Substrate processing method and substrate processing apparatus

Abstract

The present invention provides a substrate processing method that can efficiently generate a processing solution containing component liquids and component gases on the upper surface of the substrate. [Solution] The substrate processing method includes a sealing step of sealing the gap between the blocking member 41 and the substrate holder 14, thereby forming a sealed space SP between the blocking member 41 and the substrate holder 14, which contains the substrate W held in the substrate holder 14, with the component liquid on the upper surface of the substrate W; and a pressurizing step of supplying a component gas that generates the processing liquid together with the component liquid to the sealed space SP, thereby raising the air pressure inside the sealed space SP to a value higher than the air pressure outside the sealed space SP, with the component liquid on the upper surface of the substrate W.

Description

Technical Field

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate. The substrate includes, for example, a semiconductor wafer, a substrate for a FPD (Flat Panel Display) such as a liquid crystal display device or an organic EL (electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.

Background Art

[0002] Patent Document 1 discloses processing a substrate with an aqueous sulfuric acid solution in which ozone is dissolved. Paragraph 0141 of Patent Document 1 states that "by supplying an ozone-containing gas into the processing chamber 12, the inside of the processing chamber 12 can be pressurized (pressure supply step). As a result, the pressure inside the processing chamber 12 becomes higher than the pressure outside the processing chamber 12."

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, Patent Document 1 does not disclose sealing the space containing the substrate by sealing the gap between the substrate holder and the blocking member. If the space containing the substrate is not sealed, the air pressure in the same space cannot be increased to a higher value.

[0005] At least one embodiment of the present invention provides a substrate processing method and a substrate processing apparatus capable of efficiently generating a processing liquid containing a component liquid and a component gas on the upper surface of a substrate.

Means for Solving the Problems

[0006] One embodiment of the present invention provides a substrate processing method comprising: a substrate holding step of holding a substrate horizontally in a substrate holder; a component liquid supply step of supplying a component liquid to the upper surface of the substrate held in the substrate holder; a sealing step of sealing the gap between a blocking member and the substrate holder to form a sealed space between the blocking member and the substrate holder containing the substrate held in the substrate holder, with the component liquid on the upper surface of the substrate; and a pressurizing step of supplying a component gas that generates a processing liquid together with the component liquid to the sealed space to raise the air pressure inside the sealed space to a value higher than the air pressure outside the sealed space, with the component liquid on the upper surface of the substrate.

[0007] In the above embodiment, at least one of the following features may be added to the substrate processing method.

[0008] The pressurization step includes a step of maintaining the air pressure inside the sealed space at a higher value than the air pressure outside the sealed space while the component gas is discharged from the sealed space and the component liquid is on the upper surface of the substrate.

[0009] The substrate holder includes a spin chuck that rotates the substrate while holding it horizontally with a plurality of chuck pins arranged around the substrate, and a hot plate that heats the substrate while holding it horizontally. The substrate processing method further includes a substrate transfer step of moving the substrate between the spin chuck and the hot plate by moving the spin chuck and the hot plate relative to each other. The component liquid supply step includes discharging the component liquid toward the upper surface of the substrate held by the spin chuck while rotating the substrate in the spin chuck. The pressurizing step includes heating the substrate while holding it on the hot plate, with the component liquid on the upper surface of the substrate and the air pressure inside the sealed space being higher than the air pressure outside the sealed space.

[0010] The sealing step includes sealing the gap between the blocking member and the hot plate, thereby forming a sealed space between the blocking member and the hot plate that houses the substrate held on the hot plate, with the component liquid on the upper surface of the substrate.

[0011] The pressurization step includes diffusing the component gas into the upper space, which is the space between the rectifier plate of the barrier member positioned above the substrate held in the substrate holder and the plate-shaped portion of the barrier member positioned above the rectifier plate, within the space inside the cylindrical portion of the barrier member surrounding the substrate held in the substrate holder with the sealed space formed. The step also includes supplying the component gas in the upper space to the lower space, which is the space inside the cylindrical portion of the barrier member below the rectifier plate, through a plurality of gas passages that penetrate the rectifier plate vertically.

[0012] The substrate processing method further includes a depressurization step of reducing the air pressure inside the sealed space by discharging the component gas from the sealed space, and a replacement gas supply step of supplying a replacement gas, which is a gas other than the component gas, to the sealed space after the air pressure inside the sealed space has decreased and the sealed space is filled with the component gas and the component gas has been discharged from the sealed space.

[0013] The substrate processing method further includes a pressurization preparation step of supplying the component gas to the space between the blocking member and the substrate holder while the gap between the blocking member and the substrate holder is not sealed, thereby discharging the gas in the space between the blocking member and the substrate holder through the gap.

[0014] The pressurization preparation step includes, while the gap between the blocking member and the substrate holder is not sealed and the component gas is supplied to the space between the blocking member and the substrate holder, the step of discharging the gas inside the guard through an exhaust duct located below the gap, while positioning the upper end of the guard surrounding the blocking member and the substrate holder in a plan view above the gap.

[0015] The substrate processing method further includes an organic solvent supply step of supplying the component gas to the sealed space, and then supplying a liquid organic solvent, which is more volatile than water, to the upper surface of the substrate held in the substrate holder; and a substrate drying step of, while the liquid organic solvent is on the upper surface of the substrate, discharging gas from the sealed space to lower the air pressure inside the sealed space, thereby evaporating the liquid organic solvent on the upper surface of the substrate until the upper surface of the substrate is dry.

[0016] The sealing step is a step of sealing the gap between the blocking member and the substrate holder within a chamber housing the blocking member and the substrate holder, thereby forming a sealed space between the blocking member and the substrate holder that houses the substrate held in the substrate holder, with the component liquid on the upper surface of the substrate.

[0017] Another embodiment of the present invention provides a substrate processing apparatus comprising: a substrate holder for holding a substrate horizontally; a component liquid nozzle for discharging a component liquid toward the upper surface of the substrate held by the substrate holder; a relative movement actuator that reduces the distance between the blocking member and the substrate holder, thereby sealing the gap between the blocking member and the substrate holder, and thereby forming a sealed space between the blocking member and the substrate holder containing the substrate held by the substrate holder while the component liquid is on the upper surface of the substrate; and a component gas piping that supplies a component gas that generates a processing liquid together with the component liquid to the sealed space, thereby raising the air pressure inside the sealed space to a value higher than the air pressure outside the sealed space while the component liquid is on the upper surface of the substrate.

[0018] In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

[0019] The substrate processing apparatus further includes an exhaust pipe for sucking gas from the space between the blocking member and the substrate holder, and the component gas piping continues to supply the component gas to the sealed space when the exhaust pipe is discharging gas from the sealed space, thereby maintaining the air pressure inside the sealed space at a higher value than the air pressure outside the sealed space while the component liquid is on the upper surface of the substrate.

[0020] The substrate holder includes a spin chuck that rotates the substrate while holding it horizontally with a plurality of chuck pins arranged around the substrate, and a hot plate that heats the substrate while holding it horizontally. The substrate processing apparatus further includes a transfer actuator that moves the substrate between the spin chuck and the hot plate by moving the spin chuck and the hot plate relative to each other. The component liquid nozzle discharges the component liquid toward the upper surface of the substrate held by the spin chuck when the spin chuck is rotating the substrate, and the hot plate heats the substrate while holding it, with the component liquid on the upper surface of the substrate and the air pressure inside the sealed space being higher than the air pressure outside the sealed space.

[0021] The relative movement actuator seals the gap between the blocking member and the hot plate, thereby forming a sealed space between the blocking member and the hot plate that houses the substrate held by the hot plate while the component liquid is on the upper surface of the substrate.

[0022] The blocking member includes a cylindrical portion surrounding the substrate held by the substrate holder in a state where the sealed space is formed, a rectifying plate disposed above the substrate held by the substrate holder, a plate-like portion disposed above the rectifying plate, and a gas supply port that supplies the component gas to an upper space that is a portion between the rectifying plate and the plate-like portion in the space inside the cylindrical portion, and supplies the component gas in the upper space to a lower space that is a portion below the rectifying plate in the space inside the cylindrical portion through a plurality of gas passages penetrating the rectifying plate vertically.

[0023] The substrate processing apparatus further includes an exhaust pipe that reduces the air pressure in the sealed space by discharging the component gas from the sealed space, and a replacement gas pipe that supplies a replacement gas, which is a gas other than the component gas, to the sealed space after the air pressure in the sealed space has decreased and while the sealed space is filled with the component gas and the exhaust pipe is discharging the component gas from the sealed space.

[0024] The substrate processing apparatus further includes a component gas valve that switches between an open state allowing the component gas flowing in the component gas pipe to pass through and a closed state stopping the component gas flowing in the component gas pipe, and a control device that seals the gap by supplying the component gas to the space between the blocking member and the substrate holder in a state where the gap between the blocking member and the substrate holder is not sealed, discharging the gas in the space between the blocking member and the substrate holder through the gap, and then causing the relative movement actuator to seal the gap.

[0025] The substrate processing apparatus further includes a guard including an upper end surrounding the blocking member and the substrate holder in plan view, a guard lifting actuator that positions the upper end of the guard above the gap when supplying the component gas to the space between the blocking member and the substrate holder in a state where the gap between the blocking member and the substrate holder is not sealed, and an exhaust duct that is disposed below the gap and discharges the gas inside the guard.

[0026] After supplying the component gas to the sealed space, the substrate processing apparatus includes an organic solvent nozzle that discharges a liquid of an organic solvent having a higher volatility than water toward the upper surface of the substrate held by the substrate holder, and, with the liquid of the organic solvent on the upper surface of the substrate, exhausts gas from the sealed space to reduce the air pressure in the sealed space, thereby evaporating the liquid of the organic solvent on the upper surface of the substrate until the upper surface of the substrate dries. The substrate processing apparatus further includes an exhaust pipe.

[0027] The substrate processing apparatus further includes a chamber that houses the blocking member and the substrate holder.

Brief Description of the Drawings

[0028] [Figure 1A] It is a schematic plan view showing the layout of a substrate processing apparatus according to an embodiment. [Figure 1B] It is a schematic side view of a substrate processing apparatus. [Figure 2] It is a schematic view of the inside of a processing unit seen horizontally. [Figure 3] It is a schematic view of the inside of a processing unit seen horizontally. [Figure 4] It is an enlarged view of a blocking member and a hot plate showing a state where the gap between the blocking member and the hot plate is sealed. [Figure 5A-C] It is a schematic view of a chuck pin. [Figure 6] It is a process chart for explaining an example of the processing of a substrate performed by a substrate processing apparatus. [Figure 7] It is a timing chart for explaining the flow from sealing the space housing the substrate to replacing the ozone gas in the same space with nitrogen gas in an example of the processing of the substrate shown in FIG. 6. [Figure 8] It is a schematic view of a blocking member and a hot plate according to another embodiment. [Figure 9] It is a schematic view of a blocking member and a hot plate according to still another embodiment. [Modes for carrying out the invention]

[0029] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0030] Figure 1A is a schematic plan view showing the layout of a substrate processing apparatus 1 according to one embodiment. Figure 1B is a schematic side view of the substrate processing apparatus 1.

[0031] As shown in Figure 1A, the substrate processing apparatus 1 is a single-wafer type apparatus that processes disc-shaped substrates W, such as semiconductor wafers, one at a time. The substrate processing apparatus 1 comprises a load port LP that holds a carrier CA that accommodates multiple substrates W, such as a Front-Opening Unified Pod (FOUP); a plurality of processing units 2 that process the substrates W transported from the carrier CA on the load port LP with a processing fluid such as a processing liquid or processing gas; a transport system TS that transports the substrates W between the carrier CA on the load port LP and the plurality of processing units 2; an outer wall 1a that forms a sealed space housing the plurality of processing units 2 and the transport system TS; and a control device 3 that controls the substrate processing apparatus 1.

[0032] Multiple processing units 2 form multiple towers TW. Figure 1A shows an example where four towers TW are formed. As shown in Figure 1B, the multiple processing units 2 contained in one tower TW are stacked vertically. As shown in Figure 1A, the multiple towers TW form two rows that extend in the depth direction (left-right direction in Figure 1A) of the substrate processing apparatus 1 in a plan view. In a plan view, the two rows face each other via a transport path TP.

[0033] The transport system TS includes an indexer robot IR that loads and unloads substrates W to and from a carrier CA on a load port LP, and a center robot CR that loads and unloads substrates W to and from multiple processing units 2. The center robot CR is located on the transport path TP. The indexer robot IR is located between the load port LP and the center robot CR in a plan view. The indexer robot IR passes the substrates W to the center robot CR and receives the substrates W from the center robot CR. The center robot CR does the same.

[0034] The indexer robot IR includes one or more hands Hi that horizontally support the substrate W. The hands Hi are movable in both the horizontal and vertical directions. The hands Hi are rotatable around a vertical line. The hands Hi can load and unload the substrate W to and from the carrier CA on any load port LP, and can transfer the substrate W to and from the center robot CR.

[0035] The center robot CR includes one or more hands Hc that horizontally support the substrate W. The hands Hc are movable in both the horizontal and vertical directions. The hands Hc are rotatable around a vertical line. The hands Hc can transfer the substrate W to and from the indexer robot IR, and can load and unload the substrate W to and from any of the processing units 2.

[0036] The control device 3 controls the electrical and electronic equipment provided in the substrate processing device 1. The control device 3 includes at least one computer that can communicate with each other. The computer includes a CPU (central processing unit) 3c that processes information such as program execution, and a memory 3m that stores information such as programs to be executed by the CPU 3c. The control device 3 controls the substrate processing device 1 to transport and process the substrate W, as described later. In other words, the control device 3 is programmed to transport and process the substrate W, as described later.

[0037] Next, we will describe the processing unit 2.

[0038] Figures 2 and 3 are schematic diagrams of the inside of the processing unit 2 viewed horizontally. Figure 2 shows the state in which the gap G1 (see Figure 8) between the shut-off member 41 and the hot plate 14 is sealed. Figure 3 shows the state in which the gap between the shut-off member 41 and the hot plate 14 is not sealed. Figure 4 is an enlarged view of the shut-off member 41 and the hot plate 14 showing the state in which the gap between the shut-off member 41 and the hot plate 14 is sealed.

[0039] As shown in Figure 2, the processing unit 2 includes a chamber 4 for housing the substrate W, and a spin chuck 10 that holds one substrate W horizontally within the chamber 4 and rotates it around a vertical axis of rotation A1 passing through the center of the substrate W.

[0040] Chamber 4 includes a box-shaped partition wall 5 with a passage opening through which the substrate W passes, and a door 6 that opens and closes the passage opening. The FFU 7 (Fan Filter Unit 7) is positioned above an air outlet located at the top of the partition wall 5. The FFU 7 constantly supplies clean air (air filtered by the filter) into Chamber 4 from the air outlet. The gas inside Chamber 4 is discharged from Chamber 4 through an exhaust duct 8 connected to the bottom of the processing cup 31. This constantly creates a downflow of clean air inside Chamber 4. The flow rate of the exhaust discharged into the exhaust duct 8 is changed according to the opening degree of the exhaust valve 9 located inside the exhaust duct 8.

[0041] The spin chuck 10 includes a horizontally held disc-shaped spin base 12, a plurality of chuck pins 11 that horizontally hold the substrate W above the spin base 12, and a spin motor 13 that rotates the spin base 12 and the plurality of chuck pins 11 around the rotation axis A1. Although the spin chuck 10 includes three or more chuck pins 11, Figure 2 is depicted as having only two chuck pins 11. This is also the case in Figure 3, etc.

[0042] The spin chuck 10 is not limited to a clamping-type chuck that contacts the end face of the substrate W with a plurality of chuck pins 11, but may also be a vacuum-type chuck that holds the substrate W horizontally by adhering the back surface (bottom surface) of the substrate W, which is a non-device forming surface, to the upper surface 12u (see Figure 3) of the spin base 12. If the spin chuck 10 is a clamping-type chuck, the plurality of chuck pins 11 correspond to the substrate holder.

[0043] The processing unit 2 includes a cylindrical processing cup 31 for receiving processing liquid scattered from the substrate W. The processing cup 31 includes a plurality of guards 34 for receiving processing liquid discharged outward from the substrate W held by the spin chuck 10, a plurality of cups 33 for receiving processing liquid guided downward by the plurality of guards 34, and a cylindrical outer wall 32 surrounding the plurality of guards 34 and the plurality of cups 33. Figure 2 shows an example in which two guards 34 and two cups 33 are provided, and the outer cup 33 is integrated with the inner guard 34.

[0044] The guard 34 includes a cylindrical portion 35 surrounding the spin chuck 10 and an annular ceiling portion 36 extending diagonally upward toward the rotation axis A1 from the upper end of the cylindrical portion 35. Multiple ceiling portions 36 are stacked vertically, and multiple cylindrical portions 35 are arranged concentrically. The annular upper end of the ceiling portion 36 corresponds to the upper end 34u of the guard 34 surrounding the substrate W and spin base 12 in a plan view (see Figure 3). Multiple cups 33 are each located below the multiple cylindrical portions 35. The cups 33 form annular grooves that receive the processing liquid guided downward by the guard 34.

[0045] The processing unit 2 includes a guard lifting actuator 34a that individually raises and lowers multiple guards 34. The guard lifting actuator 34a holds the guards 34 stationary at any position within the range from the upper position to the lower position. Figure 2 shows the outer guards 34 in the upper position and the inner guards 34 in the lower position. The upper position is the position where the upper end 34u of the guard 34 is positioned above the holding position where the substrate W held by the spin chuck 10 is placed. The lower position is the position where the upper end 34u of the guard 34 is positioned below the holding position.

[0046] An actuator is a device that converts driving energy, represented by electricity, fluid, magnetic, thermal, or chemical energy, into mechanical work, i.e., the motion of a tangible object. Actuators include electric motors (rotary motors), linear motors, air cylinders, and other devices. When the motion of the actuator differs from the motion of the object, a motion converter may be provided to convert the actuator's motion into linear motion or rotation. For example, if the actuator is an electric motor and the object is to move in a linear motion, a motion converter such as a ball screw and ball nut may be used to convert the rotation of the electric motor into linear motion.

[0047] The processing unit 2 includes a plurality of nozzles that discharge processing fluids such as processing liquid and processing gas toward the substrate W located above the spin chuck 10. The plurality of nozzles include a first chemical solution nozzle 21 that discharges a first chemical solution toward the upper surface of the substrate W located above the spin chuck 10, a second chemical solution nozzle 22 that discharges a second chemical solution toward the upper surface of the substrate W located above the spin chuck 10, and a rinsing liquid nozzle 23 that discharges a rinsing liquid toward the upper surface of the substrate W located above the spin chuck 10. Figure 2 shows an example in which the first chemical solution is sulfuric acid (H2SO4), the second chemical solution is SC1, and the rinsing liquid is pure water (DIW).

[0048] The first chemical nozzle 21 is connected to the first chemical pipe 21p that guides the first chemical. When the first chemical valve 21v attached to the first chemical pipe 21p is opened, the discharge port of the first chemical nozzle 21 continuously discharges the first chemical downwards. Similarly, the second chemical nozzle 22 is connected to the second chemical pipe 22p that guides the second chemical. When the second chemical valve 22v attached to the second chemical pipe 22p is opened, the discharge port of the second chemical nozzle 22 continuously discharges the second chemical downwards. The first chemical nozzle 21 is an example of a component liquid nozzle, and the first chemical valve 21v is an example of a component liquid valve. The first chemical is an example of a component liquid.

[0049] The first chemical solution may be a liquid containing at least one of sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, aqueous ammonia, aqueous hydrogen peroxide, organic acids (e.g., citric acid, oxalic acid, etc.), organic alkalis (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactants, and corrosion inhibitors, or it may be any other liquid. The same applies to the second chemical solution. The first chemical solution may have the same composition as the second chemical solution, but differ from the second chemical solution in at least one of its concentration and temperature.

[0050] Although not shown in the diagram, the first chemical solution valve 21v includes a valve body provided with an annular valve seat through which the chemical solution passes, a valve element movable relative to the valve seat, and an actuator that moves the valve element between a closed position where the valve element is in contact with the valve seat and an open position where the valve element is away from the valve seat. The same applies to the other valves. The actuator may be a pneumatic actuator or an electric actuator, or any other type of actuator. The control device 3 opens and closes the first chemical solution valve 21v, etc., by controlling the actuator.

[0051] The rinse liquid nozzle 23 is connected to the rinse liquid piping 23p that guides the rinse liquid. When the rinse liquid valve 23v attached to the rinse liquid piping 23p is opened, the outlet of the rinse liquid nozzle 23 continuously discharges the rinse liquid downwards. The rinse liquid may be any of the following: pure water (deionized water: DIW), carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, hydrochloric acid water at a dilution concentration (e.g., about 1 to 100 ppm), or ammonia water at a dilution concentration (e.g., about 1 to 100 ppm), or any other liquid.

[0052] The first chemical nozzle 21 may be a scanning nozzle that moves the collision position of the chemical solution with respect to the substrate W within the upper surface of the substrate W, or it may be a fixed nozzle that cannot move the collision position of the chemical solution with respect to the substrate W. The same applies to the other nozzles. Figure 3 shows an example in which the first chemical nozzle 21, the second chemical nozzle 22, and the rinse nozzle 23 are scanning nozzles.

[0053] As shown in Figure 3, the first chemical nozzle 21 is connected to a first nozzle actuator 21a that moves the first chemical nozzle 21 in at least one of the vertical and horizontal directions. The second chemical nozzle 22 is connected to a second nozzle actuator 22a that moves the second chemical nozzle 22 in at least one of the vertical and horizontal directions. The rinse liquid nozzle 23 is connected to a third nozzle actuator 23a that moves the rinse liquid nozzle 23 in at least one of the vertical and horizontal directions.

[0054] The first nozzle actuator 21a moves the first chemical nozzle 21 horizontally between a processing position where the chemical solution discharged from the first chemical nozzle 21 is supplied to the upper surface of the substrate W, and a standby position where the first chemical nozzle 21 is positioned around the processing cup 31 in a plan view. The same applies to the second nozzle actuator 22a and the third nozzle actuator 23a. Figure 3 shows the state in which the first chemical nozzle 21 is positioned at the processing position.

[0055] As shown in Figure 4, the processing unit 2 includes a hot plate 14, which is an example of a heater for heating the substrate W located above the spin chuck 10. The hot plate 14 is positioned between the substrate W and the spin base 12. The hot plate 14 includes a heating element 14h that generates Joule heat when energized, and an outer case that houses the heating element 14h. The heating element 14h and the outer case are positioned below the substrate W. The heating element 14h is connected to wiring (not shown) that supplies power to the heating element 14h. The temperature of the heating element 14h is changed by the control device 3. When the control device 3 causes the heating element 14h to heat up, the entire substrate W is heated uniformly.

[0056] The outer case of the hot plate 14 includes a disc-shaped base portion positioned below the substrate W, and a plurality of hemispherical protrusions projecting upward from the upper surface of the base portion. The upper surface of the base portion is parallel to the lower surface of the substrate W and has an outer diameter smaller than the diameter of the substrate W. The plurality of protrusions contact the lower surface of the substrate W at positions located above the upper surface of the base portion. The plurality of protrusions are positioned at multiple locations within the upper surface of the base portion so that the substrate W is supported horizontally. The substrate W is supported horizontally with its lower surface separated above the upper surface of the base portion.

[0057] As shown in Figure 3, the hot plate 14 is horizontally supported by a support shaft 14s extending downward from the center of the hot plate 14. Multiple chuck pins 11 are arranged around the hot plate 14. The center line of the hot plate 14 is aligned with the rotation axis A1 of the substrate W. The hot plate 14 does not rotate even when the spin chuck 10 rotates.

[0058] The hot plate 14 is movable vertically relative to the spin base 12. The hot plate 14 is connected to the lifting actuator 14a via a support shaft 14s. The lifting actuator 14a is an example of a transfer actuator. The lifting actuator 14a moves the hot plate 14 vertically up and down between an upper position (the position shown in Figure 4) and a lower position (the position shown in Figure 3). The upper position is the contact position where the hot plate 14 is in contact with the lower surface of the substrate W. The lower position is the proximity position where the hot plate 14 is separated from the substrate W and positioned between the lower surface of the substrate W and the upper surface 12u of the spin base 12.

[0059] The hot plate 14 is an example of a substrate holder. The lifting actuator 14a holds the hot plate 14 stationary at any position within the range from the upper position to the lower position. When the hot plate 14 rises to the upper position while the substrate W is supported by a plurality of chuck pins 11 and the substrate W is released from being held, the substrate W is lifted by the hot plate 14 and moves upward away from the plurality of chuck pins 11. In this state, when the hot plate 14 lowers to the lower position, the substrate W on the hot plate 14 is placed on the plurality of chuck pins 11, and the hot plate 14 moves downward away from the substrate W.

[0060] The processing unit 2 includes a blocking member 41 positioned above the spin chuck 10. The blocking member 41 is located inside the chamber 4. The blocking member 41 includes a horizontally held plate-shaped portion 41p and a cylindrical portion 41t extending downward from the outer circumference of the plate-shaped portion 41p. The plate-shaped portion 41p is also called a blocking plate. The lower surface of the plate-shaped portion 41p corresponds to the lower surface of the blocking member 41. The center of the plate-shaped portion 41p is located on the rotation axis A1 of the substrate W. The inner diameter of the cylindrical portion 41t is smaller than the outer diameter of the spin base 12. The outer diameter of the cylindrical portion 41t is smaller than the inner diameter of the upper end 34u of the guard 34.

[0061] The blocking member 41 is connected to a lifting actuator 41a that moves the blocking member 41 vertically. The lifting actuator 41a is an example of a relative movement actuator. The lifting actuator 41a can hold the blocking member 41 stationary at any position within the range from the upper position (the position shown in Figure 3) to the lower position (the position shown in Figure 4). The upper position is a standby position in which the blocking member 41 is retracted to a height that allows the scan nozzle to enter between the blocking member 41 and the substrate W when the substrate W is held by the multiple chuck pins 11. The lower position is a sealed position in which the gap between the lower surface of the cylindrical portion 41t of the blocking member 41 and the upper surface of the hot plate 14 is sealed when the hot plate 14 is positioned in the upper position.

[0062] As shown in Figure 4, the upper surface of the hot plate 14 includes a circular inner portion 14i that faces the substrate W vertically, and an annular outer portion 14o that surrounds the inner portion 14i. The substrate W is placed on the inner portion 14i such that the center of the substrate W coincides with the center of the inner portion 14i. The diameter of the inner portion 14i is greater than the radius of the substrate W and less than the diameter of the substrate W. The outer portion 14o is positioned below the inner portion 14i. The inner and outer circumferences of the outer portion 14o are concentric circles with respect to the inner portion 14i. The width of the outer portion 14o (the distance between the inner and outer circumferences of the outer portion 14o) is smaller than the radius of the inner portion 14i.

[0063] When the chuck pin 11 is positioned in the support position (shown in Figure 5B), the outer portion 14o of the hot plate 14 overlaps the chuck pin 11 in a plan view (when viewed vertically downwards). When the chuck pin 11 is positioned in the standby position (shown in Figure 5A), the outer portion 14o does not overlap the chuck pin 11 in a plan view. When the blocking member 41 is positioned in the lower position with the chuck pin 11 in the standby position and the hot plate 14 in the upper position, the gap between the lower surface of the cylindrical portion 41t of the blocking member 41 and the outer portion 14o of the hot plate 14 is sealed. As a result, a sealed space SP (see Figure 4) containing the substrate W is formed between the blocking member 41 and the hot plate 14.

[0064] When a sealed space SP is formed between the shut-off member 41 and the hot plate 14, the lower surface of the cylindrical portion 41t of the shut-off member 41 may be pressed directly against the outer portion 14o of the hot plate 14, or it may be pressed against the outer portion 14o via a rubber or resin sealing ring. The sealing ring may be held by either the shut-off member 41 or the hot plate 14. If two sealing rings are arranged concentrically between the shut-off member 41 and the hot plate 14, an exhaust passage for discharging gas from the annular space formed by the two sealing rings, the shut-off member 41, and the hot plate 14 may be provided on either the shut-off member 41 or the hot plate 14.

[0065] As shown in Figure 4, the shut-off member 41 includes a gas supply port 42 for supplying gas to the space inside the shut-off member 41 (the space inside the cylindrical portion 41t) and a gas outlet port 43 for discharging gas from the same space. Figure 4 shows an example in which the gas supply port 42 opens in the center of the lower surface of the plate-shaped portion 41p and the gas outlet port 43 opens on the inner circumferential surface of the cylindrical portion 41t. In this example, the gas outlet port 43 is located below the gas supply port 42.

[0066] The number of gas supply ports 42 provided on a single shut-off member 41 may be one or two or more. The same applies to the number of gas outlet ports 43. Multiple gas supply ports 42 may be arranged along one or more circles concentric with the shut-off member 41, at least one of the lower surface of the plate-shaped portion 41p and the inner circumferential surface of the cylindrical portion 41t. Similarly, multiple gas outlet ports 43 may be arranged along one or more circles concentric with the shut-off member 41, at least one of the lower surface of the plate-shaped portion 41p and the inner circumferential surface of the cylindrical portion 41t.

[0067] The blocking member 41 may or may not include a flow straightening plate 41r that partitions the space inside the blocking member 41, in addition to the plate-shaped portion 41p and the cylindrical portion 41t. Figures 2 to 4 show an example of the former. The flow straightening plate 41r is a horizontal disc concentric with the cylindrical portion 41t. The outer diameter of the flow straightening plate 41r is equal to or approximately equal to the inner diameter of the cylindrical portion 41t. The flow straightening plate 41r may be connected to either the plate-shaped portion 41p or the cylindrical portion 41t, or it may be integral with at least one of the plate-shaped portion 41p or the cylindrical portion 41t.

[0068] As shown in Figure 4, the rectifier plate 41r divides the space inside the shutoff member 41 into an upper space SP1 and a lower space SP2. The upper space SP1 is the portion between the plate-shaped portion 41p and the rectifier plate 41r in the space inside the cylindrical portion 41t. The lower space SP2 is the portion below the rectifier plate 41r in the space inside the cylindrical portion 41t. The gas supply port 42 is located above the rectifier plate 41r. The gas outlet 43 is located below the rectifier plate 41r. The vertical distance from the lower surface of the plate-shaped portion 41p to the upper surface of the rectifier plate 41r may be equal to or different from the vertical distance from the lower surface of the rectifier plate 41r to the lower end of the cylindrical portion 41t.

[0069] The rectifier plate 41r is a perforated plate having multiple gas passages 41g that penetrate vertically. The multiple gas passages 41g are open on the upper and lower surfaces of the rectifier plate 41r. The multiple gas passages 41g are arranged throughout the entire surface of the rectifier plate 41r. The gas discharged from the gas supply port 42 diffuses within the upper space SP1 and flows downward from the upper space SP1 to the lower space SP2 through the multiple gas passages 41g. As a result, the gas discharged from the gas supply port 42 is uniformly supplied to the lower space SP2.

[0070] The sealed space SP is a space formed by the cylindrical portion 41t, the plate-shaped portion 41p, and the hot plate 14. The upper space SP1 and the lower space SP2 are included in the sealed space SP. The sealed space SP is a space through which no substance can enter or exit except when passing through the gas supply port 42 and the gas outlet 43. The gas supply port 42 and the gas outlet 43 are examples of openings through which gases such as component gases pass. Instead of the gas supply port 42 and the gas outlet 43, a gas supply outlet that serves as both the gas supply port 42 and the gas outlet 43 may be provided on the shut-off member 41.

[0071] The gas supply port 42 is connected to a component gas pipe 44p that guides the component gas to be supplied to the shut-off member 41, and an inert gas pipe 45p that guides the inert gas to be supplied to the shut-off member 41. When the component gas valve 44v attached to the component gas pipe 44p is opened, the component gas is discharged from the gas supply port 42. When the inert gas valve 45v attached to the inert gas pipe 45p is opened, the inert gas is discharged from the gas supply port 42. Figure 4 shows an example where the component gas is ozone gas (O3) and the inert gas is nitrogen gas (N2). The inert gas pipe 45p is an example of a replacement gas pipe. The inert gas valve 45v is an example of a replacement gas valve.

[0072] The component gas is a gas that, by dissolving in or reacting with the component liquid, generates a processing solution for treating the substrate W together with the component liquid. If the component liquid is sulfuric acid, the component gas may be ozone gas. In this case, the ozone gas dissolves in the sulfuric acid, producing SOM (Sulfuric acid and Ozone Mixture), which is ozone-containing sulfuric acid.

[0073] The substrate processing apparatus 1 includes a component gas supply source containing component gas to be supplied to the gas supply port 42 via component gas piping 44p. If the component gas is ozone gas, the component gas supply source is an ozone generator 44g that generates ozone gas. The component gas supply source may also be a component gas tank containing the component gas.

[0074] The component gas valve 44v switches between an open state, which allows the component gas flowing through the component gas piping 44p to pass through, and a closed state, which stops the component gas flowing through the component gas piping 44p. When the component gas valve 44v is opened, it means that the component gas valve 44v has switched from the closed state to the open state. When the component gas valve 44v is opened, the component gas flows from the component gas supply source to the component gas piping 44p and is discharged from the gas supply port 42.

[0075] The combination of component liquid and component gas is not limited to sulfuric acid and ozone gas. The combination of component liquid and component gas may be any of the following: hydrogen peroxide and ammonia gas (SC1), hydrogen peroxide and chlorine gas (SC2), sulfuric acid and hydrogen peroxide gas (SPM: Sulfuric acid-Hydrogen Peroxide Mixture), pure water and fluorine gas (hydrofluoric acid), or pure water and ammonia gas (ammonium hydroxide), or any other combination. The treatment liquid in parentheses, such as SC1, represents the treatment liquid produced by the component liquid and component gas. The component gas does not need to dissolve in the component liquid as long as it can produce a treatment liquid. In other words, the treatment liquid is not limited to a component liquid in which the component gas is dissolved, but may also be a component liquid in which substances produced on the surface of the component liquid by the chemical reaction between the component liquid and component gas have diffused.

[0076] The processing solution generated by the component liquid and component gas may be an etching solution or a liquid other than an etching solution, such as a cleaning solution. SOM is an example of an etching solution. The object to be processed by the processing solution generated by the component liquid and component gas may be a resist or an object other than a resist, such as amorphous carbon. The object may also be a particle or an organic material.

[0077] The gas outlet 43 is connected to an exhaust pipe 46p that draws in gas. When the exhaust valve 46v attached to the exhaust pipe 46p is opened, gas is drawn into the gas outlet 43 from the space inside the shut-off member 41. The exhaust pipe 46p may be connected to an exhaust system installed in the factory where the substrate processing apparatus 1 is installed, or it may be connected to a negative pressure source 46s such as an exhaust pump or aspirator. Figure 4 shows an example of the latter.

[0078] The exhaust valve 46v may be a relief valve that automatically maintains the air pressure inside the space inside the shut-off member 41 below the set pressure by opening only when the air pressure inside the space inside the shut-off member 41 is above the set pressure, or it may be an electric valve equipped with an electric actuator that changes the degree of opening. The latter example will be described below. The control device 3 increases or decreases the degree of opening of the electric valve by controlling the electric actuator of the electric valve.

[0079] If the exhaust valve 46v is an electric valve, the substrate processing device 1 may be equipped with at least one of a pressure gauge MP for measuring the air pressure in the space inside the shutoff member 41 and a concentration meter MC for measuring the concentration of component gases in the space inside the shutoff member 41, or it may not be equipped with both the pressure gauge MP and the concentration meter MC.

[0080] The control device 3 may perform feedback control to maintain a constant air pressure in the sealed space SP by increasing or decreasing the opening of the exhaust valve 46v based on the value detected by the pressure gauge MP. The control device 3 may also determine whether or not to start feedback control based on the value detected by the concentration meter MC. In this way, the air pressure in the sealed space SP can be maintained at a constant level while maintaining the concentration of the component gases in the sealed space SP above a set value.

[0081] Next, I will explain the chuck pin 11.

[0082] Figures 5A, 5B, and 5C are schematic diagrams of the chuck pin 11. Figure 5A shows the chuck pin 11 in the standby position. Figure 5B shows the chuck pin 11 in the support position. Figure 5C shows the chuck pin 11 in the gripping position. The upper parts of Figures 5A, 5B, and 5C are schematic diagrams of the chuck pin 11 viewed horizontally. The lower parts of Figures 5A, 5B, and 5C are schematic diagrams of the chuck pin 11 viewed vertically.

[0083] Multiple chuck pins 11 horizontally support or hold the substrate W with its surface facing upward. Therefore, the top surface of the substrate W is the surface of the substrate W. The substrate W includes a surface and a back surface that are parallel to each other, and an annular end surface that connects the outer edges of the surface and the back surface along the entire circumference of the surface and the back surface. The surface of the substrate W is the device forming surface on which a device is formed. The back surface of the substrate W is a non-device forming surface on which no device is formed. Both the surface and the back surface of the substrate W may be device forming surfaces.

[0084] The chuck pin 11 includes a support portion 11s that contacts the lower surface of the substrate W, a gripping portion 11g that contacts the end face of the substrate W, an arm portion 11ar that supports the support portion 11s and the gripping portion 11g, and a rotating portion 11r that extends vertically downward from the arm portion 11ar. The rotating portion 11r is positioned so that its horizontal distance from the rotation axis A1 of the substrate W (see Figure 4) exceeds the radius of the substrate W. The support portion 11s and the gripping portion 11g are connected to the rotating portion 11r by the arm portion 11ar. The support portion 11s, the gripping portion 11g, and the arm portion 11ar are positioned above the upper surface 12u of the spin base 12.

[0085] The chuck pin 11 rotates around the rotating part 11r relative to the spin base 12 between the innermost inner position and the outermost standby position. The inner position is the position where the horizontal distance from the rotation axis A1 of the substrate W to the support part 11s is less than the radius of the substrate W. The standby position is the position where the horizontal distance from the rotation axis A1 of the substrate W to the support part 11s is greater than the radius of the substrate W. The support position and gripping position are positions between the inner position and the standby position. The support position is the position where the gripping part 11g is not pressed against the end face of the substrate W, and the support part 11s is in contact with the bottom surface of the substrate W. The gripping position is the position where the gripping part 11g is pressed against the end face of the substrate W.

[0086] The chuck pin 11 may be held in an inward position by an elastic body such as a spring, or by magnetic force. The former example will be described below. The chuck pin 11 is connected to an opening / closing actuator 11a (see Figure 3) that rotates the chuck pin 11 toward the standby position. The power of the opening / closing actuator 11a may be transmitted to multiple chuck pins 11 via multiple magnets, or to multiple chuck pins 11 via tangible objects such as links. Figure 3 shows the former example. The opening / closing actuator 11a moves the chuck pin 11 to a position outside of an inward position such as a support position or a standby position.

[0087] When the force transmitted from the opening / closing actuator 11a to the chuck pin 11 weakens after the opening / closing actuator 11a has moved the chuck pin 11 from its inner position, the chuck pin 11 returns to its inner position due to the restoring force of the elastic body. With the substrate W horizontally supported by the support portions 11s of the multiple chuck pins 11 located in the support positions, when the force transmitted from the opening / closing actuator 11a to the chuck pin 11 weakens, the multiple chuck pins 11 move inward, and the gripping portions 11g of the multiple chuck pins 11 are pressed against the end face of the substrate W. As a result, the multiple chuck pins 11 are positioned in their respective gripping positions.

[0088] Next, we will describe an example of the processing of substrate W.

[0089] Figure 6 is a process diagram illustrating an example of the processing of substrate W performed by the substrate processing apparatus 1. Figures 2 to 4 will be referenced below. Figure 6 will be referenced as appropriate.

[0090] When processing the substrate W with the substrate processing apparatus 1, a loading process (step S1 in Figure 6) is performed in which the substrate W is loaded into the chamber 4.

[0091] Specifically, with all guards 34 in the lower position, all scan nozzles in the standby position, the blocking member 41 in the upper position, the hot plate 14 in the lower position, and the multiple chuck pins 11 in the support position, the center robot CR (see Figure 1A) moves the hand Hc into the chamber 4 while horizontally supporting the substrate W with the hand Hc so that the surface of the substrate W faces upward. Then, the center robot CR places the substrate W on the hand Hc onto the support parts 11s of the multiple chuck pins 11 located in the support position (see Figure 5B). After that, the center robot CR moves the hand Hc out of the chamber 4.

[0092] When the substrate W on the hand Hc is placed on the support portions 11s of the multiple chuck pins 11 located in the support position, the multiple gripping portions 11g are separated from the end face of the substrate W, while the multiple support portions 11s contact the underside of the substrate W (see Figure 5B). As a result, the substrate W is supported horizontally by the multiple chuck pins 11. Subsequently, the opening / closing actuator 11a moves the multiple chuck pins 11 from the support position to the gripping position. As a result, the multiple gripping portions 11g are pressed against the end face of the substrate W, and the substrate W is held horizontally (see Figure 5C). In other words, the substrate W is fixed to the multiple chuck pins 11, and movement of the substrate W relative to the multiple chuck pins 11 is prevented.

[0093] Next, a first chemical solution supply step is performed, in which SOM, an example of the first chemical solution, is supplied to the upper surface of the substrate W.

[0094] Specifically, the spin motor 13 rotates the substrate W, which is held by a plurality of chuck pins 11. Simultaneously with, or before or after, the rotation of the substrate W begins, the first nozzle actuator 21a moves the first chemical nozzle 21 from the standby position to the processing position. This positions the first chemical nozzle 21 between the blocking member 41 and the substrate W. Subsequently, the first chemical valve 21v is opened. This causes the first chemical nozzle 21 to begin discharging sulfuric acid. Before the discharging of sulfuric acid begins, the guard lifting actuator 34a raises at least one guard 34 from the lower position to the upper position.

[0095] The sulfuric acid discharged from the first chemical nozzle 21 collides with the upper surface of the substrate W, which is rotating at the first chemical supply speed, and then spreads along the upper surface of the substrate W. As a result, the entire upper surface of the substrate W, which is held by the multiple chuck pins 11, is covered with a film of sulfuric acid (step S2 in Figure 6). Subsequently, the first chemical valve 21v is closed, and the first chemical nozzle 21 stops discharging sulfuric acid. The first nozzle actuator 21a moves the first chemical nozzle 21 from the processing position to the standby position while the first chemical nozzle 21 is not discharging sulfuric acid.

[0096] When the first chemical nozzle 21 is discharging sulfuric acid, the first nozzle actuator 21a may move the collision position of the sulfuric acid on the upper surface of the substrate W so that the collision position passes through the central part and the outer edge, or it may keep the collision position stationary in the central part. The same applies when a processing liquid other than sulfuric acid is being discharged toward the upper surface of the substrate W.

[0097] After the entire upper surface of the substrate W is covered with a film of sulfuric acid, the spin motor 13 stops the substrate W, which is held by the multiple chuck pins 11. Then, the opening / closing actuator 11a moves the multiple chuck pins 11 from the gripping position to the support position. This releases the substrate W from the multiple chuck pins 11. Then, the lifting actuator 14a moves the hot plate 14 from the lower position to the upper position. As a result, with the entire upper surface of the substrate W covered with a film of sulfuric acid, the substrate W is lifted by the hot plate 14 and moves upward away from the multiple chuck pins 11 (step S3 in Figure 6). The substrate W is heated by the hot plate 14. The heating of the hot plate 14 may start at the same time as the hot plate 14 contacts the lower surface of the substrate W, or it may start before or after. When the hot plate 14 is heating the substrate W, the temperature of the hot plate 14 may be less than 100°C or 100°C or higher.

[0098] After the substrate W is lifted by the hot plate 14, the opening / closing actuator 11a moves the multiple chuck pins 11 from the support position to the standby position. This positions the multiple chuck pins 11 so that they do not overlap with the blocking member 41 in a plan view. Subsequently, the lifting actuator 41a moves the blocking member 41 from the upper position to the lower position. This seals the gap between the lower surface of the cylindrical portion 41t of the blocking member 41 and the upper surface of the hot plate 14, forming a sealed space SP (see Figure 4) containing the substrate W between the blocking member 41 and the hot plate 14 (step S4 in Figure 6). When the blocking member 41 is in the lower position, the substrate W is positioned above the lower end of the cylindrical portion 41t of the blocking member 41 and is surrounded by the cylindrical portion 41t of the blocking member 41. The space inside the blocking member 41 is divided into an upper space SP1 and a lower space SP2 by a rectifier plate 41r. The substrate W is positioned in the lower space SP2, separated from the rectifier plate 41r.

[0099] After the space containing the substrate W is sealed, the component gas valve 44v and the exhaust valve 46v are opened. When the component gas valve 44v is opened, ozone gas is supplied to the space between the shut-off member 41 and the hot plate 14 through the gas supply port 42 (step S5 in Figure 6). When the exhaust valve 46v is opened, the gas is discharged from the space between the shut-off member 41 and the hot plate 14 through the gas outlet 43. If there is a period when both the component gas valve 44v and the exhaust valve 46v are open, they may be opened simultaneously or at different times.

[0100] Immediately after opening the component gas valve 44v and the exhaust valve 46v, ozone gas is supplied to the space between the shut-off member 41 and the hot plate 14, while air is discharged from the space between the shut-off member 41 and the hot plate 14. If the supply of ozone gas and the discharge of air continue, the air between the shut-off member 41 and the hot plate 14 will be replaced with ozone gas. As a result, the space between the shut-off member 41 and the hot plate 14 will be filled with ozone gas.

[0101] The air pressure in the space containing the substrate W, that is, the pressure of the ozone gas in the space between the shut-off member 41 and the hot plate 14, is maintained at a higher value than the air pressure in the space within the chamber 4 excluding the space between the shut-off member 41 and the hot plate 14. If this condition is met, the supply of ozone gas to the space between the shut-off member 41 and the hot plate 14 and the discharge of gas from that space may be stopped or continued. In the latter case, the air pressure in the space between the shut-off member 41 and the hot plate 14 may be kept constant by changing the gas pressure loss upstream or downstream of the space between the shut-off member 41 and the hot plate 14. Figure 7, described later, shows an example of changing the gas pressure loss downstream of the space between the shut-off member 41 and the hot plate 14 by changing the opening of the exhaust valve 46v.

[0102] Sulfuric acid is an example of a component liquid, and ozone gas is an example of a component gas. When ozone gas is supplied to the space between the barrier member 41 and the hot plate 14 while the entire upper surface of the substrate W is covered with a liquid film of sulfuric acid, the ozone gas comes into contact with the liquid film of sulfuric acid on the substrate W and dissolves into the sulfuric acid. This allows the SOM to be supplied to the entire upper surface of the substrate W. The objects to be etched exposed on the upper surface of the substrate W come into contact with the SOM on the substrate W. This allows the objects to be etched, such as resist films, to be etched with the SOM.

[0103] The SOM on the substrate W is heated by the hot plate 14 via the substrate W. The SOM generates peroxodisulfate ions. The peroxodisulfate ions are converted into highly oxidative sulfate ion radicals. By applying thermal energy to the SOM, the conversion to sulfate ion radicals can be accelerated. This increases the reactivity of the SOM and shortens the etching time required for the etching target.

[0104] The amount of ozone gas that dissolves, that is, the amount of ozone gas that dissolves in sulfuric acid, depends on the concentration and pressure of the ozone gas. By filling the space between the barrier member 41 and the hot plate 14 with ozone gas and maintaining the pressure of the ozone gas in that space at a value higher than the atmospheric pressure in the space within the chamber 4 excluding the space between the barrier member 41 and the hot plate 14, both the concentration and pressure of the ozone gas are high. In particular, since the space containing the substrate W is sealed, the concentration and pressure of the ozone gas can be increased to higher values ​​than if the space were not sealed.

[0105] After a predetermined time has elapsed since the supply of ozone gas to the space between the shut-off member 41 and the hot plate 14 began, the ozone gas between the shut-off member 41 and the hot plate 14 is replaced with a gas other than ozone gas, such as an inert gas. Specifically, if the supply of ozone gas to the space between the shut-off member 41 and the hot plate 14 and the discharge of gas from that space have been stopped, the exhaust valve 46v is opened to restart the discharge of gas. If the supply of ozone gas to the space between the shut-off member 41 and the hot plate 14 and the discharge of gas from that space are continuing, the component gas valve 44v is closed while continuing the discharge of gas to stop the supply of ozone gas.

[0106] With the supply of ozone gas to the space between the shut-off member 41 and the hot plate 14 stopped and gas being discharged from that space, the inert gas valve 45v is opened. This starts the supply of nitrogen gas to the space between the shut-off member 41 and the hot plate 14 (step S6 in Figure 6). Nitrogen gas is an example of a replacement gas different from the component gas. If the supply of nitrogen gas and the discharge of gas continue, the ozone gas between the shut-off member 41 and the hot plate 14 will be replaced with nitrogen gas, and the space between the shut-off member 41 and the hot plate 14 will be filled with nitrogen gas. After that, the inert gas valve 45v and the exhaust valve 46v are closed to stop the supply of nitrogen gas and the discharge of gas.

[0107] Next, a first rinsing solution supply step is performed, in which pure water, which is an example of a rinsing solution, is supplied to the upper surface of the substrate W.

[0108] Specifically, the lifting actuator 41a moves the blocking member 41 from the lower position to the upper position. As a result, the lower end of the cylindrical portion 41t of the blocking member 41 is positioned above the upper end of the chuck pins 11, and the seal on the space containing the substrate W is released (step S7 in Figure 6). Subsequently, the opening / closing actuator 11a moves the multiple chuck pins 11 from the standby position to the support position. Then, the lifting actuator 14a moves the hot plate 14 from the upper position to the lower position. As a result, with the entire upper surface of the substrate W covered by the liquid film of SOM, the substrate W on the hot plate 14 is placed on the support portions 11s of the multiple chuck pins 11, and the hot plate 14 moves downward away from the substrate W (step S8 in Figure 6). Subsequently, the opening / closing actuator 11a moves the multiple chuck pins 11 from the support position to the gripping position.

[0109] After the multiple chuck pins 11 have moved to the gripping position, the spin motor 13 rotates the substrate W held by the multiple chuck pins 11. Simultaneously with, or before or after, the rotation of the substrate W begins, the third nozzle actuator 23a moves the rinse liquid nozzle 23 from the standby position to the processing position. This positions the rinse liquid nozzle 23 between the shut-off member 41 and the substrate W. Subsequently, the rinse liquid valve 23v is opened. This causes the rinse liquid nozzle 23 to begin discharging pure water. The guard lifting actuator 34a may switch the guard 34 that receives the liquid discharged from the substrate W by moving at least one guard 34 vertically before the discharge of pure water begins. This is also the case in the second chemical supply process described later.

[0110] The pure water discharged from the rinse liquid nozzle 23 collides with the upper surface of the substrate W, which is rotating at the first rinse liquid supply speed, and then spreads along the upper surface of the substrate W. As a result, the SOM on the substrate W is replaced with pure water, and the entire upper surface of the substrate W, which is held by the multiple chuck pins 11, is covered with a liquid film of pure water (step S9 in Figure 6). Subsequently, the rinse liquid valve 23v is closed, and the rinse liquid nozzle 23 stops discharging pure water. The third nozzle actuator 23a moves the rinse liquid nozzle 23 from the processing position to the standby position while the rinse liquid nozzle 23 is not discharging pure water.

[0111] Next, a second chemical solution supply step (step S10 in Figure 6) is performed, in which SC1, an example of a second chemical solution, is supplied to the upper surface of the substrate W.

[0112] Specifically, with the substrate W held by multiple chuck pins 11 and the shut-off member 41 in the upper position, the second nozzle actuator 22a moves the second chemical nozzle 22 from the standby position to the processing position. Then, the second chemical valve 22v is opened. This causes the second chemical nozzle 22 to start discharging SC1. The SC1 discharged from the second chemical nozzle 22 collides with the upper surface of the substrate W, which is rotating at the second chemical supply speed, and then spreads along the upper surface of the substrate W. As a result, the pure water on the substrate W is replaced with SC1, and the entire upper surface of the substrate W held by the multiple chuck pins 11 is covered with a liquid film of SC1. Then, the second chemical valve 22v is closed, and the second chemical nozzle 22 stops discharging SC1. The second nozzle actuator 22a moves the second chemical nozzle 22 from the processing position to the standby position when the second chemical nozzle 22 is not discharging SC1.

[0113] Next, a second rinse solution supply step (step S11 in Figure 6) is performed, in which pure water, which is an example of a rinse solution, is supplied to the upper surface of the substrate W.

[0114] Specifically, with the substrate W held by multiple chuck pins 11 and the shut-off member 41 in the upper position, the third nozzle actuator 23a moves the rinse liquid nozzle 23 from the standby position to the processing position. Then, the rinse liquid valve 23v is opened. This causes the rinse liquid nozzle 23 to start discharging the rinse liquid. The rinse liquid discharged from the rinse liquid nozzle 23 collides with the upper surface of the substrate W, which is rotating at the second rinse liquid supply speed, and then spreads along the upper surface of the substrate W. As a result, SC1 on the substrate W is replaced with pure water, and the entire upper surface of the substrate W held by the multiple chuck pins 11 is covered with a liquid film of pure water. Then, the rinse liquid valve 23v is closed, and the rinse liquid nozzle 23 stops discharging pure water. The third nozzle actuator 23a moves the rinse liquid nozzle 23 from the processing position to the standby position when the rinse liquid nozzle 23 is not discharging pure water.

[0115] Next, a drying process (step S12 in Figure 6) is performed to dry the substrate W by rotating it.

[0116] Specifically, with the substrate W held by multiple chuck pins 11, the spin motor 13 accelerates the substrate W in the rotational direction. This causes the substrate W to rotate at a drying speed greater than the rotational speed when the processing liquid, such as the first chemical solution, is supplied to the substrate W. As the substrate W rotates at the drying speed, the liquid is removed from the substrate W, and the substrate W dries. After that, the spin motor 13 stops rotating. This stops the rotation of the substrate W while it is still held by the multiple chuck pins 11.

[0117] Next, the substrate W is removed from the chamber 4 in an unloading process (step S13 in Figure 6).

[0118] Specifically, the opening / closing actuator 11a moves the multiple chuck pins 11 from the gripping position to the support position. Simultaneously with, or before or after, the release of the substrate W from the multiple chuck pins 11, the guard lifting actuator 34a lowers all the guards 34 to their lowest position. Then, the center robot CR (see Figure 1A) moves the hand Hc into the chamber 4. Next, the center robot CR lifts the substrate W, which is supported by the multiple chuck pins 11, with the hand Hc. Then, while supporting the substrate W horizontally with the hand Hc, the center robot CR moves the hand Hc out of the chamber 4. As a result, the processed substrate W is discharged from the chamber 4.

[0119] Next, we will explain an example of pressure changes within a sealed space SP.

[0120] Figure 7 is a timing chart illustrating the process from sealing the space containing the substrate W to replacing the ozone gas in that space with nitrogen gas, in an example of substrate W processing shown in Figure 6. Figures 4 and 7 will be referenced below.

[0121] In Figure 7, "Substrate Sealing" ON indicates that the space containing the substrate W is sealed, while "Substrate Sealing" OFF indicates that the space containing the substrate W is not sealed. The initial value of "Atmospheric Pressure in Sealed Space" in Figure 7 represents the atmospheric pressure inside Chamber 4. This initial value may be atmospheric pressure (1 atmosphere), or it may be a value higher or lower than atmospheric pressure.

[0122] In Figure 7, "Ozone Gas Supply" being ON means that ozone gas is supplied to the space between the shut-off member 41 and the hot plate 14, while "Ozone Gas Supply" being OFF means that ozone gas is not supplied to the space between the shut-off member 41 and the hot plate 14. The same applies to "Nitrogen Gas Supply" being ON and OFF in Figure 7. "Exhaust Valve 46v" being fully open in Figure 7 means that the exhaust valve 46v is at its maximum opening, while "Exhaust Valve 46v" being fully closed means that the exhaust valve 46v is at its minimum opening.

[0123] In the example shown in Figure 7, the gap between the shutoff member 41 and the hot plate 14 is sealed at time T1. This seals the space containing the substrate W. The component gas valve 44v is opened at time T1. This starts the supply of ozone gas to the sealed space SP. The exhaust valve 46v is opened to its maximum opening at time T1. Although the supply of ozone gas to the sealed space SP begins, gas is discharged from the sealed space SP, so the air pressure inside the sealed space SP is maintained at or approximately equal to the initial value from time T1 to time T2.

[0124] The exhaust valve 46v is closed to an opening greater than the minimum opening (zero) at time T2. This increases the air pressure inside the sealed space SP, which is maintained at a constant or nearly constant value above the initial value from time T2 to time T3. Between time T2 and time T3, as described above, SOM is generated on the upper surface of the substrate W and the substrate W is processed. The component gas valve 44v is closed at time T3. The exhaust valve 46v is opened to its maximum opening at time T3. This causes the air pressure inside the sealed space SP to decrease while the ozone gas remains filled inside the sealed space SP. Figure 7 shows an example where the air pressure inside the sealed space SP has decreased to the initial value.

[0125] The inert gas valve 45v is opened at time T4. This initiates the supply of nitrogen gas to the sealed space SP. The inert gas valve 45v remains open from time T4 to time T5. Between time T4 and time T5, the exhaust valve 46v is at its maximum opening. Therefore, the ozone gas in the sealed space SP is rapidly replaced with nitrogen gas. The inert gas valve 45v and the exhaust valve 46v are closed at time T5. The shut-off member 41 moves from its lower position at time T5. This opens the space containing the substrate W. Subsequently, pure water is supplied to the upper surface of the substrate W (step S9 in Figure 6).

[0126] Next, the effects of this embodiment will be described.

[0127] In this embodiment, a component liquid such as sulfuric acid is supplied to the upper surface of the substrate W. Then, with the component liquid on the upper surface of the substrate W, the gap between the barrier member 41 and the hot plate 14 is sealed. This creates a sealed space SP between the barrier member 41 and the hot plate 14 that houses the substrate W held by the hot plate 14. In this state, a component gas such as ozone gas is supplied to the sealed space SP. As a result, with the component liquid on the upper surface of the substrate W, the air pressure inside the sealed space SP rises to a value higher than the air pressure outside the sealed space SP. For example, the air pressure inside the sealed space SP rises to a value higher than when the space housing the substrate W is not sealed.

[0128] When component gases are supplied to a sealed space SP, the concentration of component gases within the sealed space SP increases. When the air pressure inside the sealed space SP is increased to a value higher than the air pressure outside the sealed space SP, the concentration of component gases within the sealed space SP increases further. Because the concentration and pressure of component gases within the sealed space SP are high, a processing solution containing component liquids and component gases can be efficiently generated on the upper surface of the substrate W.

[0129] For example, when a component gas dissolves in a component liquid, the amount and rate of dissolution of the component gas can be increased compared to when the concentration and pressure of the component gas in the sealed space SP are low. When a substance that treats the substrate W is produced by a chemical reaction between the component liquid and the component gas, the number of component gas molecules or atoms present in the sealed space SP is greater than when the concentration and pressure of the component gas in the sealed space SP is low, thus increasing the number of component gas molecules or atoms that react with the component liquid. This allows for the efficient generation of the substance that treats the substrate W in the component liquid.

[0130] In this embodiment, component gases are continuously supplied to the sealed space SP while gas is discharged from the sealed space SP. In other words, the pressure inside the sealed space SP is maintained at a higher value than the pressure outside the sealed space SP while the component gases inside the sealed space SP are continuously replaced with new component gases. Therefore, compared to the case where the supply of component gases to the sealed space SP is stopped while the pressure inside the sealed space SP is maintained at a higher value than the pressure outside the sealed space SP, new component gases can be efficiently supplied to the component liquid on the substrate W, and the fluidity of the component gases in the sealed space SP can be increased.

[0131] In this embodiment, the component liquid is discharged onto the upper surface of the substrate W held by the spin chuck 10 while the substrate W is rotated on the spin chuck 10. This allows the component liquid to be supplied uniformly to the upper surface of the substrate W. In this state, the substrate W is moved from the spin chuck 10 to the hot plate 14 by moving the spin chuck 10 and the hot plate 14 relatively. Subsequently, with the component liquid on the upper surface of the substrate W and the air pressure inside the sealed space SP higher than the air pressure outside the sealed space SP, the substrate W is heated while being held on the hot plate 14. This allows the component gas to come into contact with the component liquid on the substrate W while heating the substrate W and the component liquid. As a result, the temperature of the processing solution containing the component liquid and component gas can be increased, and the reactivity of the processing solution can be enhanced.

[0132] In this embodiment, a sealed space SP containing the substrate W held on the hot plate 14 is formed between the blocking member 41 and the hot plate 14 by sealing the gap between the blocking member 41 and the hot plate 14, rather than the gap between the blocking member 41 and the spin chuck 10. The spin chuck 10 holds the substrate W horizontally with a plurality of chuck pins 11 arranged around the substrate W. If the gap between the blocking member 41 and the spin chuck 10 is sealed, it is necessary to seal the gap on the outside of the plurality of chuck pins 11. Therefore, the blocking member 41 can be made smaller compared to the case where the gap between the blocking member 41 and the spin chuck 10 is sealed.

[0133] In this embodiment, the component gas is diffused into the upper space SP1 formed by the cylindrical portion 41t, the plate portion 41p, and the rectifier plate 41r of the shut-off member 41. The component gas in the upper space SP1 flows through a plurality of gas passages 41g that penetrate the rectifier plate 41r vertically, and into the lower space SP2, which is the lower part of the space inside the cylindrical portion 41t of the shut-off member 41, below the rectifier plate 41r. When the sealed space SP is formed between the shut-off member 41 and the hot plate 14, the substrate W is positioned in the lower space SP2. Therefore, the component gas can be supplied more uniformly to the component liquid on the substrate W compared to when the rectifier plate 41r is not present.

[0134] In this embodiment, the pressure inside the sealed space SP is raised to a value higher than the pressure outside the sealed space SP by supplying the component gas, and then the pressure inside the sealed space SP is lowered by discharging the component gas from the sealed space SP. Subsequently, with the sealed space SP filled with the component gas and the pressure inside the sealed space SP lowered, a replacement gas other than the component gas, such as an inert gas or air, is supplied to the sealed space SP while the component gas is being discharged from the sealed space SP. As a result, the component gas inside the sealed space SP is replaced by the replacement gas. If the replacement gas is supplied to the sealed space SP while the pressure inside the sealed space SP is high, backflow may occur where the component gas inside the sealed space SP flows into the path for supplying the replacement gas. Lowering the pressure inside the sealed space SP can prevent such backflow.

[0135] In this embodiment, the gap between the shut-off member 41 and the hot plate 14 is sealed within the chamber 4. This creates a sealed space SP between the shut-off member 41 and the hot plate 14 that houses the substrate W held by the hot plate 14. The component gas is not supplied to the entire space within the chamber 4, but only to the space between the shut-off member 41 and the hot plate 14, which is a part of the space within the chamber 4. Therefore, the range over which the component gas diffuses can be narrowed, and the amount of component gas used can be reduced.

[0136] Next, other embodiments will be described.

[0137] Instead of moving the blocking member 41 relative to the hot plate 14, the sealed space SP containing the substrate W may be formed between the blocking member 41 and the hot plate 14 by moving only the hot plate 14, or both the blocking member 41 and the hot plate 14.

[0138] The sealed space SP containing the substrate W may be formed between the blocking member 41 and the spin base 12 by sealing the gap between the blocking member 41 and the spin base 12, rather than the gap between the blocking member 41 and the hot plate 14.

[0139] Either the spin chuck 10 or the hot plate 14 may be omitted.

[0140] The substrate W may be held in the spin chuck 10 from the start of supplying the processing solution to the substrate W until the substrate W is dry. In other words, it is not necessary to move the substrate W from the spin chuck 10 to the hot plate 14. In this case, the substrate W may be heated on the hot plate 14 while the hot plate 14 is separated from the substrate W.

[0141] As shown in Figure 8, even if the gap G1 between the blocking member 41 and the hot plate 14 is not sealed, a component gas such as ozone gas may be supplied to the space between the blocking member 41 and the hot plate 14.

[0142] In the example shown in Figure 8, ozone gas is supplied to the space between the shut-off member 41 and the hot plate 14 while the gap G1 between the shut-off member 41 and the hot plate 14 is not sealed. The pressure of the ozone gas moves the gas between the shut-off member 41 and the hot plate 14 towards the gap G1. As a result, the gas is discharged through the gap G1. Even if one or more gas outlets 43 (see Figure 4) are provided on the shut-off member 41, it is difficult to make the opening area of ​​the gas outlet 43 (the area of ​​the cross-section along a plane perpendicular to the direction of gas flow) larger than the opening area of ​​the gap G1. Therefore, the gas between the shut-off member 41 and the hot plate 14 can be quickly replaced with ozone gas before the gap G1 is sealed.

[0143] The upper end 34u of the guard 34 surrounds the blocking member 41 and the hot plate 14 in a plan view. When supplying component gas to the space between the blocking member 41 and the hot plate 14 while the gap G1 is not sealed, the upper end 34u of the guard 34 may be positioned above the gap G1, as shown in Figure 8, and the gas inside the guard 34 may be discharged through the exhaust duct 8, which is positioned below the gap G1. In this way, the gas that comes out of the gap G1 flows downward through the space inside the guard 34 towards the exhaust duct 8 and is drawn into the exhaust duct 8. Therefore, the area over which the gas discharged from the gap G1 diffuses can be narrowed.

[0144] The substrate W may be dried with an organic solvent liquid that is more volatile than water, rather than pure water. As shown in Figure 9, the substrate W may be dried with IPA (isopropyl alcohol), which is an example of an organic solvent, attached to it. In this case, an organic solvent supply step may be performed to supply IPA, an example of an organic solvent, to the upper surface of the substrate W after the second rinsing liquid supply step (step S11 in Figure 6) and before the drying step (step S12 in Figure 6).

[0145] Specifically, while the substrate W is rotated on the spin chuck 10, IPA (liquid; the same applies hereinafter) may be discharged from the organic solvent nozzle 24 (see Figure 3) toward the upper surface of the substrate W. Figure 3 shows an example in which an organic solvent pipe 24p with an organic solvent valve 24v attached is connected to the organic solvent nozzle 24, and a fourth nozzle actuator 24a moves the organic solvent nozzle 24 horizontally between a processing position and a standby position. When supplying IPA to the substrate W, a dedicated guard 34 (see Figure 3) may be provided to catch IPA scattered from the substrate W.

[0146] After the entire upper surface of the substrate W is covered with a liquid film of an organic solvent such as IPA, the substrate W is moved from the spin chuck 10 to the hot plate 14 by moving the spin chuck 10 and the hot plate 14 relative to each other in this state. Subsequently, by sealing the gap between the blocking member 41 and the hot plate 14, a sealed space SP containing the substrate W held on the hot plate 14 is formed between the blocking member 41 and the hot plate 14. Before moving the substrate W from the spin chuck 10 to the hot plate 14, the substrate W may be rotated to reduce the thickness of the liquid film of the organic solvent while the entire upper surface of the substrate W is covered with the liquid film of the organic solvent.

[0147] As shown in Figure 9, after the sealed space SP is formed, the exhaust valve 46v is opened while the liquid organic solvent is on the upper surface of the substrate W, and the gas in the sealed space SP is discharged through the gas outlet 43 to the exhaust pipe 46p. This reduces the air pressure in the sealed space SP to, for example, below atmospheric pressure. Organic solvents are more volatile than water. When the air pressure in the sealed space SP is reduced while the liquid organic solvent is on the upper surface of the substrate W, the evaporation of the organic solvent is promoted. As a result, the amount of organic solvent on the substrate W gradually decreases and disappears from the upper surface of the substrate W. In other words, the substrate W dries while remaining stationary. Therefore, the sealed space SP can also be used to dry the substrate W.

[0148] The object to be processed by the processing solution generated by the component liquid and component gas may be molybdenum trioxide. In other words, digital etching as described in Japanese Patent Application Publication No. 2024-018601 may be performed. In this case, after supplying oxygen gas or ozone gas discharged from the gas supply port 42 to the upper surface of the substrate W, ammonia gas may be discharged from the gas supply port 42 while the upper surface of the substrate W is covered with a liquid film of pure water. In this way, the bulk layer of the molybdenum film covered by the surface layer of the molybdenum film does not change into a molybdenum trioxide film, but the surface layer of the molybdenum film is changed into a molybdenum trioxide film by the oxygen gas or ozone gas. Subsequently, the molybdenum trioxide film is etched with ammonium hydroxide, and the bulk layer of the molybdenum film is exposed. By repeating this, the thickness of the molybdenum film is gradually reduced.

[0149] The substrate processing apparatus 1 is not limited to an apparatus for processing a disc-shaped substrate W, but may also be an apparatus for processing a polygonal substrate W.

[0150] You may combine two or more of the above-mentioned configurations. You may also combine two or more of the above-mentioned processes.

[0151] Although embodiments of the present invention have been described in detail, these are merely specific examples used to clarify the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples. The spirit and scope of the present invention are limited only by the appended claims. [Explanation of Symbols]

[0152] 1: Substrate processing unit, 1a: Outer wall, 2: Processing unit, 3: Control device, 3c: CPU, 3m: Memory, 4: Chamber, 5: Partition wall, 6: Door, 7: FFU, 8: Exhaust duct, 9: Exhaust valve, 10: Spin chuck, 11: Chuck pin, 11a: Opening / closing actuator, 11ar: Arm section, 11g: Gripping section, 11r: Rotating section, 11s: Support section, 12: Spin base, 12u: Top surface, 13: Spin motor, 14: Hot plate, 14a: Lifting / lowering actuator 14h: Heating element, 14i: Inner part, 14o: Outer part, 14s: Support shaft, 21: First chemical nozzle, 21a: First nozzle actuator, 21p: First chemical piping, 21v: First chemical valve, 22: Second chemical nozzle, 22a: Second nozzle actuator, 22p: Second chemical piping, 22v: Second chemical valve, 23: Rinse liquid nozzle, 23a: Third nozzle actuator, 23p: Rinse liquid piping, 23v: Rinse liquid valve, 24: Organic solvent nozzle, 24a: Fourth nozzle Actuator, 24p: Organic solvent piping, 24v: Organic solvent valve, 31: Processing cup, 32: Cylindrical outer wall, 33: Cup, 34: Guard, 34a: Guard lifting actuator, 34u: Upper end, 35: Cylindrical part, 36: Ceiling part, 41: Shut-off member, 41a: Lifting actuator, 41g: Gas passage, 41p: Plate-shaped part, 41r: Rectifier plate, 41t: Cylindrical part, 42: Gas supply port, 43: Gas outlet, 44g: Ozone generator, 44p: Component gas piping, 44v: Component gas valve Lub, 45p: Inert gas piping, 45v: Inert gas valve, 46p: Exhaust pipe, 46s: Negative pressure source, 46v: Exhaust valve, A1: Rotation axis, CA: Carrier, CR: Center robot, G1: Gap, Hc: Hand, Hi: Hand, IR: Indexer robot, LP: Load port, MC: Concentration meter, MP: Pressure gauge, S1~S13: Step, SP: Sealed space, SP1: Upper space, SP2: Lower space, TP: Conveyor path, TS: Conveyor system, TW: Tower, W: Substrate

Claims

1. A substrate holding process in which the substrate is held horizontally in a substrate holder, A component liquid supply step of supplying a component liquid to the upper surface of the substrate held in the substrate holder, A sealing step is to seal the gap between the blocking member and the substrate holder, thereby forming a sealed space between the blocking member and the substrate holder that contains the substrate held in the substrate holder while the component liquid is on the upper surface of the substrate; A substrate processing method comprising: a pressurization step of supplying a component gas that generates a processing liquid together with the component liquid to the sealed space, thereby raising the air pressure inside the sealed space to a value higher than the air pressure outside the sealed space while the component liquid is on the upper surface of the substrate.

2. The substrate processing method according to claim 1, wherein the pressurization step includes a step of supplying the component gas to the sealed space while discharging gas from the sealed space, thereby maintaining the pressure inside the sealed space at a higher value than the pressure outside the sealed space while the component liquid is on the upper surface of the substrate.

3. The substrate holder includes a spin chuck that rotates the substrate while holding it horizontally with a plurality of chuck pins arranged around the substrate, and a hot plate that heats the substrate while holding it horizontally. The substrate processing method further includes a substrate transfer step of moving the substrate between the spin chuck and the hot plate by moving the spin chuck and the hot plate relative to each other, The component liquid supply step includes a step of discharging the component liquid toward the upper surface of the substrate held in the spin chuck while rotating the substrate in the spin chuck, The substrate processing method according to claim 1 or 2, wherein the pressurization step includes a step of heating the substrate while holding it on the hot plate, with the component liquid on the upper surface of the substrate and the air pressure inside the sealed space being higher than the air pressure outside the sealed space.

4. The substrate processing method according to claim 3, wherein the sealing step includes sealing the gap between the blocking member and the hot plate, thereby forming a sealed space between the blocking member and the hot plate that houses the substrate held on the hot plate while the component liquid is on the upper surface of the substrate.

5. The aforementioned pressurization step is The process involves diffusing the component gas into the upper space, which is the space between the rectifier plate of the barrier member positioned above the substrate held in the substrate holder and the plate-shaped portion of the barrier member positioned above the rectifier plate, within the space inside the cylindrical portion of the barrier member surrounding the substrate held in the substrate holder while the sealed space is formed. The substrate processing method according to claim 1 or 2, comprising the step of supplying the component gas in the upper space to the lower space, which is the lower part of the space inside the cylindrical portion of the blocking member, through a plurality of gas passages that penetrate the rectifier plate vertically.

6. A depressurization step is performed to reduce the air pressure inside the sealed space by discharging the component gas from the sealed space, A substrate processing method according to claim 1 or 2, further comprising: a replacement gas supply step of supplying a replacement gas, which is a gas other than the component gas, to the sealed space after the air pressure in the sealed space has decreased, while the sealed space is filled with the component gas and the component gas is being discharged from the sealed space.

7. The substrate processing method according to claim 1 or 2, further comprising a pressurization preparation step of supplying the component gas to the space between the blocking member and the substrate holder while the gap between the blocking member and the substrate holder is not sealed, thereby discharging the gas in the space between the blocking member and the substrate holder through the gap.

8. The substrate processing method according to claim 7, wherein the pressurization preparation step includes, while the gap between the blocking member and the substrate holder is not sealed and the component gas is supplied to the space between the blocking member and the substrate holder, the step of discharging the gas inside the guard through an exhaust duct located below the gap, while positioning the upper end of the guard surrounding the blocking member and the substrate holder in a plan view above the gap.

9. After supplying the aforementioned component gas to the sealed space, an organic solvent supply step is performed, in which a liquid organic solvent with higher volatility than water is supplied to the upper surface of the substrate held in the substrate holder. A substrate processing method according to claim 1 or 2, further comprising: a substrate drying step in which, while the liquid of the organic solvent is on the upper surface of the substrate, gas is discharged from the sealed space to reduce the air pressure inside the sealed space, thereby evaporating the liquid of the organic solvent on the upper surface of the substrate until the upper surface of the substrate is dry.

10. The substrate processing method according to claim 1 or 2, wherein the sealing step is a step of sealing the gap between the blocking member and the substrate holder in a chamber housing the blocking member and the substrate holder, thereby forming a sealed space between the blocking member and the substrate holder that houses the substrate held in the substrate holder while the component liquid is on the upper surface of the substrate.

11. A circuit board holder that holds the circuit board horizontally, A component liquid nozzle that discharges the component liquid toward the upper surface of the substrate held in the substrate holder, Barrier member and A relative movement actuator that reduces the distance between the blocking member and the substrate holder, thereby sealing the gap between the blocking member and the substrate holder, and thereby forming a sealed space between the blocking member and the substrate holder that houses the substrate held in the substrate holder while the component liquid is on the upper surface of the substrate. A substrate processing apparatus comprising: a component gas piping that supplies a component gas that generates a processing liquid together with the component liquid into the sealed space, thereby raising the air pressure inside the sealed space to a value higher than the air pressure outside the sealed space while the component liquid is on the upper surface of the substrate.

12. The substrate processing apparatus further includes an exhaust pipe for sucking gas from the space between the blocking member and the substrate holder, The substrate processing apparatus according to claim 11, wherein the component gas piping continues to supply the component gas to the sealed space when the exhaust pipe is discharging gas from the sealed space, thereby maintaining the air pressure inside the sealed space at a higher value than the air pressure outside the sealed space while the component liquid is on the upper surface of the substrate.

13. The substrate holder includes a spin chuck that rotates the substrate while holding it horizontally with a plurality of chuck pins arranged around the substrate, and a hot plate that heats the substrate while holding it horizontally. The substrate processing apparatus further includes a transfer actuator that moves the substrate between the spin chuck and the hot plate by moving the spin chuck and the hot plate relative to each other. The component liquid nozzle discharges the component liquid toward the upper surface of the substrate held by the spin chuck when the spin chuck is rotating the substrate. The substrate processing apparatus according to claim 11 or 12, wherein the hot plate heats the substrate while holding it, with the component liquid on the upper surface of the substrate and the air pressure inside the sealed space being higher than the air pressure outside the sealed space.

14. The substrate processing apparatus according to claim 13, wherein the relative movement actuator seals the gap between the blocking member and the hot plate, thereby forming a sealed space between the blocking member and the hot plate containing the substrate held on the hot plate while the component liquid is on the upper surface of the substrate.

15. The aforementioned blocking member is A cylindrical portion surrounding the substrate held in the substrate holder with the aforementioned sealed space formed, A rectifier plate positioned above the substrate held in the substrate holder, A plate-shaped portion positioned above the rectifier plate, A substrate processing apparatus according to claim 11 or 12, comprising a gas supply port that supplies the component gas in the upper space, which is the portion of the space inside the cylindrical part between the rectifier plate and the plate-shaped part, to the lower space, which is the portion of the space inside the cylindrical part below the rectifier plate, via a plurality of gas passages that penetrate the rectifier plate vertically.

16. An exhaust pipe that reduces the air pressure inside the sealed space by discharging the component gas from the sealed space, The substrate processing apparatus according to claim 11 or 12, further comprising: a replacement gas pipe for supplying a replacement gas, which is a gas other than the component gas, to the sealed space after the air pressure in the sealed space has decreased, the sealed space is filled with the component gas, and the exhaust pipe is discharging the component gas from the sealed space.

17. A component gas valve that switches between an open state that allows the component gas flowing through the component gas piping to pass through and a closed state that stops the component gas flowing through the component gas piping, A substrate processing apparatus according to claim 11 or 12, further comprising: a control device that, while the gap between the shut-off member and the substrate holder is not sealed, switches the component gas valve to the open state and supplies the component gas to the space between the shut-off member and the substrate holder, thereby discharging the gas in the space between the shut-off member and the substrate holder through the gap, and then causes the relative movement actuator to seal the gap.

18. A guard including an upper end that surrounds the blocking member and the substrate holder in a plan view, A guard lifting actuator that positions the upper end of the guard above the gap when the gap between the blocking member and the substrate holder is not sealed and the component gas is supplied to the space between the blocking member and the substrate holder, The substrate processing apparatus according to claim 17, further comprising an exhaust duct positioned below the gap for discharging gas from within the guard.

19. After supplying the aforementioned component gas to the sealed space, an organic solvent nozzle discharges a liquid organic solvent, which is more volatile than water, toward the upper surface of the substrate held in the substrate holder. The substrate processing apparatus according to claim 11 or 12, further comprising: an exhaust pipe that, while the liquid of the organic solvent is on the upper surface of the substrate, discharges gas from the sealed space to reduce the air pressure inside the sealed space, thereby evaporating the liquid of the organic solvent on the upper surface of the substrate until the upper surface of the substrate is dry.

20. The substrate processing apparatus according to claim 11 or 12, further comprising a chamber housing the blocking member and the substrate holder.

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