Semiconductor equipment
By employing a bottom-gate transistor structure and precisely controlling the thickness of the insulating layer in display devices, the problems of numerous manufacturing steps and performance degradation have been solved, enabling efficient and low-cost semiconductor device manufacturing and improving the performance of display devices.
JP7885409B2Active Publication Date: 2026-07-06SEMICON ENERGY LAB CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Filing Date
- 2025-06-26
- Publication Date
- 2026-07-06
Smart Images
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Abstract
To manufacture a semiconductor device with fewer steps.SOLUTION: A semiconductor device comprises: a transistor; and a pixel electrode. The transistor comprises: a first gate electrode; a first insulation layer on the first gate electrode; a semiconductor layer on the first insulation layer; a second insulation layer on the semiconductor layer; and a second gate electrode on the second insulation layer. The first gate electrode comprises a region overlapping with the semiconductor layer via the first insulation layer. The second gate electrode comprises a region overlapping with the semiconductor layer via the second insulation layer. The pixel electrode is provided on the second insulation layer. A first region is at least a part of a region among regions where at least a part of the second gate electrode overlaps with at least a part of the semiconductor layer. A second region is at least a part of a region among regions where the pixel electrode is provided. The second insulation layer in the first region is thinner than the second insulation layer in the second region.SELECTED DRAWING: Figure 1
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Citation Information
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