrically connected to the drain of the second readout thin film transistor (Readout TFT 2) and the readout gate line.

[0062] Capacitor C GD By disposing the capacitor, it is possible to reduce noise components in the readout output signal. The capacitor may be made of, for example, one or a combination of two or more of Si, Si-O, Si-N, and Si-ON, but the present invention is not limited thereto.

[0063] Also, the capacitor C GD Alternatively or in addition, a dielectric material, such as one or a combination of two or more of Si—O, Si—N, and Si—ON, may be disposed between the drain D1 and the gate G1 and / or between the drain D2 and the gate G2.

[0064] FIG. 4 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0065] Referring to FIG. 4, the X-ray detection panel according to this embodiment is generally similar to the X-ray detection panel described with reference to FIG. 2, except that each unit pixel has a capacitor C GS The difference is that it further includes

[0066] Capacitor C GSmay be disposed between the second readout thin film transistor (Readout TFT 2) and the readout gate line. For example, as shown in FIG. 4, a capacitor C GS may be disposed between the source of the second readout thin film transistor (Readout TFT 2) and the readout gate line. Since the sources S1 and S2 and the gates G1 and G2 are electrically connected to each other, the capacitor C GS is also electrically connected to the source of the first readout thin film transistor (Readout TFT 1) and the readout gate line.

[0067] Capacitor C GS By disposing the capacitor, noise components of the gate line can be reduced. The capacitor may be made of, for example, one or a combination of two or more of Si, Si-O, Si-N, and Si-ON, but the present invention is not limited thereto.

[0068] Also, the capacitor C GS Alternatively or additionally, a dielectric material, such as one or a combination of two or more of Si—O, Si—N, and Si—ON, may be disposed between source S1 and gate G1 and / or between source S2 and gate G2.

[0069] FIG. 5 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0070] Referring to FIG. 5, the X-ray detection panel according to this embodiment is generally similar to the X-ray detection panel described with reference to FIG. 2, except that each unit pixel has a capacitor C GD , C GS The difference is that it further includes

[0071] Capacitor C GD , C GS is the capacitor C described with reference to FIGS. GD , C GS, and so to avoid duplication, detailed description thereof will be omitted.

[0072] Capacitor C GD , C GS By arranging the above, it is possible to reduce the noise component of the readout output signal and the noise component of the gate line.

[0073] FIG. 6 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0074] 6, the X-ray detection panel according to this embodiment is generally similar to the X-ray detection panel described with reference to FIG. 2, except that the unit pixel further includes a reset thin film transistor (Reset TFT). Furthermore, the X-ray detection panel according to this embodiment further includes reset gate pads and reset drain pads.

[0075] The drain D3 of the reset thin film transistor (Reset TFT) is connected to the drain-source voltage terminal Vds via a reset drain pad, and the gate is connected to the reset gate IC via a reset gate pad. The source S3 of the reset thin film transistor (Reset TFT) may be connected to the sources S1 and S2 of the first and second readout thin film transistors (Readout TFT 1 and 2).

[0076] All of the drains D3 of the plurality of reset thin film transistors (Rest TFTs) may be commonly connected to one reset drain pad. In another embodiment, a plurality of reset drain pads may be provided in the X-ray detection panel, and each reset drain pad may be commonly connected to each drain of the plurality of reset thin film transistors in the detection panel. The plurality of reset drain pads may be arranged vertically and / or horizontally in the detection panel. By providing a plurality of reset drain pads, the connection length between the reset drain pad and the pixel can be reduced, thereby reducing the RC delay.

[0077] Meanwhile, in the case of unit pixels arranged in the same row, the gates of the reset thin film transistors (Reset TFTs) may be commonly connected to one reset gate pad, and in the case of unit pixels arranged in different rows, the gates of the reset thin film transistors (Reset TFTs) are connected to different reset gate pads. The reset thin film transistors (Reset TFTs) are connected to the reset gate voltage V applied to the gate G3. Reset-Gate may be turned on and off by

[0078] By turning on the reset thin film transistor (Rest TFT), the parasitic electrostatic components accumulated in the photodiode and the first and second readout thin film transistors (Readout TFTs 1 and 2) can be removed.

[0079] In each unit pixel (N, N+1, N+2, ...), a line reset may be performed in units of lines, i.e., in units of rows. During line reset, the reset thin film transistor (Reset TFT) is switched to an ON state, and the readout thin film transistors (Readout TFT 1 and 2) are switched to an OFF state. For example, a gate voltage V is applied to the gate G3 of the reset thin film transistor (Reset TFT) by a reset gate IC. Reset-Gate is applied to the gates G1 and G2 of the readout thin film transistors (Readout TFT 1 and 2), and a gate voltage V Gate may be applied to the photodiode, turning off the readout thin film transistors (Readout TFT 1 and 2). Bias may be applied.

[0080] The line reset may remove residual charges in each pixel connected to a reset gate pad through each reset thin film transistor (Rest TFT), thereby resetting each pixel. After the line reset for one line is completed, the line reset for the next line may be performed. In this manner, the reset may be performed on a line basis for each unit pixel in the X-ray moving image detection panel.

[0081] After the reset, a window time may be performed to collect information due to X-ray irradiation. In this embodiment, the term "window time" refers to the time during which charges generated in a photodiode due to X-ray irradiation are accumulated. The window time may be set arbitrarily, taking into account the charge saturation time of each photodiode.

[0082] During the window time, the reset thin film transistor (Reset TFT) and the readout thin film transistors (Readout TFT 1 and 2) are switched to the off state. Also, a bias voltage V Bias may be applied.

[0083] When X-rays are irradiated, photoelectric conversion occurs in the photodiode, generating electric charges. Since the readout thin film transistors (Readout TFTs 1 and 2) and the reset thin film transistor (Reset TFT) are in the off state, the electric charges generated in the photodiode may be accumulated in the source of the photodiode or the readout thin film transistors (Read TFTs 1 and 2).

[0084] In the readout stage, the reset thin film transistor (Reset TFT) is kept in the off state, and the readout thin film transistors (Readout TFT 1 and 2) are switched to the on state. Meanwhile, a bias voltage V Bias may be applied.

[0085] In the readout stage, the charges generated by the photodiodes are transferred from the sources S1 and S2 to the drains D1 and D2 of the readout thin film transistors (Readout TFTs 1 and 2) and transferred to the readout IC via the readout pads. The readout IC can generate video information using this charge information.

[0086] The line reset, window time, and read-out steps are performed in this order, and information for one line is processed through these steps. By processing information for each line sequentially, one frame of information for all pixels can be obtained. By repeating the process of processing information line by line and obtaining information for multiple frames, moving images can be realized.

[0087] According to this embodiment, by disposing a reset thin film transistor (Reset TFT) in a unit pixel, it is possible to remove parasitic electrostatic components remaining in the photodiode and the first and second readout thin film transistors, thereby solving problems such as image delay and image retention that occur in moving image X-ray detectors.

[0088] FIG. 7 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0089] Referring to FIG. 7, the X-ray detection panel according to this embodiment is generally similar to the X-ray detection panel described with reference to FIG. 6, except that the unit pixel has a capacitor C GD The difference is that it further includes a capacitor C GD has been described with reference to FIG. 3, so a detailed description thereof will be omitted to avoid redundancy.

[0090] FIG. 8 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0091] Referring to FIG. 8, the X-ray detection panel according to this embodiment is generally similar to the X-ray detection panel described with reference to FIG. 6, except that the unit pixel has a capacitor C GS1 The difference is that it further includes a capacitor C GS1 is the capacitor C described with reference to FIG. GS , and so to avoid duplication, detailed description thereof will be omitted.

[0092] FIG. 9 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0093] Referring to FIG. 9, the X-ray detection panel according to this embodiment is generally similar to the X-ray detection panel described with reference to FIG. 6, except that the unit pixel has a capacitor C GD , C GS1 The difference is that it further includes

[0094] Capacitor C GD , C GS1 is the capacitor C described with reference to FIGS. 7 and 8. GD , C GS1 , and so to avoid duplication, detailed description thereof will be omitted.

[0095] FIG. 10 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0096] Referring to FIG. 10, the X-ray detection panel according to this embodiment is generally similar to the X-ray detection panel described with reference to FIG. 6, except that the unit pixel has a capacitor C GS2 The difference is that it further includes

[0097] Capacitor C GS2 may be disposed between the reset thin film transistor (Reset TFT) and the reset gate line. For example, as shown in FIG. 10, a capacitor C GS2 may be disposed between the source S3 of the reset thin film transistor (Reset TFT) and the reset gate line.

[0098] Capacitor C GS2 The noise component of the reset gate line can be reduced by placing a capacitor C GS2 may be composed of, for example, one or a combination of two or more of Si, Si—O, Si—N, and Si—ON, but the present invention is not limited thereto.

[0099] Also, the capacitor C GS2 Alternatively or in addition, a dielectric material, such as one or a combination of two or more of Si-O, Si-N, and Si-ON, may be disposed between the source S3 and the gate G3.

[0100] FIG. 11 is a schematic circuit diagram illustrating an X-ray detection panel according to an embodiment of the present invention.

[0101] Referring to FIG. 11, the X-ray detection panel according to this embodiment is similar to the X-ray detection panel described with reference to FIG. 10, except that the unit pixel has a capacitor C GD The difference is that it further includes a capacitor C GD has been described with reference to FIG. 7, so detailed description thereof will be omitted to avoid duplication.

[0102] FIG. 12 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0103] Referring to FIG. 12, the X-ray detection panel according to this embodiment is similar to the X-ray detection panel described with reference to FIG. 10, except that the unit pixel has a capacitor C GS1 The difference is that it further includes a capacitor C GS1 has been described with reference to FIG. 8, so detailed description thereof will be omitted to avoid duplication.

[0104] FIG. 13 is a schematic layout diagram for explaining an X-ray detection panel according to an embodiment of the present invention.

[0105] Referring to FIG. 13, the X-ray detection panel according to this embodiment is generally similar to the X-ray detection panel described with reference to FIG. 10, except that the unit pixel has a capacitor C GD , C GS1 The difference is that it further includes

[0106] Capacitor C GD , C GS1 is the capacitor C described with reference to FIGS. 7, 8, and 10. GD , C GS1 , and so to avoid duplication, detailed description thereof will be omitted.

[0107] Although various embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications can be made to the above-described embodiments without departing from the technical spirit of the present invention.

Claims

1. In an X-ray detection panel including a plurality of unit pixels, Each unit pixel is A photodiode; a first readout thin film transistor; a second readout thin film transistor; Including, the first readout thin film transistor and the second readout thin film transistor are electrically connected to the photodiode; the first readout thin film transistor and the second readout thin film transistor are connected in series with each other; X-ray detection panel.

2. sources of the first readout thin film transistor and the second readout thin film transistor are commonly connected to the photodiode; The gates of the first readout thin film transistor and the second readout thin film transistor are commonly connected to each other; The drains of the first readout thin film transistor and the second readout thin film transistor are commonly connected to each other. The X-ray detection panel according to claim 1 .

3. A lead-out pad; a lead-out gate pad; Bias pads and further comprising the lead-out pad is connected to the drains of the first lead-out thin film transistor and the second lead-out thin film transistor; the readout gate pad is connected to gates of the first readout thin film transistor and the second readout thin film transistor; the bias pad is coupled to the photodiode; The X-ray detection panel according to claim 2 .

4. Gates of the first readout thin film transistor and the second readout thin film transistor are connected to the readout gate pad through a readout gate line; drains of the first readout thin film transistor and the second readout thin film transistor are connected to the leadout pad through leadout drain lines; the photodiode is connected to sources of the first readout thin film transistor and the second readout thin film transistor; Each unit pixel further includes a capacitor disposed between the first readout thin film transistor and the readout gate line. The X-ray detection panel according to claim 3 .

5. The X-ray detection panel of claim 4 , wherein each unit pixel further comprises a capacitor disposed between the second readout thin film transistor and the readout gate line.

6. Gates of the first readout thin film transistor and the second readout thin film transistor are connected to the readout gate pad through a readout gate line; drains of the first readout thin film transistor and the second readout thin film transistor are connected to the leadout pad through leadout drain lines; Each unit pixel further includes a capacitor disposed between the second readout thin film transistor and the readout gate line. The X-ray detection panel according to claim 3 .

7. Each unit pixel further includes a reset thin film transistor; 2. The X-ray detection panel of claim 1, wherein a source of the reset thin film transistor is connected to a source of the first readout thin film transistor and a source of the second readout thin film transistor.

8. A reset gate pad; a reset drain pad; further comprising the reset gate pad is connected to the gate of the reset thin film transistor; The reset drain pad is connected to the drain of the reset thin film transistor; 8. The X-ray detection panel according to claim 7.

9. sources of the first readout thin film transistor and the second readout thin film transistor are commonly connected to the photodiode; The gates of the first readout thin film transistor and the second readout thin film transistor are commonly connected to each other; The drains of the first readout thin film transistor and the second readout thin film transistor are commonly connected to each other. The X-ray detection panel according to claim 8 .

10. A lead-out pad; a lead-out gate pad; Bias pads and further comprising the lead-out pad is connected to the drains of the first lead-out thin film transistor and the second lead-out thin film transistor; the readout gate pad is connected to gates of the first readout thin film transistor and the second readout thin film transistor; the bias pad is coupled to the photodiode; The X-ray detection panel according to claim 9 .

11. Gates of the first readout thin film transistor and the second readout thin film transistor are connected to the readout gate pad through a readout gate line; drains of the first readout thin film transistor and the second readout thin film transistor are connected to the leadout pad through leadout drain lines; the photodiode is connected to sources of the first readout thin film transistor and the second readout thin film transistor; Each unit pixel further includes a capacitor disposed between the first readout thin film transistor and the readout gate line. The X-ray detection panel according to claim 10.

12. The X-ray detection panel of claim 11 , wherein each unit pixel further comprises a capacitor disposed between the second readout thin film transistor and the readout gate line.

13. Gates of the first readout thin film transistor and the second readout thin film transistor are connected to the readout gate pad through a readout gate line; the photodiode is connected to sources of the first readout thin film transistor and the second readout thin film transistor; Each unit pixel further includes a capacitor disposed between the second readout thin film transistor and the readout gate line. The X-ray detection panel according to claim 10.

14. The gate of the reset thin film transistor is connected to a reset gate pad through a reset gate line, a source of the reset thin film transistor is connected to sources of the first readout thin film transistor and the second readout thin film transistor; Each unit pixel further includes a capacitor disposed between the reset thin film transistor and the reset gate line. The X-ray detection panel according to claim 8 .

15. In an X-ray detector including an X-ray detection panel, the X-ray detection panel includes a plurality of unit pixels; Each unit pixel is A photodiode; a first readout thin film transistor; a second readout thin film transistor; Including, the first readout thin film transistor and the second readout thin film transistor are electrically connected to the photodiode; the first readout thin film transistor and the second readout thin film transistor are connected in series with each other; X-ray detector.

16. 16. The X-ray detector of claim 15, wherein each unit pixel further includes a reset thin film transistor.

17. A unit pixel of an X-ray detection panel, A photodiode; a first readout thin film transistor; a second readout thin film transistor; Including, the first readout thin film transistor and the second readout thin film transistor are electrically connected to the photodiode; the first readout thin film transistor and the second readout thin film transistor are connected in series with each other; Unit pixel.

18. The unit pixel of claim 17 , further comprising at least one capacitor connected to the first readout thin film transistor or the second readout thin film transistor.

19. The unit pixel of claim 17 , further comprising a reset thin film transistor.

20. 20. The unit pixel of claim 19, further comprising at least one capacitor connected to any one of the first readout thin film transistor, the second readout thin film transistor, and the reset thin film transistor.

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