Substrate processing equipment

Abstract

To provide a substrate processing apparatus that suppresses deformation of the lower shower head located on the underside of the substrate in response to temperature changes, and further enables effective heat transfer to the underside of the substrate. [Solution] A substrate processing apparatus comprising: a chamber that provides a processing space for a substrate; an upper shower head provided on the inside upper part of the chamber and supplying a purge gas toward the upper surface of the substrate; and a substrate support section provided on the inside lower part of the chamber and having a metal lower shower head assembly that supports the peripheral edge of the lower surface of the substrate and supplies at least one of a process gas and a cleaning gas toward the lower surface of the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that can more effectively clean the lower surface of a substrate, prevent deformation of a shower head, and prevent leakage of high-frequency power (RF power: Radio Frequency Power).

Background Art

[0002] Generally, when depositing a thin film on the upper surface of a substrate, stress can act on the substrate due to the thin film, and thus a warping phenomenon may occur in the substrate. When such a warping phenomenon occurs in the substrate, it becomes difficult for various subsequent processes on the substrate to proceed smoothly. Therefore, a thin film having the same stress is deposited on the lower surface of the substrate to reduce the warping phenomenon of the substrate.

[0003] In the case of an apparatus for depositing a thin film on the lower surface of a substrate, it has a shower head structure that supplies gas not only to the upper part but also to the lower part of the substrate.

[0004] In the lower shower head located below the substrate, deformation due to temperature may occur. Also, when using plasma in the process for the substrate, the RF power that should originally concentrate between the substrate and the lower shower head may leak to the chamber side and be lost. Furthermore, in an apparatus for depositing a thin film on the lower surface of a substrate, foreign substances such as particles may be generated on the lower surface of the substrate, and when supplying a cleaning gas by a shower head located above the substrate, the cleaning effect was not sufficient.

Summary of the Invention

Problems to be Solved by the Invention

[0005] An object of the present invention is to provide a substrate processing apparatus that suppresses deformation of a lower shower head located below the substrate according to temperature and can effectively perform heat transfer to the lower surface of the substrate in order to solve the above-described problems.

[0006] Furthermore, the objective is to provide a substrate processing apparatus that, when using plasma, ensures that RF power is guided to the maximum extent between the substrate and the lower showerhead, thereby minimizing leakage of RF power into the chamber.

[0007] Furthermore, the objective is to provide a substrate processing apparatus that can supply cleaning gas toward the underside of the substrate to improve cleaning efficiency and minimize the generation of particles caused by the mixing of cleaning gas and process gas. [Means for solving the problem]

[0008] The above-described object of the present invention can be achieved by a substrate processing apparatus comprising: a chamber that provides a processing space for a substrate; an upper shower head provided on the inside upper part of the chamber and supplying a purge gas toward the upper surface of the substrate; and a substrate support portion provided on the inside lower part of the chamber and having a metal lower shower head assembly that supports the peripheral edge of the lower surface of the substrate and supplies at least one of a process gas and a cleaning gas toward the lower surface of the substrate.

[0009] Here, the metal lower showerhead assembly may include a metal opposing plate having a plurality of supply holes formed therein for supplying at least one of a process gas and a cleaning gas toward the lower surface of the substrate, and a metal lower heater positioned below the metal opposing plate, supporting the metal opposing plate and heating the substrate.

[0010] Furthermore, the metal opposing plate may be positioned at a distance from the metal lower heater and may be provided with at least one support bar that supports the metal opposing plate and connects the metal opposing plate to the metal lower heater.

[0011] Furthermore, the support bar may be provided on either the metal opposing plate or the metal lower heater, extending toward the other, and a fastening member for fixing the end of the support bar may be fastened to the other.

[0012] Furthermore, both ends of the support bar may be fixed to the metal opposing plate and the metal lower heater.

[0013] On the other hand, the device may further include an insulator that electrically separates the metal lower shower head assembly from the chamber, and a high-frequency (RF) adjustment unit connected to the lower shower head assembly that adjusts the impedance of the metal lower shower head assembly.

[0014] In this case, the lower supply passage may be further connected to the drive bar of the lower metal showerhead assembly and supply a process gas or cleaning gas, and the lower supply passage may penetrate the insulator and be connected to the RF adjustment unit at the bottom of the chamber.

[0015] Furthermore, an RF load connecting the drive bar and the RF adjustment unit may be provided.

[0016] Furthermore, the system may further include a first supply channel connected to the metal lower showerhead assembly for supplying process gas, and a second supply channel connected to the metal lower showerhead assembly for supplying cleaning gas.

[0017] In this case, the first supply channel is connected to the central part of the metal lower showerhead assembly, and the second supply channel may be located adjacent to the first supply channel.

[0018] Furthermore, the second supply channel may be connected to a remote plasma source (RPS). [Effects of the Invention]

[0019] According to the present invention having the above-described configuration, the lower shower head located on the lower surface of the substrate is made of metal to enhance the temperature transfer effect, and further, the deformation of the lower shower head can be suppressed by the support bar. Also, heat can be transferred by conduction through the support bar, and the substrate can be heated more effectively.

[0020] Moreover, when using plasma, the RF adjustment unit is used to maximize the induction of RF power between the substrate and the lower shower head, and to maximize the suppression of the leakage of RF power into the chamber, thereby enhancing the plasma effect.

[0021] Furthermore, by supplying a cleaning gas toward the lower part of the substrate to enhance the cleaning efficiency and separating the flow paths of the cleaning gas and the process gas, particles caused by the mixing of the cleaning gas and the process gas can be minimized.

Brief Description of the Drawings

[0022] [Figure 1] FIG. 1 is a side cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a side view showing an enlarged metal facing plate and a metal lower heater. [Figure 3] FIG. 3 is a partially enlarged side view showing an enlarged dotted-line area in FIG. 2 and further enlarged lower supply paths. [Figure 4] FIG. 4 is a side cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0023] Hereinafter, referring to the drawings, the structure of a substrate processing apparatus according to an embodiment of the present invention will be described in detail.

[0024] FIG. 1 is a side cross-sectional view of a substrate processing apparatus 1000 according to an embodiment of the present invention.

[0025] Referring to Figure 1, the substrate processing apparatus 1000 may include a chamber 100 that provides a processing space 110 for the substrate W, an upper shower head 200 provided on the upper inside of the chamber 100 and supplying a purge gas toward the upper surface of the substrate W, and a substrate support section 400 having a metal lower shower head assembly 430 provided on the lower inside of the chamber 100 that supports the peripheral edge of the lower surface of the substrate W and supplies at least one of a process gas and a cleaning gas toward the lower surface of the substrate W.

[0026] First, the substrate processing apparatus 1000 may include a chamber 100 that provides a processing space 110 inside.

[0027] The chamber 100 may also provide a processing space 110 inside which a deposition process is carried out on the substrate W.

[0028] The upper inner part of the chamber 100 may be provided with an upper shower head 200 that supplies a purge gas, composed of an inert gas or the like, toward the upper surface of the substrate W.

[0029] The upper shower head 200 may include an upper shower head plate 210. The upper shower head 200 may further include an upper heater 230 provided on the upper part of the upper shower head plate 210. The upper shower head plate 210 may be provided with a plurality of upper through holes 212. On the other hand, although not shown in the figures, the upper shower head 200 may be configured to move up and down.

[0030] An upper supply passage 252 for supplying an inert gas or the like may be connected to the upper part of the chamber 100. The inert gas supplied along the upper supply passage 252 can pass through the upper diffusion section 214 and the upper shower head plate 210 and be supplied to the upper surface of the substrate W.

[0031] The upper shower head 200 can be connected to an RF power supply unit (not shown) to receive RF power. In this case, the upper shower head 200 functions as the first electrode, and the substrate support unit 400, described later, can be grounded and function as the second electrode.

[0032] Furthermore, although not shown in the figures, it is also possible to configure the RF power supply unit to be connected to the substrate support unit 400 and the upper shower head 200 to be grounded. In other words, the RF power supply unit may be connected to either the upper shower head 200 or the substrate support unit 400, with the other being grounded.

[0033] On the other hand, a substrate support portion 400 on which the substrate W is placed and supported may be provided in the lower inner part of the chamber 100.

[0034] The substrate support portion 400 may be provided below the processing space 110 so as to be vertically movable, and can support the peripheral edge of the lower surface of the substrate W and expose the lower surface of the substrate W to the process gas.

[0035] The substrate support portion 400 is connected to a drive bar 470 that extends downward, and the drive bar 470 is connected to a drive unit (not shown) such as a motor, so that the drive bar 470 and the substrate support portion 400 can move up and down by the drive of the drive unit.

[0036] In this case, a bellows 102 extending downward is provided at the lower part of the chamber 100, and the drive bar 470 may be positioned inside the bellows 102.

[0037] Specifically, the substrate support portion 400 may include a substrate holder 410 that supports the peripheral edge of the lower surface of the substrate W, and a metal lower shower head assembly 430 provided in the lower inner part of the chamber 100 and supplying at least one of a process gas and a cleaning gas toward the lower surface of the substrate W.

[0038] The substrate holder 410 can support the peripheral edge of the lower surface of the substrate W. In this case, the metal lower shower head assembly 430 may be provided inside the substrate holder 410.

[0039] In the present invention, the metal lower showerhead assembly 430 may be made of metal, such as aluminum, in order to function as an electrode for plasma generation. The substrate holder 410 may be made of an insulator, such as a ceramic material.

[0040] Figure 2 is an enlarged side view showing the metal opposing plate 431 and the metal lower heater 450 of the substrate support portion 400.

[0041] Referring to Figures 1 and 2, the metal lower showerhead assembly 430 may include a metal opposing plate 431 having a plurality of supply holes 432 formed therein for supplying at least one of process gas and cleaning gas toward the lower surface of the substrate W, and a metal lower heater 450 positioned below the metal opposing plate 431, supporting the metal opposing plate 431 and heating the substrate W.

[0042] Multiple lift pins 310 and 320 are arranged through the metal lower shower head assembly 430, and as the substrate support portion 400 moves up and down, the upper ends of the lift pins 310 and 320 protrude to support the substrate W, allowing the substrate W to be loaded into or unloaded from the substrate holder 410.

[0043] The metal lower heater 450 heats the metal opposing plate 431 and also supports the metal opposing plate 431 and the substrate holder 410. In this case, a power line 800 is arranged along the inside of the drive bar 470 to supply power to the metal lower heater 450.

[0044] In this case, the metal opposing plate 431 may be connected to the upper surface of the metal lower heater 450, and the lower supply passage 472 to which process gas and the like is supplied may pass through the drive bar 470 and the metal lower heater 450 and be connected to the lower diffusion section 434.

[0045] Furthermore, the fixing portion 460 that supports the lower end of the substrate holder 410 may be connected to the metal lower heater 450.

[0046] In this case, the fixing portion 460 does not completely seal and connect the lower end of the substrate holder 410 and the lower metal heater 450, and a plurality of fixing portions 460 may be provided and arranged at predetermined intervals along the outer circumference of the lower metal heater 450.

[0047] In other words, when there are multiple fixing portions 460, the space between adjacent fixing portions 460 is open downwards and can communicate with the inside of the chamber 100. Therefore, the space between the side surface of the metal opposing plate 431 and the side surface of the metal lower heater 450 and the inner surface of the substrate holder 410 can form an exhaust passage 462.

[0048] In this case, the process gas supplied from the metal opposing plate 431 can be discharged downward into the chamber 100 via the exhaust passage 462 and exhausted to the outside of the chamber 100 via an exhaust section (not shown) provided at the bottom of the chamber 100.

[0049] Although not shown in the figures, the substrate holder 410 may be formed in a ring shape rather than a cylindrical shape and supported at a distance from the upper surface of the metal opposing plate 431. In this case, the fixing portion 460 is positioned on the upper surface of the metal opposing plate 431, and a gap can be formed between the ring-shaped substrate holder and the upper surface of the metal opposing plate 431.

[0050] On the other hand, as shown in Figure 2, the metal opposing plate 431 may be positioned at a distance from the metal lower heater 450, and the aforementioned lower diffusion portion 434 may be formed between the metal opposing plate 431 and the metal lower heater 450.

[0051] The lower diffusion section 434 is provided with a baffle 490, which allows the process gas or cleaning gas supplied via the lower supply passage 472 to be dispersed and supplied.

[0052] In this case, a support portion 433 may be formed that protrudes downward along the lower peripheral edge of the metal opposing plate 431. The lower end of the support portion 433 can be placed on the metal lower heater 450 to support the metal opposing plate 431.

[0053] Furthermore, at least one support bar 440, 442 may be provided between the metal opposing plate 431 and the metal lower heater 450 to support the metal opposing plate 431 and to connect the metal opposing plate 431 and the metal lower heater 450.

[0054] The support bars 440 and 442 support the metal opposing plate 431, thereby preventing deformation of the metal opposing plate 431.

[0055] Furthermore, the support bars 440 and 442 can transmit heat from the lower metal heater 450 to the metal opposing plate 431 by conduction, thereby more effectively heating the metal opposing plate 431.

[0056] The number of support bars 440 and 442 is not particularly limited and may be adjusted as appropriate considering the size, diameter, weight, or thickness of the metal opposing plate 431.

[0057] The support bars 440 and 442 are provided on either the metal opposing plate 431 or the metal lower heater 450, and extend toward the other, and fastening members 444 and 445 that fix the ends of the support bars 440 and 442 may be fastened to the other.

[0058] For example, the support bars 440 and 442 may be formed extending from the lower surface of the metal opposing plate 431 toward the metal lower heater 450. In this case, the metal lower heater 450 may have recesses 441 and 443 into which the lower ends of the support bars 440 and 442 are inserted and connected. When the lower ends of the support bars 440 and 442 are inserted into the recesses 441 and 443, fastening members 444 and 445, such as bolts that penetrate the metal lower heater 450, may be fastened to and connected to the lower ends of the support bars 440 and 442.

[0059] As described above, when the metal opposing plate 431 and the metal lower heater 450 are fastened together in a detachable manner, it becomes possible to easily separate the metal opposing plate 431 and the metal lower heater 450. In this case, if maintenance is required on the inside of the metal lower shower head assembly 430, such as maintenance on the baffle 490, the metal opposing plate 431 and the metal lower heater 450 can be separated to facilitate the work.

[0060] On the other hand, although not shown in the figures, both ends of the support bars 440 and 442 may be fixed to both the metal opposing plate 431 and the metal lower heater 450. For example, the support bars 440 and 442 may be formed to extend from the lower surface of the metal opposing plate 431 toward the metal lower heater 450, and the lower ends of the support bars 440 and 442 may be fixed to the metal lower heater 450 by welding or other means.

[0061] On the other hand, referring to Figure 1, process gas or cleaning gas is supplied through a lower supply passage 472 that penetrates the drive bar 470, and the process gas or cleaning gas supplied along the lower supply passage 472 is supplied to the metal opposing plate 431 via a lower diffusion section 434. The process gas supplied to the metal opposing plate 431 can be supplied toward the lower surface of the substrate W through the lower through-hole 432.

[0062] Figure 3 is a magnified view of the dotted line area in Figure 2, and is a partially enlarged side view showing the lower supply passage 472 in a further magnified view.

[0063] Referring to Figures 1 to 3, the lower supply passage 472 may include a first supply passage 474 connected to the metal lower showerhead assembly 430 for supplying process gas, and a second supply passage 476 connected to the metal lower showerhead assembly 430 for supplying cleaning gas.

[0064] In other words, in the present invention, by distinguishing between the channel through which the process gas is supplied and the channel through which the cleaning gas is supplied, the generation of foreign matter such as particles caused by mixing of the process gas and the cleaning gas can be suppressed to the greatest extent possible.

[0065] In this case, the first supply channel 474 may be connected to the central part of the metal lower shower head assembly 430, and the second supply channel 476 may be arranged adjacent to the first supply channel 474 and surrounding it.

[0066] The first supply channel 474 can be connected to a process gas supply source 700 and supplied with process gas. For example, the process gas supply source 700 may be connected to the first supply channel 474 via a first connection channel 710.

[0067] Furthermore, the second supply channel 476 may be connected to a remote plasma source (RPS) 600, and the cleaning gas may be supplied in the form of remote plasma. For example, the RPS 600 may be connected to the second supply channel 476 via a second connecting channel 610.

[0068] By supplying cleaning gas from the lower part of the substrate W via the second supply channel 476 in this manner, the cleaning effect on the lower part of the substrate W can be enhanced compared to when the cleaning gas is supplied from the upper part of the substrate W.

[0069] During processing of the substrate W, process gas may be supplied via the first supply channel 474 and directed toward the lower surface of the substrate W.

[0070] In this case, when the RF power supply unit is connected to the upper shower head 200, the lower shower head 430 is grounded, and plasma can be generated between it and the substrate W.

[0071] On the other hand, the substrate processing apparatus 1000 according to the present invention may include an RF adjustment unit 500 to ensure that RF power is transmitted to the substrate support unit 400 and to minimize the transmission of RF power to the chamber 100 when plasma is generated between the lower surface of the substrate W and the metal lower shower head assembly 430.

[0072] The RF adjustment unit 500 is electrically connectable to the metal lower shower head assembly 430, and by operating the RF adjustment unit 500, the capacitance of the metal lower shower head assembly 430 can be adjusted, thereby inducing a relatively large RF current to the metal lower shower head assembly 430.

[0073] The RF adjustment unit 500 may be configured as a so-called "analog tuner," and may have a configuration that allows the capacitance to be adjusted by operating a variable capacitance diode provided inside.

[0074] Therefore, by operating the RF adjustment unit 500 to adjust the capacitance of the metal lower shower head assembly 430, a relatively larger RF current can be induced on the metal lower shower head assembly 430 side rather than on the wall of the chamber 100.

[0075] In this case, a first insulator 520 may be provided to insulate the drive bar 470 of the metal lower shower head assembly 430 from the chamber 100, and the lower supply passage 472 may pass through the first insulator 520 and be connected to the RF adjustment unit 500 at the bottom of the chamber 100.

[0076] Furthermore, a second insulator 720 and a third insulator 620 may be provided between the process gas supply source 700 and the lower supply passage 472, and between the RPS 600 and the lower supply passage 472, respectively.

[0077] In this case, the second insulator 720 may be provided between the first supply channel 474 and the first connecting channel 710. Furthermore, the third insulator 620 may be provided between the second supply channel 476 and the second connecting channel 610.

[0078] On the other hand, Figure 4 shows a substrate processing apparatus 1000' according to another embodiment. In Figure 4, the same reference numerals are used for components that are the same as those in Figure 1 described above.

[0079] Referring to Figure 4, the RF adjustment unit 500 may be connected to the drive bar 470 and the metal lower shower head assembly 430 via the RF load 522.

[0080] In this case, the first insulator 521 may be connected to the lower end of the drive bar 470, and the first insulator 521 may be connected to the chamber 100 via the connection portion 523.

[0081] Although preferred embodiments of the present invention have been described above, those skilled in the art can modify or change the present invention in various ways without departing from the spirit and scope of the invention as described in the claims. Therefore, if a modified implementation basically includes the elements of the claims of the present invention, it should be understood that it falls within the technical scope of the present invention. [Explanation of Symbols]

[0082] 100 chambers 110 Processing space 200 Upper shower head 210 Upper shower head plate 230 Top heater 400 Substrate support section 410 PCB holder 430 Metal Lower Shower Head Assembly 431 Metal Opposing Plate 440, 442 Support bars 450 Metal Lower Heater 500 RF adjustment section 600 Remote Plasma Source (RPS) 700 Process gas supply sources 1000 Substrate Processing Equipment

Claims

1. A chamber that provides a processing space for the substrate, An upper shower head is provided on the upper inside of the chamber and supplies purge gas toward the upper surface of the substrate, A substrate support portion having a metal lower showerhead assembly provided in the lower inner part of the chamber, which supports the peripheral edge of the lower surface of the substrate and supplies at least one of a process gas and a cleaning gas toward the lower surface of the substrate, A substrate processing apparatus characterized by comprising:

2. The aforementioned metal lower shower head assembly is A metal opposing plate having a plurality of supply holes formed therein for supplying at least one of process gas and cleaning gas toward the lower surface of the substrate, A metal lower heater is positioned below the metal opposing plate, supports the metal opposing plate, and heats the substrate. A substrate processing apparatus according to claim 1, characterized by comprising:

3. The substrate processing apparatus according to claim 2, characterized in that the metal opposing plate is positioned spaced apart from the metal lower heater, and comprises at least one support bar that supports the metal opposing plate and connects the metal opposing plate and the metal lower heater.

4. The aforementioned support bar is The substrate processing apparatus according to claim 3, characterized in that it is provided on either the metal opposing plate or the metal lower heater, extends toward the other, and a fastening member for fixing the end of the support bar is fastened to the other.

5. The substrate processing apparatus according to claim 3, characterized in that both ends of the support bar are fixed to the metal opposing plate and the metal lower heater.

6. The substrate processing apparatus according to claim 1, further comprising: an insulator that electrically separates the metal lower shower head assembly from the chamber; and a high-frequency (RF) adjustment unit connected to the metal lower shower head assembly for adjusting the capacitance of the metal lower shower head assembly.

7. The lower metal showerhead assembly is further equipped with a lower supply passage connected to the drive bar for supplying process gas or cleaning gas, The substrate processing apparatus according to claim 6, characterized in that the lower supply path penetrates the insulator and is connected to the high-frequency (RF) adjustment unit at the lower part of the chamber.

8. The substrate processing apparatus according to claim 7, further comprising an RF load connecting the drive bar and the high-frequency (RF) adjustment unit.

9. The substrate processing apparatus according to claim 1, further comprising: a first supply channel connected to the metal lower showerhead assembly for supplying process gas; and a second supply channel connected to the metal lower showerhead assembly for supplying cleaning gas.

10. The substrate processing apparatus according to claim 9, characterized in that the first supply channel is connected to the central part of the metal lower showerhead assembly, and the second supply channel is arranged adjacent to the first supply channel.

11. The substrate processing apparatus according to claim 9, characterized in that the second supply channel is connected to a remote plasma source (RPS).

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