Indication device

Abstract

To provide a display device having an imaging function. To provide a high-definition imaging device or display device. [Solution] The display device is a display device having first to third switches, first and second transistors, a capacitor, first and second wiring, and a light-receiving element. One electrode of the first switch is electrically connected to the first wiring, and the other electrode is electrically connected to the gate of the first transistor and one electrode of the capacitor. One electrode of the second switch is electrically connected to one of the source and drain of the first transistor, one electrode of the light-receiving element and the other electrode of the capacitor, and the other electrode is electrically connected to the gate of the second transistor and one electrode of the third switch. The other electrode of the third switch is electrically connected to the second wiring. The light-receiving element has the function of emitting light of a first color and the function of receiving light of a second color.

Description

Technical Field

[0001] One aspect of the present invention relates to a display device. One aspect of the present invention relates to a display device having an imaging function relates to.

[0002] Note that one aspect of the present invention is not limited to the above technical field. As the technical field of one aspect of the present invention disclosed in this specification and the like, semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices , electronic devices, lighting devices, input devices, input / output devices, driving methods thereof, or manufacturing methods thereof, can be cited as an example. A semiconductor device refers to all devices that can function by utilizing semiconductor characteristics .

Background Art

[0003] In recent years, display devices have been required to have higher definition in order to display high-resolution images. Also, in information terminal devices such as smartphones, tablet terminals, and notebook PCs (personal computers), display devices are required to have lower power consumption in addition to higher definition . Furthermore, there is a demand for display devices to which various functions are added, such as a function as a touch panel and a function of imaging fingerprints for authentication, in addition to displaying images .

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. A light-emitting element (also referred to as an EL element) that utilizes electroluminescence (hereinafter abbreviated as EL) has characteristics such as being easily thinned and lightened, being capable of responding quickly to an input signal, and being drivable using a DC constant voltage power supply, and is applied to display devices . For example, in Patent Document 1, a flexible light-emitting device to which an organic EL element is applied The optical device has been disclosed. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2014-197522 [Overview of the project] [Problems that the invention aims to solve]

[0006] One aspect of the present invention aims to provide a display device having an imaging function. One embodiment provides an imaging device or display device having a high-definition display unit or imaging unit. One of the challenges is to provide an imaging device capable of capturing high-resolution images. One objective of the present invention is to provide a device or display device. One aspect of the present invention is to provide a highly sensitive imaging device. One of the objectives of this invention is to provide an imaging device or display device capable of performing the following. One aspect of this invention aims to provide a display device capable of acquiring biometric information such as fingerprints. One aspect of the present invention aims to provide a display device that functions as a touch panel. do.

[0007] Furthermore, one aspect of the present invention aims to reduce the number of components in electronic devices. One aspect of the invention provides a display device, imaging device, or electronic device having a novel configuration. This is one of the challenges. One aspect of the present invention addresses at least one of the problems of the prior art. One of the challenges is to mitigate this as well.

[0008] Furthermore, the description of these problems does not preclude the existence of other problems. One approach does not require that all of these issues be resolved. The title can be extracted from descriptions such as the specification, drawings, and claims. [Means for solving the problem]

[0009] One aspect of the present invention comprises first to third switches, a first transistor, and a second transistor A display device having a zista, a capacitor, a first wiring, a second wiring, and a light-emitting / receiving element. The first switch has one electrode electrically connected to the first wiring, and the other electrode is connected to the first The gate of the transistor and one electrode of the capacitance are electrically connected. Second switch In this configuration, one electrode is the source and drain of the first transistor, and the other is the light-emitting / receiving element. The electrode and the other electrode of the capacitance are electrically connected, and the other electrode is the gate of the second transistor. The third switch is electrically connected to one electrode of the third switch. The electrodes are electrically connected to the second wiring. The light-emitting element has the function of emitting light of the first color and It has the function of receiving light of a second color.

[0010] Furthermore, in the above, during the first period, the first switch, the second switch, and the third The switch is in a conductive state, the first wire is supplied with a data potential, and the second wire is supplied with the first It is preferable that a potential of the following is applied. Furthermore, during the second period, the second switch and the third switch are used. It is preferable that the switch is in a conductive state and a second potential is applied to the second wiring. Furthermore, it is preferable that the second potential is lower than the first potential.

[0011] Furthermore, it is preferable to have a fourth switch in the above configuration. In this switch, one electrode is electrically connected to one electrode of a second switch, and the other electrode... It is preferable that the electrode is electrically connected to one electrode of the light-receiving element. Alternatively, the fourth switch The switch has one electrode electrically connected to either the source or drain of the first transistor. Therefore, it is preferable that the other electrode is electrically connected to one of the electrodes of the light-receiving device.

[0012] Another aspect of the present invention includes a first to sixth transistor, a capacitor, and a light-emitting / receiving element. It is a display device having a first wiring and a second wiring. The first transistor is a so One of the transistors and the drain is electrically connected to one electrode of the light-receiving element. The third transistor The sta is electrically connected to the first wiring, with one of the source and drain being connected. The other end of the transistor is electrically connected to the gate of the first transistor. The fourth transistor is One of the sources and drains is electrically connected to the gate of the second transistor, and the source and The other end of the drain is electrically connected to the second wiring. The fifth transistor has a source and One of the drains is electrically connected to the source and one of the drains of the second transistor. The sixth transistor has one of its sources and drains connected to one electrode of the light-emitting / receiving element. One end is connected to the other, and the other end is electrically connected to the gate of the second transistor. The capacitance is one end. One electrode is electrically connected to the gate of the first transistor, and the other electrode is connected to the first transistor It is electrically connected to either the source or drain of the sta. The light-emitting and receiving element is a first color It has the function of emitting light and the function of receiving light of a second color.

[0013] Furthermore, it is preferable to have a seventh transistor in the above configuration. The seventh transistor is connected to either the source or drain of the first transistor, and to the light-emitting / receiving element. It is preferable that it has a function to control conductivity between one of the electrodes.

[0014] Another aspect of the present invention is a first to fifth transistor and an eighth transistor The first is a display device having a capacitor, a light-emitting / receiving element, a first wiring, and a second wiring. The transistor has one of its source and drain being the source and drain of the eighth transistor. One side of the third transistor is electrically connected to the gate of the second transistor. In this configuration, one of the source and drain is electrically connected to the first wiring, and the source and drain The other end is electrically connected to the gate of the first transistor. The fourth transistor is, One of the drains and the source is electrically connected to the gate of the second transistor, and the other is connected to the source and the source. The other end of the wire is electrically connected to the second wire. The fifth transistor is source and discharged. One side of the rain is electrically connected to one of the source and drain terminals of the second transistor. The eighth transistor has its source and the other drain electrically connected to one electrode of the light-emitting / receiving element. The capacitance is determined by the fact that one electrode is electrically connected to the gate of the first transistor, and the other electrode is electrically connected to the gate of the first transistor. One electrode is electrically connected to either the source or the drain of the first transistor. The light-receiving element has the function of emitting light of a first color and the function of receiving light of a second color. ru.

[0015] Furthermore, it is preferable to have a third wiring in any of the above. The fifth transistor has its source and the other drain electrically connected to the third wiring. It is preferable.

[0016] Alternatively, in either of the above, the fifth transistor has a source and drain that Preferably, it is electrically connected to the first wiring.

[0017] Furthermore, in any of the above, during the first period, a data potential is applied to the first wiring. Preferably, the first potential is applied to the second wiring. Also, during the second period, the second It is preferable that a second potential is applied to the wiring. In this case, the second potential is the same as the first potential. A rank lower than the specified level is preferable.

[0018] Furthermore, it is preferable that any of the above also have a light-emitting element. The optical element preferably has the function of emitting a second color of light. Furthermore, the light-emitting and receiving elements and the emission It is preferable that the optical element be provided on the same plane.

[0019] Furthermore, in the above, the light-receiving element comprises a first pixel electrode, a first light-emitting layer, an active layer, and a first The light-emitting element has electrodes, and preferably has a second pixel electrode, a second light-emitting layer, and a first electrode. Furthermore, the first pixel electrode and the second pixel electrode are formed by processing the same conductive film. It is preferable that this be done.

[0020] Another aspect of the present invention includes any of the above-mentioned display devices and a connector or integrated circuit. It is a display module having the following features.

[0021] Another aspect of the present invention includes the above-mentioned display module, an antenna, a battery, a housing, and a At least one of the following: camera, speaker, microphone, touch sensor, and operation button, It is an electronic device. [Effects of the Invention]

[0022] According to one aspect of the present invention, a display device having an imaging function can be provided. Or, a high-definition display device An imaging device or display device having a display unit or an imaging unit can be provided. Alternatively, a high-definition image can be provided. We can provide an imaging device or display device capable of capturing images. Or, a high-sensitivity imaging device. We can provide an imaging device or display device capable of creating images, or a biological image such as a fingerprint. A display device that can acquire information can be provided. Alternatively, a display device that functions as a touch panel can be provided. We can provide this.

[0023] Furthermore, according to one aspect of the present invention, the number of components in an electronic device can be reduced. Or, a novel structure can be constructed. We can provide a display device, imaging device, or electronic device having the above characteristics. Or, we can address the issues of prior art. This can mitigate at least one of the issues.

[0024] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not necessarily have to possess all of these effects. Furthermore, other effects may be considered. This information can be extracted from descriptions such as specifications, drawings, and claims. [Brief explanation of the drawing]

[0025] [Figure 1] Figure 1 is a circuit diagram showing an example of a pixel. [Figure 2] Figures 2A and 2B illustrate examples of how a pixel circuit operates. [Figure 3] Figures 3A to 3C illustrate examples of how the pixel circuit operates. [Figure 4] Figures 4A to 4C are circuit diagrams showing an example of a pixel circuit. [Figure 5] Figure 5 shows an example of a display device. [Figure 6] Figure 6 is a circuit diagram showing an example of a pixel. [Figure 7] Figure 7A is a circuit diagram showing an example of a pixel, and Figure 7B is a circuit diagram of a transistor. [Figure 8] Figures 8A and 8B are circuit diagrams showing an example of a pixel. [Figure 9] Figures 9A and 9B are circuit diagrams showing an example of a pixel. [Figure 10] Figures 10A and 10B show examples of display devices. [Figure 11] Figure 11 is a circuit diagram showing an example of a pixel. [Figure 12] Figure 12 illustrates an example of how a display device operates. [Figure 13] Figure 13 illustrates an example of how a display device operates. [Figure 14] Figures 14A and 14B are circuit diagrams showing an example of a pixel. [Figure 15] Figure 15 is a circuit diagram showing an example of a pixel. [Figure 16] Figure 16 is a circuit diagram showing an example of a pixel. [Figure 17] Figure 17 illustrates an example of how a display device operates. [Figure 18] Figures 18A to 18D are cross-sectional views showing an example of a display device. Figures 18E to 18G are top views showing an example of a pixel. [Figure 19] Figures 19A to 19D are top views showing an example of a pixel. [Figure 20] Figures 20A to 20E are cross-sectional views showing examples of light-emitting and receiving elements. [Figure 21] Figures 21A and 21B are cross-sectional views showing an example of a display device. [Figure 22] Figures 22A and 22B are cross-sectional views showing an example of a display device. [Figure 23] Figures 23A and 23B are cross-sectional views showing an example of a display device. [Figure 24] Figures 24A and 24B are cross-sectional views showing an example of a display device. [Figure 25] Figures 25A and 25B are cross-sectional views showing an example of a display device. [Figure 26] Figure 26 is a perspective view showing an example of a display device. [Figure 27] Figure 27 is a cross-sectional view showing an example of a display device. [Figure 28] Figure 28 is a cross-sectional view showing an example of a display device. [Figure 29] Figure 29A is a cross-sectional view showing an example of a display device. Figure 29B is a cross-sectional view showing an example of a transistor. [Figure 30] Figures 30A and 30B show examples of electronic devices. [Figure 31] Figures 31A to 31D show examples of electronic devices. [Figure 32] Figures 32A to 32F show examples of electronic devices. [Modes for carrying out the invention]

[0026] The embodiments will be described below with reference to the drawings. However, many embodiments are described. It can be implemented in different ways, without deviating from its purpose and scope. Those skilled in the art will readily understand that the form and details can be modified in various ways. Therefore, the present invention This shall not be interpreted as being limited to the contents described in the following embodiments.

[0027] In the configuration of the invention described below, the same part or part having a similar function is The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0028] In each figure described herein, the size, layer thickness, or area of ​​each component is not specified. This may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. I can't.

[0029] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0030] A transistor is a type of semiconductor device that amplifies current or voltage, conducts or does not conduct. This enables the realization of controlled switching operations, etc. (Transistors in this specification) is an IGFET (Insulated Gate Field Effect Tran) sistor), thin-film transistor (TFT) Includes r).

[0031] Furthermore, the "source" and "drain" functions are used when transistors with different polarities are employed. Or, they may be reversed when the direction of current changes during circuit operation. Therefore, in this specification, the terms "source" and "drain" are interchangeable. It is assumed that this is possible.

[0032] Furthermore, in this specification, etc., "electrically connected" means "having some kind of electrical effect." This includes cases where the connection is made via ". Here, "has some electrical effect The term "of" is not particularly limited as long as it enables the exchange of electrical signals between connected objects. For example, "things that have some kind of electrical effect" include electrodes, wiring, and transistors. Switching elements such as switches, resistive elements, coils, capacitive elements, and other elements with various functions This includes children, etc.

[0033] In this specification, a node refers to a component that enables the electrical connection of elements constituting a circuit. It refers to an element (for example, wiring). Therefore, "a node to which A is connected" means This refers to wiring that is electrically connected to A and can be considered to be at the same potential as A. Elements that enable electrical connections inside (e.g., switches, transistors, capacitive elements, inverters) Even if one or more (ductors, resistors, diodes, etc.) are present, they can be considered to be at the same potential as A. Therefore, assume that the wiring is connected to node A.

[0034] In this specification, the EL layer is provided between a pair of electrodes of the light-emitting element, and at least This refers to a layer containing a light-emitting substance (also called a light-emitting layer), or a laminate containing a light-emitting layer. .

[0035] In this specification, a display panel, which is one form of a display device, displays an image or the like on its display surface. It has the function of (powering). Therefore, the display panel is one form of an output device.

[0036] Furthermore, in this specification, the substrate of the display panel may be, for example, FPC (Flexible Printed Circuit). (inted Circuit) or TCP (Tape Carrier Packa A connector such as a ge is attached, or the circuit board has a COG (Chip On A display panel module or display module is a device on which an IC is mounted using a glass or similar method. It may be called a display panel, or simply a display board.

[0037] In this specification, a touch panel, which is one form of a display device, displays images, etc. on its display surface. The display function detects when a finger, stylus, or other object touches, presses, or comes near the display surface. It has the function of a touch sensor that detects things like touching. Therefore, touch panel This is one form of an input / output device.

[0038] A touch panel is, for example, a display panel (or display device) with a touch sensor. It can also be called a display panel (or display device) with a touch function. It can also be configured to have a panel and a touch sensor panel. Alternatively, the display panel The configuration can also include a touch sensor functioning either internally or on its surface.

[0039] Furthermore, in this specification, etc., the touch panel circuit board is considered to have connectors, ICs, etc. mounted on it. This is sometimes called a touch panel module, display module, or simply a touch panel. There is a match.

[0040] (Embodiment 1) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention, and an example of a driving method. do.

[0041] One aspect of the present invention is a display device having a plurality of pixels arranged in a matrix. Each element has one or more subpixels. Each subpixel has one or more light-emitting / receiving elements.

[0042] A light-emitting element (light-receiving device) emits light of a first color. It functions as a photoelectric element (also known as a photoelectric device) that receives light of a second color. It is an element that also functions as a light-emitting / receiving element. (operational element), multifunction diode (Multifunctio Light Emitting Photodiode) (todiode), or bidirectional photodiode (Bidirectional Ph It can also be called otodiode, etc.

[0043] By arranging multiple subpixels, each having an image-receiving or light-emitting element, in a matrix, the display device can display images. It can have both the function of displaying and the function of capturing images. Therefore, the display device is It can also be called a composite device or a multi-functional device.

[0044] [Configuration Example 1] [Configuration Example 1-1] Figure 1 shows a part of a pixel circuit that can be applied to a sub-pixel having an light-emitting / light-receiving element. The pixel circuit consists of switch SW1, switch SW2, switch SW3, and transistor T. It has r1, transistor Tr2, and light-receiving element SA. The pixel circuit also maintains charge It is preferable to have capacities CS1 and CS2 for holding. The pixel circuit includes wiring SL, wiring VL1, wiring AL, wiring CL, wiring VCP, wiring VPI, And wiring WX is connected.

[0045] Switches SW1, SW2, and SW3 each have two terminals (electrodes). It is an element that has a function and can control the conductivity and non-conductivity between the terminals.

[0046] Switch SW1 has one terminal electrically connected to wiring SL, and the other terminal is a transistor The gate of transistor Tr1 and one electrode of capacitor CS1 are electrically connected. Tr1 has one of its sources and drains electrically connected to wiring AL, and the other is a switch. One terminal of SW2, one electrode of the light-emitting element SA, and the other electrode of the capacitor CS1 are connected to the electric element. They are electrically connected. Switch SW2 has the other terminal connected to the gate of transistor Tr2. It is electrically connected to one terminal of switch SW3 and one electrode of capacitor CS2. Switch SW3 has its other terminal electrically connected to wiring VL1. Capacitor CS2 is, The other electrode is electrically connected to the wiring VCP. Transistor Tr2 has a source and One end of the drain is electrically connected to wiring WX, and the other end is electrically connected to wiring VPI. The light-emitting element SA has its other electrode electrically connected to the wiring CL.

[0047] It is preferable to apply a constant potential to the VCP and VPI wiring. Potentials such as VDD, VSS, ground potential, reference potential, or common potential can be used. Cut.

[0048] In Figure 1, the anode of the light-emitting element SA is located on the transistor Tr1 side. In this case, the potential supplied to wiring CL is lower than the potential supplied to wiring AL. This can be done if the cathode of the light-emitting element SA is located on the transistor Tr1 side. This configuration is also possible, in which case the wiring CL is given a higher potential than the wiring AL. It can be done this way.

[0049] Furthermore, Figure 1 and other figures show an example where an n-channel transistor is used as the transistor. However, p-channel transistors can also be applied to some or all of the components. The various potentials and signals should be appropriately changed according to the type of transistor.

[0050] Transistor Tr1 has the function of controlling the current flowing to the light-emitting element SA. Transistor Tr1 functions as a drive transistor. Transistor Tr1 is Depending on the potential (data potential) supplied from the wiring SL via switch SW1, the light-receiving element The current flowing through the sub-SA can be controlled. The light-emitting element SA will have a brightness corresponding to that current. It can emit light.

[0051] Transistor Tr2 receives the electricity transferred from the light-emitting element SA to the node to which its gate is connected. The conduction state changes depending on the load (potential). Transistor Tr2 is a readout transistor. It functions as a station. Also, wiring WX functions as a readout wiring.

[0052] Wiring VL1 is supplied with at least two different potentials. One is potential V0, and the traction When writing a data potential to the gate of transistor Tr1, the source of transistor Tr1 is supplied. This is the potential. The other is potential V RS The anode of the light-emitting element SA is connected. This is the potential used to reset (initialize) the node's potential. In this way, there are two types of potentials. By supplying power through a single wire VL1, the number of wires can be reduced, simplifying the circuit configuration. It can be simplified. This makes it possible to reduce the area occupied by pixels, resulting in higher resolution. A display device can be realized. Therefore, it is not only possible to display images with high display quality, but also Furthermore, it can capture high-resolution images.

[0053] The operation method of the pixel circuit exemplified in Figure 1 will be explained below.

[0054] First, using Figures 2A and 2B, we will explain the operation when the light-emitting / receiving element SA is used as a light-emitting element. Let me explain one example of the method.

[0055] Figure 2A shows the data potential V at the gate of transistor Tr1. data The period for writing (data This schematically shows the operation during the data writing period. Set SW1, SW2, and SW3 to a conductive state.

[0056] During the data writing period, as indicated by one of the dashed arrows, the gate of transistor Tr1 The wired connection from SL to the data potential V is via switch SW1. data It is given. As indicated by the other dashed arrow, the other end of the source and drain of transistor Tr1 is: The potential V0 is supplied from wiring VL1 via switches SW2 and SW3. At this time, the capacitance CS1 has a data potential V data The potential difference with potential V0 is charged.

[0057] Figure 2B shows that the gate potential of transistor Tr1 is maintained and current flows through transistor Tr1. This diagram schematically shows the operation of the light-emitting element SA in response to the current, specifically the period during which it emits light (holding period, light emission period). During the holding and illumination period, switches SW1, SW2, and SW3 are activated. All connections are made non-conductive. As a result, almost all of the current flowing through transistor Tr1 is transmitted. The current flows through the optical element SA. In Figure 2B, the current path is shown by a dashed arrow.

[0058] Next, using Figures 3A to 3C, we will show the movement when the light-emitting element SA is used as a light-receiving element. An example of the method will be explained.

[0059] Figure 3A shows the period during which the potential of the anode of the light-emitting element SA is initialized (reset period). This diagram schematically shows the operation. During the reset period, switch SW1 and switch SW2 Set all of switch SW3 to a conductive state.

[0060] During the reset period, as indicated by one of the dashed arrows, the anode of the light-emitting element SA is , potential V is supplied from wiring VL1 via switch SW3 and switch SW2. RS is supplied. Potential V RS shall be a potential lower than at least the potential applied to wiring CL. Potential V RS is preferably a potential lower than potential V0.

[0061] In the case of a configuration where the cathode of the light-emitting and receiving element SA is connected to the transistor Tr1 side, the potential V shall be a potential higher than the potential applied to wiring CL (the potential applied to the anode of the light-emitting and receiving element SA). Also, potential V RS can be a potential higher than potential V0. Moreover, during the reset period, potential V is applied to the gate of transistor Tr1 from wiring SL via switch SW1. RS Potential V is a potential that renders transistor Tr1 non-conductive. Thereby, it is possible to prevent the potential of the anode of the light-emitting and receiving element SA from changing unintentionally due to the current flowing from wiring AL to the light-emitting and receiving element SA via transistor Tr1 in subsequent periods. For example, potential V

[0062] off Potential V off

[0063] off Potential V RS can be a potential lower than the potential obtained by adding the threshold voltage of transistor Tr1 to potential V . In particular, potential V off RS Potential V RS is preferably a potential lower than potential V

[0063] Figure 3B schematically shows the operation during the period (exposure period) when the light-emitting and receiving element SA receives light and charges are accumulated in the light-emitting and receiving element. During the exposure period, charges are present at both ends of the light-emitting and receiving element SA. As the charge accumulates, the potential difference Vc between the anode and cathode of the light-emitting element SA changes.

[0064] During the exposure period, all switches SW1, SW2, and SW3 are de-conducted. This is the state. Also, at this time, the gate of transistor Tr1 is supplied with a reset period. The potential V off Because this is maintained, as shown in the figure, current flows through transistor Tr1. The current is not flowing. Therefore, the charge that accumulates on the anode side of the light-emitting element SA However, this prevents leakage to the transistors Tr1 and Tr2. As a result, highly accurate imaging can be performed.

[0065] Figure 3C shows that the charge accumulated in the light-emitting element SA is transferred to the gate of transistor Tr2. This schematically shows the operation during the period (transfer period) when data is transferred to the next node. In this configuration, switch SW2 is set to a conductive state, and switches SW1 and SW3 are set to a non-conductive state. This is the state. As a result, as shown by the dashed arrow, the charge accumulated in the light-emitting element SA is The gate of transistor Tr2 is transmitted via switch SW2 to the node to which it is connected. After the cargo transfer is complete, the switch SW2 is de-conducted, and the transistor Tr The gate potential of transistor 2 is maintained. At this time, the voltage corresponding to the gate potential of transistor Tr2 is maintained. Flow I S However, the wiring flows from VPI to WX.

[0066] Thus, the data writing period for display and the reset period for imaging are distributed By switching the potential applied to line VL1, the number of wires can be reduced, simplifying the pixel circuit. This makes it possible to increase the resolution and detail of display devices. Reducing the number of elements also reduces the power consumption of the display device.

[0067] [Configuration Example 1-2] Figure 4A shows an example of a pixel circuit configuration different from that in Figure 1. In Figure 4A, a switch The main difference from the above is that it has SW4.

[0068] Switch SW4 is provided between the light-emitting element SA and the transistor Tr1, and these It is possible to control continuity and non-continuity. Also, in Figure 4A, one terminal of switch SW4 (Electrodes) are the source and drain of transistor Tr1, and one side of switch SW2. The terminal is electrically connected to the other electrode of the capacitor CS1.

[0069] By setting switch SW4 to a non-conductive state, the light-emitting element SA and transistor Tr1 are connected. It can be electrically insulated. Therefore, regardless of the gate potential of transistor Tr1, The current flowing to the light-emitting element SA can be interrupted via transistor Tr1. Therefore, during the reset period exemplified above, a potential is generated at the gate of transistor Tr1. V off Since it is not necessary to provide a power source, the driving method can be simplified.

[0070] Furthermore, switch SW4 may be installed in the position shown in Figure 4B. Specifically, switch S One terminal of W2 is electrically connected between the light-emitting element SA and the switch SW4. .

[0071] During the exposure period and the transfer period, data is transmitted to the gate of transistor Tr1. It is also possible to maintain a state where the potential is held. This allows that after the transfer period ends, Switch SW4 from a non-conductive state to a conductive state, and switch SW2 from a conductive state to a non-conductive state. By switching to a conductive state, the light-emitting and receiving elements can be instantly activated without writing any new data. SA can be made to emit light. This allows the image to be displayed after the transfer period is complete. Therefore, since no data writing period is required in between, the period during which the image is not displayed (hidden period) is shortened. This can be done to prevent damage to the display quality.

[0072] Furthermore, Figure 4C shows an example where switch SW2 is omitted from the configuration in Figure 4A. By having switch SW4 perform the function of switch SW2, the pixel circuit is simplified. It is possible.

[0073] [Configuration Example 2] [Example of display device configuration 2-1] The following describes a more specific configuration example of a display device according to one aspect of the present invention.

[0074] Figure 5 shows a block diagram illustrating the configuration of the display device 10. The display device 10 is a table It includes an indicator unit 11, a drive circuit unit 12, a drive circuit unit 13, a drive circuit unit 14, and a circuit unit 15, etc. ru.

[0075] The display unit 11 has a plurality of pixels 30 arranged in a matrix. The pixels 30 are sub-pixels It has a primary pixel 20R, a sub-pixel 20G, and a sub-pixel 20B. The sub-pixel 20R has an element-receiving element. Sub-pixels 20G and 20B each have an element-emitting element.

[0076] Sub-pixel 20R is powered by wiring SL1, wiring GL, wiring RS, wiring SE, and wiring WX, etc. They are electrically connected. Sub-pixel 20G is electrically connected to wiring SL2 and wiring GL, etc. The sub-pixel 20B is electrically connected to wiring SL3 and wiring GL, etc.

[0077] Wiring SL1, Wiring SL2, and Wiring SL3 are each electrically connected to the drive circuit section 12. The wiring GL is electrically connected to the drive circuit section 13. The drive circuit section 12 is It functions as a source line drive circuit (also called a source driver), with wiring SL1 and wiring SL2 The drive circuit supplies data signals (data potentials) to each sub-pixel via wiring SL3. Section 13 functions as a gate line drive circuit (also called a gate driver) and is selected for wiring GL. To supply a signal.

[0078] Wiring RS and Wiring SE are electrically connected to the drive circuit section 14, respectively. Wiring W X is electrically connected to the circuit unit 15. The drive circuit unit 14 supplies to the sub-pixel 20R. It has the function of generating a signal for and outputting it to wiring SE and wiring RS, etc. Also, the drive circuit Unit 14 has the function of generating and outputting signals to be supplied to the wiring REN and wiring TX, which will be described later. It has. In addition, the drive circuit unit 13 or the drive circuit unit 12 is one of the wiring REN and wiring TX It may have a function to generate a signal to supply to one or both. The circuit section 15 is a sub-pixel The system receives the signal output from 20R via wiring WX and outputs it externally as imaging data. It has a function. Circuit section 15 functions as a readout circuit.

[0079] [Pixel configuration example 2-1] Figure 6 shows an example of the circuit diagram of pixel 30. Pixel 30 consists of sub-pixel 20R, sub-pixel 20G, and sub-pixel 20B. Sub-pixel 20R has circuit 21R, circuit 22, and light-emitting element S It has R and transistor M10. Sub-pixel 20G has circuit 21G and light-emitting element ELG It has. The sub-pixel 20B has a circuit 21B and an ELB light-emitting element.

[0080] Circuit 21R includes transistor M1, transistor M2, capacitor C1, etc. Circuit 22 These are transistors M11, M12, M13, and M1 4. It has a capacity C2, etc.

[0081] Circuit 21R is used when the light-emitting element SR is used as a light-emitting element, and the light-emitting element SR emits light. It functions as a circuit to control the data provided from wiring SL1. Circuit 21R receives data from wiring SL1. It has a function to control the current flowing through the light-emitting element SR according to the potential.

[0082] Furthermore, when the light-receiving element SR is used as a light-receiving element, the circuit 22 It functions as a sensor circuit for controlling the operation. Circuit 22 is reverse-bit the light-emitting element SR. Functions to apply as voltage, function to control the exposure period of the light-receiving element SR, and from the light-receiving element SR Function to maintain potential based on transferred charge, and to transmit a signal based on said potential to wiring WX. It has functions such as outputting.

[0083] The sub-pixel 20R shown in Figure 6 corresponds to the configuration illustrated in Figure 4B. Transistor M2 is In Figure 4B, transistor M13 corresponds to transistor Tr Corresponds to 2. Similarly, transistor M1 is connected to switch SW1, and transistor M11 is connected to Transistor M12 is connected to switch SW2, transistor M10 is connected to switch SW3, and switch Each corresponds to SW4.

[0084] Transistor M1 has its gate electrically connected to wiring GL, and its source and drain are connected. One end is electrically connected to wiring SL1, and the other end is connected to the gate of transistor M2 and capacitor C1. It is electrically connected to one electrode. Transistor M2 has one of its sources and drains. The wiring AL is electrically connected, and the other end is one of the source and drain of transistor M10. And it is electrically connected to the other electrode of capacitance C1. Transistor M10 has a gate that is wired Electrically connected to REN, the source and the other drain are connected to one electrode of the light-emitting element SR. The other electrode of the light-emitting element SR is electrically connected to the wiring CL. .

[0085] The data potential is supplied to wiring SL1. The anode potential is supplied to wiring AL. A cathode potential is applied to the wiring CL. In the configuration shown in Figure 6, the anode potential is The potential should be higher than the cathode potential. Wiring REN should be conductive and non-conductive for transistor M10. A control signal is provided.

[0086] Transistor M11 has its gate electrically connected to wiring TX, and its source and drain are One side is one electrode of the light-emitting element SR, and the other is the source and drain of transistor M10. One side is electrically connected to the gate of transistor M13, and the other side to the saw of transistor M12. It is electrically connected to one of the electrodes of the transistor and drain, and to one of the electrodes of the capacitor C2. In M12, the gate is electrically connected to wiring RS, and the other side of the source and drain is connected to wiring VL. It is electrically connected to 1. Capacitor C2 has its other electrode electrically connected to the wiring VCP. Transistor M13 has one of its sources and drains electrically connected to wiring VPI, and the other... This is electrically connected to either the source or drain of transistor M14. The M14 has its gate electrically connected to wiring SE, and the other side of the source and drain is connected to wiring W It is electrically connected to X.

[0087] Wiring TX is supplied with a signal that controls the conduction and non-conductivity of transistor M11. VL1 has potentials V0 and V RS The voltage is applied at different times. The VCP wiring has a constant potential. A constant potential is given to the wiring VPI. In the configuration shown in Figure 6, wiring VL1 The potential V applied to it RS This is a potential lower than the cathode potential applied to the wiring CL. This is preferable.

[0088] Transistor M14 functions as a selection transistor for readout. The M14 transistor's conduction and non-conductivity are controlled by the signal given to the wiring SE. By making transistor M14 conductive, transistor M13 and wiring WX become conductive, The current (or voltage) corresponding to the gate potential of the Zistor M13 can be output to the wiring WX. ru.

[0089] Here, transistors M1 and M10 function as switches. Transistors M11, M12, and M14 have a non-conductive state. It is preferable to use a transistor with extremely low current. In particular, when a channel is formed A transistor using an oxide semiconductor in the semiconductor layer can be suitably used. Transistors M2 and M13 also utilize oxide semiconductor transistors. This is preferable because it allows all transistors to be formed through a common manufacturing process. In transistors M2 and M13, the semiconductor layer in which the channel is formed contains silicon (including amorphous silicon, polycrystalline silicon, and monocrystalline silicon) may be used. Furthermore, this is not limited to the case where silicon is applied to some or all transistors. Distors can also be used. Furthermore, some or all transistors may use materials other than silicon. Transistors using inorganic semiconductors, compound semiconductors, or organic semiconductors may also be used. .

[0090] Sub-pixel 20G has circuit 21G and light-emitting element ELG. Sub-pixel 20B has circuit 2 It has 1B and a light-emitting ELB. Circuits 21G and 21B have similar configurations.

[0091] Circuits 21G and 21B consist of transistors M1, M2, and M 3. It has capacitance C1. Circuits 21G and 21B have transistor M3, except This is the same as circuit 21R described above. Transistor M3 has its gate electrically connected to wiring GL. And, one of the source and drain electrodes is the other electrode of capacitance C1, and the source electrode is the source electrode of transistor M2. and the other side of the drain, and electrically connected to the anode of the light-emitting element ELG or light-emitting element ELB. The other end is connected to wiring V0L and is electrically connected to it.

[0092] A constant potential is supplied to wiring V0L. For example, wiring V0L is supplied with the same potential as wiring VL1. The same potential as the potential V0 may be applied. Also, instead of wiring V0L, wiring VL1 may be used. You may use it.

[0093] Here, as shown in Figure 7A, each transistor has a back gate. A configuration in which this is applied may also be used. Figure 7A shows a configuration in which a pair of gates are electrically connected. They are doing it.

[0094] Note that in Figure 7A, all transistors are configured such that a pair of gates are electrically connected. However, this is not limited to this. Pixel 30 has a transistor connecting one gate to the other wiring. It may have a gate. For example, one of a pair of gates is given a constant potential. By connecting to the wiring, the stability of the electrical characteristics can be improved. Also, a pair of gates One of the gates is given a potential that controls the threshold voltage of the transistor. It may also be connected to the wiring. Also, as shown in Figure 7B, one of the pair of gates A transistor may be used in which one of the source and drain is connected to the other. In this case, one It is preferable to connect the gate to the source. For example, the transistor in pixel 30 Transistors M2, M12, and M13 should be replaced with the transistors shown in Figure 7B. It can be used appropriately.

[0095] Furthermore, while this example shows all transistors having back gates, it is not limited to this. Furthermore, transistors with and without back gates are mixed. You may allow it.

[0096] [Pixel configuration example 2-2] Figure 8A omits the transistor M10 in the sub-pixel 20R as illustrated in Figure 6 above. An example of a case is shown. The configuration shown in Figure 8A corresponds to the configuration illustrated in Figure 1.

[0097] Furthermore, Figure 8B shows a transistor with a back gate for each transistor in Figure 8A. This is an example of its application. Here, all transistors have a pair of gates connected to them. A transistor is applied. Note that, as mentioned above, this is not the only method for connecting the back gate. It is not possible. Also, as mentioned above, transistors without a back gate and back gate Transistors having this feature may be mixed in.

[0098] [Pixel configuration example 2-3] Figure 9A shows an example where the wiring WX is omitted in the sub-pixel 20R exemplified in Figure 6 above. This indicates that.

[0099] In Figure 9A, transistor M14 has its source and the other drain connected to wiring SL1. They are connected by energy.

[0100] Wiring SL1 can also serve as wiring WX. Specifically, it leads to transistor M14. By setting it to a pass-through state, a current corresponding to the gate potential of transistor M13 is supplied to wiring SL1 (and It can output voltage. At this time, wiring SL1 is connected to the drive circuit section 12 and the circuit section 15 It can be configured to connect to both.

[0101] Figure 9B also shows an example where transistor M10 in Figure 9A is omitted. .

[0102] [Example of display device configuration 2-2] The above example showed one pixel having three subpixels, but below, one pixel Let's describe an example with two subpixels.

[0103] Figure 10A shows an example of an arrangement method for 3x3 pixels. In Figure 10A, From row i, column j (where i and j are independent integers greater than or equal to 1) to row i+2, column j+2 It is showing its true nature.

[0104] In Figure 10A, pixels 30G and 30B are arranged alternately in the row and column directions. Pixel 30G has sub-pixels 20R and sub-pixel 20G. Pixel 30B has sub-pixel 20R It also has sub-pixels 20B.

[0105] For example, pixel 30G located at row i, column j has wiring GL[i] extending in the row direction, Line RS[i] and wiring SE[i], and wiring SL1[j] and wiring SL2 extending in the column direction [j] and wiring WX[j] are connected.

[0106] Figure 10B shows an example of the arrangement method for the light-emitting element SR, light-emitting element ELG, and light-emitting element ELB. It is shown that the light-emitting and light-emitting elements (SR) are arranged at equal intervals in the row and column directions. The element ELG and the light-emitting element ELB are arranged alternately in the row and column directions, respectively. Furthermore, the shapes of the light-emitting element SR, light-emitting element ELG, and light-emitting element ELB are square. The shape is tilted at approximately 45 degrees with respect to the direction of arrangement. This increases the distance between adjacent elements. This allows for efficient production of light-emitting and light-receiving elements with high yield when differentiating between them. It is possible.

[0107] Figure 11 shows the circuit for pixel 30G in row i and column j, and pixel 30B in row i+1 and column j. An example diagram is shown. Regarding the configuration of sub-pixels 20R, 20G, and 20B: Figure 6 above can be used as a reference.

[0108] [Example of driving method 1] The following describes an example of a method for driving the display device. Here, we refer to Figure 10 and Figure We will explain using the example of the configuration shown in 11, where one pixel has two subpixels.

[0109] In the following, the display unit will have multiple pixels arranged in M ​​rows and N columns (where M and N are respectively) The display device has a configuration in which two or more integers are arranged in a matrix.

[0110] Figures 12 and 13 schematically show the operation of the display device. The operation of the display device is broad Divided into two parts: the period during which an image is displayed using the light-emitting and light-receiving elements (display period), and the period during which the light-emitting and light-receiving elements are used. It can be divided into two parts: the period during which imaging is performed using the child (also called a sensor) (imaging period), and the display period. This is the period during which image data is written to a pixel and a display based on that image data is performed. The imaging period is the time during which imaging is performed using the light-emitting / receiving sensor and the imaging data is read out.

[0111] First, we will explain the operation during the display period using Figure 12.

[0112] During the display period, data is repeatedly written to the pixels. During that period, The operation of "S" will not be performed (indicated as blank). Note that imaging operations will not be performed during the display period. It can also be done this way.

[0113] A single write operation writes one frame of image data. (See Figure 12) In this way, with a single write operation (referred to as writing), data is transferred to the pixels from column 1 to column M. The entries for "Ta" will be posted sequentially.

[0114] Figure 12 shows the timing chart for writing data to row i and row i+1. This shows wiring GL[i], wiring GL[i+1], wiring RS[i], and wiring Line RS[i + 1], wiring SE, wiring REN, wiring VL1, wiring SL1[j], and wiring S shows the potential transition in L2[j]. Here, for the wiring SE, the wirings from the first row to the M-th row are collectively denoted as wiring SE[1:M]. Regarding the connection relationship between each wiring and each pixel, FIGS. 10 and 11 can be referred to. In the writing period of the i-th row, the wiring GL[i] and the wiring RS[i] are set to a high-level potential, and the other wirings GL and RS are set to a low-level potential. Also, image data D [i, j] is given to the wiring SL1[j], and image data D

[0115] [i, j] is given to the wiring SL2[j] respectively. Also, during the writing period, a high-level potential is given to the wiring REN, and a potential V0 is given to the wiring VL1. R [i,j] G [i,j] G are respectively given. For the writing after the (i + 1)-th row and later, in the same manner as above, the corresponding wirings GL and RS are set to a high-level potential, and image data is given to the wirings SL1 and SL2 respectively, so that writing can be performed row by row.

[0116]

[0117] By performing such a writing operation from the first row to the M-th row, the data writing of one frame is completed. During the display period, by repeatedly executing the above operation, a moving image can be displayed.

[0117]

[0118] Subsequently, the operation during the imaging period will be described using FIG. 13. Here, the case of performing the imaging operation in the global shutter method will be described. Note that the driving method of the rolling shutter method can also be applied, not limited to the global shutter method.

[0119] ​​The imaging period is the period during which images are captured simultaneously for each pixel (referred to as imaging; hereafter referred to as imaging period). To distinguish them, there is the period during which the imaging operation is performed (also called the imaging operation period) and the period during which the imaging data is read out sequentially (referred to as readout). The imaging operation period is divided into the initialization period, the exposure period, and the transfer period. Furthermore, during the readout period, the image data is read out line by line, from line 1 to line M. It can be done.

[0120] Figure 13 shows the timing charts for the imaging operation period and the readout period. Here, wiring TX, wiring SE[i], wiring RS[i], wiring SE[i+1], wiring R S[i+1], wiring VL1, wiring REN, wiring SL[1:N], wiring GL[1:M], and The potential transition for the wiring WX[1:N] is shown here. Here, the wiring GL is summarized. Wiring GL[1:M] and wiring WX are collectively referred to as wiring WX[1:N]. Lines SL1 and wiring SL2, etc., are collectively referred to as wiring SL[1:N].

[0121] During the initialization period, the wiring REN is set to a low level potential. This allows all pixels to In this state, transistor M10 becomes non-conductive. As a result, the light-emitting element SR and the transistor The device can be electrically isolated from the Zistor M2.

[0122] Set wiring TX and all wiring RS to a high level potential, and set wiring VL1 to a potential V RS Give This results in the node to which the gate of transistor M13 is connected and the anode of the light-emitting / light-receiving element SR. The potential V is generated from the wiring VL1 via transistors M11 and M12. RS is given This is achieved. As a result, all pixels are reset.

[0123] Next, during the exposure period, wiring TX and wiring RS are set to a low level potential. As a result, an electric charge corresponding to the irradiated light is accumulated in the light-receiving element SR.

[0124] Next, during the transfer period, the wiring TX is set to a high level potential. This causes the light-receiving element The charge accumulated in the child SR is transferred to the node to which the gate of transistor M13 is connected. This can be done. Subsequently, by setting the wiring TX to a low potential, the potential of that node can be maintained. It will be in a held state.

[0125] Next, the imaging data is read out row by row. During the readout period, the wiring SE[1 From ] to wiring SE[N], a high-level potential is applied sequentially, so that all pixels Then, the data can be read. For example, when reading the i-th row, the wiring SE[i] By creating a high-level potential, the i-th row of data D is connected to the wiring WX[1:N]. W [i] is output Specifically, one wire WX[j] contains the data D in the i-th row and j-th column. W [i,j] is output. It can be done.

[0126] In Figure 13, during the data reading operation for row i, a high-level electric current is supplied to wiring SE[i]. Given a position, data D is connected to wiring WX[1:N]. W After [i] is output, the wiring RS[ A high-level potential is applied to [i]. This causes a ri Set potential, which is potential V RS The data given is output to wiring WX[1:N]. The circuit section 15 to which wiring WX is connected uses these two output data to perform correlated dual scanning. Perform Correlated Double Sampling (CDS). It is possible to reduce the influence of variations in the electrical characteristics for each pixel.

[0127] Here, during the imaging period, a low-level potential is constantly applied to the wiring REN. As a result , particularly during the exposure period and the transfer period, the light-emitting and receiving element SR and the transistor M2 are electrically insulated. This reduces noise and enables high-precision imaging to be performed.

[0128] Also, during the imaging period, each pixel preferably retains the image data written immediately before (referred to as retention). As a result, when the imaging period ends and the potential of the wiring REN changes from a low-level potential to a high-level potential, an image corresponding to the immediately retained image data can be displayed. Also, by retaining the image data written to the sub-pixel 20G or sub-pixel 20B during the imaging period, crosstalk noise to the anode of the light-emitting and receiving element SR in the sub-pixel 20R can be reduced.

[0129] The above is the description of Driving Method Example 1.

[0130] [Configuration Example 3] Hereinafter, a configuration example of a display device having a configuration different from the above will be described.

[0131] [Pixel Configuration Example 3-1] The pixel circuit shown in FIG. 14A is a configuration exemplified in FIG. 6 and the like, in which the transistor M11 and the capacitor C2 are omitted.

[0132] In FIG. 14A, the other of the source and drain of the transistor M2 is one of the source and drain of the transistor M 10, one of the source and drain of the transistor M12, and The gate of transistor M13 is electrically connected to the source of transistor M10. The other end of the drain is electrically connected to the anode of the light-receiving element SR.

[0133] With this configuration, the transistor M11 in the configuration shown in Figure 6 above, etc. The function can be combined into transistor M10. Therefore, transistor M11, and Since the TX wiring can be omitted, the pixel configuration can be simplified.

[0134] Furthermore, the configuration illustrated in Figure 14A provides the same function as the configuration shown in Figure 6, etc. The quantity C1 can serve this purpose. That is, the gate of transistor M13 is connected to the no Capacitor C1 can also function as a holding capacitance that maintains the potential of the current. Compared to the configuration shown in Figure 6, the capacitance C2 and the VCP wiring can be omitted. Therefore, the pixel configuration can be further simplified.

[0135] Here, no wiring that provides a constant potential is connected to capacitor C1. Therefore, capacitor C1 When charging or discharging one of a pair of electrodes, a constant potential can be applied to the other electrode. Preferably. Specifically, a constant potential (e.g., potential V) is obtained from the wiring SL1 via transistor M1. off ) to provide a constant potential from the wiring VL1 via transistor M12 (for example Potential V0 or Potential V RS It is preferable to give )

[0136] Figure 14B shows a transistor with a back gate for each transistor in Figure 14A. This is an example of when it is applied. Here, all transistors have a pair of gates connected to them. A transistor is used. Furthermore, as mentioned above, the connection method for the back gate is as follows: It is not limited. Also, as mentioned above, transistors without a back gate and transistors with a back gate Transistors with a 'T' can be mixed together.

[0137] [Pixel configuration example 3-2] Figure 15 shows an example where the wiring WX is omitted from the configuration shown in Figure 14A. Transis The M14 has its source and drain electrically connected to wiring SL1. SL1 can also function as a wiring WX. This further simplifies the pixel configuration. It is possible.

[0138] [Example of display device configuration 3] The pixel circuits illustrated in Figures 14A, 14B, and 15 above are illustrated in Figures 5, 10A, etc. This can be applied to the sub-pixel 20R of the display device.

[0139] Figure 16 shows an example of applying the pixel circuit illustrated in Figure 14A to the display device shown in Figure 10. Here, similar to Figure 11, pixel 30G in row i and column j, and pixel 3 in row i+1 and column j. An example circuit diagram for 0B is shown.

[0140] [Example of driving method 2] The following describes another example of a method for driving a display device. This is illustrated in Figure 16. I will explain using the above configuration as an example.

[0141] In addition, in cases where there is overlap with the above example of driving method 1, we will refer to it and omit the explanation. There is.

[0142] The operation during the display period is the same as the method illustrated in the above example of driving method 1 and Figure 12. The method can be applied.

[0143] The operation during the imaging period will be explained below using Figure 17. Here again, global This section describes the process of performing imaging using the ru-shatter method.

[0144] Figure 17 shows wiring REN, wiring SE[i], wiring RS[i], wiring SE[i+1], wiring Wire RS[i+1], wiring VL1, wiring SL1[1:N], wiring GL[1:M], and wiring The graph for WX shows the change in potential.

[0145] During the initialization period, wiring REN and all wiring RS are set to a high potential. The node to which the gate of transistor M13 is connected and the anode of the light-emitting / light-receiving element SR are connected. The potential V from wiring VL1 is transmitted via transistors M12 and M10. RS gave It is possible.

[0146] Furthermore, all wiring GL[1:M] is set to a high level potential, and all wiring SL1[1:N] At potential V off This gives the gate of transistor M2 to transistor M1 The potential V from wiring SL1 via off Given, transistor M2 is in a non-conducting state. It is possible.

[0147] Next, during the exposure period, the wiring REN, wiring RS, wiring GL, etc. are set to a low level potential. This causes an electric charge to accumulate in the light-emitting element SR, corresponding to the light irradiated onto it.

[0148] Next, during the transfer period, the wiring REN is set to a high-level potential. This results in light and light reception. The charge accumulated in element SR is transferred to the node to which the gate of transistor M13 is connected. It is possible.

[0149] At this time, if the node to which the gate of transistor M2 is connected is floating, after exposure When transistor M10 is in a conducting state, capacitive coupling by capacitor C1 occurs, In some cases, the potential at the node to which the gate of ZISTA M2 is connected may rise. Therefore, As shown in Figure 17, during the transfer period, a high-level potential is applied to the wiring GL[1:M]. Potential V at wiring SL1[1:N] off By providing this, transistor M2 is reliably turned off. It is preferable to leave it in that state.

[0150] Next, the image data is read out row by row. The operation during the readout period is as follows: Similarly, by applying a high-level potential to each line of wiring SE in sequence, all pixels... The data can be read out. Also, during the reading period of one row, the wiring RS is high. By applying a level potential, two types of data are output to the wiring WX, and the circuit section 15 performs CDS You may do so.

[0151] Here, during the exposure and readout periods, all wiring GLs are at a low level potential. Given this, transistor M1 is in a non-conductive state. As a result, transistor M The gate of transistor 2 has a potential V that makes transistor M2 non-conductive. off Given Because it is held in place, the flow of current through transistor M2 can be suppressed. Therefore, noise This allows for imaging with reduced noise. Note that in this case, transistor M1 is non-conductive. Since this is the default state, the potential applied to wiring SL1 is not important (indicated as "don't care").

[0152] The above concludes the explanation of the second example of the driving method.

[0153] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., are at least a part of them. This can be combined with other configuration examples or drawings as appropriate.

[0154] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0155] (Embodiment 2) This embodiment describes a display device according to one aspect of the present invention.

[0156] A display device according to one aspect of the present invention has an light-emitting element and a light-receiving element.

[0157] The light-emitting element consists of an organic EL element, which is the light-emitting element, and an organic photodiode, which is the light-receiving element. It can be fabricated by combining and . For example, in the stacked structure of an organic EL element, organic f By adding an active layer to the photodiode, a light-emitting / receiving device can be fabricated. A light-emitting element fabricated by combining an organic EL element and an organic photodiode is an organic EL By depositing layers that share a common structure with the element in a single process, the number of deposition steps can be reduced. can.

[0158] For example, one of a pair of electrodes (the common electrode) is connected to a layer common to both the light-emitting and receiving element and the light-emitting element. It is possible to do so. Also, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. It is preferable that at least one of the layers be a common layer for both the light-receiving and light-emitting elements. For example, the light-receiving element and the light-emitting element have the same configuration except for the presence or absence of the active layer of the light-receiving element. It is also possible to create a light-emitting element by simply adding the active layer of a light-receiving element to a light-emitting element. It can also be manufactured in this way. In this manner, by having the light-emitting and light-receiving elements and the light-emitting element have a common layer, This reduces the number of film deposition cycles and masks required, thereby reducing the manufacturing process and costs of the display device. It is possible to use existing manufacturing equipment and methods for display devices to create light-emitting and light-receiving devices. A display device having the following characteristics can be manufactured.

[0159] Furthermore, the layer of the light-receiving element is used when the light-receiving element functions as a light-receiving element and when it emits light. The function may differ depending on whether it is functioning as an element or not. In this specification, light-emitting and receiving elements are referred to as such. The components are named based on their function when they function as light-emitting elements. For example, The hole injection layer functions as a hole injection layer when the light-emitting device is functioning as a light-emitting device, and When a light-emitting element functions as a light-receiving element, it functions as a hole transport layer. Similarly, when an electron-emitting element functions as a light-receiving element, it functions as a hole transport layer. The interlayer functions as an electron injection layer when the light-emitting / receiving device functions as a light-emitting device, and receives and emits light. When the element functions as a light-receiving element, it functions as an electron transport layer.

[0160] Thus, the display device of this embodiment has a display unit having an light-emitting / receiving element and a light-emitting element. Specifically, the display unit has light-emitting and light-receiving elements arranged in a matrix. Therefore, the display unit has not only the function of displaying images, but also the function of capturing images and sensing images. It possesses one or both of the above.

[0161] The display unit can be used as an image sensor, touch sensor, etc. By detecting light, images can be captured, and an object (finger, pen, etc.) can be detected approaching or touching. It can detect touch, etc. Furthermore, the display device of this embodiment uses a light-emitting element to sense It can be used as a light source. Therefore, a light receiving unit and light source are provided separately from the display device. This eliminates the need for assembly and reduces the number of components in electronic devices.

[0162] In the display device of this embodiment, when the light emitted by the light-emitting element of the display unit is reflected by the object, Because the light-emitting element can detect its reflected light, imaging and touch (contact or contact) can be performed even in dark places. Near-field detection is possible.

[0163] The display device of this embodiment has a function of displaying an image using a light-emitting element and a light-receiving element. It possesses such properties. In other words, the light-emitting element and the light-receiving element function as display elements.

[0164] As a light-emitting element, OLED (Organic Light Emitting Diode) ode), QLED(Quantum-dot Light Emitting Dio) It is preferable to use an EL element such as de). As for the light-emitting material of the EL element, firefly Light-emitting substances (fluorescent materials), phosphorescent substances (phosphorescent materials), inorganic compounds (quantum dots) Materials, etc.), substances that exhibit thermally activated delayed fluorescence (Thermally A Delayed Fluorescence (TADF) materials, etc. Examples include micro-LEDs (Light Emitting LEDs). LEDs such as diodes can also be used.

[0165] The display device of this embodiment has the function of detecting light using a light-emitting and light-receiving device. The element can detect light with a shorter wavelength than the light it emits.

[0166] When the light-emitting and receiving element is used as an image sensor, the display device of this embodiment uses the light-emitting and receiving element Images can be captured using this. For example, the display device of this embodiment uses a scanner and It can be used in this way.

[0167] For example, an image sensor can be used to acquire data such as fingerprints and palm prints. In other words, a biometric authentication sensor can be incorporated into the display device of this embodiment. By incorporating a biometric authentication sensor into the device, a separate biometric authentication sensor is provided in addition to the display device. Compared to other cases, the number of components in electronic devices can be reduced, making it possible to miniaturize and lighten electronic devices. be.

[0168] Additionally, an image sensor can be used to capture the user's facial expressions, eye movements, or changes in pupil diameter. This data can be obtained. By analyzing this data, information about the user's physical and mental state can be obtained. This information can be obtained. Based on this information, the output content of either the display or the audio, or both, can be changed. By doing so, for example, VR (Virtual Reality) devices, AR (A) devices, etc. Equipment for MR (Mixed Reality), or MR (Mixed Reality) In devices for y), it is possible to ensure that users can use the device safely.

[0169] Furthermore, when the light-emitting element is used as a touch sensor, the display device of this embodiment uses the light-emitting element. The device can be used to detect the approach or contact of an object.

[0170] A light-emitting element is a photoelectric conversion element that detects light incident on it and generates an electric charge. It works. The amount of charge generated is determined based on the amount of incident light.

[0171] The light-emitting element is fabricated by adding an active layer of a photodetector to the above-mentioned light-emitting element configuration. It is possible.

[0172] For example, the active layer of a pn-type or pin-type photodiode can be used as the light-emitting / receiving element. It is possible.

[0173] In particular, the light-emitting element has an active layer of an organic photodiode having a layer containing an organic compound. It is preferable to use them. Organic photodiodes are easy to make thin, light, and large in area. Furthermore, due to its high degree of freedom in shape and design, it can be applied to various display devices.

[0174] Figures 18A to 18D show cross-sectional views of a display device according to one embodiment of the present invention.

[0175] The display device 350A shown in Figure 18A has a light-emitting / receiving element between substrate 351 and substrate 359. It has a layer 353 having light-emitting elements and a layer 357 having light-emitting elements.

[0176] The display device 350B shown in Figure 18B has a light-emitting / receiving element between substrate 351 and substrate 359. It has a layer 353 having a transistor, a layer 355 having a transistor, and a layer 357 having an light-emitting element. do.

[0177] Display devices 350A and 350B emit green light (G) from a layer 357 having a light-emitting element. Light (A) and blue (B) light are emitted, and red (R) light is emitted from layer 353 which has a light-receiving element. The device is configured to emit light. The color of light emitted by layer 353 is not limited to red.

[0178] The light-receiving elements included in the layer 353 having light-receiving elements are the display device 350A or the display device It is possible to detect light incident from outside the 350B. The light-receiving element is, for example, It can detect either or both green (G) and blue (B) light.

[0179] A display device according to one aspect of the present invention has a plurality of pixels arranged in a matrix. A pixel has one or more subpixels. One subpixel is one light-emitting or light-receiving element or one light-emitting element. It has optical elements. For example, a pixel has a configuration with three subpixels (three colors: R, G, and B), This includes three colors such as yellow (Y), cyan (C), and magenta (M), or four subpixels. A configuration having four colors (such as R, G, B, and white (W), or R, G, B, and Y) Applicable. At least one subpixel has an LED. The LED is in all pixels. It may be provided in all pixels, or it may be provided in some pixels. Also, if one pixel is multiple It may have a number of light-emitting and receiving elements.

[0180] Layer 355 having transistors, for example, is electrically connected to light-emitting and light-receiving elements. It has a transistor that is electrically connected to a light-emitting element. The layer 355 may further have wiring, electrodes, terminals, capacitance, resistance, etc.

[0181] A display device according to one aspect of the present invention has a function to detect an object such as a finger that is in contact with the display device. It may have (Figure 18C). Or, it may be close to (but not in contact with) the display device. It may also have a function to detect objects (Figure 18D). For example, Figures 18C and 18D As shown, in the layer 357 having a light-emitting element, the light emitted by the light-emitting element is displayed in the display device 35 When a finger 352 touches or approaches 0B, it reflects light, and the layer 353 having a light-receiving element is affected. The light-receiving element detects the reflected light. As a result, the finger 352 comes into contact with the display device 350B. It can detect contact or proximity.

[0182] [Pixels] Figures 18E to 18G and 19A to 19D show examples of pixels. Note that the arrangement of subpixels The order of the columns is not limited to that shown in the diagram. For example, the positions of subpixel 311B and subpixel 311G can be reversed. That's fine.

[0183] The pixels shown in Figure 18E have a stripe arrangement applied, emit red light, and have a light-receiving function. Sub-pixel 311SR having a sub-pixel 311G that emits green light, and sub-pixel 311G that emits blue light It has sub-pixels 311B. In a display device in which a pixel consists of three sub-pixels R, G, and B By replacing the light-emitting element used in the subpixel of R with a light-receiving element, the pixel can be given a light-receiving function. A display device can be manufactured.

[0184] The pixels shown in Figure 18F have a matrix arrangement applied, emit red light, and have a light-receiving function. Sub-pixel 311SR having a sub-pixel, sub-pixel 311G emitting green light, sub-pixel 311G emitting blue light It has 311B and a sub-pixel 311W that emits white light. The pixels are R, G, B, W Even in a display device consisting of four subpixels, the light-emitting element used for the R subpixel is a light-receiving element. By replacing it with this, a display device can be manufactured in which the pixels have a light-receiving function.

[0185] The pixels shown in Figure 18G have a pentile arrangement applied, and the combinations differ depending on the pixel. It has subpixels that emit two colors of light. The upper left and lower right pixels shown in Figure 18G emit red light. Sub-pixel 311SR exhibits a light-receiving function, and sub-pixel 31 exhibits green light. It has 1G. The lower left and upper right pixels shown in Figure 18G are sub-pixels 31 that emit green light. It has 1G and a sub-pixel 311B that emits blue light. Note that the sub-pixel shown in Figure 18G The shape indicates the upper surface shape of the light-emitting or light-receiving element of the subpixel.

[0186] The pixel shown in Figure 19A is a sub-pixel 311SR that emits red light and has a light-receiving function. It has a sub-pixel 311G that emits green light and a sub-pixel 311B that emits blue light. Pixel 311SR is located in a different column from sub-pixels 311G and 311B. Pixels 311G and sub-pixels 311B are arranged alternately in the same column, with one being located in an odd-numbered row and the other in an odd-numbered row. The subpixels are placed in even-numbered rows. Note that subpixels placed in a different column from subpixels of other colors are red. It is not limited to (R), but may also be green (G) or blue (B).

[0187] Figure 19B shows two pixels, and one image is formed by three subpixels enclosed by dotted lines. The elements are composed. The pixels shown in Figure 19B emit red light and have a light-receiving function. Sub-pixel 311SR, sub-pixel 311G which emits green light, and sub-pixel 3 which emits blue light It has 11B. In the left pixel shown in Figure 19B, sub-pixel 31 is in the same row as sub-pixel 311SR. Pixel 1G is positioned, and sub-pixel 311B is positioned in the same column as sub-pixel 311SR. Figure 19 In the right pixel shown in B, sub-pixel 311G is placed in the same row as sub-pixel 311SR, and sub-pixel Sub-pixel 311B is located in the same column as 311G. In the pixel layout shown in Figure 19B... In both odd and even rows, sub-pixel 311SR, sub-pixel 311G, and sub-pixel The element 311B is repeated, and in each column, odd-numbered rows and even-numbered rows are mutually exclusive. Subpixels of different colors are arranged.

[0188] Figure 19C shows a modified version of the pixel arrangement shown in Figure 18G. The upper left pixel and the right pixel shown in Figure 19C The lower pixel is a sub-pixel 311SR that emits red light and has a light-receiving function, and a green It has a sub-pixel 311G that emits light. The lower left and upper right pixels shown in Figure 19C are red. Sub-pixel 311SR that emits light and has a light-receiving function, and sub-pixel 3 that emits blue light It has 11B.

[0189] In Figure 18G, each pixel is provided with a sub-pixel 311G that emits green light. In 19C, each pixel is provided with a sub-pixel 311SR that emits red light and has a light-receiving function. It is provided with a sub-pixel that has a light-receiving function for each pixel, as shown in Figure 19C. In this configuration, imaging can be performed with higher resolution compared to the configuration shown in Figure 18G. For example, it can improve the accuracy of biometric authentication.

[0190] Furthermore, the top surface shape of the light-emitting element and the light-receiving element is not particularly limited and can be a circle, ellipse, polygon, or angular. It can be a rounded polygon, etc. Regarding the upper surface shape of the light-emitting element of sub-pixel 311G Figure 18G shows an example of a circular shape, and Figure 19C shows an example of a square shape. The top shapes of the light-emitting element and the light-receiving element may be different from each other, and some or all of the colors may be different. It's fine if they're the same.

[0191] Furthermore, the aperture ratios of the subpixels of each color may differ from one another, and the same may apply to some or all of the colors. It may be the same. For example, sub-pixels provided for each pixel (sub-pixel 311G in Figure 18G, In Figure 19C, the aperture ratio of subpixel 311SR) is made smaller compared to the aperture ratios of subpixels of other colors. That's fine.

[0192] Figure 19D shows a modified version of the pixel arrangement shown in Figure 19C. Specifically, the configuration in Figure 19D is This can be obtained by rotating the configuration in Figure 19C by 45°. In Figure 19C, two subpixels Although it was explained that one pixel is formed from each subpixel, as shown in Figure 19D, there are four subpixels. It can also be thought of as each of these elements forming a single pixel.

[0193] In Figure 19D, one pixel is formed by four subpixels enclosed by dotted lines. Let me explain. One pixel consists of two subpixels 311SR, one subpixel 311G, and one It has a sub-pixel 311B and such a pixel. In this way, one pixel has a sub-pixel that has a light-receiving function. Having multiple sensors allows for high-resolution imaging. Therefore, the accuracy of biometric authentication... This can be improved. For example, the resolution of the image can be set to the square root of 2 times the resolution of the display. It is possible.

[0194] A display device to which the configuration shown in Figure 19C or Figure 19D is applied has p units (where p is an integer of 2 or more). A first light-emitting element of ) and a second light-emitting element of q (where q is an integer greater than or equal to 2) and r (where r is an integer greater than or equal to p) It has a light-emitting element (an integer greater than q) and a receiving element. p and r satisfy r=2p. Also, p, q, and r satisfy r=p+q. One of the first light-emitting element and the second light-emitting element is One emits green light, and the other emits blue light. The light-receiving element emits red light and also receives light. It has a function.

[0195] For example, when using a light-emitting / receiving device to perform touch detection, the light emitted from the light source is visible to the user. It is preferable that it is difficult to do so. Because blue light is less visible than green light, blue light It is preferable to use an emitting light-emitting element as the light source. Therefore, the receiving light-emitting element receives blue light. It is preferable that it has a light-emitting function.

[0196] As described above, a display device according to one aspect of the present invention can be used to apply pixels of various arrangements. Cut.

[0197] The display device of this embodiment does not require changing the pixel arrangement in order to incorporate a light-receiving function into the pixels. Because there is no aperture ratio and resolution, the display unit can be equipped with imaging and sensing functions. Either one or both can be added.

[0198] [Light-emitting element] Figures 20A to 20E show examples of stacked structures for light-emitting and receiving elements.

[0199] The light-emitting and receiving device has at least an active layer and a light-emitting layer between a pair of electrodes.

[0200] The light-emitting and receiving device has layers other than the active layer and the light-emitting layer that are highly suitable for hole injection and hole transport. Materials with high hole blocking properties, materials with high electron transport properties, materials with high electron injection properties , a substance with high electron blocking properties, or a bipolar substance (with electron transport and hole transport properties) It may further have a layer containing a high-quality substance, etc.

[0201] The light-emitting and receiving devices shown in Figures 20A to 20C each consist of a first electrode 180 and a hole injection layer 1, respectively. 81, hole transport layer 182, active layer 183, light-emitting layer 193, electron transport layer 184, electron injection layer It has electrode 185 and a second electrode 189.

[0202] Note that the light-emitting and light-receiving devices shown in Figures 20A to 20C each have an active layer 183 on the light-emitting element. It can be said that this is a configuration with the addition of the active layer 183. By simply adding a film-forming step, it is possible to form light-emitting and light-receiving elements in parallel with the formation of light-emitting elements. Yes, it is possible. Furthermore, the light-emitting element and the light-receiving element can be formed on the same substrate. Therefore, Therefore, without significantly increasing the manufacturing process, the display unit can incorporate either an imaging function or a sensing function. It can grant both.

[0203] The stacking order of the light-emitting layer 193 and the active layer 183 is not limited. In Figure 20A, the hole transport layer 1 An example in which an active layer 183 is provided on 82, and a light-emitting layer 193 is provided on the active layer 183. As shown, Figure 20B also shows that a light-emitting layer 193 is provided on the hole transport layer 182, and the light-emitting layer 19 An example is shown in which the active layer 183 is provided on 3. Also, the active layer 183 and the light-emitting layer 193 are As shown in Figures 20A and 20B, they may be in contact with each other.

[0204] As shown in Figure 20C, a buffer layer is sandwiched between the active layer 183 and the light-emitting layer 193. It is preferable to have a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. At least one layer can be used from among an infill layer, a hole blocking layer, and an electron blocking layer. Figure 20C shows an example in which the hole transport layer 182 is used as the buffer layer.

[0205] By providing a buffer layer between the active layer 183 and the light-emitting layer 193, the active layer 193 can be activated. The transfer of excitation energy to the tempered layer 183 can be suppressed. Furthermore, by using a buffer layer, The optical path length (cavity length) of the micro-resonance (microcavity) structure can also be adjusted. Therefore, from a light-emitting / receiving device having a buffer layer between the active layer 183 and the light-emitting layer 193 This allows for high luminescence efficiency.

[0206] The light-emitting element shown in Figure 20D does not have a hole transport layer 182, as shown in Figures 20A and 20C. The light-emitting element shown is different. The light-emitting element consists of a hole injection layer 181, a hole transport layer 182, and an electron The transport layer 184 and the electron injection layer 185 do not necessarily have to be at least one of them. Furthermore, the light-emitting / receiving element may have other functional layers such as a hole blocking layer or an electron blocking layer. stomach.

[0207] The light-emitting device shown in Figure 20E does not have an active layer 183 and an emissive layer 193, and the emissive layer and active It differs from the light-emitting / receiving devices shown in Figures 20A to 20C in that it has a layer 186 that also serves as a layer.

[0208] For example, the layer 186 that serves as both the light-emitting layer and the active layer can be used as the active layer 183. An n-type semiconductor, a p-type semiconductor that can be used in the active layer 183, and a light-emitting layer 193 A layer containing three materials, including a light-emitting substance, can be used.

[0209] Furthermore, the absorption spectrum of a mixed material of n-type and p-type semiconductors is shown for the lowest energy side. The absorption band and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material overlap with each other. It is preferable not to be in contact with each other, and even more preferable to be sufficiently far apart.

[0210] In a light-receiving device, a conductive film that transmits visible light is used for the electrode that extracts light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light. .

[0211] When the light-emitting element is driven as a light-emitting element, the hole injection layer delivers holes from the anode to the hole transport layer. This is the layer to be injected. The hole injection layer is a layer containing a material with high hole injection properties. High-performance materials include composite materials such as hole transport materials and acceptor materials (electron-accepting materials). By using composite materials or aromatic amine compounds (compounds having an aromatic amine skeleton), It is possible.

[0212] When a light-emitting device is driven as a light-emitting element, the hole transport layer is injected by the hole injection layer into the anode. This is a layer that transports the injected holes to the light-emitting layer. The hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. Yes, there is. The hole transport layer is a layer containing a hole-transporting material. As for the hole-transporting material, 1×1 0 -6 cm 2 A material having a hole mobility of / Vs or higher is preferred. Note that holes are more powerful than electrons. Other materials with high transportability can also be used. Hole transport materials and For example, π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives) Materials with high hole transport properties, such as furan derivatives and aromatic amine compounds, are preferred.

[0213] When driving a light-emitting / receiving device as a light-emitting device, the electron transport layer is subjected to electron injection by the electron injection layer, and the cathode... This is the layer that transports the injected electrons to the light-emitting layer. The electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. Yes, there is. The electron transport layer is a layer containing an electron transport material. As for the electron transport material, 1×1 0 -6 cm 2 A material having an electron mobility of / Vs or higher is preferred. Other materials with high transportability can also be used. Electron transport materials and For example, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, oxa In addition to metal complexes with a zole skeleton and metal complexes with a thiazole skeleton, oxadiazo Imidazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole Derivatives, phenanthroline derivatives, quinoline derivatives having quinoline ligands, benzoquino Phosphorus derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipy Lysine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds Materials with high electron transport properties, such as aromatic compounds, can be used.

[0214] When a light-emitting element is driven as a light-emitting element, the electron injection layer transfers electrons from the cathode to the electron transport layer. This is the layer into which electrons are injected. The electron injection layer is a layer containing a material with high electron injection properties. High-quality materials include alkali metals, alkaline earth metals, or compounds thereof. This is possible. Materials with high electron injection properties include electron transport materials and electron donor materials. Composite materials containing (a material with properties) can also be used.

[0215] The light-emitting layer 193 is a layer containing a light-emitting material. The light-emitting layer 193 emits one or more types of light. It may contain substances. Examples of luminescent substances include blue, purple, blue-violet, green, yellow-green, and yellow. Substances that emit light in various colors such as orange and red are used as appropriate. In addition, near-infrared light is used as the light-emitting material. It is also possible to use light-emitting materials.

[0216] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials. It can be done.

[0217] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, and triphenylene derivatives. Body, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofluorene Dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrim Examples include din derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0218] Examples of phosphorescent materials include 4H-triazole skeletons, 1H-triazole skeletons, and imi Organometallic complexes having a dazole, pyrimidine, pyrazine, or pyridine skeleton. The form (especially iridium complexes) uses phenylpyridine derivatives having electron-withdrawing groups as ligands. Examples include organometallic complexes (especially iridium complexes), platinum complexes, and rare earth metal complexes.

[0219] The light-emitting layer 193 contains one or more organic compounds in addition to the light-emitting substance (guest material). It may contain host material, assist material, etc. One or more types of organic compounds In this case, either or both hole-transporting materials and electron-transporting materials can be used. Using one or more types of organic compounds, bipolar materials or TADF materials are used. That's fine.

[0220] The light-emitting layer 193 is, for example, a combination of a phosphorescent material and holes that readily form an excitation complex. It is preferable to have a transportable material and an electron transportable material. Therefore, the energy transfer from the excited complex to the light-emitting material (phosphorescent material) is called ExTET (Ex Efficient luminescence using ciplex-triplet energy transfer This can be easily obtained. By selecting combinations that form excitation complexes that emit light, energy transfer can be controlled. This creates a smoother surface, allowing for efficient emission of light. This configuration enables high efficiency of the light-emitting element. It enables both low-voltage operation and long lifespan simultaneously.

[0221] As for combinations of materials that form excited complexes, the HOMO level of the hole transport material (highest) It is preferable that the occupied orbital level is greater than or equal to the HOMO level of the electron-transporting material. The LUMO level (lowest unoccupied orbital level) of the material is greater than or equal to the LUMO level of the electron transport material. This is preferable. The LUMO and HOMO levels of the material are determined by cyclic voltammetry. Derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by CV (Cold Voltage) measurement. It is possible.

[0222] The formation of excited complexes is, for example, the emission spectrum of hole transport materials, the emission spectrum of electron transport materials. The emission spectra of the individual molecules and the mixed film made by mixing these materials were compared, and the emission spectrum of the mixed film was determined. The vector shifts to a longer wavelength than the emission spectrum of each material (or a new one is added to the longer wavelength side). This can be confirmed by observing a phenomenon (with a peak). Alternatively, hole transport material Transient photoluminescence (PL) of materials, transient PL of electron transport materials, and these materials The transient PL of the mixed films was compared, and the transient PL lifetime of the mixed film was found to be different from the transient PL lifetime of each individual material. We can observe differences in transient response, such as the presence of longer-lived components or a larger proportion of delayed components. This can be confirmed by measurement. Furthermore, the transient PL mentioned above is transient electroluminescent It can also be read as Nessence (EL). That is, transient EL of hole transporting materials, electric The transient EL of materials with particle transport properties and the transient EL of mixed films thereof were compared, and the transient response was examined. The formation of excited complexes can also be confirmed by observing the differences.

[0223] The active layer 183 contains a semiconductor. This semiconductor may be an inorganic semiconductor such as silicon, and Examples include organic semiconductors containing organic compounds. In this embodiment, the semiconductor having an active layer An example using an organic semiconductor as the main body is shown. By using an organic semiconductor, the light-emitting layer 193 and The active layer 183 and the other can be formed by the same method (e.g., vacuum deposition), and the manufacturing apparatus It is preferable because it can be standardized.

[0224] The n-type semiconductor material of the active layer 183 is fullerene (for example, C 60 , C 70 Examples include electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerenes are, It has a shape similar to a soccer ball, and this shape is energetically stable. (Fullerene) In this case, both the HOMO and LUMO levels are deep (low). In fullerenes, the LUMO level is Because of its deep pores, it has extremely high electron-accepting properties. Usually, like benzene, When π-electron conjugation (resonance) spreads across a surface, electron-donating ability (donor ability) increases, but fullerenes Because it has a spherical shape, even though the π electrons are spread out widely, it has high electron-accepting properties. High electron-accepting ability allows for rapid and efficient charge separation, making it useful as a photodetector. Yes. C 60 , C 70 Both have a broad absorption band in the visible light region, and especially C 70 is C 60 Compared to other systems, it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region.

[0225] Furthermore, as materials for n-type semiconductors, metal complexes with a quinoline skeleton and benzoquinoline skeletons are also used. Metal complexes having a tigmatic structure, metal complexes having an oxazole skeleton, metals having a thiazole skeleton Complex, oxadiazole derivative, triazole derivative, imidazole derivative, oxazo thiazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinol derivatives Dibenzoquinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyri Zin derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives Examples include rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0226] The p-type semiconductor material of the active layer 183 is copper(II) phthalocyanine (Cop per(II) phthalocyanine (CuPc), tetraphenyldibenzo Tetraphenyldibenzoperiflanthene; DBP), Zinc Phthalocyanine (ZnPc) Examples include electron-donating organic semiconductor materials such as tin phthalocyanine (SnPc) and quinacridone. It can be done.

[0227] Furthermore, p-type semiconductor materials include carbazole derivatives, thiophene derivatives, and furan derivatives. Examples include conductors and aromatic amine compounds. Furthermore, naphtha is an example of a material for p-type semiconductors. Pyrene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives Conductors, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives Body, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, Porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives Conductors, polyphenylene vinylene derivatives, poly-p-phenylene derivatives, polyfluorene derivatives Examples include polyvinylcarbazole derivatives and polythiophene derivatives.

[0228] The HOMO level of electron-donating organic semiconductor materials is the same as the HOM level of electron-accepting organic semiconductor materials. It is preferable that the LUMO level be shallower (higher) than the O level. LUMO level of electron-donating organic semiconductor materials It is preferable that the LUMO level is shallower (higher) than that of the electron-accepting organic semiconductor material.

[0229] As an electron-accepting organic semiconductor material, spherical fullerenes are used, and electron-donating organic semiconductors It is preferable to use an organic semiconductor material with a shape close to a plane as the main material. The offspring tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals Because it is nearby, carrier transportability can be improved.

[0230] For example, the active layer 183 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. stomach.

[0231] The layer 186, which serves as both the light-emitting layer and the active layer, contains the aforementioned light-emitting material, n-type semiconductor, and p-type semiconductor. It is preferable to use this method to form the product.

[0232] Hole injection layer 181, hole transport layer 182, active layer 183, light-emitting layer 193, electron transport layer 18 4. The electron injection layer 185 and the layer 186 which serves as both the light-emitting layer and the active layer contain low molecular weight compounds and Any polymeric compound may be used, and inorganic compounds may also be included. Each layer is Formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. It is possible.

[0233] In the following, using Figures 21 to 23, the light-emitting and light-receiving elements of a display device according to one embodiment of the present invention will be described. The detailed configuration of the light-emitting element will be explained.

[0234] A display device according to one aspect of the present invention emits light in the direction opposite to the substrate on which the light-emitting element is formed. Top emission type, where light is emitted towards the substrate side where the light-emitting element is formed. It may be either a cushion type or a dual-emission type that emits light from both sides.

[0235] Figures 21 to 23 illustrate the concept using a top-emission type display device as an example.

[0236] [Configuration Example 1] The display device shown in Figures 21A and 21B has a layer 35 containing transistors on a substrate 151. Through 5, a light-emitting element 347B that emits blue (B) light, and a light-emitting element that emits green (G) light... Child 347G has a light-receiving element 347SR that emits red (R) light and has a light-receiving function. do.

[0237] Figure 21A shows the case where the light-emitting element 347SR functions as a light-emitting element. Then, light-emitting element 347B emits blue light, and light-emitting element 347G emits green light, and light-receiving and receiving occurs. This shows an example where element 347SR emits red light.

[0238] Figure 21B shows the case where the light-receiving element 347SR functions as a light-receiving element. So, the blue light emitted by light-emitting element 347B and the green light emitted by light-emitting element 347G, This shows an example of detection by the light-receiving element 347SR.

[0239] The light-emitting element 347B, the light-emitting element 347G, and the light-receiving element 347SR are, respectively, pixels. It has an electrode 191 and a common electrode 115. In this embodiment, the pixel electrode 191 is the anode. We will explain using the example of a case where the common electrode 115 functions as the cathode.

[0240] In this embodiment, similar to the light-emitting element, the light-receiving element 347SR also has a pixel electrode 1 This explanation assumes that 91 functions as the anode and the common electrode 115 functions as the cathode. Furthermore, the light-emitting element 347SR has a reverse bias between the pixel electrode 191 and the common electrode 115. By driving it, the light incident on the light-emitting element 347SR is detected, generating an electric charge. It can be extracted as an electric current.

[0241] The common electrode 115 is connected to the light-emitting element 347B, the light-emitting element 347G, and the light-receiving element 347SR. It is commonly used in [these contexts].

[0242] A pair of electrodes located on the light-emitting element 347B, the light-emitting element 347G, and the light-receiving element 347SR. The materials and film thickness can be made the same. This reduces the manufacturing cost of the display device. Furthermore, the manufacturing process can be simplified.

[0243] The configuration of the display device shown in Figures 21A and 21B will be explained in detail.

[0244] The light-emitting element 347B has a buffer layer 192B, a light-emitting layer 193B, and on the pixel electrode 191. The buffer layer 194B is located in this order. The light-emitting layer 193B is a light-emitting material that emits blue light. It has the function of emitting blue light.

[0245] The light-emitting element 347G has a buffer layer 192G, a light-emitting layer 193G, and on the pixel electrode 191. The buffer layer 194G is located in this order. The light-emitting layer 193G is made of a light-emitting material that emits green light. It has the function of emitting green light.

[0246] The light-emitting element 347SR has a buffer layer 192R and an active layer 183 on the pixel electrode 191. The device has a light-emitting layer 193R and a buffer layer 194R in that order. The light-emitting layer 193R is red It has a light-emitting substance. The active layer 183 emits light with a shorter wavelength than red light (for example, green light). It contains an organic compound that absorbs either or both of the following: colored light and blue light. 83 may be an organic compound that absorbs not only visible light but also ultraviolet light. 347SR has the function of emitting red light. The light-receiving element 347SR is connected to the light-emitting element 34 It has a function to detect the light emission of at least one of 7G and the light-emitting element 347B, and detects the light emission of both. It is preferable that it has a detection function.

[0247] The active layer 183 is less likely to absorb red light and absorbs light with a shorter wavelength than red light. It is preferable that it has an organic compound. As a result, the light-emitting element 347SR emits red light. It is equipped with a function to efficiently emit light and a function to accurately detect light with a wavelength shorter than red light. It is possible.

[0248] Pixel electrode 191, buffer layer 192R, buffer layer 192G, buffer layer 192B, active Light layer 183, light-emitting layer 193R, light-emitting layer 193G, light-emitting layer 193B, buffer layer 194R, The buffer layer 194G, buffer layer 194B, and common electrode 115 each have a single-layer structure. It may be a laminated structure, or it may be a layered structure.

[0249] In the display device shown in Figures 21A and 21B, the buffer layer, active layer, and light-emitting layer are element These are layers that can be created separately for each individual child.

[0250] Buffer layers 192R, 192G, and 192B are the hole injection layer and the hole transport layer, respectively. It may have one or both. Furthermore, buffer layers 192R, 192G, 192 B may have an electron block layer. Buffer layers 194B, 194G, and 194R are Each of these can have either an electron injection layer or an electron transport layer, or both. The buffer layers 194R, 194G, and 194B may have hole-blocking layers. Regarding the materials of each layer constituting the light-emitting element, see the explanation of each layer constituting the light-receiving element described above. You can refer to Akira.

[0251] [Configuration Example 2] As shown in Figures 22A and 22B, there is a light-emitting element 347B, a light-emitting element 347G, and a light-receiving and light-emitting device. The element 347SR may have a common layer between the pair of electrodes. This allows for the fabrication process. It is possible to incorporate light-emitting and receiving elements into the display device without significantly increasing the size.

[0252] The light-emitting element 347B, light-emitting element 347G, and light-receiving element 347SR shown in Figure 22A are, In addition to the configurations shown in Figures 21A and 21B, the building also includes common layers 112 and 114.

[0253] The light-emitting element 347B, light-emitting element 347G, and light-receiving element 347SR shown in Figure 22B are, Buffer layers 192R, 192G, 192B and buffer layers 194R, 194G, 194B The configuration shown in Figures 21A and 21B does not have a common layer 112 and a common layer 114. It is different.

[0254] The common layer 112 may have one or both of the hole injection layer and the hole transport layer. The common layer 114 may have one or both of the electron injection layer and the electron transport layer.

[0255] Common layer 112 and common layer 114 may each be a single-layer structure or a laminated structure. That's fine.

[0256] [Configuration Example 3] The display device shown in Figure 23A applies the stacked structure shown in Figure 20C to the light-emitting / receiving element 347SR. This is an example of that.

[0257] The light-emitting element 347SR has a hole injection layer 181, an active layer 183, and a positive electrode 191. Pore ​​transport layer 182R, light-emitting layer 193R, electron transport layer 184, electron injection layer 185, and common electron The cards with the number 115 are in this order.

[0258] The hole injection layer 181, electron transport layer 184, electron injection layer 185, and common electrode 115 are generated This is a common layer for the optical element 347G and the light-emitting element 347B.

[0259] The light-emitting element 347G has a hole injection layer 181 and a hole transport layer 182G on the pixel electrode 191. The light-emitting layer 193G, electron transport layer 184, electron injection layer 185, and common electrode 115 are arranged in this order. To possess.

[0260] The light-emitting element 347B has a hole injection layer 181 and a hole transport layer 182B on the pixel electrode 191. The light-emitting layer 193B, electron transport layer 184, electron injection layer 185, and common electrode 115 are arranged in this order. To possess.

[0261] The light-emitting element of the display device of this embodiment is fitted with a microcavity structure. It is preferable that there be such a pair of electrodes in the light-emitting element. Preferably, the electrode has both permeability and reflectivity (semi-permeable / semi-reflective electrode), and the other is Preferably, the electrode is reflective to visible light (reflective electrode). By having a microcavity structure, the light emitted from the light-emitting layer is made to resonate between the two electrodes. This allows for the enhancement of light emitted from a light-emitting element.

[0262] Furthermore, semi-transmissive / semi-reflective electrodes are electrodes that transmit visible light (transparent electrodes) to reflective electrodes. A laminated structure with (also called poles) can be formed. In this specification, they are referred to as semi-transparent and semi-transparent, respectively. Reflective electrodes that function as part of the reflective electrode are referred to as pixel electrodes or common electrodes, and transparent electrodes are Although sometimes referred to as an optical adjustment layer, the transparent electrode (optical adjustment layer) is also a pixel electrode or common electrode. It can be said that it has the function of being a stylist.

[0263] The light transmittance of the transparent electrode shall be 40% or more. For example, the light-emitting element shall emit visible light (wavelength 4 Light (wavelengths between 00nm and less than 750nm) and near-infrared light (wavelengths between 750nm and 1300nm) It is preferable to use electrodes in which the transmittance of each of the two types of light is 40% or more. The reflectance of the hyper- and semi-reflective electrodes for visible light and near-infrared light, respectively, is preferably between 10% and 95%. Or, it shall be between 30% and 80%. Reflectance of the reflective electrode in visible light and near-infrared light, respectively. This shall be 40% to 100%, preferably 70% to 100%. The resistivity of the electrode is 1 × 10⁻⁶ -2 A value of Ωcm or less is preferable.

[0264] The hole transport layers 182B, 182G, and 182R each function as optical adjustment layers. It may be done. Specifically, the light-emitting element 347B has an optical distance between a pair of electrodes that allows blue light to pass through. It is preferable to adjust the film thickness of the hole transport layer 182B so that the optical distance is such that the effect is enhanced. Similarly, the light-emitting element 347G has an optical distance between its pair of electrodes that enhances the green light. It is preferable to adjust the film thickness of the hole transport layer 182G accordingly. And the light-emitting element 3 47SR uses a hole channel such that the optical distance between the pair of electrodes is the optical distance that enhances red light. It is preferable to adjust the film thickness of the transport layer 182R. The layer used as the optical adjustment layer is a hole transport layer. It is not limited to layers. Furthermore, in the case of a semi-transparent / semi-reflective electrode, the laminated structure of a reflective electrode and a transparent electrode. In other words, the optical distance between a pair of electrodes refers to the optical distance between a pair of reflective electrodes.

[0265] [Configuration Example 4] The display device shown in Figure 23B applies the stacked structure shown in Figure 20D to the light-emitting / receiving element 347SR. This is an example of that.

[0266] The light-emitting element 347SR has a hole injection layer 181, an active layer 183, and a light-emitting element on the pixel electrode 191. The optical layer 193R, electron transport layer 184, electron injection layer 185, and common electrode 115 are arranged in this order. do.

[0267] The hole injection layer 181, electron transport layer 184, electron injection layer 185, and common electrode 115 are generated This is a common layer for the optical element 347G and the light-emitting element 347B.

[0268] The light-emitting element 347G has a hole injection layer 181 and a hole transport layer 182G on the pixel electrode 191. The light-emitting layer 193G, electron transport layer 184, electron injection layer 185, and common electrode 115 are arranged in this order. To possess.

[0269] The light-emitting element 347B has a hole injection layer 181 and a hole transport layer 182B on the pixel electrode 191. The light-emitting layer 193B, electron transport layer 184, electron injection layer 185, and common electrode 115 are arranged in this order. To possess.

[0270] The hole transport layer is provided in the light-emitting element 347G and the light-emitting element 347B, and the receiving light-emitting element 347 It is not provided in SR. Thus, in addition to the active layer and the light-emitting layer, there are also light-emitting and light-receiving elements. A layer may be provided on only one of the optical elements.

[0271] The following describes the detailed configuration of a display device according to one embodiment of the present invention, using Figures 24 to 29. explain.

[0272] [Display device 310A] Figures 24A and 24B show cross-sectional views of the display device 310A.

[0273] The display device 310A includes a light-emitting element 190B, a light-emitting element 190G, and a light-receiving element 190S. It has R.

[0274] The light-emitting element 190B consists of a pixel electrode 191, a buffer layer 192B, a light-emitting layer 193B, and a buffer It has a layer 194B and a common electrode 115. The light-emitting element 190B emits blue light 321B. It has the function of emitting light.

[0275] The light-emitting element 190G consists of a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, and a buffer It has a layer 194G and a common electrode 115. The light-emitting element 190G emits green light 321G. It has the function of emitting light.

[0276] The light-emitting element 190SR consists of a pixel electrode 191, a buffer layer 192R, an active layer 183, and a light-emitting element. It has a layer 193R, a buffer layer 194R, and a common electrode 115. Light-emitting / receiving element 190SR It has the function of emitting red light 321R and the function of detecting light 322.

[0277] Figure 24A shows the case where the light-emitting element 190SR functions as a light-emitting element. Then, light-emitting element 190B emits blue light, and light-emitting element 190G emits green light, and light-receiving and receiving occurs. This shows an example of element 190SR emitting red light.

[0278] Figure 24B shows the case where the light-receiving element 190SR functions as a light-receiving element. So, the blue light emitted by light-emitting element 190B and the green light emitted by light-emitting element 190G, This shows an example of detection by the light-emitting / receiving element 190SR.

[0279] The pixel electrode 191 is located on the insulating layer 214. The end of the pixel electrode 191 is separated by the partition wall 216 It is covered by. Two adjacent pixel electrodes 191 are separated by a partition wall 216. It is electrically insulated (or electrically isolated).

[0280] An organic insulating film is preferred as the partition wall 216. Materials that can be used as the organic insulating film. Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide Amide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and these Examples include resin precursors. The partition wall 216 is a layer that transmits visible light. Alternatively, a partition that blocks visible light may be provided.

[0281] The display device 310A has a light-emitting / receiving element 19 between a pair of substrates (substrate 151 and substrate 152). It includes 0SR, light-emitting element 190G, light-emitting element 190B, and transistor 342, etc.

[0282] The light-receiving element 190SR has the function of detecting light. Specifically, the light-receiving element 190 The SR receives light 322 incident from outside the display device 310A and converts it into an electrical signal. It is a photoelectric conversion element. Light 322 is one of the light-emitting elements 190G and 190B. Both emission sources can also be described as light reflected by the object. Furthermore, light 322 is transmitted through the lens. The light may then be incident on the light-receiving element 190SR.

[0283] The light-emitting element 190G and the light-emitting element 190B have the function of emitting visible light. Specifically, The light-emitting element 190G and the light-emitting element 190B are located between the pixel electrode 191 and the common electrode 115. This is an electroluminescent element that emits light towards the substrate 152 when a voltage is applied (light 321G, (See Hikari 321B).

[0284] Buffer layer 192 (buffer layer 192R, buffer layer 192G, buffer layer 192B) , light-emitting layer 193 (light-emitting layer 193R, light-emitting layer 193G, light-emitting layer 193B), and buffer layer 194 (buffer layer 194R, buffer layer 194G, buffer layer 194B) is an organic layer ( It can also be called an EL layer (a layer containing organic compounds). The pixel electrode 191 reflects visible light. It is preferable that it has the function of transmitting visible light.

[0285] The pixel electrode 191 has an opening in the insulating layer 214 through which the transistor 342 is located. It is electrically connected to the source or drain. Transistor 342 is also a light-emitting element. It has the function of controlling the driving of the light-emitting and receiving elements.

[0286] At least a portion of the circuit electrically connected to the light-emitting element 190SR is the light-emitting element 190 G and the circuit electrically connected to the light-emitting element 190B are formed using the same material and process. It is preferable to do so. This is preferable to forming the two circuits separately, as it allows for the display device to be formed in a different way. The thickness can be reduced, and the manufacturing process can be simplified.

[0287] The light-emitting element 190SR, light-emitting element 190G, and light-emitting element 190B each have a protective layer. It is preferable that it is covered with 195. In Figure 24A, etc., the protective layer 195 is the common electrode 11 It is provided in contact with 5. By providing the protective layer 195, the light-emitting element 190SR and The inclusion of impurities in each color's light-emitting element is suppressed, and the light-emitting element 190SR and each color The reliability of the light-emitting element can be improved. Also, the adhesive layer 142 protects the protective layer 195 The circuit board 152 is bonded to it.

[0288] A light-shielding layer BM is provided on the surface of substrate 152 that faces substrate 151. The light-shielding layer BM is Positions overlapping with the optical element 190G and the light-emitting element 190B, and overlapping with the light-receiving element 190SR It has an opening at the position. In this specification, etc., the light-emitting element 190G or light-emitting element The position that overlaps with 190B is, specifically, the position of light-emitting element 190G or light-emitting element 190B. This refers to the position that overlaps with the light region. Similarly, the position that overlaps with the light-emitting element 190SR is, specifically This refers to the position that overlaps with the light-emitting and light-receiving regions of the light-emitting element 190SR.

[0289] As shown in Figure 24B, the light emitted by the light-emitting element 190G or 190B is directed towards the object. The light-emitting element 190SR can detect the reflected light. However, the light-emitting element 1 The light emitted from 90G or the light-emitting element 190B is reflected within the display device 310A and transmitted through the object. In some cases, the light may be incident on the light-receiving element 190SR without being directed. The light-shielding layer BM is designed to prevent this. The effects of stray light can be suppressed. For example, if the light-shielding layer BM is not provided, The light 323 emitted by element 190G is reflected by the substrate 152, and the reflected light 324 is received by the light-emitting element 1 It may be incident on 90SR. By providing the light-shielding layer BM, the reflected light 324 is received by the light-emitting element. This can suppress the incident light on 190SR. This reduces noise and the light-emitting element 19 The sensitivity of sensors using 0SR can be increased.

[0290] As the light-shielding layer BM, a material that blocks light emission from the light-emitting element can be used. M preferably absorbs visible light. The light-shielding layer BM can be, for example, a metal material, or Using resin materials containing pigments (such as carbon black) or dyes, a black matrix is ​​created. It can form a shading layer BM is a red color filter, a green color filter It may also be a stacked structure of a blue color filter.

[0291] [Display device 310B] The display device 310B shown in Figure 25A consists of a light-emitting element 190G, a light-emitting element 190B, and a light-receiving and receiving element. Each element 190SR does not have a buffer layer 192 and a buffer layer 194, and does not have a common layer It differs from the display device 310A in that it has 112 and a common layer 114. In the explanation of the setup, the same configuration as the display device described earlier will be omitted from the explanation. There is.

[0292] The stacked structure of light-emitting element 190B, light-emitting element 190G, and light-receiving element 190SR is The configuration is not limited to that shown in the display devices 310A and 310B. Each element may include, for example, Figure 20~ The laminated structure shown in Figure 23 can be applied as appropriate.

[0293] [Display device 310C] Figure 25B shows that the display device 310C does not have substrates 151 and 152, but substrates 153 and 152. It differs from the display device 310B in that it has a plate 154, an adhesive layer 155, and an insulating layer 212.

[0294] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is bonded to the adhesive layer 142.

[0295] The display device 310C includes an insulating layer 212 formed on the fabricated substrate, a transistor 342, and a receiver. The light-emitting elements 190SR, 190G, and 190B, etc., are transferred onto the substrate 153. This configuration is manufactured by placing the substrates together. Substrates 153 and 154 are each flexible. It is preferable to have this feature. This can increase the flexibility of the display device 310C. For example, it is preferable to use resin for substrates 153 and 154, respectively.

[0296] Substrates 153 and 154 are made of polyethylene terephthalate (PET), respectively. ), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile Resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonates PC resin, polyethersulfone (PES) resin, polyamide resin (nylon, ethersulfone) Lamids, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide Doimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, poly Propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose Nanofibers or the like can be used. Either or both of substrates 153 and 154. Glass of a thickness sufficient to be flexible may be used.

[0297] The substrate of the display device in this embodiment may be a film with high optical isotropy. Films with high optical isotropy include triacetylcellulose (TAC, cellulose). Also called riacetate film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) films and acrylic films.

[0298] In the following sections, using Figures 26 to 29, we will describe in more detail the configuration of a display device according to one embodiment of the present invention. I will explain about this.

[0299] [Display device 100A] Figure 26 shows a perspective view of the display device 100A, and Figure 27 shows a cross-sectional view of the display device 100A. vinegar.

[0300] The display device 100A has a configuration in which substrate 152 and substrate 151 are bonded together. Figure 2 In diagram 6, circuit board 152 is clearly indicated by a dashed line.

[0301] The display device 100A includes a display unit 162, a circuit 164, wiring 165, etc. In Figure 26, This shows an example in which IC (integrated circuit) 173 and FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in Figure 26 includes a display device 100A, an IC, and an FPC. It could also be called a display module.

[0302] For example, a scan line drive circuit can be used as circuit 164.

[0303] The wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. The signal and power are input to wiring 165 from the outside via FPC172, or The signal is input from IC173 to wiring 165.

[0304] Figure 26 shows the COG (Chip On Glass) method or COF (Chip o This shows an example where IC173 is provided on substrate 151 using a method such as n Film. 173 can be applied to ICs that have, for example, a scan line drive circuit or a signal line drive circuit. Furthermore, the display device 100A and the display module may be configured without an IC. Alternatively, the IC may be mounted on the FPC using a COF (Core-on-Fiber) method or similar.

[0305] Figure 27 shows a portion of the region including the FPC172 of the display device 100A shown in Figure 26, and the circuitry. A portion of the area including 164, a portion of the area including the display unit 162, and a portion of the area including the end. An example of a cross-section when each of them is cut is shown.

[0306] The display device 100A shown in Figure 27 has a transistor 20 between substrate 151 and substrate 152. 1. Transistor 205, Transistor 206, Transistor 207, Light-emitting element 190B It includes a light-emitting element 190G, a light-receiving element 190SR, etc.

[0307] The substrate 152 and the insulating layer 214 are bonded together via the adhesive layer 142. Light-emitting element 190B For sealing the light-emitting element 190G and the light-receiving element 190SR, a solid sealing structure or a hollow sealing structure is used. Construction and other methods can be applied. In Figure 27, the substrate 152, adhesive layer 142, and insulating layer 214 are surrounded. The space 143 is filled with an inert gas (nitrogen, argon, etc.), forming a hollow sealed structure. The adhesive layer 142 is applied to the light-emitting element 190B, the light-emitting element 190G, and the light-receiving element. It may be provided in overlap with 190SR. Also, the substrate 152, adhesive layer 142, and insulation The space 143 surrounded by layer 214 may be filled with a resin different from the adhesive layer 142.

[0308] The light-emitting element 190B consists of a pixel electrode 191, a common layer 112, and a light-emitting layer 19 from the insulating layer 214 side. It has a stacked structure in which 3B, a common layer 114, and a common electrode 115 are stacked in that order. Pixel electrode 191 is connected to the conductive layer of transistor 207 through an opening provided in the insulating layer 214. It is connected to 222b. Transistor 207 controls the drive of the light-emitting element 190B. It has a function. The end of the pixel electrode 191 is covered by a partition wall 216. Pixel electrode 1 91 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0309] The light-emitting element 190G consists of a pixel electrode 191, a common layer 112, and a light-emitting layer 19 from the insulating layer 214 side. It has a stacked structure in which 3G, a common layer 114, and a common electrode 115 are stacked in that order. Pixel electrode 191 is connected to the conductive layer of transistor 206 through an opening provided in the insulating layer 214. It is connected to 222b. Transistor 206 controls the drive of the light-emitting element 190G. It has a function.

[0310] The light-emitting element 190SR consists of, from the insulating layer 214 side, a pixel electrode 191, a common layer 112, and an active layer A laminated structure in which 183, light-emitting layer 193R, common layer 114, and common electrode 115 are stacked in that order. It has. The pixel electrode 191 is connected to the transistor 2 through an opening provided in the insulating layer 214. It is electrically connected to the conductive layer 222b of 05. Transistor 205 is light-receiving and light-receiving. It has a function to control the drive of element 190SR.

[0311] The light emitted by the light-emitting element 190B, light-emitting element 190G, and light-receiving element 190SR is transmitted to the substrate 15 It is emitted to side 2. Also, the light-emitting element 190SR is connected to the substrate 152 and space 143. Then, light is incident. It is preferable to use a material with high transmittance to visible light for the substrate 152. It seems so.

[0312] The pixel electrode 191 can be manufactured using the same material and process. Common layer 112, The common layer 114 and the common electrode 115 are the light-emitting element 190B, the light-emitting element 190G, and the light-receiving element. It is used in common with child 190SR. The light-emitting element 190SR emits red light. This configuration adds an active layer 183 to the above structure. Also, light-emitting element 190B, light-emitting element 19 0G, the light-emitting element 190SR differs in the configuration of the active layer 183 and the light-emitting layers 193 of each color, except that the configuration of the active layer 183 and the light-emitting layers 193 of each color are different. All of them can have a common configuration. This allows for a significant increase in the manufacturing process. A light-receiving function can be added to the display unit 162 of the display device 100A.

[0313] A light-shielding layer BM is provided on the surface of substrate 152 that faces substrate 151. The light-shielding layer BM is Openings are made in positions that overlap with the optical element 190B, the light-emitting element 190G, and the light-receiving element 190SR. It has a mouth. By providing a light-shielding layer BM, the range in which the light-emitting element 190SR detects light is controlled. It can be controlled. Also, by having a light-shielding layer BM, the light-emitting element 1 can be controlled without going through an object. This suppresses direct light incidence from 90G or light-emitting element 190B to light-receiving element 190SR. Yes, it is possible. Therefore, it is possible to create a sensor with low noise and high sensitivity.

[0314] Transistor 201, transistor 205, transistor 206, and transistor 2 All of the 07s are formed on the substrate 151. These transistors are made of the same material. And it can be manufactured by the same process.

[0315] On the substrate 151 are insulating layers 211, 213, 215, and 214. They are arranged in this order. The insulating layer 211 has a portion that is connected to the gate insulating layer of each transistor. It functions as such. The insulating layer 213, a portion of which functions as the gate insulating layer of each transistor. The insulating layer 215 is provided covering the transistor. The insulating layer 214 is provided covering the transistor. It is provided covering the gate and has the function of a planarization layer. The number of insulating layers covering the zista is not limited; each layer may be a single layer or two or more layers. .

[0316] At least one layer of the insulating layer covering the transistor is designed to prevent the diffusion of impurities such as water and hydrogen. It is preferable to use a material. This allows the insulating layer to function as a barrier layer. This configuration effectively prevents impurities from diffusing into the transistor from the outside. This effectively suppresses the problem and improves the reliability of the display device.

[0317] Insulating layers 211, 213, and 215 are each made of inorganic insulating films. It is preferable that it be present. Examples of inorganic insulating films include silicon nitride films and silicon oxide nitride films. Films, silicon oxide films, silicon nitride films, aluminum oxide films, aluminum nitride films, etc. Any inorganic insulating film can be used. Also, hafnium oxide film, hafnium oxide nitride film Hafnium nitride film, yttrium oxide film, zirconium oxide film, gallium oxide film, Tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neophosphate film A damping film or the like may be used. Furthermore, two or more of the above-mentioned insulating films may be stacked and used. A base film may be provided between the plate 151 and the transistor. The above-mentioned inorganic insulating film may also be provided to the base film. A membrane can be used.

[0318] Here, organic insulating films often have lower barrier properties compared to inorganic insulating films. Therefore, The insulating film preferably has an opening near the end of the display device 100A. The ability to prevent impurities from entering the display device 100A through the organic insulating film from the edges is to be suppressed. Yes, it is possible. Alternatively, the edges of the organic insulating film can be positioned inward from the edges of the display device 100A. An organic insulating film may be formed so that the organic insulating film is not exposed at the edges of the display device 100A. .

[0319] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. The materials that can be used include acrylic resin, polyimide resin, epoxy resin, poly Mido resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, pheno Examples include resins and precursors of these resins.

[0320] In the region 228 shown in Figure 27, an opening is formed in the insulating layer 214. This allows for insulation Even when an organic insulating film is used for the edge layer 214, the display unit can be accessed from the outside via the insulating layer 214. This prevents impurities from entering 162. Therefore, the reliability of the display device 100A is improved. It can be improved.

[0321] Transistor 201, transistor 205, transistor 206, and transistor 2 07 consists of a conductive layer 221 that functions as a gate and an insulating layer 211 that functions as a gate insulating layer. conductive layers 222a and 222b, which function as source and drain, and semiconductor layer 23 1. An insulating layer 213 that functions as a gate insulating layer, and a conductive layer 2 that functions as a gate. 23 is present. Here, multiple layers obtained by processing the same conductive film have the same hatching A pattern is applied. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0322] The structure of the transistors in the display device of this embodiment is not particularly limited. For example, Using Lehner-type transistors, staggered transistors, inverse staggered transistors, etc. It is possible to use either a top-gate or bottom-gate transistor structure. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. That's fine.

[0323] Transistor 201, transistor 205, transistor 206, and transistor 2 In 07, a configuration is applied in which the semiconductor layer on which the channel is formed is sandwiched between two gates. By connecting two gates and supplying them with the same signal, the transistor is driven. It may be moved. Alternatively, one of the two gates may be supplied with a potential to control the threshold voltage. By supplying one terminal to the other and providing a potential for driving, the threshold voltage of the transistor can be controlled. good.

[0324] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors are also available. Single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors) Either a single-crystal semiconductor or a semiconductor having a crystalline region in part may be used. Using a crystalline semiconductor is preferable because it suppresses the degradation of transistor characteristics.

[0325] The semiconductor layer of a transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may have silicon. For example, amorphous silicon, crystalline silicon (low-temperature polysilicon, single-crystal silicon) Examples include:

[0326] The semiconductor layer is, for example, made of indium and M (where M is gallium, aluminum, silicon). Boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gelatin Lumanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, (One or more selected from tantalum, tungsten, and magnesium), and zinc It is preferable that it has, in particular M is aluminum, gallium, yttrium, and It is preferable that the material be one or more species selected from tin.

[0327] In particular, indium (In), gallium (Ga), and zinc (Zn) are used as semiconductor layers. It is preferable to use an oxide containing (also written as IGZO). Alternatively, indium, galvanic acid, It is preferable to use oxides containing indium, zinc, and tin. Alternatively, indium and zinc It is preferable to use an oxide having the following properties.

[0328] In the case of an In-M-Zn oxide semiconductor layer, the original In in the In-M-Zn oxide The atom ratio is preferably greater than or equal to the atom ratio of M. As for the atomic ratio of group elements, the composition is In:M:Zn=1:1:1 or close to it, In:M :Zn=1:1:1.2 or a composition near that, In:M:Zn=2:1:3 or Nearby compositions, In:M:Zn=3:1:2 or nearby compositions, In:M:Zn=4: A composition of 2:3 or nearby, In:M:Zn=4:2:4.1 or nearby, In:M:Zn=5:1:3 or a composition near that, In:M:Zn=5:1:6 or The composition in that vicinity, In:M:Zn=5:1:7 or the composition in that vicinity, In:M:Zn= A composition of 5:1:8 or close to it, or In:M:Zn=10:1:3 or close to it. , composition In:M:Zn=6:1:6 or nearby, In:M:Zn=5:2:5 or Examples include compositions in the vicinity of the desired atomic ratio. Note that a composition in the vicinity is defined as being within ±30% of the desired atomic ratio. This includes the range.

[0329] For example, when describing a composition where the atomic ratio is In:Ga:Zn=4:2:3 or close to it... When the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atoms of Zn This includes cases where the numerical ratio is between 2 and 4. Also, cases where the atomic ratio is In:Ga:Zn = 5:1:6. Or, when describing a composition in the vicinity of that, the atomic ratio of In is 5, and the atomic number of Ga This includes cases where the ratio is greater than 0.1 and less than or equal to 2, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing the composition as having an atomic ratio of In:Ga:Zn = 1:1:1 or close to it, When the atomic ratio of In is set to 1, the atomic ratio of Ga is greater than 0.1 and less than or equal to 2, Z This includes cases where the atomic ratio of n is greater than 0.1 and less than or equal to 2.

[0330] The transistors in circuit 164 and the transistors in display unit 162 have the same structure. It may be, or it may be a different structure. The multiple transistors in circuit 164 The structure may be the same for all, or there may be two or more types. Similarly, the display unit 162 may The structures of the multiple transistors may all be the same, or there may be two or more different structures.

[0331] A connection portion 204 is provided in the area of ​​substrate 151 where substrate 152 does not overlap. In the connecting section 204, the wiring 165 is connected to the FPC 172 via the conductive layer 166 and the connecting layer 242. They are electrically connected. The upper surface of the connection part 204 is made of the same conductive film as the pixel electrode 191. The conductive layer 166 obtained is exposed. This allows the connection part 204 and the FPC 172 to be It can be electrically connected via the connecting layer 242.

[0332] Various optical components can be placed on the outside of the substrate 152. These optical components include polarizing elements. Examples include plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-gathering films. Furthermore, the outside of the substrate 152 has an antistatic film to suppress the adhesion of dust and dirt. A water-repellent film to prevent damage, a hard coat film to suppress scratches during use, an impact-absorbing layer, etc. You may place it there.

[0333] Substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, and Resins and the like can be used. Flexible materials can be used for substrates 151 and 152. This increases the flexibility of the display device.

[0334] The adhesive layer can be a photocuring adhesive such as an UV-curing type, a reaction-curing adhesive, or a thermosetting adhesive. Various types of curing adhesives, such as anaerobic adhesives, can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imi Plastic resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E Examples include VA (ethylene vinyl acetate) resin. In particular, the moisture permeability of epoxy resins, etc. Materials with low properties are preferred. A two-part resin mixture may also be used. Furthermore, adhesive sheets, etc. You may use it.

[0335] As a connecting layer, an anisotropic conductive film (ACF) is used. (Active Film), Anisotropic Conductive Paste (ACP: Anisotropic Conductive Film) You can use inductive pastels, etc.

[0336] In addition to the gate, source, and drain of a transistor, various wirings that constitute a display device and Materials that can be used for conductive layers such as electrodes include aluminum, titanium, and chromium. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten Examples include metals such as tungsten, and alloys in which such metals are the main component. A film containing this material can be used as a single layer or as a multilayer structure.

[0337] Furthermore, examples of conductive materials that are translucent include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides or graphites such as zinc oxide, zinc oxide, and zinc oxide containing gallium You can use silver, platinum, magnesium, nickel, or tungsten. Metal materials such as tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium. Alternatively, an alloy material containing the metal material can be used. Or, a nitride of the metal material. (For example, titanium nitride) may be used. When using nitrides, it is preferable to make them thin enough to be translucent. A laminated film of the aforementioned material can be used as a conductive layer. For example, an alloy of silver and magnesium and Using a multilayer film of indium tin oxide is preferable because it can improve conductivity. These include conductive layers such as various wirings and electrodes that constitute the display device, light-emitting elements, and light-receiving and receiving elements. It can also be used in conductive layers of the element (conductive layers that function as pixel electrodes or common electrodes). It is possible.

[0338] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as fats, silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, acid Examples include inorganic insulating materials such as aluminum oxide.

[0339] [Display device 100B] Figure 28A shows a cross-sectional view of the display device 100B.

[0340] Display device 100B differs from display device 100A mainly in that it has a protective layer 195. Detailed explanations of the configuration similar to that of display device 100A will be omitted.

[0341] A protective layer 195 covering the light-emitting element 190B, the light-emitting element 190G, and the light-receiving element 190SR. By providing this, water is supplied to the light-emitting element 190B, the light-emitting element 190G, and the light-receiving element 190SR. This suppresses the intrusion of impurities such as the light-emitting element 190B, the light-emitting element 190G, and the receiving element. This can improve the reliability of the 190SR optical element.

[0342] In the region 228 near the end of the display device 100B, through the opening of the insulating layer 214, It is preferable that the edge layer 215 and the protective layer 195 are in contact with each other. In particular, the insulating layer 215 has It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 195 are in contact with each other. This prevents impurities from entering the display unit 162 from the outside via the organic insulating film. This is possible. Therefore, the reliability of the display device 100B can be improved.

[0343] The protective layer 195 may be a single layer or a laminated structure. For example, the protective layer 195 may be a multilayer structure. An inorganic insulating layer on the conductive electrode 115, an organic insulating layer on the inorganic insulating layer, and an inorganic insulating layer on the organic insulating layer It may also be a three-layer structure having a layer and a layer. In this case, the inorganic insulating film is closer to the edge of the organic insulating film. It is preferable to extend the end outwards.

[0344] Furthermore, a lens may be provided in the region overlapping with the light-emitting element 190SR. This makes it possible to improve the sensitivity and accuracy of the sensor using the light-emitting / receiving element 190SR.

[0345] The lens preferably has a refractive index of 1.3 to 2.5. The lens is made of an inorganic material. It can be formed using at least one of a material and an organic material. For example, a material containing a resin. The material can be used in lenses. Also, materials containing at least one of an oxide and a sulfide. It can be used as a lens.

[0346] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, and aromatic rings Resins containing sulfur, etc., can be used in lenses. Alternatively, a resin and the said resin Materials containing nanoparticles of materials with a higher refractive index can be used in lenses. Alternatively, zirconium oxide or similar materials can be used as nanoparticles.

[0347] Also, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide Acids containing tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, indium and tin. Indium oxides, or oxides containing indium, gallium, and zinc, can be used in lenses. Alternatively, zinc sulfide or similar materials can be used in the lens.

[0348] In addition, in the display device 100B, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 is bonded to the light-emitting element 190B, the light-emitting element 190G, and the light-receiving element. Each element 190SR is placed on top of the display device 100B, and the display device 100B has a solid encapsulation structure This is applied.

[0349] [Display device 100C] Figure 29A shows a cross-sectional view of the display device 100C.

[0350] The transistor structure of display device 100C differs from that of display device 100B.

[0351] The display device 100C has transistors 208, 209, and on the substrate 151. It has a transistor 210.

[0352] Transistors 208, 209, and 210 are gates. Functional conductive layer 221, insulating layer 211 functioning as a gate insulating layer, channel forming region 2 A semiconductor layer having 31i and a pair of low-resistance regions 231n, one of the pair of low-resistance regions 231n A conductive layer 222a connects to one side, and a conductive layer 222 connects to the other side of the pair of low-resistance regions 231n. b. An insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and Furthermore, it has an insulating layer 215 that covers the conductive layer 223. The insulating layer 211 is connected to the conductive layer 221. It is located between the flannel-forming region 231i and the insulating layer 225, which forms a channel with the conductive layer 223. It is located between region 231i and region 231i.

[0353] The conductive layer 222a and the conductive layer 222b are provided on the insulating layer 225 and the insulating layer 215, respectively. The conductive layer 222a and conductive layer 22 are connected to the low-resistance region 231n through the cut-out opening. Of the two components in 2b, one functions as the source and the other as the drain.

[0354] The pixel electrode 191 of the light-emitting element 190G is connected to the transistor 208 via the conductive layer 222b. It is electrically connected to one of the pair of low-resistance regions 231n.

[0355] The pixel electrode 191 of the light-emitting element 190SR is connected to the transistor 20 via the conductive layer 222b. The other of the pair of low-resistance regions 231n of 9 is electrically connected.

[0356] Figure 29A shows an example where the insulating layer 225 covers the top and sides of the semiconductor layer. On the other hand, Figure 29 In transistor 202 shown in B, the insulating layer 225 is the channel formation region of the semiconductor layer 231. It overlaps with 231i, but does not overlap with the low-resistance region 231n. For example, the conductive layer 223 is masked. By processing the insulating layer 225, the structure shown in Figure 29B can be fabricated. In Figure 29B, the insulating layer 225 is fabricated. An insulating layer 215 is provided covering the edge layer 225 and the conductive layer 223, and through the openings in the insulating layer 215 The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0357] Furthermore, the display device 100C does not have substrates 151 and 152, but has substrates 153 and 1 It differs from the display device 100B in that it has an adhesive layer 155 and an insulating layer 212.

[0358] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 195 is bonded to the adhesive layer 142.

[0359] The display device 100C includes an insulating layer 212 formed on the fabricated substrate, a transistor 208, and Transistor 209, transistor 210, light-emitting element 190SR, and light-emitting element 190G The structure is manufactured by transferring these onto the substrate 153. It is preferable that each of these has flexibility. It can improve.

[0360] The insulating layer 212 can be used in insulating layer 211, insulating layer 213, and insulating layer 215. A suitable inorganic insulating film can be used.

[0361] As described above, the display device of this embodiment has a light-emitting element in the subpixel that exhibits any of the colors. Instead, a light-receiving element is provided. The light-receiving element serves as both a light-emitting element and a light-receiving element. This allows for the addition of light-receiving functionality to pixels without increasing the number of subpixels included in each pixel. Furthermore, it is possible to add light-receiving functionality to pixels without reducing the resolution of the display device or the aperture ratio of each sub-pixel. It is possible.

[0362] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0363] (Embodiment 3) In this embodiment, it can be used in the OS transistor described in the above embodiment. This section explains metal oxides (also known as oxide semiconductors).

[0364] The metal oxide preferably contains at least indium or zinc. In particular, indium It is preferable to include aluminum and zinc. In addition to these, aluminum, gallium, and zinc are also preferable. It is preferable that it contains tetium, tin, etc. Also, boron, silicon, titanium Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neo Selected from materials such as zinc, hafnium, tantalum, tungsten, magnesium, and cobalt. It may contain one or more types.

[0365] Furthermore, metal oxides can be produced by sputtering, metal-organic chemical vapor deposition (MOCVD), and other methods. (e.g., organic chemical vapor deposition) method Chemical vapor deposition (CVD) method, By methods such as Atomic Layer Deposition (ALD) It can be formed.

[0366] <Classification of crystal structures> The crystal structure of oxide semiconductors is amorphous (completely amorphous) (including hous), CAAC (c-axis-aligned crystalline ), nc(nanocrystalline), CAC(cloud-aligned (composite), single crystal, and polycrystalline (pol Examples include (y crystal), etc.

[0367] The crystal structure of the film or substrate can be determined by X-ray diffraction (XRD). It can be evaluated using the ion spectrum. For example, GIXD (Grazing - Evaluation using the XRD spectrum obtained from the Incidence XRD measurement. This can be done. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method. .

[0368] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is almost symmetrical. On the other hand, in IGZO films with a crystalline structure, the shape of the peaks in the XRD spectrum is asymmetrical. It is symmetrical. The asymmetrical shape of the peaks in the XRD spectrum indicates that it is present in the membrane or base. This clearly indicates the presence of crystals within the plate. In other words, the shape of the peaks in the XRD spectrum is left and right. If a film or substrate is not symmetrical, it cannot be said to be in an amorphous state.

[0369] Furthermore, the crystal structure of the film or substrate is determined by nano-beam diffraction (NBED). Diffraction patterns observed by electron diffraction (extremely small) It can be evaluated using electron diffraction patterns (also called electron diffraction patterns). For example, the diffraction pattern of a quartz glass substrate. In the folding pattern, a halo is observed, confirming that the quartz glass is in an amorphous state. Furthermore, the diffraction pattern of the IGZO film deposited at room temperature showed spot-like patterns rather than halos. Turns are observed. Therefore, the IGZO film deposited at room temperature is neither crystalline nor amorphous. It is presumed that this is an intermediate state, not a state, and therefore cannot be concluded to be an amorphous state. ru.

[0370] <<Oxide semiconductor structure>> Note that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. They can be divided into: Non-single-crystal oxide semiconductors include, for example, the aforementioned CAAC-OS and n c-OS exists. Furthermore, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo-amorphous oxides. Amorphous-like oxide semiconductor (a-like OS) This includes semiconductors such as iconductors and amorphous oxide semiconductors.

[0371] Here, we will provide details on the CAAC-OS, nc-OS, and a-like OS mentioned above. Then, I will give an explanation.

[0372] [CAAC-OS] CAAC-OS has multiple crystalline regions, and the c-axis of these crystalline regions is oriented in a specific direction. It is an oriented oxide semiconductor. The specific direction refers to the thickness direction of the CAAC-OS film. , in the direction normal to the surface on which the CAAC-OS film is formed, or in the direction normal to the surface of the CAAC-OS film Yes, there is. Furthermore, a crystalline region is a region in which the atomic arrangement has periodicity. Note that the atomic arrangement is categorized If considered as a child arrangement, a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC- OS has a region in which multiple crystal regions are connected in the ab-plane direction, and this region is strained It may have strain. Note that strain refers to the lattice arrangement in a region where multiple crystal regions are connected. The orientation of the grid arrangement changes between a region with aligned grids and another region with aligned grids. This refers to the location. In other words, CAAC-OS is c-axis oriented and has a clear orientation in the ab-plane direction. It is an oxide semiconductor that does not exist.

[0373] Each of the above multiple crystalline regions is composed of one or more minute crystals (with a maximum diameter of 10 It is composed of crystals smaller than nm. Furthermore, the maximum diameter of the crystalline region is less than 10 nm. If this occurs, the size of the crystalline region may be around several tens of nanometers.

[0374] Also, In-M-Zn oxide (element M is aluminum, gallium, yttrium, sulfite) In one or more types selected from materials such as titanium, CAAC-OS is an indicator. A layer containing um (In) and oxygen (hereinafter referred to as the In layer), and element M, zinc (Zn), and acid A layered crystalline structure (also called a layered structure) is formed by stacking layers containing an element (hereinafter referred to as (M,Zn) layer). It tends to have (u). Furthermore, indium and element M are mutually substitutable. Therefore The (M,Zn) layer may contain indium. Also, the In layer contains element M. This may occur. Furthermore, the In layer may also contain Zn. This layered structure is, for example, , high-resolution TEM (Transmission Electron Microscop) e) In the image, it is observed as a grid pattern.

[0375] For example, when structural analysis of a CAAC-OS film is performed using an XRD device, the θ / 2θ scale is obtained. Out-of-plane XRD measurements using the CANR showed two peaks indicating c-axis orientation. It is detected at θ=31° or nearby. Note that the position of the peak indicating c-axis orientation (value of 2θ) ) may vary depending on the type and composition of the metal elements that make up CAAC-OS.

[0376] Furthermore, for example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots (spots) (T) is observed. Note that one spot and another spot are separated by the incident electron beam that has passed through the sample. Observations are made at point-symmetric positions with respect to the spot (also called the direct spot) as the center of symmetry. ru.

[0377] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is a hexagonal lattice. While this is the basic principle, the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. Also, The above distortion may have a grid arrangement such as a pentagon or heptagon. -In OS, clear grain boundaries were confirmed even near the strain. This is not possible. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This indicates that CAAC-OS has a dense arrangement of oxygen atoms in the ab-plane direction. This is because, for example, the substitution of metal atoms changes the bond distance between atoms. This is thought to be because it allows for distortion to be tolerated.

[0378] Furthermore, a crystal structure in which clear grain boundaries can be observed is known as a polycrystalline structure. It is called al(al). The grain boundaries become recombination centers, trapping carriers and forming transistors. This is likely to cause a decrease in on-current and a decrease in field-effect mobility. CAAC-OS, which lacks visible grain boundaries, has a crystal structure suitable for the semiconductor layer of transistors. It is one of the crystalline oxides that possesses Zn. Furthermore, CAAC-OS requires the presence of Zn. A configuration in which In-Zn oxide and In-Ga-Zn oxide are made of In acid It is preferable because it can suppress the generation of grain boundaries more effectively than oxidized materials.

[0379] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less prone to a decrease in electron mobility caused by grain boundaries. Furthermore, the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities, the formation of defects, etc. Because of this, CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen vacancies). It can also be said that oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are highly heat-resistant and reliable. AC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Yes. Therefore, using CAAC-OS in OS transistors expands the degree of freedom in the manufacturing process. This becomes possible.

[0380] [nc-OS] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. In other words, nc-OS is micro It has small crystals. The size of these minute crystals is, for example, between 1 nm and 10 nm. In particular, because they are between 1 nm and 3 nm in size, these minute crystals are also called nanocrystals. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, the entire film... No orientation is observed. Therefore, depending on the analytical method, nc-OS is a-like O It can sometimes be indistinguishable from S or amorphous oxide semiconductors. For example, when comparing nc-OS films Furthermore, when performing structural analysis using an XRD device, out-of-p In lane XRD measurements, no peaks indicating crystallinity were detected. Furthermore, in the nc-OS film... In contrast, electron beams with probe diameters larger than nanocrystals (e.g., 50 nm or larger) are used. When diffraction (also called limited-field electron diffraction) is performed, a diffraction pattern similar to a halo pattern is produced. This is observed. On the other hand, for nc-OS films, the size is close to or smaller than that of nanocrystals. Electron diffraction (nanobial diffraction) using an electron beam with a probe diameter (e.g., 1 nm to 30 nm) Also called electron diffraction. When this is performed, within a ring-shaped region centered on the direct spot... In some cases, an electron diffraction pattern with multiple spots observed may be obtained.

[0381] [a-like OS] a-like OS is an oxide having a structure between nc-OS and amorphous oxide semiconductors. It is a semiconductor. an a-like OS has porous or low-density regions. That is, a-lik e OS has lower crystallinity compared to nc-OS and CAAC-OS. e OS has a higher hydrogen concentration in the membrane compared to nc-OS and CAAC-OS.

[0382] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS is a material composition. Regarding achievement.

[0383] [CAC-OS] CAC-OS refers to, for example, metal oxides in which the elements constituting the metal oxide are between 0.5 nm and 10 nm. Below, preferably, a structure of material that is unevenly distributed with a size of 1 nm to 3 nm or close to that size. It is formed. Furthermore, in the following, in metal oxides, one or more metal elements are unevenly distributed. The region containing the metal element is 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A mixture of particles smaller than or near a m in size is also called a mosaic or patchy appearance. .

[0384] Furthermore, CAC-OS is a material that separates into a first region and a second region. This results in a zigzag-like structure, where the first region is distributed within the film (hereinafter also referred to as a cloud-like structure). ) In other words, CAC-OS is a mixture of the first region and the second region. It is a composite metal oxide having the following composition.

[0385] Here, I for the metal elements constituting CAC-OS in In-Ga-Zn oxide The atomic ratios of n, Ga, and Zn are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in In-Ga-Zn oxide, the first region is This is the region where [In] is greater than the [In] in the composition of the CAC-OS film. Region 2 is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Or, for example, in the first region, [In] is greater than [In] in the second region. Furthermore, it is a region where [Ga] is smaller than [Ga] in the second region. The second region is one in which [Ga] is greater than [Ga] in the first region, and [In] However, this region is smaller than [In] in the first region.

[0386] Specifically, the first region mentioned above mainly consists of indium oxide, indium zinc oxide, etc. This is a region of minutes. Furthermore, the second region mentioned above is gallium oxide, gallium zinc oxide, etc. This is the region in which In is the main component. In other words, the first region described above can be said to be the region in which In is the main component. It can be replaced. Furthermore, the second region described above can be rephrased as the region with Ga as the main component. It is possible.

[0387] Note that a clear boundary may not be observed between the first region and the second region described above. .

[0388] Furthermore, CAC-OS in In-Ga-Zn oxide refers to In, Ga, Zn, and O In a material composition including, a region in which Ga is the main component and a region in which In is the main component The regions are each mosaic-like, and these regions exist randomly in this configuration. Therefore, it is presumed that CAC-OS has a structure in which metallic elements are unevenly distributed. ru.

[0389] CAC-OS is a material that can be molded by sputtering, for example, under conditions where the substrate is not intentionally heated. This can be achieved. Also, when forming CAC-OS by sputtering, the deposition gas The gases selected were inert gases (typically argon), oxygen gas, and nitrogen gas. You may use one or more of them. Also, the oxygen in relation to the total flow rate of the deposition gas during film formation. A lower gas flow rate ratio is preferable, for example, the ratio of oxygen gas flow rate to the total flow rate of the deposition gas during film formation. The flow rate ratio is preferably 0% or more and less than 30%, more preferably 0% or more and 10% or less.

[0390] Furthermore, for example, in CAC-OS in In-Ga-Zn oxide, energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectrometry) EDX mapping obtained using oscopy revealed a region with In as its main component (the third A structure in which region 1 and region 2, which is mainly composed of Ga, are unevenly distributed and mixed. It can be confirmed that it possesses [this characteristic].

[0391] Here, the first region is a region with higher conductivity compared to the second region. In other words, the first region In region 1, the flow of carriers causes the metal oxide to exhibit conductivity. Therefore, Therefore, the first region is distributed in a cloud-like manner within the metal oxide, resulting in high field-effect mobility. μ) can be achieved.

[0392] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the second region The distribution of this region within the metal oxide can suppress leakage current.

[0393] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and, The insulating properties resulting from the second region work complementaryly to the switching mechanism. The ability (the function to turn it on / off) can be added to CAC-OS. In other words, CAC -OS refers to a material that has conductive properties in some parts and insulating properties in other parts. The material as a whole possesses semiconductor properties. It separates the conductive and insulating functions. This allows us to maximize the functionality of both. Therefore, CAC-OS is transition By using it in the terminal, a high on-current (I on ), high field effect mobility (μ), and good performance It can perform a twisting motion.

[0394] Furthermore, transistors using CAC-OS are highly reliable. Therefore, CAC-OS is It is ideal for various semiconductor devices, including display devices.

[0395] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and C It may have two or more of the following: AC-OS, nc-OS, and CAAC-OS.

[0396] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0397] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility is obtained. This can be achieved. Furthermore, highly reliable transistors can be realized.

[0398] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. The carrier concentration of oxide semiconductors is 1 × 10⁻⁶ 17 cm -3 The following is preferably 1 × 10 15 c m -3 More preferably 1 × 10 13 cm -3 More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm - 3 That concludes the explanation. Furthermore, when lowering the carrier concentration of the oxide semiconductor film, the oxide... The impurity concentration in the semiconductor film can be reduced to lower the defect level density. High-purity intrinsic or substantially high-purity intrinsic refers to a substance with a low impurity concentration and a low defect level density. Furthermore, oxide semiconductors with low carrier concentrations are considered to be of high purity intrinsic or substantially high purity intrinsic. It is sometimes called an oxide semiconductor.

[0399] Furthermore, oxide semiconductor films that are high-purity intrinsic or substantially high-purity intrinsic have a defect level density of Because the level is low, the trap level density may also be low.

[0400] Furthermore, the time required for charges trapped in the trap levels of an oxide semiconductor to disappear is... It can behave for a long time, almost like a fixed charge. Therefore, the trap level density is high. Transistors in which a channel formation region is formed in an oxide semiconductor have unstable electrical properties. There are cases where this occurs.

[0401] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor is Reducing it is effective. Furthermore, in order to reduce the impurity concentration in oxide semiconductors, It is also preferable to reduce the concentration of impurities in the adjacent membrane. Examples of impurities include hydrogen, nitrogen, and Examples include potassium metals, alkaline earth metals, iron, nickel, and silicon.

[0402] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0403] In oxide semiconductors, if silicon or carbon, which are among the Group 14 elements, Defect levels are formed in oxide semiconductors. Therefore, silicon in oxide semiconductors Or the concentration of carbon and the concentration of silicon or carbon near the interface with the oxide semiconductor (secondary ions) Secondary Ion Mass Spectrometry (SIMS) The concentration obtained by the trial is 2 × 10 18 atoms / cm 3 The following are preferably 2 ×10 17 atoms / cm 3 The following applies:

[0404] Furthermore, if an alkali metal or alkaline earth metal is present in the oxide semiconductor, the defect levels will be They may form and generate carriers. Therefore, alkali metals or alkaline earth metals Transistors using oxide semiconductors containing this material tend to exhibit normally-on characteristics. Therefore, alkali metals or alkaline earth metals in oxide semiconductors obtained by SIMS The concentration of the genus is 1 × 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0405] Furthermore, in oxide semiconductors, when nitrogen is present, electrons, which are carriers, are generated. As the nitrogen concentration increases, it becomes easier to convert to n-type semiconductors. As a result, oxide semiconductors containing nitrogen become semiconductors. The transistor used tends to exhibit normally-on characteristics. Alternatively, oxide semiconductors Furthermore, when nitrogen is present, trap levels may be formed. As a result, transistor The electrical properties of the oxide semiconductor obtained by SIMS may become unstable. The nitrogen concentration inside is 5 × 10 19 atoms / cm 3 Less than 5 × 10 18 ato ms / cm 3 More preferably 1 × 10 18 atoms / cm 3 The following are even more preferable kuha 5×10 17 atoms / cm 3 Do the following:

[0406] Furthermore, the hydrogen contained in oxide semiconductors reacts with the oxygen bonded to the metal atoms to form water. Therefore, an oxygen deficiency may form. When hydrogen enters this oxygen deficiency, the carrier electrons In some cases, a child may be produced. Also, some of the hydrogen combines with the metal atom and oxygen, resulting in a crystal. It can generate electrons that act as carriers. Therefore, an oxide semiconductor containing hydrogen is used. Transistors with this characteristic tend to exhibit normally-on properties. Therefore, hydrogen in oxide semiconductors It is preferable that the SI is reduced as much as possible. Specifically, in oxide semiconductors, The hydrogen concentration obtained by MS is 1 × 10 20 atoms / cm 3 Less than 1x 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 less than More preferably 1 × 10 18 atoms / cm 3 Make it less than.

[0407] Using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor. This allows for the provision of stable electrical characteristics.

[0408] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0409] (Embodiment 4) In this embodiment, an electronic device according to one aspect of the present invention will be described using Figures 30 to 32. do.

[0410] The electronic device of this embodiment has a display device according to one aspect of the present invention. For example, the electronic device A display device according to one embodiment of the present invention can be applied to the display unit. The device has a light detection function, allowing for biometric authentication via the display unit and touch operation (contact). It can detect (or approach) objects, etc. This improves the functionality and convenience of electronic devices. It can improve [something].

[0411] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Computer monitors, digital signage, and pachinko machines. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, and Digital video cameras, digital photo frames, mobile phones, portable game consoles, mobile information Examples include terminals and audio playback devices.

[0412] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotational speed). Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, (Includes functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It's okay to do so.

[0413] The electronic device of this embodiment can have various functions. For example, various information ( Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar A function to display the date or time, and to run various software (programs). Functions include wireless communication and the ability to read programs or data recorded on a recording medium. They may possess abilities such as [specific abilities / abilities].

[0414] The electronic device 6500 shown in Figure 30A is a portable device that can be used as a smartphone. It is a news terminal device.

[0415] The electronic device 6500 consists of a housing 6501, a display unit 6502, a power button 6503, and a button 6 It includes 504, speaker 6505, microphone 6506, camera 6507, and light source 6508, etc. The display unit 6502 is equipped with a touch panel function.

[0416] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0417] Figure 30B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0418] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and the housing 650 Within the space surrounded by 1 and protective member 6510, display panel 6511, optical member 6512, The touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are located here. ru.

[0419] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. Nel 6513 is fixed by an adhesive layer (not shown).

[0420] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back. The FPC6515 is connected to the folded portion. IC6516 is mounted. FPC6515 is located on printed circuit board 6517. It is connected to the terminal.

[0421] A flexible display according to one aspect of the present invention can be applied to the display panel 6511. Yes, it is possible. Therefore, it is possible to realize extremely lightweight electronic devices. Also, the display panel 6511 is extremely Because it is extremely thin, it can accommodate a large-capacity 6518 battery while keeping the thickness of electronic devices down. Yes, it is possible. Also, by folding back a part of the display panel 6511, the FPC6515 can be placed on the back of the pixel area. By positioning the connection point, it is possible to realize electronic devices with narrow bezels.

[0422] By using a display device according to one aspect of the present invention on the display panel 6511, the display unit 6502 can It can capture images. For example, a fingerprint can be captured on the display panel 6511 and fingerprint authentication can be performed. It is possible.

[0423] The display unit 6502 further includes a touch sensor panel 6513, so the display unit 65 A touch panel function can be added to 02. As a touch sensor panel 6513 These include capacitive, resistive, surface acoustic wave, infrared, optical, and pressure-sensitive methods. Various methods can be used. Alternatively, the display panel 6511 can be used as a touch sensor. It may be made functional, in which case the touch sensor panel 6513 does not need to be provided.

[0424] Figure 31A shows an example of a television system. The television system 7100 has a housing 710 A display unit 7000 is incorporated into 1. Here, the stand 7103 connects to the housing 710. This shows the configuration that supports option 1.

[0425] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0426] The television device 7100 shown in Figure 31A is operated by the operation switches provided on the housing 7101. This can be done by the 70 or a separate remote control unit 7111. Alternatively, the display unit 70 00 may be equipped with a touch sensor, and by touching the display unit 7000 with a finger, etc., the TV will The control device 7100 may be operated. The remote control operator 7111 is the remote control operator 7 It may have a display unit that displays information output from 111. Remote control operator 7111 The control keys or touch panel on the device allow you to operate the channel and volume. Furthermore, the image displayed on the display unit 7000 can be operated.

[0427] The television system 7100 will consist of a receiver and a modem, etc. The device can receive regular television broadcasts. It can also receive broadcasts via a modem via wired or By connecting to a wireless communication network, one-way communication (from sender to receiver) or It is also possible to communicate information in two directions (between a sender and receiver, or between receivers). be.

[0428] Figure 31B shows an example of a notebook personal computer. The Pewter 7200 consists of a casing 7211, a keyboard 7212, and a pointing device 72 13. It has external connection ports 7214, etc. The display unit 7000 is incorporated into the housing 7211. It is being done.

[0429] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0430] Figures 31C and 31D show examples of digital signage.

[0431] The digital signage 7300 shown in Figure 31C consists of a housing 7301, a display unit 7000, and It has a speaker 7303, etc. Furthermore, it has an LED lamp, operation keys (power switch, or It may include an operating switch, connection terminals, various sensors, a microphone, etc. .

[0432] Figure 31D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is installed along the curved surface of the column 7401. To possess.

[0433] In Figures 31C and 31D, a display device according to one embodiment of the present invention is applied to the display unit 7000. It is possible.

[0434] The larger the display area 7000, the more information can be provided at once. The wider the display area 7000, the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. can.

[0435] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It's desirable that it not only displays information but also allows users to operate it intuitively. Furthermore, route information... When used for purposes such as providing news or traffic information, intuitive operation is required. This can improve usability.

[0436] Furthermore, as shown in Figures 31C and 31D, the Digital Signage 7300 or Digital Signage 7400 is an information terminal 7311 such as a smartphone owned by the user. It is preferable that it can communicate with the information terminal 7411 via wireless communication. For example, the display unit Information about the advertisement displayed on 7000 is shown on the image of information terminal 7311 or information terminal 7411. It can be displayed on the surface. Also, information terminal 7311 or information terminal 7411 can be operated. By doing so, the display on the 7000 display unit can be switched.

[0437] Additionally, information terminals can be connected to the Digital Signage 7300 or Digital Signage 7400. A game is played using the screen of the 7311 or information terminal 7411 as the control device (controller). It can also be done. This allows a large number of users to participate in the game simultaneously and enjoy It is possible to do so.

[0438] The electronic equipment shown in Figures 32A to 32F consists of a housing 9000, a display unit 9001, and a speaker 90. 03. Operation key 9005 (including power switch or operation switch), connection terminal 900 6. Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, Magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity (Including functions for measuring degrees, incline, vibration, odor, or infrared radiation), Microphone 90 It has 08, etc.

[0439] The electronic devices shown in Figures 32A to 32F have various functions. For example, they can display various information (static Functions to display still images, videos, text images, etc. on the display unit, touch panel function, calendar - Functions that display the date or time, etc., processed by various software (programs) Functions to control the system, wireless communication functions, programs or data recorded on the recording medium. It may have functions such as reading and processing data. However, the functions of electronic devices are not limited to these. It is not limited to having multiple displays, and can have various functions. Furthermore, cameras and other devices are installed in electronic equipment to capture still images, videos, etc., and record them on a recording medium (external or It has functions such as saving to the camera (built into the camera), and displaying the captured image on the display unit. That's fine.

[0440] The details of the electronic equipment shown in Figures 32A to 32F will be explained below.

[0441] Figure 32A is a perspective view showing the personal digital assistant 9101. The personal digital assistant 9101 is, for example, For example, it can be used as a smartphone. Note that the mobile information terminal 9101 is a speed A connector (9003), connection terminal (9006), sensor (9007), etc. may be provided. Also, a portable information terminal may be provided. The 9101 can display text, image information, etc., on its multiple surfaces. In Figure 32A, This shows an example displaying three icons 9050. Also, information 905 is shown by a dashed rectangle. 1 can also be displayed on other sides of the display unit 9001. An example of information 9051 is: Notifications for incoming emails, SNS messages, phone calls, etc., subject lines and sender names for emails, SNS messages, etc. This includes the date and time, battery level, and antenna signal strength. Alternatively, information 9051 is You may also display icons such as icon 9050 in the shown location.

[0442] Figure 32B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 is a table The display unit 9001 has the function of displaying information on three or more sides. Here, information 9052, information This shows an example where information 9053 and information 9054 are displayed on different sides. For example, user This is with the personal digital assistant 9102 stored in the breast pocket of the clothing, and the personal digital assistant 9102 Information 9053, displayed in a position that can be observed from above, can also be viewed by the user. This allows you to check the display without taking the personal digital assistant 9102 out of your pocket, for example, to make a phone call. You can decide whether or not to accept it.

[0443] Figure 32C is a perspective view showing a wristwatch-type portable information terminal 9200. Also, the display unit 90 01 has a curved display surface, and can display information along the curved surface. Furthermore, the portable information terminal 9200 can communicate with, for example, a wireless headset. This also allows for hands-free calling. Furthermore, the 9200 mobile information terminal is connected The connection terminal 9006 allows for mutual data transmission with other information terminals and for charging. Yes, it is possible. Furthermore, charging can be performed via wireless power transfer.

[0444] Figures 32D to 32F are perspective views showing a foldable portable information terminal 9201. Figure 32D shows the mobile information terminal 9201 in its unfolded state, Figure 32F shows it in its folded state, and Figure 3 Figure 2E is a perspective view showing the intermediate state of transition from one of Figures 32D and 32F to the other. The 9201 information terminal offers excellent portability when folded and a seamless, wide design when unfolded. The display area provides excellent readability. The display unit 9001 of the portable information terminal 9201 It is supported by three housings 9000 connected by hinges 9055. For example, The display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0445] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination. [Explanation of symbols]

[0446] SA: Light-emitting element: Tr1~Tr2: Transistor: SW1~SW4: Switch: CS1 ~CS2:Capacitance:SL:Wiring:WX:Wiring:AL:Wiring:CL:Wiring:VCP:Wiring:V PI:Wiring:VL1:Wiring:SR:Light-emitting element:ELG:Light-emitting element:ELB:Light-emitting element: M1~M3: Transistors: M10~M14: Transistors: C1~C2: Capacitance: GL: Wiring:TX: Wiring:SE: Wiring:RS: Wiring:REN: Wiring:SL1~SL3: Wiring:V 0L:Wiring:10:Display device:11:Display unit:12:Drive circuit unit:13:Drive circuit unit:1 4: Drive circuit section: 15: Circuit section: 20B: Sub-pixel: 20G: Sub-pixel: 20R: Sub-pixel: 2 1B:Circuit:21G:Circuit:21R:Circuit:22:Circuit:30:Pixel:30B:Pixel:3 0G: pixels

Claims

[Claim 1] It comprises first to third switches, a first transistor, a second transistor, a capacitor, a first wiring, a second wiring, and a light-emitting / receiving element. The first switch has one electrode electrically connected to the first wiring, and the other electrode electrically connected to the gate of the first transistor and one electrode of the capacitor. The second switch has one electrode electrically connected to one of the source and drain of the first transistor, one electrode of the light-emitting / receiving element, and the other electrode of the capacitor, and the other electrode electrically connected to the gate of the second transistor and one electrode of the third switch. The third switch is configured such that the other electrode is electrically connected to the second wiring. The light-receiving element has the function of emitting light of a first color and the function of receiving light of a second color. Display device.

Images