Method for manufacturing silicon carbide epitaxial substrate, apparatus for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and program
The method of epitaxial growth using controlled nitrogen concentrations and thicknesses in silicon carbide substrates addresses quality issues, enhancing the performance of silicon carbide semiconductor devices by reducing defects.
JP7740571B1Active Publication Date: 2025-09-17MITSUMI ELECTRIC CO LTD
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Patent Information
- Application Number
- JP2024549221
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2024-08-13
- Publication Date
- 2025-09-17
- Estimated Expiration
- 2044-08-13
AI Technical Summary
Technical Problem
Existing methods for manufacturing silicon carbide epitaxial substrates face challenges in achieving optimal nitrogen concentration and layer thicknesses, which affect the quality and performance of silicon carbide semiconductor devices.
Method used
A method involving epitaxial growth on a silicon carbide substrate using dopant gases, specifically ammonia and nitrogen, to form buffer and drift layers with controlled nitrogen concentrations and thicknesses, along with a manufacturing apparatus and program to manage gas supply and growth processes.
Benefits of technology
The method enhances the quality of silicon carbide epitaxial substrates by ensuring precise nitrogen distribution, reducing defects, and improving the performance of silicon carbide semiconductor devices.
✦ Generated by Eureka AI based on patent content.
Abstract
The method for manufacturing a silicon carbide epitaxial substrate includes the following steps: a buffer layer is formed on a silicon carbide substrate by epitaxial growth using a first dopant gas containing ammonia; a drift layer is formed on the buffer layer by epitaxial growth using a second dopant gas; and the nitrogen concentration in the buffer layer is 3×10 18 cm -3 That's all.
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