Tungsten alloy wire and its manufacturing method, and its use in cutting semiconductor materials

Abstract

This application relates to the technical field of tungsten alloy materials, and more particularly to tungsten alloy wires, methods for manufacturing the same, and their use in cutting semiconductor materials. The tungsten alloy consists of, as elements, L 0.4~1.1 wt%, Z 0.001~0.25 wt%, the remainder being tungsten and unavoidable impurities, where L is one or more of lanthanum, cerium, praseodymium, neodymium, gadolinium, and erbium, and Z contains oxygen and boron, the wire diameter is 20~60 μm, and linear L or L compounds are present along the axial direction of the wire, with an average radial width D of L or L compounds being 5 nm or less. This invention improves the processing performance of tungsten alloy wires by doping linear L elements between tungsten matrices and controlling the average width of L in the radial direction to 5 nm or less, thereby enabling the wire to have a tensile strength of 5000 MPa or more with a wire diameter of 20 to 60 μm.

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