Manufacturing of substrate support devices using inorganic dielectric junctions

Abstract

The device comprises a first plate containing a first dielectric material and having a first set of electrodes embedded in it, a second plate containing a second dielectric material and having a second set of electrodes embedded in it, and an inorganic dielectric junction containing an inorganic dielectric material disposed between the first plate and the second plate. The first plate and the second plate are arranged on a base structure.

Description

Technical Field

[0001] Embodiments of the present invention generally relate to substrate processing, and more particularly to the manufacture of substrate support devices such as electrostatic chucks (ESCs) and / or heater devices using inorganic dielectric bonding. Background

[0002] An electronic device manufacturing apparatus can include a plurality of chambers such as a processing chamber and a load lock chamber. Such an electronic device manufacturing apparatus can dispose a robot apparatus configured to transfer a substrate between the plurality of chambers within a transfer chamber. In some cases, a plurality of substrates are transferred together. In an electronic device manufacturing apparatus, one or more processes such as a deposition process, an etching process, and / or a lithography process can be performed on a substrate using a processing chamber. An electrostatic chuck (ESC) is a device that can generate an electrostatic force to firmly hold a substrate (e.g., a wafer) against a platen without requiring a physical force during one or more processes such as deposition, etching, and / or lithography processes. By using an electrostatic force without requiring a physical force, the risk of damage to the substrate being processed can be reduced, and more stable and / or uniform holding can be achieved compared to other chucks (e.g., mechanical chucks). Overview

[0003] In some embodiments, a substrate support assembly is provided. The substrate support assembly includes a substrate support. The substrate support includes a first plate including a first dielectric material and having a first set of electrodes embedded therein, a second plate including the first dielectric material or a second dielectric material and having a second set of electrodes embedded therein, and an inorganic dielectric joint including an inorganic dielectric material disposed between the first plate and the second plate. Further, the substrate support assembly includes a cooling plate joined to the substrate support, and the cooling plate includes a set of cooling channels.

[0004] In some embodiments, a processing chamber is provided. The processing chamber comprises a substrate support assembly including a substrate support bonded to a cooling plate including a set of cooling channels. The substrate support comprises a first plate including a first dielectric material and having a first set of electrodes embedded in it, a second plate including the first or second dielectric material and having a second set of electrodes embedded in it, and an inorganic dielectric junction including an inorganic dielectric material disposed between the first and second plates.

[0005] In some embodiments, a method is provided. The method includes forming a substrate support for a substrate support assembly. Forming the substrate support includes bonding a first plate to a second plate using an inorganic dielectric junction comprising an inorganic dielectric material disposed between a first plate and a second plate. The first plate comprises a first dielectric material in which a first set of electrodes is embedded, and the second plate comprises a second dielectric material comprising the first dielectric material or the second dielectric material in which a second set of electrodes is embedded. Furthermore, the method includes mounting the substrate support to a base structure comprising a cooling plate having a set of cooling channels.

[0006] These embodiments and other embodiments of the present disclosure provide a number of other aspects and features. Other features and aspects of the embodiments of the present disclosure will become more fully apparent from the following detailed description, claims and accompanying drawings. [Brief explanation of the drawing]

[0007] The embodiments described herein are illustrative and not limiting to those described herein. In the drawings, similar reference numerals indicate similar elements. Different references to “one” or “one” embodiment in this disclosure do not necessarily mean the same embodiment, but rather that such references mean at least one embodiment. [Figure 1] This is a cross-sectional view of a processing chamber according to several embodiments. [Figure 2] ~ [Figure 4]This is a cross-sectional view of a substrate support device manufactured using an inorganic dielectric junction, according to several embodiments. [Figure 5] This is a side cross-sectional view of a substrate support assembly according to several embodiments. [Figure 6] ~ [Figure 7] This is a flowchart illustrating an exemplary method for manufacturing a substrate support assembly using an inorganic dielectric junction, according to several embodiments. Detailed description of the embodiment

[0008] This specification describes embodiments for manufacturing substrate support devices (hereinafter also referred to as substrate support devices) such as electrostatic chucks (ESCs) and / or heater devices using inorganic dielectric junctions. An ESC may include a flat ESC plate (or pack) and a set of chucking electrodes embedded in the pack. When a voltage is applied to the set of chucking electrodes, an electrostatic field is generated between the ESC plate and the substrate, with an intensity proportional to the applied voltage and the distance between the ESC plate and the substrate surface. Therefore, if the applied voltage is sufficiently high, the electrostatic field can be strong enough to generate an electrostatic force that firmly holds the substrate on the ESC plate. ESCs can be designed to accommodate various substrate sizes and / or shapes. For example, an ESC may have ring-shaped electrodes embedded in the ESC plate to hold a circular substrate. As another example, an ESC may have grid-shaped chucking electrodes embedded in the ESC plate to hold a square or rectangular substrate.

[0009] In substrate processing using ESCs to firmly hold the substrate, the non-uniformity of the ESC's structure can pose a problem in achieving uniform temperature control across the entire substrate surface. For example, some areas of the ESC may have gas holes, while others have lift pin holes offset laterally from the gas holes. Furthermore, some areas may have chucking electrodes, while others may have heating electrode sets offset laterally from the chucking electrodes. Because the ESC's structure can vary both laterally and directionally, achieving uniform heat conduction between the ESC and the substrate can be complex and extremely difficult. This can result in localized high-temperature and low-temperature areas across the entire chuck surface, leading to non-uniform processing results along the substrate surface.

[0010] To address at least the aforementioned drawbacks, embodiments described herein provide for manufacturing substrate support devices, such as ESCs and / or substrate processing heaters, using inorganic dielectric bonding. For example, the substrate support device may include an ESC plate (e.g., a pack) bonded to a heating plate by ceramic or glass bonding. The ESC plate may include a set of embedded chucking electrodes. The heating plate may include a set of embedded heating electrodes for heating the substrate to a target temperature during a manufacturing process such as deposition, etching, and / or lithography. The temperature of the heating plate can be controlled by adjusting the power supplied to the set of heating electrodes via a temperature controller connected to the set of heating electrodes. The temperature controller allows for precise control of the substrate temperature within the range necessary to optimize the manufacturing process being performed.

[0011] The ESC plate can be formed from a first dielectric material, and the heating plate can be formed from either the first dielectric material or the second dielectric material. In some embodiments, at least one of the first dielectric material or the second dielectric material is a ceramic material. In some embodiments, at least one of the first dielectric material or the second dielectric material includes aluminum nitride (AlN). In some embodiments, at least one of the first dielectric material or the second dielectric material includes aluminum oxide or alumina (Al2O3).

[0012] The heating plate can be bonded to the ESC plate using an inorganic dielectric junction. Diffusion bonding is a bonding process formed at the interface of two materials by pressing them together under high-temperature conditions, allowing atoms to diffuse across the interface; however, inorganic dielectric bonding can be formed by using an additional inorganic dielectric bonding material. Some of the processes for processing the substrate may be high-temperature processes that run optimally at appropriate high temperatures. For example, some processes may run at temperatures above 600°C. Some bonding materials may not withstand such high temperatures. Also, some bonding materials can withstand such high temperatures but, being formed from conductive materials (e.g., metallic bonding), cannot provide electrical insulation between the ESC plate and the heating plate. Furthermore, some bonding materials do not provide sufficient plasma erosion resistance during plasma-based manufacturing processes.

[0013] To provide electrical insulation, high-temperature resistance, and plasma erosion resistance during substrate processing, an ESC plate can be bonded to a heating plate using an inorganic dielectric junction that forms an inorganic dielectric junction. The inorganic dielectric junction can be formed from an inorganic material (i.e., a material that does not contain carbon-hydrogen bonds) that provides adequate electrical insulation between the ESC plate and the heating plate and also provides resistance to various stresses that occur during substrate processing (e.g., high temperatures and plasma erosion). In some embodiments, the inorganic dielectric junction enables high-temperature operations above 600°C. In some embodiments, the inorganic dielectric junction enables high-temperature operations above 700°C.

[0014] Furthermore, the inorganic material in the inorganic dielectric junction can be selected to have a coefficient of thermal expansion (CTE) approximately equal to that of the first dielectric material of the ESC plate and the second dielectric material of the heating plate. CTE is a measure that indicates how much a material expands when heated and / or how much it contracts when cooled. For example, CTE can be defined as the fractional change per degree Celsius of temperature change in at least one physical parameter of the material (e.g., length or volume). When two materials with different CTEs are joined, stress is generated in the material as a result of expansion / contraction caused by temperature changes, which can lead to deformation such as cracking and delamination. Therefore, by selecting an inorganic material with a CTE approximately equal to that of the first dielectric material of the ESC plate and the second dielectric material of the heating plate, deformation due to expansion / contraction stress caused by temperature changes that may occur during substrate processing can be prevented.

[0015] In some embodiments, the inorganic dielectric material includes a glass material. For example, the glass material may include at least one of silicon (Si), barium (Ba), calcium (Ca), yttrium (Y), magnesium (Mg), oxygen (O), boron (B), etc. In some embodiments, the inorganic dielectric material includes a ceramic material containing at least one of Ca, Si, O, Mg, B, aluminum (Al), nickel (Ni), iron (F), etc. The inorganic dielectric material can be modified (e.g., doped) to achieve a combination of target properties such as electrical insulation, high temperature resistance, and / or plasma erosion resistance. In some embodiments, the inorganic dielectric material used in the inorganic dielectric junction includes one or more materials not included in the first plate and / or second plate.

[0016] In some embodiments, the substrate support device is a multi-zone ESC including multiple temperature zones ("zones"). The multi-zone ESC may include a set of adjustable heaters that enable high-resolution, zone-independent temperature control for adjusting the temperature profile of a substrate fixed and held by the ESC during processing. To achieve a target temperature profile, the temperature of each zone can be controlled independently by controlling the power to each adjustable heater (e.g., increasing, decreasing, or keeping constant). In some embodiments, the set of zones includes four zones (e.g., a 4-zone (4Z) ESC). In some embodiments, the set of adjustable heaters includes a set of primary heaters. The set of primary heaters overlaps with the set of temperature zones to enable coarse temperature control. In some embodiments, the set of adjustable heaters includes a set of secondary heaters. The set of secondary heaters enables fine temperature control across multiple subzones defined within a zone. In some embodiments, the multiple subzones include at least 50 subzones. In some embodiments, the multiple subzones include at least 150 subzones.

[0017] For example, the manufacture of a substrate support device may include obtaining or manufacturing a first plate. A first set of electrodes may be embedded in the first plate. In some embodiments, obtaining or manufacturing the first plate may include embedding a first set of electrodes in the first plate (e.g., forming the first plate around the first set of electrodes by a sintering process). In some embodiments, the first plate is an ESC plate, and the first set of electrodes includes a set of chucking electrodes. In some embodiments, the first plate is a heating plate, and the first set of electrodes includes a set of heating electrodes. Furthermore, the manufacture of a substrate support device may include joining the first plate to a second plate. A second set of electrodes may be embedded in the second plate. In some embodiments, the manufacture of a substrate support device may further include embedding a second set of electrodes in the second plate before joining the first plate to the second plate (e.g., forming the second plate around the second set of electrodes by a sintering process).

[0018] In some embodiments, the second plate is a heating plate, and the second set of electrodes includes a set of heating electrodes (for example, if the first plate is an ESC plate). In some embodiments, the second plate is an ESC plate, and the second set of electrodes includes a set of chucking electrodes (for example, if the first plate is a heating plate). In some embodiments, the manufacture of the substrate support device may further include forming one or more additional plates and / or bonding one or more additional plates to the second plate. For example, the second plate may be bonded to a third plate (and may be manufactured to include a third set of electrodes). In some embodiments, the third plate includes a dielectric material. For example, the third plate may include a ceramic material. The ceramic material of the third plate may be the same as or different from the ceramic material of the first plate and / or the second plate. In some embodiments, the third plate is bonded to the second plate via an inorganic dielectric junction.

[0019] The first plate, second plate, and / or third plate form a substrate support, which can be attached to a cooling plate, base plate, and / or facility plate to complete the substrate support assembly. In some embodiments, the substrate support is bonded to a cooling plate in which multiple cooling channels are embedded. The cooling channels are pathways through which a cooling fluid (e.g., water) flows through the substrate support to dissipate heat without hindering the substrate support's ability to firmly hold the wafer during substrate processing. In some embodiments, the substrate support maintains the temperature of the substrate support and / or the substrate within a safe range, preventing damage to the substrate support, the substrate, and / or the rest of the processing chamber. The design and configuration of the cooling channels may depend on various variables such as the structure of the substrate support and / or the manufacturing process used to process the substrate. Further details regarding the manufacturing method of a substrate support device using inorganic dielectric bonding are described below with reference to Figures 1-6.

[0020] Figure 1 is a cross-sectional view of a processing chamber 100 according to several embodiments. The processing chamber 100 includes a substrate support assembly 148 located inside. The processing chamber 100 includes a chamber body 102 and a lid 104 surrounding an internal volume 106. The chamber body 102 can be manufactured from aluminum, stainless steel, or other suitable material. Generally, the chamber body 102 includes side walls 108 and a bottom 110. An outer liner 116 can be positioned adjacent to the side walls 108 to protect the chamber body 102. The outer liner 116 may be manufactured and / or coated from a plasma or halogen-containing gas resistant material. In one embodiment, the outer liner 116 is manufactured from aluminum oxide. In other embodiments, the outer liner 116 is manufactured or coated from yttria, yttrium alloy, or an oxide thereof. An exhaust port 126 is defined in the chamber body 102, and the internal volume 106 can be coupled to a pump system 128. The pump system 128 may include one or more pumps and throttle valves used to evacuate the internal volume 106 of the processing chamber 100 and adjust the pressure.

[0021] The lid 104 can be supported on the side wall 108. The lid 104 can be opened to access the internal volume 106 of the processing chamber 100, and when closed, it can seal the processing chamber 100. The gas panel 158 is coupled to the processing chamber 100 and can supply processing gas and / or cleaning gas to the internal volume 106 through the gas distribution assembly 130, which is part of the lid 104. Examples of processing gases that can be used for processing in the processing chamber 100 include, among others, C2F6, SF6, SiCl4, HBr, NF3, CF4, CHF3, CH2F3, and Cl 2、 The gas distribution assembly 130 includes halogen-containing gases such as SiF4, and other gases such as O2 and N2O. Examples of carrier gases include N2, He, Ar, and other gases inert to the processing gas (e.g., non-reactive gases). The gas distribution assembly 130 may have a plurality of openings 132 on its downstream surface to guide the gas flow to the surface of the substrate (e.g., wafer) 144. Additionally, the gas distribution assembly 130 may have a central hole through which the gas is supplied via a ceramic gas nozzle. The gas distribution assembly 130 may be manufactured and / or coated with a ceramic material such as silicon carbide or yttria to provide resistance to halogen-containing chemicals and prevent corrosion of the gas distribution assembly 130.

[0022] The substrate support assembly 148 is placed in the internal volume 106 below the gas distribution assembly 130. The substrate support assembly 148 holds the substrate 144 during processing. An inner liner 118 can be coated around the substrate support assembly 148. The inner liner 118 may be made of a halogen-containing gas-resistant material similar to that described with respect to the outer liner 116. In one embodiment, the inner liner 118 may be made from the same material as the outer liner 116.

[0023] In one embodiment, the substrate support assembly 148 includes a mounting plate 162 that supports a shaft 152 connected to a substrate support such as an electrostatic chuck (ESC) 150. The ESC 150 may or may not be connected to a thermally conductive base 164 (e.g., a cooling plate) via a joint 138. In some embodiments, the substrate support 166 can include a plurality of plates joined via an inorganic joint. The substrate support 166 may be a hybrid pack including a chucking region formed from a first dielectric material and a backing region and / or a heating region formed from the first dielectric material and / or a second dielectric material different from the first dielectric material. For example, the first dielectric material can provide high thermal conductivity, and the second dielectric material can provide leakage current stability. In some embodiments, at least one of the first dielectric material or the second dielectric material is a ceramic material. For example, the first dielectric material can include Al2O3, and the backing region can include AlN. Further details regarding the substrate support 166 will be described in more detail below with reference to FIGS. 2-5.

[0024] The mounting plate 162 is coupled to the bottom 110 of the chamber body 102 and can include passages for routing utilities (8, fluids, power lines, sensor leads, etc.) to the thermally conductive base 164 and the substrate support 166. In one embodiment, the mounting plate 162 includes a plastic plate, an equipment plate, and / or a cathode base plate.

[0025] The thermally conductive base 164 and / or the substrate support 166 can include one or more optional embedded heating elements 176, embedded thermal insulators 174, and / or conduits 168, 170 to control the lateral temperature profile of the substrate support assembly 148. As shown, the thermal insulator 174 (also called a thermal break) extends from the upper surface to the lower surface of the thermally conductive base 164. The conduits 168, 170 can be fluidly coupled to a fluid source 172 that circulates a temperature regulating fluid through the conduits 168, 170.

[0026] In one embodiment, the embedded thermal isolator 174 can be disposed between conduits 168 and 170. The heater 176 is controlled by a heater power supply 178. The conduits 168, 170, and the heater 176 can be utilized to control the temperature of the thermally conductive base 164, thereby heating and / or cooling the package 166 and the substrate 144 to be processed. The temperatures of the substrate support 166 and the thermally conductive base 164 can be monitored using temperature sensors 190, 192 that are observable by a controller 195.

[0027] Furthermore, the substrate support 166 can include a plurality of gas passages (e.g., grooves), mesas, and other surface features formed on the upper surface of the package 166. The gas passages can be fluid-coupled to a thermally conductive gas source (such as He) through holes formed in the substrate support 166. During operation, gas is supplied to the gas passages at a controlled pressure, which can improve the heat conduction between the substrate support 166 and the substrate 144.

[0028] The substrate support 166 includes at least one clamp electrode 180 controlled by a chucking power supply 182. Further, the clamp electrode 180 (or other electrodes disposed within the package 166 and / or the thermally conductive base 164) can be connected to one or more RF power supplies 184, 186 through a matching circuit 188 to maintain a plasma formed from a processing gas and / or other gases within the processing chamber 100. Generally, the power supplies 184, 186 can generate RF signals having a frequency of about 50 kHz to about 3 GHz and a maximum power of about 10,000 watts.

[0029] The shaft 152 can be joined to the ESC 150 by joining, brazing, or welding. As shown in the figure, one or more cables (for example, for connecting to an embedded heating element 176, temperature sensors 190, 192, clamp electrodes 180, etc.) may pass through the interior of the shaft 152. The interior of the shaft 152 (also called the interior shaft region) has an isolated environment maintained during and / or between operations performed by the processing chamber 100. In some embodiments, the isolated environment is a vacuum environment. In some embodiments, the isolated environment includes one or more inert gases. For example, one or more inert gases may include an inert gas mixture. The vacuum environment or inert gas can prevent oxidation of the interior of the shaft 152 (e.g., exposed brazing inside the shaft 152) and / or deformation of the interior of the shaft 152 and / or the ESC 150.

[0030] Figure 2 is a side cross-sectional view of a substrate support device ("device") 200 mounted on a cooling plate 250 according to several embodiments. The device 200 may be part of a substrate support assembly used in a processing chamber for substrate processing (e.g., deposition, etching, and / or lithography). In some embodiments, the device 200 is an ESC. In some embodiments, the device 200 is a heater. In some embodiments, the device 200 is a multi-zone ESC for temperature control. In some embodiments, the device 200 includes a plurality of temperature zones ("zones"). For example, the device 200 may include at least four zones. In some embodiments, the device 200 includes a plurality of subzones contained within each zone. In some embodiments, the plurality of subzones include at least 50 subzones. In some embodiments, the plurality of subzones include at least 150 subzones.

[0031] As shown in the figure, the device 200 includes a first plate 210 into which an electrode set 212 is embedded. Additionally, a set of gas distribution channels 214 can be formed within the first plate 210. For example, the set of gas distribution channels 214 can be formed by drilling (e.g., laser drilling) holes in the first plate 210. In some embodiments, the first plate 210 is an ESC plate, and the electrode set 212 includes a set of chucking electrodes that enable the substrate to be firmly held in place on the first plate 210 during substrate processing. In some embodiments, the electrode set 212 includes auxiliary chucking electrodes (AEC) to improve performance during substrate processing and prevent arc discharge and damage. For example, if the voltage applied to the chucking electrodes is too high, the AEC electrodes can dissipate the excess voltage, preventing arc discharge and damage to the substrate. In some embodiments, the first plate 210 has a circular shape when viewed from the top surface of the first plate 210 in order to secure a circular substrate. In some embodiments, the first plate 210 has a rectangular shape when viewed from above in order to secure a rectangular substrate. The first plate 210 is formed from a first dielectric material. In some embodiments, the first dielectric material is a ceramic material. For example, the first dielectric material may include AlN. As another example, the first dielectric material may include Al2O3. In some embodiments, the thickness of the first plate 210 is in the range of about 0.5 millimeters (mm) to about 10 mm. In some embodiments, the thickness of the first plate 210 is in the range of about 1 mm to about 5 mm.

[0032] As further illustrated, a bonding layer 220 is positioned between the first plate 210 and the second plate 230. The second plate 230 is formed from either the first dielectric material or the second dielectric material. In some embodiments, the second dielectric material is a ceramic material. For example, the second dielectric material may include AlN. As another example, the second dielectric material may include Al2O3. In some embodiments, the thickness of the second plate 230 is in the range of about 0.5 mm to about 10 mm. In some embodiments, the thickness of the second plate 230 is in the range of about 2 mm to about 6 mm.

[0033] In some embodiments, the bonding layer 220 includes a first inorganic dielectric material. The first inorganic dielectric material can be selected to have a coefficient of thermal expansion (CTE) that is approximately equal to the coefficients of thermal expansion (CTE) of the first and second dielectric materials. In some embodiments, the first inorganic dielectric material includes a glass material. For example, the glass material may include at least one of Si, Ba, Ca, Y, Mg, O, B, etc. In some embodiments, the first inorganic dielectric material includes other ceramic materials, including at least one of Al, Ca, Si, O, N, Y, Mg, F, B, etc. In some embodiments, the first inorganic dielectric material includes one or more components that are different from at least one of the first and second materials of the first plate 210 and the second plate 230.

[0034] The bonding layer 220 can be formed using an inorganic bonding process. For example, the inorganic bonding process may include applying an inorganic material in the form of a powder, paste, or sheet, bonding plates 210 and 230 together, and pressurizing plates 210 and 230 while heating. In some embodiments, plates 210 and 230 are pressurized below a certain pressure threshold.

[0035] As further illustrated, the bonding layer 235 is positioned between the second plate 230 and the third plate 240. The third plate 240 is formed from a first dielectric material, a second dielectric material, or a third dielectric material. In some embodiments, the third dielectric material is a ceramic material. For example, the third dielectric material may include AlN. As another example, the third dielectric material may include Al2O3. In some embodiments, the thickness of the third plate 240 is in the range of about 0.5 mm to about 10 mm. In some embodiments, the thickness of the third plate 240 is in the range of about 2 mm to about 6 mm.

[0036] In some embodiments, the bonding layer 235 includes a ceramic material. For example, the bonding layer 235 may include a first inorganic dielectric material or a second inorganic dielectric material. The second inorganic dielectric material may be selected to have a coefficient of thermal expansion (CTE) that is approximately equal to that of the second and third dielectric materials. In some embodiments, the second inorganic dielectric material includes a glass material. For example, the glass material may include at least one of Si, Ba, Ca, Y, Mg, O, B, etc. In some embodiments, the inorganic dielectric material includes other ceramic materials including at least one of Al, Ca, Si, O, N, Y, Mg, F, B, etc. In some embodiments, the second inorganic dielectric material includes one or more components different from the first, second and / or third materials of the second plate 230 and / or third plate 240.

[0037] At least one of plate 230 or plate 240 may be a heating plate that enables heating of a substrate fixed to the device 200. In some embodiments, the second plate 230 is a heating plate in which a set of heating electrodes 232 is embedded, and the third plate 240 is a second heating plate in which a set of heating electrodes 242 is embedded. For example, one of the second plate 230 or the third plate 240 may be a primary heating plate that enables primary heating (e.g., coarse temperature control) across multiple zones of the device 200, and the other of the second plate 230 or the third plate 240 may be a secondary heating plate that enables secondary heating (e.g., fine temperature control) across multiple subzones of the device 200. In some embodiments, the device 200 includes four zones.

[0038] For example, the third plate 240 is the primary heating plate of the device 200, and the second set of heating electrodes 242 includes a plurality of secondary heating electrodes, enabling primary heating across a plurality of zones. The second plate 230 is also the secondary heating plate of the device 200, and the first set of heating electrodes 232 includes a plurality of secondary heating electrodes, enabling secondary heating across a plurality of secondary heating zones. In some embodiments, the plurality of subzones includes at least 50 subzones. In some embodiments, the plurality of subzones includes at least 150 subzones.

[0039] As further illustrated, in one embodiment, the bonding layer 245 is positioned between the third plate 240 and the fourth plate 250, bonding the third plate 240 to the fourth plate 250. Here, the fourth plate 250 is a cooling plate that is not part of the substrate support 200. The fourth plate 250 may be a cooling plate in which a plurality of cooling channels, including cooling channels 252, are embedded. The cooling channels, including cooling channels 252, are paths that allow a cooling fluid (e.g., water) to flow through the device 200 without interfering with the device 200's ability to firmly hold the wafer in place during substrate (e.g., wafer) processing. The fourth plate 250 can maintain the temperature of the device 200 and the substrate supported by the device 200 within a safe range, preventing damage to the device 200, the substrate, and / or the rest of the processing chamber. The design and configuration of the cooling channels can depend on various variables, such as the structure of the device 200 and the manufacturing process used for substrate processing. In some embodiments, the fourth plate 250 is formed from a first dielectric material, a second dielectric material, a third dielectric material, or a fourth dielectric material. In some embodiments, the fourth dielectric material is a ceramic material. For example, the fourth dielectric material may include AlN. As another example, the fourth dielectric material may include Al2O3. In some embodiments, the fourth plate 250 is formed from aluminum or another metal having high thermal conductivity. In some embodiments, the thickness of the fourth plate 250 is in the range of about 0.5 mm to about 10 mm. In some embodiments, the thickness of the fourth plate 250 is in the range of about 2 mm to about 6 mm.

[0040] In some embodiments, the bonding layer 245 includes an organic material (i.e., an organic adhesive). Examples of organic materials include silicone, epoxy resin, acrylic adhesive, cyanoacrylate adhesive, phenolic resin, etc. In some embodiments, the bonding layer 245 includes a conductive material (e.g., a metallic material). For example, the bonding layer 245 may be an aluminum bond, an AlSi alloy bond, or another suitable metallic bond. In some embodiments, the bonding layer 245 includes an inorganic material (i.e., an inorganic bond). In some embodiments, the bonding layer 245 includes a dielectric material (e.g., an organic or inorganic dielectric bond). The third inorganic dielectric material can be selected to have a coefficient of thermal expansion (CTE) approximately equal to that of the third and fourth dielectric materials. In some embodiments, instead of using the bonding layer 245, the third plate 240 is fixed to the fourth plate 250 via another fastening mechanism. The fastening mechanism may include a set of fasteners. For example, the third plate 240 can be bolted to the fourth plate 250.

[0041] In some embodiments, at least one sealing structure can be placed between at least one pair of plates to provide insulation, sealing, and / or isolation. For example, sealing structure 244a is placed between the third plate 240 and the fourth plate 250. In some embodiments, the sealing structure is a washer. In some embodiments, the sealing structure is an O-ring or a gasket. In this exemplary example, sealing structure 244b is placed between the first plate 210 and the second plate 230, and sealing structure 244c is placed between the second plate 230 and the third plate 240. In some embodiments, no sealing structure is placed between the first plate 210 and the second plate 230. In some embodiments, no sealing structure is placed between the second plate 230 and the third plate 240.

[0042] Device 200 may include various contacts that enable electrical connections to each electrode set of device 200. As shown in the figure, the contacts may include contacts 260-1 to 260-3 coupled to each electrode set 212, 232, and 242. For example, contact 260-1 is a chucking contact that can be used to apply a voltage to electrode set 212 to generate an electrostatic force and fix the substrate to the first plate 210. Contact 260-1 is a high-voltage contact and can be placed in an insulating sleeve 262 (such as a ceramic tube) that can isolate the high-voltage contact from the external environment. As another example, contact 260-2 is a first heater contact that can be used to apply a voltage to a first set 232 of heating electrodes to control secondary heating of device 200. As yet another example, contact 260-3 is a second heater contact that can be used to apply a voltage to a second set 242 of heating electrodes to control primary heating of device 200.

[0043] Furthermore, the device 200 may include a plug 270 positioned in a region formed within the second plate 230 and / or the third plate 240. The device 200 may be mounted on a fourth plate 250, with the plug 270 sealed between the first plate 210 and the fourth plate 250. The plug 270 can be used to reduce plasma formation and / or arc discharge, preventing damage to the device 200 and / or the substrate. In some embodiments, the plug 270 is a porous plug. The plug 270 may include any suitable material. For example, the plug 270 may include a porous dielectric material. Examples of porous dielectric materials include porous ceramic materials such as porous AlN or Al2O3. The porosity of the plug 270 can be selected so that a heat-conducting fluid (e.g., helium gas) can pass through the ceramic plug and reach the substrate support surface via the gas distribution channel 214, while suppressing plasma formation and / or arc discharge. In some embodiments, the porosity of the plug 270 is in the range of about 30% to about 60%. The plug 270 can be joined to the first plate 210 and the fourth plate 250 using any suitable joining method. For example, the plug 270 can be joined to at least one of the first plate 210, the second plate 230, the third plate 240 and / or the fourth plate 250 using a high-temperature bonding agent (e.g., a high-temperature adhesive).

[0044] In some embodiments, a set of fasteners and / or threaded inserts is embedded within at least one plate (not shown). For example, a set of fasteners may be embedded within at least plate 230 and / or plate 240. In some embodiments, a set of fasteners (e.g., threaded fasteners) and / or threaded inserts is embedded within a feature of plate 230, and plate 240 includes holes that provide access to the threaded inserts or allow the threaded shafts of the threaded fasteners to protrude from the bottom of device 200 (e.g., allowing device 200 to be secured to a fourth plate 250). The set of fasteners and / or threaded inserts may include fasteners formed from a material having a sufficiently low coefficient of thermal expansion and / or a sufficiently high thermal conductivity. In some embodiments, the set of fasteners and / or threaded inserts is a set of molydenum (Mo) fasteners and / or threaded inserts. An example of the use of threaded inserts and fasteners is shown in Figure 5. Further details regarding the manufacture of device 200 will be discussed later with reference to Figure 6. Other examples of devices that can be manufactured using inorganic dielectric junctions are described later with reference to Figures 3-5.

[0045] Figure 3 is a cross-sectional view of a substrate support device ("device") 300 according to several embodiments. The device 300 may be part of a substrate support assembly used in a processing chamber for substrate processing (e.g., deposition, etching, and / or lithography). In some embodiments, the device 300 is an ESC. In some embodiments, the device 300 is a heater. In some embodiments, the device 300 is a multi-zone ESC for temperature control. In some embodiments, the device 300 includes a plurality of temperature zones ("zones"). For example, the device 300 may include at least four zones. In some embodiments, the device 300 includes a plurality of subzones contained within each zone. In some embodiments, the plurality of subzones include at least 50 subzones. In some embodiments, the plurality of subzones include at least 150 subzones.

[0046] As illustrated, device 300 includes components 210, 212, 214, 220, 230, 240, 244a-c, 245, 250, 252, 260-1 to 260-3 and 270, similar to components 210, 220, 230, 232, 240, 242, 244a-c, 245, 250, 252, 260-1 to 260-3 and 270 described above with reference to Figure 2. In contrast to device 200, instead of the bonding layer 235 of device 200 in Figure 2, device 300 includes a bonding layer 310 positioned between the second plate 220 and the third plate 240. In some embodiments, the bonding layer 310 includes a conductive material (e.g., a metallic bonding). For example, the bonding layer 310 may include a metallic material. The conductive material can be selected to have a coefficient of thermal expansion (CTE) approximately equal to that of the second and third dielectric materials. In some embodiments, the conductive material includes aluminum (Al). For example, the bonding layer 310 may be an aluminum bonding, an AlSi alloy bonding, or another suitable metal bonding. The bonding layer 310 may have an RF connection 320 using vias 322. The vias 322 may be holes drilled in the third plate 240 and filled with a conductive material (e.g., metal). The vias 322 may be RF components that enable the transmission of RF signals to the metal bonding 310.

[0047] Figure 4 is a cross-sectional view of a substrate support device ("device") 400 according to several embodiments. The device 400 may be part of a substrate support assembly used in a processing chamber for substrate processing (e.g., deposition, etching, and / or lithography). In some embodiments, the device 400 is an ESC. In some embodiments, the device 400 is a heater. In some embodiments, the device 400 is a multi-zone ESC for temperature control. In some embodiments, the device 400 includes a plurality of temperature zones ("zones"). For example, the device 400 may include at least four zones. In some embodiments, the device 400 includes a plurality of subzones contained within each zone. In some embodiments, the plurality of subzones include at least 50 subzones. In some embodiments, the plurality of subzones include at least 150 subzones.

[0048] As shown in the figure, the device 400 includes a first plate 410 into which an electrode set 412 is embedded. Additionally, a set of gas distribution channels 414 can be formed within the first plate 410. For example, the set of gas distribution channels 414 can be formed by drilling (e.g., laser drilling) holes in the first plate 410. In some embodiments, the first plate 410 is an ESC plate, and the set of electrodes 412 includes a set of chucking electrodes that allow the substrate to be securely held in place on the first plate 410 during substrate processing. In some embodiments, the set of electrodes 412 includes AEC electrodes to improve performance during substrate processing and prevent arc discharge and damage. For example, if the voltage applied to the chucking electrodes is too high, the AEC electrodes can dissipate the excess voltage, preventing arc discharge and damage to the substrate. In some embodiments, the first plate 410 has a circular shape when viewed from the top surface of the first plate 410 in order to secure a circular substrate. In some embodiments, the first plate 410 has a rectangular shape when viewed from the top surface of the first plate 410 in order to fix a rectangular substrate. The first plate 410 is formed from a first dielectric material. In some embodiments, the first dielectric material is a ceramic material. For example, the first dielectric material may include AlN. As another example, the first dielectric material may include Al2O3. In some embodiments, the thickness of the first plate 410 is in the range of about 0.5 mm to about 10 mm. In some embodiments, the thickness of the first plate 410 is in the range of about 1 mm to about 5 mm.

[0049] As further illustrated, the bonding layer 420 is positioned between the first plate 410 and the second plate 430. The second plate 430 is formed from either the first dielectric material or the second dielectric material. In some embodiments, the second dielectric material is a ceramic material. For example, the second dielectric material may include AlN. As another example, the second dielectric material may include Al2O3. In some embodiments, the thickness of the second plate 430 is in the range of approximately 0.5 mm to approximately 10 mm. In some embodiments, the thickness of the second plate 430 is in the range of approximately 2 mm to approximately 6 mm.

[0050] In some embodiments, the bonding layer 420 includes an inorganic dielectric material. The inorganic dielectric material can be selected to have a coefficient of thermal expansion (CTE) that is approximately equal to that of the first and second dielectric materials. In some embodiments, the inorganic dielectric material includes a glass material. For example, the glass material may include at least one of Si, Ba, Ca, Y, Mg, O, B, etc. In some embodiments, the first inorganic dielectric material includes other ceramic materials, including at least one of Al, Ca, Si, O, N, Y, Mg, F, B, etc. In some embodiments, the inorganic dielectric material includes one or more components that are different from at least one of the first and second materials of the first plate 410 and the second plate 430.

[0051] The second plate 430 may be a heating plate that enables heating of a substrate fixed to the device 400. In some embodiments, the second plate 430 is a heating plate into which a set of heating electrodes 432 are embedded. For example, the second plate 430 may be a primary heating plate that enables primary heating (e.g., coarse temperature control) across multiple zones of the device 400. In some embodiments, the device 400 includes four zones. As another example, the second plate 430 may be a secondary heating plate that enables secondary heating (e.g., fine temperature control) across multiple subzones of the device 400. In some embodiments, the multiple subzones include at least 50 subzones. In some embodiments, the multiple subzones include at least 150 subzones.

[0052] As further illustrated, the bonding layer 435 is positioned between the second plate 430 and the third plate 440. The third plate 440 is a cooling plate and may not be part of the substrate support 400. The third plate 440 may be a cooling plate with a plurality of embedded cooling channels, including cooling channels 442. The cooling channels, including cooling channels 442, are paths that allow a cooling fluid (e.g., water) to flow through the device 400 without interfering with the device 400's ability to firmly hold the wafer in place during processing of the substrate (e.g., wafer). The third plate 440 can maintain the temperature of the device 400 and the substrate supported by the device 400 within a safe range, preventing damage to the device 400, the substrate, and / or the rest of the processing chamber. The design and configuration of the cooling channels can accommodate various variables such as the structure of the device 400 and / or the manufacturing process used for substrate processing. In some embodiments, the third plate 440 is formed from a first dielectric material, a second dielectric material, or a third dielectric material. In some embodiments, the third dielectric material is a ceramic material. For example, the third dielectric material may include AlN. As another example, the third dielectric material may include Al2O3. In some embodiments, the third plate 440 is formed from aluminum or another metal having high thermal conductivity. In some embodiments, the thickness of the third plate 440 is in the range of about 0.5 mm to about 10 mm. In some embodiments, the thickness of the fourth plate 250 is in the range of about 2 mm to about 6 mm.

[0053] In some embodiments, the bonding layer 435 includes an organic material (i.e., an organic bond). Examples of organic materials include epoxy resins, acrylic adhesives, cyanoacrylate adhesives, phenolic resins, etc. In some embodiments, the bonding layer 435 includes a conductive material (e.g., a metallic material). For example, the bonding layer 435 may be an aluminum bond, an AlSi alloy bond, or another suitable metallic bond. In some embodiments, the bonding layer 435 includes an inorganic material (i.e., an inorganic bond). In some embodiments, the bonding layer 435 includes a dielectric material (e.g., an organic or inorganic dielectric bond). The third inorganic dielectric material can be selected to have a CTE approximately equal to that of the third and fourth dielectric materials. In some embodiments, instead of using a bonding layer 435, the second plate 430 is fixed to the third plate 440 via another fastening mechanism. The fastening mechanism may include a set of fasteners. For example, the second plate 430 can be bolted to the fourth plate 440.

[0054] In some embodiments, at least one sealing structure can be placed between at least one pair of plates to provide insulation, sealing, and / or isolation. For example, a sealing structure 434a is placed between the second plate 430 and the fourth plate 440. In some embodiments, the sealing structure is a washer. In some embodiments, the sealing structure is an O-ring or a gasket. In this example, a sealing structure 434b is placed between the first plate 410 and the second plate 430. In some embodiments, no sealing structure is placed between the first plate 410 and the second plate 430.

[0055] Device 400 may include various contacts that enable electrical connections to each set of electrodes of device 400. As shown, the contacts may include contacts 450-1 and 450-2 coupled to each set of electrodes 412, 432. For example, contact 450-1 may be a chucking contact that can be used to apply a voltage to a set of electrodes 212 that can generate an electrostatic force to fix the substrate to the first plate 410. Contact 450-1 may be a high-voltage contact and may be placed within an insulating sleeve 452 (e.g., a ceramic tube) that can isolate the high-voltage contact from the external environment. As another example, contact 450-2 may be a first heater contact that can be used to apply a voltage to a first set of heating electrodes 432 to control the heating of device 400.

[0056] Furthermore, the device 400 may include a plug 460 positioned in a region formed within the second plate 230 and / or the third plate 240. The device 400 is mounted on the third plate 440, and the plug 460 is sealed between the first plate 410 and the third plate 440. The plug 460 can be used to reduce plasma formation and / or arc discharge and prevent damage to the device 400 and / or the substrate. In some embodiments, the plug 460 is a porous plug. The plug 460 can include any suitable material. For example, the plug 460 can include a porous dielectric material. Examples of porous dielectric materials include porous ceramic materials such as porous AlN or Al2O3. The porosity of the plug 460 can be selected to allow a heat conduction fluid to flow through the ceramic plug and reach the substrate support surface via the gas distribution channel 414, while suppressing plasma formation and / or arc discharge. In some embodiments, the porosity of the plug 460 is in the range of approximately 30% to approximately 60%. The plug 460 can be joined to the first plate 410 and the third plate 440 using any suitable joining method. For example, the plug 460 can be joined to at least one of the first plate 410, the second plate 420 and / or the third plate 430 using high-temperature bonding (e.g., high-temperature glue).

[0057] In some embodiments, a set of fasteners and / or threaded inserts is embedded within at least one plate (not shown). For example, a set of fasteners can be embedded within at least plate 420 and / or plate 430. In some embodiments, a set of fasteners (e.g., threaded fasteners) and / or threaded inserts is embedded within a feature of plate 420. Plate 430 includes holes that provide access to the threaded inserts or allow the threaded shafts of the threaded fasteners to protrude from the bottom of device 400 (e.g., to allow device 400 to be fixed to a third plate 440). The set of fasteners and / or threaded inserts may include fasteners formed from a material having a sufficiently low coefficient of thermal expansion and / or a sufficiently high thermal conductivity. In some embodiments, the set of fasteners and / or threaded inserts is a set of molydenum (Mo) fasteners and / or threaded inserts. An example of the use of threaded inserts and fasteners is shown in Figure 5. Details of the manufacturing device 400 are described later with reference to Figure 6.

[0058] Figure 5 is a side cross-sectional view of one embodiment of a substrate support assembly 500 according to several embodiments. The substrate support assembly 500 includes a pack 566. The pack 566 consists of an upper pack plate 530 and a lower pack plate 532, which are joined by a joint 550. Each of the upper pack plate 530 and the lower pack plate 532 may include a dielectric material (e.g., a ceramic material). The lower pack plate 532 and the upper pack plate 532 may be made of the same material. In some embodiments, the lower pack plate 532 is made of a different material than the material used for the upper pack plate 530. In some embodiments, the lower pack plate 532 is made of a metal matrix composite material. In some embodiments, the metal matrix composite material includes aluminum and silicon. In some embodiments, the metal matrix composite material is a SiC porous body impregnated with an AlSi alloy. In some embodiments, the upper pack plate 530 and the lower pack plate 532 include an aluminum material (e.g., AlN or Al2O3).

[0059] The O-ring 545 can be made of a plasma-resistant material. For example, the O-ring 545 may include perfluoropolymer (PFP). The O-ring 545 may include PFP with inorganic additives such as SiC added. The O-ring 545 is replaceable. If the O-ring 545 deteriorates, it can be removed and a new O-ring can be placed on the upper pack plate 530 and positioned around the pack 566 at the interface between the upper pack plate 530 and the lower pack plate 532. The O-ring 545 can protect the joint 550 from plasma erosion.

[0060] The upper pack plate 530 includes a mesa 511, a channel 512, and an outer ring 516. The upper pack plate 530 also includes a clamp electrode 580 and one or more heating elements 576. The clamp electrode 580 is coupled to a chucking power supply 582 and to an RF plasma power supply 584 and an RF bias power supply 586 via a matching circuit 588. Furthermore, the upper pack plate 530 and the lower pack plate 532 may include gas supply holes (not shown) through which a gas supply source 540 delivers a back gas such as helium (He).

[0061] The thickness of the upper pack plate 530 may be approximately 3 to 25 mm. In some embodiments, the thickness of the upper pack plate 530 is approximately 3 mm. The clamp electrode 580 can be positioned approximately 1 mm from the top surface of the upper pack plate 530, and the heating element 576 can be positioned approximately 1 mm below the clamp electrode 580. The heating element 576 may be a screen-printed heating element with a thickness of approximately 10 to 200 microns. Alternatively, in some embodiments, the heating element 576 may be a resistance coil using an upper pack plate 530 with a thickness of approximately 1 to 3 mm. In such embodiments, the minimum thickness of the upper pack plate 530 may be approximately 5 mm. In some embodiments, the thickness of the lower pack plate 532 is approximately 8 to 25 mm.

[0062] A heating element 576 is electrically connected to a heater power supply 578 and heats the upper pack plate 530. The lower pack plate 532 is joined to and thermally communicates with a cooling plate 564. The cooling plate 564 has one or more cooling channels 570 (e.g., conduits) that are in fluid communication with a fluid source 572. In some embodiments, the cooling plate 564 is joined to the pack 566 by a plurality of fasteners 505. The fasteners 505 may be threaded fasteners (e.g., a nut and bolt pair). As shown, the lower pack plate 532 includes a plurality of features 534 for accommodating the fasteners 505. Similarly, the cooling plate 564 also includes a plurality of features 535 for accommodating the fasteners 505. In some embodiments, the features are bolt holes with countersunk holes. As shown, the feature 534 is a through-feature that penetrates the lower pack plate 532. Alternatively, the feature 534 does not have to be a through-feature. In some embodiments, feature 534 is a slot that accommodates a T-shaped bolt head or a rectangular nut that can be inserted into the slot and rotated 90 degrees. In one embodiment, the fastener includes a washer, flexible graphite, aluminum foil, or other load-distributing material that evenly distributes the force from the fastener head throughout the mechanism.

[0063] In one embodiment (as shown in the figure), the O-ring 510 is cured (or otherwise positioned) around the cooling plate 564. Alternatively, the O-ring 510 may be cured at the bottom surface of the lower pack plate 532. The O-ring 510 can be compressed by tightening the fasteners 505. By tightening each fastener 505 with approximately the same force, the separation 515 between the pack 566 and the cooling plate 564 can be made approximately the same (uniform) across the entire interface between the pack 566 and the cooling plate 564. This ensures that the thermal conductivity between the cooling plate 564 and the pack 566 is uniform. In one embodiment, the separation 515 is about 2 to 10 mils. For example, if the O-ring 510 is used without a flexible graphite layer, the separation 515 may be 2 to 10 mils. If a flexible graphite layer is used in addition to the O-ring 510, the separation can be about 10 to 40 mils. If the separation is large, thermal conductivity decreases, and the interface between the pack 566 and the cooling plate 564 may act as a thermal choke. In some embodiments, a conductive gas can be introduced into the separation section 515 to improve thermal conductivity between the pack 566 and the cooling plate 564.

[0064] The separation section 515 minimizes the contact area between the pack 566 and the cooling plate 564. Furthermore, by maintaining thermal isolation between the pack 566 and the cooling plate 564, the pack 566 can be kept at a much higher temperature than the cooling plate 564. For example, in some embodiments, the pack 566 can be heated to 180-300°C while the temperature of the cooling plate 564 can be kept below approximately 120°C. The pack 566 and the cooling plate 564 can expand or contract independently during the thermal cycle.

[0065] The separation section 515 can function as a thermal choke by restricting the heat conduction path from the pack 566 (e.g., the heating pack) to the cooling plate 564 (e.g., the cooling plate). In a vacuum environment, heat conduction may be primarily a radiative process unless there is a conductive medium. Since the pack 566 can be placed in a vacuum environment during substrate processing, heat conduction through the separation section 515 of the heat generated by the heating element 576 may be less efficient. Therefore, the heat flux flowing from the pack 566 to the cooling plate 564 can be controlled by adjusting the separation section 515 and / or other factors affecting heat conduction. To efficiently heat the substrate, it is desirable to limit the amount of heat conducted from the upper pack plate 530.

[0066] In some embodiments (not shown), a flexible graphite layer is placed between the pack 566 and the cooling plate 564 within the periphery of the O-ring 510. The thickness of the flexible graphite layer is approximately 10 to 40 mils. The flexible graphite layer and the O-ring 510 can be compressed by tightening the fastener 505. The flexible graphite layer has thermal conductivity and can improve heat conduction between the pack 566 and the cooling plate 564.

[0067] In some embodiments (not shown), the cooling plate 564 includes a base portion on which the O-ring 510 can be cured. Furthermore, the cooling plate 564 may include a spring-loaded internal heatsink connected to the base portion by one or more springs. The springs can apply a force that presses the internal heatsink against the pack 566. The surface of the heatsink may have a predetermined roughness and / or surface features (e.g., mesa) that control the thermal conductivity between the pack 566 and the heatsink. Furthermore, the material of the heatsink may also affect the thermal conductivity. For example, an aluminum heatsink has better thermal conductivity than a stainless steel heatsink. In one embodiment, the heatsink includes a flexible graphite layer on the upper surface of the heatsink.

[0068] Figure 6 is a flowchart illustrating an example of a method 600 for manufacturing a substrate support assembly using an inorganic dielectric junction. For example, method 600 can be performed to manufacture a device that can be incorporated into a substrate support assembly in a processing chamber for processing a substrate. In some embodiments, method 600 can be used to form device 200 in Figure 2 or device 300 in Figure 3.

[0069] In block 610, multiple plates are obtained, and in block 620, a substrate support is formed using the multiple plates. The multiple plates include at least a first plate and a second plate. Obtaining multiple plates may include manufacturing at least one of the multiple plates. The substrate support may be a component of a substrate support assembly in a process chamber for supporting a substrate during processing. In some embodiments, the substrate support is an ESC. In some embodiments, the substrate support is a heater. Each of the multiple plates may be formed from a dielectric material. In some embodiments, each of the multiple plates may be formed from a ceramic material. For example, each of the multiple plates may be formed from at least one of AlN, Al2O3, etc.

[0070] The first plate can receive a substrate. The first plate has a first set of electrodes embedded in it, and the second plate has a second set of electrodes embedded in it. In some embodiments, obtaining the first plate includes embedding the first set of electrodes in the first plate. In some embodiments, obtaining the second plate includes embedding the second set of electrodes in the second plate. In some embodiments, the first plate has a circular shape when viewed from above in order to receive a circular substrate. In some embodiments, the first plate has a rectangular shape when viewed from above in order to accommodate a rectangular substrate. The first plate can receive a substrate and firmly hold the substrate during processing. In some embodiments, the thickness of the first plate can be in the range of about 0.5 mm to about 10 mm. In some embodiments, the thickness of the first plate can be in the range of about 1 mm to about 5 mm. In some embodiments, the thickness of the second plate can be in the range of about 0.5 mm to about 10 mm. In some embodiments, the thickness of the second plate is in the range of about 2 mm to about 6 mm.

[0071] In some embodiments, the first plate is an ESC plate. For example, the first set of electrodes may include a chucking electrode set for firmly holding the substrate using the electrostatic force generated by the first set of electrodes. Furthermore, in some embodiments, the first set of electrodes includes AEC electrodes. In some embodiments, the second plate is a heating plate. For example, the second set of electrodes may include a heating electrode set for controlling the temperature during substrate processing. In some embodiments, the second plate is a primary heating plate including a primary heating electrode set for enabling primary heating (e.g., coarse temperature control) across multiple zones of the device. In some embodiments, the device includes four zones. In some embodiments, the second plate is a secondary heating plate including a secondary heating electrode set for enabling secondary heating (e.g., fine temperature control) across multiple subzones of the device. In some embodiments, the multiple subzones include at least 50 subzones. In some embodiments, the multiple subzones include at least 150 subzones.

[0072] In some embodiments, the first plate is a first heating plate, and the second plate is a second heating plate. For example, the first set of electrodes may include a first set of heating electrodes for controlling the temperature during substrate processing, and the second set of electrodes may include a second set of heating electrodes for controlling the temperature during substrate processing. For example, one of the first or second plate may be the main heating plate and the other the secondary heating plate.

[0073] Furthermore, in some embodiments, the plurality of plates include a third plate. The third plate can be formed from a third dielectric material. In some embodiments, the third dielectric material is a ceramic material. In some embodiments, the thickness of the third plate is in the range of approximately 0.5 mm to approximately 10 mm. In some embodiments, the thickness of the third plate is in the range of approximately 2 mm to approximately 6 mm. In some embodiments, the first plate is an ESC plate, the second plate is a first heating plate, and the third plate is a second heating plate. For example, one of the second or third plate can be used as the main heating plate, and the other of the second or third plate can be used as the secondary heating plate.

[0074] In block 630, the substrate support is attached to the base structure. In some embodiments, the substrate support is attached to a cooling plate of the base structure, and a set of cooling channels is embedded in the cooling plate. In some embodiments, the step of attaching the substrate support to the base structure includes bonding a second or third plate to the base structure. For example, the second or third plate can be bonded to the base structure using an organic bond containing an organic material. As another example, the second or third plate can be bonded to the base structure using a conductive bond containing a conductive material (e.g., a metallic material). As yet another example, the second or third plate can be bonded to the base structure using an inorganic bond containing an inorganic material. In some embodiments, the bond between the second or third plate and the base structure includes a dielectric material (e.g., an organic or inorganic dielectric bond). The bonding material between the second and third plates can be selected to have a coefficient of thermal expansion (CTE) that is approximately equal to the coefficients of thermal expansion (CTE) of the material of the second plate and the material of the base structure. Furthermore, in some embodiments, joining the second or third plate to the base structure includes forming a sealing structure (e.g., a washer or O-ring) between the second or third plate and the base structure to provide insulation.

[0075] In block 640, the manufacturing of the substrate support assembly is completed. Furthermore, the step of completing the manufacturing of the substrate support assembly may include the step of forming a contact set, where each contact of the contact set is formed on each of the electrode sets. For example, the contact set may include a chucking contact and a heater contact. In some embodiments, the second set of electrodes includes a set of primary heating electrodes, and the heater contact is a primary heater contact coupled to the set of primary heating electrodes. In some embodiments, the second set of electrodes includes a set of secondary heating electrodes, and the heater contact is a secondary heater contact coupled to the set of secondary heating electrodes.

[0076] Figure 7 is a flowchart illustrating an example of method 620 for forming a substrate support using multiple plates. For example, method 620 can be performed to manufacture a device that can be incorporated into a substrate support assembly in a processing chamber for processing a substrate. In some embodiments, method 620 can be used to manufacture device 200 in Figure 2 or device 300 in Figure 3.

[0077] In block 710, a first plate of a plurality of plates is obtained, and in block 720, the first plate is joined to at least one second plate of the plurality of plates. For example, the first plate may be similar to the first plate described above with reference to Figure 6, and the second plate may be similar to the second plate described above with reference to Figure 6. In some embodiments, obtaining the first plate includes forming the first plate. For example, forming the first plate may include embedding a first set of electrodes within the first plate, as described above with reference to Figure 6.

[0078] More specifically, joining a first plate to a second plate may include joining the first plate to the second plate by forming a first inorganic dielectric junction comprising an inorganic dielectric material. The inorganic dielectric material can be selected to have a coefficient of thermal expansion (CTE) approximately equal to that of the first and second dielectric materials. In some embodiments, the inorganic dielectric material includes a glass material. For example, the glass material may include at least one of Si, Ba, Ca, Y, Mg, O, B, etc. In some embodiments, the inorganic dielectric material may include other ceramic materials, including at least one of Al, Ca, Si, O, N, Y, Mg, F, B, etc. In some embodiments, joining a first plate to a second plate may further include forming a sealing structure between the first and second plates to provide insulation. For example, the sealing structure may be a washer. As another example, the sealing structure may include an O-ring or a gasket.

[0079] In some embodiments, bonding at least a first plate to a second plate further includes bonding the second plate to a third plate of a plurality of plates. For example, bonding a first plate to a second plate may include bonding the second plate to a third plate by forming a second inorganic dielectric junction comprising an inorganic dielectric material (which may be the same as or different from the first inorganic dielectric junction). As another example, the second plate may be bonded to a third plate using a conductive junction (e.g., a metallic junction). In some embodiments, bonding a second plate to a third plate further includes forming a sealing structure (e.g., a washer or O-ring) to provide insulation between the second and third plates. As yet another example, the second plate may be bonded to a third plate using an organic junction. In some embodiments, the first plate is bonded to a second plate, and the second plate is bonded to a third plate simultaneously. In some embodiments, the first plate is bonded to a second plate, and the second plate is bonded to a third plate in succession.

[0080] In block 730, a contact structure is formed that contacts the electrodes of the first plate. More specifically, the contact structure can be formed to contact the electrodes of the first plate. In some embodiments, the contact structure includes a high-voltage (HV) contact. In some embodiments, the formation of the contact structure includes forming a hole that exposes the first plate and forming the contact structure within the hole. For example, forming the hole may include drilling a hole in at least the second plate. In some embodiments, the formation of the contact structure includes brazing the contact structure.

[0081] In block 740, a set of gas distribution channels is formed in the first plate. For example, the step of forming a set of gas distribution channels in the first plate may include drilling holes through the first plate (e.g., laser drilling). In some embodiments, the set of gas distribution channels may be formed in step 710 (e.g., before joining the first plate to the second plate).

[0082] In block 750, a porous plug is formed that contacts the first plate. The formation of the porous plug in contact with the first plate may include forming a cavity that exposes the first plate and fixing the porous plug within the cavity. More specifically, the cavity may expose a set of gas distribution channels. In some embodiments, the porous plug is bonded to the surface of the first plate, the set of gas distribution channels, and the sidewalls of the cavity. The porous plug can be used to reduce plasma formation and / or arc discharge, preventing damage to the device and / or substrate. The porosity of the plug can be selected to allow heat transfer fluid to reach the substrate support surface while suppressing plasma formation. The porous plug may include any suitable material. For example, the porous plug may include a porous dielectric material. The plug can be bonded using any suitable bonding method. For example, the plug may be bonded using high-temperature bonding (e.g., high-temperature glue).

[0083] After forming the porous plug, the substrate support can be attached to a base structure (e.g., a cooling plate). For example, the base structure may have holes of approximately the same thickness as the holes formed when forming the contact structure that contacts the electrodes of the first plate. In some embodiments, the formation of the contact structure includes forming holes that penetrate the base structure and at least the second plate. Details relating to blocks 710-750 have been described above with reference to Figures 1-6.

[0084] The above description includes numerous specific details, such as examples of specific systems, components, and methods, to help understand some embodiments of the present invention. However, it will be obvious to those skilled in the art that at least some embodiments of the present invention can be implemented without these specific details. In other examples, to avoid unnecessarily obscuring the invention, well-known components or methods are not described in detail or are presented in the form of simple block diagrams. Accordingly, the specific details described are merely illustrative. A particular embodiment may differ from these exemplary details and is still considered to fall within the scope of the present invention.

[0085] Throughout this specification, the expression “one embodiment” or “embodiment” means that a particular feature, structure, or characteristic described in relation to an embodiment is included in at least one embodiment. Therefore, when the expression “one embodiment” or “embodiment” is used in various places throughout this specification, it does not necessarily mean the same embodiment. Also, the term “or” means inclusive “or” rather than exclusive “or”. When the terms “about” or “approximately” are used in this specification, it means that the nominal value presented is accurate to within 25 percent.

[0086] The operations of the methods described herein are shown and described in a specific order, but the order of operations of each method is changeable, certain operations can be performed in reverse order, and certain operations can be performed at least partially concurrently with other operations. In other embodiments, the instructions or sub-operations of different operations may be performed intermittently and / or alternately.

[0087] The above description is intended to be illustrative and not limiting. Those skilled in the art will see many other embodiments by reading and understanding the above description. Therefore, the scope of the present invention should be determined by reference to the entire scope of the appended claims and equivalents to which the claims are covered.

Claims

1. A substrate support assembly comprising a substrate support, wherein the substrate support is A first plate comprising a first dielectric material and having a first set of electrodes embedded in it, A second plate comprising a first dielectric material or a second dielectric material, in which a second set of electrodes is embedded, A substrate support assembly positioned between a first plate and a second plate, comprising an inorganic dielectric junction containing an inorganic dielectric material.

2. The substrate support assembly according to claim 1, wherein at least one of the first dielectric material or the second dielectric material is a ceramic material.

3. The substrate support assembly according to claim 1, wherein the first plate is an electrostatic chuck (ESC) plate, the first set of electrodes includes a set of chucking electrodes, and the second plate is a heating plate including a set of heating electrodes.

4. The substrate support is A third plate including a second set of heating electrodes, The substrate support assembly according to claim 3, comprising a joint positioned between a second plate and a third plate.

5. The substrate support assembly according to claim 4, wherein the joint is a second inorganic dielectric joint containing a second inorganic dielectric material.

6. The substrate support assembly according to claim 1, wherein the first plate is a first heating plate, the first set of electrodes includes a first set of heating electrodes, and the second plate is a second heating plate, the second set of electrodes includes a second set of heating electrodes.

7. The first plate is a primary heating plate equipped with a set of primary heating electrodes that enable primary heating across multiple zones, or a secondary heating plate equipped with a set of secondary heating electrodes that enable secondary heating across multiple subzones. The substrate support assembly according to claim 6, wherein the second plate is a secondary heating plate or a primary heating plate.

8. The substrate support assembly according to claim 1, wherein the inorganic dielectric material is different from the first dielectric material and the second dielectric material.

9. The substrate support assembly according to claim 1, wherein the inorganic dielectric material includes a ceramic or glass containing at least one of Al, Si, Ba, Ca, Y, Mg, F, N, O, or B.

10. The substrate support assembly according to claim 1, comprising a cooling plate bonded to a substrate support, wherein the cooling plate comprises a set of cooling channels.

11. A substrate support assembly according to claim 1, comprising a shaft bonded to a substrate support.

12. A processing chamber, A substrate support assembly comprising a substrate support bonded to a cooling plate including a set of cooling channels, wherein the substrate support is A first plate comprising a first dielectric material and having a first set of electrodes embedded in it, A second plate comprising a first dielectric material or a second dielectric material, in which a second set of electrodes is embedded, A processing chamber positioned between a first plate and a second plate, and equipped with an inorganic dielectric junction containing an inorganic dielectric material.

13. The processing chamber according to claim 12, wherein the first plate is an electrostatic chuck (ESC) plate, the first set of electrodes includes a set of chucking electrodes, and the second plate is a heating plate.

14. The substrate support is A third plate including a second set of heating electrodes, The processing chamber according to claim 13, comprising a second inorganic dielectric junction disposed between a second plate and a third plate and containing a second inorganic dielectric material.

15. The processing chamber according to claim 12, wherein the first plate is a first heating plate, the first set of electrodes includes a first set of heating electrodes, the second plate is a second heating plate, and the second set of electrodes includes a second set of heating electrodes.

16. The first plate is a primary heating plate equipped with a set of primary heating electrodes that enable primary heating across multiple zones, or a secondary heating plate equipped with a set of secondary heating electrodes that enable secondary heating across multiple subzones. The processing chamber according to claim 14, wherein the second plate is a secondary heating plate or a primary heating plate.

17. The processing chamber according to claim 12, wherein the inorganic dielectric material includes a ceramic or glass containing at least one of Al, Si, Ba, Ca, Y, Mg, F, N, O, or B.

18. The processing chamber according to claim 12, comprising a cooling plate bonded to a substrate support, wherein the cooling plate comprises a set of cooling channels.

19. The processing chamber according to claim 12, comprising a shaft bonded to a substrate support.

20. A step of forming a substrate support for a substrate support assembly, comprising: joining a first plate to a second plate using an inorganic dielectric junction including an inorganic dielectric material disposed between a first plate and a second plate, wherein the first plate includes a first dielectric material in which a first set of electrodes is embedded, and the second plate includes the first dielectric material or the second dielectric material in which a second set of electrodes is embedded; A method comprising the step of attaching a substrate support to a base structure including a cooling plate having a set of cooling channels.

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