Encapsulating resin composition and electronic device

The resin composition for encapsulating devices are not clear.

JP2026068166APending Publication Date: 2026-04-22SUMITOMO BAKELITE CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SUMITOMO BAKELITE CO LTD
Filing Date
2024-10-10
Publication Date
2026-04-22

AI Technical Summary

Technical Problem

Existing resin compositions for encapsulating devices are not clear.

Method used

The resin composition for encapsulating devices are not clear.

Benefits of technology

The resin composition for encapsulating devices are not clear.

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide a encapsulating resin composition with improved low dielectric properties. [Solution] A sealing resin composition comprising an epoxy resin (A), an inorganic filler (C), and a silane compound (E), wherein the silane compound (E) has repeating units (r1) having a polybutadiene skeleton.
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Description

Technical Field

[0001] The present invention relates to a resin composition for sealing and an electronic device.

Background Art

[0002] A resin composition containing an epoxy resin and an inorganic filler is used, for example, as a resin composition for sealing.

[0003] In Patent Document 1, for the purpose of developing an epoxy resin composition that can be suitably used for encapsulating high-power ICs and satisfies the same flatness conditions and environmental problems, an epoxy resin composition used for encapsulating a semiconductor device, comprising: (A) an epoxy resin having a specific structure, (B) a phenolic resin, and (C) a mixture of an alumina filler and a silica filler that constitutes 80 to 92% by weight of the epoxy resin composition, wherein the ratio of the weight of the filler mixture to the total weight of (A) the epoxy resin and (B) the phenolic resin is at least 10.5 or more, and the silica filler constitutes 3 to 6% by weight of the epoxy resin composition, and (D) a curing accelerator of 0.1 to 0.4% by weight of the epoxy resin composition is disclosed.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention provides a resin composition for sealing and an electronic device with improved low dielectric characteristics.

Means for Solving the Problems

[0006] The inventors diligently conducted research to achieve the above objectives. As a result, they discovered that the low dielectric properties of the encapsulating resin composition can be improved by including a silane compound having a predetermined repeating unit, and thus completed the present invention.

[0007] [1] Epoxy resin (A) and, Inorganic filler (C) and, It contains a silane compound (E), The silane compound (E) is a encapsulating resin composition having repeating units (r1) having a polybutadiene skeleton. [2] The sealing resin composition according to [1], wherein the repeating unit (r1) includes a repeating unit represented by the following formula (R1). [ka] (In formula (R1) above, each R1 independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, each R2 independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, and p represents an integer between 1 and 1,000.) [3] The sealing resin composition according to either [1] or [2], wherein the content of the silane compound (E) is 0.01% by mass or more and 10% by mass or less when the total amount of the sealing resin composition (excluding the solvent) is 100% by mass. [4] The encapsulating resin composition according to any one of [1] to [3], wherein the number average molecular weight (on a polystyrene basis) of the silane compound (E) is 500 or more and 50,000 or less. [5] The silane compound (E) further comprises a repeating unit (r2) having an aromatic ring, The sealing resin composition according to any one of [1] to [4] above, wherein the repeating unit (r2) includes a repeating unit represented by the following formula (R2). [ka] (In formula (R2) above, R3 to R4 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, R5 each independently represents a direct bond or a hydrocarbon group having 1 to 4 carbon atoms, and R6 each independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms. If R6 is a hydrocarbon group having 1 to 4 carbon atoms, R6 may be bonded to a benzene ring one or more times, and q represents an integer between 1 and 1,000.) [6] The silane compound (E) further has repeating units (r3) having carbon-carbon double bonds, The sealing resin composition according to any one of [1] to [5] above, wherein the repeating unit (r3) includes a repeating unit represented by the following formula (R3). [ka] (In the above formula (R3), R7~R 10 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms, and r represents an integer between 1 and 1,000. [7] The silane compound (E) further comprises a repeating unit (r4) having a cyclic ether structure, The sealing resin composition according to any one of [1] to [6] above, wherein the repeating unit (r4) includes a repeating unit represented by the following formula (R4). [ka] (In the above formula (R4), R 11 ~R 12 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms, and R 13 Each of these independently represents a direct bond or a hydrocarbon group with 1 to 4 carbon atoms, R 14 ~R 15 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms, and s represents an integer between 1 and 1,000. [8] The inorganic filler (C) contains one or more selected from the group consisting of silica, alumina, calcium titanate, and titanium oxide, and the resin composition for sealing according to any one of the above [1] to [7]. [9] The dielectric loss tangent Df at 10 GHz measured by the following Method 1 10 is 0.0060 or less, and the resin composition for sealing according to any one of the above [1] to [8]. (Method 1) The resin composition for sealing is molded under the conditions of a mold temperature of 175°C, an injection pressure of 10 MPa, and a curing time of 120 seconds to produce a cured product having a length of 100 mm, a width of 3.8 mm, and a thickness of 0.8 mm. Then, for the cured product, in accordance with JIS C 6481:1996, after storing it in a room at a temperature of 23°C and a humidity of 50% for 24 hours after absolute drying, the dielectric loss tangent Df at 10 GHz under the condition of a temperature of 23°C 10 is measured.

[10] The relative permittivity Dk at 10 GHz measured by the following Method 2 10 is 3.66 or less, and the resin composition for sealing according to any one of the above [1] to [9]. (Method 2) The resin composition for sealing is molded under the conditions of a mold temperature of 175°C, an injection pressure of 10 MPa, and a curing time of 120 seconds to produce a cured product having a length of 100 mm, a width of 3.8 mm, and a thickness of 0.8 mm. Then, for the cured product, in accordance with JIS C 6481:1996, after storing it in a room at a temperature of 23°C and a humidity of 50% for 24 hours after absolute drying, the relative permittivity Dk at 10 GHz under the condition of a temperature of 23°C 10 is measured.

[11] The flexural modulus M1 at 25°C measured by the following Method 3 is 24,000 MPa or less, and the resin composition for sealing according to any one of the above [1] to

[10] . (Method 3) Using a low-pressure transfer molding machine, the sealing resin composition was injected and molded under the conditions of a mold temperature of 175°C, an injection pressure of 9.8 MPa, and a curing time of 120 seconds to produce a molded product with a length of 80 mm, a width of 10 mm, and a thickness of 4 mm. The molded product was then heat-treated at a temperature of 175°C for 4 hours as a post-curing test piece, and the flexural modulus M1 was then measured at an ambient temperature of 25°C in accordance with JIS K 6911:2006.

[12] A encapsulating resin composition according to any one of the above [1] to

[11] , which can be used for encapsulating electronic components.

[13] circuit board and An electronic component mounted on at least one surface of the aforementioned substrate, The electronic component comprises a sealing material for sealing the aforementioned electronic component, The sealing material is an electronic device comprising a cured product of the sealing resin composition described in any of [1] to

[12] above. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a encapsulating resin composition and an electronic device with improved low dielectric properties. [Brief explanation of the drawing]

[0009] [Figure 1] This figure schematically shows the cross-sectional structure of an example of the electronic device of this embodiment. [Figure 2] This figure schematically shows the cross-sectional structure of an example of the electronic device of this embodiment. [Figure 3] This figure schematically shows a cross-sectional structure of an example of a manufacturing method for the electronic device of this embodiment. [Modes for carrying out the invention]

[0010] Embodiments of the present invention will be described below with reference to the drawings. In all drawings, similar components are denoted by the same reference numerals, and their descriptions are omitted as appropriate. Also, the drawings are schematic diagrams and do not correspond to the actual dimensional ratios. Furthermore, unless otherwise specified, the "~" indicating a numerical range represents "greater than or equal to" to "less than or equal to". In this specification, the term "(meth)acrylic" refers to a concept that encompasses both acrylic and methacrylic. The same applies to similar terms such as "(meth)acryloxy."

[0011] [Sealing resin composition] The sealing resin composition of this embodiment (hereinafter also referred to as simply "resin composition" as appropriate) comprises an epoxy resin (A), an inorganic filler (C), and a silane compound (E). In the sealing resin composition of this embodiment, the silane compound (E) has repeating units (r1) having a polybutadiene skeleton. The sealing resin composition of this embodiment, having the above-described configuration, exhibits improved low dielectric properties.

[0012] The reason for this is not entirely clear, but the following reasons can be inferred. The encapsulating resin composition of this embodiment contains a silane compound (E) having repeating units (r1) with a polybutadiene skeleton. By reacting the inorganic filler (C) with the silane compound (E), the compound having repeating units with a polybutadiene skeleton can be introduced onto the surface of the inorganic filler (C). This reduces the number of polar groups on the surface of the inorganic filler (C) while increasing the number of nonpolar groups on the surface of the inorganic filler (C), thereby improving the low dielectric properties of the encapsulating resin composition.

[0013] Next, specific examples of each component of the sealing resin composition of this embodiment will be given. The sealing resin composition of this embodiment comprises an epoxy resin (A), an inorganic filler (C), and a silane compound (E). The sealing resin composition may consist of the epoxy resin (A), inorganic filler (C), and silane compound (E), or it may contain components other than the epoxy resin (A), inorganic filler (C), and silane compound (E). The sealing resin composition further includes, as specific examples of other components, one or more selected from the group consisting of a curing agent (B), curing catalyst (D), coupling agent (F), colorant, mold release agent, ion scavenger, and stress-reducing agent, as described later.

[0014] <Epoxy resin (A)> The encapsulating resin composition of this embodiment includes an epoxy resin (A). The epoxy resin (A) can be any monomer, oligomer, or polymer having two or more epoxy groups in one molecule, and its molecular weight and molecular structure are not limited.

[0015] The epoxy resin (A) includes, for example, one or more selected from the group consisting of biphenyl-type epoxy resins, bisphenol-type epoxy resins, crystalline epoxy resins, novolac-type epoxy resins, phenol aralkyl-type epoxy resins, polyfunctional epoxy resins, naphthol-type epoxy resins, heterocyclic epoxy resins, modified phenol-type epoxy resins, and epoxy compounds. The bisphenol-type epoxy resin includes, for example, one or more types selected from the group consisting of bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, and tetramethylbisphenol F-type epoxy resin. Furthermore, the crystalline epoxy resin includes one or more types selected from the group consisting of stilbene-type epoxy resins and hydroquinone-type epoxy resins. Furthermore, the novolac-type epoxy resin includes, for example, one or more types selected from the group consisting of cresol novolac-type epoxy resin, phenol novolac-type epoxy resin, and naphthol novolac-type epoxy resin. Furthermore, the phenol aralkyl type epoxy resin includes, for example, one or more selected from the group consisting of phenylene skeleton-containing phenol aralkyl type epoxy resin, biphenylene skeleton-containing phenol aralkyl type epoxy resin, phenylene skeleton-containing naphthol aralkyl type epoxy resin, alkoxynaphthalene skeleton-containing phenol aralkyl epoxy resin, and naphthol aralkyl type epoxy resin having a biphenylene skeleton. Furthermore, polyfunctional epoxy resins include, for example, trifunctional epoxy resins. Trifunctional epoxy resins include, for example, one or more selected from the group consisting of triphenolmethane type epoxy resins and alkyl-modified triphenolmethane type epoxy resins. Furthermore, the naphthol-type epoxy resin includes, for example, one or more selected from the group consisting of dihydroxynaphthalene-type epoxy resins and epoxy resins obtained by glycidyl etherification of a dimer of dihydroxynaphthalene. Furthermore, heterocyclic epoxy resins include, for example, triazine nucleus-containing epoxy resins. Triazine nucleus-containing epoxy resins include, for example, one or more selected from the group consisting of triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate. Furthermore, the modified phenol-type epoxy resin includes, for example, one or more selected from the group consisting of dicyclopentadiene-modified phenol-type epoxy resins and terpene-modified phenol-type epoxy resins.

[0016] In the sealing resin composition of this embodiment, the epoxy resin (A) preferably contains a phenol aralkyl type epoxy resin, more preferably a biphenylene skeleton-containing phenol aralkyl type epoxy resin, and even more preferably a biphenyl aralkyl type epoxy resin, from the viewpoint of improving flame retardancy.

[0017] The epoxy resin (A) content in the sealing resin composition of this embodiment is preferably 1% to 30% by mass, more preferably 2% to 25% by mass, even more preferably 3% to 20% by mass, even more preferably 4% to 15% by mass, and even more preferably 5% to 10% by mass, when the total amount of solids in the sealing resin composition of this embodiment (total amount of components remaining as solids when cured) is taken as 100% by mass.

[0018] <Inorganic filler (C)> The sealing resin composition of this embodiment contains an inorganic filler (C).

[0019] The shape of the inorganic filler (C) is not limited. The shape of the inorganic filler (C) may be, for example, in the form of a powder, a spherical shape formed from the powder, or fibrous material. The shape of the inorganic filler (C) is preferably spherical from the viewpoint of improving the balance between fluidity during molding and low mold wear.

[0020] The inorganic filler (C) includes, for example, one or more selected from the group consisting of silica, alumina, calcium titanate, titanium oxide, calcium silicate, calcium carbonate, potassium titanate, silicon carbide, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, fossterite, steatite, spinel, mullite, and titania. Silica includes, for example, one or more types selected from the group consisting of fused silica and crystalline silica.

[0021] The inorganic filler (C) preferably comprises one or more selected from the group consisting of silica, alumina, calcium titanate, and titanium oxide, and more preferably comprises one or more selected from the group consisting of silica and alumina, from the viewpoint of further improving the low dielectric properties of the sealing resin composition. The inorganic filler (C) preferably contains silica, and more preferably contains fused silica, from the viewpoint of reducing the coefficient of linear expansion. Furthermore, the inorganic filler (C) preferably contains alumina from the viewpoint of high thermal conductivity.

[0022] From the viewpoint of improving the fluidity and filling properties of the sealing resin composition during molding, the content of inorganic filler (C) in the sealing resin composition of this embodiment is preferably 70% to 95% by mass, more preferably 75% to 94% by mass, even more preferably 80% to 92% by mass, and even more preferably 85% to 90% by mass, when the total amount of solids in the sealing resin composition of this embodiment (total amount of components remaining as solids when cured) is taken as 100% by mass.

[0023] From the viewpoint of improving the fluidity and filling properties of the sealing resin composition during molding, the total content of epoxy resin (A) and inorganic filler (C) in the sealing resin composition of this embodiment is preferably 71% to 98% by mass, more preferably 80% to 97% by mass, even more preferably 85% to 96% by mass, and even more preferably 90% to 95% by mass, when the total amount of solids in the sealing resin composition of this embodiment (total amount of components remaining as solids when cured) is taken as 100% by mass.

[0024] From the viewpoint of improving the fluidity and filling properties of the sealing resin composition during molding, the content of inorganic filler (C) in the sealing resin composition of this embodiment is preferably 100 parts by mass or more and 2,000 parts by mass or less, more preferably 500 parts by mass or more and 1,800 parts by mass or less, and even more preferably 1,000 parts by mass or more and 1,500 parts by mass or less, when the epoxy resin (A) in the sealing resin composition of this embodiment is 100 parts by mass.

[0025] <Silane compound (E)> The sealing resin composition of this embodiment contains a silane compound (E). The silane compound (E) is a compound having an alkoxysilyl group. The silane compound (E) can bond to the surface of the inorganic filler (C) by a hydrolysis reaction of the alkoxysilyl group. The silane compound (E) is, for example, a silane coupling agent.

[0026] The silane compound (E) of this embodiment has repeating units (r1) having a polybutadiene skeleton, from the viewpoint of improving the low dielectric properties of the encapsulating resin composition.

[0027] From the viewpoint of improving the elastic modulus of the sealing resin composition, the repeating unit (r1) preferably includes a repeating unit (r1a) represented by the following formula (R1).

[0028] [ka]

[0029] In formula (R1), each R1 independently represents either a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms. Similarly, each R2 independently represents either a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms. Furthermore, p represents an integer between 1 and 1,000.

[0030] In formula (R1), R1 is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom, from the viewpoint of improving the elastic modulus of the sealing resin composition. In formula (R1), R2 is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom, from the viewpoint of improving the elastic modulus of the sealing resin composition.

[0031] The silane compound (E) of this embodiment preferably has a repeating unit (r2) having an aromatic ring, from the viewpoint of improving compatibility with organic resins.

[0032] From the viewpoint of improving compatibility with organic resins, the repeating unit (r2) preferably includes a repeating unit (r2a) represented by the following formula (R2). [ka]

[0033] In formula (R2), R3 to R4 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms. R5 each independently represents a direct bond or a hydrocarbon group having 1 to 4 carbon atoms. R6 each independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms. If R6 is a hydrocarbon group having 1 to 4 carbon atoms, R6 may be bonded to a benzene ring one or more times. Also, q represents an integer between 1 and 1,000.

[0034] In formula (R2), R3 is preferably one or more selected from the group consisting of a hydrogen atom and a methyl group, and more preferably a hydrogen atom, from the viewpoint of improving compatibility with organic resins. In formula (R2), R4 is preferably one or more selected from the group consisting of a hydrogen atom and a methyl group, and more preferably a hydrogen atom, from the viewpoint of improving compatibility with organic resins. In formula (R2), R5 is preferably one or more selected from the group consisting of direct bonds and methylene groups, and more preferably a direct bond, from the viewpoint of improving compatibility with organic resins. A direct bond in R5 means that an atom constituting the aromatic ring is directly bonded to a carbon atom in the main chain. In formula (R2), R6 is preferably one or more selected from the group consisting of a hydrogen atom and a methyl group, and more preferably a hydrogen atom, from the viewpoint of improving compatibility with organic resins. In formula (R2), when R6 is a hydrocarbon group having 1 to 4 carbon atoms, the number of R6 atoms bonded to the benzene ring is preferably 1 or less from the viewpoint of improving compatibility with organic resins.

[0035] The silane compound (E) of this embodiment preferably has repeating units (r3) having carbon-carbon double bonds, from the viewpoint of further improving the low dielectric properties of the encapsulating resin composition.

[0036] From the viewpoint of further improving the low dielectric properties of the encapsulating resin composition, the repeating unit (r3) preferably includes a repeating unit (r3a) represented by the following formula (R3).

[0037] [ka]

[0038] In equation (R3), R7~R 10 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms. Furthermore, r represents an integer between 1 and 1,000.

[0039] In formula (R3), R7 is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom, from the viewpoint of further improving the low dielectric properties of the encapsulating resin composition. In formula (R3), R8 is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom, from the viewpoint of further improving the low dielectric properties of the encapsulating resin composition. In formula (R3), R9 is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom, from the viewpoint of further improving the low dielectric properties of the encapsulating resin composition. In equation (R3), R 10 From the viewpoint of further improving the low dielectric properties of the sealing resin composition, it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom.

[0040] The silane compound (E) of this embodiment preferably has repeating units (r4) having a cyclic ether structure, from the viewpoint of further improving the low dielectric properties of the encapsulating resin composition.

[0041] The repeating unit (r4) preferably includes a repeating unit (r4a) represented by the following formula (R4) from the viewpoint of improving adhesion with the inorganic filler (C).

[0042] [ka]

[0043] In equation (R4), R 11 ~R 12 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms. Also, R 13 Each of these independently represents a direct bond or a hydrocarbon group with 1 to 4 carbon atoms. Also, R 14 ~R 15 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms. Also, s represents an integer between 1 and 1,000.

[0044] In equation (R4), R 11 From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom. In equation (R4), R 12 From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom. In equation (R4), R 13 From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of direct bonds and methylene groups, and more preferably direct bonds. 13 In this context, "direct bonding" means that the carbon atoms constituting the cyclic ether structure are directly bonded to the carbon atoms in the main chain. In equation (R4), R 14From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom. In equation (R4), R 15 From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom.

[0045] In this embodiment, the silane compound (E) preferably has repeating units (r5) having a polybutadiene skeleton different from the repeating unit (r1), from the viewpoint of further improving the low dielectric properties of the encapsulating resin composition.

[0046] From the viewpoint of further improving the low dielectric properties of the encapsulating resin composition, the repeating unit (r5) preferably includes a repeating unit (r5a) represented by the following formula (R5).

[0047] [ka]

[0048] In equation (R5), R 16 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms. Also, R 17 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms. Also, t represents an integer between 1 and 1,000.

[0049] In equation (R5), R 16 From the viewpoint of further improving the low dielectric properties of the sealing resin composition, it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom. In equation (R5), R 17 From the viewpoint of further improving the low dielectric properties of the sealing resin composition, it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom.

[0050] The silane compound (E) of this embodiment preferably has repeating units (r6) having alkoxysilyl groups, from the viewpoint of improving adhesion to the inorganic filler (C).

[0051] From the viewpoint of improving adhesion with the inorganic filler (C), the repeating unit (r6) preferably includes a repeating unit (r6a) represented by the following formula (R6).

[0052] [ka]

[0053] In equation (R6), R 18 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms. Also, R 19 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms. Also, R 20 Each of these independently represents either a directly bonded or divalent hydrocarbon group. Also, R 21 Each of these independently represents a hydrogen atom or a hydrocarbon group with 1 to 4 carbon atoms. Also, R 22 Each of these independently represents a hydrogen atom, a halogen atom, or a hydrocarbon group with 1 to 4 carbon atoms. Furthermore, i represents an integer between 0 and 3, and u represents an integer between 1 and 1,000.

[0054] In equation (R6), R 18 From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom. In equation (R6), R 19 From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom. In equation (R6), R 20From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of directly bonded and divalent hydrocarbon groups having 30 or fewer carbon atoms, and more preferably a divalent hydrocarbon group having 30 or fewer carbon atoms. 20 In this context, "direct bonding" means that silicon atoms are directly bonded to carbon atoms in the main chain. In equation (R6), R 21 From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of hydrogen atoms and methyl groups, and more preferably a hydrogen atom. In equation (R6), R 22 From the viewpoint of improving adhesion with the inorganic filler (C), it is preferably one or more selected from the group consisting of hydrogen atoms, halogen atoms, and methyl groups, and more preferably a hydrogen atom. In formula (R6), i is preferably 1 or more and 3 or less, and more preferably 3, from the viewpoint of improving adhesion with the inorganic filler (C).

[0055] From the viewpoint of further improving the low dielectric properties of the sealing resin composition of this embodiment, the content of silane compound (E) in the sealing resin composition of this embodiment is preferably 0.01% to 10% by mass, more preferably 0.05% to 5% by mass, even more preferably 0.1% to 1% by mass, and even more preferably 0.2% to 0.5% by mass, when the total amount of solids in the sealing resin composition of this embodiment (total amount of components remaining as solids when cured) is taken as 100% by mass.

[0056] From the viewpoint of further improving the low dielectric properties of the sealing resin composition of this embodiment, the total content of epoxy resin (A), inorganic filler (C), and silane compound (E) is preferably 71% to 99% by mass, more preferably 80% to 98% by mass, even more preferably 85% to 97% by mass, and even more preferably 90% to 96% by mass, when the total amount of solids in the sealing resin composition of this embodiment (total amount of components remaining as solids when cured) is taken as 100% by mass.

[0057] From the viewpoint of further improving the low dielectric properties of the sealing resin composition of this embodiment, the content of the silane compound (E) in the sealing resin composition of this embodiment is preferably 0.1 parts by mass or more and 10 parts by mass or less, more preferably 0.5 parts by mass or more and 9 parts by mass or less, even more preferably 1 part by mass or more and 8 parts by mass or less, even more preferably 2 parts by mass or more and 7 parts by mass or less, even more preferably 3 parts by mass or more and 6 parts by mass or less, and even more preferably 4 parts by mass or more and 5 parts by mass or less.

[0058] The number-average molecular weight (polystyrene equivalent) of the silane compound (E) in this embodiment is preferably 500 to 50,000, more preferably 1,000 to 40,000, even more preferably 2,000 to 35,000, even more preferably 3,000 to 30,000, even more preferably 4,000 to 25,000, and even more preferably 5,000 to 20,000, from the viewpoint of further improving the low dielectric properties of the sealing resin composition. In this embodiment, the method for measuring the number-average molecular weight (polystyrene equivalent) of the silane compound (E) can be, for example, the method described below for measuring the number-average molecular weight (polystyrene equivalent).

[0059] <Method for measuring number-average molecular weight (polystyrene equivalent)> The number-average molecular weight (in polystyrene equivalent) is calculated from the values ​​obtained by gel permeation chromatography (GPC) using tetrahydrofuran as the developing solvent, converted to standard polystyrene equivalents.

[0060] <Hardening agent (B)> The sealing resin composition of this embodiment preferably further comprises a curing agent (B). The curing agent (B) is a compound used to cure the epoxy resin (A).

[0061] From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the content of the curing agent (B) in the sealing resin composition of this embodiment is preferably 0.2% to 15% by mass, more preferably 0.5% to 10% by mass, even more preferably 1% to 7% by mass, even more preferably 2% to 5% by mass, and even more preferably 3% to 4% by mass, when the total amount of solids in the sealing resin composition of this embodiment (total amount of components remaining as solids when cured) is taken as 100% by mass.

[0062] From the viewpoint of improving the curability of the sealing resin composition, the content of the curing agent (B) in the sealing resin composition of this embodiment is preferably 10 parts by mass or more and 100 parts by mass or less, more preferably 30 parts by mass or more and 80 parts by mass or less, even more preferably 40 parts by mass or more and 70 parts by mass or less, and even more preferably 50 parts by mass or more and 60 parts by mass or less, when the content of the epoxy resin (A) in the sealing resin composition of this embodiment is 100 parts by mass.

[0063] In the encapsulating resin composition of this embodiment, the curing agent (B) preferably comprises one or more selected from the group consisting of an active ester resin (B1) and a phenolic resin (B2), and more preferably comprises an active ester resin (B1) and a phenolic resin (B2), from the viewpoint of further improving the low dielectric properties of the encapsulating resin composition.

[0064] In the curing agent (B) of this embodiment, the content of the active ester resin (B1) in the curing agent (B) is preferably 10 parts by mass or more and 1000 parts by mass or less, more preferably 25 parts by mass or more and 400 parts by mass or less, even more preferably 50 parts by mass or more and 200 parts by mass or less, even more preferably 80 parts by mass or more and 125 parts by mass or less, and even more preferably 90 parts by mass or more and 110 parts by mass or less, when the content of the phenol resin (B2) in the curing agent (B) is 100 parts by mass.

[0065] In the resin composition of this embodiment, the ratio of the curing agent (B), which contains an active ester resin (B1) and a phenolic resin (B2), to the epoxy resin (A) is preferably such that the epoxy groups in the epoxy resin (A) are 0.8 to 1.2 equivalents for every 1 equivalent of the active groups in the curing agent (B). Here, the active groups in the curing agent (B) refer to the arylcarbonyloxy groups and phenolic hydroxyl groups present in the resin structure.

[0066] (Activated ester resin (B1)) As the active ester resin (B1), a compound having one or more active ester groups in one molecule can be used. Preferably, the active ester resin (B1) is a compound having two or more highly reactive ester groups in one molecule. For example, the active ester resin (B1) includes one or more selected from the group consisting of phenol esters, thiophenol esters, N-hydroxyamine esters, and esters of heterocyclic hydroxy compounds.

[0067] From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the activated ester resin (B1) preferably comprises one or more selected from the group consisting of activated ester resins containing a dicyclopentadiene-type diphenol structure, activated ester resins containing a naphthalene structure, activated ester resins containing an acetylated phenol novolac, and activated ester resins containing a benzoylated phenol novolac. More preferably, the activated ester resin (B1) comprises one or more selected from the group consisting of activated ester resins containing a naphthalene structure and activated ester resins containing a dicyclopentadiene-type diphenol structure. Note that the term "dicyclopentadiene-type diphenol structure" refers to a divalent structural unit consisting of phenylene-dicyclopentylene-phenylene.

[0068] From the viewpoint of further improving the low dielectric properties of the encapsulating resin composition, the activated ester resin (B1) preferably includes a resin having a structure represented by the following formula (1).

[0069] [ka]

[0070] In formula (1), [A] represents a substituted arylene group linked via an aliphatic cyclic hydrocarbon group or an unsubstituted arylene group linked via an aliphatic cyclic hydrocarbon group. Here, a substituted arylene group is an organic group in which a hydrogen atom bonded to a carbon atom of an arylene group is substituted. Substituents of a substituted arylene group include, for example, alkyl groups having 1 to 4 carbon atoms, alkoxy groups having 1 to 4 carbon atoms, phenyl groups, aralkyl groups, etc. Furthermore, an unsubstituted arylene group refers to an organic group in which the hydrogen atoms bonded to the carbon atoms of the arylene group are not substituted.

[0071] In formula (1), [Ar'] independently represents either a substituted aryl group or an unsubstituted aryl group. Here, a substituted aryl group is an organic group in which a hydrogen atom bonded to a carbon atom of an aryl group is substituted. Substituents of a substituted aryl group include, for example, alkyl groups having 1 to 4 carbon atoms, alkoxy groups having 1 to 4 carbon atoms, phenyl groups, aralkyl groups, etc. Furthermore, an unsubstituted aryl group refers to an organic group in which the hydrogen atom bonded to the carbon atom of the aryl group is not substituted.

[0072] In equation (1), k is the average value of the repeating units and is between 0.25 and 3.5.

[0073] In formula (1), [B] represents a divalent organic group represented by the following formula (B).

[0074] [ka]

[0075] In formula (B), Ar independently represents either a substituted aryl group or an unsubstituted aryl group.

[0076] In formula (B), Y represents a single bond, a substituted or unsubstituted linear alkylene group having 1 to 6 carbon atoms, a substituted or unsubstituted cyclic alkylene group having 3 to 6 carbon atoms, a substituted or unsubstituted divalent aromatic hydrocarbon group, an ether bond, a carbonyl group, a carbonyloxy group, a sulfide group, or a sulfone group. Substituents for linear alkylene groups include alkyl groups having 1 to 4 carbon atoms, alkoxy groups having 1 to 4 carbon atoms, phenyl groups, and aralkyl groups. Similarly, substituents for cyclic alkylene groups include alkyl groups having 1 to 4 carbon atoms, alkoxy groups having 1 to 4 carbon atoms, phenyl groups, and aralkyl groups. Furthermore, substituents for aromatic hydrocarbon groups include alkyl groups having 1 to 4 carbon atoms, alkoxy groups having 1 to 4 carbon atoms, phenyl groups, and aralkyl groups.

[0077] Preferred Y includes single bonds, methylene groups, -CH(CH3)2-, ether bonds, optionally substituted cycloalkylene groups, optionally substituted 9,9-fluorenylene groups, and the like.

[0078] In equation (B), n is an integer between 0 and 4. n is preferably 0 or 1.

[0079] The curing agent (B) contains an active ester resin (B1) having an active ester group represented by formula (B), which improves the low dielectric properties of the cured product of the encapsulating resin composition. The reason for this is thought to be as follows. When epoxy resin (A) was cured with a conventional curing agent, secondary hydroxyl groups were formed due to ring opening of the epoxy groups. These secondary hydroxyl groups worsened the low dielectric properties of the cured epoxy resin. On the other hand, when epoxy resin (A) is cured using a curing agent (B) containing an active ester resin (B1) (hereinafter also referred to as the active ester curing agent), the secondary hydroxyl groups generated by ring-opening of the epoxy groups are sequestered by the ester residues of the active ester curing agent. This improves the low dielectric properties of the cured product of the encapsulating resin composition.

[0080] In formula (1), [B] preferably includes a structure represented by the following formula (B1) or a structure represented by the following formula (B2), from the viewpoint of further improving the low dielectric properties of the encapsulating resin composition.

[0081] [ka]

[0082] In equations (B1) and (B2), Ar and Y are the same as Ar and Y in equation (B).

[0083] In formula (1), [B] more preferably includes one or more structures selected from the group consisting of the following formulas (B-1) to (B-6), from the viewpoint of improving the balance between the low dielectric properties and adhesion to metal of the sealing resin composition.

[0084] [ka]

[0085] In each of equations (B-1) to (B-6), R 1 Each of these independently represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a phenyl group, or an aralkyl group. Also, R 2 Each of these independently represents an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a phenyl group. In formulas (B-1) to (B-6), X represents a linear alkylene group having 2 to 6 carbon atoms, an ether bond, a carbonyl group, a carbonyloxy group, a sulfide group, or a sulfone group. Furthermore, n represents an integer between 0 and 4. Also, p represents an integer between 1 and 4.

[0086] The structures represented by formulas (B-1) to (B-6) are all highly oriented structures. Therefore, when a curing agent (B) containing an active ester resin (B1) having these structures is used, the balance between the low dielectric properties and adhesion to metal of the encapsulating resin composition can be improved. For this reason, the encapsulating resin composition can be suitably used as a semiconductor encapsulating material.

[0087] From the viewpoint of further improving the low dielectric properties of the encapsulating resin composition, the activated ester resin (B1) preferably has one or more structures selected from the group consisting of the structure represented by formula (B-2), the structure represented by formula (B-3), and the structure represented by formula (B-5). More preferably, the activated ester resin (B1) has one or more structures selected from the group consisting of the structure represented by formula (B-2) when n=0, the structure represented by formula (B-3) when X is an ether bond, and the structure represented by formula (B-5) when two carbonyloxy groups are bonded at the 4,4'-position. From the viewpoint of further improving the low dielectric properties of the encapsulating resin composition, the activated ester resin (B1) preferably contains R in formulas (B-1) to (B-6). 1 These are all hydrogen atoms.

[0088] In formula (1), "Ar'" is preferably an aryl group, more preferably one or more selected from the group consisting of phenyl group, o-tolyl group, m-tolyl group, p-tolyl group, 3,5-xylyl group, o-biphenyl group, m-biphenyl group, p-biphenyl group, 2-benzylphenyl group, 4-benzylphenyl group, 4-(α-cumyl)phenyl group, 1-naphthyl group, and 2-naphthyl group, and even more preferably one or more selected from the group consisting of 1-naphthyl group or 2-naphthyl group.

[0089] In this embodiment, "A" in formula (1) can be, for example, a structure obtained by polyaddition of an unsaturated aliphatic cyclic hydrocarbon compound containing two double bonds in one molecule (hereinafter also referred to as compound a1) and a phenolic compound (hereinafter also referred to as compound a2).

[0090] Compound a1 preferably comprises one or more selected from the group consisting of dicyclopentadiene, cyclopentadiene polymers, tetrahydroindene, 4-vinylcyclohexene, 5-vinyl-2-norbornene, and limonene, and more preferably comprises dicyclopentadiene, from the viewpoint of improving the heat resistance of the cured product of the resulting sealing resin composition. Since dicyclopentadiene is found in petroleum fractions, industrial-grade dicyclopentadiene may contain impurities such as cyclopentadiene polymers, other aliphatic diene compounds, or aromatic diene compounds. Therefore, considering the heat resistance, curability, and moldability of the cured product of the resulting encapsulating resin composition, it is preferable to use a product with a dicyclopentadiene purity of 90% by mass or higher.

[0091] On the other hand, compound a2 preferably contains one or more selected from the group consisting of phenol, cresol, xylenol, ethylphenol, isopropylphenol, butylphenol, octylphenol, nonylphenol, vinylphenol, isopropenylphenol, allylphenol, phenylphenol, benzylphenol, chlorphenol, bromuphenol, 1-naphthol, 2-naphthol, 1,4-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, and 2,7-dihydroxynaphthalene, from the viewpoint of improving the balance between the curability and low dielectric properties of the sealing resin composition.

[0092] In formula (1), "A" has a structure represented by the following formula (A), from the viewpoint of improving the balance between the low dielectric properties of the sealing resin composition and the adhesion to the insert product.

[0093] [ka]

[0094] In equation (A), R 3Each of these independently represents a hydrogen atom, an alkyl group with 1 to 4 carbon atoms, an alkoxy group with 1 to 4 carbon atoms, a phenyl group, or an aralkyl group. Furthermore, l represents an integer of 0 or 1, and m represents an integer of 1 or greater.

[0095] The active ester resin (B1) preferably includes one or more resins selected from the group consisting of the resin represented by the following formula (1-1), the resin represented by the following formula (1-2), and the resin represented by the following formula (1-3), from the viewpoint of further improving the low dielectric properties of the encapsulating resin composition.

[0096] [ka]

[0097] [ka]

[0098] [ka]

[0099] In equations (1-1) to (1-3), R 1 and R 3 Each of these independently represents a hydrogen atom, an alkyl group with 1 to 4 carbon atoms, an alkoxy group with 1 to 4 carbon atoms, a phenyl group, or an aralkyl group. Z represents a phenyl group, a naphthyl group, a phenyl group having 1 to 3 alkyl groups with 1 to 4 carbon atoms on an aromatic ring, or a naphthyl group having 1 to 3 alkyl groups with 1 to 4 carbon atoms on an aromatic ring. l represents an integer of 0 or 1. k represents the average value of the repeating units, between 0.25 and 3.5.

[0100] The activated ester resin (B1) can be produced by a known method of reacting a phenolic compound (a) having a structure in which multiple aryl groups having phenolic hydroxyl groups are bonded via an aliphatic cyclic hydrocarbon group, an aromatic ring-containing dicarboxylic acid or its halide (b), and an aromatic monohydroxy compound (c).

[0101] The reaction ratio of the phenolic compound (a), the aromatic ring-containing dicarboxylic acid or its halide (b), and the aromatic monohydroxy compound (c) can be appropriately adjusted according to the desired molecular design. From the viewpoint of obtaining a highly curable active ester curing agent, it is preferable to use each raw material in a ratio such that, for every 1 mole of total carboxyl groups or acid halide groups of the aromatic ring-containing dicarboxylic acid or its halide (b), the phenolic hydroxyl groups of the phenolic compound (a) are in the range of 0.25 to 0.90 moles, and the hydroxyl groups of the aromatic monohydroxy compound (c) are in the range of 0.10 to 0.75 moles. More preferably, each raw material is used in a ratio such that the phenolic hydroxyl groups of the phenolic compound (a) are in the range of 0.50 to 0.75 moles, and the hydroxyl groups of the aromatic monohydroxy compound (c) are in the range of 0.25 to 0.50 moles.

[0102] Furthermore, from the viewpoint of improving the balance between the curability and low dielectric properties of the encapsulating resin composition, the functional group equivalent of the active ester resin (B1) is preferably 200 g / eq to 230 g / eq, more preferably 210 g / eq to 220 g / eq, when the total number of aryl carbonyloxy groups and phenolic hydroxyl groups in the structure of the active ester resin (B1) is considered as the number of functional groups in the resin.

[0103] (Phenolic resin (B2)) As the phenolic resin (B2), any resin commonly used in encapsulating resin compositions can be used, as long as it does not impair the effects of the present invention.

[0104] The phenolic resin (B2) of this embodiment includes, for example, one or more selected from the group consisting of novolac-type phenolic resins, polyvinylphenols, polyfunctional phenolic resins, modified phenolic resins, phenol aralkyl-type phenolic resins, and bisphenol compounds. The novolac-type phenolic resin includes, for example, one or more selected from the group consisting of phenol novolac resin, cresol novolac resin, bisphenol novolac, and phenol-biphenyl novolac resin. Furthermore, polyfunctional phenolic resins include, for example, triphenylmethane-type phenolic resins. Furthermore, the modified phenol resin includes, for example, one or more selected from the group consisting of terpene-modified phenol resins and dicyclopentadiene-modified phenol resins. Furthermore, the phenol aralkyl type phenol resin includes, for example, one or more selected from the group consisting of phenylene skeleton-containing phenol aralkyl resin, biphenylene skeleton-containing phenol aralkyl resin, phenylene skeleton-containing naphthol aralkyl resin, and biphenylene skeleton-containing naphthol aralkyl resin. Furthermore, the bisphenol compound includes, for example, one or more compounds selected from the group consisting of bisphenol A and bisphenol F.

[0105] From the viewpoint of improving the low hygroscopicity of the sealing resin composition, the phenolic resin (B2) preferably includes a resin having a biphenyl aralkyl structure, and more preferably includes a phenolic aralkyl resin having a biphenylene skeleton. In this embodiment, it is preferable that one or both of the epoxy resin (A) and the phenolic resin (B2) have a biphenyl aralkyl structure.

[0106] (Other hardening agents) The curing agent of this embodiment may also contain other curing agents besides the activated ester resin (B1) and the phenolic resin (B2).

[0107] Other curing agents include, for example, one or more selected from the group consisting of amine compounds, amide compounds, and acid anhydrides. The amine compound includes, for example, one or more selected from the group consisting of diaminodiphenylmethane, diethylenetriamine, triethylenetetramine, diaminodiphenylsulfone, isophoronediamine, imidazole, BF3-amine complexes, and guanidine derivatives. Furthermore, the amide compound includes, for example, one or more selected from the group consisting of dicyandiamide and polyamide resins synthesized from a linolenic acid dimer and ethylenediamine. Furthermore, the acid anhydride includes, for example, one or more selected from the group consisting of phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride, and methylhexahydrophthalic anhydride.

[0108] <Curing catalyst (D)> The sealing resin composition of this embodiment preferably further comprises a curing catalyst (D).

[0109] The curing catalyst (D) preferably comprises one or more selected from the group consisting of tetrasubstituted phosphonium compounds, onium salt compounds, organophosphines, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, adducts of phosphorium compounds and silane compounds, imidazole compounds, and tertiary amines, more preferably comprising a tetrasubstituted phosphonium compound, and even more preferably comprising tetraphenylphosphonium bis(naphthalene-2,3-dioxy)phenyl silicate.

[0110] The organophosphine includes, for example, one or more selected from the group consisting of triphenylphosphine, tributylphosphine, and trimethylphosphine. The imidazole compounds include, for example, one or more selected from the group consisting of 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methyl-5-hydroxyimidazole, and 1-benzyl-2-phenylimidazole. The tertiary amine includes, for example, one or more selected from the group consisting of 1,8-diazabicyclo[5.4.0]-7-undecene, triethanolamine, and benzyldimethylamine.

[0111] From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the content of the curing catalyst (D) in the sealing resin composition of this embodiment is preferably 0.01% to 5% by mass, more preferably 0.1% to 1% by mass, even more preferably 0.2% to 0.8% by mass, even more preferably 0.3% to 0.7% by mass, and even more preferably 0.4% to 0.6% by mass, when the total amount of solids in the sealing resin composition of this embodiment (total amount of components remaining as solids when cured) is taken as 100% by mass.

[0112] From the viewpoint of improving the curability of the sealing resin composition, the content of the curing agent (D) in the sealing resin composition of this embodiment is preferably 1 to 20 parts by mass, more preferably 2 to 15 parts by mass, even more preferably 3 to 12 parts by mass, even more preferably 4 to 10 parts by mass, even more preferably 5 to 9 parts by mass, and even more preferably 6 to 8 parts by mass, when the content of the epoxy resin (A) in the sealing resin composition of this embodiment is 100 parts by mass.

[0113] <Coupling agent (F)> The sealing resin composition of this embodiment preferably further comprises a coupling agent (F). The coupling agent (F) in this embodiment is a compound used to ensure adhesion between the sealing resin composition and the metal member. The coupling agent (F) includes, for example, silane coupling agents other than the silane compound (E).

[0114] The coupling agent (F) of this embodiment includes, for example, one or more selected from the group consisting of mercaptosilane, vinylsilane, epoxysilane, styrylsilane, (meth)acrylsilane, aminosilane, isocyanuratesilane, alkylsilane, ureidosilane, isocyanatesilane, titanium compounds, aluminum chelates, and aluminum / zirconium compounds. Mercaptosilane includes, for example, one or more selected from the group consisting of 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane. Furthermore, the vinylsilane includes, for example, one or more selected from the group consisting of vinyltrimethoxysilane and vinyltriethoxysilane. Furthermore, the epoxysilane includes, for example, one or more selected from the group consisting of 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, and 3-glycidoxypropyltriethoxysilane. Furthermore, styrylsilanes include, for example, p-styryltrimethoxysilane. Furthermore, (meth)acrylosisilane includes, for example, one or more selected from the group consisting of 3-(meth)acryloxypropylmethyldimethoxysilane, 3-(meth)acryloxypropyltrimethoxysilane, 3-(meth)acryloxypropylmethyldiethoxysilane, and 3-(meth)acryloxypropyltriethoxysilane. Furthermore, the aminosilane includes, for example, one or more selected from the group consisting of N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethylbutylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, and phenylaminopropyltrimethoxysilane. Furthermore, ureidosilanes include, for example, 3-ureidopropyltrialkoxysilane. Furthermore, isocyanate silanes include, for example, 3-isocyanatetopropyltriethoxysilane.

[0115] The coupling agent (F) of this embodiment preferably comprises a mercapto-based coupling agent, more preferably a mercaptosilane, even more preferably one or more selected from the group consisting of 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane, and even more preferably 3-mercaptopropyltrimethoxysilane.

[0116] From the viewpoint of improving adhesion between the sealing resin composition and the metal member, the content of the coupling agent (F) in the sealing resin composition of this embodiment is preferably 0.001% to 5% by mass, more preferably 0.005% to 1% by mass, even more preferably 0.01% to 0.5% by mass, and even more preferably 0.05% to 0.2% by mass, when the total amount of solids in the sealing resin composition of this embodiment (total amount of components remaining as solids when cured) is taken as 100% by mass.

[0117] <Other additives> The sealing resin composition of this embodiment may further contain other additives in addition to the components described above, if necessary. Examples of other additives include colorants, release agents, ion scavengers, stress reducers, dispersion stabilizers, fluidity imparters, flame retardants, antioxidants, and thermosetting resins other than epoxy resin (A). The following describes some of the representative ingredients.

[0118] <Coloring agent> The sealing resin composition of this embodiment preferably further contains a coloring agent from the viewpoint of providing color.

[0119] The coloring agent preferably comprises one or more selected from the group consisting of carbon black, red iron oxide, and titanium dioxide, and more preferably comprises carbon black, from the viewpoint of providing color.

[0120] From the viewpoint of providing color, the content of the colorant in the sealing resin composition of this embodiment is preferably 0.01% by mass or more and 1% by mass or less, more preferably 0.1% by mass or more and 0.5% by mass or less, and even more preferably 0.2% by mass or more and 0.4% by mass or less, when the total amount of solids in the sealing resin composition of this embodiment (the total amount of components remaining as solids when cured) is taken as 100% by mass.

[0121] <Release agent> The sealing resin composition of this embodiment preferably further contains a release agent, from the viewpoint of improving the balance between fluidity and thermal conductivity.

[0122] The release agent preferably comprises one or more selected from the group consisting of synthetic waxes, natural waxes, higher fatty acids, metal salts of higher fatty acids, paraffin, and carboxylic acid amides, more preferably synthetic waxes, and even more preferably oxidized polyethylene wax.

[0123] The synthetic wax includes, for example, one or more selected from the group consisting of montanic acid ester wax and oxidized polyethylene wax. Furthermore, natural waxes include, for example, carnauba wax. Furthermore, higher fatty acids include, for example, stearic acid. Furthermore, metal salts of higher fatty acids include, for example, zinc stearate. Furthermore, carboxylic acid amides include, for example, erucic acid amide.

[0124] From the viewpoint of improving the balance between fluidity and thermal conductivity, the release agent content in the sealing resin composition of this embodiment is preferably 0.01% to 1% by mass, more preferably 0.05% to 0.5% by mass, and even more preferably 0.1% to 0.2% by mass, when the total amount of solids in the sealing resin composition of this embodiment (the total amount of components remaining as solids when cured) is taken as 100% by mass.

[0125] <Ion scavenger> The encapsulating resin composition of this embodiment preferably further contains an ion scavenger, from the viewpoint of improving reliability.

[0126] The ion scavenger preferably comprises hydrotalcites and one or more elements selected from the group consisting of hydrated oxides of elements selected from magnesium, aluminum, bismuth, titanium, and zirconium, more preferably hydrated oxides of elements selected from magnesium, aluminum, bismuth, titanium, and zirconium, and even more preferably magnesium-aluminum-hydroxide-carbonate-hydrate.

[0127] From the viewpoint of improving reliability, the content of the ion scavenger in the sealing resin composition of this embodiment is preferably 0.01% to 0.5% by mass, more preferably 0.02% to 0.3% by mass, and even more preferably 0.05% to 0.15% by mass, when the total amount of solids in the sealing resin composition of this embodiment (the total amount of components remaining as solids when cured) is taken as 100% by mass.

[0128] <Low stress agent> The sealing resin composition of this embodiment preferably further contains a stress-reducing agent from the viewpoint of improving stress-reducing properties.

[0129] The low-stress agent preferably comprises one or more selected from the group consisting of silicone compounds, polybutadiene compounds, and butadiene-acrylonitrile copolymers, from the viewpoint of improving low stress properties, more preferably comprises one or more selected from the group consisting of polyether-modified silicone oil and carboxyl-terminated butadiene-acrylonitrile copolymers, and even more preferably comprises a carboxyl-terminated butadiene-acrylonitrile copolymer. The silicone compound includes, for example, one or more selected from the group consisting of silicone oils and silicone rubbers. Furthermore, butadiene-acrylonitrile copolymers include, for example, carboxyl-terminated butadiene-acrylonitrile copolymers.

[0130] From the viewpoint of improving low stress properties, the content of the low-stress agent in the sealing resin composition of this embodiment is preferably 0.01% by mass or more and 0.5% by mass or less, more preferably 0.02% by mass or more and 0.3% by mass or less, and even more preferably 0.05% by mass or more and 0.15% by mass or less, when the total amount of solids in the sealing resin composition of this embodiment (the total amount of components remaining as solids when cured) is taken as 100% by mass.

[0131] <Dispersing stabilizer> The sealing resin composition of this embodiment preferably further contains a dispersion stabilizer, from the viewpoint of improving the balance between fluidity and thermal conductivity.

[0132] From the viewpoint of improving the balance of fluidity and thermal conductivity, the dispersion stabilizer preferably includes one or more selected from the group consisting of alkyl sulfonic acid compounds, quaternary ammonium compounds, higher alcohol alkylene oxide compounds, polyhydric alcohol ester compounds, alkyl polyamine compounds, polyphosphate compounds, polycarboxylic acid compounds, polyethylene glycol compounds, polyether compounds, anionic surfactants, cationic surfactants, and nonionic surfactants.

[0133] <Fluidity enhancer> The sealing resin composition of this embodiment preferably further includes a fluidity imparting agent, from the viewpoint of improving the balance between fluidity and thermal conductivity. The fluidity imparter preferably includes one or more compounds selected from the group consisting of compounds in which hydroxyl groups are bonded to two or more adjacent carbon atoms constituting an aromatic ring, such as catechol, pyrogallol, gallic acid, gallic acid esters, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, and derivatives thereof, from the viewpoint of improving the balance of fluidity and thermal conductivity performance.

[0134] <Flame retardant> The sealing resin composition of this embodiment preferably further contains a flame retardant from the viewpoint of improving flame retardancy.

[0135] The flame retardant includes one or more selected from the group consisting of aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, and phosphazene, from the viewpoint of improving flame retardancy.

[0136] <Antioxidant> The sealing resin composition of this embodiment preferably further contains an antioxidant from the viewpoint of improving reliability.

[0137] From the viewpoint of improving reliability, the antioxidant preferably includes one or more selected from the group consisting of hindered phenol compounds, hindered amine compounds, and thioether compounds.

[0138] <Thermosetting resins other than epoxy resin (A)> The sealing resin composition of this embodiment may further contain thermosetting resins other than epoxy resin (A). Thermosetting resins other than epoxy resin (A) include, for example, one or more selected from cyanate resins, resins having two or more radically polymerizable carbon-carbon double bonds in one molecule, and maleimide resins.

[0139] [Method for preparing a encapsulating resin composition] The sealing resin composition of this embodiment can be manufactured by uniformly mixing the above components and any additives used as needed in a mixer or blender such as a tumbler mixer or Henschel mixer to a predetermined content, and then kneading while heating in a kneader, roll, disper, adi-homogenizer mixer, planetary mixer, or the like. Furthermore, the temperature during mixing must be within a temperature range where no curing reaction occurs. Depending on the composition of the epoxy resin (A) and the curing agent (B), the temperature is preferably 70°C or higher, more preferably 80°C or higher, even more preferably 90°C or higher, and preferably 150°C or lower, more preferably 130°C or lower, and even more preferably 110°C or lower. After mixing, the mixture may be cooled and solidified, and then processed into powder, granules, tablets, or sheets. The sealing resin composition of this embodiment can be manufactured, for example, by the method described in the examples.

[0140] [Physical properties of sealing resin compositions] Next, the physical properties of the encapsulating resin composition will be described.

[0141] <Dielectric loss tangent> The dielectric loss tangent Df at 10 GHz for the encapsulating resin composition of this embodiment is measured by the following method 1. 10 Explain.

[0142] Dielectric loss tangent Df 10 From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the dielectric constant is preferably 0.0060 or less, more preferably 0.0059 or less, even more preferably 0.0058 or less, even more preferably 0.0057 or less, even more preferably 0.0056 or less, even more preferably 0.0055 or less, even more preferably 0.0054 or less, and even more preferably 0.0053 or less. Dielectric loss tangent Df 10 The lower limit is not particularly restricted, but may be, for example, 0.0010 or higher, 0.0020 or higher, 0.0030 or higher, 0.0040 or higher, or 0.0050 or higher. Dielectric loss tangent Df 10 From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the preferably range is 0.0010 to 0.0060, more preferably 0.0010 to 0.0059, even more preferably 0.0010 to 0.0058, even more preferably 0.0010 to 0.0057, even more preferably 0.0020 to 0.0056, even more preferably 0.0030 to 0.0055, even more preferably 0.0040 to 0.0054, and even more preferably 0.0050 to 0.0053.

[0143] (Method 1) The sealing resin composition is molded under the conditions of a mold temperature of 175°C, injection pressure of 10 MPa, and curing time of 120 seconds to produce a cured product with a length of 100 mm, a width of 3.8 mm, and a thickness of 0.8 mm. The cured product is then stored for 24 hours in a room at 23°C and 50% humidity after complete drying, in accordance with JIS C 6481:1996. Subsequently, the dielectric loss tangent Df at 10 GHz under the conditions of 23°C is measured. 10 Measure. Here, the dielectric loss tangent Df of the sealing resin composition of this embodiment 10 More specifically, the measurement method can be the one described in the examples.

[0144] Dielectric loss tangent Df 10 This can be adjusted, for example, by adjusting the content of epoxy resin (A), inorganic filler (C), silane compound (E), curing agent (B), curing catalyst (D), the blending ratio of the encapsulating resin composition, the type of epoxy resin (A), the type of inorganic filler (C), the type of silane compound (E), the type of curing agent (B), the type of curing catalyst (D), the types of other components, or the manufacturing conditions of the encapsulating resin composition.

[0145] Next, the dielectric loss tangent Df1 at 1 GHz, measured by the following method 1a, will be described for the sealing resin composition of this embodiment.

[0146] From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the dielectric loss tangent Df1 is preferably 0.0055 or less, more preferably 0.0054 or less, even more preferably 0.0053 or less, even more preferably 0.0052 or less, even more preferably 0.0051 or less, even more preferably 0.0050 or less, even more preferably 0.0049 or less, even more preferably 0.0048 or less, even more preferably 0.0047 or less, even more preferably 0.0046 or less, even more preferably 0.0045 or less, and even more preferably 0.0044 or less. The lower limit of the dielectric loss tangent Df1 is not particularly limited, but it may be, for example, 0.0010 or higher, 0.0020 or higher, 0.0030 or higher, or 0.0040 or higher.

[0147] (Method 1a) Except for changing the measurement frequency from 10 GHz to 1 GHz, the dielectric loss tangent Df1 at 1 GHz is measured under the same conditions as in (Method 1). Here, the method for measuring the dielectric loss tangent Df1 of the sealing resin composition in this embodiment can be more specifically the method described in the example.

[0148] The dielectric loss tangent Df1 is, for example, the dielectric loss tangent Df 10 It can be adjusted using the same method as the adjustment method for [another method].

[0149] Next, the dielectric loss tangent Df5 at 5 GHz, measured by the following method 1b, will be described for the sealing resin composition of this embodiment.

[0150] From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the dielectric loss tangent Df5 is preferably 0.0060 or less, more preferably 0.0059 or less, even more preferably 0.0058 or less, even more preferably 0.0057 or less, even more preferably 0.0056 or less, even more preferably 0.0055 or less, even more preferably 0.0054 or less, even more preferably 0.0053 or less, even more preferably 0.0052 or less, even more preferably 0.0051 or less, and even more preferably 0.0050 or less. The lower limit of the dielectric loss tangent Df5 is not particularly limited, but it may be, for example, 0.0010 or higher, 0.0020 or higher, 0.0030 or higher, or 0.0040 or higher. From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the dielectric loss tangent Df5 is preferably 0.0010 to 0.0060, more preferably 0.0010 to 0.0059, even more preferably 0.0010 to 0.0058, even more preferably 0.0010 to 0.0057, even more preferably 0.0010 to 0.0056, even more preferably 0.0010 to 0.0055, even more preferably 0.0010 to 0.0054, even more preferably 0.0010 to 0.0053, even more preferably 0.0020 to 0.0052, even more preferably 0.0030 to 0.0051, and even more preferably 0.0040 to 0.0050.

[0151] (Method 1b) The dielectric loss tangent Df5 at 5 GHz was measured under the same conditions as in (Method 1), except that the measurement frequency was changed from 10 GHz to 5 GHz. Here, the method for measuring the dielectric loss tangent Df5 of the sealing resin composition in this embodiment can be more specifically the method described in the example.

[0152] The dielectric loss tangent Df5 is, for example, the dielectric loss tangent Df 10 It can be adjusted using the same method as the adjustment method for [another method].

[0153] <Dielectric constant> The dielectric constant Dk at 10 GHz of the encapsulating resin composition of this embodiment is measured by the following method 2. 10 Explain.

[0154] Dielectric constant Dk 10 From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the value is preferably 3.66 or less, more preferably 3.65 or less, even more preferably 3.64 or less, and even more preferably 3.63 or less. Dielectric constant Dk 10 There is no particular restriction on the lower limit, but for example it may be 3.50 or higher, 3.51 or higher, 3.52 or higher, 3.53 or higher, 3.54 or higher, or 3.55 or higher. Dielectric constant Dk 10 From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the dielectric is preferably 3.50 or more and 3.66 or less, more preferably 3.51 or more and 3.65 or less, even more preferably 3.52 or more and 3.64 or less, even more preferably 3.53 or more and 3.63 or less, even more preferably 3.54 or more and 3.63 or less, and even more preferably 3.55 or more and 3.63 or less.

[0155] (Method 2) The sealing resin composition is molded under the conditions of a mold temperature of 175°C, injection pressure of 10 MPa, and curing time of 120 seconds to produce a cured product with a length of 100 mm, a width of 3.8 mm, and a thickness of 0.8 mm. The cured product is then stored for 24 hours in a room at 23°C and 50% humidity after oven drying, in accordance with JIS C 6481:1996. Subsequently, the dielectric constant Dk at 10 GHz is measured at 23°C. 10 Measure. Here, the dielectric constant Dk of the sealing resin composition of this embodiment 10 More specifically, the measurement method can be the one described in the examples.

[0156] Dielectric constant Dk 10 This can be adjusted, for example, by adjusting the content of epoxy resin (A), inorganic filler (C), silane compound (E), curing agent (B), curing catalyst (D), the blending ratio of the encapsulating resin composition, the type of epoxy resin (A), the type of inorganic filler (C), the type of silane compound (E), the type of curing agent (B), the type of curing catalyst (D), the types of other components, or the manufacturing conditions of the encapsulating resin composition.

[0157] Next, the dielectric constant Dk1 at 1 GHz, measured by the following method 2a, will be described for the encapsulating resin composition of this embodiment.

[0158] From the viewpoint of further improving the low dielectric properties of the encapsulating resin composition, the dielectric constant Dk1 is preferably 3.75 or less, more preferably 3.74 or less, and even more preferably 3.73 or less. The lower limit of the dielectric constant Dk1 is not particularly limited, but may be 3.50 or higher, 3.51 or higher, 3.52 or higher, 3.53 or higher, 3.54 or higher, or 3.55 or higher. From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the dielectric constant Dk1 is preferably 3.50 or more and 3.75 or less, more preferably 3.51 or more and 3.74 or less, even more preferably 3.52 or more and 3.73 or less, even more preferably 3.53 or more and 3.73 or less, even more preferably 3.54 or more and 3.73 or less, and even more preferably 3.55 or more and 3.73 or less.

[0159] (Method 2a) The dielectric constant Dk1 at 1 GHz is measured under the same conditions as in (Method 2), except that the measurement frequency is changed from 10 GHz to 1 GHz. Here, the method for measuring the dielectric constant Dk1 of the sealing resin composition in this embodiment can be, more specifically, the method described in the example.

[0160] The dielectric constant Dk1 is, for example, the dielectric constant Dk 10 It can be adjusted using the same method as the adjustment method for [another method].

[0161] Next, the dielectric constant Dk5 at 5 GHz, measured by the following method 2b, will be described for the sealing resin composition of this embodiment.

[0162] From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the dielectric constant Dk5 is preferably 3.68 or less, more preferably 3.67 or less, even more preferably 3.66 or less, even more preferably 3.65 or less, and even more preferably 3.64 or less. The lower limit of the dielectric constant Dk5 is not particularly limited, but may be 3.50 or higher, 3.51 or higher, 3.52 or higher, 3.53 or higher, 3.54 or higher, or 3.55 or higher. From the viewpoint of further improving the low dielectric properties of the sealing resin composition, the dielectric constant Dk5 is preferably 3.50 or more and 3.68 or less, more preferably 3.51 or more and 3.67 or less, even more preferably 3.52 or more and 3.66 or less, even more preferably 3.53 or more and 3.65 or less, even more preferably 3.54 or more and 3.64 or less.

[0163] (Method 2b) The dielectric constant Dk5 at 5 GHz was measured under the same conditions as in (Method 2), except that the measurement frequency was changed from 10 GHz to 5 GHz. Here, the method for measuring the dielectric constant Dk5 of the sealing resin composition in this embodiment can be, more specifically, the method described in the example.

[0164] Dielectric constant Dk5 is, for example, dielectric constant Dk 10 It can be adjusted using the same method as the adjustment method for [another method].

[0165] <Flexural modulus> The flexural modulus M1 at 25°C, measured by method 3 below, will be explained for the sealing resin composition of this embodiment.

[0166] The flexural modulus M1 is preferably 24,000 MPa or less, more preferably 23,500 MPa or less, even more preferably 23,000 MPa or less, even more preferably 22,500 MPa or less, and even more preferably 22,000 MPa or less, from the viewpoint of improving the moldability of the sealing resin composition. The lower limit of the flexural modulus M1 is not particularly limited, but may be, for example, 10,000 MPa or more, 12,000 MPa or more, 14,000 MPa or more, 16,000 MPa or more, 18,000 MPa or more, or 20,000 MPa or more. From the viewpoint of improving the moldability of the sealing resin composition, the flexural modulus M1 is preferably 10,000 MPa to 24,000 MPa, more preferably 12,000 MPa to 23,500 MPa, even more preferably 14,000 MPa to 23,000 MPa, even more preferably 16,000 MPa to 22,500 MPa, even more preferably 18,000 MPa to 22,000 MPa, and even more preferably 20,000 MPa to 22,000 MPa.

[0167] (Method 3) Using a low-pressure transfer molding machine, the sealing resin composition was injected and molded under the conditions of a mold temperature of 175°C, injection pressure of 9.8 MPa, and curing time of 120 seconds to produce a molded product with a length of 80 mm, a width of 10 mm, and a thickness of 4 mm. Next, the molded product was heat-treated at a temperature of 175°C for 4 hours as a post-curing treatment to obtain a test specimen. Then, the flexural modulus M1 was measured under the conditions of an ambient temperature of 25°C in accordance with JIS K 6911:2006. Here, the method for measuring the flexural modulus M1 of the sealing resin composition in this embodiment can be, more specifically, the method described in the example.

[0168] The flexural modulus M1 can be adjusted, for example, by adjusting the content of epoxy resin (A), inorganic filler (C), silane compound (E), curing agent (B), curing catalyst (D), the blending ratio of the encapsulating resin composition, the type of epoxy resin (A), the type of inorganic filler (C), the type of silane compound (E), the type of curing agent (B), the type of curing catalyst (D), the types of other components, or the manufacturing conditions of the encapsulating resin composition.

[0169] The flexural modulus M2 at 260°C, measured by the following method 3a, will be explained for the sealing resin composition of this embodiment.

[0170] From the viewpoint of improving the stress resistance of the sealing resin composition, the flexural modulus M2 is preferably 1,000 MPa or less, more preferably 900 MPa or less, even more preferably 800 MPa or less, even more preferably 700 MPa or less, and even more preferably 650 MPa or less. The lower limit of the flexural modulus M2 is not particularly limited, but it may be, for example, 100 MPa or more, 300 MPa or more, 500 MPa or more, 550 MPa or more, or 600 MPa or more. From the viewpoint of improving the stress resistance of the sealing resin composition, the flexural modulus M2 is preferably 100 MPa to 1,000 MPa, more preferably 300 MPa to 900 MPa, even more preferably 500 MPa to 800 MPa, even more preferably 550 MPa to 700 MPa, and even more preferably 600 MPa to 650 MPa.

[0171] (Method 3a) The bending modulus M2 at 260°C was measured under the same conditions as in (Method 3), except that the ambient temperature was changed from 25°C to 260°C. Here, the method for measuring the flexural modulus M2 of the sealing resin composition in this embodiment can be more specifically the method described in the example.

[0172] The flexural modulus M2 can be adjusted, for example, by the same method as the method for adjusting the flexural modulus M1.

[0173] <Bending strength> The flexural strength S1 at 25°C, measured by the following method 4, for the sealing resin composition of this embodiment will be explained.

[0174] From the viewpoint of improving the moldability of the sealing resin composition, the bending strength S1 is preferably 100 MPa or more, more preferably 105 MPa or more, even more preferably 110 MPa or more, even more preferably 115 MPa or more, and even more preferably 120 MPa or more. There is no particular upper limit to the bending strength S1, but it may be, for example, 140 MPa or less, 135 MPa or less, or 130 MPa or less. From the viewpoint of improving the moldability of the sealing resin composition, the bending strength S1 is preferably 100 MPa to 140 MPa, more preferably 105 MPa to 140 MPa, even more preferably 110 MPa to 140 MPa, even more preferably 115 MPa to 135 MPa, and even more preferably 120 MPa to 130 MPa.

[0175] (Method 4) Using a low-pressure transfer molding machine, the sealing resin composition was injected and molded under the conditions of a mold temperature of 175°C, injection pressure of 9.8 MPa, and curing time of 120 seconds to produce a molded product with a length of 80 mm, a width of 10 mm, and a thickness of 4 mm. Next, the molded product was heat-treated at a temperature of 175°C for 4 hours as a post-curing treatment to obtain a test specimen. Then, the bending strength S1 was measured under the conditions of an ambient temperature of 25°C in accordance with JIS K 6911:2006. Here, the method for measuring the flexural strength S1 of the sealing resin composition in this embodiment can be more specifically the method described in the example.

[0176] The bending strength S1 can be adjusted, for example, by adjusting the content of epoxy resin (A), inorganic filler (C), silane compound (E), curing agent (B), curing catalyst (D), the blending ratio of the encapsulating resin composition, the type of epoxy resin (A), the type of inorganic filler (C), the type of silane compound (E), the type of curing agent (B), the type of curing catalyst (D), the types of other components, or the manufacturing conditions of the encapsulating resin composition.

[0177] The flexural strength S2 at 260°C, measured by the following method 4a, for the sealing resin composition of this embodiment will be explained.

[0178] From the viewpoint of improving the stress resistance of the sealing resin composition, the bending strength S2 is preferably 1 MPa or more, more preferably 3 MPa or more, even more preferably 5 MPa or more, even more preferably 6 MPa or more, even more preferably 7 MPa or more, even more preferably 8 MPa or more, and even more preferably 9 MPa or more. There is no particular upper limit to the bending strength S2, but it may be, for example, 100 MPa or less, 80 MPa or less, 60 MPa or less, 40 MPa or less, 30 MPa or less, or 20 MPa or less. From the viewpoint of improving the stress resistance of the sealing resin composition, the bending strength S2 is preferably 1 MPa to 100 MPa, more preferably 3 MPa to 80 MPa, even more preferably 5 MPa to 60 MPa, even more preferably 6 MPa or more, even more preferably 7 MPa to 40 MPa, even more preferably 8 MPa to 30 MPa, and even more preferably 9 MPa to 20 MPa.

[0179] (Method 4a) The bending strength S2 at 260°C was measured under the same conditions as in (Method 4), except that the ambient temperature was changed from 25°C to 260°C. Here, the method for measuring the flexural strength S2 of the sealing resin composition in this embodiment can be more specifically the method described in the example.

[0180] The bending strength S2 can be adjusted by, for example, the same method as the method for adjusting the bending strength S1.

[0181] <Spiral flow> The spiral flow measured by the following method 5 for the resin composition for sealing of the present embodiment will be described.

[0182] From the viewpoint of improving the fluidity of the resin composition for sealing, the spiral flow is preferably 20 cm or more, more preferably 30 cm or more, still more preferably 40 cm or more, still more preferably 50 cm or more, still more preferably 60 cm or more, still more preferably 70 cm or more. The upper limit of the spiral flow is not particularly limited, and for example, it may be 150 cm or less, 130 cm or less, 110 cm or less, 100 cm or less, 90 cm or less. From the viewpoint of improving the fluidity of the resin composition for sealing, the spiral flow is preferably 20 cm or more and 150 cm or less, more preferably 30 cm or more and 130 cm or less, still more preferably 40 cm or more and 110 cm or less, still more preferably 50 cm or more and 100 cm or less, still more preferably 60 cm or more and 90 cm or less, still more preferably 70 cm or more and 90 cm or less.

[0183] (Method 5) Using a low-pressure transfer molding machine, the resin composition for sealing is injected into a mold for measuring spiral flow according to EMMI-1-66 under the conditions of a mold temperature of 175 °C, an injection pressure of 6.9 MPa, and a holding pressure time of 120 seconds. Then, the flow length of the resin composition for sealing in the mold is measured and taken as the spiral flow. Here, more specifically, the method described in the examples can be adopted as the method for measuring the spiral flow of the resin composition for sealing of the present embodiment.

[0184] The spiral flow can be adjusted, for example, by adjusting the content of epoxy resin (A), inorganic filler (C), silane compound (E), curing agent (B), curing catalyst (D), the blending ratio of the encapsulating resin composition, the type of epoxy resin (A), the type of inorganic filler (C), the type of silane compound (E), the type of curing agent (B), the type of curing catalyst (D), the types of other components, or the manufacturing conditions of the encapsulating resin composition.

[0185] <Geltime> The gel time measured by the following method 6 for the sealing resin composition of this embodiment will be explained.

[0186] From the viewpoint of improving the workability of the sealing resin composition, the gel time is preferably 10 seconds or more, more preferably 15 seconds or more, even more preferably 20 seconds or more, even more preferably 25 seconds or more, and even more preferably 30 seconds or more. There is no particular upper limit on the gel time, but it may be, for example, 100 seconds or less, 80 seconds or less, 60 seconds or less, 50 seconds or less, or 40 seconds or less. From the viewpoint of improving the workability of the sealing resin composition, the gel time is preferably 10 seconds to 100 seconds, more preferably 15 seconds to 80 seconds, even more preferably 20 seconds to 60 seconds, even more preferably 25 seconds to 50 seconds, and even more preferably 30 seconds to 40 seconds.

[0187] (Method 6) The sealing resin composition is melted on a hot plate heated to 175°C. Then, the time it takes for the molten sealing resin composition to harden while being kneaded with a spatula is measured and defined as the gel time. Here, the method for measuring the gel time of the sealing resin composition in this embodiment can be more specifically the method described in the examples.

[0188] The gel time can be adjusted, for example, by adjusting the content of epoxy resin (A), inorganic filler (C), silane compound (E), curing agent (B), curing catalyst (D), the blending ratio of the encapsulating resin composition, the type of epoxy resin (A), the type of inorganic filler (C), the type of silane compound (E), the type of curing agent (B), the type of curing catalyst (D), the types of other components, or the manufacturing conditions of the encapsulating resin composition.

[0189] [Uses of encapsulating resin compositions] A cured product can be produced by curing the encapsulating resin composition of this embodiment. The use of the cured product is not particularly limited, but it can be used, for example, to encapsulate electronic components such as semiconductor elements, substrates, coils, magnets, etc. In particular, the encapsulating resin composition of this embodiment has improved low dielectric properties and can therefore preferably be used for encapsulating electronic components.

[0190] [Electronic equipment] The electronic device of this embodiment comprises a substrate, electronic components mounted on at least one surface of the substrate, and a sealing material for sealing the electronic components, wherein the sealing material includes a cured product of the sealing resin composition of this embodiment. The sealing resin composition of this embodiment has improved low dielectric properties and can therefore be suitably used as a sealing material for the electronic device of this embodiment. The following describes an example of an electronic device according to this embodiment, manufactured using the sealing resin composition of this embodiment as a sealing material.

[0191] Figure 1 is a schematic cross-sectional view showing a double-sided sealed electronic device 100 according to this embodiment. The electronic device 100 of this embodiment comprises an electronic component 20, a bonding wire 40 connected to the electronic component 20, and a sealing material 50, the sealing material 50 being made of a cured product of the sealing resin composition of this embodiment.

[0192] More specifically, the electronic component 20 is fixed to a die pad 32 of the substrate 30 via a die attach material 10, and the electronic device 100 has outer leads 34 connected via bonding wires 40 from electrode pads (not shown) provided on the electronic component 20. The bonding wires 40 can be set considering the electronic component 20 used, but for example, an Au wire can be used.

[0193] Figure 2 is a schematic diagram showing the cross-sectional structure of an example of a single-sided sealed electronic device obtained by sealing an electronic component 401 mounted on a circuit board 408 using the sealing resin composition of this embodiment.

[0194] Specifically, an electronic component 401 is fixed to the circuit board 408 via a die attach material 402. The electrode pads 407 of the electronic component 401 and the electrode pads 407 on the circuit board 408 are connected by bonding wires 404. The side of the circuit board 408 on which the electronic component 401 is mounted is sealed by a sealing material 406 made of a cured resin composition of this embodiment. The electrode pads 407 on the circuit board 408 are internally bonded to solder balls 409 on the unsealed side of the circuit board 408.

[0195] [Manufacturing method for electronic devices] The method for manufacturing an electronic device according to this embodiment comprises a preparation step of preparing a structure comprising a substrate and an electronic component on at least one surface of the substrate, and a sealing step of sealing the electronic component using the sealing resin composition according to this embodiment. Because the sealing resin composition of this embodiment has improved low dielectric properties, it can be suitably used in the sealing step of the manufacturing method of the electronic device of this embodiment.

[0196] In the sealing process of this embodiment, the method used to mold the sealing resin composition of this embodiment is not particularly limited, but it is preferable to mold the sealing resin composition by transfer molding, compression molding, or injection molding. The encapsulation process of this embodiment is carried out by curing the encapsulating resin composition at a temperature of about 80°C to 200°C for about 10 minutes to about 10 hours.

[0197] In the manufacturing method of the electronic device of this embodiment, the structure has a plurality of electronic components on at least one surface of the substrate, and the encapsulation process may be one that encapsulates the plurality of electronic components in a batch. In this case, the manufacturing method of the electronic device of this embodiment preferably further includes a singulation process of cutting the encapsulated structure into individual pieces for each electronic component. As an example of such a manufacturing method of an electronic device, hereinafter, a manufacturing method of an electronic device called the Wafer Level Package (WLP) method according to this embodiment will be described together with FIG. 3.

[0198] First, as a preparation process, for example, as shown in FIG. 3(a), a plurality of electronic components (not shown) are arranged on a base material 510 such as a wafer. Thereby, a circuit surface 520 is formed. Next, for example, as shown in FIG. 3(b), on the circuit surface 520, bumps 530 such as metal posts are formed in order to electrically connect the solder balls 550 and the electronic components. Next, as an encapsulation process, for example, as shown in FIG. 3(c), it is encapsulated using an encapsulating resin composition so as to cover the above-mentioned circuit surface 520, and an encapsulant layer 540 is formed. Next, for example, as shown in FIG. 3(d), by scraping the encapsulant layer 540, the bumps 530 are exposed from the encapsulant layer 540. When forming the encapsulant layer 540, when the encapsulant layer 540 is formed so that the bumps 530 are exposed as shown in FIG. 3(d), the encapsulant layer 540 may not be scraped. Next, for example, as shown in FIG. 3(e), solder balls 550 are connected to the bumps 530. Next, as a singulation process, for example, as shown in FIG. 3(f), the encapsulant layer 540 and the base material 510 are cut with a dicing blade, laser, etc., to obtain an electronic device 600 (for example, a semiconductor device). The number of bumps 530 and solder balls 550 connected to the electronic device 600 to be singulated is not limited and can be set according to the type of the electronic device 600.

[0199] Examples of electronic components to be encapsulated include, but are not limited to, semiconductor elements such as integrated circuits, large-scale integrated circuits, transistors, thyristors, diodes, or solid-state image sensors. Examples of the resulting electronic devices include, but are not limited to, dual in-line packages (DIP), plastic-leaded chip carriers (PLCC), quad-flat packages (QFP), low-profile quad-flat packages (LQFP), small outline packages (SOP), small outline J-lead packages (SOJ), thin small outline packages (TSOP), thin quad-flat packages (TQFP), tape carrier packages (TCP), ball grid arrays (BGA), or chip-size packages (CSP).

[0200] The embodiments of the present invention have been described above, but these are merely examples, and various other configurations can also be adopted. Furthermore, the present invention is not limited to the embodiments described above, and any modifications, improvements, etc., that do not impair the effects of the present invention are included in the present invention. [Examples]

[0201] This embodiment will be described in detail below with reference to examples and other relevant information. However, this embodiment is not limited in any way to the descriptions of these examples.

[0202] First, the materials used to prepare the encapsulating resin compositions for each example are shown.

[0203] (Epoxy resin (A)) • Epoxy resin 1: Biphenylene skeleton-containing phenol aralkyl type epoxy resin (NC3000L, manufactured by Nippon Kayaku Co., Ltd.) (Hardening agent (B)) • Hardener 1: Biphenylene skeleton-containing phenol aralkyl type hardener (MEH-7851SS, manufactured by Meiwa Kasei Co., Ltd.) • Hardener 2: Active ester-type hardener (EXB-8, manufactured by DIC Corporation) (Inorganic filler (C)) • Inorganic filler 1: Molten spherical silica (average particle size 9.0 μm) • Inorganic filler 2: Molten spherical silica (average particle size 0.5 μm) (Curing catalyst (D)) • Curing catalyst 1: Tetraphenylphosphonium bis(naphthalene-2,3-dioxy)phenyl silicate (Silane compound (E)) • Silane compound 1: A silane compound having a polybutadiene skeleton and a polystyrene skeleton (X-12-1281C, manufactured by Shin-Etsu Chemical Co., Ltd.) It had repeating units (r1), (r2), (r3), (r5), and (r6). • Silane compound 2: Silane compound having a polybutadiene skeleton (X-12-1267B, manufactured by Shin-Etsu Chemical Co., Ltd.) It had repeating units (r1), (r5), and (r6). The number-average molecular weight (polystyrene equivalent) was 6,000. • Silane compound 3: A silane compound having a polybutadiene skeleton and epoxy groups (X-12-1301C, manufactured by Shin-Etsu Chemical Co., Ltd.) It had repeating units (r1), (r4), (r5), and (r6). The number-average molecular weight (polystyrene equivalent) was 6,000. (Coupling agent (F)) • Coupling agent 1: N-phenyl-3-aminopropyltrimethoxysilane • Coupling agent 2:3-mercaptopropyltrimethoxysilane

[0204] (Coloring agent) • Carbon Black 1: Carbon Black (Release agent) • Release agent 1: Polyethylene oxide wax (Ion scavenger) • Ion scavenger 1: Magnesium-aluminum compound (Stress-reducing agent) • Low-stress agent 1: Carboxylate-terminated butadiene / acrylonitrile copolymer (manufactured by UBE Corporation, CTBN1008SP)

[0205] (Examples 1-3, Comparative Example 1) The encapsulating resin compositions for each example were prepared using the following procedure. The components listed in Table 1 were mixed in the specified proportions to obtain the mixture. The mixing was performed at room temperature using a Henschel mixer. The mixture was then heated and kneaded at 70-100°C to obtain a kneaded product. The obtained kneaded product was cooled and then pulverized to obtain a resin composition.

[0206] Next, the physical properties of the encapsulating resin compositions for each example were measured using the following method. The results are shown in Table 1.

[0207] <Measurement of dielectric loss tangent> • Dielectric loss tangent Df at 10 GHz 10 For each example of the sealing resin composition, the dielectric loss tangent Df at 10 GHz was determined by the following (Method 1). 10 We measured it. (Method 1) Each example of the sealing resin composition was molded under the conditions of a mold temperature of 175°C, injection pressure of 10 MPa, and curing time of 120 seconds to produce cured products with a length of 100 mm, a width of 3.8 mm, and a thickness of 0.8 mm. Next, each cured product was stored for 24 hours in a room at 23°C and 50% humidity after oven drying, in accordance with JIS C 6481:1996. Subsequently, the dielectric loss tangent Df at 10 GHz was measured using each cured product at a temperature of 23°C. 10 We measured it.

[0208] • Dielectric loss tangent Df1 at 1GHz For each example of the encapsulating resin composition, the dielectric loss tangent Df1 at 1 GHz was measured using the following method (Method 1a). (Method 1a) The dielectric loss tangent Df1 at 1 GHz was measured under the same conditions as in (Method 1), except that the measurement frequency was changed from 10 GHz to 1 GHz.

[0209] • Dielectric loss tangent Df5 at 5GHz For each example of the encapsulating resin composition, the dielectric loss tangent Df5 at 5 GHz was measured using the following method (Method 1b). (Method 1b) The dielectric loss tangent Df5 at 5 GHz was measured under the same conditions as in (Method 1), except that the measurement frequency was changed from 10 GHz to 5 GHz.

[0210] <Measurement of dielectric constant> • Dielectric constant Dk at 10 GHz 10 For each example of the sealing resin composition, the dielectric constant Dk at 10 GHz was determined by the following (Method 2). 10 We measured it. (Method 2) Each example of the sealing resin composition was molded under the conditions of a mold temperature of 175°C, injection pressure of 10 MPa, and curing time of 120 seconds to produce cured products with a length of 100 mm, a width of 3.8 mm, and a thickness of 0.8 mm. Next, each cured product was stored for 24 hours in a room at 23°C and 50% humidity after oven drying, in accordance with JIS C 6481:1996. Subsequently, the dielectric constant Dk at 10 GHz was measured using each cured product at a temperature of 23°C. 10 We measured it.

[0211] • Dielectric constant Dk1 at 1GHz For each example of the encapsulating resin composition, the dielectric constant Dk1 at 1 GHz was measured using the following method (Method 2a). (Method 2a) The dielectric constant Dk1 at 1 GHz was measured under the same conditions as in (Method 2), except that the measurement frequency was changed from 10 GHz to 1 GHz.

[0212] • Dielectric constant Dk5 at 5GHz For each example of the encapsulating resin composition, the dielectric constant Dk5 at 5 GHz was measured using the following method (Method 2b). (Method 2b) The dielectric constant Dk5 at 5 GHz was measured under the same conditions as in (Method 2), except that the measurement frequency was changed from 10 GHz to 5 GHz.

[0213] <Measurement of flexural modulus> • Flexural modulus M1 at 25℃ For each example of the sealing resin composition, the flexural modulus M1 at 25°C was measured using the following method (Method 3). (Method 3) Using a low-pressure transfer molding machine (KTS-15, manufactured by Kotaki Seiki Co., Ltd.), each example of the sealing resin composition was injection molded under the conditions of a mold temperature of 175°C, injection pressure of 9.8 MPa, and curing time of 120 seconds to produce molded products with a length of 80 mm, a width of 10 mm, and a thickness of 4 mm. Next, each example of the molded product was heat-treated at a temperature of 175°C for 4 hours as a post-curing test specimen. Then, the flexural modulus M1 was measured using each example's test specimen under the conditions of an ambient temperature of 25°C in accordance with JIS K 6911:2006.

[0214] • Flexural modulus M2 at 260℃ For each example of the sealing resin composition, the flexural modulus M2 at 260°C was measured using the following method (3a). (Method 3a) The bending modulus M2 at 260°C was measured under the same conditions as in (Method 3), except that the ambient temperature was changed from 25°C to 260°C.

[0215] <Measurement of bending strength> • Bending strength S1 at 25℃ For each example of the sealing resin composition, the bending strength S1 at 25°C was measured using the following method (Method 4). (Method 4) Using a low-pressure transfer molding machine (KTS-15, manufactured by Kotaki Seiki Co., Ltd.), each example of the sealing resin composition was injection molded under the conditions of a mold temperature of 175°C, injection pressure of 9.8 MPa, and curing time of 120 seconds to produce molded products with a length of 80 mm, a width of 10 mm, and a thickness of 4 mm. Next, each example of the molded product was heat-treated at a temperature of 175°C for 4 hours as a post-curing test specimen. Then, the bending strength S1 of each example's test specimen was measured under the conditions of an ambient temperature of 25°C in accordance with JIS K 6911:2006.

[0216] Bending strength S2 at 260℃ For each example of the sealing resin composition, the bending strength S2 at 260°C was measured by the following (Method 4a). (Method 4a) The bending strength S2 at 260°C was measured under the same conditions as in (Method 4), except that the ambient temperature was changed from 25°C to 260°C.

[0217] <Measurement of spiral flow> For each example of the sealing resin composition, the spiral flow was measured using the following method (5). (Method 5) Using a low-pressure transfer molding machine (KTS-15, manufactured by Kotaki Seiki Co., Ltd.), each example of the sealing resin composition was injected into a mold for spiral flow measurement in accordance with EMMI-1-66 under the conditions of a mold temperature of 175°C, injection pressure of 6.9 MPa, and holding pressure time of 120 seconds. Subsequently, the flow length of each example of the sealing resin composition in the mold was measured and defined as the spiral flow.

[0218] <Measuring gel time> For each example of the sealing resin composition, the gel time was measured according to (Method 6) below. (Method 6) The gel time of the resin compositions obtained in each example was measured. Gel time was measured by melting the resin composition on a hot plate heated to 175°C and then measuring the time (gel time: seconds) until it hardened while being kneaded with a spatula. For each example of the sealing resin composition, the above measurements were performed with N=5, and the average value was defined as the gel time.

[0219] [Table 1] [Explanation of Symbols]

[0220] 10. Die Touch material 20 Electronic Components 30 Base material 32 die pads 34 Outer lead 40 Bonding Wires 50 Sealing material 100 Electronic equipment 401 Electronic Components 402 Die Attach Material 404 Bonding Wire 406 Sealing material 407 Electrode Pads 408 Circuit Board 409 Solder ball 510 Base material 520 Circuit surface 530 Bump 540 Encapsulant layer 550 Solder Balls 600 Electronic equipment

Claims

1. Epoxy resin (A) and Inorganic filler (C) and, It contains a silane compound (E), The silane compound (E) is a encapsulating resin composition having repeating units (r1) having a polybutadiene skeleton.

2. The sealing resin composition according to claim 1, wherein the repeating unit (r1) includes a repeating unit represented by the following formula (R1). 【Chemistry 1】 (In the above formula (R1), R 1 Each of these independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, R 2 Each of these independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, and p represents an integer between 1 and 1,000.

3. The sealing resin composition according to claim 1 or 2, wherein the content of the silane compound (E) is 0.01% by mass or more and 10% by mass or less when the total amount of the sealing resin composition (excluding the solvent) is 100% by mass.

4. The encapsulating resin composition according to claim 1 or 2, wherein the number average molecular weight (polystyrene equivalent) of the silane compound (E) is 500 or more and 50,000 or less.

5. The silane compound (E) further comprises a repeating unit (r2) having an aromatic ring, The sealing resin composition according to claim 1 or 2, wherein the repeating unit (r2) includes a repeating unit represented by the following formula (R2). 【Chemistry 2】 (In the above formula (R2), R 3 ~R 4 Each of these independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, R 5 Each of these independently represents a direct bond or a hydrocarbon group having 1 to 4 carbon atoms, R 6 Each of these independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, R 6 If R is a hydrocarbon group with 1 to 4 carbon atoms, 6 (One or more atoms may be bonded to the benzene ring, and q is an integer between 1 and 1,000.)

6. The silane compound (E) further has repeating units (r3) having carbon-carbon double bonds, The sealing resin composition according to claim 1 or 2, wherein the repeating unit (r3) includes a repeating unit represented by the following formula (R3). 【Transformation 3】 (In the above formula (R3), R 7 to R 10 each independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, and r represents an integer between 1 and 1,000.)

7. The silane compound (E) further comprises a repeating unit (r4) having a cyclic ether structure, The sealing resin composition according to claim 1 or 2, wherein the repeating unit (r4) includes a repeating unit represented by the following formula (R4). 【Chemistry 4】 (In the above formula (R4), R 11 ~R 12 Each of these independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, R 13 Each of these independently represents a direct bond or a hydrocarbon group having 1 to 4 carbon atoms, R 14 ~R 15 Each of these independently represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, and s represents an integer between 1 and 1,000.

8. The encapsulating resin composition according to claim 1 or 2, wherein the inorganic filler (C) comprises one or more selected from the group consisting of silica, alumina, calcium titanate, and titanium oxide.

9. The dielectric loss tangent Df at 10 GHz is measured by Method 1 below. 10 The sealing resin composition according to claim 1 or 2, wherein the coefficient is 0.0060 or less. (Method 1) The sealing resin composition was molded under the conditions of a mold temperature of 175°C, an injection pressure of 10 MPa, and a curing time of 120 seconds to produce a cured product with a length of 100 mm, a width of 3.8 mm, and a thickness of 0.8 mm. Then, the cured product was stored in a room at 23°C and 50% humidity for 24 hours in accordance with JIS C 6481:1996, and after being completely dried, the dielectric loss tangent Df at 10 GHz was measured at a temperature of 23°C. 10 Measure.

10. The dielectric constant Dk at 10 GHz, as measured by Method 2 below. 10 The encapsulating resin composition according to claim 1 or 2, wherein the coefficient is 3.66 or less. (Method 2) The sealing resin composition was molded under the conditions of a mold temperature of 175°C, an injection pressure of 10 MPa, and a curing time of 120 seconds to produce a cured product with a length of 100 mm, a width of 3.8 mm, and a thickness of 0.8 mm. Then, the cured product was stored in a room at 23°C and 50% humidity for 24 hours in accordance with JIS C 6481:1996, and after being completely dried, the dielectric constant Dk at 10 GHz was determined at a temperature of 23°C. 10 Measure.

11. The flexural modulus M at 25°C is measured by method 3 below. 1 The sealing resin composition according to claim 1 or 2, wherein the pressure is 24,000 MPa or less. (Method 3) Using a low-pressure transfer molding machine, the sealing resin composition was injected and molded under the conditions of a mold temperature of 175°C, an injection pressure of 9.8 MPa, and a curing time of 120 seconds to produce a molded product with a length of 80 mm, a width of 10 mm, and a thickness of 4 mm. Then, the molded product was heat-treated as a post-curing test piece at a temperature of 175°C for 4 hours to obtain a test piece. Subsequently, the flexural modulus M was determined under the conditions of an ambient temperature of 25°C in accordance with JIS K 6911:2006. 1 Measure.

12. The encapsulating resin composition according to claim 1 or 2, which can be used for encapsulating electronic components.

13. circuit board and An electronic component mounted on at least one surface of the aforementioned substrate, The electronic component comprises a sealing material for sealing the aforementioned electronic component, The sealing material comprises a cured product of the sealing resin composition described in claim 1 or 2 in an electronic device.

Citation Information

Patent Citations

  • Resin composition, and heat-conductive sheet

    JP2022110408A