magnetic sensor device

Abstract

To provide a magnetic sensor device with a high degree of freedom in designing a wiring layer and stable output characteristics.SOLUTION: A magnetic sensor device 1 comprises: a plurality of magnetic detection element arrays 30 formed in a first layer L1; and a wiring layer 4 that is formed in a second layer L2 different from the first layer L1 and electrically connected to the plurality of magnetic detection element arrays 30. The plurality of magnetic detection element arrays 30 include a first magnetic detection element array 31 and a second magnetic detection element array 32, the first magnetic detection element array 31 and the second magnetic detection element array 32 are each configured of the same number of magnetic detection elements E, and in a plane-normal direction Z from the second layer L2 to the first layer L1, the number of magnetic detection elements E' of the first magnetic detection element array 31 overlapping an outline O4 of the wiring layer 4 is substantially the same as the number of magnetic detection elements E' of the second magnetic detection element array 32 overlapping the outline O4 of the wiring layer 4.SELECTED DRAWING: Figure 13

Description

[Technical Field]

[0001] The present disclosure relates to a magnetic sensor device. [Background technology]

[0002] A magnetic sensor device includes a magnetic detection element made of a magnetic material. When an external force is applied to the magnetic material, its response to the magnetic field fluctuates due to the inverse magnetostriction effect. In particular, tunnel magnetoresistance elements have excellent output characteristics with a large MR ratio, but their output characteristics are easily affected by external forces.

[0003] Some magnetic sensor devices use a non-flexible wiring layer instead of a flexible bonding wire to electrically connect the magnetic detection element to the outside. In such magnetic sensor devices, thermal stress in the wiring layer, which expands and contracts with temperature changes, may act on the magnetic detection element. Patent Document 1 discloses a semiconductor device in which the wiring portion is positioned so as not to overlap the sensor element in the thickness direction of the semiconductor chip, in order to solve the problem of stress occurring due to thermal deformation of the wiring layer when the semiconductor device is heated, and the stress in the wiring layer reaching the sensor element. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-277034 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the semiconductor device of Patent Document 1, the wiring must be routed to a position where it does not overlap with the sensor element in the thickness direction of the semiconductor chip, which significantly limits the layout of the wiring.

[0006] The present disclosure has been made in view of the above circumstances, and aims to provide a magnetic sensor device that has a high degree of freedom in the design of wiring layers and stable output characteristics. [Means for solving the problem]

[0007] A magnetic sensor device according to one aspect of the present disclosure includes a plurality of magnetic detection element arrays formed on a first layer, and a wiring layer formed on a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays. The plurality of magnetic detection element arrays include a first magnetic detection element array and a second magnetic detection element array, each of which is configured with the same number of magnetic detection elements, and in a direction perpendicular to the surface from the second layer to the first layer, the number of magnetic detection elements of the first magnetic detection element array overlapping the outline of the wiring layer is approximately the same as the number of magnetic detection elements of the second magnetic detection element array overlapping the outline of the wiring layer.

[0008] A magnetic sensor device according to another aspect of the present disclosure includes a plurality of magnetic detection element arrays formed on a first layer, a wiring layer formed on a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays, and a dummy pattern formed on the second layer and not electrically connected to the plurality of magnetic detection element arrays. The plurality of magnetic detection element arrays include a first magnetic detection element array and a second magnetic detection element array, each of which is configured with the same number of magnetic detection elements, and in a direction perpendicular to the surface from the second layer to the first layer, the number of magnetic detection elements of the first magnetic detection element array that overlap the outline of the wiring layer is approximately the same as the number of magnetic detection elements of the second magnetic detection element array that overlap the outline of the dummy pattern.

[0009] Positions that overlap the outline of the wiring layer or dummy pattern in the perpendicular direction are susceptible to thermal stress from the wiring layer or dummy pattern. According to these aspects, the number of magnetic detection elements overlapping the outline of the wiring layer or dummy pattern is approximately the same in the first magnetic detection element array and the second magnetic detection element array, so the effects of thermal stress on the first magnetic detection element array and the second magnetic detection element array are balanced. Since the resistance ratio and other characteristics are less likely to change between the first magnetic detection element array and the second magnetic detection element array, a magnetic sensor with stable output characteristics can be provided. Because the wiring layer can be arranged to overlap the first magnetic detection element array and / or the second magnetic detection element array, the degree of freedom in designing the wiring layer can be increased compared to when all of the magnetic detection element arrays must be bypassed.

[0010] In the above aspect, the first magnetic detection element array and the second magnetic detection element array may be connected in series across the output port so as to form part of a bridge circuit.

[0011] As will be described later, if the resistance ratio between the first and second magnetic detection element arrays that form the parallel circuit of the bridge circuit changes, the output characteristics of the magnetic sensor device will become unstable. According to this aspect, the influence of thermal stress on the first magnetic detection element array and the influence of thermal stress on the second magnetic detection element array are balanced, making it difficult for the balance condition of the bridge circuit to change, thereby stabilizing the output characteristics of the magnetic sensor device.

[0012] In the above aspect, the area of ​​the first magnetic detection element array overlapping the wiring layer and the area of ​​the second magnetic detection element array overlapping the wiring layer may have equal or unequal areas in the direction perpendicular to the surface.

[0013] In the above aspect, the area of ​​the first magnetic detection element array overlapping the wiring layer and the area of ​​the second magnetic detection element array overlapping the dummy pattern may have equal or unequal areas in the direction perpendicular to the surface.

[0014] The influence of thermal stress on the first and second magnetic detection element arrays depends not on the area or shape of the area overlapping the wiring layer or dummy pattern, but on the number of magnetic detection elements overlapping the outline of the wiring layer or dummy pattern. According to these aspects, the wiring layers can be arranged symmetrically for the first and second magnetic detection element arrays so that the areas where the first and second magnetic detection element arrays overlap the wiring layer or dummy pattern are equal in volume. The wiring layers can also be arranged asymmetrically for the first and second magnetic detection element arrays so that the areas where the first and second magnetic detection element arrays overlap the wiring layer or dummy pattern are unequal in volume. This further increases the degree of freedom in the design of the wiring layers.

[0015] In the above aspects, the angle sensor may be equipped with a magnetic sensor device, the magnetic compass may be equipped with a magnetic sensor device, the current sensor may be equipped with a magnetic sensor device, or the autofocus mechanism and / or the optical image stabilization mechanism of the camera module may be equipped with a magnetic sensor device.

[0016] According to these aspects, the magnetic sensor device can be used for various purposes. [Effects of the Invention]

[0017] According to the present disclosure, it is possible to provide a magnetic sensor device with a high degree of freedom in the design of wiring layers and stable output characteristics. [Brief explanation of the drawings]

[0018] [Figure 1] FIG. 1 is a perspective view showing a magnetic sensor device according to an embodiment. [Figure 2] FIG. 2 is a cross-sectional view schematically illustrating an example of the internal structure of the magnetic sensor device shown in FIG. [Figure 3] FIG. 3 is a perspective view illustrating a manufacturing process of the magnetic sensor device shown in FIG. [Figure 4] FIG. 4 is a diagram illustrating an example of a magnetic sensor device configured as an angle sensor. [Figure 5] FIG. 5 is a plan view showing an example of a magnetic sensor device configured as a magnetic compass. [Figure 6] FIG. 6 is a diagram showing an example of a magnetic sensor device used as a part of a current sensor. [Figure 7] FIG. 7 is a diagram showing a circuit configuration of the current sensor shown in FIG. [Figure 8] FIG. 8 is a perspective view showing an example of a magnetic sensor device used as a part of an autofocus mechanism and an optical image stabilization mechanism of a camera module. [Figure 9] FIG. 9 is a cross-sectional view showing the internal structure of the camera module shown in FIG. [Figure 10] FIG. 10 is a plan view of the simulation model as viewed perpendicular to the surface. [Figure 11] FIG. 11 is a cross-sectional view of the simulation model as viewed along the XY plane perpendicular to the surface normal direction. [Figure 12] FIG. 12 is a diagram showing simulated angular errors at the positions shown in FIGS. [Figure 13] FIG. 13 is a plan view showing a first example configured so that the influence of thermal stress is balanced among the magnetic detection element arrays. [Figure 14] FIG. 14 is a plan view showing a second example configured so that the influence of thermal stress is balanced among the magnetic detection element arrays. [Figure 15] FIG. 15 is a plan view showing a third example configured so that the influence of thermal stress is balanced among the magnetic detection element arrays. [Figure 16] FIG. 16 is a plan view showing a fourth example configured so that the influence of thermal stress is balanced among the magnetic detection element arrays. [Figure 17] FIG. 17 is a plan view showing a fifth example configured so that the influence of thermal stress is balanced among the magnetic detection element arrays. [Figure 18]FIG. 18 is a plan view showing an example in which the effects of thermal stress are not balanced among the magnetic detection element arrays, shown for comparison with FIGS. DETAILED DESCRIPTION OF THE INVENTION

[0019] A preferred embodiment will be described with reference to the accompanying drawings. In each drawing, components with the same reference numerals have the same or similar configurations. FIG. 1 is a perspective view showing a magnetic sensor device 1 according to one embodiment. In the illustrated example, the magnetic sensor device 1 includes a support substrate 2, a sensor chip 3, a wiring layer 4, a sealing resin 5, electrodes 6, etc. One magnetic sensor device 1 may include multiple sensor chips 3.

[0020] 1, the support substrate 2 is formed in a flat plate shape having a first surface 2A and a second surface 2B opposite to the first surface 2A. In the following description, the thickness direction of the support substrate 2 is referred to as the plane-perpendicular direction Z or the up-down direction Z, the direction from the second surface 2B to the first surface 2A is referred to as the upward direction, and the direction from the first surface 2A to the second surface 2B is referred to as the downward direction. The first surface 2A extends parallel to the XY plane that is perpendicular to the plane-perpendicular direction Z.

[0021] 2 is a cross-sectional view schematically illustrating an example of the internal structure of the magnetic sensor device 1 shown in FIG. 1. In the illustrated example, the support substrate 2 is an ASIC (Application Specific Integrated Circuit), and an electrode 2E electrically connected to the wiring layer 4 is provided on the first surface 2A. The support substrate 2 is not limited to an ASIC, and may be a silicon substrate or a sapphire substrate. Alternatively, the support substrate 2 may be an interposer on which only wiring, not including an integrated circuit, is formed.

[0022] The sensor chip 3 is fixed with an adhesive or the like to the first surface 2A of the support substrate 2. As shown in Fig. 2, the sensor chip 3 includes a sensor substrate 10, a plurality of magnetic detection element arrays 30 provided on the sensor substrate 10, a protective film 20 surrounding each of the magnetic detection element arrays 30, and the like.

[0023] The sensor substrate 10 is, for example, a silicon substrate, and is disposed between the first surface 2A of the support substrate 2 and the protective film 20. The configuration of the magnetic sensor device 1 is not limited to the example shown in the figure, and the sensor substrate 10 may be omitted, and a monolithic structure may be adopted in which the support substrate 2 and the magnetic detection element array 30 are formed as an integrated structure by photolithography. The protective film 20 may be an inorganic film containing silica (silicon dioxide SiO2) as its main component, or a laminated film of an inorganic film containing silica as its main component and an inorganic film containing alumina (aluminum oxide Al2O3) as its main component.

[0024] Each magnetic detection element array 30 is composed of a plurality of magnetic detection elements E (shown in FIG. 13 ) connected in a daisy chain and arranged in a matrix. One example of the magnetic detection element E is a TMR (tunnel magnetoresistance effect) element. The magnetic detection element E is not limited to a TMR element, but may be a GMR (giant magnetoresistance effect) element, an AMR (anisotropic magnetoresistance effect) element, a Hall element, or another type of magnetic detection element. The TMR element is particularly suitable as the magnetic detection element E because, compared to other types of MR elements, its smaller junction area allows for the miniaturization of the sensor chip 3, and its larger MR ratio allows for the increase in output of the sensor chip 3.

[0025] The magnetic detection element array 30 is disposed on the first surface 2A side of the support substrate 2 and is formed on a first layer L1 on the first surface 2A side of the support substrate 2. The wiring layer 4 is disposed on the first surface 2A side of the support substrate 2 and is formed on a second layer L2 different from the first layer L1. Dummy patterns 4D (shown in FIG. 14), which will be described later, are also formed on the second layer L2, similar to the wiring layer 4.

[0026] The second layer L2 is not particularly limited as long as it is a layer different from the first layer L1, and may be multiple layers. For example, the second layer L2 may be the upper surface of a first resin layer 51 (shown in FIG. 3) described below, or the upper surface of a second resin layer 52 (shown in FIG. 3). Both second layers L2 are located farther from the support substrate 2 than the first layer L1. The direction from the first layer L1 toward the second layer L2 coincides with the above-mentioned perpendicular direction Z.

[0027] The wiring layer 4 extends parallel to the first surface 2A of the support substrate 2, and electrically connects the electrodes 2E of the support substrate 2 to the electrodes 3E provided on the upper surface 3A of the sensor chip 3 through a plurality of vias 40 extending in the direction perpendicular to the surface Z. The wiring layer 4 is arranged so as to partially overlap the sensor substrate 10 in the direction perpendicular to the surface Z.

[0028] The sealing resin 5 is disposed on the first surface 2A side of the support substrate 2 and covers the sensor chip 3 and the wiring layer 4. The sealing resin 5 is configured by laminating multiple resin layers 51, 52, and 53 (shown in FIG. 3) that extend in parallel along the first surface 2A of the support substrate 2. The wiring layer 4 and the dummy pattern 4D (shown in FIG. 14) are, for example, copper plating provided on the upper surfaces of the resin layers 51 and 52. The electrodes 6 are, for example, solder balls or copper pillars, and are electrically connected to the wiring layer 4 and exposed from the sealing resin 5.

[0029] 3A and 3B are perspective views illustrating a manufacturing process of the magnetic sensor device 1 shown in Fig. 1. As shown in Fig. 3A, the sensor chip 3 is fixed to the first surface 2A of the support substrate 2 with an adhesive or the like. As shown in Fig. 3B, a resin layer (first resin layer) 51 is formed so as to cover the sensor chip 3 and the first surface 2A of the support substrate 2, and through holes 40P for vias 40 (shown in Fig. 2) are opened at the positions of the electrodes 2E and 3E (shown in Fig. 10).

[0030] As shown in Fig. 3(C), a seed layer is formed by sputtering or the like, and the via 40 and the first wiring layer 41 are formed by plating. These processes may be a subtractive method or an additive method. As shown in Fig. 3(D), a resin layer (second resin layer) 52 is formed so as to cover the via 40, the first wiring layer 41, and the resin layer 51, and a through hole 40P for the via 40 is opened.

[0031] As shown in Fig. 3(E), vias 40 and a second wiring layer 42 are formed by a process similar to that shown in Fig. 3(C). As shown in Fig. 3(F), a resin layer (third resin layer) 53 is formed so as to cover the vias 40, the second wiring layer 42, and the resin layer 52, and through holes 6P for the electrodes 6 are opened. As shown in Fig. 3(G), the through holes 6P are filled with solder or the like to form the electrodes 6. By following the procedures shown in Figs. 3(A) to 3(G), the support substrate 2 and the sensor chip 3, which are prepared separately, are electrically connected to obtain the magnetic sensor device 1 shown in Fig. 1.

[0032] 4 is a diagram showing an example of a magnetic sensor device 1 configured as an angle sensor that generates a detection value corresponding to the angle of a detection target. In the example shown, the magnetic sensor device 1 is configured as an angle sensor that detects the angle of a magnet 300 that can rotate around a central axis O of a cylinder as the rotation axis. In the example shown, the X direction, Y direction, and Z direction are perpendicular to one another, and the central axis O is parallel to the Z direction.

[0033] The magnetic sensor device 1 detects a first component of the magnetic field MF generated by the magnet 300 in a direction parallel to the X direction and applied to the magnetic sensor device 1, and generates a first detection signal representing the intensity of the first component, and detects a second component of the magnetic field generated by the magnet 300 in a direction parallel to the Y direction and generates a second detection signal representing the intensity of the second component. A processor (not shown) calculates the arc tangent of the ratio between the first detection signal and the second detection signal to calculate the angle θ that the magnetic field generated by the magnet 300 makes with respect to the reference direction DR.

[0034] Fig. 5 is a diagram showing an example of a magnetic sensor device 1 configured as a magnetic compass that generates detection values ​​corresponding to the angle of the geomagnetic field. As shown in Fig. 5, the magnetic sensor device 1 includes three sensor chips 3 (first to third sensor chips 3X, 3Y, and 3Z), and the first to third sensor chips 3X, 3Y, and 3Z are configured to detect components of an external magnetic field in three directions that are orthogonal to each other, respectively.

[0035] 6 is a diagram showing an example of a magnetic sensor device 1 used as part of a current sensor 400 that generates a detection value corresponding to the value of a current to be detected. In the example shown, the current sensor 400 is configured to detect the value of a current Itg flowing through a bus bar 410. A magnetic field MF is generated around the bus bar 410 by the current Itg. The current sensor 400 is disposed in the vicinity of the bus bar 410 at a position where the magnetic field MF is applied.

[0036] FIG. 7 is a diagram showing the circuit configuration of the current sensor 400 shown in FIG. 6. In the illustrated example, the current sensor 400 is configured as a magnetic balance current sensor. The current sensor 400 includes a coil 420 in addition to the magnetic sensor device 1. The coil 420 is for generating a second magnetic field MF2 that cancels out the first magnetic field MF1 of the magnetic field MF. The magnetic sensor device 1 detects the residual magnetic field between the first magnetic field MF1 and the second magnetic field MF2, and generates a magnetic field detection value S corresponding to the strength of the magnetic field.

[0037] The current sensor 400 further includes a feedback circuit 430, a current detector 440, and the like. The feedback circuit 430 passes a feedback current through the coil 420 to generate a second magnetic field MF2 based on the magnetic field detection value S. The current detector 440 detects the value of the feedback current flowing through the coil 420. The current detector 440 is, for example, a resistor inserted in the current path of the feedback current. In this case, the potential difference across the resistor corresponds to the detected value of the feedback current. Because the detected value of the feedback current is proportional to the value of the current Itg in the bus bar 410, the value of the current Itg can be detected from the detected value of the feedback current.

[0038] The magnetic sensor device 1 of the present disclosure may be mounted in an electronic device such as an information device and used as a magnetic compass to detect the earth's magnetic field, or may be used as part of an autofocus mechanism or optical image stabilization mechanism of a camera module, or may be used as an angle sensor to detect the angle that the magnetic field generated from a magnet makes with respect to a reference direction, or may be used as part of a current sensor to detect the value of the current flowing through a bus bar.

[0039] Fig. 8 is a perspective view showing an example of a magnetic sensor device 1 used as part of the autofocus mechanism and optical image stabilization mechanism of a camera module 200. Fig. 9 is a cross-sectional view showing the internal structure of the camera module 200 shown in Fig. 8. The autofocus mechanism and optical image stabilization mechanism of the camera module 200 includes a driving device 230 that moves the lens 220, and controls the driving device 230 based on position information of the lens 220 detected by a plurality of magnetic sensor devices 1.

[0040] More specifically, the autofocus mechanism uses an image sensor or autofocus sensor to detect when a subject is in focus, and moves the lens in the Z direction relative to the image sensor. The optical image stabilization mechanism detects camera shake using a gyro sensor or the like, and moves the lens in the U and / or V directions relative to the image sensor.

[0041] The camera module 200 shown in Figure 8 includes an image sensor 210 such as a CMOS, a lens 220 that is aligned with the image sensor 210, a first holding member 241 that is movable in the U and V directions relative to the image sensor 210, a second holding member 242 that is movable in the Z direction relative to the first holding member 241, a plurality of elastically deformable wires 244 that support the first holding member 241 and the second holding member 242, a drive device 230 that moves the first holding member 241 and the second holding member 242, and a housing 250 that houses them.

[0042] The autofocus mechanism and optical image stabilization mechanism of camera module 200 includes a drive device 230, a plurality of magnetic sensor devices 1, a processor that controls drive device 230, an autofocus sensor that detects when the subject is in focus, a gyro sensor that detects camera shake, etc. The processor, autofocus sensor, gyro sensor, etc. (not shown) are arranged outside the housing.

[0043] The lens 220 is fixed inside a cylindrical second holding member 242. The second holding member 242 is housed together with the lens 220 in a box-shaped first holding member 241. At least one second magnet 243 is fixed to the second holding member 242 so that at least one magnetic sensor device 1 detects position information of the second holding member 242.

[0044] The driving device 230 includes a plurality of first coils 231, a plurality of second coils 232, a plurality of first magnets 233, etc. The plurality of first coils 231 are fixed to the housing 250. The plurality of second coils 232 are fixed to the second holding member 242. The plurality of first magnets 233 are fixed to the first holding member 241. Each of the plurality of first coils 231 faces a corresponding first magnet 233. Each of the plurality of second coils 232 faces a corresponding first magnet 233.

[0045] In the case of the autofocus mechanism, when a current flows through any second coil 232 in response to a command from the processor, the second holding member 242 fixed to the second coil 232 moves in the Z direction due to the interaction between the magnetic field generated from the first magnet 233 and the magnetic field generated from the second coil 232. At least one magnetic sensor device 1 generates a detection signal based on a composite magnetic field formed by combining the magnetic field generated from at least one second magnet 243 fixed to the second holding member 242 and the magnetic field generated from the first magnet 233 fixed to the first holding member 241, and transmits the detection signal to the processor. The processor detects position information of the lens 220 in the Z direction from the detection signal, and controls the drive device 230 so that the subject is in focus.

[0046] In the case of an optical image stabilization mechanism, when a current flows through any of the first coils 231 in response to a command from the processor, the magnetic field generated from the first magnet 233 interacts with the magnetic field generated from the first coil 231, causing the first holding member 241 fixed to the first magnet 233 to move in the U direction and / or V direction. Each of the multiple magnetic sensor devices 1 generates a detection signal based on the position of the corresponding first magnet 233 and transmits it to the processor. The processor detects position information of the lens 220 in the U direction and V direction from the detection signal, and controls the drive device 230 to correct camera shake.

[0047] Next, the magnetic sensor device 1 of the present disclosure will be described in detail with reference to Fig. 10 to Fig. 18. Fig. 10 is a plan view of the simulation model as seen from the direction perpendicular to the surface Z, and shows positions P=0 to 14 plotted on the upper surface 3A of the sensor chip 3. As shown in Fig. 10, P=0 is set to the position directly below the center of the wiring layer 4, which is 100 µm square in each of the X-axis and Y-axis directions, and P=1, 2, 3, ..., 14 are plotted by moving the position by 10 µm in each of the X-axis and Y-axis directions. For example, P=14 is located 140 µm away from P=0 in each of the X-axis and Y-axis directions.

[0048] Fig. 11 is a cross-sectional view of the simulation model taken along an XY plane perpendicular to the plane-normal direction Z. Fig. 12 is a diagram showing the angle error simulated at each distance Q shown in Fig. 11 from the position P shown in Fig. 10, in which the horizontal axis shows 15 patterns of position P from 0 to 14, and the vertical axis shows 8 patterns of distance Q from the upper surface 3A of the sensor chip 3 to the wiring layer 4 shown in Fig. 11, 1 μm, 2 μm, 3 μm, 5 μm, 8 μm, 10 μm, 15 μm, and 20 μm, and the simulation results are plotted when a predetermined stress value is applied to the magnetic sensor device 1.

[0049] 12, the angle error tends to be greatest as the distance Q from the top surface 3A of the sensor chip 3 to the wiring layer 4 decreases. Regardless of the distance Q, the angle error is greatest at position P=5 where the magnetic detection element array 30 overlaps with the outline O4 of the wiring layer 4 in the direction perpendicular to the surface Z, and at position P=6 nearby. If the magnetic detection element array 30 is located at these positions, it is susceptible to the effects of thermal stress from the wiring layer 4.

[0050] 13 to 17 are plan views showing examples configured so that the influence of thermal stress from the wiring layer 4 is balanced between the first magnetic detection element array 31 and the second magnetic detection element array 32. The magnetic sensor device 1 of the present disclosure includes a plurality of magnetic detection element arrays 30 formed on the first layer L1 (shown in FIG. 2). In the examples shown, the plurality of magnetic detection element arrays 30 include first to fourth magnetic detection element arrays 31, 32, 33, and 34.

[0051] 13 to 17, a bridge circuit is formed by two parallel circuits. The first magnetic detection element array 31 and the second magnetic detection element array 32 are connected in series across output port A to form one parallel circuit of the bridge circuit, and the third magnetic detection element array 33 and the fourth magnetic detection element array 34 are connected in series across output port B to form the other parallel circuit of the bridge circuit. Output ports A and B are connected to electrode 2E.

[0052] As shown in Figures 13 to 17, one of the features of the magnetic sensor device 1 of the present disclosure is that, in a planar view along the direction perpendicular to the surface Z, the number of magnetic detection elements E' overlapping the contours O4, OD of the wiring layer 4 or dummy pattern 4D is approximately the same in the first magnetic detection element array 31 and the second magnetic detection element array 32, so that the effects of thermal stress on the first magnetic detection element array 31 and the second magnetic detection element array 32 are balanced.

[0053] 13 to 15, for example, the contour O4 of the wiring layer 4 overlaps with each of the first magnetic detection element array 31 and the second magnetic detection element array 32 in the direction perpendicular to the surface Z. The number of magnetic detection elements E' overlapping with the contour O4 of the wiring layer 4 is six for both the first magnetic detection element array 31 and the second magnetic detection element array 32, which is the same number.

[0054] 16 to 18, for example, in the direction perpendicular to the surface Z, the outline O4 of the wiring layer 4 overlaps the first magnetic detection element array 31, and the dummy pattern 4D overlaps the second magnetic detection element array 32. The number of magnetic detection elements E' in the first magnetic detection element array 31 that overlaps the outline O4 of the wiring layer 4 and the number of magnetic detection elements E' in the second magnetic detection element array 32 that overlap the outline OD of the dummy pattern 4D in the direction perpendicular to the surface Z are both eight, which is the same number.

[0055] As described above, each of the multiple magnetic detection element arrays 30 is composed of multiple magnetic detection elements E arranged in a matrix. In each magnetic detection element 30, the multiple magnetic detection elements E are connected in series. In the example shown, in each magnetic detection element 30, the multiple magnetic detection elements E are arranged at equal intervals. The magnetic detection element array 30 and the electrodes 3E are electrically connected by wiring W formed on the first layer L1. The magnetic detection element array 30 and other magnetic detection element arrays 30 are also electrically connected by wiring W.

[0056] In the magnetic sensor device 1 of the present disclosure, it is sufficient that the influence of thermal stress on the first magnetic detection element array 31 and the influence of thermal stress on the second magnetic detection element array 32 are balanced. Therefore, when the first magnetic detection element array 31 and the second magnetic detection element array 32 each include a large number of magnetic detection elements E, the number of magnetic detection elements E' overlapping the outlines O4 and OD of the wiring layer 4 or dummy pattern 4D in the first magnetic detection element array 31 and the second magnetic detection element array 32 may not be exactly the same but may differ slightly. For example, when the magnetic detection element array 30 includes 40 magnetic detection elements E, even if one magnetic detection element E' overlaps the outline O4, the influence of thermal stress is reduced to 1 / 40. Therefore, when the first magnetic detection element array 31 and the second magnetic detection element array 32 each include 40 or more magnetic detection elements E, the number of magnetic detection elements E' overlapping the outlines O4 and OD may differ by about one.

[0057] As described above, the dummy pattern 4D is formed on the second layer L2, similar to the wiring layer 4. However, unlike the wiring layer 4, the dummy pattern 4D is not electrically connected to the plurality of magnetic detection element arrays 30. Furthermore, the dummy pattern 4D is not electrically connected to the wiring layer 4 either.

[0058] 18 is a plan view showing an example of a magnetic sensor device 101 in which the influence of thermal stress in the wiring layer 4 is not balanced between the first magnetic detection element array 31 and the second magnetic detection element array 32, shown for comparison with FIGS. 13 to 17. In the magnetic sensor device 101 of the comparative example shown in FIG. 18, the number of magnetic detection elements E' overlapping the contour O4 of the wiring layer 104 in the direction perpendicular to the surface Z is not approximately the same between the first magnetic detection element array 31 and the second magnetic detection element array 32.

[0059] There are 12 magnetic detection elements E' of the first magnetic detection element array 31 that overlap the outline O4 of the wiring layer 104, while there are 2 magnetic detection elements E' of the second magnetic detection element array 32 that overlap the outline O4 of the wiring layer 104, a difference of 10. As described with reference to FIG. 12 , in the direction perpendicular to the surface Z, the position that overlaps the outline O4 of the wiring layer 4 (wiring layer 104) is susceptible to the influence of thermal stress of the rewirings 4.

[0060] In the comparative magnetic sensor device 101, there is a large difference in the number of susceptible magnetic detection elements E', so the effects of thermal stress on the first magnetic detection element array 31 and the second magnetic detection element array 32 are not balanced, which may result in a deterioration in the output characteristics of the magnetic detection element array 30.

[0061] 13 to 17, the number of magnetic detection elements E' overlapping the outlines O4, OD of the wiring layer 4 or the dummy pattern 4D in the direction perpendicular to the surface Z is approximately the same in the first magnetic detection element array 31 and the second magnetic detection element array 32. This balances the effects of thermal stress on the first magnetic detection element array 31 and the second magnetic detection element array 32. Since the resistance ratio and the like are less likely to change between the first magnetic detection element array 31 and the second magnetic detection element array 32, the output characteristics of the magnetic detection elements 30 of the magnetic sensor device 1 are stable. For example, when the magnetic sensor device 1 is configured as an angle sensor, the angle error can be reduced as shown in FIG. 12.

[0062] As described above, the first magnetic detection element array 31 and the second magnetic detection element array 32 constitute one parallel circuit of a bridge circuit. If the resistance ratio between the first magnetic detection element array 31 and the second magnetic detection element array 32 is unlikely to change, the balance condition of the bridge circuit is unlikely to change. Therefore, the output characteristics of the magnetic sensor device 1 can be stabilized.

[0063] The first magnetic detection element array 31 and the second magnetic detection element array 32 are composed of the same number of magnetic detection elements E and have equal areas (meaning that the areas are equal; the same applies below). In the example of the present disclosure, the areas of the regions of the first magnetic detection element array 31 and the second magnetic detection element array that overlap with the wiring layer 4 or the dummy pattern 4D in the direction perpendicular to the surface Z may be equal or unequal (meaning that the areas are not equal; the same applies below).

[0064] For example, in the first example shown in FIG. 13 , the area of ​​the region of the first magnetic detection element array 31 overlapping the wiring layer 4 is 58% of the total area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping the wiring layer 4 is 58% of the total area of ​​the second magnetic detection element array 32. In the direction perpendicular to the surface Z, the areas of the first magnetic detection element array 31 and the second magnetic detection element array overlapping the wiring layer 4 are equal in area. Furthermore, the shapes of the equal-area regions are symmetric. In the example shown, the shapes of the equal-area regions are point-symmetric. Although not shown, the shapes of the equal-area regions may also be line-symmetric.

[0065] 14 , the area of ​​the region of the first magnetic detection element array 31 overlapping the wiring layer 4 is 58% of the entire area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping the wiring layer 4 is 4.5% of the entire area of ​​the second magnetic detection element array 32. In the direction perpendicular to the surface Z, the areas of the first magnetic detection element array 31 and the second magnetic detection element array 32 overlapping the wiring layer 4 are unequal in area. However, as described above, the number of magnetic detection elements E′ overlapping the outline O4 of the wiring layer 4 is six in both the first magnetic detection element array 31 and the second magnetic detection element array 32, which is the same number.

[0066] 15 , like the second example, the area of ​​the region of the first magnetic detection element array 31 overlapping the wiring layer 4 is 58% of the total area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping the wiring layer 4 is 21% of the total area of ​​the second magnetic detection element array 32, resulting in unequal areas. However, as described above, the number of magnetic detection elements E′ overlapping the outline O4 of the wiring layer 4 is the same, six, in both the first magnetic detection element array 31 and the second magnetic detection element array 32. In the third example, unlike the first and second examples, the region of the second magnetic detection element array 32 overlapping the wiring layer 4 is divided into multiple regions.

[0067] 16 , the area of ​​the region of the first magnetic detection element array 31 overlapping the wiring layer 4 is 46% of the entire area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping the dummy pattern 4D is 46% of the entire area of ​​the second magnetic detection element array 32. In the direction perpendicular to the surface Z, the areas of the first magnetic detection element array 31 and the second magnetic detection element array overlapping the wiring layer 4 or the dummy pattern 4D are equal in area. As in the first example described above, the shapes of the equal-area regions are symmetrical.

[0068] 17 , the area of ​​the region of the first magnetic detection element array 31 overlapping the wiring layer 4 is 46% of the total area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping the dummy pattern 4D is 60% of the total area of ​​the second magnetic detection element array 32. In the perpendicular direction Z, the areas of the first magnetic detection element array 31 and the second magnetic detection element array overlapping the wiring layer 4 or the dummy pattern 4D are unequal. However, as described above, the number of magnetic detection elements E′ overlapping the outlines O4, OD of the wiring layer 4 or the dummy pattern 4D is eight in both the first magnetic detection element array 31 and the second magnetic detection element array 32, which is the same number.

[0069] The above-described embodiments are intended to facilitate understanding of the present disclosure and are not intended to limit the present disclosure. The elements of the embodiments, as well as their arrangement, materials, conditions, shapes, sizes, etc., are not limited to those illustrated and can be modified as appropriate. Furthermore, configurations shown in different embodiments can be partially substituted or combined with each other. [Explanation of symbols]

[0070] REFERENCE SIGNS LIST 1...magnetic sensor device, 2...support substrate, 2A...first surface, 2B...second surface, 2E...electrode, 3...sensor chip, 3A...upper surface, 3E...electrode, 3X...first sensor chip, 3Y...second sensor chip, 3Z...third sensor chip, 4...wiring layer, 4D...dummy pattern, 5...sealing resin, 6...electrode, 6P...through hole, 10...sensor substrate, 20...protective film, 30...magnetic detection element array, 31...first magnetic detection element array, 32...second magnetic detection element array, 33...third detection element array, 34...fourth magnetic detection element array, 40...via, 40P...through hole, 41...first wiring layer, 42...second wiring layer, 51-53...resin layer, 101...magnetic sensor device of comparative example, 104...wiring layer of comparative example, 200...camera module, 210...image sensor, 220...lens, 230...driver , 231...first coil, 232...second coil, 233...first magnet, 241...first holding member, 242...second holding member, 243...second magnet, 244...wire, 250...casing, 300...magnet, 400...current sensor, 410...bus bar, 420...coil, 430...feedback circuit, 440...current detector 440, A, B...output port, DR...reference direction, E...magnetic detection element, E' ...magnetic detection element overlapping the outline of the wiring layer or dummy pattern, Itg...current, L1...first layer, L2...second layer, MF...magnetic field, MF1...first magnetic field, MF2...second magnetic field, O...central axis, O4...outline of the wiring layer, OD...outline of the dummy pattern, P...position, Q...distance, S...magnetic field detection value, U, V...direction of hand movement, W...wiring, X...left-right direction, Y...front-back direction, Z...direction perpendicular to the surface, θ...angle.

Claims

1. a plurality of magnetic detection element arrays formed on the first layer; a wiring layer formed in a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays; the plurality of magnetic detection element arrays include a first magnetic detection element array and a second magnetic detection element array, and the first magnetic detection element array and the second magnetic detection element array are each configured with the same number of magnetic detection elements; In a direction perpendicular to the surface from the second layer to the first layer, the number of magnetic detection elements of the first magnetic detection element array overlapping the outline of the wiring layer is the same as the number of magnetic detection elements of the second magnetic detection element array overlapping the outline of the wiring layer, or the difference in number is within 2.5%; a region of the first magnetic detection element array overlapping the wiring layer and a region of the second magnetic detection element array overlapping the wiring layer have unequal areas in the direction perpendicular to the surface; Magnetic sensor device.

2. a plurality of magnetic detection element arrays formed on the first layer; a wiring layer formed on a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays; a dummy pattern formed on the second layer and not electrically connected to the plurality of magnetic detection element arrays, the plurality of magnetic detection element arrays include a first magnetic detection element array and a second magnetic detection element array, and the first magnetic detection element array and the second magnetic detection element array are each configured with the same number of magnetic detection elements; In a direction perpendicular to the surface from the second layer to the first layer, the number of magnetic detection elements of the first magnetic detection element array overlapping the outline of the wiring layer is the same as the number of magnetic detection elements of the second magnetic detection element array overlapping the outline of the dummy pattern, or the difference in number is within 2.5%. Magnetic sensor device.

3. the first magnetic detection element array and the second magnetic detection element array are connected in series across an output port so as to form part of a bridge circuit; The magnetic sensor device according to claim 1 or 2.

4. an area of ​​the first magnetic detection element array overlapping the wiring layer and an area of ​​the second magnetic detection element array overlapping the dummy pattern in the direction perpendicular to the surface, the area of ​​the first magnetic detection element array overlapping the wiring layer and the dummy pattern are equal in area; The magnetic sensor device according to claim 2 .

5. a region of the first magnetic detection element array overlapping the wiring layer and a region of the second magnetic detection element array overlapping the dummy pattern have unequal areas in the direction perpendicular to the surface; The magnetic sensor device according to claim 2 .

6. A magnetic sensor device comprising: Angle sensor.

7. A magnetic sensor device comprising: Magnetic compass.

8. A magnetic sensor device comprising: Current sensor.

9. An autofocus mechanism and / or an optical image stabilization mechanism including the magnetic sensor device according to claim 1 or 2. Camera module.

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