Electro-optic modulator
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SMART PHOTONICS HLDG BEVERAGE
- Filing Date
- 2026-04-17
- Publication Date
- 2026-07-24
Smart Images

Figure 2026121374000001_ABST
Abstract
Claims
1. An electro-optic modulator for an optical integrated circuit, circuit board and A first waveguide on the first portion of the substrate, A second waveguide on the second portion of the substrate, A first electrode in contact with the first waveguide, wherein the first waveguide is located between the first electrode and the first portion of the substrate, A second electrode in contact with the second waveguide, wherein the second waveguide is located between the second electrode and the second portion of the substrate, The electro-optic modulator comprising the above-mentioned features.
2. The electro-optic modulator according to claim 1, wherein the first distance between the first electrode and the first portion of the substrate is substantially the same as the second distance between the second electrode and the second portion of the substrate, and the first distance and the second distance are each perpendicular to the optical propagation axis of the first waveguide.
3. The electro-optic modulator according to any prior claim, wherein the surface of the first waveguide in contact with the first electrode is substantially coplanar with the surface of the second waveguide in contact with the second electrode.
4. An electro-optic modulator according to any prior claim, comprising an electrical insulator between the first waveguide and the second waveguide.
5. An electro-optic modulator according to any prior claim, comprising at least one of a fluid, gas, or air between the first waveguide and the second waveguide.
6. At least one of the first waveguide or the second waveguide is, The portion of the n-type semiconductor in contact with the substrate, The portion of the intrinsic semiconductor on the portion of the n-type semiconductor, A portion of the first p-type semiconductor on the portion of the intrinsic semiconductor, A portion of a second p-type semiconductor located on the portion of the first p-type semiconductor and in contact with the first electrode, An electro-optic modulator according to any prior claim, including the one described in any prior claim.
7. At least one of the first waveguide or the second waveguide is, The portion of the first n-type semiconductor in contact with the substrate, The portion of the intrinsic semiconductor on the portion of the first n-type semiconductor, The portion of the first n-type semiconductor or the portion of the second n-type semiconductor on the portion of the intrinsic semiconductor, A portion of a p-type semiconductor located on the portion of the first n-type semiconductor or the second n-type semiconductor and in contact with the first electrode, An electro-optic modulator according to any one of claims 1 to 5, including the following:
8. At least one of the first waveguide or the second waveguide is, The portion of the n-type semiconductor in contact with the substrate, A portion of the p-type semiconductor located on the portion of the n-type semiconductor and in contact with the first electrode, An electro-optic modulator according to any one of claims 1 to 5, including the following:
9. The aforementioned substrate is A semi-insulating layer, The n-type semiconductor layer on the aforementioned semi-insulating layer, An electro-optic modulator according to any prior claim, including the one described in any prior claim.
10. The electro-optic modulator according to any prior claim, wherein the first waveguide is spaced apart from the second waveguide by a distance of approximately 1 μm to 50 μm.
11. The electro-optic modulator according to any prior claim, wherein the length of at least one of the first waveguide and the second waveguide is between 0.5 mm and 5 mm along the respective optical propagation axes of the first waveguide and the second waveguide.
12. The electro-optic modulator according to any prior claim, wherein the first waveguide has a width of 0.5 μm to 5 μm perpendicular to the optical propagation axis and perpendicular to the distance between the first electrode and the first portion of the substrate.
13. An electro-optic modulator according to any prior claim, wherein at least one of the first waveguide or the second waveguide includes InP.
14. An electro-optic modulator according to any prior claim, wherein at least one of the first electrode or the second electrode comprises gold.
15. An electro-optic modulator according to any prior claim, comprising a dielectric material between the first electrode and the second electrode.
16. An optical integrated circuit comprising an electro-optic modulator as described in any prior claim.
17. The optical integrated circuit according to claim 16, configured to apply a potential difference between the substrate and at least one of the first electrode or the second electrode.
18. The optical integrated circuit according to claim 17, configured to apply a first potential difference or a second potential difference between the first electrode and the second electrode.
19. Light source and An optical splitter that splits the light from the light source and, after splitting, directs the light into the first waveguide and the second waveguide, An optical combiner that couples light from the first waveguide and light from the second waveguide, An optical integrated circuit according to any one of claims 16 to 18, comprising:
20. The optical integrated circuit according to claim 19, wherein the light source is a semiconductor laser.
21. The optical integrated circuit according to claim 19 or 20, further comprising an electrical insulator between the first electrode and the light source.
22. A system for electro-optic modulation, An optical integrated circuit according to claim 19, or, when dependent on claim 18, according to any of claims 19 to 20, A controller is provided, and the controller is The potential difference is applied between the substrate and at least one of the first electrode or the second electrode. The method involves switching between applying the first potential difference and the second potential difference between the first electrode and the second electrode. The system is configured as described above.
23. The system for electro-optic modulation according to claim 22, wherein the difference in volts between the first potential difference and the second potential difference is such that the light propagating through the first waveguide is phase-shifted by 180° from the light propagating through the second waveguide.
24. A method for modulating an optical signal using the system described in claim 22 or 23, The light source generates an input optical signal, The optical splitter divides the input optical signal into at least a first optical signal and a second optical signal, The controller applies the potential difference between the substrate and at least one of the first electrode or the second electrode, The controller applies the first potential difference between the first electrode and the second electrode, The optical combiner combines the first optical signal from the first waveguide and the second optical signal from the second waveguide to output an output optical signal. The controller changes the intensity of the coupled optical signal by switching from applying the first potential difference between the first electrode and the second electrode to applying the second potential difference instead. The method, including the method described above.
25. A method for manufacturing an electro-optic modulator according to any one of claims 1 to 16, To provide the aforementioned substrate, To form the first waveguide at least partially on the first portion of the substrate, The second waveguide is formed at least partially on the second portion of the substrate, The first electrode is formed at least partially in contact with the first waveguide, wherein the first waveguide is located between the first electrode and the first portion of the substrate, The second electrode is formed at least partially in contact with the second waveguide, wherein the second waveguide is located between the second electrode and the second portion of the substrate, and the second electrode is formed at least partially. The method of manufacture, including the above.
26. The manufacturing method according to claim 25, wherein the substrate is monolithic with respect to the optical integrated circuit including the electro-optic modulator.