Display panel

Abstract

A display panel according to one embodiment of the present invention includes a light-emitting element that outputs source light and includes a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer, and an optical structure layer disposed on the light-emitting element, wherein the optical structure layer includes a light control layer disposed on the light-emitting element and including at least one light control pattern, a low refractive index layer disposed on the light control layer, and a barrier layer disposed between the light control layer and the low refractive index layer and containing silicon oxynitride (SiON), wherein the barrier layer is disposed adjacent to the low refractive index layer and has a nitrogen content of less than 1 at%, a second layer disposed separated from the low refractive index layer with the first layer in between and has a nitrogen content of 3 at% or more and 30 at%, and a third layer disposed separated from the low refractive index layer with the first and second layers in between and has a nitrogen content of less than 3.2 at%.

Description

Technical Field

[0001] The present invention relates to a display panel, and more particularly, to a display panel with improved durability, reliability, and increased display efficiency.

Background Art

[0002] Display panels include transmissive display panels that selectively transmit source light generated from a light source, and emissive display panels that generate source light by themselves. The display panel may include different types of light control patterns by pixels to generate a color image. The light control pattern may transmit only a partial wavelength range of the source light or may convert the color of the source light. Some light control patterns may not change the color of the source light but may change the characteristics of the light.

Summary of the Invention

Problems to be Solved by the Invention

[0003] An object of the present invention is to provide a display panel with improved durability, reliability, and display efficiency.

Means for Solving the Problems

[0004] [[ID=​​

[0005] For light in the wavelength range of 400 nm to 700 nm, the refractive index of the third layer may be 1.3 or more and 1.5 or less.

[0006] The first layer may be placed directly on the low refractive index layer, the second layer may be placed directly on the first layer, and the third layer may be placed directly on the second layer.

[0007] The thickness of the first layer may be 500 Å or more.

[0008] The optical structure layer is separated from the light control layer by the low refractive index layer in between, and may further include a color filter layer containing multiple color filters.

[0009] The optical control pattern includes a first optical control pattern that converts the source light into first light and a second optical control pattern that transmits the source light, and the first optical control pattern may include a first quantum dot that converts the source light into the first light.

[0010] The optical control layer further includes banks disposed between the optical control patterns, and the barrier layer may be disposed directly on one surface of the optical control patterns and the banks.

[0011] The low refractive index layer may include a base resin and a plurality of hollow particles dispersed in the base resin.

[0012] The low-refractive-index layer may have a refractive index of 1.3 or less for light in the wavelength range of 400 nm to 700 nm.

[0013] The second layer may include a second-first layer positioned adjacent to the first layer, and a second-second layer positioned between the second-first layer and the third layer, having a different nitrogen content than the second-first layer.

[0014] The optical structure layer further includes an additional barrier layer separated from the barrier layer with the light control layer in between, and the additional barrier layer may be directly disposed on one side of the light control pattern.

[0015] A display panel according to one embodiment of the present invention may further include a filling layer disposed between the light-emitting element and the optical structure layer, and covering the light-emitting element.

[0016] The first layer may have a refractive index of 1.3 to 1.5 for light in the wavelength range of 400 nm to 700 nm, and the second layer may have a refractive index of 1.4 to 1.8 for light in the wavelength range of 400 nm to 700 nm.

[0017] The third layer may be in contact with one surface of the light control pattern.

[0018] The light-emitting element is positioned between the first electrode and the second electrode and comprises a plurality of light-emitting stacks, each of which includes the light-emitting layer. The plurality of light-emitting stacks comprises a first light-emitting stack positioned on the first electrode and including the first light-emitting layer, a charge-generating layer positioned on the first light-emitting stack, and a second light-emitting stack positioned on the charge-generating layer and including the second light-emitting layer, wherein the first light-emitting layer can emit light of a different color from that of the second light-emitting layer.

[0019] A display panel according to one embodiment of the present invention includes a light-emitting element that outputs source light and includes a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer, and an optical structure layer disposed on the light-emitting element, wherein the optical structure layer includes a light control layer disposed on the light-emitting element and including at least one light control pattern, a low refractive index layer disposed on the light control layer, and a barrier layer disposed between the light control layer and the low refractive index layer, wherein the barrier layer is arranged sequentially from the low refractive index layer and includes a first layer, a second layer, and a third layer, each containing silicon oxynitride (SiON), the nitrogen content of the second layer being 3 to 60 times the nitrogen content of the first layer, and the nitrogen content of the third layer being less than 3.2 at%.

[0020] The first layer is directly disposed below the low refractive index layer, the second layer is directly disposed below the first layer, and the third layer may be directly disposed below the second layer.

[0021] A display panel according to an embodiment of the present invention includes a light emitting element that outputs source light, a first electrode, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer, and an optical structure layer disposed on the light emitting element. The optical structure layer includes a light control layer disposed on the light emitting element and including at least one light control pattern, a low refractive index layer disposed on the light control layer, and a barrier layer disposed between the light control layer and the low refractive index layer and including silicon oxynitride (SiON). The barrier layer is directly disposed below the low refractive index layer and includes a first layer directly disposed below the low refractive index layer and having a nitrogen content of less than 1 at%, a second layer directly disposed below the first layer and having a nitrogen content of 3 at% or more and 30 at% or less, and a third layer directly disposed below the second layer. The light control layer is directly disposed below the third layer.

[0022] The first layer has a refractive index of 1.3 or more and 1.5 or less with respect to light in a wavelength range of 400 nm to 700 nm, the second layer has a refractive index of 1.4 or more and 1.8 or less with respect to light in a wavelength range of 400 nm to 700 nm, and the third layer may have a refractive index of 1.3 or more and 1.5 or less with respect to light in a wavelength range of 400 nm to 700 nm.

[0023] The thickness of the first layer is 500 Å or more, the thickness of the second layer is 600 Å or more, and the thickness of the third layer may be 500 Å or more.

Advantages of the Invention

[0024] According to the display panel of an embodiment of the present invention, the moisture and oxygen barrier characteristics of the barrier layer included in the light control layer and the durability of the film can be improved, and the light conversion efficiency of the light control layer including the barrier layer can be improved. Thereby, the reliability and display efficiency of the display panel including the light control layer can be improved.

Brief Description of the Drawings

[0025] [Figure 1a] Perspective view of a display panel according to an embodiment of the present invention. [Figure 1b] Cross-sectional view of a display panel according to an embodiment of the present invention. [Figure 1c] Plan view of a display panel according to an embodiment of the present invention. [Figure 2] Enlarged plan view of a part of a display panel according to an embodiment of the present invention. [Figure 3] Cross-sectional view of a display panel according to an embodiment of the present invention. [Figure 4a] View showing an enlarged part of a cross-section of a display panel according to an embodiment of the present invention. [Figure 4b] View showing an enlarged part of a cross-section of a display panel according to an embodiment of the present invention. [Figure 4c] View showing an enlarged part of a cross-section of a display panel according to an embodiment of the present invention. [Figure 5] Cross-sectional view of a light-emitting element according to an embodiment of the present invention. [Figure 6a] Cross-sectional view of a partial configuration of a display panel according to an embodiment of the present invention. [Figure 6b] Enlarged cross-sectional view of a partial configuration of a display panel according to an embodiment of the present invention. [Figure 7] Cross-sectional view of a partial configuration of a display panel according to an embodiment of the present invention.

Mode for Carrying Out the Invention

[0026] Hereinafter, embodiments of the present invention will be described with reference to the drawings.”

[0027] In this specification, when a certain component (or region, layer, part, etc.) is referred to as being “on,” “coupled to,” or “connected to” another component, it means that it can be directly connected or coupled onto the other component, or a third component can be disposed between them.

[0028] The same drawing reference numeral refers to the same component. Furthermore, in drawings, the thickness, proportions, and dimensions of components are exaggerated for the sake of effective explanation of the technical content. "and / or" includes all combinations of one or more components defined by the relevant components.

[0029] Terms such as "first," "second," etc., are used to describe a variety of components, but the components are not limited to those defined by these terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may also be named the first component. A singular expression includes plural expressions unless the context clearly indicates otherwise.

[0030] Furthermore, terms such as "down," "on the lower side," "up," and "on the upper side" are used to describe the relationships between the components shown in the drawings. These terms are relative concepts and are described in relation to the directions shown in the drawings.

[0031] Terms such as "includes" or "has" indicate the presence of features, figures, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood not to pre-exist to exclude the presence or possibility of adding one or more other features, figures, steps, actions, components, parts, or combinations thereof.

[0032] In this specification, “directly positioned” may mean that there are no additional layers, films, regions, plates, etc. between one part and another. For example, “directly positioned” may mean that two layers or two members are positioned without the use of additional members such as adhesive members.

[0033] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as those generally understood by those skilled in the art in the field to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries should be interpreted as having the same meaning as they do in the context of the relevant art, and should not be interpreted in an overly idealistic or formal sense unless expressly defined herein.

[0034] A display panel according to one embodiment of the present invention will be described below with reference to the drawings.

[0035] Figure 1a is a perspective view of a display panel according to one embodiment of the present invention. Figure 1b is a cross-sectional view of a display panel according to one embodiment of the present invention. Figure 1c is a plan view of a display panel according to one embodiment of the present invention.

[0036] As shown in Figure 1a, the display panel DP can display an image via the display surface DP-IS. The display surface DP-IS is parallel to the plane defined by the first directional axis DR1 and the second directional axis DR2. The display surface DP-IS may include a display area DA and a non-display area NDA. Pixels PX are arranged in the display area DA, and pixels PX are not arranged in the non-display area NDA. The non-display area NDA is defined along the edge of the display surface DP-IS. The non-display area NDA may surround the display area DA. However, it is not limited to this, and in one embodiment of the present invention, the non-display area NDA may be omitted or arranged only on one side of the display area DA.

[0037] The normal direction of the display surface DP-IS, that is, the thickness direction of the display panel DP, is indicated by the third directional axis DR3. The front (or top) and back (or bottom) of each layer or unit described below are separated by the third directional axis DR3. However, in this embodiment, the first to third directions DR1, DR2, and DR3 are merely illustrative.

[0038] In one embodiment of the present invention, a display panel DP equipped with a planar display surface DP-IS is shown, but the invention is not limited thereto. The display panel DP may include a curved display surface or a three-dimensional display surface. The three-dimensional display surface may include a plurality of display areas that indicate different directions from one another.

[0039] As shown in Figure 1b, the display panel DP includes a base substrate BS, a circuit element layer DP-CL, a display element layer DP-LED, and an optical structure layer OSL. The base substrate BS may include a synthetic resin substrate or a glass substrate. The circuit element layer DP-CL includes at least one insulating layer and a circuit element. The circuit element includes signal lines, pixel driving circuits, etc. The circuit element layer DP-CL may be formed by a patterning process of insulating layers, semiconductor layers, and conductive layers by a photolithography process, or by a process of forming insulating layers, semiconductor layers, and conductive layers by a coating, vapor deposition, etc. The display element layer DP-LED includes at least a display element. The optical structure layer OSL can convert the color of holes provided by the display element. The optical structure layer OSL may include light control patterns and structures for increasing the light conversion efficiency.

[0040] Figure 1c shows the planar arrangement of signal lines GL1 to GLn, DL1 to DLm, and pixels PX11 to PXnm. Signal lines GL1 to GLn and DL1 to DLm may include multiple gate lines GL1 to GLn and multiple data lines DL1 to DLm.

[0041] Each of the pixels PX11 through PXnm is connected to a corresponding gate line from among multiple gate lines GL1 through GLn and a corresponding data line from among multiple data lines DL1 through DLm. Each of the pixels PX11 through PXnm may include a pixel driving circuit and a display element. A further variety of signal lines may be provided on the display panel DP depending on the configuration of the pixel driving circuit of each pixel PX11 through PXnm.

[0042] The matrix-like pixels PX11 to PXnm are shown as an example, but are not limited to this. Pixels PX11 to PXnm are Pentiles. (R)They can be arranged in a ) shape. For example, the locations where pixels PX11 to PXnm are arranged correspond to the vertices of the diamond. The gate drive circuit GDC is integrated into the display panel DP by an OSG (oxide silicon gate driver circuit) or ASG (amorphose silicon gate driver circuit) process.

[0043] Figure 2 is an enlarged plan view of a portion of a display panel according to one embodiment of the present invention. Figure 2 illustrates a plane in the display panel DP of one embodiment (see Figure 1a) that includes three pixel regions PXA-R, PXA-B, and PXA-G, and the adjacent bankwell region BWA. In one embodiment of the present invention, the three types of light-emitting regions PXA-R, PXA-B, and PXA-G shown in Figure 2 can be repeatedly arranged throughout the display region DA (see Figure 1a).

[0044] A peripheral NPXA region is positioned around the first to third pixel regions PXA-R, PXA-B, and PXA-G. The peripheral NPXA region defines the boundaries of the first to third pixel regions PXA-R, PXA-B, and PXA-G. The peripheral NPXA region may enclose the first to third pixel regions PXA-R, PXA-B, and PXA-G. Structures that prevent color mixing between the first to third pixel regions PXA-R, PXA-B, and PXA-G, such as a pixel definition film PDL (see Figure 3) or a bank BMP (see Figure 3), may be placed in the peripheral NPXA region.

[0045] Figure 2 illustrates, but is not limited to, first to third pixel regions PXA-R, PXA-B, and PXA-G having the same shape on a plane but different areas on a plane. At least two of the first to third pixel regions PXA-R, PXA-B, and PXA-G may have the same area. The areas of the first to third pixel regions PXA-R, PXA-B, and PXA-G can be determined by the emitted color. Among the primary colors, the area of ​​the pixel region emitting red light may be the largest, and the area of ​​the pixel region emitting blue light may be the smallest.

[0046] Figure 2 shows rectangular first to third pixel regions PXA-R, PXA-B, and PXA-G, but is not limited to this. On a plane, the first to third pixel regions PXA-R, PXA-B, and PXA-G may have polygonal shapes (including substantial polygonal shapes) such as rhombuses or pentagons. In one embodiment, the first to third pixel regions PXA-R, PXA-B, and PXA-G may have rectangles with rounded corners (substantial rectangles) on a plane.

[0047] Figure 2 illustrates that the third pixel region PXA-G is placed in the first row, and the first pixel region PXA-R and the second pixel region PXA-B are placed in the second row. However, the arrangement of the first to third pixel regions PXA-R, PXA-B, and PXA-G can be varied in many ways. For example, the first to third pixel regions PXA-R, PXA-B, and PXA-G can be placed in the same row.

[0048] One of the first to third pixel regions PXA-R, PXA-B, and PXA-G provides a second light corresponding to the source light, another provides a first light different from the second light, and the remaining one provides a third light different from both the first and second lights. In this embodiment, the second pixel region PXA-B provides the second light corresponding to the source light. In this embodiment, the first pixel region PXA-R may provide red light, the second pixel region PXA-B may provide blue light, and the third pixel region PXA-G may provide green light.

[0049] A bankwell region BWA may be defined in the display region DA (see Figure 1a). The bankwell region BWA may be a region in which a bankwell BW (see Figure 3) is formed to prevent defects caused by misplacement during the patterning process of multiple optical control patterns CCP-R, CCP-B, and CCP-G (see Figure 4a) contained in the optical control layer CCL (see Figure 4a). In other words, the bankwell region BWA may be a region in which a bankwell formed by removing a portion of the bank BMP (see Figure 4a) is defined.

[0050] Figure 2 illustrates that two bankwell regions (BWAs) are defined adjacent to the third pixel region (PXA-G), but the shape and arrangement of the bankwell regions (BWAs) can be varied in many ways.

[0051] Figure 3 is a cross-sectional view of a display panel according to one embodiment of the present invention. Figure 4a is a magnified view of a portion of the cross-section of the display panel according to one embodiment of the present invention. Figure 3 is a cross-sectional view of a light-emitting element included in the display panel according to one embodiment of the present invention. Figure 3 shows a cross-section corresponding to the cutting line I-I' in Figure 2. Figure 4a shows a cross-section corresponding to the cutting line II-II' in Figure 2.

[0052] Referring to Figure 3, a display panel DP according to one embodiment may include a base substrate BS, a circuit element layer DP-CL disposed on the base substrate BS, and a display element layer DP-LED disposed on the circuit element layer DP-CL. In this specification, the base substrate BS, the circuit element layer DP-CL, and the display element layer DP-LED may be collectively referred to as the lower panel.

[0053] The base substrate BS may be a component that provides a reference surface on which the components included in the circuit element layer DP-CL are arranged. In one embodiment, the base substrate BS may be a glass substrate, a metal substrate, a polymer substrate, etc. However, the embodiment is not limited to these, and the base substrate BS may be an inorganic layer, a functional layer, or a composite material layer.

[0054] The base substrate BS may have a multilayer structure. For example, the base substrate BS may have a three-layer structure consisting of a polymer resin layer, an adhesive layer, and another polymer resin layer. In particular, the polymer resin layer may contain a polyimide resin. The polymer resin layer may also contain at least one of the following: acrylic resin, methacrylic resin, polyisoprene resin, vinyl resin, epoxy resin, urethane resin, cellulose resin, siloxane resin, polyamide resin, and perylene resin. On the other hand, in this specification, "α-type" resin means a resin containing an "α" active group.

[0055] The circuit element layer DP-CL may be placed on the base substrate BS. The circuit element layer DP-CL may include a transistor TD as a circuit element. The configuration of the circuit element layer DP-CL may differ depending on the design of the drive circuit for the pixel PX (see Figure 1a), but Figure 3 shows one transistor TD as an example. The arrangement of the active AD, source SD, drain DD, and gate GD that constitute the transistor TD is shown as an example. The active AD, source SD, and drain DD may be regions separated by the doping concentration or conductivity of the semiconductor pattern.

[0056] The circuit element layer DP-CL may include a lower buffer layer BRL, a first insulating layer 10, a second insulating layer 20, and a third insulating layer 30, all of which are placed on a base substrate BS. For example, the lower buffer layer BRL, the first insulating layer 10, and the second insulating layer 20 may be inorganic layers, while the third insulating layer 30 may be an organic layer.

[0057] The display element layer DP-LED may include a light-emitting element LED as a display element. The light-emitting element LED can generate the source light described above. The light-emitting element LED includes a first electrode EL1, a second electrode EL2, and a light-emitting layer EML disposed between them. In this embodiment, the display element layer DP-LED may include an organic light-emitting diode as a light-emitting element. In one embodiment of the present invention, the light-emitting element may include a quantum dot light-emitting diode. That is, the light-emitting layer EML included in the light-emitting element LED may include an organic light-emitting material as the light-emitting material, or the light-emitting layer EML may include quantum dots as the light-emitting material. Alternatively, in this embodiment, the display element layer DP-LED may include a miniature light-emitting element described later as a light-emitting element. Miniature light-emitting elements include, for example, micro-LED elements and / or nano-LED elements. Miniature light-emitting elements may have a micro or nanoscale size and may include an active layer disposed between a plurality of semiconductor layers.

[0058] The first electrode EL1 is placed on the third insulating layer 30. The first electrode EL1 may be directly or indirectly connected to the transistor TD, although the connection structure between the first electrode EL1 and the transistor TD is not shown in Figure 3.

[0059] The display element layer DP-LED includes a pixel definition film PDL. For example, the pixel definition film PDL may be an organic layer. An emission aperture OH is defined in the pixel definition film PDL. The emission aperture OH of the pixel definition film PDL exposes at least a portion of the first electrode EL1. In this embodiment, the emission aperture OH defines the first emission region EA1.

[0060] The hole control layer HTR, light emission layer EML, and electronic control layer ETR are superimposed on at least the pixel region PXA-R. The hole control layer HTR, light emission layer EML, electronic control layer ETR, and second electrode EL2 may be commonly arranged in the first to third pixel regions PXA-R, PXA-B, and PXA-G (see Figure 4a). The hole control layer HTR, light emission layer EML, electronic control layer ETR, and second electrode EL2 superimposed on the first to third pixel regions PXA-R, PXA-B, and PXA-G (see Figure 4a) may each have a single, integrated shape. However, this is not limited to this, and at least one of the hole control layer HTR, light emission layer EML, and electronic control layer ETR may be formed separately for each of the first to third pixel regions PXA-R, PXA-B, and PXA-G (see Figure 4a). In one embodiment, the light-emitting layer EML may be patterned within the light-emitting aperture OH and formed separately for each of the first to third pixel regions PXA-R, PXA-B, and PXA-G (see Figure 4a).

[0061] The hole control layer (HTR) includes a hole transport layer and may further include a hole injection layer.

[0062] The EML emission layer can generate a third light source. The EML emission layer can generate blue light. The blue light may include light with wavelengths of 410 nm to 480 nm. The emission spectrum of the blue light may have a maximum peak in the wavelength range of 440 nm to 460 nm.

[0063] The electronic control layer (ETR) includes an electron transport layer and may further include an electron injection layer.

[0064] The display element layer DP-LED may include a thin film encapsulation layer TFE that protects the second electrode EL2. The thin film encapsulation layer TFE may contain organic or inorganic materials. The thin film encapsulation layer TFE has a multilayer structure in which inorganic / organic layers are repeated. In this embodiment, the thin film encapsulation layer TFE may include a first encapsulating inorganic layer IOL1 / encapsulating organic layer OL / second encapsulating inorganic layer IOL2. The first and second encapsulating inorganic layers IOL1 / IOL2 protect the light-emitting element LED from external moisture, and the encapsulating organic layer OL can prevent dents in the light-emitting element LED caused by foreign matter introduced during the manufacturing process. Although not shown, the display panel DP may further include a refractive index control layer on top of the thin film encapsulation layer TFE to improve light emission efficiency.

[0065] As shown in Figure 3, an optical structure layer OSL is placed on top of a thin film encapsulation layer TFE. The optical structure layer OSL may include a light control layer CCL, a low refractive index layer LR, a color filter layer CFL, and a base layer BL. In this specification, the optical structure layer OSL may be referred to as the upper panel.

[0066] The light control layer CCL may be placed on top of the display element layer DP-LED, which includes the light-emitting element LED. The light control layer CCL includes a bank BMP, light control patterns CCP-R and CCP-B, and a barrier layer CAP1.

[0067] Bank BMP may comprise a base resin and additives. The base resin BR may consist of a variety of resin compositions generally referred to as binders. Additives may comprise coupling agents and / or photoinitiators. Additives may further comprise dispersants.

[0068] Bank BMP may contain a black coloring agent to block light. Bank BMP may contain a black dye or black pigment mixed with the base resin. In one example, the black coloring agent may contain carbon black, a metal such as chromium, or an oxide thereof.

[0069] The bank BMP includes a bank opening BW-OH corresponding to the light-emitting aperture OH. On a plane, the bank opening BW-OH superimposes on the light-emitting aperture OH and has a larger area than the light-emitting aperture OH. In other words, the bank opening BW-OH may have a larger area than the light-emitting region EA1 defined by the light-emitting aperture OH. On the other hand, in this specification, "corresponding" means that the two configurations superimpose when viewed from the thickness direction DR3 of the display panel DP, and is not limited to having the same area.

[0070] Optical control patterns CCP-R and CCP-B are arranged inside the bank opening BW-OH. At least a portion of optical control patterns CCP-R and CCP-B can alter the optical properties of the source light. In one embodiment, the first optical control pattern CCP-R may alter the optical properties of the source light.

[0071] The first optical control pattern CCP-R may include quantum dots to alter the optical properties of the source light. The first optical control pattern CCP-R may include quantum dots that convert the source light into light of other wavelengths. In the first optical control pattern CCP-R superimposed on the first pixel region PXA-R, the quantum dots may convert the source light, which is blue light, into red light.

[0072] In this specification, "quantum dot" refers to a crystal of a semiconductor compound. Quantum dots can emit light of various emission wavelengths depending on the size of the crystal. Quantum dots may also emit light of various emission wavelengths by adjusting the elemental ratio within the quantum dot compound.

[0073] The diameter of the quantum dot may be, for example, about 1 nm to 10 nm.

[0074] The quantum dots can be synthesized by wet chemical processes, organometallic chemical vapor deposition processes, molecular beam epitaxy processes, or similar processes.

[0075] The aforementioned wet chemical process involves mixing an organic solvent with a precursor material and then growing quantum dot particle crystals. During crystal growth, the organic solvent naturally acts as a dispersant coordinated to the surface of the quantum dot crystals, thereby regulating the crystal growth. Therefore, the wet chemical process is simpler than vapor deposition methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and allows for control of quantum dot particle growth through a low-cost process.

[0076] The core of the quantum dot can be selected from group II-VI compounds, group III-V compounds, group III-VI compounds, group I-III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.

[0077] Group II-VI compounds are binary compounds selected from the group consisting of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof, including CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgT The group may be selected from the group consisting of e, HgZnS, HeZnSe, HeZnTe, MgZnSe, MgZnS, and mixtures thereof, and from the group consisting of quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof. On the other hand, the group II-VI semiconductor compounds may further contain group I metals and / or group IV elements. The group I-II-VI compounds may be selected from CuSnS or CuZnS, and the group II-IV-VI compounds may be selected from ZnSnS, etc. The group I-II-IV-VI compounds may be selected from the group consisting of Cu2ZnSnS2, Cu2ZnSnS4, Cu2ZnSnSe4, Ag2ZnSnS2, and mixtures thereof.

[0078] Group III-VI compounds may include dielemental compounds such as In2S3 and In2Se3, trielemental compounds such as InGaS3 and InGaSe3, or any combination thereof.

[0079] Group I-III-VI compounds may be selected from the group consisting of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, and mixtures thereof, or from quaternary compounds such as AgInGaS2 and CuInGaS2.

[0080] Group III-V compounds can be selected from the group consisting of binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. On the other hand, Group III-V compounds may further contain Group II metals. For example, InZnP could be selected as a III-II-V group compound.

[0081] Group IV-VI compounds may be selected from the group consisting of binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof.

[0082] Examples of the aforementioned II-IV-V semiconductor compounds may be ternary compounds selected from the group consisting of ZnSnP, ZnSnP2, ZnSnAs2, ZnGeP2, ZnGeAs2, CdSnP2, and CdGeP2, and mixtures thereof.

[0083] Group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof. Group IV compounds may be binary compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0084] Each element in a multi-element compound, such as the binary, ternary, and quaternary compounds, can exist within the particles at uniform or non-uniform concentrations. In other words, the chemical formula represents the types of elements contained in the compound, and the elemental ratios within the compound can vary. For example, AgInGaS2 is AgIn x Ga 1-x This could mean S² (where X is a real number between 0 and 1).

[0085] In this case, binary, ternary, or quaternary compounds may exist within the particle at a uniform concentration, or they may be separated into states with partially different concentration distributions and exist within the same particle. Furthermore, one quantum dot may have a core / shell structure surrounding other quantum dots. In a core / shell structure, there may be a concentration gradient where the concentration of elements present in the shell decreases as you move towards the core.

[0086] In some embodiments, the quantum dot may have a core-shell structure comprising a core containing the nanocrystals described above, and a shell surrounding the core. The shell of the quantum dot may act as a protective layer to prevent chemical degradation of the core and maintain its semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. Examples of the shell of the quantum dot include metallic or nonmetallic oxides, semiconductor compounds, or combinations thereof.

[0087] For example, the metal or nonmetal oxides include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4, but the present invention is not limited to these.

[0088] Furthermore, examples of the semiconductor compound include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, and the like, but the present invention is not limited to these.

[0089] Quantum dots have an emission wavelength spectrum with a full width at half maximum (FWHM) of approximately 45 nm or less, preferably approximately 40 nm or less, and more preferably approximately 30 nm or less, and within this range, color purity and color reproducibility can be improved. Furthermore, since the light emitted through such quantum dots is emitted in all directions, the optical viewing angle can be improved.

[0090] Furthermore, the form of the quantum dots is not limited to those commonly used in this field, but more specifically, spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, or nanoplate-like particles may be used.

[0091] By adjusting the size of the quantum dots or the elemental ratio within the quantum dot compound, the energy band gap can be adjusted, allowing light in a variety of wavelengths to be obtained from the quantum dot light-emitting layer. Therefore, by using quantum dots as described above (either using quantum dots of different sizes or having different elemental ratios within the quantum dot compound), it is possible to realize a light-emitting device that emits light of various wavelengths. Specifically, the size of the quantum dots and the elemental ratio within the quantum dot compound can be selected to emit red, green, and / or blue light. Furthermore, the quantum dots can be configured to emit white light by combining light of various colors.

[0092] In one embodiment, quantum dots included in the first optical control pattern CCP-R superimposed on the first pixel region PXA-R may have a red emission color. The smaller the particle size of the quantum dots, the shorter the wavelength region they may emit light. For example, in quantum dots having the same core, the particle size of quantum dots emitting green light may be smaller than that of quantum dots emitting red light. Also, in quantum dots having the same core, the particle size of quantum dots emitting blue light may be smaller than that of quantum dots emitting green light. However, the embodiment is not limited to this, and even with quantum dots having the same core, the particle size can be adjusted by the shell forming material and shell thickness, etc.

[0093] On the other hand, if quantum dots emit light in a variety of colors such as blue, red, and green, then quantum dots with different emission colors may have different core materials.

[0094] The first optical control pattern CCP-R may further include a scatterer. The first optical control pattern CCP-R may include a quantum dot that converts blue light into red light and a scatterer that scatters light.

[0095] The scatterer may be inorganic particles. For example, the scatterer may contain at least one of TiO2, ZnO, Al2O3, SiO2, and hollow silica. The scatterer may contain at least one of TiO2, ZnO, Al2O3, SiO2, and hollow silica, or it may be a mixture of two or more substances selected from TiO2, ZnO, Al2O3, SiO2, and hollow silica.

[0096] The first light control pattern CCP-R may include a base resin that disperses quantum dots and scatterers. The base resin is the medium in which the quantum dots and scatterers are dispersed, and consists of various resin compositions generally referred to as binders. For example, the base resin may be an acrylic resin, a urethane resin, a silicone resin, an epoxy resin, etc. The base resin may be a transparent resin.

[0097] In this embodiment, the first light control pattern CCP-R can be formed by an inkjet process. A liquid composition is provided into the bank opening BW-OH. The composition, polymerized by a thermocuring or photocuring process, has a reduced volume after curing.

[0098] A step can occur between the lower surface of the bank BMP and the lower surface of the first light control pattern CCP-R. In other words, the lower surface of the bank BMP may be defined as lower than the lower surface of the first light control pattern CCP-R. The height difference between the lower surface of the bank BMP and the lower surface of the first light control pattern CCP-R may be, for example, about 2 μm to 3 μm.

[0099] The optical control layer CCL includes a barrier layer CAP1 positioned on one surface of the first optical control pattern CCP-R. The barrier layer CAP1 may serve to prevent the penetration of moisture and / or oxygen (hereinafter referred to as "moisture / oxygen") and to adjust the refractive index to improve the optical properties of the optical structure layer OSL. The barrier layer CAP1 may be positioned on one upper or lower surface of the first optical control pattern CCP-R to block the CCP-R from being exposed to moisture / oxygen, and in particular to block the quantum dots contained within the CCP-R from being exposed to moisture / oxygen. The barrier layer CAP1 may also protect the CCP-R from external impacts.

[0100] In one embodiment, the barrier layer CAP1 may be positioned separated from the display element layer DP-LED with the first light control pattern CCP-R in between. That is, the barrier layer CAP1 may be positioned on the upper surface of the first light control pattern CCP-R. In one embodiment, the light control layer CCL may include an additional barrier layer CAP2 positioned between the first light control pattern CCP-R and the display element layer DP-LED. The barrier layer CAP1 may cover the upper surface of the first light control pattern CCP-R adjacent to the low refractive index layer LR, and the additional barrier layer CAP2 may cover the lower surface of the first light control pattern CCP-R adjacent to the display element layer DP-LED. On the other hand, in this specification, "upper surface" may be the surface located above with respect to the third direction DR3, and "lower surface" may be the surface located below with respect to the third direction DR3.

[0101] Furthermore, barrier layer CAP1 and the additional barrier layer CAP2 may cover not only the first optical control pattern CCP-R but also one side of bank BMP.

[0102] Barrier layer CAP1 may cover one side of the bank BMP and the first light control pattern CCP-R adjacent to the low refractive index layer LR. Barrier layer CAP1 may be placed directly below the low refractive index layer LR. An additional barrier layer CAP2 may be placed following the step in the bank BMP and the first light control pattern CCP-R. The additional barrier layer CAP2 may be placed directly above the packed layer FML.

[0103] The barrier layer CAP1 and the additional barrier layer CAP2 may contain inorganic materials. In one embodiment of the display panel DP, the barrier layer CAP1 contains silicon oxynitride (SiON). Both the barrier layer CAP1 and the additional barrier layer CAP2 may contain silicon oxynitride. However, the embodiments are not limited to this, and the barrier layer CAP1 located above the first light control pattern CCP-R may contain silicon oxynitride, while the additional barrier layer CAP2 located below the first light control pattern CCP-R may contain silicon oxide (SiOx). However, the embodiments are not limited to this.

[0104] The silicon oxynitride barrier layer CAP1 prevents moisture / oxygen from penetrating the first light control pattern CCP-R, increases the durability of the film, and maintains a refractive index range that does not reduce the light efficiency of the display panel. To achieve this, the silicon, oxygen, and nitrogen content of the silicon oxynitride film is limited to a certain range. The content and detailed laminated structure of the barrier layer CAP1 in one embodiment will be described in detail below with reference to Figures 6a and 6b, etc.

[0105] A color filter layer CFL is placed on top of the light control layer CCL. The color filter layer CFL includes at least one color filter. The color filter transmits light in a specific wavelength range and blocks light outside that wavelength range. The first color filter layer CF1 of the first pixel region PXA-R can transmit red light and block green and blue light.

[0106] The first color filter CF1 comprises a base resin and a dye and / or pigment dispersed in the base resin. The base resin is a medium in which the dye and / or pigment is dispersed, and can consist of a variety of resin compositions generally referred to as binders.

[0107] The first color filter CF1 may have a uniform thickness within the first pixel region PXA-R. The light converted from blue source light to red light by the first light control pattern CCP-R can be supplied to the outside with uniform brightness within the first pixel region PXA-R.

[0108] The optical structure layer OSL includes a low refractive index layer LR. The low refractive index layer LR may be positioned between the light control layer CCL and the color filter CFL. The low refractive index layer LR is positioned above the light control layer CCL and can block the first light control pattern CCP-R from being exposed to moisture / oxygen. Alternatively, the low refractive index layer LR may be positioned between the light control pattern CCP-R and the first color filter CF1 to increase light extraction efficiency or to function as an optical functional layer, such as preventing reflected light from entering the light control layer CCL. The low refractive index layer LR may be a layer with a lower refractive index than adjacent layers.

[0109] The low-refractive-index layer LR may include at least one inorganic layer. For example, the low-refractive-index layer LR may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride, or a metal thin film with sufficient light transmittance. However, the examples are not limited to these, and the low-refractive-index layer LR may also include an organic film. The low-refractive-index layer LR may have a structure in which multiple hollow particles are dispersed in an organic polymer resin, for example. The low-refractive-index layer LR may consist of a single layer or multiple layers.

[0110] In one embodiment, the display panel DP may further include a base layer BL disposed on top of a color filter layer CFL. The base layer BL may be a component that provides a reference surface on which the color filter layer CFL, low refractive index layer LR, and light control layer CCL are arranged. The base layer BL may be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiment is not limited to these, and the base layer BL may be an inorganic layer, an organic layer, or a composite material layer. Also, contrary to the figures, the base layer BL may be omitted in one embodiment.

[0111] Although not shown, an anti-reflective layer may be placed on the base layer BL. The anti-reflective layer may be a layer that reduces the reflectivity of external light incident from the outside. The anti-reflective layer may be a layer that selectively transmits light emitted from the display panel DP. In one embodiment, the anti-reflective layer may be a single layer comprising dyes and / or pigments dispersed in the base resin. The anti-reflective layer may be provided as a single continuous layer superimposed across the entire surface of the first to third pixel regions PXA-R, PXA-B, PXA-G (see Figure 4a).

[0112] The anti-reflective layer may not include a polarizing layer. As a result, the light incident on the display element layer (DP-LED) through the anti-reflective layer may be unaltered. The display element layer (DP-LED) can receive unaltered light from above the anti-reflective layer.

[0113] In one embodiment, the display panel DP includes a lower panel containing a display element layer DP-LED and a display panel (optical structure layer OSL) containing a light control layer CCL and a color filter layer CFL. In one embodiment, a filling layer FML may be placed between the lower panel and the upper panel OSL. In one embodiment, the filling layer FML may fill the space between the display element layer DP-LED and the light control layer CCL. The filling layer FML may be placed directly on the encapsulation layer TFE, and an additional barrier layer CAP2 may be placed directly on the filling layer FML. The lower surface of the filling layer FML may be in contact with the upper surface of the encapsulation layer TFE, and the upper surface of the filling layer FML may be in contact with the lower surface of the additional barrier layer CAP2.

[0114] The filler layer FML can function as a buffer between the display element layer DP-LED and the light control layer CCL. In one embodiment, the filler layer FML can act as a shock absorber, thereby increasing the strength of the display panel DP. The filler layer FML may consist of a filler resin containing a polymer resin. For example, the filler layer FML may consist of a filler resin containing an acrylic resin or an epoxy resin.

[0115] The packed layer FML is a separate structure from the sealing layer TFE located at the bottom and the additional barrier layer CAP2 located at the top, and is formed in separate process steps. On the other hand, the packed layer FML may be made of different materials from the sealing layer TFE and the additional barrier layer CAP2.

[0116] Referring to Figure 4a, the display panel DP may include a base substrate BS and a circuit element layer DP-CL disposed on the base substrate BS. The circuit element layer DP-CL may be disposed on the base substrate BS. The circuit element layer DP-CL may include an insulating layer, a semiconductor pattern, a conductive pattern, and signal lines. The insulating layer, semiconductor layer, and conductive layer may be formed on the base substrate BS by methods such as coating and vapor deposition, and then the insulating layer, semiconductor layer, and conductive layer may be selectively patterned through multiple photolithography processes. Next, the semiconductor pattern, conductive pattern, and signal lines included in the circuit element layer DP-CL may be formed. In one embodiment, the circuit element layer DP-CL may include a transistor, a buffer layer, and a plurality of insulating layers.

[0117] An LED light-emitting element according to one embodiment may include a first electrode EL1, a second electrode EL2 facing the first electrode EL1, and a light-emitting layer EML disposed between the first electrode EL1 and the second electrode EL2. The light-emitting layer EML included in the LED light-emitting element may include an organic light-emitting material or quantum dots as the light-emitting material. The LED light-emitting element may further include a hole control layer HTR and an electron control layer ETR. On the other hand, although not shown, the LED light-emitting element may further include a capping layer (not shown) disposed on top of the second electrode EL2.

[0118] The pixel definition film PDL is placed on the circuit element layer DP-CL and may cover a portion of the first electrode EL1. An emission aperture OH is defined in the pixel definition film PDL. The emission aperture OH of the pixel definition film PDL exposes at least a portion of the first electrode EL1. In this embodiment, the emission regions EA1, EA2, and EA3 are defined to correspond to the portions of the first electrode EL1 exposed by the emission aperture OH.

[0119] The display element layer DP-LED may include a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3. The first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 may be regions separated by a pixel definition film PDL. The first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 may correspond to the first light-emitting region PXA-R, the second light-emitting region PXA-B, and the third light-emitting region PXA-G, respectively.

[0120] It is possible that the light-emitting regions EA1, EA2, and EA3 overlap with the pixel regions PXA-R, PXA-B, and PXA-G, but do not overlap with the bankwell region BWA. When viewed from a plane, the area of ​​the pixel regions PXA-R, PXA-B, and PXA-G, which are separated by the bank BMP, may be larger than the area of ​​the light-emitting regions EA1, EA2, and EA3, which are separated by the pixel definition film PDL.

[0121] In a light-emitting element LED, the first electrode EL1 is placed on the circuit element layer DP-CL. The first electrode EL1 may be an anode or a cathode. The first electrode EL1 may also be a pixel electrode. The first electrode EL1 may be a transmissive electrode, a semitransmissive electrode, or a reflective electrode.

[0122] The hole control layer (HTR) may be positioned between the first electrode (EL1) and the light-emitting layer (EML). The hole control layer (HTR) may include at least one of a hole injection layer, a hole transport layer, and an electron blocking layer. The hole control layer (HTR) may be positioned as a common layer superimposed on the entire light-emitting regions EA1, EA2, EA3 and the pixel-defining film (PDL) that separates the light-emitting regions EA1, EA2, EA3. However, the examples are not limited to this, and the hole control layer (HTR) may be patterned and provided to be positioned separately in relation to each of the light-emitting regions EA1, EA2, and EA3.

[0123] The light-emitting layer EML is placed on top of the hole control layer HTR. In one embodiment, the light-emitting layer EML may be provided as a common layer so as to be superimposed on the entire light-emitting regions EA1, EA2, EA3 and the pixel definition film PDL that separates the light-emitting regions EA1, EA2, EA3. In one embodiment, the light-emitting layer EML may emit blue light. The light-emitting layer EML may be superimposed on the entire hole control layer HTR and the electron control layer ETR.

[0124] However, the embodiments are not limited to these, and in one embodiment, the light-emitting layer EML may be placed within the light-emitting aperture OH. That is, the light-emitting layer EML may be formed separately to correspond to light-emitting regions EA1, EA2, and EA3 separated by the pixel-defining film PDL. Each of the light-emitting layers EML formed separately to correspond to light-emitting regions EA1, EA2, and EA3 may emit blue light or light in different wavelength regions.

[0125] The light-emitting layer (EML) may have a single layer made of a single material, a single layer made of multiple different materials, or a multilayer structure having multiple layers made of multiple different materials. The light-emitting layer (EML) may contain fluorescent or phosphorescent materials. In one embodiment of the light-emitting element, the light-emitting layer (EML) may include organic light-emitting materials, metal-organic complexes, or quantum dots as light-emitting materials. On the other hand, while Figures 3 and 4a show an exemplary light-emitting LED containing one light-emitting layer (EML), in one embodiment, the light-emitting LED may contain multiple light-emitting stacks, each containing at least one light-emitting layer.

[0126] Figure 5 is a cross-sectional view of a light-emitting element according to one embodiment of the present invention. Unlike the light-emitting element of one embodiment shown in Figures 3 and 4a, Figure 5 illustrates an example of a light-emitting element LED that includes multiple light-emitting stacks ST1, ST2, ST3, and ST4.

[0127] Referring to Figure 5, one embodiment of the light-emitting element LED may include a first electrode EL1, a second electrode EL2 facing the first electrode EL1, and a plurality of first to fourth light-emitting stacks ST1, ST2, ST3, ST4 positioned between the first electrode EL1 and the second electrode EL2. On the other hand, Figure 5 exemplifies a light-emitting element LED that includes four light-emitting stacks, but the number of light-emitting stacks included in the light-emitting element LED may be smaller or larger than this.

[0128] The light-emitting element LED may include first to third charge generation layers CGL1, CGL2, CGL3 arranged between first to fourth light-emitting stacks ST1, ST2, ST3, ST4.

[0129] The first to third charge generation layers CGL1, CGL2, and CGL3 can each generate charge (electrons and holes) by forming complexes through oxidation-reduction reactions when a voltage is applied. Next, the first to third charge generation layers CGL1, CGL2, and CGL3 can provide the generated charge to adjacent stacks ST1, ST2, ST3, and ST4, respectively. The first to third charge generation layers CGL1, CGL2, and CGL3 can double the efficiency of the current generated from adjacent stacks ST1, ST2, ST3, and ST4 and play a role in adjusting the charge balance among adjacent stacks ST1, ST2, ST3, and ST4.

[0130] Each of the first to third charge generation layers CGL1, CGL2, and CGL3 may include an n-type layer and a p-type layer. The first to third charge generation layers CGL1, CGL2, and CGL3 may have a structure in which an n-type layer and a p-type layer are joined to each other. However, the first to third charge generation layers CGL1, CGL2, and CGL3 may include only one of the n-type layer and the p-type layer. The n-type layer may be a charge generation layer that provides electrons to an adjacent stack. The n-type layer may be a layer in which the base material is doped with an n-dopant. The p-type layer may be a charge generation layer that provides holes to an adjacent stack.

[0131] In one embodiment, the thickness of each of the first to third charge generation layers CGL1, CGL2, and CGL3 may be between 1 Å and 150 Å. The concentration of the n-dopant doped into the first to third charge generation layers CGL1, CGL2, and CGL3 is between 0.1% and 3%, more specifically, 1% or less. If the concentration is less than 0.1%, hardening of the first to third charge generation layers CGL1, CGL2, and CGL3, which regulate the charge balance, may hardly occur. If the concentration is greater than 3%, the efficiency of the light-emitting element LED may decrease.

[0132] The first to third charge generation layers CGL1, CGL2, and CGL3 may each contain charge generation compounds consisting of arylamine-based organic compounds, metals, metal oxides, carbides, fluorides, or mixtures thereof. For example, arylamine-based organic compounds may include α-NPD, 2-TNATA, TDATA, MTDATA, spiro-TAD, or spiro-NPB. Metals may include cesium (Cs), molybdenum (Mo), vanadium (V), titanium (Ti), tungsten (W), barium (Ba), or lithium (Li). Metal oxides, carbides, and fluorides may include Re2O7, MoO3, V2O5, WO3, TiO2, Cs2CO3, BaF, LiF, or CsF. However, the materials of the first to third charge generation layers CGL1, CGL2, and CGL3 are not limited to the examples above.

[0133] Each of the first to fourth light-emitting stacks ST1, ST2, ST3, and ST4 may include a light-emitting layer. The first light-emitting stack ST1 may include a first light-emitting layer BEML-1, the second light-emitting stack ST2 may include a second light-emitting layer BEML-2, the third light-emitting stack ST3 may include a third light-emitting layer BEML-3, and the fourth light-emitting stack ST4 may include a fourth light-emitting layer BEML-4. Some of the light-emitting layers included in the first to fourth light-emitting stacks ST1, ST2, ST3, and ST4 may emit substantially the same color light, while others may emit different color light from each other.

[0134] In one embodiment, the first to third light-emitting layers BEML-1, BEML-2, and BEML-3 of the first to third light-emitting stacks ST1, ST2, and ST3 can emit substantially the same first color light. For example, the first color light may be the blue light that is the source light described above. The wavelength range of the light emitted by the first to third light-emitting layers BEML-1, BEML-2, and BEML-3 may be approximately 420 nm to 480 nm.

[0135] The fourth light-emitting layer GEML of the fourth light-emitting stack ST4 can emit a second color light different from the first color light. For example, the second color light may be green light. The wavelength range of the light emitted by the fourth light-emitting layer GEML may be between approximately 520 nm and 600 nm.

[0136] At least some of the first to fourth light-emitting layers, BEML-1, BEML-2, BEML-3, and GEML, may have a bilayer structure containing different host materials. For example, one layer of the bilayer structure may contain a hole-transporting host material, and the other may contain an electron-transporting host material. The electron-transporting host material may be a material that has an electron-transporting substructure within its molecular structure.

[0137] The first light-emitting stack ST1 may include a hole control layer HTR that transports holes provided from the first electrode EL1 to the first light-emitting layer BEML-1, and a first intermediate electron control layer METL1 that transports electrons generated from the first charge generation layer CGL1 to the first light-emitting layer BEML-1.

[0138] The hole control layer HTR may include a hole injection layer HIL placed on the first electrode EL1 and a hole transport layer HTL placed on the hole injection layer HIL. However, it is not limited to this, and the hole control layer HTR may further include at least one of a hole buffer layer, an emissive layer, and an electron blocking layer. The hole buffer layer may be a layer that compensates for the resonance distance due to the wavelength of light emitted from the emissive layer and increases the light emission efficiency. The electron blocking layer may be a layer that prevents electron injection from the electron control layer to the hole control layer.

[0139] The first intermediate electron control layer METL1 may include a first intermediate electron transport layer disposed on the first light-emitting layer BEML-1. However, it is not limited to this, and the first intermediate electron control layer METL1 may further include at least one of an electron buffer layer and a hole blocking layer.

[0140] The second light-emitting stack ST2 may include a first intermediate hole control layer MHTL1 that transports holes generated from the first charge generation layer CGL1 to the second light-emitting layer BEML-2, and a second intermediate electron control layer METL2 that transports electrons provided from the second charge generation layer CGL2 to the second light-emitting layer BEML-2.

[0141] The first intermediate hole control layer MHTL1 may include a first intermediate hole injection layer MHIL1 disposed on top of the first charge generation layer CGL1, and a first intermediate hole transport layer MHTL1 disposed on top of the first intermediate hole injection layer MHIL1. The first intermediate hole control layer MHTR1 may further include at least one of a hole buffer layer, an luminescence auxiliary layer, and an electron blocking layer disposed on top of the first intermediate hole transport layer MHTL1.

[0142] The second intermediate electron control layer METL2 may include a second intermediate electron transport layer disposed on top of the second light-emitting layer BEML-2. However, the second intermediate electron control layer METL2 may further include at least one of an electron buffer layer and a hole blocking layer disposed between the second intermediate electron transport layer and the second light-emitting layer BEML-2.

[0143] The third light-emitting stack ST3 may include a second intermediate hole control layer MHTL2 that transports holes generated from the second charge generation layer CGL2 to the third light-emitting layer BEML-3, and a third intermediate electron control layer METL3 that transports electrons provided from the third charge generation layer CGL3 to the third light-emitting layer BEML-3.

[0144] The second intermediate hole control layer MHTL2 may include a second intermediate hole injection layer MHIL2 disposed on the second charge generation layer CGL2 and a second intermediate hole transport layer MHTL2 disposed on the second intermediate hole injection layer MHIL2. However, the second intermediate hole control layer MHTL2 may further include at least one of a hole buffer layer, an luminescence auxiliary layer, and an electron blocking layer disposed on the second intermediate hole transport layer MHTL2.

[0145] The third intermediate electron control layer METL3 may include a third intermediate electron transport layer disposed on top of the third light-emitting layer BEML-3. However, the third intermediate electron control layer METL3 may further include at least one of an electron buffer layer and a hole blocking layer disposed between the third intermediate electron transport layer and the third light-emitting layer BEML-3.

[0146] The fourth light-emitting stack ST4 may include a third intermediate hole control layer MHTL3 that transports holes generated from the third charge generation layer CGL3 to the fourth light-emitting layer GEML, and an electron control layer ETR that transports electrons provided from the second electrode EL2 to the fourth light-emitting layer GEML.

[0147] The third intermediate hole control layer MHTL3 may include a third intermediate hole injection layer MHIL3 disposed on top of the third charge generation layer CGL3, and a third intermediate hole transport layer MHTL3 disposed on top of the third intermediate hole injection layer MHIL3. However, the third intermediate hole control layer MHTL3 may further include at least one of a hole buffer layer, an luminescence auxiliary layer, and an electron blocking layer disposed on top of the third intermediate hole transport layer MHTL3.

[0148] The electron control layer ETR may include an electron transport layer ETL disposed on the fourth light-emitting layer GEML and an electron injection layer EIL disposed on the electron transport layer ETL. However, the electron control layer ETR may further include at least one of an electron buffer layer and a hole blocking layer disposed between the electron transport layer ETL and the fourth light-emitting layer GEML.

[0149] In one embodiment, the light-emitting element LED can emit light from the first electrode EL1 to the second electrode EL2. With respect to the direction of light emission, the hole control layer HTR may be located at the bottom of the multiple light-emitting stacks ST1, ST2, ST3, ST4, and the electronic control layer ETR may be located at the top of the multiple light-emitting stacks ST1, ST2, ST3, ST4. However, the embodiment is not limited to this, and may have an inverted element structure in which, with respect to the direction of light emission, the electronic control layer ETR is located at the bottom of the multiple light-emitting stacks ST1, ST2, ST3, ST4, and the hole control layer HTR is located at the top of the multiple light-emitting stacks ST1, ST2, ST3, ST4.

[0150] Referring further to Figure 4a, the electron control layer ETR may be positioned between the light-emitting layer EML and the second electrode EL2. The electron control layer ETR may include at least one of an electron injection layer, an electron transport layer, and a hole blocking layer. Referring to Figure 4a, the electron control layer ETR may be positioned as a common layer superimposed on the entire light-emitting regions EA1, EA2, EA3 and the pixel-defining film PDL that separates the light-emitting regions EA1, EA2, EA3. However, the embodiment is not limited to this, and the electron control layer ETR may be provided patterned so as to be positioned separately corresponding to each of the light-emitting regions EA1, EA2, EA3.

[0151] The second electrode EL2 may be provided on the electronic control layer ETR. The second electrode EL2 may be a common electrode. The second electrode EL2 may be a cathode or an anode, but the examples are not limited to this. For example, if the first electrode EL1 is an anode, the second electrode may be a cathode, and if the first electrode EL1 is a cathode, the second electrode EL2 may be an anode. The second electrode EL2 may be a transmissive electrode, a semitransmissive electrode, or a reflective electrode.

[0152] The encapsulation layer TFE can be placed on the light-emitting element LED. Specifically, in one embodiment, the encapsulation layer TFE can be placed on the second electrode EL2. Also, if the light-emitting element LED includes a capping layer (not shown), the encapsulation layer TFE can be placed on the capping layer (not shown). As described above, the encapsulation layer TFE includes at least one organic film and at least one inorganic film, but the inorganic and organic films can be arranged alternately.

[0153] In one embodiment, the display panel DP may include an optical structure layer OSL disposed on top of the display element layer DP-LED. The optical structure layer OSL may include a light control layer CCL, a color filter layer CFL, and a base layer BL.

[0154] The light control layer (CCL) may contain photoconverters. These photoconverters may be quantum dots or phosphors. The photoconverters may wavelength-convert the provided light and emit it. In other words, the light control layer (CCL) may be a layer containing quantum dots in at least part of it, or a layer containing phosphors.

[0155] The light control layer CCL may contain multiple light control patterns CCP-R, CCP-B, and CCP-G. The light control patterns CCP-R, CCP-B, and CCP-G may be spaced apart from each other. The light control patterns CCP-R, CCP-B, and CCP-G may be spaced apart from each other by a bank BMP. The light control patterns CCP-R, CCP-B, and CCP-G may be placed within a bank opening BW-OH defined by the bank BMP. However, the embodiments are not limited to these. In Figure 4a, the bank BMP is shown to have a rectangular cross-section and not overlap with the light control patterns CCP-R, CCP-B, and CCP-G, but the edges of the light control patterns CCP-R, CCP-B, and CCP-G may overlap with the bank BMP in some respects. The bank BMP may have a rhomboid shape in cross-section. The bank BMP may have a shape in which the width in cross-section increases as it is adjacent to the display element layer DP-LED.

[0156] The light control patterns CCP-R, CCP-B, and CCP-G may be portions that convert the wavelength of light provided by the display element layer DP-LED or that transmit the provided light. The light control patterns CCP-R, CCP-B, and CCP-G may be formed by an inkjet process. A liquid ink composition may be provided in the bank opening BW-OH, and the provided ink composition may be polymerized by a thermocuring process or a photocuring process to form the light control patterns CCP-R, CCP-B, and CCP-G.

[0157] The light control layer CCL may include a first light control pattern CCP-R containing a first quantum dot that converts source light provided from the light-emitting element LED into a first term; a second light control pattern CCP-B that transmits source light; and a third light control pattern CCP-G containing a second quantum dot that converts source light into a second term.

[0158] In one embodiment, the first light control pattern CCP-R may provide red light, which is the first light, and the second light control pattern CCP-B may transmit and provide blue light, which is the source light provided by the light-emitting element LED. The third light control pattern CCP-G may provide green light, which is the second light. For example, the first quantum dot may be a red quantum dot, and the second quantum dot may be a green quantum dot.

[0159] Furthermore, the optical control layer CCL may further contain scatterers. The first optical control pattern CCP-R may contain a first quantum dot and a scatterer, the third optical control pattern CCP-G may contain a second quantum dot and a scatterer, and the second optical control pattern CCP-B may contain a scatterer but not quantum dots.

[0160] The first light control pattern CCP-R, the second light control pattern CCP-B, and the third light control pattern CCP-G may each include a base resin that disperses quantum dots and scatterers. In one embodiment, the first light control pattern CCP-R may include first quantum dots and scatterers dispersed in the base resin, the third light control pattern CCP-G may include second quantum dots and scatterers dispersed in the base resin, and the second light control pattern CCP-B may include scatterers dispersed in the base resin.

[0161] The optical control layer CCL includes a barrier layer CAP1 positioned on one side of the optical control pattern. The optical control layer CCL may include a barrier layer CAP1 separated from the display element layer DP-LED with the optical control pattern CCP-R in between, and an additional barrier layer CAP2 adjacent to the display element layer DP-LED.

[0162] In the display panel DP, the optical structure layer OSL includes a color filter layer CFL positioned on top of the optical control layer CCL. The color filter layer CFL may include color filters CF1, CF2, and CF3. The color filter layer CFL may include a first color filter CF1 that transmits first light, a second color filter CF2 that transmits source light, and a third color filter CF3 that transmits second light. In one embodiment, the first color filter CF1 may be a red filter, the second color filter CF2 may be a blue filter, and the third color filter CF3 may be a green filter.

[0163] Filters CF1, CF2, and CF3 each contain a polymer photosensitive resin and a colorant. The first color filter CF1 may contain a red colorant, the second color filter CF2 may contain a blue colorant, and the third color filter CF3 may contain a green colorant. The first color filter section CF1 may contain a red pigment or red dye, the second color filter section CF2 may contain a blue pigment or blue dye, and the third color filter section CF3 may contain a green pigment or green dye.

[0164] The first to third color filters CF1, CF2, and CF3 can be arranged to correspond to the first pixel area PXA-R, the second pixel area PXA-B, and the third pixel area PXA-G, respectively. Furthermore, the first to third color filters CF1, CF2, and CF3 can be arranged to correspond to the first to third optical control patterns CCP-R, CCP-B, and CCP-G, respectively.

[0165] Furthermore, in the peripheral region NPXA located between pixel regions PXA-R, PXA-B, and PXA-G, multiple color filters CF1, CF2, and CF3 that transmit different types of light may be superimposed. Multiple color filters CF1, CF2, and CF3 are superimposed in the third direction DR3, which is the thickness direction, and can demarcate the boundary between adjacent pixel regions PXA-R, PXA-B, and PXA-G. On the other hand, contrary to the figures, the color filter layer CFL may further include a light-shielding portion (not shown) to demarcate the boundary between adjacent color filters CF1, CF2, and CF3. The light-shielding portion (not shown) may be formed of a blue filter, or may be formed by including an organic light-shielding material or an inorganic light-shielding material containing a black pigment or black dye.

[0166] The optical structure layer (OSL) may include a low-refractive-index layer (LR) positioned between the light control layer (CCL) and the color filter layer (CFL). The low-refractive-index layer (LR) may be positioned between the light control patterns CCP-R, CCP-B, and CCP-G and the color filters CF1, CF2, and CF3. The low-refractive-index layer (LR) is positioned above the light control layer (CCL) and can block the light control patterns CCP-R, CCP-B, and CCP-G from being exposed to moisture / oxygen. Alternatively, the low-refractive-index layer (LR) may function as an optical functional layer, either by being positioned between the light control patterns CCP-R, CCP-B, and CCP-G and the color filters CF1, CF2, and CF3 to increase light extraction efficiency or by preventing reflected light from entering the light control layer (CCL). The low-refractive-index layer (LR) may have a lower refractive index than other adjacent layers.

[0167] The low-refractive-index layer LR may include at least one inorganic layer. For example, the low-refractive-index layer LR may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride, or a metal thin film with sufficient light transmittance. However, the examples are not limited to these, and the low-refractive-index layer LR may also include an organic film. The low-refractive-index layer LR may have a structure in which multiple hollow particles are dispersed in an organic polymer resin, for example. The low-refractive-index layer LR may consist of a single layer or multiple layers.

[0168] In one embodiment, the optical structure layer OSL may further include a base layer BL disposed on top of the color filter layer CFL. The base layer BL may be a component that provides a base surface on which the color filter layer CFL and the optical control layer CCL are disposed. The base layer BL may be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiment is not limited to these, and the base layer BL may be an inorganic layer, an organic layer, or a composite material layer. Also, contrary to the figures, the base layer BL may be omitted in one embodiment.

[0169] Figures 4b and 4c are enlarged views showing a portion of the cross-section of a display panel according to one embodiment of the present invention. Figures 4b to 4c show the display panel DP of one embodiment shown in Figure 4a and the display panels DP-1 and DP-2 of other embodiments, respectively.

[0170] Referring to Figure 4b, a display panel DP-1 according to one embodiment may include a base substrate BS, a lower panel including a circuit element layer DP-CL disposed on the base substrate BS, and a display element layer DP-LED disposed on the circuit element layer DP-CL, and an optical structure layer OSL-1 disposed on the lower panel. In the display panel DP-1 according to one embodiment, the optical structure layer OSL-1 may include a light control layer CCL-1 sequentially laminated on a thin film encapsulation layer TFE, a low refractive index layer LR-1, a color filter layer CFL-1, and a base layer BL-1. The optical structure layer OSL-1 may include a barrier layer CAP1 and an additional barrier layer CAP2 disposed on the upper and lower surfaces of the light control layer CCL-1.

[0171] The optical control layer CCL-1 may be placed on top of the display element layer DP-LED and the thin film encapsulation layer TFE, with an additional barrier layer CAP2 in between. The optical control layer CCL-1 may include a plurality of bank BMPs and optical control patterns CCP-B, CCP-G, and CCP-R placed between the bank BMPs. A low refractive index layer LR may be placed on top of the optical control layer CCL-1.

[0172] The color filter layer CFL-1 may include multiple color filters CF1, CF2, CF3 and a light-shielding section BM.

[0173] Compared to the display panel DP shown in Figure 4a, the display panel DP-1 according to one embodiment shown in Figure 4b is an embodiment in which the optical control layer CCL-1, the low refractive index layer LR, and the color filter layer CFL-1 are arranged with the upper surface of the thin film encapsulation layer TFE as the base surface. In other words, the optical control patterns CCP-B, CCP-G, and CCP-R of the optical control layer CCL-1 may be arranged on the thin film encapsulation layer TFE in a continuous process, and the multiple color filters CF1, CF2, and CF3 may be formed sequentially on the optical control layer CCL-1 in a continuous process. The optical control layer CCL-1 is formed with the upper surface of an additional barrier layer CAP2 arranged on the thin film encapsulation layer TFE as the base surface, and may have an inverted shape compared to the optical control layer CCL shown in Figure 4a. Specifically, each of the multiple banks BMP and the multiple optical control patterns CCP-B, CCP-G, and CCP-R may have an inverted shape compared to those shown in Figure 4a. The color filter layer CFL-1 is formed with the upper surface of the light control layer CCL-1 as its base surface, and may have a different shape from that shown in Figure 4a.

[0174] In one embodiment of the color filter layer CFL-1, the light-shielding portion BM may be a black matrix. The light-shielding portion BM may be formed by including an organic or inorganic light-shielding material containing a black pigment or black dye. The light-shielding portion BM may prevent light leakage and demarcate the boundaries between adjacent color filters CF-B, CF-G, and CF-R.

[0175] Referring to Figure 4c, in one embodiment, the display element layer DP-ED1 included in the display panel DP-2 includes a light-emitting element LED-1, which may be a micro LED or a nano LED. The light-emitting element LED-1 is positioned between the pixel definition films PDL and may be electrically connected to the contact portion SC, but the length and width of the light-emitting element LED-1 may be between several hundred nanometers and several hundred micrometers. The light-emitting element LED-1 may be an LED element comprising an active layer and at least one semiconductor material layer. The light-emitting element LED-1 may further include an insulating layer covering the surface of the semiconductor material layer. The light-emitting element LED-1 may be patterned and positioned to superimpose on pixel regions PXA-R, PXA-B, and PXA-G, respectively. The display panel DP may include a buffer layer BFL positioned on top of the light-emitting element LED-1. The buffer layer BFL may be positioned on top of the light-emitting element LED-1 and cover it. On the other hand, in the display panel DP-2 of one embodiment shown in Figure 4c, the buffer layer BFL may be omitted.

[0176] Figure 6a is a cross-sectional view of a part of the configuration of a display panel according to one embodiment of the present invention. Figure 6b is an enlarged cross-sectional view of a part of the configuration of a display panel according to one embodiment of the present invention. Figure 6a shows an enlarged view of a part of the configuration of the optical control layer CCL, barrier layer CAP1, additional barrier layer CAP2, low refractive index layer LR, and color filter layer CFL included in the optical structure layer OSL of the display panel DP of one embodiment shown in Figure 3. Figure 6b shows an enlarged and simplified view of the barrier layer CAP1 and its adjacent configuration shown in Figure 6a. Hereinafter, when describing the barrier layer CAP1 included in the optical structure layer OSL of one embodiment using Figures 6a and 6b, the third optical control pattern CCP-G will be referred to as the "optical control pattern". On the other hand, Figures 6a and 6b show the configuration shown in Figures 3 and 4a, etc., rotated by 180°, and the surface located above Figures 6a and 6b is described as the "bottom surface", and the surface located below Figures 6a and 6b is described as the "top surface".

[0177] Referring to Figures 3, 4a, 6a, and 6b, as described above, the optical structure layer OSL includes a barrier layer CAP1 positioned on one surface of the optical control pattern CCP-G. The barrier layer CAP1 may be positioned between the optical control pattern CCP-G and the low refractive index layer LR. In other words, the barrier layer CAP1 may be positioned on the upper surface of the optical control pattern CCP-G.

[0178] The barrier layer CAP1 may be positioned on the upper surface of the light control pattern CCP-G and the bank BMP. In other words, the barrier layer CAP1 may be in contact with the upper surface of the light control pattern CCP-G and the bank BMP.

[0179] The barrier layer CAP1 is positioned between the light control pattern CCP-G and the low refractive index layer LR, and may be positioned directly beneath the low refractive index layer LR. The barrier layer CAP1 may be in contact with the lower surface LR-L of the low refractive index layer LR.

[0180] The barrier layer CAP1 has a multi-layer structure, and each of the multiple layers contained in the barrier layer CAP1 contains silicon oxynitride (SiON). The barrier layer CAP1 may have a multi-layer structure that is separated from each other by defined interfaces. The barrier layer CAP1 has a multi-layer structure to prevent moisture / oxygen from penetrating the light control pattern CCP-R, increase the durability of the film, and have a refractive index range that does not reduce the light efficiency of the display panel, and limits the composition ratio of silicon, oxygen, and nitrogen in the silicon oxynitride film to a certain range.

[0181] In one embodiment, the barrier layer CAP1 includes a first layer CAP1-1, a second layer CAP1-2, and a third layer CAP1-3, which are sequentially laminated starting from the low refractive index layer LR. Each of the first layer CAP1-1, the second layer CAP1-2, and the third layer CAP1-3 contains silicon oxynitride.

[0182] The first layer CAP1-1 is positioned adjacent to the low refractive index layer LR and is in contact with a silicon oxynitride film with a relatively high oxygen content. The first layer CAP1-1 may be a layer positioned directly below the low refractive index layer LR. The first layer CAP1-1 may be in contact with the low refractive index layer LR. The upper surface U1 of the first layer CAP1-1 may be in contact with the lower surface LR-L of the low refractive index layer LR.

[0183] The first layer CAP1-1 is a layer with a low nitrogen content, specifically less than 1 at%. For example, the first layer CAP1-1 may have a nitrogen content of 0.1 at% to 0.7 at%. The silicon oxynitride contained in the first layer CAP1-1 has a composition ratio of less than 1 at% nitrogen, 45 at% to 70 at% oxygen, and 30 at% to 55 at% silicon. For example, the silicon oxynitride contained in the first layer CAP1-1 may have a composition ratio of 0.5 at% or less nitrogen, 58 at% to 70 at% oxygen, and 30 at% to 42 at% silicon. The first layer CAP1-1 has a relatively low concentration of nitrogen atoms, which can prevent film degradation under high temperature and high humidity conditions. Furthermore, it is characterized by the absence of defects such as unevenness and lifting, and low outgassing.

[0184] The second layer CAP1-2 is positioned on top of the first layer CAP1-1 and is in contact with a silicon oxynitride film with a relatively high nitrogen content. The second layer CAP1-2 may be positioned separated from the low refractive index layer LR with the first layer CAP1-1 in between. The second layer CAP1-2 may be positioned directly below the first layer CAP1-1. The second layer CAP1-2 and the first layer CAP1-1 may be in contact. The upper surface U2 of the second layer CAP1-2 may be in contact with the lower surface L1 of the first layer CAP1-1.

[0185] The second layer CAP1-2 is a layer with a high nitrogen content, with the nitrogen content of the second layer CAP1-2 being between 3 at% and 30 at%. For example, the second layer CAP1-2 may have a nitrogen content of between 15 at% and 22 at%. The silicon oxynitride contained in the second layer CAP1-2 has a composition ratio of 3 at% to less than 30 at% nitrogen, 25 at% to 50 at% oxygen, and 30 at% to 55 at% silicon. For example, the silicon oxynitride contained in the second layer CAP1-2 may have a composition ratio of 15 at% to 22 at% nitrogen, 38 at% to 48 at% oxygen, and 30 at% to 42 at% silicon. The second layer CAP1-2 has a relatively high concentration and nitrogen atom composition, and exhibits high rigidity properties in plasma. By including a barrier layer CAP1 containing a second layer CAP1-2 within the optical structure layer OSL, damage to the organic matter contained in the low-refractive-index layer LR due to plasma applied during the formation of the barrier layer CAP1 can be prevented. Furthermore, by satisfying the aforementioned composition ratio of the second layer CAP1-2, the amount of moisture adsorption on the surface is reduced, resulting in excellent moisture barrier properties.

[0186] The third layer CAP1-3 is positioned on top of the second layer CAP1-2 and is in contact with a silicon oxynitride film with a relatively high oxygen content. The third layer CAP1-3 may be a layer positioned directly below the second layer CAP1-2. The third layer CAP1-3 and the second layer CAP1-2 may be in contact. The upper surface U3 of the third layer CAP1-3 may be in contact with the lower surface L2 of the second layer CAP1-2. In other words, the third layer CAP1-3 may be positioned directly above the light control pattern CCP-G positioned below it. The third layer CAP1-3 may be in contact with the light control pattern CCP-G positioned below it. The lower surface L3 of the third layer CAP1-3 may be in contact with the upper surface of the light control pattern CCP-G.

[0187] The third layer CAP1-3 is a layer with a low nitrogen content, with a nitrogen content of less than 1 at%. For example, the third layer CAP1-3 may have a nitrogen content of 0.1 at% to 3 at%. The silicon oxynitride contained in the third layer CAP1-3 has a composition ratio of less than 3.2 at% nitrogen, 45 at% to 70 at% oxygen, and 30 at% to 55 at% silicon. For example, the silicon oxynitride contained in the third layer CAP1-3 may have a composition ratio of 0.5 at% or less nitrogen, 58 at% to 70 at% oxygen, and 30 at% to 42 at% silicon. The third layer CAP1-3 has a relatively low concentration of nitrogen atoms, which can prevent film quality degradation under high temperature and high humidity conditions. It also has the characteristics of not causing defects such as unevenness and lifting, and having a low amount of outgassing. Furthermore, by satisfying the aforementioned composition ratio, the third layer CAP1-3 has a low refractive index, which can improve the light emission efficiency of the display panel.

[0188] In the silicon oxynitride contained in the first layer CAP1-1 and the silicon oxynitride contained in the second layer CAP1-2, the nitrogen content of the second layer CAP1-2 is between 3 and 60 times the nitrogen content of the first layer CAP1-1. For example, the nitrogen content of the second layer CAP1-2 may be between 15 and 40 times the nitrogen content of the first layer CAP1-1. The barrier layer CAP1 is positioned so that the first layer CAP1-1, which has a relatively low nitrogen content, is adjacent to the low refractive index layer LR, thereby preventing film degradation under high temperature and high humidity conditions and effectively blocking moisture that enters from the low refractive index layer LR.

[0189] The total thickness of barrier layer CAP1 may be between 2000 Å and 12000 Å.

[0190] The thickness d1 of the first layer CAP1-1 may be between 500 Å and 5000 Å. If the thickness d1 of the first layer CAP1-1 is less than 500 Å, film quality deformation may occur, causing the barrier layer CAP1 to expand under high temperature and high humidity conditions, which may reduce the moisture barrier properties of the barrier layer CAP1. If the thickness d1 of the first layer CAP1-1 exceeds 500 Å, it may be difficult to achieve a film with uniform thickness and composition during the manufacturing process, which may reduce the film's properties. Furthermore, the thick barrier layer CAP1 may increase the stress on the optical structure layer OSL, potentially causing damage to the substrate.

[0191] The thickness d of the second layer CAP1-2 may be between 600 Å and 5000 Å. If the thickness d of the second layer CAP1-2 is less than 600 Å, damage to the low refractive index layer LR may occur due to the plasma applied during the film formation process. If the thickness d of the second layer CAP1-2 exceeds 5000 Å, it may be difficult to achieve a film with uniform thickness and composition during the process, potentially degrading the film's properties. Furthermore, the thick barrier layer CAP1 may increase the stress on the optical structure layer OSL, potentially causing substrate damage.

[0192] The thickness d3 of the third layer CAP1-3 may be between 500 Å and 5000 Å. If the thickness d3 of the third layer CAP1-3 is less than 500 Å, the recycling of light by the third layer CAP1-3, which has a low refractive index, may not be realized. If the thickness d3 of the third layer CAP1-3 exceeds 500 Å, it may be difficult to realize a film with uniform thickness and composition in the process, which may degrade the film's properties, and the stress on the optical structure layer OSL due to the thick barrier layer CAP1 may increase, potentially causing damage to the substrate.

[0193] The third layer CAP1-3 contained in the barrier layer CAP1 may have a lower refractive index than the adjacent layer. The third layer CAP1-3 may have a lower refractive index than the adjacent second layer CAP1-2 and the optical control pattern CCP-G.

[0194] The refractive index of the third layer CAP1-3 may be between 1.3 and 1.5. For example, the third layer CAP1-3 may have a refractive index of between 1.3 and 1.5 for light in the wavelength range of 400 nm to 700 nm.

[0195] The refractive index of the first layer CAP1-1 may be between 1.3 and 1.5. For example, the first layer CAP1-1 may have a refractive index of between 1.3 and 1.5 for light in the wavelength range of 400 nm to 700 nm.

[0196] The refractive index of the second layer CAP1-2 may be between 1.4 and 1.8. For example, the second layer CAP1-2 may have a refractive index of between 1.4 and 1.8 for light in the wavelength range of 400 nm to 700 nm.

[0197] In one embodiment, the third layer CAP1-3 included in the barrier layer CAP1 has a lower refractive index than the adjacent light control pattern CCP-G, and the difference between the refractive index of the third layer CAP1-3 and the refractive index of the light control pattern CCP-G may be between 0.1 and 0.25. For example, the difference between the refractive index of the third layer CAP1-3 and the refractive index of the light control pattern CCP-G may be between 0.15 and 0.2. In one embodiment, the refractive index of the light control pattern CCP-G may be between 1.5 and 1.7.

[0198] In one embodiment, the refractive index of the third layer CAP1-3 contained in the barrier layer CAP1 is adjusted to be lower than the refractive index of the light control pattern CCP-G, while the difference between the refractive index of the third layer CAP1-3 and the refractive index of the light control pattern CCP-G can be adjusted to 0.1 or more. Specifically, in one embodiment, the refractive index of the third layer CAP1-3 can be adjusted to be 0.1 or more lower than the refractive index of the light control pattern CCP-G by combining the composition ratios of silicon, oxygen, and nitrogen as described above. This can increase the light extraction efficiency of the light control pattern CCP-G and prevent reflected light from entering the light control pattern CCP-G.

[0199] In one embodiment, the first layer CAP1-1 included in the barrier layer CAP1 may have a higher refractive index than the adjacent low refractive index layer LR. The low refractive index layer LR may have a low refractive index of 1.3 or less for light in the wavelength range of 400 nm to 700 nm. The first layer CAP1-1 has a higher refractive index than the adjacent low refractive index layer LR, which can cause the low refractive index layer LR to have increased light extraction efficiency and anti-reflection properties.

[0200] The light-controlling layer CCL according to one embodiment may further include an additional barrier layer CAP2. The additional barrier layer CAP2 may be located below the light-controlling pattern CCP-G. More specifically, the additional barrier layer CAP2 may be located between the light-controlling pattern CCP-G and the packed layer FML.

[0201] The additional barrier layer CAP2 may contain silicon oxynitride, just like barrier layer CAP1. In the additional barrier layer CAP2 containing silicon oxynitride, the composition ratios of silicon, oxygen, and nitrogen may be within the same range as the composition ratios of any one of the multiple layers contained in barrier layer CAP1 described above. The additional barrier layer CAP2 contains silicon oxynitride and may have the same composition ratio as the first layer CAP1-1, with nitrogen less than 1 at%, oxygen between 45 at% and 70 at%, and silicon between 30 at% and 55 at%. However, it is not limited to this, and the additional barrier layer CAP2 may contain silicon oxynitride but have a composition ratio that is different from the composition ratios of silicon, oxygen, and nitrogen of the multiple layers contained in barrier layer CAP1. Alternatively, the additional barrier layer CAP2 may not contain silicon oxynitride and may contain silicon oxide or silicon nitride. The additional barrier layer CAP2 may also contain titanium oxide or aluminum oxide, etc.

[0202] The additional barrier layer CAP2 may have a lower refractive index than the adjacent light control pattern CCP-G. The refractive index of the additional barrier layer CAP2 may be between 1.3 and 1.8. For example, the additional barrier layer CAP2 may have a refractive index between 1.4 and 1.5 for light in the wavelength range of 400 nm to 700 nm.

[0203] In one embodiment, the additional barrier layer CAP2 has a lower refractive index than the adjacent light control pattern CCP-G, and the difference between the refractive index of the additional barrier layer CAP2 and the refractive index of the light control pattern CCP-G may be between 0.1 and 0.25. For example, the difference between the refractive index of the additional barrier layer CAP2 and the refractive index of the light control pattern CCP-G may be between 0.15 and 0.2. In one embodiment, the refractive index of the light control pattern CCP-G may be between 1.6 and 1.95. This can induce total internal reflection of light moving from the light control pattern CCP-G towards the additional barrier layer CAP2, and enable recycling of light traveling downwards. Therefore, the high-efficiency conversion efficiency of the light control pattern CCP-G can be increased, and the display efficiency of the display panel can be improved when applied to a display panel.

[0204] In one embodiment, the additional barrier layer CAP2 has a refractive index lower than that of the packed layer FML, while the difference between the refractive index of the additional barrier layer CAP2 and that of the packed layer FML can be adjusted to 0.1 or less. Specifically, in one embodiment, the additional barrier layer CAP2 can be adjusted by adjusting the composition ratio of silicon, oxygen, and nitrogen as described above, so that the refractive index of the additional barrier layer CAP2 is lower than that of the packed layer FML, but the difference is within the range of 0.1 or less. This prevents the problem that light traveling from the packed layer FML towards the additional barrier layer CAP2 has its path altered by refraction and total internal reflection, preventing it from proceeding to the optical control pattern CCP-G side.

[0205] The thickness of the additional barrier layer CAP2 may be between 2000 Å and 12000 Å. For example, the additional barrier layer CAP2 may have a thickness d2 of between 4000 Å% and 8000 Å. If the thickness of the additional barrier layer CAP2 is less than 2000 Å, the barrier control of moisture and oxygen will decrease, allowing moisture to penetrate the optical control pattern CCP-G, reducing durability and potentially causing defects such as lifting or cracking. If the thickness of the additional barrier layer CAP2 exceeds 12000 Å, it may become difficult to achieve a film with uniform thickness and composition during the manufacturing process, potentially degrading the film's properties. Furthermore, the increased stress on the optical structure layer OSL due to the thick additional barrier layer CAP2 may lead to substrate damage.

[0206] A barrier layer CAP1 according to one embodiment of the present invention has a multi-layer structure containing silicon oxynitride, and by adjusting the nitrogen content of each layer to be different, it exhibits excellent moisture and oxygen barrier properties, superior film durability under high temperature and high humidity conditions, and can prevent defects such as film degradation and cracking due to external factors. Furthermore, by adjusting the refractive index of the barrier layer CAP1 to correspond to the refractive index of adjacent layers, the optical conversion efficiency of the optical control pattern can be improved. More specifically, the barrier layer CAP1 includes a structure in which a first layer CAP1-1 with a relatively low nitrogen content, a second layer CAP1-2 with a relatively high nitrogen content, and a third layer CAP1-3 with a relatively low nitrogen content and a low refractive index are sequentially stacked, which can prevent film degradation under high temperature and high humidity conditions, effectively block moisture entering from the low refractive index layer LR, and prevent damage to the low refractive index layer LR by plasma applied when forming the barrier layer CAP1. Furthermore, the third layer CAP-3, which has a low refractive index, can improve the light emission efficiency of the optical structure layer OSL, which includes the barrier layer CAP1, and the display panel DP.

[0207] The low refractive index layer LR is positioned above the barrier layer CAP with respect to the third direction DR3 and may have a structure in which multiple hollow particles are dispersed in the organic base layer. As shown in Figure 6b, the low refractive index layer LR may include a base resin PY and multiple hollow particles VD dispersed in the base resin PY. The low refractive index layer LR may contain multiple hollow particles VD and have a low refractive index.

[0208] Based on the total weight of the low-refractive index layer LR, the weight of the base resin PY may be between 50 wt% and 90 wt%. The base resin PY may contain at least one of acrylic resins, silicone resins, and epoxy resins. For example, the base resin PY may contain silicone acrylate.

[0209] In one embodiment, the hollow particles VD may be derived from porogen. The low refractive index layer LR may consist of a composition of a polymer resin and porogen. The polymer resin of the composition may be solidified to form a base resin PY, and the porogen may be thermally decomposed to form the hollow particles VD. The hollow particles VD made of porogen may be spherical. The hollow particles VD may be in a vacuum or contain a very small amount of gas. Alternatively, each hollow particle VD may be filled with air or liquid.

[0210] Based on the total weight of the low refractive index layer LR, the porogen may be supplied in an amount of 10 wt% to 40 wt%. A low refractive index layer LR containing hollow particles VD consisting of 10 wt% to 30 wt% porogen may satisfy the refractive index range of the low refractive index layer LR according to one embodiment and exhibit excellent durability.

[0211] Although not shown in the diagram, the low refractive index layer LR may further contain additional materials such as inorganic particles in addition to the base resin PY and hollow particles VD. The inorganic particles may include, for example, at least one of SiO2, MgF2, and Fe3O4.

[0212] The low refractive index (LR) layer can be formed by methods such as slit coating, spin coating, roll coating, spray coating, and inkjet printing. However, this is merely an example, and the method of forming the low refractive index (LR) layer is not limited to these. The low refractive index (LR) layer can also be formed using various methods such as the transfer method.

[0213] The low-refractive-index layer LR may have a lower refractive index than its adjacent components. The refractive index of the low-refractive-index layer LR may be lower than the refractive index of the optical control pattern CCP-G contained in the optical control layer CCL and the barrier layer CAP1. In one embodiment, the refractive index of the low-refractive-index layer LR may be between 1.21 and 1.25. The low-refractive-index layer LR can totally reflect a portion of the blue light emitted from the optical control layer CCL towards the color filter layer CFL and re-incidentate it back into the optical control layer CCL. The low-refractive-index layer LR with a refractive index between 1.21 and 1.25 may exhibit properties that facilitate total reflection due to the difference in refractive index with that of the optical control layer CCL.

[0214] The low refractive index (LR) layer may have a haze value of less than 0.40%. A low refractive index (LR) layer with a haze value of less than 0.40% may be optically transparent.

[0215] Figure 7 is a cross-sectional view of a part of the display panel according to one embodiment of the present invention. In Figure 7, the cross-section corresponding to Figure 6a shows an optical structure layer of a different embodiment from the optical structure layer OSL shown in Figure 6a.

[0216] Referring to Figure 7, the second layer CAP1-2' included in the barrier layer CAP1' may have multiple layer structures. The second layer CAP1-2' may include the 2-1 layer CAP1-21, which is positioned adjacent to the first layer CAP1-1', and the 2-2 layer CAP1-22, which is positioned between the 2-1 layer CAP1-21 and the third layer CAP1-3. On the other hand, while Figure 7 exemplifies a second layer CAP1-2' having multiple layer structures that includes two layers, it is not limited to this, and the second layer CAP1-2' may include three or more layers.

[0217] Each of the 2-1 layer CAP1-21 and the 2 layer CAP1-22 contains silicon oxynitride, but may have different composition ratios. Each of the 2-1 layer CAP1-21 and the 2 layer CAP1-22 may have different nitrogen content. Each of the 2-1 layer CAP1-21 and the 2 layer CAP1-22 conforms to the limited range of silicon, oxygen, and nitrogen composition ratios of the 2 layer CAP1-2' described above, but may have different composition ratios. Each of the 2-1 layer CAP1-21 and the 2 layer CAP1-22 contained in the 2 layer CAP1-2' may have silicon, oxygen, and nitrogen composition ratios adjusted to different ranges in order to improve the durability and optical properties of the optical structure layer OSL.

[0218] Table 1 below shows the results of evaluating the reliability of the laminated structure of the display panel including the barrier layer described above, and the content of each layer, under high temperature and high humidity conditions. In Table 1, the barrier layer of the example has a laminated structure of three layers, the first layer, the second layer, and the third layer, as shown in Figures 6a and 6b, while the barrier layer of the comparative example has a laminated structure of two layers, unlike the example. On the other hand, the reliability was evaluated by leaving the panels at 95°C and 85% humidity for 500 hours and checking whether or not delamination of the barrier layer occurred. If delamination occurred, it was evaluated as "defective".

[0219] [Table 1] Referring to the results in Table 1, it can be confirmed that in the case of a two-layer barrier layer as in the comparative example, a defect occurred where the barrier layer lifted under high temperature and high humidity conditions, but in the case of the example, no defect occurred where the barrier layer lifted under high temperature and high humidity conditions. Based on the results in Table 1, it can be confirmed that in the case of the barrier layer of the example, by forming one layer adjacent to the low refractive index layer with a nitrogen content of less than 1 at%, lifting of the barrier layer due to moisture permeation does not occur under high temperature and high humidity reliability evaluation conditions. As a result, it can be expected that the reliability and durability of the optical structure layer and display panel including the barrier layer of the example will increase.

[0220] Although preferred embodiments of the present invention have been described so far with reference, a person skilled in the art or a person with ordinary knowledge in the art will understand that the present invention can be modified and altered in various ways without departing from the spirit and technical scope of the invention as described in the claims below. Therefore, the technical scope of the present invention should not be limited to what is described in the detailed description of the specification, but should be determined by the claims. [Industrial applicability]

[0221] Recent display devices include different types of light control patterns for each pixel to generate color images, resulting in a wide viewing angle and excellent color reproduction. However, in display devices that include light control patterns, light-emitting elements such as quantum dots included in the light control pattern may corrode due to moisture and oxygen, reducing the light conversion efficiency and thereby lowering the display efficiency of the display panel. A display panel according to one embodiment of the present invention has excellent moisture and oxygen blocking properties in the barrier layer formed on one surface of the light control pattern, and the film has excellent durability under high temperature and high humidity conditions, preventing defects such as film degradation and cracking due to external factors. Therefore, the present invention, which provides a display panel according to one embodiment, has high industrial applicability.

Claims

1. A light-emitting element that outputs source light and includes a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer, The optical structure layer is disposed on the light-emitting element, The aforementioned optical structure layer is A light control layer disposed on the light-emitting element and including at least one light control pattern, A low-refractive-index layer is disposed on the aforementioned optical control layer, Displaced between the light control layer and the low refractive index layer, the barrier layer includes silicon oxynitride (SiON), The aforementioned barrier layer is A first layer is located adjacent to the low refractive index layer and has a nitrogen content of less than 1 at%, A second layer is positioned separated from the low-refractive index layer, with the first layer in between, and has a nitrogen content of 3 at% or more and 30 at% or less. A display panel comprising: a third layer having a nitrogen content of less than 3.2 at%, which is positioned apart from the low refractive index layer with the first and second layers in between.

2. The display panel according to claim 1, wherein the refractive index of the third layer is 1.3 or more and 1.5 or less for light in the wavelength range of 400 nm to 700 nm.

3. The first layer is placed directly on the low refractive index layer, The second layer is placed directly on the first layer, The display panel according to claim 1, wherein the third layer is directly arranged on the second layer.

4. The display panel according to claim 1, wherein the thickness of the first layer is 500 Å or more.

5. The aforementioned optical structure layer is The display panel according to claim 1, further comprising a color filter layer containing a plurality of color filters, separated from the light control layer with the low refractive index layer in between.

6. The aforementioned light control pattern includes a first light control pattern that converts the source light into first light, and a second light control pattern that transmits the source light. The display panel according to claim 1, wherein the first light control pattern includes a first quantum dot that converts the source light into the first light.

7. The optical control layer further includes banks positioned between the optical control patterns, The display panel according to claim 1, wherein the barrier layer is directly disposed on one surface of the light control pattern and the bank.

8. The display panel according to claim 1, wherein the low refractive index layer comprises a base resin and a plurality of hollow particles dispersed in the base resin.

9. The display panel according to claim 1, wherein the low refractive index layer has a refractive index of 1.3 or less for light in the wavelength range of 400 nm to 700 nm.

10. The aforementioned second layer is, A second-first layer is arranged adjacent to the first layer, The display panel according to claim 1, further comprising a second-second layer disposed between the second-first layer and the third layer, having a nitrogen content different from that of the second-first layer.

11. The aforementioned optical structure layer is The optical control layer is further separated from the barrier layer by an additional barrier layer, The display panel according to claim 1, wherein the additional barrier layer is directly disposed on one side of the light control pattern.

12. The display panel according to claim 1, further comprising a filling layer disposed between the light-emitting element and the optical structure layer and covering the light-emitting element.

13. The first layer has a refractive index of 1.3 or more and 1.5 or less for light in the wavelength range of 400 nm to 700 nm. The display panel according to claim 1, wherein the second layer has a refractive index of 1.4 or more and 1.8 or less for light in the wavelength range of 400 nm to 700 nm.

14. The display panel according to claim 1, wherein the third layer is in contact with one surface of the light control pattern.

15. The light-emitting element is positioned between the first electrode and the second electrode, and each includes a plurality of light-emitting stacks, each containing the light-emitting layer. The aforementioned multiple light-emitting stacks are A first light-emitting stack, which includes a first light-emitting layer, is placed on the first electrode described above, A charge generation layer is placed on the first light-emitting stack, A second light-emitting stack, which includes a second light-emitting layer, is disposed on the charge generation layer, The display panel according to claim 1, wherein the first light-emitting layer emits light of a different color from that of the second light-emitting layer.

16. A light-emitting element that outputs source light and includes a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer, The optical structure layer is disposed on the light-emitting element, The aforementioned optical structure layer is A light control layer disposed on the light-emitting element and including at least one light control pattern, A low-refractive-index layer is disposed on the aforementioned optical control layer, The light control layer and the low refractive index layer are disposed between them, The barrier layer is arranged sequentially from the low refractive index layer, and each layer includes a first layer, a second layer, and a third layer, each containing silicon oxynitride (SiON). The nitrogen content of the second layer is 3 times or more and 60 times or less the nitrogen content of the first layer. A display panel in which the nitrogen content of the third layer is less than 3.2 at%.

17. The first layer is placed directly below the low refractive index layer, The second layer is placed directly below the first layer, The display panel according to claim 16, wherein the third layer is directly disposed below the second layer.

18. A light-emitting element that outputs source light and includes a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer, The optical structure layer is disposed on the light-emitting element, The aforementioned optical structure layer is A light control layer disposed on the light-emitting element and including at least one light control pattern, A low-refractive-index layer is disposed on the aforementioned optical control layer, Displaced between the light control layer and the low refractive index layer, the barrier layer includes silicon oxynitride (SiON), The aforementioned barrier layer is A first layer, which is directly placed beneath the low refractive index layer and has a nitrogen content of less than 1 at%, A second layer is placed directly below the first layer and has a nitrogen content of 3 at% or more and 30 at% or less. A third layer is placed directly below the aforementioned second layer, The aforementioned optical control layer is a display panel directly positioned below the third layer.

19. The first layer has a refractive index of 1.3 or more and 1.5 or less for light in the wavelength range of 400 nm to 700 nm. The second layer has a refractive index of 1.4 or more and 1.8 or less for light in the wavelength range of 400 nm to 700 nm. The display panel according to claim 18, wherein the third layer has a refractive index of 1.3 or more and 1.5 or less for light in the wavelength range of 400 nm to 700 nm.

20. The thickness of the first layer is 500 Å or more. The thickness of the second layer is 600 Å or more. The display panel according to claim 18, wherein the thickness of the third layer is 500 Å or more.

Images