LED package and integrated light-emitting device

Abstract

To provide a light-emitting device capable of efficiently widening light in a lateral direction while making the device thin.SOLUTION: A light-emitting device comprises: a substrate; a light source that includes a light-emitting element, is arranged on the substrate, and has a light-emitting surface on its top surface; a coating member that covers a lateral part of the light source, and is made of a resin material containing a light reflection material; a translucent member arranged on the light source; a light reflection layer arranged on the translucent member; and a translucent coating member that covers at least a lateral face of the translucent member, has a thickness on an outer edge of the light reflection layer larger than a thickness on the light reflection layer above an optical axis of the light-emitting element, and includes an annular lens part.SELECTED DRAWING: Figure 1B

Description

[Technical Field]

[0001] The present invention relates to a light emitting device and an LED package. [Background technology]

[0002] A reflecting or diffusing member is provided on the upper surface of the transparent resin that seals the light emitting element, and the light from the light emitting element is A light emitting device is used that irradiates light from the side of a transparent resin to the outside. Since light easily spreads horizontally, it can be used as a light source for backlighting, etc. (For example, Patent Document 1, etc.) [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2012-099145 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-171227 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in backlight applications, it is required to efficiently spread light in the horizontal direction. are. The present invention provides a light-emitting device that can efficiently spread light in the lateral direction while achieving a thin design. The purpose is to provide. [Means for solving the problem]

[0005] Embodiments of the present invention include the following configurations. (1) a light source including a substrate and a light-emitting element, the light source being disposed on the substrate and having a light-emitting surface on its upper surface; a covering member covering the side of the light source and made of a resin material containing a light-reflecting substance; a light-transmitting member disposed on the light source; a light-reflecting layer disposed on the light-transmitting member; and The thickness of the light reflecting layer on the outer edge of the light emitting element is equal to or larger than the optical axis of the light emitting element. a transparent covering member having a thickness greater than that of the light reflecting layer above the transparent covering member and including an annular lens portion; A light emitting device comprising: (2) A light source including a light-emitting element and having a light-emitting surface on the upper surface, a light-transmitting a light-transmitting member and a light-reflecting layer disposed on the light-transmitting member, the light source including a first lead and a second lead; a resin portion that holds the lead, and the first lead, The lead and a part of the resin part form a bottom surface, and a recessed portion forms a side wall. An LED package having a resin package and a light emitting element placed on the bottom surface of the recess. [Effects of the Invention]

[0006] According to the present invention, it is possible to provide a light emitting device that can spread light in the horizontal direction more efficiently. This can be done. [Brief explanation of the drawings]

[0007] [Figure 1A] 1 is a schematic perspective view showing a light emitting device according to one embodiment of the present invention. [Figure 1B] FIG. 1B is a schematic cross-sectional view taken along the line II' of FIG. 1A. [Figure 1C] FIG. 10 is a schematic cross-sectional view of a light-emitting device according to another embodiment of the present invention. [Figure 2] FIG. 10 is a schematic cross-sectional view showing a light-emitting device according to another embodiment of the present invention. [Figure 3A] 1C is a schematic cross-sectional view showing an enlarged portion of the light-emitting device of FIG. 1B. [Figure 3B] 3B is a schematic diagram showing a part of the light emitting device of FIG. 3A viewed from below. FIG. [Figure 4] FIG. 10 is a schematic cross-sectional view showing an enlarged portion of a light-emitting device according to another embodiment. [Figure 5A] FIG. 10 is a schematic cross-sectional view showing an enlarged portion of a light-emitting device according to another embodiment. [Figure 5B] 1C is a schematic cross-sectional view showing an enlarged portion of the light-emitting device shown in FIG. 1B. [Figure 5C] FIG. 10 is a schematic cross-sectional view showing an enlarged portion of a light-emitting device according to another embodiment. [Figure 6A] FIG. 10 is a schematic plan view showing a light emitting device according to still another embodiment. [Figure 6B] FIG. 10 is a schematic plan view showing a light emitting device according to still another embodiment. [Figure 7] 1D is a schematic cross-sectional view showing an integrated light-emitting device having a two-dimensional array of the light-emitting devices shown in FIG. 1C. [Figure 8] 8 is a schematic cross-sectional view showing an enlarged portion of the integrated light-emitting device shown in FIG. 7. FIG. [Figure 9] 9 is a schematic plan view showing an enlarged view of a part of one of the optical laminates used in the integrated light emitting device shown in FIG. 8. FIG. [Figure 10A] FIG. 10 is a schematic plan view showing a light source used in a light emitting device according to another embodiment of the present invention. [Figure 10B] FIG. 10B is a schematic cross-sectional view taken along the line II-II' of FIG. 10A. [Figure 11] 10B is a schematic cross-sectional view showing an LED package according to another embodiment using the light source of FIG. 10A. [Figure 12] FIG. 10 is a schematic cross-sectional view showing a light-emitting device according to still another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The embodiments shown are merely examples for embodying the technical idea of the present invention, and are not intended to limit the present invention. In addition, the size and positional relationship of the components shown in each drawing are for the purpose of clarifying the explanation. The illustration may be exaggerated for clarity and, where necessary, terms indicating a particular direction or position (e.g., "upper," "lower," and other terms that include these terms) are used, but the use of these terms is The meaning of these terms is intended to facilitate understanding of the invention with reference to the aspects. For example, the top view is a view from the Z-axis direction in FIG. 1A. The direction of "up" can be determined based on the Z axis. In principle, the symbols indicate the same or similar components, and redundant explanations are omitted where appropriate. do.

[0009] As shown in FIGS. 1A, 1B, and 1C, a light emitting device 10 according to one embodiment of the present invention includes a substrate 20, The light source 30, the covering member 40, the light-transmitting member 50, the light-reflecting layer 60, and the light-transmitting covering member 70 are included. The light-transmitting covering member 70 includes a lens portion 71, and is formed on at least the side surface 51 of the light-transmitting member 50. The thickness of the light-transmitting covering member 70 on the outer edge of the light-reflecting layer 60 is set to be equal to or less than the thickness of the light-transmitting covering member 70 on the outer edge of the light-reflecting layer 60 as will be described later. The thickness of the light-transmitting coating 60 is thicker than the thickness of the light-reflecting layer 60 above the optical axis of the optical element 31. The member 70 is located on at least a part of the upper surface of the light reflecting layer 60, that is, on the optical axis of the light emitting element 31 (FIG. 6 In B, the upper surface of the light-reflecting layer 60 above A) is exposed. In this way, by using the light-transmitting covering member 70 having the above-described specific shape, the light-reflecting layer 6 0 makes it difficult for light from the light source to exit from above (directly above), while the transparent part The light from the light source propagates inside the light-transmitting member 50 and is emitted to the outside mainly from the side surface of the light-transmitting member 50. This allows the light to be efficiently introduced into the light-transmitting covering member 70. As a result, it is possible to achieve a lateral spread of light. In addition, the thickness of the light-transmitting covering member 70 above the center of the light-reflecting layer is zero, or By arranging the lens portion 71 in a thin film, the height of the lens portion 71 can be reduced as a whole. Therefore, the light emitting device has a lens part that is highest above the center of the light reflecting layer, and is therefore made thinner. This can be achieved. Therefore, such a light emitting device can be used as a light source for a backlight, for example, by placing it directly below a light guide plate. When placing the LEDs in a location where they are needed, it is possible to achieve a thin design while still achieving a lateral spread of light. This allows for improved uniformity of the brightness of the light-emitting surface. This makes it possible to propose a lighter and cheaper surface emitting device for use in backlights, etc. It can contribute to the

[0010] (Substrate 20) The substrate 20 is a member for mounting the light source 30. As shown in FIGS. 1B and 1C, 30, and a base 22 on which the wiring 21 is arranged. A covering layer 23 that covers a part of the wiring 21 may be optionally provided. The base 22 is made of, for example, phenol resin, epoxy resin, polyimide resin, BT resin, Resins such as polyphthalamide (PPA), polyethylene terephthalate (PET), ceramics Among them, from the viewpoint of low cost and ease of molding, Resin may also be used. In order to obtain a light emitting device with excellent heat resistance and light resistance, ceramic may be used. The substrate 22 may be made of ceramics such as alumina, Mullite, forsterite, glass ceramics, nitrides (e.g., AlN), carbides Among them, those made of alumina or mainly made of alumina are preferred. Ceramics containing the component are preferred. When resin is used as the material for the base 22, glass fiber, SiO2, TiO2, By mixing inorganic fillers such as Al2O3 into the resin, mechanical strength is improved, thermal expansion is reduced, and light reflection is improved. In addition, the substrate 20 has an insulating portion formed on a metal member. It may also be something.

[0011] The wiring 21 is electrically connected to the electrodes of the light source 30 and supplies current (power) from the outside. It is a component for this purpose and has at least two or more separated patterns, one positive and one negative. The wiring 21 is formed on at least the upper surface of the substrate 20, which serves as a mounting surface for the light source 30. The material of 21 can be appropriately selected depending on the material of the base 22. For example, When ceramics is used as the material for the wiring 21, the material is a sintered ceramic sheet. Materials with high melting points that can withstand the high temperatures are available. For example, tungsten, molybdenum, It is preferable to use a metal with a high melting point such as tungsten. The metal may be coated with a metal material such as nickel, gold, or silver by coating, vapor deposition, or the like. When resin is used as the material of the base 22, the material of the wiring 21 is preferably a material that is easy to process. In addition, when the base 22 is made of injection-molded resin, the wiring 21 The material is easy to process by punching, etching, bending, etc., and is relatively large. Examples of materials that have high mechanical strength include copper, aluminum, gold, silver, and tungsten. Metal plates such as stainless steel, iron, nickel, iron-nickel alloy, phosphor bronze, iron-containing copper, molybdenum, etc. The surface of the substrate may be further coated with a metal material. Examples of metal materials include silver or alloys of silver with copper, gold, aluminum, rhodium, etc. The coating can be a single layer or a multilayer structure. It can be coated by plating, sputtering, vapor deposition, etc. can be done.

[0012] The covering layer 23 is usually made of an insulating material. It is preferable to cover the light source 30 and the portions electrically connected to other materials. The light emitting element can be formed of a material that absorbs little light from the light emitting element. Epoxy, silicone, modified silicone, urethane resin, oxetane resin, acrylic, polycarbonate Carbonate, polyimide, etc. The covering layer 23 is formed only for the purpose of insulating the wiring 21. By incorporating white fillers, light leakage and absorption are prevented, and reflection is reduced. As a result, the light extraction efficiency can be improved. 0 (for example, as shown in FIG. 1B), the adhesiveness with the light-transmitting covering member 70 is improved. It is possible.

[0013] (Light source 30) The light source 30 includes a light emitting element 31. The light source 30 is disposed on the substrate 20. When the light source 30 is composed of only the light emitting element 31, the upper surface 31c of the light emitting element 31 is In the present specification, as shown in FIG. 3A, the light emitting element 31 is formed on the substrate 2. The surface on the 0 side is the lower surface 31b, the surface facing the lower surface or the surface on the opposite side is the upper surface 31c, and the surface adjacent to the upper surface 31c. The surfaces of the other members are referred to as side surfaces, bottom surfaces, and top surfaces in the same manner. Sometimes I do. As shown in FIGS. 3A, 3B, 4, etc., the light source 30 includes a wavelength conversion unit on a light emitting element 31. Preferably, the light source 30 includes the materials 34 and 84. The light source 30 also includes the materials 34 and 84 on the side of the light emitting element 31 (see FIG. 3A). , 31a)。 Preferably, the fourth light-transmitting member 35 covers the fourth light-transmitting member 35.

[0014] (Light emitting element 31) The light emitting element 31 includes a semiconductor laminate 32 and a pair of electrodes 33p on one surface of the semiconductor laminate 32. , 33n. The light emitting element 31 has an upper surface 31c side (a light source configured only by the light emitting element). When viewed from the light source side (when viewed from the light source side), the planar shape is a polygon such as a square or hexagon. Among them, the light emitting element 31 may have a planar shape of As shown in FIG. 3B, a quadrilateral shape, particularly a square shape or a shape close to this, is preferable. The semiconductor laminate 32 includes semiconductor layers including a light-emitting layer. The semiconductor laminate may include a first conductivity type semiconductor layer (for example, an n-type semiconductor layer). a light-emitting layer (active layer) and a second conductivity type semiconductor layer (for example, a p-type semiconductor layer) Examples of the semiconductor layer capable of emitting ultraviolet light and visible light ranging from blue light to green light include: III-V compound semiconductors, specifically In X Al Y Ga 1-X-Y N(0≦X, 0≦Y, X +Y≦1) can be used as a semiconductor layer capable of emitting red light. For this purpose, semiconductors such as GaAs, GaAlAs, GaP, InGaAs, and InGaAsP are used. The thickness of the semiconductor laminate 32 may be, for example, 3 μm to 500 μm. can be done. The electrodes 33p and 33n may be formed with any thickness using materials and configurations known in the art. The electrodes 33p and 33n can be made of, for example, Au, Pt, Pd, Rh, Ni, W, Mo, Single layer or multilayer film of metals such as Cr, Ti, Al, Cu, Sn, Fe, Ag, or their alloys Specifically, these electrodes can be formed from a Ti / R film from the semiconductor layer side. h / Au, Ti / Pt / Au, W / Pt / Au, Rh / Pt / Au, Ni / Pt / Au, Al-Cu alloy / Ti / Pt / Au, Al-Si-Cu alloy / Ti / Pt / Au, Ti / R It can be formed by laminating films such as AuSn, SnAgCu, SnP The electrodes 33p and 33n may have a thickness in the range of 1 μm to 300 μm, for example. The electrode 33 can be formed to a thickness of about 5 μm to 100 μm. The planar shapes of 33p and 33n can be set arbitrarily. The light emitting element 31 is arranged so that the electrodes 33p and 33n face the wiring 21 of the substrate 20. For such connection, the light emitting element 31 has electrodes 33p and 33 A metal layer 36 that functions as an external connection terminal may be connected to the surface of the metal layer 3n. The metal layer 6 preferably has better corrosion resistance and oxidation resistance than the electrodes 33p and 33n. The metal 36 can be made of a high melting point metal such as Ru, Mo, or Ta. The thickness of the layer 36 can be, for example, 10 nm to 50 μm. The underside of the device 10 may be sized to reach the sides or to extend away from the sides. The metal layer is preferably formed by covering a part of the lower surface of the covering member 40, which will be described later. This allows the light emitting element to be positioned on the underside of the light emitting device. It can be exposed to the outside as an external connection terminal with a larger area than the electrode. Then, the light emitting element 31 or the light source 30 is attached to the substrate 20 using a joining member 24 such as solder. When mounting, it is possible to mount with high positional accuracy. The bonding strength with the light source 30 can be improved.

[0015] (wavelength conversion members 34, 84) The wavelength conversion members 34 and 84 absorb the light from the light emitting element 31 and convert it into light of a different wavelength. The wavelength conversion members 34 and 84 are members that are formed on the light emitting surface (upper surface) of the light emitting element 31. 31c) and below the light-transmitting member 50, which will be described later. By disposing the member 34, the light from the light emitting element 31 and the wavelength conversion element 32 are transmitted to the light-transmitting member 50. The light source 30 includes a light emitting element 31 and a wavelength conversion member 34. When the wavelength conversion members 43 and 84 are configured, the upper surfaces of the wavelength conversion members 43 and 84 are the light emitting surfaces of the light source 30. The light surface is 31L. The wavelength conversion members 34 and 84 cover the entire light emitting surface (upper surface 31c) of the light emitting element 31. Preferably, as shown in FIG. 3A, the wavelength conversion member 34 has a thickness of It is preferable that the outer edge 34a is disposed outside the outer edge 31g of the light emitting element 31. The planar shape of the wavelength conversion member may be a polygon such as a square or a hexagon, a circle, an ellipse, or the like. The plane area of the wavelength conversion member 34 is, for example, the light emitting surface (upper surface 31c) of the light emitting element 31. ) and is preferably 110% to 160% of the plane area of the It is more preferable that the wavelength conversion member 34 has a center (or center of gravity) of The light emitting element 31 can be disposed so as to overlap with the center (or center of gravity) of the light emitting surface (upper surface 31c) of the light emitting element 31. This is preferable. The width of the outer periphery of the member 34 can be made substantially constant, and the occurrence of color unevenness can be suppressed. It is preferable that the upper and lower surfaces are parallel to each other. The surface may be either a curved surface or a flat surface. The thickness of the wavelength conversion members 34 and 84 depends on the type and amount of the phosphor used, the desired chromaticity, etc. For example, the thickness of the wavelength conversion member 34 is 20 μm to 200 μm. The thickness can be in the range of 100 μm to 180 μm, preferably in the range of 100 μm to 180 μm.

[0016] The wavelength converting members 34 and 84 are made of a base material such as a light-transmitting resin material or glass and a wavelength converting material. It may contain a phosphor, or may be made of ceramics containing a phosphor or a single crystal of a phosphor. The base material may be, for example, a silicone resin, a silicone-modified resin, or an elastomeric resin. Thermosetting resins such as epoxy resin and phenolic resin, polycarbonate resin, acrylic resin, Thermoplastic resins such as methylpentene resin and polynorbornene resin can be used. Silicone resin is suitable for this purpose because of its excellent light resistance and heat resistance. Examples include sintered light-transmitting materials such as aluminum. The phosphor may be any phosphor known in the art. As a phosphor that can be excited by ultraviolet light emitting devices, cerium-activated yttrium-aluminum Aluminum garnet phosphor (YAG:Ce); Cerium activated lutetium Aluminum garnet phosphor (LAG:Ce); europium and / or chromium Activated nitrogen-containing calcium aluminosilicate phosphors (CaO-Al2O3-SiO2); Europium activated silicate phosphor ((Sr,Ba)2SiO4); β-sialo Nitride-based phosphors such as ZnO phosphors, CASN-based phosphors, and SCASN-based phosphors; KSF-based phosphors (K2SiF6:Mn); sulfide-based phosphors, quantum dot phosphors, etc. By combining phosphors with blue or ultraviolet light-emitting elements, various colors of light can be emitted. These phosphors can be used in combination to produce a white light emitting device (e.g., a white light emitting device). When using a plurality of fluorescent materials, they may be mixed to form a single layer, or each fluorescent material may be In addition, the wavelength conversion member may be provided with a layer containing a substance for the purpose of adjusting viscosity, etc. , and various fillers may be contained. For example, as shown in FIG. 4, when the wavelength conversion member 84 has a multi-layer structure, the diffusion layer 8 It is preferable to arrange the layer containing the filler as the uppermost layer. The layers containing different phosphors may be the first layer 81 and the second layer 82 containing different phosphors. For example, the second layer 82 contains a KSF-based phosphor, and the first layer 81 contains a β-sialon phosphor. By incorporating different types of phosphors into multiple layers, By suppressing mutual absorption, wavelength conversion efficiency can be improved, resulting in a light emitting device with high optical output. In the wavelength conversion member 84, the diffusion layer 83 may be, for example, 50 μm to 200 μm. The thickness of the layer containing the phosphor can be adjusted depending on the type and content of the phosphor. For example, the second layer 82 containing the KSF phosphor may be The thickness is 50 μm to 500 μm, and preferably 75 μm to 200 μm. The thickness of the first layer 81 including the body is 10 μm to 100 μm, and 20 μm to 80 μm. preferable.

[0017] The wavelength conversion members 34 and 84 are connected to the light emitting surface (upper surface) of the light emitting element 31 directly or via some other member. The wavelength converting member 34 can be disposed directly on the surface 31c. When the light emitting surface (upper surface 31c) of the light emitting element 31 is brought into contact with the light emitting surface, for example, immediately after bonding at room temperature, The arrangement can be achieved by using a bonding method or the like. When the device is disposed via some kind of member, a light-transmitting adhesive can be used. The transparent adhesive is applied between the wavelength conversion member 34 and the light emitting element 31, for example, and a fourth transparent adhesive is applied between the wavelength conversion member 34 and the light emitting element 31. The conductive member 35 is made of the entire lower surface of the wavelength conversion member 34, which is located opposite to the upper surface thereof, and the light emitting element. In this way, the fourth light-transmitting member 35 may cover a part or all of the side surface 31a of the fourth light-transmitting member 35. By covering the side surface 31a of the light emitting element 31, light is emitted from the side surface 31a of the light emitting element 31. The light can be efficiently guided to the wavelength conversion member 34 and further to the light-transmitting member 50. The wavelength conversion member 34 may be provided on the side surface of the light emitting element 31. In this case, becomes the side surface of the wavelength conversion member. When the fourth light-transmitting member 35 covers the side surface 31a of the light-emitting element 31, 5 is preferably arranged so that it is thickest on the light-emitting surface side and becomes thinner as it approaches the electrode side. Such a thickness gradient may be linear or may be an inwardly concave curve. For example, the thickness of the fourth light-transmissive member 35 on the light-emitting surface side is The length corresponds to the length up to the outer edge 31g of the light-emitting surface (upper surface 31c) of the light-emitting element 31. As a result, the light emitted from the side surface 31a of the light emitting element 31 passes through the fourth light-transmitting member After entering the fourth light-transmitting member 35, the light is guided upward (by the light emitting element 31) by the outer surface of the fourth light-transmitting member 35. The light is reflected in the direction perpendicular to the surface of the fourth light-transmitting member 35 and enters the light-transmitting member 50. By providing the light-transmitting member 50, the light from the light-emitting element 31 can be efficiently incident on the light-transmitting member 50. Cut.

[0018] The fourth light-transmissive member 35 can be made of a light-transmissive resin material, such as silicone. The main components are thermosetting resins such as resin, silicone modified resin, epoxy resin, and phenolic resin. The fourth light-transmitting member 35 has a transmittance of 7.0 to the light from the light-emitting element. 0% or more, preferably 80% or more, and more preferably 90% or more. is more preferable. The fourth light-transmissive member 35 covers 50% or more of the side surface 31a of the light-emitting element 31. is preferred. As shown in FIG. 3B, the fourth light-transmissive member 35 preferably has a substantially circular outer shape on the light-emitting surface side. By adopting such a shape, the light emitted from the side surface 31a of the light emitting element 31 can be The fourth light-transmitting member 35 having such a shape can efficiently guide the light to the wavelength converting member 34. The liquid material of the fourth light-transmitting member 35 is poured onto a flat plate-shaped light-transmitting member 50 (described later). It can be formed by welding or the like.

[0019] (Covering member 40) The covering member 40 is a member that covers the side of the light source 30. The covering member 40 is a light reflecting member. It is made of a resin material containing radioactive material. When the light source 30 is composed of only the light emitting element 31, the covering member 40 is It is preferable that the side surface 31a of the light emitting element 31 is covered and a part of the bottom surface 31b of the light emitting element 31 is covered. In addition, the covering member 40 covers at least a portion of each of the pair of electrodes 33p and 33n of the light emitting element 31. The light emitting element 31 is formed so that at least a part (the lower surface, the surface opposite to the semiconductor laminate) is exposed. It is preferable to coat the lower surface 31b of the insulating film. When the light source 30 includes the light emitting element 31, the wavelength conversion member 34, and the fourth light-transmitting member 35, The cover member 40 may cover the side surface of the light emitting element 31 directly or via some other member. It is also preferable that the covering member 40 optionally covers the fourth light-transmissive member 35. In addition, when a part of the side surface of the light emitting element 31 is not covered with the fourth light-transmissive member 35, It is preferable to cover the uncovered side surfaces of the light emitting element 31. It is preferable to cover part or all of the side surfaces and part of the bottom surface of the wavelength conversion member 34. It is more preferable to cover the entire side surface and part of the lower surface of the conversion member 34. The member 40 is formed on the side surface 31 a of the light emitting element 31 , the fourth light-transmitting member 35 , and the side surface of the wavelength converting member 34 . It is more preferable to coat and contact the entire surface and a portion of the undersurface. When the light source 30 is composed of only the light emitting element 31, the upper surface of the covering member 40 is It is preferable that the light source 30 is flush with the upper surface 31c of the light emitting element 31. and the wavelength conversion member 34, the upper surface (light emitting surface 31L) of the wavelength conversion member 34 is flush with the upper surface of the wavelength conversion member 34. However, even in these cases, it is preferable to have a slight difference in height, for example, The height difference can be about 1% to 20% of the thickness of 34. As described above, when the metal layer 36 is connected to the electrodes 33p and 33n, the covering portion The material 40 is arranged so as not to cover the metal layer 36, in other words, so that the metal layer 36 is disposed between the material 40 and the substrate. It is preferable that the electrodes are arranged so that the electrodes can be easily seen. The maximum thickness of the covering member 40 is equal to the total thickness of the light emitting element 31 and the wavelength conversion member 34. The thickness is preferably in the range of 200 μm to 10,000 μm, for example. The thickness is preferably in the range of 300 μm to 600 μm.

[0020] The cover member 40 has a reflectance of 70% or more for the light from the light emitting element 31. It is preferably 80% or more, and more preferably 90% or more. The resin material constituting the covering member 40 is, for example, silicone resin, silicone modified resin, or the like. Examples of resin materials include those whose main component is thermosetting resin such as resin, epoxy resin, and phenolic resin. Examples of light-reflecting materials include white materials, specifically titanium oxide and silicon oxide. , zirconium oxide, potassium titanate, aluminum oxide, aluminum nitride, porosity nitride Examples of the light-reflecting material contained in the resin material include iodine, mullite, etc. The thickness can be appropriately adjusted taking into consideration the size of the light emitting element and the like.

[0021] (Translucent member 50) The light-transmitting member 50 is a member disposed on the light source 30, and is formed together with a light-reflecting layer 60 described later. The light-transmitting member 50 is used to control the light distribution characteristics of the light-emitting device 10. The light emitted from the light emitting surface 31L of the light source can be propagated in the lateral direction. When the light source 30 is composed of only the light emitting element 31, the light-transmitting member 50 When the light source 30 includes a wavelength conversion member 34 on the upper surface of the element, , can be placed directly or via some other member. When the conductive member 50 is brought into contact with the upper surface of the wavelength conversion member 34 or the light emitting element 31, for example, The arrangement can be achieved by using a direct bonding method that bonds at room temperature. In the case of indirect placement, a light-transmitting adhesive can be used. The adhesive may be, for example, the same as that exemplified for the fourth light-transmissive member. The light-transmitting member 50 is preferably a plate-like member whose upper and lower surfaces are parallel to each other, for example. Some or all of the surfaces may be non-parallel. For example, the upper or lower surfaces may have some The height difference may be about 1% to 10% of the thickness of the light-transmitting member 50. The difference in height is allowed. In addition, the upper surface or the lower surface of the light-transmitting member 50 is not angled at an angle of 10 degrees or more with respect to the other. The thickness of the light-transmitting member 50 depends on, for example, the size of the light-emitting element, the wavelength conversion The size and thickness of the switching member, the size of the light emitting device, etc. can be adjusted as appropriate. For example, the light-transmitting member 50 is formed to have a width equal to or larger than the maximum width of the light-emitting surface of the light source (or the wavelength conversion member 34, if any). The thickness is 10% to 80% of the maximum width of the conversion member 34, and preferably 20% to 60%. The thickness of the light-transmitting member 50 can be specifically exemplified as 200 μm to 2000 μm. The thickness is preferably 300 μm to 1000 μm, and more preferably 350 μm to 600 μm. From another perspective, the thickness of the light-transmitting member 50 is set to about 20% to 80% of the thickness of the light-emitting device 10. It is possible.

[0022] By setting the thickness of the light-transmitting member 50 to such a value, the light-emitting device 10 can be The light emitted from the side surface of the light-transmitting member 50 can be emitted farther. The light that is emitted is mainly divided into direct light that travels directly from the light emitting surface 31L of the light source to the side surface of the light-transmitting member 50 and rear light. The light reflected or scattered by the light reflecting layer 60 described later and the light reflected or scattered by the covering member located on the side of the light source are The light reflected or scattered on the upper surface is separated into indirect light that strikes the side surface of the light-transmitting member 50 and is emitted. Of these, the direct light component allows more light to be extracted to the side (horizontal direction) of the light emitting device. In other words, when the light emitting device is viewed in cross section, This allows the light to be emitted diagonally upwards, achieving a batwing-type light distribution characteristic. It is easy to obtain, and the thickness of the light-transmitting member is set to the maximum width of the light-emitting surface 31L (wavelength conversion member). By adjusting the ratio of direct to indirect light, you can create various batwing-type arrangements. It is also possible to easily obtain optical characteristics. It means the horizontal direction, but it does not only mean the horizontal direction, but also the diagonal downward direction, This also includes the diagonally upward direction. The thickness of the light-transmitting member 50 is preferably constant over the entire surface. The side surface of the light-transmitting member 50 is preferably perpendicular to the upper or lower surface. The upper or lower surface may be inclined at an angle of 10 degrees or less, or may be curved, or both. may be combined.

[0023] The plane area of the light-transmitting member 50 is, for example, 100% to 10% of the plane area of the light-emitting surface of the light-emitting element 31. It is preferable that the ratio is 0.00%, and more preferably in the range of 300% to 700%. In addition, the plane area of the light-transmitting member 50 is, for example, 100% to 500% of the plane area of the wavelength conversion member 34. %, and more preferably in the range of 150% to 450%. The center (or center of gravity) of the member 50 is aligned with the center (or center of gravity) of the upper surface of the light emitting element 31 and / or is the center (or center of gravity) of the upper surface of the wavelength conversion member 34, that is, the center (or center of gravity) of the light emitting surface of the light source. It is preferable that the light-transmitting member 50 is disposed so as to overlap with the light-emitting element 3. The larger the area of the light emitting surface and / or the wavelength converting member 34, the easier it is to observe from the light emitting surface. This can reduce color unevenness. The light-transmitting member 50 is in contact with the upper surface of the light-emitting element 31 or the wavelength conversion member 34 directly or through some other member. In addition to contacting the upper surface of the covering member 40 directly or through some other member, It is preferable that the light-transmitting member is provided so as to cover the upper surface of the light-emitting element 31 or the wavelength conversion member. It is preferable that the light-transmitting member 40 is disposed over the entire upper surface of the cover member 40. The light emitting element 31 or the wavelength conversion member and the covering member are integrated to form one upper surface, and The side surface 51 of the light-transmitting member 50 is preferably disposed on the upper surface of the covering member. It is preferable that the surface is flush with the side surface of the light-transmitting member 50. The unevenness of about 1% to 10% of the thickness is allowed. The light is introduced into the light-transmitting member 50 and is efficiently reflected by the light-reflecting layer 60 described later. This makes it easier for light to be extracted from 1 to the outside.

[0024] The light-transmitting member 50 has a transmittance of 70% or more for the light from the light source 30. It is preferably 80% or more, and more preferably 90% or more. The light-transmitting member 50 can be made of a light-transmitting resin material, glass, or the like. Thermosetting resins such as corn resin, silicone modified resin, epoxy resin, and phenolic resin, Polycarbonate resin, acrylic resin, methylpentene resin, polynorbornene resin, etc. Among them, silicone resins are preferred because of their excellent light resistance and heat resistance. It is preferable that the light-transmitting member 50 does not substantially contain a phosphor, which will be described later. It is preferable that the transparent member 50 does not contain any resin material or glass. When the light-transmitting member 50 is made of only glass, scattering of light inside the light-transmitting member 50 is suppressed, and the light-transmitting member 50 is made of only glass, as will be described later. The light reflected by the lower surface of the light reflecting layer 60 and the upper surface of the covering member 40 is efficiently guided to the light transmitting portion. The light can be emitted to the outside from the side surface 51 of the material 50 .

[0025] (Light reflective layer 60) The light-reflecting layer 60 is a member disposed on the light-transmitting member 50. It is preferable that the light reflecting layer 60 covers the entire upper surface of the conductive member 50. It is preferable that the light-transmitting member 50 is disposed in contact with the upper surface of the light-transmitting member 50 via another member. The light reflecting layer 60 reflects light from the light source 30 toward the side surface 51 of the light-transmitting member 50, which is the light-emitting surface. It can be reflected. The light reflecting layer 60 may have a reflectance of 50% or more with respect to the light from the light source 30. The reflectance is preferably 70% or more, and more preferably 90% or more. 0 is a thickness at which the transmittance of light from the light source 30 is 50% or less, 40% or less, or 30% or less. In addition, the light reflecting layer 60 has a transmittance of light from the light source 30 that is greater than 0%. It is preferable that the ratio is 10% or more, and more preferably 10% or more, or 15% or more. By mixing the light emitted from the light-transmitting member and the light partially transmitted through the light-reflecting layer, This can improve the luminance uniformity when viewed from above. The light-reflecting layer 60 may be made of, for example, a resin material containing a light-reflecting substance, a metal material, or a dielectric multilayer film. The light reflecting layer 60 can be formed of an inorganic material using a white material. It is preferable that the light-reflecting member is made of a resin material containing a light-reflecting substance. The light-reflecting material and resin material are selected from those exemplified for the covering member 40. It is preferable to use a metal material with high light reflectance, for example, The dielectric may be one or more of silver, aluminum, rhodium, gold, copper, etc., and alloys thereof. The multilayer film may be made of, for example, titanium oxide, silicon oxide, zirconium oxide, potassium titanate, or Examples of the material include those using aluminum chloride, aluminum nitride, etc.

[0026] The light-reflecting layer 60 has upper and lower surfaces parallel to the light-emitting surface of the light source 30, i.e., has a uniform thickness. It is preferable that the light emitting surface has a rough surface, but the upper or lower surface may have a rough surface. In this way, the light from the light source 30 is directed in the lateral direction of the light emitting device 10. The unevenness on the upper or lower surface of the light-reflecting layer 60 can be, for example, It can be set to about 1% to 20% of the thickness (maximum thickness) of the reflective layer 60. When the light reflecting layer 60 is a layer with varying thickness, the light source 30 is It is preferable that the thickness be such that the transmittance of light from the substrate is 50% or less. When a resin material containing a light-reflecting substance is used as the light-reflecting layer 60, the composition of the light-reflecting substance The light transmittance changes depending on the material and content. For example, when the light-reflecting layer 60 is made of a resin material containing a light-reflecting substance, When the film is formed and has a uniform thickness, the thickness is in the range of 100 μm to 500 μm. It is preferable that the thickness is in the range of 100 μm to 300 μm.

[0027] (Transparent covering member 70) The light-transmitting covering member 70 includes a lens portion 71. The lens portion here refers to a lens that refracts light. This is the part that diverges or converges, and refers to the surface opposite to the surface facing the light source and substrate. The lens portion 71 is usually formed of a spherical or curved surface, and has a ring shape or a ring shape with a recessed central portion. As a result, the light emitting device 10 is It can have a light-emitting surface in a 360-degree direction from the center. The light-transmitting covering member 70 is a part of the lens portion 71 and is configured to transmit light from the light-emitting element 31. Above the axis, the shaft may have a flat or nearly flat surface. The unevenness may be, for example, a roughness on the flat surface of the light emitting element 31. 1% to 20% of the maximum thickness of the light-transmitting covering member 70 disposed on the light-reflecting layer 60 above It can be about %. The light-transmitting covering member 70 covers at least a part or all of the side surface 51 of the light-transmitting member 50. It is also preferable that the light-transmitting covering member 70 covers a part or all of the side surface of the light-reflecting layer 60. Alternatively, the upper surface of the light reflecting layer 60 may be partially or entirely covered, or the covering member 4 1B, a part or all of the transparent covering member 70 may be covered. 0 indicates the entire side surface 51 of the light-transmitting member 50, the entire side surface of the light-reflecting layer 60, and the side surface of the covering member 40. In this case, the light-transmitting covering member 70 has a ring-shaped structure. 1 and 5A, its inner edge, or inner edge 76, is aligned with the outer edge 60 of the light-reflecting layer 60. 1, or as shown in FIGS. 1B and 5B, its inner edge, or inner edge 75, The light-transmitting layer 60 may cover the outer peripheral region 62 of the upper surface of the light-reflecting layer 60. The member 70 covers at least the outer edge 61 of the light-reflecting layer 60 and a part of the upper surface of the light-reflecting layer 60. Here, a part of the upper surface of the light reflecting layer 60 is exposed to the light above the optical axis of the light emitting element 31. Preferably, a reflective layer 60 is included on top.

[0028] Here, the light-reflecting layer 60 is formed of a white resin containing a reflective material, and such a light-transmitting covering member By providing this, it is possible to further improve the luminance uniformity when the light source is viewed from above. For example, when using a backlight, a diffusion sheet or the like can be placed above the light-emitting device. When used as a light reflecting layer, the light reflected by the diffusion sheet or the like is scattered in the light reflecting layer 60. This allows for the production of uniform light without color variations. In this embodiment, the light is emitted from the side surface of the light-transmitting member. The proportion of light that passes through the reflection layer and exits upward is reduced, so the surface viewed from above the light source is In this case, the area on the optical axis of the light emitting element may become darker than other areas. In the case of a surface light emitting device provided with a sheet, etc., when the light emitting surface of the diffusion sheet is viewed from above, In this case, the area on the optical axis of the light emitting element may be dark and may appear as a dark spot. If the light emitting device is used, the dark spots can be reduced, and the brightness can be uniform when viewed from above as a light emitting device or a surface light emitting device. This is because the light-transmitting covering member 70 is formed on the upper surface of the light-reflecting layer 60. When exposing a part of the surface or the entire top surface (when the thickness is zero), it is necessary to improve the brightness uniformity. This can improve unity. When the light-transmitting covering member 70 covers the upper surface of the light-reflecting layer 60 and exposes a part of it, the exposed surface The area may be 100% of the area of the upper surface of the light reflecting layer 60, for example, 50% or more, and preferably 60% or more. In other words, the width of the outer peripheral region 62 (i.e., In FIG. 5B, the distance from the outer edge 61 of the light-reflecting layer 60 to the inner edge 75 of the light-transmitting covering member 70 is 5C or the light-transmitting covering member 7 0 is at least a part of the upper surface of the light reflecting layer 60, that is, above the optical axis of the light emitting element 31. As shown in FIG. 5B, the upper surface of the light-reflecting layer 60 is exposed. When covering the upper surface of the reflective layer 60, the thickness T1 of the outer edge 61 of the light reflective layer 60 is It is preferable that the thickness T2 and T3 of the upper surface of the light emitting element 0 be thicker than those of the upper surface of the light emitting element 1. It is more preferable that the thickness T2 be thicker than the thickness T3 on the light reflecting layer 60 in the above-mentioned step. As shown in FIG. 5A, the inner edge 76 of the light-transmitting covering member 70 is aligned with the outer edge 6 of the light-reflecting layer 60. 1, the thickness T 4 is thicker than the thickness of the upper surface of the light reflecting layer 60 (zero). For example, the maximum thickness (Tx in FIG. 1B) of the light-transmitting covering member 70 in the Z direction is 300 μm to The range is 5000 μm, and the range of 800 μm to 2500 μm is preferred. The maximum width (WX in FIG. 1B) of the light-transmitting covering member 70 on the substrate 20 is set to be equal to the size of the light source 30. The thickness can be adjusted appropriately depending on the brightness, etc., but for example, the range is 1 mm to 10 mm. The thickness is preferably in the range of 2 mm to 8 mm.

[0029] The light-transmitting covering member 70 covers the side surface of the light-transmitting member 50, for example, as shown in FIG. 1B. and a third transparent member that covers the second transparent member 72 and constitutes the lens portion 71. The light-transmitting covering member 70 may include a light-transmitting member 73. As shown in FIG. The fifth light-transmissive member 74 is formed by integrating the second light-transmissive member and the third light-transmissive member with the same material. It may be configured as follows. For example, the second light-transmitting member 72, the third light-transmitting member 73, and The fifth light-transmitting member 74 has a transmittance of 70% or more for light from the light-emitting element. It is preferably 80% or more, and more preferably 90% or more. The second light-transmitting member 72, the third light-transmitting member 73, and the fifth light-transmitting member 74 are the light-transmitting member 50. In particular, the second light-transmissive member 72 can be formed using the same materials as those exemplified in the first embodiment. As the material, from among the materials exemplified for the light-transmitting member 50, a material having a refractive index of It is preferable to select a material that is smaller than the material that constitutes it. This allows the light to be refracted upward, making more effective use of the light from the light source. Furthermore, by using the second light-transmitting member 72, the light-transmitting covering member 70 This can prevent air bubbles from being generated in the lens portion 71 when the potting When the above-mentioned process is performed, it is possible to prevent voids from being trapped. In order to adjust the shape, the viscosity is adjusted by adding a filler to the above-mentioned material. In particular, it is preferable that the viscosity and thixotropy of the third light-transmissive member 73 are the same as those of the second light-transmissive member 73. Preferably, the viscosity and thixotropy are higher than 72. The second light-transmissive member 72 preferably has a different thickness. For example, the second light-transmissive member 72 may be the thickest film on the light-transmissive member 50 side. The thickness of the transparent member 50 is gradually decreased linearly, and the thickness is the thinnest at the portion farthest from the transparent member 50. Such an inclination allows the light emitted from the light-transmitting member 50 to be directed further upward and to the side. It can be expanded to.

[0030] The light-transmitting covering member 70 can be formed by, for example, a method known in the art. However, it is preferable to form the cover member 40, the light-transmitting member 50, and the cover member 40 by potting. For example, a material constituting a light-transmitting covering member is applied to the light source 30 having the light-reflecting layer 60. A method in which the nozzle is moved in a circular motion around the light source while discharging the material. a plurality of nozzles for discharging the material, for example, four, six, or eight, arranged around the light source; A method in which an appropriate amount of material is ejected from each nozzle and the material ejected from adjacent nozzles is connected. By such a method, the light-transmitting covering member 70 can be wrapped in an intended shape. It can be easily formed.

[0031] (Light-reflecting member 41) The light emitting device 10 further includes a substrate 20, a covering member 40, and a light-transmitting covering member 70. It is preferable to provide a light-reflecting member 41. The light-reflecting member 41 is provided on the substrate 20 to reflect light around the light-emitting element 31. Even if an absorbing material is arranged, the light is not absorbed by providing the light reflecting member 41. The absorbent material can be coated to effectively prevent absorption of light from the light source. . The light-reflecting member 41 is formed on any of the substrate 22, the wiring 21, the coating layer 23, the bonding member 24, etc. The light-emitting element 3 may be disposed on the light-emitting element 3, and is preferably disposed on all of the light-emitting elements 3. It is preferable that the light reflective member 41 is also disposed on the substrate 20 directly below the substrate 2. The thickness may be uniform or may vary on the surface. The thickness of the material 41 is greatest near the light source, and gradually decreases linearly. Such a tilt allows the light emitted from the light-transmitting member 50 to be thinnest. This allows the light to be reflected more upward and to the side, Thus, it is possible to provide a light emitting device that emits bright light. When the light-reflecting member 41 is arranged in this manner, a part of the light-transmitting covering member 70 is a light-reflecting portion. The other part is disposed on the covering layer 23 of the substrate 20. However, as shown in FIG. 1C, the entire light-transmitting covering member 70 may be disposed on the light reflecting member 41. In this case, the light reflecting member 41 may be disposed on the substrate 2. 0 to the upper surface of the covering layer 23. It is easy to arrange the parts in the right place and in the right shape. In another embodiment, a cross section of the light emitting device as seen from a perspective view along II' in FIG. 1A is FIG. The viscosity and thixotropy of the light-reflecting member 41 are the same as those of the second light-transmitting member 72. This makes it possible to easily realize the above-mentioned gradient. do.

[0032] The light emitting device 10 described above can be a plurality of light emitting devices arranged on a substrate. In this case, as shown in FIG. 6A, a plurality of light emitting devices 10 may be arranged in a line on a substrate 20. As shown in FIG. 6B, even if a plurality of light emitting devices 10 are arranged in a matrix on a substrate 20, The pitches of the light emitting devices 10 are preferably the same. However, they may be different. The pitch of the light emitting devices 10 can be adjusted appropriately depending on the size, brightness, etc. of the light emitting devices. For example, the pitch (P in FIG. 6A) of the light emitting devices 10 is in the range of 5 mm to 100 mm. The range of 15 mm to 50 mm is preferred.

[0033] FIG. 7 shows an integrated light emitting device having a two-dimensional array of the light emitting devices 10 shown in FIG. 1B or 1C. The integrated light emitting device 200 shown in FIG. 7 has the same structure as that shown in FIG. 1C. The figure contains an array of 16 units with the structure, and these units are arranged in 4 rows and 4 columns in the XY plane of the figure. As shown in the figure, the second reflecting portion 174 includes a plurality of inclined surfaces 174s. The plurality of inclined surfaces 174s extend in the X direction or the Y direction in the drawing, and each light-emitting device The station 10 is surrounded by four of the plurality of inclined surfaces 174s.

[0034] The integrated light emitting device 200 is a surface light source including a plurality of light emitting regions arranged in four rows and four columns. As shown in FIG. 7, each light-emitting device is useful as a backlight for a liquid crystal display device. According to the configuration in which the device 10 is surrounded by a plurality of inclined surfaces 174s, the luminance unevenness in each light-emitting region, Furthermore, it is possible to suppress uneven brightness between groups of light-emitting regions.

[0035] 8 is a cross-sectional view showing one light emitting device 10 of the integrated light emitting device 200. The light emitting device 200 includes a plurality of light emitting devices 10 arranged two-dimensionally. The optical laminate 180 includes, for example, a half mirror 181 and , a diffusion plate 182, and at least one prism sheet 183. In the example shown in FIG. The optical stack 180 further includes a prism sheet 184 and a deflection sheet 185. The laminate 180 is preferably located on the substrate 20 side on which the light emitting device 10 is supported. It is preferable that the prism sheet 183 is located on the light exit surface side. It is preferable that the light source 181 is located between the mirror 181 and the prism sheet 183 .

[0036] The half mirror 181 transmits a part of the light incident from the substrate 20 side and reflects a part of the light incident from the substrate 20 side. FIG. 9 shows a schematic plan view of the half mirror 181. The substrate 1 includes a plurality of holes 181h and 181g provided on the main surface. h and 181g are physical through holes that reach from one main surface to the other, and holes 181h and In the region 181g, the half mirror 181 does not substantially reflect light but transmits it. Therefore, the size, number, and position of the holes 181h and 181g determine the amount of light passing through the half mirror 181. It is possible to set two-dimensional distributions for transmission and reflection characteristics, and the light incident from the substrate side can be The light can be emitted to the diffusion plate 182 while suppressing unevenness in brightness and color. When the light-transmitting element 181 is configured by a light-transmitting substrate and a dielectric multilayer film supported by the substrate, No holes are provided in the substrate, and no dielectric multilayer film is provided in the areas of the holes 181h and 181g. Similar optical properties may be achieved by using a

[0037] In the example shown in FIG. 9, the hole 181h is larger than the hole 181g and surrounds the light emitting device 10 on all four sides. Arranged above the wall portion 174 (the portion of the second light reflecting member 170 that includes the inclined surface 174s) The holes 181g are arranged concentrically with respect to the center of the light emitting device 10. In addition, holes 181g are also arranged at the corners of the rectangular area surrounded by wall portion 174. By placing a large diameter hole 181h above the , light leaks into the adjacent light-emitting element compartment, and the partition is formed at the boundary of the compartment by the wall portion 174. This is causing a decline in the

[0038] The diffusion plate 182 diffuses the light that has passed through the half mirror 181 in the direction of travel, reducing brightness unevenness. The prism sheets 183 and 184 deflect the direction of incident light. The prism sheets 183 and 184 are arranged so that the prisms are perpendicular to each other. By arranging the light sources so that they intersect, the light is emitted more in the front direction, The deflection sheet 185 reflects, for example, S-waves of the incident light and P-waves. By transmitting the light, the polarization direction of the emitted light is aligned, and the light emitted from the light emitting device 10 is Increases brightness in a specific polarization plane. In particular, integrated light-emitting devices as backlights for liquid crystal panels. This is effective when using 200.

[0039] A light source 90 used in a light emitting device according to another embodiment of the present invention is shown in FIGS. 10A and 10B. 9B, the light emitting element 31 is provided with a resin package 95 including a lead 93 and a resin portion 94. The light source 90 may be a light source that includes a lead 93 and a wire 9 that connects the light emitting element 31. 6a, etc. may also be included. The resin portion 94 holds the lead 93. The lead 93 is connected to the first lead 91 and the second lead 9 The resin package 95 includes a first lead 91, a second lead 92, and a resin portion 94. The resin portion 94 has a bottom surface 94b and a recess 94a with a part of the resin portion 94 as a side wall. The upper surface of the side wall has a bottomed opening which can be used as a cathode mark 94c. The cathode mark 94c can also be used as an anode mark. The shape of the recess 94a of the resin part 94 is not particularly limited. For example, when viewed from above, However, examples include quadrilaterals, particularly squares. The light emitting element 31 is disposed on the bottom surface 94b of the recess 94a. Although two light emitting elements are arranged on the bottom surface of the recess, the number of light emitting elements may be one or The planar shape of the light emitting element 31 is not particularly limited, but may be, for example, a rectangular shape. In FIGS. 10A and 10B, both of the two light emitting elements 31 have a first lead. The first lead 91 and the second lead 92 are arranged so as to straddle the first lead 91 and the second lead 92. The two light emitting elements are connected in series. Specifically, the first lead 91 and one light emitting element 31x are connected by a wire 96a. One light emitting element 31x and another light emitting element 31y are connected by a wire 96b. The other light emitting element 31y and the second lead 92 are connected by a wire 96c. For example, metals such as gold, copper, silver, platinum, aluminum, palladium, etc., or one or more of these metals In particular, wires containing both gold and silver can be used. When the wire is a wire containing both gold and silver, the silver content can be, for example, For example, 15% to 20%, 45% to 55%, 70% to 90%, or 95% or more The range can be up to 99%. A sealing member 98 is disposed in the recess 94a, and the upper surface of the sealing member 98 is in contact with the light source. The sealing member 98 may contain a wavelength converting material. A layer of wavelength converting material may be disposed between 8 and light emitting element 31 .

[0040] As shown in FIG. 11, the above-described light source 90 is disposed on the substrate 20, and a transparent substrate is disposed above the light source 90. By disposing the transparent member 50 and disposing the light reflecting layer 60 on the transparent member 50, Package 99 can be configured. The light-transmitting member 50 disposed on the light source 90 has a light-emitting surface 98L and a side wall of the resin portion 94. The light-transmitting member 50 is disposed within the cathode mark 94c of the resin portion 94. In this case, the cathode mark 94c may be disposed in a transparent portion with respect to the resin portion 94. Therefore, the light source 90 and the light-transmitting member 50 can exert an anchor effect. This can strengthen the adhesion between the two. Specifically, the thickness of the light-transmitting member 50 is 200 μm or more and 2000 μm or less. It is preferably 300 μm or more and 1000 μm or less, and more preferably 350 μm or more and 600 μm or less. In addition, when viewed from above, the area of the upper surface of the sealing member 98 and the upper surface of the side wall of the resin portion 94 is The ratio of the area of the upper surface of the sealing member 98 to the area of the upper surface of the sealing member 98 is preferably 0.25 or more and 0.5 or less. .

[0041] As shown in FIG. 12, a light emitting device 11 according to still another embodiment of the present invention includes wiring 21, wiring An LED package including a light source 90 is mounted on a substrate 20 including a base 22 on which wires 21 are disposed and a covering layer 23. The cage 99 is placed, and a light-transmitting coating including an annular lens portion 71 is placed on the LED package 99. A cover member 70 may be provided. The light-transmitting covering member 70 includes a second light-transmitting member 72 that covers the side surface of the light-transmitting member 50, and a second The lens portion 71 may include a third light-transmitting member 73 that covers the light-transmitting member 72 and constitutes the lens portion 71. As described above, the lens portion 71 covers at least the side surface of the light-transmitting member 50 and The thickness of the reflective layer 60 on the outer edge is greater than the thickness of the reflective layer 60 above the optical axis of the light emitting element 31. It's also thick. [Explanation of symbols]

[0042] 10, 11 Light-emitting device 20 PCB 21 Wiring 22 Base 23 Covering layer 24 Joint material 30 light source 31, 31x, 31y light-emitting elements 31L Light-emitting surface 31a side 31b Bottom surface 31c top surface 31g outer edge 32 Semiconductor laminate 33n electrode 33p electrode 34 Wavelength conversion material 34a outer edge 35 Fourth translucent member 36 Metal layer 40 Covering material 41 Light-reflective member 50 Translucent material 51 Side 60 Light reflective layer 61 outer edge 62 Outer area 70 Translucent coating member 71 Lens section 72 Second translucent member 73 Third translucent member 74 5th translucent member 75, 76 Common-law marriage 81 1st layer 82 2nd layer 83 Diffusion Layer 84 Wavelength conversion material 90: Light source 91: 1st lead 92: Second lead 93: Lead 94: Resin part 94a: recess 94b: Bottom 94c: Cathode mark 95: Resin package 96a: Wire 96b: Wire 96c: Wire 98: Sealing member 98L: Light-emitting surface 99: LED package A optical axis 174 Wall 174s slope 170 Second reflecting member 180 Optical laminate 181 Half Mirror 181h, 181g holes 182 Diffuser 183, 184 Prism sheet 185 Deflector Sheet 200 Integrated light-emitting device

Claims

1. a light source including a light emitting element and having a light emitting surface on an upper surface; a light-transmitting member disposed on the light source; a light-reflecting layer disposed on the light-transmitting member at least above the optical axis of the light-emitting element; The light source is leads including a first lead and a second lead; a resin package including a resin portion for holding the leads, a recess having a bottom surface formed by the first lead, the second lead, and a part of the resin portion and a side wall formed by a part of the resin portion; the light-emitting element is placed on a bottom surface of the recess, a wavelength conversion member is disposed in the recess; The resin package and the light-transmitting member constitute at least a part of the outer surface of the LED package, and a side surface of the resin package and a side surface of the light-transmitting member are flush with each other.

2. The LED package according to claim 1 , wherein the light-reflecting layer includes a resin material containing a light-reflecting substance.

3. The LED package according to claim 1 , wherein the light source includes a wire connecting the light emitting element to the first lead or the second lead.

4. The LED package according to claim 3 , comprising two of the light-emitting elements, the two light-emitting elements being connected in series by the wire.

5. 5. The LED package according to claim 1, wherein the light emitting element has a rectangular shape when viewed from above.

6. 6. The LED package according to claim 1, further comprising a sealing member in the recess, the wavelength conversion member being included in the sealing member.

7. 6. The LED package according to claim 1, further comprising a sealing member in the recess, and the wavelength conversion member between the sealing member and the light emitting element.

8. An integrated light emitting device comprising the LED package according to any one of claims 1 to 7 disposed on a substrate.

9. 9. The integrated light emitting device according to claim 8, comprising a plurality of the LED packages, the plurality of LED packages being arranged on the substrate.

10. The integrated light emitting device according to claim 8 or 9, wherein the LED package comprises an optical stack on the side opposite to the substrate.

11. The integrated light emitting device according to claim 10 , wherein the optical laminate includes at least one of a half mirror, a diffusion plate, and a prism sheet.

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