Light emitting device, display device and surface emitting device

Abstract

A light-emitting element according to the present disclosure: comprises a light-emitting part 30 that has a plurality of light-emitting regions 30', and, for each light-emitting region 30', one or a plurality of micro-lens members 60 that control the direction in which light emitted from said light-emitting region 30' travels; alternatively comprises a light-emitting part 30 that has one light-emitting region 30', and a plurality of micro-lens members 60 that control the direction in which light emitted from the one light-emitting region 30' travels; or alternatively comprises a light-emitting part 30 that has a plurality of light-emitting regions 30', and one or a plurality of micro-lens members 60 that control the direction in which light emitted from the plurality of light-emitting regions 30' travels.

Description

[Technical field]

[0001] The present disclosure relates to a light-emitting element, and a display device and a surface-emitting device equipped with such a light-emitting element, and more specifically, to a self-luminous type light-emitting element, and a display device and a surface-emitting device equipped with such a self-luminous type light-emitting element. [Background technology]

[0002] In recent years, lighting devices and organic electroluminescence display devices (hereinafter simply referred to as organic EL display devices) using organic electroluminescence elements (hereinafter simply referred to as organic EL elements) as light-emitting elements are becoming widespread. In organic EL display devices, there is a strong demand for the development of technology for efficiently extracting light. If the light extraction efficiency is low, the actual amount of light emitted by the organic EL elements is not effectively utilized, which causes a large loss in terms of power consumption and the like. In organic EL elements, attempts have been made to control the light generated in the light-emitting layer, such as by introducing a resonator structure to improve the color purity of the emitted color and increase the light-emitting efficiency (see, for example, International Publication No. 2001 / 039554). Furthermore, it has been disclosed, for example, in JP-A-2009-049135, that the light-emitting intensity can be maximized by making the light generated in the resonator structure and the light reflected and returned at each reflection end mutually reinforce each other.

[0003] Furthermore, a conventional projection display device is composed of, for example, a light source that emits light, a spatial modulator that modulates the light from the light source to form an image, and a projection optical system that projects the image from the spatial modulator onto, for example, a screen. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2001 / 039554 [Patent Document 2] JP 2009-049135 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, as far as the inventor has researched, no projection display device is known that integrates a light source that emits light with a spatial modulator that forms an image, that is, a projection display device or surface-emitting device that can form an image using self-luminous light-emitting elements instead of a light source and a spatial modulator.

[0006] Therefore, an object of the present disclosure is to provide a display device, including a projection-type display device capable of forming an image using self-luminous type light-emitting elements, a surface-emitting device composed of self-luminous type light-emitting elements, and a light-emitting element suitable for use in such a display device or surface-emitting device. [Means for solving the problem]

[0007] In order to achieve the above object, a light-emitting device according to a first aspect of the present disclosure comprises: A light emitting section having a plurality of light emitting regions; and One or more microlens members for controlling the direction of light emitted from each light-emitting region; It is equipped with:

[0008] In order to achieve the above object, a light-emitting device according to a second aspect of the present disclosure comprises: A light emitting section having one light emitting region; and A plurality of microlens members for controlling the direction of light emitted from one light-emitting region; It is equipped with:

[0009] In order to achieve the above object, a light-emitting device according to a third aspect of the present disclosure comprises: A light emitting section having a plurality of light emitting regions; and one or more microlens members for controlling the direction of light emitted from the plurality of light-emitting regions; It is equipped with:

[0010] In order to achieve the above object, a light-emitting device according to a fourth aspect of the present disclosure comprises: A light emitting section having a plurality of light emitting regions; and a light guide section for controlling the direction of light emitted from each light-emitting region; Equipped with The light emitting region has a convex shape in a direction away from the light guiding portion.

[0011] In order to achieve the above object, the display device of the present disclosure comprises: A first substrate, A second substrate, and A plurality of light emitting elements sandwiched between a first substrate and a second substrate; The panel has a Each of the light-emitting elements is composed of a light-emitting element according to the first to fourth aspects of the present disclosure.

[0012] In order to achieve the above object, the surface emitting device of the present disclosure is A first substrate, A second substrate, and A plurality of light emitting elements sandwiched between a first substrate and a second substrate; The panel has a Each of the light-emitting elements is composed of a light-emitting element according to the first to fourth aspects of the present disclosure. [Brief description of the drawings]

[0013] [Figure 1] FIG. 1 is a schematic partial cross-sectional view of a light-emitting element according to the first embodiment and a panel constituting the projection display device according to the first embodiment. [Diagram 2] 2A and 2B are schematic plan views of a light-emitting section having a plurality of light-emitting regions in one light-emitting element and a light-emitting section having a plurality of microlens members in Example 1, respectively. [Diagram 3] 3A and 3B are schematic plan views of a light-emitting section having multiple light-emitting regions in one light-emitting element, and a schematic plan view of a light-emitting section having multiple microlens members, respectively, in variant example 1 of Example 1. [Figure 4] 4A and 4B are schematic plan views of a light-emitting section having multiple light-emitting regions in one light-emitting element, and a schematic plan view of a light-emitting section having multiple microlens members, respectively, in variant example 2 of Example 1. [Diagram 5] 5A and 5B are schematic plan views of a light-emitting section having multiple light-emitting regions in one light-emitting element, and a schematic plan view of a light-emitting section having multiple microlens members, respectively, in Variation 3 of Example 1. [Figure 6] 6A and 6B are schematic plan views of a light-emitting section having multiple light-emitting regions in one light-emitting element, and a schematic plan view of a light-emitting section having multiple microlens members, respectively, in Variation 4 of Example 1. [Figure 7] 7A and 7B are diagrams showing a schematic arrangement of four panels that constitute the projection type display device of the first embodiment. [Figure 8] FIG. 8 is a diagram showing a schematic diagram of an image projection state of the four panels constituting the projection type display device of the first embodiment shown in FIG. 7A. [Figure 9] FIG. 9 is a diagram showing a schematic diagram of an image projection state of the four panels constituting the projection type display device of the first embodiment shown in FIG. 7B. [Figure 10] FIG. 10 is a schematic partial cross-sectional view of a modification 5 of the light emitting element of the first embodiment and the panel constituting the projection type display device of the first embodiment. [Figure 11] FIG. 11 is a schematic partial cross-sectional view of a sixth modification of the light emitting element and the panel constituting the projection type display device of the first embodiment. [Figure 12] FIG. 12 is a schematic partial cross-sectional view of a seventh modification of the light-emitting element and the panel constituting the projection display device of the first embodiment. [Figure 13] FIG. 13 is a plan view diagrammatically illustrating the light emitting element of the first embodiment shown in FIG. 12 and a metal thin film filter layer in a panel constituting the projection type display device of the first embodiment. [Figure 14]FIG. 14 is a schematic partial cross-sectional view of a modification 8 of the light emitting element of the first embodiment and the panel constituting the projection type display device of the first embodiment. [Figure 15] FIG. 15 is a conceptual diagram of a ninth modification of the panel constituting the projection type display device of the first embodiment. [Figure 16] 16A and 16B are conceptual diagrams of a tenth modified example of the panel constituting the projection display device of the first embodiment. [Figure 17] FIG. 17 is a schematic partial cross-sectional view of a modified example 11 of the light emitting element of the first embodiment and the panel constituting the projection type display device of the first embodiment. [Figure 18] FIG. 18 is a schematic partial cross-sectional view of a modification 12 of the light emitting element of the first embodiment and the panel constituting the projection type display device of the first embodiment. [Figure 19] FIG. 19 is a diagram showing a schematic diagram of the emission state of light from a light emitting element. [Figure 20] 20A and 20B are schematic partial cross-sectional views of the light-emitting elements of Examples 1 and 5, respectively. [Figure 21] 21A and 21B are schematic plan views of a light-emitting section having one light-emitting region in one light-emitting element, and a schematic plan view of a light-emitting section having multiple microlens members in Example 2, respectively. [Figure 22] 22A and 22B are schematic plan views of a light-emitting section having multiple light-emitting regions in one light-emitting element and a light-emitting section having one microlens member in Example 3, respectively. [Figure 23] Figures 23A and 23B are schematic plan views of a light-emitting section having multiple light-emitting regions in one light-emitting element, and a schematic plan view of a light-emitting section having three microlens members, respectively, in variant example 1 of Example 3. [Figure 24] FIG. 24 is a schematic partial cross-sectional view of a light-emitting element according to the fourth embodiment and one light-emitting portion of a panel constituting the projection display device according to the fourth embodiment. [Diagram 25]FIG. 25 is a schematic partial cross-sectional view of one light-emitting portion in a panel constituting the light-emitting element of the fourth embodiment and the first modified example of the projection display device of the fourth embodiment. [Figure 26] FIG. 26 is a schematic partial cross-sectional view of one light-emitting portion in a panel constituting the light-emitting element of the fourth embodiment and the second modified example of the projection type display device of the fourth embodiment. [Figure 27] FIG. 27 is a schematic partial cross-sectional view of a light-emitting element according to the fifth embodiment and a panel constituting the projection display device according to the fifth embodiment. [Figure 28] 28A, 28B, and 28C are schematic diagrams for explaining the relationship between the light emitting region and the planar shape of the microlens member. [Figure 29] 29A, 29B, 29C, and 29D are schematic diagrams for explaining the brightness and the like obtained when a lens with a low F-number and a lens with a high F-number are used. [Diagram 30] 30A and 30B are schematic layout diagrams of three organic electroluminescence elements constituting one pixel of a conventional organic electroluminescence display device and a schematic layout diagram of a light-emitting region, respectively. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, the present disclosure will be described based on examples with reference to the drawings, but the present disclosure is not limited to the examples, and various numerical values ​​and materials in the examples are merely examples. The description will be made in the following order. 1. General Description of the Light-Emitting Device According to the First to Fourth Aspects of the Present Disclosure, the Display Device of the Present Disclosure, and the Surface Emitting Device of the Present Disclosure 2. Example 1 (Light-emitting device according to the first aspect of the present disclosure, the light-emitting device of the first form, and the display device of the present disclosure) 3. Example 2 (Light-emitting device according to the second aspect of the present disclosure) 4. Example 3 (Light-emitting device according to the third aspect of the present disclosure) 5. Example 4 (Light-emitting device according to the fourth aspect of the present disclosure) 6. Example 5 (Light Emitting Element of the Second Form) 7. Example 6 (Combination of the light-emitting element of the first embodiment and the light-emitting element of the second embodiment) 8.Other

[0015] <General Description of the Light-Emitting Device According to the First to Fourth Aspects of the Present Disclosure, the Display Device of the Present Disclosure, and the Surface Emitting Device of the Present Disclosure> The light-emitting element according to the first aspect of the present disclosure, the light-emitting element according to the first aspect of the present disclosure provided in the display device of the present disclosure, and the light-emitting element according to the first aspect of the present disclosure provided in the surface-emitting device of the present disclosure may be collectively referred to as "light-emitting element, etc. according to the first aspect of the present disclosure". In addition, the light-emitting element according to the second aspect of the present disclosure, the light-emitting element according to the second aspect of the present disclosure provided in the display device of the present disclosure, and the light-emitting element according to the second aspect of the present disclosure provided in the surface-emitting device of the present disclosure may be collectively referred to as "light-emitting element, etc. according to the second aspect of the present disclosure". Furthermore, the light-emitting element according to the third aspect of the present disclosure, the light-emitting element according to the third aspect of the present disclosure provided in the display device of the present disclosure, and the light-emitting element according to the third aspect of the present disclosure provided in the surface-emitting device of the present disclosure may be collectively referred to as "light-emitting element, etc. according to the third aspect of the present disclosure". In addition, the light-emitting element according to the fourth aspect of the present disclosure, the light-emitting element according to the fourth aspect of the present disclosure provided in the display device of the present disclosure, and the light-emitting element according to the fourth aspect of the present disclosure provided in the surface-emitting device of the present disclosure may be collectively referred to as the “light-emitting element, etc. according to the fourth aspect of the present disclosure.” Furthermore, the light-emitting element, etc. according to the first aspect of the present disclosure, the light-emitting element, etc. according to the second aspect of the present disclosure, the light-emitting element, etc. according to the third aspect of the present disclosure, and the light-emitting element, etc. according to the fourth aspect of the present disclosure may be collectively referred to as the “light-emitting element, etc. of the present disclosure.”

[0016] In the light-emitting element according to the first aspect of the present disclosure, a light-emitting section having a plurality of light-emitting regions and one or more microlens members for controlling the traveling direction of light emitted from each light-emitting region are provided, and for example, the light-emitting section may have M×N (where M and N are integers of 1 or more, excluding the case where M=1 and N=1) light-emitting regions, and may be provided with P×Q (where P=p×M, Q=q×N, p and q are integers of 1 or more) microlens members for controlling the traveling direction of light emitted from the M×N light-emitting regions. The plurality of light-emitting regions may be arranged at desired positions, and may be regularly arranged (specifically, for example, the centers of the light-emitting regions may be arranged on the lattice points of a virtual lattice), or may not be regularly arranged. In the case where one microlens member is provided to control the traveling direction of the light emitted from each light-emitting region, the optical axis of the microlens member may be arranged at a desired position, and may be arranged regularly (specifically, for example, the optical axis of the microlens member may be arranged on the lattice point of the virtual lattice), and may not be arranged regularly. In addition, the size and shape of the light-emitting region in the light-emitting section may be changed depending on the arrangement position of the light-emitting section in the display device or surface light-emitting device, or may be constant. The size, shape, curvature radius, optical power, and other physical properties and constituent materials of the multiple microlens members may be changed depending on the arrangement position in the light-emitting section, or may be constant. In addition, the virtual lattice may be, but is not limited to, a square lattice, a rectangular lattice, or a regular hexagonal lattice. The same applies below.

[0017] In the light-emitting element according to the second aspect of the present disclosure, a plurality of microlens members are provided to control the traveling direction of light emitted from one light-emitting region. For example, the light-emitting element may be provided with P×Q microlens members (where P and Q are integers of 1 or more, excluding the case where P=1 and Q=1) to control the traveling direction of light emitted from one light-emitting region. The plurality of microlens members may be arranged at desired positions, and may be regularly arranged (specifically, for example, the optical axis of the microlens member may be arranged on the lattice point of a virtual lattice), or may not be regularly arranged. The physical properties such as the size, shape, radius of curvature, and optical power of the plurality of microlens members, and the constituent materials may be changed depending on the arrangement position in the light-emitting section, or may be constant.

[0018] In the light-emitting element according to the third aspect of the present disclosure, the light-emitting unit has a plurality of light-emitting regions, and one or more microlens members that control the traveling direction of the light emitted from the plurality of light-emitting regions are provided. For example, the light-emitting unit has M×N light-emitting regions (where M and N are integers of 1 or more, excluding the case where M=1 and N=1), and the number of microlens members that control the traveling direction of the light emitted from the M×N light-emitting regions may be one or more, and for example, the number of the plurality of microlens members may be P′×Q′ (where P′=M / p′, Q′=N / q′, and p′ and q′ are integers of 1 or more). The plurality of light-emitting regions may be arranged at desired positions, and may be regularly arranged (specifically, for example, the center of the light-emitting region may be arranged on a lattice point of a virtual lattice), or may not be regularly arranged. The multiple microlens members may be arranged in desired positions, and may be arranged regularly (specifically, for example, the optical axes of the microlens members may be arranged on the lattice points of a virtual lattice), or may not be arranged regularly. The size and shape of the light-emitting region in the light-emitting section may be changed depending on the position of the light-emitting section in the display device or surface-emitting device, or may be constant. The physical properties such as the size, shape, radius of curvature, and optical power of the multiple microlens members, and the constituent materials may be changed depending on the position of the light-emitting section, or may be constant.

[0019] In the light-emitting element according to the fourth aspect of the present disclosure, the light-emitting unit has a plurality of light-emitting regions and is provided with a light guide unit that controls the traveling direction of light emitted from each light-emitting region. For example, the light-emitting unit has M×N light-emitting regions (where M and N are integers of 1 or more, excluding the case where M=1 and N=1), and the light guide unit that controls the traveling direction of light emitted from each light-emitting region may be one or more. That is, the number of the plurality of light guide units may be P×Q (where P=p×M, Q=q×N, and p and q are integers of 1 or more), or may be P′×Q′ (where P′=M / p′, Q′=N / q′, and p′ and q′ are integers of 1 or more). The plurality of light-emitting regions may be arranged at desired positions, and may be regularly arranged (specifically, for example, the center of the light-emitting region may be arranged on a lattice point of a virtual lattice), or may not be regularly arranged. The multiple light guides may be arranged at desired positions, and may be regularly arranged (specifically, for example, the axes of the light guides may be arranged on the lattice points of a virtual lattice), or may not be regularly arranged. The size and shape of the light emitting region in the light emitting section may be changed depending on the position of the light emitting section in the display device or surface light emitting device, or may be constant. The physical properties and constituent materials of the multiple light guiding sections, such as the size and shape, may be changed depending on the position of the light emitting section in the light emitting section, or may be constant.

[0020] The light-emitting elements according to the first to third aspects of the present disclosure include a microlens member (lens member, on-chip lens), so that the light emitted from the light-emitting region of the light-emitting element can be made into a desired state, such as parallel light. The light-emitting element according to the fourth aspect of the present disclosure includes a light guide section (light reflecting section, reflector section), so that the light emitted from the light-emitting region of the light-emitting element can be made into a desired state, such as parallel light.

[0021] In the light-emitting device according to the first embodiment of the present disclosure, the optical axis of the microlens member may not be located on the center line passing through the center of the light-emitting region. Of course, the light-emitting device according to the first embodiment of the present disclosure includes a form in which the optical axis of the microlens member is located on the center line passing through the center of the light-emitting region. Specifically, as described above, the plurality of light-emitting regions may be regularly arranged (specifically, for example, the centers of the light-emitting regions are located on the lattice points of a virtual lattice), and the optical axis of the microlens member may not be located on this lattice point, or the plurality of light-emitting regions may not be regularly arranged (specifically, for example, the centers of the light-emitting regions are not located on the lattice points of a virtual lattice), and the optical axis of the microlens member may be located on this lattice point, or a combination of these forms may be used.

[0022] In the light-emitting device according to the first to third aspects of the present disclosure, the planar shape of the microlens member may be a rectangle or a square with rounded corners. In this case, the planar shape of the light-emitting region may be a rectangle, a square, a polygon, a rectangle or a square with rounded corners, a polygon with rounded corners, a circle, or an ellipse. By making the planar shape of the microlens member a rectangle or a square, in particular, the traveling direction of the light emitted from the light-emitting region can be efficiently controlled regardless of the planar shape of the light-emitting region and regardless of the positional relationship between the microlens member and the light-emitting region. The microlens member is a spherical lens or an aspherical lens. When the microlens member is, for example, a plano-convex lens, the microlens member may have a convex surface facing away from the light-emitting region, or may have a convex surface facing toward the light-emitting region.

[0023] Furthermore, in the light-emitting device according to the first to third aspects of the present disclosure including the preferred aspects described above, when the optical axis of the microlens member is located on a center line passing through the center of the light-emitting region, the orthogonal projection image of the light-emitting region can be included in the orthogonal projection image of the microlens member. Specifically, in the light-emitting device according to the first aspect of the present disclosure, when the optical axis of the microlens member is located on a center line passing through the center of the light-emitting region, the orthogonal projection image of one light-emitting region can be included in the orthogonal projection image of one microlens member. In addition, in the light-emitting device according to the second aspect of the present disclosure, when the optical axis of the microlens member is located on a center line passing through the center of the light-emitting region, the orthogonal projection image of one light-emitting region can be included in the orthogonal projection image of the entire P×Q microlens members. Furthermore, in the light-emitting device according to the third aspect of the present disclosure, when the optical axis of the microlens member is located on a center line passing through the center of the light-emitting region, the orthogonal projection image of the M×N light-emitting regions can be included in the orthogonal projection image of one microlens member.

[0024] Furthermore, in the light-emitting element etc. according to the first to third aspects of the present disclosure including the preferred aspects described above, a second microlens member that controls the direction of light emitted from the microlens member may be further included.

[0025] Furthermore, in the light-emitting device and the like according to the first to third aspects of the present disclosure including the preferred aspects described above, a light guide section for controlling the traveling direction of the light emitted from the microlens member may be further provided. The inner surface of the light guide section (the surface of the light guide section on which the light emitted from the microlens member impinges) when cut along a virtual plane perpendicular to the normal direction of the light-emitting region may be parallel or non-parallel to the normal direction of the light-emitting region. That is, the inner surface of the light guide section may be forward tapered or reverse tapered with respect to the light-emitting region, but from the viewpoint of light collection, a reverse tapered shape is preferable. Furthermore, in this case, the light guide section has a structure in which a plurality of light guide sections are stacked; the axes of the plurality of light guide sections may not be on the same straight line. Of course, the axes of the plurality of light guide sections may also be on the same straight line. In addition, the axis of the bottom of the light guide section closest to the light-emitting region may not be located on the center line passing through the center of the light-emitting region. Of course, this includes a form in which the axis of the bottom of the light guiding unit closest to the light emitting region is located on a center line passing through the center of the light emitting region. In addition, when the axis of the bottom of the light guiding unit closest to the light emitting region is located on a center line passing through the center of the light emitting region, the orthogonal projection image of the light emitting region can be included in the orthogonal projection image of the bottom of the light guiding unit. The above description can be applied to the light emitting element and the like according to the fourth aspect of the present disclosure. Here, the inner surface of the light guiding unit being forward tapered refers to a shape in which the inner surface of the light guiding unit widens (widens toward the second substrate) as it moves away from the light emitting region, and the inner surface of the light guiding unit being reverse tapered refers to a shape in which the inner surface of the light guiding unit widens (narrows toward the second substrate) as it moves away from the light emitting region.

[0026] Furthermore, in the light-emitting device and the like according to the present disclosure including the preferred embodiments described above, The light-emitting part is a first electrode shared in the light emitting region; an organic layer formed on the first electrode and including a light-emitting layer made of an organic light-emitting material; and a second electrode formed on the organic layer; Equipped with Further, a light reflective layer is provided below the first electrode, light emitted from the light-emitting layer is resonated between the interface between the second electrode and the organic layer and the light-reflecting layer, causing a portion of the light to be emitted from the second electrode; An insulating layer is formed between the first electrode and the organic layer, The insulating layer may have an opening that defines the light-emitting region. A light-emitting element of this type may be called a "light-emitting element of the first type" for convenience. When the surface of the light-reflecting layer on the first electrode side is called a "first interface" for convenience, and the interface between the second electrode and the organic layer is called a "second interface" for convenience, a resonator structure is formed between the first interface and the second interface. Alternatively, The light-emitting part is a first electrode shared in the light emitting region; an organic layer formed on the first electrode and including a light-emitting layer made of an organic light-emitting material; and a second electrode formed on the organic layer; Equipped with The light-emitting layer is formed by laminating a plurality of light-emitting layers that emit light of the same color, An insulating layer is formed between the first electrode and the organic layer, The insulating layer may have an opening for defining the light-emitting region. The light-emitting layers may have the same composition. For convenience, the light-emitting element of this type may be called a "light-emitting element of the second type."

[0027] Furthermore, in the light-emitting device or the like according to the first to third aspects of the present disclosure including the preferred embodiments described above, the microlens member may be configured to have a positive optical power.

[0028] Furthermore, in the light-emitting elements etc. according to the first to third aspects of the present disclosure including the preferred forms and configurations described above, the light-emitting region may be configured to have a convex shape in a direction away from the microlens member.

[0029] Alternatively, in the light-emitting device or the like according to the first to third aspects of the present disclosure including the preferred embodiments described above, the microlens member may be configured to have negative optical power.

[0030] Furthermore, in the light-emitting device according to the fourth aspect of the present disclosure including the above-described preferred configurations and structures, the light-emitting region may have a positive optical power, and further, in the light-emitting device according to the fourth aspect of the present disclosure including the above-described preferred configurations and structures, the light-guiding sections may have a structure in which multiple light-guiding sections are stacked; the axes of the multiple light-guiding sections may not be on the same straight line. Of course, the above-described preferred configurations also include a configuration in which the axes of the multiple light-guiding sections are on the same straight line.

[0031] Furthermore, in the display device of the present disclosure including the preferred embodiments and configurations described above, the display device may be a projection type display device.

[0032] The microlens member can be made of a transparent resin material such as an acrylic resin, and can be obtained by melt flowing the transparent resin material, or by etching back the material, or by forming the transparent resin material into a lens shape based on a nanoprinting method.

[0033] Specifically, the light guide may be made of a material that reflects the light emitted from the light emitting region or the microlens member, and examples of the material include metal materials, alloy materials, and dielectric materials (insulating materials) having a refractive index smaller than that of the medium through which the light emitted from the light emitting region or the microlens member passes, or multi-layered structures of dielectric materials. Specifically, examples of the metal materials and alloy materials include an aluminum (Al) layer, an aluminum alloy layer (e.g., an Al-Nd layer), a chromium (Cr) layer, a silver (Ag) layer, and a silver alloy layer (e.g., an Ag-Cu layer, an Ag-Pd-Cu layer, and an Ag-Sm-Cu layer), and the light guide may be formed by deposition methods including electron beam deposition, hot filament deposition, and vacuum deposition, sputtering, CVD, and ion plating, plating methods (electroplating and electroless plating), lift-off, laser ablation, and sol-gel methods.

[0034] In the light-emitting device and the like of the present disclosure including the preferred embodiments and configurations described above, the full width at half maximum (FWHM) value of the light emitted from the light-emitting device can be 30 nm or less. The full width at half maximum (FWHM) value of the light emitted from a conventional organic EL device described later is often 60 nm to 100 nm, and the light-emitting device and the like of the present disclosure have a sharper emission spectrum than the conventional organic EL device.

[0035] Furthermore, in the light-emitting element and the like of the present disclosure including the preferred embodiments and configurations described above, the light intensity on the center line passing through the center of the light-emitting portion of the light-emitting element (the light intensity of the light emitted from the light-emitting element) is I0, and the light intensity on the center line passing through the center of the light-emitting portion of a light-emitting element not provided with a light reflecting layer (the light intensity of the light emitted from the light-emitting element) is I conv When I0 / I conv ≧5 It is possible to make the above configuration satisfy the above.

[0036] Furthermore, in the light-emitting element etc. of the present disclosure including the preferred embodiment and configuration described above, when the light intensity (light intensity of light emitted from the light-emitting part) on the center line passing through the center of the light-emitting part of the light-emitting element is 100%, the directivity half-value angle, which is the angle between the direction of the center line at which the light intensity (light intensity of light emitted from the light-emitting part) is 50% and the center line, can be 25 degrees or less. The directivity half-value angle in Lambertian radiation is about 70 degrees. That is, the light emitted from the light-emitting element etc. of the present disclosure is more directional than the conventional organic EL element described later, or is light close to parallel light. Therefore, a telecentric optical system that is often required between the light source and the spatial modulator of a conventional projection display device (projector) is not necessary, and the projection display device can be simplified. Furthermore, since the light emitted from the light-emitting elements etc. disclosed herein is highly directional or nearly parallel, it is possible to prevent the occurrence of a phenomenon in which the light generated in the light-emitting layer is repeatedly totally reflected between the first substrate and the second substrate and is emitted from the joint between the first substrate and the second substrate (the edge surface of the panel), resulting in loss of light emitted from the panel.

[0037] In a first type of light-emitting element having a resonator structure formed between a first interface and a second interface, when the optical distance from the maximum light-emitting position of the light-emitting layer to the first interface is OL1, the optical distance from the maximum light-emitting position of the light-emitting layer to the second interface is OL2, and m1 and m2 are integers, the light-emitting element can be configured to satisfy the following formulas (1-1) and (1-2). 0.7{-Φ1 / (2π)+m1}≦2×OL1 / λ≦1.2{-Φ1 / (2π)+m1} (1-1) 0.7{-Φ2 / (2π)+m2}≦2×OL2 / λ≦1.2{-Φ2 / (2π)+m2} (1-2) Where: λ : The maximum peak wavelength of the spectrum of the light generated in the light-emitting layer (or the desired wavelength of the light generated in the light-emitting layer) Φ1: Phase shift amount (unit: radian) of the reflected light (light reflected at the first interface) occurring at the first interface, where -2π<Φ1≦0 Φ2: Phase shift amount (unit: radian) of the reflected light (light reflected at the second interface) occurring at the second interface. However, -2π<Φ2≦0 It is.

[0038] The value of m1 is a value of 0 or more, and the value of m2 is a value of 0 or more, independent of the value of m1. However, from the viewpoint of potential design in the organic layer, i.e., from the viewpoint of optimizing the potential in the organic layer, it is preferable to satisfy m1 ≧ 1, m2 ≧ 1, which makes it possible to reduce the full width at half maximum (FWHM) value of light emitted from the light-emitting element, as will be described later.

[0039] The distance L1 from the maximum light emission position of the light-emitting layer to the first interface refers to the actual distance (physical distance) from the maximum light emission position of the light-emitting layer to the first interface, and the distance L2 from the maximum light emission position of the light-emitting layer to the second interface refers to the actual distance (physical distance) from the maximum light emission position of the light-emitting layer to the second interface. The optical distance is also called the optical path length, and generally refers to n×L when a ray of light passes through a medium with a refractive index of n for a distance L. The same applies below. Therefore, when the average refractive index is n ave When OL1 = L1 × n ave OL2=L2×n ave Here, the average refractive index n ave is obtained by summing up the product of the refractive index and the thickness of each layer constituting the organic layer (or the organic layer and the interlayer insulating layer, or the organic layer, the first electrode and the interlayer insulating layer), and dividing the sum by the thickness of the organic layer (or the organic layer and the interlayer insulating layer, or the organic layer, the first electrode and the interlayer insulating layer).

[0040] The desired wavelength λ (specifically, the red wavelength, the green wavelength, and the blue wavelength) of the light generated in the light-emitting layer is determined, and various parameters such as OL1 and OL2 of the light-emitting element are calculated based on equations (1-1) and (1-2), to design the light-emitting element.

[0041] The light reflecting layer and the second electrode absorb a part of the incident light and reflect the rest. Therefore, a phase shift occurs in the reflected light. The phase shift amounts Φ1 and Φ2 can be obtained by measuring the real and imaginary parts of the complex refractive index of the material constituting the light reflecting layer and the second electrode, for example, using an ellipsometer, and performing calculations based on these values ​​(see, for example, "Principles of Optic", Max Born and Emil Wolf, 1974 (PERGAMON PRESS)). The refractive index of the first electrode, such as the organic layer and the interlayer insulating layer, or the refractive index of the first electrode in the case where the first electrode absorbs a part of the incident light and reflects the rest, can also be obtained by measuring using an ellipsometer.

[0042] Examples of materials constituting the light reflecting layer include aluminum, aluminum alloys (e.g., Al-Nd and Al-Cu), Al / Ti laminated structures, Al-Cu / Ti laminated structures, chromium (Cr), silver (Ag), and silver alloys (e.g., Ag-Cu, Ag-Pd-Cu, Ag-Sm-Cu). The light reflecting layer can be formed by, for example, deposition methods including electron beam deposition, hot filament deposition, and vacuum deposition, sputtering, CVD, ion plating, plating methods (electroplating and electroless plating), lift-off, laser ablation, and sol-gel methods. Depending on the material constituting the light reflecting layer, it is preferable to form an undercoat film made of, for example, TiN in order to control the crystal state of the light reflecting layer to be formed.

[0043] Furthermore, in the light-emitting element of the first embodiment including the above-described preferred embodiment and configuration, a light-absorbing layer (black matrix layer) may be formed between the microlens members or light guides of adjacent light-emitting elements. By forming a light-absorbing layer (black matrix layer) between the microlens members or light guides of adjacent light-emitting elements, it is possible to reliably suppress the occurrence of overlapping of minute images between adjacent light-emitting elements. That is, it is possible to reliably suppress the occurrence of a phenomenon in which a unit image formed by a certain light-emitting element partially overlaps with a unit image formed by a light-emitting element adjacent to or located in the vicinity of this certain light-emitting element (hereinafter, for convenience, referred to as "partial overlap of unit pixels"). The light-absorbing layer is, for example, made of a black resin film (specifically, for example, a black polyimide resin) having an optical density of 1 or more containing a black colorant, or is made of a thin film filter utilizing thin film interference. The thin film filter is, for example, made of two or more layers of thin films made of metal, metal nitride, or metal oxide, and attenuates light by utilizing thin film interference. A specific example of a thin film filter is one in which Cr and chromium oxide (III) (Cr2O3) are laminated alternately.

[0044] Furthermore, in the light-emitting element of the first embodiment including the preferred embodiment and configuration described above, the first electrode and the light-reflecting layer can be surrounded by a light-shielding portion. That is, a light-shielding portion may be provided between the light-emitting elements. By adopting such a form, it is possible to reliably prevent the occurrence of partial overlap of unit pixels. Specific examples of the light-shielding material constituting the light-shielding portion include materials capable of blocking light, such as titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), aluminum (Al), and MoSi2. The light-shielding portion can be formed by deposition methods including electron beam deposition, hot filament deposition, and vacuum deposition, sputtering, CVD, and ion plating.

[0045] Furthermore, in the light-emitting element of the first embodiment including the above-described preferred embodiment and configuration, a metal thin film filter layer may be further formed between the first electrode and the light reflecting layer. The metal thin film filter layer is made of, for example, gold (Au), silver (Ag), platinum (Pt), aluminum (Al), copper (Cu), tungsten (W), or an alloy containing these materials, and has a large number of holes having a planar shape such as a circle, ellipse, rectangle, "U" shape, or cross shape with a size of about 200 nm, arranged two-dimensionally (for example, arranged on lattice points or arranged in a staggered pattern), or has a large number of slits. The metal thin film filter layer is disclosed in, for example, JP 2015-232599 A. In the metal thin film filter layer, only light of a specific wavelength passes through via surface plasmon polariton (SPR) in which free electrons on the metal surface are coupled with electromagnetic waves. Such a metal thin film filter layer subjected to periodic microfabrication is also called a plasmonic filter (hole array filter). Metal thin film filter layers are widely known in the field of imaging devices, but as far as the inventor has investigated, their use in a projection display device equipped with a self-luminous type light-emitting element is not known. Depending on the wavelength of light emitted by the light-emitting element (for example, when the light-emitting element emits infrared light), the above-described metal thin film filter layer may be formed instead of the light reflection layer, and the light may be reflected by the metal thin film filter layer.

[0046] When the second electrode is to function as a cathode electrode, the material (semi-transparent or transparent material) constituting the second electrode is desirably made of a conductive material that transmits emitted light and has a small work function so as to efficiently inject electrons into the organic layer (light-emitting layer), and can be in the form of at least one material selected from the group consisting of Ag, Ag-Mg, Ag-Nd-Cu, Ag-Cu, Au, Al, and Al-Cu. Alternatively, for example, metals or alloys having a small work function such as aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), sodium (Na), strontium (Sr), an alloy of an alkali metal or an alkaline earth metal and silver (Ag) [for example, an alloy of magnesium (Mg) and silver (Ag) (Mg-Ag alloy)], an alloy of magnesium-calcium (Mg-Ca alloy), an alloy of aluminum (Al) and lithium (Li) (Al-Li alloy) can be mentioned. Among them, Mg-Ag alloy is preferable, and the volume ratio of magnesium to silver can be exemplified as Mg:Ag=5:1 to 30:1. Alternatively, the volume ratio of magnesium to calcium can be exemplified as Mg:Ca=2:1 to 10:1. Alternatively, the second electrode can be a so-called transparent electrode (for example, a thickness of 3×10 -8 m to 1×10 -6 m) may be laminated. A bus electrode (auxiliary electrode) made of a low resistance material such as aluminum, aluminum alloy, silver, silver alloy, copper, copper alloy, gold, or gold alloy may be provided for the second electrode to reduce the resistance of the second electrode as a whole. On the other hand, when the second electrode is made to function as an anode electrode, it is desirable to configure the second electrode from a conductive material that transmits emitted light and has a large work function. The thickness of the second electrode can be 4 nm to 50 nm, preferably 4 nm to 20 nm, and more preferably 6 nm to 12 nm. The average light transmittance of the second electrode is desirably 50% to 90%, preferably 60% to 90%.

[0047] When the first electrode is not required to be transparent, the material constituting the first electrode may be, for example, a metal or alloy having a high work function such as platinum (Pt), gold (Au), silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co), or tantalum (Ta) (for example, an Ag-Pd-Cu alloy containing silver as the main component, 0.3% by mass to 1% by mass of palladium (Pd) and 0.3% by mass to 1% by mass of copper (Cu), an Al-Nd alloy, an Al-Cu alloy, or an Al-Cu-Ni alloy) when the first electrode is to function as an anode electrode. Furthermore, when a conductive material having a low work function value and high light reflectance such as aluminum (Al) or an alloy containing aluminum is used, it can be used as an anode electrode by improving the hole injection characteristics by providing an appropriate hole injection layer. The thickness of the first electrode may be, for example, 0.1 μm to 1 μm. Alternatively, a structure can be used in which a transparent conductive material with excellent hole injection properties, such as indium tin oxide (ITO) or indium zinc oxide (IZO), is laminated on a highly light-reflecting reflective film, such as a dielectric multilayer film, aluminum (Al) or its alloy (e.g., an Al-Cu-Ni alloy).

[0048] When the first electrode is required to be transparent, the material constituting the first electrode may be indium tin oxide (ITO, Indium Tin Oxide, including Sn-doped In2O3, crystalline ITO, and amorphous ITO), indium zinc oxide (IZO, Indium Zinc Oxide, Indium Tin Oxide ... In addition to indium oxide, transparent conductive materials using a matrix of indium oxide, indium-gallium oxide (IGO), indium-doped gallium-zinc oxide (IGZO, In-GaZnO4), IFO (F-doped In2O3), ITiO (Ti-doped In2O3), InSn, InSnZnO, tin oxide (SnO2), ATO (Sb-doped SnO2), FTO (F-doped SnO2), zinc oxide (ZnO), aluminum oxide-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), B-doped ZnO, AlMgZnO (aluminum oxide and magnesium oxide-doped zinc oxide), antimony oxide, titanium oxide, NiO, spinel oxide, oxide with YbFe2O4 structure, gallium oxide, titanium oxide, niobium oxide, nickel oxide, etc. can be mentioned. When the first electrode is made to function as a cathode electrode, it is desirable to configure the first electrode from a conductive material having a small work function value and high light reflectance. However, the conductive material with high light reflectance used as an anode electrode can also be used as a cathode electrode by improving the electron injection characteristics by providing an appropriate electron injection layer thereon.

[0049] Examples of methods for forming the first electrode and the second electrode include deposition methods including electron beam deposition, hot filament deposition, and vacuum deposition, sputtering, chemical vapor deposition (CVD), MOCVD, and a combination of ion plating and etching; various printing methods such as screen printing, inkjet printing, and metal mask printing; plating (electroplating and electroless plating); lift-off; laser ablation; and sol-gel. By using various printing and plating methods, it is possible to directly form the first electrode and the second electrode having a desired shape (pattern). Since the second electrode is formed after the organic layer is formed, it is preferable to form the electrode based on a film formation method in which the energy of the film formation particles is small, such as vacuum deposition, or a film formation method such as MOCVD, from the viewpoint of preventing damage to the organic layer. If damage occurs to the organic layer, there is a risk that a non-emitting pixel (or a non-emitting sub-pixel) called a "dark spot" will occur due to the generation of leakage current.

[0050] In the light-emitting element of the second embodiment, an intermediate layer (charge generating layer) may be formed between the light-emitting layers. Here, the material constituting the intermediate layer may be at least one material selected from the group consisting of lithium (Li), calcium (Ca), sodium (Na), cesium (Cs), molybdenum oxide (MoO3), vanadium oxide (V2O5) and tungsten oxide (WO3), and may broadly be a metal material, an alloy material, or a metal compound having electrical conductivity. It is necessary to prevent the formation of the intermediate layer from causing damage to the light-emitting layer. The intermediate layer is formed on the light-emitting layer made of an organic material, for example, by a sputtering method. However, if the temperature at which the intermediate layer is formed exceeds, for example, 100°C, the light-emitting layer may be damaged. Therefore, when the intermediate layer is formed by a sputtering method, the material constituting the intermediate layer must be selected from materials that can keep the film formation temperature at 100°C or less. The thickness of the intermediate layer may be, but is not limited to, 2 nm to 10 nm.

[0051] In the light-emitting device of the second aspect, Further, the optical reflecting layer is provided, The light emitted from the light emitting layer can be resonated between the second interface between the second electrode and the organic layer and the light reflecting layer, and a part of the light can be emitted from the second electrode. Here, the light reflecting layer can be arranged below the first electrode, or above the first electrode and below the light emitting layer. The preferred configuration of the light emitting element of the second embodiment can include the light emitting element of the first embodiment. In this case, the maximum light emitting position of the light emitting layer in the light emitting layer formed by stacking a plurality of light emitting layers that emit the same color refers to the average position in the thickness direction of the plurality of light emitting layers. Specifically, the maximum light emitting position is the position corresponding to the average value of the distance between the interface (first interface) between the first electrode and the organic layer and the center in the thickness direction of each light emitting layer. In the configuration in which the light reflecting layer is arranged above the first electrode and below the light emitting layer, the first electrode is not necessarily required to be transparent. In some cases, the formation of the light reflecting layer can be omitted, and the first electrode can serve as the light reflecting layer. In this case, the distance from the maximum light emitting position of the light emitting layer to the first electrode is L1, the optical distance is OL1, and the phase shift amount of the reflected light generated by the first electrode (light reflected by the light reflecting layer) is Φ1.

[0052] In the light-emitting element of the second embodiment, the number of light-emitting layers (NL) is 2 or more, and the upper limit can be, but is not limited to, "4". The number of intermediate layers is (NL-1). In general, as the number of light-emitting layers NL increases, the voltage for driving the light-emitting element increases, so the number of light-emitting layers NL is limited by the voltage for driving the light-emitting element and further by the withstand voltage of the light-emitting element driving unit.

[0053] In the display device (e.g., a projection-type display device) of the present disclosure or the surface-emitting device of the present disclosure, the panel emits monochromatic light (e.g., red light (having an emission spectrum peak in the wavelength range of 620 nm to 750 nm), green light (having an emission spectrum peak in the wavelength range of 495 nm to 570 nm), and blue light (having an emission spectrum peak in the wavelength range of 450 nm to 495 nm)).

[0054] The display device (for example, a projection type display device) of the present disclosure is One red light emitting panel that emits red light; one green light emitting panel that emits green light; and It may be configured with three panels including one blue light emitting panel that emits blue light. In this case, it may further include one blue light emitting panel that emits blue light or one green light emitting panel that emits green light, making it a configuration with four panels. In this case, it may be configured with the four panels arranged in an array (1×4), or it may be configured with the four panels arranged in a 2×2 array.

[0055] The display device of the present disclosure including the above-mentioned preferred embodiments and configurations, specifically, the projection type display device, may further include a projection lens system on the light exit side. An image combining means (e.g., a non-polarizing dichroic prism or a Philips prism) for combining the images emitted from the multiple panels into one image; and The image synthesis means (e.g., a non-polarizing dichroic prism or a Philips prism) can be provided with a projection lens system on the light output side, in which case the three or four panels that make up the projection type display device can be positioned in optimal positions on the image synthesis means.

[0056] It is preferable to use lenses with a high F-number and a large depth of field (DOF) as lenses constituting the projection lens system. It is also preferable that the light incident on the projection lens system or the image synthesis means is parallel to the optical axis of the lens in the paraxial region of the lens. When a lens with a high F-number is used, it is necessary to reduce the divergence angle (direction half-value angle) of the light emitted from the light-emitting element. For this purpose, a microlens member is provided on the light-emitting side of the light-emitting element, or a light guide section is provided, and for example, the resonator structure is optimized.

[0057] Furthermore, in the display device of the present disclosure including the preferred forms and configurations described above, the panel can be not only in a flat form but also in a curved form.

[0058] In the display device of the present disclosure including the preferred embodiment and configuration described above, specifically, in the projection type display device, if there is no means for synthesizing images emitted from multiple panels into one image, in order to properly display (synthesize) the images from the multiple panels, for example, on a screen, the multiple panels may be properly aligned, and at the same time, various corrections such as keystone correction, distortion correction, and magnification correction of the image formed on the screen may be performed using software. In order to properly display (synthesize) the images from the multiple panels, for example, on a screen, the pixels of the images from the multiple panels may not completely overlap, but may partially overlap. There is no problem even if the pixels are misaligned as long as it is below the resolution limit of the observer's eyes.

[0059] In the light-emitting element and the like of the present disclosure including the preferred forms and configurations described above, the light-emitting portion constituting the light-emitting element can be in a form including an organic electroluminescence layer. That is, the panel or surface-emitting device constituting the display device (for example, a projection-type display device) of the present disclosure including the various preferred forms and configurations described above can be in a form consisting of an organic electroluminescence panel (organic EL panel), the light-emitting element can be in a form consisting of an organic electroluminescence element (organic EL element), and the organic layer can be in a form consisting of an organic electroluminescence layer. In addition, the organic EL panel can be a top-emission type (top-emission type) organic EL panel (top-emission type organic EL panel) that emits light from the second substrate, and the light from the organic layer is emitted to the outside through the second substrate.

[0060] Hereinafter, a description will be given of a configuration in which a light-emitting portion constituting a light-emitting element includes an organic electroluminescence layer, and a configuration in which a panel is a top-emission type organic EL panel.

[0061] The light-emitting portion of the light-emitting element is composed of a first electrode, an organic layer, and a second electrode. The first electrode may be in contact with a part of the organic layer, or the organic layer may be in contact with a part of the first electrode. Specifically, the size of the first electrode may be smaller than the organic layer, or the size of the first electrode may be the same as that of the organic layer, but an insulating layer may be formed in a part between the first electrode and the organic layer, or the size of the first electrode may be larger than that of the organic layer. The region where the first electrode and the organic layer are in contact with each other and where an opening is provided in the insulating layer is the light-emitting region. Alternatively, the region where the first electrode and the organic layer are in contact with each other is the light-emitting region.

[0062] The first electrode is provided for each light-emitting element. The organic layer is provided for each light-emitting element, or is provided in common to the light-emitting elements. The second electrode may be a common electrode for a plurality of light-emitting elements. That is, the second electrode may be a so-called solid electrode. The first substrate is disposed below or below the base, and the second substrate is disposed above the second electrode. The light-emitting region is provided on the base. The light-emitting elements are formed on the first substrate side.

[0063] Examples of materials constituting the base include insulating materials such as SiO2, SiN, and SiON. The base can be formed based on a forming method suitable for the material constituting the base, specifically, for example, a known method such as various CVD methods, various coating methods, various PVD methods including sputtering and vacuum deposition, various printing methods such as screen printing, plating, electrodeposition, immersion, and sol-gel methods.

[0064] A light emitting element driving section is provided below or under the base, although this is not limited thereto. The light emitting element driving section is composed of, for example, a transistor (specifically, for example, a MOSFET) formed on a silicon semiconductor substrate constituting the first substrate, or a thin film transistor (TFT) provided on various substrates constituting the first substrate. The transistor or TFT constituting the light emitting element driving section and the first electrode may be connected via a contact hole (contact plug) formed in the base or the like. The light emitting element driving section may have a well-known circuit configuration. The second electrode is connected to the light emitting element driving section at the outer periphery of the organic EL panel via a contact hole (contact plug) formed in the base or the like.

[0065] The first or second substrate can be made of a silicon semiconductor substrate, a high strain point glass substrate, a soda glass (Na2O·CaO·SiO2) substrate, a borosilicate glass (Na2O·B2O3·SiO2) substrate, a forsterite (2MgO·SiO2) substrate, a lead glass (Na2O·PbO·SiO2) substrate, various glass substrates with an insulating material layer formed on the surface, a quartz substrate, a quartz substrate with an insulating material layer formed on the surface, or an organic polymer (having the form of a polymer material such as a flexible plastic film, plastic sheet, or plastic substrate made of a polymer material) exemplified by polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyethersulfone (PES), polyimide, polycarbonate, or polyethylene terephthalate (PET). The materials making up the first and second substrates may be the same or different. However, the substrate that transmits the light from the light emitting element is required to be transparent to the light from the light emitting element.

[0066] The organic layer includes a light-emitting layer made of an organic light-emitting material, and specifically, for example, it can be composed of a laminated structure of a hole transport layer, a light-emitting layer, and an electron transport layer, a laminated structure of a hole transport layer and a light-emitting layer that also serves as an electron transport layer, a laminated structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. Examples of methods for forming the organic layer include physical vapor deposition (PVD) methods such as vacuum deposition; printing methods such as screen printing and inkjet printing; laser transfer methods in which a laser is irradiated to a laminated structure of a laser absorption layer and an organic layer formed on a transfer substrate to separate the organic layer on the laser absorption layer and transfer the organic layer; and various coating methods. When the organic layer is formed based on the vacuum deposition method, for example, a so-called metal mask is used, and a material that has passed through an opening provided in the metal mask is deposited to obtain the organic layer.

[0067] It is preferable that a protective layer (flattening layer) is formed between the second electrode and the second substrate. Examples of materials constituting the protective layer include acrylic resins, SiN, SiON, SiC, amorphous silicon (α-Si), Al2O3, and TiO2. The protective layer can be formed based on known methods such as various CVD methods, various coating methods, various PVD methods including sputtering and vacuum deposition, and various printing methods such as screen printing. In addition, the protective layer can also be formed by ALD (Atomic Layer Deposition). The protective layer may be shared by a plurality of light-emitting elements, or may be provided individually for each light-emitting element. The protective layer and the second substrate are bonded, for example, via a resin layer (sealing resin layer). Examples of materials constituting the resin layer (sealing resin layer) include thermosetting adhesives such as acrylic adhesives, epoxy adhesives, urethane adhesives, silicon adhesives, and cyanoacrylate adhesives, and ultraviolet-curing adhesives.

[0068] An ultraviolet absorbing layer, an anti-contamination layer, a hard coat layer, an antistatic layer, or a protective member (e.g., a cover glass) may be formed on the outermost surface (specifically, the outer surface of the second substrate) from which light is emitted of the organic EL panel.

[0069] In an organic EL panel, a substrate, an insulating layer, and an interlayer insulating layer are formed, and the insulating materials that make up these layers include SiO2, NSG (non-doped silicate glass), BPSG (boron phosphorus silicate glass), PSG, BSG, AsSG, SbSG, PbSG, SOG (spin-on glass), LTO (Low Temperature Oxide, low-temperature CVD-SiO2), low-melting-point glass, glass paste, and other SiO X Examples of the material include: SiON-based materials (materials constituting silicon-based oxide films); SiN-based materials including SiON-based materials; SiOC; SiOF; and SiCN. Alternatively, titanium oxide (TiO2), tantalum oxide (Ta2O5), aluminum oxide (Al2O3), magnesium oxide (MgO), and chromium oxide (CrO x ), zirconium oxide (ZrO2), niobium oxide (Nb2O5), tin oxide (SnO2), vanadium oxide (VO x) and other inorganic insulating materials. Alternatively, various resins such as polyimide resins, epoxy resins, and acrylic resins, and low dielectric constant insulating materials such as SiOCH, organic SOG, and fluorine resins (for example, materials with a dielectric constant k (=ε / ε0) of 3.5 or less, specifically, for example, fluorocarbon, cycloperfluorocarbon polymer, benzocyclobutene, cyclic fluorine resin, polytetrafluoroethylene, amorphous tetrafluoroethylene, polyaryl ether, fluorinated aryl ether, fluorinated polyimide, amorphous carbon, parylene (polyparaxylylene), and fluorinated fullerene) can be mentioned, and Silk (a trademark of The Dow Chemical Co., a coating type low dielectric constant interlayer insulating film material) and Flare (a trademark of Honeywell Electronic Materials Co., a polyaryl ether (PAE)-based material) can also be mentioned. These can be used alone or in appropriate combination. The insulating layer, interlayer insulating layer, and substrate can be formed based on known methods such as various CVD methods, various coating methods, various PVD methods including sputtering and vacuum deposition, various printing methods such as screen printing, plating methods, electrodeposition methods, immersion methods, and sol-gel methods.

[0070] In an organic EL panel, it is desirable that the thickness of the hole transport layer (hole supply layer) and the thickness of the electron transport layer (electron supply layer) are approximately equal. Alternatively, the electron transport layer (electron supply layer) may be thicker than the hole transport layer (hole supply layer), which is necessary for high efficiency at a low driving voltage and allows sufficient electron supply to the light-emitting layer. That is, by disposing the hole transport layer between the first electrode corresponding to the anode electrode and the light-emitting layer and forming it with a thickness thinner than that of the electron transport layer, it is possible to increase the supply of holes. This makes it possible to obtain a carrier balance in which there is no excess or deficiency of holes and electrons and the carrier supply amount is sufficiently large, thereby obtaining high light-emitting efficiency. In addition, since there is no excess or deficiency of holes and electrons, the carrier balance is less likely to be lost, driving deterioration is suppressed, and the light-emitting life can be extended. EXAMPLES

[0071] Example 1 relates to a light-emitting element according to the first aspect of the present disclosure and a display device of the present disclosure, and also relates to a light-emitting element of the first embodiment. A schematic partial cross-sectional view of a panel constituting the light-emitting element of Example 1 and the display device of Example 1 (specifically, a projection-type display device) is shown in FIG. 1, a schematic plan view of a light-emitting section having a plurality of (M×N) light-emitting regions in one light-emitting element is shown in FIG. 2A, and a schematic plan view of a light-emitting section having a plurality of (P×Q) microlens members is shown in FIG. 2B. In addition, a schematic arrangement of four panels constituting the projection-type display device of Example 1 is shown in FIG. 7A and FIG. 7B, and an image projection state of the four panels constituting the projection-type display device of Example 1 shown in FIG. 7A and FIG. 7B is shown in FIG. 8 and FIG. 9. Furthermore, a schematic partial cross-sectional view of the light-emitting element of Example 1 is shown in FIG. 20A.

[0072] In addition, in Fig. 2A, Fig. 3A, Fig. 4A, Fig. 5A, Fig. 6A, Fig. 21A, Fig. 22A and Fig. 23A, one light-emitting region is indicated by a solid line, in Fig. 2B, Fig. 3B, Fig. 4B, Fig. 5B, Fig. 6B, Fig. 21B, Fig. 22B and Fig. 23B, one microlens member is indicated by a solid line and one light-emitting region is indicated by a dashed line, and in Fig. 2A, Fig. 2B, Fig. 3A, Fig. 3B, Fig. 4A, Fig. 4B, Fig. 5A, Fig. 5B, Fig. 6A, Fig. 6B, Fig. 21A, Fig. 21B, Fig. 22A, Fig. 22B, Fig. 23A and Fig. 23B, one light-emitting part is surrounded by a two-dot chain line and an area including one light-emitting region is surrounded by a dotted line. In addition, a center line passing through the center of the light-emitting region is indicated by a white circle, and an optical axis of the microlens member is indicated by a black circle.

[0073] The light-emitting element 10 of the first embodiment is A light emitting unit 30 having a plurality of light emitting regions 30'; and one or more microlens members 60 for controlling the direction of light emitted from each light-emitting region 30'; It is equipped with:

[0074] Specifically, the light-emitting device 10 of Example 1 has the following characteristics: A light-emitting unit 30 having M×N light-emitting regions 30′ (where M and N are integers of 1 or more, excluding the case where M=1 and N=1), P×Q (P=p×M, Q=q×N, and p and q are integers of 1 or more) microlens members 60 for controlling the direction of light emitted from the M×N light-emitting regions 30′; It is equipped with:

[0075] Moreover, the display device of Example 1 or Examples 2 to 6 described later, specifically, the projection type display device (projector), First substrate 11, A second substrate 41, and A plurality of light emitting elements sandwiched between a first substrate 11 and a second substrate 41; The panel has a Each light emitting element is constituted by the light emitting element 10 of Example 1 or Examples 2 to 6 described below.

[0076] The light-emitting device 10 of the first embodiment is a light-emitting device of the first type, The light emitting unit 30 is A first electrode 31 shared in the light emitting region 30'; an organic layer 33 formed on the first electrode 31 and including a light-emitting layer 33A made of an organic light-emitting material; A second electrode 32 formed on the organic layer 33; Equipped with Further, a light reflecting layer 50 is provided below the first electrode 31, The light emitted from the light emitting layer 33A is resonated between the interface between the second electrode 32 and the organic layer 33 and the light reflecting layer 50, so that a part of the light is emitted from the second electrode 32. An insulating layer 28 is formed between the first electrode 31 and the organic layer 33. An opening 29 that defines a light emitting region 30′ is provided in the insulating layer 28. A resonator structure is formed between the surface of the light reflecting layer 50 on the first electrode 31 side (first interface) and the interface between the second electrode 32 and the organic layer 33 (second interface).

[0077] Here, in Example 1, specifically, M=N=3, P=Q=3, and p=q=1. Although not limited thereto, the size of one light emitting section 30 is 7.8 μm×7.8 μm, the size of one opening 29 (one light emitting region 30′) is 2.2 μm×2.2 μm, and the size of the region including one light emitting region 30′ is 2.6 μm×2.6 μm. The planar shape of one opening 29 (one light emitting region 30′) is a square. The planar shape of the microlens member 60 is a square with rounded corners, and the size is, for example, 2.2 μm×2.2 μm. It is preferable that the microlens member 60 is larger than the opening 29 (light emitting region 30′). This is because the light emitted from the light emitting section 30 has a divergence angle, and the microlens member 60 that covers the divergence angle can improve the light collection efficiency. The microlens member 60 is a kind of aspheric lens, and is composed of a plano-convex lens, and has a convex surface in a direction away from the light-emitting region 30'. In the example shown in FIG. 2A and FIG. 2B, the optical axis of the microlens member 60 is located on a center line passing through the center of the light-emitting region 30', and the orthogonal projection image of the light-emitting region 30' is included in the orthogonal projection image of the microlens member 60. Specifically, the orthogonal projection image of one light-emitting region 30' is included in the orthogonal projection image of one microlens member 60. The microlens member 60 has a positive optical power. The multiple light-emitting regions 30' may be arranged at desired positions, and specifically, are regularly arranged. That is, for example, the center of the light-emitting region 30' is arranged on a lattice point of a virtual lattice (square lattice).

[0078] When the planar shape of the light emitting region 130' is a square and the planar shape of the microlens member 160' is a circle, the size of the microlens member 160' for passing the light emitted from the light emitting region 130' is large relative to the light emitting region 130' as shown in FIG. 28B. Alternatively, as shown in FIG. 28C, it is difficult for the microlens member 160' to efficiently collect the light emitted in the corner region of the light emitting region 130'. On the other hand, when the planar shape of the light emitting region 130' is a square and the planar shape of the microlens member 160 is a square, the size of the microlens member 160 for passing the light emitted from the light emitting region 130' is not so large as shown in FIG. 28A, and the microlens member 160 can efficiently collect the light emitted in the corner region of the light emitting region 130'. As described above, when the planar shape of light-emitting region 130' is a square and the planar shape of microlens member 160 is also a square, the area occupied by microlens member 160 can be reduced and light from light-emitting region 130' can be efficiently collected.

[0079] In Example 1 or Examples 2 to 6 described later, the panel constituting the projection display device is made of an organic EL panel, the light emitting element 10 is made of an organic EL element, and the organic layer 33 is made of an organic electroluminescence layer. The organic EL panel is a top emission type organic EL panel that emits light from the second substrate 41, and the light from the organic layer 33 is emitted to the outside through the second substrate 41.

[0080] The projection type display device according to the first embodiment or the second to sixth embodiments described below has the following features: One red light emitting panel (first panel 1R) that emits red light; One green light emitting panel (second panel 1G) that emits green light, and The projection display device is configured with one blue light emitting panel (third panel 1B1) that emits blue light, and further includes one blue light emitting panel (fourth panel 1B2) that emits blue light, and is configured with four panels 1R, 1G, 1B1, and 1B2. A projection lens system 70 is provided on the light emission side of the projection display device. As shown in Figs. 7A and 8, the four panels may be arranged in an array (1 x 4 state), or as shown in Figs. 7B and 9, the four panels may be arranged in a 2 x 2 state. In Figs. 8 and 9, the light rays emitted from the panels are indicated by dotted lines and dashed lines. The number of pixels of the panel is, for example, 1920 x 1080, and one light emitting element 10 constitutes one pixel. The size of the panel is, for example, 10 mm x 10 mm.

[0081] Each panel emits a single color light. The light emitting layer of the light emitting element constituting the first panel 1R is made of a red light emitting layer that emits red light, and the light emitted by the first panel 1R is red light (having an emission spectrum peak in the wavelength range of 620 nm to 750 nm), specifically, a peak wavelength λ R The light emitting layers in the light emitting elements constituting the second panel 1G are made of green light emitting layers that emit green light, and the light emitted by the second panel 1G is green light (having an emission spectrum peak in the wavelength range of 495 nm to 570 nm), specifically, a peak wavelength λ G The light emitting layers in the light emitting elements constituting the third panel 1B1 and the fourth panel 1B2 are made of blue light emitting layers that emit blue light, and the light emitted by the third panel 1B1 and the fourth panel 1B2 is blue light (having an emission spectrum peak in the wavelength range of 450 nm to 495 nm), with a peak wavelength λ B The details are as shown in Table 1 below.

[0082] Here, the light emitting element 10 of Example 1 satisfies the above-mentioned formula (1-1) and formula (1-2). Specifically, m1=m2=1. However, it is not limited to these values, and for example, m1=m2=0 may also be used. The values ​​of the optical path length (OL1+OL2) calculated from formula (1-1) and formula (1-2) are shown in Table 1 below.

[0083] m1m2 peak wavelength λ OL1+OL2 1st Panel 1 1 530nm 280nm Second Panel 1 1 630nm 230nm 3rd Panel / 4th Panel 1 1 440nm 170nm

[0084] The second electrode 32 is covered with a protective layer (flattening layer) 34 made of an acrylic resin. A microlens member 60 is disposed on the light emission side of the organic layer 33. That is, the microlens member 60 made of a known material is formed on the protective layer 34 by a known method. The light emitted from the microlens member 60 is made into parallel light (telecentric light). The protective layer 34 and the microlens member 60 are bonded to the second substrate 41 via a sealing resin layer 35. Examples of materials constituting the sealing resin layer 35 include thermosetting adhesives such as acrylic adhesives, epoxy adhesives, urethane adhesives, silicone adhesives, and cyanoacrylate adhesives, and ultraviolet curing adhesives.

[0085] Inside the base (interlayer insulating layer) 26 made of SiO2 formed based on the CVD method, a light reflecting layer 50 made of Al-Cu, Ag, or Ag-Cu is formed. That is, the base (interlayer insulating layer) 26 is made of two layers, a lower interlayer insulating layer 26A and an upper interlayer insulating layer 26B, and the light reflecting layer 50 is formed between the lower interlayer insulating layer 26A and the upper interlayer insulating layer 26B. When the light reflecting layer 50 is made of silver (Ag), it is preferable to form a base film made of, for example, TiN on the lower interlayer insulating layer 26A in order to control the crystal state of the light reflecting layer 50 to be formed. There is no need to form a TiN layer on the light reflecting layer 50. The lower interlayer insulating layer and the upper interlayer insulating layer may be made of the same material, or may be made of different materials in order to set OL1 to an appropriate value.

[0086] Further, a light emitting element driving section is provided below the base (interlayer insulating layer) 26. The light emitting element driving section can have a known circuit configuration. The light emitting element driving section is composed of a transistor (specifically, a MOSFET) formed on a silicon semiconductor substrate corresponding to the first substrate 11. A transistor 20 made of a MOSFET is composed of a gate insulating layer 22 formed on the first substrate 11, a gate electrode 21 formed on the gate insulating layer 22, a source / drain region 24 formed on the first substrate 11, a channel formation region 23 formed between the source / drain region 24, and an element isolation region 25 surrounding the channel formation region 23 and the source / drain region 24. The transistor 20 and the first electrode 31 are electrically connected via a contact plug 27 provided on the base 26. In the drawing, one transistor 20 is illustrated for one light emitting element driving section.

[0087] The second electrode 32 is connected to a light-emitting element driving section at the outer periphery of the organic EL panel via a contact hole (contact plug) (not shown) formed in the base (interlayer insulating layer) 26. At the outer periphery of the organic EL panel, an auxiliary electrode connected to the second electrode 32 may be provided below the second electrode 32, and the auxiliary electrode may be connected to the light-emitting element driving section.

[0088] The first electrode 31 functions as an anode electrode, and the second electrode 32 functions as a cathode electrode. The first electrode 31 is made of a light-transmitting material, and the second electrode 32 is made of a semi-light-transmitting material. Specifically, the first electrode 31 is made of a transparent conductive material layer, more specifically, ITO or IZO, and the second electrode 32 is made of silver (Ag). The first electrode 31 is formed on the base (interlayer insulating layer) 26 based on a combination of a vacuum deposition method and an etching method. The second electrode 32 is formed by a film formation method in which the energy of the film formation particles is small, particularly a vacuum deposition method, and is not patterned. The organic layer 33 is also not patterned. However, this is not limited to this, and the organic layer 33 may be patterned.

[0089] In Example 1, the organic layer 33 has a laminated structure of, for example, a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer 33A, an electron transport layer (ETL), and an electron injection layer (EIL). In Fig. 20A, the hole injection layer and the hole transport layer are collectively indicated by reference number 33C, and the electron transport layer and the electron injection layer are collectively indicated by reference number 33E.

[0090] The hole injection layer is a layer that enhances hole injection efficiency and also functions as a buffer layer to prevent leakage, and has a thickness of, for example, about 2 nm to 10 nm. The hole injection layer is made of, for example, a hexaazatriphenylene derivative represented by the following formula (A) or formula (B). If the end face of the hole injection layer is in contact with the second electrode, this is the main cause of brightness variation between pixels, leading to a deterioration in display quality.

[0091] TIFF0007601000000001.tif64158

[0092] Here, R 1 ~R 6are each independently a substituent selected from hydrogen, a halogen, a hydroxyl group, an amino group, an arylamino group, a substituted or unsubstituted carbonyl group having 20 or less carbon atoms, a substituted or unsubstituted carbonyl ester group having 20 or less carbon atoms, a substituted or unsubstituted alkyl group having 20 or less carbon atoms, a substituted or unsubstituted alkenyl group having 20 or less carbon atoms, a substituted or unsubstituted alkoxy group having 20 or less carbon atoms, a substituted or unsubstituted aryl group having 30 or less carbon atoms, a substituted or unsubstituted heterocyclic group having 30 or less carbon atoms, a nitrile group, a cyano group, a nitro group, or a silyl group; m (m=1 to 6) may be bonded to each other via a cyclic structure. 1 ~X 6 are each independently a carbon or nitrogen atom.

[0093] TIFF0007601000000002.tif56158

[0094] The hole transport layer is a layer that increases the efficiency of hole transport to the light-emitting layer 33A. In the light-emitting layer 33A, when an electric field is applied, electrons and holes recombine to generate light. The electron transport layer is a layer that increases the efficiency of electron transport to the light-emitting layer 33A, and the electron injection layer is a layer that increases the efficiency of electron injection to the light-emitting layer 33A.

[0095] The hole transport layer is, for example, made of 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) or α-naphthylphenyldiamine (αNPD) having a thickness of about 40 nm.

[0096] In the red light emitting layer, when an electric field is applied, some of the holes injected from the first electrode 31 and some of the electrons injected from the second electrode 32 are recombined to generate red light. Such a red light emitting layer contains at least one material selected from the group consisting of a red light emitting material, a hole transporting material, an electron transporting material, and a positive and negative charge transporting material. The red light emitting material may be a fluorescent material or a phosphorescent material. The red light emitting layer having a thickness of about 5 nm is made of, for example, 4,4-bis(2,2-diphenylvinyl)biphenyl (DPVBi) mixed with 30% by mass of 2,6-bis[(4'-methoxydiphenylamino)styryl]-1,5-dicyanonaphthalene (BSN).

[0097] In the green light-emitting layer, when an electric field is applied, some of the holes injected from the first electrode 31 and some of the electrons injected from the second electrode 32 recombine to generate green light. Such a green light-emitting layer contains, for example, at least one material selected from a green light-emitting material, a hole transport material, an electron transport material, and a positive and negative charge transport material. The green light-emitting material may be a fluorescent material or a phosphorescent material. A green light-emitting layer having a thickness of about 10 nm is made of, for example, DPVBi mixed with 5% by mass of coumarin 6.

[0098] In the blue light emitting layer, when an electric field is applied, some of the holes injected from the first electrode 31 and some of the electrons injected from the second electrode 32 recombine to generate blue light. Such a blue light emitting layer contains at least one material selected from the group consisting of a blue light emitting material, a hole transporting material, an electron transporting material, and a positive and negative charge transporting material. The blue light emitting material may be a fluorescent material or a phosphorescent material. A blue light emitting layer having a thickness of about 30 nm is made of, for example, DPVBi mixed with 2.5 mass % of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi).

[0099] The electron transport layer is about 20 nm thick and is made of, for example, 8-hydroxyquinoline aluminum (Alq3). The electron injection layer is about 0.3 nm thick and is made of, for example, LiF or Li2O.

[0100] However, the materials constituting each layer are merely examples and are not limited to these materials. If the light-emitting layer 33A is made of a phosphorescent material, the brightness can be increased by about 2.5 to 3 times compared to when it is made of a fluorescent material. The light-emitting layer 33A can also be made of a thermally activated delayed fluorescence (TADF) material.

[0101] A method for manufacturing the light emitting device 10 of Example 1 shown in FIG. 1 will be outlined below.

[0102] [Process-100] First, a light emitting element driving section is formed on a silicon semiconductor substrate (first substrate 11) based on a known MOSFET manufacturing process.

[0103] [Process-110] Next, a base (interlayer insulating layer) 26 is formed on the entire surface. Specifically, first, a lower interlayer insulating layer 26A is formed based on a CVD method, a light reflecting layer 50 is formed on the lower interlayer insulating layer 26A based on a sputtering method, the light reflecting layer 50 is patterned based on an etching method, and further, an upper interlayer insulating layer 26B is formed on the lower interlayer insulating layer 26A and the light reflecting layer 50 based on a CVD method. The illustrated interlayer insulating layer 26 is composed of the lower interlayer insulating layer 26A and the upper interlayer insulating layer 26B.

[0104] [Process-120] Then, a contact hole is formed in a portion of the base 26 (including the light reflecting layer 50) located above one of the source / drain regions of the transistor 20 based on photolithography and etching techniques. A metal layer is formed on the base 26 including the contact hole based on, for example, a sputtering method, and then the metal layer is patterned based on photolithography and etching techniques, so that a first electrode 31 can be formed on a portion of the base 26. The first electrodes 31 are separated for each light emitting element. In addition, a contact hole (contact plug) 27 that electrically connects the first electrode 31 and the transistor 20 can be formed in the contact hole. The contact hole (contact plug) 27 is made of, for example, tungsten (W). The light reflecting layer 50 is connected to the contact hole (contact plug) 27.

[0105] [Process-130] Next, for example, based on the CVD method, the insulating layer 28 is formed on the entire surface, and then based on the photolithography technology and the etching technology, the insulating layer 28 is left on the base 26 between the first electrodes 31. In addition, an opening 29 is formed in the insulating layer 28 on the first electrode 31.

[0106] [Process-140] Thereafter, the organic layer 33 is formed on the first electrode 31 and the insulating layer 28 exposed at the bottom of the opening 29 by, for example, a PVD method such as a vacuum deposition method or a sputtering method, or a coating method such as a spin coating method or a die coating method. In some cases, the organic layer 33 may be patterned into a desired shape.

[0107] [Process-150] Next, the second electrode 32 is formed on the entire surface, for example, based on a vacuum deposition method. In some cases, the second electrode 32 may be patterned into a desired shape. In this manner, the organic layer 33 and the second electrode 32 can be formed on the first electrode 31.

[0108] [Process-160] Thereafter, a protective layer 34 is formed on the entire surface based on a coating method, and the top surface of the protective layer 34 is then planarized. Since the protective layer 34 can be formed based on a coating method, there are fewer constraints on the processing process, and a wide range of materials can be selected. Thereafter, a microlens member 60 facing the opening 29 is formed on the protective layer 34. The microlens member 60 may be formed according to a well-known method. That is, for example, a resist material having a square planar shape is provided on the protective layer 34, and the resist material is heat-treated, thereby obtaining a microlens member 60 having a square planar shape with rounded corners.

[0109] [Process-170] Then, the protective layer 34 and the microlens member 60 are bonded to the second substrate 41 by the sealing resin layer 35 made of an acrylic adhesive. In this manner, the light emitting element (organic EL element) 10 shown in FIG.

[0110] FIG. 19 shows a schematic diagram of the light emission state from the light emitting element 10, with the light rays indicated by arrows and the directional half-value angle indicated by "θ half " is expressed as

[0111] Here, in a conventional organic EL element, the light-emitting layer constituting the organic EL element is formed by stacking, for example, a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, and white light is emitted. A red color filter layer is provided to make a red light organic EL element 100R, a green color filter layer is provided to make a green light organic EL element 100G, and a blue color filter layer is provided to make a blue light organic EL element 100B. Such a stacked structure of a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer may be referred to as an "RGB stacked structure" below for convenience. In addition, a resonator structure is adopted, and the values ​​of m1 and m2 in formulas (1-1) and (1-2) are usually "0" or "1", but are not limited to these values.

[0112] In the light emitting element 10 of Example 1, the light intensity on the center line passing through the center of the light emitting section 30 of the light emitting element 10 (the light intensity of the light emitted from the light emitting element 10) is I0, and the light intensity on the center line passing through the center of the light emitting section 30 of the light emitting element 10 not provided with the light reflecting layer 50 (the light intensity of the light emitted from the light emitting element 10) is I conv When I0 / I conv ≧5 Satisfy.

[0113] 30A and 30B show schematic layouts of color filter layers and light-emitting regions in a conventional organic EL element. The length of one side of one pixel having a square planar shape is "a". The area occupied by the red organic EL element 100R, the green organic EL element 100G, and the blue organic EL element 100B is (1 / 3)a 2 In addition, since the red light organic EL element 100R, the green light organic EL element 100G, and the blue light organic EL element 100B are provided spaced apart from one another, the light emitting region is, for example, (1 / 3)×0.75=0.25a 2 When the current flowing through the red organic EL element 100R, the green organic EL element 100G, and the blue organic EL element 100B to emit light is "1.00", the ratio of the current flowing through the green organic EL element 100G is, for example, "0.38". Also, each of the red organic EL element 100R, the green organic EL element 100G, and the blue organic EL element 100B is provided with a color filter layer, and about 10% of the light emitted in the light emitting layer of the organic EL element is absorbed by the color filter layer. Therefore, the luminance efficiency of the conventional green organic EL element 100G is, (Proportion of current flowing through the green organic EL element 100G) x (light transmittance of the color filter layer) x (proportion of the light-emitting area of ​​the green organic EL element 100G in one pixel) =0.38×0.9×0.25a 2 =0.0855×a 2 It becomes.

[0114] On the other hand, in the light emitting element 10 of Example 1, the ratio of the current flowing through the light emitting element 10 is 1.00, a color filter layer is not provided, and the area occupied by the light emitting element 10 in one pixel is a 2 Therefore, the luminance efficiency of the light-emitting element 10 of Example 1 is as follows, compared with the luminance efficiency of the conventional green light organic EL element G: 1 / 0.0855=12 times As described above, the light emitting device 10 of Example 1 can achieve a very high luminance efficiency compared to conventional organic EL devices.

[0115] In addition, in conventional organic EL elements, it is difficult to design the maximum light emission position in the light emitting layer and to control the maximum light emission position during the manufacture of the light emitting layer. Furthermore, the material constituting the blue light emitting layer generally has a short life compared to the materials constituting the red light emitting layer and the green light emitting layer. Therefore, when the light emitting state of the blue light emitting layer deteriorates, the chromaticity point of the white light shifts from the desired chromaticity point, and the panel becomes unusable. That is, the life of a light emitting element having an RGB stacked structure is determined by the material constituting the blue light emitting layer. Furthermore, when an RGB stacked structure is used, there is a risk of unintended interference occurring.

[0116] On the other hand, the projection type display device of Example 1 is composed of four panels, namely, one red light emitting panel that emits red light, one green light emitting panel that emits green light, and two blue light emitting panels that emit blue light, so that the driving current in the blue light emitting panel can be reduced, and as a result, the life of the blue light emitting panel can be extended. Moreover, since the life of the blue light emitting panel can be extended, the range and degree of freedom of selection of materials constituting the light emitting layers of the light emitting elements constituting the red light emitting panel and the green light emitting panel can be increased. And, as described above, in Example 1, it is possible to provide a projection type display device capable of forming an image by a self-luminous type light emitting element, and a light emitting element suitable for use in such a projection type display device or surface emission device. In addition, since the number of layers constituting the organic layer can be reduced compared to conventional organic EL elements, it is possible to reduce the driving voltage of the light emitting element.

[0117] Conventional organic EL elements are Lambertian emitting, and the directivity half-value angle in Lambertian emission is about 70 degrees. Therefore, in order to achieve a wider viewing angle in conventional display devices, that is, to reduce viewing angle dependency, it is preferable to use organic EL elements having Lambertian emission.

[0118] Incidentally, in a projection type display device, as shown in the conceptual diagram of FIG. 29A, when a lens with a small numerical aperture NA (e.g., F=1.8, hereinafter referred to as "lens-A" for convenience) constituting the projection lens system 70 is used, a significant portion of the light (indicated by a small arrow) emitted from the organic EL element 200 does not enter the lens-A. On the other hand, as shown in the conceptual diagram of FIG. 29C, when a lens with a large numerical aperture NA (e.g., F=1.1, hereinafter referred to as "lens-B" for convenience) constituting the projection lens system 70 is used, a significant portion of the light emitted from the organic EL element 200 enters the lens-B. When the lens-B with a large numerical aperture NA is used in this way, the utilization efficiency of the light emitted from the conventional organic EL element 200 is high. However, the lens-B with a large numerical aperture NA is expensive, large, heavy, and has a shallow depth of field (DOF).

[0119] On the other hand, in the light-emitting element 10 of Example 1, the light-emitting section 30 has a plurality of light-emitting regions 30', and the microlens member 60 is provided corresponding to each light-emitting region 30', so that precise and fine control of the direction of the light emitted from the light-emitting element 10 (control of the light ray angle) and control of the parallelism of the light (control of the light ray divergence angle) can be easily and reliably performed, and high brightness can be achieved. Therefore, a high-brightness display device capable of forming an image by the self-luminous type light-emitting element 10 can be provided.

[0120] That is, as shown in Figures 29B and 29D, by providing a microlens member 260, it is possible to control the divergence angle of light emitted from the organic EL element 200. Table 2 shows the half-directional angle of the organic EL element 200, the luminance of the organic EL element 200, and the front illuminance of the display device in the states shown in Figures 29A, 29B, 29C, and 29D. In Table 2, the half-directional angle is referred to as "θ half " (unit: degree), the relative value of the luminance of the organic EL element 200 is indicated as "relative luminance", and the relative value of the illuminance of the display device is indicated as "relative illuminance". Here, relative luminance a is a value obtained by dividing the value of the luminance (luminance of light emitted from the microlens member 260) of the organic EL element 200 provided with the microlens member 260 in the example shown in FIG. 29B by the value of the luminance of the organic EL element 200 in the example shown in FIG. 29A. Moreover, relative luminance b is a value obtained by dividing the value of the luminance (luminance of light emitted from the microlens member 260) of the organic EL element 200 provided with the microlens member 260 in the example shown in FIG. 29D by the value of the luminance of the organic EL element 200 in the example shown in FIG. 29C. Furthermore, relative illuminance A is the value obtained by dividing the illuminance value of the display device in the example shown in FIG. 29B by the illuminance value of the display device in the example shown in FIG. 29A, and relative illuminance B is the value obtained by dividing the illuminance value of the display device in the example shown in FIG. 29D by the illuminance value of the display device in the example shown in FIG. 29C.

[0121] θhalf Relative luminance Relative illuminance Lens-A (see Figure 29A) 60 --- --- Lens-A (see Figure 29B) 19 a=2 A=1.7 Lens-B (see Figure 29C) 60 --- --- Lens-A (see Figure 29B) 19 b=2 B=1.07

[0122] From Table 2, it can be deduced that the brightness of the light-emitting portion can be increased by disposing the microlens member 60 in the light-emitting region. It can also be seen that when the dark lens-A is used, the illuminance can be improved by 1.7 times by disposing the microlens member 60 in the light-emitting region. On the other hand, when the bright lens-B is used, even if the microlens member 60 is disposed in the light-emitting region, the illuminance can only be improved by 1.07 times. As described above, it can be seen that even when the dark lens-A is used, by disposing the microlens member 60 in the light-emitting region, a significant increase in the illuminance of the display device can be achieved compared to when the microlens member 60 is not disposed in the light-emitting region.

[0123] As described above, by disposing a microlens member in the light-emitting region, it becomes possible to use a lens with a high F-number and a large depth of field (DOF) as a lens constituting the projection lens system. In addition, it is preferable that the light incident on the projection lens system or the image synthesis means is parallel to the optical axis of the lens in the paraxial region of the lens, and when a lens with a high F-number is used, it is necessary to reduce the divergence angle (direction half-value angle) of the light emitted from the light-emitting element, and for this purpose, a microlens member is provided on the light-emitting side of the light-emitting element, and the resonator structure is optimized. In particular, since the light emitted from the peripheral part of the panel is incident on the peripheral part of the lens, the optimization of the incidence of such light on the lens constituting the projection lens system can be achieved by providing a microlens member. That is, by using the light-emitting element of Example 1, it becomes possible to use a lens with a high F-number and a large depth of field (DOF). And, even if the values ​​of OL1 and OL2 in the resonator structure vary during the manufacture of the light-emitting element, the influence of the variation in the resonator structure can be suppressed by providing a microlens member.

[0124] In addition, by providing a plurality of microlens members in one light-emitting section, when the microlens member is, for example, composed of a plano-convex lens, the area of ​​the bottom surface of the plano-convex lens can be reduced, so that the height of the top surface of the convex lens surface from the bottom surface of the plano-convex lens can be increased, and the radius of curvature of the convex lens surface can be reduced. Therefore, the optical power of the microlens member can be easily optimized. In addition, by providing a plurality of light-emitting regions in one light-emitting section, it is possible to reduce the amount of light directed upward from the outer edge of the light-emitting section, so that the light-emitting section as a whole can increase its light-emitting efficiency. And if the light-emitting efficiency increases, it is possible to achieve high brightness even by driving the light-emitting element with a low current value, and as a result, it is possible to achieve a long life of the light-emitting element.

[0125] In the first and second modified examples of the first embodiment, schematic plan views of a light emitting section 30 having a plurality of (M×N) light emitting regions 30′ in one light emitting element 10 are shown in FIG. 3A and FIG. 4A, and schematic plan views of a light emitting section 30 having a plurality of (P×Q) microlens members 60 are shown in FIG. 3B and FIG. 4B. In the first modified example of the first embodiment, the microlens member 60 is located at the same position as the microlens member 60 shown in FIG. 2B. Meanwhile, the light emitting region 30′ is located toward the outside of the light emitting section 30, more than the light emitting region 30′ in the light emitting element 10 shown in FIG. 2A. Thus, in the first modified example of the first embodiment, the optical axis of the microlens member 60 is not located on the center line passing through the center of the light emitting region 30′, and this allows the direction of the light emitted from one light emitting section 30 to be a desired direction. In the second modified example of the first embodiment, the light emitting region 30′ is located at the same position as the light emitting region 30′ shown in FIG. 2A. On the other hand, the microlens member 60 is positioned further outward from the light-emitting section 30 than the microlens member 60 in the light-emitting element 10 shown in FIG. 2B. Thus, even in the modified example 2 of the first embodiment, the optical axis of the microlens member 60 is not positioned on the center line passing through the center of the light-emitting region 30', and this allows the direction of light emitted from one light-emitting section 30 to be set to a desired direction. In the modified examples 1 and 2, in one light-emitting section 30, the light emitted from the light-emitting regions 30' located on the periphery is gathered toward the upper side of the light-emitting region 30' located in the center.

[0126] In the modified example 3 of the embodiment 1, FIG. 5A shows a schematic plan view of a light emitting section 30 having a plurality of (M×N) light emitting regions 30' in one light emitting element 10, and FIG. 5B shows a schematic plan view of a light emitting section 30 having a plurality of (P×Q) microlens members 60. In this modified example 3, P=p×M, Q=q×N, M=N=3, p=q=3, and P=Q=9. By setting the values ​​of p and q to 2 or more in this way, that is, by arranging a plurality of microlens members 60 for one light emitting region 30', high accuracy is not required for the alignment between the light emitting region 30' and the microlens member 60. Therefore, the manufacturing process of the display device can be simplified, and the manufacturing cost of the display device can be reduced.

[0127] In variant 4 of Example 1, one light-emitting section 30 has a regular hexagonal planar shape, and six light-emitting regions 30' are provided in one light-emitting section 30 (see the schematic plan view of Figure 6A), and six microlens members 60 are provided opposite the six light-emitting regions 30' (see the schematic plan view of Figure 6B).

[0128] The microlens member 60 may be configured to have negative optical power, which makes it possible to provide a wide-angle display device. Alternatively, by reversing the arrangement of the microlens member 60 and the light-emitting region 30' from those in Modifications 1 and 2, a configuration may be achieved in which the light emitted from the light-emitting region 30' in one light-emitting unit 30 diverges in a direction away from the upper side of the light-emitting region 30' located at the center.

[0129] Fig. 10 shows a schematic partial cross-sectional view of the light-emitting element 10 of Example 1 and Modification 5 of the panel constituting the projection display device of Example 1. In the light-emitting element 10 of Example 1 shown in Fig. 1, the light-reflecting layer 50 is connected to the contact hole (contact plug) 27, but in the light-emitting element 10 of Modification 5, the light-reflecting layer 50 is not connected to the contact hole (contact plug) 27.

[0130] 11 shows a schematic partial cross-sectional view of a sixth modification of the panel constituting the light-emitting element 10 of Example 1 and the projection-type display device of Example 1. In this sixth modification, the first electrode 31 and the light-reflecting layer 50 are surrounded by a light-shielding portion or a light-reflecting portion (reflector portion). A light-shielding portion 51 is provided between the light-emitting elements 10, or a light-reflecting portion 51 is provided. The light-shielding portion 51 or the light-reflecting portion 51 is connected to the light-reflecting layer 50 and the first electrode 31.

[0131] 12 shows a schematic partial cross-sectional view of a seventh modification of the light-emitting element 10 of Example 1 and the panel constituting the projection-type display device of Example 1, and FIG. 13 shows a schematic plan view of the metal thin film filter layer in the light-emitting element 10 of Example 1 and the panel constituting the projection-type display device of Example 1. In this seventh modification, a metal thin film filter layer 52 is further formed between the first electrode 31 and the light-reflecting layer 50. The metal thin film filter layer 52 is made of, for example, a gold (Au) thin film or a silver (Ag) thin film, and a large number of holes 53 of about 200 nm are formed in these thin films and are arranged two-dimensionally.

[0132] 14 shows a schematic partial cross-sectional view of an eighth modification of the light-emitting element 10 of the embodiment 1 and the panel constituting the projection display device of the embodiment 1. In this eighth modification, a light absorbing layer (black matrix layer) 54 is formed between the microlens members 60 of adjacent light-emitting elements 10. This can reliably prevent partial overlapping of unit pixels.

[0133] A conceptual diagram of a ninth modification of the panel constituting the projection display device of the first embodiment is shown in Fig. 15. In this modification, an image synthesis means 71 (specifically, a non-polarizing dichroic prism 72) that synthesizes images emitted from a plurality of (specifically, three) panels 1R, 1G, and 1B into one image, and a projection lens system 70 is provided on the light exit side of the image synthesis means 71. Alternatively, conceptual diagrams of a 10th modification of the panel constituting the projection display device of the first embodiment are shown in Fig. 16A and Fig. 16B. In this modification, an image synthesis means 71 (specifically, a Phillips prism 73) that synthesizes images emitted from a plurality of (specifically, three or four) panels 1R, 1G, and 1B (see Fig. 16A) or panels 1R, 1G, 1B1, and 1B2 (see Fig. 16B) into one image, and a projection lens system 70 is provided on the light exit side of the image synthesis means 71. In the Philips prism 73, an air gap is provided between the two prisms, but it may be gapless without an air gap. Here, it is preferable that the light incident on the image synthesis means 71 is parallel light, so that bright light can be incident on the image synthesis means 71, and three or four panels can be integrated into one module.

[0134] FIG. 17 is a schematic partial cross-sectional view of a modified example-11 of the panel constituting the light-emitting element 10 of Example 1 and the projection display device of Example 1. In the example shown in FIG. 1, the microlens member 60 is a kind of aspheric lens, is composed of a plano-convex lens, and has a convex surface in a direction away from the light-emitting region 30'. On the other hand, in the modified example-11 shown in FIG. 17, the microlens member 60 is a kind of aspheric lens, is composed of a plano-convex lens, and has a convex surface in a direction toward the light-emitting region 30'. Specifically, a base layer 36 is formed on the inner surface of the second substrate 41, and the microlens member 60 is formed on the base layer 36. The microlens member 60, the base layer 36, and the protective layer 34 are bonded together by a sealing resin layer 35.

[0135] A second microlens member 60' for controlling the traveling direction of light emitted from the microlens member 60 may be disposed above the microlens member 60. The second microlens member 60' may be disposed opposite the microlens member 60, that is, P×Q second microlens members 60' may be disposed for P×Q microlens members 60, or one second microlens member 60' may be disposed for P×Q microlens members 60. Specifically, a combination of the examples shown in FIG. 1 and FIG. 17 is shown in FIG. 18 as a conceptual diagram of Modification 12 of the panel constituting the projection type display device of the first embodiment. EXAMPLES

[0136] Example 2 relates to a light-emitting device according to the second aspect of the present disclosure, and also relates to the light-emitting device of the first embodiment. In Example 2, a schematic plan view of a light-emitting section having one light-emitting region in one light-emitting device is shown in Fig. 21A, and a schematic plan view of a light-emitting section having multiple (M x N) microlens members is shown in Fig. 21B.

[0137] The light-emitting element of Example 2 is A light emitting section 30 having one light emitting region 30'; and A plurality of microlens members 60 for controlling the direction of light emitted from one light-emitting region 30'; Specifically, the light emitting device of Example 2 has the following features: A light emitting section 30 having one light emitting region 30'; and P×Q microlens members 60 (where P and Q are integers equal to or greater than 1, excluding the case where P=1 and Q=1) for controlling the direction of travel of light emitted from one light-emitting region 30′; It is equipped with:

[0138] In this way, in the light-emitting device of Example 2, since a plurality of microlens members are provided in the light-emitting section, it is possible to easily and reliably perform precise and fine control of the direction of light emitted from the light-emitting device (control of the light ray angle) and control of the parallelism of the light (control of the light ray divergence angle), and to achieve high brightness. Therefore, it is possible to provide a high-brightness display device capable of forming an image by a self-luminous type light-emitting device.

[0139] Furthermore, when the optical axis of the microlens member 60 is located on the center line passing through the center of the light-emitting region 30', the orthogonal projection image of one light-emitting region 30' can be contained within the orthogonal projection image of the entire P × Q microlens members 60.

[0140] Except for the above points, the configurations and structures of the light-emitting element and the display device of Example 2 can be substantially similar to those of the light-emitting element and the display device of Example 1, so detailed description will be omitted. EXAMPLES

[0141] Example 3 relates to a light-emitting device according to the third aspect of the present disclosure, and also relates to the light-emitting device of the first embodiment. In Example 3, a schematic plan view of a light-emitting section having a plurality of (M×N) light-emitting regions in one light-emitting device is shown in Fig. 22A, and a schematic plan view of a light-emitting section having one or a plurality of (P×Q) microlens members is shown in Fig. 22B.

[0142] The light-emitting element of Example 3 is A light emitting unit 30 having a plurality of light emitting regions 30'; and One or more microlens members 60 (one microlens member 60 in the illustrated example) for controlling the direction of light emitted from the plurality of light-emitting regions 30′; Specifically, the light emitting device of Example 3 has the following features: A light-emitting unit 30 having M×N light-emitting regions 30′ (where M and N are integers of 1 or more, excluding the case where M=1 and N=1), A microlens member 60 for controlling the direction of light emitted from the M×N light emitting regions 30′; It is equipped with:

[0143] In this way, in the light-emitting element 10 of Example 3, since the light-emitting section 30 has a plurality of light-emitting regions, it is possible to easily and reliably perform precise and fine control of the direction of the light emitted from the light-emitting element (control of the light ray angle) and control of the parallelism of the light (control of the light ray divergence angle), and to achieve high brightness. Therefore, it is possible to provide a high-brightness display device capable of forming an image by a self-luminous type light-emitting element.

[0144] Furthermore, when the optical axis of the microlens member 60 is located on the center line passing through the center of the light-emitting region 30', the orthogonal projection image of the M x N light-emitting regions 30' can be contained within the orthogonal projection image of a single microlens member 60.

[0145] Except for the above points, the configurations and structures of the light-emitting element and the display device of Example 3 can be substantially similar to those of the light-emitting element and the display device of Example 1, so detailed description will be omitted.

[0146] In Modification 1 of Example 3, a schematic plan view of a light-emitting section 30 having a plurality of (M×N) light-emitting regions 30′ in one light-emitting element is shown in FIG. 23A, and a schematic plan view of a light-emitting section 30 having three microlens members 60 is shown in FIG. 23B. In Modification 1 of Example 3, A light emitting unit 30 having a plurality of light emitting regions 30'; and One or more microlens members 60 (three microlens members 60 in the illustrated example) for controlling the direction of light emitted from the plurality of light-emitting regions 30'; That is, the number of the microlens members 60 can be P'×Q' (where P'=M / p', Q'=N / q', and p' and q' are integers equal to or greater than 1), where M=N=3, P'=1, p'=3, Q'=3, and q'=1. EXAMPLES

[0147] Example 4 relates to a light-emitting element according to the fourth aspect of the present disclosure, and also relates to the light-emitting element of the first embodiment. A schematic partial cross-sectional view of the light-emitting element of Example 4 and one light-emitting portion of a panel constituting the projection-type display device of Example 4 is shown in FIG.

[0148] The light-emitting element of Example 4 is A light emitting unit 30 having a plurality of light emitting regions 30'; and a light guide section 61 for controlling the direction of light emitted from each light emitting region 30'; Equipped with The light emitting region 30′ has a convex shape in a direction away from the light guiding section 61. Specifically, the light emitting element of Example 4 has A light-emitting unit 30 having M×N light-emitting regions 30′ (where M and N are integers of 1 or more, excluding the case where M=1 and N=1), a light guide section 61 for controlling the direction of light emitted from each light emitting region 30'; Equipped with Light-emitting region 30 ′ has a convex shape in a direction away from light-guiding portion 61 .

[0149] Specifically, one light guide section 61 is provided for one light emitting region 30'. In the illustrated example, M=N=3. The refractive index value of the material constituting the second electrode 32 is higher than the refractive index value of the material 37 filling the inside (inside) of the light guide section 61. Therefore, the light emitting region 30' has a positive optical power. In addition, the refractive index value of the material 37 filling the inside (inside) of the light guide section 61 is higher than the refractive index value of the protective layer 34 surrounding the light guide section 61. Therefore, at least a part of the light emitted from the light emitting region 30' is reflected in the light guide section 61. The material 37 and the protective layer 34 are bonded to the second substrate 41 (not shown) via the sealing resin layer 35 (not shown). In addition, the orthogonal projection image of the light emitting region 30' is included in the orthogonal projection image of the bottom of the light guide section 61. Furthermore, the axis AX2 at the bottom of the light guide section 61 is located on the center line AX1 passing through the center of the light emitting region 30'. The inner surface of the light guiding section 61 (the surface of the light guiding section 61 on which the light emitted from the light emitting region 30' impinges) when cut along a virtual plane perpendicular to the normal direction of the light emitting region 30' may be parallel or non-parallel to the normal direction of the light emitting region 30'. In the illustrated example, it is parallel to the normal direction. However, this is not limited thereto, and the inner surface of the light guiding section 61 may be forward tapered (a shape widening toward the second substrate 41) or inverse tapered (a shape narrowing toward the second substrate 41) when the light emitting region 30' is used as a reference, but from the viewpoint of light collection, it is preferable that it be inverse tapered (a shape narrowing toward the second substrate 41).

[0150] As described above, in the light-emitting element of Example 4, the light-emitting section has a plurality of light-emitting regions, and the light-guiding section 61 is provided corresponding to each light-emitting region 30', so that precise and fine control of the direction of the light emitted from the light-emitting element (control of the light ray angle) and control of the parallelism of the light (control of the light ray divergence angle) can be easily and reliably performed, and high brightness can be achieved. Therefore, a high-brightness display device capable of forming an image by a self-luminous type light-emitting element can be provided.

[0151] Except for the above points, the configurations and structures of the light-emitting element and the display device of Example 4 can be substantially similar to the configurations and structures of the light-emitting element and the display device of Examples 1 to 3, so detailed description will be omitted.

[0152] 25 is a schematic partial cross-sectional view of a first modification of the panel constituting the light-emitting element and the projection-type display device of Example 4, which has a structure in which a plurality of light-guiding sections 61 are stacked, and the axes of the plurality of light-guiding sections 61 may not be aligned in the same straight line. This makes it possible to control the traveling direction of light emitted from the final stage of the light-guiding section 61.

[0153] 26 shows a schematic partial cross-sectional view of a modified example 2 of the panel constituting the light-emitting element of Example 4 and the projection display device of Example 4, and the axis AX2 of the light-guiding section 61 may not be located on the center line AX1 passing through the center of the light-emitting region 30'. Specifically, the plurality of light-emitting regions 30' may be regularly arranged (specifically, for example, the center of the light-emitting region 30' may be located on a lattice point of a virtual lattice), and the axis of the light-guiding section 61 may not be located on this lattice point, or the plurality of light-emitting regions 30' may not be regularly arranged (specifically, for example, the center of the light-emitting region 30' may not be located on a lattice point of a virtual lattice), and the axis of the light-guiding section 61 may be located on this lattice point, or a combination of these configurations may be used.

[0154] In addition, in the illustrated example, a configuration is given in which P×Q light guiding sections 61 are provided for a light emitting section 30 having M×N light emitting regions 30', but it is also possible to have a configuration in which, for example, one light guiding section 61 is provided for a light emitting section 30 having M×N light emitting regions 30'.

[0155] The configuration and structure of the light-emitting region 30' in Example 4 described above can be applied to Examples 1 to 3, and by arranging the light-guiding section 61 in Example 4 on the light-emitting side of the microlens member 60 in Examples 1 to 3, the light-guiding section 61 can control the traveling direction of the light emitted from the microlens member 60. EXAMPLES

[0156] Example 5 relates to the light-emitting device according to the first to fourth aspects of the present disclosure, and also relates to the light-emitting device of the second embodiment. A schematic partial cross-sectional view of the light-emitting device of Example 5 is shown in Fig. 20B, and a schematic partial cross-sectional view of the light-emitting device of Example 5 and a panel constituting the projection type display device of Example 5 is shown in Fig. 27.

[0157] In the light-emitting device 10′ of Example 5, The light emitting unit 30 is A first electrode 31 shared in the light emitting region 30'; an organic layer 33 formed on the first electrode 31 and including a light-emitting layer 33A made of an organic light-emitting material; A second electrode 32 formed on the organic layer 33; Equipped with The light-emitting layer 33A is formed by laminating a plurality of light-emitting layers 33A and 33B (specifically, in the fifth embodiment, NL=2 layers) that emit light of the same color, An insulating layer 28 is formed between the first electrode 31 and the organic layer 33. The insulating layer 28 has an opening 29 that defines a light emitting region 30'.

[0158] In the display device (for example, a projection display device) of Example 5, the light-emitting layer is formed by stacking a plurality of light-emitting layers 33A, 33B that emit the same color. The light-emitting element does not have a resonator structure. Except for these points, the configurations and structures of the light-emitting element, display device, and projection display device of Example 5 can be substantially similar to the configurations and structures of the light-emitting element, display device, and projection display device of Examples 1 to 4, so detailed description will be omitted.

[0159] Here, an intermediate layer (charge generating layer) 33D made of, for example, Li is formed between the light emitting layer 33A and the light emitting layer 33B by a sputtering method. The thickness of the intermediate layer 33D is, for example, 2 nm to 10 nm. The multiple light emitting layers 33A and 33B have the same composition.

[0160] Conventional organic EL elements are Lambertian emitters. On the other hand, in the light-emitting device 10 of Example 5, the directivity half angle θ half It was found that the directivity half angle in Lambertian radiation of the conventional organic EL element was 25 degrees or less. As described above, the directivity half angle in Lambertian radiation of the conventional organic EL element was about 70 degrees. Thus, it was found that the light emitted from the light emitting element of Example 5 was more directional than the conventional organic EL element, or was close to parallel light.

[0161] In the light-emitting device of Example 5, the value of θ can be made smaller than that of the conventional organic EL device. Therefore, the electric field intensity E t In other words, the light intensity from the light emitting element can be increased.

[0162] In addition, in the light emitting device 10 of Example 5, the full width at half maximum (FWHM) value of the light emitted from the light emitting device is 30 nm or less. That is, the light emitting device of Example 5 has a sharper emission spectrum than conventional organic EL devices.

[0163] Moreover, in Example 5, the light-emitting layer is formed by stacking a plurality of light-emitting layers that emit the same color. Therefore, in a panel constituted by light-emitting elements having a light-emitting layer formed by stacking a plurality of light-emitting layers that emit the same color, the light intensity can be approximately doubled compared to the panel of Example 1 constituted by light-emitting elements having one light-emitting layer. That is, the luminance efficiency of the light-emitting element of Example 5 is approximately 24 times (=2×12 times) the luminance efficiency of a conventional green light organic EL element. EXAMPLES

[0164] The panel in the projection type display device of Example 6 is a combination of the panels in the projection type display devices of Examples 1 to 4 and the panel in the projection type display device of Example 5. That is, the light-emitting element in the projection type display device (projector) of Example 6 is configured by combining the light-emitting element of the first form and the light-emitting element of the second form.

[0165] That is, in the sixth embodiment, the light-emitting layer in the light-emitting element constituting the panel is formed by stacking a plurality of light-emitting layers 33A and 33B that emit the same color. Moreover, the light-emitting element of the sixth embodiment further includes a light-reflecting layer 50, and light emitted from the light-emitting layer is resonated between the second interface between the second electrode 32 and the organic layer 33 and the light-reflecting layer 50, so that a part of the light is emitted from the second electrode 32. The light-reflecting layer 50 may be disposed below the first electrode 31 as in the first embodiment, or may be disposed above the first electrode 31 and below the light-emitting layer 33A. Alternatively, the light-reflecting layer 50 may be omitted, and the first electrode 31 may also serve as the light-reflecting layer 50. Such a resonator structure can be substantially the same as the resonator structure described in the first embodiment.

[0166] When a resonator structure is formed between the light reflecting layer 50 and the second interface as described in the first embodiment, the Fabry-Perot optical resonator has a light reflectance of the light reflecting layer 50 of r F , light transmittance t F and the light reflectance of the second electrode 32 is r B , light transmittance t B and the electric field intensity of the light emitted in the light-emitting layer 33A is E i , the electric field intensity of the light emitted from the second electrode 32 is E t Then, |E t / E i | 2 =t F 2 / {1+(a·r F ) 2 +2a·r F cos(δ)} (2) where a is the absolute value of the light intensity, λ is the maximum peak wavelength of the spectrum of the light generated in the light emitting layer 33A, L is the length of the resonator, and θ is the angle of incidence of the light on the second interface when the light resonating in the resonator collides with the second interface. δ = 2π(2nL / λ)cos(θ) (3) Here, n is a positive integer, and L is the value of the optical path length (OL1+OL2).

[0167] In addition, the full width at half maximum (FWHM) value of the light emitted from the light-emitting element is, when c is the speed of light, FWHM = c(1-r F ) / {2πL(r F ) 1 / 2} (4) In the sixth embodiment, the values ​​of m1 and m2 are each set to "1." That is, the value of the cavity length L is set to a large value. Therefore, the FWHM value expressed by the formula (4) can be set to a smaller value than that of the conventional organic EL element.

[0168] The light-emitting element of Example 6 also satisfies the above-mentioned formula (1-1) and formula (1-2). Specifically, as described above, m1=m2=1. However, this is not limited to these values, and for example, m1=m2=0 is also possible. The values ​​of the optical path length (OL1+OL2) calculated from formula (1-1) and formula (1-2) when m1=m2=0 are shown in Table 3 below. The peak wavelength λ is as shown in Table 1.

[0169] m1m2OL1+OL2 1st Panel 0 0 110nm Second Panel 0 0 70~90nm 3rd Panel / 4th Panel 0 0 60nm

[0170] Except for the above points, the configurations and structures of the light-emitting element, display device, and projection-type display device of Example 6 can be substantially similar to the configurations and structures of the light-emitting element, display device, and projection-type display device of Examples 1 to 4 and Example 5, so detailed explanations are omitted.

[0171] The present disclosure has been described above based on preferred embodiments, but the present disclosure is not limited to these embodiments. The configurations and structures of the light-emitting elements, display devices, projection display devices, and panels described in the embodiments are examples and can be changed as appropriate, and the manufacturing method of the light-emitting elements is also examples and can be changed as appropriate. The panel can be not only flat, but also curved. In addition, a display device or a projection display device can be configured from a panel equipped with light-emitting elements that emit light other than visible light, for example, infrared light, or a combination of such a panel and a panel equipped with light-emitting elements that emit visible light.

[0172] The display device and projection type display device of the present disclosure, including the various preferred embodiments described above, can also be incorporated into, for example, personal computers, mobile phones, PDAs (personal digital assistants), game devices, wristwatches, bracelets, finger rings, etc.

[0173] A surface light emitting device can be constructed from the light emitting elements and panels described in the embodiments. That is, the surface light emitting device is First substrate 11, A second substrate 41, and A plurality of light emitting elements sandwiched between a first substrate 11 and a second substrate 41; The panel has a Each of the light-emitting elements is composed of the light-emitting elements 10, 10' of Examples 1 to 6. Such a surface light-emitting device can be used to configure, for example, billboards, posters, bulletin boards such as blackboards, electronic advertisements, and electronic POPs, and can also be used to configure various lighting devices including various backlight devices and surface light source devices.

[0174] By optimizing the position of the microlens member or light guide member relative to the light emitting unit or light emitting region, the image emitted from the display device or the light flux of the surface emitting device can be emitted in a desired direction, such as an oblique direction, instead of in front of the display device. This allows the observer to observe a bright, clear image in the desired direction. Alternatively, by optimizing the specifications of the microlens member or light guide member relative to the light emitting unit or light emitting region, the image emitted from the display device or the light flux of the surface emitting device can be diverged.

[0175] In order to prevent light emitted from a certain light-emitting element from penetrating into a light-emitting element adjacent to the certain light-emitting element and causing optical crosstalk, a light-shielding region may be provided between the light-emitting elements. That is, a groove may be formed between the light-emitting elements, and the groove may be filled with a light-shielding material to form a light-shielding region. By providing a light-shielding region in this manner, the rate at which light emitted from a certain light-emitting element penetrates into an adjacent light-emitting element can be reduced, and partial overlap of unit pixels can be reliably suppressed.

[0176] The projection type display device of the embodiment can be applied to various technical fields. For example, when applied to a display device constituting a head mounted display (HMD), the display device: A frame to be worn on the observer's head; and an image display device attached to a frame; Equipped with The image display device includes: An image forming apparatus including a projection type display device having the light emitting device according to any one of Examples 1 to 6, and an optical device into which light emitted from the image forming apparatus is incident and into which the light is emitted; Equipped with The optical device is a light guide plate through which light incident from an image forming device propagates through the inside thereof by total reflection and is then emitted toward an observer; a first deflection means for deflecting light incident on the light guide plate such that the light incident on the light guide plate is totally reflected inside the light guide plate; and a second deflection means for deflecting the light propagated inside the light guide plate by total reflection a plurality of times so as to emit the light propagated inside the light guide plate by total reflection from the light guide plate; Alternatively, the projection display device having the light emitting elements according to the first to sixth embodiments can be applied to a retinal projection display based on Maxwellian vision, which displays an image by directly projecting an image (light beam) onto the retina of an observer, specifically, to an image forming device in a retinal projection head mounted display.

[0177] Alternatively, the present invention can be applied to a light source (projector) for structured light. In this case, the 3D sensing device is An image forming apparatus including a projection type display device having the light emitting device according to any one of Examples 1 to 6, and an imaging device that captures an image projected onto an object by the projection type display device; It is equipped with:

[0178] Alternatively, the projection-type display device having the light-emitting elements according to the first to sixth embodiments may be configured as a wearable device such as a wristwatch, a bracelet, or a finger ring.

[0179] The present disclosure may also be configured as follows. [A01] Light-emitting element: First aspect A light emitting section having a plurality of light emitting regions; and One or more microlens members for controlling the direction of light emitted from each light-emitting region; A light-emitting element comprising: [A02] Light-emitting element: second aspect A light emitting section having one light emitting region; and A plurality of microlens members for controlling the direction of light emitted from one light-emitting region; A light-emitting element comprising: [A03] Light-emitting element: third aspect A light emitting section having a plurality of light emitting regions; and one or more microlens members for controlling the direction of light emitted from the plurality of light-emitting regions; A light-emitting element comprising: [A04] The light-emitting element according to [A01], wherein the optical axis of the microlens member is not positioned on a center line passing through the center of the light-emitting region. [A05] The light-emitting device according to any one of [A01] to [A04], wherein the planar shape of the microlens member is a rectangle or a square with rounded corners. [A06] A light-emitting element described in any one of [A01] to [A05], wherein when the optical axis of the microlens member is positioned on a center line passing through the center of the light-emitting region, the orthogonal projection image of the light-emitting region is included within the orthogonal projection image of the microlens member. [A07] The light-emitting element according to any one of [A01] to [A06], further comprising a second microlens member that controls the traveling direction of light emitted from the microlens member. [A08] The light-emitting device according to any one of [A01] to [A07], further comprising a light-guiding section that controls the traveling direction of light emitted from the microlens member. [A09] A structure in which multiple light guides are stacked, The light-emitting element according to [A08], wherein the axes of the plurality of light-guiding portions are not aligned in the same straight line. [A10] The light-emitting part is a first electrode shared in the light emitting region; an organic layer formed on the first electrode and including a light-emitting layer made of an organic light-emitting material; and a second electrode formed on the organic layer; Equipped with Further, a light reflective layer is provided below the first electrode, light emitted from the light-emitting layer is resonated between the interface between the second electrode and the organic layer and the light-reflecting layer, causing a portion of the light to be emitted from the second electrode; An insulating layer is formed between the first electrode and the organic layer, The light-emitting device according to any one of [A01] to [A09], wherein the insulating layer has an opening that defines a light-emitting region. [A11] The light-emitting part is a first electrode shared in the light emitting region; an organic layer formed on the first electrode and including a light-emitting layer made of an organic light-emitting material; and a second electrode formed on the organic layer; Equipped with The light-emitting layer is formed by laminating a plurality of light-emitting layers that emit light of the same color, An insulating layer is formed between the first electrode and the organic layer, The light-emitting device according to any one of [A01] to [A09], wherein the insulating layer has an opening that defines a light-emitting region. [A12] The light-emitting element according to any one of [A01] to [A11], wherein the microlens member has a positive optical power. [A13] The light-emitting element according to any one of [A01] to [A12], wherein the light-emitting region has a convex shape in a direction away from the microlens member. [A14] The light-emitting element according to any one of [A01] to [A11], wherein the microlens member has negative optical power. [A15] Light-emitting element: fourth aspect A light emitting section having a plurality of light emitting regions; and a light guide section for controlling the direction of light emitted from each light-emitting region; Equipped with The light emitting element has a light emitting region that has a convex shape in a direction away from the light guiding portion. [A16] The light-emitting element according to [A15], wherein the light-emitting region has positive optical power. [A17] A structure in which a plurality of light guiding parts are stacked, The light-emitting element according to [A15] or [A16], wherein the axes of the plurality of light-guiding portions are not aligned in the same straight line. [B01] A light-emitting element according to [A10] or any one of [A12] to [A14] citing [A10], which satisfies the following formula (1-1) and formula (1-2), where OL1 is the optical distance from the maximum light-emitting position of the light-emitting layer to the light-reflecting layer, OL2 is the optical distance from the maximum light-emitting position of the light-emitting layer to the interface, and m1 and m2 are integers. 0.7{-Φ1 / (2π)+m1}≦2×OL1 / λ≦1.2{-Φ1 / (2π)+m1} (1-1) 0.7{-Φ2 / (2π)+m2}≦2×OL2 / λ≦1.2{-Φ2 / (2π)+m2} (1-2) Where: λ : The maximum peak wavelength of the spectrum of the light generated in the light-emitting layer (or the desired wavelength of the light generated in the light-emitting layer) Φ1: Phase shift amount (unit: radian) of reflected light (light reflected by the light reflecting layer) generated by the light reflecting layer. However, -2π<Φ1≦0 Φ2: Phase shift of the reflected light (light reflected at the interface) (unit: radian). However, -2π<Φ2≦0 It is. [B02] The light-emitting element according to [B01], wherein m1≧1 and m2≧1 are satisfied. [B03] The light-emitting element according to [A10], or any one of [A12] to [A14] citing [A10], or [B01], or [B02], further comprising a metal thin film filter layer between the first electrode and the light-reflecting layer. [B04] The light-emitting element according to [A10], or any one of [A12] to [A14] citing [A10], or any one of [B01] to [B03], in which the first electrode and the light-reflecting layer are surrounded by a light-shielding portion or a light-reflecting portion. [B05] The light-emitting element according to [A10], or any one of [A12] to [A14] quoting [A10], or any one of [B01] to [B04], wherein the first electrode is made of a light-transmitting material and the second electrode is made of a semi-light-transmitting material. [B06] The first electrode is made of ITO or IZO, The light-emitting device according to [B05], wherein the second electrode is made of at least one material selected from the group consisting of Ag, Ag--Mg, Ag--Nd--Cu, Au, Ag--Cu, Al, and Al--Cu. [C01] The light-emitting device according to [A11] or any one of [A12] to [A14] citing [A11], wherein an intermediate layer is formed between light-emitting layers. [C02] The light-emitting element according to [C01], wherein the intermediate layer is made of at least one material selected from the group consisting of lithium (Li), calcium (Ca), sodium (Na), cesium (Cs), molybdenum oxide (MoO3), vanadium oxide (V2O5) and tungsten oxide (WO3). [C03] The light-emitting device according to [A11], or any one of [A12] to [A14] citing [A11], or [C01] or [C02], wherein the plurality of light-emitting layers have the same composition. [C04] Further, the optical element has a light-reflecting layer, The light-emitting device according to [A11], or any one of [A12] to [A14] citing [A11], or any one of [C01] to [C03], wherein light emitted from an emission layer is resonated between an interface between the second electrode and the organic layer and a light reflecting layer, so that a part of the light is emitted from the second electrode. [C05] The light-emitting device according to [C04], wherein the light-reflecting layer is disposed below the first electrode. [C06] The light-emitting device according to [C04], wherein the light-reflecting layer is disposed above the first electrode and below the light-emitting layer. [C07] The light-emitting element according to any one of [C04] to [C06], wherein the optical distance from the maximum light-emitting position of the light-emitting layer to the light-reflecting layer is OL1, the optical distance from the maximum light-emitting position of the light-emitting layer to the interface is OL2, and m1 and m2 are integers, the following formulas (1-1) and (1-2) are satisfied. 0.7{-Φ1 / (2π)+m1}≦2×OL1 / λ≦1.2{-Φ1 / (2π)+m1} (1-1) 0.7{-Φ2 / (2π)+m2}≦2×OL2 / λ≦1.2{-Φ2 / (2π)+m2} (1-2) Where: λ : The maximum peak wavelength of the spectrum of the light generated in the light-emitting layer (or the desired wavelength of the light generated in the light-emitting layer) Φ1: Phase shift amount (unit: radian) of reflected light (light reflected by the light reflecting layer) generated by the light reflecting layer. However, -2π<Φ1≦0 Φ2: Phase shift of the reflected light (light reflected at the interface) (unit: radian). However, -2π<Φ2≦0 It is. [C08] The light-emitting element according to [C07], wherein m1≧1 and m2≧1 are satisfied. [C09] The light-emitting device according to [C05], further comprising a metal thin film filter layer formed between the first electrode and the light-reflecting layer. [C10] The light-emitting device according to any one of [C04] to [C09], wherein the first electrode and the light-reflecting layer are surrounded by a light-shielding portion or a light-reflecting portion. [C11] The light-emitting element according to any one of [C01] to [C10], wherein the first electrode is made of a light-transmitting material, and the second electrode is made of a semi-light-transmitting material. [C12] The first electrode is made of ITO or IZO; The light-emitting device according to [C11], wherein the second electrode is made of at least one material selected from the group consisting of Ag, Ag--Mg, Ag--Nd--Cu, Au, Ag--Cu, Al, and Al--Cu. [D01] The light-emitting element according to any one of [A01] to [C12], wherein the full width at half maximum of light emitted from the light-emitting element is 30 nm or less. [D02] The light intensity on the center line passing through the center of the light-emitting part of the light-emitting element is I0, and the light intensity on the center line passing through the center of the light-emitting part of the light-emitting element that does not have a light-reflecting layer is I conv When I0 / I conv ≧5 The light-emitting element according to any one of [A01] to [D01], which satisfies the following: [D03] A light-emitting element described in any one of [A01] to [D02], wherein when the light intensity on a center line passing through the center of the light-emitting portion of the light-emitting element is 100%, a directivity half-value angle, which is the angle between the center line and the direction relative to the center line at which the light intensity is 50%, is 25 degrees or less. [E01]《Display device》 A first substrate, A second substrate, and A plurality of light emitting elements sandwiched between a first substrate and a second substrate; The panel has a A display device in which each light-emitting element is constituted by the light-emitting element according to any one of [A01] to [D03]. [E02] The display device according to [E01], wherein the display device is a projection type display device. [E03] A red light emitting panel that emits red light; one green light emitting panel that emits green light; and The display device according to [E02], which is composed of three panels, including one blue light emitting panel that emits blue light. [E04] Further comprising a blue light emitting panel for emitting blue light, The display device according to [E03], which is composed of four panels. [E05] The display device according to [E04], in which four panels are arranged in an array. [E06] The display device according to [E04], wherein the four panels are arranged in a 2×2 configuration. [E07] The display device according to any one of [E02] to [E06], further comprising a projection lens system on the light exit side. [E08] An image synthesis means for synthesizing images emitted from a plurality of panels into one image; and The display device according to any one of [E03] to [E06], further comprising a projection lens system on the light exit side of the image synthesis means. [E09] The display device according to [E08], wherein the image synthesis means comprises a non-polarizing dichroic prism. [E10] The display device according to [E08], wherein the image synthesis means comprises a Philips prism. [E11] The display device according to any one of [C08] to [E10], wherein the light incident on the projection lens system is parallel light. [E12] The display device according to any one of [E01] to [E11], wherein the panel is curved. [F01]《Surface emitting device》 A first substrate, A second substrate, and A plurality of light emitting elements sandwiched between a first substrate and a second substrate; The panel has a A surface emitting device in which each light emitting element is constituted by the light emitting element according to any one of [A01] to [D03]. [F02]《Display device (HMD)》 A frame to be worn on the observer's head; and an image display device attached to a frame; Equipped with The image display device includes: An image forming apparatus including the display device according to any one of [E01] to [E12], and an optical device into which light emitted from the image forming apparatus is incident and into which the light is emitted; Equipped with The optical device is a light guide plate through which light incident from an image forming device propagates through the inside thereof by total reflection and is then emitted toward an observer; a first deflection means for deflecting light incident on the light guide plate such that the light incident on the light guide plate is totally reflected inside the light guide plate; and a second deflection means for deflecting the light propagated inside the light guide plate by total reflection a plurality of times so as to emit the light propagated inside the light guide plate by total reflection from the light guide plate; A display device comprising: [F03] 《3D sensing device》 An image forming apparatus including the display device according to any one of [E01] to [E12], and an imaging device that captures an image projected onto an object by the display device; A three-dimensional sensing device having: [F04] Wearable devices A wearable device comprising the display device according to any one of [E01] to [E12]. [Explanation of symbols]

[0180] Reference Signs List: 1R red light emitting panel (first panel), 1G green light emitting panel (second panel), 1B1, 1B2 blue light emitting panels (third panel, fourth panel), 10, 10' light emitting element, 11 first substrate, 20 transistor, 21 gate electrode, 22 gate insulating layer, 23 channel forming region, 24 source / drain region, 25 element isolation region, 26 base (interlayer insulating layer), 26A lower interlayer insulating layer, 26B upper interlayer insulating layer, 27 contact plug, 28 insulating layer, 29 opening, 30 light emitting portion, 30' light emitting region, 31 first electrode, 32 second electrode, 33 organic layer, 33A, 33B light emitting element a light guiding section (light reflecting section), a light absorbing layer (black matrix layer ...

Claims

1. A light emitting section having a plurality of light emitting regions; and One or more microlens members for controlling the direction of light emitted from each light-emitting region; Equipped with Further, a light guide portion that controls a traveling direction of the light emitted from the microlens member is provided. The light guiding unit has a structure in which a plurality of light guiding units are stacked, A light-emitting element in which the axes of the multiple light-guiding portions are not aligned in the same straight line.

2. A light emitting portion having one light emitting region; and A plurality of microlens members for controlling the traveling direction of light emitted from one light-emitting region; Equipped with Further, a light guide portion that controls a traveling direction of the light emitted from the microlens member is provided. The light guiding unit has a structure in which a plurality of light guiding units are stacked, A light-emitting element in which the axes of the multiple light-guiding portions are not aligned in the same straight line.

3. A light emitting section having a plurality of light emitting regions; and One or more microlens members for controlling the direction of light emitted from the plurality of light-emitting regions; Equipped with Further, a light guide portion that controls a traveling direction of the light emitted from the microlens member is provided. The light guiding unit has a structure in which a plurality of light guiding units are stacked, A light-emitting element in which the axes of the multiple light-guiding portions are not aligned in the same straight line.

4. A light emitting section having a plurality of light emitting regions; and One or more microlens members for controlling the direction of light emitted from each light-emitting region; Equipped with The optical axis of the microlens member is not positioned on a center line passing through the center of the light-emitting region, Further, a light guide portion that controls a traveling direction of the light emitted from the microlens member is provided. The light guiding unit has a structure in which a plurality of light guiding units are stacked, A light-emitting element in which the axes of the multiple light-guiding portions are not aligned in the same straight line.

5. 5. The light-emitting device according to claim 1, wherein the planar shape of the microlens member is a rectangle or a square with rounded corners.

6. The light-emitting element according to claim 1 , wherein when the optical axis of the microlens member is positioned on a center line passing through the center of the light-emitting region, the orthogonal projection image of the light-emitting region is included within the orthogonal projection image of the microlens member.

7. The light-emitting element according to claim 1 , further comprising a second microlens member that controls a traveling direction of light emitted from the microlens member.

8. The light-emitting part is a first electrode shared in the light emitting region; an organic layer formed on the first electrode and including a light-emitting layer made of an organic light-emitting material; and a second electrode formed on the organic layer; Equipped with Further, a light reflective layer is provided below the first electrode, light emitted from the light emitting layer is resonated between the interface between the second electrode and the organic layer and the light reflecting layer, causing a portion of the light to be emitted from the second electrode; An insulating layer is formed between the first electrode and the organic layer, 8. The light emitting device according to claim 1, wherein the insulating layer is provided with an opening for defining a light emitting region.

9. The light-emitting part is a first electrode shared in the light emitting region; an organic layer formed on the first electrode and including a light-emitting layer made of an organic light-emitting material; and a second electrode formed on the organic layer; Equipped with The light-emitting layer is formed by laminating a plurality of light-emitting layers that emit light of the same color, An insulating layer is formed between the first electrode and the organic layer, 8. The light emitting device according to claim 1, wherein the insulating layer is provided with an opening for defining a light emitting region.

10. The light-emitting device according to claim 1 , wherein the microlens member has a positive optical power.

11. The light-emitting device according to claim 1 , wherein the light-emitting region has a convex shape in a direction away from the microlens member.

12. The light-emitting device according to claim 1 , wherein the microlens member has a negative optical power.

13. A light emitting section having a plurality of light emitting regions; and a light guide section for controlling the direction of light emitted from each light-emitting region; Equipped with the light emitting region has a convex shape in a direction away from the light guiding portion, The light guiding unit has a structure in which a plurality of light guiding units are stacked, A light-emitting element in which the axes of the multiple light-guiding portions are not aligned in the same straight line.

14. A light emitting section having a plurality of light emitting regions; and a light guide section for controlling the direction of light emitted from each light-emitting region; Equipped with the light emitting region has a convex shape in a direction away from the light guiding portion, the light emitting region has positive optical power; The light guiding unit has a structure in which a plurality of light guiding units are stacked, A light-emitting element in which the axes of the multiple light-guiding portions are not aligned in the same straight line.

15. A first substrate, A second substrate, and A plurality of light emitting elements sandwiched between a first substrate and a second substrate; The panel has a A display device, wherein each light-emitting element is constituted by the light-emitting element according to any one of claims 1 to 14.

16. 16. The display device of claim 15, wherein the display device comprises a projection display device.

17. A first substrate, A second substrate, and A plurality of light emitting elements sandwiched between a first substrate and a second substrate; The panel has a A surface light emitting device, wherein each light emitting element is the light emitting element according to claim 1 .

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