Processing apparatus and processing method

Abstract

To improve the uniformity of substrate processing. [Solution] The processing apparatus comprises a processing container, a stage or a first ring, a second ring, and a drive unit. The stage is used to place the substrate inside the processing container. The first ring is located on the periphery of the stage. The second ring is positioned with a gap between it and the stage or the first ring, dividing the processing container into an upper space and a lower space. The drive unit is connected to the second ring and drives the second ring.

Description

Technical Field

[0003]

[0001] The present disclosure relates to a processing apparatus and a processing method.

Background Art

[0002] For example, in Patent Document 1, in a substrate processing apparatus, when installing a peripheral member of a stage in a processing chamber, the peripheral member of the stage is fixed to the processing chamber by a first positioning pin disposed at a position close to a reference position. On the other hand, a second positioning pin located at a position farther from the first positioning pin as viewed from the reference position is inserted into a second hole portion formed in an elongated hole shape along the direction in which the second positioning pin moves. With this configuration, the displacement of the peripheral member of the stage when the processing chamber is switched from a non-heated state to a heated state can be suppressed to the extent of the movement amount of the first positioning, and the displacement dimension can be reduced.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a processing apparatus and a processing method capable of improving the uniformity of substrate processing.

Means for Solving the Problems

[0005] One aspect of the present disclosure provides a processing apparatus including a processing container, a stage or a first ring, a second ring, and a driving unit. The stage mounts a substrate in the processing container. The first ring is located at the periphery of the stage. The second ring is located with a gap provided between the stage or the first ring and partitions the inside of the processing container into an upper space and a lower space. The driving unit is connected to the second ring and drives the second ring. [Effects of the Invention]

[0006] According to this disclosure, the uniformity of substrate processing can be improved. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a cross-sectional view showing an example of the configuration of a processing apparatus according to one embodiment. [Figure 2] Figure 2 is an enlarged view showing the periphery of the stage according to the first embodiment. [Figure 3] Figure 3 is a plan view showing the periphery of the stage according to the first embodiment. [Figure 4] Figure 4 is a plan view showing the periphery of the stage according to the first embodiment. [Figure 5] Figure 5 is an enlarged view showing the area around the stage according to the second embodiment. [Figure 6] Figure 6 is a plan view showing the periphery of the stage according to the second embodiment. [Modes for carrying out the invention]

[0008] Embodiments of the apparatus and processing method of this disclosure will be described in detail below with reference to the drawings. However, these embodiments do not limit the apparatus and processing method of this disclosure, and the following embodiments can be combined as appropriate, provided that the configurations and processing details of this disclosure are not inconsistent. Furthermore, the figures referenced below are schematic for illustrative purposes. Therefore, details may be omitted, and the dimensional ratios do not necessarily correspond to those of reality.

[0009] (Example of a processing unit configuration) An example of the configuration of the processing apparatus 10 according to one embodiment will be described with reference to Figure 1. Figure 1 is a cross-sectional view showing an example of the configuration of the processing apparatus 10 according to one embodiment.

[0010] The processing apparatus 10 may be an apparatus that performs film deposition on a substrate W such as a semiconductor wafer by CVD (Chemical Vapor Deposition), or it may be an apparatus that performs etching. As shown in Figure 1, the processing apparatus 10 includes a processing container 1, a stage 2, a gas supply mechanism 3, an exhaust mechanism 4, and a control unit 5.

[0011] The processing container 1 is a vacuum container made of aluminum, for example, and capable of evacuating its interior to a vacuum (reduced pressure). The processing container 1 has a top wall 11, a bottom 12, and a side wall 13 connecting the top wall 11 and the bottom 12. The side wall 13 has a substantially cylindrical shape. The side wall 13 has an inlet / outlet for loading and unloading substrates W between the processing container 1 and an adjacent transport chamber, and a gate valve (neither shown) for opening and closing the inlet / outlet.

[0012] Stage 2 is disc-shaped and is made of a material such as aluminum nitride with embedded metal or metal mesh electrodes. Stage 2 also functions as a lower electrode. Stage 2 is supported by a support portion 23. The support portion 23 penetrates the bottom 12 of the processing container 1 near the center and is fixed to a lifting mechanism 24. Stage 2, which holds the substrate W, is provided at the top of the support portion 23. The support portion 23 may have an internal flow path. The internal flow path regulates the temperature of the support portion 23 and Stage 2 by passing a heat transfer medium such as cooling water through it.

[0013] At the bottom 12 of the processing container 1, for example, three transfer pins 14 are provided at positions corresponding to the stage 2. The stage 2 has through holes (not shown) formed to create a passage area for these transfer pins 14. The solid lines in Figure 1 illustrate the stage 2 at the processing position, and the dashed lines in Figure 1 illustrate the stage 2 at the transfer position. The processing position is the position where processing such as film deposition, described later, is performed on the substrate W. The transfer position is the position where the substrate W is transferred between the transport chamber and the stage 2. The lifting mechanism 24 raises and lowers the stage 2, thereby moving the stage 2 between the substrate W transfer position and the substrate W processing position. A heater 21 is embedded in the stage 2. The heater 21 is an example of a temperature control unit that adjusts the temperature of the substrate W.

[0014] A gas supply mechanism 3 is provided above the stage 2 on the top wall 11 of the processing container 1. The gas supply mechanism 3 has a shower plate 31 facing the stage 2 and a gas passage chamber 32 formed between the top wall 11 and the shower plate 31. A gas supply passage 34 is connected to the top wall 11. The upstream side of the gas supply passage 34 is connected to an upper gas supply unit 35. The upper gas supply unit 35 may include, for example, a source for supplying processing gas (reaction gas), a source for supplying cleaning gas to remove film accumulated in the processing container 1, a flow rate adjustment unit, etc. The upper gas supply unit 35 is an example of a processing gas supply unit that supplies processing gas into the processing container 1. The shower plate 31 has a plurality of gas discharge holes 33 that penetrate in the thickness direction and discharges processing gas in a shower-like manner toward the stage 2.

[0015] The shower plate 31 is connected to the high-frequency power supply 37 via a matching unit 36. High-frequency power is applied from the high-frequency power supply 37 between the shower plate 31, which also functions as an upper electrode, and the stage 2, which also functions as a lower electrode. Through capacitive coupling, plasma is generated from the processing gas supplied from the shower plate 31 to the processing space (hereinafter also referred to as the upper space S1).

[0016] An exhaust mechanism 4 is provided around the upper space S1, on the side wall portion 13 of the processing container 1, along the circumferential direction of the upper space S1. The exhaust mechanism 4 has an annular duct 41. The duct 41 is made of an insulating material. The duct 41 is fitted around the side wall portion 13 of the upper space S1, forming an annular passage 42 through which the processing gas discharged from the upper space S1 flows. In addition, a plurality of exhaust holes 43 are formed at the bottom of the duct 41, arranged in a ring shape overall. The exhaust holes 43 may consist of a plurality of circular holes arranged in the circumferential direction in a plan view. The exhaust holes 43 communicate the passage 42 and the upper space S1. The duct 41 is connected to an exhaust port (not shown) at one point, and the exhaust port is connected to an exhaust device (not shown). The upper space S1 of the processing container 1 is evacuated by the exhaust device through the exhaust port and duct 41. The exhaust hole 43 may be a single ring-shaped hole arranged circumferentially in a plan view.

[0017] Below the duct 41, a flat shelf section 15 is formed surrounding the stage 2. The shelf section 15 is provided with a partition ring 7 positioned with a gap between it and the stage 2 in the processing position and the outer ring 22 located on the periphery of the stage 2. The outer ring 22 is a ring-shaped member that surrounds the outer circumference of the stage 2 and is made of ceramic. The partition ring 7 is a ring-shaped member that surrounds the outer ring 22 (or the stage 2 if the outer ring 22 is not present) with a gap between them and the stage 2. Specifically, the outer ring 22 is a substantially cylindrical member that surrounds the outer circumference of the stage 2 and extends vertically below the lower surface of the stage 2. The partition ring 7 is positioned along the periphery of the outer ring 22 with a gap between it and the outer ring 22. The inner surface of the partition ring 7 extends along the outer surface of the outer ring 22 to a position corresponding to the side surface of the stage 2.

[0018] The outer ring 22 is an example of a first ring located at the periphery of the stage 2. The partition ring 7 is located with a gap provided between the stage 2 or a first ring located at the periphery of the stage 2, and is an example of a second ring that partitions the inside of the processing vessel 1 into an upper space S1 and a lower space S2.

[0019] The partition ring 7 partitions the upper space S1 and the lower space S2 by narrowing the width of the gap D (see FIG. 2) formed between the partition ring 7 and the periphery of the stage 2 during the processing of the substrate W. A sufficient space is ensured between the outer peripheral surface of the partition ring 7 and the side wall portion 13 of the processing vessel 1. Therefore, the outer peripheral surface of the partition ring 7 is in a non-contact arrangement with the side wall portion 13. The space between the outer peripheral surface of the partition ring 7 and the side wall portion 13 of the processing vessel 1 is an annular recess. The plurality of exhaust holes 43 are exhaust ports that open in an annular shape as a whole toward the space.

[0020] A drive unit 72 is provided on the outer peripheral surface of the partition ring 7 via a rod-shaped member 71. The rod-shaped member 71 penetrates the side wall portion 13 in the lateral direction and is connected to the drive unit 72 outside the processing vessel 1. The drive unit 72 drives the partition ring 7. Three or more rod-shaped members 71 and drive units 72 may be provided in the circumferential direction of the partition ring 7, respectively. The rod-shaped members 71 and the drive units 72 may be evenly arranged in the circumferential direction of the partition ring 7, respectively. The rod-shaped members 71 and the drive units 72 may be provided within the range of 3 to 12 in number in the circumferential direction of the partition ring 7, respectively. In the example of FIG. 1, four or more even numbers of rod-shaped members 71 and drive units 72 are provided, respectively.

[0021] During the processing of the substrate W, the stage 2 may reach a high temperature of 300°C or more. Therefore, the partition ring 7 may reach a temperature of about 300°C at most. Thus, the rod-shaped member 71 connecting the partition ring 7 and the drive unit 72 is formed of a type of ceramic or metal that can withstand a high temperature of about 300°C.

[0022] Three or more rod-shaped members 71 are provided in one-to-one correspondence with three or more drive units 72 (see Figure 3). The drive units 72 are driven to push or pull the corresponding rod-shaped members 71, thereby moving the partition ring 7. On the outer circumference of each rod-shaped member 71, two O-rings 73 are arranged as an example of sealing members to prevent air from mixing into the vacuum (reduced pressure) environment inside the processing container 1. Each rod-shaped member 71 may be provided with a mechanical stop mechanism, such as a protrusion, to limit the radial range of movement of each rod-shaped member 71 in order to prevent the partition ring 7 from coming into contact with the outer ring 22.

[0023] The lower gas supply unit 26 supplies purge gas such as nitrogen gas (hereinafter also referred to as "bottom purge gas") from the bottom 12 of the processing container 1 to the lower space S2. The lower gas supply unit 26 causes the bottom purge gas to flow upward from the lower space S2 to the upper space S1 through the annular gap D between the partition ring 7 and the outer ring 22. The lower gas supply unit 26 may be provided for each gas supply hole 25 provided in the bottom 12. One lower gas supply unit 26 may supply bottom purge gas from multiple gas supply holes 25.

[0024] The processing device 10 may have sensors for detecting the dimensions of the gap D. At least three sensors are provided at positions corresponding to the circumferential direction of the gap D. In the example in Figure 1, two of the three or more sensors, sensors 60 and 61, are shown.

[0025] The control unit 5 processes computer-executable instructions that cause the processing unit 10 to perform the various processes described herein. The control unit 5 may be configured to control each element of the processing unit 10 to perform the various processes described herein. In one embodiment, part or all of the control unit 5 may be included in the processing unit 10. The control unit 5 is implemented, for example, by a computer. The control unit 5 may include a processing unit, a storage unit, and a communication interface. The functions implemented by the processing unit described herein may be implemented in a circuit or processing circuitry, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), conventional circuitry, and / or a combination thereof, programmed to implement the functions described herein. A processor is considered a circuit or processing circuit, including transistors and other circuitry. A processor may be a programmed processor that executes a program stored in a storage unit. This program may be pre-stored in the storage unit and may be retrieved via a medium when needed. The acquired program is stored in the memory unit and read from the memory unit and executed by the processing unit. The medium may be various storage media readable by a computer, or it may be a communication line connected to a communication interface. The memory unit may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the processing unit 10 via a communication line such as a LAN (Local Area Network). In this disclosure, circuits, units, and means are hardware programmed to realize or configured to perform the functions described.The hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If the hardware is a processor that is considered to be a type of circuit, the circuit, means, or unit is a combination of the hardware and the software used to constitute the hardware and / or processor.

[0026] (First Embodiment) An example of processing performed by the processing unit 10 according to the first embodiment will be described with reference to Figures 1 and 2. Figure 2 is an enlarged view showing the area around stage 2 according to the first embodiment. In the processing unit 10 according to the first embodiment, a drive unit 72A is used as an example of the drive unit 72 shown in Figure 1. The other configurations of the processing unit 10 are the same. The drive unit 72A is, for example, a motor.

[0027] Once the substrate W is loaded into the processing container 1 and held on the stage 2 at the transfer position shown by the dashed line in Figure 1, the control unit 5 raises the stage 2 to the processing position shown by the solid line in Figure 1 by raising the lifting mechanism 24. The control unit 5 supplies a bottom purge gas, such as nitrogen gas, to the lower space S2 from the lower gas supply unit 26. The control unit 5 also controls the pressure inside the processing container 1 and heats the substrate W with the heater 21. Then, the control unit 5 supplies a processing gas, such as for film deposition, to the upper space S1 from the upper gas supply unit 35 and supplies high-frequency power from the high-frequency power supply 37. As a result, the substrate W is subjected to processing, such as film deposition, in the upper space S1 by plasma generated from the processing gas by the high-frequency power.

[0028] During processing of the substrate W, the processing gas is supplied in a shower-like manner to the substrate W on the stage 2 in the upper space S1 via a plurality of gas discharge holes 33 of the shower plate 31. The processing gas flows along the surface of the substrate W toward the outer periphery, and then flows into a plurality of annularly arranged exhaust holes 43 that open at the bottom of a duct 41 located in the side wall portion 13, and is exhausted. The radial width H (corresponding to the diameter) of the exhaust holes 43 shown in Figure 2 may be the same width across all of the exhaust holes 43. The width H of the exhaust holes 43 that are relatively close to the exhaust port may be narrower than the width H of the exhaust holes 43 that are relatively far from the exhaust port.

[0029] The annular gap D between the outer ring 22 and the partition ring 7 is the radial distance between the outer surface of the substantially cylindrical outer ring 22 and the inner surface of the partition ring 7. The lower gas supply unit 26 causes a bottom purge gas, such as nitrogen gas, to flow upward from the lower space S2 to the upper space S1 through the annular gap D. This prevents the processing gas supplied from the shower plate 31 to the upper space S1 from flowing back into the lower space S2 below the stage 2 through the gap D. In other words, the processing gas flows from a plurality of annularly arranged exhaust holes 43 below the duct 41 into the passageway 42 and is exhausted from the exhaust port. This prevents film formation on the lower side of the stage 2, which occurs when plasma flows back into the lower space S2 through the gap D.

[0030] When the preset processing time for the substrate W has elapsed and the processing of the substrate W is complete, the control unit 5 stops the supply of processing gas and high-frequency power, adjusts the pressure inside the processing container 1, and then controls the discharge of the processed substrate W from the processing container 1.

[0031] The central axis Ax shown in Figure 1 is the axis passing through the center of the processing container 1. That is, the central axis Ax passes through the centers of the top wall 11 and the bottom 12 of the processing container 1. When the central axis Ax coincides with the central axis of the stage 2, outer ring 22, and partition ring 7, the four parts of the processing container 1, stage 2, outer ring 22, and partition ring 7 are arranged concentrically. In this case, the dimension of the gap D between the outer ring 22 and the partition ring 7 at the periphery of the stage 2 is equal at any position in the circumferential direction of the annular gap D. Therefore, the bottom purge gas is supplied uniformly from the lower space S2 to the periphery of the stage 2 in the upper space S1 through the gap D. When the bottom purge gas is supplied uniformly to the periphery of the stage 2 through the annular gap D, the exhaust of the processing gas from the duct 41 becomes uniform in the circumferential direction, and the uniformity of the processing of the substrate W is improved, such as the thickness of the film formed on the substrate W becoming uniform in the circumferential direction. In other words, if the bottom purge gas supplied to the periphery of stage 2 through gap D is non-uniform in the circumferential direction, the exhaust of the processing gas from duct 41 will also be non-uniform in the circumferential direction, resulting in a less uniform processing of the substrate W, such as the thickness of the film formed on the substrate W not being uniform in the circumferential direction. In short, the circumferential bias of the bottom purge gas passing through gap D affects the uniform processing of the substrate W.

[0032] The circumferential bias of the bottom purge gas is sometimes influenced by the position of the exhaust port, but is mainly determined by the positional relationship of four parts: the processing container 1, the stage 2, the outer ring 22, and the partition ring 7. If the position of the exhaust port is irrelevant, and these four parts are arranged concentrically, there will be no circumferential bias in the bottom purge gas, and the processing of the substrate W will be uniform. However, it is difficult to always arrange these four parts concentrically for the following reasons.

[0033] For example, during the processing of the substrate W, Stage 2 rises to the processing position shown by the solid line in Figure 1, and after processing of the substrate W, it descends to the transfer position shown by the dashed line in Figure 1. In this way, Stage 2 is raised and lowered for each processing of the substrate W. Each time Stage 2 moves up and down, the gap D between the outer ring 22 and the partition ring 7 changes. From the above, it is difficult to move the central axis of Stage 2 to coincide with the central axis Ax of the processing container 1, or to keep the four parts arranged concentrically at all times. As a result, the gap D between the outer ring 22 and the partition ring 7 becomes non-uniform in the circumferential direction, causing a circumferential bias in the bottom purge gas, and the uniformity of the processing of the substrate W deteriorates. Such problems are particularly likely to occur in a processing apparatus 10 having an exhaust mechanism 4 in which an annular duct 41 has one exhaust port connected to an exhaust device, and gas is exhausted from one exhaust port through multiple annularly arranged exhaust holes 43 (or annular (slit-shaped) exhaust holes) and an annular passage 42.

[0034] In response to this, one could consider improving the uniformity of the substrate W processing by rotating Stage 2 during the processing of the substrate W. However, if a rotation mechanism is provided on Stage 2, there will be limitations on the temperature at which Stage 2 with the rotation mechanism can be used, which may prevent the substrate W from undergoing the desired high-temperature processing (for example, 650°C or higher). In addition, providing a rotation mechanism on Stage 2 will increase the manufacturing cost of the equipment.

[0035] As an alternative method, the inventor conducted experiments in which the film deposition process was performed by changing the flow rate of the bottom purge gas. The results of the experiment showed that increasing the flow rate of the bottom purge gas improved the uniformity of the film thickness on the substrate W to some extent, but controlling only the flow rate of the bottom purge gas resulted in non-uniform film thickness in the circumferential direction on the substrate W. On the other hand, the results of this experiment showed that there is a correlation between the circumferential thickness of the film formed on the substrate W and the circumferential bias of the bottom purge gas. Therefore, it was found that the non-uniformity of the film thickness is caused by the circumferential bias of the bottom purge gas, and that if the circumferential bias of the bottom purge gas can be controlled, the uniformity of the film thickness can be improved without changing the flow rate of the bottom purge gas.

[0036] Therefore, the processing apparatus 10 corrects the circumferential bias of the bottom purge gas supplied from the gap D. As a result, the processing apparatus 10 can improve the uniformity of the substrate W processing without providing a rotating mechanism on the stage 2.

[0037] (Method for correcting circumferential bias of bottom purge gas) A method for correcting the circumferential bias of the bottom purge gas using the processing apparatus 10 will be described with reference to Figures 3 and 4. Figures 3 and 4 are plan views showing the periphery of the stage 2 according to the first embodiment. Figures 3 and 4 show examples where there are three rod-shaped members 71 and three drive units 72A. Note that the number of rod-shaped members 71 and drive units 72A is at least three, but may be six or more. The more rod-shaped members 71 and drive units 72A there are, the higher the uniformity of the processing of the substrate W can be.

[0038] In the examples in Figures 3 and 4, the three drive units 72A are shown separately as drive units 72a, 72b, and 72c. Similarly, the three rod-shaped members 71 are shown separately as rod-shaped members 71a, 71b, and 71c. Furthermore, in the examples in Figures 3 and 4, the illustration of members other than the stage 2, outer ring 22, partition ring 7, rod-shaped members 71a, 71b, and 71c, and drive units 72a, 72b, and 72c is omitted. The positions and sizes of the multiple exhaust holes 43 are indicated by dotted lines.

[0039] The drive unit 72a is provided in correspondence with the rod-shaped member 71a and pushes the partition ring 7 from one direction (hereinafter referred to as the "first direction") when the outer circumference of the partition ring 7 is divided into three parts. The drive unit 72b is provided in correspondence with the rod-shaped member 71b and pushes the partition ring 7 from the other direction (hereinafter referred to as the "second direction") when the outer circumference of the partition ring 7 is divided into three parts. The drive unit 72c is provided in correspondence with the rod-shaped member 71c and pushes the partition ring 7 from the remaining direction (hereinafter referred to as the "third direction") when the outer circumference of the partition ring 7 is divided into three parts. However, it is not limited to this, and the drive units 72a, 72b, and 72c may also pull the partition ring 7 from each direction.

[0040] In the examples in Figures 3 and 4, an example is given in which any of the drive units 72a, 72b, or 72c are driven, but two or all of the drive units 72a, 72b, or 72c may be driven. Also, in the examples in Figures 3 and 4, in order to show that drive unit 72a is driven, the rod-shaped member 71a is in contact with the partition ring 7, while the rod-shaped members 71b and 71c are not in contact with the partition ring 7. However, this is not limited to this, and all of the drive units 72a, 72b, and 72c may be in contact with the partition ring 7.

[0041] The control unit 5 controls at least one of the drive units 72a, 72b, and 72c to move the partition ring 7 and adjust the dimensions of the gap D. This improves the uniformity of the processing of film thickness and other elements on the substrate W. The control unit 5 may also control at least one of the drive units 72a, 72b, and 72c to move the partition ring 7 so that its central axis coincides with the central axis of the stage 2 or the outer ring 22. However, the control of the control unit 5 is not limited to this.

[0042] In the example shown in Figure 3, the control unit 5 supplies current to the drive unit 72a to control it and push the outer circumference of the partition ring 7 from the first direction. At this time, the control unit 5 does not supply current to the drive units 72b and 72c. Therefore, the partition ring 7 is not pushed from the second and third directions. As a result, the dimension of the gap D is adjusted as the partition ring 7 moves in the first direction. For example, in the example shown in Figure 3, the partition ring 7 moves so that its central axis coincides with the central axis of the stage 2 or the outer ring 22. As a result, the gap D1 corresponding to the position pushed by the rod-shaped member 71a becomes equal to the gap D4 on the opposite side of gap D1. This corrects the circumferential bias of the bottom purge gas, thereby improving the uniformity of the processing of film thickness, etc., on the substrate W. The control unit 5 may also control the drive units 72a, 72b, and 72c to change the action of pushing the partition ring 7 with the rod-shaped members 71a, 71b, and 71c to a pulling action.

[0043] In the following examples in Figures 3 and 4, the diameter of each of the multiple exhaust holes 43 arranged in a ring is represented by a dotted line as width H for illustrative purposes. In reality, multiple exhaust holes 43 having a diameter equal to the width of the dotted line may be arranged at predetermined intervals within the dotted line frame. In the example in Figure 3, the radial width H (corresponding to the diameter) of the exhaust holes 43 is equal around the entire circumference. For example, the radial width H1 of the exhaust hole 43 corresponding to the position of the rod-shaped member 71a is equal to the radial width H2 of the exhaust hole 43 located opposite it. In contrast, the radial width H of the exhaust holes 43 may differ in the circumferential direction. For example, the exhaust holes 43 shown in Figure 4 are designed so that width H1 is the narrowest and width H2 of the exhaust hole 43 located opposite it is the widest. In this case, the control unit 5 may move the partition ring 7 to make the radial gap D1 corresponding to the exhaust hole 43 with width H1 the narrowest and the radial gap D4 corresponding to the exhaust hole 43 with width H2 the widest. As a result, the processing apparatus 10 can correct the circumferential bias of the bottom purge gas by designing the width H of the exhaust hole 43 and controlling the gap D, thereby improving the uniformity of processing on the substrate W.

[0044] The control unit 5 may control the drive units 72a, 72b, and 72c to simulate rotation of the radial width distribution of the gap D. For example, the control unit 5 may periodically drive the drive units 72a, 72b, and 72c in that order with varying timings, thereby periodically pushing the rod-shaped members 71a, 71b, and 71c in that order and moving the partition ring 7. As a result, the partition ring 7 is periodically pushed from three directions, causing the radial width distribution of the gap D to periodically change in the circumferential direction. This periodically corrects the circumferential bias of the bottom purge gas and improves the uniformity of the processing on the substrate W.

[0045] The sensor, including the sensor 61 shown in Figure 2, is positioned on the lower surface of the shower plate 31 to correspond to the gap D. However, the sensor is not limited to this position and may be provided on at least one of the top wall 11 or bottom 12 of the processing container 1. The sensor is an example of a detection unit that detects the dimensions of the gap D. Alternatively, the sensor may be provided on the side wall 13 of the processing container 1, and the dimensions of the gap D may be detected by measuring the step formed by the partition ring 7 and the outer ring 22. Three or more detection units may be provided at positions corresponding to the circumferential direction of the partition ring 7. The control unit 5 may control the movement of the partition ring 7 based on the dimensions of the gap D detected by the sensor.

[0046] The movement of the partition ring 7 may be performed when the processing device 10 is installed in a factory or other facility, or during trial operation of the processing device 10. The movement of the partition ring 7 may be performed before the substrate W is brought in or before the substrate W is processed. The movement of the partition ring 7 may be performed during or after the processing of the substrate W, based on values ​​detected from the sensor.

[0047] (Effects and workings of the first embodiment) In the first embodiment, the control unit 5 controls the drive unit 72A (drive units 72a, 72b, 72c) to move the partition ring 7 using the rod-shaped members 71a, 71b, 71c. This allows the processing apparatus 10 to adjust the gap D between the partition ring 7 and the outer ring 22. This corrects the circumferential bias of the bottom purge gas flowing through the gap D and improves the uniformity of processing on the substrate W.

[0048] (Second Embodiment) Next, an example of processing performed by the processing apparatus 10 according to the second embodiment will be described with reference to Figures 5 and 6. Figure 5 is an enlarged view showing the periphery of stage 2 according to the second embodiment. Figure 6 is a plan view showing the periphery of stage 2 according to the second embodiment.

[0049] As shown in Figure 5, in the processing apparatus 10 according to the second embodiment, a drive unit 72B is used as an example of the drive unit 72 shown in Figure 1. The drive unit 72B may be a solenoid actuator having an electromagnetic valve that opens and closes a valve body by the attractive force of an electromagnet. Alternatively, the drive unit 72B may be a compressed air actuator that opens and closes a valve body by supplying and exhausting compressed air as the controlled fluid. The configuration and operation when the drive unit 72B is a compressed air actuator will be described below.

[0050] A drive unit 72B is provided on the outer circumferential surface of the partition ring 7 via a rod-shaped member 71. The rod-shaped member 71 penetrates the side wall portion 13 laterally and is connected to the drive unit 72B outside the processing container 1. The drive unit 72B moves the partition ring 7 by pushing or pulling the rod-shaped member 71. Three or more rod-shaped members 71 and drive units 72B may each be provided in the circumferential direction of the partition ring 7. The rod-shaped members 71 and drive units 72B may each be evenly distributed in the circumferential direction of the partition ring 7. The number of rod-shaped members 71 and drive units 72B may each be provided in the circumferential direction of the partition ring 7 in a range of 3 to 12.

[0051] The drive unit 72B has a piston 74 and a spring 75 inside a hollow housing. The piston 74 divides the inside of the housing into space U1 and space U2. Compressed air or pneumatic fluid is supplied to space U1 from the outside. On the space U2 side, the spring 75 is attached between the piston 74 and the housing. The piston 74 passes through the housing and is connected to a rod-shaped member 71.

[0052] The control unit 5 controls the drive unit 72B. The control unit 5 supplies a medium such as compressed air to the space U1 (Figure 5(1)). The medium pushes the piston 74, compressing the spring 75, and as a result, the rod-shaped member 71 is pushed out by the force of the spring 75. As a result, the partition ring 7 moves so as to be pushed out to the position corresponding to the rod-shaped member 71.

[0053] When the control unit 5 stops the drive by the drive unit 72B, it stops supplying a medium such as compressed air to the space U1 and discharges the medium from the space U1 (Figure 5(2)). As a result, the force of the spring 75 pushes the piston 74 back towards the space U1, and the rod-shaped member 71 is pulled in. Consequently, the partition ring 7 moves to a position corresponding to the rod-shaped member 71 so that it is pulled in. In addition to the configuration with the spring 75 as described above, the drive unit 72B can also be a type that is driven only by supplying and discharging air, or any other general drive system.

[0054] In the examples in Figures 6(a) to (c), the three drive units 72B are shown separately as drive units 72a, 72b, and 72c. Similarly, the three rod-shaped members 71 are shown separately as rod-shaped members 71a, 71b, and 71c. In addition, in the examples in Figures 6(a) to (c), the illustration of members other than the stage 2, outer ring 22, partition ring 7, rod-shaped members 71a, 71b, 71c, and drive units 72a, 72b, and 72c is omitted. The outer ring 22 and partition ring 7 are assumed to be arranged concentrically. For example, in the initial state, the dimensions of the gaps D1, D2, and D3 corresponding to the rod-shaped members 71a, 71b, and 71c, which are gap D, are equal.

[0055] The control unit 5 controls one of the drive units 72a, 72b, or 72c in an adjacent order to move the partition ring 7 and adjust the dimensions of the gap D. The control unit 5 supplies the medium to the space U1 of one of the drive units 72a, 72b, or 72c indicated as "ON". The control unit 5 does not supply the medium to the space U1 of the drive unit 72a, 72b, or 72c indicated as "OFF", and discharges the medium from that space U1.

[0056] In Figure 6(a), the control unit 5 controls the drive unit 72a to "ON" and the drive units 72b and 72c to "OFF". As a result, the rod-shaped member 71a is pushed out, and the dimension of the gap D1 corresponding to the rod-shaped member 71a becomes narrower than the dimensions of the gaps D2 and D3 corresponding to the rod-shaped members 71b and 71c.

[0057] After a predetermined time has elapsed, in Figure 6(b), the control unit 5 controls the drive unit 72b to "ON" and the drive units 72a and 72c to "OFF". As a result, the rod-shaped member 71b is pushed out, and the dimension of the gap D2 corresponding to the rod-shaped member 71b becomes narrower than the dimensions of the gaps D1 and D3 corresponding to the rod-shaped members 71a and 71c.

[0058] Furthermore, after a predetermined time has elapsed, in Figure 6(c), the control unit 5 controls the drive unit 72c to "ON" and the drive units 72a and 72b to "OFF". As a result, the rod-shaped member 71c is pushed out, and the dimension of the gap D3 corresponding to the rod-shaped member 71c becomes narrower than the dimensions of the gaps D1 and D2 corresponding to the rod-shaped members 71a and 71b.

[0059] The control unit 5 periodically repeats the operations shown in Figures 6(a) to (c) in this order. This allows the control unit 5 to control the drive units 72a, 72b, and 72c to move the partition ring 7 (simulating rotation of the gap D distribution), thereby changing the dimensions of the gap D circumferentially over time. For example, the control unit 5 controls the drive units 72a, 72b, and 72c to periodically move the partition ring 7 so that its center C is eccentric from the center O of the stage 2, and it rotates circumferentially as shown by the dotted lines in Figures 6(a) to (c). By repeating the "ON" positions of the drive units 72a, 72b, and 72c in this order, the narrowest portion of the gap D rotates periodically circumferentially over time. Thus, the dimensions of the gap D can be changed circumferentially over time by a movement that simulates eccentric rotation of the partition ring 7 relative to the stage 2.

[0060] The control unit 5 may control the drive unit 72B to move the partition ring 7 based on the dimensions of the gap D detected by the sensor. For example, the processing unit 10 may be equipped with multiple sensors in the circumferential direction corresponding to the gap D, which detect when the stage 2 or outer ring 22 and the partition ring 7 are within a certain distance of each other. In this case, the control unit 5 may control the rotation in the circumferential direction of the position where the stage 2 or outer ring 22 and the partition ring 7 are within a certain distance of each other, based on the detection results of the multiple sensors.

[0061] In this way, the control unit 5 operates one of the drive units 72a, 72b, or 72c, causing the radial width distribution of the gap D to change periodically in the circumferential direction, thereby simulating rotation of the radial width distribution of the gap D. This corrects the circumferential bias of the bottom purge gas, thereby improving the uniformity of the processing on the substrate W. Furthermore, by using the less expensive drive unit 72B instead of a motor, manufacturing costs can be reduced.

[0062] The control unit 5 may perform the operations shown in Figures 6(a) to (c) in the order of Figures 6(a), (b), and (c), or in the order of Figures 6(a), (c), and (b). Furthermore, the control unit 5 may start control from any of Figures 6(a), (b), or (c). This allows the gap D between the partition ring 7 and the outer ring 22 to be periodically changed clockwise or counterclockwise. By simulating rotation of the amount of bottom purge gas flowing through the gap D in this way, the uniformity of the substrate W processing can be improved without rotating the stage 2.

[0063] The control unit 5 may switch the timing of turning on any of the drive units 72a, 72b, or 72c, for example, every 2 to 3 seconds. For example, the control unit 5 may turn on drive unit 72a, then turn it off 2 seconds later and turn on drive unit 72b, and then turn off drive unit 72b 2 seconds later and turn on drive unit 72c. By optimizing the switching time, the control unit 5 can more effectively improve the uniformity of the processing of the substrate W without rotating the stage 2.

[0064] Furthermore, the control unit 5 periodically repeats the operations shown in Figures 6(a) to (c) in this order, and the operation to change the dimension of the gap D in the circumferential direction over time may be performed at least during the processing of the substrate W. In addition, this operation may be performed during times when the substrate W is not being processed.

[0065] (Effects and Effects of the Second Embodiment) In the second embodiment, the control unit 5 controls the drive unit 72B (drive units 72a, 72b, 72c) to repeatedly push out the partition ring 7 from three directions in sequence using the rod-shaped members 71a, 71b, and 71c. As a result, the processing apparatus 10 changes the dimension of the gap D between the partition ring 7 and the outer ring 22 in the circumferential direction. This corrects the circumferential bias of the bottom purge gas flowing through the gap D over time, thereby improving the uniformity of the processing on the substrate W.

[0066] Furthermore, as the drive units 72a, 72b, and 72c switch on in sequence, the narrower portion of the gap D rotates periodically. This motion, which simulates eccentric rotation of the partition ring 7 relative to the stage 2, periodically changes the dimensions of the gap D in the circumferential direction over time. This corrects the circumferential bias of the bottom purge gas flowing through the gap D over time, thereby further improving the uniformity of the processing on the substrate W.

[0067] The first and second embodiments describe a method for adjusting the gap D between the outer ring 22 and the partition ring 7, but are not limited thereto. If the outer ring 22 is not provided on the periphery of the stage 2, the gap D between the stage 2 and the partition ring 7 may be adjusted by the method for correcting the circumferential bias of the bottom purge gas as shown in the first and second embodiments.

[0068] (Processing method) As described above, the method (processing method) for correcting the circumferential bias of the bottom purge gas is performed in a processing apparatus 10 having a processing container 1, a stage 2 or a first ring (for example, an outer ring 22) located on the periphery of the stage 2 that holds the substrate W inside the processing container 1 and has a temperature adjustment unit for adjusting the temperature of the substrate W, a processing gas supply unit (for example, an upper gas supply unit 35) that supplies processing gas into the processing container 1, a second ring (for example, a partition ring 7) that is positioned with a gap D between it and the stage 2 or the first ring and divides the inside of the processing container 1 into an upper space S1 and a lower space S2, and a drive unit 72 connected to the second ring and driving the second ring.

[0069] The processing method includes (A) placing the substrate W on the stage 2, (B) setting the substrate W to a predetermined processing temperature using the temperature control unit, (C) supplying processing gas from the processing gas supply unit to process the substrate W, and (D) driving the drive unit 72 to move the second ring and adjust the gap D, at least during the processing of the substrate W. This corrects the circumferential bias of the bottom purge gas flowing through the gap D and improves the uniformity of the processing on the substrate W.

[0070] (Other variations) As described above, the processing apparatus 10 has a duct 41 having a plurality of exhaust holes 43 arranged in a ring shape on the side wall portion 13 of the upper space S1. In the processing method (D) above, the control unit 5 may control the drive unit 72 to move the second ring and relatively control the dimensions of the gap D according to the amount of exhaust in the circumferential direction from the plurality of exhaust holes 43. For example, the radial width H (corresponding to the diameter) of the exhaust holes 43 shown in Figure 2 may be designed to be uniform in the circumferential direction in which the exhaust holes 43 are arranged, as shown in Figure 3, or it may be designed to be non-uniform, as shown in Figure 4. Then, the dimensions of the gap D may be controlled based on the relative relationship between the width H and the gap D.

[0071] For example, if the exhaust port is located at a position corresponding to the rod-shaped member 71a in Figure 4, the width H of the exhaust hole 43 may be made wider as it moves away from the exhaust port, thereby allowing the gas to flow uniformly through the annular passage 42 of the duct 41. In this case, the width H1 of the exhaust hole 43 on the exhaust port side is narrowest, and the width H2 of the exhaust hole 43 on the opposite side of the exhaust port is widest. The control unit 5 may then relatively control the gap D to correspond to the width H of the exhaust hole 43. For example, the control unit 5 may relatively reduce the dimension of the gap D on the exhaust port side so that the value of the gap D1 relative to the width H1 (a value equivalent to D1 / H1) is equal to the value of the gap D4 relative to the width H2 (a value equivalent to D4 / H2). This corrects the circumferential bias of the bottom purge gas flowing through the gap D and improves the uniformity of the processing on the substrate W.

[0072] Furthermore, in cases where the dimensions and arrangement of the exhaust holes are not provided considering the position of the exhaust port, such as when the radial width H (corresponding to the diameter) of the exhaust holes 43 is uniform in the circumferential direction, or when the arrangement density of the exhaust holes 43 is uniform, the control unit 5 may control the dimensions of the gap D itself considering the position of the exhaust port. For example, the control unit 5 may reduce the dimensions of the gap D itself so that the gap D1 closer to the exhaust port is smaller than the gap D4 further away from the exhaust port. This also corrects the circumferential bias of the bottom purge gas flowing through the gap D and improves the uniformity of the processing on the substrate W.

[0073] In the processing method described in (D) above, the control unit 5 may move the second ring to control the dimension of the gap D. Alternatively, in (D) above, the control unit 5 may simulate rotation of the distribution of the gap D to change the dimension of the gap D in the circumferential direction over time. The control unit 5 may also simulate repeated rotation of the distribution of the gap D to periodically change the dimension of the gap D.

[0074] The technology described herein is not limited to applications to a processing apparatus 10 in which a single substrate W is placed on a single stage 2 provided in a processing container 1 for processing. For example, it can be applied to a processing apparatus that processes multiple substrates W simultaneously. Even in such a processing apparatus, the technology can be applied if there is a second ring that can adjust the gap D between the stage 2 or a first ring located on the periphery of the stage 2.

[0075] Furthermore, the movement of the partition ring 7 may be carried out by an arm (not shown) capable of moving the partition ring 7 horizontally (perpendicular to the central axis Ax), and a drive unit that drives the arm, instead of the rod-shaped member 71 and the drive unit 72. This allows the control unit 5 to adjust the gap D by controlling the drive unit to move the arm two-dimensionally in the horizontal direction. This corrects the circumferential bias of the bottom purge gas and improves the uniformity of the processing on the substrate W.

[0076] Furthermore, the drive unit 72A, which uses a motor, and the drive unit 72B, which uses a compressed air or solenoid actuator, are examples of the drive unit 72, but are not limited thereto. The drive unit 72 may, for example, drive the rod-shaped member 71 by ultrasonic waves.

[0077] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0078] Furthermore, the following additional information is disclosed regarding the above embodiments. <Note> (1) Processing container and A stage for holding the substrate within the processing container or a first ring located on the periphery of the stage, A second ring is positioned with a gap between it and the stage or the first ring, and divides the processing container into an upper space and a lower space. A drive unit connected to the second ring and driving the second ring, A processing device. (2) The apparatus according to (1), wherein three or more drive units are provided in the circumferential direction of the second ring. (3) The drive unit has a control unit that controls the drive unit, The processing apparatus according to (1) or (2), wherein the control unit controls the drive unit to move the second ring and adjust the size of the gap. (4) It has a detection unit that detects the dimensions of the gap, The processing apparatus according to (3), wherein the control unit controls the drive unit to move the second ring based on the dimensions of the gap detected by the detection unit. (5) The apparatus according to (4), wherein three or more detection units are provided at positions corresponding to the circumferential direction of the second ring. (6) It has a lower gas supply unit that supplies purge gas to the lower space, The apparatus according to any one of (1) to (5), wherein the lower gas supply unit causes the purge gas to flow from the lower space to the upper space through the gap. (7) Processing container and A stage having a temperature control unit that holds the substrate within the processing container and adjusts the temperature of the substrate, or a first ring located on the periphery of the stage, A processing gas supply unit that supplies processing gas into the processing container, A second ring is positioned with a gap between it and the stage or the first ring, and divides the processing container into an upper space and a lower space. This is performed in a processing apparatus having a drive unit connected to the second ring and for driving the second ring, (A) Placing the substrate on the stage, (B) The temperature control unit sets the substrate to a predetermined processing temperature, (C) The processing gas is supplied from the processing gas supply unit and the substrate is processed, (D) At least during the processing of the substrate, the drive unit is driven to move the second ring and adjust the gap, A processing method that includes this. (8) The processing apparatus has a control unit that controls the drive unit, The processing method according to (7), wherein in (D), the control unit controls the drive unit to move the second ring and changes the dimension of the gap in the circumferential direction over time. (9) The processing method according to (8), wherein in (D), the control unit controls the drive unit to move the second ring so that the center of the second ring rotates circumferentially eccentrically from the center of the stage, and the dimensions of the gap change circumferentially over time. (10) The processing container has a duct with multiple exhaust holes arranged in a ring shape on the side wall of the upper space, The processing method according to (8), wherein in (D), the control unit controls the drive unit to move the second ring and relatively controls the dimensions of the gap according to the amount of exhaust from the plurality of exhaust holes. (11) The processing method described in (10) above, wherein the control unit rotates the distribution of the gaps to change the dimensions of the gaps in the circumferential direction over time. (12) The processing method described in (11) above, wherein the control unit rotates the distribution of the gap repeatedly in a simulated manner to periodically change the dimensions of the gap. (13) The processing apparatus has three or more detection units provided at positions corresponding to the circumferential direction of the second ring, and has a detection unit for detecting the dimension of the gap, The processing method according to any one of (8) to (12), wherein in (D) above, the control unit controls the drive unit to move the second ring based on the dimensions of the gap detected by three or more detection units. [Explanation of Symbols]

[0079] 1…Processing container, 2…Stage, 3…Gas supply mechanism, 4…Exhaust mechanism, 5…Control unit, 7…Partition ring, 22…Outer ring, 31…Shower plate, 41…Duct, 42…Passage channel, 43…Exhaust hole, 71…Rod-shaped member, 72…Drive unit, W…Substrate

Claims

1. Processing container and A stage for holding the substrate within the processing container or a first ring located on the periphery of the stage, A second ring is positioned with a gap between it and the stage or the first ring, and divides the processing container into an upper space and a lower space. A drive unit connected to the second ring and driving the second ring, A processing device.

2. The apparatus according to claim 1, wherein three or more drive units are provided in the circumferential direction of the second ring.

3. The drive unit has a control unit that controls the drive unit, The apparatus according to claim 1, wherein the control unit controls the drive unit to move the second ring and adjust the size of the gap.

4. It has a detection unit that detects the dimensions of the gap, The processing apparatus according to claim 3, wherein the control unit controls the drive unit to move the second ring based on the dimensions of the gap detected by the detection unit.

5. The apparatus according to claim 4, wherein three or more detection units are provided at positions corresponding to the circumferential direction of the second ring.

6. It has a lower gas supply unit that supplies purge gas to the lower space, The apparatus according to any one of claims 1 to 5, wherein the lower gas supply unit causes the purge gas to flow from the lower space to the upper space through the gap.

7. Processing container and A stage having a temperature control unit that holds the substrate within the processing container and adjusts the temperature of the substrate, or a first ring located on the periphery of the stage, A processing gas supply unit that supplies processing gas into the processing container, A second ring is positioned with a gap between it and the stage or the first ring, and divides the processing container into an upper space and a lower space. This is performed in a processing apparatus having a drive unit connected to the second ring and for driving the second ring, (A) Placing the substrate on the stage, (B) The temperature control unit sets the substrate to a predetermined processing temperature, (C) The processing gas is supplied from the processing gas supply unit and the substrate is processed, (D) At least during the processing of the substrate, the drive unit is driven to move the second ring and adjust the gap, A processing method that includes this.

8. The processing apparatus has a control unit that controls the drive unit, The processing method according to claim 7, wherein in (D) above, the control unit controls the drive unit to move the second ring and changes the dimension of the gap in the circumferential direction over time.

9. The processing method according to claim 8, wherein in (D) above, the control unit controls the drive unit to move the second ring such that the center of the second ring rotates circumferentially eccentrically from the center of the stage, and the dimensions of the gap change circumferentially over time.

10. The processing container has a duct with multiple exhaust holes arranged in a ring shape on the side wall of the upper space, The processing method according to claim 8, wherein in (D) above, the control unit controls the drive unit to move the second ring and relatively controls the dimensions of the gap according to the amount of exhaust from the plurality of exhaust holes.

11. The processing method according to claim 10, wherein the control unit rotates the distribution of the gaps to change the dimensions of the gaps in the circumferential direction over time.

12. The processing method according to claim 11, wherein the control unit rotates the distribution of the gaps repeatedly in a simulated manner to periodically change the dimensions of the gaps.

13. The processing apparatus has three or more detection units provided at positions corresponding to the circumferential direction of the second ring, and has a detection unit for detecting the dimension of the gap. The processing method according to claim 8, wherein in (D) above, the control unit controls the drive unit to move the second ring based on the dimensions of the gap detected by three or more detection units.

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