System for detecting plasma characteristics in a reaction chamber, detection method, and storage medium

Abstract

The present invention provides a system for detecting plasma characteristics in a reaction chamber, a semiconductor device processing apparatus, a method for detecting plasma characteristics in a reaction chamber, and a computer-readable storage medium. The detection system comprises at least two sampling paths that each collect voltage signals from the top cover of the reaction chamber; a voltage processing module connected to the second sampling path that acquires a second voltage signal by shifting the voltage signal by 180° phase and adding the second voltage signal to the first voltage signal on the first sampling path in its original phase to acquire a third voltage signal from which AC noise has been filtered; and a detection module connected to the voltage processing module that acquires the third voltage signal and determines the plasma characteristics in the reaction chamber based on the third voltage signal. The present invention can filter AC noise in the voltage of the top cover of the reaction chamber and can improve the accuracy of the plasma characteristic detection results.

Description

Technical Field

[0001] Technical field The present invention relates to the technical field of semiconductor processing, and particularly to a detection system for plasma characteristics in a reaction chamber, a processing device for semiconductor devices, a method for detecting plasma characteristics in a reaction chamber, and a computer-readable storage medium.

Background Art

[0002] Background technology In a thin film deposition process, an RF (Radio Frequency) electrode is used to generate a high-frequency electric field and supply energy to excite plasma. In order to avoid the generation of particle deposition and improve the productivity of the thin film deposition process, in this field, it is common to adopt the top cover of the reaction chamber as the RF electrode and provide an AC-driven electric heating wire inside it to promote the thin film deposition reaction. However, the direct contact between the metal armor on the surface of the heating wire and the top cover generates an AC signal coupling on the surface of the top cover of the reaction chamber, so a certain amount of AC noise is included in the DC bias voltage signal collected by the reaction chamber top cover, which seriously affects the accuracy of detecting plasma characteristics in the reaction chamber by voltage detection.

[0003] In order to overcome the above-mentioned drawbacks existing in the prior art, in this field, there is a strong demand for an improved detection system for plasma characteristics in a reaction chamber that improves the accuracy of the detection result of plasma characteristics by filtering the AC noise in the voltage of the top cover of the reaction chamber.

Summary of the Invention

Means for Solving the Problems

[0004] Content of the invention The following provides a brief overview of one or more embodiments to offer a basic understanding of those embodiments. This overview is not a detailed overview of all assumed embodiments, nor is it intended to identify the important or definitive elements of all embodiments, nor to define the scope of any or all embodiments. Its sole purpose is to provide a simplified version of some concepts of one or more embodiments as an introduction before a more detailed explanation follows.

[0005] To overcome the aforementioned drawbacks of the prior art, the present invention provides a plasma characteristics detection system in a reaction chamber, a semiconductor device processing apparatus, a method for detecting plasma characteristics in a reaction chamber, and a computer-readable storage medium, which can effectively filter AC noise in the voltage of the top cover of the reaction chamber and improve the accuracy of the plasma characteristics detection results.

[0006] Specifically, the plasma characteristics detection system in the reaction chamber according to the first aspect of the present invention comprises at least two sampling paths, a voltage processing module, and a detection module. The at least two sampling paths are used to collect voltage signals from the top cover of the reaction chamber, respectively. The top cover functions as an RF electrode for exciting plasma in the reaction chamber and is in contact with an AC-driven heating wire. The voltage processing module is connected to the second sampling path and obtains a second voltage signal by shifting its voltage signal by 180° phase, and also adds the second voltage signal to the first voltage signal on the first sampling path in its original phase to obtain a third voltage signal from which AC noise has been filtered. The detection module is connected to the voltage processing module and obtains the third voltage signal and determines the plasma characteristics in the reaction chamber based on the third voltage signal.

[0007] Furthermore, in some embodiments of the present invention, the voltage processing module comprises an odd number of inverter circuits that phase-shift the voltage signal on the second sampling path by 180° to obtain the second voltage signal. Alternatively, the voltage processing module comprises a plurality of phase-shift circuits. The plurality of phase-shift circuits stepwise change the phase of the voltage signal on the second sampling path and phase-shift the voltage signal on the second sampling path by 180° to obtain the second voltage signal.

[0008] Furthermore, in some embodiments of the present invention, the voltage processing module comprises two phase shift circuits. Each of the two phase shift circuits shifts the voltage signal on the second sampling path by 90° to obtain the second voltage signal.

[0009] Furthermore, in some embodiments of the present invention, the voltage processing module further comprises a signal superposition circuit. The first input terminal of the signal superposition circuit is connected to the output terminal of the first sampling path to acquire the first voltage signal of the original phase. The second input terminal of the signal superposition circuit is connected to the output terminal of the inverter circuit or the plurality of phase shift circuits to acquire the second voltage signal. The output terminal of the signal superposition circuit is connected to the detection module to output a third voltage signal from which the AC noise has been filtered.

[0010] Furthermore, in some embodiments of the present invention, the voltage processing module further comprises a voltage reduction circuit. The output terminal of the signal superposition circuit is connected to the detection module via the voltage reduction circuit. The voltage reduction circuit reduces the amplitude of the third voltage signal by half to obtain a fourth voltage signal representing the DC voltage on the top cover, and transmits the fourth voltage signal to the detection module. The detection module determines the plasma characteristics in the reaction chamber based on the fourth voltage signal.

[0011] Furthermore, in some embodiments of the present invention, the voltage processing module further comprises a first voltage sensor. The input terminal of the first voltage sensor is connected to the output terminal of the voltage processing module. The output terminal of the first voltage sensor is connected to the input terminal of the detection module, which performs analog-to-digital conversion of the third voltage signal and transmits the converted third voltage data to the detection module, thereby determining the plasma characteristics in the reaction chamber based on the voltage data.

[0012] Furthermore, in some embodiments of the present invention, the voltage processing module further comprises a second voltage sensor and a third voltage sensor. The input terminal of the second voltage sensor is connected to the output terminal of the first sampling path. The output terminal of the second voltage sensor is connected to the input terminal of the detection module, which performs analog-to-digital conversion of the first voltage signal and transmits the converted first voltage data to the detection module. The input terminal of the third voltage sensor is connected to the output terminal of the inverter circuit or the plurality of phase shift circuits. The output terminal of the third voltage sensor is connected to the input terminal of the detection module, which performs analog-to-digital conversion of the second voltage signal and transmits the converted second voltage data to the detection module, so that the detection module adds the first voltage data and the second voltage data to determine the corresponding third voltage data and determines the plasma characteristics in the reaction chamber based on the third voltage data.

[0013] Furthermore, the semiconductor device processing apparatus according to a second aspect of the present invention comprises a reaction chamber, a heating wire, and a plasma characteristics detection system and RF drive circuit within the reaction chamber according to a first aspect of the present invention. The reaction chamber includes a top cover. The top cover is used as an RF electrode and is in contact with an AC-driven heating wire. The heating wire is connected to an AC drive circuit and is used to heat the reaction chamber to promote the vapor deposition reaction of semiconductor processing. The detection system acquires a voltage signal filtered of AC noise from the top cover and determines the plasma characteristics within the reaction chamber based on the voltage signal. The RF drive circuit is connected to the top cover and the detection system and, based on the detection result of the plasma characteristics, drives the top cover to excite the plasma within the reaction chamber and promote the vapor deposition reaction of semiconductor processing.

[0014] Furthermore, a third aspect of the present invention relates to a method for detecting plasma characteristics in a reaction chamber, comprising the steps of: collecting voltage signals from the top cover of the reaction chamber via two sampling paths, wherein the top cover functions as an RF electrode for exciting plasma in the reaction chamber; acquiring a second voltage signal by shifting the voltage signal of the second sampling path by 180°; adding the second voltage signal to a first voltage signal on the first sampling path in its original phase to acquire a third voltage signal from which AC noise has been filtered; and determining the plasma characteristics in the reaction chamber based on the third voltage signal.

[0015] Furthermore, the computer-readable storage medium according to the fourth aspect of the present invention stores computer instructions. When the computer instructions are executed by a processor, the semiconductor defect detection method according to the third aspect of the present invention is performed.

[0016] Description of the drawing The above-mentioned features and advantages of the present invention can be better understood by reading the detailed description of the embodiments of this disclosure in conjunction with the following drawings. In the drawings, each component is not necessarily drawn to scale, and components having similar related characteristics or features may be denoted by the same or similar reference numerals. [Brief explanation of the drawing]

[0017] [Figure 1] Figure 1 shows a schematic configuration diagram of a semiconductor device processing apparatus according to several embodiments of the present invention. [Figure 2] Figure 2 shows the circuit topology diagram of a voltage processing module according to several embodiments of the present invention. [Figure 3] Figure 3 shows a schematic flow diagram of a method for detecting plasma characteristics in a reaction chamber according to several embodiments of the present invention. [Figure 4] Figure 4 shows phase graphs at VF1 and VF2 nodes according to several embodiments of the present invention. [Figure 5] Figure 5 shows a circuit topology diagram of a voltage processing module according to several embodiments of the present invention. [Figure 6] Figure 6 shows a schematic diagram of the configuration of a semiconductor device processing apparatus according to several embodiments of the present invention. [Modes for carrying out the invention]

[0018] Specific Embodiments Hereinafter, embodiments of the present invention will be described by specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The description of the present invention is introduced in relation to preferred embodiments, but this does not mean that the features of the present invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in relation to the embodiment is to cover other selections or modifications that can be extended based on the scope of the claims of the present invention. To provide a detailed understanding of the present invention, the following description includes many specific details. The present invention can also be implemented without using these details. Also, in order to avoid confusing or obscuring the gist of the present invention, some specific details are omitted in the description.

[0019] In the description of the present invention, unless specifically defined and limited explicitly, the terms "attachment", "connection", and "coupling" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection. It may be a mechanical connection or an electrical connection. It may be a direct connection, an indirect connection through an intermediate medium, or a communication inside two elements. The specific meaning of the above terms in the present invention can be specifically understood by those skilled in the art.

[0020] Also, the "upper", "lower", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following description should be understood as the orientations shown in this paragraph and the related drawings. These relative terms are used only for the convenience of description and do not mean that the described device needs to be manufactured or operated in a specific orientation, so it should not be construed as limiting the present invention.

[0021] In this specification, terms such as "first", "second", "third", etc. may be used to describe various components, regions, layers, and / or parts, but these components, regions, layers, and / or parts should not be limited by these terms, and it is understood that these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part described below may also be referred to as the second component, region, layer, and / or part without departing from some embodiments of the present invention.

[0022] As described above, when the metal armor on the surface of the heating wire is in direct contact with the top cover, an AC signal coupling occurs on the surface of the top cover of the reaction chamber. Therefore, a certain amount of AC noise is included in the voltage signal collected by the top cover of the reaction chamber, which seriously affects the accuracy of detecting the plasma characteristics in the reaction chamber by voltage detection.

[0023] The present invention provides a plasma characteristic detection system in a reaction chamber, a semiconductor device processing apparatus, a plasma characteristic detection method in a reaction chamber, and a computer-readable storage medium that can effectively filter the AC noise in the voltage of the top cover of the reaction chamber and improve the accuracy of the detection result of plasma characteristics in order to overcome the above-mentioned drawbacks existing in the prior art.

[0024] In some non-limiting embodiments, the method for detecting plasma characteristics in a reaction chamber according to a third aspect of the present invention can be implemented by a system for detecting plasma characteristics in a reaction chamber according to a first aspect of the present invention. Specifically, the detection system is arranged in a semiconductor device processing apparatus according to a second aspect of the present invention and includes a memory and a processor. The memory includes, but is not limited to, the computer-readable storage medium described above which computer instructions according to a fourth aspect of the present invention are stored. When these computer instructions are executed by the processor, the method for detecting plasma characteristics in a reaction chamber according to a third aspect of the present invention is implemented, enabling detection of plasma characteristics in the reaction chamber via the semiconductor device processing apparatus.

[0025] First, referring to Figure 1, Figure 1 shows a schematic diagram of the configuration of a semiconductor device processing apparatus according to several embodiments of the present invention.

[0026] In the embodiment shown in Figure 1, the semiconductor device processing apparatus according to the present invention comprises a reaction chamber, a heating wire 11, a plasma characteristics detection system 12 within the reaction chamber, and an RF drive circuit 13. Here, the reaction chamber is equipped with a top cover 14. This top cover 14 functions as an RF electrode and contacts the AC-driven heating wire 11. This heating wire 11 is connected to an AC drive circuit 15 and is used to heat the reaction chamber to promote the vapor deposition reaction of semiconductor processing. The plasma characteristics detection system 12 within the reaction chamber acquires a voltage signal filtered of AC noise from the top cover 14 and determines the plasma characteristics within the reaction chamber based on the voltage signal. The RF drive circuit 13 is connected to the top cover 14 and the detection system 12 and, based on the plasma characteristics detection result, drives the top cover 14 to excite the plasma in the reaction chamber and promote the vapor deposition reaction of semiconductor processing.

[0027] Furthermore, the plasma characteristics detection system 12 in the reaction chamber according to the present invention comprises at least two sampling paths 121 to 122, a voltage processing module 123, and a detection module 124. The at least two sampling paths 121 to 122 are used to collect voltage signals from the top cover 14 of the reaction chamber, respectively. The voltage processing module 123 is connected to the second sampling path 122 and shifts its voltage signal by 180° to obtain a second voltage signal. The second voltage signal is added to the first voltage signal on the first sampling path 121 in its original phase to obtain a third voltage signal from which AC noise has been filtered. The detection module 124 is connected to the voltage processing module 123 and obtains the third voltage signal, and determines the plasma characteristics in the reaction chamber based on the third voltage signal.

[0028] Specifically, referring to Figure 2, Figure 2 shows a circuit topology diagram of a voltage processing module according to several embodiments of the present invention.

[0029] In the embodiment shown in Figure 2, the voltage processing module 123 may comprise an odd number of inverter circuits 21 (including, but not limited to, 1, 3, or 5), a signal superposition circuit 22, and a voltage reduction circuit 23. The inverter circuit 21 consists of a first signal amplifier ICP1, associated resistors R1, R2, R4, and capacitor C1, and obtains a second voltage signal by shifting the voltage signal on the second sampling path 122 by 180°. The signal superposition circuit 22 consists of a second signal amplifier ICP2 and associated resistors R3, R5, R6, and its first input terminal is connected to the output terminal of the first sampling path 121 to obtain a first voltage signal in its original phase, and its second input terminal is connected to the output terminal of the inverter circuit 21 to obtain an inverted second voltage signal, and it superimposes the first and second voltage signals, outputting a third voltage signal filtered of AC noise to the voltage reduction circuit 23 via its output terminal. The voltage reduction circuit 23 consists of a third signal amplifier ICP3 and its associated resistors R8 and R9. Its input terminal is connected to the output terminal of the signal superposition circuit 22, and its output terminal is connected to the detection module 124 at the rear end. The voltage reduction circuit reduces the amplitude of the acquired third voltage signal by half, acquires a fourth voltage signal representing the DC voltage of the top cover 14, and transmits it to the detection module 124. Based on this fourth voltage signal, the plasma characteristics in the reaction chamber are determined.

[0030] Those skilled in the art will understand that the circuit topology including the voltage reduction circuit 23 shown in Figure 2 is merely a non-limiting embodiment provided by the present invention and does not limit the scope of protection of the present invention, but is intended to clearly illustrate the main concept of the present invention and provide a specific method that facilitates public implementation.

[0031] Furthermore, in some other embodiments, those skilled in the art may similarly achieve the objective of determining the plasma characteristics in the reaction chamber by directly connecting the output terminal of the signal superposition circuit 22 to the rear-end detection module 124 and stepping down or data-converting the acquired third voltage signal.

[0032] Furthermore, in the embodiments shown in Figures 1 and 2, it is preferable that the voltage processing module 123 further comprises a DC bias voltage sensor (DC bias sensor) 125. This voltage sensor 125 has a large equivalent resistance (e.g., R7 = 1 MΩ), its input terminal is connected to the output terminal of the voltage processing module 123, and its output terminal is connected to the input terminal of the detection module 124. It converts the third or fourth voltage signal output from the front end into an analog-to-digital format and transmits the converted voltage data to the detection module 124, thereby determining the plasma characteristics in the reaction chamber based on the voltage data. By filtering AC noise in the voltage of the top cover via the voltage processing module 123 and then transmitting the DC bias voltage signal from which the AC noise has been filtered to the voltage sensor 125, the present invention can effectively avoid interference from AC noise that the voltage sensor 125 receives, improve the safety and operating life of the voltage sensor 125 and the detection module 124 at the rear end, and at the same time improve the accuracy of the plasma characteristic detection results. The operating principles of the semiconductor device processing apparatus and the plasma properties detection system in the reaction chamber described above will be explained below in conjunction with several embodiments of the method for detecting plasma properties in the reaction chamber. Those skilled in the art will understand that these embodiments of the detection method are merely some non-limiting embodiments of the present invention and are intended to clearly illustrate the main concept of the invention and to provide some specific solutions to facilitate public implementation, and are not intended to limit all functions or all modes of operation of the processing apparatus and inspection system. Similarly, this processing apparatus and detection system are also merely some non-limiting embodiments of the present invention and do not constitute a limitation on the performant or execution order of each step in these detection methods.

[0033] Please refer to Figures 1 to 4. Figure 3 shows a schematic flow diagram of a method for detecting plasma characteristics in a reaction chamber according to some embodiments of the present invention. Figure 4 shows a phase graph at nodes VF1 and VF2 according to some embodiments of the present invention.

[0034] As shown in Figures 1 to 3, in the process of detecting the plasma characteristics in the reaction chamber, the detection system first collects the original voltage signals from the top cover 14 of the reaction chamber via two sampling paths 121 and 122, respectively. Then, via an odd number of inverter circuits 21 located in the second sampling path 122, the voltage signals on the second sampling path 122 are phase-shifted by 180° to obtain a second voltage signal VF2 as shown in Figure 4. Subsequently, via the signal superposition circuit 22 shown in Figure 2, the detection system can add this second voltage signal to the first voltage signal VF1 with its original phase as shown in Figure 4 on the first sampling path 121 to obtain a third voltage signal with AC noise removed. More preferably, this third voltage signal can be input to the voltage reduction circuit 23 to obtain a fourth voltage signal with half the amplitude. Subsequently, the detection system can obtain the third or fourth voltage signal output via the rear-end detection module 124 and determine the plasma characteristics in the reaction chamber based on the obtained third or fourth voltage signal.

[0035] Furthermore, in order to verify the filtering effect of AC noise by the plasma characteristics detection system in the reaction chamber described above according to the present invention, circuit simulation and voltage monitoring were performed for each circuit node in the voltage processing module 123 shown in Figure 2.

[0036] Specifically, by applying a DC voltage of -30V to the voltage source VG1 shown in Figure 2, and adding AC noise interference with a frequency of 50Hz and an amplitude of 100V, the actual sine waves measured at the VF1 and VF2 terminals of the voltage processing module 123, which is composed of this inverter circuit 21, have equal amplitude and a phase difference of 179.51°, and an AC noise signal with an amplitude of 300mV is measured at the VF4 terminal.

[0037] To further improve the inversion capability of the voltage processing module 123 and enhance its AC filtering capability, in some embodiments of the present invention, at least one inverter circuit of the voltage processing module 123 may be replaced with a plurality of phase shift circuits. The plurality of phase shift circuits can stepwise change the phase of the voltage signal on the second sampling path 122 described above, and stepwise shift the phase of the original voltage signal on the second sampling path 122 by 180° to obtain a second voltage signal.

[0038] Specifically, referring to Figure 5, Figure 5 shows a circuit topology diagram of a voltage processing module according to several embodiments of the present invention.

[0039] In the embodiment shown in Figure 5, the voltage processing module 123 may include two phase shift circuits 511-512 and a signal superposition circuit 52. These two phase shift circuits 511-512 are each 90° phase shift circuits, and they each phase shift the voltage signal on the second sampling path 122 by 90°, obtaining a second voltage signal that is 180° phase shifted at the rear ends of these two phase shift circuits 511-512. The signal superposition circuit 52 has its first input terminal connected to the output terminal of the first sampling path 121 to obtain a first voltage signal with its original phase, and its second input terminal connected to the output terminals of the two phase shift circuits 511-512 to obtain a second voltage signal that is 180° phase shifted, and it superimposes this first voltage signal and the second voltage signal, and outputs a third voltage signal filtered of AC noise via its output terminal.

[0040] Furthermore, it is preferable that the voltage processing module 123 further includes a voltage reduction circuit 53. The output terminal of the signal superposition circuit 52 is connected to the input terminal of this voltage reduction circuit 53. A third voltage signal is obtained from the signal superposition circuit 52 with the AC noise filtered out, and its amplitude is reduced by half to obtain a fourth voltage signal representing the DC voltage of the top cover 14. This fourth voltage signal is transmitted to the detection module 124 at the rear end, and the plasma characteristics in the reaction chamber are determined based on this fourth voltage signal.

[0041] Similarly, to verify the AC noise filtering effect of the plasma characteristics detection system in the reaction chamber according to the present invention, circuit simulation and voltage monitoring were performed for each circuit node of the voltage processing module 123 shown in Figure 5. By applying a DC voltage of -30V to the voltage source VG1 shown in Figure 5 and adding AC noise interference with a frequency of 50Hz and an amplitude of 100V, the actual sine waves measured at the VF1 and VF5 terminals of the voltage processing module 123, which is composed of multiple phase adjustment circuits 511 to 512, have equal amplitude and a phase difference of nearly 180°, and an AC noise signal with an amplitude of less than 1.55mV is measured at the VF4 terminal. As a result, the voltage processing module 123, which is composed of multiple phase adjustment circuits 511 to 512 according to the present invention, can improve the AC noise filtering effect and further improve the accuracy of the plasma characteristics detection results.

[0042] To those skilled in the art, the detection system 12 shown in Figure 1, which filters AC noise in the voltage of the top cover with a voltage processing module 123 and then collects the DC bias voltage filtered of AC noise with a voltage sensor 125, is merely a non-limiting embodiment intended to clearly illustrate the main concept of the present invention and to provide a specific method for facilitating public implementation, and is not intended to limit the scope of protection of the present invention.

[0043] Alternatively, in the embodiment shown in Figure 6, the plasma characteristics detection system 62 in the reaction chamber according to the present invention comprises at least two sampling paths 621-622, a voltage processing module 623, and a detection module 624. The at least two sampling paths 621-622 are used to collect voltage signals from the top cover 14 of the reaction chamber, respectively. The voltage processing module 623 is connected to the second sampling path 622 and shifts its voltage signal by 180° to obtain a second voltage signal. The first voltage signal on the first sampling path 621 in its original phase is added to the second voltage signal to obtain a third voltage signal from which AC noise has been filtered. The detection module 624 is connected to the voltage processing module 623 to obtain the third voltage signal and determines the plasma characteristics in the reaction chamber based on the third voltage signal.

[0044] Furthermore, the voltage processing module 623 may include a DC bias voltage sensor 625 and a DC bias voltage sensor 626. Here, the input terminal of the voltage sensor 625 is connected to the output terminal of the first sampling path 621, and its output terminal is connected to the input terminal of the detection module 624, where it performs analog-to-digital conversion of the first voltage signal and transmits the converted first voltage data to the detection module 624. The input terminal of the voltage sensor 626 is connected to the output terminal of the inverter circuit 21 or the plurality of phase shift circuits 511 to 512, and its output terminal is connected to the input terminal of the detection module 624, where it performs analog-to-digital conversion of the second voltage signal and transmits the converted second voltage data to the detection module 624. Subsequently, the detection module 624 obtains a third voltage data by adding the acquired first voltage data and second voltage data in software and filtering out AC noise, and determines the plasma characteristics in the reaction chamber based on the third voltage data, thereby avoiding the need for the superposition circuit 22 and the reduction circuit 23. This reduces the hardware cost of the detection system, enables miniaturization and weight reduction, and mitigates safety risks caused by design flaws in hardware equipment such as circuits.

[0045] Based on the above, the plasma characteristics detection system in a reaction chamber, the semiconductor device processing apparatus, the plasma characteristics detection method in a reaction chamber, and the computer-readable storage medium according to the present invention all collect the voltage of the top cover of the reaction chamber via two sampling paths, maintain the original phase of the voltage signal of one sampling path, shift the phase of the voltage signal of the other sampling path by 180 degrees, further superimpose the output voltages of the two sampling paths to filter out AC noise, and further detect the plasma characteristics in the reaction chamber, thereby improving the accuracy of the plasma characteristics detection results.

[0046] For the sake of simplicity, the above methods are illustrated and described as a series of operations, but it should be understood that these methods are not limited to the order of operations, as according to one or more embodiments, some operations may occur in a different order and / or simultaneously with other operations that are illustrated and described herein or not illustrated and described herein but can be understood by those skilled in the art.

[0047] The prior art descriptions of this disclosure are provided to enable those skilled in the art to prepare or use this disclosure. Various modifications of this disclosure will be obvious to those skilled in the art, and the universal principles defined herein will apply to other modifications without departing from the spirit or scope of this disclosure. Accordingly, this disclosure is not intended to be limited to the examples and designs described herein, but should give the broadest scope to correspond to the principles and novel features described herein. [Explanation of symbols]

[0048] Drawing references 11 Heating wire 12.62 Plasma characteristics detection system in reaction chamber 121 First sampling path 122 Second sampling path 123 Voltage Processing Module 124 detection modules 125 Voltage Sensor 13 RF drive circuit 14 Top Cover 15 AC drive circuit 21 Inverter Circuit 22, 52 Signal Superposition Circuit 23, 53 Voltage Reduction Circuit 511, 512 Phase Shift Circuit 621 First sampling path 622 Second sampling path 623 Voltage Processing Module 624 detection module 625, 626 Voltage Sensors

Claims

1. A system for detecting plasma characteristics in a reaction chamber, The voltage signals of the top cover of the reaction chamber are collected, and at least two sampling paths are provided in which the top cover functions as an RF electrode that excites plasma within the reaction chamber and contacts an AC-driven heating wire, A voltage processing module connected to a second sampling path, which shifts the voltage signal by 180° to obtain a second voltage signal, and adds the second voltage signal to the first voltage signal on the first sampling path with its original phase to obtain a third voltage signal from which AC noise has been filtered. A system for detecting plasma characteristics in a reaction chamber, comprising: a detection module connected to the voltage processing module, which acquires the third voltage signal and determines the plasma characteristics in the reaction chamber based on the third voltage signal.

2. A detection system according to claim 1, The detection system is characterized in that the voltage processing module comprises a plurality of phase shift circuits that stepwise change the phase of the voltage signal on the second sampling path and phase shift the voltage signal on the second sampling path by 180° to acquire the second voltage signal.

3. A detection system according to claim 2, The detection system is characterized in that the voltage processing module comprises two phase shift circuits, each of which phase shifts the voltage signal on the second sampling path by 90° to acquire the second voltage signal.

4. A detection system according to claim 2, The voltage processing module further comprises a signal superposition circuit, the first input terminal of the signal superposition circuit being connected to the output terminal of the first sampling path to acquire a first voltage signal of the original phase, the second input terminal of the signal superposition circuit being connected to the output terminal of the inverter circuit or the plurality of phase shift circuits to acquire a second voltage signal, and the output terminal of the signal superposition circuit being connected to the detection module to output a third voltage signal from which the AC noise has been filtered.

5. A detection system according to claim 4, The detection system is characterized in that the voltage processing module further comprises a voltage reduction circuit, the output terminal of the signal superposition circuit is connected to the detection module via the voltage reduction circuit, the voltage reduction circuit reduces the amplitude of the third voltage signal by half to obtain a fourth voltage signal representing the DC voltage on the top cover, transmits the fourth voltage signal to the detection module, and the detection module determines the plasma characteristics in the reaction chamber based on the fourth voltage signal.

6. A detection system according to claim 2, The voltage processing module further comprises a first voltage sensor, the input terminal of the first voltage sensor being connected to the output terminal of the voltage processing module, the output terminal of the first voltage sensor being connected to the input terminal of the voltage processing module, the third voltage signal being converted from analog to digital, the converted third voltage data being transmitted to the detection module, and the plasma characteristics in the reaction chamber being determined based on the voltage data, characterized in that the detection system is characterized in that

7. A detection system according to claim 2, The voltage processing module further comprises a second voltage sensor and a third voltage sensor, the input terminal of the second voltage sensor being connected to the output terminal of the first sampling path, and the output terminal of the second voltage sensor being connected to the input terminal of the detection module, and converting the first voltage signal from analog to digital, and transmitting the converted first voltage data to the detection module. A detection system characterized in that the input terminal of the third voltage sensor is connected to the output terminal of the inverter circuit or the plurality of phase shift circuits, the output terminal of the third voltage sensor is connected to the input terminal of the detection module, the second voltage signal is converted from analog to digital, and the converted second voltage data is transmitted to the detection module, the detection module adds the first voltage data and the second voltage data to determine the corresponding third voltage data, and the plasma characteristics in the reaction chamber are determined based on the third voltage data.

8. A semiconductor device processing apparatus, A reaction chamber equipped with a top cover that is used as an RF electrode and contacts an AC-driven heating wire, A heating wire connected to an AC drive circuit, which heats the reaction chamber to promote the vapor deposition reaction in semiconductor processing, A system for detecting plasma characteristics in a reaction chamber according to any one of claims 1 to 7, which acquires a voltage signal filtered of AC noise from the top cover and determines the plasma characteristics in the reaction chamber based on the voltage signal, A semiconductor device processing apparatus comprising: an RF drive circuit that connects the top cover and the detection system, and drives the top cover to excite the plasma in the reaction chamber based on the detection result of the plasma characteristics, thereby promoting the vapor phase deposition reaction of the semiconductor processing.

9. A method for detecting plasma characteristics in a reaction chamber, A step of collecting voltage signals from the top cover of the reaction chamber via two sampling paths, wherein the top cover functions as an RF electrode for exciting plasma within the reaction chamber; The steps include obtaining the second voltage signal by shifting the voltage signal of the second sampling path by 180° in phase, The steps include adding the second voltage signal to the first voltage signal in its original phase on the first sampling path to obtain a third voltage signal from which AC noise has been filtered, A method for detecting plasma characteristics in a reaction chamber, comprising the step of determining the plasma characteristics in the reaction chamber based on the third voltage signal.

10. A computer-readable storage medium on which computer instructions are stored, A computer-readable storage medium characterized in that, when the computer instruction is executed by the processor, the method for detecting plasma characteristics in a reaction chamber according to claim 9 is performed.

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