CCP gas supply nozzle

Abstract

Exemplary structures, methods, and systems are disclosed. One exemplary structure includes an integrated gas distribution nozzle assembly comprising an upper electrode section and a lower electrode section joined by a plurality of joint structures, and one or more gas region separation walls positioned between the upper electrode section and the lower electrode section. The integrated gas distribution nozzle assembly is made of a single material. Each of the plurality of joint structures is positioned between the upper electrode section and the lower electrode section. Each of the plurality of joint structures is configured to conduct high-frequency (RF) energy and thermal energy between the upper electrode section and the lower electrode section. One or more gas region separation walls are configured to separate the region between the upper electrode section and the lower electrode section into two or more plenum chambers.

Description

Background

[0001] This specification relates to semiconductor systems, processes, and devices. Plasma etching is used in the manufacture of integrated circuits in semiconductor processes. The integrated circuit is formed from a plurality (e.g., two or more) of layer structures. Different chemical compositions of etching gases (e.g., different gas mixtures) can be used to form plasma in the processing environment, thereby improving the accuracy and selectivity for the layer structure to be etched in the chemical composition of a specific etching gas. As the miniaturization of integrated circuits progresses and the fine structure and aspect ratio increase, the need for precise etching of layer structures is increasing. Overview

[0002] The plasma processing system includes a gas supply nozzle that supplies an etching gas mixture into the plasma processing chamber. This etching gas mixture is ignited by a plasma source to generate plasma. The charged particles of the plasma are attracted towards the exposed surface of the substrate held in the processing region within the chamber, and an etching process is performed on the exposed surface of the substrate.

[0003] Plasma is generated using a specific plasma source. One of the plasma sources is a capacitively coupled plasma (CCP) source. The CCP plasma source supplies high-frequency energy to the electrode at the upper part of the plasma chamber. This electrode functions as the first parallel plate of a capacitor. This electrode can include a gas supply nozzle.

[0004] Gas supply nozzles (also called showerheads) are typically manufactured by assembling multiple components. Specifically, a gas supply nozzle for a typical CCP source may include three independent structures that are press-fitted and configured to provide thermal conductivity. The three independent structures include an upper electrode plate, a lower electrode plate, and several pins connecting these two plates. The gas supply nozzle may include separate areas for receiving etching gas. The gas supply nozzle may include upper and lower gas partition O-rings to separate these areas. These O-rings may be made of different materials than the electrode plates and connecting pins. The upper and lower gas partition O-rings can be installed between the two plates and do not have thermal contact with the two plates. A material mismatch between pins made of the same material and O-rings made of different materials can lead to thermal non-uniformity in heat conduction between parts of the gas supply nozzle.

[0005] This specification describes techniques relating to gas supply nozzles and adjacent assemblies used in plasma processing systems. Generally, these techniques involve designing and manufacturing gas supply nozzles (also referred to as showerheads) for use in plasma processing systems using lamination manufacturing techniques. In particular, a one-piece gas supply nozzle is provided in which an upper electrode plate, a lower electrode plate, a joint structure, and one or more gas isolation walls are integrated into a single component using lamination manufacturing. In particular, by manufacturing one or more gas isolation walls as part of the gas supply nozzle structure, the need for gas sealing O-rings is eliminated. Furthermore, this specification describes integrating a gas supply nozzle with one or more additional components of a plasma processing system, including a cooling plate and a gas block, using lamination manufacturing.

[0006] Certain aspects of the subject matter described herein can be implemented as structures embodied in a machine-readable medium used in the design process. These structures include an integrated gas distribution nozzle assembly comprising an upper electrode section, a lower electrode section, a plurality of joining structures connecting the lower electrode section and the upper electrode section, and one or more gas region separation walls. The upper electrode section, the lower electrode section, the plurality of joining structures, and the one or more gas region separation walls are made of the same material. Each of the plurality of joining structures is positioned between the upper electrode section and the lower electrode section and coupled to them. Each of the plurality of joining structures is configured to conduct high-frequency energy and thermal energy between the upper electrode section and the lower electrode section. One or more gas region separation walls are positioned between the upper electrode section and the lower electrode section and coupled to them. One or more gas region separation walls are configured to separate the region between the upper electrode section and the lower electrode section into two or more plenum chambers.

[0007] The structure may include one or more of the following features:

[0008] In some embodiments, the structure resides on a storage medium as a data format used for exchanging layout data.

[0009] In some embodiments, the structure includes at least one of test data files, characteristic data, verification data, or design specifications.

[0010] In some embodiments, one or more gas region separation walls are annular walls that separate at least an inner plenum chamber from an outer plenum chamber within the region between the upper electrode section and the lower electrode section.

[0011] In some embodiments, the integrated gas distribution nozzle assembly further includes a cooling unit positioned above the upper electrode unit and coupled to the upper electrode unit, the cooling unit being configured to provide cooling to the upper electrode unit.

[0012] In some embodiments, the integrated gas distribution nozzle assembly further includes a recessed sensor for measuring the flow rate of the cooling fluid circulating in the cooling section. The cooling fluid circulates from the chiller to the cooling section, cooling the upper electrode section.

[0013] In some embodiments, the integrated gas distribution nozzle assembly further includes a high-frequency block positioned above the cooling section and coupled to the cooling section. The high-frequency block couples RF energy to the gas in two or more plenum chambers.

[0014] In some embodiments, the integrated gas distribution nozzle assembly further includes one or more sensors embedded in one or more of a plurality of joint structures.

[0015] Certain embodiments of the subject matter described herein can be implemented as a plasma processing system. The plasma processing system includes an integrated gas distribution nozzle assembly comprising an upper electrode section, a lower electrode section, a plurality of bonding structures joining the lower electrode section and the upper electrode section, and one or more gas region separation walls. The upper electrode section, the lower electrode section, the plurality of bonding structures, and one or more gas region separation walls are made of the same material. Each of the plurality of bonding structures is positioned between the upper electrode section and the lower electrode section and coupled to them. Each of the plurality of bonding structures is configured to conduct high-frequency energy and thermal energy between the upper electrode section and the lower electrode section. One or more gas region separation walls are positioned between the upper electrode section and the lower electrode section and coupled to them. One or more gas region separation walls are configured to separate the region between the upper electrode section and the lower electrode section into two or more plenum chambers.

[0016] The structure may contain one or more of the following features:

[0017] In some embodiments, the integrated gas distribution nozzle assembly further includes a cooling unit positioned above the upper electrode unit and coupled to the upper electrode unit, the cooling unit being configured to provide cooling to the upper electrode unit.

[0018] In some embodiments, the integrated gas distribution nozzle assembly further includes a recessed sensor for measuring the flow rate of the cooling fluid circulating in the cooling section. The cooling fluid circulates from the chiller to the cooling section to cool the upper electrode section.

[0019] In some embodiments, the integrated gas distribution nozzle assembly further includes one or more sensors embedded in one or more of a plurality of joint structures.

[0020] Certain aspects of the subject matter described herein can be implemented as methods. This method involves laminating a one-piece gas distribution nozzle assembly. Laminating the one-piece gas distribution nozzle assembly involves forming a plurality of layers including a lower electrode section. A plurality of layers are formed including a plurality of bonding structures coupled to the lower electrode section. A plurality of layers are formed including one or more gas region separation walls coupled to the lower electrode section. A plurality of layers are formed including an upper electrode section coupled to the plurality of bonding structures and one or more gas region separation walls. The upper electrode section, the lower electrode section, the plurality of bonding structures, and one or more gas region separation walls are made of the same material. Each of the plurality of bonding structures is positioned between the upper electrode section and the lower electrode section and coupled to them. Each of the plurality of bonding structures is configured to conduct high-frequency energy and thermal energy between the upper electrode section and the lower electrode section. One or more gas region separation walls are positioned between the upper electrode section and the lower electrode section and coupled to them. One or more gas region separation walls are configured to separate the region between the upper electrode section and the lower electrode section into two or more plenum chambers.

[0021] The method may include one or more of the following features:

[0022] In some embodiments, the lamination of the integrated gas distribution nozzle assembly further includes forming multiple layers, each including a cooling section positioned above and coupled to the upper electrode section. The cooling section is configured to provide cooling to the upper electrode section.

[0023] In some embodiments, the integrated gas distribution nozzle assembly further includes a recessed sensor for measuring the flow rate of the cooling fluid circulating in the cooling section. The cooling fluid circulates from the chiller to the cooling section to provide cooling to the upper electrode section.

[0024] In some embodiments, the integrated gas distribution nozzle assembly further includes one or more sensors embedded in one or more of a plurality of joint structures.

[0025] The subject matter described herein can be implemented in these embodiments and other embodiments, and one or more of the following advantages can be achieved: A laminated gas supply nozzle can maintain the function and performance of a gas supply nozzle having individually manufactured parts. A laminated gas supply nozzle can also improve thermal conductivity by eliminating gas partition O-rings made of a different material from the rest of the gas supply nozzle. The upper and lower gas partition O-rings of a gas supply nozzle having individually manufactured parts can be replaced with gas separation walls made of the same material as the rest of the laminated gas supply nozzle, for example, an aluminum alloy or other conductive material. This can reduce thermal non-uniformity associated with the upper and lower gas partition O-rings. Forming the gas supply nozzle by laminate manufacturing can reduce alignment problems during assembly. Furthermore, a laminated gas supply nozzle can eliminate the need for electron beam inspection and leak checks, reduce costs associated with machining waste, accommodate complex shapes, and shorten turnaround time and manufacturing processes. Furthermore, by using an additive manufacturing method, the entire source-gas supply nozzle assembly, integrating the gas supply nozzle, chill plate, and optionally the RF block, can be manufactured. This simplifies assembly, reduces alignment issues, and eliminates the need for various gas seals, such as O-rings, to supply etching gas to the gas supply nozzle.

[0026] In the following disclosure, specific structures fabricated using the disclosed technology are identified, but it will be readily understood that these structures are equally applicable to a variety of other structures such as those found in the described source showerhead electrode assemblies. Accordingly, the technology should not be construed as limited to only the structures described. In this disclosure, before describing structures according to some embodiments of the technology, one possible structure that can be used in the technology is described. The technology is not limited to the structures described, and it should be understood that the described structures can be used in any number of source showerhead electrode assemblies.

Brief Description of the Drawings

[0027] [Figure 1] An example of a schematic cross-sectional view of a plasma chamber is shown. [Figure 2] A cross-sectional view of an exemplary source gas supply nozzle assembly for a capacitively coupled plasma source is shown. [Figure 3] A cross-sectional view of an example of a gas supply nozzle is shown. [Figure 4] A top view of an example of a gas supply nozzle without an upper electrode plate is shown. [Figure 5] A top view of another example of a gas supply nozzle without an upper electrode plate is shown. [Figure 6A] A view showing an example of the cross-sectional shape of a joint structure in a gas supply nozzle. [Figure 6B] The cross-sectional shape of FIG. 6A is shown as an example of the structure of a gas supply nozzle used for a joint structure connecting an upper electrode plate and a lower electrode plate. [Figure 7] A cross-sectional view of an example of a source gas supply nozzle assembly fabricated with a chiller is shown. [Figure 8] A flowchart of an exemplary process for manufacturing an integrated gas distribution nozzle assembly is shown. [Figure 9] A schematic diagram of an exemplary computing system that can be used to execute embodiments of this disclosure.

[0028] Similar reference numbers and designations in various drawings refer to the same elements. Detailed explanation

[0029] This specification relates to the structure, method, and system of laminated manufacturing components for source gas supply nozzle assemblies for capacitively coupled plasma sources. Laminated gas supply nozzles can retain the functionality and performance of gas supply nozzles with individually manufactured components. Furthermore, laminated gas supply nozzles can provide superior thermal conductivity compared to gas supply nozzles with individually manufactured components. The upper and lower gas partition O-rings of gas supply nozzles with individually manufactured parts are replaced with gas separation walls made of the same material as the rest of the laminated gas supply nozzle, thus reducing thermal non-uniformity associated with the upper and lower gas partition O-rings. In addition, laminated gas supply nozzles can eliminate electron beam and leak checks, reduce costs associated with machining waste, accommodate complex shapes, and shorten turnaround time and manufacturing steps.

[0030] Figure 1 shows an example of a schematic cross-sectional view of a plasma processing chamber suitable for etching one or more material layers placed on a substrate 103 (also referred to as a “wafer”) within a processing chamber 100 (e.g., a plasma processing chamber). The processing chamber 100 includes a chamber body 105 that defines a chamber volume 101 in which the substrate can be processed. The chamber body 105 has side walls 112 and a bottom 118 connected to ground 126. The side walls 112 may include a liner 115 to protect the side walls 112 and extend the maintenance cycle interval of the plasma processing chamber 100. The chamber body 105 supports a chamber lid assembly 110 that encloses the chamber volume 101. The chamber body 105 can be manufactured from, for example, aluminum or other suitable material. A substrate access port 113 is formed through the side wall 112 of the chamber body 105, thereby facilitating the insertion and removal of the substrate 103 into and from the plasma processing chamber 100. The access port 113 can be connected to the transport chamber and / or other chambers (not shown) of the substrate processing system, for example, to perform other processing on the substrate. A pumping port 145 is formed through the bottom 118 of the chamber body 105 and connected to the chamber volume 101. A pumping device is connected to the chamber volume 101 via the pumping port 145 to perform vacuuming and pressure control within the processing volume. The pumping device may include one or more pumps and throttle valves.

[0031] The chamber volume 101 includes a processing area 107 (e.g., a station for processing a substrate). A substrate support 135 can be placed in the processing area 107 of the chamber volume 101 to support the substrate 103 during processing. The substrate support 135 may include an electrostatic chuck 122 for holding the substrate 103 during processing. The electrostatic chuck ("ESC") 122 can hold the substrate 103 to the substrate support 135 using electrostatic attraction. The ESC 122 can be powered by a high-frequency (RF) power supply 125 integrated with a matching circuit 124. The ESC 122 may include an electrode 121 embedded in a dielectric. The electrode 121 can be connected to the RF power supply 125 and can provide a bias to attract plasma ions generated from the processing gas in the chamber volume 101 to the ESC 122 and the substrate 103 placed on the pedestal. The RF power supply 125 can be driven on / off, i.e., pulsed, during processing of the substrate 103. The ESC122 may have an isolator 128 to make the sidewalls of the ESC122 less likely to be attracted to the plasma, thereby extending the maintenance life of the ESC122. Furthermore, the substrate support 135 may have a cathode dryer 136 to protect the sidewalls of the substrate support 135 from the plasma gas, thereby extending the maintenance interval of the plasma processing chamber 100.

[0032] Electrode 121 can be connected to a DC power supply 150. The power supply 150 can supply a chucking voltage of approximately 200 volts to approximately 2000 volts to electrode 121. The power supply 150 also includes a system controller that can control the operation of electrode 121 by supplying DC current to electrode 121 to chucking and dechucking the substrate 103. ESC 122 may include a heater connected to the power supply for heating the substrate. Meanwhile, the cooling base 129 supporting ESC 122 may include conduits for circulating thermal conductive fluid to maintain the temperature of ESC 122 and the substrate 103 placed on top of it. ESC 122 can be configured to operate within a temperature range required by the thermal budget of the device being manufactured on the substrate 103. For example, ESC 122 can be configured to maintain the substrate 103 at a temperature from approximately -150°C or below to approximately 500°C or above, depending on the process being performed. Covering 130 can be placed on ESC 122 and around the substrate support 135. The covering 130 can be configured to confine etching gas to a desired portion of the exposed upper surface of the substrate 103, while also shielding the upper surface of the substrate support 135 from the plasma environment within the plasma processing chamber 100.

[0033] A gas panel 160 (for example, also referred to herein as a “gas distribution manifold”) can be connected to the chamber body 105 via a chamber lid assembly 110 through a gas line 167 to supply a process gas into the chamber volume 101. The gas panel 160 may include one or more process gas sources 161, 162, 163, 164 and may further include any number of inert gases, non-reactive gases, and reactive gases that can be used in any suitable process. Examples of process gases that can be supplied by the gas panel 160 include, but are not limited to, hydrocarbon-containing gases including methane, sulfur hexafluoride, silicon chloride, silicon tetrachloride, carbon tetrafluoride, hydrogen bromide, etc. Process gases that can be supplied by the gas panel include, but are not limited to, argon gas, chlorine gas, nitrogen, helium, oxygen gas, sulfur dioxide, and any number of additional substances. Furthermore, the process gas may include nitrogen, chlorine, fluorine, oxygen, or hydrogen-containing gases (e.g., BCl3, C2F4, C4F8, C4F6, CHF3, CH2F2, CH3F, NF3, NH3, CO2, SO2, CO, N2, NO2, N2O, H2, etc.) as well as any number of suitable precursors. One or more etching gas mixtures can be formed by combining process gases from process gas sources (e.g., sources 161, 162, 163, 164). For example, gas panel 160 includes one or more process gas sources specific to oxide-based etching chemical reactions. In another example, gas panel 160 includes one or more process gas sources specific to nitride-based etching chemical reactions.

[0034] The gas panel 160 includes various valves, pressure regulators (not shown), and mass flow controllers (not shown) positioned relative to gas sources 161, 162, 163, and 164 to control the flow rate of process gas from the gas sources. Valve 166 can control the flow rate of process gas from gas sources 161, 162, 163, and 164 of the gas panel 160. The operation of the valves, pressure regulators, and / or mass flow controllers can be controlled by controller 165. Controller 165 is operably connected to an electric valve (EV) manifold (not shown) and can control the operation of one or more of the valves, pressure regulators, and / or mass flow controllers.

[0035] The gas supply assembly 175 is coupled to the lid 110. The gas supply assembly 175 includes a gas supply nozzle 114 and a chill plate 173. The chill plate 173 provides heat conduction from the gas supply nozzle 114, which is exposed to the heat of the plasma processing chamber 100. The chill plate 173 includes, for example, a path for passing the processing gas from the gas line 167 to the gas supply nozzle 114. The gas supply nozzle 114 may include one or more openings for introducing the processing gas from the supply sources 161, 162, 163, 164 of the gas panel 160 into the chamber volume 101.

[0036] After the processing gas is introduced into the plasma processing chamber 100, energy can be supplied to the gas to form a plasma. Various energy sources can be used to couple energy (e.g., RF energy) to the processing gas in order to form and maintain the plasma within the chamber volume 101 of the plasma processing chamber 100. Examples of energy sources include capacitively coupled plasma (CCP) sources and inductively coupled plasma (ICP) sources. A CCP source includes an electrode block 148 adjacent to the plasma processing chamber 100. Furthermore, the electrodes can be coupled to a gas supply nozzle 114, for example, via a chill plate 173. When charged, the gas supply nozzle 114 forms a first parallel plate of a capacitor having a second electrode (e.g., electrode 121 in ESC 122). A power supply 142 can supply power to the electrode block 148 and the gas supply nozzle 114 via a matching circuit 141, allowing energy to be capacitively coupled to the processing gas. The operation of the power supply 142 can be controlled by a controller such as a controller 165, which also controls the operation of other components in the plasma processing chamber 100.

[0037] The controller 165 can be used to control the process sequence, adjust the gas flow rate from the gas panel 160 to the plasma processing chamber 100, and control other process parameters. When the software routines are executed by a computing device having one or more processors (e.g., a central processing unit (CPU)) capable of data communication with one or more memory storage devices, the computing device can be transformed into an application-specific computer (e.g., a controller) and controlled to perform the process in accordance with this disclosure. The software routines can also be stored and / or executed by one or more other controllers that can be associated with the plasma processing chamber 100.

[0038] In some embodiments, at the end of the wafer etching process, an automated or semi-automated robotic manipulator (not shown) can be used to transport the wafer from the substrate support out of the process chamber (e.g., via the substrate access port 113). For example, the robotic manipulator can transport the wafer to another chamber (or another location) to perform other steps of the manufacturing process.

[0039] In Figure 1, the process chamber is described as including one substrate support placed within a processing area in the chamber volume, but two or more substrate supports can also be placed in each processing area (e.g., within each processing station) within the same chamber volume. For example, the processing chamber 100 may be a tandem processing chamber including two processing areas, each equipped with a substrate support configured to hold each wafer during the etching process. The processing chamber 100 can include two or more processing areas within the chamber volume 101, thereby facilitating parallel processing of two or more substrates within each processing area. These processing areas can be substantially separated such that the etching process in the first processing area has minimal impact on the etching process in the second processing area, and vice versa.

[0040] Figure 2 shows a cross-sectional view of an example of a source-gas supply nozzle assembly 200 for a capacitively coupled plasma source. In some embodiments, the RF block 204 may be an embodiment of the RF block 148 in Figure 1. The source-gas supply nozzle assembly 200 also includes a chill plate 202, a gas supply nozzle 208, an insulating ring 212, a gas distribution plate 210, and a chiller 214 coupled to the chill plate 202. The chiller 214 is used to circulate a cooling fluid through the chill plate 202 to achieve a predetermined temperature. The gas supply nozzle 208 may be an embodiment of the gas supply nozzle 114 in Figure 1. The gas supply nozzle 208 includes an upper and lower section that at least partially encloses one or more plenums, as will be described in more detail below with respect to Figure 3. The gas supply nozzle 208 can be manufactured as a single structure, for example, using additive manufacturing techniques. The insulating ring 212 can seal a portion of the plenum of the gas supply nozzle at its end and provide an insulating barrier between the charged gas supply nozzle 208 and the chamber lid (e.g., the chamber lid assembly 110 in Figure 1).

[0041] The chill plate 202 is used as a heat exchanger to cool the gas supply nozzle and the input etching gas, counteracting the heat generated by the plasma in the processing chamber. A gas distribution plate (GDP) 210 can be coupled to the gas supply nozzle 208. For example, the gas distribution plate 210 may have an opening that matches the gas output hole of the gas supply nozzle 208. The gas distribution plate 210 may be formed from a material that protects the gas supply nozzle 208 from the plasma in the processing chamber. In some embodiments, the gas distribution plate 210 is formed from ceramic, yttria, silicon carbide, silicon, or equivalent material. When the RF block 204 is powered by a power source (e.g., power source 142 in Figure 1), energy is conducted to the gas supply nozzle 208, causing it to charge. The energy is conducted through a conductive cooling plate or through one or more electrode structures that pass through the cooling plate to the gas supply nozzle.

[0042] Figure 3 shows a cross-sectional view of an exemplary gas supply nozzle 300. The gas supply nozzle 300 may be an embodiment of the gas supply nozzle 208 in Figure 2. The gas supply nozzle 300 includes an upper electrode plate 302 and a lower electrode plate 308 joined at multiple points by a joint structure 304. In some embodiments, the joint structure 304 can conduct both thermal energy and RF energy between the upper electrode plate 302 and the lower electrode plate 308. The total number of joint structures 304 can be determined so as to achieve a balance between thermal energy conduction and RF energy conduction. In one example, the total number of joint structures 304 is 79. Examples of materials for the upper electrode plate 302, the lower electrode plate 308, and the joint structure 304 are suitable aluminum alloys (e.g., aluminum 6061-T6, etc.). The joint structure 304 is formed together with the upper electrode plate 302 and the lower electrode plate 308, for example, by lamination manufacturing. Thus, the joint structure 304 is not a separate part but is part of the integrated gas supply nozzle body. In some embodiments, the shapes of the joint structure 304 include cylindrical, angled, trapezoidal, hourglass, or rectangular peg shapes, each having its own strength characteristics. Figure 6A shows examples 602-616 of the cross-sectional shapes of the joint structure 304. Figure 6B shows an example of a gas supply nozzle 300 structure using the cross-sectional shape 612 of Figure 6A for the joint structure 620 connecting the upper electrode plate 618 and the lower electrode plate 622.

[0043] In some embodiments, one or more plenum chambers can be formed between the upper electrode plate 302 and the lower electrode plate 308. Specifically, as shown in Figure 3, the gas supply nozzle 300 includes a first plenum chamber 312 and a second plenum chamber 314. The two plenum chambers can be formed using a gas separation wall 306. The gas separation wall 306 provides a gas seal between the first plenum chamber 312 and the second plenum chamber 314. In some embodiments, the gas separation wall 306 can be an annular wall. By manufacturing the joint structure 304 and the gas separation wall 306 from the same material as the upper electrode plate 302 and the lower electrode plate 308, both the joint structure 304 and the gas separation wall provide uniform heat conduction (e.g., from the lower electrode plate 308 to the upper electrode plate 302).

[0044] In some embodiments, additional isolation walls can be used to form three or more plenum chambers (e.g., three plenum chambers (e.g., inner, middle, and outer plenum chambers), or four plenum chambers). The additional plenum chambers improve gas flow control and process uniformity, allowing for a desired etching rate across the entire wafer. For example, in low-node device applications, additional knobs may be needed for more precise control and performance tuning. Figure 5 shows an example of a gas supply nozzle with three plenum chambers 504, 506, and 508 formed using two gas isolation walls 510 and 512.

[0045] The lower electrode plate 308 includes a plurality of gas output holes 310 for discharging gas from the gas supply nozzle 300, for example, into the processing chamber. The upper electrode plate 302 includes two or more gas paths for introducing etching gas into the first plenum chamber 312 and the second plenum chamber 314. Each plenum chamber uniformly distributes the introduced etching gas within the plenum, thereby allowing the etching gas to flow out at a uniform rate from the output gas holes connected to the plenum. In this way, the plenum chambers facilitate the uniform distribution of etching gas to specific areas of the processing chamber.

[0046] In some embodiments, in designs with multiple plenum chambers (e.g., four or more plenum chambers), gas lines can be connected to these plenum chambers individually, and a flow ratio controller (FRC) can be used to proportionally distribute and supply gas flow rates to the plenum chambers at the required ratio based on the needs of the process application. Each plenum gas supply may also have an RF gas break to isolate the RF electrode to ground.

[0047] Figure 4 shows a top view 400 of an exemplary gas supply nozzle 300 without the upper electrode plate 302. In particular, Figure 4 shows the lower electrode plate 308, gas separation wall 306, bonding structure 304, and gas output hole 310. The gas separation wall 306 is a circular ring separating the first plenum chamber 312 and the second plenum chamber 314. The bonding structure 304 is distributed in both the first plenum chamber 312 and the second plenum chamber 314. In some embodiments, the gas separation wall 306 may have other shapes depending on the shape of the wafer and the number of plenum chambers.

[0048] The upper electrode plate 302 and the lower electrode plate 308 form a barrier between the first plenum chamber 312 and the second plenum chamber 314 in the gas separation wall 306. For example, the first gas line can supply etching gas to the first plenum chamber 312 through the first opening of the upper electrode plate 302. The second gas line can supply etching gas to the second plenum chamber 314 through the second opening of the upper electrode plate 302. The etching gas and gas pressure can be controlled independently for each gas line. As a result, the pressure and composition of the etching gas in each plenum chamber can be controlled independently. This independent control allows for more precise control of the etching process.

[0049] For example, the first plenum chamber 312 may include gas output holes 310 that guide etching gas to a portion of the chamber. This guides charged particles to the central region of the substrate when the etching gas is ionized in the plasma. Similarly, the second plenum chamber 314 may include gas output holes 310 that guide etching gas to a portion of the chamber. This guides charged particles to the edge region of the substrate when the etching gas is ionized in the plasma. The etching rate may differ between the central and edge regions of the substrate. By supplying etching gas independently from separate plenum chambers, the etching rate can be controlled, and uniform etching can be achieved across the entire substrate.

[0050] Figures 3-4 show an example of a gas supply nozzle with two plenum chambers, but other modifications are possible. For example, two gas separation walls can be formed to create three plenum chambers (e.g., an inner plenum chamber, an intermediate plenum chamber, and an edge plenum chamber). Etching gas is supplied independently to each of these three plenum chambers and then to the processing chamber. Figure 5 shows a plan view 500 of another gas supply nozzle without an upper electrode plate. In particular, Figure 5 shows three plenum chambers 504, 506, and 508 formed using a lower electrode plate 502 and two gas separation walls 510 and 512.

[0051] Furthermore, as shown in Figure 3, the outer gas seal of the second plenum chamber 314 is provided by a component separate from the gas supply nozzle 300 (e.g., the insulating ring 212 shown in Figure 2). However, in other embodiments, a separate gas separation wall can be formed as part of the gas supply nozzle 300 to define the boundary of the second plenum chamber 314. In some embodiments, one or more sensors can be optionally embedded in the bonding structure (e.g., a pin). These sensor-equipped bonding structures can be added during the additive manufacturing process for producing the gas supply nozzle, for example, by directly 3D printing the sensors. Examples of sensors include thermocouples for measuring the temperature at multiple locations on a showerhead. The advantages of 3D printing sensor-equipped bonding structures include closed-loop temperature monitoring and heat exchange, improved thermal profile of the showerhead, and avoidance of high / low temperature spots and by-product adhesion. Figure 3 shows an example of a sensor 316 embedded within a bonding structure 304.

[0052] As described above, the gas supply nozzle 300 can be manufactured using additive manufacturing technology. This allows the gas supply nozzle 300 to be formed as a single structure, eliminating the need for alignment pins to join the upper and lower electrodes, and O-rings for gas seals that can cause non-uniform heat conduction. When used in a CCP system, the gas supply nozzle 300 is manufactured from a conductive material (e.g., an aluminum alloy such as aluminum 6061-T6). Other materials, such as powdered aluminum alloys for 3D printing (e.g., AlSi10Mg, Al6161 RAM2), or metal matrix materials can also be used. High-strength metals with excellent thermal conductivity, electrical conductivity, and corrosion resistance can also be used. In some embodiments, for example, the entire structure, including the gas flow path and output gas holes, is formed using additive manufacturing. In other embodiments, subsequent manufacturing processes are added to additive manufacturing. For example, the lower electrode plate can be manufactured by additive manufacturing of a solid surface, and then the output gas holes can be processed by laser drilling or the like.

[0053] In some embodiments, erosion and metal contamination due to plasma exposure can be minimized by joining a gas distribution plate made of ceramic material using 3D printed electrodes. Examples of GDP materials include silicon, bulk yttria, silicon carbide, or equivalent materials. In some embodiments, GDP can also be 3D printed directly onto the aforementioned metal electrode assembly to form a single component as a showerhead.

[0054] In some embodiments, a computer-aided design (CAD) model of the gas supply nozzle is first created, and then a slicing algorithm maps the information of each layer. The layers begin with the distribution of powder spread across the surface of the powder bed. Next, a selected binder material selectively binds the particles that will form the gas supply nozzle. Then, a piston supporting the powder bed and the part being processed descends, forming the next powder layer. The same process is repeated after each layer, and finally, heat treatment is applied to form the gas supply nozzle. Because 3D printing allows for localized control of material composition, microstructure, and surface texture, this method enables the realization of a variety of shapes that were previously impossible.

[0055] In some embodiments, the gas supply nozzle described herein can be represented in a data structure readable by a computer rendering device or computer display device. Figure 9 is a schematic diagram of an exemplary computing system 900 that can be used to carry out embodiments of the present disclosure. In some embodiments, memory 920 is a computer-readable medium that can contain a data structure representing the gas supply nozzle. The data structure is a computer file and can contain information about the structure, material, texture, physical properties, or other properties of one or more articles. The data structure can also contain code, such as computer executable code or device control code, that performs selected functions of the computer rendering device or computer display device. The data structure can be stored in a computer-readable medium. The computer-readable medium can include a physical storage medium such as magnetic memory, a floppy disk, or any available physical storage medium. The physical storage medium is readable by the exemplary computing system 900, and the gas supply nozzle represented by the data structure can be rendered on a computer screen or on a physical rendering device that can be an additive manufacturing device such as a 3D printer.

[0056] In some embodiments, lamination manufacturing of the gas supply nozzle can avoid variations in the manufacturing of individual components of the gas supply nozzle, as well as the machining waste, handling, and tool waste associated with the manufacturing of individual components of the gas supply nozzle. Furthermore, by using lamination manufacturing, it becomes possible to replace non-conductive O-rings with gas region separation walls that, unlike O-rings, can be formed from the same material as the rest of the gas supply nozzle, thereby improving the uniformity of heat conduction between the lower and upper electrode plates.

[0057] In some embodiments, the stacked manufacturing of gas supply nozzles eliminates assembly mismatches, press-fitting problems associated with individually manufactured gas supply nozzle parts, and the need for electron beam inspection and leak checks. Furthermore, it improves reproducibility and chamber matching between processing chambers or between processing areas in tandem processing chambers.

[0058] In some embodiments, the total number of joint structures in the multilayer manufacturing gas supply nozzle, and the shape and size of each individual joint structure, can be determined based on the application to improve the balance between heat conduction and RF energy conduction. Furthermore, 3D printing-based design helps reduce the thermal mass of the multilayer manufacturing gas supply nozzle. The joint structures may also have alternative profiles or structures to improve heat conduction and RF energy conduction performance. Additionally, by designing gas region separation walls, additional regions can be created to improve the uniformity of the gas flow or plasma.

[0059] In some embodiments, the additive manufacturing process can extend beyond the gas supply nozzle to include other components of the source gas supply nozzle assembly, such as the source gas supply nozzle assembly 200.

[0060] Figure 7 shows an example of a cross-sectional view of a laminated source gas supply nozzle assembly 700 and chiller. As shown in Figure 7, the gas supply nozzle 702, chill plate 704, and RF block 708 can be integrally formed by laminated manufacturing. A chiller 716 can be coupled to the source gas supply nozzle assembly 700. Despite being integrally formed, each component 702, 704, and 708 can have the same function as the gas supply nozzle 300, chill plate 202, and RF block 204 described above. Similarly, the chiller 716 can have the same function as the chiller 214 described above.

[0061] The chill plate 704 includes a plurality of cooling channels 710. The cooling channels 710 can be used to circulate a cooling fluid through the chill plate 704 to facilitate heat exchange. The cooling fluid can be supplied by a chiller 716 and coupled to the chill plate 704. The chill plate 704 may include a flow sensor 722 that is embedded during the manufacturing process, for example, in the laminated manufacturing process of a source gas supply nozzle assembly 700. The flow sensor 722 can be positioned on the vanes of the cooling fluid inlet on the chill plate 704 and can measure the flow rate of the cooling fluid circulating through the chill plate 704. An example of the flow sensor 722 may include an accelerometer. The flow sensor 722 can provide a control function to adjust the flow rate of the cooling fluid to the chill plate 704 and adjust the target temperature of the gas supply nozzle 702. The gas supply nozzle 702 may include a plurality of bonding structures 718 with embedded sensors 720. The embedded sensors 720 may have similar functions to the sensors 316 described above. An example of sensor 720 may include thermocouples for measuring the temperature at multiple points on the gas supply nozzle 702. The combination of flow sensor 722 and sensor 720 allows for closed-loop control of the temperature of the gas supply nozzle 702.

[0062] The laminated chill plate 704, gas supply nozzle 702, and RF block 708 can be fabricated from a single material such as an aluminum alloy (e.g., aluminum 6061-T6). The combination of the laminated chill plate 704 and gas supply nozzle 702 can improve the overall thermal conductivity of the single component, which is the combination of the chill plate and the showerhead electrode base. Furthermore, by manufacturing the gas supply nozzle 702, chill plate 704, and RF block 708 in a single laminated manufacturing process, alignment pins can be eliminated.

[0063] After manufacturing, the source gas supply nozzle assembly 700 can be expanded with additional components as part of the assembly process. For example, an insulator 712 can be added to ensure insulation between the conductive gas supply nozzle and other components in the processing chamber (e.g., the lid assembly). In another example, a gas distribution plate 714 can be attached to the lower electrode portion of the gas supply nozzle 702. As previously described with reference to Figure 2, the gas supply plate provides a layer of material that protects the gas supply nozzle from plasma in the plasma processing chamber. Similarly, connections for gas lines, power supplies, and sensors (not shown) can also be added.

[0064] In some embodiments, a computer-aided design (CAD) model is first created combining a gas supply nozzle, chill plate, and RF block, and then a slicing algorithm is used to map the information of each layer. The layers begin with a thin powder distribution spread across the surface of the powder bed. Next, a selected binder material selectively binds the particles where the combination of the gas supply nozzle, chill plate, and RF block is formed. Then, the piston supporting the powder bed and the part being processed is lowered, forming the next powder layer. After each layer is formed, the same process is repeated, and finally, heat treatment is performed to manufacture the combination of the gas supply nozzle, chill plate, and RF block. Because 3D printing allows for localized control of the material composition, microstructure, and surface texture, this method can be used to realize a variety of (previously inaccessible) shapes.

[0065] In some embodiments, the combination of gas supply nozzles, chill plates, and RF blocks described herein can be represented in a data structure readable by a computer rendering device or computer display device. Figure 9 is a schematic diagram of an exemplary computing system 900 that can be used to carry out embodiments of the present disclosure. In some embodiments, memory 920 is a computer-readable medium that can contain data structures representing the combination of gas supply nozzles, chill plates, and RF blocks. The data structures are computer files and can contain information about the structure, material, texture, physical properties, or other properties of one or more articles. The data structures can also contain code, such as computer executable code or device control code, that performs selected functions of a computer rendering device or computer display device. The data structures can be stored in a computer-readable medium. The computer-readable medium can include a physical storage medium such as magnetic memory, a floppy disk, or any available physical storage medium. The physical storage medium is readable by the exemplary computing system 900, and the combination of gas supply nozzles, chill plates, and RF blocks represented by the data structures can be rendered on a computer screen or on a physical rendering device that can be an additive manufacturing device such as a 3D printer.

[0066] In some embodiments, the lamination of the gas supply nozzle, chill plate, and RF block combination can avoid variations in the manufacturing of individual components of the gas supply nozzle, chill plate, and RF block, as well as the waste, handling, and tooling associated with the manufacturing of individual components, such as electron beam welding and machining. It can also eliminate assembly inconsistencies and press-fit problems, improving repeatability and chamber matching.

[0067] Figure 7 shows a structure combining a gas supply nozzle, chill plate, and RF block, but it is not necessary to form all three in a single lamination process. For example, it is possible to form a structure combining a gas supply nozzle and chill plate using a lamination method and then combine it with another RF block.

[0068] Figure 8 shows a flow diagram of an exemplary process 800 for manufacturing an integrated gas distribution nozzle assembly used, for example, in a plasma-based processing system. For convenience, process 800 is described in relation to an additive manufacturing system that performs at least some of the steps of the process.

[0069] The additive manufacturing system forms multiple layers, including a lower electrode section (802). The additive manufacturing system can receive a data structure representing the lower electrode section from a computer system and use that data structure to form multiple layers of the lower electrode section.

[0070] The multilayer manufacturing system forms a multilayer (804) which includes multiple bonding structures that are coupled to the lower electrode portion. During the formation of the multilayer, one or more sensors can be embedded in one or more bonding structures.

[0071] The multilayer fabrication system forms multiple layers, each containing one or more gas region separation walls coupled to the lower electrode section (806).

[0072] The multilayer fabrication system forms multiple layers, each including multiple bonding structures and upper electrode sections coupled to one or more gas region separation walls (808).

[0073] Additionally, the laminated manufacturing system forms a multilayer including a cooling section on the upper electrode plate (810). The formation of the cooling section multilayer includes the formation of one or more cooling channels configured to receive a cooling fluid. One or more sensors can be embedded during the formation of the multilayer.

[0074] The additive manufacturing system receives a data structure representing the upper electrode section from a computer system and can use this data structure to form a multilayer of the upper electrode section. The upper electrode section, lower electrode section, multiple bonding structures, and one or more gas region isolation walls are made of the same material. Each of the multiple bonding structures is positioned between the upper and lower electrode sections and coupled to them. Each of the multiple bonding structures is configured to conduct high-frequency energy and thermal energy between the upper and lower electrode sections. One or more gas region isolation walls are positioned between the upper and lower electrode sections and coupled to them. One or more gas region isolation walls are configured to separate the region between the upper and lower electrode sections into two or more plenum chambers.

[0075] The multilayer structure can be formed in different directions. For example, the multilayer structure can be formed in the reverse order, first forming the upper electrode section using a multilayer manufacturing system. Subsequently, multiple bonding structures and one or more gas region separation walls can be laminated on the upper electrode section.

[0076] Figure 9 shows a schematic diagram of an exemplary computing system 900. System 900 can be used for operations described in relation to embodiments described herein. For example, system 900 may be included in any or all of the computing systems described herein. System 900 includes a processor 910, memory 920, storage device 930, and input / output device 940. Components 910, 920, 930, and 940 are interconnected using a system bus 950. The processor 910 can process instructions executed within system 900. In some embodiments, the processor 910 is a single-threaded or multi-threaded processor. The processor 910 can process instructions stored in memory 920 or storage device 930 and display graphical information for a user interface on input / output device 940.

[0077] Memory 920 stores information within the system 900. In some embodiments, memory 920 is a computer-readable medium. Memory 920 is a volatile memory unit. Memory 920 is a non-volatile memory unit. Storage device 930 can provide large-capacity storage to the system 900. Storage device 930 is a computer-readable medium. Storage device 930 may be a floppy disk device, a hard disk device, an optical disk device, or a tape device. Input / output device 940 provides input / output operations to the system 900. Input / output device 940 includes a keyboard and / or a pointing device. Input / output device 940 includes a display unit for displaying a graphical user interface.

[0078] This specification includes details of many specific embodiments, but these should not be construed as limiting the scope of the claims and should be construed as descriptions of features specific to those embodiments. Certain features described herein in the context of individual embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented individually or in any subcombination in multiple embodiments. Furthermore, even if the aforementioned features are described as operating in a particular combination and were initially claimed as such, in some cases one or more features may be removed from the claimed combination, and the claimed combination may cover a subcombination or a variation of a subcombination.

[0079] In this disclosure, the terms “one,” “one,” or “it” are used to include one or more unless the context clearly indicates otherwise. The term “or” is used to mean non-exclusive “or” unless otherwise specified. The description “at least one of A and B” is synonymous with “A, B, or A and B.” Furthermore, any expressions or terms used in this disclosure that are not otherwise defined should be understood to be for illustrative purposes only and not limiting. The use of section headings is intended to improve the readability of the document and should not be interpreted as limiting. Information related to a section heading may be found within or outside that particular section.

[0080] As used in this disclosure, the terms “about” or “approximately” may allow for some variation in a value or range, such as within 10%, 5%, or 1% of the stated limit of the stated value or range.

[0081] As used in this disclosure, the term “substantially” means the majority or most, including at least about 50%, 60%, 70%, 80%, 90%, 95%, 96%, 97%, 98%, 99%, 99.5%, 99.9%, 99.99%, or at least about 99.999% or more.

[0082] Values ​​expressed in range format should be interpreted flexibly to include not only the numerical limits explicitly stated as range boundaries, but also all individual numerical values ​​or subranges within that range, as if each numerical value and subrange were explicitly stated. For example, the range "0.1% to approximately 5%" or "0.1% to 5%" should be interpreted to include not only approximately 0.1% to approximately 5%, but also individual values ​​within the indicated range (e.g., 1%, 2%, 3%, and 4%) and subranges (e.g., 0.1% to 0.5%, 1.1% to 2.2%, and 3.3% to 4.4%). The notation "X to Y" has the same meaning as "approximately X to approximately Y" unless otherwise specified. Similarly, the notation "X, Y, or Z" has the same meaning as "about X, about Y, or about Z" unless otherwise specified.

[0083] Specific embodiments of the subject matter have been described. As will be apparent to those skilled in the art, other embodiments, modifications, and combinations of the described embodiments are within the scope of the following claims. Although the operations are shown in a specific order in the drawings or claims, this should not be understood as requiring that such operations be performed in a specific illustrated or sequential order, or that all illustrated operations (some operations may be interpreted as optional) be performed in order to obtain the desired results. In certain circumstances, multitasking or parallel processing (or a combination of multitasking and parallel processing) may be advantageous and performed in a manner deemed appropriate.

[0084] Furthermore, the separation or integration of various system modules and components in the embodiments described above should not be understood as requiring such separation or integration in all embodiments. The components and systems described can generally be integrated or packaged into multiple products.

[0085] Accordingly, the embodiments described above do not define or limit this disclosure. Other modifications, substitutions, and alterations are also possible without departing from the spirit and scope of this disclosure.

Claims

1. A structure embodied in a machine-readable medium used in the design process, the structure includes an integrated gas distribution nozzle assembly, and the integrated gas distribution nozzle assembly is Upper electrode section, Lower electrode section, Multiple joining structures that connect the lower electrode portion and the upper electrode portion, One or more gas region separation walls, The upper electrode section, the lower electrode section, multiple bonding structures, and one or more gas region separation walls are made of the same material. Each of the multiple bonding structures is positioned between the upper electrode portion and the lower electrode portion and is coupled to them. Each of the multiple junction structures is configured to conduct high-frequency (RF) energy and thermal energy between the upper electrode portion and the lower electrode portion. One or more gas region separation walls are positioned between the upper electrode section and the lower electrode section and coupled to them. The structure comprises one or more gas region separation walls configured to separate the region between the upper electrode section and the lower electrode section into two or more plenum chambers.

2. The structure according to claim 1, wherein the structure exists on a storage medium as a data format used for exchanging layout data.

3. The structure according to claim 1, wherein the structure includes at least one of a test data file, characteristic data, verification data, or design specifications.

4. The structure according to claim 1, wherein the same material is an electrical conductor formed from a metal or a metal alloy.

5. The structure according to claim 1, wherein one or more gas region separation walls are annular walls that separate at least an inner plenum chamber from an outer plenum chamber in the region between the upper electrode portion and the lower electrode portion.

6. The structure according to claim 1, wherein the lower electrode portion is provided with a plurality of gas output holes that connect one of two or more plenum chambers to the outer surface of the lower electrode portion.

7. The structure according to claim 1, wherein the integrated gas distribution nozzle assembly comprises a cooling unit positioned above the upper electrode unit and coupled to the upper electrode unit, the cooling unit being configured to provide cooling to the upper electrode unit.

8. The structure according to claim 7, wherein the integrated gas distribution nozzle assembly is equipped with an embedded sensor for measuring the flow rate of cooling fluid circulating in the cooling section, the cooling fluid circulating from the chiller to the cooling section and providing cooling to the upper electrode section.

9. The structure according to claim 7, wherein the integrated gas distribution nozzle assembly comprises a high-frequency block section positioned above the cooling section and coupled to the cooling section, the high-frequency block section coupling high-frequency energy to the gas in two or more plenum chambers.

10. The structure according to claim 1, wherein the cross-sectional shape of each of the multiple joint structures includes one of cylindrical, angled, trapezoidal, hourglass, and rectangular.

11. The structure according to claim 1, wherein the integrated gas distribution nozzle assembly comprises one or more sensors embedded in one or more of a plurality of joint structures.

12. A plasma processing system comprising an integrated gas distribution nozzle assembly, wherein the integrated gas distribution nozzle assembly is Upper electrode section, Lower electrode section, Multiple joining structures that connect the lower electrode portion and the upper electrode portion, One or more gas region separation walls, The upper electrode section, the lower electrode section, multiple bonding structures, and one or more gas region separation walls are made of the same material. Each of the multiple bonding structures is positioned between the upper electrode portion and the lower electrode portion and is coupled to them. Each of the multiple junction structures is configured to conduct high-frequency (RF) energy and thermal energy between the upper electrode portion and the lower electrode portion. One or more gas region separation walls are positioned between the upper electrode section and the lower electrode section and coupled to them. A plasma processing system comprising a gas region separation wall, one or more of which is configured to separate the region between the upper electrode section and the lower electrode section into two or more plenum chambers.

13. The plasma processing system according to claim 12, wherein the same material is an electrical conductor formed from a metal or a metal alloy.

14. The plasma processing system according to claim 12, wherein the integrated gas distribution nozzle assembly is positioned above the upper electrode and comprises a cooling unit coupled to the upper electrode, the cooling unit being configured to provide cooling to the upper electrode.

15. The plasma processing system according to claim 14, wherein the integrated gas distribution nozzle assembly includes an embedded sensor for measuring the flow rate of a cooling fluid circulating in the cooling section, the cooling fluid circulating from the chiller to the cooling section and providing cooling to the upper electrode section.

16. The plasma processing system according to claim 12, wherein the integrated gas distribution nozzle assembly comprises one or more sensors embedded in one or more of a plurality of joint structures.

17. A method comprising the step of laminating an integrated gas distribution nozzle assembly, wherein the step of laminating an integrated gas distribution nozzle assembly is: A process of forming multiple layers including the lower electrode portion, A step of forming multiple layers including multiple bonding structures that are bonded to the lower electrode portion, A step of forming multiple layers, each including one or more gas region separation walls coupled to the lower electrode portion, A process of forming multiple layers, including multiple bonding structures and upper electrode portions bonded to one or more gas region separation walls, The upper electrode section, the lower electrode section, multiple bonding structures, and one or more gas region separation walls are made of the same material. Each of the multiple bonding structures is positioned between the upper electrode portion and the lower electrode portion and is coupled to them. Each of the multiple junction structures is configured to conduct high-frequency (RF) energy and thermal energy between the upper electrode portion and the lower electrode portion. One or more gas region separation walls are positioned between the upper electrode section and the lower electrode section and coupled to them. A method comprising the step of configuring one or more gas region separation walls to separate the region between an upper electrode section and a lower electrode section into two or more plenum chambers.

18. The method according to claim 17, wherein the step of manufacturing an integrated gas distribution nozzle assembly in a laminated manner includes the step of forming a plurality of layers including a cooling section that is positioned above the upper electrode section and coupled to the upper electrode section, the cooling section being configured to provide cooling to the upper electrode section.

19. The method according to claim 18, wherein the integrated gas distribution nozzle assembly includes an embedded sensor for measuring the flow rate of a cooling fluid circulating in the cooling section, the cooling fluid circulating from the chiller to the cooling section and providing cooling to the upper electrode section.

20. The method according to claim 17, wherein the integrated gas distribution nozzle assembly comprises one or more sensors embedded in one or more of a plurality of joint structures.

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