Diode device

Abstract

To provide a diode device that can improve its characteristics. [Solution] According to the embodiment, the diode device includes first and second terminals, a transistor element, a control circuit, and a voltage generation circuit. The transistor element includes a source electrode, a drain electrode, and a gate electrode. The source electrode is electrically connected to the first terminal. The drain electrode is electrically connected to the second terminal. The control circuit includes first and second control input sections, a control output section, and a control power input section. The first control input section is electrically connected to the first terminal. The second control input section is electrically connected to the second terminal. The control output section is electrically connected to the gate electrode. The voltage generation circuit includes first and second voltage input sections and a voltage output section. The first voltage input section is electrically connected to the first terminal. The second voltage input section is electrically connected to the second terminal. The voltage output section is electrically connected to the control power input section.

Description

Technical Field

[0001] Embodiments of the present invention relate to a diode device.

Background Art

[0002] For example, in a diode device, improvement in characteristics is desired.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a diode device capable of improving characteristics.

Means for Solving the Problems

[0005] According to an embodiment of the present invention, a diode device includes a first terminal, a second terminal, a transistor element, a control circuit, and a voltage generation circuit. The transistor element includes a source electrode, a drain electrode, and a gate electrode. The source electrode is electrically connected to the first terminal. The drain electrode is electrically connected to the second terminal. The control circuit includes a first control input section, a second control input section, a control output section, and a control power input section. The first control input section is electrically connected to the first terminal. The second control input section is electrically connected to the second terminal. The control output section is electrically connected to the gate electrode. The voltage generation circuit includes a first voltage input section, a second voltage input section, and a voltage output section. The first voltage input section is electrically connected to the first terminal. The second voltage input section is electrically connected to the second terminal. The voltage output section is electrically connected to the control power input section.

Brief Description of the Drawings

[0006] [Figure 1] Figure 1 is a schematic diagram illustrating a diode device according to the first embodiment. [Figure 2] Figure 2 is a schematic diagram illustrating the characteristics of a diode device according to the first embodiment. [Figure 3] Figure 3 is a schematic diagram illustrating a part of the diode device according to the first embodiment. [Figure 4] Figure 4 is a schematic diagram illustrating a part of the diode device according to the first embodiment. [Figure 5] Figure 5 is a schematic cross-sectional view illustrating a part of a diode device according to the first embodiment. [Figure 6] Figure 6 is a schematic perspective view illustrating a part of the diode device according to the first embodiment. [Figure 7] Figure 7 is a schematic cross-sectional view illustrating a part of the diode device according to the first embodiment. [Figure 8] Figures 8(a) to 8(c) are schematic diagrams illustrating an electrical circuit according to the second embodiment. [Figure 9] Figure 9 is a schematic diagram illustrating an electrical circuit according to the second embodiment. [Modes for carrying out the invention]

[0007] Embodiments of the present invention will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may be depicted differently in different drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.

[0008] (First Embodiment) Figure 1 is a schematic diagram illustrating a diode device according to the first embodiment. As shown in Figure 1, the diode device 110 according to this embodiment includes a first terminal T1, a second terminal T2, a transistor element 50, a control circuit 60, and a voltage generation circuit 80.

[0009] The transistor element 50 includes a source electrode 52, a drain electrode 51, and a gate electrode 53. The source electrode 52 is electrically connected to a first terminal T1. The drain electrode 51 is electrically connected to a second terminal T2.

[0010] The control circuit 60 includes a first control input section 60a, a second control input section 60b, a control output section 60c, and a control power supply input section 60d. The first control input section 60a is electrically connected to the first terminal T1. The second control input section 60b is electrically connected to the second terminal T2. The control output section 60c is electrically connected to the gate electrode 53.

[0011] The voltage generation circuit 80 includes a first voltage input section 80a, a second voltage input section 80b, and a voltage output section 80c. The first voltage input section 80a is electrically connected to the first terminal T1. The second voltage input section 80b is electrically connected to the second terminal T2. The voltage output section 80c is electrically connected to the control power input section 60d.

[0012] In the diode device 110, the first terminal T1 is, for example, the anode terminal. The second terminal T2 is, for example, the cathode terminal. The diode device 110 is a two-terminal device. The number of terminals is two. It is not necessary to provide any other terminals besides these two. In the embodiment, a diode device 110 with a simple configuration can be obtained.

[0013] Figure 2 is a schematic diagram illustrating the characteristics of a diode device according to the first embodiment. The horizontal axis in Figure 2 represents the voltage V1 between the first terminal T1 and the second terminal T2. The vertical axis represents the current I1 flowing between the first terminal T1 and the second terminal T2. As shown in Figure 2, in the diode device 110, for example, the forward voltage VF is substantially zero. This suppresses losses. According to the embodiment, a diode device with improved characteristics can be obtained with a simple configuration.

[0014] In the diode device 110, for example, it may be applied to synchronous rectification. Even in such an application, the circuit does not become complex. Losses during light load are suppressed.

[0015] In the embodiment, in a state where a reverse voltage is applied between the first terminal T1 and the second terminal T2, a constant voltage is generated by the voltage generation circuit 80. As will be described later, for example, the voltage generation circuit 80 includes a capacitor. The control circuit 60 is driven by the charge stored in the capacitor in a state where a reverse voltage is applied. The control circuit 60 controls the transistor element 50. For example, when the charge stored in the capacitor is consumed, a rectification operation is performed by the body diode of the transistor element 50.

[0016] Thus, the control circuit 60 is configured to control the gate potential of the gate electrode 53 based on the result of comparing the first potential of the first terminal T1 and the second potential of the second terminal T2.

[0017] The voltage generation circuit 80 is configured to output a substantially constant voltage based on the voltage between the first terminal T1 and the second terminal T2.

[0018] Hereinafter, one example regarding the configuration of the voltage generation circuit 80 will be described. FIG. 3 is a schematic diagram illustrating a part of the diode device according to the first embodiment. As shown in FIG. 3, in this example, the voltage generation circuit 80 includes a first voltage generation diode 85a, a first voltage generation transistor 81T, and a first capacitor 86.

[0019] The anode (first voltage generation anode) of the first voltage generation diode 85a is electrically connected to the second terminal T2. The cathode (first voltage generation cathode) of the first voltage generation diode 85a is electrically connected to the first voltage generation drain 81D of the first voltage generation transistor 81T. The first voltage generation source 81S of the first voltage generation transistor 81T is electrically connected to the first capacitor terminal 86a and the voltage output section 80c of the first capacitor 86.

[0020] The other end 86b of the first capacitor 86 and the first voltage generating gate 81G of the first voltage generating transistor 81T are electrically connected to the first terminal T1.

[0021] For example, the first voltage generating transistor 81T is a depletion-mode MOS transistor. The threshold voltage at the first voltage generating transistor 81T is negative. The threshold voltage can be, for example, around -2V. For example, when the potential of the first voltage generating source 81S rises to the threshold voltage, the first voltage generating transistor 81T turns off. The circuit illustrated in Figure 3 enables the operation described in Figure 1.

[0022] As shown in Figure 3, the voltage generation circuit 80 may further include a second voltage generation diode 85b. The anode (second voltage generation anode) of the second voltage generation diode 85b is electrically connected to the first terminal T1. The cathode (second voltage generation cathode) of the second voltage generation diode 85b is electrically connected to the voltage output section 80c. The second voltage generation diode 85b functions, for example, as a reverse current suppression diode. The second voltage generation diode 85b may be a Zener diode.

[0023] In this embodiment, the voltage generation circuit 80 can be configured in any way that allows it to output a substantially constant voltage based on the voltage between the first terminal T1 and the second terminal T2.

[0024] The following describes one example of the configuration of the control circuit 60. Figure 4 is a schematic diagram illustrating a part of the diode device according to the first embodiment. As shown in Figure 4, in this example, the control circuit 60 includes a comparator circuit 60C. The comparator circuit 60C is configured to output a signal Sg1 based on the difference between the first potential of the first terminal T1 and the second potential of the second terminal T2.

[0025] The comparison circuit 60C may include, for example, a current mirror circuit 67 and a differential circuit pair 68.

[0026] In this example, the control circuit 60 further includes a buffer circuit 60B. The buffer circuit 60B is provided between the comparator circuit 60C and the control output unit 60c.

[0027] The comparator circuit 60C may include one or more nMOS transistors 60n. The buffer circuit 60B may include one or more nMOS transistors 60n.

[0028] In the example shown in Figure 4, the control circuit 60 includes a first transistor 61, a second transistor 62, a third transistor 63, and a fourth transistor 64.

[0029] The first end 61a of the first transistor 61 and the second end 62a of the second transistor 62 are electrically connected to the first terminal T1. The first other end 61b of the first transistor 61 is electrically connected to the third end 63a of the third transistor 63. The second other end 62b of the second transistor 62 is electrically connected to the fourth end 64a of the fourth transistor 64.

[0030] The third other end 63b of the third transistor 63 and the fourth other end 64b of the fourth transistor 64 are electrically connected to the control power input section 60d. As already explained, the control power input section 60d is electrically connected to the voltage output section 80c of the voltage generation circuit 80.

[0031] The first gate 61g of the first transistor 61 and the second gate 62g of the second transistor 62 are electrically connected to the second other end 62b of the second transistor 62. The third gate 63g of the third transistor 63 is electrically connected to the first terminal T1. The fourth gate 64g of the fourth transistor 64 is electrically connected to the second terminal T2.

[0032] For example, a comparator circuit 60C is formed by the first transistor 61, the second transistor 62, the third transistor 63, and the fourth transistor 64.

[0033] At least one of the first transistor 61, the second transistor 62, the third transistor 63, and the fourth transistor 64 may be an nMOS transistor 60n.

[0034] As shown in Figure 4, the control circuit 60 may further include a fifth transistor 65 and a sixth transistor 66. The fifth end 65a of the fifth transistor 65 is electrically connected to the first terminal T1. The fifth other end 65b of the fifth transistor 65 is electrically connected to the control output unit 60c. The sixth end 66a of the sixth transistor 66 is electrically connected to the control output unit 60c. The sixth other end 66b of the sixth transistor 66 is electrically connected to the control power input unit 60d.

[0035] The fifth gate 65g of the fifth transistor 65 is electrically connected to the second other end 62b. The sixth gate 66g of the sixth transistor 66 is electrically connected to the first other end 61b.

[0036] The fifth transistor 65 and the sixth transistor 66 form, for example, a buffer circuit 60B. At least one of the fifth transistor 65 and the sixth transistor 66 may be an nMOS transistor 60n.

[0037] In this embodiment, the control circuit 60 can be configured to output any signal Sg1 based on the difference between the first potential of the first terminal T1 and the second potential of the second terminal T2.

[0038] The following describes one example of the configuration of the transistor element 50. Figure 5 is a schematic cross-sectional view illustrating a part of a diode device according to the first embodiment. As shown in Figure 5, in this example, the transistor element 50 further includes a semiconductor member 10M, a metal member 55, and a first insulating member 41.

[0039] The semiconductor component 10M is located between the drain electrode 51 and the source electrode 52 in a first direction D1 from the drain electrode 51 to the source electrode 52.

[0040] The first direction D1 is defined as the Y-axis direction. One direction perpendicular to the Y-axis direction is defined as the X-axis direction. The direction perpendicular to both the Y-axis and X-axis directions is defined as the Z-axis direction.

[0041] The source electrode 52 includes a first electrode portion 52a and a second electrode portion 52b. The second electrode portion 52b is electrically connected to the first electrode portion 52a.

[0042] The semiconductor member 10M includes a first semiconductor region 11 of a first conductivity type. The first semiconductor region 11 includes a first partial region 11a, a second partial region 11b, and a third partial region 11c. The gate electrode 53 is located between the drain electrode 51 and the first electrode portion 52a in the first direction D1.

[0043] The direction from the second subregion 11b to the second electrode portion 52b is along the first direction D1. The third subregion 11c is located between the gate electrode 53 and the second electrode portion 52b in the second direction D2, which intersects the first direction D1. The second direction D2 may be, for example, the X-axis direction.

[0044] The metal member 55 includes a first metal portion 55a. In the second direction D2, the first metal portion 55a is located between the gate electrode 53 and the second electrode portion 52b. The first metal portion 55a forms a Schottky contact with the first semiconductor region 11 (for example, the third subregion 11c).

[0045] At least a portion of the first insulating member 41 is located between the gate electrode 53 and the semiconductor member 10M. The first insulating member 41 electrically insulates the gate electrode 53 from the semiconductor member 10M.

[0046] For example, the current flowing between the source electrode 52 and the drain electrode 51 can be controlled by the potential of the gate electrode 53. For example, the state (e.g., thickness) of the Schottky barrier in the third subregion 11c and the first metallic portion 55a is controlled by the potential of the gate electrode 53. This controls the current. The transistor element 50 is, for example, a Schottky barrier transistor.

[0047] For example, the first metallic portion 55a may include at least one selected from the group consisting of Ti, W, Mo, Ta, Zr, Al, Sn, V, Re, Os, Ir, Pt, Pd, Rh, Ru, Nb, Sr, and Hf. A stable Schottky barrier can be obtained.

[0048] As shown in Figure 5, the metal member 55 may further include a second metal portion 55b. The second metal portion 55b is located between the first partial region 11a and the second electrode portion 52b in the first direction D1. The direction from at least a portion of the gate electrode 53 to the second metal portion 55b is along the second direction D2. The material of the second metal portion 55b may be different from the material of the first metal portion 55a. This allows the forward voltage VF of the body diode to be adjusted.

[0049] In one example, the second work function of the second metal part 55b is lower than the first work function of the first metal part 55a. For example, a small forward voltage VF is easily obtained.

[0050] As shown in Figure 5, the semiconductor member 10M may further include a second semiconductor region 12 of the first conductivity type. The second semiconductor region 12 is located between the first semiconductor region 11 and the source electrode 52. The concentration of the second impurity of the first conductivity type in the second semiconductor region 12 is higher than the concentration of the first impurity of the first conductivity type in the first semiconductor region 11. A low on-resistance is obtained.

[0051] The first conductivity type may be n-type. The first semiconductor region 11 is, for example, an n-type region. The second semiconductor region 12 is, for example, n + This is the region. The semiconductor material 10M may include, for example, silicon or SiC. The semiconductor material 10M may include, for example, a compound semiconductor containing Ga.

[0052] The transistor element 50 may include a first conductive member 56. The first conductive member 56 is electrically connected to the source electrode 52. For example, at a position different from the cross-section in Figure 5, the first conductive member 56 is electrically connected to the source electrode 52 by a connecting member 56L or the like. The position of the first conductive member 56 in the first direction D1 is between the position of the drain electrode 51 in the first direction D1 and the position of the gate electrode 53 in the first direction D1. The first conductive member 56 functions, for example, as a field plate. Local concentration of the electric field is suppressed. High breakdown voltage is easily obtained.

[0053] Figure 6 is a schematic perspective view illustrating a part of the diode device according to the first embodiment. As shown in Figure 6, the diode device 110 may include a substrate 50S. The substrate 50S includes a substrate surface 50F.

[0054] A third direction D3 from the substrate surface 50F to the transistor element 50 intersects the substrate surface 50F. The third direction D3 intersects, for example, a plane containing the first direction D1 and the second direction D2. The gate electrode 53 extends along the third direction D3. The substrate surface 50F of the substrate 50S may be insulating. The region including the substrate surface 50F may contain, for example, silicon oxide.

[0055] As shown in Figure 6, the transistor element 50 may include a drain electrode layer 51L electrically connected to the drain electrode 51. The transistor element 50 may also include a source electrode layer 52L electrically connected to the source electrode 52. The semiconductor member 10M is located between the drain electrode layer 51L and the source electrode layer 52L. These electrode layers intersect with a third direction D3. These electrode layers are, for example, aligned with the XY plane.

[0056] In this example, the drain electrode layer 51L is located between the substrate 50S and the source electrode layer 52L. In this embodiment, the source electrode layer 52L is located between the substrate 50S and the drain electrode layer 51L.

[0057] Figure 7 is a schematic cross-sectional view illustrating a part of the diode device according to the first embodiment. As shown in Figure 7, the transistor element 50 and the control circuit 60 may be mounted on a single substrate 50S. The direction from the substrate surface 50F to the transistor element 50 is along the third direction D3. The direction from the substrate surface 50F to the control circuit 60 is along the third direction D3. The transistor element 50 and the control circuit 60 can be obtained with a simple configuration.

[0058] The transistor element 50 may include a plurality of gate electrodes 53. The plurality of gate electrodes 53 are arranged along the second direction D2. It may include a laminate containing a drain electrode 51, a source electrode 52, a plurality of gate electrodes 53, and a semiconductor member 10M. The transistor element 50 may include a plurality of laminates. The plurality of laminates are arranged along the first direction D1.

[0059] (Second Embodiment) The second embodiment relates to an electrical circuit. The electrical circuit includes the diode device 110 or a variation thereof described with respect to the first embodiment.

[0060] Figures 8(a) to 8(c) are schematic diagrams illustrating an electrical circuit according to the second embodiment. As shown in Figure 8(a), the electrical circuit 201 according to the embodiment is a half-wave rectifier circuit. As shown in Figure 8(b), the electrical circuit 202 according to the embodiment is a half-wave rectifier circuit. As shown in Figure 8(c), the electrical circuit 203 according to the embodiment is a full-wave rectifier circuit. The diode device 110 according to the first embodiment may be used as the diode included in these electrical circuits.

[0061] Figure 9 is a schematic diagram illustrating an electrical circuit according to the second embodiment. As shown in Figure 9, the electrical circuit 204 according to this embodiment includes, for example, a full-wave rectifier circuit 204a and a half-wave rectifier circuit 204b. The diode device 110 according to the first embodiment may be applied to these rectifier circuits. In this example, the electrical circuit 204 includes a switching transformer 204c, a switching semiconductor element 204d, and a control electrical circuit 204e.

[0062] The embodiments may include the following technical ideas. (Technical proposal 1) First terminal and, The second terminal and A transistor element comprising a source electrode, a drain electrode, and a gate electrode, wherein the source electrode is electrically connected to the first terminal and the drain electrode is electrically connected to the second terminal, A control circuit including a first control input section, a second control input section, a control output section, and a control power input section, wherein the first control input section is electrically connected to the first terminal, the second control input section is electrically connected to the second terminal, and the control output section is electrically connected to the gate electrode, and the control circuit is... A voltage generation circuit including a first voltage input section, a second voltage input section, and a voltage output section, wherein the first voltage input section is electrically connected to the first terminal, the second voltage input section is electrically connected to the second terminal, and the voltage output section is electrically connected to the control power input section. A diode device equipped with a diode.

[0063] (Technical proposal 2) The diode device according to Technical Proposal 1, wherein the control circuit is configured to control the gate potential of the gate electrode based on a comparison between the first potential of the first terminal and the second potential of the second terminal.

[0064] (Technical proposal 3) The control circuit includes a comparison circuit, The diode device according to Technical Proposal 2, wherein the comparison circuit is configured to output a signal based on the difference between the first potential and the second potential.

[0065] (Technical proposal 4) The diode device according to Technical Proposal 3, wherein the comparison circuit includes a current mirror circuit and a differential circuit pair.

[0066] (Technical proposal 5) The control circuit includes a buffer circuit, The buffer circuit is a diode device according to Technical Proposal 4, provided between the comparison circuit and the control output section.

[0067] (Technical proposal 6) The comparison circuit is a diode device according to any one of the technical proposals 3 to 5, comprising one or more nMOS transistors.

[0068] (Technical proposal 7) The control circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. The first terminal of the first transistor and the second terminal of the second transistor are electrically connected to the first terminal. The first other end of the first transistor is electrically connected to the third end of the third transistor. The second other end of the second transistor is electrically connected to the fourth end of the fourth transistor. The third other end of the third transistor and the fourth other end of the fourth transistor are electrically connected to the control power input section. The first gate of the first transistor and the second gate of the second transistor are electrically connected to the second other end. The third gate of the third transistor is electrically connected to the first terminal. The diode device according to Technical Proposal 2 or 3, wherein the fourth gate of the fourth transistor is electrically connected to the second terminal.

[0069] (Technical proposal 8) The diode device according to Technical Proposal 7, wherein at least one of the first transistor, the second transistor, the third transistor, and the fourth transistor is an nMOS transistor.

[0070] (Technical proposal 9) The control circuit further includes a fifth transistor and a sixth transistor, The fifth terminal of the fifth transistor is electrically connected to the first terminal. The fifth other end of the fifth transistor is electrically connected to the control output section. The sixth terminal of the sixth transistor is electrically connected to the control output section. The other end of the sixth transistor is electrically connected to the control power input section. The fifth gate of the fifth transistor is electrically connected to the second other end, The diode device according to Technical Proposal 7, wherein the sixth gate of the sixth transistor is electrically connected to the first other end.

[0071] (Technical proposal 10) The diode device according to Technical Proposal 9, wherein at least one of the fifth transistor and the sixth transistor is an nMOS transistor.

[0072] (Technical proposal 11) The diode device according to any one of the technical proposals 1 to 10, wherein the voltage generation circuit is configured to output a constant voltage based on the voltage between the first terminal and the second terminal.

[0073] (Technical proposal 12) The voltage generation circuit includes a first voltage generation diode, a first voltage generation transistor, and a first capacitor. The first voltage generating anode of the first voltage generating diode is electrically connected to the second terminal, The first voltage generating cathode of the first voltage generating diode is electrically connected to the first voltage generating drain of the first voltage generating transistor. The first voltage generation source of the first voltage generation transistor is electrically connected to the first capacitor terminal of the first capacitor and the voltage output section. The other end of the first capacitor and the first voltage generating gate of the first voltage generating transistor are electrically connected to the first terminal. The diode device according to any one of Technical Proposals 1 to 10, wherein the first voltage generating transistor is a depletion-mode MOS transistor.

[0074] (Technical proposal 13) The voltage generation circuit further includes a second voltage generation diode, The second voltage generating anode of the second voltage generating diode is electrically connected to the first terminal. The diode device according to Technical Proposal 12, wherein the second voltage generating cathode of the second voltage generating diode is electrically connected to the voltage output section.

[0075] (Technical proposal 14) The diode device according to Technical Proposal 13, wherein the second voltage generating diode is a Zener diode.

[0076] (Technical proposal 15) The transistor element is a diode device according to any one of the technical proposals 1 to 14, including a Schottky barrier transistor.

[0077] (Technical proposal 16) The transistor element further includes a semiconductor member, a metal member, and a first insulating member. The semiconductor member is located between the drain electrode and the source electrode in a first direction from the drain electrode to the source electrode. The source electrode includes a first electrode portion and a second electrode portion, The semiconductor member includes a first semiconductor region of a first conductivity type, The first semiconductor region includes a first subregion, a second subregion, and a third subregion. The gate electrode is located between the drain electrode and the first electrode portion in the first direction. The direction from the second subregion to the second electrode portion is along the first direction, The third sub-region is located between the gate electrode and the second electrode portion in a second direction intersecting the first direction. The metal member includes a first metal portion, The first metal portion is located between the gate electrode and the second electrode portion in the second direction. The first metal portion forms a Schottky contact with the third subregion. A diode device according to any one of Technical Proposals 1 to 14, wherein at least a portion of the first insulating member is located between the gate electrode and the semiconductor member.

[0078] (Technical proposal 17) The diode device according to proposal 16, wherein the first metal portion includes at least one selected from the group consisting of Ti, W, Mo, Ta, Zr, Al, Sn, V, Re, Os, Ir, Pt, Pd, Rh, Ru, Nb, Sr, and Hf.

[0079] (Technical proposal 18) The aforementioned metal member further includes a second metal portion, The second metal portion is located between the first partial region and the second electrode portion in the first direction. The direction from at least a portion of the gate electrode to the second metal portion is along the second direction, The diode device according to Technical Proposal 16 or 17, wherein the second work function of the second metal part is lower than the first work function of the first metal part.

[0080] (Technical proposal 19) The semiconductor member further includes a second semiconductor region of the first conductivity type, The second semiconductor region is located between the first semiconductor region and the source electrode. The diode device according to any one of the technical proposals 16 to 18, wherein the concentration of the second impurity of the first conductivity type in the second semiconductor region is higher than the concentration of the first impurity of the first conductivity type in the first semiconductor region.

[0081] (Technical proposal 20) The substrate further comprises a substrate surface, The third direction from the substrate surface to the transistor element intersects with the substrate surface, The diode device according to any one of Technical Proposals 1 to 19, wherein the direction from the substrate surface to the control circuit is along the third direction.

[0082] According to the embodiment, a diode device capable of improving characteristics is provided.

[0083] In this specification, "perpendicular" and "parallel" do not mean strictly perpendicular and strictly parallel, but also include variations in the manufacturing process, for example, and it is sufficient if they are substantially perpendicular and substantially parallel.

[0084] Embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configuration of each element such as transistor elements, electrodes, semiconductor materials, and circuits included in a diode device is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known scope to implement the present invention and obtain similar effects.

[0085] Combinations of two or more elements from each example, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0086] All diode devices that a person skilled in the art can implement by appropriately modifying the design based on the diode device described above as an embodiment of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0087] Within the scope of the concept of this invention, a person skilled in the art would be able to conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of this invention.

[0088] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]

[0089] 10M: Semiconductor material, 11, 12: First and second semiconductor regions, 11a~11c: First to third partial regions, 41: First insulating material, 50: Transistor element, 50F: Substrate surface, 50S: Substrate, 51: Drain electrode, 51L: Drain electrode layer, 52: Source electrode, 52L: Source electrode layer, 52a, 52b: First and second electrode portions, 53: Gate electrode, 55: Metal material, 55a, 55b: First and second metal portions, 56: First conductive material, 56L: Connecting material, 60: Control circuit, 60B: Buffer circuit, 60C: Comparator circuit, 60a, 60b: First and second control input sections, 60c: Control output section, 60d: Control power input section, 60n: nMOS transistor 61~66: 1st to 6th transistors, 61a~66a: 1st to 6th terminals, 61b~66b: 1st to 6th other terminals, 61g~66g: 1st to 6th gates, 67: Current mirror circuit, 68: Differential circuit pair, 80: Voltage generation circuit, 80a, 80b: 1st and 2nd voltage input sections, 80c: Voltage output section, 81D: 1st voltage generation drain, 81G: 1st voltage generation gate, 81S: 1st voltage generation source, 81T: 1st voltage generation transistor, 85a, 85b: 1st and 2nd voltage generation diodes, 86: 1st capacitor, 86a: 1st capacitor terminal, 86b: 1st capacitor other terminal, 110: Diode device, 201~204: Electrical circuit, 204a: Full-wave rectifier circuit, 204b: Half-wave rectifier circuit, 204c: Switching transformer, 204d: Switching semiconductor element, 204e: Control electrical circuit, D1~D3: 1st~3rd directions, I1: Current, Sg1: Signal, T1, T2: 1st and 2nd terminals, V1: Voltage, VF: Forward voltage

Claims

1. First terminal and The second terminal and, A transistor element comprising a source electrode, a drain electrode, and a gate electrode, wherein the source electrode is electrically connected to a first terminal and the drain electrode is electrically connected to a second terminal, A control circuit including a first control input section, a second control input section, a control output section, and a control power input section, wherein the first control input section is electrically connected to the first terminal, the second control input section is electrically connected to the second terminal, and the control output section is electrically connected to the gate electrode, and the control circuit is... A voltage generation circuit including a first voltage input section, a second voltage input section, and a voltage output section, wherein the first voltage input section is electrically connected to the first terminal, the second voltage input section is electrically connected to the second terminal, and the voltage output section is electrically connected to the control power input section. A diode device equipped with a diode.

2. The diode device according to claim 1, wherein the control circuit is configured to control the gate potential of the gate electrode based on the result of comparing the first potential of the first terminal and the second potential of the second terminal.

3. The control circuit includes a comparison circuit, The diode device according to claim 2, wherein the comparison circuit is configured to output a signal based on the difference between the first potential and the second potential.

4. The diode device according to claim 3, wherein the comparison circuit includes a current mirror circuit and a differential circuit pair.

5. The control circuit includes a buffer circuit, The diode device according to claim 4, wherein the buffer circuit is provided between the comparison circuit and the control output unit.

6. The diode device according to any one of claims 3 to 5, wherein the comparison circuit includes one or more nMOS transistors.

7. The control circuit includes a first transistor, a second transistor, a third transistor, and a fourth transistor. The first terminal of the first transistor and the second terminal of the second transistor are electrically connected to the first terminal. The first other end of the first transistor is electrically connected to the third end of the third transistor. The second other end of the second transistor is electrically connected to the fourth end of the fourth transistor. The third other end of the third transistor and the fourth other end of the fourth transistor are electrically connected to the control power input section. The first gate of the first transistor and the second gate of the second transistor are electrically connected to the second other end. The third gate of the third transistor is electrically connected to the first terminal. The diode device according to claim 2 or 3, wherein the fourth gate of the fourth transistor is electrically connected to the second terminal.

8. The diode device according to claim 7, wherein at least one of the first transistor, the second transistor, the third transistor, and the fourth transistor is an nMOS transistor.

9. The control circuit further includes a fifth transistor and a sixth transistor, The fifth terminal of the fifth transistor is electrically connected to the first terminal. The fifth other end of the fifth transistor is electrically connected to the control output section. The sixth terminal of the sixth transistor is electrically connected to the control output section. The other end of the sixth transistor is electrically connected to the control power input section. The fifth gate of the fifth transistor is electrically connected to the second other end. The diode device according to claim 7, wherein the sixth gate of the sixth transistor is electrically connected to the first other end.

10. The diode device according to claim 9, wherein at least one of the fifth transistor and the sixth transistor is an nMOS transistor.

11. The diode device according to claim 3, wherein the voltage generation circuit is configured to output a constant voltage based on the voltage between the first terminal and the second terminal.

12. The voltage generation circuit includes a first voltage generation diode, a first voltage generation transistor, and a first capacitor. The first voltage generating anode of the first voltage generating diode is electrically connected to the second terminal. The first voltage generating cathode of the first voltage generating diode is electrically connected to the first voltage generating drain of the first voltage generating transistor. The first voltage generation source of the first voltage generation transistor is electrically connected to the first capacitor terminal of the first capacitor and the voltage output section. The other end of the first capacitor and the first voltage generating gate of the first voltage generating transistor are electrically connected to the first terminal. The diode device according to claim 3, wherein the first voltage generating transistor is a depletion-mode MOS transistor.

13. The voltage generation circuit further includes a second voltage generation diode, The second voltage generating anode of the second voltage generating diode is electrically connected to the first terminal. The diode device according to claim 12, wherein the second voltage generating cathode of the second voltage generating diode is electrically connected to the voltage output section.

14. The diode device according to claim 13, wherein the second voltage generating diode is a Zener diode.

15. The diode device according to claim 3, wherein the transistor element includes a Schottky barrier transistor.

16. The transistor element further includes a semiconductor member, a metal member, and a first insulating member. The semiconductor member is located between the drain electrode and the source electrode in a first direction from the drain electrode to the source electrode. The source electrode includes a first electrode portion and a second electrode portion, The semiconductor member includes a first semiconductor region of a first conductivity type, The first semiconductor region includes a first subregion, a second subregion, and a third subregion. The gate electrode is located between the drain electrode and the first electrode portion in the first direction. The direction from the second partial region to the second electrode portion is along the first direction, The third sub-region is located between the gate electrode and the second electrode portion in a second direction intersecting the first direction. The metal member includes a first metal portion, The first metal portion is located between the gate electrode and the second electrode portion in the second direction. The first metal portion forms a Schottky contact with the third subregion. The diode device according to claim 3, wherein at least a portion of the first insulating member is located between the gate electrode and the semiconductor member.

17. The diode device according to claim 16, wherein the first metal portion includes at least one selected from the group consisting of Ti, W, Mo, Ta, Zr, Al, Sn, V, Re, Os, Ir, Pt, Pd, Rh, Ru, Nb, Sr, and Hf.

18. The aforementioned metal member further includes a second metal portion, The second metal portion is located between the first partial region and the second electrode portion in the first direction. The direction from at least a portion of the gate electrode toward the second metal portion is along the second direction, The diode device according to claim 16, wherein the second work function of the second metal portion is lower than the first work function of the first metal portion.

19. The semiconductor member further includes a second semiconductor region of the first conductivity type, The second semiconductor region is located between the first semiconductor region and the source electrode. The diode device according to claim 16, wherein the concentration of the second impurity of the first conductivity type in the second semiconductor region is higher than the concentration of the first impurity of the first conductivity type in the first semiconductor region.

20. The substrate further comprises a substrate surface, The third direction from the substrate surface to the transistor element intersects with the substrate surface, The diode device according to claim 1, wherein the direction from the substrate surface to the control circuit is along the third direction.

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