Method for comparing die systems and alignment vectors

Abstract

This provides a method for comparing die systems and alignment vectors. [Solution] The die system 100 includes a plurality of dies 101 arranged in a desired pattern. Alignment vectors, such as die vectors, can be determined from the edge features of the dies. Alignment vectors can be compared with other dies or die patterns 111 in the same system. A method for comparing dies and die patterns includes comparing die vectors and / or pattern vectors. By comparing the alignment vectors, the die pattern can be modified for the next processing round. The provided method enables accurate comparison between deposited edge features so that precise die splicing can be achieved.

Description

[Technical Field]

[0001] Embodiments of this disclosure relate to apparatus and methods, more specifically to die systems and methods for comparing alignment vectors. [Background technology]

[0002] Virtual reality (VR) is generally considered a computer-generated simulated environment in which the user has an apparent physical presence. VR experiences are generated in 3D and can be viewed on a head-mounted display (HMD), such as other wearable display devices that have glasses or near-eye display panels as lenses to display the VR environment as a substitute for the real environment.

[0003] However, augmented reality (AR) enables users to see their surroundings through the display lenses of glasses or other HMD devices, and furthermore, to see images of virtual objects that are generated for display and appear as part of the environment. AR can include virtual images, graphics, and videos that enhance or extend the environment experienced by the user, in addition to any type of input such as audio input and haptic input. To realize the AR experience, virtual images are superimposed onto the surrounding environment, and this superposition is performed by optical devices. VR and AR devices can be created by using lithography to deposit features onto a substrate to form a die. However, because VR and AR devices are larger in size compared to typical semiconductor lithography patterns, multiple dies and patterns must be precisely joined together to form a functional device.

[0004] One drawback in this field is that current splicing methods do not combine lithography patterns with sufficient precision to guarantee a functional device. In addition, once a lithography pattern is deposited, determining how to modify the pattern in subsequent lithography runs is complex. Furthermore, there is no simple method to compare the expected feature limit dimension (CD) with the actually deposited feature CD.

[0005] Therefore, what is required in this technical field is the precise joining of dies for AR / VR devices. [Overview of the project]

[0006] Embodiments of this specification include a method for comparing a die system and alignment vectors. Alignment vectors are determined from the die's edge features and edge feature pattern. The method for comparing the die and die pattern includes comparing the die vectors and / or pattern vectors. The comparison between the alignment vectors allows for modification of the die pattern for the next processing round. The alignment vectors and method enable precise die splicing.

[0007] In one embodiment, a die system comprising a plurality of dies is provided. Each die comprises a plurality of device features and one or more edge regions. Each edge region comprises one or more edge boundary features and a plurality of edge features.

[0008] In another embodiment, a method for comparing alignment vectors, comprising determining a first alignment vector v1 for a first die, determining a second alignment vector v2 for a second die, and using the first and second alignment vectors v1 and v2, the inter-die angle θ 12 To determine the die angle θ 12 Based on this, the first die pattern is changed to the first modified die pattern, and the die-to-die angle θ 12A method is provided that includes changing a second die pattern to a second modified die pattern based on

[0009] In yet another embodiment, a method for determining die alignment, the method comprising: forming, using a first die pattern, a first plurality of edge features on a first die; forming, using a second die pattern, a second plurality of edge features on a second die; determining a first alignment vector v1 for the first die; determining a second alignment vector v2 for the second die; using the first alignment vector v1 and the second alignment vector v2 to determine an angle θ between the dies; changing the first die pattern to a first modified die pattern; and changing the second die pattern to a second modified die pattern. 12 A method is provided that includes changing a first die pattern to a first modified die pattern and changing a second die pattern to a second modified die pattern.

[0010] To better understand the above-described features of the present disclosure, a more detailed description of the present disclosure, briefly summarized above, is obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments and should not be considered as limiting the scope of the present disclosure, as other equally effective embodiments may be allowed. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] [Figure 1A] A die system according to one embodiment is illustrated. [Figure 1B] An enlarged portion of a die pattern according to one embodiment is illustrated. [Figure 1C] An enlarged portion of a die according to one embodiment is illustrated. [Figure 1D] An enlarged portion of a die according to one embodiment is illustrated. [Figure 2] A flow diagram of method steps for comparing two alignment vectors according to one embodiment. [Figure 3]This is a flowchart of a method process for determining die alignment according to one embodiment. [Modes for carrying out the invention]

[0012] For ease of understanding, the same reference numerals have been used to indicate identical elements common to multiple figures, where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0013] Embodiments of the present disclosure include a method for comparing a die system and alignment vectors. The die system includes a plurality of dies arranged in a desired pattern. Alignment vectors, such as die vectors, can be determined from the edge features of the dies. Alignment vectors can be compared with other dies or die patterns in the same system. The method for comparing dies and die patterns includes comparing die vectors and / or pattern vectors. By comparing the alignment vectors, the die pattern can be modified for the next processing round. The provided method enables accurate comparison between deposited edge features so that accurate die splicing can be achieved. By comparing die vectors and pattern vectors, it is possible to compensate for errors in the first die pattern in the next die pattern. Alignment vectors provide a simple method for comparing the alignment and overlap between dies and die patterns. Embodiments of the present disclosure, while not limited to these, may be useful for aligning dies in a die system.

[0014] As used herein, the term "about" refers to a variation of ±10% from the nominal value. Such variation should be understood to be included in any value provided herein.

[0015] Figure 1A illustrates a die system 100 according to one embodiment. The die system 100 is configured to become a lens for an optical device such as a VR or AR headset or device. The die system 100 includes any material used in the optical device, such as, but not limited to, glass or plastic.

[0016] As illustrated, the die system 100 includes a plurality of dies 101 and a plurality of die patterns 111. As shown in Figure 1A, each of the plurality of dies 101 and / or the plurality of die patterns 111 is separated by a solid line. The die pattern 111 is a pattern of material to grow and form a desired patterned die 101. Thus, at any given time, the die system 100 may include a die pattern 111 (i.e., the desired pattern to be formed), a die 101 (i.e., a patterned die), or a mixture of both.

[0017] Although the multiple dies 101 and multiple die patterns 111 are illustrated in a grid pattern, it is conceivable that the multiple dies 101 and multiple die patterns 111 may be in any arrangement. Each die 101 and / or die pattern 111 may have the same shape and / or dimensions as any other die and / or die pattern, or some of the dies and / or die patterns may have different shapes and / or dimensions from the other dies and / or die patterns. The number of dies 101 and / or die patterns 111, the arrangement of the dies and / or die patterns, and the shape and dimensions of the dies and / or die patterns are selected by those skilled in the art to produce a preferred optical device.

[0018] Figure 1B shows a magnified portion of a die pattern 111 according to one embodiment. The die pattern 111 can be any mask used in the art, such as a lithography mask, a digital mask, or a virtual mask. The magnified portion of Figure 1B shows exemplary intersections between die patterns 111A, 111B, 111C, and 111D. Figure 1B illustrates the die patterns 111 created on the corresponding die 101 (shown in Figure 1C). For example, die patterns 111A, 111B, 111C, and 111D are used to form dies 101A, 101B, 101C, and 101D in Figure 1C.

[0019] Although the die patterns 111A, 111B, 111C, and 111D shown in Figure 1B are similar, the die patterns 111A, 111B, 111C, and 111D may be the same or different from each other. Therefore, it should be understood that the dies 101A, 101B, 101C, and 101D deposited as shown in Figure 1C below may be the same or different for each die. Although not shown in Figures 1B-1C, which show die pattern 111 and the corners of the die, it should be understood that the die pattern extends throughout the entire die pattern.

[0020] As illustrated, each die pattern 111 includes an edge pattern region 119 (for example, die patterns 111A, 111B, 111C, and 111D each include edge patterns 119A, 119B, 119C, and 119D, respectively). The edge pattern region 119 is approximately 1 μm to 10 μm wide. The size of the edge pattern region 119 is small enough that the functionality of the final die 101 is not affected. As illustrated, each edge pattern region 119 (119A, 119B, 119C, 119D, etc.) includes multiple edge feature patterns 112 (112A, 112B, 112C, 112D, etc.) and one or more edge boundary feature patterns 113 (113A, 113B, 113C, 113D, etc.). Each of the multiple edge feature patterns 112 is separated from each other by distances a and b in the x and y directions, respectively. The distances a and b may be the same or different within a given die pattern 111, or between die patterns, for example, between 111A and 111B. The distances a and b may vary across the entire given die pattern 111. The distances a and b may be approximately 1 nm to 5 μm. Although shown as a rectangular grid, it should be understood that the edge feature pattern 112 may have any arrangement.

[0021] An edge boundary feature pattern 113 may have a first portion 113' having length L' and a second portion 113" having a second length L''. The lengths L' and L'' may be approximately 100 nm to approximately 10 μm. The lengths L' and L'' of a given edge boundary feature pattern 113 may be the same as or different from other edge boundary feature patterns. For example, the length L' of the first portion 113A' of edge boundary feature pattern 113A is different from the length L' of the first portion 113B' of edge boundary feature pattern 113B. Although the edge boundary feature pattern 113 is shown to have an L-shape, any shape, such as a cross shape, is possible. The distance d between adjacent first portions 113', for example, the distance between 113A' and 113C', and the distance d between 113B' and 113D', may be the same or different. Similarly, the distance d between adjacent second portions 113'', for example, the distance d between 113A'' and 113B'', and the distance d between 113C'' and 113D'', may be the same or different. The distance d can be approximately 50 nm to approximately 5 μm.

[0022] For each die pattern 111, the pattern vector 115 is defined by the direction and distance between two or more features in the pattern. For example, pattern vector 115A is defined by the distance between two edge feature patterns 112A. In another example, pattern vector 115A is defined between an edge feature pattern 112A and a boundary feature pattern 113A (not shown). In yet another example, pattern vector 115A is defined between an edge feature pattern 112A and a first portion 113A' of a boundary feature pattern 113A (not shown). In each case, each die pattern 111 (e.g., die pattern 111A) has a corresponding pattern vector 115 (e.g., 115A). The definition of pattern vector 115 between corresponding die patterns is consistent in order to compare pattern vectors 115 between corresponding die patterns (e.g., comparing pattern vector 115A of die pattern 111A with pattern vector 115B of die pattern 111B). Figure 1B shows four die patterns 111A, 111B, 111C, and 111D, each having corresponding pattern vectors 115A, 115B, 115C, and 115D.

[0023] For virtual or digital masks, the pattern vector 115 can be determined digitally, for example, by measuring distances and angles by pixels in the mask. For physical masks, the pattern vector 115 can be determined using any desired imaging technique, such as a scanning electron microscope (SEM). Other possible imaging techniques include optical and bright-field inspection using light of any wavelength.

[0024] The pattern vectors 115 between adjacent die patterns 111 are used to compare the correct orientation and positioning of the die patterns relative to each other. For example, the pattern vector 115A of die pattern 111A may be compared with the pattern vector 115B of die pattern 111B. In Figure 1B, the illustrated pattern vectors 115A and 115B are correctly oriented relative to each other, and therefore the die patterns 111A and 111B are correctly aligned.

[0025] Figure 1C shows a magnified portion of die 101 according to one embodiment. The magnified portion of Figure 1C shows exemplary intersections between dies 101A, 101B, 101C, and 101D. Dies 101A, 101B, 101C, and 101D are patterns deposited from the corresponding die patterns 111A, 111B, 111C, and 111D shown in Figure 1B. Although the dies 101A, 101B, 101C, and 101D shown in Figure 1C are similar, it should be understood that dies 101A, 101B, 101C, and 101D may be the same or different from one another. Each die 101 is configured to reflect and / or transmit light of a specific wavelength, depending on the intended function of the optical device.

[0026] As illustrated, each die 101 includes an edge region 109 (for example, dies 101A, 101B, 101C, and 101D each include edge regions 109A, 109B, 109C, and 109D, respectively). Each of the edge regions 109 (e.g., 109A, 109B, 109C, and 109D) contains patterned material corresponding to the equivalent edge pattern region 119 (e.g., 119A, 119B, 119C, and 119D) of the die pattern 111 (e.g., 111A, 111B, 111C, and 111D). The edge regions 109 are approximately 1 μm to 10 μm wide. The size of the edge regions 109 is small enough that the function of die 101 is not affected. As illustrated, an edge region 109 (e.g., 109A, 109B, 109C, 109D) includes multiple edge features 102 (e.g., 102A, 102B, 102C, 102D) and one or more edge boundary features 103 (e.g., 103A, 103B, 103C, 103D). Each of the multiple edge features 102 (e.g., 102A, 102B, 102C, 102D) includes a patterned material corresponding to an equivalent edge feature pattern 112 (e.g., 112A, 112B, 112C, 112D). Each of the multiple edge boundary features 103 (e.g., 103A, 103B, 103C, 103D) includes a patterned material corresponding to an equivalent edge boundary feature pattern 113 (e.g., 113A, 113B, 113C, 113D). Multiple edge features 102 are separated from each other by distances a and b in the x and y directions, respectively. The distances a and b may be the same or different within a given die 101 or between die patterns, for example, between 101A and 101B. The distances a and b may vary across the entire die 101. The distances a and b may range from approximately 50 nm to approximately 5000 μm. Although shown as a rectangular grid, it should be understood that the edge features 102 can have any arrangement.

[0027] The multiple edge features 102 include any features used in optical devices of the art. The multiple edge features 102 have a CD (height and width, etc.) of about 10 nm to about 100 μm (e.g., about 10 nm to about 100 nm, about 20 nm to about 200 nm, or about 60 nm to about 500 nm). According to one embodiment, the multiple edge features 102 include vias or holes. According to one embodiment, the multiple edge features 102 include space lines.

[0028] The multiple edge features 102 include pillars, such as those used in a metalens array, according to one embodiment. The multiple edge features 102 have different shapes depending on the desired spectrum of light to be filtered. The multiple edge features 102 can be substantially circular, triangular, square, rectangular, or heterogeneous in shape. The multiple edge features 102 can be made from any suitable high refractive index material, including, but not limited to, silicon, silicon oxide, silicon nitride, titanium oxide, tantalum oxide, zirconium oxide, hafnium oxide, gallium arsenide, gallium nitride, and niobium oxide. The multiple edge features 102 can also be made from metallic materials such as gold, silver, or copper.

[0029] The multiple edge features 102 have a limiting dimension (CD), such as width or radius, which is approximately 20 nm to 500 nm. The multiple edge features 102 have a height of approximately 10 nm to 2 μm. The CD, height, shape, material, and feature isolation distance of the multiple edge features 102 are selected, according to some embodiments, to form a die 101 that filters everything except a narrow wavelength band of light.

[0030] In one embodiment, the multiple edge features 102 are circular or elliptical columns comprising silicon dioxide (SiO2), silicon (Si), titanium dioxide (TiO2), or gallium nitride (GaN) material, and the columns have a radius of about 30 nm to 500 nm, a height of about 10 nm to 2 μm, and a spacing of about 30 nm to about 5000 nm.

[0031] The edge boundary feature 103 may have a first section 103' having length L' and a second section 103" having a second length L''. Lengths L' and L'' can be approximately 100 nm to approximately 10 μm. The lengths L' and L'' of a given edge region 109 may be the same as or different from other edge regions. For example, the length L' of the first section 103A' of edge boundary feature 103A is different from the length L' of the first section 103B' of edge boundary feature 103B. Although the edge boundary feature 103 is shown as having an L-shape, any shape, such as a cross shape, is possible.

[0032] One or more edge boundary features 103 may contain the same material as multiple edge features 102. The distance d between adjacent first sections 103', for example, the distance between 103A' and 103C', and the distance between 103B' and 103D', may be the same or different. Similarly, the distance d between adjacent second parts 103'', for example, the distance between 103A'' and 103B'', and the distance between 103C'' and 103D'', may be the same or different. The distance d may range from about 1 nm to about 5000 μm.

[0033] For each die 101, the die vector 105 is defined by the direction and distance between two features in the die. For example, die vector 105A is defined by the distance between two edge features 102A. In another example, die vector 105A is defined between edge feature 102A and edge boundary feature 103A (not shown). In yet another example, die vector 105A is defined between edge feature 102A and a first portion 103A' of boundary feature 103A (not shown). In each case, each die 101 (e.g., die 101A) has a corresponding die vector 105 (e.g., 105A). Die vector 105 can be determined using an image of the die 101, and the die vector is determined by measuring the distance between pixels in the image of the die. Any desired imaging technique can be used to create an image of the die, such as SEM. Other possible imaging techniques include optical and bright-field imaging using light of any wavelength. The desired wavelength of light can be selected by those skilled in the art to match the CD between the edge feature 102 and the edge boundary feature 103. The error in the die vector 105 is approximately the size of one pixel. Figure 1C shows four dies 101A, 101B, 101C, and 101D, each having corresponding die vectors 105A, 105B, 105C, and 105D.

[0034] The die vectors 105 between adjacent dies 101 are used to compare the correct orientation and alignment of the die patterns relative to each other. For example, the die vector 105A of die 101A can be compared with the die vector 105B of die 101B. In Figure 1C, the illustrated die vectors 105A and 105B are correctly oriented relative to each other, and therefore dies 101A and 101B are correctly aligned.

[0035] During the formation of die 101 using die pattern 111, the dimensions of the plurality of edge features 102 can be different from the plurality of edge feature patterns 112 of die pattern 111. For example, process drift can result in a shift in the position of edge feature 102 from edge feature pattern 112, the thickness of the edge feature can vary from the edge feature pattern, the substrate under the die can be non-uniform, there can be noise in the imaged image of the die, or there can be an error in the pattern recognition algorithm used to create the image of the die. In these cases, die vector 105 (e.g., die vector 105A shown in FIG. 1C) can vary from pattern vector 115 (e.g., pattern vector 115A shown in FIG. 1B). Thus, the comparison between die vector 105 and pattern vector 115 is used to refine die pattern 111 for the next die 101. The angle θ defined between die vector 105A and pattern vector 115A AA’ is calculated using the following equation. cos(θ AA’ )=(v A ·v A’ ) / (|v A ||v A’ |), where, according to one embodiment, |v A | is the absolute value of the die vector and |v A’ | is the absolute value of the pattern vector. When the angle is small, the equation is simplified as follows. θ AA’ =(v A ·v A’ ) / (|v A ||v A’ |), where, when θ AA’ is small, TIFF202612295600K000002.tif91701According to one embodiment, the x component of die vector 105A is compared with the x component of pattern vector 115A, and the y component of die vector 105A is compared with the y component of pattern vector 115A. Angle θ AA’The error is less than approximately 150 arcseconds, according to one embodiment. (x-component difference, y-component difference, and angle θ) AA’ This can be used to correct the die pattern 111A, which results in more accurate deposition of die 101A.

[0036] Figure 1D shows a magnified portion of die 101 according to one embodiment. The magnified portion of Figure 1D shows the intersection of four dies 101E, 101F, 101G, and 101H, including edge regions 109E, 109F, 109G, and 109H, respectively. Compared to Figure 1C, which shows the intersection of four properly aligned dies 101A, 101B, 101C, and 101D, Figure 1D shows the intersection of four improperly aligned dies 101E, 101F, 101G, and 101H. For example, dies 101E, 101F, 101G, and 101H are shown as not being approximately 90° from each other, so that the corners of each die do not intersect at an angle of approximately 90°.

[0037] For each die 101, the die vector 105 is defined by the direction and distance between two features in the die. For example, die vector 105E is defined by the distance between two edge features 102E. In another example, die vector 105E is defined between edge feature 102E and boundary feature 103E (not shown). In yet another example, die vector 105E is defined between edge feature 102E and a first portion 103E' of boundary feature 103E (not shown). In each case, each die 101 (e.g., die 101E) has a corresponding die vector 105 (e.g., 105E). Figure 1D shows four dies 101E, 101F, 101G, and 101H, each having corresponding die vectors 105E, 105F, 105G, and 105H.

[0038] The die vector 105 between adjacent die patterns 111 is used to compare the correct orientation and position of the die patterns relative to each other. For example, the die vector 105E of die 101E can be compared with the die vector 105F of die 101F. In Figure 1D, the illustrated die vectors 105E and 105F are not correctly oriented relative to each other, and therefore, dies 101E and 101F are not correctly aligned.

[0039] Therefore, the comparison of the die vector 105E of die 101E and the die vector 105F of die 101F is used to refine the corresponding die patterns 111E and 111F for the subsequent deposition of dies 101E and 101F. The angle θ defined between die vector 105E and die vector 105F is used. EF It is calculated using the following formula: cos(θ EF )=(v E ·v F ) / (|v E ||v F |), Here, according to one embodiment, |v E | is the absolute value of the divector 10⁵E, and |v F | represents the absolute value of the divector 10⁵F. For small angles, the formula is simplified as follows: θ EF =(v E ·v F ) / (|v E ||v F |), At this time, θ EF If it is small, According to one embodiment, the x component of die vector 105E is compared with the x component of die vector 105F, and the y component of die vector 105E is compared with the y component of die vector 105F. The difference of the x components, the difference of the y components, and the angle θ EF This can be used to correct the die pattern, resulting in more accurate deposition of dies 101E and 101F. Angle θ EFThe error is less than approximately 150 arcseconds, according to one embodiment. For example, in die 101 shown in Figure 1D, the angle θ EF This is approximately the same as the angular difference between adjacent dies 101E and 101F.

[0040] As described above, alignment vectors can be used to compare features of die 101 and / or die pattern 111 with each other. Alignment vectors may include any combination of die vector 105 (shown in Figures 1C-1D) and pattern vector 115 (shown in Figure 1B). Possible combinations of comparisons between alignment vectors include, but are not limited to, comparisons between die vectors 105 of adjacent dies 101 (e.g., comparison of vectors 105A and 105B), comparisons between pattern vectors 115 of adjacent die patterns 111 (e.g., comparison of pattern vectors 115A and 115B), and comparisons between die vector 105 and pattern vector 115 (e.g., comparison of die vector 105A and pattern vector 115A). While comparisons between two alignment vectors are described above and below, it should be understood that any number of comparisons between alignment vectors can be performed.

[0041] In addition, although the dies 101 of the die system 100 are shown to be in the same xy plane in a single layer (for example, dies 101A, 101B, 101C, 101D shown in Figure 1C, and dies 101E, 101F, 101G, 101H shown in Figure 1D), alignment vectors can be determined for dies in different layers, and comparisons between alignment vectors in different layers can be performed as shown in Figures 2 and 3 below.

[0042] Figure 2 is a flowchart of the steps of Method 200 for comparing alignment vectors according to one embodiment. The steps of Method 200 are described in relation to Figure 2, but those skilled in the art will understand that any system configured to perform the steps of the Method in any order is within the scope of the embodiments described herein.

[0043] Method 200 begins in step 210, in which a first alignment vector v1 is determined. The first alignment vector may be either the die vector 105 or the pattern vector 115, as described above. The first alignment vector v1 can be determined using any suitable lithography or measurement tool in the art.

[0044] According to some embodiments, the first alignment vector v1 is the die vector 105A. The first alignment vector v1 is defined by a first x component and a second y component. The first x component is equal to the x-distance between two of the multiple edge features 102A of the first die 101A, and the first y component is equal to the y-distance between two of the multiple edge features of the first die. According to some embodiments, the first alignment vector v1 is the pattern vector 115. The first alignment vector v1 is defined by a first x component and a second y component. The first x component is equal to the x-distance between two of the multiple edge feature patterns 112A of the first die pattern 111A, and the first y component is equal to the y-distance between the same two of the multiple edge feature patterns of the first die pattern.

[0045] In step 220, a second alignment vector v2 is determined. The second alignment vector v2 can be determined using any suitable lithography or measurement tool in the art.

[0046] According to some embodiments, the second alignment vector v2 is the die vector 105B. The second alignment vector v2 is defined by a second x component and a second y component. The second x component is equal to the x-distance between two of the multiple edge features of the second die 101B, and the second y component is equal to the y-distance between two of the multiple edge features of the second die.

[0047] According to some embodiments, the second alignment vector v2 is the pattern vector 115B. The second alignment vector v2 is defined by a first x component and a second y component. The second x component is equal to the x-distance between two of the multiple edge feature patterns 112B of the second die pattern 111B, and the first y component is equal to the y-distance between two of the multiple edge feature patterns of the second die pattern. In step 230, the first alignment vector v1 and the second alignment vector v2 are used to adjust the die-to-die angle θ 12 This will be decided.

[0048] Angle θ 12 It is calculated using the following formula: cos(θ 12 )=(v1·v2) / (|v1||v2|), Here, according to one embodiment, |v1| is the absolute value of the first alignment vector v1, and |v2| is the absolute value of the second alignment vector v2. When the angle is small, the formula is simplified as follows: θ 12 =(v1·v2) / (|v1||v2|), At this time, θ 12 If it is small, TIFF2026122956000004.tif10170

[0049] In step 240, one or more corrections to be made to the first die pattern 111A and / or the second die pattern 111B are determined. Determining one or more corrections to the first die pattern 111A and the second die pattern 111B is done, according to one embodiment, by an angle θ 12 Based on this, the first die pattern is changed to the first modified die pattern, and the angle θ 12 This includes changing the second die pattern to a second modified die pattern based on the above.

[0050] The second alignment vector v2 is similar to the first alignment vector v1, i.e., the die angle θ between alignment vectors v1 and v2. 12 It is expected to be small. For example, in an embodiment where the first alignment vector v1 is the die vector for the die pattern (e.g., die vector 105A for die 101A) and the second alignment vector v2 is the pattern vector for the die pattern (e.g., pattern vector 115A for die pattern 111A), a small inter-die angle θ is expected so that the deposited die resembles the die pattern. 12 This is expected. However, due to process drift or other factors mentioned above, a large die angle θ 12 This may indicate that die 101A and its associated die pattern do not match die pattern 111A, and therefore, one or more corrections may be performed on future die patterns. For example, pattern features of die pattern 111A may be shifted if the corresponding die features are out of place.

[0051] In another example, in an embodiment where the first alignment vector v1 is the die vector for the first die pattern (e.g., die vector 105A for die 101A) and the second alignment vector v2 is the die vector for the second die pattern (e.g., die vector 105B for die pattern 101B), a small inter-die angle θ is used so that adjacent dies are similar to one another. 12 This is expected. However, due to process drift or other factors mentioned above, a large die angle θ 12 This may indicate that adjacent dies a do not align, and therefore one or more corrections may be performed in future die patterns. For example, if two dies are not properly aligned (e.g., dies 101E and 101F shown in Figure 1D), the angle of the entire second die pattern relative to the first die pattern may be adjusted.

[0052] Figure 3 is a flowchart of the steps of Method 300 for determining die alignment according to one embodiment. The steps of Method 300 are described in relation to Figure 3, but those skilled in the art will understand that any system configured to perform the method steps in any order is within the scope of the embodiments described herein.

[0053] Method 300 begins with step 310, in which a first die 101A is deposited and a first set of edge features 102A is formed. The first die 101A can be formed using the first die pattern 111A as described above.

[0054] In step 320, a second die 101B is deposited, forming a second set of edge features 102B. The second die 101B can be formed using the second die pattern 111B, as described above.

[0055] In step 210, a first alignment vector v1 is determined. The first alignment vector v1 is the die vector 105A. The first alignment vector v1 is defined by a first x component and a second y component. The first x component is equal to the x-distance between two of the multiple edge features 102A of the first die 101A, and the first y component is equal to the y-distance between the same two of the multiple edge features of the first die. The first alignment vector v1 can be determined using any suitable measuring tool in the art.

[0056] In step 220, a second alignment vector v2 is determined. The second alignment vector v2 is the die vector 105B. The second alignment vector v2 is defined by a second x component and a second y component. The second x component is equal to the x-distance between two of the multiple edge features of the second die 101B, and the second y component is equal to the y-distance between the same two of the multiple edge features of the second die. The second alignment vector v2 can be determined using any suitable measuring tool in the art.

[0057] In step 230, the die angle θ is adjusted using the first alignment vector v1 and the second alignment vector v2. 12 This will be decided.

[0058] Die angle θ 12 It is calculated using the following formula: cos(θ 12 )=(v1·v2) / (|v1||v2|), Here, according to one embodiment, |v1| is the absolute value of the first alignment vector v1, and |v2| is the absolute value of the second alignment vector v2. When the angle is small, the formula is simplified as follows: θ 12 =(v1·v2) / (|v1||v2|), At this time, θ 12 If it is small, TIFF2026122956000005.tif9170

[0059] In step 330, the first alignment vector v1 and the second alignment vector v2 are compared to determine the correction to be made to the second die pattern 111A. In one embodiment, the first die pattern 111A is used as a reference die, and the alignment correction data is saved by the measurement tool and simultaneously sent to the lithography tool. The alignment correction data is used to correct the alignment of the second die during the next exposure cycle in step 340. Thus, the alignment correction data is used to create the first modified die pattern 111A'. The first modified die pattern 111A' incorporates the improvements from the comparison between the first alignment vector v1 and the second alignment vector v2.

[0060] In step 340, the first alignment vector v1 and the second alignment vector v2 are compared to determine the correction to be applied to the second die pattern 111B. The second die pattern 111B is changed to a second modified die pattern 111B'. The second modified die pattern 111B' incorporates the improvements from the comparison between the first alignment vector v1 and the second alignment vector v2. According to one embodiment, the second modified die pattern 111B' incorporates some or all of the alignment correction data determined in step 330.

[0061] As described above, a method for comparing die systems and alignment vectors is disclosed herein. A die system includes multiple dies arranged in a desired pattern. Alignment vectors, such as die vectors, can be determined from the edge features of the dies. Alignment vectors can be compared with other dies or die patterns within the same system. A method for comparing dies and die patterns includes comparing die vectors and / or pattern vectors. By comparing alignment vectors, the die pattern can be modified for the next processing round.

[0062] The provided method enables precise comparison between deposited edge features, allowing for accurate die splicing. Comparison of die vectors and pattern vectors allows for compensation of subsequent die patterns for errors in the first die pattern. Alignment vectors provide a simple method for comparing alignment and overlap between dies and die patterns.

[0063] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. Multiple Dies A die system comprising, Multiple device features, One or more edge regions and Each edge region includes, One or more edge boundary features, Multiple edge features and A die system, including a die system.

2. The die system according to claim 1, wherein the plurality of device features include one or more pillars.

3. The die system according to claim 1, wherein the plurality of device features include one or more vias.

4. The die system according to claim 1, wherein the plurality of device features include one or more line spacings.

5. The die system according to claim 1, wherein the spacing between the plurality of device features is different from the spacing between the plurality of edge features.

6. A method for comparing alignment vectors, First alignment vector v for the first die and the first die pattern １ To decide, Second alignment vector v for the second die and second die pattern ２ To decide, The first alignment vector v １ and the second alignment vector v ２ Using the die angle θ １２ To decide, The die angle θ １２ Based on this, the first die pattern is changed to a first modified die pattern, The die angle θ １２ Based on this, the second die pattern is changed to a second modified die pattern. Methods that include...

7. The first alignment vector v １ This is a divector, The first alignment vector v １ is defined by a first x component and a second y component, The first x-component is equal to the x-distance between two of the multiple edge features of the first die, The first y component is equal to the y-distance between two of the plurality of edge features of the first die, The second alignment vector is a die vector, The second alignment vector v ２ It is defined by the second x component and the second y component, The second x-component is equal to the x-distance between two of the multiple edge features of the second die, The method according to claim 6, wherein the second y component is equal to the y distance between two of the plurality of edge features of the second die.

8. The die angle θ １２ Determining this is done by formula cos(θ) １２ ) = (v １ ・v ２ ) / (|v １ | | v ２ This includes solving |), where |v １ | represents the first alignment vector v １ It is the absolute value of |v|. ２ | represents the first alignment vector v ２ The method according to claim 7, which is the absolute value of

9. The first alignment vector is a die vector, The first alignment vector v １ It is defined by the first x component and the second y component, The first x-component is equal to the x-distance between two of the multiple edge features of the first die, The first y component is equal to the y-distance between two of the plurality of edge features of the first die, The second alignment vector is a pattern vector, The second alignment vector v ２ It is defined by the second x component and the second y component, The second x component is equal to the x distance between two of the multiple edge feature patterns of the second die pattern, The method according to claim 6, wherein the second y component is equal to the y distance between two of the plurality of edge feature patterns of the second die pattern.

10. The die angle θ １２ Determining this is done by formula cos(θ) １２ ) = (v １ ・v ２ ) / (|v １ | | v ２ This includes solving |), where |v １ | represents the first alignment vector v １ It is the absolute value of |v|. ２ | represents the first alignment vector v ２ The method according to claim 9, which is the absolute value of

11. The method according to claim 9, wherein each of the first die and the second die further comprises one or more edge boundary features.

12. The method according to claim 9, wherein the plurality of edge features include one or more pillars.

13. The method according to claim 9, wherein the plurality of edge features include one or more vias.

14. The method according to claim 9, wherein the plurality of edge features include one or more line spacings.

15. A method for determining die alignment, Using a first die pattern, a first set of edge features are formed on the first die. Using a second die pattern, a second set of edge features are formed on the second die. The first alignment vector v for the first die １ To decide, The second alignment vector v for the second die ２ To decide, The first alignment vector v １ and the second alignment vector v ２ Using the die angle θ １２ To decide, The die angle θ １２ Based on this, the first die pattern is changed to a first modified die pattern, The die angle θ １２ Based on this, the second die pattern is changed to a second modified die pattern. Methods that include...

16. The method according to claim 15, wherein the method is repeated using the first modified die pattern as the first die pattern and the second modified die pattern as the second die pattern.

17. The first alignment vector v １ This is a divector, The first alignment vector v １ It is defined by the first x component and the second y component, The first x-component is equal to the x-distance between two of the first plurality of edge features of the first die, The first y-component is equal to the y-distance between two of the first plurality of edge features of the first die, The second alignment vector v ２ This is a divector, The second alignment vector v ２ It is defined by the second x component and the second y component, The second x component is equal to the x distance between two of the second plurality of edge features of the second die, The method according to claim 15, wherein the second y component is equal to the y distance between two of the second plurality of edge features of the second die.

18. The die angle θ １２ Determining this is done by formula cos(θ) １２ ) = (v １ ・v ２ ) / (|v １ | | v ２ This includes solving |), where |v １ | represents the first alignment vector v １ It is the absolute value of |v|. ２ | represents the first alignment vector v ２ The method according to claim 17, which is the absolute value of

19. The method according to claim 15, wherein each of the first die and the second die further comprises one or more edge boundary features.

20. The method according to claim 15, wherein the plurality of device features include one or more pillars.

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