Patterned material and method for manufacturing and using the same

Abstract

Patterned materials and methods for manufacturing and using them are disclosed herein. For example, a patterned material is disclosed herein that comprises a first plurality of nanostructures patterned on a first surface of a substrate, and optionally further comprising a second plurality of nanostructures patterned on a second surface of the substrate, wherein the second surface is opposite to and separate from the first surface. In some embodiments, the first plurality of nanostructures and / or the second plurality of nanostructures have an average aspect ratio of 0.5 or greater. In some embodiments, the patterned material exhibits anti-glare (anti-reflective) properties, dustproof properties, anti-fogging properties, scratch-resistant properties, self-cleaning properties, or a combination thereof. Methods for manufacturing and using any of the patterned materials disclosed herein are also disclosed herein. Manufactured articles and / or devices containing any of the patterned materials disclosed herein are also disclosed herein.

Claims

1. A patterned material comprising a first plurality of nanostructures patterned on a first surface of a substrate, The first plurality of nanostructures have a first average aspect ratio of 0.5 or more. The first plurality of nanostructures include a first plurality of pillars extending from the first surface of the substrate, The first plurality of nanostructures are arranged in a first regular arrangement such that they are periodic. The first plurality of nanostructures and the substrate are alumina (aluminum oxide, Al ２ O ３ ) (for example, alumina-based transparent ceramic material), including transparent ceramic material, The first plurality of nanostructures are arranged on the first surface of the substrate in an area of ​​10 square micrometers (μm). ２ A patterned material that is substantially uniform over a surface area of ​​) or more.

2. The patterned material according to claim 1, wherein the first plurality of nanostructures are integrally formed with the first surface of the substrate.

3. The patterned material according to claim 1 or 2, wherein the first plurality of pillars have a first average characteristic dimension (e.g., diameter) and a first average height, and the first average characteristic dimension differs along at least a portion of the first average height (e.g., at least a portion of each of the first plurality of pillars is tapered).

4. The patterned material according to any one of claims 1 to 3, wherein the first regular arrangement includes a two-dimensional arrangement.

5. The alumina-based transparent ceramic material is sapphire (single crystal aluminum oxide), aluminum oxynitride spinel (Al ２３ O ２７ N ５ (Abbreviated as AlON), yttrium aluminum garnet (YAG), magnesium spinel aluminate (MgAl ２ O ４ A patterned material according to any one of claims 1 to 4, comprising alumina-based glass, derivatives thereof, or combinations thereof.

6. The patterned material according to any one of claims 1 to 5, wherein the alumina-based transparent ceramic material includes sapphire.

7. The patterned material according to any one of claims 1 to 6, wherein the alumina-based transparent ceramic material has a Mohs hardness of 7 or more, 7.5 or more, 8 or more, 8.5 or more, or 9 or more.

8. The substrate has a second surface, the second surface being opposite to and separate from the first surface (for example, the first surface being the upper surface and the second surface being the lower surface), and the patterned material further comprises a second plurality of nanostructures patterned on the second surface of the substrate. The aforementioned second plurality of nanostructures have a second average aspect ratio of 0.5 or more. The second plurality of nanostructures include a second plurality of pillars extending from the second surface of the substrate, The second plurality of nanostructures are arranged in a second regular arrangement such that they are periodic. The second plurality of nanostructures include the alumina-based transparent ceramic material, The second plurality of nanostructures are substantially uniform over a surface area of 10 square micrometers (μm ２ ) or more on the second surface of the substrate. The patterned material according to any one of claims 1 to 7.

9. The patterned material according to claim 8, wherein the second plurality of nanostructures are integrally formed with the second surface of the substrate.

10. The patterned material according to claim 8 or 9, wherein the second plurality of pillars have a second average characteristic dimension (e.g., diameter) and a second average height, and the second average characteristic dimension differs along at least a portion of the second average height (e.g., at least a portion of each of the second plurality of pillars is tapered).

11. The patterned material according to any one of claims 8 to 10, wherein the second regular arrangement includes a two-dimensional arrangement.

12. The patterned material according to any one of claims 8 to 11, wherein the second plurality of nanostructures is the same as the first plurality of nanostructures.

13. The patterned material according to any one of claims 1 to 12, wherein the patterned material exhibits improved anti-glare (anti-reflective) properties, dustproof properties, anti-fogging properties, scratch-resistant properties, self-cleaning properties, or a combination thereof, compared to, for example, a substrate without patterning.

14. A method for producing a patterned material according to any one of claims 1 to 13.

15. The method described above is The method involves patterning the photoresist layer of a first layered stack, thereby creating a second layered stack in which the photoresist layer is patterned. The present invention relates to the creation of a second layered stack in which the first layered stack includes a photoresist layer, an anti-reflective layer, a polysilicon layer, and a substrate having a first surface, wherein the polysilicon layer is disposed on the first surface of the substrate, the anti-reflective layer is disposed on the polysilicon layer, and as a result, the polysilicon layer is sandwiched between the anti-reflective layer and the first surface of the substrate, and the photoresist layer is disposed on the anti-reflective layer, and as a result, the anti-reflective layer is sandwiched between the photoresist layer and the polysilicon layer. The anti-reflective layer of the second layered stack is patterned to transfer the pattern of the photoresist layer to the anti-reflective layer, thereby creating a third layered stack in which the photoresist layer and the anti-reflective layer are patterned. The polysilicon layer of the third layered stack is patterned to transfer the pattern of the anti-reflective layer to the polysilicon layer, thereby creating a fourth layered stack in which the photoresist layer, the anti-reflective layer, and the polysilicon layer are patterned. The method according to claim 14, comprising etching the fourth layered stack to transfer the pattern of the polysilicon layer to the substrate, removing the photoresist layer, the anti-reflective layer, and the polysilicon layer, thereby producing the patterned material.

16. The method described above is The method involves patterning the photoresist layer of a first precursor layered stack, thereby creating a first intermediate layered stack in which the photoresist layer is patterned. The first precursor layer-like stack comprises a substrate having the photoresist layer, a polysilicon layer, and a first surface, wherein the polysilicon layer is disposed on the first surface of the substrate, the photoresist layer is disposed on the polysilicon layer, and as a result, the polysilicon layer is sandwiched between the photoresist layer and the first surface of the substrate, thereby creating the first intermediate layer-like stack. The polysilicon layer of the first intermediate layer stack is patterned to transfer the pattern of the photoresist layer to the polysilicon layer, thereby creating a second intermediate layer stack in which the photoresist layer and the polysilicon layer are patterned. The method according to claim 14, comprising etching the second intermediate layer stack to transfer the pattern of the polysilicon layer to the substrate, removing the photoresist layer and the polysilicon layer, thereby producing the patterned material.

17. The method according to any one of claims 14 to 16, wherein the substrate has a second surface, the second surface being opposite to and separate from the first surface (for example, the first surface being an upper surface and the second surface being a lower surface), and the method further comprises patterning the second surface.

18. The method described above is The method involves patterning the photoresist layer of a fifth layered stack, thereby creating a sixth layered stack in which the photoresist layer is patterned. The fifth layered stack comprises a photoresist layer, an anti-reflective layer, a polysilicon layer, and a substrate having the second surface, wherein the polysilicon layer is disposed on the second surface of the substrate, the anti-reflective layer is disposed on the polysilicon layer, and as a result, the polysilicon layer is sandwiched between the anti-reflective layer and the second surface of the substrate, and the photoresist layer is disposed on the anti-reflective layer, and as a result, the anti-reflective layer is sandwiched between the photoresist layer and the polysilicon layer, thereby creating the sixth layered stack. The anti-reflective layer of the sixth layered stack is patterned to transfer the pattern of the photoresist layer to the anti-reflective layer, thereby creating a seventh layered stack in which the photoresist layer and the anti-reflective layer are patterned. The polysilicon layer of the seventh layered stack is patterned to transfer the pattern of the anti-reflective layer to the polysilicon layer, thereby creating an eighth layered stack in which the photoresist layer, the anti-reflective layer, and the polysilicon layer are patterned. The method according to claim 17, comprising etching the eighth layered stack to transfer the pattern of the polysilicon layer to the substrate, removing the photoresist layer, the anti-reflective layer, and the polysilicon layer, thereby producing the patterned material (for example, the first surface and the second surface are patterned).

19. The method described above is The method involves patterning the photoresist layer of a second precursor layered stack, thereby creating a third intermediate layered stack in which the photoresist layer is patterned. The third intermediate layer-like stack is fabricated such that the second precursor layer-like stack includes the photoresist layer, the polysilicon layer, and the substrate having the second surface, the polysilicon layer being disposed on the second surface of the substrate, the photoresist layer being disposed on the polysilicon layer, and as a result the polysilicon layer being sandwiched between the photoresist layer and the second surface of the substrate. The polysilicon layer of the third intermediate layer stack is patterned to transfer the pattern of the photoresist layer to the polysilicon layer, thereby creating a fourth intermediate layer stack in which the photoresist layer and the polysilicon layer are patterned. The method according to claim 17, comprising etching the fourth intermediate layer stack to transfer the pattern of the polysilicon layer to the substrate, removing the photoresist layer and the polysilicon layer, thereby producing the patterned material.

20. The method according to any one of claims 15 to 19, wherein patterning the photoresist layer includes using interference lithography.

21. The method according to any one of claims 15 to 20, wherein patterning the photoresist includes Lloyd's mirror interference lithography using two orthogonal exposures.

22. The method according to any one of claims 15 to 21, further comprising patterning the photoresist by developing the photoresist by exposing the patterned photoresist to a solvent.

23. Patterning the anti-reflective layer is done by inductively coupled plasma reactive ion etching (ICP-RIE), for example, O ２ The method according to any one of claims 15 to 22, comprising using inductively coupled plasma reactive ion etching (ICP-RIE).

24. The method according to any one of claims 15 to 23, wherein patterning the polysilicon layer is performed using an ICP-RIE with low RF power, for example, an HBr ICP-RIE with low RF power.

25. The method according to any one of claims 15 to 24, wherein the low RF power used to pattern the polysilicon layer improves etching selectivity.

26. Etching the fourth layered stack, the eighth layered stack, the second intermediate layered stack, the fourth intermediate layered stack, or any combination thereof independently produces an ICP-RIE, for example, HBr / BCl ３ The method according to any one of claims 15 to 25, comprising using ICP-RIE.

27. A method for using a patterned material according to any one of claims 1 to 13, or a patterned material produced by the method according to any one of claims 14 to 26.

28. A manufactured article and / or device comprising a patterned material according to any one of claims 1 to 13, or a patterned material prepared by the method according to any one of claims 14 to 26.

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