Display device and method for manufacturing the same

Abstract

A rear surface (b) of a display panel (DP) having a bending part (B) provided so as to extend in one direction (Y) in a terminal-side frame region (Ft) between a terminal part (T) and a display region (D) is provided with: a film (40) provided so as to cover the rear surface (b); and a rear-surface-side slit (U) which is provided in a band shape in the film (40) so as to overlap at least a part of the bending part (B) in a plan view, and which extends to both ends of the terminal-side frame region (Ft) in the direction (Y), in which the bending part (B) extends. In both ends, a pair of concave notches (Na) are formed by forming indentations in the display panel (DP).

Description

Technical Field

[0001] The present invention relates to a display device and a method for manufacturing the same.

Background Art

[0002] In recent years, as a display device replacing a liquid crystal display device, a self-emitting organic EL display device using an organic electroluminescence (hereinafter also referred to as "EL") element has been attracting attention. In an organic EL display device, a flexible organic EL display device in which an organic EL element or the like is formed on a flexible resin substrate has been proposed. Here, in an organic EL display device, for example, a frame region is provided around a display region for performing image display, and a narrower frame is desired to reduce the area occupied by the frame region in a plan view. Therefore, in a flexible organic EL display device, for example, it has been proposed to reduce the frame width by bending the frame region on the terminal portion side where a plurality of terminals are arranged.

[0003] For example, in Patent Document 1, a flexible wiring board used for driving input of a flat display device or the like is composed of a flexible base film and a conductive pattern formed thereon, and a thick portion for bending is provided. As the flexible wiring board is bent at the location of the thick portion for bending, a flexible wiring board in which the thick portion for bending is bent has been proposed. In this flexible wiring board, convex formation is realized by applying resin to the thick portion for bending.

[0004] Further, in Patent Document 2, a display device including a curved display panel and a flexible printed board connected to one surface of the display panel has been proposed, and a protective member is provided on a part of the substrate body constituting the flexible printed board. In this display device, disconnection of the wiring is suppressed by providing a protective member at the bending portion.

Prior Art Documents

Patent Documents

[0005] [Patent Document 1] Japanese Patent Publication No. 2002-141620 [Patent Document 2] Japanese Patent Publication No. 2021-192433 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] Incidentally, in a flexible organic EL display device having a foldable portion in the frame area, a structure has been proposed in which a film is attached to the surface that becomes the inside when folded (the back surface of the display panel that constitutes the device), and the portion of the film corresponding to the foldable portion (the base of the terminal portion) is removed in a slit shape by laser slitting or the like.

[0007] As a method for manufacturing a flexible organic EL display device having the above structure, for example, laser slitting of the above portion of the film, laser cutting (outer shape processing) to make the outer shape of the display panel a desired shape, and bending around the bending portion are performed. In the conventional structure, the dividing cross-section of the bending portion (slit portion) was straight (flat), but with the further narrowing of the bezel of the display panel (display), the dividing cross-section has become an R surface, and the bending portion (slit portion) has become closer to the display area, resulting in a structure in which the R portion at the base of the terminal portion and the slit portion overlap.

[0008] In this structure, the strength near the R-shaped section at the base of the terminal is weakened, making it easier for forces during various processing and bending operations to be transmitted to the R-shaped section. As a result, tensile stress (stress) is applied to the constriction of the R-shaped section in the thickness direction of the display panel, which may cause cracks in the resin substrate (near the R-shaped section) that makes up the display panel, potentially inducing wire breakage. There is room for improvement.

[0009] The present invention has been made in view of the above, and its purpose is to suppress disconnection of wiring at the terminal portion of the frame area caused by the narrowing of the frame area. [Means for solving the problem]

[0010] To achieve the above objective, the present invention provides a display panel comprising a display area, a frame area provided around the display area, a terminal portion provided at one end of the frame area, and a bent portion provided in one direction in the terminal-side frame area between the terminal portion and the display area, a film provided to cover the back surface of the display panel, and a back-side slit provided in the film in a strip shape so as to overlap at least a part of the bent portion in a plan view, and extending to both ends of the terminal-side frame area in the direction in which the bent portion extends, characterized in that a pair of notches are formed at both ends, cutting out the display panel and recessing inward.

[0011] A method for manufacturing a display device according to the present invention comprises a display panel having a display area, a frame area provided around the display area, a terminal portion provided at one end of the frame area, and a bent portion provided in one direction in the terminal-side frame area between the terminal portion and the display area, a film provided to cover the back surface of the display panel, and a back-side slit provided in the film in a strip shape so as to overlap at least a part of the bent portion in a plan view, and extending to both ends of the terminal-side frame area in the direction in which the bent portion extends, wherein the display panel is composed of The method comprises a film application step of applying the film to the back surface of an unprocessed original panel; a back surface slit formation step of forming the back surface slit by irradiating the film with laser light multiple times parallel to the direction in which the bent portion extends; and a panel outline processing step of forming the display panel with an outline cut by irradiating the original panel with the back surface slit with laser light and performing laser cutting, wherein in the panel outline processing step, a pair of notches are formed on both ends by irradiating the display panel with laser light to cut out the panel and create an inward recess. [Effects of the Invention]

[0012] According to the present invention, it is possible to suppress disconnection of wiring at the terminal portion of the frame area caused by narrowing the frame area. [Brief explanation of the drawing]

[0013] [Figure 1] Figure 1 is a plan view showing a schematic configuration of the surface side of the display panel of an organic EL display device according to the first embodiment of the present invention. [Figure 2] Figure 2 is a plan view showing the detailed configuration of the display area of ​​an organic EL display device according to the first embodiment of the present invention. [Figure 3] Figure 3 shows a plan view of the back side (the side that faces inward when folded) of the display panel in the frame region of an organic EL display device according to the first embodiment of the present invention, and an enlarged plan view of the area around the notch. [Figure 4]FIG. 4 is a cross-sectional view of the organic EL display device according to the first embodiment of the present invention along the V-V line in FIG. 3 in a bent state. [Figure 5] FIG. 5 is a cross-sectional view of the frame area of the organic EL display device according to the first embodiment of the present invention along the V-V line in FIG. 3. [Figure 6] FIG. 6 is an enlarged plan view showing a first modification of the notch, and is a view corresponding to FIG. 3. [Figure 7] FIG. 7 is an enlarged plan view showing a second modification of the notch, and is a view corresponding to FIG. 3. [Figure 8] FIG. 8 is an enlarged plan view showing a third modification of the notch, and is a view corresponding to FIG. 3. [Figure 9] FIG. 9 is a cross-sectional view of the display area of the organic EL display device according to the first embodiment of the present invention. [Figure 10] FIG. 10 is an equivalent circuit diagram showing the pixel circuit of the organic EL display device according to the first embodiment of the present invention. [Figure 11] FIG. 11 is a cross-sectional view showing the organic EL layer constituting the organic EL display device according to the first embodiment of the present invention. [Figure 12] FIG. 12 is a perspective view illustrating a backside slit forming step in the manufacturing method of the organic EL display device according to the first embodiment of the present invention. [Figure 13] FIG. 13 illustrates a panel outer shape processing step in the manufacturing method of the organic EL display device according to the first embodiment of the present invention, and is a perspective view when dividing the outer shape of the original panel with an unprocessed outer shape. [Figure 14] FIG. 14 illustrates a panel outer shape processing step in the manufacturing method of the organic EL display device according to the first embodiment of the present invention, and is a perspective view when forming a notch. [Figure 15] FIG. 15 is a plan view of the back surface (the surface that becomes the inner side when folded) side of the display panel in the frame area of the organic EL display device according to the second embodiment of the present invention and an enlarged plan view around the notch, and is a view corresponding to FIG. 3.

Embodiments for Carrying Out the Invention

[0014] Hereinafter, embodiments of the present invention will be described in detail based on the drawings. Note that the present invention is not limited to the following embodiments.

[0015] <<First Embodiment>> Figs. 1 to 14 show a first embodiment of a display device according to the present invention. In each of the following embodiments, an organic EL display device including an organic EL element will be exemplified as a display device including a light-emitting element. Here, Fig. 1 is a plan view showing a schematic configuration of the front f side of a display panel DP of the organic EL display device 50a of the present embodiment. Fig. 2 is a plan view showing a detailed configuration of a display area D of the organic EL display device 50a. Fig. 3 is a plan view of the back b (the surface that becomes the inner side when bent) side of the display panel DP in the frame area F of the organic EL display device 50a and an enlarged plan view around the notch Na. Fig. 4 is a cross-sectional view of the bent state of the organic EL display device 50a along the line V-V in Fig. 3. Fig. 5 is a cross-sectional view of the frame area F of the organic EL display device 50a along the line V-V in Fig. 3. Fig. 6 is an enlarged plan view showing a first modification of the notch Na, which is a figure corresponding to Fig. 3. Fig. 7 is an enlarged plan view showing a second modification of the notch Na, which is a figure corresponding to Fig. 3. Fig. 8 is an enlarged plan view showing a third modification of the notch Na, which is a figure corresponding to Fig. 3. Fig. 9 is a cross-sectional view of the display area D of the organic EL display device 50a. Fig. 10 is an equivalent circuit diagram showing a pixel circuit C of the organic EL display device 50a. Fig. 11 is a cross-sectional view showing an organic EL layer 23 constituting the organic EL display device 50a. Fig. 12 is a perspective view exemplifying a back side slit forming process in the manufacturing method of the organic EL display device 50a. Fig. 13 is a perspective view exemplifying a panel outer shape processing process in the manufacturing method of the organic EL display device 50a, when dividing the outer shape of an original panel rDP without outer shape processing. Fig. 14 is a perspective view exemplifying a panel outer shape processing process in the manufacturing method of the organic EL display device 50a, when forming the notch Na.

[0016] As shown in Figure 1, the organic EL display device 50a includes a display panel DP having a display area D, a frame area F, a terminal area T, and a folding area B. In the organic EL display device 50a, a direction X (horizontal direction in Figure 1) parallel to the substrate surface constituting the display panel DP, a direction Y (vertical direction in Figure 1) perpendicular to direction X and parallel to the substrate surface, and a thickness direction Z (see Figure 5, etc.) perpendicular to directions X and Y on the substrate surface are defined.

[0017] In this specification, the display panel DP refers to the panel after the panel outline processing process described later. Specifically, as shown in Figures 1 and 3, the display panel DP refers to a display panel in which at least a part of the outline of the original panel rDP (see Figure 12) that has not been processed (the base of the terminal part T described later in Figures 1 and 3) has been processed (cut). Hereinafter, in the display panel DP, the side with the display area D is referred to as the front surface f (see Figure 1), and the opposite side is referred to as the back surface b (see Figure 3).

[0018] The display area D is the area where images are displayed and constitutes the screen. As shown in Figure 1, the display area D is provided in a rectangular shape, for example. In this embodiment, a rectangular display area D is exemplified, but this rectangular shape also includes substantially rectangular shapes such as shapes with arc-shaped sides, shapes with arc-shaped corners, and shapes with notches in part of the sides. As shown in Figure 2, multiple subpixels P are arranged in a matrix in the display area D. In the display area D, as shown in Figure 2, for example, subpixels P having a red light-emitting region Lr for displaying red, subpixels P having a green light-emitting region Lg for displaying green, and subpixels P having a blue light-emitting region Lb for displaying blue are provided adjacent to each other. In the display area D, for example, one pixel is composed of three adjacent subpixels P having a red light-emitting region Lr, a green light-emitting region Lg, and a blue light-emitting region Lb. The arrangement of the subpixels P is not particularly limited and examples include pentile arrangements and stripe arrangements.

[0019] The frame area F is the area that constitutes the non-display portion of the screen. As shown in Figure 1, the frame area F is provided around the display area D, for example, in the shape of a rectangular frame.

[0020] The terminal section T is the part for connecting to an external circuit. As shown in Figure 1, the terminal section T is provided at one end of the frame region F in direction X (the right end in Figure 1) and extends parallel to direction Y. Multiple terminals (not shown) are arranged along direction Y on the terminal section T. A flexible substrate 45 (such as a COF (chip on film) or FOF (film on film)) is mounted on the terminal section T via, for example, an anisotropic conductive film (ACF), and is electrically connected to the terminal section T (its multiple terminals).

[0021] In this specification, as shown in Figures 1 and 3, the frame region F on the terminal section T side is referred to as the "terminal-side frame region Ft". The terminal-side frame region Ft is the frame region F between the display region D and the terminal section T. At both ends of the terminal-side frame region Ft in direction Y (at the base of the terminal section T), R-shaped portions are formed that are recessed inward in a plan view (the end faces of the display panel DP are R-shaped). Therefore, the dimension between the ends of the terminal-side frame region Ft of the display panel DP in direction Y is smaller than the dimension between the ends of the original panel rDP in direction Y in the frame regions F other than the terminal-side frame region Ft, by the amount that the outer shape of the original panel rDP has been cut away. Also, as shown in Figure 3, at both ends of the terminal-side frame region Ft in direction Y, there is a wire-free region Ftn where no wiring or electrodes (connection wiring 18h, first gate conductive layer 14d, second gate conductive layer 14e, etc., which will be described later in Figure 3) are arranged, extending in a strip shape along both ends in a plan view. The width (dimension in direction Y) Wtn of the unwired area Ftn is not particularly limited, but is approximately 1 mm.

[0022] As shown in Figure 4, the folding section B is the axis of fold that allows the display panel DP to be folded 180° (in a U-shape). As shown in Figures 1 and 3, the folding section B is provided in the terminal-side frame region Ft so as to extend parallel in one direction (direction Y).

[0023] As the configuration of the back side b of the display panel DP, the organic EL display device 50a includes a film 40 and a back side b slit U (hereinafter also simply referred to as "slit U"), as shown in Figures 3 to 5. As shown in Figure 4, the back side b of the display panel DP refers to the side opposite to the side on which the subpixels P constituting the display area D are provided (the side that becomes the outside when the display panel DP is bent) of the resin substrate 10, which is the base substrate (base film) constituting the display panel DP (described later), (the side that becomes the inside when the display panel DP is bent).

[0024] As shown in Figures 3 to 5, the film 40 is provided so as to cover the entire back surface b of the display panel DP (the entire display area D and the frame area F). As shown in Figures 4 and 5, the film 40 is attached to the back surface b of the display panel DP (the resin substrate 10 that constitutes it) (the inner surface in Figure 4 and the top surface in Figure 5) via an adhesive layer such as OCA (optical clear adhesive) 41. The film 40 is made of a plastic film such as polyethylene terephthalate (PET) resin.

[0025] As shown in Figures 3 to 5, the slit U refers to the slit on the back surface b side of the film 40. As shown in Figure 3, the slit U is provided so as to extend parallel to the direction Y in which the bent portion B extends, to both ends of the frame region F (terminal side frame region Ft) in direction Y. The slit U is also provided in a strip shape so as to overlap with the bent portion B in a plan view. The maximum width Wu of the slit U (maximum dimension in direction X) can be determined according to the type of film 40 and the irradiation pitch of the laser light L described later, but it is approximately 2 mm.

[0026] As shown in Figures 4 and 5, the slit U is formed, for example, by penetrating the film 40 in its thickness direction Z. Specifically, the slit U is formed so that it penetrates the film 40 and exposes the surface of the OCA 41. In other words, the film 40 is removed at the slit U. As shown in Figure 5, the depth Hu of the slit U (length from the opening edge to the bottom (processing tip) of the slit U in direction Z) is the same throughout the entire slit U.

[0027] In the organic EL display device 50a, as shown in Figures 1 and 3, a pair of notches Na are formed in one direction in the terminal-side frame region Ft, specifically at both ends in the direction Y in which the bent portion B (slit U) extends. The notches Na are portions that have been cut out of the display panel DP (the entire organic EL display device 50a including the film 40), and refer to portions that are recessed inward from both ends in direction Y. That is, the display panel DP and the film 40 are removed at the notches Na. The notches Na are formed by laser cutting using laser light L, which will be described later.

[0028] As shown in Figures 1 and 3, the pair of notches Na do not overlap with the slit U (bent portion B) in a plan view. Specifically, the pair of notches Na are formed in the region between the slit U (bent portion B) and the terminal portion T within the terminal-side frame region Ft. In other words, the pair of notches Na are formed in the terminal-side frame region Ft on the terminal portion T side of the slit U (bent portion B). Furthermore, as shown in Figure 3, the pair of notches Na are formed within the unwired region Ftn.

[0029] The notch Na is formed in various shapes depending on its position, the size of the terminal-side frame region Ft and the unwired region Ftn, etc. The planar shape of the notch Na is not particularly limited, and in addition to the circular (semicircular) shape shown in Figures 1 and 3, it may also be linear (notch Na1 shown in Figure 6 as a first modified example), rectangular (strip-shaped, notch Na2 shown in Figure 7 as a second modified example), triangular (notch Na3 shown in Figure 8 as a third modified example), or a combination of these. Note that the rectangular shape includes, for example, a roughly rectangular shape such as a shape with arc-shaped sides, a shape with arc-shaped corners, or a shape with a notch in part of the side. Among the planar shapes of the notch Na, a circular (semicircular) shape is preferred from the viewpoint of distributing stress that tends to concentrate in the R portion (see R in Figure 13), where the end face at the base of the terminal T is an R surface, to the notch Na. In the following, common aspects of Notch Na, Notch Na 1, Notch Na 2, and Notch Na 3 will be collectively referred to as "Notch Na."

[0030] The width Wn of the notch Na (dimension in direction X) is not particularly limited, but should be adjusted to be less than or equal to (or smaller than) the maximum width Wu of the slit U. For semicircular notch Na, the width Wn refers to the diameter. For triangular notch Na3, the width Wn refers to the length of one side. The width Wn of semicircular notch Na, rectangular notch Na2, triangular notch Na3, and notches with combined shapes are, for example, about 0.5 mm to 2 mm. The width Wn of linear notch Na1 is about the irradiation pitch of the laser beam L, which will be described later. Note that if the width Wn of linear notch Na1 and rectangular notch Na2 is sufficiently smaller than the maximum width Wu of the slit U (for example, about 0.1 mm to 1 mm), multiple linear notch Na1 and rectangular notch Na2 may be formed along both ends of direction Y in the terminal-side frame region Ft.

[0031] The length Ln of the notch Na (dimension in direction Y) is not particularly limited, but it should be adjusted to be less than or equal to (or smaller than) the width Wtn of the unwired area Ftn. Note that the length Ln of a semicircular notch Na refers to the radius. The length Ln of a triangular notch Na refers to the height when one side is considered the base. The length Ln of the notch Na is, for example, about 0.3 mm to 1 mm.

[0032] As described above, in the display panel DP after external shaping, the R portion at the base of the terminal T may overlap with the slit (at both ends in the Y direction) due to the narrowing of the bezel. In this case, due to variations in processing in each step and variations in the bending position during bending, tensile stress may be applied to the constriction of the R portion (see R shown in Figure 13) in the thickness direction Z of the display panel DP. It is presumed that this may cause cracks in the resin substrate 10 or disconnections of wiring near the R portion.

[0033] In contrast, in the organic EL display device 50a, a pair of notches Na are formed near the R portion at the base of the terminal portion T, extending inward from both ends in the direction Y of the terminal-side frame region Ft, cutting out the display panel DP (and film 40). As a result, stress that tends to concentrate in the R portion is distributed to the notches Na. Consequently, the stress on the display panel DP that is constricted in the R portion is relieved.

[0034] As shown in Figures 4 and 5, the organic EL display device 50a comprises, in the terminal-side frame region Ft (near the bent portion B of the frame region F), a resin substrate 10 provided as a base substrate, an inorganic laminated film 30, a surface f-side slit V (hereinafter also simply referred to as "slit V"), a first planarization film 8 covering the slit V, connection wiring 18h, and a second planarization film 19.

[0035] The resin substrate 10 is made of, for example, polyimide resin.

[0036] The inorganic multilayer film 30 is at least one layer of inorganic insulating film. As shown in Figures 4 and 5 (see also Figure 9), the inorganic multilayer film 30 is composed of four layers of inorganic insulating films, including a base coat film 11 (first inorganic insulating film) as a moisture-proof film, a gate insulating film 13 (second inorganic insulating film), a first interlayer insulating film 15 (third inorganic insulating film), and a second interlayer insulating film 17 (fourth inorganic insulating film), which are sequentially laminated on the resin substrate 10. The base coat film 11, gate insulating film 13, first interlayer insulating film 15, and second interlayer insulating film 17 are formed from single-layer or multilayer films of inorganic insulating films such as silicon nitride (SiNx (where x is a positive number)), silicon oxide (SiO2), or silicon oxynitride (SiON).

[0037] Slit V refers to a slit formed on the panel surface f side of the inorganic laminated film 30 located on the surface f of the display panel DP. As shown in Figures 4 and 5, slit V is provided in the bent portion B of the frame region F (terminal side frame region Ft) so as to penetrate the inorganic laminated film 30 and expose the surface of the resin substrate 10 (outer surface in Figure 4, bottom surface in Figure 5). Slit V is provided in the shape of a groove that penetrates parallel to the direction Y in which the bent portion B extends. Also, slit V extends to both ends of the frame region F in the direction Y and is provided in the shape of a strip in a plan view. The slit V in the inorganic laminated film 30 reduces the stress on the inorganic laminated film 30 when the frame region F is bent at its bent portion B. As a result, damage to the inorganic laminated film 30 caused by bending of the frame region F and disconnection of the connecting wiring 18h provided on the inorganic laminated film 30 are suppressed.

[0038] Furthermore, the surface-side slit V overlaps with the back-side slit U in a plan view. As a result, when the frame region F (terminal-side frame region Ft) is folded at its folding portion B, the stress on the film 40 at the folding portion B is reduced, further suppressing damage to the inorganic laminated film 30 and disconnection of the connecting wiring 18h caused by the folding of the frame region F.

[0039] The slit V is formed, for example, by penetrating the inorganic laminated film 30 in its thickness direction Z, as shown in Figures 4 and 5.

[0040] As shown in Figures 4 and 5, the first planarization film 8 is provided in a strip shape in plan view so as to fill the slit V. The first planarization film 8 is formed from, for example, an organic resin material such as polyimide resin or acrylic resin, or a polysiloxane-based SOG (spin on glass) material.

[0041] As shown in Figures 4 and 5 (see also Figure 3), multiple connection wires 18h are provided on both edges of the second interlayer insulating film 17 where the slit V is formed and on the first planarization film 8. Each connection wire 18h extends parallel to each other in direction X so as to intersect with the slit V. The end of the connection wire 18h on the display area D side is electrically connected to the first gate conductive layer 14d via a contact hole formed in the laminate of the first interlayer insulating film 15 and the second interlayer insulating film 17. The first gate conductive layer 14d is provided between the gate insulating film 13 and the first interlayer insulating film 15 and is electrically connected to the signal wiring (gate line 14, source line 18f, power line 18g, etc.) of the TFT layer 20 which constitutes the display area D, as described later. On the other hand, the end of the connection wire 18h on the terminal T side is electrically connected to the second gate conductive layer 14e via a contact hole formed in the laminate of the first interlayer insulating film 15 and the second interlayer insulating film 17. The second gate conductive layer 14e is provided between the gate insulating film 13 and the first interlayer insulating film 15, extends to the terminal section T, and is electrically connected to each terminal of the terminal section T. In this way, each signal wiring of the TFT layer 20 of the display area D and each terminal of the terminal section T are electrically connected via the connecting wiring 18h. The connecting wiring 18h is formed in the same layer and of the same material as the third wiring layer, which will be described later.

[0042] As shown in Figures 4 and 5, the second planarization film 19 is provided so as to cover each connecting wire 18h, the second interlayer insulating film 17, and the first planarization film 8. The second planarization film 19 is made of, for example, the same material as the first planarization film 8.

[0043] Furthermore, as a configuration of the surface f side of the display panel DP, the organic EL display device 50a, as shown in Figure 9, comprises a resin substrate 10, a thin film transistor (hereinafter also referred to as "TFT") layer 20 having an inorganic multilayer film 30, an organic EL element layer 31 provided as a light-emitting element layer constituting the display area D, and a sealing film 35 provided on the organic EL element layer 31.

[0044] As shown in Figure 9, the TFT layer 20 comprises a base coat film 11 provided on a resin substrate 10, a plurality of first TFTs 9a, a plurality of second TFTs 9b, and a plurality of capacitors 9c provided on the base coat film 11 for each subpixel P, and a second planarization film 19 provided on each first TFT 9a, each second TFT 9b, and each capacitor 9c. Furthermore, in the TFT layer 20, a base coat film 11, semiconductor layers 12a and 12b, a gate insulating film 13, a first wiring layer including gate lines 14 (see Figure 2), gate electrodes 14a and 14b, and a lower conductive layer 14c, a first interlayer insulating film 15, a second wiring layer including an upper conductive layer 16, a second interlayer insulating film 17, a third wiring layer including source lines 18f (see Figure 2), source electrodes 18a and 18c, drain electrodes 18b and 18d, and power lines 18g, and a second planarization film 19 are sequentially laminated on the resin substrate 10. Also, as shown in Figures 2 and 10, the TFT layer 20 is provided with a plurality of gate lines 14 that extend parallel to each other in the horizontal direction in the figures. As shown in Figures 2 and 10, the TFT layer 20 is provided with a plurality of source lines 18f that extend parallel to each other in a direction that intersects (orthogonal to) the plurality of gate lines 14, i.e., in the vertical direction in the figures. As shown in Figures 2 and 10, the TFT layer 20 is provided with multiple power lines 18g that extend parallel to each other in the vertical direction in the figures. Each power line 18g is provided adjacent to each source line 18f. As shown in Figure 10, in the TFT layer 20, a first TFT 9a, a second TFT 9b, and a capacitor 9c are provided as a pixel circuit C for each sub-pixel P. The pixel circuits C are arranged in a matrix corresponding to each sub-pixel P.

[0045] The semiconductor layers 12a and 12b are composed of, for example, a low-temperature polysilicon film or an In-Ga-Zn-O based oxide semiconductor film. The first, second, and third wiring layers are composed of, for example, a single metal film such as molybdenum (Mo), titanium (Ti), aluminum (Al), copper (Cu), or tungsten (W), or a multilayer metal film such as Mo(upper layer) / Al(middle layer) / Mo(lower layer), Ti / Al / Ti, Al(upper layer) / Ti(lower layer), Cu / Mo, or Cu / Ti. The third wiring layer is preferably formed of a multilayer metal film such as Ti / Al / Ti.

[0046] The first TFT9a and the second TFT9b are p-type TFTs in which the semiconductor layers 12a and 12b, described later, are doped with impurities such as boron.

[0047] As shown in Figure 10, the first TFT 9a is electrically connected to the corresponding gate line 14 and source line 18f at each sub-pixel P. Furthermore, as shown in Figure 9, the first TFT 9a comprises a semiconductor layer 12a, a gate insulating film 13, a gate electrode 14a, a first interlayer insulating film 15, a second interlayer insulating film 17, and a source electrode 18a and a drain electrode 18b, all sequentially provided on the base coat film 11. Here, the semiconductor layer 12a is provided in an island-like manner on the base coat film 11 and has, for example, a channel region, a source region, and a drain region. The gate insulating film 13 is provided so as to cover the semiconductor layer 12a. The gate electrode 14a is provided on the gate insulating film 13 so as to overlap with the channel region of the semiconductor layer 12a. The first interlayer insulating film 15 and the second interlayer insulating film 17 are provided sequentially so as to cover the gate electrode 14a. The source electrode 18a and the drain electrode 18b are provided on the second interlayer insulating film 17 so as to be spaced apart from each other. Furthermore, the source electrode 18a and the drain electrode 18b are electrically connected to the source region and drain region of the semiconductor layer 12a, respectively, through contact holes formed in the laminated film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.

[0048] As shown in Figure 10, the second TFT 9b is electrically connected to the corresponding first TFT 9a and power line 18g at each subpixel P. Furthermore, as shown in Figure 9, the second TFT 9b comprises a semiconductor layer 12b, a gate insulating film 13, a gate electrode 14b, a first interlayer insulating film 15, a second interlayer insulating film 17, and a source electrode 18c and a drain electrode 18d, all sequentially provided on the base coat film 11. Here, the semiconductor layer 12b is provided in an island-like manner on the base coat film 11 and has, for example, a channel region, a source region, and a drain region. The gate insulating film 13 is provided so as to cover the semiconductor layer 12b. The gate electrode 14b is provided on the gate insulating film 13 so as to overlap with the channel region of the semiconductor layer 12b. The first interlayer insulating film 15 and the second interlayer insulating film 17 are provided sequentially so as to cover the gate electrode 14b. The source electrode 18c and the drain electrode 18d are provided on the second interlayer insulating film 17 so as to be spaced apart from each other. Furthermore, the source electrode 18c and the drain electrode 18d are electrically connected to the source region and drain region of the semiconductor layer 12b, respectively, through contact holes formed in the laminated film of the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17.

[0049] In this embodiment, top-gate type first TFT9a and second TFT9b are used as examples, but the first TFT9a and second TFT9b may be bottom-gate type TFTs.

[0050] As shown in Figure 10, the capacitor 9c is electrically connected to the corresponding first TFT 9a and power line 18g in each sub-pixel P. Furthermore, as shown in Figure 9, the capacitor 9c comprises a lower conductive layer 14c formed in the same layer as the gate electrodes 14a and 14b using the same material, a first interlayer insulating film 15 provided to cover the lower conductive layer 14c, and an upper conductive layer 16 provided on the first interlayer insulating film 15 so as to overlap the lower conductive layer 14c. The upper conductive layer 16 is electrically connected to the power line 18g via a contact hole formed in the second interlayer insulating film 17.

[0051] As shown in Figure 9, the second planarization film 19 forms a flat surface in the display area D.

[0052] As shown in Figure 9, the organic EL element layer 31 is provided on the second planarization film 19 that constitutes the TFT layer 20. The organic EL element layer 31 comprises a plurality of organic EL elements 25 as a plurality of light-emitting elements arranged in a matrix corresponding to a plurality of subpixels P.

[0053] As shown in Figure 9, the organic EL element 25 comprises a plurality of first electrodes 21 arranged sequentially on the second planarization film 19, a plurality of organic EL layers 23 provided on each subpixel P on the first electrodes 21, and a second electrode 24 provided on the organic EL layer 23 in common to the plurality of subpixels P. The organic EL element 25 is covered with a sealing film 35.

[0054] As shown in Figure 9, the first electrode 21 is arranged in a matrix on the second planarization film 19 to correspond to a plurality of subpixels P. Each first electrode 21 is electrically connected to the drain electrode 18d (or source electrode 18c) of each second TFT 9b via a contact hole formed in the second planarization film 19. The first electrode 21 also has the function of injecting holes into the organic EL layer 23. Furthermore, it is more preferable to form the first electrode 21 from a material with a large work function in order to improve the hole injection efficiency into the organic EL layer 23. Here, examples of materials that constitute the first electrode 21 include metallic materials such as silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), and tin (Sn). Furthermore, the material that constitutes the first electrode 21 may be an alloy such as astatine (At) / astatine oxide (AtO2). In addition, the material that constitutes the first electrode 21 may be a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). Furthermore, the first electrode 21 may be formed by stacking multiple layers made of the above material. Examples of compound materials with a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).

[0055] As shown in Figure 9, the peripheral edge of the first electrode 21 is covered by an edge cover 22 that is provided in a grid pattern common to multiple subpixels P. Examples of materials that make up the edge cover 22 include positive-type photosensitive resin materials such as polyimide resin, acrylic resin, polysiloxane resin, and novolac resin, or polysiloxane-based SOG materials. A part of the surface of the edge cover 22 protrudes upward in the figure and is provided as an island-like pixel photospacer.

[0056] As shown in Figure 9, the organic EL layer 23 is arranged on each first electrode 21 and is provided in a matrix shape to correspond to multiple subpixels P. As shown in Figure 11, each organic EL layer 23 comprises a hole injection layer 1, a hole transport layer 2, an emissive layer 3, an electron transport layer 4, and an electron injection layer 5, which are provided in order on the first electrode 21.

[0057] The hole injection layer 1, also called the anode buffer layer, has the function of bringing the energy levels of the first electrode 21 and the organic EL layer 23 closer together, thereby improving the hole injection efficiency from the first electrode 21 to the organic EL layer 23. Examples of materials that constitute the hole injection layer 1 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, phenylenediamine derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives.

[0058] The hole transport layer 2 has the function of improving the efficiency of hole transport from the first electrode 21 to the organic EL layer 23. Examples of materials that constitute the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide, and the like.

[0059] The light-emitting layer 3 is a region in which holes and electrons are injected from the first electrode 21 and the second electrode 24, respectively, when a voltage is applied by the first electrode 21 and the second electrode 24, and where holes and electrons recombine. Here, the light-emitting layer 3 is formed of a material with high luminescence efficiency. Examples of materials constituting the light-emitting layer 3 include metal oxynoide compounds [8-hydroxyquinoline metal complex], naphthalene derivatives, anthracene derivatives, diphenylethylene derivatives, vinylacetone derivatives, triphenylamine derivatives, butadiene derivatives, coumarin derivatives, benzoxazole derivatives, oxadiazole derivatives, oxazole derivatives, benzimidazole derivatives, thiadiazole derivatives, benzthiazole derivatives, styryl derivatives, styrylamine derivatives, bisstyrylbenzene derivatives, trisstyrylbenzene derivatives, perylene derivatives, perinone derivatives, aminopyrene derivatives, pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylenevinylene, and polysilane.

[0060] The electron transport layer 4 has the function of efficiently transporting electrons to the light-emitting layer 3. Examples of materials that make up the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, fluorenone derivatives, silole derivatives, and metal oxynoide compounds.

[0061] The electron injection layer 5 has the function of bringing the energy levels of the second electrode 24 and the organic EL layer 23 closer together, thereby improving the efficiency of electron injection from the second electrode 24 to the organic EL layer 23. This function allows the driving voltage of the organic EL element 25 to be lowered. The electron injection layer 5 is also called the cathode buffer layer. Examples of materials that make up the electron injection layer 5 include inorganic alkali compounds such as lithium fluoride (LiF), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), and barium fluoride (BaF2), as well as aluminum oxide (Al2O3) and strontium oxide (SrO).

[0062] As shown in Figure 9, the second electrode 24 is provided so as to cover each organic EL layer 23 and edge cover 22. The second electrode 24 also has the function of injecting electrons into the organic EL layer 23. Furthermore, in order to improve the electron injection efficiency into the organic EL layer 23, it is more preferable that the second electrode 24 be made of a material with a small work function. Examples of materials that make up the second electrode 24 include silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb), lithium fluoride (LiF), etc. Furthermore, the second electrode 24 may be formed from an alloy such as magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), astatine (At) / astatine oxide (AtO2), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), or lithium fluoride (LiF) / calcium (Ca) / aluminum (Al). Alternatively, the second electrode 24 may be formed from a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), or indium zinc oxide (IZO). Furthermore, the second electrode 24 may be formed by stacking multiple layers made of the above materials. Examples of materials with a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), lithium (Li) / aluminum (Al), lithium (Li) / calcium (Ca) / aluminum (Al), and lithium fluoride (LiF) / calcium (Ca) / aluminum (Al).

[0063] As shown in Figure 9, the sealing film 35 comprises a first sealing inorganic insulating film 32 provided to cover the second electrode 24, a sealing organic film 33 provided on the first sealing inorganic insulating film 32, and a second sealing inorganic insulating film 34 provided to cover the sealing organic film 33, and has the function of protecting the organic EL layer 23 from moisture, oxygen, etc. The first sealing inorganic insulating film 32 and the second sealing inorganic insulating film 34 are made of inorganic materials such as silicon oxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx (x is a positive number)) such as trisilicon tetranitride (Si3N4), and silicon carbonitride (SiCN). The sealing organic film 33 is made of organic materials such as acrylic resin, polyurea resin, parylene resin, polyimide resin, and polyamide resin.

[0064] The above-described organic EL display device 50a is configured such that, at each subpixel P, a gate signal is input to the first TFT 9a via the gate line 14, thereby turning on the first TFT 9a, writing a data signal to the gate electrode 14b and capacitor 9c of the second TFT 9b via the source line 18f, and supplying a current from the power line 18g corresponding to the gate voltage of the second TFT 9b to the organic EL layer 23, causing the light-emitting layer 3 of the organic EL layer 23 to emit light and display an image. In addition, in the organic EL display device 50a, even if the first TFT 9a is turned off, the gate voltage of the second TFT 9b is maintained by the capacitor 9c, so the light emission from the light-emitting layer 3 is maintained until the gate signal for the next frame is input.

[0065] Next, the manufacturing method of the organic EL display device 50a of this embodiment will be described. The manufacturing method of the organic EL display device 50a includes a resin substrate formation step, a TFT layer formation step, an organic EL element layer formation step, and a sealing film formation step as steps for forming the surface f side of the display panel DP. The manufacturing method of the organic EL display device 50a also includes a film application step, a back-side slit formation step, and a panel outer shape processing step as steps for forming the back-side b side of the display panel DP.

[0066] ≪Process for forming the surface f side of the display panel DP≫ <Resin substrate formation process> For example, after applying a non-photosensitive polyimide resin on a support substrate (not shown) such as a glass substrate, a resin substrate 10 is formed by performing pre-baking and post-baking on the coating film.

[0067] <TFT Layer Formation Step> On the resin substrate 10 formed in the resin substrate formation step, a base coat film 11, a first TFT 9a, a second TFT 9b, a capacitor 9c, a second planarization film 19, etc. are formed using, for example, a well-known method to form a TFT layer 20. Here, when forming the first TFT 9a and the second TFT 9b, before forming the source electrode 18a, etc., first, a slit V on the panel surface f side is formed in the bending portion B of the frame region F in the inorganic laminated film 30 by dry etching. Subsequently, after forming the first planarization film 8 so as to fill the slit V, the connection wiring 18h is formed simultaneously with the source electrode 18a, etc. Finally, further, in the same manner as the first planarization film 8, the second planarization film 19 is formed of the same material so as to cover the connection wiring 18h.

[0068] <Organic EL Element Layer Formation Step> On the second planarization film 19 of the TFT layer 20 formed in the TFT layer formation step (specifically, the second planarization film 19 in the display region D), a first electrode 21, an edge cover 22, an organic EL layer 23 (hole injection layer 1, hole transport layer 2, light emitting layer 3, electron transport layer 4, electron injection layer 5), and a second electrode 24 are formed using a well-known method to form an organic EL element 25 and form an organic EL element layer 31.

[0069] <Sealing Film Formation Step> First, on the substrate surface on which the organic EL element layer 31 formed in the organic EL element layer formation process is formed, an inorganic insulating film such as a silicon nitride film, silicon oxide film, or silicon oxynitride film is deposited by plasma CVD using a CMM as a deposition mask to cover each organic EL element 25, thereby forming a first sealing inorganic insulating film 32. Next, an organic resin material such as acrylic resin is deposited on the first sealing inorganic insulating film 32 by, for example, an inkjet method to form a sealing organic film 33. Then, an inorganic insulating film such as a silicon nitride film, silicon oxide film, or silicon oxynitride film is deposited by plasma CVD using a CMM as a deposition mask to cover the sealing organic film 33, thereby forming a second sealing inorganic insulating film 34 and thus forming a sealing film 35. Through the above steps, a sealing film 35 can be formed in which the first sealing inorganic insulating film 32, the sealing organic film 33, and the second sealing inorganic insulating film 34 are sequentially stacked in the display area D.

[0070] ≪Process for forming the back side b of the display panel DP≫ <Film application process> By irradiating the unprocessed original panel rDP (the resin substrate 10 constituting it) formed by the above process with laser light from the support substrate side, the support substrate is peeled off from the side (back side) opposite to the side of the resin substrate 10 on which the TFT layer 20 is provided (the side on which the subpixels P constituting the display area D are provided). Subsequently, the film 40 is attached to the back side b of the resin substrate 10 from which the support substrate has been peeled off via the OCA 41.

[0071] <Slit formation process on the back side> As shown in Figure 12, a slit U on the back surface b of the panel is formed by irradiating the portion of the film 40 covering the back surface b of the unprocessed original panel rDP (the resin substrate 10 that constitutes it) that overlaps with the folded portion B in a plan view with, for example, a CO2 laser beam L multiple times parallel to the direction Y in which the folded portion B extends. Specifically, a laser slit is formed in a plan view by irradiating the above portion of the film 40 with a laser beam L of a predetermined irradiation intensity so as to extend in the direction Y, thereby performing laser slit processing. Subsequently, the same laser slit processing is performed multiple times along the direction X at a predetermined pitch, and by removing almost all of the film 40 at the folded portion B, a strip-shaped slit U can be formed in a plan view. The pitch at which the laser beam L is irradiated is not particularly limited, but is, for example, about 0.1 mm. The irradiation intensity of the laser beam L when forming the slit U is such that the film 40 is removed and the surface of the OCA 41 is exposed, but the irradiation intensity does not penetrate the OCA 41. As shown in Figure 5, the side surface (processed end face) of the slit U formed as described above is tapered in cross-sectional view due to the thermal effect of the laser light L. The bottom of the slit U (the part where the surface of OCA41 is exposed) is a flat surface with minute irregularities in cross-sectional view, where the ends of multiple processing lines overlap.

[0072] <Panel Outer Shape Processing Process> By irradiating the original panel rDP, which has an unprocessed outer shape with a slit U formed on it, with laser light L along the cut line C1 shown in Figure 13, at least a portion of the panel's outer shape (the base of the terminal portion T in Figure 13) is laser-cut into a predetermined shape (R-shaped in Figure 13, with the cross-section being an R-surface). As a result, as shown in Figure 13, a display panel DP is obtained with its outer shape cut such that, in direction Y, the base of the terminal portion T (terminal-side frame region Ft) is shorter than the frame region F other than the terminal-side frame region Ft.

[0073] In the manufacturing method of the organic EL display device 50a, as shown in Figure 14, in the panel outline processing step, a pair of notches Na are formed by irradiating both ends of the terminal-side frame region Ft of the display panel DP in direction Y (near the R portion at the base of the terminal portion T) with laser light L along the cut line C2 multiple times as needed. At this time, the display panel DP and the film 40 are laser-cut so as to penetrate in the thickness direction Z. Specifically, in the region between the slit U (bent portion B) and the terminal portion T in the terminal-side frame region Ft (the region that does not overlap with the slit U in a plan view), a notch that is cut out linearly in a plan view (linear notch Na1, see Figure 6) is formed by performing laser cutting from both ends in direction Y toward the inside (opposite side). Subsequently, if necessary, the same laser cutting process is performed multiple times along direction X at a predetermined pitch to form a predetermined planar shape, for example, a pair of semicircular notches Na (see Figures 1 and 3). The pitch at which the laser beam L is irradiated is not particularly limited, but is, for example, about 0.1 mm. The irradiation intensity of the laser beam L is not particularly limited as long as it is sufficient to penetrate the entire display panel DP and film 40. In this way, a pair of notches Na can be formed in the conventional panel outline processing process.

[0074] <Other processes> The manufacturing method for the organic EL display device 50a may include a flexible substrate connection step, which takes place after the back-side slit formation step and before the panel outline processing step, in which the flexible substrate 45 is mounted to the terminal portion T, for example, via ACF, and electrically connected. Alternatively, the manufacturing method for the organic EL display device 50a may include a bending step, which takes place after the panel outline processing step, in which the display panel DP is bent 180° (in a U-shape) around the bending portion B as the axis, as shown in Figure 4. In this manner, the organic EL display device 50a can be manufactured.

[0075] <Effects> As described above, the following effects can be obtained with the organic EL display device 50a of this embodiment.

[0076] (1) In the organic EL display device 50a, the film 40 on the back surface b of the display panel DP is provided with a strip-shaped slit U that overlaps in plan view with the bent portion B in the frame region F (terminal-side frame region Ft) between the display area D and the terminal portion T, and a pair of notches Na are formed at both ends of the terminal-side frame region Ft in the direction Y, cutting out the display panel DP and recessing inward. With this structure, even if the end faces (cross-sections of the display panel DP) at both ends of the terminal-side frame region Ft in the direction Y overlap with the slit U, the stress that tends to concentrate in the R portion during each process can be distributed to the notches Na. As a result, the stress on the constriction of the R portion (see R shown in Figure 13) is relieved, which suppresses the occurrence of cracks in the resin substrate 10 near the R portion and also suppresses the disconnection of wiring (e.g., connection wiring 18h).

[0077] (2) In the organic EL display device 50a equipped with a pair of notches Na, there is no need to provide a separate member to distribute the stress applied to the R portion, thus simplifying the configuration of the display device.

[0078] (3) In the method for manufacturing the organic EL display device 50a, a pair of notches Na are formed in the panel outline processing step in which the original panel rDP is laser-cut to form the outline of the display panel DP. In other words, since there is no need to add steps or change the order of steps in order to form the pair of notches Na, an organic EL display device 50a having a pair of notches Na can be easily manufactured.

[0079] 《Second Embodiment》 Next, a second embodiment of the present invention will be described using Figure 15. Figure 15 is a plan view of the back surface b (the surface that becomes the inside when folded) of the display panel in the frame area F of the organic EL display device 50b of this embodiment, and an enlarged plan view of the area around the notch Nb, and corresponds to Figure 3. Note that the overall configuration of the organic EL display device 50b, including the display area D other than the notch Nb and the frame area F, is the same as in the first embodiment described above, so a detailed explanation will be omitted here. Also, the same reference numerals are used for components that are the same as in the first embodiment, and their descriptions will be omitted.

[0080] In the organic EL display device 50b, the position where the pair of notches Nb are formed in direction X is different from the position where the pair of notches Na are formed in the organic EL display device 50a. Specifically, as shown in Figure 15, the pair of notches Nb overlap with the slit U (bent portion B) in a plan view. Specifically, the pair of notches Nb are formed within the slit U (bent portion B). The pair of notches Nb are formed closer to the base of the terminal portion T than the pair of notches Na. Note that all the matters described for notch Na also apply to notch Nb.

[0081] The organic EL display device 50b can be manufactured by changing the irradiation position of the laser light L when forming the notches Nb in the panel outer shape processing process of the organic EL display device 50a described above. Specifically, the processing can be done in the same way as the organic EL display device 50a, except that laser cutting is performed in the area that overlaps with the slit U (bent portion B) in a plan view in the terminal side frame region Ft. In this way, a pair of notches Nb with a predetermined planar shape, for example, a semicircular shape (see Figure 15), can be formed within the slit U (bent portion B).

[0082] <Effects> The organic EL display device 50b described above can achieve the same effects as described above.

[0083] Other embodiments In each of the above embodiments, the inorganic multilayer film is composed of four layers, in which a gate insulating film, a first interlayer insulating film, and a second interlayer insulating film are stacked in that order on a base coat film. However, it may also be composed of a single base coat film, or of two layers, a base coat film and a gate insulating film.

[0084] In the embodiments described above, an organic EL layer with a five-layer stacked structure consisting of a hole injection layer, a hole transport layer, an emissive layer, an electron transport layer, and an electron injection layer was exemplified. However, the organic EL layer may also have a three-layer stacked structure consisting of, for example, a hole injection layer / hole transport layer, an emissive layer, and an electron transport layer / electron injection layer.

[0085] Furthermore, while the above embodiments illustrate organic EL display devices in which the first electrode is the anode and the second electrode is the cathode, the present invention can also be applied to organic EL display devices in which the laminated structure of the organic EL layer is reversed, with the first electrode being the cathode and the second electrode being the anode.

[0086] In the embodiments described above, an organic EL display device was illustrated in which the electrode of the TFT connected to the first electrode is used as the drain electrode. However, the present invention can also be applied to an organic EL display device in which the electrode of the TFT connected to the first electrode is called the source electrode. In the embodiments described above, an organic EL display device was used as the display device, but the present invention can also be applied to display devices such as active matrix driven liquid crystal displays.

[0087] In the embodiments described above, an organic EL display device was used as an example of a display device. However, the present invention is not limited to organic EL display devices and can be applied to any flexible display device. For example, it can be applied to a flexible display device equipped with a QLED (Quantum-dot light emitting diode), which is a light-emitting element using a quantum dot-containing layer. [Industrial applicability]

[0088] As described above, the present invention is useful for flexible display devices. [Explanation of Symbols]

[0089] B Folded section P subpixel T terminal section D Display area DP display panel f Display panel surface b. Back of the display panel rDP (raw panel) - Unprocessed outer shape F Frame area Ft terminal side frame area Ftn no wiring area Wtn: Width of the unwired area (dimension in direction Y) L laser light Na, Na1, Na2, Na3, Nb Notch Wn Notch width (dimension in direction X) Ln Notch length (dimension in direction Y) U-shaped slit (slit on the back side) Wu slit (backside slit) maximum width (maximum dimension in direction X) V-slit (surface-side slit) Y direction (one direction) X,Z direction 10. Resin substrate (base substrate) 11. Base coat film (at least one layer of inorganic insulating film) 13 Gate insulating film (at least one layer of inorganic insulating film) 15. First interlayer insulating film (at least one inorganic insulating film) 17. Second interlayer insulating film (at least one inorganic insulating film) 18h Connection wiring 20 TFT layer (thin film transistor layer) 25 Organic EL elements (light-emitting elements) 30. Inorganic multilayer film (at least one layer of inorganic insulating film) 31 Organic EL element layer (organic electroluminescent element layer, light-emitting element layer) 35 Encapsulation film 40 film 45 Flexible circuit boards 50a,50b Organic EL display device

Claims

1. Display area and, A frame area is provided around the above display area, A terminal portion is provided at one end of the above-mentioned frame area, The display panel comprises a bendable portion provided in the terminal-side frame region between the terminal portion and the display area, extending in one direction. A film is provided to cover the back surface of the above display panel, A display device comprising the above film, a strip-shaped slit provided on the above film so as to overlap with at least a portion of the folded portion in a plan view, and extending to both ends of the terminal-side frame region in the direction in which the folded portion extends, At both ends of the terminal-side frame region in the direction in which the bent portion extends, the end face of the display panel is formed with an R-shaped surface such that the distance between the two ends of the terminal-side frame region in the direction in which the bent portion extends is smaller than the distance between the two ends of the frame region other than the terminal-side frame region. The R portion mentioned above overlaps with at least a part of the slit on the back side, A display device characterized in that a pair of notches are formed at both ends of the terminal-side frame region in the direction in which the bent portion extends, cutting out the display panel and recessing inward.

2. In the display device described in claim 1, The display device is characterized in that the pair of notches described above do not overlap with the slits on the back side when viewed from above.

3. In the display device described in claim 1, The display device is characterized in that the pair of notches described above are formed on the terminal side of the slit on the back side.

4. In the display device described in claim 1, The display device is characterized in that the pair of notches described above overlap with the slits on the back side when viewed from above.

5. In the display device described in claim 1, The display device is characterized in that the pair of notches described above are formed within the slits on the back side.

6. In a display device according to any one of claims 1 to 5, The above display panel is provided with a strip-shaped area without wiring extending along both ends. The display device is characterized in that the pair of notches described above are formed within the unwired area.

7. In the display device described in claim 6, A display device characterized in that, in the direction in which the bent portion extends, the dimensions of the pair of notches are less than or equal to the dimensions of the unwired area.

8. In a display device according to any one of claims 1 to 5, A display device characterized in that, in the width direction of the rear-side slit, the dimensions of the pair of notches are less than or equal to the width of the rear-side slit.

9. In a display device according to any one of claims 1 to 5, The display device is characterized in that the pair of notches described above are formed in a circular, linear, rectangular, triangular, or a combination thereof in a plan view.

10. In a display device according to any one of claims 1 to 5, The above display panel is, Base board and At least one inorganic insulating film layer provided on the above base substrate, A display device characterized by comprising the above-mentioned inorganic insulating film and a surface-side slit provided in a strip shape so as to overlap with the above-mentioned folded portion in a plan view.

11. In the display device described in claim 10, A display device characterized in that the above-mentioned surface-side slit overlaps with the above-mentioned back-side slit in a plan view.

12. In the display device described in claim 10, A thin-film transistor layer having the above-mentioned inorganic insulating film, A light-emitting layer is provided on the thin-film transistor layer and constitutes the display area, A display device characterized by comprising a sealing film provided so as to cover the above-mentioned light-emitting layer.

13. In the display device described in claim 12, The above-mentioned light-emitting layer is an organic electroluminescent element layer, characterized in that it is a display device.

14. Display area and, A frame area is provided around the above display area, A terminal portion is provided at one end of the above-mentioned frame area, The display panel comprises a bendable portion provided in the terminal-side frame region between the terminal portion and the display area, extending in one direction. A film is provided to cover the back surface of the above display panel, A method for manufacturing a display device comprising the above-mentioned film, a strip-shaped slit provided on the above-mentioned film so as to overlap with at least a part of the folded portion in a plan view, and extending to both ends of the terminal-side frame region in the direction in which the folded portion extends, A film application process in which the above-mentioned film is attached to the back surface of the original panel, which has not been processed in terms of its external shape, that constitutes the above-mentioned display panel, The above film is subjected to a back-side slit formation step, in which a laser beam is irradiated multiple times parallel to the direction in which the bent portion extends to form the back-side slit, The system includes a panel outer shape processing step in which the original panel, which has the above-mentioned slits on the back side formed thereon, is irradiated with laser light to perform laser cutting, thereby forming the outer shape cut display panel. In the above panel outer shape processing process, At both ends of the terminal-side frame region in the direction in which the bent portion extends, the end face of the display panel is formed with an R-shaped surface such that the distance between the two ends of the terminal-side frame region in the direction in which the bent portion extends is smaller than the distance between the two ends of the frame region other than the terminal-side frame region. The R portion mentioned above overlaps with at least a part of the slit on the back side, A method for manufacturing a display device, characterized by irradiating both ends of the terminal-side frame region in the direction in which the bent portion extends with laser light to cut out the display panel and form a pair of inwardly recessed notches.

15. In the method for manufacturing a display device according to claim 14, The process for forming the above-mentioned display panel includes a thin-film transistor layer formation step in which a thin-film transistor layer having at least one inorganic insulating film is formed on a base substrate. A method for manufacturing a display device, characterized in that, in the thin-film transistor layer formation step described above, a strip-shaped surface-side slit is formed in the inorganic insulating film so as to overlap with the folded portion in a plan view.

16. In the method for manufacturing a display device according to claim 15, A light-emitting layer formation step is performed on the thin-film transistor layer described above, in which a light-emitting layer constituting the display area is formed. A method for manufacturing a display device, comprising a sealing film formation step of forming a sealing film so as to cover the above-mentioned light-emitting layer.

Images