Metal introduction into hard masks for patterning high aspect ratio devices

Abstract

A method for patterning a boron-containing hard mask includes patterning an oxide hard mask formed on a boron-containing hard mask, and patterning a boron-containing hard mask using the patterned oxide hard mask, wherein the oxide hard mask contains silicon oxide (SiO2), the boron-containing hard mask is doped with one or more metal elements, and the patterning of the boron-containing hard mask includes etching the boron-containing hard mask through openings in the patterned oxide hard mask using an etching mixed gas containing chlorine (Cl2), hydrogen bromide (HBr), and oxygen (O2).

Claims

1. A method for patterning a boron-containing hard mask, Patterning an oxide hard mask formed on a boron-containing hard mask, Patterning the boron-containing hard mask using a patterned oxide hard mask. Includes, The aforementioned oxide hard mask is silicon dioxide (SiO ２ ) including, The boron-containing hard mask is doped with one or more metal elements. Patterning the aforementioned boron-containing hard mask involves chlorine (Cl ２ ), hydrogen bromide (HBr), and oxygen (O ２ A method comprising etching the boron-containing hard mask through openings in the patterned oxide hard mask using an etching mixed gas containing ).

2. The method according to claim 1, wherein the boron concentration in the boron-containing hard mask is 20% to 100%.

3. The method according to claim 1, wherein the one or more metallic elements include tungsten (W).

4. The method according to claim 1, wherein the concentration of the one or more metal elements is 0.5% to 80%.

5. The method according to claim 4, wherein the etching selectivity of the boron-containing hard mask over the oxide hard mask is greater than 8.

6. The method according to claim 1, wherein the oxide hard mask has a thickness of 100 Å to 3000 Å, and the limit dimension of the opening of the patterned oxide hard mask is 10 nm to 100 nm.

7. The method according to claim 1, wherein the boron-containing hard mask has a thickness of 500 Å to 5000 Å, and the patterned openings of the boron-containing hard mask are 10 nm to 100 nm.

8. The method according to claim 1, wherein the etching mixed gas further contains a fluorine-containing gas.

9. A method for patterning a boron-containing hard mask, Patterning an oxide hard mask formed on a boron-containing hard mask, Patterning the boron-containing hard mask using a patterned oxide hard mask. Includes, The aforementioned oxide hard mask is silicon dioxide (SiO ２ ) including, Patterning the aforementioned boron-containing hard mask involves chlorine (Cl ２ ), hydrogen bromide (HBr), oxygen (O ２ A method comprising etching the boron-containing hard mask through openings in the patterned oxide hard mask using an etching mixed gas containing a metal-containing etchant.

10. The aforementioned metal-containing etchant is tungsten hexafluoride (WF ６ ) or tin chloride (SnCl ４ The method according to claim 9, including )

11. The method according to claim 9, wherein the boron concentration in the boron-containing hard mask is 20% to 100%.

12. The method according to claim 9, wherein the oxide hard mask has a thickness of 100 Å to 3000 Å, and the limit dimension of the opening of the patterned oxide hard mask is 10 nm to 100 nm.

13. The method according to claim 9, wherein the boron-containing hard mask has a thickness of 500 Å to 5000 Å, and the patterned openings of the boron-containing hard mask are 10 nm to 100 nm.

14. The method according to claim 9, wherein the etching mixed gas further contains a fluorine-containing gas.

15. A method for patterning a boron-containing hard mask, Patterning an oxide hard mask formed on a boron-containing hard mask, Patterning the boron-containing hard mask using a patterned oxide hard mask. Includes, The oxide hard mask contains silicon oxide (SiO ２ ), and The boron-containing hard mask is doped with one or more metal elements. Patterning the aforementioned boron-containing hard mask involves chlorine (Cl ２ ), hydrogen bromide (HBr), oxygen (O ２ A method comprising etching the boron-containing hard mask through openings in the patterned oxide hard mask using an etching mixed gas containing a metal-containing etchant.

16. The method according to claim 15, wherein the boron concentration in the boron-containing hard mask is 20% to 10%.

17. The method according to claim 15, wherein the one or more metallic elements include tungsten (W).

18. The method according to claim 15, wherein the concentration of the one or more metal elements is 0.5% to 80%.

19. The aforementioned metal-containing etchant is tungsten hexafluoride (WF ６ ) or tin chloride (SnCl ４ The method according to claim 15, including )

20. The method according to claim 15, wherein the etching mixed gas further contains a fluorine-containing gas.

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