Partial pressure meter assembly and related method for detecting process contaminants using photoionization

Abstract

The photoionization sensor assembly includes a housing defining a chamber having a first end and an opposing second end and transparent to analyte and non-analyte gases. A radiation source is structured to emit photons into the chamber. A first electrode, a second electrode, and a third electrode are disposed within the chamber. The photons ionize the analyte gas but are insufficient to ionize the non-analyte gas, causing photoelectrons to be emitted from the third electrode. A controller is structured to receive a measurement of the total pressure and to electrically bias the electrodes to collect photoelectrons on the first electrode and the second electrode in a ratio that depends on the total pressure. The controller is structured to determine a ratio of photoelectrons collected on the first electrode and the second electrode at the total pressure and to determine an amount of current due to ionization by correcting the measured current using the determined ratio.

Description

[Technical Field]

[0001] (CROSS-REFERENCE TO RELATED APPLICATIONS) This application claims the benefit of and priority to U.S. Provisional Patent Application No. 63 / 332,351, filed April 19, 2022, and entitled "PARTIAL PRESSURE GAUGE FOR PROCESS CONTAMINANT DETECTION USING PHOTOIONIZATION," the entire contents of which are incorporated herein by reference.

[0002] The disclosed invention relates generally to the field of pressure gauges, and more particularly to a partial pressure gauge for use in fault detection in semiconductor process tools, where the gauge utilizes high energy photons to selectively measure contaminants under reduced pressure of an inert gas. [Background technology]

[0003] The fabrication of modern integrated circuits (ICs) begins with high-purity semiconductor wafers, which then undergo hundreds of tightly controlled process steps over a period of weeks or months. After the wafers complete these steps, they are cut into numerous small dies. These dies are then packaged, and the resulting devices, such as ICs, are incorporated into the cores of many modern electronic devices. High-yield production of high-performance semiconductor devices requires strict control of the microenvironment surrounding the wafer. At various manufacturing steps, partially completed devices are at greater or lesser risk of damage as a result of exposure to certain process contaminants. As a first example, exposure to trace amounts of oxygen during the growth of a metal layer responsible for contacting the source or drain regions of a transistor can increase the electrical resistance of this layer and reduce the time constant of the device, potentially reducing yield. As a second example, trace amounts of hydrocarbon contaminants remaining on the wafer surface can degrade components of semiconductor processing tools, such as lithography optics. As a third example, precursor chemicals used for metallization of insulator deposition can be incompletely purged from the chamber or can leak back from the process chamber into the transfer chamber, damaging the wafers being transferred. Therefore, it is important to monitor these contaminants during semiconductor wafer handling, storage, and processing steps.

[0004] Typically, the wafer microenvironment is maintained ultra-clean from contaminants, and while some processes operate at high vacuum (i.e., below 1e-5 Torr), many modern semiconductor processes occur in inert gas flows at much lower vacuums (1-100 Torr). This means that inert gases such as nitrogen, argon, or hydrogen are quite typically present at high levels during process steps. While total pressure measurements indicate the levels of these major species, they do not provide an acceptable indication of trace contaminants, which may be present at parts per million levels. For example, if 1 ppm levels of oxygen are identified in a particular tool step, processing of additional wafers can be halted and defective components, such as chamber O-rings, can be replaced to prevent additional wafer scrap and reduce tool downtime. Similarly, even small levels of organic contaminants on the wafer surface can cause pattern transfer defects, resulting in edge placement errors and other yield impacts. In addition to yield impacts, hydrocarbon contaminants remaining on the wafer surface can also degrade the complex and expensive lithography components required for the latest semiconductor nodes. Replacing damaged optics and masks in this way can be very expensive. All of these yield and tool impacts are important to control in the competitive semiconductor manufacturing industry. Besides contamination, there are other cases where determining trace levels of species in background gases is important, such as determining the etch endpoint.

[0005] Total pressure can be measured with many types of instruments, including Bayard-Alpert ionization gauges, capacitance manometers, and thermocouple gauges, among others. Formally, only manometers measure the true pressure of a gas, while others provide estimates of number densities related to ionization cross section, heat transport, or other properties of the gas. However, it can be roughly said that the most common types of instruments measure gas properties related to the total pressure of the gas, rather than trace constituents.

[0006] This problem of measuring trace components has traditionally been solved by using a specialized type of "ion gauge" called a residual gas analyzer (RGA, e.g., a type of mass spectrometer). Like ion gauges such as Bayard-Alpert gauges, RGAs use a high-energy electron beam to convert neutral species into ions. Typical electron energies of 70–100 eV are sufficient to ionize all gas molecules with some probability. RGAs include a mass filter to separate these ions by their different mass-to-charge ratios (m / z). By correlating m / z with the different gases present in the microenvironment and combining it with the ionization cross-section and the sensor's m / z sensitivity factor, it can be used to estimate the partial pressure of different contaminant molecules, even if they are present at low levels (i.e., 1 ppm) in the majority of gases. Unfortunately, the use of mass spectrometry is not directly applicable to modern semiconductor processes, which operate at pressures between 1 and 100 Torr. This is because most RGAs require low pressures (<1e-4 Torr) to operate. Briefly, RGAs require low pressure to operate the filament (cathode). At pressures above 1e-4 Torr, space charge begins to mask the filament from its extraction field. In addition, ion bombardment and oxidation can erode the filament material. Another problem with RGAs is that low pressure is required to limit the effects of ion-molecule collisions in the mass spectrometer and to avoid ion feedback or plasma discharge in the secondary electron multiplier. Therefore, installing an RGA in many modern semiconductor tools or process steps requires additional pumping. This increases cost, slows response time, and requires significant space around the already crowded semiconductor reactor chamber. It is also expensive. There remains a need to measure the partial pressure of trace contaminants in these high-pressure microenvironments.

[0007] Additional challenges exist for instruments designed to operate at higher pressures (above approximately 1 Torr). In this pressure range, the mean free path of gas molecules is typically very short compared to the sensor dimensions. Because pressure fronts propagate at the speed of sound, changes in total pressure can be detected quickly. However, determining the partial pressure of trace species at a specific point in the chamber relies on the diffusion or transport of those species to the instrument. Therefore, the partial pressure gauge must be able to be installed near the area of interest; otherwise, the sensor will not respond quickly enough to address many common problems in the semiconductor industry. In the case of certain gases flowing at high velocities, for example, the instrument may miss leaks or contaminants entirely because the contaminants are diluted by the time they reach a sensor installed in the foreline. Furthermore, given the very limited space around semiconductor tools, it is important to design sensors that can communicate closely with the area of concern.

[0008] These are just some of the problems associated with traditional partial pressure gauges such as total pressure gauges and RGAs. Summary of the Invention

[0009] The present disclosure is directed to a sensor gauge assembly that can be inserted directly into a process environment. One embodiment of a partial pressure ion gauge includes an electrical feedthrough flange, a plasma generation envelope, and a series of electrodes. A dielectric housing supports ion and electron lenses and contains the plasma generation envelope entirely inside the process environment.

[0010] Rather than using a hot cathode filament for ionization, as is typical of the RGAs described above, the sensor disclosed herein utilizes a lamp consisting of a self-contained plasma to generate high-energy photons. The plasma envelope contains a sample of krypton gas at reduced pressure, but it can also contain argon, xenon, or other gases. A high electric field generated between two electrodes patterned on the outside of the plasma envelope, or otherwise positioned near the envelope, couples energy into the contained gas, thereby creating a plasma that emits light as excited plasma species return to their lower-energy state. The envelope can be any dielectric that is hermetically sealed and can withstand the pressure difference between the plasma and the process. For example, it can be a molded piece of alumina. However, the most typical plasma source is constructed from blown Pyrex® glass. Regardless of the material comprising the plasma source, a UV-transparent crystal is present on one side of the lamp. This crystal is constructed from a material that is transparent to high-energy photons. In various embodiments, the crystal may be composed of magnesium fluoride, calcium fluoride, or lithium fluoride, or some other suitable material. Also, ionization may be selective, as is known from conventional photoionization sensors designed for operation in high-pressure environments (e.g., atmospheric pressure). Generally, the photon energy of a krypton discharge is equal to or greater than the first ionization energy of most organic molecules, but is not sufficient to ionize nitrogen or argon or hydrogen.

[0011] An embodiment of the gas sensor includes the gas envelope inside the flange. The gas envelope may be constructed from alumina. In one embodiment, the optical element comprises sapphire.

[0012] One embodiment of a sensor assembly for measuring the total pressure of a gas includes a housing defining a chamber having a first end and an opposing second end. The chamber is transparent to molecules of the gas surrounding the housing. A radiation source is structured to emit photons into the chamber. A first electrode is disposed relative to the first end of the chamber, a second electrode is disposed within the chamber, and a third electrode is disposed relative to the second end of the chamber. A controller is in communication with at least the first and second electrodes. The photons emitted into the chamber cause the third electrode to emit photoelectrons. The controller is structured to electrically bias the first, second, and third conductors such that the emitted photoelectrons are attracted toward and collected on the first and second electrodes at a rate that depends on the total pressure of the gas, and the photoelectrons generate currents on the first and second electrodes. The controller is further structured to measure the currents generated on the first and second electrodes and determine the total pressure of the gas based on the currents generated on the first and second electrodes.

[0013] In one embodiment, the radiation source is disposed against a first end of the chamber. In one embodiment, the second end of the chamber is at least partially open to the ambient environment. In one embodiment, the third electrode comprises gold. In one embodiment, the radiation source is at least partially surrounded by a housing. In another embodiment, the ratio of the distance between the first electrode and the second electrode to the distance between the second electrode and the third electrode is about 8:1. In a further embodiment, at least one of the first electrode, the second electrode, and the third electrode comprises a grid.

[0014] One embodiment of a photoionization sensor assembly structured to measure an analyte gas in the presence of a non-analyte gas includes a housing defining a chamber having a first end and an opposing second end. The chamber is transparent to molecules of the analyte gas and the non-analyte gas surrounding the housing. A radiation source is structured to emit photons into the chamber. A first conductive electrode is disposed relative to the first end of the chamber, a second conductive electrode is disposed within the chamber, and a third conductive electrode is disposed relative to the second end of the chamber. A controller is in communication with at least the first and second conductive electrodes. The emitted photons ionize at least some molecules of the analyte gas, but are insufficient to ionize molecules of the non-analyte gas. The emitted photons further strike the third conductive electrode, emitting photoelectrons. The controller is configured to receive measurements of the total pressures of the analyte and non-analyte gases and to electrically bias the first, second, and third conductive electrodes such that photoelectrons are attracted toward and collected on the first and second conductive electrodes in a ratio that depends on the total pressures of the analyte and non-analyte gases. The controller is further configured to measure currents generated on the first and second conductive electrodes and to determine a ratio of emitted photoelectrons that are collected on the first and second conductive electrodes at the total pressure. The controller is further configured to determine an amount of current due to ionization of the analyte gas by correcting the measured current using the determined ratio to subtract the current caused by the photoelectrons from the measured current.

[0015] In one embodiment, correcting the measured current further comprises subtracting a fraction of the current measured on the second conductive electrode from the current measured on the first conductive electrode. In one embodiment, the photoionization sensor assembly further comprises a pressure gauge attached to the flange and structured to measure a total pressure and provide the measured total pressure to the controller. In one embodiment, the second end of the chamber is at least partially open to the ambient environment. In one embodiment, the third conductive electrode comprises gold. In one embodiment, the radiation source is at least partially surrounded by a housing. In one embodiment, the radiation source is disposed at the first end of the chamber.

[0016] One embodiment of a method for measuring an analyte gas in the presence of a non-analyte gas comprises: (1) a housing defining a chamber having a first end and an opposing second end, the chamber being permeable to molecules of an analyte gas and a non-analyte gas surrounding the housing; (2) a radiation source configured to emit photons; (3) a first conductive electrode positioned against the first end of the chamber; (4) a second conductive electrode disposed within the chamber; (5) a third conductive electrode positioned against the second end of the chamber; (6) a controller in communication with at least the first conductive electrode and the second conductive electrode; structuring the photoionization sensor to comprise:

[0017] The method further includes emitting photons from the radiation source into the chamber to ionize at least some molecules of the analyte gas, the emitted photons being insufficient to ionize molecules of the non-analyte gas. The photons emitted from the radiation source into the chamber further impinge on a third conductive electrode, causing the emission of photoelectrons.

[0018] The controller is configured to receive measurements of the total pressures of the analyte gas and the non-analyte gas and to electrically bias the first, second, and third conductive electrodes such that photoelectrons are attracted toward and collected on the first and second conductive electrodes in a ratio that depends on the total pressures of the analyte gas and the non-analyte gas. The controller is further configured to measure current generated on the first and second conductive electrodes and to determine a ratio of emitted photoelectrons that are collected on the first and second conductive electrodes at the total pressure. The controller is further configured to determine an amount of current due to ionization of the analyte gas by correcting the measured current using the determined ratio to remove current caused by the photoelectrons.

[0019] In one embodiment, correcting the measured current further comprises subtracting a portion of the current measured on the second conductive electrode from the current measured on the first conductive electrode. In one embodiment, the method further comprises structuring the third conductive electrode to comprise gold. In one embodiment, the method further comprises structuring the second end of the chamber to be at least partially open to the ambient environment. In one embodiment, the method further comprises structuring the third conductive electrode to comprise a grid. In another embodiment, the method further comprises structuring the housing to at least partially enclose the radiation source. In a further embodiment, the method further comprises disposing the radiation source at the first end of the chamber.

[0020] One embodiment of a method for measuring the total pressure of a gas comprises: (1) a housing defining a chamber including a first end and an opposing second end, the chamber being permeable to molecules of a gas surrounding the housing; (2) a radiation source structured to emit photons into the chamber; (3) a first electrode positioned against the first end of the chamber; (4) a second electrode disposed within the chamber; (5) a third electrode positioned against the second end of the chamber; and (6) a controller in communication with at least the first electrode and the second electrode; structuring the photoionization sensor assembly to comprise:

[0021] The method further includes causing the emitted photons to impinge on a third electrode to emit photoelectrons, and configuring a controller to electrically bias the first conductor, the second conductor, and the third conductor such that the emitted photoelectrons are attracted toward and collected on the first electrode and the second electrode at a rate that depends on the total pressure of the gas, the photoelectrons generating currents on the first electrode and the second electrode. The controller is further configured to measure the currents generated on the first electrode and the second electrode and to determine the total pressure of the gas based on the currents generated on the first electrode and the second electrode.

[0022] In one embodiment, the method further includes disposing a radiation source relative to a first end of the chamber. In one embodiment, the method further includes structuring a second end of the chamber to be at least partially open to the ambient environment. In one embodiment, the method further includes structuring a third electrode to comprise gold. In one embodiment, the method further includes structuring a housing to at least partially enclose the radiation source. In another embodiment, the method further includes structuring at least one of the first electrode, the second electrode, and the third electrode to include a grid.

[0023] Additional features and advantages of the present disclosure will be described in, and will be apparent from, the following Brief Description of the Drawings and Detailed Description. [Brief explanation of the drawings]

[0024] A more particular description of the invention briefly summarized above can be understood by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the invention and are therefore not to be considered limiting of the scope of the invention, which may likewise admit of other effective embodiments. Accordingly, for a better understanding of the nature and objects of the invention, reference may be made to the following detailed description read in conjunction with the drawings.

[0025] [Figure 1] 1 illustrates a cross-sectional view of one embodiment of a cluster tool used in semiconductor manufacturing. [Figure 2] 1 illustrates a cross-sectional view of one embodiment of a sensor gauge used to support a semiconductor manufacturing tool. [Figure 3] 1 illustrates a perspective view of one embodiment of a sensor gauge. [Figure 4] 4 shows a cross-sectional view of the sensor gauge embodiment of FIG. 3. [Figure 5] 1 illustrates a perspective view of one embodiment of a sensor gauge. [Figure 6] 1 shows an example of predicting total pressure based on a regression model of photoelectron current in a sensor gauge. [Figure 7] 10 shows a perspective view of another embodiment of a sensor gauge. [Figure 8] 10 shows a cross-sectional view of another embodiment of a sensor gauge. [Figure 9] 9 shows a perspective view of the embodiment of FIG. 8. [Figure 10] 10 is an example of photocurrent-corrected measurements of xylene pulses at various concentrations using the sensor. [Figure 11] The effectiveness of the correction for the photoelectron current is shown. DETAILED DESCRIPTION OF THE INVENTION

[0026] The following description relates to various embodiments of a data connector assembly. It will be understood that the versions described herein are examples embodying the specific inventive concepts detailed herein. As such, other variations and modifications will be readily apparent to those skilled in the art. Additionally, certain terminology is used throughout this description to provide an appropriate frame of reference with respect to the accompanying drawings. Terms such as "upper," "lower," "forward," "rearward," "internal," "external," "front," "rear," "top," "lower," "inner," "outer," "first," and "second" are not intended to limit these concepts unless specifically indicated. As used herein, the terms "about" or "approximately" may refer to a range of 80% to 125% of the claimed or disclosed value. With respect to the drawings, their purpose is to illustrate the salient features of the data connector assembly and, in particular, they are not provided to scale.

[0027] One embodiment of a partial pressure gauge assembly for process contaminant detection using a photoionization sensor gauge or gauge assembly (“sensor”) 100 and related assemblies is configured to detect the presence of hydrocarbons within a process chamber or within a semiconductor production or manufacturing assembly 10, also referred to as a fabrication tool or cluster tool for housing related chambers. In some cases, hydrocarbon contamination occurs as a result of incompatible components used within the manufacturing cluster tool 10, system leaks, or the contamination may be present in the semiconductor wafers (“wafers”) 50 themselves when introduced into the tool 10. Referring to FIG. 1 , the manufacturing tool 10 includes a transfer module or transfer chamber 12 and a buffer module or buffer chamber 13 structured to house wafer-handling robots 14, 15 capable of handling the semiconductor wafers 50. Additional process chambers 20, 22, 24, 26, 28 may be disposed around the transfer module 12 and buffer module 13. In one embodiment, one or more of the additional process chambers 20, 22, 24, 26, 28 may be open to the environment of the transfer / buffer chambers 12, 13, thereby allowing the internal environment of the additional process chambers 20, 22, 24, 26, 28 to move into the environment of the transfer / buffer chambers 12, 13 and / or allowing the environment of the transfer / buffer chambers 12, 13 to move into the internal environment of the additional process chambers 20, 22, 24, 26, 28. After the wafer is removed from the cassette 30, the wafer moves through the process chambers 20, 22, 24, 26, 28, which may be structured to accept the wafer as part of a manufacturing step and which may contain various reagents, materials, or processes used during one or more manufacturing steps. The transfer chamber 12 and some or all of the additional process chambers 20, 22, 24, 26, 28 are maintained at sub-atmospheric pressure via a vacuum system, which may be separate from or integrated with the manufacturing tool 10. A degassing chamber 26 is included in the manufacturing tool 10 and is configured to receive and heat a wafer 50.Heating the wafer 50 activates volatile species present on the wafer 50, such as water and hydrocarbons, so that they are removed from the wafer by evaporation before the manufacturing process proceeds.

[0028] The sensor gauge 100 can be installed in one or more locations within the manufacturing tool 10. As shown in FIG. 1 , the sensor gauge 100 is installed within the degassing chamber 26. A primary advantage of the sensor gauge 100 is that it can detect the presence of an analyte, such as a hydrocarbon, determine a signal associated with that analyte, and use that signal to determine the partial pressure of the analyte. This partial pressure information can then be used to determine the completion or success of the degassing process or to detect abnormally high contamination levels that may indicate upstream problems in the process (e.g., photoresist removal, cleaning process, etc.).

[0029] In the embodiment of the sensor gauge 100 shown in FIGS. 2-5, the sensor gauge 100 has a first end 111 disposed outside the process or manufacturing environment and a second end 113 disposed inside the process environment. The sensor is attached to a flange 112 that secures against the outside of a process chamber (not shown) and a sealing element 115 (e.g., a gasket or O-ring) that forms an airtight seal. A support 114 seats against the opposing outer surface of the flange 112, and a wall 116 is coupled from the support 114 to the opposing surface of the flange 112. As shown, the wall 116 is generally cylindrical and defines a space 117. The support 114 serves to support at least two source electrodes 118, each positioned proximate to a radiation source 130. The source electrodes 118 may include metallization on the surface of the radiation source 130, conductive tape adhered to the radiation source 130, or, as shown here, conductive rings soldered to a circuit board 150 that is attached to the support 114 by a board support 151. As shown, radiation source 130 is a lamp having a first source end 131 disposed outside the process environment and a second source end 133 secured within housing 110. Radiation source 130 encloses a volume filled with a gas, such as Kr gas, although other embodiments may use different gases. Radiation source 130 is constructed from a substantially transparent material that is shatter-resistant and can withstand high heat and pressure fluctuations. In one embodiment, the radiation source may be constructed from or surrounded by glass, such as Pyrex®. A seal 122 may be disposed between flange 112 and radiation source 130 to form an airtight seal. As shown, this seal 122 is an O-ring, and a compressive force is applied by support 114 to maintain the airtight seal.

[0030] The space 117 defined by the walls 116 is lined with a dielectric 160 to form an ionization chamber 162 bounded at a first end by a radiation window 163 that is sealed to the second source end 133 of the radiation source 130. The radiation window 163 is constructed of a UV-transparent crystal that allows high-energy photons to pass from the radiation source 130 into the ionization chamber 162. In some embodiments, the radiation window 163 may be constructed of magnesium fluoride, calcium fluoride, lithium fluoride, or some other suitable material. A plurality of openings 164 traverse the dielectric 160 and the walls 116 to allow gas from the process chamber 189 to penetrate or enter the ionization chamber 162. A first electrode 170 is disposed within the ionization chamber 162 such that the radiation window 163 is located between the second source end 133 of the radiation source 130 and the first electrode 170. 4, the first electrode 170 includes a rim or outer rim 172 with one or more cross-members 174 spanning the width of the outer rim 172 and / or forming a grid-like pattern. A plurality of openings 176 are defined between the cross-members 174 and the outer rim 172 across the first electrode 170.

[0031] 4 , the second electrode 180 is spaced apart from the first electrode 170 and away from the radiation window 163. The second electrode 180 includes a rim or outer rim 182 having one or more cross-members 184 spanning the width of the rim 182 and / or forming a grid-like pattern. The rim 182 and the one or more cross-members 184 define a plurality of openings 186 across the second electrode 180. The third electrode 190 is spaced apart from the second electrode 180 and is disposed between the second housing end 113 and the second electrode 180. Similar to the first electrode 170 and the second electrode 180, the third electrode 190 includes a rim or outer rim 192 having one or more cross-members 194 spanning the width of the rim 192 and / or forming a grid-like pattern. The rim 192 and the one or more cross-members 194 define a plurality of openings 196 across the third electrode 190. Electrical signals and bias voltages are supplied to first electrode 170, second electrode 180, and third electrode 190 through flange 112 by feedthroughs and conductors generally designated 120 (FIG. 2).

[0032] Returning to FIG. 2 , because the manufacturing system 10 operates at a low total pressure, the space between the first electrode 170 and the second electrode 180 is larger than the space between the second electrode 180 and the third electrode 190. At lower pressures, more ions need to be generated to increase sensitivity. In one embodiment, the ratio of the space between the first electrode 170 and the second electrode 180 to the space between the second electrode 180 and the third electrode 190 is 8:1. This means that a larger space between the first electrode 170 and the second electrode 180 is required to allow enough gas particles to enter the ionization chamber 162 for sufficient photoionization to occur. In embodiments used in higher pressure environments, the distance between the first electrode 170 and the second electrode 180 can be reduced so that the ratio is less than 8:1. While some of the embodiments show the second electrode 180 being disposed between the first electrode 170 and the third electrode 190, other embodiments may show the second electrode 180 not being disposed completely between the first electrode 170 and the third electrode 190.

[0033] The first electrode 170, the second electrode 180, and the third electrode 190 are electrically conductive and may be constructed of steel and coated with gold plating. The gold plating does not significantly change the work function when exposed to oxygen, compared to the work function of materials such as stainless steel. The electrodes 170, 180, and 190 are positioned within the ionization chamber 162 so that their one or more cross members 174, 184, and 194 shadow each other. As shown in FIGS. 3-5 , each of the electrodes 170, 180, and 190 has two cross members 174, 184, and 194. The cross members allow the surface area of the electrodes 170, 180, and 190 to be minimized to reduce background noise. In other embodiments, one or more of the electrodes 170, 180, and 190 has more than two cross members.

[0034] The operation of the sensor portion of the sensor gauge 100 will now be described with reference to FIGS. 2-5. The control electronics 80, or controller, is shown schematically in FIG. 5 and is in communication with the sensor gauge 100. The control electronics 80 are typically housed together in a box that couples to the sensor flange 112, but they can also be located remotely from the sensor gauge 100 and connected to the sensor gauge 100 by a cable. Locating the control electronics 80 remotely is advantageous, for example, when the sensor gauge 100 is located in an environment where the temperature is too high for the control electronics 80 to exist. In one embodiment, the control electronics 80 can include a power supply for the radiation source 130, measurement circuitry for the current of interest, a bias voltage source, a data processor, communications means, etc. The sensor gauge 100 uses photoionization to detect the presence of an analyte in the process gas that enters the ionization chamber 162 from the process chamber 189. The radiation source 130, in this case a lamp, is activated using a source electrode 118 to ignite a plasma 140 within the radiation source 130. The plasma 140 emits photons through the radiation window 163 into the ionization chamber 162. The radiation source 130 (and thus the plasma 140) can be adjusted or controlled using a photodiode and / or a camera to measure fluctuations in the light emitted by the plasma 140. Accordingly, the radiation source 130 can be fine-tuned to remove such fluctuations. At least some of the photons are of a wavelength that can ionize molecules of the analyte gas, e.g., molecules of a hydrocarbon gas, in the ionization chamber 162. When the photons collide with the molecules of the analyte gas, they have sufficient energy to produce ions from the molecules of the analyte gas by releasing electrons.

[0035] The first electrode 170, the second electrode 180, and the third electrode 190 are biased to direct one or more flows of charged particles within the ionization volume 162. In one example, the first electrode 170 and the second electrode 180 are held at virtual ground through a current-to-voltage (I-to-V) amplifier, and the third electrode 190 functions as a cathode held at some negative potential relative to ground, typically between −80 V and −300 V. Photons are emitted by the radiation source 130 and travel through the radiation window 163 into the ionization volume 162, where they collide with analyte gas molecules. In one embodiment, the radiation source 130 is positioned against the edge of the ionization volume 162. Each collision has some probability of causing the ejection of electrons from the analyte gas molecules, creating positive ions that travel toward the cathode / third electrode 190, while the ejected electrons travel toward the first electrode 170 or the second electrode 180, depending on the location where ionization occurs, the sensor geometry, the bias voltage, and / or the background gas pressure. Although some of the photons have wavelengths short enough to efficiently ionize most organic molecules, the photons do not have enough energy to ionize background gases, typically nitrogen or argon or hydrogen, that may be present in the ionization chamber 162.

[0036] The electron current collected at the first electrode 170 and the second electrode 180 is conveyed by the feedthrough 120 (see FIG. 2 ) to the control electronics 80, where the current is converted to a voltage, amplified, and digitized. The presence of electron current detected by the controller 80 indicates that the analyte gas may be present in the process chamber 189. In addition to this electron current generated by photoionization of the analyte gas molecules, other sources of electron current can also be measured by the sensor gauge 100. For example, photons with enough energy to ionize hydrocarbons have more than enough energy (photoelectrons) to eject electrons from most conductors. Photoelectrons generated at the surface of the third electrode 190 are accelerated toward and collected by the electric field established by the bias of the third electrode 190 toward the first electrode 170 and the second electrode 180, causing a baseline current on these electrodes; any noise and drift present in this photoelectron current contributes to the measured signal of interest. If these photoelectron currents were constant, they could simply be subtracted from the signal, but they generally are not. Therefore, reducing both the noise and drift of the photoelectron current improves the sensor gauge 100's ability to measure hydrocarbons. One way to reduce the absolute noise and drift is to reduce the photoelectron current overall. This can be done by reducing the area of the third electrode 190 exposed to UV photons. Reducing the exposed area of the third electrode 190, or the third electrode acting as a photoelectron source, can reduce the photoelectron current and the absolute noise associated with this current. The embodiment of the sensor gauge 100 shown in the drawings has a third electrode 190 with a diameter of 0.75 mm and comprising two gold wires extending across the diameter of the third electrode, providing the necessary electric field while minimizing the photoelectron generation area as much as is deemed practical.

[0037] Furthermore, the photoelectron current generated for a given photon flux and energy profile depends on the work function of the illuminated surface. If this work function is not constant, the current generated will not be constant, even if all other variables (photon flux, area, temperature) are fixed. The work function of a conductive surface can be affected by the presence of water or oxygen, or other highly electronegative chemicals, such as those that may be present in certain wafer etch environments. These effects on the signal current are relevant, for example, for monitoring hydrocarbon contaminants in certain semiconductor processes where wafers may be transferred from oxygen-containing to oxygen-free environments. Residual effects on the background photoelectron current can mask small hydrocarbon signals of interest. Figure 11 illustrates this effect in this sensor gauge 100 and one way to overcome it. Here, a rectangular pulse of 10 ppm isobutylene is injected into the nitrogen balance from 29,300 seconds to 30,200 seconds, while holding the total pressure constant. Before and after the pulse, the sensor gauge 100 was exposed to pure nitrogen, but during the pulse, in addition to the isobutylene, the oxygen concentration was increased from zero to 1%. Comparing the signals for the first electrode 170 and the second electrode 180 before and after the pulse, a baseline shift can be identified. This baseline shift is due to a decrease in photoelectron generation that occurs during and continues after the sample pulse due to the sensor 100 being exposed to oxygen. The baseline then recovers, albeit very slowly. This effect is (primarily) due to the work function of the surface of the third electrode 190. To obtain a stable baseline for the hydrocarbon pulse that can be measured, a fraction of the photoelectrons in the signal measured at the second electrode 180 can be subtracted from the signal measured at the first electrode 170. When this fraction is correctly chosen, the effect of the photoelectrons is removed from the data, as shown in "Corrected Signal" in FIG. 11.

[0038] The distribution of these photoelectrons on the first electrode 170 and the second electrode 180 is a fairly complex function of the pressure at which the sensor 100 is operating. Figure 6a shows the photoelectron current measured at the first electrode 170 and the second electrode 180 as a function of pressure in nitrogen with a bias of -80 V on the third electrode 190. The shape of these curves is due to the pressure-dependent scattering of photoelectrons from the background gas. The exact percentage of the second electrode signal to subtract from the first electrode signal to derive a "corrected" signal can be read from such a plot for the desired pressure. Once these two curves are determined for a particular electrode geometry, the pressure within the sensor 100 can be determined from the two electrode signals during a process period when no hydrocarbon signal is expected to be present, such as before turning on the heating in a wafer degassing process. As an example, a regression model of pressure was created for the two electrode signals in the training set of data shown in Figure 6a. A standard machine learning algorithm based on kernel ridge regression was used to develop a model that predicts pressure based on the two currents. This model was then applied to two sensor currents from another test data set, shown in Figure 6b. This data in 6b was not used to train the model. For a random set of current measurements, a "predicted pressure" was determined. This predicted pressure is displayed on the second y-axis. An example, shown by the dotted line, uses two currents measured at approximately 195 Torr to predict a pressure of approximately 198 Torr. Thus, sensor 100 can be used not only to measure hydrocarbon partial pressures, but also to measure the total pressure in a system, even when the dominant species cannot be ionized by UV photons.

[0039] Of course, if one is optimizing for total pressure measurements rather than for measurements of species ionized by UV photons, it is not necessary to try to minimize the photoelectron generation area, as is done in the disclosed sensor 100. It may also be desirable to use a light source where the energy is sufficient to generate photoelectrons from the third electrode or cathode, but where the energy is too low to ionize hydrocarbons or other gas species.

[0040] The calculation of the "correction signal" and "predicted pressure" may be performed by an on-board processor within the control electronics 80, or by a remote computer.

[0041] Another way to reduce these photoelectron effects is to stabilize photoelectron generation against changes in work function. Because the work function of some conductive surfaces is more strongly affected by the presence of oxygen and / or water on them than others, careful selection of the material for the third electrode surface can be helpful. Gold is less susceptible to this effect than stainless steel, so the third electrode 190 of the sensor 100 described herein has a gold surface. This has been achieved in different ways, for example, using gold wire and gold-plated stainless steel components. The first electrode 170 and second electrode 180 can also be gold-plated, but these surfaces are less critical because the typical biasing of the sensor helps prevent photoelectron current from being generated at these surfaces and collected elsewhere.

[0042] Referring to FIG. 7, another embodiment of the sensor gauge 200 is shown. This embodiment is similar to the one described above, except for the addition of an integrated total pressure gauge 260. In this embodiment, the sensor gauge 200 includes a sensor portion 210 and a pressure gauge portion 260. The sensor portion 210 includes a first end 211 and a second end 213. A flange 212 or other surface configured to be attached to a portion of a process chamber or other support is provided. A support 214 is disposed on one side of the flange 212 and is structured to support one or more electrodes (not shown) positioned proximate to the radiation source 230. The one or more electrodes are not shown but may be similar to other previously described electrode embodiments. As with the previously described embodiment, a wall is coupled to the opposite side of the flange 212 relative to the support 214, defining a space. As shown in FIG. 7 and described in other embodiments, the radiation source 230 is a lamp. The radiation source 230 has a first source end 231 disposed on the exterior and a second source end fixed to the interior. One or more feedthroughs 220 can be connected to or in communication with a power source or controller 80. As shown, the radiation source 230 encloses a volume filled with a gas, such as Kr gas, although other embodiments may use different gases. The radiation source 230 is constructed from a substantially transparent material that is shatter-resistant and can withstand high heat and pressure fluctuations. In one embodiment, the radiation source 230 is constructed from glass, such as Pyrex®.

[0043] The tube 250 pneumatically couples the atmosphere to a pressure gauge 260, within which the sensor gauge 200 is located. The pressure gauge 260 is selected to measure the pressure range in which the sensor is intended to operate. Including the pressure gauge 260 with the sensor gauge 200 can conserve flanges on the monitored process system. The pressure within the ionization chamber, measured by the pressure gauge 260, can also be used to perform the photoelectron correction described above. By measuring the pressure and photoelectron current on the second electrode and knowing how the ratio of the photoelectron currents measured on the first and second electrodes depends on pressure, the photoelectron contribution to the current measured on the first electrode can be removed, leaving a corrected analyte signal. Pressure measurements are reported to the control electronics 80, where they can be used, recorded, and / or communicated to the user of the sensor. The walls have a dielectric-lined interior space to define an ionization space similar to the previously described embodiment. Three electrodes (not shown) are positioned in the ionization space. A first electrode (not shown) is positioned proximate to a radiation window (not shown), followed by a second electrode (not shown) and a third electrode (not shown) spaced apart from one another such that the second electrode (not shown) is positioned between the first electrode (not shown) and the third electrode (not shown). The electrodes (not shown) are configured similarly to the previously described first electrode 170, second electrode 180, and third electrode 190. One or more openings (not shown) may be defined in the walls and dielectric to allow gas from the process chamber to enter the ionization chamber (not shown). Analyte detection and pressure determination proceed in a manner similar to that described in the previous embodiment.

[0044] 8 and 9, another embodiment of a sensor gauge 300 is shown and described herein. This embodiment of the sensor gauge 300 positions the radiation source 330 entirely inside the process chamber 389 so that the sensor gauge 300 can be positioned proximate a wafer 50 being processed or any other portion of the manufacturing assembly 10. The sensor gauge 300 has a multi-pin vacuum feedthrough assembly 310 with a first side 311 positioned outside the process or manufacturing environment and a second side 313 positioned inside the process environment. The multi-pin vacuum feedthrough assembly 310 has a flange 312 that secures against the exterior 388 of the process chamber 389 and a sealing element 315 that forms an airtight seal. A support 314 is positioned inside the multi-pin vacuum feedthrough assembly 310. A housing wall 316 extends away from the flange 312 and has a generally cylindrical shape that defines a space. The support 314 functions to support at least two electrodes 320, each positioned proximate to the radiation source 330. As shown, radiation source 330 is again a lamp. It includes a first source end 331 and a second source end 333 secured within housing 316 on the process side of flange 312. Radiation source 330 encloses a volume filled with a gas, such as Kr gas, although other embodiments may use different gases. Radiation source 330 is constructed from a substantially transparent material that is shatter-resistant and can withstand high heat and pressure fluctuations. In one embodiment, the radiation source is constructed from or surrounded by glass, such as Pyrex®. In one embodiment, housing wall 316 at least partially surrounds radiation source 330 and acts as a sleeve enclosing the electrodes that drive radiation source 330. Housing wall 316 is ideally made from Teflon® or other similar fluoropolymer, a reasonable choice for vacuum and process compatibility and high breakdown voltage. This dielectric barrier serves to prevent discharge from the source electrode, which may occur at some sensor operating pressures and transient pressures that may be experienced during use. In other embodiments, the radiation source 330 is generally potted except for the radiation window 363 .

[0045] The space defined by the wall 316 is lined with a dielectric 360 to form an ionization space or ionization chamber 362 bounded at a first end by a radiation window 363 sealed to the second source end 333 of the radiation source 330. A plurality of openings traverse the dielectric 360 and the wall 316 to allow gas from the process chamber to enter the ionization chamber 362. The opposite end of the ionization chamber 362 is also open to the process chamber 389, similar to the previously described embodiments of the sensor gauges 100 and 200. A first electrode 370 is positioned within the ionization chamber 362 such that the radiation window 363 is located between the second source end 333 of the radiation source 330 and the first electrode 370. In the illustrated embodiment, a second electrode 380 is positioned within the ionization space 362 spaced from the first electrode 370 such that the first electrode 370 is generally located between the radiation window 363 and the second electrode 380. The third electrode 390 is positioned against the opposite end of the ionization chamber 362, away from the second electrode 380. The first electrode 370, the second electrode 380, and the third electrode 390 may be positioned and structured similarly to other previously described embodiments. In the embodiment shown in FIG. 9, the third electrode 390 is specifically shown defining a series of circular openings 396 across the third electrode 390, but the third electrode 390 may be configured similarly to previously described embodiments for reasons previously explained. Detection of the analyte gas molecules and determination of pressure proceeds similarly to that described in the previous embodiments. Electrical connection from the sensor to the control electronics 80 is made via pins in the feedthrough assembly 310.

[0046] While the present invention has been particularly shown and described with reference to certain exemplary embodiments, it will be understood by those skilled in the art that various changes in detail can be made therein without departing from the spirit and scope of the invention, which may be supported by the written description and drawings. For example, the disclosed methods and assemblies may be used to determine the number density or other characteristics of an analyte of a sample in a sensor chamber. Furthermore, when exemplary embodiments are described with reference to a certain number of elements, it will be understood that the exemplary embodiments may be implemented utilizing either fewer or more elements.

Claims

1. 1. A sensor assembly for measuring the total pressure of a gas, comprising: a housing defining a chamber having a first end and an opposing second end, the chamber being permeable to molecules of the gas surrounding the housing; a radiation source configured to emit photons into the chamber; a first electrode positioned against the first end of the chamber; a second electrode disposed within the chamber; a third electrode positioned against the second end of the chamber; and a controller in communication with at least the first electrode and the second electrode; Equipped with the photons emitted into the chamber cause the emission of photoelectrons from the third electrode; The controller: electrically biasing the first electrode, the second electrode, and the third electrode such that the emitted photoelectrons are attracted toward and collected on the first electrode and the second electrode at a rate that depends on the total pressure of the gas, and the photoelectrons generate a current on the first electrode and the second electrode; measuring the current generated on the first electrode and the second electrode; determining the total pressure of the gas based on the current generated on the first electrode and the second electrode; It is configured as follows: A sensor assembly, wherein the radiation source is positioned relative to the first end of the chamber.

2. The sensor assembly of claim 1 , wherein the second end of the chamber is at least partially open to the surrounding environment.

3. The sensor assembly of claim 1 , wherein the third electrode comprises gold.

4. The sensor assembly of claim 1 , wherein the radiation source is at least partially surrounded by the housing.

5. 2. The sensor assembly of claim 1, wherein a ratio of the distance between the first electrode and the second electrode to the distance between the second electrode and the third electrode is approximately 8:

1.

6. The sensor assembly of claim 1 , wherein at least one of the first electrode, the second electrode, and the third electrode comprises a grid.

7. 1. A photoionization sensor assembly configured to measure an analyte gas in the presence of a non-analyte gas, comprising: a housing defining a chamber having a first end and an opposing second end, the chamber being permeable to molecules of the analyte gas and the non-analyte gas surrounding the housing; a radiation source configured to emit photons into the chamber; a first conductive electrode positioned against the first end of the chamber; a second conductive electrode disposed within the chamber; a third conductive electrode positioned against the second end of the chamber; and a controller in communication with at least the first conductive electrode and the second conductive electrode; Equipped with the emitted photons ionize at least some molecules of the analyte gas, but the emitted photons are insufficient to ionize molecules of the non-analyte gas; the emitted photons collide with the third conductive electrode to emit photoelectrons; The controller: receiving a measurement of the total pressure of the analyte gas and the non-analyte gas; electrically biasing the first conductive electrode, the second conductive electrode, and the third conductive electrode such that the photoelectrons are attracted toward and collected on the first conductive electrode and the second conductive electrode at a rate that depends on the total pressure of the analyte gas and the non-analyte gas; measuring the current generated on the first conductive electrode and the second conductive electrode; determining a ratio of the emitted photoelectrons that are collected on the first conductive electrode and the second conductive electrode at the total pressure; determining the amount of current due to ionization of the analyte gas by correcting the measured current using the determined ratio and subtracting the current caused by the photoelectrons from the measured current; The photoionization sensor assembly is configured as follows:

8. 8. The photoionization sensor assembly of claim 7, wherein the correcting the measured current further comprises subtracting a portion of the current measured on the second conductive electrode from the current measured on the first conductive electrode.

9. The photoionization sensor assembly of claim 7 , further comprising a pressure gauge attached to the flange and configured to measure a total pressure and provide the measured total pressure to the controller.

10. The photoionization sensor assembly of claim 7 , wherein the second end of the chamber is at least partially open to the ambient environment.

11. The photoionization sensor assembly of claim 7 , wherein the third conductive electrode comprises gold.

12. The photoionization sensor assembly of claim 7 , wherein the radiation source is at least partially surrounded by the housing.

13. The photoionization sensor assembly of claim 7 further comprising disposing the radiation source at the first end of the chamber.

14. 1. A method for measuring an analyte gas in the presence of a non-analyte gas, comprising: a housing defining a chamber having a first end and an opposing second end, the chamber being permeable to molecules of the analyte gas and the non-analyte gas surrounding the housing; a radiation source configured to emit photons; a first conductive electrode positioned against the first end of the chamber; a second conductive electrode disposed within the chamber; a third conductive electrode positioned against the second end of the chamber; and a controller in communication with at least the first conductive electrode and the second conductive electrode; structuring the photoionization sensor to comprise: emitting photons from the radiation source into the chamber to ionize at least some molecules of the analyte gas, the emitted photons being insufficient to ionize molecules of the non-analyte gas; emitting photons from the radiation source into the chamber to strike the third conductive electrode and cause the emission of photoelectrons; Including, The controller receiving a measurement of the total pressure of the analyte gas and the non-analyte gas; electrically biasing the first conductive electrode, the second conductive electrode, and the third conductive electrode such that the photoelectrons are attracted toward and collected on the first conductive electrode and the second conductive electrode at a rate that depends on the total pressure of the analyte gas and the non-analyte gas; measuring the current generated on the first conductive electrode and the second conductive electrode; determining a ratio of the emitted photoelectrons that are collected on the first conductive electrode and the second conductive electrode at the total pressure; determining the amount of current due to ionization of the analyte gas by correcting the measured current using the determined ratio to remove the current caused by the photoelectrons.

15. The method of claim 14 further comprising structuring the third conductive electrode to comprise gold.

16. The method of claim 14 , further comprising structuring the second end of the chamber to be at least partially open to an ambient environment.

17. The method of claim 14 further comprising structuring the third conductive electrode to include a grid.

18. The method of claim 14 , further comprising structuring the housing to at least partially enclose the radiation source.

19. The method of claim 14 further comprising disposing the radiation source at the first end of the chamber.

20. 1. A method for measuring the total pressure of a gas, comprising: a housing defining a chamber having a first end and an opposing second end, the chamber being permeable to molecules of the gas surrounding the housing; a radiation source configured to emit photons into the chamber; a first electrode positioned against the first end of the chamber; a second electrode disposed within the chamber; a third electrode positioned against the second end of the chamber; and a controller in communication with at least the first electrode and the second electrode; structuring the photoionization sensor assembly to comprise: causing the emitted photons to impinge on the third electrode to emit photoelectrons; positioning the radiation source relative to the first end of the chamber; Including, The controller electrically biasing the first electrode, the second electrode, and the third electrode such that the emitted photoelectrons are attracted toward and collected on the first electrode and the second electrode at a rate that depends on the total pressure of the gas, and the photoelectrons generate a current on the first electrode and the second electrode; measuring the current generated on the first electrode and the second electrode; determining the total pressure of the gas based on the current generated on the first electrode and the second electrode.

21. 21. The method of claim 20, further comprising structuring the second end of the chamber to be at least partially open to an ambient environment.

22. 21. The method of claim 20, further comprising structuring the third electrode to comprise gold.

23. 21. The method of claim 20, further comprising structuring the housing to at least partially enclose the radiation source.

24. 21. The method of claim 20, further comprising structuring at least one of the first electrode, the second electrode, and the third electrode to include a grid.

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