Light-emitting display device

Abstract

To provide a light-emitting display device that can improve the light-emitting efficiency of a light-emitting region and prevent a leakage current from flowing to an adjacent sub-pixel.SOLUTION: A light-emitting display device may include a plurality of sub-pixels including a light-emitting region and a non-light-emitting region, an anode including a first transparent electrode and a second transparent electrode arranged in each of the plurality of sub-pixels so as to overlap a portion of the light-emitting region and the non-light-emitting region, a plurality of protruding patterns arranged between the first transparent electrode and the second transparent electrode and on the inside of an edge line of the second transparent electrode, and a bank exposing the light-emitting region and a first region of the non-light-emitting region.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a light emitting display device, and more particularly to a light emitting display device that can improve the light emitting efficiency of a light emitting region and prevent leakage current from flowing to adjacent sub-pixels. [Background technology]

[0002] 2. Description of the Related Art Image display devices that display various information on a screen are a key technology in the information and communication age, and various display devices with excellent performance such as thinness, light weight, and low power consumption have been continuously developed.

[0003] Among these, a light emitting display device includes a light emitting element, which is a self-emitting element, and therefore does not require a separate light source used in a non-light emitting device, and therefore can be made lighter and thinner.

[0004] The light-emitting element includes an intermediate layer between an anode and a cathode, and when an electric field is applied between the anode and the cathode, light emitted from the intermediate layer passes through many components and exits the light-emitting display device.

[0005] However, since a portion of the light emitted from the light emitting element cannot exit the light emitting display device but is trapped inside the display device, a problem may occur in that the light extraction efficiency of the light emitting display device is reduced.

[0006] Furthermore, in a light emitting display device including a light emitting element, a problem may occur in which some of the sub-pixels emit light due to leakage current. Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention is intended to solve the above-mentioned problems, and aims to provide an emissive display device that can improve the luminous efficiency of the luminescent region and prevent leakage current from flowing to adjacent sub-pixels. [Means for solving the problem]

[0008] The light emitting display device of the present invention includes a plurality of protrusion patterns between the first transparent electrode and the second transparent electrode included in each of the sub-pixels, thereby improving the light emitting efficiency of the light emitting portion and preventing leakage current from flowing to adjacent sub-pixels.

[0009] An emissive display device according to one embodiment of the present invention may include a plurality of sub-pixels including a light-emitting portion and a non-emitting portion, an anode including a first transparent electrode and a second transparent electrode provided in each of the plurality of sub-pixels so as to overlap a portion of the light-emitting portion and the non-emitting portion, a plurality of protruding patterns provided between the first transparent electrode and the second transparent electrode and inside an edge line of the second transparent electrode, and a bank exposing a first region of the light-emitting portion and the non-emitting portion. [Effects of the Invention]

[0010] The light-emitting display device of the present invention has the effect of improving the luminous efficiency of the light-emitting region by allowing light that cannot be emitted to the outside from the intermediate layer to be refracted by a plurality of protrusion patterns and emitted to the outside.

[0011] In addition, in the light-emitting display device of the present invention, the intermediate layer can be separated as a first region by the undercut of the second transparent electrode in the non-light-emitting region between adjacent subpixels, thereby preventing leakage current from flowing between adjacent subpixels through the intermediate layer.

[0012] Furthermore, the light emitting display device of the present invention has a plurality of protrusion patterns between the first and second transparent electrodes, thereby simultaneously achieving improved light emitting efficiency and preventing leakage current, thereby reducing power consumption and production energy. Therefore, the light emitting display device of the present invention is environmentally friendly and has ESG (Environment / Social / Governance) benefits due to the advantages of low power consumption and process optimization. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a plan view of a light emitting display device according to a first embodiment of the present invention; [Figure 2] FIG. 2 is a cross-sectional view taken along line II in FIG. [Figure 3] 3 is a cross-sectional view showing the optical path of the light emitting element of FIG. 2. [Figure 4a] 3 is a cross-sectional view of the process of FIG. 2. [Figure 4b] 3 is a cross-sectional view of the process of FIG. 2. [Figure 4c] 3 is a cross-sectional view of the process of FIG. 2. [Figure 4d] 3 is a cross-sectional view of the process of FIG. 2. [Figure 4e] 3 is a cross-sectional view of the process of FIG. 2. [Figure 4f] 3 is a cross-sectional view of the process of FIG. 2. [Figure 4g] 3 is a cross-sectional view of the process of FIG. 2. [Figure 4h] 3 is a cross-sectional view of the process of FIG. 2. [Figure 4i] 3 is a cross-sectional view of the process of FIG. 2. [Figure 4j] 3 is a cross-sectional view of the process of FIG. 2. [Figure 5] FIG. 10 is a plan view of a light emitting display device according to a second embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0014] The advantages and features of the present specification, as well as methods for achieving them, will become more apparent from the following detailed description of the embodiments with reference to the accompanying drawings. However, the present specification is not limited to the various embodiments disclosed below, and may be embodied in various different forms. However, the various embodiments of the present specification are provided to complete the disclosure of the present specification and to fully inform those skilled in the art to which the technical idea of ​​the present specification pertains of the scope of the present specification, and the examples of the present specification are only defined by the scope of the claims.

[0015] The shapes, sizes, scales, angles, numbers, etc. disclosed in the drawings for illustrating various examples of this specification are merely examples and are not limited to those shown in the drawings of this specification. The same components are designated by the same reference numerals throughout this specification. Furthermore, in describing examples of this specification, if it is determined that a detailed description of related known technology may unnecessarily obscure the gist of this specification, such a detailed description will be omitted.

[0016] When using terms such as "comprise," "have," and "consist" as used herein, other parts may be included unless "only" is used. When elements are expressed in the singular, this also includes the plural unless otherwise expressly stated.

[0017] In interpreting elements, unless otherwise expressly stated, they are interpreted as including a margin of error.

[0018] When describing the positional relationship of two parts, for example, using "above", "on top of", "below", or "beside", one or more other parts may be located between the two parts, as long as "immediately" or "directly" is not used.

[0019] When describing temporal relationships, for example, when describing temporal precedence using "after", "following", "next to", or "before", non-consecutive cases can be included as long as "immediately" or "directly" is not used.

[0020] Although terms such as "first" and "second" are used to describe various components, these components are not limited to these terms. These terms are used only to distinguish one component from another. Therefore, a first component referred to below may also be a second component within the technical concept of the present invention.

[0021] The terms "first horizontal axis direction," "second horizontal axis direction," and "vertical axis direction" should not be interpreted as meaning only a geometric relationship in which the relationship between them is perpendicular, but may mean having a broader directionality within the range in which the configuration of this specification can function.

[0022] The term "at least one" should be understood to include all possible combinations of one or more related items. For example, "at least one of the first, second, and third items" can refer not only to the first, second, or third item, but also to all possible combinations of two or more of the first, second, and third items.

[0023] The features of the various examples of the present invention may be partially or fully combined or combined with each other, and various technical interlocking and driving mechanisms may be possible. Each example may be implemented independently of the other, or may be implemented together in a linked relationship.

[0024] Hereinafter, preferred examples of light emitting display devices according to embodiments of the present specification will be described in detail with reference to the accompanying drawings.

[0025] When assigning reference numerals to components in each drawing, the same components may be assigned the same numerals as much as possible even if they are displayed in different drawings. In addition, the scales of the components shown in the accompanying drawings may be different from the actual scales for the convenience of explanation, and are not limited to the scales shown in the drawings.

[0026] FIG. 1 is a plan view of a light emitting display device 1000 according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line II in FIG.

[0027] 1 and 2, an emissive display device 1000 according to one embodiment of the present invention may include a plurality of sub-pixels PXL including a light-emitting region EA and a non-light-emitting region NEA, an anode 110 including a first transparent electrode 111 and a second transparent electrode 113 arranged in each of the sub-pixels PXL so as to overlap a portion of the light-emitting region EA and the non-light-emitting region NEA, a plurality of protruding patterns 150 arranged between the first transparent electrode 111 and the second transparent electrode 113 inside an edge line 113a of the second transparent electrode, a bank 160 exposing a first region A1 of the light-emitting region EA and the non-light-emitting region NEA, and a barrier layer 170 arranged between the second transparent electrode 113 and the bank 160.

[0028] The substrate 10 is divided into an active area where an image is displayed and an outer area where an image is not displayed. The active area may include a plurality of sub-pixels PXL. Each of the sub-pixels PXL may include a light-emitting area EA, which is an area that actually emits light, and a non-light-emitting area NEA, which is an area that does not emit light, surrounding the light-emitting area EA. The sub-pixels PXL may have light-emitting areas EA of different sizes. Each light-emitting area EA may form a unit pixel including red, green, and blue. For example, if each light-emitting area EA is a unit pixel including red, green, and blue, the blue light-emitting area may have a larger area than the red and green light-emitting areas because it has lower light-emitting efficiency than the red and green light-emitting areas. Meanwhile, a non-light-emitting area NEA including a first area A1 may be formed between adjacent sub-pixels PXL. That is, the first area A1 may be formed to overlap a portion of each non-light-emitting area NEA of the adjacent sub-pixel PXL.

[0029] Here, when the substrate 10 is a plastic substrate, it may include polyimide or polyamide. Also, on the substrate 10, various signal lines such as data signal lines and gate signal lines, transistors such as switching thin film transistors and driving thin film transistors, and circuit elements including capacitors are formed for each sub-pixel PXL. Transistors such as the switching thin film transistor and the driving thin film transistor do not overlap with the light-emitting area EA and may be provided in a thin film transistor region TFT, which is a region excluding the first region A1 of the non-light-emitting area NEA. For convenience of explanation, the present invention shows one thin film transistor T1 driving one light-emitting area EA.

[0030] The thin film transistor T1 includes an active layer 27, a gate electrode 35 overlapping a channel region 25 of the active layer 27 with a gate insulating film 31 interposed therebetween, and a source electrode 41 and a drain electrode 43 connected to both sides of the active layer 27.

[0031] The active layer 27 of the thin-film transistor T1 includes a source region 21 and a drain region 23 on either side of a channel region 25. The source region 21 and the drain region 23 are each formed from a semiconductor material doped with n-type or p-type impurities. The channel region 25 overlapping the gate electrode 35 can be formed from a semiconductor material not doped with n-type or p-type impurities.

[0032] The gate electrode 35 of the thin film transistor T1 is configured to overlap the channel region 25 of the active layer 27 with the same width as the channel region 25 of the active layer 27, with a gate insulating film 31 sandwiched therebetween. The gate insulating film 31 overlaps the channel region 25 of the active layer 27 in the same pattern as the gate electrode 35. For example, the gate electrode 35 may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. Meanwhile, the gate insulating film 31 may be formed of an inorganic insulating material, such as silicon dioxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), or multiple layers thereof.

[0033] The light-shielding layer 11 on the substrate 10 overlaps at least the channel region 25 of the active layer 27 of the thin film transistor T1 and is disposed below the active layer 27. The light-shielding layer 11 prevents external light from passing through the substrate 10 and reaching the thin film transistor T1. For example, the light-shielding layer 11 may be a single layer made of a metal material such as molybdenum (Mo), titanium (Ti), aluminum-neodymium (AlNd), aluminum (Al), chromium (Cr), or an alloy thereof, or may have a multi-layer structure using these materials.

[0034] The buffer film 20 on the light-shielding layer 11 is configured to cover the light-shielding layer 11. For example, the buffer film 20 can be a single-layer or multi-layer structure made of silicon oxide (SiOx) or silicon nitride (SiNx).

[0035] The interlayer insulating film 30 on the buffer film 20 may include a source contact hole and a drain contact hole that expose the source region 21 and the drain region 23 of the active layer 27, respectively, and may be configured to cover the gate insulating film 31 and the gate electrode 35. For example, the interlayer insulating film 30 may be made of an inorganic insulating material. For example, the interlayer insulating film 30 may be made of a single layer or multiple layers of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a silicon oxynitride film (SiOxNy).

[0036] The source electrode 41 and the drain electrode 43 may be provided as the same layer on the interlayer insulating film 30. The source electrode 41 and the drain electrode 43 are connected to the source region 21 and the drain region 23 of the active layer 27 through a source contact hole and a drain contact hole, respectively. For example, the source electrode 41 and the drain electrode 43 may be a single layer made of a metal material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), or an alloy thereof, or may have a multi-layer structure using these.

[0037] The passivation layer 40 on the interlayer insulating film 30 can be configured to cover the thin film transistor region TFT, thereby protecting the thin film transistor region TFT by the passivation layer 40. For example, the passivation layer 40 is a kind of inorganic insulating film, and can be configured of a single layer or multiple layers of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a silicon oxynitride film (SiOxNx).

[0038] A planarization layer 50 may be provided on the passivation layer 40. The planarization layer 50 is formed to a thickness sufficient to sufficiently planarize the surface steps on the thin film transistor region TFT and may be formed of an organic insulating film. In some cases, if the planarization layer 50 also serves to protect the thin film transistor T1, the passivation layer 40 may be omitted. For example, the planarization layer 50 is a type of organic insulating film and may be made of any one of photo acrylic, polyimide, benzocyclobutene resin, and acrylate, and may be formed in multiple layers.

[0039] A light-emitting element EL having a stacked structure of an anode 110, an intermediate layer 130, and a cathode 140 may be provided on the planarization layer 50. The anode 110 of the light-emitting element EL is connected to the drain electrode 43 of the underlying thin film transistor T1 through an anode contact hole 55. In this light-emitting element EL, when a current supplied from a power supply voltage line flows to the cathode 140 and a high-voltage current is supplied from the thin film transistor T1 to the anode 110, an electric field is formed between the anode 110 and the cathode 140, causing the intermediate layer 130 to emit light.

[0040] Specifically, the anode 110 may be provided in each of the subpixels PXL, contact the boundary of the first area A1 of the non-emitting area NEA, and overlap with parts of the emitting area EA and the non-emitting area NEA. In the non-emitting area NEA, the anode 110 may be connected to at least one thin film transistor T1 of the thin film transistor area TFT through an anode contact hole 55. For example, the anode 110 may be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or may be made of silver (Ag), aluminum (Al), magnesium (Mg), calcium (Ca), or an alloy thereof, thin enough to transmit light.

[0041] The anode 110 may be formed by overlapping a first transparent electrode 111 and a second transparent electrode 113 on the first transparent electrode 111. A portion of each edge of the first transparent electrode 111 and the second transparent electrode 113 may be formed to contact the boundary line of the first region A1. Specifically, the edge line 111a of the first transparent electrode and the edge line 113a of the second transparent electrode, which are the sides of the first transparent electrode 111 and the second transparent electrode 113 adjacent to the first region A1, may be formed to contact the boundary line of the first region A1. Here, the boundary line of the first region A1 refers to the edge of the area exposed by the bank 160 in the non-emitting region NEA as shown in FIG. 1, and may include the edge of the first region A1 that contacts the edge lines 111a and 113a of the first and second transparent electrodes.

[0042] In addition, the edges of the first transparent electrode 111 and the second transparent electrode 113 may be tapered, like the edge line 111a of the first transparent electrode and the edge line 113a of the second transparent electrode in Fig. 2. Therefore, the tapered edge lines 111a and 113a of the first and second transparent electrodes may form undercuts below the bank 160, thereby helping to prevent discontinuity of layers deposited on the bank 160. However, the edge lines of the first transparent electrode 111 and the second transparent electrode 113 of the present invention are not limited thereto and may be substantially vertical, like the opposite edge lines of the edge line 111a of the first transparent electrode and the edge line 113a of the second transparent electrode in Fig. 2.

[0043] In the light-emitting display device 1000 of the present invention, even if a tapered undercut is not formed in the first transparent electrode 111 and the second transparent electrode 113, a layer deposited on the second transparent electrode 113 can be disconnected by forming an undercut at the bottom of the second transparent electrode 113 by providing a plurality of protruding patterns 150 between the first transparent electrode 111 and the second transparent electrode 113 as follows.

[0044] Here, the second transparent electrode 113 may have a thickness thinner than at least the plurality of protruding patterns 150. The thin second transparent electrode 113 can maintain the protruding shape of the plurality of protruding patterns 150 and cover the surface of each of the plurality of protruding patterns 150. Therefore, the second transparent electrode 113 can be provided along the surface of the plurality of protruding patterns 150 and areas between the plurality of protruding patterns 150 where no protruding patterns 150 are formed.

[0045] The first transparent electrode 111 and the second transparent electrode 113 may be formed to contact each other in an area where the protruding pattern 150 is not formed. The first transparent electrode 111 may be connected to the underlying thin film transistor T1 through the anode contact hole 55. Therefore, in the light emitting display device 1000 of the present invention, the first transparent electrode 111 and the second transparent electrode 113 are connected to each other, so that they can simultaneously receive current from the thin film transistor T1 through the anode contact hole 55. The first transparent electrode 111 and the second transparent electrode 113 may be made of the same material. However, the present invention is not limited thereto, and the first transparent electrode 111 and the second transparent electrode 113 may be made of different transparent conductive materials, depending on the case.

[0046] The plurality of protruding patterns 150 between the first transparent electrode 111 and the second transparent electrode 113 may be formed inward from the edge of the second transparent electrode 113. In particular, among the plurality of protruding patterns 150, a first protruding pattern 150a adjacent to the first region A1 may be formed inward from an edge line 113a of the second transparent electrode 113. As shown in FIG. 1, a plurality of such first protruding patterns 150a may be formed in a direction parallel to the first region A1. Furthermore, depending on the process, the first protruding pattern 150a may have a different size from a second protruding pattern 150b spaced apart from the first region A1 across the first protruding pattern 150a. Therefore, the first protruding pattern 150a formed inside the edge line 113a of the second transparent electrode 113 may cause an undercut at the bottom of the second transparent electrode 113, as shown in region C in FIG. 2. Therefore, the light emitting display device 1000 of the present invention may have an effect of preventing leakage current from flowing between adjacent sub-pixels PXL due to the intermediate layer 130 on the second transparent electrode 113 being disconnected by the undercut of the second transparent electrode 113. In addition, the plurality of protruding patterns 150 may function as light-emitting enhancement dots that help emit light emitted from the light emitting display device to the outside, as will be described later.

[0047] The shape of the plurality of protruding patterns 150 may be a hexahedron with a trapezoidal cross section, with the bottom surface being wider than the top surface. However, the plurality of protruding patterns 150 of the present invention is not limited thereto. For example, the plurality of protruding patterns 150 may have a trapezoidal cross section and a truncated pyramid shape with the area increasing toward the bottom.

[0048] The plurality of protruding patterns 150 may be made of an inorganic insulating material such as SiO2. The plurality of protruding patterns 150 made of an inorganic insulating material may have a lower refractive index than the first transparent electrode 111 and the second transparent electrode 113. Light generated in the intermediate layer 130 that cannot be emitted toward the substrate 10 is reflected by the cathode 140 above and emitted toward the substrate 10, or is directed toward the bank 160 and the protruding patterns 150 in a lateral direction. Referring to FIG. 3, light E1 that enters the bank 160 without passing through the protruding patterns 150 may be lost, but light E2 and E3 that enter the lateral sides of the protruding patterns 150 are refracted upward and downward due to the difference in refractive index between the protruding patterns 150 and the first and second transparent electrodes 111 and 113. Therefore, light E3 that enters the lateral sides of the protruding patterns 150 and is refracted downward toward the first transparent electrode 111 may be emitted to the outside of the substrate 10. In addition, light E2 incident on the side of the protruding pattern 150 and refracted upward toward the second transparent electrode 113 is reflected by the cathode 140 of the reflective electrode and can be emitted again to the outside of the underlying substrate 10. That is, in the light emitting display device 1000 of the present invention, light generated in the intermediate layer 130 is not lost when it travels toward the bank 160, but is refracted by the protruding pattern 150 and emitted toward the substrate 10, thereby improving luminous efficiency.

[0049] The bank 160 may be provided on the second transparent electrode 113 with a barrier layer 170 interposed therebetween. The barrier layer 170 may cover the upper portion of the second transparent electrode 113 provided in the non-emitting area NEA and may be provided between the second transparent electrode 113 and the bank 160. The barrier layer 170 may function as a mask during the process and protect the anode 110 and the plurality of protruding patterns 150 from an etching gas used in forming the first protruding patterns 150a. The barrier layer 170 may be made of a different material from the first transparent electrode 111 and the second transparent electrode 113. For example, the barrier layer 170 may include any one of MoTi (molybdenum titanium), Ti (titanium), Al (aluminum), Cr (chromium), Au (gold), and Pt (platinum).

[0050] The bank 160 may be provided on the planarization layer 50 and the barrier layer 170 to expose the light-emitting area EA and the first area A1 of the non-light-emitting area NEA. That is, the bank 160 may cover the upper edge of the anode 110 to separate the light-emitting area EA of the anode 110, and may cover the thin film transistor area TFT provided in the non-light-emitting area NEA. Here, by exposing the first area A1, the bank 160 may expose at least the edge line 113a of the second transparent electrode that contacts the boundary of the first area A1. Therefore, in the light-emitting display device 1000 of the present invention, a layer deposited on the bank 160 may be disconnected in the undercut area of ​​the second transparent electrode 113, as in area C of FIG. 2.

[0051] In addition, the bank 160 may be formed to have a higher taper angle than the side of the second protrusion pattern 150b provided at least in the light-emitting region EA. The high-angled side of the bank 160 allows the intermediate layer 130, which has poor step coverage characteristics, to be deposited thinly. The side of the bank 160 allows the intermediate layer 130, which is formed as a common mask on the entire surface of the substrate 10, to be formed thinly on the side of the bank 160, so that when the intermediate layer 130 extends from the side of the bank 160 into the first region A1, the intermediate layer 130 can be easily separated.

[0052] The intermediate layer 130 may be provided on the second transparent electrode 113 and the bank 160. The intermediate layer 130 may refer to a single stack of organic layers including a hole injection layer HIL, a hole transport layer HTL, an emitting layer EML, an electron transport layer ETL, and an electron injection layer EIL. Here, the emitting layer EML may be an emitting layer that emits any one of red, green, and blue light, and a portion thereof may be provided in each of the plurality of subpixels PXL. The multiple layers of the intermediate layer 130, excluding the emitting layer EML, may be provided on the entire surface of the substrate 10 as a common mask. The intermediate layer 130 may also refer to a tandem-structured light-emitting unit including a plurality of stacks (first stack, second stack) and a charge generation layer CGL (charge generation layer) between the stacks. Here, the charge generation layer CGL may be a bilayer of n-type and p-type. The tandem structure is not limited to the illustrated two-stack structure, but may be a multi-stack of three or more stacks. The n-type charge generation layer and p-type charge generation layer of the charge generation layer CGL may contain n-type and p-type dopants, respectively. For example, the n-type dopant may contain a metal dopant such as lithium (Li) or ytterbium (Yb). Such metal dopants increase charge mobility, which may cause leakage current between adjacent subpixels when the n-type charge generation layer is formed in common with multiple subpixels. In addition to the n-type charge generation layer, layers of the intermediate layer 130 containing materials with high charge mobility may also cause leakage current.

[0053] The intermediate layer 130 according to the light emitting display device 1000 of the present invention may be disconnected by an undercut region below the second transparent electrode 113, as shown in region C in FIG. 2. Therefore, the present invention can separate a layer having high charge mobility among common layers of the intermediate layer 130 from the first region A1, which is a non-emitting region NEA between adjacent subpixels PXL, thereby preventing leakage current from flowing between adjacent subpixels PXL through the intermediate layer 130. Therefore, the present invention can form a dummy pattern 200 on the planarization layer 50 in the first region A1, which is separated from the intermediate layer 130 on the bank 160 and is disposed in the same layer as the intermediate layer 130.

[0054] The cathode 140 may be provided on the intermediate layer 130. The cathode 140 may be formed as a multilayer structure including a transparent conductive film and an opaque conductive film with high reflectivity. The transparent conductive film of the cathode 140 may be made of a material with a relatively high work function, such as indium tin oxide (ITO) or indium zinc oxide (IZO). The opaque conductive film may be a single layer or multiple layers of any one selected from the group consisting of silver (Ag), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), nickel (Ni), chromium (Cr), and tungsten (W), or an alloy thereof. For example, the cathode 140 may be formed as a structure in which a transparent conductive film, an opaque conductive film, and another transparent conductive film are sequentially stacked, or a structure in which a transparent conductive film and an opaque conductive film are sequentially stacked.

[0055] The cathode 140 can be formed on the entire surface of the substrate 10 using a common mask. The metal cathode 140 can be formed thinner on the side of the bank 160, which has a high taper angle, than on a flat surface. However, due to its excellent step coverage, it can be formed continuously even beyond the side of the bank 160. That is, although the cathode 140 is shown as being disconnected beyond the side of the bank 160 in FIG. 2, it can also be formed beyond the side of the bank 160 and onto the side of the second transparent electrode 113. However, the cathode 140 can be disconnected at least in the undercut region of the second transparent electrode 113, as shown in region C in FIG. 2. Therefore, the cathode 140 is separated on the bank 160 as a first region A1, and the dummy pattern 200 can have a cathode dummy pattern 140a in the same layer as the cathode 140.

[0056] 4a to 4j are cross-sectional views showing the steps of FIG.

[0057] Referring to FIG. 4a, a planarization layer 50 covering the thin film transistor T1 and the light-emitting element EL is formed on a substrate 10. Specifically, a buffer film 20 is formed on the substrate 10 on which a light-shielding layer 11 is formed, and an active layer 27 is formed on the buffer film 20 by a mask process. Next, a gate insulating film 31 and a gate electrode 35 are simultaneously formed on the buffer film 20 on which the active layer 27 is formed by a mask process. Next, an interlayer insulating film 30 having source and drain contact holes is formed on the gate electrode 35 by a mask process. Next, source / drain electrodes 41 and 43 are formed on the substrate 10 on which the interlayer insulating film 30 is formed by a mask process. Next, a passivation layer 40 having an anode contact hole 55 and a planarization layer 50 are sequentially formed on the interlayer insulating film 30 on which the source / drain electrodes 41 and 43 are formed by a mask process.

[0058] A first transparent electrode material 1111 is formed over the entire surface of the planarization layer 50, a plurality of protruding patterns 1150 are formed on the first transparent electrode material 1111 by a mask process, and a second transparent electrode material 1113 is formed on the first transparent electrode material 1111 and the plurality of protruding patterns 1150 so as to overlap the first transparent electrode material 1111. The second transparent electrode material 1113 is formed to be at least thinner than the thickness of the protruding patterns 1150 and can be formed to follow the surface shape of the protruding patterns 1150. In addition, the plurality of protruding patterns 150 can be formed inside the edges of the first transparent electrode material 1111 and the second transparent electrode material 1113.

[0059] Next, referring to FIG. 4 b , a barrier material layer 1170 may be formed on the second transparent electrode material 1113 to overlap the second transparent electrode material 1113 .

[0060] 4c, a photosensitive film PR may be formed in a setting region SET on the barrier material layer 1170 using a mask process. The setting region SET of the photosensitive film PR may be a region including the anode 110 included in each of the plurality of sub-pixels PXL.

[0061] 4d, the barrier material layer 1170 is patterned using the photoresist film PR as a mask to form a barrier material pattern 1170a. Here, the mask process for the barrier material pattern 1170a may be performed using wet etching. In some cases, the barrier material pattern 1170a may be formed to have an undercut taper at the bottom of the photoresist film PR using an etching gas, as in region C1. However, the present invention is not limited thereto, and the side surfaces of the barrier material pattern 1170a may also be formed vertically depending on the process method.

[0062] 4e, the second transparent electrode 113 is formed by patterning the second transparent electrode material 1113 using the photoresist film PR as a mask. The masking process for the second transparent electrode 113 may be performed by wet etching using a gas mixture of HCl (hydrochloric acid) and H3PO4 (phosphoric acid). In some cases, the second transparent electrode 113 may be formed to have an undercut taper below the barrier material pattern 1170a, as in region C2. However, the present invention is not limited thereto, and the side surfaces of the second transparent electrode 113 may be formed vertically depending on the process method.

[0063] Furthermore, if the first transparent electrode material 1111 is made of the same material as the second transparent electrode material 1113, a portion of the first transparent electrode material 1111 that is in contact with the second transparent electrode material 1113 can be removed during the masking process of the second transparent electrode 113. Here, by setting the etching degree to a degree that allows the thickness of the second transparent electrode material 1113 to be etched, the first transparent electrode material 1111 can remain on the planarization layer 50 without being completely etched together with the second transparent electrode material 1113.

[0064] In addition, the edge of the second transparent electrode 113 adjacent to the region between the two photosensitive films PR may be formed from the adjacent region between the photosensitive films PR to the top surface of the protruding pattern 1150. Therefore, the protruding pattern 1150 located between the photosensitive films PR may be partially exposed from the second transparent electrode 113. Meanwhile, the edge of the second transparent electrode 113, excluding the edge adjacent to the region between the two photosensitive films PR, may pass the surface of the protruding pattern 1150 and be continuously in contact with the first transparent electrode material 1111 in the region where the protruding pattern 1150 is not formed.

[0065] 4f, the first transparent electrode material 1111 is patterned using the photoresist film PR as a mask to form the first transparent electrode 111. Here, if the first transparent electrode 111 is formed of the same material as the second transparent electrode 113, the masking process for the first transparent electrode 111 may be performed using the same etching gas as that used in the masking process for the second transparent electrode 113. In some cases, the first transparent electrode 111 may be formed to have an undercut taper at the bottom of the protrusion pattern 1150, as in region C3. However, the present invention is not limited thereto, and the side surface of the first transparent electrode 111 may also be formed vertically depending on the process method.

[0066] 4f, among the plurality of protruding patterns 1150, primary protruding patterns 1150a may appear that protrude outward beyond the edges of the first transparent electrode 111 and the second transparent electrode 113. That is, the first transparent electrode material 1111 and the second transparent electrode material 1113 are patterned up to the upper surface of the primary protruding pattern 1150a located between the two photosensitive films PR, so that the primary protruding pattern 1150a may protrude outward beyond the first transparent electrode 111 and the second transparent electrode 113. Meanwhile, the plurality of protruding patterns 1150b excluding the primary protruding pattern 1150a may have both their lower and upper surfaces in contact with the first transparent electrode 111 and the second transparent electrode 113.

[0067] 4g, the photosensitive film PR is stripped, and the bank 160 is formed using a mask process. The bank 160 may be formed to expose the first region A1 of each of the light-emitting region EA and non-light-emitting region NEA of the plurality of sub-pixels PXL. In addition, the bank 160 may be formed to expose the boundary of the first region A1 and the edge of the barrier material pattern 1170a that overlaps the first region A1.

[0068] 4h, the first protruding patterns 150a may be formed by etching the primary protruding patterns 1150a that protrude outward from the edge of the second transparent electrode 113 using the barrier material pattern 1170a as a mask. The first protruding patterns 150a may be formed inside the edge line of the second transparent electrode 113, such as in region C4, thereby forming an undercut in the second transparent electrode 113. Therefore, the first protruding patterns 150a may be formed to have a different size from the second protruding patterns 150b that are covered by the second transparent electrode 113. The plurality of protruding patterns 150, including the first protruding patterns 150a and the second protruding patterns 150b, may improve the light extraction efficiency of the present invention and form an undercut below the second transparent electrode 113.

[0069] Meanwhile, in the process of Figure 4h, the barrier material pattern 1170a functions as a mask for etching the first protrusion pattern 1150a and can also have the function of preventing damage to the first transparent electrode 111 and the second transparent electrode 113 when etching the first protrusion pattern 1150a.

[0070] 4i, the barrier material pattern 1170a can be patterned using the bank 160 as a mask. Thus, the area of ​​the barrier material pattern 1170a exposed from the bank 160 is removed, and the barrier layer 170 can be formed in the overlapping area of ​​the second transparent electrode 113 and the bank 160.

[0071] 4j, the process of FIG. 4i is completed, and the intermediate layer 130 and the cathode 140 can be sequentially formed over the entire surface of the substrate 10. The intermediate layer 130 and the cathode 140 can be separated from the side of the bank 160 as a first region A1 by forming an undercut in the first protruding pattern 150a below the second transparent electrode 113. Therefore, in the first region A1, a dummy pattern 200 having a stacked structure of an intermediate layer dummy pattern 130a and a cathode dummy pattern 140a that are in the same layer as the intermediate layer 130 and the cathode 140, respectively, can be formed.

[0072] Therefore, the light emitting display device of the present invention has a plurality of protruding patterns 150 formed between the anode 110 of the light emitting element EL included in each of the sub-pixels PXL and the intermediate layer 130, so that light that cannot be emitted to the outside from the intermediate layer 130 can be refracted by the plurality of protruding patterns 150 and emitted to the outside, thereby achieving the effect of improving the luminous efficiency of the light emitting area EA.

[0073] Furthermore, the light emitting display device of the present invention forms a plurality of protruding patterns 150 between the first transparent electrode 111 and the second transparent electrode 113 of the anode 110 included in each of the subpixels PXL, and forms an undercut of the second transparent electrode 113 by a plurality of first protruding patterns 150a among the plurality of protruding patterns 150, which are located below the edge line 113a of the second transparent electrode. As a result, the intermediate layer 130 can be separated into a first region A1 by the undercut of the second transparent electrode 113 in the non-emitting region NEA between the subpixels PXL, thereby having the effect of preventing leakage current from flowing between adjacent subpixels PXL through the intermediate layer 130.

[0074] That is, the light emitting display device of the present invention has a plurality of protruding patterns 150 between first transparent electrode 111 and second transparent electrode 113, thereby achieving the effects of improving light emitting efficiency and preventing leakage current at the same time.

[0075] 5 is a plan view of an organic light emitting display device according to a second embodiment of the present invention. In the second embodiment of the present invention, a first region A1 may be selectively provided along a side surface of an edge of the anode 210. However, the first region A1 does not necessarily have to be provided between the anode 210 and the thin film transistor region TFT. The anode 210 may include a first transparent electrode and a second transparent electrode overlapping each other, and a plurality of protrusion patterns 250 may be provided between the first transparent electrode and the second transparent electrode.

[0076] Among the plurality of protruding patterns 250, a first protruding pattern 250a that generates an undercut under the second transparent electrode may be provided along the edge of the anode 210. That is, the first protruding pattern 250a may be provided along the edge of the anode 210 that contacts the boundary line of the first region A1. Therefore, a second protruding pattern 250b may be provided between the anode 210 and the thin film transistor region TFT.

[0077] The bank 260 may be provided in the non-emitting region NEA, exposing the light-emitting region EA and the first region A1 of the non-emitting region NEA of the anode 210. By exposing the first region A1 of the non-emitting region NEA by the bank 260, the upper edge of the anode 210 may be covered and the side of the anode 210 may be exposed. In addition, the first protruding pattern 250a on the lower part of the second transparent electrode of the anode 210 may be exposed in the first region A1.

[0078] For example, in the case of a unit sub-pixel in which red and green light emitting regions are arranged side by side and a blue light emitting region larger than the red and green light emitting regions is arranged below the red and green light emitting regions, the first region A1 may be provided between the light emitting regions. That is, the light emitting display device according to the second embodiment may be provided between the light emitting regions in which leakage current may occur. Therefore, the light emitting display device according to the second embodiment may selectively include the first region A1 and the first protrusion pattern 150a adjacent to the first region A1, thereby effectively preventing leakage current from flowing between the light emitting regions EA.

[0079] An organic light emitting display device according to an embodiment of the present specification can be described as follows.

[0080] An emissive display device according to one embodiment of the present invention may include a plurality of sub-pixels including a light-emitting region and a non-light-emitting region, an anode including a first transparent electrode and a second transparent electrode arranged in each of the plurality of sub-pixels so as to overlap a portion of the light-emitting region and the non-light-emitting region, a plurality of protruding patterns arranged between the first transparent electrode and the second transparent electrode and inside an edge line of the second transparent electrode, and a bank exposing a first region of the light-emitting region and the non-light-emitting region.

[0081] According to an embodiment of the light emitting display device of the present specification, the plurality of protruding patterns may include a plurality of first protruding patterns provided along an edge line of the second transparent electrode that is in contact with a boundary line of the first region.

[0082] According to an embodiment of the light emitting display device of the present specification, the second transparent electrode may be provided along the surfaces of the plurality of protruding patterns except for a portion of the surfaces of the plurality of first protruding patterns exposed in the first region and along an area where the plurality of protruding patterns are not formed.

[0083] According to an embodiment of the light emitting display device of the present specification, the first transparent electrode and the second transparent electrode may be in contact with each other in a region where the plurality of protruding patterns are not formed.

[0084] In the light emitting display device according to an embodiment of the present specification, the plurality of protruding patterns may be made of an inorganic insulating material.

[0085] In the light emitting display device according to an embodiment of the present specification, the plurality of protruding patterns may have a refractive index lower than that of each of the first transparent electrode and the second transparent electrode.

[0086] According to one embodiment of the present specification, an emissive display device further includes an intermediate layer and a cathode on the second transparent electrode and the bank, and further includes a dummy pattern overlapping the first region, the dummy pattern including at least the same material as the intermediate layer and being separable from the intermediate layer and the cathode.

[0087] In the light emitting display device according to an embodiment of the present disclosure, the bank can expose the dummy pattern in the first region.

[0088] In the light emitting display device according to an embodiment of the present disclosure, the edge line of the first transparent electrode may contact the lower edge of the dummy pattern.

[0089] According to an embodiment of the present disclosure, the light emitting display device may further include a barrier layer between the second transparent electrode and the bank.

[0090] In the light emitting display device according to an embodiment of the present specification, the barrier layer may be made of a different material from each of the first transparent electrode and the second transparent electrode.

[0091] According to an embodiment of the light emitting display device of the present specification, the barrier layer may include any one of MoTi (molybdenum titanium), Ti (titanium), Al (aluminum), Cr (chromium), Au (gold), and Pt (platinum).

[0092] An organic light emitting display device according to an embodiment of the present disclosure may further include a thin film transistor connected to the first transparent electrode, and the thin film transistor may be located in a non-emitting region excluding the first region.

[0093] The present specification described above is not limited to the above-mentioned embodiments and accompanying drawings, and it will be apparent to those skilled in the art to which the present specification pertains that various substitutions, modifications, and alterations are possible within the scope of the technical subject matter of the present specification. Therefore, the scope of the present specification is determined by the claims set forth below, and all modifications and alterations derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present specification. [Explanation of symbols]

[0094] A1 1st area 110 Anode 111 1st transparent electrode 113 Second transparent electrode 130 Middle Class 140 cathode 150 Multiple Projection Patterns 160 banks 170 Barrier Layer 200 dummy patterns

Claims

1. a first sub-pixel and a second sub-pixel, each of the first sub-pixel and the second sub-pixel including an emissive region and a non-emissive region, each of the first sub-pixel and the second sub-pixel including: an anode including a first transparent electrode and a second transparent electrode located above the first transparent electrode, the anode being provided so as to overlap a portion of the non-light-emitting region and the light-emitting region; a plurality of protruding patterns provided between the first transparent electrode and the second transparent electrode and located inside an edge line of the second transparent electrode, each protruding upward; a bank exposing a first region of the non-light-emitting region and the light-emitting region, the bank of the first subpixel is adjacent to the bank of the second subpixel, and a region between the bank of the first subpixel and the bank of the second subpixel has a gap; the second transparent electrode of the first sub-pixel and the second transparent electrode of the second sub-pixel are each disconnected in a region between the bank of the first sub-pixel and the bank of the second sub-pixel; Light-emitting display device.

2. The light emitting display device of claim 1 , wherein the plurality of protruding patterns include a plurality of first protruding patterns provided along an edge line of the second transparent electrode that contacts a boundary line of the first region.

3. 3. The light-emitting display device of claim 2, wherein the second transparent electrode is provided along surfaces of the plurality of first protruding patterns excluding a portion of the surface of the plurality of first protruding patterns exposed in the first region, and along a region where the plurality of protruding patterns are not formed.

4. The light emitting display device of claim 1 , wherein the first transparent electrode and the second transparent electrode are in contact with each other in an area where the plurality of protruding patterns are not formed.

5. The light emitting display device according to claim 1 , wherein the plurality of protruding patterns include an inorganic insulating material.

6. The light emitting display device according to claim 5 , wherein the plurality of protrusion patterns have a refractive index lower than that of each of the first transparent electrode and the second transparent electrode.

7. a cathode and an intermediate layer disposed on the second transparent electrode and the bank, the intermediate layer emitting light in response to an electric field formed between the anode and the cathode; a dummy pattern layer overlapping the first region, The light-emitting display device according to claim 1 , wherein the dummy pattern layer comprises the same material as the intermediate layer and is separated from the intermediate layer and the cathode.

8. The light emitting display device of claim 7 , wherein the bank exposes the dummy pattern layer in the first region.

9. The light emitting display device of claim 7 , wherein an edge line of the first transparent electrode contacts a lower edge of the dummy pattern layer.

10. The light emitting display device of claim 1 , further comprising a barrier layer between the second transparent electrode and the bank.

11. The light-emitting display device of claim 10 , wherein the barrier layer includes a material different from that of the first transparent electrode and the second transparent electrode.

12. The light-emitting display device of claim 10 , wherein the barrier layer includes any one of MoTi (molybdenum titanium), Ti (titanium), Al (aluminum), Cr (chromium), Au (gold), and Pt (platinum).

13. further comprising a thin film transistor connected to the first transparent electrode, The light emitting display device of claim 1 , wherein the thin film transistor is disposed in the non-light emitting region excluding the first region.

14. forming a first sub-pixel and a second sub-pixel, each of the first sub-pixel and the second sub-pixel including an emissive region and a non-emissive region, wherein forming each sub-pixel includes: forming a first transparent electrode; forming a plurality of protruding patterns each protruding upward on the first transparent electrode; forming a second transparent electrode on the first transparent electrode and the plurality of protruding patterns so as to overlap a part of the non-light emitting region and the light emitting region, the plurality of protruding patterns being located inside an edge line of the second transparent electrode; forming a barrier layer on the second transparent electrode; forming a bank on the barrier layer to expose a first region of the non-light-emitting region and the light-emitting region.

15. The forming of the second transparent electrode includes: The method for manufacturing a light-emitting display device according to claim 14, further comprising: patterning the barrier layer; and etching the second transparent electrode material using the patterned barrier layer.

16. forming the plurality of protrusion patterns The method of claim 15, further comprising etching a primary protrusion pattern protruding outward beyond an edge line of the second transparent electrode using the patterned barrier layer as a mask.

17. forming the barrier layer The method for manufacturing a light-emitting display device according to claim 15, further comprising etching the barrier layer using the bank as a mask.

18. A substrate is provided with a first sub-pixel and a second sub-pixel, each of which includes a light-emitting region and a non-light-emitting region, and each of the sub-pixels is an anode including a first transparent electrode and a second transparent electrode having areas overlapping the light-emitting region and the non-light-emitting region; a light-emitting layer provided on the anode; a plurality of luminescence-enhancing dots provided between the first transparent electrode and the second transparent electrode in the luminescent region and the non-luminescent region; The light-emitting display device, wherein the plurality of light-emitting enhancement dots have a refractive index lower than that of the first transparent electrode and the second transparent electrode, and refract light emitted from the light-emitting layer toward the light-emitting region of the substrate.

19. The light emitting display device of claim 18 , further comprising a bank exposing the first region of the non-light emitting region and the light emitting region.

20. The light emitting display device of claim 19 , further comprising a dummy pattern layer exposed by the first region of the non-light emitting region.

21. The light-emitting display device of claim 19 , wherein the second transparent electrode has an undercut region for disconnecting the second transparent electrode in the first region of the non-light-emitting region.

22. 20. The light emitting display device of claim 19, wherein the light emitting layer is separated by the first region of the non-light emitting region.

23. The light emitting display device of claim 19 , wherein the first region of the non-light emitting region is selectively provided along a side of an edge of the anode.

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