Touch panel display

Abstract

To solve a problem of a touch panel display which has a limit on reduction of the thickness even if an in-cell system is adopted.SOLUTION: A touch panel display includes: a touch sensor having a first sensor electrode and a second sensor electrode; a display unit in which a plurality of pixels are arranged; a drive circuit which drives the touch sensor and the display unit; a first transparent insulating layer covering the touch sensor; a second transparent insulating layer between the touch sensor and the display unit; and a first inorganic insulating layer that holds the touch sensor, the display unit and the drive circuit, and faces the first transparent insulating layer. The first sensor electrode includes a plurality of diamond electrode patterns arranged in a first direction and electrically connected. The second sensor electrode includes a plurality of diamond electrode patterns arranged in a second direction and electrically connected. The first sensor electrode and the second sensor electrode are electrically connected to a drawing wire via a contact hole that penetrates through the second transparent insulating layer, the contact hole being held between the first transparent insulating layer and the first inorganic insulating layer.SELECTED DRAWING: Figure 37

Description

[Technical field]

[0001] An embodiment of the present invention relates to a display device with a touch detection function and a manufacturing method thereof, for example, to a display device using an organic electroluminescence element as a display element and having a built-in touch sensor. [Background technology]

[0002] A display device with a touch detection function of the so-called in-cell type has been disclosed, in which a liquid crystal display element is used as the display element and a common electrode of the liquid crystal display element and a capacitive touch detection electrode are integrated within the liquid crystal display panel (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-073783 A Summary of the Invention [Problem to be solved by the invention]

[0004] Conventional display devices with touch detection functions are manufactured using glass substrates, so there is a limit to how thin they can be made, even if the in-cell method is adopted. In addition, as long as a glass substrate is used, there is a problem that a display having flexibility (a so-called flexible display) cannot be realized. [Means for solving the problem]

[0005] A display device with a touch detection function according to one embodiment of the present invention has a transparent resin substrate, a touch sensor embedded in the transparent resin substrate, a pixel including a transistor and an organic electroluminescence element electrically connected to the transistor, a display section in which the pixels are arranged, and a shield electrode arranged between the touch sensor and the display section, and the pixel is configured to emit light toward the transparent resin substrate.

[0006] A manufacturing method for a display device with a touch detection function according to one embodiment of the present invention includes forming a transparent resin substrate including a touch sensor composed of a first sensor electrode extending in a first direction and a second sensor electrode extending in a second direction intersecting the first direction, forming a shield electrode covering the touch sensor, and forming a display unit on the transparent resin substrate in which pixels are arranged, the pixels including a transistor and an organic electroluminescent element electrically connected to the transistor. Effect of the Invention

[0007] According to an embodiment of the present invention, since the sensor electrodes constituting the touch sensor are embedded in the transparent resin substrate, it is possible to reduce the thickness of the display device with a touch detection function. In addition, it is possible to realize a flexible display device with a touch detection function. [Brief description of the drawings]

[0008] [Figure 1] 1 is a plan view illustrating a configuration of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 2] 1 is a perspective view illustrating a configuration of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 3] 1 is a diagram illustrating an example of an equivalent circuit of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 4] 1 is a plan view showing a pixel structure of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 5] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 6] 1 is a plan view showing a configuration of a touch sensor provided in a display device with a touch detection function according to an embodiment of the present invention. [Figure 7] 1 is a plan view showing a configuration of a touch sensor provided in a display device with a touch detection function according to an embodiment of the present invention. [Figure 8]1 is a plan view showing a configuration of a touch sensor provided in a display device with a touch detection function according to an embodiment of the present invention. [Figure 9] 1 is a diagram showing a schematic cross-sectional structure of a display device with a touch detection function according to an embodiment of the present invention; [Figure 10] 1A to 1C are diagrams illustrating a cross-sectional structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention and explaining a manufacturing method thereof. [Figure 11] 1A to 1C are diagrams illustrating a cross-sectional structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention and explaining a manufacturing method thereof. [Figure 12] 1A to 1C are diagrams for explaining a method for manufacturing a pixel of a display device with a touch detection function according to an embodiment of the present invention, and are diagrams showing a patterning process by a multi-tone exposure method. [Figure 13] 1A to 1C are diagrams illustrating a cross-sectional structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention and explaining a manufacturing method thereof. [Figure 14] 1A to 1C are diagrams illustrating a cross-sectional structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention and explaining a manufacturing method thereof. [Figure 15] 1A to 1C are diagrams illustrating a cross-sectional structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention and explaining a manufacturing method thereof. [Figure 16] 1A to 1C are diagrams illustrating a cross-sectional structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention and explaining a manufacturing method thereof. [Figure 17] 1 is a plan view showing an aspect in which a plurality of display panels are produced on a support substrate in a manufacturing process of a display device with a touch detection function according to an embodiment of the present invention. FIG. [Figure 18] 1 is a diagram illustrating an example of an equivalent circuit of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 19] 1 is a plan view showing a pixel structure of a display device with a touch detection function according to an embodiment of the present invention. [Figure 20] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 21]1 is a diagram illustrating an example of an equivalent circuit of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 22] 1 is a plan view showing a pixel structure of a display device with a touch detection function according to an embodiment of the present invention. [Figure 23] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 24] 1 is a diagram illustrating an example of an equivalent circuit of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 25] 1 is a plan view showing a pixel structure of a display device with a touch detection function according to an embodiment of the present invention. [Figure 26] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 27] 1 is a plan view showing a pixel structure of a display device with a touch detection function according to an embodiment of the present invention. [Figure 28] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 29] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 30] 1 is a plan view showing a pixel structure of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 31] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 32] 1 is a plan view showing a pixel structure of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 33] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 34] 1 is a plan view showing a pixel structure of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 35] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 36] 1 is a plan view showing an electrode structure of a touch sensor embedded in a display device with a touch detection function according to an embodiment of the present invention; [Figure 37] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 38] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Figure 39] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 40] 1 is a cross-sectional view showing a structure of a pixel of a display device with a touch detection function according to an embodiment of the present invention. [Diagram 41] 2 is a plan view showing an example of a sensor electrode of the display device with a touch detection function according to the embodiment of the present invention; FIG. [Diagram 42] 2 is a plan view showing an example of a sensor electrode of the display device with a touch detection function according to the embodiment of the present invention; FIG. [Diagram 43] 2 is a plan view showing an example of a sensor electrode of the display device with a touch detection function according to the embodiment of the present invention; FIG. [Diagram 44] 2 is a plan view showing an example of a sensor electrode of the display device with a touch detection function according to the embodiment of the present invention; FIG. [Diagram 45] 2 is a plan view showing an example of a sensor electrode of the display device with a touch detection function according to the embodiment of the present invention; FIG. [Figure 46] 2 is a plan view showing an example of a sensor electrode of the display device with a touch detection function according to the embodiment of the present invention; FIG. [Figure 47] 1 is a cross-sectional view showing an example of a connection structure between a sensor electrode and a lead-out wiring of a display device with a touch detection function according to an embodiment of the present invention. [Figure 48] 1 is a cross-sectional view showing an example of a connection structure between a sensor electrode and a lead-out wiring of a display device with a touch detection function according to an embodiment of the present invention. [Figure 49] 1 is a cross-sectional view showing an example of a connection structure between a sensor electrode and a lead-out wiring of a display device with a touch detection function according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. However, the present invention includes many different aspects and is not to be construed as being limited to the following exemplary embodiments. The drawings attached to this specification may be schematic in width, thickness, shape, etc. of each part compared to the actual aspect in order to make the explanation clearer, but this is merely an example and does not necessarily limit the contents of the present invention. Furthermore, in this invention, when a specific element shown in one drawing and a specific element shown in another drawing are identical or correspond to each other, the same symbol (or a symbol with a, b, etc. added after the number shown as the symbol) will be used and the elements will be described repeatedly. The explanation of the return may be omitted as appropriate. Furthermore, the letters "first" and "second" attached to each element are convenient labels used to distinguish each element, and have no other meaning unless otherwise specified.

[0010] In this specification, when a certain member or region is described as being "on (or under)" another member or region, unless otherwise specified, this includes not only the case where it is directly above (or directly below) the other member or region, but also the case where it is above (or below) the other member or region. In other words, it also includes the case where another component is included between the certain member or region and above (or below) the other member or region.

[0011] First embodiment: In this embodiment, a display device with a touch detection function will be described, which has a touch sensor function of detecting a touch on a screen and a display function of displaying an image on the screen.

[0012] 1-1. Display device configuration 1 shows a configuration of a display device 100 with a touch detection function according to an embodiment of the present invention. The display device 100 with a touch detection function has a display unit 102, a drive circuit unit 104, a terminal unit 106, and a touch sensor 108 on a first surface of a transparent resin substrate 124. The display unit 102 includes a plurality of pixels 110. The plurality of pixels 110 are arranged in a first direction (for example, the X direction shown in FIG. 1) and a second direction (for example, the Y direction shown in FIG. 1) intersecting the first direction. The arrangement of the plurality of pixels 110 is arbitrary, and various arrangements such as a stripe arrangement, a delta arrangement, a Bayer arrangement, a pentile arrangement, and a diamond pentile arrangement are applicable.

[0013] The touch sensor 108 includes a first sensor electrode 114 and a second sensor electrode 116. The first sensor electrode 114 is formed in a pattern extending in a first direction. The second sensor electrode 116 is formed in a pattern extending in a second direction intersecting the first direction. The first sensor electrode 114 and the second sensor electrode 116 may have any pattern, for example, a flat (strip) pattern. A plurality of the first sensor electrodes 114 and the second sensor electrodes 116 are arranged. A plurality of the first sensor electrodes 114 are arranged in the second direction, and a plurality of the second sensor electrodes 116 are arranged in the first direction. The first sensor electrodes 114 and the second sensor electrodes 116 are arranged so as to intersect with each other via an insulating layer.

[0014] The terminal portion 106 includes a plurality of terminal electrodes 118 arranged along one side of a transparent resin substrate 124. The plurality of terminal electrodes 118 are electrically connected to a flexible printed wiring board 122, and serve as terminals to which signals are input from an external circuit.

[0015] The driving circuit unit 104 includes a first driving circuit 112a, a second driving circuit 112b, and a third driving circuit 112c. The first driving circuit 112a, the second driving circuit 112b, and the third driving circuit 112c may be arranged arbitrarily. For example, the first driving circuit 112a and the third driving circuit 112c may be formed on a transparent resin substrate 124 using thin film transistors (TFTs), and the second driving circuit 112b may be formed of a semiconductor integrated circuit (LSI: Large Scale Integrated circuit) and mounted on the flexible printed wiring board 122 in the form of a bare chip. The semiconductor integrated circuit mounted on the flexible printed wiring board 122 is also called a driver IC. The second driving circuit 112b may be integrated with a video signal processing circuit 113 that outputs video signals to a plurality of pixels 110 and a sensor signal processing circuit 115 that processes signals from the touch sensor 108. This can reduce the mounting cost.

[0016] The display unit 102 and the touch sensor 108 are arranged so as to overlap partially or entirely. The display unit 102 displays an image or video, and the touch sensor 108 detects contact or proximity of a human finger or the like. The touch sensor 108 detects operations on a graphic user interface (GUI) such as icons and keys displayed on the display unit 102.

[0017] The touch sensor 108 has a function of detecting contact or proximity of a human finger or the like by utilizing a change in capacitance. The first sensor electrode 114 serves as a receiver electrode (Rx electrode) and sequentially outputs detection signals (Vdet). The second sensor electrode 116 serves as a transmitter electrode (Tx electrode) and is sequentially supplied with common drive signals (Vcom) from the third drive circuit 112c.

[0018] The display device 100 with a touch detection function exhibits an input / output function by having the display unit 102 display an image and the touch sensor 108 detect a touch on the screen. The display unit 102 is driven by a scanning signal output from a first drive circuit 112a and a video signal output from a second drive circuit 112b. The touch sensor 108 is driven by a detection signal input to a first sensor electrode 114 via a terminal electrode 118 and a common drive signal supplied to a second sensor electrode 116 from a third drive circuit 112c. A graphic user interface (GUI) such as an icon is displayed on the display unit 102, and the touch sensor 108 detects a touch on the screen, making it possible to determine whether or not the GUI has been operated.

[0019] FIG. 2 shows a perspective view for explaining the configuration of the display device 100 with a touch detection function. The display device 100 with a touch detection function has a transparent resin substrate 124 in which a first sensor electrode 114 and a second sensor electrode 116 are embedded. The first sensor electrode 114 and the second sensor electrode 116 form a touch sensor 108. On the transparent resin substrate 124, a display section 102 in which pixels 110 are arranged, a drive circuit section 104, a terminal section 106 in which terminal electrodes 118 are arranged, and the like are provided. The transparent resin substrate 124 also includes a shield electrode 126. The shield electrode 126 is provided between the first sensor electrode 114 and the second sensor electrode 116 and the display section 102. A sealing layer 128 may be provided on the display section 102. The sealing layer 128 is provided to protect the display section 102 and the drive circuit section 104. Each of the first sensor electrode 114 and the second sensor electrode 116 embedded in the transparent resin substrate 124 is electrically connected to a terminal electrode 118 via a contact hole formed in the transparent resin substrate 124 .

[0020] The pixel 110 includes a light-emitting element. For example, an organic electroluminescence element (hereinafter, also referred to as an "organic EL element") is used as the light-emitting element. The display device 100 with a touch detection function has a so-called bottom emission type structure in which light emitted from the pixel 110 is emitted through a transparent resin substrate 124. For this reason, the transparent resin substrate 124 has translucency. Since the first sensor electrode 114, the second sensor electrode 116, and the shield electrode 126 are arranged to overlap with the pixel 110, these electrodes also have translucency. For example, each of the first sensor electrode 114, the second sensor electrode 116, and the shield electrode 126 is formed of a transparent conductive film. As shown in FIG. 2, the display device 100 with a touch detection function has a configuration in which an image displayed on the display unit 102 is viewed from the transparent resin substrate 124 side. That is, the display device 100 with a touch detection function has a configuration in which an image displayed on the display unit 102 is viewed through the touch sensor 108.

[0021] The sealing layer 128 may have any configuration. For example, the sealing layer 128 is formed of an inorganic insulating film such as a silicon oxide film or a silicon nitride film. The sealing layer 128 may also be formed using a resin material such as a polyimide resin, an acrylic resin, or an epoxy resin. The sealing layer 128 is provided to prevent deterioration of the light-emitting element provided in the pixel 110.

[0022] 1-2.Pixel equivalent circuit 3 shows an example of an equivalent circuit of the pixel 110a. The pixel 110a includes an organic EL element 134, a selection transistor 136, a driving transistor 138, and a capacitance element 140. The selection transistor 136 and the drive transistor 138 have a dual gate structure in which a semiconductor layer (also called an "active layer") is sandwiched between two gate electrodes. The drive transistor 138 has a first gate electrode 154 and a second gate electrode 166, and the selection transistor 136 has a first gate electrode 156 and a second gate electrode 168.

[0023] The selection transistor 136 and the drive transistor 138 are insulated gate field effect transistors, with the source and drain serving as signal input / output terminals and the gate serving as a control terminal for controlling the on / off of the transistor. In the equivalent circuit shown in Fig. 3, the selection transistor 136 and the drive transistor 138 are assumed to be n-channel transistors.

[0024] A control terminal (first gate electrode 156 and second gate electrode 168) of the selection transistor 136 is electrically connected to the gate signal line 142a. One of the input / output terminals (first terminal) of the selection transistor 136 is electrically connected to the data signal line 144, and the other of the input / output terminals (second terminal) is electrically connected to the control terminal (first gate electrode 154 and second gate electrode 166) of the drive transistor 138. One of the input / output terminals (first terminal: source) of the drive transistor 138 is electrically connected to the common wiring 146 (146a, 146b, 146c), and the other of the input / output terminals (second terminal: drain) is electrically connected to one terminal (first terminal) of the organic EL element 134. The capacitance element 140 has one terminal (first terminal) electrically connected to the control terminal (first gate electrode 154 and second gate electrode 166) of the drive transistor 138, and the other terminal (second terminal) electrically connected to the common wiring 146 (146a, 146b, 146c). The other terminal (second terminal) of the organic EL element 134 is electrically connected to the power supply line 148.

[0025] A constant potential (for example, ground potential) is applied to the first common wiring 146a, the second common wiring 146b, and the third common wiring 146c. A power supply potential VDD, which is a potential higher than that of the common wiring 146, is applied to the power supply line 148. One terminal (first terminal) of the organic EL element 134 is a cathode, and the other terminal (second terminal) is an anode. When a voltage equal to or higher than a threshold voltage is applied to the control terminal of the driving transistor 138, a current flows through the organic EL element 134 connected between the power supply line 148 and the common wiring 146. The light emission intensity of the organic EL element 134 is controlled by the drain current of the driving transistor 138.

[0026] 1-3.Pixel structure FIG. 4 shows an example of a planar structure of a pixel 110a corresponding to the equivalent circuit shown in FIG. 3. FIG. 5(A) shows a cross-sectional structure of the pixel 110a corresponding to the A1-A2 line shown in FIG. 4. FIG. 5(B) shows a cross-sectional structure of the pixel 110a corresponding to the B1-B2 line shown in FIG. 4. FIG. 5(A) shows a cross-sectional structure of the selection transistor 136 and the capacitance element 140, and FIG. 5(B) shows a cross-sectional structure of the drive transistor 138 and the organic EL element 134. In the following description, FIG. 4, FIG. 5(A) and FIG. 5(B) will be referred to as appropriate. In the plan view of the pixel 110a shown in FIG. 4, the structures of the first sensor electrode 114, the second sensor electrode 116 and the organic EL element 134 are omitted.

[0027] 4, the pixel 110a is provided with a drive transistor 138, a selection transistor 136, and a capacitance element 140. The pixel 110a is also provided with a gate signal line 142, a data signal line 144, and a common wiring 146 that are connected to these elements.

[0028] As shown in FIG. 5(A) and FIG. 5(B), a first sensor electrode 114 and a second sensor electrode 116 are embedded in the transparent resin substrate 124. The first sensor electrode 114 and the second sensor electrode 116 form a touch sensor 108. A driving transistor 138, a selection transistor 136, a capacitance element 140, and an organic EL element 134 are provided on the transparent resin substrate 124. The first sensor electrode 114 and the second sensor electrode 116, and the driving transistor 138, a selection transistor 136, a capacitance element 140, and an organic EL element 134 are provided on the transparent resin substrate 124. A shield electrode 126 is disposed between the gate 138, the selection transistor 136, the capacitance element 140, and the organic EL element .

[0029] The second sensor electrode 116 has an opening 119 in a region overlapping with the first gate electrode 154. The second sensor electrode 116 is applied with a common drive signal (Vcom) as a transmitter electrode (Tx electrode). Between the second sensor electrode 116 and the first gate electrode 154, only the third transparent resin layer 150c is interposed, and both are disposed relatively close to each other. In this case, when the first gate electrode 154 is in a floating state, if a drive signal is applied to the second sensor electrode 116, an electric field generated by the drive signal acts on the first gate electrode 154, causing the operation of the drive transistor 138 to become unstable, which may result in a malfunction. In order to distance the first gate electrode 154 from the second sensor electrode 116, it is preferable to increase the film thickness of the fourth transparent resin layer 150c. For example, the fourth transparent resin layer 150c is provided with a film thickness of 10 μm or more, preferably 15 μm or more. Furthermore, the second sensor electrode 116 is preferably provided with an opening 119. By providing the opening 119 in the second sensor electrode 116, it is possible to prevent the common drive signal (Vcom) from affecting the first gate electrode 154.

[0030] On the other hand, in the region where the selection transistor 136 is disposed, it is preferable that the second sensor electrode 116 covers the first gate electrode 156. A scanning signal is applied to the first gate electrode 156 from the gate signal line 142a. The scanning signal is at least two-level signal voltage, a voltage that turns the selection transistor 136 on and a voltage that turns it off. The second sensor electrode 116 is disposed so as to overlap with the first gate electrode 156, thereby blocking the electric field caused by this signal voltage. With this structure, it is possible to prevent the signal voltage applied to the first gate electrode 156 from acting on the first sensor electrode 114. This stabilizes the operation of the touch sensor and prevents malfunction.

[0031] 1-3-1.Transparent resin substrate The transparent resin substrate 124 has a structure in which a plurality of transparent resin layers are laminated. The first sensor electrode 114 and the second sensor electrode 116 are sandwiched between a plurality of transparent resin layers 150. For example, as shown in FIG. 5(A) and FIG. 5(B), the first sensor electrode 114 is provided between the first transparent resin layer 150a and the second transparent resin layer 150b. The second sensor electrode 116 is provided between the second transparent resin layer 150b and the third transparent resin layer 150c. In this way, by forming the transparent resin substrate 124 with a plurality of transparent resin layers 150, the first sensor electrode 114 and the second sensor electrode 116 can be embedded in the substrate.

[0032] The transparent resin substrate 124 further includes a shield electrode 126 provided on the upper surface of the third transparent resin layer 150c. The shield electrode 126 is provided so as to extend over substantially the entire surface of the pixel 110a. In this embodiment, the shield electrode 126 is provided with a first opening 152a in a region overlapping with the drive transistor 138, and a second opening 152b in a region overlapping with the selection transistor 136. A constant potential is applied to the shield electrode 126. For example, the shield electrode 126 is applied with a ground potential. By providing the first opening 152a and the second opening 152b in the shield electrode 126, it is possible to prevent the potential of the shield electrode 126 from directly acting on the gate of the transistor.

[0033] The shield electrode 126 is transparent. For example, the shield electrode 126 is formed of a transparent conductive film. Examples of the transparent conductive film include indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), and tin oxide. Conductive metal oxides such as SnO2, titanium nitride (TiN x ) A conductive transparent conductive film of a metal nitride such as titanium oxynitride (TiON) or a metal oxynitride, or an organic material having conductivity such as polyaniline or graphene is used. The transparent electrode may be formed from a metal material such as aluminum, titanium, copper, etc., and may have a structure in which openings are provided to allow light to pass through in accordance with the arrangement of pixels.

[0034] A fourth transparent resin layer 150d is provided on the shield electrode 126. The fourth transparent resin layer 150d forms an insulating surface of the transparent resin substrate 124. Since elements such as transistors that constitute the pixels 110a are provided on the upper layer side of the fourth transparent resin layer 150d, it is preferable that the surface of the fourth transparent resin layer 150d is flattened.

[0035] The transparent resin substrate 124 is flexible because it is made of a resin material. As the resin material, a transparent polyimide resin, a transparent polyethylene naphthalate resin, a transparent para-polyamide resin, or the like can be used. Since the transparent polyimide resin and the transparent polyethylene naphthalate resin have inferior gas barrier properties compared to the glass substrate, a gas barrier film formed of a silicon nitride film or the like may be further provided. On the other hand, the transparent para-polyamide resin has transparency, heat resistance, and gas barrier properties, so it can be suitably used as the transparent resin layer 150. Each of the first transparent resin layer 150a, the second transparent resin layer 150b, the third transparent resin layer 150c, and the fourth transparent resin layer 150d may be formed of the same resin material, or at least a part or all of the layers may be formed of different resin materials. Since the transparent resin substrate 124 has a plurality of transparent resin layers stacked, an electrode of a touch sensor can be provided inside.

[0036] The transparent resin substrate 124 preferably has a heat resistance of 150°C to 400°C. For example, when the maximum process temperature (heating temperature) when the pixels 110a are fabricated is 250°C or lower, a para-type polyamide resin can be used as the resin material. By using a para-type polyamide resin, the gas barrier properties of the transparent resin substrate 124 can be improved. On the other hand, when the maximum process temperature (heating temperature) when the pixels 110a are fabricated is 250°C or higher, it is preferable to use a transparent polyimide resin from the viewpoint of heat resistance.

[0037] Nanocellulose fiber (CNF) may be mixed into the transparent polyimide resin or the transparent para-polyamide resin. By mixing the nanocellulose fiber (CNF) into the transparent polyimide resin or the transparent para-polyamide resin, there is an advantage that the rigidity is improved, shrinkage is suppressed, and dimensional stability is improved. In order to enjoy such an advantage, the nanocellulose fiber (CNF) may be mixed into any of the first transparent resin layer 150a, the second transparent resin layer 150b, the third transparent resin layer 150c, and the fourth transparent resin layer 150d. The mixing ratio of the nanocellulose fiber (CNF) is preferably 1% by weight to 10% by weight.

[0038] The first transparent resin layer 150a, the second transparent resin layer 150b, the third transparent resin layer 150c, and the fourth transparent resin layer 150d preferably have a thickness of 3 μm to 10 μm in order to function as a structure that maintains the shape of the transparent resin substrate 124 and as a planarizing film in which the first sensor electrode 114 and the second sensor electrode 116 are embedded.

[0039] In this manner, the display device with a touch detection function 100 according to this embodiment can be made thinner and lighter by embedding the electrodes of the touch sensor 108 in the transparent resin substrate 124.

[0040] FIG. 6 shows in plan view the arrangement of the first sensor electrodes 114 and the second sensor electrodes 116 that constitute the touch sensor 108. The first sensor electrodes 114 are formed of a flat (strip-shaped) conductive pattern extending in the Y direction shown in FIG. 6. The second sensor electrodes 116 are formed of a flat (strip-shaped) conductive pattern extending in the X direction shown in FIG. 6. A plurality of first sensor electrodes 114 are arranged in the X direction, and a plurality of second sensor electrodes 116 are arranged in the Y direction. A plurality of first sensor electrodes 114 and a plurality of second sensor electrodes 116 are arranged in the Y direction. The first sensor electrode 114 and the second sensor electrode 116 are arranged to intersect with each other with the second transparent resin layer 150b in between. The first sensor electrode 114 and the second sensor electrode 116 are formed of a transparent conductive film because they are arranged on the emission surface side of the light emitted from the pixel 110a. The first sensor electrode 114 and the second sensor electrode 116 are provided via the second transparent resin layer 150b. The second transparent resin layer 150b acts as a dielectric film, and a capacitance is formed between the first sensor electrode 114 and the second sensor electrode 116.

[0041] The first sensor electrode 114 is provided with a detection signal (Vdet) and is used as a receiver electrode (Rx electrode), and the second sensor electrode 116 is provided with a common drive signal (Vcom) and is used as a transmitter electrode (Tx electrode). The first sensor electrode 114 and the second sensor electrode 116 form a touch sensor 108 on the transparent resin substrate 124. The capacitance of the touch sensor 108 changes when a human finger or the like touches or approaches the touch sensor 108. The touch sensor 108 is formed on the transparent resin substrate 124 using this characteristic.

[0042] The first sensor electrode 114 and the second sensor electrode 116 are disposed over a part or the whole of the display unit 102. The first sensor electrode 114 and the second sensor electrode 116 are translucent. For example, the first sensor electrode 114 and the second sensor electrode 116 are formed of a transparent conductive film. Examples of the transparent conductive film include conductive metal oxides such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), and tin oxide (SnO2), titanium nitride (TiN x ), a conductive transparent conductive film of a metal nitride such as titanium oxynitride (TiON) or a metal oxynitride, or an organic material having conductivity such as polyaniline or graphene is used. The first sensor electrode 114 and the second sensor electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided to allow light to pass through in accordance with the arrangement of the pixels 110a.

[0043] The number of the first sensor electrodes 114 and the second sensor electrodes 116 is arbitrary. The first sensor electrodes 114 and the second sensor electrodes 116 are arranged in a number far less than the number of the pixels 110a arranged, since it is sufficient to identify the contact area of ​​a human fingertip, for example. For example, when the area (screen size) of the display unit 102 is 5 inches, the length of the diagonal line of the display unit 102 is 125 mm. In this case, for example, 1080×1920 pixels may be arranged, and the first sensor electrodes 114 may be arranged in 12 pieces (5 mm pitch, electrode width 1.0 mm to 1.5 mm) or 25 pieces (2.5 mm pitch, electrode width 0.5 mm to 0.7 mm). In addition, the second sensor electrodes 116 may be arranged in 22 pieces (5 mm pitch, electrode width 4.9 mm) or 45 pieces (2.5 mm pitch, electrode width 2.4 mm).

[0044] 1-3-2.Circuit element structure 5(A) and 5(B), a driving transistor 138, a selection transistor 136, a capacitance element 140, and an organic EL element 134 are provided on a transparent resin substrate 124. In this embodiment, the driving transistor 138 and the selection transistor 136 have a dual gate structure, and the organic EL element 134 has a so-called inverted stack structure in which an organic electroluminescence layer is stacked from the cathode side.

[0045] 1-3-2-1. Drive transistor The driving transistor 138 has a structure in which a first gate electrode 154, a first insulating layer 158, a first oxide semiconductor layer 162a, a second insulating layer 164, and a second gate electrode 166 are stacked. The first gate electrode 154 is disposed so as to overlap the first oxide semiconductor layer 162a with the first insulating layer 158 interposed therebetween, and the second gate electrode 166 is disposed so as to overlap the first oxide semiconductor layer 162a with the second insulating layer 164 interposed therebetween. The first gate electrode 154, the second gate electrode 166, and the first oxide semiconductor layer 162a have mutually overlapping regions. In the driving transistor 138, the first oxide semiconductor layer 162a is disposed so as to overlap the first gate electrode 154 and the second gate electrode 166. A channel is formed in a region overlapping with the first opening 152a. The first gate electrode 154 is disposed inside the first opening 152a and is filled with the fourth transparent resin layer 150d. The second gate electrode 166 is disposed on the upper layer of the second insulating layer 164 (the surface opposite to the transparent resin substrate 124).

[0046] The first transparent conductive layer 160a and the second transparent conductive layer 160b are disposed between the first insulating layer 158 and the first oxide semiconductor layer 162a. The first transparent conductive layer 160a and the second transparent conductive layer 160b are disposed so as to sandwich the first gate electrode 154 and the second gate electrode 166 from both sides in a plan view. The first transparent conductive layer 160a and the second transparent conductive layer 160b may be disposed so that their tip regions overlap the first gate electrode 154 and the second gate electrode 166. The first transparent conductive layer 160a and the second transparent conductive layer 160b are provided so as to contact the first oxide semiconductor layer 162a. In the driving transistor 138, the region where the first transparent conductive layer 160a contacts the first oxide semiconductor layer 162a becomes the drain region, and the region where the second transparent conductive layer 160b contacts the first oxide semiconductor layer 162a becomes the source region.

[0047] The first oxide semiconductor layer 162a is formed using a metal oxide material. As the metal oxide material, a quaternary oxide material, a ternary oxide material, a binary oxide material, or a single element oxide material is applied. These metal oxide materials may be in an amorphous form, a crystalline form, or a mixed phase form of an amorphous phase and a crystalline phase.

[0048] As quaternary oxide materials, In2O3-Ga2O3-SnO2-ZnO oxide materials are used. As ternary oxide materials, In2O3-Ga2O3-SnO2 oxide materials, In2O3-Ga2O3-ZnO oxide materials, In2O3-SnO2-ZnO oxide materials, In2O3-Al2O3-ZnO oxide materials, Ga2O3-SnO2-ZnO oxide materials, Ga2O3-Al2O3-ZnO oxide materials, Sn O2-Al2O3-ZnO-based oxide materials, binary oxide materials such as In2O3-ZnO-based oxide materials, SnO2-ZnO-based oxide materials, Al2O3-ZnO-based oxide materials, MgO-ZnO-based oxide materials, SnO2-MgO-based oxide materials, and In2O3-MgO-based oxide materials, and single oxide materials such as In2O3-based metal oxide materials, SnO2-based metal oxide materials, and ZnO-based metal oxide materials can be used. The oxide semiconductor may also contain silicon (Si), nickel (Ni), tungsten (W), hafnium (Hf), and titanium (Ti). For example, the In-Ga-Zn-O-based oxide material shown above is an oxide material containing at least In, Ga, and Zn, and there is no particular limitation on the composition ratio. In other words, the oxide semiconductor layer 162 is represented by the chemical formula InMO3(ZnO) m A thin film represented by (m>0) can be used. Here, M represents one or more metal elements selected from Ga, Al, Mg, Ti, Ta, W, Hf, and Si. The above-mentioned quaternary oxide material, ternary oxide material, binary oxide material, and single element oxide material are not limited to those containing oxides of stoichiometric composition, and may be composed of oxide materials having compositions deviated from the stoichiometric composition. Such metal oxide semiconductor materials have a band gap of 3.0 eV or more and are transparent to light in the visible light band.

[0049] The first transparent conductive layer 160a and the second transparent conductive layer 160b are made of a conductive metal oxide material, a metal nitride material, or a metal oxynitride material. Examples of metal oxide materials include indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), and titanium oxide doped with niobium (TiNbO x) can be used. Such a metal oxide material can form a good ohmic contact with the oxide semiconductor layer 162. Titanium nitride (TiN x Metal nitrides and metal oxynitrides having transparency and electrical conductivity, such as titanium oxynitride (TiON) and titanium oxide nitride (TiON), can also be used.

[0050] As shown in FIG. 5A, the driving transistor 138 is electrically connected to the second common wiring 146b. The first oxide semiconductor layer 162a and the second transparent conductive layer 160b are extended to an area where the third common wiring 146c is arranged and are electrically connected. The first oxide semiconductor layer 162a contacts the third common wiring 146c from the upper layer side, and the second transparent conductive layer 160b contacts the third common wiring 146c from the lower layer side. The second common wiring 146b is provided in contact with the shield electrode 126 and is given the same potential as the shield electrode 126. The third common wiring 146c is electrically connected to the second common wiring 146b through a contact hole 153a provided in the first insulating layer 158 and the fourth transparent resin layer 150d. 4, in a planar layout, the third common wiring 146c is electrically connected to the second common wiring 146b extending in the second direction (Y direction shown in FIG. 4). The first common wiring 146a, the second common wiring 146b, and the third common wiring 146c are formed of a metal material such as titanium, aluminum, molybdenum, copper, or the like.

[0051] The first insulating layer 158 has a structure in which, for example, a first silicon nitride film 174a and a first silicon oxide film 176a are stacked from the side of the first gate electrode 154. The second insulating layer 164 has a structure in which, for example, a second silicon oxide film 176b and a second silicon nitride film 174b are stacked from the side of the first oxide semiconductor layer 162a. The first oxide semiconductor layer 162a is provided in contact with the first silicon oxide film 176a and the second silicon oxide film 176b. It is expected that the first oxide semiconductor layer 162a is provided in contact with the silicon oxide film to suppress the generation of oxygen vacancies. It is preferable that the first silicon oxide film 176a and the second silicon oxide film 176b provided in contact with the channel region of the first oxide semiconductor layer 162a are free of oxygen vacancies and preferably contain excess oxygen. The first silicon oxide film 176a and the second silicon oxide film 176b containing excess oxygen can be a supply source of oxygen for the first oxide semiconductor layer 162a. The silicon oxide film containing excess oxygen includes a film containing a large amount of oxygen relative to the stoichiometric composition. The silicon oxide film containing excess oxygen may contain excess oxygen in the lattice. Note that the first insulating layer 158 and the second insulating layer 164 may be formed of a silicon oxynitride film or an aluminum oxide film instead of a silicon oxide film.

[0052] The first gate electrode 154 and the second gate electrode 166 are made of a metal material such as aluminum (Al), molybdenum (Mo), tungsten (W), zirconium (Zr), copper (Cu), or the like. As the aluminum alloy, an aluminum-neodymium alloy (Al-Nd), an aluminum-neodymium-nickel alloy (Al-Nd-Ni), an aluminum-carbon-nickel alloy (Al-C-Ni), a copper-nickel alloy (Cu-Ni), or the like can be applied. For example, the first gate electrode 154 and the second gate electrode 166 are made of a film of an aluminum (Al), a molybdenum-tungsten (MoW) alloy, or the like. The first gate electrode 154 may be made of a first gate electrode layer 154a formed of the same transparent conductive film as the shield electrode 126, and a first gate electrode layer 154b formed of the above-mentioned metal film.

[0053] The driving transistor 138 is covered with a planarization layer 172. The planarization layer 172 is formed of an organic resin material, such as an acrylic resin, a polyimide resin, an epoxy resin, or a polyamide resin. When a composition containing a precursor of the organic resin material is applied during the manufacturing process, the surface of the planarization layer 172 is planarized by the leveling effect of the coating film. The planarization layer 172 may also be formed of an inorganic insulating film, such as a silicon oxide film or a silicon nitride film.

[0054] The driving transistor 138 according to this embodiment has a dual gate structure in which the first oxide semiconductor layer 162a is sandwiched between two gate electrodes (a first gate electrode 154 and a second gate electrode 166). It is preferable that the first gate electrode 154 and the second gate electrode 166 are electrically connected to each other and have the same potential. This allows the driving transistor 138 to be current-driven. The performance is improved, and a sufficient current can be supplied to drive the organic EL element 134. For example, even if the operating point of the organic EL element 134 fluctuates, the driving transistor 138 can perform constant current driving in response to the fluctuation of the operating point.

[0055] 1-3-2-2.Selection transistor The selection transistor 136 has a structure in which a first gate electrode 156, a first insulating layer 158, a second oxide semiconductor layer 162b, a second insulating layer 164, and a second gate electrode 168 are stacked. In the selection transistor 136, a channel is formed in a region where the second oxide semiconductor layer 162b overlaps with the first gate electrode 156 and the second gate electrode 168. The first gate electrode 156 is disposed inside the second opening 152b of the shield electrode 126. The first gate electrode 156 may have a structure in which a first gate electrode layer 156a formed of the same transparent conductive film as the shield electrode 126 and a first gate electrode layer 156b formed of a metal film are stacked inside the second opening 152b. A third transparent conductive layer 160c and a fourth transparent conductive layer 160d are provided between the first insulating layer 158 and the second oxide semiconductor layer 162b. The third transparent conductive layer 160c and the fourth transparent conductive layer 160d are provided in contact with the second oxide semiconductor layer 162b, and function as a source region and a drain region. The third transparent conductive layer 160c and the fourth transparent conductive layer 160d are provided to sandwich the first gate electrode 156 and the second gate electrode 168 from both sides in a plan view.

[0056] The third transparent conductive layer 160c is electrically connected to the data signal line 144. The data signal line 144 is in direct contact with the upper surface of the third transparent conductive layer 160c. The second oxide semiconductor layer 162b is extended to the area where the data signal line 144 is disposed, and is provided so as to cover the data signal line 144. The data signal line 144 is in direct contact with the third transparent conductive layer 160c, so that the contact area is increased and the contact resistance is reduced compared to the case where the data signal line 144 is connected via a contact hole. In addition, the data signal line 144 is not exposed to an oxidizing atmosphere or a reducing atmosphere in the manufacturing process, because the upper surface and side surfaces are covered with the second oxide semiconductor layer 162b. Therefore, it is possible to suppress the data signal line 144 from becoming highly resistive on the surface.

[0057] The fourth transparent conductive layer 160d is electrically connected to the drain electrode 169. The second oxide semiconductor layer 162b is disposed on the upper surface of the fourth transparent conductive layer 160d so as to cover the drain electrode 169. The drain electrode 169 is electrically connected to the second gate electrode 166 of the drive transistor 138. The selection transistor 136 has a dual gate structure in which the first oxide semiconductor layer 162b is sandwiched between the first gate electrode 156 and the second gate electrode 168. This improves the switching characteristics of the selection transistor 136 and enables a reduction in the off-current.

[0058] 1-3-2-3.Capacitive element As shown in FIG. 5B, the capacitance element 140 has a structure in which a first capacitance electrode 170a, a first insulating layer 158, and a second capacitance electrode 170b are laminated. The first capacitance electrode 170a is formed in a region in which the fourth transparent conductive layer 160d and the second oxide semiconductor layer 162b are extended to the outside of the drain electrode 169. The first capacitance electrode 170a has a structure in which the fourth transparent conductive layer 160d and the second oxide semiconductor layer 162b are laminated. The first capacitance electrode 170a is electrically connected to the drain of the selection transistor 136. The second capacitance electrode 170b is formed in the same layer as the second gate electrode 168, and is electrically connected to the first common wiring 146a through a contact hole 153b provided in the first insulating layer 158 and the fourth transparent resin layer 150d.

[0059] 1-3-2-4. Organic EL elements As shown in FIG. 5A, the organic EL element 134 has a structure in which, from the transparent resin substrate 124 side, a first electrode 180 corresponding to a cathode, an electron transport layer 182, an electron injection layer 184, a light emitting layer 186, a hole transport layer 188, a hole injection layer 190, and a second electrode 192 corresponding to an anode are laminated. do.

[0060] In the region where the organic EL element 134 is to be formed, an opening 178 is provided in the planarizing layer 172 and the second insulating layer 164. A first electrode 180, which is a cathode of the organic EL element 134, is disposed so as to overlap the opening 178. The opening 178 also exposes the upper surface of an electron transport layer 182 disposed on the first electrode 180. An electron injection layer 184, a light-emitting layer 186, a hole transport layer 188, a hole injection layer 190, and a second electrode 192 serving as an anode are laminated on the electron transport layer 182 in accordance with the arrangement of the opening 178. The region where these laminates and the first electrode 180 overlap is the light-emitting region of the organic EL element 134. Each layer constituting the organic EL element 134 will be described in detail below.

[0061] 1-3-2-4-1.Cathode The first electrode 180, which corresponds to a cathode, is formed of a transparent conductive film. Specifically, the first transparent conductive layer 160a is extended to the region of the organic EL element 134 to form the first electrode 180. The first transparent conductive layer 160a and the first electrode 180 are formed of a continuous transparent conductive film, thereby forming an electrical connection between the driving transistor 138 and the organic EL element 134. The organic EL element 134 and the driving transistor 138 are directly connected without a contact hole. This structure simplifies the structure of the pixel 110a.

[0062] The first electrode 180, which functions as a cathode, is formed of the same conductive film as the first transparent conductive layer 160a. The first transparent conductive layer 160a is formed of a conductive metal oxide material, metal nitride material, or metal oxynitride material. Conductive films made of these materials have a band gap of 2.8 eV or more, preferably 3.0 eV or more, and therefore transmit almost all light in the visible light range. Therefore, they can be used as an electrode on the light-emitting surface side of the organic EL element 134.

[0063] A first oxide semiconductor layer 162a extending from the driving transistor 138 may be provided on the upper layer of the first electrode 180. The first oxide semiconductor layer 162a has a band gap of 3.0 eV or more, and is therefore transparent to visible light. As described later, the electron transport layer 182 is formed of a metal oxide. Therefore, by interposing the first oxide semiconductor layer 162a, which is the same or similar material as the electron transport layer 182, between the first electrode 180 corresponding to the cathode, it is possible to prevent the formation of an electron injection barrier. In other words, the first oxide semiconductor layer 162a extending from the channel region of the driving transistor 138 can be used as a part of the electron transport layer 182 in contact with the first electrode 180.

[0064] 1-3-2-4-2.Electron transport layer The electron transport layer 182 is formed using a metal oxide material. As the metal oxide material, a quaternary oxide material, a ternary oxide material, a binary oxide material, or a single-element oxide material can be used, as in the oxide semiconductor layer 162. These metal oxide materials may be in an amorphous form, a crystalline form, or a mixed phase form of an amorphous phase and a crystalline phase.

[0065] For example, the electron transport layer 182 is formed containing one or more selected from indium oxide, zinc oxide, gallium (Ga) oxide, tin (Sn) oxide, magnesium (Mg) oxide, silicon (Si) oxide, hafnium (Hf) oxide, tantalum (Ta) oxide, and niobium (Nb) oxide. These metal oxide materials have a band gap of 3.0 eV or more and are transparent to visible light. The electron transport layer 182 is preferably formed to a film thickness of 50 nm to 1000 nm. By making the film thickness of the electron transport layer 182 as large as possible, the effect of preventing a short circuit between the first electrode 180 and the second electrode 192 is increased. The electron transport layer 182 is formed by a sputtering method, a vacuum deposition method, a coating method, or the like.

[0066] The carrier concentration of the electron transport layer 182 is preferably 1 / 10 or less, and more preferably 1 / 100 or less, of the carrier concentration of the first oxide semiconductor layer 162a. In other words, the carrier concentration in the region where the first oxide semiconductor layer 162a contacts the electron transport layer 182 is preferably 10 times or more, and more preferably 100 times or more, of the carrier concentration of the electron transport layer 182. Specifically, when the carrier concentration of the electron transport layer 182 is 10 13 / cm 3 ~10 17 / cm 3 On the other hand, the carrier concentration of the first oxide semiconductor layer 162a is 10 15 / cm 3 ~10 19 / cm 3 The difference between the carrier concentrations of the first oxide semiconductor layer 162a and the second oxide semiconductor layer 162b is preferably at least one digit, more preferably at least two digits, as described above. 15 / cm 3 ~10 19 / cm 3 In the electron transport layer 182, the carrier concentration is in the range of 10 20 / cm 3 If the carrier concentration in the electron transport layer 182 is 10 13 / cm 3 If it is less than this, the carriers supplied to the light-emitting layer 186 are reduced, making it impossible to obtain sufficient brightness. In this way, by providing the first oxide semiconductor layer 162a extending from the driving transistor 138 in contact with the electron transport layer 182 and making the carrier concentrations of the two layers different, it is possible to prevent an increase in the driving voltage and to increase the light-emitting efficiency of the organic EL element 134.

[0067] The carrier concentration of the electron transport layer 182 can be controlled by controlling the concentration of oxygen vacancies in the oxide semiconductor film. The oxygen vacancies in the oxide semiconductor film act as donors. Increasing the density of oxygen vacancies in the oxide semiconductor film increases the carrier concentration, and decreasing the density of oxygen vacancies decreases the carrier concentration. For example, oxygen vacancies in the oxide semiconductor can be increased by the action of hydrogen and decreased by supplying oxygen.

[0068] 1-3-2-4-3.Electron injection layer In an organic EL element, the electron injection layer is used to reduce the energy barrier for injecting electrons from the cathode to the electron transport layer. The electron injection layer 184 is preferably provided to facilitate the injection of electrons from the electron transport layer 182 made of an oxide semiconductor to the light-emitting layer 186. For this reason, in the organic EL element 134, the electron injection layer 184 is provided between the electron transport layer 182 and the light-emitting layer 186.

[0069] The electron injection layer 184 is desirably made of a material having a small work function in order to inject electrons into the light emitting layer 186. The electron injection layer 184 is composed of calcium (Ca) oxide and aluminum (Al) oxide. For example, C12A7 (12CaO 7Al2O3) electride is preferably used as the electron injection layer 184. C12A7 electride has semiconductor properties, can be controlled from high resistance to low resistance, and has a work function of 2.4 eV to 3.2 eV, which is similar to that of alkali metals, so that it can be suitably used as the electron injection layer 184.

[0070] The electron injection layer 184 formed of C12A7 electride is produced by a sputtering method using a polycrystalline body of C12A7 electride as a target. Since C12A7 electride has semiconductor properties, the film thickness of the electron injection layer 184 is preferably 1 nm to 100 nm. If the film thickness of the electron injection layer 184 is smaller than this range, an interface with a small energy barrier cannot be formed with the light emitting layer 186, and if the film thickness is larger than this range, the resistance value increases and the driving voltage increases. Note that the molar ratio of Ca:Al in the C12A7 electride is preferably in the range of 13:13 to 11:16. In addition, since the C12A7 electride is formed by the sputtering method, it is preferable that it is amorphous, and it may be crystalline.

[0071] C12A7 electride is stable in the air, and therefore has the advantage of being easier to handle than alkali metal compounds such as lithium fluoride (LiF), lithium oxide (Li2O), sodium chloride (NaCl), and potassium chloride (KCl), which have been used conventionally as electron injection layers. This eliminates the need to work in dry air or inert gas in the manufacturing process of organic EL devices, and relaxes the restrictions on manufacturing conditions.

[0072] In addition, since C12A7 electride has a large ionization potential, it can be used as a hole blocking layer by being disposed on the opposite side of the hole transport layer 188 across the light emitting layer 186. That is, by providing the electron injection layer 184 formed of C12A7 electride between the electron transport layer 182 and the light emitting layer 186, it is possible to suppress the holes injected into the light emitting layer 186 from penetrating to the side of the first electrode 180, which is the cathode, and to increase the light emitting efficiency.

[0073] 1-3-2-4-4.Emitting layer Various materials can be used as the light-emitting layer 186. For example, a fluorescent compound that emits fluorescence and a phosphorescent compound that emits phosphorescence are used as materials for forming the light-emitting layer 186. For example, the light-emitting layer corresponding to red and the light-emitting layer corresponding to green may be formed of a phosphorescent compound, and the light-emitting layer corresponding to blue may be formed of a fluorescent compound. To make the light-emitting layer 186 a white light-emitting layer, the light-emitting layer 186 may have a structure in which a blue light-emitting layer and a yellow light-emitting layer are laminated. The light-emitting layer 186 can be manufactured by a deposition method, a transfer method, a spin-coating method, a spray-coating method, a gravure printing method, or the like. The film thickness of the light-emitting layer 186 may be appropriately selected, and is provided in the range of, for example, 10 nm to 100 nm.

[0074] 1-3-2-4-5.Hole transport layer The hole transport layer 188 is formed using a material having hole transport properties. The hole transport layer 188 may be, for example, an arylamine compound, an amine compound containing a carbazole group, or an amine compound containing a fluorene derivative. The hole transport layer 188 is formed by a vacuum deposition method, a coating method, or the like. The hole transport layer 188 is formed to a film thickness of 10 nm to 500 nm by such a film formation method. The hole transport layer 188 may be omitted.

[0075] 1-3-2-4-6.Hole injection layer The hole injection layer 190 includes a material having a high hole injection property with respect to the organic layer. As the material having a high hole injection property, metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used. In addition, materials such as phthalocyanine (H2Pc), copper (II) phthalocyanine (abbreviation: CuPc), and hexaazatriphenylene hexacarbonitrile (HAT-(CN)6) can also be used. Such a hole injection layer 190 is fabricated by a film forming method such as a vacuum deposition method or a coating method. The hole injection layer 190 is fabricated by such a film forming method to have a film thickness of 1 nm to 100 nm.

[0076] 1-3-2-4-7.Anode The second electrode 192, which corresponds to the anode, is made of a metal, alloy, or conductive compound having a large work function (specifically, 4.0 eV or more). For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide containing tungsten oxide and zinc oxide (IWZO), or the like is used for the second electrode 192. The second electrode 192, which corresponds to the anode and uses these conductive metal oxide materials, is made by a vacuum deposition method or a sputtering method. Since the organic EL element 134 is a bottom emission type, it is preferable that the second electrode 192, which corresponds to the anode, is light reflective or has a light reflective surface. Since a coating of a conductive metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO) has light transmissivity, a metal film such as aluminum (Al), silver (Ag), or the like may be laminated on the surface opposite to the hole injection layer 190. Note that the metal film is omitted in FIG. 4, FIG. 5(A), and FIG. 5(B). However, a passivation layer that blocks the permeation of oxygen (O2) and moisture (H2O) may be provided on the upper layer of the second electrode 192.

[0077] In this manner, the pixel 110a according to this embodiment has a structure in which the driving transistor 138 exhibiting n-channel type conductivity is electrically connected to the organic EL element 134. The organic EL element 134 is a bottom emission type, and emits light to the side of the shield electrode 126. Since the electron transport layer and electron injection layer disposed on the lower layer side of the organic EL element 134 are formed of an inorganic insulating material, deterioration of characteristics is suppressed, and the characteristics of the organic EL element 134 can be stabilized.

[0078] 1-4. Touch sensor configuration As described with reference to Fig. 6, the first sensor electrodes 114 and the second sensor electrodes 116 are arranged to cross each other so as to form a matrix. Fig. 7 shows a configuration of a touch sensor 108 and a drive circuit 112 arranged to overlap the display unit 102.

[0079] 7 shows a touch sensor 108 in which a first sensor electrode 114 and a second sensor electrode 116 are arranged, and a first drive circuit 112a, a second drive circuit 112b, and a third drive circuit 112c arranged in an area outside the touch sensor 108. The first drive circuit 112a has a function of sequentially selecting the scanning signal lines arranged in the display unit 102 and outputting a scanning signal. The third drive circuit 112c is a scan circuit for the touch sensor, and has a function of sequentially selecting the second sensor electrodes 116 and sequentially outputting a common drive signal (Vcom). The first drive circuit 112a and the third drive circuit 112c are configured to include a sequential logic circuit such as a shift register.

[0080] On the other hand, the second driving circuit 112b includes circuit blocks having different functions. The circuit blocks include a touch sensor sensing circuit block 117a, a touch sensor scan circuit block 117b, a scan signal line driving circuit block 117c, and a video signal line driving circuit block 117d. The second driving circuit 112b including these circuit blocks 117 is preferably realized in one semiconductor chip (integrated circuit). FIG. 7 shows an embodiment in which the second driving circuit 112b including these multiple circuit blocks is realized in one bare chip and mounted on a flexible printed wiring board 122 by COF (Chip on Film). In this way, by integrating multiple functions into one semiconductor chip, the cost of mounting can be reduced.

[0081] In the second driving circuit 112b, the touch sensor sensing circuit block 117a is connected to the first sensor electrode 114. The touch sensor sensing circuit block 117a has a function of sequentially outputting a detection signal (Vdet) to the first sensor electrode 114. The touch sensor scan circuit block 117b has a function of outputting a timing signal and a common drive signal (Vcom) to the third driving circuit 112c. The scan signal line driving circuit block 117c has a function of outputting a timing signal synchronized with a video signal to the first driving circuit 112a. The video signal line driving circuit block 117d is connected to a video signal line arranged in the display unit 102 and has a function of outputting a video signal to the video signal line.

[0082] 8 shows an embodiment in which a first driving circuit 112a and a third driving circuit 112c are arranged on both sides of the display unit 102. According to this circuit arrangement, the same scanning signal is applied to the scanning signal lines (not shown) arranged in the display unit 102 from both sides, and the same common driving signal (Vcom) is applied to the second sensor electrodes 116 from both sides. With this circuit arrangement, even if the scanning signal lines and the second sensor electrodes 116 have large load capacitance, it is possible to drive the scanning signal lines and the second sensor electrodes 116 at high speed. The second driving circuit 112b includes a touch sensor sensing circuit block 117a, a touch sensor scan circuit block 117b, a scanning signal line driving circuit block 117c, a touch sensor sensing circuit block 117d, a touch sensor scanning circuit block 117e, a scanning signal line driving circuit block 117f, a touch sensor sensing circuit block 117g, a touch sensor scanning circuit block 117h, a touch sensor scanning circuit block 117i, a touch sensor scanning circuit block 117j, a touch sensor scanning circuit block 117k ... The circuit block 117c and the video signal line driving circuit block 117d are integrated into one semiconductor chip (integrated circuit), which can reduce the process of mounting the semiconductor chip (integrated circuit) on the flexible printed wiring board 122, compared to the case where each circuit block is mounted on an individual semiconductor chip (integrated circuit).

[0083] On the other hand, if the semiconductor chip (integrated circuit) for controlling the touch sensor and the semiconductor chip (integrated circuit) for driving the display unit 102 are realized as separate semiconductor chips, it is necessary to mount the two semiconductor chips separately. In that case, the same mounting process is repeated twice, which is a factor in reducing productivity. In contrast, according to the present embodiment, it is possible to complete the mounting process only once. This makes it possible to improve the manufacturing yield and reduce the manufacturing cost.

[0084] Although FIG. 7 shows an example in which the second driving circuit 112b is realized by one semiconductor chip, the present invention is not limited to this embodiment, and the functions of each circuit block may be realized by individual semiconductor chips.

[0085] 9 shows a schematic cross-sectional structure of the display device with a touch detection function 100. The display device with a touch detection function 100 shows a transparent resin substrate 124 including a first sensor electrode 114, a second sensor electrode 116, and a shield electrode 126, and a terminal portion 106, a circuit element layer 149, an organic EL element 134, and a sealing layer 128 provided on the transparent resin substrate 124. The circuit element layer 149 is a layer including circuit elements such as a drive transistor 138, a selection transistor 136, and a capacitance element 140.

[0086] In the terminal section 106, the terminal electrodes 118a, 118b are formed in the same layer as the circuit element layer 149. That is, the terminal electrodes 118a, 118b are provided on the fourth transparent resin layer 150d. In this case, the first sensor electrode 114 is connected to the terminal electrode 118b by a contact hole penetrating the fourth transparent resin layer 150d, the third transparent resin layer 150c, and the second transparent resin layer 150b, and the second sensor electrode 116 is connected to the terminal electrode 118a by a contact hole penetrating the fourth transparent resin layer 150d and the third transparent resin layer 150c. The terminal electrodes 118a, 118b are electrically connected to the flexible printed wiring board 122 on which the second drive circuit 112b is mounted. In this way, the terminal electrodes and the sensor electrodes provided in the same layer are connected by contact holes of different depths, thereby making it possible to increase the density of the terminal section 106.

[0087] 1-5. Method for manufacturing display device An example of a manufacturing method of a display device with a touch detection function according to an embodiment of the present invention will be described with reference to the drawings. In the following, the manufacturing method according to the present embodiment will be described with reference to a structure corresponding to the pixel 110a shown in FIG.

[0088] 10 shows a stage for producing a transparent resin substrate 124. In producing the display device with a touch detection function according to this embodiment, a support substrate 200 is used. As the support substrate 200, a plate-shaped glass substrate having a first surface and a second surface opposite to the first surface can be used. As the glass substrate, it is desirable to use a substrate having high heat resistance, and for example, it is preferable to use an alkali-free glass substrate having a strain point of 500° C. or higher, preferably 550° C. or higher.

[0089] A first transparent resin layer 150a is formed on the first surface of the support substrate 200. The first transparent resin layer 150a is made of an insulating resin material. Examples of the resin material include transparent polyimide resin, transparent polyethylene naphthalate resin, and transparent para-polyamide resin. When using a transparent polyimide resin, for example, a diamine and an acid anhydride are polymerized in the presence of a solvent to form a polyimide precursor resin, which is then applied to the first surface of the support substrate 200, The first transparent resin layer 150a is produced by imidizing the resin through heat treatment. When using a transparent para-polyamide resin, the resin is copolymerized to improve its solubility in organic solvents, and is applied to the first surface of the support substrate 200, and the first transparent resin layer 150a is produced by hardening the resin by evaporating the solvent through heat treatment. The first transparent resin layer 150a is formed to a thickness of 3 μm to 30 μm.

[0090] The first sensor electrode 114 is formed on the first transparent resin layer 150a. The first sensor electrode 114 is made of a transparent conductive film. Examples of the transparent conductive film include indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), and titanium oxide doped with niobium (TiNbO x ), titanium nitride (TiN x ), a conductive transparent conductive film of a metal nitride or a metal oxynitride such as titanium oxynitride (TiON), a metal nanowire such as a silver (Ag) nanowire, or an organic material having conductivity such as polyaniline, graphene, or carbon nanotube is used. The first sensor electrode 114 is fabricated by forming a transparent conductive film on the entire first surface of the first transparent resin layer 150a, forming a resist mask by a lithography process, and performing etching. The transparent conductive film formed on the first transparent resin layer 150a is formed in a flat (strip) pattern as shown in FIG. 6, for example. The first sensor electrode 114 may be fabricated from a metal film as shown in other embodiments, and formed in a mesh pattern in which through holes are formed in accordance with the arrangement of the pixels 110a. The first sensor electrode 114 is formed to a thickness of 50 nm to 1000 nm.

[0091] A second transparent resin layer 150b is formed on the first sensor electrode 114. The second transparent resin layer 150b is manufactured in the same manner as the first transparent resin layer 150a. The second transparent resin layer 150b is preferably formed so as to fill the steps due to the pattern of the first sensor electrode 114 and to have a flat surface. A second sensor electrode 116 is formed on the second transparent resin layer 150b. The second sensor electrode 116 is manufactured in the same manner as the first sensor electrode 114. The second sensor electrode 116 is formed to have a flat (strip) pattern, for example, as shown in FIG. 6. In addition, an opening 119 is formed in the second sensor electrode 116 in accordance with the arrangement of the first gate electrode 154 of the driving transistor 138. A third transparent resin layer 150c is formed on the second sensor electrode 116. The third transparent resin layer 150c is manufactured in the same manner as the first transparent resin layer 150a. The third transparent resin layer 150c is preferably formed so as to fill in any steps caused by the pattern of the second sensor electrode 116 and to provide a flat surface.

[0092] FIG. 11 shows a step of forming a shield electrode 126 and a fourth transparent resin layer 150d on the third transparent resin layer 150c. The shield electrode 126 is formed on substantially the entire surface of the third transparent resin layer 150c. The shield electrode 126 is made of a transparent conductive film. Examples of the transparent conductive film include indium tin oxide (ITO), zinc oxide (ZnO), tin oxide (SnO2), and titanium oxide doped with niobium (TiNbO x A coating of a conductive metal oxide such as silver (Ag) nanowires, carbon nanotubes, or graphene is formed by a sputtering method. The thickness of the shield electrode 126 may be about 50 nm to 500 nm. When the shield electrode 126 is made of silver (Ag) nanowires, carbon nanotubes, or graphene, it can be formed by a solution coating method using a silver (Ag) nanowire dispersion, a carbon nanotube dispersion, or a graphene dispersion.

[0093] In the shield electrode 126, a first opening 152a is formed in accordance with the arrangement of a first gate electrode 154 of the drive transistor 138, and a second opening 152b is formed in accordance with the arrangement of a first gate electrode 156 of the selection transistor 136. A common wiring 146 is formed on the shield electrode 126. The common wiring 146 is formed of a metal film such as titanium (Ti), aluminum (Al), molybdenum (Mo), copper (Cu), or the like.

[0094] A first gate electrode 154 is formed inside the first opening 152a. The second opening 152b is formed by laminating a first gate electrode layer 154a formed of the same transparent conductive film as the shield electrode 126 and a first gate electrode layer 154b formed of the same metal film as the common wiring 146. A first gate electrode 156 is formed inside the second opening 152b. The structure of the first gate electrode 156 is the same as that of the first gate electrode 154. By forming the first gate electrodes 154 and 156 from the same conductive layer as the shield electrode 126 and the common wiring 146, the structure and process can be simplified. The opening 152 in the shield electrode 126, the common wiring 146, and the first gate electrodes 154 and 156 are formed by using a multi-tone exposure method. Details of this process will be described with reference to FIGS. 12(A) to 12(E).

[0095] 12(A) to (E) show the cross-sectional structure of the region where the driving transistor 138 is arranged (corresponding to the cross-sectional view of FIG. 11(A)), and show the lithography process for forming the shield electrode 126, the first common wiring 146a, the second common wiring 146b, and the first gate electrode 154. Note that the structure below the third transparent resin layer 150c is omitted in FIGS. 12(A) to (E).

[0096] Fig. 12(A) shows a stage where a transparent conductive film 130 and a metal film 132 are formed on a third transparent resin layer 150c, and a photoresist film 304 formed on the metal film 132 is exposed. In this process, a multi-tone exposure method (half-tone exposure method) is applied, and a first opening 152a, a first common wiring 146a, a second common wiring 146b, and a first gate electrode 154 (including a first gate electrode layer 154a and a first gate electrode layer 154b) are formed in the shield electrode 126 by using one photomask, as shown in Fig. 12(E). Below, Fig. 12(A) to Fig. 12(E) will be described in the order of the process.

[0097] In FIG. 12(A), the photoresist film 304 is a positive type, and the non-exposed region remains and the exposed region is removed by development. A multi-tone mask 300 is used for exposing the photoresist film 304. The multi-tone mask 300 is provided with a multi-tone mask pattern 302. As the multi-tone mask, generally, a gray-tone mask is provided with a slit equal to or smaller than the resolution of the exposure machine, and the slit portion blocks a part of the light to realize intermediate exposure, and a half-tone mask is used to realize intermediate exposure by using a semi-transparent film. In this embodiment, a half-tone mask is used. The multi-tone mask pattern 302 includes an exposed region, an intermediate exposed region, and an unexposed region. In the example shown in FIG. 12(A), the region corresponding to the first opening 152a is the exposed region except for the region where the first gate electrode 154 is formed, the region corresponding to the shield electrode 126 is the intermediate exposed region, and the regions corresponding to the first common wiring 146a, the second common wiring 146b, and the first gate electrode layer 154b are the unexposed regions.

[0098] Fig. 12(B) shows a stage where the photoresist film 304 is exposed through the multi-tone mask 300 and developed. By developing the photoresist film 304, a resist mask pattern 306a including regions with different thicknesses according to the amount of exposed light is formed. Fig. 12(B) shows a form in which the resist mask pattern 306a formed of a positive resist is thick in the portions corresponding to the regions where the first common wiring 146a, the second common wiring 146b, and the first gate electrode layer 154b are to be formed, and thin in the portion corresponding to the region where the shield electrode 126 is to be formed.

[0099] FIG. 12(C) shows the stage where the metal film 132 and the transparent conductive film 130 have been etched to form the shield electrode 126, the first opening 152a, and the first gate electrode layer 154a. When the metal film 132 is a metal such as titanium (Ti) or molybdenum (Mo), it can be processed by dry etching using a fluorine-based etching gas such as CF4, and when the transparent conductive film 130 is a metal oxide such as ITO, it can be processed by dry etching using a chlorine-based etching gas such as BCl3. The transparent conductive film 130 has the property of being difficult to etch with a fluorine-based etching gas such as CF4. Therefore, the transparent conductive film 1 The metal film 132 can be selectively etched on the transparent conductive film 130. In this manner, by laminating the metal film 132 that can be selectively etched and the transparent conductive film 130, a complex shape can be produced by using a single multi-tone mask 300.

[0100] Thereafter, as shown in Fig. 12(D), the resist mask pattern 306a is treated with oxygen plasma or the like to remove the resist in the portion corresponding to the intermediate exposure region, and a resist mask pattern 306b is formed. Then, the metal film 132 is selectively etched using the resist mask pattern 306b, thereby forming the first common wiring 146a and the second common wiring 146b on the shield electrode 126, and the first gate electrode layer 154b on the first gate electrode layer 154a, as shown in Fig. 12(E). Thereafter, the resist mask pattern 306b is removed by ashing or the like.

[0101] In this manner, the shield electrode 126 having the first opening 152a, the first common wiring 146a, the second common wiring 146b, and the first gate electrode 154 (first gate electrode layer 154a, first gate electrode layer 154b) are formed using one photomask and one exposure. Note that, although not shown in Figures 12(A) to (E), the same is true for the second opening 152b and the first gate electrode 156 (first gate electrode layer 156a, first gate electrode layer 156b).

[0102] A fourth transparent resin layer 150d is formed on the shield electrode 126. The fourth transparent resin layer 150d is manufactured in the same manner as the first transparent resin layer 150a. The fourth transparent resin layer 150d flattens the upper surface of the transparent resin substrate 124.

[0103] FIG. 13 shows a step of forming the first insulating layer 158, the transparent conductive layer 160, and the common wiring 146. The first insulating layer 158 is formed by stacking a first silicon nitride film 174a and a first silicon oxide film 176a from the fourth transparent resin layer 150d side. The first silicon nitride film 174a is formed by plasma CVD using gases such as SiH4, NH3, and N2 as source gases. Similarly, the first silicon oxide film 176a is formed by plasma CVD using SiH4, N2O, Si(OC2H5)4 (tetraethoxysilane), Si(OCH3)4 (tetramethoxysilane), and the like as appropriate. Such a first insulating layer 158 is formed so as to cover substantially the entire surface of the fourth transparent resin layer 150d.

[0104] After forming the first insulating layer 158, a contact hole 153a is formed to expose the second common wiring 146b. This contact hole 153a penetrates the first insulating layer 158 and the fourth transparent resin layer 150d.

[0105] On the first insulating layer 158, a transparent conductive layer 160 (first transparent conductive layer 160a, second transparent conductive layer 160b, third transparent conductive layer 160c, fourth transparent conductive layer 160d), a first capacitance electrode 170a, a data signal line 144, a drain electrode 169, and a third common wiring 146c are formed. The transparent conductive layer 160 and the first capacitance electrode 170a are made of a metal oxide material. Examples of the metal oxide material include indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), and titanium oxide doped with niobium (TiNbO x ) is used. The data signal line 144, the drain electrode 169, and the third common wiring 146c are made of a metal material. Examples of the metal material that can be used include titanium (Ti), aluminum (Al), molybdenum (Mo), and copper (Cu). For example, these wirings and electrodes have a structure in which the upper and lower layers of aluminum (Al) or a core metal mainly composed of aluminum (Al) are covered with a high-melting point metal such as titanium (Ti), molybdenum (Mo), or copper (Cu).

[0106] The transparent conductive layer 160 (the first transparent conductive layer 160a, the second transparent conductive layer 160b, the third transparent conductive layer 160c, and the fourth transparent conductive layer 160d), the first capacitance electrode 170a, and the third common wiring 1 12, the second common wiring 146b and the third common wiring 146c are electrically connected to each other through the fourth transparent resin layer 150d in the region where the contact hole 153a is formed. In addition, the data signal line 144 is formed on the third transparent conductive layer 160c, and the drain electrode 169 is formed on the fourth transparent conductive layer 160d.

[0107] FIG. 14 shows a step of forming an oxide semiconductor layer 162 (a first oxide semiconductor layer 162a and a second oxide semiconductor layer 162b). The first oxide semiconductor layer 162a is formed so as to cover substantially the entire surfaces of the first transparent conductive layer 160a and the second transparent conductive layer 160b. The second oxide semiconductor layer 162b is formed so as to cover substantially the entire surfaces of the third transparent conductive layer 160c and the fourth transparent conductive layer 160d. The first oxide semiconductor layer 162a and the second oxide semiconductor layer 162b are formed into an island-shaped pattern as shown in FIG. 4 through a lithography process after an oxide semiconductor film is produced by a sputtering method using an oxide semiconductor as a target. The first oxide semiconductor layer 162a is formed in contact with the first transparent conductive layer 160a and the second transparent conductive layer 160b, and the second oxide semiconductor layer 162b is formed in contact with the third transparent conductive layer 160c and the fourth transparent conductive layer 160d, so that they are electrically connected to each other.

[0108] FIG. 15 shows a step of forming an electron transport layer 182 on the oxide semiconductor layer 162, a second insulating layer 164, second gate electrodes 166 and 168, and a second capacitor electrode 170b.

[0109] As shown in FIG. 15(A), an electron transport layer 182 is formed on the first oxide semiconductor layer 162a. The electron transport layer 182 is in contact with the upper surface of the first oxide semiconductor layer 162a and is provided in an isolated manner according to each pixel. The electron transport layer 182 is formed in a region overlapping with the first electrode 180 continuing from the first transparent conductive layer 160a. The electron transport layer 182 is made of an oxide semiconductor, similar to the first oxide semiconductor layer 162a. By forming the oxide semiconductor material forming the electron transport layer 182 and the oxide semiconductor material forming the first oxide semiconductor layer 162a with different materials, it becomes possible to selectively process the electron transport layer 182 on the first oxide semiconductor layer 162a. That is, by forming the electron transport layer 182 with an oxide semiconductor material having a higher etching rate than the first oxide semiconductor layer 162a, the electron transport layer 182 can be selectively processed. In this processing, by using a multi-tone photomask, it is possible to simultaneously form the first oxide semiconductor layer 162a and the electron transport layer 182 in one exposure step.

[0110] For example, the electron transport layer 182 is a zinc (Zn)-based oxide semiconductor layer (ZnSiO x , ZnMgO x , ZnGaO x The oxide semiconductor layer 162 is formed using a tin (Sn)-based oxide semiconductor layer (InGaSnO x , InWSnO x , InSiSnO x It is preferable to form the oxide semiconductor layer 162 using an oxide semiconductor layer 162 such as zinc oxide, silicon oxide, magnesium oxide, and gallium oxide. In other words, it is preferable that the electron transport layer 182 contains zinc oxide and at least one selected from silicon oxide, magnesium oxide, and gallium oxide, and the oxide semiconductor layer 162 contains tin oxide, indium oxide, and at least one selected from gallium oxide, tungsten oxide, and silicon oxide. This makes it possible to make the etching rates of both oxide semiconductor layers different from each other and to increase the selectivity. That is, the etching rate of the electron transport layer 182 can be made faster than that of the oxide semiconductor layer 162. In addition, the band gap between the oxide semiconductor layer 162 and the electron transport layer 182 can be optimized. That is, the band gap of the electron transport layer 182 can be made larger than that of the oxide semiconductor layer 162. For example, if the band gap of the oxide semiconductor layer 162 is 3.0 eV or more, the band gap of the electron transport layer 182 is equal to or larger than that of the oxide semiconductor layer 162, and is preferably 3.4 eV or more. If the band gap of the electron transport layer 182 is 3.4 eV or more, blue light is emitted. Since the oxide semiconductor layer 162 does not absorb light, the reliability can be improved. The thickness of the oxide semiconductor layer 162 is preferably 10 nm to 100 nm, and the thickness of the electron transport layer 182 is preferably 50 nm to 500 nm. By setting the thicknesses of the oxide semiconductor layer 162 and the electron transport layer 182 in such ranges, it is possible to suppress the generation of plasmons in the first electrode 180 formed of a transparent conductive oxide, and it is possible to improve the luminous efficiency of the organic EL element 134.

[0111] The second insulating layer 164 is formed so as to cover the oxide semiconductor layer 162 and the electron transport layer 182. In the second insulating layer 164, for example, a second silicon oxide film 176b and a second silicon nitride film 174b are laminated from the oxide semiconductor layer 162 side. As a result, a first silicon oxide film 176a is formed on the lower layer side of the oxide semiconductor layer 162, and a second silicon oxide film 176b is formed on the upper layer side. The oxide semiconductor layer 162 is sandwiched between the oxide-based insulating films, which suppresses the generation of defects (donor levels) due to oxygen deficiency.

[0112] 15(B), a contact hole 153b is formed which penetrates the second insulating layer 164, the first insulating layer 158, and the fourth transparent resin layer 150d and exposes the first common wiring 146a. In addition, a contact hole 153c is formed which penetrates the second insulating layer 164 and the first oxide semiconductor layer 162a and exposes the drain electrode 169.

[0113] Thereafter, the second gate electrodes 166 and 168 and the second capacitance electrode 170b are formed. The second gate electrodes 166 and 168 and the second capacitance electrode 170b are formed by etching a metal film formed on the upper surface of the second insulating layer 164 through a lithography process. The second gate electrode 166 is formed so as to include a region overlapping with the first gate electrode 154, and the second gate electrode 168 is formed so as to include a region overlapping with the first gate electrode 156. In this way, the drive transistor 138 and the selection transistor 136 are formed. The second gate electrode 166 is electrically connected to the drain electrode 169 through the contact hole 153c. The second capacitance electrode 170b is electrically connected to the first common wiring 146a through the contact hole 153b. The capacitance element 140 is provided in the region where the first capacitance electrode 170a and the second capacitance electrode 170b overlap through the second insulating layer 164.

[0114] FIG. 16 shows a step of forming a planarization layer 172 and forming an opening 178 that exposes the electron transport layer 182. The planarization layer 172 is formed so as to bury the selection transistor 136, the driving transistor 138, and the capacitance element 140. The planarization layer 172 is formed of an organic resin material such as an acrylic resin, a polyimide resin, an epoxy resin, or a polyamide resin. The planarization layer 172 is formed with an opening 178 that exposes the electron transport layer 182. When the planarization layer 172 is formed of a photosensitive resin material, the opening 178 is formed by performing an exposure process using a photomask. In addition, an opening may be formed in the second insulating layer 164 in advance in a region corresponding to the opening 178 before the planarization layer 172 is formed. It is preferable that the opening 178 is formed so that the inner wall surface has a tapered shape in order to form the organic EL element 134.

[0115] Thereafter, the electron injection layer 184, the light emitting layer 186, the hole transport layer 188, the hole injection layer 190, and the second electrode 192 are formed. Then, the transparent resin substrate 124 is peeled off from the support substrate 200. The transparent resin substrate 124 is peeled off by irradiating it with laser light from the support substrate 200 side. That is, the peeling is performed by causing ablation at the interface between the transparent resin substrate 124 and the support substrate 200 and weakening the adhesive force of the first transparent resin layer 150a.

[0116] Through the above steps, a display device with a touch detection function having the pixel 110a shown in FIGS. 5(A) and 5(B) is manufactured. The electron injection layer 184 can be manufactured by a sputtering method using a sputtering target of C12A7 electride. The sputtering is The electron injection layer 184 is used in common among a plurality of pixels, and is therefore formed over substantially the entire surface of the region in which the pixels 110a are arranged. The light emitting layer 186 is formed using different light emitting materials corresponding to the red, green, and blue pixels. When the light emitted from the light emitting layer 186 has a white emission spectrum, it is formed as a layer common to all the pixels over substantially the entire surface of the region in which the pixels 110a are arranged. The hole transport layer 188 and the hole injection layer 190 are formed as layers common to all the pixels over substantially the entire surface of the region in which the pixels 110a are arranged. The second electrode 192 is used as a common electrode between the pixels, and is therefore formed over substantially the entire surface of the region in which the pixels 110a are arranged.

[0117] 17, the support substrate 200 may be a mother glass substrate (substrate for multiple panels), and a plurality of display panels 101 may be fabricated on the support substrate 200 in the manufacturing process. In this case, the transparent resin layer 150 is formed on substantially the entire surface of the support substrate 200 except for the peripheral areas of the ends, and a plurality of display panels 101 are formed within the area of ​​the transparent resin layer 150. Then, in order to separate the plurality of display panels 101 fabricated on the support substrate 200, the transparent resin substrate 124 formed of the transparent resin layer 150 is cut at the cutting area 202. The transparent resin substrate 124 can be cut by laser processing.

[0118] In this case, it is preferable that shield electrode 126 formed of a transparent conductive film is not formed in division region 202. It is also preferable that first insulating layer 158 and second insulating layer 164 formed of an inorganic insulating film such as a silicon oxide film or a silicon nitride film are not formed in division region 202. Since a transparent conductive film formed of an inorganic material is not formed in division region 202, it is possible to prevent damage to shield electrode 126 during division processing. Similarly, since an inorganic insulating film is not formed in division region 202, it is possible to prevent damage to first insulating layer 158 and second insulating layer 164.

[0119] According to the manufacturing method of the display device with a touch detection function according to the present embodiment, the number of photomasks required for manufacturing can be reduced by using a multi-tone mask. By using a multi-tone mask, a plurality of patterns (the shield electrode 126 and the first gate electrodes 154 and 156, the second transparent conductive layer 160b and the third common wiring 146c, the third transparent conductive layer 160c and the data signal line 144, the fourth transparent conductive layer 160d and the drain electrode 169, the oxide semiconductor layer 162a and the electron transport layer 182) can be manufactured by one exposure. This can increase the productivity of the display device with a touch detection function and reduce the manufacturing cost. In other words, even when electrodes (the first sensor electrode 114 and the second sensor electrode 116) constituting an embedded touch sensor in the display device are formed, the number of photomasks required for manufacturing can be reduced.

[0120] In this embodiment, an example in which both the selection transistor 136 and the driving transistor 138 have a dual-gate structure has been shown, but the present invention is not limited to this. For example, the selection transistor 136 may be a top-gate transistor in which the first gate electrode 156 is omitted. In addition, the pixel circuit is not limited to the circuit shown in FIG. 3, and the transistor and organic EL element according to this embodiment can be applied to a pixel circuit having three or more transistors in one pixel.

[0121] Second embodiment: This embodiment illustrates a pixel structure different from that of the first embodiment in a display device with a touch detection function having a touch sensor function for detecting a touch on a screen and a display function for displaying an image on the screen. In the following description, the differences from the first embodiment will be described.

[0122] 18 shows an equivalent circuit of a pixel 110b according to this embodiment. The difference from the first embodiment is that the first gate electrode 156 of the selection transistor 136 and the first gate electrode of the driving transistor 138 are 3. The other circuit configuration is the same as the equivalent circuit shown in FIG.

[0123] Fig. 19 shows an example of a planar structure of a pixel 110b of a display device with a touch detection function according to this embodiment. Fig. 20(A) shows a cross-sectional structure of the pixel 110b corresponding to the A3-A4 line shown in Fig. 19. Fig. 20(B) shows a cross-sectional structure of the pixel 110b corresponding to the B3-B4 line shown in Fig. 19. The following description will be given with appropriate reference to these drawings.

[0124] The pixel 110b has a shield electrode 126 provided on the entire surface. The shield electrode 126 is provided so as to overlap with the drive transistor 138 and the selection transistor 136. In other words, the pixel 110b according to this embodiment differs from the pixel 110a of the display device with a touch detection function according to the first embodiment in that the shield electrode 126 has no opening.

[0125] The driving transistor 138 is provided with a light-blocking electrode 155 in a region overlapping with the second gate electrode 166. The light-blocking electrode 155 is disposed between the shield electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shield electrode 126. The light-blocking electrode 155 is formed of a metal film, similar to the first gate electrode layer 154b in the first embodiment. While the shield electrode 126 is formed of a transparent conductive film, the light-blocking electrode 155 is formed of a metal film, thereby preventing light incident from the transparent resin substrate 124 side from entering the channel region of the driving transistor 138. This suppresses fluctuations in the threshold voltage of the driving transistor 138.

[0126] The light-blocking electrode 155 is applied with the same potential as the shield electrode 126. Since the shield electrode 126 is applied with, for example, a ground potential, the light-blocking electrode 155 also has the same potential. In the driving transistor 138, a constant voltage is applied via the first insulating layer 158 to a surface (also called a back channel) of the first oxide semiconductor layer 162a on which a channel is formed, opposite to the second gate electrode 166. Since the potential of the back channel of the driving transistor 138 is stabilized, fluctuations in the threshold voltage are suppressed. In this embodiment, the light-blocking electrode 155 may be omitted.

[0127] The selection transistor 136 is also provided with a light blocking electrode 157, similar to the drive transistor 138. Therefore, the selection transistor 136 is light-shielded by the light blocking electrode 157, and the potential of the back channel is stabilized. This suppresses fluctuations in the threshold voltage of the selection transistor 136.

[0128] The light blocking electrodes 155, 157 on the shield electrode 126 can be patterned using a multi-tone exposure method, as in the first embodiment. That is, the light blocking electrodes 155, 157 can be provided without increasing the number of photomasks, as in the first embodiment.

[0129] In this embodiment, the pixel 110b has the same configuration as the pixel 110a in the first embodiment, except for the configuration of the light blocking electrodes 155 and 157. Therefore, the display device with a touch detection function according to this embodiment has the same effects as the first embodiment.

[0130] Third embodiment: This embodiment illustrates a pixel structure different from that of the first embodiment in a display device with a touch detection function having a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, the differences from the first embodiment will be described.

[0131] 21 shows an equivalent circuit of a pixel 110c according to this embodiment. The difference from the first embodiment is that the first gate electrode 154 of the driving transistor 138 is electrically connected to the first common wiring 146a. The other circuit configurations are the same as those of the equivalent circuit shown in FIG.

[0132] Fig. 22 shows an example of a planar structure of a pixel 110c of a display device with a touch detection function according to this embodiment. Fig. 23(A) shows a cross-sectional structure of the pixel 110c corresponding to the A5-A6 line shown in Fig. 22. Fig. 23(B) shows a cross-sectional structure of the pixel 110c corresponding to the B5-B6 line shown in Fig. 22. The following description will be given with appropriate reference to these drawings.

[0133] In the pixel 110c, the shield electrode 126 is provided so as to cover the driving transistor 138. On the other hand, in the region where the selection transistor 136 is provided, a second opening 152b is provided. In the driving transistor 138, a light blocking electrode 155 is provided in a region overlapping with the second gate electrode 166. The light blocking electrode 155 is disposed between the shield electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shield electrode 126. With this structure, light incident from the transparent resin substrate 124 side is prevented from entering the channel region of the driving transistor 138. This suppresses fluctuations in the threshold voltage of the driving transistor 138.

[0134] The selection transistor 136 has a dual gate structure in which the first oxide semiconductor layer 162b is sandwiched between the first gate electrode 156 and the second gate electrode 168. This improves the switching characteristics of the selection transistor 136 and enables a reduction in the off-current.

[0135] In the present embodiment, the pixel 110c has the same configuration as the pixel 110a in the first embodiment, except for the configurations of the shield electrode 126 and the light blocking electrode 155. Therefore, the display device with a touch detection function according to the present embodiment has the same effects as those of the first embodiment.

[0136] Fourth embodiment: This embodiment illustrates a pixel structure different from that of the first embodiment in a display device with a touch detection function having a touch sensor function for detecting a touch on a screen and a display function for displaying an image on the screen. In the following description, the differences from the first embodiment will be described.

[0137] 24 shows an equivalent circuit of a pixel 110d according to this embodiment. The difference from the first embodiment is that the first gate electrode 156 of the selection transistor 136 is electrically connected to the first common wiring 146a. The other circuit configurations are the same as those of the equivalent circuit shown in FIG.

[0138] Fig. 25 shows an example of a planar structure of a pixel 110d of a display device with a touch detection function according to this embodiment. Fig. 26(A) shows a cross-sectional structure of the pixel 110d corresponding to the A7-A8 line shown in Fig. 25. Fig. 26(B) shows a cross-sectional structure of the pixel 110d corresponding to the B7-B8 line shown in Fig. 25. The following description will be given with appropriate reference to these drawings.

[0139] In pixel 110d, the shield electrode 126 is provided so as to cover the selection transistor 136. Meanwhile, a first opening 152a is provided in the region where the drive transistor 138 is provided. The selection transistor 136 is provided with a light blocking electrode 157 in a region overlapping with the second gate electrode 168. The light blocking electrode 157 is disposed between the shield electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shield electrode 126. This structure prevents light incident from the transparent resin substrate 124 side from entering the channel region of the selection transistor 136. This reduces the threshold voltage of the selection transistor 136. Voltage fluctuations are suppressed.

[0140] On the other hand, the driving transistor 138 has a dual gate structure in which the first oxide semiconductor layer 162a is sandwiched between the first gate electrode 154 and the second gate electrode 166. Since the first gate electrode 154 and the second gate electrode 166 are electrically connected and have the same potential, the current driving capability is improved and a sufficient current for driving the organic EL element 134 can be supplied.

[0141] In this embodiment, the pixel 110d has the same configuration as the pixel 110a in the first embodiment, except for the configurations of the shield electrode 126 and the light blocking electrode 157. Therefore, the display device with a touch detection function according to this embodiment has the same effects as those of the first embodiment.

[0142] Fifth embodiment: This embodiment illustrates an example in which the structures of the drive transistor and the selection transistor are different from those of the display device with a touch detection function according to the first embodiment. Specifically, an example in which the drive transistor and the selection transistor are made using a polycrystalline silicon film is illustrated. In the following description, the same parts as those in the first embodiment will be omitted, and the description will focus on the different parts.

[0143] Fig. 27 shows an example of a planar structure of a pixel 110e in a display device with a touch detection function according to this embodiment. Fig. 28(A) shows a cross-sectional structure of the pixel 110e corresponding to the A9-A10 line shown in Fig. 27. Fig. 28(B) shows a cross-sectional structure of the pixel 110e corresponding to the B9-B10 line shown in Fig. 27. In the following description, these drawings will be referred to as appropriate.

[0144] 28(A) and 28(B), the organic EL element 134, the driving transistor 138, the selection transistor 136, and the capacitance element 140 are disposed on a transparent resin substrate 124. The configuration of the transparent resin substrate 124 is similar to that of the first embodiment.

[0145] As shown in FIG. 27 and FIG. 28(A), the driving transistor 138 includes a first semiconductor layer 163a. ​​The material of the first semiconductor layer 163a is a tetrahedral semiconductor, for example, polycrystalline silicon. The first gate electrode 154 is disposed on the lower layer side of the first semiconductor layer 163a via the first insulating layer 158 and the fourth transparent resin layer 150d, and the second gate electrode 166 is disposed on the upper layer side via the second insulating layer 164. The configurations of the first gate electrode 154 and the second gate electrode 166 are the same as those in the first embodiment. The first semiconductor layer 163a includes impurity regions 165a and 165b to which an impurity element for valence electron control is added. In the driving transistor 138, the impurity region 165a is connected to the second common wiring 146b, and the impurity region 165b is connected to the drain electrode 169b. The drain electrode 169b is electrically connected to the first electrode 180 of the organic EL element 134. The first electrode 180 is formed of a transparent conductive film. A third insulating layer 171 is provided between the second gate electrode 166 and the planarization layer 172. The second common wiring 146b and the drain electrode 169b are provided between the third insulating layer 171 and the planarization layer 172.

[0146] As shown in FIG. 27 and FIG. 28(B), the selection transistor 136 includes a second semiconductor layer 163b. The second semiconductor layer 163b is also a tetrahedral-based semiconductor, and polycrystalline silicon, for example, is used. A first gate electrode 156 is disposed on the lower layer side of the second semiconductor layer 163b via a first insulating layer 158 and a fourth transparent resin layer 150d, and a second gate electrode 168 is disposed on the upper layer side via a second insulating layer 164. An impurity region 165c of the second semiconductor layer 163b is connected to the data signal line 144, and an impurity region 165d is connected to a drain electrode 169c.

[0147] The polycrystalline silicon film forming the semiconductor layer 163 is produced by crystallizing an amorphous silicon film produced on the first insulating layer 158 by plasma CVD. The amorphous silicon film is crystallized by irradiating it with laser light (so-called laser annealing). The laser light source may be an excimer laser or the third harmonic of a YAG laser. The laser light is ultraviolet light, which is almost entirely absorbed by the amorphous silicon film, so the transparent resin substrate 124 is not thermally damaged.

[0148] The capacitance element 140 is formed of a first capacitance electrode 170a formed in the same layer as the second gate electrode 168, a second capacitance electrode 170b formed in the same layer as the drain electrode 169c, and a third insulating layer 171 between the first capacitance electrode 170a and the second capacitance electrode 170b. The drain electrode 169c of the selection transistor and the second capacitance electrode 170b are electrically connected. Figures 27 and 28(B) show an embodiment in which the drain electrode 169c and the second capacitance electrode 170b are formed in one continuous conductive layer.

[0149] As shown in FIG. 29(A), the impurity region 165d is further extended to the lower layer region of the first capacitance electrode 170a, so that the area of ​​the capacitance element 140 can be enlarged and the capacitance can be increased without reducing the aperture ratio of the pixel. FIG. 29(B) shows an equivalent circuit of the capacitance element 140. As shown in FIG. 29(B), the capacitance element 140 has a structure in which a capacitance formed between the drain electrode 169c and the first capacitance electrode 170a, a capacitance formed between the impurity region 165d at the same potential as the drain electrode 169c and the first capacitance electrode 170a, and a capacitance formed between the impurity region 165d and the shield electrode 126 at the same potential as the first capacitance electrode 170a are connected in parallel. With such a laminated structure, the capacitance element 140 is increased in capacitance even if the projection area is the same in a plan view.

[0150] 28(A), the organic EL element 134 has the same structure as that of the first embodiment. In this embodiment, the conductivity type of the drive transistor 138 and the selection transistor 136 is an n-channel type. In other words, since the impurity region 165 is an n-type semiconductor, the conductivity type of the drive transistor 138 and the selection transistor 136 is an n-channel type. Therefore, the display device with a touch detection function according to this embodiment can be operated in the same manner as that of the first embodiment.

[0151] The first gate electrode 154 and the second gate electrode 166 of the driving transistor 138 are electrically connected, and the same gate voltage is applied to them. In this way, the driving transistor 138 has a dual gate structure, which improves the current driving capability. Therefore, it is possible to supply a sufficient current to drive the organic EL element 134. Even if the operating point of the organic EL element fluctuates, it is possible to perform constant current driving in response to the fluctuation of the operating point. The first gate electrode 156 and the second gate electrode 168 of the selection transistor 136 are electrically connected. The selection transistor 136 also has a dual gate structure, which suppresses changes in threshold voltage and increases the on-off ratio.

[0152] As shown in this embodiment, a display device with a touch detection function in which a touch sensor is embedded in a transparent resin substrate 124 can also be realized by a transistor using polycrystalline silicon. A transistor in which a channel is formed in polycrystalline silicon can obtain high field effect mobility. This improves the current driving capability of the drive transistor 138, which is advantageous for achieving high pixel definition. The display device with a touch detection function according to this embodiment has the same configuration as the first embodiment, except that the transistor is made of polycrystalline silicon. This makes it possible to obtain the same effects as the display device with a touch detection function according to the first embodiment.

[0153] Sixth embodiment: This embodiment illustrates a pixel structure different from that of the fifth embodiment in a display device with a touch detection function, which has a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, the differences from the fifth embodiment will be described.

[0154] Fig. 30 shows an example of a planar structure of a pixel 110f in a display device with a touch detection function according to this embodiment. Fig. 31(A) shows a cross-sectional structure of the pixel 110f corresponding to the A11-A12 line shown in Fig. 30. Fig. 31(B) shows a cross-sectional structure of the pixel 110f corresponding to the B11-B12 line shown in Fig. 30. The following description will be given with appropriate reference to these drawings.

[0155] The pixel 110f has the same configuration as that of the fifth embodiment, except that the first opening 152a and the second opening 152b are omitted and the shield electrode 126 is provided on the entire surface.

[0156] The driving transistor 138 is provided with a light-blocking electrode 155 in a region overlapping with the second gate electrode 166. The light-blocking electrode 155 is disposed between the shield electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shield electrode 126. The light-blocking electrode 155 is formed of a metal film as in the second embodiment. By providing the light-blocking electrode 155, light incident from the transparent resin substrate 124 side is prevented from entering the channel region of the driving transistor 138. This suppresses fluctuations in the threshold voltage of the driving transistor 138.

[0157] The light blocking electrode 155 is applied with the same potential as the shield electrode 126. Since the shield electrode 126 is applied with, for example, a ground potential, the light blocking electrode 155 also has the same potential. A constant voltage is applied to the back channel side of the first semiconductor layer 163a, in which the channel is formed, of the driving transistor 138 via the first insulating layer 158. This suppresses fluctuations in the threshold voltage of the driving transistor 138.

[0158] The selection transistor 136 is also provided with a light blocking electrode 157, similar to the drive transistor 138. Therefore, the selection transistor 136 is light-shielded by the light blocking electrode 157, and the potential of the back channel is stabilized. This suppresses fluctuations in the threshold voltage of the selection transistor 136.

[0159] In this embodiment, the pixel 110f has the same configuration as the pixel 110c in the fifth embodiment, except for the configuration of the light blocking electrodes 155 and 157. Therefore, the display device with a touch detection function according to this embodiment has the same effects as the fifth embodiment.

[0160] Seventh embodiment: This embodiment illustrates a pixel structure different from that of the fifth embodiment in a display device with a touch detection function having a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, the differences from the fifth embodiment will be described.

[0161] Fig. 32 shows an example of a planar structure of a pixel 110g of a display device with a touch detection function according to this embodiment. Fig. 33(A) shows a cross-sectional structure of the pixel 110g corresponding to the A13-A14 line shown in Fig. 32. Fig. 33(B) shows a cross-sectional structure of the pixel 110g corresponding to the B13-B14 line shown in Fig. 32. The following description will be given with appropriate reference to these drawings.

[0162] In the pixel 110g, the shield electrode 126 is provided so as to cover the driving transistor 138. On the other hand, in the region where the selection transistor 136 is provided, a second opening 152b is provided. The driving transistor 138 is provided with a light-blocking electrode 155 in a region overlapping with the second gate electrode 166. The light-blocking electrode 155 is disposed between the shield electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shield electrode 126. With this structure, light incident from the transparent resin substrate 124 side is prevented from entering the channel region of the driving transistor 138.

[0163] The selection transistor 136 has a dual gate structure in which the second semiconductor layer 163b is sandwiched between the first gate electrode 156 and the second gate electrode 168. This improves the switching characteristics of the selection transistor 136 and enables the off-current to be reduced. In addition, the first gate electrode 156 of the selection transistor 136 has a structure in which the first gate electrode layer 156a formed of a transparent conductive film and the first gate electrode layer 156b formed of a metal film are stacked, so that the first gate electrode 156 also functions as a light-shielding film.

[0164] In the present embodiment, the pixel 110g has the same configuration as the pixel 110e in the fifth embodiment, except for the configurations of the shield electrode 126 and the light blocking electrode 155. Therefore, the display device with a touch detection function according to the present embodiment has the same effects as those of the fifth embodiment.

[0165] Eighth embodiment: This embodiment illustrates a pixel structure different from that of the fifth embodiment in a display device with a touch detection function having a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, the differences from the fifth embodiment will be described.

[0166] Fig. 34 shows an example of a planar structure of a pixel 110h of a display device with a touch detection function according to this embodiment. Fig. 35(A) shows a cross-sectional structure of the pixel 110h corresponding to the line A15-A16 shown in Fig. 34. Fig. 35(B) shows a cross-sectional structure of the pixel 110h corresponding to the line B15-B16 shown in Fig. 34. The following description will be given with appropriate reference to these drawings.

[0167] In the pixel 110h, the shield electrode 126 is provided so as to cover the selection transistor 136. On the other hand, a first opening 152a is provided in the region where the drive transistor 138 is provided. The selection transistor 136 is provided with a light blocking electrode 157 in a region overlapping with the second gate electrode 168. The light blocking electrode 157 is disposed between the shield electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shield electrode 126. This structure prevents light incident from the transparent resin substrate 124 side from entering the channel region of the selection transistor 136. This suppresses fluctuations in the threshold voltage of the selection transistor 136.

[0168] On the other hand, the driving transistor 138 has a dual gate structure in which the first semiconductor layer 163a is sandwiched between the first gate electrode 154 and the second gate electrode 166. Since the first gate electrode 154 and the second gate electrode 166 are electrically connected and have the same potential, the current driving capability is improved and a sufficient current for driving the organic EL element 134 can be supplied.

[0169] In the present embodiment, the pixel 110h has the same configuration as the pixel 110e in the fifth embodiment, except for the configurations of the shield electrode 126 and the light blocking electrode 157. Therefore, the display device with a touch detection function according to the present embodiment has the same effects as those of the fifth embodiment.

[0170] Ninth embodiment: In this embodiment, the sensor electrode embedded in the transparent resin substrate has a diamond-shaped electrode shape. 1 shows an example of a display device with a touch detection function having: In the following description, a description of the same parts as in the first and second embodiments will be omitted, and the description will focus on the different parts.

[0171] FIG. 36 shows a planar structure of the first sensor electrode 114 and the second sensor electrode 116 constituting a mutual capacitance type capacitive touch sensor. The first sensor electrode 114 is a receiver electrode (Rx electrode) and sequentially outputs a detection signal (Vdet). On the other hand, the second sensor electrode 116 is a transmitter electrode (Tx electrode) to which a common drive signal (Vcom) is applied. The first sensor electrode 114 has a plurality of diamond electrodes connected in one direction (Y direction shown in FIG. 36), and the second sensor electrode 116 has a plurality of diamond electrodes connected in a direction intersecting the one direction (X direction shown in FIG. 36). Although not shown in FIG. 36, the first sensor electrode 114 and the second sensor electrode 116 are provided in different layers with an insulating layer interposed therebetween. The first sensor electrode 114 and the second sensor electrode 116 are formed of a transparent conductive film or a metal film. When a transparent conductive film is used, the first sensor electrode 114 and the second sensor electrode 116 are formed in a diamond-shaped solid pattern. On the other hand, when a metal film is used, they are formed in a mesh pattern with openings formed in accordance with the pixel arrangement. In either case, by employing diamond-shaped electrodes, the first sensor electrode 114 and the second sensor electrode 116 can be arranged closely.

[0172] Figures 37(A) and 37(B) show an example of a pixel 110i of a display device with a touch detection function in which the diamond-shaped electrode shown in Figure 36 is embedded in a transparent resin substrate 124b. Figure 37(A) shows a cross-sectional structure corresponding to the A1-A2 line shown in Figure 4, and Figure 37(B) shows a cross-sectional structure along the B1-B2 line shown in Figure 4. The configurations of the drive transistor 138 and the organic EL element 134 shown in Figure 37(A) and the selection transistor 136 and the capacitance element 140 shown in Figure 37(B) are similar to those in the first embodiment.

[0173] The transparent resin substrate 124b has a structure in which the first transparent resin layer 150a, the first sensor electrode 114, the inorganic insulating layer 151, the second sensor electrode 116, the third transparent resin layer 150c, the shield electrode 126, and the fourth transparent resin layer 150d are laminated. When the solid pattern of the second sensor electrode 116 used as a transmitter electrode (Tx electrode) is arranged so as to overlap with the driving transistor 138, it is preferable that the second sensor electrode 116 is provided with an opening 119 in accordance with the arrangement of the driving transistor 138. By providing the opening 119, it is possible to prevent the electric field generated by the driving signal applied to the second sensor electrode 116 from affecting the first gate electrode 154 of the driving transistor 138. Also in this embodiment, in order to distance the first gate electrode 154 from the second sensor electrode 116, it is preferable that the film thickness of the third transparent resin layer 150c is 10 μm or more, preferably 15 μm or more.

[0174] The first sensor electrode 114 and the second sensor electrode 116 are provided with an inorganic insulating layer 151 interposed therebetween to prevent short circuit. As the inorganic insulating layer 151, it is preferable to use an insulating film having a low water vapor permeability and being transparent to visible light, such as a silicon nitride film or an aluminum oxide film. The inorganic insulating layer 151 may have a film thickness of 100 nm to 300 nm, and is formed on substantially the entire surface of the transparent resin substrate 124b. By providing such an inorganic insulating layer 151 in the transparent resin substrate 124b, it is possible to improve the barrier property against water vapor. This makes it possible to suppress deterioration of the organic EL element 134 provided on the transparent resin substrate 124b.

[0175] The relative dielectric constant of the silicon nitride film is 6 to 8, and the relative dielectric constant of the aluminum oxide film is 8 to 10, which are higher than those of the transparent resin layer (for example, the relative dielectric constant of polyimide resin is 4 to 5). Furthermore, the inorganic insulating layer 151 is formed with a thickness of 100 nm to 300 nm, so that The capacitance formed can be increased, thereby increasing the sensitivity of the touch sensor 108. In this way, the display device with a touch detection function according to this embodiment can improve moisture resistance and increase the sensitivity of the touch sensor, in addition to the effects achieved by the display device with a touch detection function according to the first embodiment.

[0176] Fig. 38(A) and Fig. 38(B) show an example of a pixel 110j of a display device with a touch detection function in which the diamond-shaped electrode shown in Fig. 36 is embedded in a transparent resin substrate 124b. Fig. 38(A) shows a cross-sectional structure corresponding to the A3-A4 line shown in Fig. 19, and Fig. 38(B) shows a cross-sectional structure along the B3-B4 line shown in Fig. 19.

[0177] The configurations of the drive transistor 138 and the organic EL element 134 shown in Fig. 38(A) and the selection transistor 136 and the capacitance element 140 shown in Fig. 38(B) are the same as those in the second embodiment. The transparent resin substrate 124 has the same configuration as that shown in Fig. 37(A) and Fig. 37(B) except that the shield electrode 126 is provided on substantially the entire surface. Therefore, the display device with a touch detection function according to this embodiment not only exhibits the same effects as the display device with a touch detection function according to the second embodiment, but also has improved moisture resistance and can increase the sensitivity of the touch sensor.

[0178] Tenth embodiment: This embodiment shows an example of a display device with a touch detection function in which a sensor electrode embedded in a transparent resin substrate has a diamond-shaped electrode shape. In the following description, the same parts as in the fifth and sixth embodiments will be omitted, and the description will focus on the different parts.

[0179] Figures 39(A) and 39(B) show an example of a pixel 110k of a display device with a touch detection function in which the diamond-shaped electrode shown in Figure 36 is embedded in a transparent resin substrate 124b. Figure 39(A) shows a cross-sectional structure corresponding to the A9-A10 line shown in Figure 27, and Figure 39(B) shows a cross-sectional structure along the B9-B10 line shown in Figure 27. The configurations of the drive transistor 138 and the organic EL element 134 shown in Figure 39(A) and the selection transistor 136 and the capacitance element 140 shown in Figure 39(B) are similar to those in the fifth embodiment.

[0180] The transparent resin substrate 124b has the same configuration as that in the ninth embodiment. Therefore, the display device with a touch detection function according to this embodiment can improve moisture resistance and increase the sensitivity of the touch sensor 108 in addition to the advantageous effects of the display device with a touch detection function according to the fifth embodiment.

[0181] Fig. 40(A) and Fig. 40(B) show an example of a pixel 110m of a display device with a touch detection function in which the diamond-shaped electrode shown in Fig. 36 is embedded in a transparent resin substrate 124b. Fig. 40(A) shows a cross-sectional structure corresponding to line A11-A12 shown in Fig. 30, and Fig. 40(B) shows a cross-sectional structure along line B11-B12 shown in Fig. 30.

[0182] The configurations of the drive transistor 138 and the organic EL element 134 shown in Fig. 40(A) and the selection transistor 136 and the capacitance element 140 shown in Fig. 40(B) are the same as those in the sixth embodiment. The transparent resin substrate 124 has the same configuration as that shown in Fig. 39(A) and Fig. 39(B) except that the shield electrode 126 is provided on substantially the entire surface. Therefore, the display device with a touch detection function according to this embodiment not only exhibits the same effects as the display device with a touch detection function according to the sixth embodiment, but also has improved moisture resistance and can increase the sensitivity of the touch sensor.

[0183] Eleventh embodiment: This embodiment illustrates one aspect of a first sensor electrode 114 and a second sensor electrode 116 that constitute a touch sensor 108.

[0184] FIG. 41(A) shows an example of the first sensor electrode 114. The first sensor electrode 114 shown in FIG. 41(A) includes an electrode portion 121 and a connection portion 123. The electrode portion 121 is a portion that extends from a first end of the display unit 102 along the data signal line 144 to a second end opposite the first end, and the connection portion 123 is a portion that is connected to the second driving circuit 112b in an outer region of the display unit 102. The first sensor electrode 114 is formed of a metal film such as aluminum (Al), titanium (Ti), molybdenum (Mo), copper (Cu), or the like. In the first sensor electrode 114 shown in FIG. 41(A), the electrode portion 121 has a linear pattern, and the connection portion 123 is formed of a solid pattern (all metal). The line width of the pattern of the electrode portion 121 is approximately the same as the line width of the data signal lines 144 arranged in the display portion 102, and the electrode portion 121 is provided at approximately the same intervals (or pitch) as the data signal lines 144.

[0185] Fig. 41(B) shows another example of the first sensor electrode 114. In the first sensor electrode 114 shown in Fig. 41(B), the electrode portion 121 has a lattice pattern. In the lattice pattern in the electrode portion 121, the line width of linear portions parallel to the gate signal line 142 is approximately the same as the line width of the gate signal line 142, and the electrode portions are provided at approximately the same intervals (or pitch) as the gate signal line 142. In the lattice pattern in the electrode portion 121, the line width of linear portions parallel to the data signal line 144 is approximately the same as the line width of the data signal line 144, and the electrode portions are provided at approximately the same intervals (or pitch) as the data signal line 144. Alternatively, the lattice pattern in the electrode portion 121 may have linear portions parallel to the gate signal lines 142 with a line width that is approximately the same as the line width of the gate signal lines 142 and are provided at approximately the same intervals (or pitch) as the gate signal lines 142, and have linear portions parallel to the data signal lines 144 with a line width that is approximately the same as the line width of the data signal lines 144 and are provided at intervals three times that of the data signal lines 144 (or three times the pitch).

[0186] FIG. 42(A) shows an example of the second sensor electrode 116. The second sensor electrode 116 shown in FIG. 42(A) includes an electrode portion 125 and a connection portion 127. The electrode portion 125 is a portion extending from a first end along the gate signal line 142 of the display unit 102 to a second end opposite the first end, and the connection portion 127 is a portion connected to the third driving circuit 112c in an area outside the display unit 102. The second sensor electrode 116 is formed of a metal film such as aluminum (Al), titanium (Ti), molybdenum (Mo), copper (Cu), or the like. In the second sensor electrode 116 shown in FIG. 42(A), the electrode portion 125 has a linear pattern, and the connection portion 127 is formed of a solid pattern (all metal). The line width of the pattern of the electrode sections 125 is approximately the same as the line width of the gate signal lines 142 disposed in the display section 102 , and the electrode sections 125 are provided at approximately the same intervals (or pitch) as the gate signal lines 142 .

[0187] 42(B) shows another example of the second sensor electrode 116. In the second sensor electrode 116 shown in FIG. 42(B), the electrode portion 125 has a lattice pattern. In the lattice pattern in the electrode portion 125, the line width of linear portions parallel to the gate signal lines 142 is approximately the same as the line width of the gate signal lines 142, and the electrode portions are provided at approximately the same intervals (or pitch) as the gate signal lines 142. In the lattice pattern in the electrode portion 125, the line width of linear portions parallel to the data signal lines 144 is approximately the same as the line width of the data signal lines 144, and the electrode portions are provided at approximately the same intervals (or pitch) as the data signal lines 144. Alternatively, the lattice pattern in the electrode portion 125 may have linear portions parallel to the gate signal lines 142 that have a line width that is approximately the same as the line width of the gate signal lines 142 and are provided at approximately the same intervals (or pitch) as the gate signal lines 142, and have linear portions parallel to the data signal lines 144 that have a line width that is approximately the same as the line width of the data signal lines 144 and are provided at intervals three times that of the data signal lines 144 (or three times the pitch).

[0188] In the cases shown in Figs. 41(A), 41(B), 42(A), and 42(B), The first sensor electrode 114 and the second sensor electrode 116 are embedded in the transparent resin substrate 124. For this reason, for example, an alignment marker may be formed from a metal film used when fabricating the first sensor electrode 114 and the second sensor electrode 116. In a later process, the alignment marker is used to align a photomask used when forming the data signal line 144, so that the positions of the first sensor electrode 114 and the data signal line 144 can be precisely aligned.

[0189] The first sensor electrode 114 and the second sensor electrode 116 shown in this embodiment are formed with the same line width and pitch as the gate signal line 142 and the data signal line 144, so that even in a bottom emission type display device with a touch detection function, the touch sensor 108 can be embedded in the transparent resin substrate 124 without reducing the aperture ratio of the pixel. Furthermore, by forming the first sensor electrode 114 and the second sensor electrode 116 from a metal material, it is possible to achieve low resistance.

[0190] This embodiment can be implemented in appropriate combination with the touch sensor of the display device with a touch detection function according to the first to tenth embodiments.

[0191] Twelfth embodiment: This embodiment illustrates one aspect of a first sensor electrode 114 and a second sensor electrode 116 that constitute a touch sensor 108.

[0192] FIG. 43(A) shows an example of the first sensor electrode 114. The first sensor electrode 114 shown in FIG. 43(A) includes an electrode portion 121 having a diamond-shaped electrode pattern and a connection portion 123 provided at one end of the electrode portion 121. The electrode portion 121 is a portion extending from a first end of the display unit 102 along the data signal line 144 to a second end opposite the first end, and the connection portion 123 is a portion connected to the second driving circuit 112b in an area outside the display unit 102. In the first sensor electrode 114 shown in FIG. 43(A), the electrode portion 121 has a linear pattern, and the connection portion 123 is formed of a solid pattern (all metal). The line width of the pattern of the electrode portion 121 is approximately the same as the line width of the data signal line 144 arranged in the display unit 102, and is provided at approximately the same interval (or pitch) as the data signal line 144.

[0193] Fig. 43(B) shows another example of the first sensor electrode 114. In the first sensor electrode 114 shown in Fig. 43(B), the electrode portion 121 has a lattice pattern. In the lattice pattern in the electrode portion 121, the line width of linear portions parallel to the gate signal line 142 is approximately the same as the line width of the gate signal line 142, and the electrode portions are provided at approximately the same intervals (or pitch) as the gate signal line 142. In the lattice pattern in the electrode portion 121, the line width of linear portions parallel to the data signal line 144 is approximately the same as the line width of the data signal line 144, and the electrode portions are provided at approximately the same intervals (or pitch) as the data signal line 144. Alternatively, the lattice pattern in the electrode portion 121 may have linear portions parallel to the gate signal lines 142 with a line width that is approximately the same as the line width of the gate signal lines 142 and are provided at approximately the same intervals (or pitch) as the gate signal lines 142, and have linear portions parallel to the data signal lines 144 with a line width that is approximately the same as the line width of the data signal lines 144 and are provided at intervals three times that of the data signal lines 144 (or three times the pitch).

[0194] FIG. 44(A) shows an example of the second sensor electrode 116. The second sensor electrode 116 shown in FIG. 44(A) includes an electrode portion 125 having a diamond-shaped electrode pattern, and a connection portion 127. The electrode portion 125 is a portion that extends from a first end of the display unit 102 along the gate signal line 142 to a second end opposite the first end, and the connection portion 127 is a portion that is connected to the third drive circuit 112c in an area outside the display unit 102. In the second sensor electrode 116 shown in FIG. 44(A), the electrode portion 125 has a linear pattern, and the connection portion 127 is formed of a solid pattern (all metal). The line width of the pattern of the electrode portion 125 is determined by the width of the electrode portion 125 arranged on the display unit 102. The line width is approximately the same as that of the gate signal lines 142, and the line width is approximately the same as that of the gate signal lines 142, and the line width is approximately the same as that of the gate signal lines 142.

[0195] Fig. 44(B) shows another example of the second sensor electrode 116. In the second sensor electrode 116 shown in Fig. 44(B), the electrode unit 125 having a diamond-shaped electrode pattern has a lattice pattern. The lattice pattern in the electrode unit 125 has linear portions parallel to the gate signal lines 142 with substantially the same line width as the gate signal lines 142, and is provided at substantially the same intervals (or pitch) as the gate signal lines 142. The lattice pattern in the electrode unit 125 has linear portions parallel to the data signal lines 144 with substantially the same line width as the data signal lines 144, and is provided at substantially the same intervals (or pitch) as the data signal lines 144. Alternatively, the lattice pattern in the electrode portion 125 may have linear portions parallel to the gate signal lines 142 that have a line width that is approximately the same as the line width of the gate signal lines 142 and are provided at approximately the same intervals (or pitch) as the gate signal lines 142, and have linear portions parallel to the data signal lines 144 that have a line width that is approximately the same as the line width of the data signal lines 144 and are provided at intervals three times that of the data signal lines 144 (or three times the pitch).

[0196] In this embodiment, the first sensor electrode 114 and the second sensor electrode 116 are formed of a metal film such as aluminum (Al), titanium (Ti), molybdenum (Mo), copper (Cu), or the like. This can reduce the resistance of the first sensor electrode 114 and the second sensor electrode 116. Furthermore, as in the eleventh embodiment, alignment markers can be built into the transparent resin substrate 124 when the first sensor electrode 114 and the second sensor electrode 116 are fabricated, so that the alignment accuracy with the gate signal line 142 and the data signal line 144 can be improved.

[0197] The first sensor electrode 114 and the second sensor electrode 116 shown in this embodiment are formed with the same line width and pitch as the gate signal line 142 and the data signal line 144, so that even in a bottom emission type display device with a touch detection function, the touch sensor 108 can be embedded in the transparent resin substrate 124 without reducing the aperture ratio of the pixel. Furthermore, by forming the first sensor electrode 114 and the second sensor electrode 116 from a metal material, it is possible to achieve low resistance.

[0198] This embodiment can be implemented in appropriate combination with the touch sensor of the display device with a touch detection function according to the first to tenth embodiments.

[0199] Thirteenth embodiment: This embodiment shows one aspect of the first sensor electrode 114 and the second sensor electrode 116 constituting the touch sensor 108, and shows a configuration corresponding to the pixel array of a diamond pen tile.

[0200] FIG. 45(A) shows an example of the first sensor electrode 114. The first sensor electrode 114 shown in FIG. 45(A) has a band-like shape formed of a metal film, and includes a connection portion 123 and an electrode portion 121. The electrode portion 121 has a mesh pattern that matches the pixels arranged in a diamond pentatile array. The metal mesh is arranged corresponding to an area in the pixel array that does not emit light. The connection portion 123 is formed of a solid pattern (all metal) of a metal film. In FIG. 45(B), the electrode portion 121 of the first sensor electrode 114 has a diamond-shaped electrode pattern, and has a mesh pattern that matches the pixels arranged in a diamond pentatile array.

[0201] FIG. 46(A) shows an example of the second sensor electrode 116. The first sensor electrode 114 shown in FIG. 46(A) has a strip-like shape formed of a metal film, and includes a connection portion 127 and an electrode portion 125. The electrode portion 125 has a mesh pattern that matches the pixels arranged in a diamond pentatile pattern. The metal mesh is arranged in correspondence with the areas of the pixel array that do not emit light. The connection portion 127 is formed of a solid pattern of a metal film (all metal). In Fig. 46(B), the electrode portion 125 of the second sensor electrode 116 has a diamond-shaped electrode pattern and has a mesh pattern that matches the pixels arranged in a diamond pentagonal pattern.

[0202] The mesh pattern of the electrode units 121 and 125 may have an opening pattern surrounding a set of two subpixels corresponding to green, one subpixel corresponding to red, and one subpixel corresponding to blue (a set of subpixels). The mesh pattern may have an opening pattern surrounding four or nine of the set of subpixels.

[0203] The first sensor electrode 114 shown in FIG. 45(A) and the second sensor electrode 116 shown in FIG. 46(A) are arranged to overlap with an insulating layer interposed therebetween. In this case, the mesh pattern of the electrode portion 121 of the first sensor electrode 114 and the mesh pattern of the electrode portion 125 of the second sensor electrode 116 may be arranged to overlap with each other. Alternatively, the mesh pattern of the electrode portion 121 and the mesh pattern of the electrode portion 125 may be shifted from each other. In any case, by arranging the mesh pattern so as not to overlap with the light-emitting region of the pixel, it is possible to prevent the aperture ratio of the pixel from decreasing. In addition, by surrounding the pixel with a metal mesh pattern, it functions as a light-shielding film (also called a black matrix), and image quality can be improved.

[0204] This embodiment can be implemented in appropriate combination with the touch sensor of the display device with a touch detection function according to the first to tenth embodiments.

[0205] Fourteenth embodiment: This embodiment shows one aspect of a connection structure between the first sensor electrode 114, the second sensor electrode 116 and the lead-out wiring.

[0206] 47(A) shows an example of a connection structure between the first sensor electrode 114 and the first lead-out wiring 194a. The first sensor electrode 114 is connected to the first lead-out wiring 194a in the outer region of the display unit 102. The first sensor electrode 114 is provided between the first transparent resin layer 150a and the second transparent resin layer 150b, and the first lead-out wiring 194a is provided on the upper layer side of the fourth transparent resin layer 150d.

[0207] As shown in FIG. 47(A), a first insulating layer 158, a second insulating layer 164, and a planarizing layer 172 are laminated on a fourth transparent resin layer 150d, and a second electrode 192 is provided on the planarizing layer 172. Furthermore, FIG. 47(A) shows an aspect in which a sealing layer 128 is provided on the upper layer side of the second electrode 192. The sealing layer 128 may have any configuration, but this embodiment shows a structure in which a carbon nitride film 196a, a silicon nitride film 198, and a carbon nitride film 196b are laminated in this order. The carbon nitride film 196 is a polymerized film produced by a plasma polymerization film method using a hydrocarbon gas such as methane (CH4) and a gas such as nitrogen (N2) or ammonia (NH3) as raw material gases. On the other hand, the silicon nitride film 198 is produced by a plasma CVD method using silane (SiH4), ammonia (NH3), and nitrogen (N2) as raw material gases. A plasma polymerized film such as the carbon nitride film 196 has characteristics such as no pinholes, excellent step coverage, and small internal stress. By combining the carbon nitride film 196 and the silicon nitride film 198, a sealing layer 128 with excellent water vapor barrier properties can be obtained.

[0208] The first outgoing wiring 194a is electrically connected to the first sensor electrode 114 by a contact hole 195 penetrating the second transparent resin layer 150b, the third transparent resin layer 150c, and the fourth transparent resin layer 150d. The first outgoing wiring 194a is drawn to the outside of the planarizing layer 172 and the sealing layer 128. The first outgoing wiring 194a is exposed from the sealing layer 128. In some areas, the terminal electrode 118 may be formed so as to be continuous with the terminal electrode 118 .

[0209] FIG. 47(A) shows an aspect in which the transparent resin substrate 124 is provided on the support substrate 200, and a dividing region 202 is provided in the vicinity of the terminal electrode 118. The dividing region 202 is a groove penetrating the transparent resin substrate 124. Such a dividing region 202 is produced, for example, by laser processing. The dividing region 202 is formed as a continuous open groove so as to surround the display panel. After the dividing region 202 is formed, the transparent resin substrate 124 can be peeled off from the support substrate 200 by performing laser ablation as described in the first embodiment.

[0210] The first transparent resin layer 150a is preferably made of a transparent polyimide resin. The transparent polyimide resin is softer than the transparent para-polyamide resin and has high heat resistance, so that it has the advantage that no altered layer is generated even when laser ablation is performed. On the other hand, the fourth transparent resin layer 150d is preferably made of a transparent para-polyamide resin. The first lead wiring 194a and the terminal electrode 118 shown in FIG. 1 are provided on the upper surface of the fourth transparent resin layer 150d. The transparent para-polyamide resin is harder than the polyimide resin, so that it is possible to prevent the metal film forming the first lead wiring 194a and the terminal electrode 118 from peeling off. In addition, even if the flexible printed wiring board 122 as shown in FIG. 1 is thermocompression-bonded to the terminal electrode 118, the deformation of the transparent resin board 124 can be suppressed.

[0211] 47(B) shows an example of a connection structure between the second sensor electrode 116 and the second lead-out wiring 194b. The second sensor electrode 116 is connected to the second lead-out wiring 194b in the outer region of the display unit 102. The second sensor electrode 116 is provided between the second transparent resin layer 150b and the third transparent resin layer 150c, and the second lead-out wiring 194b is provided on the upper layer side of the fourth transparent resin layer 150d. From the viewpoint of gas barrier properties that prevent the penetration of water vapor, the fourth transparent resin layer 150d is preferably made of a transparent para-type polyamide resin.

[0212] The second lead-out wiring 194b is electrically connected to the second sensor electrode 116 through a second contact hole 195b penetrating the third transparent resin layer 150c and the fourth transparent resin layer 150d. The second lead-out wiring 194b is led out onto the second insulating layer 164 to be connected to the third driving circuit 112c. Note that the third driving circuit 112c is omitted in FIG. 47(B).

[0213] As shown in Fig. 48(A), the first insulating layer 158 and the second insulating layer 164 may extend to the outside of the planarization layer 172. According to this structure, in a region where the first outgoing wiring 194a is not provided, the second insulating layer 164 formed of an inorganic insulating film and the sealing layer 128 formed of an inorganic insulating film are provided in close contact with each other, as shown in Fig. 48(B). By providing the second insulating layer 164 and the sealing layer 128 in close contact with each other outside the planarization layer 172, it is possible to prevent the intrusion of moisture and the like, and to improve the sealing ability.

[0214] 49, the first lead-out wiring 194a may be electrically connected to the second lead-out wiring 194b (a wiring formed of a transparent conductive film 194b1 and a metal film 194b2) through a third contact hole 195c formed in the second insulating layer 164, the first insulating layer 158, and the fourth transparent resin layer 150d, the second lead-out wiring 194b may be electrically connected to the lead-out wiring 194c through a second contact hole 195b formed in the third transparent resin layer 150c, and the lead-out wiring 194c may be electrically connected to the first sensor electrode 114 through a first contact hole 195a formed in the second transparent resin layer 150b. In this way, by connecting the lead-out wiring 194 in multiple stages through the contact holes formed in each layer of the transparent resin layer 150, the depth of the contact hole per stage can be made shallow, and electrical connection can be reliably formed.

[0215] According to this embodiment, even if the first sensor electrode 114 and the second sensor electrode 116 constituting the touch sensor 108 are embedded in the transparent resin substrate, by providing a contact hole 195 penetrating the transparent resin layer, the lead-out wiring 194 can be led to a higher layer and connected to the terminal electrode 118 and the drive circuit 112. [Explanation of symbols]

[0216] 100... display device with touch detection function, 101... display panel, 102... display section, 104... drive circuit section, 106... terminal section, 108... touch sensor, 110... pixel, 112... drive circuit, 113... video signal processing circuit, 114... first sensor electrode, 115... sensor signal processing circuit, 116... second sensor electrode, 117... circuit block, 118... terminal electrode, 119... opening, 121... electrode section, 122... flexible printed wiring board, 123... connection section, 1 24 transparent resin substrate, 125 electrode portion, 126 shield electrode, 127 connection portion, 128 sealing layer, 130 transparent conductive film, 132 metal film, 134 organic EL element, 136 selection transistor, 138 drive transistor, 140 capacitance element, 142 gate signal line, 144 data signal line, 146 common wiring, 148 power supply line, 149 circuit element layer, 150 transparent resin layer, 151 inorganic insulating layer, 152 opening, 153 circuit element layer contact hole, 154 first gate electrode, 155 light-shielding electrode, 156 first gate electrode, 157 light-shielding electrode, 158 first insulating layer, 160 transparent conductive layer, 162 oxide semiconductor layer, 163 semiconductor layer, 164 second insulating layer, 165 impurity region, 166 second gate electrode, 168 second gate electrode, 169 drain electrode, 170 capacitance electrode, 171 third insulating layer, 172 planarization layer, 174 silicon nitride film, 176 silicon oxide a contact film, 178 opening, 180 first electrode, 182 electron transport layer, 184 electron injection layer, 186 light emitting layer, 188 hole transport layer, 190 hole injection layer, 192 second electrode, 194 lead wiring, 195 contact hole, 196 carbon nitride film, 198 silicon nitride film, 200 support substrate, 202 separation region, 300 multi-tone mask, 302 multi-tone mask pattern, 304 photoresist film, 306 resist mask pattern

Claims

1. a touch sensor including a first sensor electrode and a second sensor electrode; A display unit overlapping the touch sensor and including a plurality of pixels arranged therein; a first drive circuit that drives the display unit and a second drive circuit that drives the touch sensor; A first transparent resin layer covering the touch sensor; A third electrode between the touch sensor and the display unit, the first drive circuit, and the second drive circuit.

2. A transparent resin layer; The display unit, the first drive circuit, and the second drive circuit on an opposite side to the touch sensor side a sealing layer provided on the surface of the display unit, the first driving circuit, and the second driving circuit, and, Between the touch sensor, the display unit, the first drive circuit, and the second drive circuit A transparent shield electrode; having The first sensor electrode has a plurality of diamond electrode patterns arranged in a first direction; The second sensor electrode has a plurality of diamond electrode patterns intersecting in the first direction. Arranged in two directions, The second sensor electrode is formed through a contact hole penetrating the second transparent resin layer. the second driving circuit is electrically connected to the first driving circuit by an output wiring, The contact hole is sandwiched between the first transparent resin layer and the sealing layer. A touch panel display characterized by:

2. The sealing layer includes at least one silicon nitride layer. The touch panel display according to claim 1 .

3. The first sensor electrode and the second sensor electrode have a region where they intersect with each other via an inorganic insulating layer. do, The touch panel display according to claim 1 .

4. The plurality of diamond electrode patterns of the first sensor electrode and the second sensor electrode The plurality of diamond electrode patterns have a mesh-like opening pattern. The touch panel display according to claim 1 .

5. The mesh-shaped opening pattern is arranged to correspond to each of the plurality of pixels. It is being The touch panel display according to claim 4.

6. The plurality of pixels are arranged in a diamond pentile array, The mesh-like opening pattern corresponds to the diamond pentile array. Located, The touch panel display according to claim 4.

7. Each of the plurality of pixels includes an organic electroluminescent element. The touch panel display according to claim 5 .

8. Each of the first sensor electrode and the second sensor electrode is An electrode portion consisting of a polar pattern and a connection portion consisting of a solid pattern located on the outer side of the display portion Including, The touch panel display according to claim 1 .

9. Each of the plurality of pixels includes an organic electroluminescence element and the organic electroluminescence element. a transistor coupled to the luminescence element; The transparent shield electrode has a light blocking region in a region overlapping with the transistor. R, The touch panel display according to claim 1 .

10. the light blocking region is a metal layer and is in contact with the transparent shield electrode; The touch panel display according to claim 9.

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