Light-emitting element and display device equipped therewith

Abstract

The present invention provides a light-emitting element and a display device equipped therewith. [Solution] The light-emitting element according to the present invention comprises a light-emitting section including a plurality of sequentially stacked light-emitting structures, each comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. A plurality of individual electrodes are provided on the lower surface of the light-emitting section, which contact the first conductivity type semiconductor layers of the plurality of light-emitting structures. At least a portion of the plurality of individual electrodes has a conductive via structure. A common electrode is provided on the side surface of the light-emitting section, which contacts the side surface of the second conductivity type semiconductor layer of the plurality of light-emitting structures. The side surfaces of the first conductivity type semiconductor layer and the active layer of the plurality of light-emitting structures are insulated from the common electrode by an insulating layer.

Description

[Technical Field]

[0001] The present invention relates to a light-emitting element and a display device equipped therewith. [Background technology]

[0002] Light-emitting elements, such as light-emitting diodes (LEDs), are known as next-generation light sources that offer advantages over conventional light sources, including a long lifespan, low power consumption, fast response speed, and environmental friendliness. Due to these advantages, industrial demand for LEDs is increasing. LEDs are used in a wide variety of products, including conventional lighting fixtures and display devices.

[0003] Recently, micro-LEDs, which are micro- or nano-sized, have been developed and are referred to as micro-LEDs. Micro-LEDs are being applied to relatively large display devices such as televisions, and further applications are being attempted to be made to small display devices such as displays for augmented reality (AR) equipment. Because micro-LEDs applied to small display devices are extremely small, only a few micrometers in size, it is difficult to secure a large light-emitting area. In particular, in micro-LEDs where RGB subpixels are arranged vertically, the light-emitting area is reduced by the electrodes used to drive each subpixel, which can lower the luminous efficiency of the micro-LED. [Overview of the project] [Problems that the invention aims to solve]

[0004] The problem that this invention aims to solve is to provide a light-emitting element with improved luminous efficiency, and a display device equipped with the same. [Means for solving the problem]

[0005] A light-emitting element according to one aspect of the present invention includes a first light-emitting structure, a second light-emitting structure, and a third light-emitting structure that are sequentially stacked to emit light of different wavelengths, wherein each of the first, second, and third light-emitting structures comprises a light-emitting section having a sequentially stacked first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first individual electrode, a second individual electrode, and a third individual electrode provided on the lower surface of the light-emitting section, contacting the first conductivity type semiconductor layer of the first, second, and third light-emitting structures, respectively, and having at least a portion of a conductive via structure; a common electrode provided on the side surface of the light-emitting section, contacting the side surface of the second conductivity type semiconductor layer of the first, second, and third light-emitting structures; and an insulating layer that insulates the side surfaces of the first conductivity type semiconductor layer and the active layer of the first, second, and third light-emitting structures from the common electrode.

[0006] In one embodiment, a concave step can be formed on the side surfaces of the first conductivity type semiconductor layer and the active layer of the first, second, and third light-emitting structures, extending inward from the side surfaces of the second conductivity type semiconductor layer of the first, second, and third light-emitting structures.

[0007] In one embodiment, the step size of the side surfaces of the first conductivity type semiconductor layer and the active layer of the first emission structure, the second emission structure, and the third emission structure relative to the side surfaces of the second conductivity type semiconductor layer of the first emission structure, the second emission structure, and the third emission structure may be 0.5 μm or less.

[0008] In one embodiment, the common electrode may surround the side surface of the light-emitting portion.

[0009] In one embodiment, the common electrode may extend to the upper surface of the light-emitting portion.

[0010] In one embodiment, the common electrode may include a transparent electrode material.

[0011] As one embodiment, the first individual electrode may include a first electrode pad that contacts the lower surface of the first conductive-type semiconductor layer of the first light-emitting structure. The second individual electrode and the third individual electrode may include second electrode pads and third electrode pads disposed on the lower surface of the light-emitting portion, and second conductive vias and third conductive vias that electrically connect the second electrode pads and the third electrode pads to the first conductive-type semiconductor layers of the second light-emitting structure and the third light-emitting structure, respectively.

[0012] As one embodiment, each of the first individual electrode, the second individual electrode, and the third individual electrode may include a first electrode pad, a second electrode pad, and a third electrode pad disposed on the lower surface of the light-emitting portion, and a first conductive via, a second conductive via, and a third conductive via that electrically connect the first electrode pad, the second electrode pad, and the third electrode pad to the first conductive-type semiconductor layers of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure, respectively.

[0013] As one embodiment, the light-emitting device may include a reflective layer surrounding the side surface of the light-emitting portion; and a passivation layer insulating the common electrode and the reflective layer.

[0014] As one embodiment, the side surface of the light-emitting portion is aligned with the stacking direction of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure.

[0015] As one embodiment, the side surface of the light-emitting portion is inclined so as to gradually widen outward from the first light-emitting structure toward the third light-emitting structure.

[0016] As one embodiment, the light-emitting device may include a scattering pattern provided on the upper surface of the light-emitting portion.

[0017] As one embodiment, the light-emitting device may include a lens provided on the upper surface of the light-emitting portion.

[0018] As one embodiment, the third light-emitting structure may generate red light.

[0019] In one embodiment, the first light-emitting structure may generate blue light, and the second light-emitting structure may generate green light.

[0020] A light-emitting element according to one aspect of the present invention includes a light-emitting section comprising a plurality of sequentially stacked light-emitting structures, each comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, respectively; a plurality of individual electrodes provided on the lower surface of the light-emitting section, in contact with the first conductivity type semiconductor layer of the plurality of light-emitting structures, and having at least a portion of which is a conductive via structure; a common electrode provided on the side surface of the light-emitting section, in contact with the side surface of the second conductivity type semiconductor layer of the plurality of light-emitting structures; and an insulating layer that insulates the side surfaces of the first conductivity type semiconductor layer and the active layer of the plurality of light-emitting structures from the common electrode.

[0021] In one embodiment, the uppermost light-emitting structure among the plurality of light-emitting structures can generate red light.

[0022] In one embodiment, a concave step can be formed on the side surfaces of the first conductivity type semiconductor layer and the active layer of the plurality of light-emitting structures, extending inward from the side surface of the second conductivity type semiconductor layer of the plurality of light-emitting structures.

[0023] In one embodiment, the light-emitting element may include a reflective layer surrounding the side surface of the light-emitting portion; and a passivation layer that insulates the common electrode from the reflective layer.

[0024] A display device according to one aspect of the present invention includes a display panel equipped with a plurality of the aforementioned light-emitting elements and a drive circuit that performs on-off switching for the plurality of light-emitting elements; and a controller that inputs on-off switching signals for the plurality of light-emitting elements to the drive circuit using a video signal. [Effects of the Invention]

[0025] According to embodiments of the present invention, by reducing the number of electrodes having a conductive via structure, a light-emitting element with improved luminescence efficiency and a display device employing the same can be realized. [Brief explanation of the drawing]

[0026] [Figure 1] This is a schematic cross-sectional view of a light-emitting element according to an exemplary embodiment. [Figure 2] This is a schematic cross-sectional view showing the light-emitting section illustrated in Figure 1. [Figure 3] This is a schematic cross-sectional view of a light-emitting element according to an exemplary embodiment. [Figure 4] This is a schematic cross-sectional view of a light-emitting element according to an exemplary embodiment. [Figure 5] This is a schematic cross-sectional view of a light-emitting element according to an exemplary embodiment. [Figure 6] This is a diagram showing an example of a planar arrangement of the first individual electrode, the second individual electrode, and the third individual electrode. [Figure 7] This is a diagram showing an example of a planar arrangement of the first individual electrode, the second individual electrode, and the third individual electrode. [Figure 8] This is a diagram showing an example of a planar arrangement of the first individual electrode, the second individual electrode, and the third individual electrode. [Figure 9A] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9B] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9C] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9D] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9E] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9F] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9G] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9H] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9I]Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9J] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9K] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9L] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 9M] Figures 1 and 3 show an example of a method for manufacturing a light-emitting element. [Figure 10A] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10B] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10C] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10D] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10E] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10F] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10G] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10H] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10I] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10J] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10K] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 10L] Figures 4 and 5 show an example of a method for manufacturing a light-emitting element. [Figure 11]This is a schematic diagram of one embodiment of a display device. [Figure 12] This is a block diagram of one embodiment of an electronic device including a display. [Figure 13] This drawing shows an embodiment of a mobile device as an exemplary application example of an electronic device. [Figure 14] This drawing shows an embodiment of an automotive head-up display device as an exemplary application example of an electronic device. [Figure 15] This drawing shows an embodiment of augmented reality glasses or virtual reality glasses as an exemplary application example of an electronic device. [Figure 16] This drawing shows one embodiment of a large-scale signage system as an exemplary application example of an electronic device. [Figure 17] This drawing shows an embodiment of a wearable display as an exemplary application example of an electronic device. [Modes for carrying out the invention]

[0027] Recently, the technology for applying light-emitting elements, such as microLEDs, to displays has advanced significantly, and televisions using microLEDs have begun to be sold. Furthermore, attempts are underway to apply microLEDs to augmented reality devices. For augmented reality displays, extremely small microLED display chips (or panels) are created monolithically at the wafer level without the transfer process required for television displays. While the pixel size of a single pixel in a television display is tens to hundreds of micrometers, in miniature or microdisplays, such as those for augmented reality devices, the pixel size is extremely small, around a few micrometers.

[0028] To display a color image on a display, a single pixel (color pixel) contains RGB subpixels. There are two arrangement structures for RGB subpixels: horizontal and vertical. In the horizontal arrangement, the RGB subpixels are arranged horizontally, while in the vertical arrangement, they are arranged vertically. In the horizontal arrangement, each subpixel can be referred to as a microLED. In the vertical arrangement, the microLED is a monolithic RGB microLED, where the RGB subpixels are integrated.

[0029] For a given size of color pixel, a horizontal arrangement structure requires smaller subpixels compared to a vertical arrangement structure, making the horizontal process more difficult. In a vertical arrangement structure, the subpixels are arranged vertically, making the vertical process more difficult. However, in the case of a vertical arrangement structure, larger subpixels can be manufactured compared to a horizontal arrangement structure, resulting in even greater efficiency (EQE: External Quantum Efficiency) compared to a horizontal arrangement structure.

[0030] When fabricating RGB microLED chips with a vertical arrangement structure, conductive vias are required to partially or completely penetrate each subpixel in order to form electrodes for driving each subpixel. For example, six electrodes are needed to drive RGB subpixels, five of which are represented by conductive vias. The more conductive vias there are, the smaller the light-emitting area of ​​the microLED becomes. In the case of small or microdisplays, such as those used in augmented reality devices, the pixel size is only a few micrometers, and if there are many conductive vias, it is difficult to secure a sufficient light-emitting area. Therefore, in order to secure a large light-emitting area, it is necessary to reduce the number of conductive vias.

[0031] The present invention provides a light-emitting element with improved luminous efficiency, such as a vertical RGB microLED, and a display device employing this light-emitting element, by reducing the number of conductive vias and securing a sufficient light-emitting area. To achieve this, the p-electrodes (or n-electrodes) of multiple subpixels are formed as a common electrode. By forming the common electrode on the side of the subpixel, the pixel size can be maximized. This reduces the number of conductive vias, thereby securing a light-emitting area, increasing luminous efficiency, and reducing power consumption.

[0032] The following describes in detail embodiments of a light-emitting element and a display device employing the same, with reference to the attached drawings. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings is exaggerated for clarity and convenience of explanation. Furthermore, the embodiments described below are merely examples, and various modifications are possible from such embodiments.

[0033] In the following, the terms "top" and "above" include not only those directly above and in contact with, but also those above and not in contact. Singular expressions include multiple expressions unless the context clearly indicates otherwise. Furthermore, when a part "contains" a component, this means that it includes other components, not excludes them, unless otherwise stated.

[0034] The use of the term "the foregoing" and similar referential terms can be singular or plural. Unless the order of the steps constituting the method is explicitly stated or, to the contrary, stated, such steps are performed in any order and are not necessarily limited to the order in which they are stated.

[0035] The lines or connecting members between components shown in the drawings exemplify functional and / or physical or circuit connections, and in actual devices, they may be shown as alternative or additional diverse functional, physical, or circuit connections.

[0036] All use of examples or illustrative terms is solely for the purpose of detailing the technical idea and is not limited by such examples or illustrative terms unless otherwise specified by the claims.

[0037] Figure 1 is a schematic cross-sectional view of a light-emitting element 1 according to an exemplary embodiment. Figure 2 is a schematic cross-sectional view showing the light-emitting section 100 shown in Figure 1. The light-emitting element 1 of this embodiment is a vertically stacked light-emitting element in which a plurality of subpixels are stacked vertically. The light-emitting element 1 may be, for example, a microLED.

[0038] Referring to Figures 1 and 2, the light-emitting element 1 comprises a light-emitting section 100 having multiple vertically stacked light-emitting structures, and multiple electrodes for driving the multiple light-emitting structures. The light-emitting element 1 corresponds to one pixel in a display device, and the multiple light-emitting structures may correspond to vertically stacked subpixels that form one pixel. Each of the multiple light-emitting structures comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, stacked sequentially. The multiple electrodes comprise a common electrode 40 common to the multiple light-emitting structures and multiple individual electrodes corresponding to each of the multiple light-emitting structures. The multiple individual electrodes are provided on the lower surface 102 of the light-emitting section 100 and contact the first conductivity type semiconductor layer of the multiple light-emitting structures. At least some of the multiple individual electrodes have a conductive via structure that penetrates other light-emitting structures. The common electrode 40 is provided on the side surface 103 of the light-emitting section 100 and contacts the side surface of the second conductivity type semiconductor layer of the multiple light-emitting structures. An insulating layer 60 is provided on the side surfaces of the first conductivity type semiconductor layer and the active layer of the multiple light-emitting structures to insulate these sides from the common electrode.

[0039] The light-emitting portion 100 may be formed from a III-V nitride semiconductor material. III-V nitride semiconductor materials may include, for example, GaN, InGaN, AlInGaN, AlGaInP, etc. For example, the light-emitting portion 100 may be formed from a GaN-based semiconductor material. Each of the multiple light-emitting structures may have a structure in which a first conductivity type semiconductor layer, an active layer having a quantum well structure, and a second conductivity type semiconductor layer are sequentially stacked. The band gap energy can be controlled by the indium (In) composition ratio of the indium (In)-containing material layer in the active layer, thereby determining the emission wavelength band.

[0040] Exemplary, multiple light-emitting structures may emit light of different wavelengths from each other. In this embodiment, the multiple light-emitting structures may comprise a first light-emitting structure 10, a second light-emitting structure 20, and a third light-emitting structure 30 that are sequentially stacked. The first light-emitting structure 10 forms the lower layer of the light-emitting section 100. The second light-emitting structure 20 is stacked on the first light-emitting structure 10, and the third light-emitting structure 30 is stacked on the second light-emitting structure 20. The third light-emitting structure 30 forms the upper layer of the light-emitting section 100.

[0041] The first light-emitting structure 10 may comprise sequentially stacked first conductivity type semiconductor layers 11, an active layer 12 having a quantum well structure, and a second conductivity type semiconductor layer 13. The first conductivity type semiconductor layer 11 may be a semiconductor layer doped with a first-type impurity, such as a GaN layer. The active layer 12 is a layer that emits light through electron-hole recombination. The active layer 12 may be formed by growing on the first conductivity type semiconductor layer 11. The active layer 12 has a quantum well structure. For example, the active layer 12 may be Al x Ga y In zThe quantum well can have a single quantum well or a multi-quantum well structure, created by periodically changing the x, y, and z values ​​in N to adjust the band gap. For example, the quantum well layer and the barrier layer can form a quantum well structure in the form of InGaN / GaN, InGaN / InGaN, InGaN / AlGaN, or InGaN / InAlGaN, and the emission wavelength band can be adjusted by controlling the band gap energy by the composition ratio of indium (In) in the material layer containing indium (In). The second conductivity type semiconductor layer 13 can be formed on the active layer 12. The second conductivity type semiconductor layer 13 can be a semiconductor layer doped with a second-type impurity, such as a GaN layer. For example, the first-type impurity is an n-type impurity and the second-type impurity is a p-type impurity. Conversely, the first-type impurity is a p-type impurity and the second-type impurity is an n-type impurity. Si, Ge, Se, Te, etc. can be used as n-type impurities. Mg, Zn, Be, etc. can be used as p-type impurities. In this embodiment, we will describe the case where the first type impurity is an n-type impurity and the second type impurity is a p-type impurity. In this case, the first conductivity type semiconductor layer 11 is an n-GaN layer, and the second conductivity type semiconductor layer 13 is a p-GaN layer.

[0042] The second light-emitting structure 20 may comprise a first conductivity type semiconductor layer 21, an active layer 22 having a quantum well structure, and a second conductivity type semiconductor layer 23, which are sequentially stacked. The description of the first conductivity type semiconductor layer 11, the active layer 12 having a quantum well structure, and the second conductivity type semiconductor layer 13 of the first light-emitting structure 10 may be applied to the first conductivity type semiconductor layer 21, the active layer 22 having a quantum well structure, and the second conductivity type semiconductor layer 23 of the second light-emitting structure 20. The third light-emitting structure 30 comprises a first conductivity type semiconductor layer 31, an active layer 32 having a quantum well structure, and a second conductivity type semiconductor layer 33, which are sequentially stacked. The description of the first conductivity type semiconductor layer 11, the active layer 12 having a quantum well structure, and the second conductivity type semiconductor layer 13 of the first light-emitting structure 10 may be applied to the first conductivity type semiconductor layer 31, the active layer 32 having a quantum well structure, and the second conductivity type semiconductor layer 33 of the third light-emitting structure 30.

[0043] For example, a third light-emitting structure 30 located on the light-emitting side of the light-emitting element 1, i.e., forming the upper layer of the light-emitting section 100, can emit red light, for example, light in the wavelength range of 630 ± 20 nm. The luminous efficiency of the third light-emitting structure 30 that emits red light is lower than that of light-emitting structures that emit light of other hues. By positioning the third light-emitting structure 30 that emits red light as the uppermost layer of the light-emitting section 100, via holes for forming conductive via structures can be prevented from being formed in the active layer 32 of the third light-emitting structure 30. Therefore, a decrease in the luminous efficiency of the third light-emitting structure 30 that emits red light can be prevented. The first light-emitting structure 10 and the second light-emitting structure 20 can emit, for example, blue light (for example, light in the wavelength range of 460 ± 20 nm) and green light (for example, light in the wavelength range of 530 ± 20 nm), respectively.

[0044] The light-emitting section 100 is formed by sequentially stacking the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. In this embodiment, the side surface 103 of the light-emitting section 100 is aligned with the stacking direction of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. Here, "aligned" does not mean strictly parallel to the stacking direction, but includes the natural inclination that occurs during the mesa etching process of the light-emitting section 100.

[0045] The common electrode 40 is an electrode common to the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. The common electrode 40 can be electrically connected to the first conductivity type semiconductor layers 11, 21, 31 or the second conductivity type semiconductor layers 13, 23, 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. In this embodiment, the common electrode 40 is electrically connected to the second conductivity type semiconductor layers 13, 23, 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. In this embodiment, since the second conductivity type semiconductor layers 13, 23, 33 are p-type semiconductor layers, the common electrode 40 can be referred to as a p-type common electrode. The common electrode 40 is provided on the side surface 103 of the light-emitting section 100. The side surface 103 of the light-emitting section 100 is the surface connecting the upper surface 101 and the lower surface 102 of the light-emitting section 100. The common electrode 40 is in contact with the sides 13s, 23s, and 33s of the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. The common electrode 40 extends along the side 103 of the light-emitting section 100 in the stacking direction of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure, and may extend entirely or partially in the circumferential direction. That is, the common electrode 40 may surround the entire side 103 of the light-emitting section 100, or partially surround the side 103 of the light-emitting section 100. The common electrode 40 may extend to the upper surface 101 of the light-emitting section 100, i.e., the upper surface of the second conductivity type semiconductor layer 33 of the third light-emitting structure 30. The common electrode 40 may completely cover the upper surface 101 of the light-emitting section 100, i.e., the upper surface of the second conductivity type semiconductor layer 33 of the third light-emitting structure 30. The common electrode 40 may contain an electrode material. The electrode material may include, for example, Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The common electrode 40 may include a transparent electrode material. The transparent electrode material may include, for example, ITO.

[0046] The insulating layer 60 insulates the sides 11s, 21s, 31s of the first conductivity type semiconductor layers 11, 21, 31 and the sides 12s, 22s, 32s of the active layers 12, 22, 32 of the first conductivity type semiconductor layers 11, 21, 31, and the third emission structure 30 from the common electrode 40. The insulating layer 60 may comprise a first insulating layer 61, a second insulating layer 62, and a third insulating layer 63. The first insulating layer 61 is interposed between the common electrode 40 and the sides 11s, 12s of the first conductivity type semiconductor layer 11 and the active layer 12 of the first emission structure 10. The second insulating layer 62 is interposed between the common electrode 40 and the sides 21s, 22s of the first conductivity type semiconductor layer 21 and the active layer 22 of the second emission structure 20. The third insulating layer 63 is interposed between the common electrode 40 and the first conductive semiconductor layer 31 and the active layer 32 of the third light-emitting structure 30, specifically between the sides 31s and 32s. The material of the insulating layer 60 is not particularly limited. For example, the insulating layer 60 may contain a dielectric material. Dielectric materials include SiO2, TiO2, Si3N4, and AlO2. x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x , or various combinations thereof. The thickness of the insulating layer 60 may be between 5 nm and 50 nm.

[0047] In one embodiment, the side surfaces 11s, 21s, 31s of the first conductivity type semiconductor layers 11, 21, 31 and the side surfaces 12s, 22s, 32s of the active layers 12, 22, 32 of the first conductivity type semiconductor layers 13, 23, 33 of the first conductivity type semiconductor layers 13, 23, 33 of the first conductivity type semiconductor layers 10, second emission structure 20, and third emission structure 30 can have concave steps formed inward from the side surfaces 13s, 23s, 33s of the second conductivity type semiconductor layers 13, 23, 33 of the first emission structure 10, second emission structure 20, and third emission structure 30. As a result, a recess 50 is formed on the side surface 103 of the light-emitting portion 100, including a first recess 51, a second recess 52, and a third recess 53, each having a concave step formed inward. The step difference 50S of the recess 50, that is, the step difference between the sides 11s, 21s, 31s of the first conductivity type semiconductor layers 11, 21, 31 and the sides 12s, 22s, 32s of the active layers 12, 22, 32 and the sides 13s, 23s, 33s of the second conductivity type semiconductor layers 13, 23, 33 of the first conductivity type semiconductor layers 13, 23, 33 of the first emission structure 10, the second emission structure 20, and the third emission structure 30, can be 0.5 μm or less.

[0048] The insulating layer 60 may be provided in the recess 50. That is, the first insulating layer 61, the second insulating layer 62, and the third insulating layer 63 may be provided in the first recess 51, the second recess 52, and the third recess 53, respectively. The first recess 51 exposes the side surfaces 11s, 12s of the first conductivity semiconductor layer 11 and the active layer 12 of the first light-emitting structure 10, and a portion of the lower surface of the second conductivity semiconductor layer 13. The first insulating layer 61 may cover the exposed portions of the side surfaces 11s, 12s of the first conductivity semiconductor layer 11 and the active layer 12 of the first light-emitting structure 10, and the lower surface of the second conductivity semiconductor layer 13. The second recess 52 exposes a portion of the upper surface of the second conductivity semiconductor layer 13 of the first light-emitting structure 10, and the side surfaces 21s, 22s of the first conductivity semiconductor layer 21 and the active layer 22 of the second light-emitting structure 20, and a portion of the lower surface of the second conductivity semiconductor layer 23. The second insulating layer 62 can cover the exposed portion of the upper surface of the second conductivity semiconductor layer 13 of the first light-emitting structure 10, and the exposed portion of the lower surface of the first conductivity semiconductor layer 21 and active layer 22 and the second conductivity semiconductor layer 23 of the second light-emitting structure 20. The third recess 53 exposes a portion of the upper surface of the second conductivity semiconductor layer 23 of the second light-emitting structure 20, and the exposed portions of the lower surface of the first conductivity semiconductor layer 31 and active layer 32 and the first conductivity semiconductor layer 33 of the third light-emitting structure 30. The third insulating layer 63 can cover the exposed portion of the upper surface of the second conductivity semiconductor layer 23 of the second light-emitting structure 20, and the exposed portion of the lower surface of the first conductivity semiconductor layer 31 and active layer 32 and the second conductivity semiconductor layer 33 of the third light-emitting structure 30.

[0049] Multiple individual electrodes are provided on the lower surface 102 of the light-emitting section 100. In this embodiment, the multiple individual electrodes may include a first individual electrode 71, a second individual electrode 72, and a third individual electrode 73. The first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 are in contact with the first conductivity type semiconductor layers 11, 21, and 31 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, respectively. The fact that the multiple individual electrodes are provided on the lower surface 102 of the light-emitting section 100 means that the multiple individual electrodes are provided on the lower side of the light-emitting section 100, rather than the upper side, with reference to the stacking direction of the multiple light-emitting structures 10, 20, and 30. With respect to the first individual electrode 71, the lower surface 102 of the light-emitting portion 100 refers to the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10, and with respect to the second individual electrode 72 and the third individual electrode 73, the lower surface 102 of the light-emitting portion 100 refers to the lower surface of the passivation layer 74 provided on the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10.

[0050] The first individual electrode 71 is provided on the lower surface 102 of the light-emitting section 100. The first individual electrode 71 may include a first electrode pad 71a that contacts the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10 which forms the lower surface 102 of the light-emitting section 100. The second individual electrode 72 and the third individual electrode 73 may have a conductive via structure. The second individual electrode 72 may include a second electrode pad 72a that is positioned on the lower surface 102 of the light-emitting section 100 so as to be insulated from the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10, and a second conductive via 72b that electrically connects the second electrode pad 72a to the first conductivity type semiconductor layer 21 of the second light-emitting structure 20. That is, the second individual electrode 72 penetrates the first light-emitting structure 10 and contacts the first conductivity type semiconductor layer 21 of the second light-emitting structure 20. The passivation 72c insulates the second conductive via 72b from the first light-emitting structure 10. The third individual electrode 73 may include a third electrode pad 73a positioned on the lower surface 102 of the light-emitting portion 100 so as to be insulated from the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10, and a third conductive via 73b that electrically connects the third electrode pad 73a to the first conductivity type semiconductor layer 31 of the third light-emitting structure 30. That is, the third individual electrode 73 penetrates the first light-emitting structure 10 and the second light-emitting structure 20 and contacts the first conductivity type semiconductor layer 31 of the third light-emitting structure 30. The passivation 73c insulates the third conductive via 73b from the first light-emitting structure 10 and the second light-emitting structure 20. The second individual electrode 72 and the third individual electrode 73 are electrically insulated from the first conductivity type semiconductor layer 11 of the first light-emitting structure 10. For example, a passivation layer 74 may be interposed between the second electrode pad 72a and the third electrode pad 73a and the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10.

[0051] The light-emitting element 1 can be bonded to the substrate 200 of the display panel. The substrate 200 of the display panel may have bonding pads 201, 202, and 203 corresponding to the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73, respectively. Although not shown in the drawings, the substrate 200 of the display panel may also have bonding pads corresponding to the common electrode 40. In Figure 1, the substrate 200 of the display panel is shown separated from the light-emitting element 1.

[0052] In the case of a vertical light-emitting element in which three light-emitting structures are stacked, six electrodes are required to drive each light-emitting structure. If electrodes are formed individually for each light-emitting structure, five of the electrodes will have conductive via structures. When five electrodes in a vertical light-emitting element have conductive via structures, the light-emitting area of ​​each light-emitting structure is reduced by the area occupied by the conductive vias, which can decrease the luminous efficiency. According to the present invention, one side of the p-type and n-type electrodes of the multiple light-emitting structures, for example, the p-type electrode, is formed as a single common electrode, and the other side of the p-type and n-type electrodes, for example, the n-type electrode, is formed as individual electrodes. The common electrode is formed on the side surface of the light-emitting portion formed by stacking the light-emitting structures. This makes it possible to maximize the size of the light-emitting element 1, i.e., the pixel size. In addition, the number of conductive via structures can be reduced to, for example, two, resulting in an increase in the light-emitting area, an increase in luminous efficiency, and a decrease in power consumption.

[0053] Figure 3 is a schematic cross-sectional view of a light-emitting element 1a according to an exemplary embodiment. The light-emitting element 1a of this embodiment differs from the light-emitting element 1 shown in Figure 1 in that it further includes a reflective layer 80 and a lens 90. The differences will be mainly described below, and components that perform the same function will be given the same reference numerals, and redundant explanations will be omitted.

[0054] Referring to Figure 3, the light-emitting element 1a further comprises a reflective layer 80. The reflective layer 80 may surround the side surface 103 of the light-emitting section 100. The reflective layer 80 may surround the surface of the light-emitting section 100 excluding the top surface 101, i.e., the bottom surface 102 and the side surface 103. In this case, the common electrode 40 may include a transparent electrode material, such as ITO. The reflective layer 80 reflects the light generated by the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 so that it can be emitted to the top surface 101 of the light-emitting section 100. This can improve the luminous efficiency of the light-emitting element 1a. The reflective layer 80 may be formed from a reflective material. Connecting pads 81, 82, and 83 may be formed on the reflective layer 80 for electrically connecting the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 to the substrate 200 of the display panel. The connecting pads 81, 82, and 83 can be in contact with the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73, respectively, and electrically isolated from the reflective layer 80. In this case, the reflective layer 80 can be formed from a reflective conductive material. For example, the conductive material may include Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. A passivation layer 85 may be interposed between the common electrode 40 and the reflective layer 80 for insulation between the common electrode 40 and the reflective layer 80. The connecting pads 81, 82, and 83 can be electrically isolated from the reflective layer 80 by the passivation layer 85. The passivation layer 85 may include a light-transmitting insulating material. For example, the light-transmitting insulating material may include SiO2.

[0055] Referring to Figure 3, the light-emitting element 1a may further include a lens 90. The lens 90 may be provided on the upper surface 101 of the light-emitting section 100. The lens 90 may be formed, for example, by thermoforming a photoresist. The lens 90 can adjust the emission angle of the light generated in the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 and emitted through the upper surface 101 of the light-emitting section 100. This allows light to be emitted from the light-emitting element 1a within a desired angular range.

[0056] In the embodiments described above, the side surface 103 of the light-emitting section 100 is aligned with the stacking direction of the light-emitting structures 10, 20, and 30, but is not limited thereto. The side surface of the light-emitting section may have a predetermined inclination angle. Figure 4 is a schematic cross-sectional view of a light-emitting element 1b according to an exemplary embodiment. The following description will focus on the differences between this element and the light-emitting elements 1 and 1a described above, and components that perform the same function will be given the same reference numerals, and redundant explanations will be omitted.

[0057] Referring to Figure 4, the light-emitting element 1b of this embodiment includes a light-emitting section 100b. The light-emitting section 100b differs from the light-emitting section 100 shown in Figures 1 to 3 in that it has a side surface 103b that is inclined to extend outward toward the third light-emitting structure 30 in the first light-emitting structure 10. The description relating to the light-emitting section 100 applies to the light-emitting section 100b. The light-emitting section 100b may include the first light-emitting structure 10, the second light-emitting structure 20, the third light-emitting structure 30, and light-transmitting insulating layers 91, 92. The common electrode 40b is provided on the inclined side surface 103b of the light-emitting section 100b. In this embodiment, the common electrode 40b is provided on the side surface 103b of the light-emitting section 100b and does not extend to the top surface 101b. The description relating to the common electrode 40 shown in Figures 1 to 3 applies to the common electrode 40b. The insulating layer 60b insulates the sides of the first conductivity type semiconductor layers 11, 21, and 31 and the sides of the active layers 12, 22, and 32 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 from the common electrode 40. The description of the insulating layer 60 shown in Figures 1 to 3 applies to the insulating layer 60b. The insulating layer 60b is provided in a recess 50b provided on the side surface 103b of the light-emitting portion 100b. The description of the recess 50 applies to the recess 50b. A light-transmitting insulating layer 91 may be provided on the upper surface of the third light-emitting structure 30. The light-transmitting insulating layer 91 may contain, for example, SiO2 or SiN. A light-transmitting insulating layer 92 may be provided on the lower surface of the first light-emitting structure 10. The light-transmitting insulating layer 92 may contain, for example, SiO2 or SiN. Therefore, the upper surface 101b of the light-emitting portion 100b is the upper surface of the light-transmitting insulating layer 91, and the lower surface 102b of the light-emitting portion 100b is the lower surface of the light-transmitting insulating layer 92.

[0058] By employing a light-emitting section 100b with a side surface 103b that widens toward the third light-emitting structure 30, the light generated by the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 is directed toward the upper surface 101b of the light-emitting section 100b, which is the emission side, thus potentially improving the light extraction efficiency.

[0059] The light-emitting element 1b of this embodiment comprises a first individual electrode 71, a second individual electrode 72, and a third individual electrode 73. The first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 are provided on the lower surface 102b of the light-emitting portion 100b, that is, on the lower surface of the light-transmitting insulating layer 92. The first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 all have a conductive via structure. The first individual electrode 71 may comprise a first electrode pad 71a provided on the lower surface 102b of the light-emitting portion 100b, and a first conductive via 71b that electrically connects the first electrode pad 71a to the first conductivity type semiconductor layer 11 of the first light-emitting structure 10. The first conductive via 71b may penetrate the light-transmitting insulating layer 92 and extend into the interior of the first conductivity type semiconductor layer 11. Similarly, the second individual electrode 72 and the third individual electrode 73 may include a second electrode pad 72a and a third electrode pad 73a provided on the lower surface 102b of the light-emitting portion 100b, and a second conductive via 72b and a third conductive via 73b that electrically connect the second electrode pad 72a and the third electrode pad 73a to the first conductivity type semiconductor layers 21 and 31 of the second light-emitting structure 20 and the third light-emitting structure 30. The second conductive via 72b may extend through the light-transmitting insulating layer 92 and the first light-emitting structure 10 into the first conductivity type semiconductor layer 21 of the second light-emitting structure 20. The third conductive via 73b may extend through the light-transmitting insulating layer 92 and the first light-emitting structure 10 and the second light-emitting structure 20 into the first conductivity type semiconductor layer 31 of the third light-emitting structure 30.

[0060] Figure 5 is a schematic cross-sectional view of a light-emitting element 1c according to an exemplary embodiment. The light-emitting element 1c of this embodiment differs from the light-emitting element 1b shown in Figure 4 in that it further includes a reflective layer 80b, a scattering pattern 93, and a lens 90b. The differences will be explained below, and components that perform the same function will be given the same reference numerals, and redundant explanations will be omitted.

[0061] Referring to Figure 5, the reflective layer 80b surrounds the side surface 103b of the light-emitting portion 100b. The description of the reflective layer 80 in Figures 1 to 3 applies to the reflective layer 80b. The passivation layer 85b insulates the common electrode 40b from the reflective layer 80b. The description of the passivation layer 85 in Figures 1 to 3 applies to the passivation layer 85b.

[0062] A scattering pattern 93 may be provided on the upper surface 101b of the light-emitting section 100b, that is, on the light-transmitting insulating layer 91. A lens 90b may be provided on the scattering pattern 93. Of the light emitted by the active layers 12, 22, and 32 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, light whose incident angle to the light-transmitting insulating layer 91 is greater than or equal to the critical angle passes through the light-transmitting insulating layer 91 and is emitted to the outside, while the remaining light is totally reflected into the interior of the light-emitting section 100b. This trapped light, captured inside the light-emitting element 1c by total internal reflection, is one factor that reduces the light extraction efficiency of the light-emitting element 1c. The scattering pattern 93 may be, for example, an uneven pattern that can scatter light. When light emitted by the active layers 12, 22, and 32 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 is incident on the scattering pattern 93, it is scattered by the scattering pattern 93. As a result, the light emitted from the light-emitting element 1c has a uniform light intensity distribution. Furthermore, when light captured inside the light-emitting element 1c by internal total internal reflection is incident on the scattering pattern 93, it is scattered and its direction of propagation is changed. In this way, the scattering pattern 93 scatters the light captured inside the light-emitting element 1c by internal total internal reflection, thereby changing its direction of propagation and causing it to be emitted from the light-emitting element 1c. This makes it possible to realize a light-emitting element 1c with improved light extraction efficiency. Although not shown in the drawings, the scattering pattern 93 can also be applied to the light-emitting element 1 and light-emitting element 1a shown in Figures 1 to 3. For example, although not shown in the drawings, a scattering pattern may be provided on the upper surface 101 of the light-emitting part 100 from the light-emitting element 1a shown in Figure 3, and a lens 90 may be provided on the scattering pattern.

[0063] The planar arrangement of the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 is not particularly limited. Figures 6, 7, and 8 show examples of planar arrangements of the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73. For example, referring to Figure 6, the second individual electrode 72 and the third individual electrode 73 may be arranged inside the rectangular first individual electrode 71, spaced apart from each other. Referring to Figure 7, the second individual electrode 72 and the third individual electrode 73 may be arranged adjacent to two spaced-apart edges of the rectangular first individual electrode 71. Referring to Figure 8, the rectangular first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 may be arranged in the horizontal or vertical direction.

[0064] The following describes embodiments of the manufacturing method for light-emitting elements. Figures 9A to 9M show an example of the manufacturing method for the light-emitting elements 1 and 1a shown in Figures 1 and 3.

[0065] First, a process for forming the light-emitting portion 100 is carried out. Referring to Figure 9A, the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 are sequentially stacked and grown on a growth substrate (not shown). The growth substrate is a growth substrate for semiconductor single crystal growth, and for example, a silicon (Si) substrate, a silicon carbide (SiC) substrate, a sapphire substrate, etc., may be used. In addition, substrates made of materials suitable for the growth of light-emitting structures formed on the growth substrate, such as AlN, AlGaN, ZnO, GaAs, MgAl2O4, MgO, LiAlO2, LiGaO2, and GaN, may be used. Although not shown, if necessary, a buffer layer necessary for the epitaxial growth of the light-emitting structure may be provided on the surface of the growth substrate, and the light-emitting structure may grow on the buffer layer.

[0066] For example, a first light-emitting structure 10 can be formed by sequentially growing a first conductivity type semiconductor layer 11, an active layer 12, and a second conductivity type semiconductor layer 13 on a growth substrate. The first light-emitting structure 10 can be formed from a III-V nitride semiconductor material. III-V nitride semiconductor materials may include, for example, GaN, InGaN, AlInGaN, AlGaInP, etc. In this embodiment, the first light-emitting structure 10 is formed from a GaN-based semiconductor material. The first conductivity type semiconductor layer 11 may be, for example, an n-GaN layer doped with n-type impurities. Si, Ge, Se, Te, etc. can be used as n-type impurities. The active layer 12, as a layer that emits light by electron-hole recombination, may have a single quantum well or a multi-quantum well structure as described above. For example, a quantum well layer and a barrier layer may be paired in the form of InGaN / GaN, InGaN / InGaN, InGaN / AlGaN, or InGaN / InAlGaN to form a quantum well structure, and the band gap energy may be controlled by the composition ratio of indium (In) in the material layer containing indium (In), thereby adjusting the emission wavelength band. The second conductivity type semiconductor layer 13 is a p-GaN layer doped with p-type impurities. Mg, Zn, Be, etc., may be used as p-type impurities. The description relating to the first emission structure 10 may be applied to the second emission structure 20 and the third emission structure 30. The first emission structure 10, the second emission structure 20, and the third emission structure 30 may be formed by hybrid vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), metal-organic vapor phase epitaxy (MOVPE), metal-organic chemical vapor deposition (MOCVD), other known methods, or a combination thereof. This forms an epistructure 300 including the light-emitting part 100.

[0067] Referring to Figure 9B, a mask layer 301 is formed on the upper surface of the third light-emitting structure 30, and the epitaxial structure 300 is mesa-etched. The mask layer 301 may be, for example, a SiN layer. Etching can be carried out in a dry etching process or a wet etching process. A dry etching process may utilize, for example, inductively coupled plasma (ICP). A wet etching process may be carried out using, for example, a potassium hydroxide (KOH) solution or a tetramethylammonium hydroxide (TMAH) solution as the etching solution.

[0068] Next, a step is performed to form the recess 50. For this purpose, the side surface of the epitaxial structure 300, i.e., the side surface 103 of the light-emitting portion 100, is etched. Etching can be performed with an OH-based etchant, such as a potassium hydroxide (KOH) solution or a tetramethylammonium hydroxide (TMAH) solution. The etching rate of these etchants on GaN-based materials depends on whether the GaN-based material is doped and the type of doping agent. For example, the etching rate of these etchants on n-GaN is much faster than the etching rate on p-GaN. In fact, n-GaN is etched very quickly by these etchants, while p-GaN is etched negligibly slowly. In this way, the difference in etching rate due to the doping agent can be used to selectively etch the first conductive material layer, which is the n-GaN layer, and the undoped active layer. The upper surface 101 of the light-emitting portion 100 is protected by the mask layer 301.

[0069] Through such a selective etching process, as shown in FIG. 9C, steps are formed inward from the side surfaces 13s of the second-conductive-type semiconductor layer 13 on the side surfaces 11s, 12s of the first-conductive-type semiconductor layer 11 and the active layer 12 of the first light-emitting structure 10, and the first recess 51 is formed. Similarly, steps are formed inward from the side surfaces 23s of the second-conductive-type semiconductor layer 23 on the side surfaces 21s, 22s of the first-conductive-type semiconductor layer 21 and the active layer 22 of the second light-emitting structure 20, and the second recess 52 is formed. Steps are formed inward from the side surfaces 33s of the second-conductive-type semiconductor layer 33 on the side surfaces 31s, 32s of the first-conductive-type semiconductor layer 31 and the active layer 32 of the third light-emitting structure 30, and the third recess 53 is formed. A recess 50 including the first recess 51, the second recess 52, and the third recess 53 may be formed on the side surface 103 of the light-emitting portion 100. The step amount 50S of the recess 50 may be determined by the etching time. The etching time may be adjusted so that the step amount 50S is 0.5 μm or less.

[0070] Next, an insulating layer 60 is formed. Referring to FIG. 9D, an insulating material layer 302 is formed. The insulating material layer 302 may be formed on the side surface 103 of the light-emitting portion 100 including the recess 50 and the upper surface of the mask layer 301. The insulating material is not particularly limited. For example, the insulating material may include a dielectric material. The dielectric material may be SiO2, TiO2, Si3N4, AlO x 、AlO x N y 、Ta2O5、TiN、AlN、ZrO2、TiAlN、TiSiN、HfO x, or various combinations thereof. The thickness of the insulating material layer 302 may be between 5 nm and 50 nm. In this embodiment, the insulating material layer 302 is formed of SiO2, which is a light-transmitting insulating material. For example, the insulating material layer 302 may be formed by sputtering, atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), other known methods, or a combination thereof. In this embodiment, the light-transmitting insulating material layer 302 is formed by atomic layer deposition.

[0071] As shown in Figure 9E, by removing the light-transmitting insulating material layer 302 formed on the sides 13s, 23s, and 33s of the second conductivity type semiconductor layers 13, 23, and 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, an insulating layer 60 including a first insulating layer 61, a second insulating layer 62, and a third insulating layer 63 can be formed. This process can be carried out, for example, by a dry etching process.

[0072] Next, the process of forming the common electrode 40 is carried out. First, the mask layer 301 is removed to expose the upper surface 101 of the light-emitting section 100. Then, the electrode material can be deposited onto the upper surface 101 and side surface 103 of the light-emitting section 100. The electrode material covers the side surfaces 13s, 23s, 33s and the insulating layer 60 of the second conductivity type semiconductor layers 13, 23, 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, and can cover up to the exposed upper surface 101 of the light-emitting section 100. As a result, a common electrode 40 can be formed that is in contact with the side surfaces 13s, 23s, 33s of the second conductivity type semiconductor layers 13, 23, 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, as shown in Figure 9F. The electrode material may include, for example, Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The electrode material may include a transparent electrode material, such as ITO. This process can be carried out by, for example, sputtering, atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), other known methods, or a combination thereof. In this embodiment, the common electrode 40 is formed by atomic layer deposition.

[0073] Next, with reference to Figures 9G to 9J, the process of forming the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 will be described. As shown in Figure 9G, a dummy substrate 304 is attached to the common electrode 40 formed on the upper surface 101 of the light-emitting section 100, and then the light-emitting section 100 is covered. The lower surface 102 of the light-emitting section 100, which is exposed on the upper side, that is, the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10, is polished to make it flat. At the same time, the portion of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10 that protrudes from the side surface of the common electrode 40 (Figure 9F: 11a) is removed. As shown in Figure 9H, via holes 305 and 306 are formed extending downward from the lower surface 102 of the light-emitting section 100. The via holes 305 and 306 can be formed by an etching process. Via hole 305 extends from the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10, through the first light-emitting structure 10, to the first conductivity type semiconductor layer 21 of the second light-emitting structure 20. Via hole 305 may partially extend into the interior of the first conductivity type semiconductor layer 21 of the second light-emitting structure 20. Via hole 306 extends from the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10, through the first light-emitting structure 10 and the second light-emitting structure 20, to the first conductivity type semiconductor layer 31 of the third light-emitting structure 30. Via hole 306 may partially extend into the interior of the first conductivity type semiconductor layer 31 of the third light-emitting structure 30.

[0074] As shown in Figure 9I, an insulating material is deposited on the lower surface 102 of the light-emitting portion 100, that is, on the lower surface of the first conductive semiconductor layer 11 of the first light-emitting structure 10 and on the inner walls of the via holes 305 and 306 to form a passivation layer 74 and passivations 72c and 73c. ​​The insulating material is not particularly limited and can be, for example, SiO2, TiO2, Si3N4, AlO x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x, or various combinations thereof. This process can be performed, for example, by sputtering, atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), other known methods, or combinations thereof. An opening 74a is formed in the passivation layer 74 to expose the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10.

[0075] As shown in Figure 9J, electrode material is deposited through the opening 74a of the passivation layer 74 onto the lower surface 102 of the light-emitting section 100, that is, onto the lower surface of the first conductive semiconductor layer 11 of the first light-emitting structure 10, to form a first electrode pad 71a. This forms the first individual electrode 71. In addition, electrode material is deposited on the side walls of the via holes 305 and 306 and onto the passivation layer 74 to form a second electrode pad 72a and a third electrode pad 73a, and a second conductive via 72b and a third conductive via 73b. This forms the second individual electrode 72 and the third individual electrode 73.

[0076] After completing the process shown in Figure 9J and covering the light-emitting section 100, bonding can be performed to the display panel substrate 200, which is provided with bonding pads 201, 202, and 203 corresponding to the first individual electrode 71, second individual electrode 72, and third individual electrode 73, respectively, as shown in Figure 9K. Subsequently, the dummy substrate 304 can be removed. This allows the light-emitting element 1 shown in Figure 1 to be manufactured.

[0077] Next, the process of forming the reflective layer 80 and the passivation layer 85 will be described. After completing the process shown in Figure 9J, the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 are partially masked, and an insulating material is laminated on the outer surface of the light-emitting part 100. After that, when the mask is removed, the passivation layer 85 is formed as shown in Figure 9L. Contact holes 307, 308, and 309 are formed in the passivation layer 85, exposing the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73. The insulating material is not particularly limited and can be, for example, SiO2, TiO2, Si3N4, AlO x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x , or various combinations thereof. This process can be performed, for example, by sputtering, atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), other known methods, or combinations thereof. In this embodiment, the passivation layer 85 is formed by atomic layer deposition.

[0078] As shown in Figure 9M, a reflective material, such as a reflective conductive material, is laminated around the outer periphery of the passivation layer 85 to form a reflective layer 80. For example, the conductive material may include Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The passivation layer 85 can electrically isolate the reflective layer 80 from the common electrode 40. The conductive material can fill the contact holes 307, 308, and 309. After laminating the conductive material, the conductive material layer is patterned so that the conductive material filling the contact holes 307, 308, and 309 is separated from each other. This can form connecting pads 81, 82, and 83 for connecting the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 to the outside.

[0079] The light-emitting section 100 is covered in the state shown in Figure 9M, and the dummy substrate 304 is removed by bonding it to the substrate 200 of the display panel as shown in Figure 3. Subsequently, a lens 90 can be formed on the upper surface 101 of the light-emitting section 100 or on the surface of the common electrode 40 formed thereon. The method for forming the lens 90 is not particularly limited. Exemplarily, a thermoplastic material is laminated on the upper surface 101 of the light-emitting section 100 or on the surface of the common electrode 40 formed thereon to form a light-transmitting layer. For example, the thermoplastic material may include photoresist, polyester, acrylic, or epoxy. The form of the light-transmitting layer may be, for example, cylindrical. Subsequently, for example, a thermal reflow process can be performed to form the rectangular light-transmitting layer into, for example, a dome-shaped lens. The curvature of the lens 90 can be adjusted by the surface energy of the upper surface 101 of the light-emitting part 100 or the surface of the common electrode 40 formed thereon, the contact angle of the light-transmitting layer, the thickness and width of the light-transmitting layer, the thermal reflow process temperature, and so on. This allows for the manufacture of the light-emitting element 1a shown in Figure 3.

[0080] Figures 10A to 10L show an example of a manufacturing method for the light-emitting elements 1b and 1c shown in Figures 4 and 5.

[0081] First, a process of forming the light-emitting section 100b is carried out. Referring to Figure 10A, the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 are sequentially laminated and grown on a growth substrate (not shown). The process of sequentially growing the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30 is as described with reference to Figure 9A. This forms the epitaxial structure 400. Subsequently, a light-transmitting insulating material is laminated on the third light-emitting structure 30 to form a light-transmitting insulating layer 401, and a dummy substrate 402 is attached to the light-transmitting insulating layer 401. The light-transmitting insulating material may include, for example, SiO2 or SiN. The light-transmitting insulating layer 401 may be formed, for example, by atomic layer deposition. A dummy substrate 402 is attached to the light-transmitting insulating layer 401.

[0082] Next, as shown in Figure 10B, the epitaxial structure 400 is covered, and a light-transmitting insulating material is laminated onto the exposed surface 404 of the epitaxial structure 400 that is exposed from above, i.e., the lower surface of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10, to form a light-transmitting insulating layer 403. The light-transmitting insulating material may include, for example, SiO2 or SiN. The light-transmitting insulating layer 403 may be formed, for example, by atomic layer deposition. The epitaxial structure 400 is mesa-etched using the light-transmitting insulating layer 403 as a mask. Etching can be carried out in a dry etching process or a wet etching process. The dry etching process may utilize, for example, inductively coupled plasma (ICP). The wet etching process may be carried out using, for example, a potassium hydroxide (KOH) solution or a tetramethylammonium hydroxide (TMAH) solution as the etching solution. This results in the formation of a light-emitting section 100b comprising a first light-emitting structure 10, a second light-emitting structure 20, and a third light-emitting structure 30, and light-transmitting insulating layers 91 and 92, and having an inclined side surface 103b.

[0083] Next, a step is performed to form the recess 50b. For this purpose, the side surface 103b of the light-emitting portion 100b is etched. Etching can be performed with an OH-based etchant, such as a potassium hydroxide (KOH) solution or a tetramethylammonium hydroxide (TMAH) solution. The etching rate of these etchants on GaN-based materials depends on whether the GaN-based material is doped and the type of doping agent. For example, the etching rate of these etchants on n-GaN is much faster than the etching rate on p-GaN. In fact, n-GaN is etched at a very fast rate by these etchants, while p-GaN is etched at a negligibly slow rate. In this way, the difference in etching rates due to the doping agent can be used to selectively etch the first conductive material layer, which is the n-GaN layer, and the undoped active layer. Through this selective etching process, as shown in Figure 10C, the sides 11s and 12s of the first conductivity type semiconductor layer 11 and active layer 12 of the first light-emitting structure 10 form a step inward from the side 13s of the second conductivity type semiconductor layer 13, forming the first recess 51. Similarly, the sides 21s and 22s of the first conductivity type semiconductor layer 21 and active layer 22 of the second light-emitting structure 20 form a step inward from the side 23s of the second conductivity type semiconductor layer 23, forming the second recess 52, and the sides 31s and 32s of the first conductivity type semiconductor layer 31 and active layer 32 of the third light-emitting structure 30 form a step inward from the side 33s of the second conductivity type semiconductor layer 33, forming the third recess 53. A recess 50b including the first recess 51, the second recess 52, and the third recess 53 may be formed on the side 103b of the light-emitting portion 100b. The step amount 50S of the recess 50b may be determined by the etching time. The etching time can be adjusted so that the step height of 50S is 0.5 μm or less.

[0084] Next, an insulating layer 60b is formed. Referring to Figure 10D, an insulating material layer 405 is formed. The insulating material layer 405 may be formed on the side surface 103b and the bottom surface 102b of the light-emitting portion 100b including the recess 50b. The insulating material is not particularly limited. For example, the insulating material may include a dielectric material. Dielectric materials include SiO2, TiO2, Si3N4, AlO x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x , or various combinations thereof. The thickness of the insulating material layer 405 may be between 5 nm and 50 nm. In this embodiment, the insulating material layer 405 is formed of SiO2, which is a light-transmitting insulating material. For example, the insulating material layer 405 may be formed by sputtering, atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), other known methods, or combinations thereof. In this embodiment, the light-transmitting insulating material layer 405 is formed by atomic layer deposition.

[0085] By removing the insulating material layer 405 formed on the side surfaces 13s, 23s, 33s of the second conductivity type semiconductor layers 13, 23, 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, and on the lower surface 102b of the light-emitting portion 100b, an insulating layer 60b including a first insulating layer 61, a second insulating layer 62, and a third insulating layer 63 can be formed, as shown in Figure 10E. This process can be carried out, for example, by a dry etching process.

[0086] Next, a step is performed to form a common electrode 40b. The electrode material can be deposited on the lower surface 102b and the side surface 103b of the light-emitting portion 100b. The electrode material covers the side surfaces 13s, 23s, 33s and the insulating layer 60b of the second conductivity type semiconductor layers 13, 23, 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30. This allows for the formation of a common electrode 40b in contact with the side surfaces 13s, 23s, 33s of the second conductivity type semiconductor layers 13, 23, 33 of the first light-emitting structure 10, the second light-emitting structure 20, and the third light-emitting structure 30, as shown in Figure 10f. The electrode material may include, for example, Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The electrode material may also include a transparent electrode material, such as ITO. This process can be carried out, for example, by sputtering, atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), other known methods, or a combination thereof. In this embodiment, the common electrode 40b is formed by atomic layer deposition.

[0087] Next, with reference to Figures 10G and 10H, the process of forming the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 will be described. First, as shown in Figure 10G, the common electrode 40b formed on the upper surface of the light-transmitting insulating layer 403 is removed, and the exposed upper surface of the light-transmitting insulating layer 403 is polished to flatten it. After that, via holes 406, 407, and 408 are formed. Via holes 406, 407, and 408 can be formed by an etching process. Via hole 406 extends through the light-transmitting insulating layer 403 to the first conductivity type semiconductor layer 11 of the first light-emitting structure 10. Via hole 406 may partially extend into the interior of the first conductivity type semiconductor layer 11 of the first light-emitting structure 10. Via hole 407 extends through the light-transmitting insulating layer 403 and the first light-emitting structure 10 to the first conductivity type semiconductor layer 21 of the second light-emitting structure 20. Via holes 407 may partially extend into the interior of the first conductivity type semiconductor layer 21 of the second light-emitting structure 20. Via holes 408 extend through the light-transmitting insulating layer 403, the first light-emitting structure 10, and the second light-emitting structure 20 to the first conductivity type semiconductor layer 31 of the third light-emitting structure 30. Via holes 408 may partially extend into the interior of the first conductivity type semiconductor layer 31 of the third light-emitting structure 30.

[0088] Next, an insulating material is deposited on the inner walls of via holes 407 and 408 to form passivations 72c and 73c. ​​The insulating material is not particularly limited and can be, for example, SiO2, TiO2, Si3N4, AlO x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x, or various combinations thereof. This process can be performed, for example, by sputtering, atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), other known methods, or combinations thereof. In this embodiment, passivations 72c and 73c are formed by atomic layer deposition.

[0089] As shown in Figure 10H, electrode material is deposited inside via holes 406, 407, and 408 and on the lower surface of the light-transmitting insulating layer 403 to form a first conductive via 71b, a second conductive via 72b, and a third conductive via 73b, and first electrode pads 71a, 72a, and 73a, respectively, which are connected to these and placed on the surface of the light-transmitting insulating layer 403. As a result, a first individual electrode 71, a second individual electrode 72, and a third individual electrode 73 having a conductive via structure are formed on the lower surface 102b of the light-emitting portion 100b.

[0090] After covering the light-emitting part 100b in the state shown in Figure 10H, it can be bonded to the substrate 200 of the display panel, which is provided with bonding pads 201, 202, and 203 corresponding to the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73, respectively. Subsequently, the dummy substrate 402 can be removed and the light-transmitting insulating layer 401 can be planarized. The light-transmitting insulating layers 91 and 92 shown in Figure 4 can also be realized by the light-transmitting insulating layers 401 and 403. This allows the light-emitting element 1b shown in Figure 4 to be manufactured.

[0091] Next, the process of forming the reflective layer 80b and the passivation layer 85b will be described. After the process shown in Figure 10H is carried out, the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 are partially masked, and an insulating material is laminated on the outer surface of the light-emitting part 100b. After that, when the mask is removed, the passivation layer 85b is formed as shown in Figure 10I. Contact holes 409, 410, and 411 are formed in the passivation layer 85b, exposing the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73. The insulating material is not particularly limited and can be, for example, SiO2, TiO2, Si3N4, AlO x AlO x N y , Ta2O5, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO x , or various combinations thereof. This process can be performed, for example, by sputtering, atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), other known methods, or combinations thereof. In this embodiment, the passivation layer 85b is formed by atomic layer deposition.

[0092] As shown in Figure 10J, a reflective material, such as a reflective conductive material, is laminated around the outer periphery of the passivation layer 85b to form a reflective layer 80b. For example, the conductive material may include Al, Ti, Pt, Ag, Au, Pd, TiW, or various combinations thereof. The passivation layer 85b can electrically isolate the reflective layer 80b from the common electrode 40b. The conductive material can fill the contact holes 409, 410, and 411. After laminating the conductive material, the conductive material layer is patterned so that the conductive material filling the contact holes 409, 410, and 411 is separated from each other. This can form connecting pads 81, 82, and 83 for connecting the first individual electrode 71, the second individual electrode 72, and the third individual electrode 73 to the outside.

[0093] The light-emitting section 100b is covered in the state shown in Figure 10J, and the dummy substrate 402 is removed by bonding it to the substrate 200 of the display panel as shown in Figure 10K. The upper surface of the light-transmitting insulating layer 401 can be polished to flatten it. Next, a light-transmitting material layer can be formed on the upper surface of the light-transmitting insulating layer 401 and etched into a predetermined uneven pattern to form a scattering pattern 93 on the light-transmitting insulating layer 401 as shown in Figure 10L. Next, a lens 90b can be formed on the light-emitting side of the light-emitting section 100b, for example, on the scattering pattern 93. The method for forming the lens 90b is not particularly limited. Exemplarily, a thermoplastic material can be laminated on the scattering pattern 93 to form a light-transmitting layer. For example, the thermoplastic material may include photoresist, polyester, acrylic, or epoxy. The form of the light-transmitting layer may be, for example, cylindrical. Subsequently, for example, a thermal reflow process can be performed to form the rectangular light-transmitting layer into, for example, a dome-shaped lens. The curvature of the lens 90b can be adjusted by the surface energy of the scattering pattern 93, the contact angle of the light-transmitting layer, the thickness and width of the light-transmitting layer, the thermal reflow process temperature, etc. The light-transmitting insulating layers 91 and 92 shown in Figure 4 can be realized by the light-transmitting insulating layers 401 and 403, respectively. This allows for the manufacture of the light-emitting element 1c shown in Figure 5.

[0094] Figure 11 is a schematic diagram of one embodiment of a display device. Referring to Figure 11, the display device may include a display panel 7110 and a controller 7160. The display panel 7110 has a light-emitting structure 7112 and a drive circuit 7115 that switches the light-emitting structure 7112 on and off. The light-emitting structure 7112 may include a plurality of light-emitting elements as described above with reference to Figures 1 to 5. The plurality of light-emitting elements may be arranged, for example, in a two-dimensional array. The drive circuit 7115 has a plurality of switching elements for individually switching the plurality of light-emitting elements on and off. The controller 7160 inputs on-off switching signals for the plurality of light-emitting elements to the drive circuit 7115 via a video signal.

[0095] Figure 12 is a block diagram of one embodiment of an electronic device including a display. Referring to Figure 12, an electronic device 8201 may be provided within a network environment 8200. In the network environment 8200, electronic device 8201 may communicate with other electronic devices 8202 via a first network 8298 (such as a short-range wireless communication network), or with yet another electronic device 8204 and / or server 8208 via a second network 8299 (such as a long-range wireless communication network). Electronic device 8201 may communicate with electronic device 8204 through server 8208. The electronic device 8201 may include a processor 8220, memory 8230, input device 8250, acoustic output device 8255, display device 8260, audio module 8270, sensor module 8276, interface 8277, haptic module 8279, camera module 8280, power management module 8288, battery 8289, communication module 8290, subscriber identification module 8296, and / or antenna module 8297. Some of these components may be omitted from the electronic device 8201, or other components may be added. Some of these components may be embodied by a single integrated circuit. For example, the sensor module 8276 (such as a fingerprint sensor, iris sensor, or light sensor) may be embedded in the display device 8260 (such as a display).

[0096] The processor 8220 can perform various data processing or calculations by controlling one or more other components (hardware, software components, etc.) of the electronic device 8201 connected to the processor 8220 through software (such as program 8240). As part of the data processing or calculations, the processor 8220 may load instructions and / or data received from other components (such as sensor module 8276, communication module 8290) into volatile memory 8232, process the instructions and / or data stored in volatile memory 8232, and store the resulting data in non-volatile memory 8234. The processor 8220 may include a main processor 8221 (central processing unit, application processor, etc.) and auxiliary processors 8223 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can operate independently or together with it. The auxiliary processors 8223 may use less power than the main processor 8221 and perform specialized functions.

[0097] The auxiliary processor 8223 can control the functions and / or states of some components of the electronic device 8201 (such as the display device 8260, sensor module 8276, and communication module 8290) on behalf of the main processor 8221 when the main processor 8221 is in an inactive state (sleep state), or together with the main processor 8221 when the main processor 8221 is in an active state (application execution state). The auxiliary processor 8223 (such as an image signal processor or communication processor) can be implemented as part of other functionally related components (such as a camera module 8280 or communication module 8290).

[0098] Memory 8230 can store various data required by the components of the electronic device 8201 (such as the processor 8220 and the sensor module 8276). This data may include, for example, software (such as the program 8240) and input and / or output data for related instructions. Memory 8230 may include volatile memory 8232 and / or non-volatile memory 8234.

[0099] Program 8240 is stored in memory 8230 and may include operational system 8242, middleware 8244 and / or application 8246.

[0100] The input device 8250 may receive instructions and / or data used by components of the electronic device 8201 (such as the processor 8220) from outside the electronic device 8201 (such as a user). The input device 8250 may include a remote controller, microphone, mouse, keyboard, and / or digital pen (such as a stylus pen).

[0101] The acoustic output device 8255 can output an acoustic signal to the outside of the electronic device 8201. The acoustic output device 8255 may include a speaker and / or a receiver. The speaker may be used for general purposes such as multimedia playback or recording and playback, and the receiver may be used to receive incoming telephone calls. The receiver may be coupled to part of the speaker or may be embodied as a separate, independent device.

[0102] The display device 8260 may provide information visually to the outside of the electronic device 8201. The display device 8260 may include a display, a hologram device, or a projector and a control circuit for controlling said device. The display device 8260 may include the display device described in Figure 11. The display device 8260 may include touch circuitry configured to sense touches and / or sensor circuitry (such as a pressure sensor) configured to measure the intensity of the force generated by a touch.

[0103] The audio module 8270 can convert sound into electrical signals, or vice versa. The audio module 8270 can acquire sound through the input device 8250, or output sound through the speakers and / or headphones of the sound output device 8255, and / or other electronic devices (such as electronic device 8202) directly or wirelessly connected to the electronic device 8201.

[0104] The sensor module 8276 can sense the operating state of the electronic device 8201 (power, temperature, etc.) or the external environmental state (user state, etc.), and generate electrical signals and / or data values ​​corresponding to the sensed state. The sensor module 8276 may include a gesture sensor, gyro sensor, barometric pressure sensor, magnetic sensor, acceleration sensor, grip sensor, proximity sensor, color sensor, IR (Infrared) sensor, biosensor, temperature sensor, humidity sensor, and / or illuminance sensor.

[0105] Interface 8277 may support one or more designated protocols that can be used to connect electronic device 8201 directly or wirelessly with other electronic devices (such as electronic device 8202). Interface 8277 may include HDMI (High Definition Multimedia Interface), USB (Universal Serial Bus) interface, SD card interface, and / or audio interface.

[0106] The coupling terminal 8278 may include a connector that allows the electronic device 8201 to be physically connected to another electronic device (such as the electronic device 8202). The coupling terminal 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0107] The haptic module 8279 can convert electrical signals into mechanical stimuli (such as vibration or movement) or electrical stimuli that the user can perceive through touch or kinesthetic sense. The haptic module 8279 may include a motor, a piezoelectric element, and / or an electrical stimulator.

[0108] The camera module 8280 can capture still images and videos. The camera module 8280 may include a lens assembly containing one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in the camera module 8280 can collect light emitted from a subject that is the subject of the image capture.

[0109] The power management module 8288 can manage the power supplied to the electronic device 8201. The power management module 8288 can be implemented as part of a Power Management Integrated Circuit (PMIC).

[0110] Battery 8289 can supply power to components of the electronic device 8201. Battery 8289 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0111] The communication module 8290 can assist in establishing direct (wired) communication channels and / or wireless communication channels between the electronic device 8201 and other electronic devices (such as electronic devices 8202, 8204, and server 8208), and in carrying out communication over the established communication channels. The communication module 8290 may include one or more communication processors that operate independently of the processor 8220 (such as an application processor) and assist in direct and / or wireless communication. The communication module 8290 may include wireless communication modules 8292 (such as cellular communication modules, short-range wireless communication modules, and GNSS (Global Navigation Satellite System) communication modules) and / or wired communication modules 8294 (such as LAN (Local Area Network) communication modules and power line communication modules). The relevant communication modules among these communication modules may communicate with other electronic devices via a first network 8298 (a short-range communication network such as Bluetooth, WiFi Direct, or IrDA (Infrared Data Association)) or a second network 8299 (a long-range communication network such as a cellular network, the Internet, or a computer network (LAN, WAN, etc.)). Such diverse types of communication modules may be integrated into a single component (such as a single chip) or embodied by multiple separate components (multiple chips). The wireless communication module 8292 may verify and authenticate the electronic device 8201 within a communication network such as the first network 8298 and / or the second network 8299 using subscriber information (such as an International Mobile Subscriber Identifier (IMSI)) stored in the subscriber identification module 8296.

[0112] The antenna module 8297 may transmit and / or receive signals and / or power to or from an external source (such as other electronic devices). The antenna may include a chamber consisting of a conductive pattern formed on a substrate (such as a PCB). The antenna module (8297) may include one or more antennas. If multiple antennas are included, the communication module 8290 may select an antenna from among the multiple antennas that is suitable for the communication scheme used in the communication network, such as the first network 8298 and / or the second network 8299. Signals and / or power may be transmitted and / or received between the communication module 8290 and other electronic devices via the selected antenna. Other components (such as an RFIC) may be included as part of the antenna module 8297 in addition to the antenna.

[0113] Some of the components can be interconnected via communication methods between peripheral devices (such as buses, GPIO (General Purpose Input and Output), SPI (Serial Peripheral Interface), and MIPI (Mobile Industry Processor Interface)) to exchange signals (instructions, data, etc.).

[0114] Commands or data may be transmitted to or received between electronic device 8201 and external electronic device 8204 via server 8208 connected to the second network 8299. Other electronic devices 8202, 8204 may be of the same or different type as electronic device 8201. All or part of the operations performed by electronic device 8201 may be performed by one or more of the other electronic devices 8202, 8204, and 8208. For example, when electronic device 8201 needs to perform a certain function or service, instead of performing the function or service itself, it may request one or more other electronic devices to perform part or all of that function or service. One or more other electronic devices that receive the request may perform the additional function or service related to the request and transmit the results of their execution to electronic device 8201. Cloud computing, distributed computing, and / or client-server computing technologies may be used for this purpose.

[0115] The aforementioned electronic device 8201 can be applied to a variety of devices. Depending on the function of the device, the various components of the aforementioned electronic device 8201 can be appropriately modified, and components appropriate for performing the function of the device can be added. Exemplary application examples of the electronic device 8201 are described below.

[0116] Figure 13 is a diagram illustrating an exemplary application of an electronic device and one embodiment of a mobile device. The mobile device 9100 may include a display device 9110. The display device 9110 may include the display device described in Figure 11. The display device 9110 may have a foldable structure, for example, a multi-fold structure.

[0117] Figure 14 is an exemplary application example of an electronic device, illustrating one embodiment of an automotive head-up display device. The automotive head-up display device 9200 may include a display 9210 provided in a region of the vehicle and an optical path changing member 9220 that converts the optical path so that the driver can view the image generated by the display 9210. The display 9210 may include the display device described in Figure 11.

[0118] Figure 15 is a diagram illustrating an exemplary application of an electronic device, showing one embodiment of augmented reality glasses or virtual reality glasses. The augmented reality glasses (or virtual reality glasses) 9300 may include a projection system 9310 that forms an image, and an element 9320 that guides the image from the projection system 9310 to the user's eyes. The projection system 9310 may include the display device described in Figure 11.

[0119] Figure 16 is an exemplary application example of an electronic device, illustrating one embodiment of a large-scale signage. The signage 9400 may include the display device described in Figure 11. The signage 9400 is used for outdoor advertising using a digital information display and can control advertising content via a communication network. The signage 9400 can be embodied, for example, through an electronic device described with reference to Figure 12.

[0120] Figure 17 is an exemplary application example of an electronic device, illustrating one embodiment of a wearable display. The wearable display 9500 may include the display device described in Figure 11. The wearable display 9500 may be embodied through an electronic device described with reference to Figure 12.

[0121] The light-emitting elements or displays containing light-emitting elements according to the exemplary embodiments can also be applied to a variety of other products, such as rollable TVs and stretchable displays.

[0122] The light-emitting element of the present invention has been described based on embodiments illustrated in the drawings for the purpose of understanding, but these are merely examples, and a person with ordinary skill in the art will understand that a variety of modifications and equivalent other embodiments are possible therefrom. Therefore, the true scope of technical protection of the present invention must be determined by the claims. [Explanation of Symbols]

[0123] 100, 100b light-emitting part 10. First light-emitting structure 20 Second light-emitting structure 30 Third light-emitting structure 11, 21, 31 First Conductivity Semiconductor Layer 12, 22, 32 active layer 13, 23, 33 Second Conductivity Semiconductor Layer 40, 40b common electrode 50, 50b recess 60, 60b insulating layer 71, 72, 73 Individual electrodes 80, 80b reflective layer 85 Passivation Layer 90 lens 91, 92 Light-transmitting insulating layer 93 Scattering Patterns

Claims

1. It includes a first light-emitting structure, a second light-emitting structure, and a third light-emitting structure that are sequentially stacked and emit light of different wavelengths from each other, The first light-emitting structure, the second light-emitting structure, and the third light-emitting structure are each, A light-emitting section comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially, A first individual electrode, a second individual electrode, and a third individual electrode are provided on the lower surface of the light-emitting portion and are in contact with the first conductivity type semiconductor layer of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure, respectively, and at least a portion of them has a conductive via structure. A common electrode is provided on the side surface of the light-emitting portion and is in contact with the side surface of the second conductivity type semiconductor layer of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure, A light-emitting element, comprising an insulating layer that insulates the first conductivity type semiconductor layer and the side surface of the active layer of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure from the common electrode.

2. The light-emitting element according to claim 1, wherein a concave step is formed inward from the side surface of the first conductivity type semiconductor layer and the active layer of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure.

3. The light-emitting element according to claim 2, wherein the step size of the side surfaces of the first conductivity type semiconductor layer and the active layer of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure with respect to the side surfaces of the second conductivity type semiconductor layer of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure is 0.5 μm or less.

4. The light-emitting element according to claim 1, wherein the common electrode surrounds the side surface of the light-emitting part.

5. The light-emitting element according to claim 1, wherein the common electrode extends to the upper surface of the light-emitting portion.

6. The light-emitting element according to claim 1, wherein the common electrode includes a transparent electrode material.

7. The first individual electrode includes a first electrode pad that contacts the lower surface of the first conductivity type semiconductor layer of the first light-emitting structure. The second individual electrode and the third individual electrode are The light-emitting element according to claim 1, further comprising a second electrode pad and a third electrode pad disposed on the lower surface of the light-emitting portion, and a second conductive via and a third conductive via that electrically connect the second electrode pad and the third electrode pad to the second light-emitting structure and the first conductivity type semiconductor layer of the third light-emitting structure, respectively.

8. The light-emitting element according to claim 1, wherein each of the first individual electrode, the second individual electrode, and the third individual electrode includes a first electrode pad, a second electrode pad, and a third electrode pad disposed on the lower surface of the light-emitting portion, and a first conductive via, a second conductive via, and a third conductive via that electrically connect the first electrode pad, the second electrode pad, and the third electrode pad to the first conductivity type semiconductor layer of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure, respectively.

9. A reflective layer surrounding the side surface of the light-emitting portion, The light-emitting element according to claim 1, further comprising a passivation layer that insulates the common electrode from the reflective layer.

10. The light-emitting element according to claim 1, wherein the side surface of the light-emitting element is aligned with the stacking direction of the first light-emitting structure, the second light-emitting structure, and the third light-emitting structure.

11. The light-emitting element according to claim 1, wherein the side surface of the light-emitting part is inclined to gradually widen outward from the first light-emitting structure toward the third light-emitting structure.

12. The light-emitting element according to claim 1, further comprising a scattering pattern provided on the upper surface of the light-emitting element.

13. The light-emitting element according to claim 1, further comprising a lens provided on the upper surface of the light-emitting part.

14. The third light-emitting structure generates red light, as described in claim 1.

15. The light-emitting element according to claim 14, wherein the first light-emitting structure generates blue light, and the second light-emitting structure generates green light.

16. A light-emitting section includes a plurality of sequentially stacked light-emitting structures, each comprising a first conductivity semiconductor layer, an active layer, and a second conductivity semiconductor layer, respectively, A plurality of individual electrodes are provided on the lower surface of the light-emitting portion, in contact with the first conductivity type semiconductor layer of the plurality of light-emitting structures, and at least a portion of them has a conductive via structure, A common electrode provided on the side surface of the light-emitting portion and in contact with the side surface of the second conductivity type semiconductor layer of the plurality of light-emitting structures, A light-emitting element comprising an insulating layer that insulates the sides of the first conductivity type semiconductor layer and the active layer of the plurality of light-emitting structures from the common electrode.

17. The light-emitting element according to claim 16, wherein the uppermost light-emitting structure among the plurality of light-emitting structures generates red light.

18. The light-emitting element according to claim 16, wherein a concave step is formed on the side surfaces of the first conductivity type semiconductor layer and the active layer of the plurality of light-emitting structures, extending inward from the side surface of the second conductivity type semiconductor layer of the plurality of light-emitting structures.

19. A reflective layer surrounding the side surface of the light-emitting portion, The light-emitting element according to claim 16, further comprising a passivation layer that insulates the common electrode from the reflective layer.

20. A plurality of light-emitting elements according to any one of claims 1 to 19, A display panel comprising a drive circuit that performs on-off switching for the plurality of light-emitting elements, A display device including a controller that inputs on-off switching signals for the plurality of light-emitting elements to a drive circuit based on a video signal.

Images