Light-emitting device

JP2026097903APending Publication Date: 2026-06-16SEMICON ENERGY LAB CO LTD
View PDF 11 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2026-02-27
Publication Date
2026-06-16

Smart Images

  • Figure 2026097903000001_ABST
    Figure 2026097903000001_ABST
Patent Text Reader

Abstract

Providing a display device or the like with a novel configuration in which the gate capacitance of a transistor connected to a scanning line is reduced. Or, providing a display device or the like with a novel configuration in which the resistance of a scanning line is reduced. Or, providing a display device or the like with a novel configuration that enables high-precision pixel arrangement. Or, providing a display device or the like with a novel configuration in which an increase in manufacturing cost is suppressed. SOLUTION: In a transistor having a first gate electrode and a second gate electrode connected to a scanning line, the first gate electrode is made of a metal material with low resistance, and the second gate electrode is made of a metal oxide material capable of reducing oxygen deficiency in an oxide semiconductor layer. The first gate electrode is connected to the scanning line, and the second gate electrode is connected to a wiring to which a fixed potential is applied. 【SOLUTION】In a transistor having a first gate electrode and a second gate electrode connected to a scanning line, the first gate electrode is formed of a low-resistance metal material, and the second gate electrode is formed of a metal oxide material capable of reducing oxygen deficiency in an oxide semiconductor layer. The first gate electrode is connected to the scanning line, and the second gate electrode is connected to a wiring to which a fixed potential is applied. ​​​​​​​
Need to check novelty before this filing date? Find Prior Art

Claims

1. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or the other of the drain electrode of the second transistor is electrically connected to the first gate electrode of the second transistor. The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, which functions as the other source electrode or drain electrode of the second transistor, and which also functions as the other source electrode or drain electrode of the third transistor, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. Light-emitting device.

2. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, which functions as the other source electrode or drain electrode of the second transistor, and which also functions as the other source electrode or drain electrode of the third transistor, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. Light-emitting device.

3. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or the other of the drain electrode of the second transistor is electrically connected to the first gate electrode of the second transistor. The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, which functions as the other source electrode or drain electrode of the second transistor, and which also functions as the other source electrode or drain electrode of the third transistor, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the entire region where the second conductive film is located overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. Light-emitting device.

4. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, which functions as the other source electrode or drain electrode of the second transistor, and which also functions as the other source electrode or drain electrode of the third transistor, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the entire region where the second conductive film is located overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. Light-emitting device.

5. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or the other of the drain electrode of the second transistor is electrically connected to the first gate electrode of the second transistor. The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, which functions as the other source electrode or drain electrode of the second transistor, and which also functions as the other source electrode or drain electrode of the third transistor, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. The fourth conductive film is electrically connected to the pixel electrode through an opening in an insulating film having a region positioned above the fourth conductive film. In a plan view, the opening overlaps with the first conductive film. Light-emitting device.

6. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, which functions as the other source electrode or drain electrode of the second transistor, and which also functions as the other source electrode or drain electrode of the third transistor, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. The fourth conductive film is electrically connected to the pixel electrode through an opening in an insulating film having a region positioned above the fourth conductive film. In a plan view, the opening overlaps with the first conductive film. Light-emitting device.

7. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or the other of the drain electrode of the second transistor is electrically connected to the first gate electrode of the second transistor. The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, functioning as the other source electrode or drain electrode of the second transistor, and functioning as the other source electrode or drain electrode of the third transistor, It has a fifth conductive film that functions as the current supply line and is electrically connected to the third conductive film, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. Light-emitting device.

8. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, functioning as the other source electrode or drain electrode of the second transistor, and functioning as the other source electrode or drain electrode of the third transistor, It has a fifth conductive film that functions as the current supply line and is electrically connected to the third conductive film, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. Light-emitting device.

9. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or the other of the drain electrode of the second transistor is electrically connected to the first gate electrode of the second transistor. The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, functioning as the other source electrode or drain electrode of the second transistor, and functioning as the other source electrode or drain electrode of the third transistor, It has a fifth conductive film that functions as the current supply line and is electrically connected to the third conductive film, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the entire region where the second conductive film is located overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. The fourth conductive film is electrically connected to the pixel electrode through an opening in an insulating film having a region positioned above the fourth conductive film. In a plan view, the opening overlaps with the first conductive film. Light-emitting device.

10. The pixel portion includes a first to third transistor, a light-emitting element, a signal line, a current supply line, and wiring. The source electrode or drain electrode of the first transistor is electrically connected to the signal line. The source electrode or the other of the drain electrode of the first transistor is electrically connected to the second gate electrode of the second transistor. One of the source electrode or drain electrode of the second transistor is electrically connected to the current supply line. The source electrode or drain electrode of the second transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, The source electrode or drain electrode of the third transistor is electrically connected to the wiring. The source electrode or drain electrode of the third transistor, the other of which is electrically connected to the pixel electrode of the light-emitting element, is a light-emitting device. A first conductive film having the function of the first gate electrode of the second transistor, An oxide semiconductor film having a region positioned above the first conductive film and having the channel region of the second transistor, A second conductive film having a region positioned above the oxide semiconductor film and functioning as the second gate electrode of the second transistor, A third conductive film having a region positioned above the oxide semiconductor film and functioning as either the source electrode or the drain electrode of the second transistor, A fourth conductive film having a region positioned above the oxide semiconductor film, functioning as the other source electrode or drain electrode of the second transistor, and functioning as the other source electrode or drain electrode of the third transistor, It has a fifth conductive film that functions as the current supply line and is electrically connected to the third conductive film, In a plan view, the total area of ​​the region of the oxide semiconductor film that overlaps with the fourth conductive film is greater than the total area of ​​the region of the oxide semiconductor film that overlaps with the third conductive film. In a plan view, the entire region of the oxide semiconductor film that overlaps with the second conductive film overlaps with the first conductive film. In a plan view, the entire region where the second conductive film is located overlaps with the first conductive film. In a plan view, the third conductive film does not overlap with the first conductive film. In a plan view, the fourth conductive film overlaps with the first conductive film. The fourth conductive film is electrically connected to the pixel electrode through an opening in an insulating film having a region positioned above the fourth conductive film. In a plan view, the opening overlaps with the first conductive film. Light-emitting device.

11. In any one of claims 1 to 10, Each of the first to fourth conductive films comprises a first film containing titanium and a second film containing copper, having a region positioned above the first film. Light-emitting device.