Heat treatment chamber status based on thermal sensor readings
JP2026517585APending Publication Date: 2026-06-02APPLIED MATERIALS INC
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2024-01-23
- Publication Date
- 2026-06-02
AI Technical Summary
Technical Problem
The thermal behavior of semiconductor processing chambers changes over time due to coating formation and component deterioration, leading to inconsistent deposition results, which is not effectively monitored by conventional methods.
Method used
Monitor the thermal behavior of the chamber using distributed temperature sensors to record temperature rate changes, train a model to predict deposition outcomes, and identify specific components causing discrepancies.
Benefits of technology
Enables consistent and reliable epitaxial deposition by identifying and addressing changes in chamber performance, ensuring predictable on-wafer results through continuous monitoring and predictive modeling.
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Smart Images
Figure 2026517585000001_ABST
Abstract
A method for characterizing a heat treatment chamber may involve training a model using temperature rate of change data from an existing heat treatment chamber. A supervised learning process can label the rate of change data based on the deposition profile on the substrate. The trained model can be used to characterize other chambers, and it can be determined whether the predicted performance will match that of the chamber used to train the model. Temperature data can be obtained and rate of change data derived using an inert process with a carrier gas, without actually depositing layers on the substrate. The rate of change data is provided to the model, and the model can generate component-specific outputs that characterize how well the chamber is predicted to match the characteristic state of the chamber (matching at different times) or match between different chambers.
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