Plasma processing equipment

Abstract

The present invention provides a plasma processing apparatus for appropriately positioning a ring assembly relative to a substrate support. [Solution] The plasma processing apparatus includes: a substrate support portion 11 disposed within a plasma processing chamber and having a substrate support surface 110a and a ring support surface 110b; a conductive ring 123 disposed on the ring support surface and having at least three through holes 121a, each of which has an upper hole portion and a lower hole portion, and having at least three grooves corresponding to each of the through holes; a lift pin 131 disposed below the ring support surface and corresponding to each of the grooves, each having an upper support portion 131a and a lower support portion 131b, the upper support portion supporting the conductive ring from below through the through holes of the insulating ring 121, and the lower support portion supporting the insulating ring from below; and at least one actuator for moving the lift pin in the vertical direction.

Claims

1. Plasma processing chamber and A substrate support section is disposed within the plasma processing chamber and has a substrate support surface and a ring support surface, An insulating ring disposed on the ring support surface and having at least three through holes, each of the at least three through holes having an upper hole portion and a lower hole portion, the upper hole portion having a first width in the radial direction of the insulating ring and a second width in the circumferential direction of the insulating ring, the second width being smaller than the first width, and the lower hole portion having a flared shape that widens downward when viewed from the side, A conductive ring supported by the insulating ring, having at least three grooves on its lower surface corresponding to each of the at least three through holes, wherein each of the at least three grooves has a third width in the radial direction of the conductive ring and a fourth width in the circumferential direction of the conductive ring, the fourth width being smaller than the third width, and At least three lift pins are positioned below the ring support surface and correspond to each of the at least three grooves, each of which has an upper support portion and a lower support portion, wherein the upper support portion is configured to support the conductive ring from below by contacting the bottom surface of the groove of the conductive ring through the through hole of the insulating ring, and the lower support portion is configured to support the insulating ring from below by contacting the inclined surface of the insulating ring that defines the lower hole portion, A plasma processing apparatus comprising at least one actuator configured to move the at least three lift pins in the vertical direction.

2. The plasma processing apparatus according to claim 1, wherein the lower support portion of the lift pin is configured to contact the inclined surface at two points in the radial direction of the insulating ring, without contacting the inclined surface in the circumferential direction of the insulating ring.

3. The plasma processing apparatus according to claim 1 or 2, wherein each of the at least three through holes of the insulating ring has a rectangular shape when viewed from above.

4. The plasma processing apparatus according to claim 1 or 2, wherein the upper support portion has a cylindrical shape having a first diameter smaller than the second width, and the lower support portion has a cylindrical shape having a second diameter larger than the second width.

5. The plasma processing apparatus according to claim 1 or 2, wherein the tip of the upper support portion of the lift pin has a hemispherical shape.

6. The plasma processing apparatus according to claim 1 or 2, wherein the tip of the upper support portion of the lift pin has a flat surface.

7. Each of the at least three grooves of the conductive ring is Flat base and A vertical side surface extending downward from the flat bottom surface, A plasma processing apparatus according to claim 1 or 2, defined by a flared side surface that extends downward from the vertical side surface.

8. The plasma processing apparatus according to claim 1 or 2, wherein each of the at least three grooves of the conductive ring is defined by a curved bottom surface.

9. Each of the at least three grooves of the conductive ring is Flat base and A plasma processing apparatus according to claim 1 or 2, defined by a flared side surface that extends downward from the flat bottom surface.

10. Each of the at least three grooves of the conductive ring is The bottom surface has a shape that can be fitted with the tip of the upper support portion of the lift pin, The plasma processing apparatus according to claim 1 or 2, having a flared side surface that extends downward from the bottom surface.

11. The plasma apparatus according to claim 1 or 2, further comprising an additional conductive ring disposed to surround the conductive ring and the insulating ring, wherein at least a portion of the additional conductive ring longitudinally overlaps with the outer portion of the insulating ring.

Images