Indication device

Abstract

To improve the color deviation of light emitted through the bank in non-emitting regions. [Solution] A display device according to one embodiment includes a substrate in which subpixels including an emitting region and a non-emitting region surrounding the emitting region are defined, a reflective electrode on the substrate, an anode electrode on the reflective electrode of the emitting region, a bank on the anode electrode of the non-emitting region, and a first emitting layer on the anode electrode of the emitting region, wherein the surface height of the bank and the surface height of the first emitting layer are the same.

Description

Technical Field

[0001] This specification relates to a display device.

Background Art

[0002] With the development of the information society, various requirements for display devices that display images have increased, and various types of display devices such as liquid crystal displays (LCDs) and organic light emitting diode displays (OLEDs) are being used.

[0003] Among display devices, organic light emitting diode displays are self-emitting types. Compared with liquid crystal displays (LCDs), they are excellent in viewing angle, contrast ratio, etc., and do not require a separate backlight, so they have the advantages of being lightweight and thin, and being advantageous in power consumption. In addition, organic light emitting diode displays can be driven by a direct current low voltage, have a fast response speed, and particularly have the advantage of low manufacturing cost.

[0004] Recently, the demand for display devices that use such organic light emitting diode displays and require extended reality (AR), virtual reality (VR), or a super high resolution at an equivalent level has been increasing.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The problem to be solved by this specification is to provide a display device that can improve the color deviation of light emitted through a bank in a non-emitting region.

[0006] Another problem to be solved by this specification is to provide a display device that can improve the color deviation of light emitted through a bank in a non-emitting region by designing the surface height of the light emitting layer in the light emitting region and the non-emitting region to be the same.

[0007] Another problem that this specification seeks to solve is to provide a display device that can satisfy microcavity characteristics by adjusting the thickness of the light-emitting layer and the bank.

[0008] Another problem that this specification seeks to solve is to provide a display device that can satisfy microcavity characteristics by adjusting the thickness of the anode electrode.

[0009] Another problem that this specification seeks to solve is to provide a display device in which the seam of the sealing layer is improved in the non-luminescent region.

[0010] The problems addressed herein are not limited to those described above, and other technical problems can be inferred from the following embodiments. [Means for solving the problem]

[0011] A display device comprising: a substrate in which subpixels including an emitting region and a non-emitting region surrounding the emitting region are defined; a reflective electrode on the substrate; an anode electrode on the reflective electrode of the emitting region; a bank on the anode electrode of the non-emitting region; and a first emitting layer on the anode electrode of the emitting region, wherein the surface height of the bank and the surface height of the first emitting layer are the same. [Effects of the Invention]

[0012] According to this embodiment, by designing the surface height of the light-emitting layer in the light-emitting region and the non-light-emitting region to be the same, the color deviation of the light emitted through the bank in the non-light-emitting region can be improved.

[0013] According to the embodiment, the microcavity characteristics can be satisfied by adjusting the thickness of the light-emitting layer and the bank.

[0014] According to this embodiment, the microcavity characteristics can be satisfied by adjusting the thickness of the anode electrode.

[0015] According to an embodiment, in a non-light-emitting region, by minimizing the step at the lower part of the encapsulation layer, the seam (Saem) of the encapsulation layer can be improved.

[0016] According to an embodiment, in order to improve the occurrence of color deviation in a non-light-emitting region, a display device having high color reproducibility can be provided.

[0017] However, the effects obtained in this specification are not limited to the above effects, and other effects not mentioned can be clearly understood by those having ordinary knowledge in the technical field to which this specification belongs from the following description.

Brief Description of the Drawings

[0018] [Figure 1] It is a plan view of a display device according to an embodiment. [Figure 2] It is a cross-sectional view taken along the line A-A' of FIG. 1. [Figure 3] It is a cross-sectional view taken along the line B-B' of FIG. 1. [Figure 4] It is a cross-sectional view of an organic light-emitting element according to FIG. 2. [Figure 5] It is a cross-sectional view of an organic light-emitting element according to a modified example of FIG. 2. [Figure 6] It is an enlarged cross-sectional view of the Q1 region of FIG. 2. [Figure 7] It is a cross-sectional view of a display device according to another embodiment. [Figure 8] It is a cross-sectional view of a display device according to another embodiment. [Figure 9] It is a cross-sectional view of a display device according to another embodiment. [Figure 10] It is a cross-sectional view of a display device according to another embodiment. [Figure 11] It is a cross-sectional view of a display device according to another embodiment. [Figure 12] It is a cross-sectional view of a display device according to another embodiment. [Figure 13] It is a cross-sectional view of a display device according to another embodiment. [Figure 14]It is a cross-sectional view of a display device according to another embodiment.

Embodiments for Carrying Out the Invention

[0019] Hereinafter, embodiments will be described with reference to the drawings. In this specification, when a certain component (or region, layer, part, etc.) is referred to as being "above", "connected to", or "coupled to" another component, it may be directly connected / coupled to the other component, or a third component may be disposed therebetween.

[0020] The same reference numerals refer to the same components. Also, in the drawings, the thickness, ratio, and dimensions of the components are exaggerated for the purpose of an effective explanation of the technical content. "And / or" includes all one or more combinations that can define the related configurations.

[0021] Terms such as first, second, etc. can be used to describe various components, but the above components are not limited by the above terms. The above terms are only used for the purpose of distinguishing one component from another. For example, without departing from the scope of the rights of this embodiment, the first component may sometimes be called the second component, and similarly, the second component may sometimes be called the first component. Singular expressions include plural expressions unless otherwise clearly specified in the context.

[0022] Terms such as "below", "on the lower side", "above", "on the upper side", etc. are used to explain the associative relationship of the configurations shown in the drawings. The above terms are relative concepts and are explained based on the directions shown in the drawings.

[0023] Terms such as "including" or "having" are intended to specify that the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification exist, and should be understood as not precluding the possibility of the existence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0024] Figure 1 is a plan view of a display device according to one embodiment. Figure 2 is a cross-sectional view taken along the line A-A' in Figure 1. Figure 3 is a cross-sectional view taken along the line B-B' in Figure 1.

[0025] Referring to Figures 1 to 3, a display device 1 according to one embodiment includes a substrate 2, a first electrode 4, a light-emitting layer 5, and a cathode electrode 6.

[0026] Multiple subpixels 21, 22, and 23 are formed on the substrate 2. These multiple subpixels 21, 22, and 23 can constitute a single pixel. Multiple pixels may also be formed on the substrate 2.

[0027] The multiple subpixels 21, 22, and 23 include a first subpixel 21, a second subpixel 22, and a third subpixel 23. By arranging the first subpixel 21, the second subpixel 22, and the third subpixel 23 in order, the second subpixel 22 may be positioned adjacent to one side of the first subpixel 21, for example, the right side, and the third subpixel 23 may be positioned adjacent to one side of the second subpixel 22, for example, the right side.

[0028] Throughout this specification, the placement of two subpixels adjacent to each other should be interpreted as meaning that no other subpixels are located between those two subpixels.

[0029] The first subpixel 21 may be configured to emit red (R) light, the second subpixel 22 may be configured to emit green (G) light, and the third subpixel 23 may be configured to emit blue (B) light, but the invention is not limited to this configuration.

[0030] In Figure 1, the pixel is illustrated as containing only three subpixels 21, 22, and 23, but is not limited to this, and the pixel may contain four subpixels. If the pixel contains four subpixels, it may further include a fourth subpixel provided to emit white (W) light.

[0031] Each of the first to third subpixels 21, 22, and 23 may be provided with the same size, but the embodiments herein are not limited thereto. For example, each of the first to third subpixels 21, 22, and 23 may be provided with the same width and the same height. Here, width may mean the lateral direction (first direction DR1) with respect to Figure 1, and height may mean the direction perpendicular to the width (second direction DR2) with respect to Figure 1, but the embodiments herein are not limited thereto.

[0032] Each subpixel 21, 22, and 23 may include light-emitting regions EA1, EA2, and EA3 and non-light-emitting regions NEA1, NEA2, and NEA3. The first subpixel 21 may include the first light-emitting region EA1 and the first non-light-emitting region NEA1 surrounding the first light-emitting region EA1; the second subpixel 22 may include the second light-emitting region EA2 and the second non-light-emitting region NEA2 surrounding the second light-emitting region EA2; and the third subpixel 23 may include the third light-emitting region EA3 and the third non-light-emitting region NEA3 surrounding the third light-emitting region EA3. Each light-emitting region EA1, EA2, and EA3 may be the same as the region exposed from the bank BK of the anode electrodes 41a, 41b, and 41c described later.

[0033] The first electrode 4 is pattern-formed for each subpixel 21, 22, and 23. That is, one first electrode 4 is formed on the first subpixel 21, another first electrode 4 is formed on the second subpixel 22, and yet another first electrode 4 is formed on the third subpixel 23. The first electrode 4 can function as the positive electrode of the display device 1. The first electrode 4 may also include a reflective electrode and an anode electrode. The anode electrode 41 and reflective electrode 42 may be arranged for each subpixel 21, 22, and 23. The anode electrode 41 may include a first anode electrode 41a arranged on the first subpixel 21, a second anode electrode 41b arranged on the second subpixel 22, and a third anode electrode 41c arranged on the third subpixel 23, and the reflective electrode 42 may include a first reflective electrode 42a arranged on the first subpixel 21, a second reflective electrode 42b arranged on the second subpixel 22, and a third reflective electrode 42c arranged on the third subpixel 23.

[0034] A bank (see BK in Figure 2), described later, may be placed on each anode electrode 41a, 41b, and 41c. The bank BK is provided so as to cover the edges of the anode electrodes 41a, 41b, and 41c that are placed on the first to third subpixels 21, 22, and 23, respectively, thereby separating the first subpixel 21, the second subpixel 22, and the third subpixel 23. The display device 1 is equipped with reflective electrodes 42a, 42b, and 42c, each with a different surface height for each subpixel 21, 22, and 23, thereby further improving the light extraction efficiency using microcavity characteristics.

[0035] Microcavity characteristics refer to the property where, when the distance between the reflective electrodes 42a, 42b, and 42c and the cathode electrode 6 becomes an integer multiple of half the wavelength (λ / 2) of the light emitted from the subpixels 21, 22, and 23, constructive interference occurs, amplifying the light. As the reflection and re-reflection processes between the reflective electrodes 42a, 42b, and 42c and the cathode electrode 6 are repeated, the degree of light amplification continues to increase, improving the efficiency of external light extraction.

[0036] The light-emitting layer 5 may be configured to emit white light. For example, the light-emitting layer 5 may be configured as a two-stack structure including a blue light-emitting layer, a yellow-green light-emitting layer, and a charge-generating layer, or as a three-stack structure including a blue light-emitting layer, a green light-emitting layer, a red light-emitting layer, and a charge-generating layer to emit white light, but is not necessarily limited to these, and may be configured as more than three stacks of layers, or as a single stack structure, as long as it can emit white light.

[0037] In one embodiment, the light-emitting layer 5 may be individually arranged within the first to third subpixels 21, 22, and 23, or it may be formed so as not to be provided as a common layer across the entirety of the first to third subpixels 21, 22, and 23. The light-emitting layer 5 will be described in detail later.

[0038] The cathode electrode 6 is for forming an electric field with the anode electrodes 41a, 41b, and 41c, and can function as a negative electrode. The cathode electrode 6 is positioned on the upper surface of the light-emitting layer 5 opposite to the lower surface of the light-emitting layer 5 that the anode electrodes 41a, 41b, and 41c are in contact with, and may be provided as a common layer throughout the first to third subpixels 21, 22, and 23.

[0039] The cathode electrode 6 may be provided as a second electrode in the case of a top emission system, but may be provided as a first electrode containing a reflective material in the case of a bottom emission system. In the case of a top emission system, the cathode electrode 6 may be formed as a translucent electrode in order to improve light extraction efficiency using microcavity characteristics. The display device 1 will be described as an example in which the cathode electrode 6 is formed as a translucent electrode in order to improve light extraction efficiency using microcavity characteristics in a top emission system.

[0040] The color filter layer 9 is provided in each of the first to third subpixels 21, 22, and 23, and is for blocking specific colors from the light emitted from the light-emitting layer 5 of each subpixel 21, 22, and 23. The first color filter 91 provided in the first subpixel 21 may be provided to block light of the remaining colors except for red (R) light. In this case, the first color filter 91 may be provided as a red color filter. The second color filter 92 provided in the second subpixel 22 may be provided to block light of the remaining colors except for green (G) light. In this case, the second color filter 92 may be provided as a green color filter. The third color filter 93 provided in the third subpixel 23 may be provided to block light of the remaining colors except for blue (B) light. In this case, the third color filter 93 may be provided as a blue color filter. However, the embodiments of this specification are not limited thereto.

[0041] The first to third color filters 91, 92, and 93 provided for each of the first to third subpixels 21, 22, and 23 may be the same size as the size of each subpixel, or they may be reduced or enlarged by a certain ratio relative to the size of each subpixel.

[0042] Transistors 31, 32, and 33 may be placed in the non-emitting regions NEA1, NEA2, and NEA3 of each subpixel 21, 22, and 23. For example, transistors 31, 32, and 33 may overlap with reflective electrodes 42a, 42b, and 42c placed on each subpixel 21, 22, and 23. Transistors 31, 32, and 33 may be electrically connected to each reflective electrode 42a, 42b, and 42c.

[0043] The stacked structure of the display device 1 according to one embodiment will be described in detail below.

[0044] A display device 1 according to one embodiment includes a substrate 2, an insulating layer 3, a first electrode 4, a bank BK, an emitting layer 5, a cathode electrode 6, a capping layer 7, a sealing layer 8, and a color filter layer 9.

[0045] Substrate 2 may be a plastic film, a glass substrate, or a semiconductor substrate such as silicon.

[0046] The substrate 2 may be made of a transparent or opaque material. A first subpixel 21, a second subpixel 22, and a third subpixel 23 are provided on the substrate 2. The first subpixel 21 may be configured to emit red (R) light, the second subpixel 22 to emit blue (B) light, and the third subpixel 23 to emit green (G) light.

[0047] In one embodiment, the display device 1 is based on a so-called top emission method in which emitted light is emitted upwards. As a result, the substrate 2 may be made of an opaque material as well as a transparent material. Color filters 91, 92, and 93 may be provided above the first to third subpixels 21, 22, and 23 from which light is emitted, respectively, in order to transmit light of the above-mentioned colors.

[0048] The insulating layer 3 is formed on the substrate 2. The insulating layer 3 may contain an inorganic insulating material. The insulating layer 3 may include a first insulating layer 3a, a second insulating layer 3b on the first insulating layer 3a, and a third insulating layer 3c on the second insulating layer 3b.

[0049] Within the insulating layer 3, circuit elements including multiple thin-film transistors 31, 32, 33 (or CMOS circuits), various signal lines, and capacitors are provided for each sub-pixel 21, 22, 23. Thin-film transistors 31, 32, 33 may be arranged within the first insulating layer 3a. The signal lines may include gate lines, data lines, power lines, and reference lines, and the thin-film transistors 31, 32, 33 may include switching thin-film transistors, driving thin-film transistors, and sensing thin-film transistors. Each sub-pixel 21, 22, 23 is defined by the intersection structure of the gate line and the data line. The insulating layer 3 may surround the thin-film transistors 31, 32, 33.

[0050] Switching thin-film transistors are switched by the gate signal supplied to the gate line and play a role in supplying the data voltage supplied from the data line to the driving thin-film transistor.

[0051] The driving thin-film transistor is switched by the data voltage supplied from the switching thin-film transistor and plays the role of generating data current from the power supply provided by the power line and supplying it to the first electrode 4.

[0052] The sensing thin-film transistor plays a role in sensing the threshold voltage deviation of the driving thin-film transistor, which is a cause of image quality degradation. In response to a sensing control signal supplied from the gate line or a separate sensing line, it supplies current from the driving thin-film transistor to the reference line.

[0053] The capacitor plays the role of maintaining the data voltage supplied to the driving thin-film transistor for one frame, and is connected to the gate and source terminals of the driving thin-film transistor, respectively.

[0054] The first thin-film transistor 31, the second thin-film transistor 32, and the third thin-film transistor 33 are arranged within the first insulating layer 3a for each subpixel 21, 22, and 23. The first thin-film transistor 31 is connected to a first electrode 4 located on the first subpixel 21, and a drive voltage can be applied to emit light of the color corresponding to the first subpixel 21. The first thin-film transistor 31, the second thin-film transistor 32, and the third thin-film transistor 33 may be located on the same thin-film transistor layer, but the embodiments herein are not limited thereto.

[0055] The second thin-film transistor 32 is connected to the first electrode 4 located on the second subpixel 22, and a drive voltage can be applied to it to emit light of the color corresponding to the second subpixel 22.

[0056] The third thin-film transistor 33 is connected to the first electrode 4 located on the third subpixel 23, and a drive voltage can be applied to it to emit light of the color corresponding to the third subpixel 23.

[0057] Each of the first subpixel 21, second subpixel 22, and third subpixel 23 uses transistors 31, 32, and 33 respectively to supply a predetermined current to the light-emitting layer by the data voltage of the data line when a gate signal is input from the gate line. As a result, the light-emitting layers of each of the first subpixel 21, second subpixel 22, and third subpixel 23 can emit light at a predetermined brightness with the predetermined current.

[0058] The insulating layer 3 can protect transistors 31, 32, and 33. The insulating layer 3 may be made of an inorganic insulator, but is not limited thereto, and may also be made of an organic insulator. For example, the insulating layer 3 may be made of an inorganic substance such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (Al2O3), but the embodiments herein are not limited thereto. The first insulating layer 3a, the second insulating layer 3b, and the third insulating layer 3c may be made of an inorganic substance such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (Al2O3), but the embodiments herein are not limited thereto.

[0059] Multiple reflective electrode layers may be arranged on the insulating layer 3. The reflective electrode layers may include a first reflective electrode layer on the first insulating layer 3a, a second reflective electrode layer on the second insulating layer 3b, and a third reflective electrode layer on the third insulating layer 3c. The first reflective electrode layer may include a first reflective electrode 42a and a first connecting electrode 42a', the second reflective electrode layer may include a second reflective electrode 42b and a second connecting electrode 42b', and the third reflective electrode layer may include a third reflective electrode 42c and a third connecting electrode 42c'. The first reflective electrode 42a and the first connecting electrode 42a' may be arranged on the same layer and contain the same material. The second reflective electrode 42b and the second connecting electrode 42b' may be arranged on the same layer and contain the same material. The third reflective electrode 42c and the third connecting electrode 42c' may be arranged on the same layer and contain the same material.

[0060] Each reflective electrode layer may contain a reflective material for reflecting light. For example, the reflective material may be a metal, but is not necessarily limited to that; it may be any other substance that can reflect light. For example, the reflective material may include aluminum (Al) or silver (Ag), but the embodiments described herein are not limited to these.

[0061] Since the reflective electrode 42 is positioned relatively lower than the light-emitting layer 5, it can reflect the light emitted from the light-emitting layer 5 upwards. Here, "upper" means the direction in which the user can perceive the light, and for example, it may mean the side in which the sealing layer 8 or the color filter layer 9 is located. As a result, the first subpixel 21, the second subpixel 22, and the third subpixel 23 have further improved light efficiency compared to when the reflective electrode 42 is not present, and the user can perceive a brighter, i.e., a vividr image through this improved light efficiency.

[0062] In the first light-emitting region EA1 and the first non-light-emitting region NEA1 of the first subpixel 21, the first reflective electrode 42a may be placed on the first insulating layer 3a; in the second light-emitting region EA2 and the second non-light-emitting region NEA2 of the second subpixel 22, the second reflective electrode 42b may be placed on the first insulating layer 3a; and in the third light-emitting region EA3 and the third non-light-emitting region NEA3 of the third subpixel 23, the third reflective electrode 42c may be placed on the first insulating layer 3a. In each non-light-emitting region NEA1, NEA2, and NEA3, the first reflective electrode 42a and the first connecting electrode 42a' may be electrically connected to each transistor 31, 32, and 33.

[0063] A second insulating layer 3b may be placed on the first reflective electrode 42a and the first connecting electrode 42a'. A step difference may be formed in the second insulating layer 3b due to the thickness of the first reflective electrode 42a and the first connecting electrode 42a'.

[0064] A second reflective electrode 42b and a second connecting electrode 42b' may be arranged on the second insulating layer 3b. The second reflective electrode 42b may be placed on the second subpixel 22, and the second connecting electrode 42b' may be placed on the first subpixel 21 and the third subpixel 23, respectively. The second reflective electrode 42b may be connected to the first connecting electrode 42a' in the second non-emitting region NEA2 of the second subpixel 22 via a first contact hole CT1. The second connecting electrode 42b' may be connected to the first reflective electrode 42a and the first connecting electrode 42a' in the non-emitting regions NEA1 and NEA3, respectively, via a first contact hole CT1.

[0065] A third insulating layer 3c may be placed on the second reflective electrode 42b and the second connecting electrode 42b'. A step difference may be formed in the third insulating layer 3c due to the thickness of the second reflective electrode 42b and the second connecting electrode 42b'.

[0066] A third reflective electrode 42c and a third connecting electrode 42c' may be arranged on the third insulating layer 3c. The third reflective electrode 42c may be placed on the third subpixel 23, and the third connecting electrode 42c' may be placed on the first subpixel 21 and the second subpixel 22, respectively. The third reflective electrode 42c may be connected to the second connecting electrode 42b' via a second contact hole CT2 in the third non-emitting region NEA3 of the third subpixel 23. The third connecting electrode 42c' may be connected to the second connecting electrode 42b' and the second reflective electrode 42b via a second contact hole CT2 in the non-emitting regions NEA1 and NEA2, respectively.

[0067] A trench portion TRP may be formed in the insulating layer 3. For example, the trench portion TRP may be formed in the non-emitting regions NEA1, NEA2, and NEA3. As shown in Figures 2 and 3, the trench portion TRP may be formed penetrating a portion of the third insulating layer 3c and the second insulating layer 3b, but the embodiments of this specification are not limited thereto. According to the display device 1 of one embodiment, since a trench portion TRP is formed between adjacent subpixels 21, 22, and 23, the lateral leakage current (LLC) caused by the light-emitting layer 5 between adjacent subpixels 21, 22, and 23 can be improved.

[0068] As shown in Figure 2, the separation distances between the reflective electrodes 42a, 42b, and 42c and the cathode electrode 6 may differ in the light-emitting regions EA1, EA2, and EA3. For example, the separation distance between the first reflective electrode 42a and the cathode electrode 6 may be the largest, followed by the separation distance between the second reflective electrode 42b and the cathode electrode 6, and finally the separation distance between the third reflective electrode 42c and the cathode electrode 6 may be the smallest.

[0069] Thus, the reflective electrodes 42a, 42b, and 42c are formed to have various separation distances (or resonance distances) from the cathode electrode 6. This is because, depending on the separation distance, the light extraction efficiency of different colors can be improved through reflection and re-reflection between the reflective electrodes 42a, 42b, and 42c and the cathode electrode 6. Therefore, the light extraction efficiency of red light can be improved in the first subpixel 21, the light extraction efficiency of green light can be improved in the second subpixel 22, and the light extraction efficiency of blue light can be improved in the third subpixel 23.

[0070] The anode electrode 41 may include a first anode electrode 41a of the first subpixel 21, a second anode electrode 41b of the second subpixel 22, and a third anode electrode 41c of the third subpixel 23. The anode electrodes 41a, 41b, and 41c are arranged in the anode electrode layer, may be in the same layer, and may contain the same material.

[0071] In the third light-emitting region EA3 of the third subpixel 23, the third anode electrode 41c may be directly placed on the third reflective electrode 42c. In the non-light-emitting regions NEA1, NEA2, NEA3 of the first to third subpixels 21 to 23, the anode electrodes 41a, 41b, and 41c may be directly placed on the third connecting electrode 42c' and the third reflective electrode 42c.

[0072] Each of the anode electrodes 41a, 41b, and 41c may be electrically connected to the thin-film transistors 31, 32, and 33 in their respective non-luminescent regions NEA1, NEA2, and NEA3.

[0073] The anode electrodes 41a, 41b, and 41c may contain a material with high light transmittance. For example, the anode electrodes 41a, 41b, and 41c may contain, but are not limited to, ITO, IZO, or TiN.

[0074] Banks BK may be placed on the anode electrodes 41a, 41b, and 41c. The banks BK may be made of an inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (Al2O3), but the embodiments herein are not limited thereto. The banks BK may be placed on non-luminescent regions NEA1, NEA2, and NEA3.

[0075] In the light-emitting regions EA1, EA2, and EA3, the bank BK can define the light-emitting regions EA1, EA2, and EA3 by exposing the upper surfaces of the anode electrodes 41a, 41b, and 41c. As shown in Figure 2, the bank BK can be in contact with the upper surfaces and sides of the anode electrodes 41a, 41b, and 41c. As shown in Figure 3, in the non-light-emitting regions NEA1, NEA2, and NEA3, the bank BK may completely cover the upper surfaces of the anode electrodes 41a, 41b, and 41c, but the embodiments herein are not limited thereto.

[0076] The light-emitting layer 5 may be placed on the anode electrodes 41a, 41b, and 41c. The light-emitting layer 5 may be placed within the light-emitting regions EA1, EA2, and EA3. The light-emitting layer 5 may be in direct contact with the side surfaces of the banks BK of adjacent non-light-emitting regions NEA1, NEA2, and NEA3, but may not be in contact with the top surfaces of the banks BK. The surface height of the light-emitting layer 5 may be the same as the surface height of the adjacent banks BK, but the embodiments described herein are not limited thereto. The light-emitting layer 5 and the banks BK will be described later in Figure 6.

[0077] An organic light-emitting element (OLED) according to one embodiment may include a first electrode 4 (ANO), a cathode electrode 6 (CAT), and a light-emitting layer 5 between the first electrode 4 and the cathode electrode 6.

[0078] The light-emitting layer 5 may be configured to emit white (W) light. For this purpose, the light-emitting layer 5 may include a plurality of stacks that emit light of different colors from each other. Specifically, the light-emitting layer 5 may include a first stack, a second stack, and a charge generation layer (CGL) provided between the first and second stacks.

[0079] The cathode electrode 6 is formed on the light-emitting layer 5. The cathode electrode 6 can function as the negative electrode (cathode) of the display device 1. The cathode electrode 6 is formed on each of the subpixels 21, 22, 23 and between them, as well as on the light-emitting layer 5.

[0080] In one embodiment of the display device 1, the cathode electrode 6 may be made of a translucent electrode in order to realize light-efficient white light using a top-emission method. This allows a microcavity effect to be obtained for each of the first to third subpixels 21, 22, and 23. By repeatedly reflecting and re-reflecting light between the cathode electrode 6 and the reflective electrode 42, a microcavity effect can be obtained, and the light extraction efficiency can be improved.

[0081] On the other hand, since the cathode electrode 6 is formed on the upper surface of the light-emitting layer 5, it can be formed along the profile of the light-emitting layer 5. Since the light-emitting layer 5 is formed along the profile of the first electrode 4 in the light-emitting region, consequently, the cathode electrode 6 can be formed along the profile of the first electrode 4. In addition, the capping layer 7 on the cathode electrode 6 can also be formed along the profile of the cathode electrode 6.

[0082] The capping layer 7 may, but is not limited to, an inorganic insulator. The capping layer 7 is placed on the cathode electrode 6 and can protect the organic light-emitting element OLED.

[0083] The sealing layer 8 is formed on the cathode electrode 6 and serves to prevent external moisture from penetrating the light-emitting layer 5. Such a sealing layer 8 may be made of an inorganic insulator, or it may have a structure in which inorganic and organic insulators are alternately layered, but is not necessarily limited to these.

[0084] The color filter layer 9 is formed on the sealing layer 8. The color filter layer 9 may include, but is not limited to, a first color filter 91 of red (R) provided on the first subpixel 21, a second color filter 92 of green (G) provided on the second subpixel 22, and a third color filter 93 of blue (B) provided on the third subpixel 23.

[0085] Figure 4 is a cross-sectional view of the organic light-emitting element according to Figure 2. Figure 5 is a cross-sectional view of the organic light-emitting element according to a modified example of Figure 2.

[0086] Referring to Figures 1 to 4, the light-emitting layer 5 may include a first stack EL1, a second stack EL2, and a first charge generation layer CGL1 provided on the first electrode 4.

[0087] The first stack EL1 may be provided on the first electrode 4 and have a structure in which a hole injection layer (HIL), a hole transport layer (HTL), a blue (B) light-emitting layer (EML1), and an electron transport layer (ETL) are stacked in that order.

[0088] The first stack EL1 may also be placed between the first subpixel 21 and the second subpixel 22, and between the second subpixel 22 and the third subpixel 23.

[0089] The first charge generation layer CGL1 plays the role of supplying charge to the first stack EL1 and the second stack EL2. The first charge generation layer CGL1 may include an N-type charge generation layer for supplying electrons to the first stack EL1 and a P-type charge generation layer for supplying holes to the second stack EL2. The N-type charge generation layer may contain a metallic substance as a dopant.

[0090] The second stack EL2 is provided on the first stack EL1 and may have a structure in which a hole transport layer HTL, a yellow-green (YG) emitting layer EML2 (Emitting Layer), an electron transport layer ETL, and an electron injection layer EIL (Electron Injecting Layer) are stacked in that order.

[0091] The second stack EL2 may also be placed between the first subpixel 21 and the second subpixel 22, and between the second subpixel 22 and the third subpixel 23.

[0092] As a result, the light-emitting layer 5 may be provided as a common layer throughout the entirety of the first to third subpixels 21, 22, and 23, as shown in Figures 2 and 3.

[0093] As shown in Figure 5, the light-emitting layer 5' of an organic light-emitting element OLED according to one embodiment may include a first stack EL1, a second stack EL2, a third stack EL3, a first charge generation layer CGL1 between the first stack EL1 and the second stack EL2, and a second charge generation layer CGL2 between the second stack EL2 and the third stack EL3, all provided on the first electrode 4.

[0094] The first stack EL1 is provided on the first electrode 4 and may have a structure in which a hole injection layer (HIL), a hole transport layer (HTL), a blue (B) light-emitting layer (EML1), and an electron transport layer (ETL) are stacked in that order.

[0095] The first stack EL1 may also be placed between the first subpixel 21 and the second subpixel 22, between the second subpixel 22 and the third subpixel 23, i.e., on bank BK.

[0096] The first charge generation layer CGL1 plays the role of supplying charge to the first stack EL1 and the second stack EL2. The first charge generation layer CGL1 may be composed of an N-type charge generation layer for supplying electrons to the first stack EL1 and a P-type charge generation layer for supplying holes to the second stack EL2. The N-type charge generation layer may be composed of a metallic material as a dopant.

[0097] The second stack EL2 is provided on the first stack EL1 and may have a structure in which a hole transport layer HTL, a green (G) emitting layer EML2 (Emitting Layer), and an electron transport layer ETL are stacked in that order.

[0098] The second stack EL2 may also be placed between the first subpixel 21 and the second subpixel 22, between the second subpixel 22 and the third subpixel 23, i.e., on bank BK.

[0099] The second charge generation layer CGL2 plays the role of supplying charge to the second stack EL2 and the third stack EL3. The second charge generation layer CGL2 may be composed of an N-type charge generation layer for supplying electrons to the second stack EL2 and a P-type charge generation layer for supplying holes to the third stack EL3. The N-type charge generation layer may be composed of a metallic material as a dopant.

[0100] The third stack EL3 is provided on the second stack EL2 and may have a structure in which a hole transport layer HTL, a red (Red:R) emitting layer EML3 (Emitting Layer), an electron transport layer ETL, and an electron injection layer EIL (Electron Injecting Layer) are stacked in that order.

[0101] As shown in Figures 1 to 5, the charge generation layers CGL1 and CGL2 may also be arranged between the first subpixel 21 and the second subpixel 22, and between the second subpixel 22 and the third subpixel 23. On the other hand, in the display device 1 according to one embodiment, the light-emitting layer 5 is also arranged between each subpixel 21, 22, and 23, so when a subpixel emits light, side leakage current may be generated in adjacent subpixels 21, 22, and 23 through the charge generation layers CGL1 and CGL2. However, trenches TRP may be formed between the subpixels 21, 22, and 23. The trenches TRP increase the length of the light-emitting layer 5 at the boundaries of the subpixels 21, 22, and 23, and lengthen the current path. This prevents the generation of side leakage current. Furthermore, the light-emitting layer 5 can be separated from the trenches TRP, preventing side leakage current in advance.

[0102] Referring again to Figures 2 and 3, the cathode electrode 6 is formed on the light-emitting layer 5, the sealing layer 8 is formed on the cathode electrode 6, and the color filter layer 9 is formed on the sealing layer 8.

[0103] Although not shown in the diagram, a black matrix may be provided between the first to third color filters 91, 92, and 93 to prevent color mixing between subpixels.

[0104] Figure 6 is an enlarged cross-sectional view of the Q1 region in Figure 2.

[0105] Referring to Figures 2 and 6, according to one embodiment of the display device 1, the thickness T1 of the light-emitting layer 5 and the thickness T2 of the bank BK may be the same. As a result, the surface height of the bank BK in the first non-light-emitting region NEA1 and the surface height of the light-emitting layer 5 in the first light-emitting region EA1 may be the same. In one embodiment, the surface heights of the light-emitting layer 5 and the bank BK in the region where they are in contact with each other may be the same.

[0106] The sides (or outer surfaces) of the bank BK may be hydrophobic. For example, the sides of the bank BK may have a material that repels the light-emitting layer 5. However, the embodiments of this specification are not limited thereto, and the bank BK itself may contain a material that repels the light-emitting layer 5.

[0107] The light-emitting layer 5 may be coated by an inkjet method on (or inside) a bank BK containing a material that repels the light-emitting layer 5. Since the light-emitting layer 5 and the bank BK form a repulsive force against each other, the light-emitting layer 5 can be positioned inside the bank BK without overflowing outside the bank BK. In some embodiments, the surface of the light-emitting layer 5 may be convex in the upward direction. In some embodiments, the light-emitting layer 5 may be in direct contact with the lower part of the inner surface of the bank BK, with the upper part exposed.

[0108] If the light-emitting layer 5 extends to the first non-light-emitting region NEA1, the light-emitting layer 5 in the first non-light-emitting region NEA1 can have a higher surface height than the first light-emitting region EA1 due to the step formed by the first anode electrode 41a. Also, due to the step formed by the first anode electrode 41a, the light-emitting layer 5 can have different thicknesses in the first non-light-emitting region NEA1 and the first light-emitting region EA1. For example, if the light-emitting layer 5 has different thicknesses in the first non-light-emitting region NEA1 and the first light-emitting region EA1, differences in brightness and color purity (or color deviation) may occur depending on the region, even within the same subpixel. However, according to the display device 1 of one embodiment, since the light-emitting layer 5 is arranged only in the first light-emitting region EA1 by the bank BK, there is an advantage that differences in brightness and color purity can be improved.

[0109] The following describes a display device according to another embodiment. In the following description of the embodiments, detailed explanations and redundant explanations will be omitted for configurations that are the same as or similar to those described in Figures 1 to 6.

[0110] Figure 7 is a cross-sectional view of a display device according to another embodiment.

[0111] Referring to Figure 7, the light-emitting layer 5_1 of the display device 1_1 according to this embodiment differs from the display device 1 according to Figure 2 in that it may include a first light-emitting layer 5a and a second light-emitting layer 5b on the first light-emitting layer 5a.

[0112] More specifically, the first light-emitting layer 5a in Figure 7 may be located in the same region as the light-emitting layer 5 in Figure 2, and the second light-emitting layer 5b may be located across the entire subpixels 21, 22, and 23. In other words, the second light-emitting layer 5b may also extend into the non-light-emitting regions NEA1, NEA2, and NEA3.

[0113] The first light-emitting layer 5a may include at least one of the components located at the bottom of the first stack EL1 described in Figure 4, which consists of a hole injection layer (HIL), a hole transport layer (HTL), a blue (B) light-emitting layer (EML1), an electron transport layer (ETL), a first charge generation layer (CGL1), a hole transport layer (HTL), a yellow-green (YG) light-emitting layer (EML2), an electron transport layer (ETL), and an electron injection layer (EIL). The second light-emitting layer 5b may include the remaining components other than the first light-emitting layer 5a. In this specification, only the case where the light-emitting layer 5_1 consists of two stacks is given as an example, but it is not limited to this, and the light-emitting layer 5_1 may consist of three stacks.

[0114] According to this embodiment, since the first light-emitting layer 5a is positioned at the same surface height as the bank BK, the first light-emitting layer 5a and the second light-emitting layer 5b positioned on the bank BK can maintain the same surface height in the region overlapping with the anode electrodes 41a, 41b, and 41c. That is, the surface height of the second light-emitting layer 5b in the light-emitting regions EA1, EA2, and EA3 and the surface height of the second light-emitting layer 5b in the non-light-emitting regions NEA1, NEA2, and NEA3 may be the same as each other. Therefore, there is an advantage in that the occurrence of differences in brightness and color purity can be improved.

[0115] Other explanations have already been given in Figures 1 through 6, so detailed explanations will be omitted below. Figure 8 is a cross-sectional view of a display device according to another embodiment.

[0116] Referring to Figure 8, the display device 1_2 according to this embodiment differs from the display device 1_1 shown in Figure 7 in that the second light-emitting layer 5b has voids BB formed in the non-light-emitting regions NEA1, NEA2, and NEA3.

[0117] More specifically, unlike the first light-emitting layer 5a, the second light-emitting layer 5b is positioned throughout the subpixels 21, 22, and 23, so in the trench portion TRP, an additional void BB may be formed inside the second light-emitting layer 5b.

[0118] Other explanations have already been given in Figure 7, so detailed explanations will be omitted below.

[0119] Figure 9 is a cross-sectional view of a display device according to another embodiment.

[0120] Referring to Figure 9, the display device 1_3 according to this embodiment differs from the display device 1 in Figure 2 in that it may further include residual material RP disposed inside the trench portion TRP.

[0121] The residual RP may contain the same material as the light-emitting layer 5. In this embodiment, the light-emitting layer 5 may be coated over the entire surface of the bank BK containing a material that repels the light-emitting layer 5, and then disposed only within the bank BK by thermal irradiation. However, during the thermal irradiation process, some of the residual RP of the light-emitting layer 5 may remain in the trench TRP.

[0122] Other explanations have already been given in Figure 2, so detailed explanations will be omitted below.

[0123] Figure 10 is a cross-sectional view of a display device according to another embodiment.

[0124] Referring to Figure 10, the display device 1_4 according to this embodiment differs from the display device 1 shown in Figure 2 in that the surface height of bank BK_1 and the surface heights of the anode electrodes 41a, 41b, and 41c of the light-emitting regions EA1, EA2, and EA3 are the same.

[0125] More specifically, the bank BK_1 located in each non-emitting region NEA1, NEA2, NEA3 may be in direct contact with the sides of adjacent anode electrodes 41a, 41b, 41c and may have the same surface height as the adjacent anode electrodes 41a, 41b, 41c. The bank BK_1 located in each non-emitting region NEA1, NEA2, NEA3 does not have to be located on the upper surface of adjacent anode electrodes 41a, 41b, 41c. The bank BK_1 may extend into the trench portion TRP and be in direct contact with the inner surface of the third insulating layer 3c, the inner surface of the second insulating layer 3b, and the upper surface of the first insulating layer 3a within the trench portion TRP.

[0126] Therefore, the light-emitting layer 5_2 positioned on the upper surfaces of the anode electrodes 41a, 41b, and 41c, and on the upper surface of the bank BK_1 adjacent to the anode electrodes 41a, 41b, and 41c, can have the same surface height. That is, the surface height of the light-emitting layer 5_2 positioned on the upper surfaces of the anode electrodes 41a, 41b, and 41c, and the surface height of the light-emitting layer 5_2 positioned on the upper surface of the bank BK_1 adjacent to the anode electrodes 41a, 41b, and 41c, may be the same. On the other hand, since the third anode electrode 41c in Figure 10 is positioned directly on the upper surface of the third reflective electrode 42c, the bank BK_1 may be in direct contact with the side surface of the third anode electrode 41c and the side surface of the third reflective electrode 42c. In some embodiments, in the third non-light-emitting region NEA3 of the third subpixel 23, the thickness of the bank BK_1 may be the same as the sum of the thickness of the third anode electrode 41c and the thickness of the third reflective electrode 42c.

[0127] According to this embodiment, the light-emitting layer 5_2, which is located on the upper surfaces of the anode electrodes 41a, 41b, and 41c, and on the upper surface of the bank BK_1 adjacent to the anode electrodes 41a, 41b, and 41c, has the same surface height, which has the advantage of improving the occurrence of differences in brightness and color purity.

[0128] Furthermore, since the sealing layer 8 above the light-emitting layer 5_2 is also arranged substantially flat in the non-light-emitting regions NEA1, NEA2, and NEA3, it is possible to improve the occurrence of seams (or cracks) inside the sealing layer 8 in the non-light-emitting regions NEA1, NEA2, and NEA3.

[0129] Other explanations have already been given in Figure 2, so detailed explanations will be omitted below.

[0130] Figure 11 is a cross-sectional view of a display device according to another embodiment.

[0131] Referring to Figure 11, the bank BK_2 of the display device 1_5 according to this embodiment differs from the display device 1_4 in Figure 10 in that it does not extend into the trench portion TRP and does not overlap with the trench portion TRP.

[0132] Other explanations have already been given in Figure 10, so detailed explanations will be omitted below.

[0133] Figure 12 is a cross-sectional view of a display device according to another embodiment.

[0134] Referring to Figure 12, the display device 1_6 according to this embodiment differs from the display device 1_4 in Figure 10 in that it further includes a step compensation section DCP between the capping layer 7 and the sealing layer 8.

[0135] More specifically, the step compensation section DCP may be located in the non-emissive regions NEA1, NEA2, and NEA3, and may be in direct contact with the capping layer 7 and the sealing layer 8. The step compensation section DCP may contain an organic substance so that it can compensate for any steps formed below it in the non-emissive regions NEA1, NEA2, and NEA3. For example, the step compensation section DCP may contain ink, but the embodiments of this specification are not limited thereto. In the non-emissive regions NEA1, NEA2, and NEA3, the surface height of the step compensation section DCP may be the same as the surface height of the capping layer 7, but the embodiments of this specification are not limited thereto.

[0136] According to this embodiment, the step compensation section DCP ensures that the upper sealing layer 8 is arranged substantially flat in the non-luminescent regions NEA1, NEA2, and NEA3, thereby improving the occurrence of seams (or cracks) inside the sealing layer 8 in the non-luminescent regions NEA1, NEA2, and NEA3.

[0137] Figure 13 is a cross-sectional view of a display device according to another embodiment.

[0138] Referring to Figure 13, the display device 1_7 according to this embodiment differs from the display device 1 shown in Figure 2 in that the thickness T2a, T2b, T2c of the bank BK and the thickness T1a, T1b, T1c of the light-emitting layer 5 can be adjusted.

[0139] More specifically, in each subpixel 21, 22, and 23, the thicknesses T2a, T2b, and T2c of the bank BK and the thicknesses T1a, T1b, and T1c of the light-emitting layer 5 are adjusted and may differ from each other. For example, the thickness T1a of the first light-emitting layer of the first subpixel 21, the thickness T1b of the first light-emitting layer of the second subpixel 22, and the thickness T1c of the first light-emitting layer of the third subpixel 23 may differ from each other. Also, the thickness T2a of the bank of the first subpixel 21, the thickness T2b of the bank of the second subpixel 22, and the thickness T2c of the bank of the third subpixel 23 may differ from each other.

[0140] In this embodiment as well, in the same subpixels 21, 22, and 23, the thicknesses T2a, T2b, and T2c of the bank BK and the thicknesses T1a, T1b, and T1c of the light-emitting layer 5 are the same, and in the same subpixels 21, 22, and 23, the surface height of the bank BK and the surface height of the light-emitting layer 5 may be designed to be the same.

[0141] According to this embodiment, there is an advantage in that the microcavity characteristics of each subpixel 21, 22, and 23 can be precisely adjusted by adjusting the thickness T2a, T2b, and T2c of the bank BK and the thickness T1a, T1b, and T1c of the light-emitting layer 5.

[0142] Other explanations have already been given in Figure 2, so detailed explanations will be omitted below.

[0143] Figure 14 is a cross-sectional view of a display device according to another embodiment.

[0144] Referring to Figure 14, the display device 1_8 according to this embodiment differs from the display device 1_7 in Figure 13 in that the thicknesses T3a, T3b, and T3c of the anode electrodes 41a, 41b, and 41c can be adjusted.

[0145] More specifically, the thicknesses T3a, T3b, and T3c of each anode electrode 41a, 41b, and 41c may be different from each other, and the thickness may increase in the order of the first anode electrode 41a, the second anode electrode 41b, and the third anode electrode 41c.

[0146] Furthermore, the thicknesses T2a, T2b, and T2c of the bank BK and the thicknesses T1a, T1b, and T1c of the light-emitting layer 5 may decrease in the order of the first anode electrode 41a, the second anode electrode 41b, and the third anode electrode 41c.

[0147] According to this embodiment, there is an advantage in that the microcavity characteristics of each subpixel 21, 22, and 23 can be precisely adjusted by adjusting the thicknesses T3a, T3b, and T3c of the anode electrodes 41a, 41b, and 41c, the thicknesses T2a, T2b, and T2c of the bank BK, and the thicknesses T1a, T1b, and T1c of the light-emitting layer 5. Book

[0148] The display devices according to the various embodiments of the specification can be described as follows.

[0149] Various embodiments of this specification include a display device comprising a substrate in which subpixels are defined including an emitting region and a non-emitting region surrounding the emitting region; a reflective electrode on the substrate; an anode electrode on the reflective electrode of the emitting region; a bank on the anode electrode of the non-emitting region; and a first emitting layer on the anode electrode of the emitting region, wherein the surface height of the bank and the surface height of the first emitting layer are the same.

[0150] In the various embodiments of this specification, the thickness of the bank and the thickness of the first light-emitting layer may be the same.

[0151] In the various embodiments of this specification, the outer surface of the bank may be hydrophobic.

[0152] Display devices according to various embodiments of this specification further include a second light-emitting layer on the first light-emitting layer, wherein the second light-emitting layer is arranged across the light-emitting region and the non-light-emitting region, and the surface of the light-emitting layer may be flat.

[0153] In the various embodiments of this specification, the second light-emitting layer may have voids in the non-light-emitting region.

[0154] Display devices according to various embodiments of this specification further include at least one insulating layer between the reflective electrode and the anode electrode, the insulating layer may have trenches formed in the thickness direction that are recessed in the non-emitting region.

[0155] In the various embodiments of this specification, the display device further contains a residue in the trench, and the residue may contain the same substance as the first light-emitting layer.

[0156] In the various embodiments of this specification, the display device includes a first subpixel, a second subpixel, and a third subpixel, wherein the thickness of the first light-emitting layer of the first subpixel, the thickness of the first light-emitting layer of the second subpixel, and the thickness of the first light-emitting layer of the third subpixel may be different from each other.

[0157] In the various embodiments of this specification, the thickness of the first subpixel bank, the thickness of the second subpixel bank, and the thickness of the third subpixel bank may differ from one another.

[0158] In the various embodiments of this specification, the display device includes a first subpixel, a second subpixel, and a third subpixel, wherein the thickness of the anode electrode of the first subpixel, the thickness of the anode electrode of the second subpixel, and the thickness of the anode electrode of the third subpixel may be different from each other.

[0159] Various embodiments of this specification include a display device comprising a substrate in which subpixels are defined, including an emitting region and a non-emitting region surrounding the emitting region; a reflective electrode on the substrate; an anode electrode on the reflective electrode of the emitting region; a bank on the anode electrode of the non-emitting region; and an emitting layer on the anode electrode of the emitting region, wherein the surface height of the bank and the surface height of the anode electrode of the emitting region are the same.

[0160] The display devices according to various embodiments of this specification further include at least one insulating layer between the reflective electrode and the anode electrode, the insulating layer may be recessed in the thickness direction in the non-emitting region.

[0161] In the various embodiments of this specification, the bank does not have to overlap with the trench portion.

[0162] In various embodiments of this specification, the display device may be arranged such that the bank extends into the trench and the light-emitting layer is in direct contact with the side surface of the bank in the trench.

[0163] Various embodiments of the Specified Display Devices include a substrate in which subpixels are defined, including an emitting region and a non-emitting region surrounding the emitting region; a reflective electrode on the substrate; at least one insulating layer on the reflective electrode, wherein a trench portion recessed in the thickness direction is formed in the non-emitting region; an anode electrode on the at least one insulating layer; a bank on the anode electrode in the non-emitting region; an emitting layer on the anode electrode in the emitting region; a cathode electrode on the emitting layer; a capping layer on the cathode electrode; and a step compensation portion on the capping layer in the non-emitting region.

[0164] In the various embodiments of this specification, the display device may include an organic substance in the step compensation section.

[0165] In the various embodiments of this specification, the surface height of the step compensation portion in the non-emitting region may be the same as the surface height of the capping layer.

[0166] While embodiments have been described above with reference to the attached drawings, it will be understood that the above-described technical configuration can be implemented in other specific forms by those skilled in the art in which this specification pertains, without altering the technical idea or essential features. Therefore, the above-described embodiments should be understood to be illustrative and not limiting in all respects. Furthermore, the scope of the embodiments is indicated by the claims, which will be described later, rather than by the detailed description. In addition, all modifications or altered forms derived from the meaning and scope of the claims, and their equivalent concepts, should be interpreted as being included within the scope of the embodiments. [Explanation of symbols]

[0167] 1:Display device 2: Circuit board 3: Insulating layer 4: 1st electrode 5: Emitting layer 6: Cathode electrode 7: Capping layer 8: Sealing layer 9: Color filter layer BK: Bank

Claims

1. A substrate in which subpixels including an emitting region and a non-emitting region surrounding the emitting region are defined, The reflective electrode on the substrate, The anode electrode on the reflecting electrode of the light-emitting region, The bank on the anode electrode in the non-emitting region, The light-emitting region includes a first light-emitting layer on the anode electrode, A display device in which the surface height of the bank and the surface height of the first light-emitting layer are the same.

2. The display device according to claim 1, wherein the thickness of the bank and the thickness of the first light-emitting layer are the same.

3. The display device according to claim 1, wherein the outer surface of the bank is hydrophobic.

4. The display device according to claim 1, further comprising a second light-emitting layer on the first light-emitting layer, wherein the second light-emitting layer is arranged across the light-emitting region and the non-light-emitting region, and the surface of the second light-emitting layer is flat.

5. The display device according to claim 4, wherein the second light-emitting layer has a void in the non-light-emitting region.

6. The display device according to claim 1, further comprising at least one insulating layer between the reflective electrode and the anode electrode, wherein the insulating layer has trench portions recessed in the thickness direction in the non-emitting region.

7. The display device according to claim 6, wherein a residue is further disposed in the trench portion, and the residue contains the same substance as the first light-emitting layer.

8. The display device according to claim 1, wherein the subpixels include a first subpixel, a second subpixel, and a third subpixel, and the thickness of the first light-emitting layer of the first subpixel, the thickness of the first light-emitting layer of the second subpixel, and the thickness of the first light-emitting layer of the third subpixel are different from each other.

9. The display device according to claim 8, wherein the thickness of the bank of the first subpixel, the thickness of the bank of the second subpixel, and the thickness of the bank of the third subpixel are different from each other.

10. The display device according to claim 1, wherein the subpixels include a first subpixel, a second subpixel, and a third subpixel, and the thickness of the anode electrode of the first subpixel, the thickness of the anode electrode of the second subpixel, and the thickness of the anode electrode of the third subpixel are different from each other.

11. A substrate in which subpixels including an emitting region and a non-emitting region surrounding the emitting region are defined, The reflective electrode on the substrate, The anode electrode on the reflecting electrode of the light-emitting region, The bank on the anode electrode in the non-emitting region, The light-emitting region includes a light-emitting layer on the anode electrode, A display device in which the surface height of the bank and the surface height of the anode electrode in the light-emitting region are the same.

12. The display device according to claim 11, further comprising at least one insulating layer between the reflective electrode and the anode electrode, wherein the insulating layer has trench portions recessed in the thickness direction in the non-emitting region.

13. The display device according to claim 12, wherein the bank does not overlap with the trench portion.

14. The display device according to claim 12, wherein the bank extends and is arranged in the trench portion, and the light-emitting layer is in direct contact with the side surface of the bank in the trench portion.

15. A substrate in which subpixels including an emitting region and a non-emitting region surrounding the emitting region are defined, The reflective electrode on the substrate, At least one insulating layer on the reflective electrode, wherein a trench portion recessed in the thickness direction is formed in the non-luminescent region, The anode electrode on the at least one insulating layer, The bank on the anode electrode in the non-emitting region, The light-emitting layer on the anode electrode of the light-emitting region, The cathode electrode on the light-emitting layer, The capping layer on the cathode electrode, A display device comprising the non-luminescent region and a step compensation portion on the capping layer.

16. The display device according to claim 15, wherein the step compensation part contains an organic substance.

17. The display device according to claim 15, wherein in the non-luminescent region, the surface height of the step compensation portion is the same as the surface height of the capping layer.

Images