Resin composition, light-shielding film, and partition-attached substrate

Abstract

A purpose of the present invention is to provide a resin composition which enables the formation of a thick portioning wall having both of film tuckless properties after prebaking and heat resistance after curing according to a designed line width of a photomask in the processing with a high light exposure quantity. The purpose of the present invention can be achieved by a resin composition comprising a photoradical generator, a hindered phenol compound and / or a hindered amine compound, a polysiloxane containing a specific structure, and a (meth)acrylic polymer containing a specific structure and / or a cardo polymer containing a specific structure, in which the ratio of the weight of the polysiloxane to the total weight of the (meth)acrylic polymer and the cardo polymer is 30 / 70 to 70 / 30.

Description

[Technical Field]

[0001] The present invention relates to a resin composition, a light-shielding film formed from the resin composition, and a substrate with partition walls having patterned partition walls. [Background technology]

[0002] In recent years, color display devices with improved light utilization efficiency have been proposed, each of which includes a light source, a wavelength conversion unit made of a wavelength-converting phosphor, a polarization separation unit, and a polarization conversion unit (see, for example, Patent Document 1).For example, a color display device has been proposed that includes a blue light source, a liquid crystal element, a phosphor that is excited by blue light to emit red fluorescence, a phosphor that is excited by blue light to emit green fluorescence, and a wavelength conversion unit that has a light-scattering layer that scatters the blue light (see, for example, Patent Document 2).

[0003] However, color filters containing color-converting phosphors as described in Patent Documents 1 and 2 emit fluorescence in all directions, resulting in low light extraction efficiency and insufficient brightness. In particular, in high-definition display devices such as 4K and 8K, pixel sizes become smaller, making brightness issues more pronounced, and higher brightness is therefore required. In order to improve the brightness of a display device, it is effective to separate color-converting phosphors with highly reflective partition walls. Furthermore, the light-blocking properties of the partition walls must be high to prevent color mixing between adjacent pixels. Therefore, there is a demand for partition wall materials that combine high reflectivity and high light-blocking properties. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-131683 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-244383 [Patent Document 3] Japanese Patent Application Laid-Open No. 2000-347394 [Patent Document 4] Japanese Patent Application Laid-Open No. 2006-259421 [Patent Document 5] International Publication No. 2020 / 008969 Summary of the Invention [Problem to be solved by the invention]

[0005] In order to form barrier ribs that have both high reflectivity and high light-shielding properties, the inventors first investigated a method of using a material in which a light-shielding pigment was added to a white barrier rib material using a titanium oxide white pigment that exhibits high reflectivity. However, with this method, the white pigment and the light-shielding pigment absorbed all of the exposure light, preventing the light from reaching the bottom of the film during exposure, resulting in poor pattern processability.

[0006] As described in Patent Documents 3 and 4, techniques have been proposed in which a specific metal compound is added to blacken the film by baking it after pattern formation. However, these blackening techniques have the problem that baking at 400°C or higher is required, and heating at 250°C or lower does not improve the light-blocking properties.

[0007] Therefore, the inventors devised a design that allows the exposure light to pass through during the pattern exposure process after film formation, and increases the light-blocking properties after heating the exposed film at a temperature of 120°C or higher and 250°C or lower. This was achieved by using a resin composition containing a resin, an organometallic compound containing at least one metal selected from the group consisting of silver, gold, platinum, and palladium, a photopolymerization initiator or a quinone diazide compound, and a solvent (see Patent Document 5). In particular, the inventors discovered that using polysiloxane as the resin allows the formation of partition walls with high heat resistance.

[0008] However, this technology has the problem that when polysiloxane is used as the resin, the film becomes tacky after pre-baking, making it difficult to handle the substrate during processing. On the other hand, when (meth)acrylic polymers and / or cardo polymers are used as the resin, tackiness after pre-baking is improved, but when forming thick barrier ribs with a height of 10 μm or more, differences in the degree of hardening occur between the top and bottom of the film, and wrinkles occur due to stress differences after curing. Furthermore, it has been found that barrier ribs formed using (meth)acrylic polymers and / or cardo polymers have lower heat resistance and weather resistance than those formed using siloxane polymers.

[0009] To form a thick barrier rib with a height of 10 μm or more, 300 to 500 mJ / cm 2 In some cases, pattern processing is performed with a high exposure dose, but in such cases, another problem has become apparent: the line width of the formed partition wall becomes significantly wider than the line width design of the photomask.

[0010] Therefore, an object of the present invention is to provide a resin composition that can form thick film partition walls that have both tackless film properties after pre-baking and heat resistance after curing, in accordance with the designed line width of a photomask even during high exposure processing. [Means for solving the problem]

[0011] As a result of extensive research, the inventors of the present application have discovered that by forming partition walls from a resin composition containing a photoradical generator, a hindered phenol compound and / or a hindered amine compound, a polysiloxane having a specific structure, and a (meth)acrylic polymer having a specific structure and / or a cardo-based polymer having a specific structure, wherein the ratio of the weight of the polysiloxane to the total weight of the (meth)acrylic polymer and the cardo-based polymer is 30 / 70 to 70 / 30, it is possible to form thick film partition walls that have both tackless properties after pre-baking and heat resistance after curing, according to the design line width of the photomask, even during high exposure processing, and have completed the present invention.

[0012] That is, the present invention provides the following. [1] (i) a photoradical generator; (ii) a polysiloxane containing a structure having an aromatic ring represented by the following general formula (1) or (2) and a structure having a photoradical polymerizable group represented by the following general formula (3), (iii) a (meth)acrylic polymer containing a structure having an aromatic ring represented by the following general formula (4) and a structure having a photoradical polymerizable group represented by the following general formula (5) and / or a cardo polymer having a structure represented by the following general formula (6) or the following general formula (7) and a photoradical polymerizable group, A resin composition comprising the above, wherein the weight ratio of the polysiloxane to the total weight of the (meth)acrylic polymer and the cardo polymer is 30 / 70 to 70 / 30.

[0013] [ka]

[0014] (In general formulas (1) to (7), R 1 and R 2 R each independently represents hydrogen, a hydroxy group, an alkoxy group, a group having a siloxane bond, or a monovalent organic group having 1 to 30 carbon atoms. 3 and R 4 R each independently represents hydrogen, a hydroxyl group, or a monovalent organic group having 1 to 30 carbon atoms. 5 ~R 7 are each independently hydrogen, a monovalent organic group having 1 to 30 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an adjacent R 5 ~R 7 R represents a group that forms an aromatic ring with other groups. 8represents hydrogen, a monovalent organic group having 1 to 30 carbon atoms, or an aryl group having 6 to 20 carbon atoms. X1, X2, X3, and X4 each independently represent an organic group having an aromatic ring. Y1 and Y2 each independently represent an organic group having a photoradical polymerizable group. p, q, and r each independently represent an integer of 0 to 2, and s represents an integer of 1 or 2. a, b, c, d, e, f, and g each independently represent an integer of 1 or greater. When a to e are 2 or greater, multiple R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , X1, X2, X3, X4, Y1 and Y2 may be the same or different.) [2] The resin composition according to [1], wherein the hindered phenol compound is a hindered phenol compound having two or more hindered phenol groups in one molecule. [3] The resin composition according to [1] or [2], wherein the hindered amine compound is a piperidine compound. [4] The resin composition according to any one of [1] to [3], wherein the hindered amine compound is a piperidine compound having a photopolymerizable group. [5] The resin composition according to any one of [1] to [4], wherein the weight-average molecular weight of the polysiloxane is 5,000 to 300,000, and the polysiloxane contains 30 to 70 mol % of repeating units represented by the general formula (1) or (2) and 15 to 70 mol % of repeating units represented by the general formula (3) in all repeating units of the polysiloxane. [6] The resin composition according to any one of [1] to [5], wherein the (meth)acrylic polymer and / or the cardo polymer has a glass transition temperature of 60° C. or higher. [7] The resin composition according to any one of [1] to [6], further comprising at least one of a white pigment, a light-blocking pigment, and an organometallic compound containing at least one metal selected from the group consisting of silver, gold, platinum, and palladium. [8] The resin composition according to any one of [1] to [7], wherein the photoradical generator comprises an oxime ester compound and a phosphine oxide compound. [9] The resin composition according to any one of [1] to [8], further comprising a liquid-repellent compound having a photopolymerizable group.

[10] A light-shielding film obtained by curing the resin composition according to any one of [1] to [9].

[11] A substrate with partition walls having a pattern (A-1) formed on a base substrate using the resin composition according to any one of [1] to [9], wherein the partition walls have a reflectance of 10% to 60% per 10 μm thickness at a wavelength of 550 nm and an OD value of 1.0 to 3.0 per 10 μm thickness at a wavelength of 450 nm.

[12] The substrate with partition walls according to

[11] , wherein the (A-1) patterned partition walls contain a resin, a white pigment, and a light-shielding pigment, and the light-shielding pigment is a pigment selected from titanium nitride, zirconium nitride, carbon black, a mixed pigment of a red pigment and a blue pigment in a weight ratio of 20 / 80 to 80 / 20, and particles of at least one metal oxide or metal selected from the group consisting of palladium oxide, platinum oxide, gold oxide, silver oxide, palladium, platinum, gold, and silver.

[13] The substrate with partition walls according to

[11] or

[12] , wherein the partition walls formed in a pattern (A-1) further contain a hindered amine compound.

[14] The substrate with partition walls according to any one of

[11] to

[13] , further comprising (A-2) a patterned light-shielding partition wall between the base substrate and the patterned partition wall (A-1), the patterned light-shielding partition wall having an OD value of 0.5 or more per 1.0 μm of thickness.

[15] The substrate with partition walls according to any one of

[11] to

[14] , further comprising pixel layers (B) containing a color-converting luminescent material arranged and separated by the patterned partition walls (A-1).

[16] A display device comprising the substrate with partition walls according to any one of

[11] to

[15] and a light source selected from a liquid crystal cell, an organic EL cell, a mini LED cell, and a micro LED cell. [Effects of the Invention]

[0015] The resin composition of the present invention can form a fine thick film barrier rib pattern that has excellent tackless properties after pre-baking and heat resistance after curing, and that matches the designed line width of the photomask even during high exposure processing. [Brief explanation of the drawings]

[0016] [Figure 1] FIG. 1 is a cross-sectional view showing one embodiment of a partition-attached substrate of the present invention having patterned partition walls. [Figure 2] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having patterned partition walls and pixels containing a color-conversion light-emitting material. [Figure 3] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having patterned partition walls, a color-converting light-emitting material, and a light-shielding partition wall. [Figure 4] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having a patterned partition wall, a color-converting light-emitting material, and a color filter. [Figure 5] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having a patterned partition wall, a color-converting light-emitting material, a light-shielding partition wall, and a color filter. [Figure 6] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having a patterned partition wall, a color-conversion light-emitting material, and a low refractive index layer. [Figure 7] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having a patterned partition wall, a color-converting light-emitting material, a low refractive index layer, and an inorganic protective layer I. [Figure 8] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having a patterned partition wall, a color-converting light-emitting material, a low refractive index layer, and an inorganic protective layer I. [Figure 9] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having a patterned partition wall, a color-converting light-emitting material, a light-shielding partition wall, a color filter, a low refractive index layer, and an inorganic protective layer I. [Figure 10]FIG. 2 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having a patterned partition wall, a color-converting light-emitting material, a low refractive index layer, and an inorganic protective layer II. [Figure 11] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having a patterned partition wall, a color-converting light-emitting material, a color filter, and an inorganic protective layer III and / or a yellow organic protective layer. [Figure 12] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having a patterned partition wall, a color-converting light-emitting material, and an inorganic protective layer IV and / or a yellow organic protective layer. [Figure 13] 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having pixels containing patterned partition walls and light-emitting sources selected from organic EL cells, mini LED cells, and micro LED cells. [Figure 14] FIG. 1 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having pixels containing patterned partition walls, a color-converting light-emitting material, and a light-emitting source selected from organic EL cells, mini LED cells, and micro LED cells. [Figure 15] FIG. 1 is a cross-sectional view showing the configuration of a display device used for evaluating color mixing in Examples. DETAILED DESCRIPTION OF THE INVENTION

[0017]

[0033] Preferred embodiments of the resin composition, the light-shielding film formed from the resin composition, the method for producing the light-shielding film, and the substrate with partition walls according to the present invention will be specifically described below, but the present invention is not limited to the following embodiments and can be modified in various ways depending on the purpose and application. The resin composition of the present invention can be suitably used as a material for forming partition walls that separate light-emitting sources such as color-converting phosphors, organic EL cells, mini LED cells, and micro LED cells.

[0018] The resin composition of the present invention contains a photoradical generator, a hindered phenol compound and / or a hindered amine compound, a polysiloxane having a specific structure, and a (meth)acrylic polymer having a specific structure and / or a cardo polymer having a specific structure, and it is preferable that the ratio of the weight of the polysiloxane to the total weight of the (meth)acrylic polymer and the cardo polymer is 30 / 70 to 70 / 30.

[0019] When the resin composition of the present invention is used for forming a pattern of partition walls (A-1) described below, it is preferable that the resin composition of the present invention has negative photosensitivity. In order to impart negative photosensitivity, the resin composition of the present invention preferably contains a photoradical generator. By containing the photoradical generator, partition walls having a highly precise pattern shape can be formed.

[0020] The photoradical generator may be any compound that decomposes and / or reacts upon irradiation with light (including ultraviolet light and electron beams) to generate radicals. For example, α-aminoalkylphenone compounds such as 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1; phosphine oxide compounds such as 2,4,6-trimethylbenzoylphenylphosphine oxide, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, and bis(2,6-dimethoxybenzoyl)-(2,4,4-trimethylpentyl)-phosphine oxide; 1-phenyl-1,2-propanedione-2-( Oxime ester compounds such as 1-phenyl-1,2-butanedione-2-(O-ethoxycarbonyl)oxime, 1,2-octanedione-1-[4-(phenylthio)-2-(O-benzoyloxime)], 1-phenyl-1,2-butadione-2-(O-methoxycarbonyl)oxime, 1,3-diphenylpropanetrione-2-(O-ethoxycarbonyl)oxime, and ethanone-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-1-(O-acetyloxime). Two or more of these may be contained.

[0021] Among these, in order to form thick partition walls, it is preferable to contain an oxime ester compound that is resistant to oxygen damage and effective for surface curing, and a phosphine oxide compound that absorbs longer wavelength light to generate radicals and is effective for bottom curing. From the viewpoint of effectively promoting radical curing, the content of the photoradical generator in the resin composition of the present invention is preferably 0.01 wt % or more, and more preferably 1 wt % or more, based on the solid content. On the other hand, from the viewpoint of suppressing elution of residual photoradical generator, the content of the photoradical generator is preferably 20 wt % or less, and more preferably 10 wt % or less, based on the solid content.

[0022] The resin composition of the present invention preferably contains a hindered phenol compound and / or a hindered amine compound. By containing a hindered phenol compound and / or a hindered amine compound, radicals can be appropriately trapped to suppress overreaction, and line width thickening can be suppressed when a partition wall pattern is formed with a high exposure dose, making it possible to form a fine partition wall pattern with the designed line width of the photomask.

[0023] The hindered phenol compound is preferably a hindered phenol compound having two or more hindered phenol groups per molecule. Here, the hindered phenol group refers to a functional group containing a structure having at least one t-butyl group at a carbon atom adjacent to the carbon atom to which the hydroxyl group of a phenolic hydroxyl group is bonded. The hindered phenol group preferably has a structure having t-butyl groups at two carbon atoms adjacent to the carbon atom to which the hydroxyl group of the phenolic hydroxyl group is bonded. By containing two or more hindered phenol groups per molecule, the radical trapping effect is appropriately limited, suppressing line width thickening when forming a barrier rib pattern at a high exposure dose, and enabling the formation of a fine barrier rib pattern according to the designed line width of the photomask. It is more preferable to contain three or more hindered phenol groups per molecule, and even more preferable to contain four or more hindered phenol groups per molecule.

[0024] Examples of the hindered phenol compound include 3,5-di-t-butyl-4-hydroxytoluene, octadecyl 3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, hexamethylene bis[3(3,5-di-t-butyl-4-hydroxyphenylpropionate], thiodiethylene bis[3(3,5-di-t-butyl-4-hydroxyphenylpropionate], ethylene bis(oxyethylene)bis[3-(5-t-butyl-4-hydroxy-m-tolyl] ) propionate, tris-(3,5-di-t-butyl-4-hydroxybenzyl)-isocyanurate, 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)benzene, pentaerythritol tetrakis(3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 2-t-butyl-6-(3-t-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl acrylate, 2-[1-(2-hydroxy 4,6-di-t-pentylphenyl acrylate, 2,2'-methylenebis(6-t-butyl-4-methylphenol or 4,4'-butylidenebis(6-t-butyl-3-methylphenol), 1,3,5-tris(3,5-di-t-butyl-4-hydroxybenzyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, 4,4',4''-(1-methylpropanyl-3-ylidene)tris(6-t- butyl-m-cresol), 6,6'-di-t-butyl-4,4'-butylidenedi-m-cresol, 3,9-bis-(2-(3-(3-t-butyl-4-hydroxy-5-methylphenyl)propionyloxy)-1,1-dimethylethyl)-2,4,8,10-tetraoxaspiro[5,5]undecene, 1,3,5-tris(3,5-di-t-butyl-4-hydroxyphenylmethyl)-2,4,6-trimethylbenzene, etc. Two or more of these may be contained.

[0025] Among these, hexamethylene bis[3(3,5-di-t-butyl-4-hydroxyphenylpropionate], thiodiethylene bis[3(3,5-di-t-butyl-4-hydroxyphenylpropionate], ethylene bis(oxyethylene) bis[3-(5-t-butyl-4-hydroxy-m-tolyl)propionate], tris-(3,5-di-t-butyl-4-hydroxybenzyl)isocyanurate, 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)isocyanurate, and 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)isocyanurate have two or more hindered phenol groups in one molecule. hydroxybenzyl)benzene, pentaerythritol tetrakis(3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 2-t-butyl-6-(3-t-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenyl acrylate, 2-[1-(2-hydroxy3,5-di-t-pentylphenyl)ethyl]-4,6-di-t-pentylphenyl acrylate, 2,2'-methylenebis(6-t-butyl-4-methylphenol or 4,4'-butylidenebis(6-t-butyl-3-methylphenol), 1,3 ,5-Tris(3,5-di-t-butyl-4-hydroxybenzyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, 4,4',4''-(1-methylpropanyl-3-ylidene)tris(6-t-butyl-m-cresol), 6,6'-di-t-butyl-4,4'-butylidene-m-cresol, 3,9-bis-(2-(3-(3-t-butyl-4-hydroxy-5-methylphenyl)propionyloxy)-1,1-dimethylethyl)-2,4,8,10-tetraoxaspiro[5,5]undecene, 1,3,5- Tris(3,5-di-t-butyl-4-hydroxyphenylmethyl)-2,4,6-trimethylbenzene is preferred, and examples thereof include 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)benzene, pentaerythritol tetrakis(3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 2-t-butyl-6-(3-t-butyl-2-hydroxy-5-methylbenzyl)-4-methylphenylacrylate, 2-[1-(2-hydroxy3,5-di-t-pentylphenyl)ethyl]-4,6-di-t-pentylphenyl acrylate, 2,2'-methylenebis(6-t-butyl-4-methylphenol) or 4,4'-butylidenebis(6-t-butyl-3-methylphenol), 1,3,5-tris(3,5-di-t-butyl-4-hydroxybenzyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, 4,4',4''-(1-methylpropanyl-3-ylidene)tris(6-t-butyl-m-cresol), and 1,3,5-tris(3,5-di-t-butyl-4-hydroxyphenylmethyl)-2,4,6-trimethylbenzene are more preferred.

[0026] The hindered amine compound refers to a compound having at least one hindered amino group in the molecule. The hindered amino group is preferably a functional group having a secondary or tertiary amine structure bonded to two quaternary carbons. The hindered amine compound is preferably a piperidine compound. By containing a piperidine compound, the radical trapping effect is appropriately limited, suppressing line width thickening when forming a barrier rib pattern with high exposure dose, and enabling the formation of a fine barrier rib pattern according to the designed line width of the photomask. A piperidine compound having a 2,2,6,6-tetramethylpiperidine structure is more preferred.

[0027] Examples of the hindered amine compound include bis(1,2,2,6,6-pentamethyl-4-piperidyl)[[3,5-bis(1,1-dimethylethyl)-4-hydroxyphenyl]methyl]butylmalonate, bis(1,2,2,6,6-pentamethyl-4-piperidyl)sebacate, methyl-1,2,2,6,6-pentamethyl-4-piperidylsebacate, 1,2,2,6,6-pentamethyl-4-piperidylmethacrylate, 2,2,6,6-tetramethyl- Examples include 4-piperidyl methacrylate, a reaction product of decanedioic acid bis(2,2,6,6-tetramethyl-1-(octyloxy)-4-piperidinyl) ester, 1,1-dimethylethyl hydroperoxide, and octane, tetrakis(1,2,2,6,6-pentamethyl-4-pyridyl)butane-1,2,3,4-tetracarboxylate, and tetrakis(2,2,6,6-tetramethyl-4-pyridyl)butane-1,2,3,4-tetracarboxylate.

[0028] Among these, 1,2,2,6,6-pentamethyl-4-piperidyl methacrylate and 2,2,6,6-tetramethyl-4-piperidyl methacrylate, which are piperidine compounds having a photopolymerizable group, are preferred. By using a piperidine compound having a photopolymerizable group, radicals can be trapped while the radical reaction proceeds, and curing of the bottom of the film can be further promoted. In this case, the photopolymerizable group may be photopolymerized in the partition wall (A-1) made of a photocured product of the negative-type photosensitive resin composition.

[0029] The content of the hindered phenol compound and / or hindered amine compound in the resin composition of the present invention is preferably 0.050 wt% or more, more preferably 0.070 wt% or more, based on the solid content, from the viewpoint of suppressing line thickening. On the other hand, from the viewpoint of efficiently proceeding with the radical reaction, the content of the hindered phenol compound and / or hindered amine compound is preferably 5.0 wt% or less, more preferably 3.0 wt% or less, based on the solid content. In particular, when a hindered phenol compound is used, the radical trapping effect is large, so the content is more preferably 0.10 wt% to 0.50 wt% based on the solid content. Furthermore, when a piperidine compound having a photopolymerizable group is used as the hindered amine compound, the content is more preferably 0.10 wt% to 2.5 wt% based on the solid content, from the viewpoint of accelerating the curing of the film bottom.

[0030] The resin composition of the present invention contains a polysiloxane as a resin. The polysiloxane has the function of improving the crack resistance, weather resistance, and heat resistance of the partition walls. From the viewpoint of improving the crack resistance of the partition walls during heat treatment, the content of polysiloxane in the solid content of the resin composition is preferably 10% by weight or more, and more preferably 15% by weight or more. On the other hand, from the viewpoint of improving light fastness, the content of polysiloxane in the solid content of the resin composition is preferably 55% by weight or less, and more preferably 50% by weight or less. Here, the solid content refers to all components contained in the resin composition excluding volatile components such as solvents. The amount of solid content can be determined by heating the resin composition and measuring the residue after evaporating the volatile components.

[0031] Polysiloxane is a hydrolysis-dehydration condensation product of organosilane. Polysiloxane contains a structure having an aromatic ring represented by the following general formula (1) or (2) and a structure having a photoradical polymerizable group represented by the following general formula (3). It may further contain other repeating units.

[0032] [ka]

[0033] (In general formulas (1) to (3), R 1 and R 2 each independently represents hydrogen, a hydroxy group, an alkoxy group, a group having a siloxane bond, or a monovalent organic group having 1 to 30 carbon atoms. X1, X2, and X3 represent an organic group having an aromatic ring. Y1 represents an organic group having a photoradical polymerizable group. a, b, and c each independently represent an integer of 1 or more. When a to c are 2 or more, multiple R 1 , R 2 , X1, X2, X3, and Y1 may be the same or different. R 1 or R 2 The "group having a siloxane bond" represented by the formula (I) refers to a "-Si-O-Si-" bond formed by condensation between silanol groups. The functional group bonded to the Si atom to which the bond is made is not particularly limited. 1 or R 2 The "monovalent organic group having 1 to 30 carbon atoms" represented by the formula (I) is preferably an alkyl group having 1 to 6 carbon atoms (including linear and branched alkyl groups). Specific preferred examples thereof include a methyl group, an ethyl group, an n-propyl group, and an isopropyl group. The "organic group having an aromatic ring" represented by X1, X2, or X3 is preferably an aromatic hydrocarbon group having 6 to 15 carbon atoms. Specific preferred examples thereof include a phenyl group, a benzyl group, a styryl group, a naphthyl group, and a biphenyl group. The "photoradically polymerizable group" represented by Y1 is preferably an ethylenically unsaturated group, and more preferably a functional group containing a methacryl group and / or an acrylic group. Specific examples of these include a 3-methacryloxypropyl group and a 3-acryloxypropyl group. The a, b, and c each independently represent an integer of 1 or more, with a preferably being 10 to 60, and more preferably being 20 to 55, b preferably being 10 to 60, and more preferably being 20 to 55, and c preferably being 5 to 60, and more preferably being 10 to 50.

[0034] By including a repeating unit derived from an alkoxysilane compound containing an organic group having an aromatic ring represented by general formula (1) or (2), the Tg of the polysiloxane can be increased, and the tackless properties after pre-baking can be improved.

[0035] Of all repeating units in the polysiloxane, it is preferable that the repeating units represented by general formula (1) or (2) account for 20 to 80 mol %. By containing 20 mol % or more of repeating units represented by general formula (1) or (2), the tackless property after pre-baking can be further improved. The content of repeating units represented by general formula (1) or (2) is more preferably 25 mol % or more, and even more preferably 30 mol % or more. On the other hand, by containing 80 mol % or less of repeating units represented by general formula (1) or (2), siloxane thermal condensation in the film can be efficiently promoted, and the degree of hardening of the film can be improved. The content of repeating units represented by general formula (1) or (2) is more preferably 75 mol % or less, and even more preferably 70 mol % or less.

[0036] Among the alkoxysilane compounds containing an organic group having an aromatic ring represented by general formula (1) or (2), it is preferable to contain a repeating unit derived from a bifunctional alkoxysilane compound containing two organic groups having an aromatic ring represented by general formula (2). By containing a repeating unit derived from a bifunctional alkoxysilane compound represented by general formula (2), excessive thermal polymerization (condensation) of polysiloxane due to heating can be suppressed, and the crack resistance of the partition walls can be improved.

[0037] By containing 10 mol% or more of the repeating unit represented by general formula (2), crack resistance can be further improved. The content of the repeating unit represented by general formula (2) is more preferably 15 mol% or more, and even more preferably 20 mol% or more. On the other hand, by containing 80 mol% or less of the repeating unit represented by general formula (2), the molecular weight of the polysiloxane can be sufficiently increased during polymerization, improving coatability. The content of the repeating unit represented by general formula (2) is more preferably 70 mol% or less.

[0038] Furthermore, since the polysiloxane contains a repeating unit derived from an alkoxysilane compound containing an organic group having a photoradical polymerizable group represented by general formula (3), a crosslinking reaction proceeds in the exposed areas due to the radicals generated from the photoradical generator, thereby increasing the degree of cure in the exposed areas.

[0039] Of all the repeating units in the polysiloxane, it is preferable that the repeating units represented by general formula (3) account for 10 to 80 mol %. By containing 10 mol % or more of the repeating units represented by general formula (3), radical crosslinking between polysiloxanes in the film can be efficiently promoted, thereby improving the degree of hardening of the film. The content of the repeating units represented by general formula (3) is more preferably 12 mol % or more, and even more preferably 15 mol % or more. On the other hand, by containing 80 mol % or less of the repeating units represented by general formula (3), excessive radical crosslinking of the polysiloxane can be suppressed, and the crack resistance of the partition wall can be improved. The content of the repeating units represented by general formula (3) is more preferably 75 mol % or less, and even more preferably 70 mol % or less.

[0040] Other repeating units that may be contained in the polysiloxane include repeating units derived from an alkoxysilane compound containing an organic group having a cyclic ether group such as an epoxy group and / or an oxetanyl group, repeating units derived from an alkoxysilane compound containing an organic group having an alkyl group having 1 to 30 carbon atoms, repeating units derived from an alkoxysilane compound containing an organic group having an acid anhydride, and repeating units derived from an alkoxysilane compound containing an organic group having a fluorine group. These do not necessarily need to be contained, and if they are contained, their content is preferably 80 mol % or less, more preferably 70 mol % or less, of all repeating units.

[0041] The repeating units represented by the general formulas (1), (2), and (3) are derived from alkoxysilane compounds represented by the following general formulas (8), (9), and (10), respectively. That is, polysiloxanes containing repeating units represented by the general formulas (1), (2), and (3) can be obtained by hydrolysis and polycondensation of alkoxysilane compounds containing alkoxysilane compounds represented by the following general formulas (8), (9), and (10). Other alkoxysilane compounds may also be used.

[0042] [ka]

[0043] In the above general formulas (8), (9) and (10), R 1 , R 2 , X1, X2, X3, and Y1 are R in general formulas (1), (2), and (3), respectively. 1 , R 2 , X1, X2, X3, and Y1 represent the same groups. 9 may be the same or different and represent a monovalent organic group having 1 to 20 carbon atoms, preferably an alkyl group having 1 to 6 carbon atoms. 9 )2" is the notation for the Si atom with "―(OR 9 )" is bonded.

[0044] Examples of the alkoxysilane compound represented by general formula (8) include aromatic ring-containing alkoxysilane compounds such as phenyltrimethoxysilane, 1-naphthyltrimethoxysilane, 2-naphthyltrimethoxysilanethyltrimethoxysilane, biphenyltrimethoxysilane, 3-trimethoxysilylpropylphthalic anhydride, 3-triethoxysilylpropylphthalic anhydride, phenylmethyldimethoxysilane, phenylethyldimethoxysilane, phenylpropyldimethoxysilane, and styryltrimethoxysilane. Two or more of these may be used.

[0045] Examples of the alkoxysilane compound represented by general formula (9) include alkoxysilane compounds containing two aromatic rings, such as diphenyldimethoxysilane, 1-naphthylphenyldimethoxysilane, tolylphenyldimethoxysilane, biphenylphenyldimethoxysilane, 1-naphthyltolyldimethoxysilane, and 1-naphthylbiphenyldimethoxysilane. Two or more of these may be used. Among these, diphenyldimethoxysilane, diphenyldiethoxysilane, styryltrimethoxysilane, and styryltriethoxysilane are preferred from the viewpoint of crack resistance and tackiness.

[0046] Examples of alkoxysilane compounds represented by general formula (10) include photoradical polymerizable group-containing alkoxysilane compounds such as vinyltrimethoxysilane, allyltrimethoxysilane, γ-acryloylpropyltrimethoxysilane, γ-acryloylpropyltriethoxysilane, γ-methacryloylpropyltrimethoxysilane, γ-methacryloylpropyltriethoxysilane, vinylmethyldimethoxysilane, styrylmethyldimethoxysilane, γ-methacryloylpropylmethyldimethoxysilane, and γ-acryloylpropylmethyldimethoxysilane. Two or more of these may be used. Among these, γ-acryloylpropyltrimethoxysilane, γ-acryloylpropylmethyldimethoxysilane, γ-methacryloylpropyltrimethoxysilane, and γ-methacryloylpropylmethyldimethoxysilane are preferred from the viewpoint of photopolymerization reactivity.

[0047] Since the styryl group is both a photoradical polymerizable group and an aromatic group, when a styryl group-containing alkoxysilane compound such as styryltrimethoxysilane or styryltriethoxysilane is used as the alkoxysilane compound represented by general formula (10), it is not necessary to include any other alkoxysilane compounds represented by general formula (8) or (9). In other words, when a polysiloxane contains a structure having a styryl group as the structure represented by general formula (3), it is not necessary to include any other structure represented by general formula (1) or (2). Similarly, when a styryl group-containing alkoxysilane compound such as styryltrimethoxysilane or styryltriethoxysilane is used as the alkoxysilane compound represented by general formula (8), it is not necessary to include any other alkoxysilane compounds represented by general formula (10). In other words, when a polysiloxane contains a structure having a styryl group as the structure represented by general formula (1), it is not necessary to include any other structure represented by general formula (3). In this case, the content of the repeating unit having a structure with a styryl group is preferably 12 mol% or more, more preferably 15 mol% or more, from the viewpoint of improving the tackless property after pre-baking. On the other hand, the content of the repeating unit having a structure with a styryl group is more preferably 70 mol% or less, even more preferably 60 mol% or less, from the viewpoint of suppressing excessive radical crosslinking of the polysiloxane and improving the crack resistance of the partition walls.

[0048] Other alkoxysilane compounds include, for example, dimethyldimethoxysilane, ethylmethyldimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethylmethyldimethoxysilane, 2-(3,4-epoxycyclohexyl)ethylethyldimethoxysilane, 3-dimethylmethoxysilylpropylsuccinic anhydride, 3-dimethylethoxysilylpropylsuccinic anhydride, trifluoropropylmethyldimethoxysilane, Silanes, bifunctional alkoxy compounds such as trifluoropropylethyldimethoxysilane; trifunctional alkoxysilane compounds such as methyltrimethoxysilane, ethyltrimethoxysilane, propyltrimethoxysilane, propyltriethoxysilane, isobutyltrimethoxysilane, 3-isocyanatopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-ureidopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane; 3-glycidoxypropyltrimethoxysilane, 2-(3,4-ethylhexyl)-2-methyl-2-propanol; Epoxy group- or oxetane group-containing alkoxysilane compounds such as 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltriethoxysilane, and 3-ethyl-3-{[3-(trimethoxysilyl)propoxy]methyl}oxetane; 3-trimethoxysilylpropionic acid, 4-trimethoxysilylbutyric acid, 5-trimethoxysilylvaleric acid, 3-trimethoxysilylpropylsuccinic anhydride, 3-triethoxysilylpropylsuccinic anhydride, and 3-trimethoxysilylpropylsilane. Examples of suitable alkoxysilane compounds include carboxyl group-containing alkoxysilane compounds such as cyclohexyldicarboxylic anhydride and 3-trimethoxysilylpropylphthalic anhydride; fluorine group-containing alkoxysilane compounds such as trifluoropropyltrimethoxysilane and perfluoropentyltrimethoxysilane; tetrafunctional alkoxysilane compounds such as tetramethoxysilane, tetraethoxysilane, and silicate 51 (tetraethoxysilane oligomer); and monofunctional alkoxysilane compounds such as trimethylmethoxysilane and triphenylmethoxysilane. Two or more of these may be used.

[0049] The other alkoxysilane compounds preferably contain at least one carboxyl group-containing alkoxysilane compound, which improves the solubility of unexposed areas and improves resolution during pattern processing.

[0050] The weight average molecular weight (Mw) of the polysiloxane is preferably 1,000 or more, more preferably 2,000 or more, from the viewpoint of coatability. From the viewpoint of tackiness, it is even more preferably 5,000 or more. On the other hand, from the viewpoint of developability, the Mw of the polysiloxane is preferably 500,000 or less, more preferably 300,000 or less. Here, the Mw of the polysiloxane in the present invention refers to the polystyrene equivalent value measured by gel permeation chromatography (GPC). The measurement method is as described in the examples below.

[0051] Polysiloxane can be obtained by hydrolyzing the organosilane compound described above and then subjecting the hydrolyzate to a dehydration condensation reaction in the presence or absence of a solvent. Various conditions for hydrolysis can be set in accordance with properties suitable for the intended use, taking into consideration the reaction scale, size and shape of the reaction vessel, etc. Examples of various conditions include acid concentration, reaction temperature, reaction time, etc. For the hydrolysis reaction, an acid catalyst such as hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, sulfuric acid, phosphoric acid, polyphosphoric acid, polycarboxylic acids or their anhydrides, ion exchange resins, etc. Among these, an acidic aqueous solution containing an acid selected from formic acid, acetic acid, and phosphoric acid is preferred.

[0052] When an acid catalyst is used in the hydrolysis reaction, the amount of acid catalyst added is preferably 0.05 parts by weight or more, more preferably 0.1 parts by weight or more, per 100 parts by weight of the total alkoxysilane compounds used in the hydrolysis reaction, from the viewpoint of promoting the hydrolysis more rapidly. On the other hand, from the viewpoint of appropriately controlling the progress of the hydrolysis reaction, the amount of acid catalyst added is preferably 20 parts by weight or less, more preferably 10 parts by weight or less, per 100 parts by weight of the total alkoxysilane compounds. Here, the amount of total alkoxysilane compounds refers to the amount including all of the alkoxysilane compounds, their hydrolysates, and their condensates. The same applies hereinafter.

[0053] The hydrolysis reaction can be carried out in a solvent, which can be appropriately selected in consideration of the stability, wettability, volatility, etc. of the resin composition. When a solvent is produced by the hydrolysis reaction, it is possible to carry out the hydrolysis without a solvent. When used in a resin composition, it is also preferable to adjust the resin composition to an appropriate concentration by adding a solvent after the hydrolysis reaction is completed. Alternatively, after the hydrolysis, all or part of the produced alcohol can be distilled and removed by heating and / or under reduced pressure, and then a suitable solvent can be added.

[0054] Examples of methods for the dehydration condensation reaction include heating the silanol compound solution obtained by the hydrolysis reaction of the organosilane compound as is. The heating temperature is preferably 50°C or higher and the boiling point of the solvent or lower, and the heating time is preferably 1 to 100 hours. Furthermore, reheating or the addition of a base catalyst may be performed to increase the degree of polymerization of the polysiloxane. Depending on the purpose, after the dehydration condensation reaction, an appropriate amount of the produced alcohol may be distilled and removed under heating and / or reduced pressure, and then a suitable solvent may be added.

[0055] The resin composition of the present invention further contains, as a resin, a (meth)acrylic polymer including a structure having an aromatic ring represented by the general formula (4) and a structure having a photoradical polymerizable group represented by the general formula (5), and / or a cardo polymer having a structure represented by the general formula (6) or the general formula (7) and a photoradical polymerizable group. The (meth)acrylic polymer and / or cardo polymer has the function of improving tacklessness after prebaking. From the viewpoint of improving tacklessness after prebaking, the content of the (meth)acrylic polymer and / or cardo polymer in the solid content of the resin composition is preferably 10% by weight or more, more preferably 15% by weight or more. On the other hand, from the viewpoint of improving the heat resistance of the partition walls, the content of the (meth)acrylic polymer and / or cardo polymer in the solid content of the resin composition is preferably 55% by weight or less, more preferably 50% by weight or less.

[0056] The (meth)acrylic polymer is preferably a polymer obtained by radical polymerization of a (meth)acrylic compound and / or a styrene compound. There are no particular limitations on the catalyst for radical polymerization, and azo compounds such as azobisisobutyronitrile and organic peroxides such as benzoyl peroxide are commonly used. The radical polymerization conditions can be set appropriately, but for example, it is preferable to add a (meth)acrylic compound and / or a styrene compound and a radical polymerization catalyst to a solvent, thoroughly replace the atmosphere in a reaction vessel with nitrogen by bubbling or degassing under reduced pressure, and then carry out the reaction for 30 to 300 minutes at 60 to 110° C. Furthermore, a chain transfer agent such as a thiol compound may be used as needed.

[0057] When the (meth)acrylic polymer has an ethylenically unsaturated bond, the (meth)acrylic polymer is preferably one obtained, for example, by radical polymerization of a (meth)acrylic compound and / or a styrene compound followed by an addition reaction with a glycidyl compound having an ethylenically unsaturated double bond group. There are no particular limitations on the catalyst used in the addition reaction of the glycidyl compound having an ethylenically unsaturated double bond group, and known catalysts can be used. Examples include amino-based catalysts such as dimethylaniline, 2,4,6-tris(dimethylaminomethyl)phenol, and dimethylbenzylamine; tin-based catalysts such as tin(II) 2-ethylhexanoate and dibutyltin laurate; titanium-based catalysts such as titanium(IV) 2-ethylhexanoate; phosphorus-based catalysts such as triphenylphosphine; and chromium-based catalysts such as chromium acetylacetonate and chromium chloride. Among these, phosphorus-based catalysts are preferred when used together with a polysiloxane, in terms of improving the storage stability of the polysiloxane.

[0058] The (meth)acrylic polymer used in the resin composition of the present invention contains a structure represented by the following general formula (4) and a structure represented by the following general formula (5), and may contain other structures.

[0059] [ka]

[0060] (In general formulas (4) and (5), R 3 and R 4 each independently represents hydrogen, a hydroxyl group, or a monovalent organic group having 1 to 30 carbon atoms; X4 represents an organic group having an aromatic ring; Y2 represents an organic group having a photoradical polymerizable group; d and e each independently represent an integer of 1 or more; when d and e are 2 or more, multiple R 3 , R 4 , X4, and Y2 may be the same or different. R 3 or R 4The "monovalent organic group having 1 to 30 carbon atoms" represented by the formula (I) is preferably an alkyl group (including linear and branched alkyl groups) having 1 to 6 carbon atoms. Specific preferred examples of these include a methyl group, an ethyl group, an n-propyl group, and an isopropyl group. The "organic group having an aromatic ring" represented by X4 is preferably an aromatic hydrocarbon group having a carbon number of 6 to 15. Specific preferred examples thereof include a phenyl group, a benzyl group, a styryl group, a naphthyl group, and a biphenyl group. The "organic group having a photoradical polymerizable group" represented by Y2 is preferably an ethylenically unsaturated group, and more preferably a functional group containing a methacrylic group and / or an acrylic group. Specific examples of these include functional groups in which glycidyl methacrylate and / or glycidyl acrylate are added to a carboxylic acid group. d and e each independently represent an integer of 1 or more, d is preferably 10 to 60, more preferably 20 to 50, and e is preferably 5 to 60, more preferably 10 to 50.

[0061] The repeating unit represented by general formula (4) is derived from a (meth)acrylic acid compound and / or a styrene compound containing an organic group having an aromatic ring. By containing an organic group having an aromatic ring, tackless properties can be improved.

[0062] Of all the repeating units in the (meth)acrylic polymer, it is preferable that the repeating units represented by general formula (4) account for 10 to 80 mol %. By containing 10 mol % or more of the repeating units represented by general formula (4), the tackless property of the film after pre-baking can be improved. The content of the repeating units represented by general formula (4) is more preferably 15 mol % or more, and even more preferably 20 mol % or more. On the other hand, by containing 80 mol % or less of the repeating units represented by general formula (4), the degree of hardness of the partition walls can be improved. The content of the repeating units represented by general formula (4) is more preferably 75 mol % or less, and even more preferably 70 mol % or less.

[0063] Examples of (meth)acrylic acid compounds containing an organic group having an aromatic ring include phenyl(meth)acrylate, benzyl(meth)acrylate, tolyl(meth)acrylate, and naphthyl(meth)acrylate. Examples of styrene compounds include p-methylstyrene, o-methylstyrene, m-methylstyrene, and α-methylstyrene. Among these, styrene is preferred. By copolymerizing styrene, the heat resistance and moist heat resistance of the resulting cured film are improved.

[0064] The repeating unit represented by general formula (5) preferably has an ethylenically unsaturated group as a photoradical polymerizable group. By containing an ethylenically unsaturated group as a photoradical polymerizable group, a crosslinking reaction proceeds with radicals generated from a photoradical generator in the exposed area, thereby increasing the degree of cure in the exposed area. Of all the repeating units in the (meth)acrylic polymer, it is preferable that the repeating units represented by general formula (5) account for 10 to 80 mol %. By containing 10 mol % or more of the repeating units represented by general formula (5), radical crosslinking between resins in the film can be efficiently promoted, thereby improving the degree of hardening of the film. The content of the repeating units represented by general formula (5) is more preferably 15 mol % or more, and even more preferably 20 mol % or more. On the other hand, by containing 80 mol % or less of the repeating units represented by general formula (5), excessive radical crosslinking of the (meth)acrylic polymer can be suppressed, and the crack resistance of the partition walls can be improved. The content of the repeating units represented by general formula (5) is more preferably 75 mol % or less, and even more preferably 70 mol % or less.

[0065] Examples of ethylenically unsaturated groups include vinyl groups, allyl groups, acrylic groups, and methacrylic groups. A common method for adding such side chains to an acrylic (co)polymer is to subject a carboxylic acid group of the acrylic (co)polymer to an addition reaction with an ethylenically unsaturated compound having a glycidyl group or (meth)acrylic acid chloride, as described above. Alternatively, a compound having an ethylenically unsaturated group can be added using isocyanate. Examples of the ethylenically unsaturated compound having a glycidyl group, acrylic acid, or methacrylic acid chloride herein include glycidyl (meth)acrylate, α-ethylglycidyl (meth)acrylate, α-n-propylglycidyl (meth)acrylate, α-n-butylglycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, allyl glycidyl ether, vinyl glycidyl ether, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, α-methyl-o-vinyl Examples of the alkyl acrylate copolymer include vinylbenzyl glycidyl ether, α-methyl-m-vinylbenzyl glycidyl ether, α-methyl-p-vinylbenzyl glycidyl ether, 2,3-diglycidyloxymethylstyrene, 2,4-diglycidyloxymethylstyrene, 2,5-diglycidyloxymethylstyrene, 2,6-diglycidyloxymethylstyrene, 2,3,4-triglycidyloxymethylstyrene, 2,3,5-triglycidyloxymethylstyrene, 2,3,6-triglycidyloxymethylstyrene, 3,4,5-triglycidyloxymethylstyrene, 2,4,6-triglycidyloxymethylstyrene, acrylic acid chloride, and methacrylic acid chloride.

[0066] The other repeating units in the (meth)acrylic polymer preferably contain a carboxyl group and / or an acid anhydride group. The presence of a carboxyl group and / or an acid anhydride group increases the solubility contrast between exposed and unexposed areas, improving the resolution at which patterning is possible. Examples of (meth)acrylic compounds containing a carboxyl group and / or an acid anhydride group include (meth)acrylic acid, (meth)acrylic anhydride, itaconic acid, itaconic anhydride, mono(2-acryloyloxyethyl) succinate, mono(2-acryloyloxyethyl) phthalate, and mono(2-acryloyloxyethyl) tetrahydrophthalate. Two or more of these may also be used.

[0067] The (meth)acrylic polymer may not necessarily contain other repeating units, and if it does, the content thereof is preferably 90 mol % or less, more preferably 80 mol % or less, of all repeating units. The weight-average molecular weight (Mw) of the (meth)acrylic polymer is not particularly limited, but is preferably 2,000 to 200,000 in terms of polystyrene as measured by gel permeation chromatography (GPC). By setting the Mw within this range, good coating properties can be obtained, and the solubility of unexposed areas in a developer during pattern formation can also be improved.

[0068] The (meth)acrylic polymer used in the resin composition of the present invention may be synthesized as in the synthesis examples described below, or a commercially available product may be used. Examples of commercially available (meth)acrylic polymers include AX3-BX-TR-101, AX3-BX-TR-102, AX3-BX-TR-106, AX3-BX-TR-107, AX3-BX-TR-108, AX3-BX-TR-109, AX3-BX-TR-110, AX3-RD-TR-501, AX3-RD-TR-502, AX3-RD-TR-503, AX3-RD-TR-504, AX3-RD-TR-103, and AX3-RD-TR-104 (trade names, manufactured by Nippon Shokubai Co., Ltd.), SPCR-10X, SPCR-10P, SPCR-24X, SPCR-18X, and SPCR-215X (trade names, manufactured by Showa Denko K.K.), and X-4007 (trade name, manufactured by NOF Corporation). Among these, SPCR-10X, SPCR-10P, SPCR-24X, SPCR-18X, and SPCR-215X, which have an aromatic group and a photoradical polymerizable group, are preferred. Two or more of these may be used.

[0069] The cardo polymer used in the resin composition of the present invention contains a structure represented by the following general formula (6) or (7) and a photoradical polymerizable group, but may contain other structures.

[0070] [ka]

[0071] (In general formulas (6) and (7), R 5 ~R 7 is hydrogen, a monovalent organic group having 1 to 30 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an adjacent R 5 ~R 7 R represents a group that forms an aromatic ring with other groups. 8 represents hydrogen, a monovalent organic group having 1 to 30 carbon atoms, or an aryl group having 6 to 20 carbon atoms. p, q, and r are integers of 0 to 2, and s is an integer of 1 or 2. f to g each independently represent an integer of 1 or more. When f to g are 2 or more, multiple R 5 , R 6 , R7 , and R 8 may be the same or different.) Here, the "monovalent organic group having 1 to 30 carbon atoms" is preferably an alkyl group having 1 to 6 carbon atoms (including linear and branched alkyl groups). Specific examples of these groups are methyl, ethyl, n-propyl, and isopropyl. Specific examples of these groups are preferably aromatic hydrocarbon groups having 6 to 15 carbon atoms. Specific examples of these groups are phenyl, benzyl, styryl, naphthyl, and biphenyl. Furthermore, from the viewpoint of ease of synthesis, R 5 , R 6 , and R 7 is preferably hydrogen, and R 8 is preferably a phenyl group. f and g each independently represent an integer of 1 or more, f is preferably 2 to 60, more preferably 3 to 50, and e is preferably 2 to 60, more preferably 3 to 50.

[0072] The "photoradical polymerizable group" contained in the cardo polymer is preferably an ethylenically unsaturated group. By containing an ethylenically unsaturated group as the photoradical polymerizable group, a crosslinking reaction proceeds with the radicals generated from the photoradical generator in the exposed area, thereby increasing the degree of hardening of the exposed area. Examples of ethylenically unsaturated groups include vinyl, allyl, styryl, acrylic, and methacrylic groups. Functional groups containing styryl, methacrylic, and acrylic groups are preferred. A preferred example is a functional group in which glycidyl methacrylate and / or glycidyl acrylate is added to a carboxylic acid group.

[0073] The cardo polymer used in the resin composition of the present invention preferably contains an alkali-soluble group as an "other structure." The alkali-soluble group preferably contains a carboxyl group and / or an acid anhydride group. The presence of a carboxyl group and / or an acid anhydride group increases the solubility contrast between exposed and unexposed areas, improving the resolution at which patterning is possible.

[0074] The weight-average molecular weight (Mw) of the cardo polymer is not particularly limited, but is preferably 2,000 to 200,000 in polystyrene equivalent as measured by gel permeation chromatography (GPC) described below. By setting the Mw within this range, good coating properties can be obtained, and the solubility of the unexposed areas in the developer during pattern formation is also good.

[0075] The cardo polymer used in the resin composition of the present invention may be synthesized or may be a commercially available product. Examples of commercially available cardo polymers include "Ogusol" (registered trademark) CR-TR, CR-TR2, CR-TR3, CR-TR4, CR-TR5, and CR-TR6 (all trade names, manufactured by Osaka Gas Chemicals Co., Ltd.), INR-16 (trade name, manufactured by Nagase Chemtec Corporation), V-259ME (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.), and WR-301 (trade name, manufactured by ADEKA Corporation). Among these, V-259ME and WR-301, which contain a structure represented by general formula (6) or (7), a photoradical polymerizable group, and an alkali-soluble group, are preferred. Two or more of these may also be used.

[0076] The resin composition of the present invention preferably contains the aforementioned polysiloxane by weight and the aforementioned (meth)acrylic polymer and cardo polymer by weight in a ratio of 30 / 70 to 70 / 30. This ratio allows for both high heat resistance derived from the polysiloxane and the tacklessness of the film after pre-baking derived from the (meth)acrylic polymer and / or cardo polymer. The ratio of the polysiloxane by weight to the total weight of the (meth)acrylic polymer and cardo polymer is more preferably 35 / 65 to 65 / 35, and even more preferably 40 / 60 to 60 / 40.

[0077] The (meth)acrylic polymer and / or cardo polymer preferably has a glass transition temperature of 60°C or higher. A high glass transition temperature can improve the tackiness of the film after pre-baking. A glass transition temperature of 65°C or higher is more preferable. The glass transition temperature can be measured as described in the Examples below.

[0078] The resin composition of the present invention preferably further contains a white pigment. The white pigment has the function of further improving the reflectance of the partition walls. Examples of white pigments include titanium dioxide, zirconium oxide, zinc oxide, barium sulfate, and composite compounds thereof. Two or more of these may be contained. Among these, titanium dioxide is preferred because it has high reflectance and is easily used industrially. The crystal structure of titanium dioxide is classified into anatase type, rutile type, and brookite type. Among these, rutile type titanium oxide is preferred because it has low photocatalytic activity.

[0079] The white pigment may be surface-treated. Surface treatment with a metal oxide containing a metal selected from Al, Si, and Zr is preferred, as this can improve the light resistance and heat resistance of the partition walls formed. The average primary particle size of the white pigment is preferably 100 to 500 nm, more preferably 150 to 350 nm, from the viewpoint of further improving the reflectance of the partition walls. Here, the average primary particle size of the white pigment can be measured by laser diffraction using a particle size distribution analyzer (N4-PLUS; manufactured by Beckman Coulter, Inc.) or the like.

[0080] Examples of titanium dioxide pigments that are preferably used as white pigments include R960 manufactured by DuPont (rutile type, SiO / AlO treatment, average primary particle size 210 nm) and CR-97 manufactured by Ishihara Sangyo Kaisha (rutile type, AlO / ZrO treatment, average primary particle size 250 nm). Two or more of these may be contained. From the viewpoint of further improving reflectance, the content of the white pigment in the resin composition is preferably 10% by weight or more of the solid content, and more preferably 15% by weight or more. On the other hand, from the viewpoint of improving the surface smoothness of the partition walls, the content of the white pigment is preferably 60% by weight or less of the solid content, and more preferably 55% by weight or less.

[0081] The resin composition of the present invention preferably further contains a light-shielding pigment and / or an organometallic compound containing at least one metal selected from the group consisting of silver, gold, platinum, and palladium (hereinafter sometimes referred to as "organometallic compound"). The light-shielding pigment and organometallic compound have the function of further improving the light-shielding properties of the partition walls.

[0082] From the viewpoint of improving light-shielding properties, the light-shielding pigment preferably contains a black pigment. Examples of black pigments include black organic pigments, mixed-color organic pigments, and black inorganic pigments. Examples of black organic pigments include carbon black, perylene black, aniline black, and benzofuranone pigments. These may be coated with a resin.

[0083] Examples of mixed-color organic pigments include those obtained by mixing two or more pigments selected from red, blue, green, purple, yellow, magenta, and cyan to produce a pseudo-black color. Among these, a mixed pigment of a red pigment and a blue pigment is preferred from the viewpoint of achieving both a moderately high OD value and pattern processability. The weight ratio of the red pigment to the blue pigment in the mixed pigment is preferably 20 / 80 to 80 / 20, more preferably 30 / 70 to 70 / 30. Specific examples of representative pigments, expressed by Color Index (CI) numbers, include the following: Examples of red pigments include Pigment Red (hereinafter abbreviated as PR) 9, PR177, PR215, and PR254. Two or more of these may be contained. Examples of blue pigments include Pigment Blue (hereinafter abbreviated as PB) 15, PB15:4, and PB15:6. Two or more of these may be contained.

[0084] Examples of black inorganic pigments include graphite, fine particles of metals such as titanium, copper, iron, manganese, cobalt, chromium, nickel, zinc, calcium, silver, gold, platinum, and palladium, metal oxides, metal composite oxides, metal sulfides, metal nitrides, metal oxynitrides, and metal carbides. Two or more of these may be contained. Among the above black pigments, pigments selected from titanium nitride, zirconium nitride, carbon black, and mixed pigments of red pigment and blue pigment in a weight ratio of 20 / 80 to 80 / 20 are preferred because they have high light-shielding properties.

[0085] The content of the light-shielding pigment in the resin composition is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, of the solid content from the viewpoint of improving the light-shielding property, while the content of the light-shielding pigment is preferably 5% by weight or less, more preferably 3% by weight or less, of the solid content from the viewpoint of stably forming a fine thick film barrier rib pattern. Furthermore, the resin composition of the present invention may contain other light-shielding pigments in addition to the black pigment in order to improve the light-shielding properties for specific wavelengths. Examples of other light-shielding pigments include red pigments, blue pigments, purple pigments, green pigments, and yellow pigments. Two or more of these pigments may be contained.

[0086] During the pattern formation of the partition walls (A-1) described below, the organometallic compound decomposes and aggregates to form black or yellow particles in the exposure step and / or heating step, thereby improving the light-blocking properties (OD value) of the partition walls (A-1) described below. Because the OD value is low before exposure and increases after pattern formation, the exposure light can be sufficiently transmitted to the bottom in the exposure step to photocure or photodecompose the partition walls (A-1). If a pattern is formed using a resin composition containing a large amount of a light-blocking pigment in advance in order to form partition walls (A-1) with a high OD value, photocuring at the bottom tends to be insufficient. As a result, the resulting partition walls (A-1) tend to have an inverted tapered shape. When a pattern is formed using the resin composition of the present invention containing the aforementioned organometallic compound, photocuring is sufficient all the way to the bottom, making it easy to achieve a taper angle within the preferred range described below.

[0087] Examples of organometallic compounds include silver-containing organometallic compounds such as silver neodecanoate, silver octoate, and silver salicylate; gold-containing organometallic compounds such as chloro(triphenylphosphine)gold; platinum-containing organometallic compounds such as bis(acetylacetonato)platinum and dichlorobis(triphenylphosphine)platinum; and palladium-containing organometallic compounds such as bis(acetylacetonato)palladium and dichlorobis(triphenylphosphine)palladium. Two or more of these may be contained.

[0088] Among these, when an organometallic compound containing silver such as silver neodecanoate, silver octoate, or silver salicylate is included, it decomposes and aggregates during the exposure and / or heating process, generating nanosilver particles and turning the ink yellow.

[0089] On the other hand, when an organometallic compound containing platinum such as bis(acetylacetonato)platinum or an organometallic compound containing palladium such as bis(acetylacetonato)palladium is used, the compound decomposes and aggregates during the exposure step and / or heating step to produce palladium oxide, resulting in blackening. Among these, silver neodecanoate and bis(acetylacetonato)palladium are preferred from the viewpoint of further improving the OD value.

[0090] In the resin composition of the present invention, the content of the organometallic compound in the solid content is preferably 0.2 to 5 wt %. By setting the content of the organometallic compound to 0.2 wt % or more, the OD value of the resulting partition walls can be further improved. The content of the organometallic compound is more preferably 0.5 wt % or more. On the other hand, by setting the content of the organometallic compound to 5 wt % or less, the reflectance can be further improved.

[0091] The resin composition of the present invention preferably further contains a coordinating compound having a phosphorus atom (hereinafter, may be referred to as "coordinating compound"). The coordinating compound coordinates to the organometallic compound in the resin composition, improves the solubility of the organometallic compound in a solvent, promotes decomposition of the organometallic compound, and can further improve the OD value of the resulting partition walls. Examples of the coordinating compound include triphenylphosphine, tri-t-butylphosphine, trimethylphosphine, tricyclohexylphosphine, and tris(o-tolyl)phosphine. Two or more of these may be contained. The content of the coordinating compound in the resin composition of the present invention is preferably 0.5 to 3.0 molar equivalents relative to the organometallic compound.

[0092] The resin composition of the present invention preferably further contains a photopolymerizable compound. The photopolymerizable compound in the present invention refers to a compound having two or more ethylenically unsaturated double bonds in the molecule. By containing the photopolymerizable compound, a radical crosslinking reaction occurs with the (meth)acrylic group in the resin, and the degree of hardening of the film can be improved. In consideration of ease of radical polymerization, the photopolymerizable compound preferably contains a (meth)acrylic group.

[0093] Examples of photopolymerizable compounds include 1,6-hexanediol diacrylate, 1,9-nonanediol dimethacrylate, 1,10-decanediol dimethacrylate, dimethylol-tricyclodecane diacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, tripentaerythritol heptaacrylate, tripentaerythritol octaacrylate, tetrapentaerythritol nonaacrylate, tetrapentaerythritol decaacrylate, tripentaerythritol heptamethacrylate, tripentaerythritol octamethacrylate, tetrapentaerythritol nonamethacrylate, and tetrapentaerythritol decamethacrylate. Two or more of these may be contained.

[0094] The content of the photopolymerizable compound in the resin composition of the present invention is preferably 1 wt % or more of the solid content from the viewpoint of effectively promoting radical curing, while the content of the photopolymerizable compound is preferably 50 wt % or less of the solid content from the viewpoint of suppressing excessive radical reaction and improving resolution.

[0095] The resin composition of the present invention preferably contains a liquid-repellent compound having a photopolymerizable group. The liquid-repellent compound is a compound that imparts to the resin composition the property of repelling water and organic solvents (liquid-repellent performance). There are no particular limitations on the compound as long as it has such a property, but specifically, compounds having a fluoroalkyl group are preferably used. By containing the liquid-repellent compound, liquid-repellent performance can be imparted to the top of the partition wall (A-1) described below after formation. This makes it possible, for example, to easily apply color-converting luminescent materials of different compositions to each pixel when forming pixels containing the color-converting luminescent material (B) described below.

[0096] The liquid-repellent compound refers to a compound having a fluoroalkyl or fluoroalkylene group at the end, main chain, and / or side chain. The liquid-repellent compound contained in the resin composition of the present invention is preferably a liquid-repellent compound having a photopolymerizable group, since it can form a strong bond with the resin. Examples of liquid-repellent compounds having a photopolymerizable group include "Megafac" (registered trademark) RS-72-A, RS-75-A, RS-56, and RS-90 (all trade names, manufactured by DIC Corporation). In this case, the photopolymerizable group may be photopolymerized in the partition wall (A-1) made of a photocured product of the negative-type photosensitive resin composition.

[0097] From the viewpoint of improving the liquid repellency of the partition walls and improving inkjet coating properties, the content of the liquid repellent compound in the resin composition is preferably 0.01 wt % or more, more preferably 0.1 wt % or more, based on the solid content. On the other hand, from the viewpoint of improving compatibility with the resin and the white pigment, the content of the liquid repellent compound is preferably 10 wt % or less, more preferably 5 wt % or less, based on the solid content.

[0098] The resin composition of the present invention may also contain a surfactant, an adhesion improver, etc., as necessary. By including a surfactant in the resin composition of the present invention, flowability during application can be improved. Examples of surfactants include fluorine-based surfactants such as "Megafac" (registered trademark) F445, F470, F475, and F477 (all trade names, manufactured by DIC Corporation), NBX-15, and FTX-218 (all trade names, manufactured by Neos Corporation); silicone-based surfactants such as "BYK" (registered trademark)-333, 352, and 301 (all trade names, manufactured by BYK Japan KK); polyalkylene oxide-based surfactants; and poly(meth)acrylate-based surfactants. Two or more of these surfactants may be included.

[0099] By including an adhesion improver in the resin composition of the present invention, adhesion to the base substrate is improved, resulting in a highly reliable partition wall. Examples of adhesion improvers include alicyclic epoxy compounds and silane coupling agents. Among these, alicyclic epoxy compounds are preferred from the viewpoint of heat resistance. Examples of alicyclic epoxy compounds include 3',4'-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, 1,2-epoxy-4-(2-oxiranyl)cyclohexane adduct of 2,2-bis(hydroxymethyl)-1-butanol, ε-caprolactone-modified 3',4'-epoxycyclohexylmethyl 3',4'-epoxycyclohexanecarboxylate, 1,2-epoxy-4-vinylcyclohexane, butanetetracarboxylic acid tetra(3,4-epoxycyclohexylmethyl)-modified ε-caprolactone, 3,4-epoxycyclohexylmethyl methacrylate, 1,4-cyclohexanedicarboxylate diglycidyl, and 1,4-cyclohexanedimethanol diglycidyl ether. Two or more of these may be contained.

[0100] The content of the adhesion promoter in the resin composition of the present invention is preferably 0.1 wt % or more, more preferably 1 wt % or more, of the solid content from the viewpoint of further improving adhesion to the base substrate, while the content of the adhesion promoter is preferably 20 wt % or less, more preferably 10 wt % or less, of the solid content from the viewpoint of pattern processability.

[0101] The resin composition of the present invention preferably further contains a solvent. The solvent adjusts the viscosity of the resin composition to a range suitable for application and improves the uniformity of the partition walls. A preferred solvent is a combination of a solvent having a boiling point of more than 150°C and not more than 250°C at atmospheric pressure and a solvent having a boiling point of 150°C or less. Examples of solvents include alcohols such as isopropanol and diacetone alcohol; glycols such as ethylene glycol and propylene glycol; ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, and propylene glycol monoethyl ether; ketones such as methyl ethyl ketone, methyl isobutyl ketone, diisobutyl ketone, and cyclopentanone; amides such as dimethylformamide and dimethylacetamide; and acetates such as propylene glycol monomethyl ether acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl lactate, ethyl lactate, and butyl lactate. Two or more of these may be contained. Among these, from the viewpoint of coatability, it is preferable to combine diacetone alcohol as a solvent having a boiling point of more than 150° C. and not more than 250° C. under atmospheric pressure with propylene glycol monomethyl ether as a solvent having a boiling point of 150° C. or less.

[0102] The content of the solvent can be set arbitrarily depending on the application method, etc. For example, when forming a film by spin coating, the content of the solvent in the resin composition is generally 50% by weight or more and 95% by weight or less.

[0103] The resin composition of the present invention can be produced, for example, by mixing the above-mentioned photoradical generator, polysiloxane, (meth)acrylic polymer and / or cardo polymer, and, if necessary, other components. Next, the light-shielding film of the present invention will be described. The light-shielding film of the present invention is obtained by curing the resin composition of the present invention described above. The light-shielding film of the present invention can be suitably used as a light-shielding pattern in an OGS-type touch panel, such as a decorative pattern for a cover substrate, in addition to the partition wall (A-1) described below. The film thickness of the light-shielding film is preferably 10 μm or more. Next, the method for producing the light-shielding film of the present invention will be described with reference to examples. The method for producing the light-shielding film of the present invention preferably includes a film-forming step of applying the resin composition of the present invention onto a base substrate and drying the composition to obtain a dried film, an exposure step of patternwise exposing the obtained dried film, a development step of dissolving and removing a portion of the exposed dried film that is soluble in a developer, and a heating step of heating the developed dried film to cure it.

[0104] Examples of the method for applying the resin composition in the film-forming step include slit coating and spin coating. Examples of the drying device include a hot air oven and a hot plate. The drying time is preferably 80 to 120°C, and the drying time is preferably 1 to 15 minutes. The exposure step is a step of photocuring a necessary portion of the dry film by exposure or photodecomposing an unnecessary portion of the dry film to make any portion of the dry film soluble in a developer. In the exposure step, exposure may be performed through a photomask having predetermined openings, or any desired pattern may be directly drawn using laser light or the like without using a photomask. The exposure device may be, for example, a proximity exposure device. The actinic rays irradiated in the exposure step are preferably ultraviolet rays. The light source may be, for example, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, or a halogen lamp, with an ultra-high-pressure mercury lamp being preferred. The exposure conditions can be appropriately selected depending on the thickness of the dried film to be exposed. Generally, the exposure intensity is 1 to 100 mW / cm. 2 Using an ultra-high pressure mercury lamp with an output of 1 to 10,000 mJ / cm 2 It is preferable to expose the film with an exposure amount of 1000 ppm or more.

[0105] The development step is a step in which developer-soluble portions of the dried film after exposure are dissolved and removed with the developer to obtain a dried film patterned in any pattern shape (hereinafter referred to as a pre-heating pattern) in which only developer-insoluble portions remain. Examples of the pattern shape include a lattice shape, a stripe shape, and a hole shape. Examples of the development method include a dipping method, a spray method, and a brush method.

[0106] The developer can be selected from a solvent capable of dissolving unnecessary portions of the dried film after exposure, and an aqueous solution containing water as the main component is preferred. For example, when the resin composition contains a polymer having a carboxyl group, an alkaline aqueous solution is preferred. Examples of alkaline aqueous solutions include inorganic alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, sodium carbonate, and calcium hydroxide; and organic alkaline aqueous solutions such as tetramethylammonium hydroxide. Among these, an aqueous potassium hydroxide solution or an aqueous tetramethylammonium hydroxide solution is preferred from the viewpoint of improving resolution. Furthermore, a surfactant may be added to the developer from the viewpoint of improving resolution. The development temperature is preferably 20 to 50°C to facilitate process control. The heating step is a step of heat-curing the pre-heated pattern formed in the development step. Examples of heating devices include a hot plate and an oven. The heating temperature is preferably 250°C or less from the viewpoint of suppressing cracking in the heated film. The heating time is preferably 15 minutes to 2 hours. When the resin composition of the present invention contains the aforementioned organometallic compound, the heating temperature is preferably 150°C or higher from the viewpoint of further improving the OD value.

[0107] Next, the partition-equipped substrate of the present invention will be described. The partition-equipped substrate of the present invention has partitions (hereinafter sometimes referred to as "partitions (A-1)") patterned (A-1) on a base substrate. The base substrate functions as a support for the partition-equipped substrate. When the partitions have pixels containing a color-converting luminescent material described below, the partitions have the function of suppressing color mixing of light between adjacent pixels.

[0108] In the partition-formed substrate of the present invention, the partitions (A-1) preferably have a reflectance per 10 μm of thickness at a wavelength of 550 nm of 10% to 60% and an OD value per 10 μm of thickness at a wavelength of 450 nm of 1.0 to 3.0. By setting the reflectance to 10% or more and the OD value to 3.0 or less, the brightness of the display device can be improved by utilizing the reflection on the side surface of the partitions (A-1). On the other hand, by setting the reflectance at a wavelength of 550 nm to 60% or less and the OD value at a wavelength of 450 nm to 1.0 or more, light transmitted through the partitions (A-1) can be suppressed, thereby suppressing color mixing of light between adjacent pixels.

[0109] 1 shows a cross-sectional view of one embodiment of the substrate with partition walls of the present invention, which has partition walls formed in a pattern. 2 is formed on a base substrate 1 .

[0110] <Base substrate> Examples of the base substrate include a glass plate, a resin plate, and a resin film. The glass plate is preferably made of alkali-free glass. The resin plate and the resin film are preferably made of polyester, (meth)acrylic polymer, transparent polyimide, polyethersulfone, and the like. The thickness of the glass plate and the resin plate is preferably 1 mm or less, and more preferably 0.8 mm or less. The thickness of the resin film is preferably 100 μm or less.

[0111] <Bulkhead (A-1)> The partition walls (A-1) preferably have a reflectance of 10% to 60% per 10 μm thickness at a wavelength of 550 nm and an OD value of 1.0 to 3.0 per 10 μm thickness at a wavelength of 450 nm. Here, the thickness of the partition walls (A-1) refers to the height and / or width of the partition walls (A-1). The height of the partition walls (A-1) refers to the length of the partition walls (A-1) in a direction perpendicular to the base substrate (height direction). In the case of the substrate with partition walls shown in FIG. 1, the height of the partition walls 2 is represented by the symbol H. Furthermore, the width of the partition walls (A-1) refers to the length of the partition walls (A-1) in a direction parallel to the base substrate. In the case of the substrate with partition walls shown in FIG. 1, the width of the partition walls 2 is represented by the symbol L. In this specification, "height" may also be referred to as "thickness."

[0112] In the present invention, it is believed that the reflectance at the side surface of the partition wall contributes to improving the brightness of the display device, and the light-blocking property contributes to suppressing color mixing. On the other hand, since the reflectance and OD value per thickness are believed to be the same regardless of the height or width, the present invention focuses on the reflectance and OD value per thickness of the partition wall. As described below, the thickness (height) of the partition wall (A-1) is preferably 0.5 to 100 μm, and the width is preferably 1 to 100 μm. Therefore, in the present invention, 10 μm was selected as a representative thickness of the partition wall (A-1), and the reflectance and OD value per 10 μm thickness were focused on. If the reflectance per 10 μm thickness of the partition wall (A-1) at a wavelength of 550 nm is less than 10%, visible light reflection at the side surface of the partition wall is reduced, resulting in insufficient brightness of the display device. The reflectance per 10 μm thickness at a wavelength of 550 nm is preferably 10% or more, more preferably 20% or more, and even more preferably 30% or more.

[0113] The OD value per 10 μm of thickness of the partition wall (A-1) at a wavelength of 450 nm is preferably 1.0 or more, more preferably 1.5 or more, and even more preferably 2.0 or more. The higher the OD value per 10 μm of thickness at a wavelength of 450 nm, the greater the light-blocking properties of the partition wall side surface, thereby preventing color mixing between adjacent pixels and improving the contrast of the display device. If the OD value per 10 μm of thickness of the partition wall (A-1) at a wavelength of 450 nm is less than 1.0, blue excitation light leaks to adjacent pixels, causing light emission within the pixels when the partition wall contains a color-converting luminescent material (B) described below, resulting in color mixing.

[0114] The reflectance per 10 μm of the partition walls (A-1) at a wavelength of 550 nm can be measured from the top surface of the 10 μm-thick partition walls (A-1) using a spectrophotometer (e.g., a CM-2600d manufactured by Konica Minolta, Inc.) in SCI mode. However, if an area sufficient for measurement cannot be secured or a 10 μm-thick measurement sample cannot be obtained, and the composition of the partition walls (A-1) is known, a 10 μm-thick solid film with the same composition as the partition walls (A-1) can be prepared and the reflectance of the solid film can be measured in the same manner as for the partition walls (A-1) to determine the reflectance per 10 μm of the thickness. For example, a solid film can be prepared using the same material as the partition walls (A-1) to a thickness of 10 μm under the same processing conditions as for the formation of the partition walls (A-1), except that no patterning is performed, and the reflectance of the resulting solid film can be measured from the top surface in the same manner.

[0115] The OD value per 10 μm thickness of the partition walls (A-1) at a wavelength of 450 nm can be calculated by measuring the intensity of incident light and transmitted light from the top surface of the 10 μm thick partition walls (A-1) using an optical densitometer (for example, U-4100 manufactured by Hitachi High-Tech Science) and using the following formula (1): However, if an area sufficient for measurement cannot be secured or a 10 μm thick measurement sample cannot be obtained and the composition of the partition walls (A-1) is known, the OD value per 10 μm thickness may be determined by preparing a 10 μm thick solid film with the same composition as the partition walls (A-1) and measuring the OD value of the solid film in place of the partition walls (A-1) in the same manner as in the reflectance measurement. OD value = log10(I0 / I) (1) I0: Incident light intensity I: transmitted light intensity.

[0116] The reflectance and OD value can be adjusted to fall within the above ranges by, for example, making the partition walls (A-1) have a preferred composition as described below.

[0117] The taper angle of the partition wall (A-1) is preferably 45° to 110°. The taper angle of the partition wall (A-1) refers to the angle between the side edge and the bottom edge of the partition wall cross section. In the case of the partition wall-equipped substrate shown in FIG. 1, the taper angle of the partition wall 2 is represented by the symbol θ. By setting the taper angle to 45° or more, the difference in width between the top and bottom of the partition wall (A-1) is reduced, and the width of the partition wall (A-1) can be easily formed within the preferred range described below. The taper angle is more preferably 70° or more. On the other hand, by setting the taper angle to 110° or less, ink breakage can be suppressed when forming pixels containing the color-converting luminescent material (B) described below by inkjet coating, thereby improving inkjet coating properties. Here, ink breakage refers to the phenomenon in which ink overcomes the partition wall and mixes into adjacent pixel portions. The taper angle is more preferably 95° or less. The taper angle of the partition wall (A-1) can be determined by observing an arbitrary cross section of the partition wall (A-1) using an optical microscope (FE-SEM (e.g., S-4800 manufactured by Hitachi, Ltd.)) at an acceleration voltage of 3.0 kV and a magnification of 2,500 times, and measuring the angle between the side edge and the bottom edge of the cross section of the partition wall (A-1).

[0118] Note that, examples of means for setting the taper angle of the partition walls (A-1) within the above range include making the partition walls (A-1) have a preferred composition described below, and forming the partition walls (A-1) using the above-mentioned resin composition of the present invention.

[0119] When the partition-attached substrate has pixels containing the color-converting luminescent material (B) described below, the thickness of the partition wall (A-1) is preferably larger than the thickness of the pixels. Specifically, the thickness of the partition wall (A-1) is preferably 0.5 μm or more, more preferably 10 μm or more. On the other hand, from the viewpoint of more efficiently extracting light emitted from the bottom of the pixels, the thickness of the partition wall (A-1) is preferably 100 μm or less, more preferably 50 μm or less. Furthermore, the width of the partition wall (A-1) is preferably sufficient to further improve brightness by utilizing light reflection on the side surface of the partition wall and to further suppress color mixing of light in adjacent pixels due to light leakage. Specifically, the width of the partition wall is preferably 1 μm or more, more preferably 5 μm or more. On the other hand, from the viewpoint of securing a large light-emitting region of the pixel and further improving brightness, the width of the partition wall (A-1) is preferably 100 μm or less, more preferably 50 μm or less.

[0120] The partition (A-1) has a repeating pattern of a predetermined number of pixels according to the screen size of the image display device. The number of pixels of the image display device can be, for example, 4000 horizontally and 2000 vertically. The number of pixels affects the resolution (fineness) of the displayed image. Therefore, it is necessary to form a number of pixels according to the required image resolution and the screen size of the image display device, and it is preferable to determine the pattern formation dimensions of the partition according to this.

[0121] The partition walls (A-1) preferably contain a resin, a white pigment, and a light-shielding pigment. The resin has the function of improving the crack resistance and light fastness of the partition walls. The white pigment has the function of further improving the reflectance of the partition walls. The light-shielding pigment has the function of adjusting the OD value and suppressing color mixing of light in adjacent pixels.

[0122] The resin, white pigment, and light-blocking pigment are as described above as materials constituting the resin composition. From the viewpoint of improving light-blocking properties, the light-blocking pigment preferably contains at least one pigment selected from black pigment, red pigment, blue pigment, purple pigment, and yellow pigment. Among these, from the viewpoint of suppressing color mixing of light in adjacent pixels, it is preferable to contain a black pigment and / or a yellow pigment. The black pigment is as described above as a material constituting the resin composition. Examples of yellow pigments include organic yellow pigments such as pigment yellow (hereinafter abbreviated as PY) PY137, PY138, PY139, PY150, PY166, PY168, and PY185, and inorganic yellow pigments such as metal fine particles such as nanosilver particles and nanogold particles; metal oxides; metal composite oxides; metal sulfides; metal nitrides; metal oxynitrides; and metal carbides. Among these, from the viewpoint of suppressing color mixing of light in adjacent pixels, it is preferable that the light-shielding pigment contains at least one pigment selected from titanium nitride, zirconium nitride, carbon black, a mixed pigment of a red pigment and a blue pigment in a weight ratio of 20 / 80 to 80 / 20, and particles of at least one metal oxide or metal selected from the group consisting of palladium oxide, platinum oxide, gold oxide, silver oxide, palladium, platinum, gold, and silver.

[0123] The partition walls (A-1) preferably further contain a hindered amine compound. By containing a hindered amine compound, the weather resistance of the partition walls can be improved. The partition walls (A-1) are as described above as materials constituting the resin composition. The hindered amine compound may be immobilized to the resin by reaction of a photopolymerizable group in the molecule. The content of the hindered amine compound in the partition walls (A-1) is preferably 0.005% by weight or more, more preferably 0.008% by weight or more, from the viewpoint of further improving weather resistance, while the content of the hindered amine compound in the partition walls (A-1) is preferably 5.0% by weight or less, more preferably 3.0% by weight or less, from the viewpoint of improving the surface hardening property of the partition walls. The partition wall (A-1) preferably further contains a liquid-repellent compound. By containing the liquid-repellent compound, the partition wall (A-1) can be imparted with liquid-repellent properties, and for example, when forming pixels containing the color-converting luminescent material (B) described below, it is possible to easily apply color-converting luminescent materials of different compositions to the respective pixels. The liquid-repellent compound is as described above as a material constituting the resin composition.

[0124] The surface contact angle of the partition walls (A-1) with propylene glycol monomethyl ether acetate is preferably 10° or more, more preferably 20° or more, and even more preferably 40° or more, from the viewpoints of improving inkjet coating properties and facilitating separate application of the color-converting luminescent material. On the other hand, from the viewpoint of improving adhesion between the partition walls and the base substrate, the surface contact angle of the partition walls (A-1) is preferably 70° or less, more preferably 60° or less. Here, the surface contact angle of the partition walls (A-1) can be measured in accordance with the wettability test method for substrate glass surfaces specified in JIS R3257 (established on April 20, 1999) for the upper part of the partition walls. Incidentally, examples of methods for adjusting the surface contact angle of the partition walls (A-1) to the above range include a method using the aforementioned liquid-repellent compound.

[0125] The photosensitive paste method is preferred as a method for forming a pattern of partition walls (A-1) on a base substrate because it is easy to adjust the pattern shape. A preferred method for forming a pattern of partition walls using the photosensitive paste method includes, for example, a coating step of applying the above-mentioned resin composition to a base substrate and drying it to obtain a dried film, an exposure step of pattern-exposing the resulting dried film according to the desired pattern shape, a development step of dissolving and removing the developer-soluble portion of the exposed dried film, and a heating step of curing the developed partition walls. The resin composition preferably has negative photosensitivity. The pattern exposure may be performed through a photomask having predetermined openings, or any desired pattern may be directly drawn using laser light or the like without using a photomask. When the partition-wall-attached substrate has color filters and / or light-shielding partition walls (A-2) described below, the partition walls (A-1) can be pattern-formed on the color filters and / or light-shielding partition walls (A-2) in the same manner. Each step is as described above in the method for producing a light-shielding film.

[0126] The partition-equipped substrate of the present invention preferably further comprises pixels (hereinafter sometimes referred to as "pixels (B)") containing a color-converting luminescent material (B) arranged and separated by the partitions (A-1). The pixels (B) have the function of converting at least a part of the wavelength range of incident light and emitting output light in a wavelength range different from that of the incident light, thereby enabling color display.

[0127] 2 shows a cross-sectional view of one embodiment of the partition-attached substrate of the present invention, which has patterned partitions (A-1) and pixels (B). Patterned partitions 2 are provided on a base substrate 1, and pixels 3 are arranged in areas separated by the partitions 2. The color conversion material preferably contains a phosphor selected from inorganic and organic phosphors.

[0128] The partition-equipped substrate of the present invention can be used as a display device, for example, by combining a backlight that emits blue light with a liquid crystal formed on a TFT and pixels (B). In this case, the region corresponding to the red pixel preferably contains a red phosphor that is excited by blue excitation light to emit red fluorescence. Similarly, the region corresponding to the green pixel preferably contains a green phosphor that is excited by blue excitation light to emit green fluorescence. The region corresponding to the blue pixel preferably does not contain a phosphor.

[0129] The inorganic phosphor is preferably one that emits colors such as green and red when excited by blue excitation light, i.e., one that is excited by excitation light with a wavelength of 400 to 500 nm and has an emission spectrum with a peak in the range of 500 to 700 nm. Examples of such inorganic phosphors include YAG phosphors, TAG phosphors, sialon phosphors, Mn 4+ Examples of such phosphors include activated fluoride complex phosphors and inorganic semiconductors known as quantum dots. Among these, quantum dots are preferred. Quantum dots have a smaller average particle size than other phosphors, and therefore can smooth the surface of the pixel (B) and suppress light scattering on the surface, thereby further improving the light extraction efficiency and brightness.

[0130] Examples of quantum dot materials include semiconductors of Group II-IV, Group III-V, Group IV-VI, and Group IV. Examples of inorganic semiconductors include Si, Ge, Sn, Se, Te, B, C (including diamond), P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdSe. Two or more of these may be used.

[0131] As the organic fluorescent material, one that emits various colors such as green and red when excited by blue light is preferred. Phosphors that emit red fluorescence include pyrromethene derivatives having a basic skeleton represented by the following structural formula (11), and phosphors that emit green fluorescence include pyrromethene derivatives having a basic skeleton represented by the following structural formula (12). Other examples include perylene-based derivatives, porphyrin-based derivatives, oxazine-based derivatives, and pyrazine-based derivatives that emit red or green fluorescence depending on the selection of substituents. Two or more of these may be contained. Among these, pyrromethene derivatives are preferred due to their high quantum yield. Pyrromethene derivatives can be obtained, for example, by the method described in JP 2011-241160 A.

[0132] [ka]

[0133] Since the organic phosphor is soluble in a solvent, pixels (B) of a desired thickness can be easily formed. From the viewpoint of improving color characteristics, the thickness of the pixels (B) is preferably 0.5 μm or more, and more preferably 1 μm or more. On the other hand, from the viewpoint of thinning the display device and curved surface processability, the thickness of the pixels (B) is preferably 30 μm or less, and more preferably 20 μm or less. The size of each pixel (B) is generally about 20 to 200 μm. The pixels (B) are preferably arranged so as to be separated by partition walls (A-1). By providing partition walls between the pixels, it is possible to further suppress the diffusion and color mixing of emitted light. The pixel (B) may be formed, for example, by filling a coating liquid containing a color-converting luminescent material (hereinafter referred to as a color-converting luminescent material coating liquid) into the spaces separated by the partition walls (A-1). The color-converting luminescent material coating liquid may further contain a resin and a solvent.

[0134] Examples of methods for filling the color-converting luminescent material coating liquid include photolithography and inkjet coating. From the viewpoint of easily applying different types of color-converting luminescent materials to each pixel, inkjet coating is preferred.

[0135] <Shading bulkhead (A-2)> The partition-formed substrate of the present invention preferably further comprises, between the base substrate and the patterned partition (A-1), patterned partition (A-2) having an OD value of 0.5 or more per 1.0 μm of thickness (hereinafter, sometimes referred to as "light-shielding partition (A-2)"). The presence of the light-shielding partition (A-2) improves light-shielding properties, suppresses backlight light leakage in a display device, and enables the production of high-contrast, clear images.

[0136] 3 is a cross-sectional view showing one embodiment of a substrate with partition walls of the present invention having light-shielding partition walls. Patterned partition walls 2 and light-shielding partition walls 4 are formed on a base substrate 1, and pixels 3 are arranged in areas separated by the partition walls 2 and the light-shielding partition walls 4.

[0137] The light-shielding partition wall (A-2) has an OD value of 0.5 or more per 1.0 μm of thickness. Here, the thickness of the light-shielding partition wall (A-2) is preferably 0.5 to 10 μm, as described below. In the present invention, 1.0 μm was selected as a representative value of the thickness of the light-shielding partition wall (A-2), and attention was focused on the OD value per 1.0 μm of thickness. By setting the OD value per 1.0 μm of thickness to 0.5 or more, the light-shielding property can be further improved, and a clearer image with higher contrast can be obtained. On the other hand, the OD value per 1.0 μm of thickness is preferably 4.0 or less, which can improve pattern processability. The OD value of the light-shielding partition wall (A-2) can be measured in the same manner as the OD value of the partition wall (A-1) described above.

[0138] The thickness of the light-shielding partition wall (A-2) is preferably 0.5 μm or more, more preferably 1.0 μm or more, from the viewpoint of improving light-shielding properties. On the other hand, the thickness of the light-shielding partition wall (A-2) is more preferably 5 μm or less, from the viewpoint of improving flatness. In addition, the width of the light-shielding partition wall (A-2) is preferably about the same as that of the above-mentioned partition wall (A-1).

[0139] The light-shielding partition walls (A-2) preferably contain a resin and a light-shielding pigment. The resin has the function of improving the crack resistance and light resistance of the partition walls. The light-shielding pigment has the function of absorbing incident light and reducing emitted light. The resin and the light-shielding pigment can be the same materials as those described above as materials constituting the resin composition.

[0140] A preferred method for patterning the light-shielding partition wall (A-2) on the base substrate is, for example, to form a pattern by a photosensitive paste method using a photosensitive material described in JP-A-2015-1654, similar to the above-mentioned partition wall (A-1).

[0141] Furthermore, the partition-wall-equipped substrate of the present invention preferably further comprises a color filter (hereinafter sometimes referred to as "color filter") having a thickness of 1 to 5 μm between the base substrate and the pixel (B). The color filter has the function of transmitting visible light in a specific wavelength range and changing the transmitted light to a desired hue, thereby improving the color purity of the display device. By making the color filter thickness 1 μm or more, the color purity can be further improved. On the other hand, by making the thickness 5 μm or less, the brightness can be further improved.

[0142] 4 shows a cross-sectional view of one embodiment of the partition-formed substrate having a color filter of the present invention. Patterned partitions 2 and color filters 5 are formed on a base substrate 1, and pixels 3 are formed on the color filters 5.

[0143] Examples of color filters include color filters that use a pigment dispersion material in which a pigment is dispersed in a photoresist, which are used in flat panel displays such as liquid crystal displays. The color filter may be laminated separately from or integrally with the pixel (B) containing the color-converting luminescent material.

[0144] The partition-equipped substrate of the present invention preferably further comprises a 1-5 μm-thick color filter separated by a light-shielding partition between the base substrate and the pixel (B). Figure 5 shows a cross-sectional view of one embodiment of the partition-equipped substrate of the present invention having color filters separated by a light-shielding partition. On a base substrate 1, color filters 5 separated by patterned light-shielding partitions 4 are provided, and partitions 2 and pixels 3 are provided thereon.

[0145] The partition-formed substrate of the present invention preferably further comprises a low refractive index layer (C) having a refractive index of 1.20 to 1.35 at a wavelength of 550 nm (hereinafter, sometimes referred to as "low refractive index layer (C)") above or below the pixel (B). By comprising the low refractive index layer (C), the light extraction efficiency can be further improved, and the brightness of the display device can be further improved.

[0146] 6 shows a cross-sectional view of one embodiment of the substrate with partition walls of the present invention having a low refractive index layer. Patterned partition walls 2 and pixels 3 are formed on a base substrate 1, and a low refractive index layer 6 is further formed on these.

[0147] In a display device, from the viewpoint of appropriately suppressing reflection of backlight light and efficiently allowing light to enter pixels (B), the refractive index of the low refractive index layer (C) is preferably 1.20 or more, more preferably 1.23 or more. On the other hand, from the viewpoint of improving brightness, the refractive index of the low refractive index layer (C) is preferably 1.35 or less, more preferably 1.30 or less. Here, the refractive index of the low refractive index layer (C) can be measured by irradiating the cured film surface with light having a wavelength of 550 nm from a direction perpendicular to the film surface under atmospheric pressure and at 20°C using a prism coupler.

[0148] The low refractive index layer (C) can be formed, for example, using the low refractive index layer-forming material obtained in Preparation Example 6 described below, as in Examples 72 to 74. The thickness of the low refractive index layer (C) is preferably 0.1 μm or more, more preferably 0.5 μm or more, from the viewpoint of covering the steps of the pixels (B) and suppressing the occurrence of defects. On the other hand, the thickness of the low refractive index layer (C) is preferably 20 μm or less, more preferably 10 μm or less, from the viewpoint of reducing stress that may cause cracks in the low refractive index layer (C).

[0149] The partition-formed substrate of the present invention preferably further has an inorganic protective layer I having a thickness of 50 to 1,000 nm on the low refractive index layer (C). The presence of the inorganic protective layer I makes it difficult for moisture in the atmosphere to reach the low refractive index layer (C), thereby suppressing fluctuations in the refractive index of the low refractive index layer (C) and suppressing brightness deterioration.

[0150] 7 and 8 show cross-sectional views of one embodiment of the substrate with partition walls of the present invention, which has a low refractive index layer and an inorganic protective layer (I). Patterned partition walls 2 and pixels 3 are formed on a base substrate 1, and a low refractive index layer 6 and an inorganic protective layer (I) 7 are further formed above or below these.

[0151] The partition-formed substrate of the present invention preferably has the low refractive index layer (C) between the pixel (B) and the color filter, and further preferably has an inorganic protective layer (I) having a thickness of 50 to 1,000 nm on the low refractive index layer (C). By having the low refractive index layer (C) between the pixel (B) and the color filter, the light extraction effect of emitted light is improved, and the brightness of the display is improved.

[0152] 9 shows a cross-sectional view of one embodiment of the substrate with partition walls of the present invention, which has the low refractive index layer and inorganic protective layer (I) between the pixel (B) and the color filter. The substrate has color filters 5 separated by light-shielding partition walls 4 on a base substrate 1, and has low refractive index layers 6 and inorganic protective layers (I) 7 thereon, and further has patterned partition walls 2 and pixels 3 thereon.

[0153] The partition-formed substrate of the present invention preferably further comprises an inorganic protective layer (II) having a thickness of 50 to 1,000 nm between the pixels (B) and the low refractive index layer (C). The presence of the inorganic protective layer (II) makes it difficult for the raw materials forming the pixels (B) to move from the pixels (B) to the low refractive index layer, thereby suppressing fluctuations in the refractive index of the low refractive index layer (C) and reducing brightness degradation.

[0154] 10 shows a cross-sectional view of one embodiment of the substrate with partition walls of the present invention, which has a low refractive index layer and an inorganic protective layer (II). Patterned partition walls 2 and pixels 3 are formed on a base substrate 1, and an inorganic protective layer (II) 8 and a low refractive index layer 6 are further formed on these.

[0155] Furthermore, the partition-equipped substrate of the present invention preferably further comprises an inorganic protective layer (III) and / or a yellow organic protective layer having a thickness of 50 to 1,000 nm between the color filter and the pixel (B). The inorganic protective layer (III) makes it difficult for raw materials for forming the color filter to reach the pixel (B) containing the color-converting luminescent material from the color filter, thereby suppressing deterioration in the luminance of the pixel (B) containing the color-converting luminescent material. Furthermore, the yellow organic protective layer cuts out blue leakage light that was not fully converted by the pixel (B) containing the color-converting luminescent material, thereby improving color reproducibility.

[0156] 11 shows a cross-sectional view of one embodiment of the substrate with partition walls of the present invention, which has color filters and an inorganic protective layer (III) and / or a yellow organic protective layer. The substrate has patterned partition walls 2 and color filters 5 on a base substrate 1, and then has an inorganic protective layer (III) and / or a yellow organic protective layer 9 on top of these. Furthermore, the substrate has pixels 3 arranged and separated by the partition walls 2.

[0157] Furthermore, the partition-equipped substrate of the present invention preferably further comprises an inorganic protective layer (IV) and / or a yellow organic protective layer having a thickness of 50 to 1,000 nm on the base substrate. The inorganic protective layer (IV) and / or the yellow organic protective layer acts as a refractive index adjusting layer, allowing for more efficient extraction of light emitted from the pixel (B) and further improving the brightness of the display device. Furthermore, the yellow organic protective layer cuts out blue leakage light that was not fully converted by the pixel (B) containing the color-converting luminescent material, thereby improving color reproducibility.

[0158] 12 shows a cross-sectional view of one embodiment of the substrate with partition walls of the present invention, which has an inorganic protective layer (IV) and / or a yellow organic protective layer. The substrate has an inorganic protective layer (IV) and / or a yellow organic protective layer 10 on a base substrate 1, and patterned partition walls 2 and pixels 3 on top of these.

[0159] Examples of materials constituting the inorganic protective layers (I) to (IV) include metal oxides such as silicon oxide, indium tin oxide, and gallium zinc oxide; and metal nitrides such as silicon nitride. Among these, silicon nitride or silicon oxide is more preferred because of its low water vapor permeability and high permeability. The thickness of the inorganic protective layers (I) to (IV) is preferably 50 nm or more, more preferably 100 nm or more, from the viewpoint of sufficiently suppressing the permeation of substances such as water vapor. On the other hand, the thickness of the inorganic protective layers (I) to (IV) is preferably 800 nm or less, more preferably 500 nm or less, from the viewpoint of suppressing a decrease in transmittance.

[0160] The yellow organic protective layer can be obtained, for example, by patterning a resin composition containing a yellow pigment and a resin. The yellow pigment and resin can be the same materials as those described above for forming the partition wall (A-1). A preferred method for patterning the yellow organic protective layer is to form a pattern by a photosensitive paste method, as in the case of the partition wall (A-1).

[0161] As shown in FIG. 7, when the yellow organic protective layer 8 is formed on the color filter 7, the yellow organic protective layer 8 may serve as an overcoat layer that flattens each pixel of the color filter.

[0162] The substrate with partitions of the present invention can also be used in display devices using mini or micro LEDs, in which a large number of LEDs corresponding to each pixel are arranged on the substrate and separated by partitions formed on the substrate. Each pixel can be turned on / off by turning on / off the mini or micro LED, and no liquid crystal is required. In other words, the substrate with partitions of the present invention can be used not only as partitions separating each pixel, but also as partitions separating mini or micro LEDs in a backlight.

[0163] For example, the substrate with partition walls of the present invention preferably further comprises, on the base substrate, a light source selected from organic EL cells, mini LED cells, and micro LED cells. By separating the light source selected from organic EL cells, mini LED cells, and micro LED cells with partition walls, color mixing between pixels can be prevented, and the purity of the display color can be improved.

[0164] 13 shows a cross-sectional view of one embodiment of the substrate with partitions of the present invention, which has a light-emitting source selected from organic EL cells, mini LED cells, and micro LED cells. The light-emitting source 11 selected from organic EL cells, mini LED cells, and micro LED cells is located between partitions 2 patterned on a base substrate 1. Furthermore, the substrate with partitions of the present invention preferably further has a pixel (B) on the light-emitting source selected from organic EL cells, mini LED cells, and micro LED cells.

[0165] 14 shows a cross-sectional view of one embodiment of a substrate with partition walls of the present invention having light-emitting sources and pixels selected from organic EL cells, mini LED cells, and micro LED cells. Light-emitting sources 11 selected from organic EL cells, mini LED cells, and micro LED cells are placed between partition walls 2 patterned on a base substrate 1, and pixels 3 are further placed thereon.

[0166] Next, the display device of the present invention will be described. The display device of the present invention has the partition-equipped substrate and a light source. The light source is preferably a light source selected from a liquid crystal cell, an organic EL cell, a mini LED cell, and a micro LED cell. Due to their excellent light-emitting properties, organic EL cells are more preferable as the light source. A mini LED cell refers to a cell in which many LEDs with length and width of approximately 100 μm to 10 mm are arranged. A micro LED cell refers to a cell in which many LEDs with length and width of less than 100 μm are arranged.

[0167] The manufacturing method of the display device of the present invention will be described using an example of a display device having a partition-equipped substrate and an organic EL cell of the present invention. A photosensitive polyimide resin is applied to a glass substrate, and an insulating film with an opening is formed using photolithography. Aluminum is sputtered onto the polyimide resin, and then patterned using photolithography to form a back electrode layer made of aluminum in the openings where there was no insulating film. Next, tris(8-quinolinolato)aluminum (hereinafter abbreviated as Alq3) is vacuum-deposited on the polyimide resin as an electron transport layer, followed by a white-light-emitting layer formed by doping Alq3 with dicyanomethylenepyran, quinacridone, and 4,4'-bis(2,2-diphenylvinyl)biphenyl. Next, N,N'-diphenyl-N,N'-bis(α-naphthyl)-1,1'-biphenyl-4,4'-diamine is vacuum-deposited as a hole transport layer. Finally, an ITO film is formed as a transparent electrode by sputtering to produce an organic EL cell with a white light-emitting layer. A display device can be produced by bonding the above-mentioned partition-equipped substrate and the obtained organic EL cell facing each other with a sealant. [Example]

[0168] The present invention will be described in more detail below with reference to examples and comparative examples, but the present invention is not limited to these examples. The names of the compounds used, for which abbreviations are used, are shown below. PGMEA: Propylene glycol monomethyl ether acetate DAA: Diacetone alcohol EDM: Diethylene glycol ethyl methyl ether BHT: dibutylhydroxytoluene.

[0169] The solids concentration of the polysiloxane solutions in Synthesis Examples 1 to 6 and the (meth)acrylic polymer solutions in Synthesis Examples 7 to 9 was determined by the following method. 1.5 g of the polysiloxane solution or (meth)acrylic polymer solution was weighed into an aluminum cup and heated at 250°C for 30 minutes on a hot plate to evaporate the liquid. The weight of the solids remaining in the aluminum cup after heating was weighed, and the solids concentration was determined as a ratio to the weight before heating.

[0170] The weight average molecular weights of the polysiloxane solutions in Synthesis Examples 1 to 6 and the (meth)acrylic polymer solutions in Synthesis Examples 7 to 9 were determined in terms of polystyrene by the following method. Apparatus: Waters GPC measurement device with RI detector (2695) Column: PLgel MIXED-C column (Polymer Laboratories, 300 mm) x 2 (connected in series) Measurement temperature: 40℃ Flow rate: 1mL / min Solvent: tetrahydrofuran (THF) 0.5% by mass solution Standard material: polystyrene Detection mode: RI.

[0171] The content ratio of each repeating unit in the polysiloxane in Synthesis Examples 1 to 6 was determined by the following method. The polysiloxane solution was poured into an NMR sample tube made of "Teflon" (registered trademark) with a diameter of 10 mm. 29 Si-NMR measurements were performed, and the content ratio of each repeating unit was calculated from the ratio of the integral value of Si derived from a specific organosilane to the integral value of all Si derived from organosilanes. 29 The Si-NMR measurement conditions are as follows: Equipment: Nuclear magnetic resonance apparatus (JNM-GX270; manufactured by JEOL Ltd.) Measurement method: Gated decoupling method Measured nuclear frequency: 53.6693MHz ( 29 Si nucleus) Spectral width: 20000Hz Pulse width: 12 μs (45° pulse) Pulse repetition time: 30.0 seconds Solvent: acetone-d6 Reference material: tetramethylsilane Measurement temperature: 23℃ Sample rotation speed: 0.0 Hz.

[0172] Synthesis Example 1 Polysiloxane (PSL-1) solution A 1000 ml three-neck flask was charged with 117.76 g (0.525 mol) of styryltrimethoxysilane, 71.16 g (0.306 mol) of 3-methacryloxypropylmethyldimethoxysilane, 21.56 g (0.088 mol) of 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, 78.89 g (0.656 mol) of dimethyldimethoxysilane, 45.91 g (0.175 mol) of 3-trimethoxysilylpropylsuccinic anhydride, 1.180 g of BHT, and 251.60 g of PGMEA, and an aqueous phosphoric acid solution prepared by dissolving 3.353 g of phosphoric acid (1.0 wt % based on the charged monomers) in 80.33 g of water was added thereto over 30 minutes with stirring at 40°C. The flask was then immersed in a 70°C oil bath and stirred for 60 minutes, after which the oil bath was heated to 115°C over 30 minutes. One hour after the start of the temperature increase, the solution temperature (internal temperature) reached 100°C, and the mixture was heated and stirred for 2 hours (internal temperature 100-110°C), yielding a polysiloxane solution. During the temperature increase and heating and stirring, a gas mixture of 95% nitrogen by volume and 5% oxygen by volume was passed through at 0.05 L / min. A total of 182.96 g of by-products, methanol and water, was distilled during the reaction. PGMEA was added to the resulting polysiloxane solution to adjust the solids concentration to 40% by weight, yielding a polysiloxane (PSL-1) solution. The weight-average molecular weight of the resulting polysiloxane (PSL-1) was 12,000. In addition, the molar ratios of repeating units derived from styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, dimethyldimethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride in polysiloxane (PSL-1) were 30 mol%, 17.5 mol%, 5 mol%, 37.5 mol%, and 10 mol%, respectively.

[0173] Synthesis Example 2 Polysiloxane (PSL-2) solution A 1000 ml three-neck flask was charged with 198.29 g (0.831 mol) of phenyltrimethoxysilane, 71.16 g (0.306 mol) of 3-methacryloxypropylmethyldimethoxysilane, 21.56 g (0.088 mol) of 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, 42.08 g (0.350 mol) of dimethyldimethoxysilane, 45.91 g (0.175 mol) of 3-trimethoxysilylpropylsuccinic anhydride, 1.197 g of BHT, and 256.24 g of PGMEA, and an aqueous phosphoric acid solution prepared by dissolving 3.455 g of phosphoric acid (1.0 wt % based on the charged monomers) in 85.84 g of water was added thereto over 30 minutes with stirring at 40°C. The flask was then immersed in a 70°C oil bath and stirred for 60 minutes, after which the oil bath was heated to 115°C over 30 minutes. One hour after the start of the temperature increase, the solution temperature (internal temperature) reached 100°C, and the mixture was heated and stirred for 2 hours (internal temperature 100-110°C) to obtain a polysiloxane solution. During the temperature increase and heating and stirring, a gas mixture of 95% nitrogen by volume and 5% oxygen by volume was flowed at 0.05 L / min. A total of 195.52 g of by-products, methanol and water, was distilled during the reaction. PGMEA was added to the resulting polysiloxane solution to adjust the solids concentration to 40% by weight, yielding a polysiloxane (PSL-2) solution. The weight-average molecular weight of the resulting polysiloxane (PSL-2) was 5,500. In addition, the molar ratios of repeating units derived from phenyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, dimethyldimethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride in polysiloxane (PSL-2) were 47.5 mol%, 17.5 mol%, 5 mol%, 20 mol%, and 10 mol%, respectively.

[0174] Synthesis Example 3 Polysiloxane (PSL-3) solution A 1000 ml three-neck flask was charged with 203.13 g (0.831 mol) of diphenyldimethoxysilane, 76.06 g (0.306 mol) of 3-methacryloxypropyltrimethoxysilane, 21.56 g (0.088 mol) of 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, 42.08 g (0.350 mol) of dimethyldimethoxysilane, 45.91 g (0.175 mol) of 3-trimethoxysilylpropylsuccinic anhydride, 1.475 g of BHT, and 308.45 g of PGMEA, and an aqueous phosphoric acid solution prepared by dissolving 3.887 g of phosphoric acid (1.0 wt % based on the charged monomers) in 76.39 g of water was added thereto over 30 minutes with stirring at 40°C. The flask was then immersed in a 70°C oil bath and stirred for 60 minutes, after which the oil bath was heated to 115°C over 30 minutes. One hour after the start of the temperature increase, the solution temperature (internal temperature) reached 100°C, and the mixture was heated and stirred for 2 hours (internal temperature 100-110°C) to obtain a polysiloxane solution. During the temperature increase and heating and stirring, a gas mixture of 95% by volume of nitrogen and 5% by volume of oxygen was flowed at 0.05 L / min. A total of 173.99 g of by-products, methanol and water, was distilled during the reaction. PGMEA was added to the resulting polysiloxane solution to adjust the solids concentration to 40% by weight, yielding a polysiloxane (PSL-3) solution. The weight-average molecular weight of the resulting polysiloxane (PSL-3) was 6,000. In addition, the molar ratios of repeating units derived from diphenyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, dimethyldimethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride in polysiloxane (PSL-3) were 47.5 mol%, 17.5 mol%, 5 mol%, 20 mol%, and 10 mol%, respectively.

[0175] Synthesis Example 4 Polysiloxane (PSL-4) solution A 1000 ml three-necked flask was charged with 186.45 g (0.831 mol) of styryltrimethoxysilane, 21.56 g (0.088 mol) of 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, 78.89 g (0.656 mol) of dimethyldimethoxysilane, 45.91 g (0.175 mol) of 3-trimethoxysilylpropylsuccinic anhydride, 1.132 g of BHT, and 243.65 g of PGMEA. A phosphoric acid aqueous solution prepared by dissolving 3.328 g of phosphoric acid (1.0 wt% relative to the charged monomer) in 85.84 g of water was added over 30 minutes while stirring at 40 ° C. The flask was then immersed in a 70 ° C. oil bath and stirred for 60 minutes, after which the oil bath was heated to 115 ° C. over 30 minutes. One hour after the start of the temperature increase, the solution temperature (internal temperature) reached 100°C, and the mixture was then heated and stirred for two hours (internal temperature 100-110°C), yielding a polysiloxane solution. During the temperature increase and heating and stirring, a gas mixture of 95% by volume of nitrogen and 5% by volume of oxygen was passed through at 0.05 L / min. A total of 195.52 g of by-products, methanol and water, was distilled during the reaction. PGMEA was added to the resulting polysiloxane solution to adjust the solids concentration to 40% by weight, yielding a polysiloxane (PSL-4) solution. The weight-average molecular weight of the resulting polysiloxane (PSL-4) was 15,000. In addition, the molar ratios of repeating units derived from styryltrimethoxysilane, 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, dimethyldimethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride in polysiloxane (PSL-4) were 47.5 mol%, 5 mol%, 20 mol%, and 10 mol%, respectively.

[0176] Synthesis Example 5 Polysiloxane (PSL-5) solution A 1000 ml three-necked flask was charged with 76.06 g (0.306 mol) of 3-methacryloxypropyltrimethoxysilane, 21.56 g (0.088 mol) of 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, 142.01 g (1.181 mol) of dimethyldimethoxysilane, 45.91 g (0.175 mol) of 3-trimethoxysilylpropylsuccinic anhydride, 0.954 g of BHT, and 206.29 g of PGMEA. A phosphoric acid aqueous solution (2.855 g of phosphoric acid, 1.0 wt% based on the charged monomers) was added to 76.39 g of water over 30 minutes while stirring at 40 ° C. The flask was then immersed in a 70 ° C. oil bath and stirred for 60 minutes, after which the oil bath was heated to 115 ° C. over 30 minutes. One hour after the start of the temperature increase, the solution temperature (internal temperature) reached 100°C, and the mixture was then heated and stirred for two hours (internal temperature 100-110°C), yielding a polysiloxane solution. During the temperature increase and heating and stirring, a mixed gas of 95% by volume of nitrogen and 5% by volume of oxygen was flowed at 0.05 L / min. A total of 173.99 g of by-products, methanol and water, was distilled during the reaction. PGMEA was added to the resulting polysiloxane solution to adjust the solids concentration to 40% by weight, yielding a polysiloxane (PSL-5) solution. The weight-average molecular weight of the resulting polysiloxane (PSL-5) was 5,000. In addition, the molar ratios of repeating units derived from 3-methacryloxypropyltrimethoxysilane, 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, dimethyldimethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride in polysiloxane (PSL-5) were 17.5 mol%, 5 mol%, 67.5 mol%, and 10 mol%, respectively.

[0177] Synthesis Example 6 Polysiloxane (PSL-6) solution A 1000 ml three-necked flask was charged with 203.13 g (0.831 mol) of diphenyldimethoxysilane, 21.56 g (0.088 mol) of 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, 78.89 g (0.656 mol) of dimethyldimethoxysilane, 45.91 g (0.175 mol) of 3-trimethoxysilylpropylsuccinic anhydride, 1.312 g of BHT, and 275.12 g of PGMEA. A phosphoric acid aqueous solution prepared by dissolving 3.495 g of phosphoric acid (1.0 wt% based on the charged monomer) in 70.88 g of water was added over 30 minutes while stirring at 40 ° C. The flask was then immersed in a 70 ° C. oil bath and stirred for 60 minutes, after which the oil bath was heated to 115 ° C. over 30 minutes. One hour after the start of the temperature increase, the solution temperature (internal temperature) reached 100°C, and the mixture was then heated and stirred for two hours (internal temperature 100-110°C), yielding a polysiloxane solution. During the temperature increase and heating and stirring, a mixed gas of 95% by volume of nitrogen and 5% by volume of oxygen was flowed at 0.05 L / min. A total of 161.44 g of by-products, methanol and water, was distilled during the reaction. PGMEA was added to the resulting polysiloxane solution to adjust the solids concentration to 40% by weight, yielding a polysiloxane (PSL-6) solution. The weight-average molecular weight of the resulting polysiloxane (PSL-6) was 6,000. In addition, the molar ratios of repeating units derived from diphenyldimethoxysilane, 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, dimethyldimethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride in polysiloxane (PSL-6) were 47.5 mol%, 5 mol%, 37.5 mol%, and 10 mol%, respectively. The compositions of Synthesis Examples 1 to 6 are shown in Table 1.

[0178] [Table 1]

[0179] Synthesis Example 7 Synthesis of (meth)acrylic polymer solution (PAL-1) A 500 mL flask was charged with 3.00 g of 2,2'-azobis(isobutyronitrile) and 50.0 g of PGMEA, followed by 30.0 g (0.349 mol) of methacrylic acid, 22.48 g (0.216 mol) of styrene, and 35.0 g (0.149 mol) of tricyclo[5.2.1.02,6]decan-8-yl methacrylate. The mixture was stirred at room temperature for a while, purged with nitrogen, and then heated and stirred at 70 °C for 5 hours. Next, 15.00 g (0.106 mol) of glycidyl methacrylate, 1.00 g of triphenylphosphine, 0.200 g of p-methoxyphenol, and 100 g of PGMEA were added to the resulting solution, and the mixture was heated and stirred at 90 °C for 4 hours to obtain a (meth)acrylic polymer solution. PGMEA was added to the obtained (meth)acrylic polymer solution so that the solid content concentration became 40% by weight, to obtain (meth)acrylic polymer solution (PAL-1). The weight average molecular weight of the (meth)acrylic polymer was 16,000.

[0180] Synthesis Example 8 Synthesis of (meth)acrylic polymer solution (PAL-2) A 500 mL flask was charged with 3.00 g of 2,2'-azobis(isobutyronitrile) and 50.0 g of PGMEA, followed by 15.0 g (0.174 mol) of methacrylic acid, 38.06 g (0.216 mol) of benzyl methacrylate, and 32.80 g (0.149 mol) of tricyclodecanyl methacrylate. The mixture was stirred at room temperature for a while, purged with nitrogen, and then heated and stirred at 70 °C for 5 hours. Next, 15.0 g (0.106 mol) of glycidyl methacrylate, 1 g of triphenylphosphine, 0.200 g of p-methoxyphenol, and 100 g of PGMEA were added to the resulting solution, and the mixture was heated and stirred at 90 °C for 4 hours to obtain a (meth)acrylic polymer solution. PGMEA was added to the resulting (meth)acrylic polymer solution to a solids concentration of 40 wt% to give (meth)acrylic polymer solution (PAL-2). The weight average molecular weight of the (meth)acrylic polymer was 25,000.

[0181] Synthesis Example 9 Synthesis of (meth)acrylic polymer solution (PAL-3) A 500 mL flask was charged with 3.00 g of 2,2'-azobis(isobutyronitrile) and 50.0 g of PGMEA, followed by 30.0 g (0.349 mol) of methacrylic acid and 116.98 g (0.498 mol) of tricyclo[5.2.1.02,6]decan-8-yl methacrylate. The mixture was stirred at room temperature for a while, then purged with nitrogen and heated and stirred at 70 °C for 5 hours. Next, 15.00 g (0.106 mol) of glycidyl methacrylate, 1.00 g of triphenylphosphine, 0.200 g of p-methoxyphenol, and 100 g of PGMEA were added to the resulting solution and heated and stirred at 90 °C for 4 hours to obtain a (meth)acrylic polymer solution. PGMEA was added to the resulting (meth)acrylic polymer solution to a solids concentration of 40 wt% to give (meth)acrylic polymer solution (PAL-3). The weight average molecular weight of the (meth)acrylic polymer was 16,000. The compositions of Synthesis Examples 7 to 9 are shown in Table 2.

[0182] [Table 2]

[0183] Synthesis Example 10 Green organic phosphor 3,5-Dibromobenzaldehyde (3.0 g), 4-t-butylphenylboronic acid (5.3 g), tetrakis(triphenylphosphine)palladium(0) (0.4 g), and potassium carbonate (2.0 g) were placed in a flask and purged with nitrogen. Degassed toluene (30 mL) and degassed water (10 mL) were added and refluxed for 4 hours. The reaction solution was cooled to room temperature and separated. The organic layer was washed with saturated brine. This organic layer was dried over magnesium sulfate, filtered, and the solvent was evaporated. The resulting reaction product was purified by silica gel column chromatography to yield 3,5-bis(4-t-butylphenyl)benzaldehyde (3.5 g) as a white solid. Next, 3,5-bis(4-t-butylphenyl)benzaldehyde (1.5 g) and 2,4-dimethylpyrrole (0.7 g) were placed in a flask, and dehydrated dichloromethane (200 mL) and trifluoroacetic acid (1 drop) were added. The mixture was stirred under a nitrogen atmosphere for 4 hours. A solution of 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (0.85 g) in dehydrated dichloromethane was added to the reaction mixture and stirred for an additional hour. After the reaction was completed, boron trifluoride diethyl ether complex (7.0 mL) and diisopropylethylamine (7.0 mL) were added and stirred for 4 hours. Water (100 mL) was then added and stirred, and the organic layer was separated. The organic layer was dried over magnesium sulfate, filtered, and the solvent was distilled off. The resulting reaction product was purified by silica gel column chromatography to obtain 0.4 g of a green powder (yield 17%). 1 The results of H-NMR analysis are as follows, and it was confirmed that the green powder obtained above was [G-1] represented by the following structural formula. 1 H-NMR (CDCl3(d=ppm)): 7.95(s,1H), 7.63-7.48(m,10H), 6.00(s,2H), 2.58(s,6H), 1.50(s,6H), 1.37(s,18H).

[0184] [ka]

[0185] Synthesis Example 11 Red organic phosphor A mixed solution of 300 mg of 4-(4-t-butylphenyl)-2-(4-methoxyphenyl)pyrrole, 201 mg of 2-methoxybenzoyl chloride, and 10 mL of toluene was heated at 120°C for 6 hours under a nitrogen stream. After cooling to room temperature, the solvent was evaporated. The resulting residue was washed with 20 mL of ethanol and dried under vacuum to obtain 260 mg of 2-(2-methoxybenzoyl)-3-(4-t-butylphenyl)-5-(4-methoxyphenyl)pyrrole. Next, a mixed solution of 260 mg of 2-(2-methoxybenzoyl)-3-(4-t-butylphenyl)-5-(4-methoxyphenyl)pyrrole, 180 mg of 4-(4-t-butylphenyl)-2-(4-methoxyphenyl)pyrrole, 206 mg of methanesulfonic anhydride, and 10 mL of degassed toluene was heated at 125°C for 7 hours under a nitrogen stream. After cooling the reaction mixture to room temperature, 20 ml of water was poured in and the mixture was extracted with 30 ml of dichloromethane. The organic layer was washed twice with 20 ml of water, evaporated, and dried in vacuo to obtain a pyrromethene derivative as a residue. Next, 305 mg of diisopropylethylamine and 670 mg of boron trifluoride diethyl ether complex were added to a mixed solution of the obtained pyrromethene derivative and 10 ml of toluene under a nitrogen stream, and the mixture was stirred at room temperature for 3 hours. 20 ml of water was poured into the reaction mixture, and the mixture was extracted with 30 ml of dichloromethane. The organic layer was washed twice with 20 ml of water, dried over magnesium sulfate, and evaporated. After purification by silica gel column chromatography and vacuum drying, 0.27 g of a reddish-purple powder was obtained (yield 70%). 1 The results of H-NMR analysis are as follows, and it was confirmed that the reddish-purple powder obtained above was [R-1] represented by the following structural formula. 1 H-NMR (CDCl3(d=ppm)): 1.19(s,18H),3.42(s,3H),3.85(s,6H),5.72(d,1H),6.20(t,1H),6.42-6.97(m,16H),7.89(d,4H).

[0186] [ka]

[0187] Synthesis Example 12 Silica particle-containing polysiloxane solution (LS-1) A 500 ml three-neck flask was charged with 0.05 g (0.4 mmol) of methyltrimethoxysilane, 0.66 g (3.0 mmol) of trifluoropropyltrimethoxysilane, 0.10 g (0.4 mmol) of trimethoxysilylpropylsuccinic anhydride, 7.97 g (34 mmol) of γ-acryloxypropyltrimethoxysilane, and 224.37 g of a 15.6 wt% silica particle isopropyl alcohol dispersion (IPA-ST-UP: Nissan Chemical Industries, Ltd.), and 163.93 g of ethylene glycol mono-t-butyl ether was added. While stirring at room temperature, an aqueous solution of phosphoric acid (0.088 g of phosphoric acid dissolved in 4.09 g of water) was added over 3 minutes. The flask was then immersed in a 40 °C oil bath and stirred for 60 minutes, after which the oil bath was heated to 115 °C over 30 minutes. One hour after the start of the temperature increase, the internal temperature of the solution reached 100°C, and the solution was heated and stirred for another two hours (internal temperature 100-110°C), yielding a silica particle-containing polysiloxane solution (LS-1). Nitrogen was flowed in at 0.05 L / min during the temperature increase and heating and stirring. A total of 194.01 g of by-products, methanol and water, were distilled during the reaction. The solids concentration of the resulting silica particle-containing polysiloxane solution (LS-1) was 24.3 wt%, and the polysiloxane and silica particle contents of the solids were 15 wt% and 85 wt%, respectively. The molar ratios of repeating units derived from methyltrimethoxysilane, trifluoropropyltrimethoxysilane, 3-trimethoxysilylpropylsuccinic anhydride, and γ-acryloxypropyltrimethoxysilane in the resulting silica particle-containing polysiloxane (LS-1) were 1.0 mol%, 8.0 mol%, 1.0 mol%, and 90.0 mol%, respectively.

[0188] Example 1 Partition wall resin composition (P-1) 5.00 g of titanium dioxide pigment (R-960; manufactured by BASF Japan Ltd. (hereinafter referred to as "R-960")) as a white pigment, 5.00 g of the polysiloxane (PSL-1) solution obtained in Synthesis Example 1 as a resin, and 0.0188 g of titanium nitride as a light-shielding pigment were mixed and dispersed using a mill-type disperser filled with zirconia beads to obtain a pigment dispersion (MW-1).

[0189] Next, 8.27 g of the pigment dispersion (MW-1), 2.83 g of polysiloxane (PSL-1) solution, 4.48 g of the (meth)acrylic polymer (PAL-1) solution obtained in Synthesis Example 7, and 0.001 g of ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(O-acetyloxime) (“Irgacure” (registered trademark) OXE-02, manufactured by BASF Japan Ltd. (hereinafter referred to as “OXE-02”)) as a photopolymerization initiator were mixed. 0.155 g, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide ("Irgacure" 819, manufactured by BASF Japan Ltd. (hereinafter "IC-819")) 0.258 g, and 1,3,5-tris(3,5-di-t-butyl-4-hydroxyphenylmethyl)-2,4,6-trimethylbenzene ("ADEKA STAB" (registered trademark) AO-330, manufactured by ADEKA Corporation (hereinafter "AO-330")) 0.001 g as a hindered phenol compound. 0.0309g, as a photopolymerizable compound, 2.063g of dipentaerythritol hexaacrylate ("KAYARAD" (registered trademark) DPHA, manufactured by Shin-Nihon Yakugyo Co., Ltd. (hereinafter referred to as "DPHA")), as a liquid-repellent compound, 0.258g of a photopolymerizable fluorine-containing compound ("Megafac" (registered trademark) RS-72A, 20% by weight PGMEA diluted solution, manufactured by DIC Corporation (hereinafter referred to as "RS-72A")), 3',4'-epoxycyclohexylmethyl-3,4-epoxy 0.021 g of cyclohexanecarboxylate (Celloxide® 2021P, manufactured by Daicel Corporation (hereinafter referred to as "Celloxide® 2021P")) and 0.103 g of a 10 wt % diluted solution of acrylic surfactant (BYK® 352, manufactured by BYK Japan K.K. (hereinafter referred to as "BYK-352") in PGMEA (corresponding to a concentration of 500 ppm)) were dissolved in 0.513 g of solvent PGMEA and 1.65 g of DAA and stirred. The resulting mixture was filtered through a 5.0 μm filter to obtain a partition wall resin composition (P-1).

[0190] Example 2 Partition wall resin composition (P-2) A white pigment (R-960) and a polysiloxane (PSL-1) solution (5.00 g) were mixed and dispersed using a mill-type disperser filled with zirconia beads to obtain a pigment dispersion (MW-2). An organometallic compound solution (OM-1) was obtained by dissolving 0.103 g of bis(acetylacetonato)palladium as an organometallic compound and 0.089 g of triphenylphosphine (equimolar amount relative to the organometallic compound) as a phosphorus-containing coordinating compound in 1.726 g of DAA.

[0191] A resin composition for partition walls (P-2) was obtained in the same manner as in Example 1, except that 8.25 g of the pigment dispersion (MW-2) was added instead of the pigment dispersion (MW-1), 1.92 g of the organometallic compound solution (OM-1), 2.61 g of the polysiloxane (PSL-1) solution, 4.26 g of the (meth)acrylic polymer (PAL-1) solution, and 0.701 g of PGMEA were added, and DAA was not added.

[0192] Example 3 Resin composition for partition walls (P-3) An organometallic compound solution (OM-2) was obtained by dissolving 0.103 g of silver neodecanoate as an organometallic compound in 0.928 g of EDM. A partition wall resin composition (P-3) was obtained in the same manner as in Example 2, except that 1.03 g of the organometallic compound solution (OM-2), 2.72 g of a polysiloxane (PSL-1) solution, 4.37 g of a (meth)acrylic polymer (PAL-1) solution, and 1.366 g of PGMEA were added instead of the organometallic compound solution (OM-1).

[0193] Examples 4 to 6 Partition wall resin compositions (P-4) to (P-6) Resin compositions for partition walls (P-4) to (P-6) were obtained in the same manner as in Example 1, except that the polysiloxane (PSL-1) solution was replaced with the polysiloxane (PSL-2), (PSL-3), or (PSL-4) solution, respectively.

[0194] Example 7 Resin composition for partition walls (P-7) A partition wall resin composition (P-7) was obtained in the same manner as in Example 1, except that the (meth)acrylic polymer (PAL-2) solution was used instead of the (meth)acrylic polymer (PAL-1) solution.

[0195] Example 8 Resin composition for partition walls (P-8) A partition wall resin composition (P-8) was obtained in the same manner as in Example 1, except that the cardo polymer V-259ME was used instead of the (meth)acrylic polymer (PAL-1) solution.

[0196] Example 9 Resin composition for partition walls (P-9) A partition wall resin composition (P-9) was obtained in the same manner as in Example 1, except that the cardo polymer WR-301 was used instead of the (meth)acrylic polymer (PAL-1) solution.

[0197] Example 10 Resin composition for partition walls (P-10) A partition wall resin composition (P-10) was obtained in the same manner as in Example 1, except that pentaerythritol tetrakis(3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate ("ADK STAB" (registered trademark) AO-60, manufactured by ADEKA CORPORATION (hereinafter referred to as "AO-60")) was used instead of the hindered phenol compound AO-330.

[0198] Example 11 Partition wall resin composition (P-11) A partition wall resin composition (P-11) was obtained in the same manner as in Example 1, except that 6,6'-di-t-butyl-4,4'-butylidenedi-m-cresol ("ADK STAB" (registered trademark) AO-40, manufactured by ADEKA CORPORATION (hereinafter referred to as "AO-40")) was used instead of the hindered phenol compound AO-330.

[0199] Example 12 Resin composition for partition walls (P-12) A partition wall resin composition (P-12) was obtained in the same manner as in Example 1, except that octadecyl 3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate ("ADK STAB" (registered trademark) AO-50, manufactured by ADEKA CORPORATION (hereinafter referred to as "AO-50")) was used instead of the hindered phenol compound AO-330.

[0200] Example 13 Resin composition for partition walls (P-13) A partition wall resin composition (P-13) was obtained in the same manner as in Example 1, except that the amount of the hindered phenol compound AO-330 added was 0.0474 g, and 2.81 g of the polysiloxane (PSL-1) solution, 4.46 g of the (meth)acrylic polymer (PAL-1) solution, and 0.538 g of PGMEA were added.

[0201] Example 14 Resin composition for partition walls (P-14) A partition wall resin composition (P-14) was obtained in the same manner as in Example 1, except that the amount of the hindered phenol compound AO-330 added was 0.330 g, and 2.46 g of the polysiloxane (PSL-1) solution, 4.10 g of the (meth)acrylic polymer (PAL-1) solution, and 0.962 g of PGMEA were added.

[0202] Example 15 Resin composition for partition walls (P-15) A partition wall resin composition (P-15) was obtained in the same manner as in Example 1, except that the amount of the hindered phenol compound AO-330 added was 0.00516 g, and 2.86 g of the polysiloxane (PSL-1) solution, 4.51 g of the (meth)acrylic polymer (PAL-1) solution, and 0.474 g of PGMEA were added.

[0203] Example 16 Resin composition for partition walls (P-16) A partition wall resin composition (P-16) was obtained in the same manner as in Example 1, except that the amount of the hindered phenol compound AO-330 added was 0.00309 g, and 2.87 g of the polysiloxane (PSL-1) solution, 4.51 g of the (meth)acrylic polymer (PAL-1) solution, and 0.474 g of PGMEA were added.

[0204] Example 17 Resin composition for partition walls (P-17) A partition wall resin composition (P-17) was obtained in the same manner as in Example 1, except that 0.103 g of 1,2,2,6,6-pentamethyl-4-piperidyl methacrylate ("ADK STAB" (registered trademark) LA-82, manufactured by ADEKA Corporation (hereinafter referred to as "LA-82")) was added as a hindered amine compound, 2.70 g of polysiloxane (PSL-1) solution, 4.35 g of (meth)acrylic polymer (PAL-1) solution, and 0.668 g of PGMEA were added.

[0205] Example 18 Resin composition for partition walls (P-18) A partition wall resin composition (P-18) was obtained in the same manner as in Example 17, except that 2,2,6,6-tetramethyl-4-piperidyl methacrylate ("ADK STAB" (registered trademark) LA-87, manufactured by ADEKA CORPORATION (hereinafter referred to as "LA-87")) was used instead of the hindered amine compound LA-82.

[0206] Example 19 Resin composition for partition walls (P-19) A partition wall resin composition (P-19) was obtained in the same manner as in Example 17, except that the hindered phenol compound AO-330 was not added, and 2.74 g of the polysiloxane (PSL-1) solution, 4.39 g of the (meth)acrylic polymer (PAL-1) solution, and 0.621 g of PGMEA were added.

[0207] Example 20 Resin composition for partition walls (P-20) A partition wall resin composition (P-20) was obtained in the same manner as in Example 19, except that bis(1,2,2,6,6-pentamethyl-4-piperidyl) sebacate ("ADK STAB" (registered trademark) LA-72, manufactured by ADEKA CORPORATION (hereinafter referred to as "LA-72")) was used instead of the hindered amine compound LA-82.

[0208] Example 21 Resin composition for partition walls (P-21) A partition wall resin composition (P-21) was obtained in the same manner as in Example 19, except that 1,2,2,5,5-pentamethylpiperidine was used instead of the hindered amine compound LA-82.

[0209] Example 22 Resin composition for partition walls (P-22) A partition wall resin composition (P-22) was obtained in the same manner as in Example 19, except that the amount of the hindered amine compound LA-82 added was 0.248 g, and 2.56 g of the polysiloxane (PSL-1) solution, 4.71 g of the (meth)acrylic polymer (PAL-1) solution, and 0.838 g of PGMEA were added.

[0210] Example 23 Resin composition for partition walls (P-23) A partition wall resin composition (P-23) was obtained in the same manner as in Example 19, except that the amount of the hindered amine compound LA-82 added was 0.371 g, and 2.40 g of the polysiloxane (PSL-1) solution, 4.05 g of the (meth)acrylic polymer (PAL-1) solution, and 1.024 g of PGMEA were added.

[0211] Example 24 Resin composition for partition walls (P-24) A partition wall resin composition (P-24) was obtained in the same manner as in Example 19, except that the amount of the hindered amine compound LA-82 added was 0.0100 g, and 2.86 g of the polysiloxane (PSL-1) solution, 4.51 g of the (meth)acrylic polymer (PAL-1) solution, and 0.482 g of PGMEA were added.

[0212] Example 25 Resin composition for partition walls (P-25) A partition wall resin composition (P-25) was obtained in the same manner as in Example 19, except that the amount of the hindered amine compound LA-82 added was 0.0039, and 2.86 g of the polysiloxane (PSL-1) solution, 4.51 g of the (meth)acrylic polymer (PAL-1) solution, and 0.471 g of PGMEA were added.

[0213] Example 26 Resin composition for partition walls (P-26) A resin composition for partition walls (P-26) was obtained in the same manner as in Example 1, except that the amount of IC-819 added was 0.413 g and OXE-02 was not added.

[0214] Example 27 Resin composition for partition walls (P-27) A resin composition for partition walls (P-27) was obtained in the same manner as in Example 1, except that the amount of OXE-02 added was 0.413 g and IC-819 was not added.

[0215] Example 28 Resin composition for partition walls (P-28) A partition wall resin composition (P-28) was obtained in the same manner as in Example 1, except that the amount of polysiloxane (PSL-1) solution added was 1.33 g and the amount of (meth)acrylic polymer (PAL-1) solution added was 5.98 g.

[0216] Example 29 Resin composition for partition walls (P-29) A partition wall resin composition (P-29) was obtained in the same manner as in Example 1, except that the amount of polysiloxane (PSL-1) solution added was 4.73 g and the amount of (meth)acrylic polymer (PAL-1) solution added was 2.58 g.

[0217] Example 30 Resin composition for partition walls (P-30) 7.68 g of polysiloxane (PSL-1) solution, 7.68 g of (meth)acrylic polymer (PAL-1) solution, 0.123 g of OXE-02, 0.205 g of IC-819, 1.64 g of DPHA, 0.205 g of RS-72A, 0.016 g of Celloxide 2021P, 0.025 g of AO-330, and 0.103 g of a 10 wt% PGMEA solution of BYK-352 were dissolved in 0.619 g of PGMEA and 2.214 g of DAA and stirred. The resulting mixture was filtered through a 5.0 μm filter to obtain a partition wall resin composition (P-30).

[0218] Example 31 Resin composition for partition walls (P-31) A partition wall resin composition (P-31) was obtained in the same manner as in Example 2, except that the organometallic compound solution (OM-1) was not added, and the amounts of the polysiloxane (PSL-1) solution, the (meth)acrylic polymer (PAL-1) solution, the PGMEA, and the DAA were changed to 2.85 g, 4.50 g, 0.284 g, and 1.86 g, respectively.

[0219] Example 32 Resin composition for partition walls (P-32) 0.20 g of titanium nitride (light-shielding pigment) and 7.00 g of polysiloxane (PSL-1) solution were mixed and dispersed using a mill-type disperser filled with zirconia beads to obtain pigment dispersion (MW-3). 5.90 g of the pigment dispersion (MW-3), 0.79 g of polysiloxane (PSL-1) solution, 6.54 g of (meth)acrylic polymer (PAL-1) solution, 0.108 g of OXE-02, 0.180 g of IC-819, 1.44 g of DPHA, 0.179 g of RS-72A, 0.014 g of Celloxide 2021P, 0.022 g of AO-330, and 0.103 g of a 10 wt% PGMEA solution of BYK-352 were dissolved in 1.804 g of PGMEA solvent and stirred. The resulting mixture was filtered through a 5.0 μm filter to obtain a partition wall resin composition (P-32).

[0220] Example 33 Resin composition for partition walls (P-33) 4.00 g of the organometallic compound solution (OM-1), 6.21 g of polysiloxane (PSL-1) solution, 6.21 g of (meth)acrylic polymer (PAL-1) solution, 0.108 g of OXE-02, 0.180 g of IC-819, 1.44 g of DPHA, 0.179 g of RS-72A, 0.014 g of Celloxide 2021P, 0.022 g of AO-330, and 0.103 g of a 10 wt% PGMEA solution of BYK-352 were dissolved in 2.03 g of PGMEA solvent and stirred. The resulting mixture was filtered through a 5.0 μm filter to obtain a partition wall resin composition (P-33).

[0221] Example 34 Resin composition for partition walls (P-34) A partition wall resin composition (P-34) was obtained in the same manner as in Example 2, except that the liquid-repellent compound RS-72A was not added, and the amount of the polysiloxane (PSL-1) solution added was 2.67 g, the amount of the (meth)acrylic polymer (PAL-1) solution added was 4.32 g, and the amount of PGMEA added was 0.830 g.

[0222] Comparative Examples 1~2 Resin composition for partition walls (P-35)~(P-36) Resin compositions for partition walls (P-35) to (P-36) were obtained in the same manner as in Example 1, except that the polysiloxane (PSL-1) solution was replaced with the polysiloxane (PSL-5) or (PSL-6) solution, respectively.

[0223] Comparative Example 3 Resin composition for partition walls (P-37) A partition wall resin composition (P-37) was obtained in the same manner as in Example 1, except that the (meth)acrylic polymer (PAL-3) solution was used instead of the (meth)acrylic polymer (PAL-1) solution.

[0224] Comparative Example 4 Resin composition for partition walls (P-38) A partition wall resin composition (P-38) was obtained in the same manner as in Example 1, except that the amount of polysiloxane (PSL-1) solution added was 0.590 g and the amount of (meth)acrylic polymer (PAL-1) solution added was 6.72 g.

[0225] Comparative Example 5 Resin composition for partition walls (P-39) A partition wall resin composition (P-39) was obtained in the same manner as in Example 1, except that the amount of polysiloxane (PSL-1) solution added was 5.07 g and the amount of (meth)acrylic polymer (PAL-1) solution added was 2.24 g.

[0226] Comparative Example 6 Resin composition for partition walls (P-40) A partition wall resin composition (P-40) was obtained in the same manner as in Example 1, except that the (meth)acrylic polymer (PAL-1) solution was not added and the amount of polysiloxane (PSL-1) solution added was 7.31 g.

[0227] Comparative Example 7 Resin composition for partition walls (P-41) 5.00 g of R-960 as a white pigment, 5.00 g of a (meth)acrylic polymer (PAL-1) solution as a resin, and 0.0188 g of titanium nitride as a light-shielding pigment were mixed and dispersed using a mill-type disperser filled with zirconia beads to obtain a pigment dispersion (MW-4).

[0228] A partition wall resin composition (P-41) was obtained in the same manner as in Example 1, except that 8.27 g of pigment dispersion (MW-4) was added instead of pigment dispersion (MW-1), and 7.31 g of (meth)acrylic polymer (PAL-1) solution was added instead of polysiloxane (PSL-1) solution.

[0229] Comparative Example 8 Resin composition for partition walls (P-42) A partition wall resin composition (P-42) was obtained in the same manner as in Example 1, except that the hindered phenol compound AO-330 was not added, and 2.87 g of the polysiloxane (PSL-1) solution, 4.52 g of the (meth)acrylic polymer (PAL-1) solution, and 0.467 g of PGMEA were added. The compositions of Examples 1 to 34 and Comparative Examples 1 to 8 are shown in Tables 3-1 to 3-4.

[0230] [Table 3-1]

[0231] [Table 3-2]

[0232] [Table 3-3]

[0233] [Table 3-4]

[0234] Preparation Example 1 Color-changing light-emitting material composition (CL-1) 20 parts by weight of a 0.5 wt% toluene solution of green quantum dot material (Lumidot 640 CdSe / ZnS, average particle size 6.3 nm: manufactured by Aldrich), 45 parts by weight of DPHA, 5 parts by weight of "Irgacure" (registered trademark) 907 (manufactured by BASF Japan Ltd.), 166 parts by weight of a 30 wt% PGMEA solution of acrylic resin (SPCR-18 (trade name), manufactured by Showa Denko K.K.), and 97 parts by weight of toluene were mixed and stirred to dissolve uniformly. The resulting mixture was filtered through a 0.45 μm syringe filter to prepare a color-converting luminescent material composition (CL-1).

[0235] Preparation Example 2 Color-changing light-emitting material composition (CL-2) A color-converting luminescent material composition (CL-2) was prepared in the same manner as in Preparation Example 1, except that 0.4 parts by weight of the green phosphor G-1 obtained in Synthesis Example 10 was used instead of the green quantum dot material, and the amount of toluene added was changed to 117 parts by weight.

[0236] Preparation Example 3 Color-changing light-emitting material composition (CL-3) A color-converting luminescent material composition (CL-3) was prepared in the same manner as in Preparation Example 1, except that 0.4 parts by weight of the red phosphor R-1 obtained in Synthesis Example 11 was used instead of the green quantum dot material, and the amount of toluene added was changed to 117 parts by weight.

[0237] Preparation Example 4 Color filter forming material (CF-1) A slurry was prepared by mixing 90 g of CI Pigment Green 59, 60 g of CI Pigment Yellow 150, 75 g of a polymer dispersant ("BYK" (registered trademark)-6919 (trade name) manufactured by BYK-Chemie (hereinafter referred to as "BYK-6919")), 100 g of a binder resin ("ADEKA ARCLES" (registered trademark) WR301 (trade name) manufactured by ADEKA Corporation), and 675 g of PGMEA. The beaker containing the slurry was connected to a Dyno-Mill via a tube, and dispersion treatment was carried out for 8 hours at a peripheral speed of 14 m / s using 0.5 mm diameter zirconia beads as media to prepare Pigment Green 59 dispersion (GD-1).

[0238] A color filter-forming material (CF-1) was prepared by mixing 56.54 g of the C12 Pigment Green 59 dispersion (GD-1), 3.14 g of an acrylic resin ("CYCLOMER" (registered trademark) P(ACA) Z250 (trade name) manufactured by Daicel-Allnex Corporation (hereinafter referred to as "P(ACA) Z250")), 2.64 g of DPHA, 0.330 g of a photopolymerization initiator ("OPTOMER" (registered trademark) NCI-831 (trade name) manufactured by ADEKA Corporation (hereinafter referred to as "NCI-831")), 0.04 g of a surfactant (BYK" (registered trademark) -333 (trade name) manufactured by BYK-Chemie KK (hereinafter referred to as "BYK-333")), 0.01 g of BHT as a polymerization inhibitor, and 37.30 g of PGMEA as a solvent.

[0239] Preparation Example 5 Resin composition for light-shielding partition walls A slurry was prepared by mixing 150 g of carbon black (MA100 (trade name) manufactured by Mitsubishi Chemical Corporation), 75 g of polymer dispersant BYK-6919, 100 g of P(ACA)Z250, and 675 g of PGMEA. The beaker containing the slurry was connected to a Dyno-Mill via a tube, and dispersion treatment was carried out for 8 hours at a peripheral speed of 14 m / s using 0.5 mm diameter zirconia beads as media to produce pigment dispersion (MB-1).

[0240] A resin composition for light-shielding partition walls was prepared by mixing 56.54 g of pigment dispersion (MB-1), 3.14 g of P(ACA)Z250, 2.64 g of DPHA, 0.330 g of NCI-831, 0.04 g of BYK-333, 0.01 g of tert-butylcatechol as a polymerization inhibitor, and 37.30 g of PGMEA.

[0241] Preparation Example 6 Low refractive index layer forming material 5.350 g of the silica particle-containing polysiloxane solution (LS-1) obtained in Synthesis Example 12, 1.170 g of ethylene glycol mono-t-butyl ether, and 3.48 g of DAA were mixed and then filtered through a 0.45 μm syringe filter to prepare a low refractive index layer-forming material.

[0242] Preparation Example 7 Yellow organic protective layer forming material (YL-1) A slurry was prepared by mixing 150 g of CI Pigment Yellow 150, 75 g of a polymer dispersant ("BYK" (registered trademark)-6919 (trade name) manufactured by BYK-Chemie (hereinafter referred to as "BYK-6919")), 100 g of a binder resin ("ADEKA ARCLES" (registered trademark) WR301 (trade name) manufactured by ADEKA Corporation), and 675 g of PGMEA. The beaker containing the slurry was connected to a Dyno-Mill via a tube, and dispersion treatment was carried out for 8 hours at a peripheral speed of 14 m / s using 0.5 mm diameter zirconia beads as media to prepare Pigment Yellow 150 dispersion (YD-1).

[0243] 3.09 g of Pigment Yellow 150 dispersion (YD-1), 23.54 g of polysiloxane (PSL-1) solution as resin, 6.02 g of DPHA as photopolymerizable compound, 6.02 g of organometallic compound solution (OM-2) prepared using silver neodecanoate as organometallic compound, 0.20 g of OXE-02 as photopolymerization initiator, 0.40 g of IC-819, 0.060 g of IRGANOX® 1010, and 0.050 g of a 10 wt% diluted solution of BYK-352 in PGMEA (corresponding to a concentration of 500 ppm) were dissolved in 61.15 g of PGMEA solvent and stirred. The resulting mixture was filtered through a 5.0 μm filter to obtain a yellow organic protective layer-forming material (YL-1).

[0244] Examples 35 to 69, Comparative Examples 9 to 16 A 10 cm square alkali-free glass substrate (AGC Technoglass Co., Ltd., thickness 0.7 mm) was used as the base substrate. The partition wall resin compositions shown in Tables 4 and 5 were spin-coated thereon, and dried for 3 minutes at a temperature of 100°C using a hot plate (product name SCW-636, Dainippon Screen Mfg. Co., Ltd.) to produce a dried film. The produced dried film was then exposed to light through a photomask using a parallel light mask aligner (product name PLA-501F, Canon Inc.) with an ultra-high pressure mercury lamp as the light source, at an exposure dose of 100 mJ / cm. 2The film was exposed to g-, h-, and i-rays (exposure dose is an i-ray equivalent value). The film was then shower-developed for 100 seconds using an automatic developing apparatus (Takizawa Sangyo Co., Ltd.'s "AD-2000 (trade name)") with a 0.045 wt % potassium hydroxide aqueous solution, followed by rinsing with water for 30 seconds. The film was then heated in air at 230°C for 30 minutes using an oven (trade name IHPS-222, Espec Corp.) to form partition walls on the glass substrate, each 10 μm high and 20 μm wide, in a grid-like pattern with a short side of 80 μm and a long side of 280 μm at a pitch.

[0245] The color-changing luminescent material compositions shown in Tables 4 and 5 were applied to the areas separated by the partitions of the obtained partition-equipped substrate using an inkjet method under a nitrogen atmosphere, and dried at 100°C for 30 minutes to form pixels with a thickness of 5.0 μm, thereby obtaining a partition-equipped substrate with the configuration shown in Figure 2.

[0246] Example 70 A 10 cm square alkali-free glass substrate (AGC Technoglass Co., Ltd., thickness 0.7 mm) was used as the base substrate. The light-shielding partition wall forming material obtained in Preparation Example 5 was spin-coated thereon and dried for 3 minutes at a temperature of 100°C using a hot plate (product name SCW-636, Dainippon Screen Mfg. Co., Ltd.) to produce a dry film. The produced dry film was then irradiated with light at an exposure dose of 40 mJ / cm through a photomask using a parallel light mask aligner (product name PLA-501F, Canon Inc.) using an ultra-high pressure mercury lamp as a light source. 2 The film was exposed to 1000 kJ / cm² (g, h, i rays). The film was then developed for 50 seconds with a 0.3 wt % tetramethylammonium aqueous solution using an automatic developing apparatus (Takizawa Sangyo Co., Ltd., "AD-2000 (trade name)"), followed by rinsing with water for 30 seconds. The film was then heated in air at 230°C for 30 minutes using an oven (trade name IHPS-222, Espec Corp.), yielding a substrate with light-shielding partition walls formed on the glass substrate in a grid-like pattern with partition walls measuring 2.0 μm in height, 20 μm in width, and with an OD value of 2.0 per 1.0 μm in thickness, with a pitch of 40 μm on the short side and 280 μm on the long side.

[0247] Thereafter, a substrate with partition walls was obtained in which partition walls, each 10 μm high and 20 μm wide, were formed on the light-shielding partition walls in a lattice pattern similar to that of the light-shielding partition walls, with a pitch of 40 μm on the short side and 280 μm on the long side, in the same manner as in Example 36. The color-changing light-emitting material composition (CL-2) obtained in Preparation Example 2 was applied to the areas separated by the partition walls of the obtained substrate with partition walls using an inkjet method under a nitrogen atmosphere, and dried at 100°C for 30 minutes to form pixels with a thickness of 5.0 μm, thereby obtaining a substrate with partition walls having the configuration shown in FIG.

[0248] Example 71 The color filter-forming material (CF-1) obtained in Preparation Example 4 was applied to the regions separated by the partition walls of a substrate with partition walls before pixel formation, obtained by the same method as in Example 36, so that the film thickness after curing would be 2.5 μm, and then dried under vacuum. The exposure dose was 40 mJ / cm through a photomask designed to expose the regions of the openings of the substrate with partition walls. 2 The resulting film was exposed to radiation (g, h, i rays). After developing for 50 seconds with a 0.3 wt % aqueous tetramethylammonium solution, it was heat-cured at 230°C for 30 minutes, forming a color filter layer with a height of 2.5 μm, a short side of 40 μm, and a long side of 280 μm in the area separated by the partition walls. The color-changing light-emitting material composition (CL-2) obtained in Preparation Example 2 was then applied onto the color filter using an inkjet method under a nitrogen atmosphere and dried at 100°C for 30 minutes to form pixels with a thickness of 5.0 μm, thereby obtaining a substrate with partition walls as shown in FIG.

[0249] Example 72 The low refractive index layer-forming material obtained in Preparation Example 6 was spin-coated on a substrate with partition walls after pixels had been formed in the same manner as in Example 36, and the coating was dried at 100°C for 3 minutes using a hot plate (product name SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.) to produce a dried film. The coating was then heated in air at 90°C for 30 minutes using an oven (product name IHPS-222, manufactured by Espec Corp.) to form a low refractive index layer with a height of 1.0 μm and a refractive index of 1.25, thereby obtaining a substrate with partition walls having the configuration shown in FIG.

[0250] Example 73 A 300 nm thick silicon nitride film, equivalent to an inorganic protective layer I having a height of 50 to 1,000 nm, was formed on the low refractive index layer of the partition-attached substrate obtained in Example 72 using a plasma CVD apparatus (PD-220NL, manufactured by Samco), to obtain a partition-attached substrate having the configuration shown in Figure 7.

[0251] Example 74 A 10 cm square alkali-free glass substrate (AGC Technoglass Co., Ltd., thickness 0.7 mm) was used as the base substrate. The light-shielding partition wall forming material obtained in Preparation Example 5 was spin-coated thereon and dried for 3 minutes at a temperature of 100°C using a hot plate (product name SCW-636, Dainippon Screen Mfg. Co., Ltd.) to produce a dry film. The produced dry film was then irradiated with light at an exposure dose of 40 mJ / cm through a photomask using a parallel light mask aligner (product name PLA-501F, Canon Inc.) using an ultra-high pressure mercury lamp as a light source. 2 The film was exposed to 1000 kJ / cm² (g, h, i rays). The film was then developed for 50 seconds with a 0.3 wt % tetramethylammonium aqueous solution using an automatic developing apparatus (Takizawa Sangyo Co., Ltd., "AD-2000 (trade name)"), followed by rinsing with water for 30 seconds. The film was then heated in air at 230°C for 30 minutes using an oven (trade name IHPS-222, Espec Corp.), yielding a substrate with light-shielding partition walls formed on the glass substrate in a grid-like pattern with partition walls measuring 2.0 μm in height, 20 μm in width, and with an OD value of 2.0 per 1.0 μm in thickness, with a pitch of 40 μm on the short side and 280 μm on the long side.

[0252] Thereafter, the color filter-forming material (CF-1) obtained in Preparation Example 4 was applied to the area separated by the light-shielding partition walls so that the film thickness after curing would be 2.5 μm, and then dried under vacuum. An exposure dose of 40 mJ / cm was applied through a photomask designed to expose the area of ​​the opening of the substrate with partition walls. 2 The resist was exposed to g-, h-, and i-rays. After developing for 50 seconds with a 0.3 wt % aqueous solution of tetramethylammonium, the resist was heat-cured at 230°C for 30 minutes to form a color filter layer with a height of 2.5 μm, a short side of 40 μm, and a long side of 280 μm in the area separated by the partition walls.

[0253] Thereafter, the low refractive index layer-forming material obtained in Preparation Example 6 was spin-coated and dried for 2 minutes at 90°C using a hot plate (trade name SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.) to produce a dried film. Further, the film was heated in air at 90°C for 30 minutes using an oven (trade name IHPS-222, manufactured by Espec Corp.) to form a low refractive index layer having a height of 1.0 μm and a refractive index of 1.25.

[0254] Furthermore, a silicon nitride film having a thickness of 300 nm, which corresponds to an inorganic protective layer I having a height of 50 to 1,000 nm, was formed on the low refractive index layer using a plasma CVD apparatus (PD-220NL, manufactured by Samco Corporation).

[0255] A substrate with partition walls was obtained on top of these, in which partition walls each having a height of 10 μm and a width of 20 μm were formed in a lattice pattern similar to that of the light-shielding partition walls, with a pitch of 40 μm on the short side and 280 μm on the long side, in the same manner as in Example 36. The color-changing light-emitting material composition (CL-2) obtained in Preparation Example 2 was applied to the areas separated by the partition walls of the obtained substrate with partition walls using an inkjet method under a nitrogen atmosphere, and dried at 100°C for 30 minutes to form pixels with a thickness of 5.0 μm, thereby obtaining a substrate with partition walls having the configuration shown in FIG.

[0256] Example 75 A 300-nm-thick silicon nitride film, equivalent to a 50-1,000-nm-thick inorganic protective layer III, was formed on the color filter of a partition-attached substrate, which had a color filter layer with a thickness of 2.5 μm, a short side of 40 μm, and a long side of 280 μm, obtained by the same method as in Example 71, using a plasma CVD apparatus (PD-220NL, manufactured by Samco). Furthermore, the color-changing luminescent material composition (CL-2) obtained in Preparation Example 2 was applied onto the inorganic protective layer III using an inkjet method under a nitrogen atmosphere, and dried at 100°C for 30 minutes to form pixels with a thickness of 5.0 μm, thereby obtaining a partition-attached substrate with the configuration shown in FIG.

[0257] Example 76 A 10 cm square alkali-free glass substrate (AGC Technoglass Co., Ltd., thickness 0.7 mm) was used as the base substrate. A 300 nm thick silicon nitride film, equivalent to an inorganic protective layer IV with a thickness of 50 to 1,000 nm, was formed thereon using a plasma CVD apparatus (PD-220NL, Samco). A substrate with partition walls having the configuration shown in FIG. 12 was obtained in the same manner as in Example 36, except that the above substrate was used instead of the 10 cm square alkali-free glass substrate.

[0258] Example 77 The yellow organic protective layer-forming material (YL-1) obtained in Preparation Example 7 was applied to the color filter of the partition-attached substrate before pixel formation, which had a color filter layer with a thickness of 2.5 μm, a short side of 40 μm, and a long side of 280 μm, obtained by the same method as in Example 71, and then dried under vacuum. The exposure dose was 300 mJ / cm through a photomask designed to expose the opening regions of the partition-attached substrate. 2 The film was exposed to radiation (g, h, i rays). After developing for 50 seconds with a 0.3 wt % aqueous tetramethylammonium solution, it was heat-cured at 230°C for 30 minutes to form a yellow organic protective layer with a thickness of 1.0 μm, a short side of 40 μm, and a long side of 280 μm. Furthermore, the color-changing light-emitting material composition (CL-2) obtained in Preparation Example 2 was applied onto the yellow organic protective layer using an inkjet method under a nitrogen atmosphere and dried at 100°C for 30 minutes to form pixels with a thickness of 5.0 μm, thereby obtaining a substrate with partition walls as shown in FIG. 11.

[0259] Example 78 A 10 cm square alkali-free glass substrate (AGC Technoglass Co., Ltd., thickness 0.7 mm) was used as the base substrate. The yellow organic protective layer-forming material (YL-1) obtained in Preparation Example 7 was coated thereon and dried under vacuum. The dried film was exposed to light at a dose of 300 mJ / cm without using a photomask. 2After exposure to (g, h, i) rays, the film was developed for 50 seconds in a 0.3 wt % tetramethylammonium aqueous solution and then heat-cured at 230°C for 30 minutes to form a yellow organic protective layer with a thickness of 1.0 µm. A substrate with partition walls as shown in Figure 8 was obtained in the same manner as in Example 36, except that the above substrate was used instead of a 10 cm square alkali-free glass substrate. The configurations of the examples and comparative examples are shown in Tables 4 and 5.

[0260] [Table 4]

[0261] [Table 5]

[0262] The evaluation methods used in each of the examples and comparative examples are shown below. <Glass transition temperature of (meth)acrylic polymers and cardo-based polymers> The (meth)acrylic polymer and / or cardo polymer in the resin composition of the present invention used in the examples and comparative examples was calculated from a thermogram obtained using a DSC apparatus (Rigaku's "Thermo Plus DSC8230"). DSC measurements were performed under nitrogen at a heating rate of 20°C / min. The glass transition temperature was calculated as the temperature corresponding to the intersection of the baseline and the tangent at the inflection point in the DSC heating curve of the thermogram. The inflection point was taken as the temperature corresponding to the peak in the DDSC (DSC derivative) curve of the thermogram. The DDSC curve was also referred to as appropriate to confirm the DSC baseline. The glass transition temperature (Tg) was evaluated as "A" when it was 60°C or higher and "B" when it was lower than 60°C.

[0263] <Refractive index of low refractive index layer> The low refractive index layer-forming material used in each example was applied to a silicon wafer using a spinner and dried at 90°C for 2 minutes using a hot plate (product name SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.). The coating was then heated in air at 90°C for 30 minutes using an oven (IHPS-222, manufactured by Espec Corporation) to produce a cured film. A prism coupler (PC-2000, manufactured by Metricon Co., Ltd.) was used to irradiate the cured film surface with light at a wavelength of 550 nm from the perpendicular direction at atmospheric pressure and 20°C, and the refractive index was measured, rounded to two decimal places.

[0264] <Tackless dried film> Using a spin coater (product name 1H-360S, manufactured by Mikasa Co., Ltd.), the partition wall resin composition used in each example and comparative example was spin coated onto a 10 cm square alkali-free glass substrate so that the film would have a dry thickness of 10 μm. The coating was then dried at 100°C for 3 minutes using a hot plate (product name SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.) to produce a dried film with a thickness of 10 μm. A 10 cm square alkali-free glass substrate acting as a mask was placed on top of the dried film for 1 minute, and the tackiness of the dried film was evaluated according to the following criteria. The less adhesion of the glass substrate, the higher the tackiness and the easier it was to handle. A: When the dried film was placed on the glass substrate, it did not stick to the glass substrate, and after the glass substrate was separated, no stains originating from the barrier rib material were left on the glass substrate. B: When the dried film was placed on the glass substrate, it stuck together, but the glass substrate was easily separated. There was a small amount of dirt on the glass substrate from the barrier rib material. C: When the dried film was placed on the glass substrate, it adhered and stuck together. The glass substrate could not be easily separated. After the glass substrate was separated, dirt from the barrier rib material was found on the glass substrate.

[0265] <Crack resistance> The partition wall-forming resin compositions used in each Example and Comparative Example were spin-coated to thicknesses of 10 μm, 15 μm, 20 μm, and 25 μm after heating. Subsequent processes were performed under the same conditions as in each Example and Comparative Example, except that the entire substrate was exposed without a photomask during exposure. Plain films were then produced on glass substrates. The resulting plain films were used as models for the partition walls of the partition-wall-equipped substrates obtained in each Example and Comparative Example. The glass substrates bearing the plain films were visually inspected and evaluated for cracks. If even one crack was observed, it was determined that the film had no crack resistance at that thickness. For example, if no cracks were observed at a film thickness of 15 μm but cracks were observed at a film thickness of 20 μm, the crack-resistant film thickness was determined to be "≧15 μm." Furthermore, if no cracks were observed at 25 μm, the crack-resistant film thickness was determined to be "≧25 μm," and if cracks were observed at 10 μm, the crack-resistant film thickness was determined to be "<10 μm."

[0266] <Wrinkle resistance> The partition wall-forming resin composition used in each Example and Comparative Example was spin-coated to a film thickness of 10 μm, 15 μm, 20 μm, or 25 μm after heating. Subsequent processes were performed under the same conditions as in each Example and Comparative Example, except that the entire substrate was exposed without a photomask during exposure. Plain films were then produced on glass substrates. The resulting plain films were used as models for the partition walls of the partition-wall-equipped substrates obtained in each Example and Comparative Example. The glass substrates bearing the plain films were visually observed and evaluated for the presence or absence of wrinkles. If wrinkles were observed, the film was deemed to have no wrinkle resistance at that film thickness. For example, if there were no wrinkles at a film thickness of 15 μm but wrinkles were present at a film thickness of 20 μm, the wrinkle resistance was assessed as "≧15 μm." Furthermore, if there were no wrinkles even at 25 μm, the wrinkle resistance was assessed as "≧25 μm," and if there were wrinkles even at 10 μm, the wrinkle resistance was assessed as "<10 μm."

[0267] <1% weight loss temperature> The partition-forming resin composition used in each example and comparative example was spin-coated onto a Si wafer to a film thickness of 10 μm after heating. Subsequent processes were performed under the same conditions as in each example and comparative example, except that the entire substrate was exposed without a photomask during exposure, to form a solid film on a glass substrate. Next, a portion of the solid film formed on the Si wafer was carefully scraped off to prevent impurities from being mixed in, and approximately 100 mg of the film was placed in an aluminum cell. Using a thermogravimetric analyzer (TGA-50, manufactured by Shimadzu Corporation), the sample was held at 150°C for 30 minutes in a nitrogen atmosphere, then heated to 400°C at a heating rate of 10°C / min, and the weight was measured. The temperature at which the weight lost 1% by weight from the initial weight was defined as the 1% weight loss temperature. A higher 1% weight loss temperature indicates higher heat resistance.

[0268] <resolution> Using a spin coater (product name 1H-360S, manufactured by Mikasa Co., Ltd.), the resin composition for partition walls used in each of the Examples and Comparative Examples was spin coated onto a 10 cm square alkali-free glass substrate so that the film thickness after heating would be 10 μm, and then using a hot plate (product name SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.), the coating was dried at a temperature of 100°C for 3 minutes to produce a dried film with a film thickness of 10 μm.

[0269] The prepared dried film was exposed to light at a dose of 300 mJ / cm through a mask having line and space patterns with widths of 100 μm, 80 μm, 60 μm, 50 μm, 40 μm, 30 μm, and 20 μm using a parallel light mask aligner (trade name PLA-501F, manufactured by Canon Inc.) and an ultra-high pressure mercury lamp as a light source. 2 The film was exposed to i-line radiation with a gap of 100 μm, and then shower-developed with a 0.045 wt % potassium hydroxide aqueous solution for 100 seconds using an automatic developing apparatus (Takizawa Sangyo Co., Ltd., "AD-2000 (trade name)"), followed by rinsing with water for 30 seconds.

[0270] Using a microscope adjusted to a magnification of 100 times, the developed pattern was observed under magnification, and the narrowest line width among the patterns where no residue was observed in the unexposed area was taken as the resolution. However, when there was also residue in the unexposed area near the 100-μm-wide pattern, it was designated as ">100 μm".

[0271] <Reflectance> For the partition-forming resin compositions used in each example and comparative example, except that the whole was exposed without using a photomask during exposure, they were processed under the same conditions as in each example and comparative example, and a solid film with a height of 10 μm was formed on a glass substrate. Using the obtained solid film as a model of the partition of the partitioned substrate obtained in each example and comparative example, for the glass substrate having the solid film, a spectrophotometer (trade name CM-2600d, manufactured by Konica Minolta Co., Ltd.) was used to measure the reflectance at wavelengths of 350 to 750 nm in the SCI mode from the solid film side, and the value at 550 nm was compared as a representative value. However, when cracks or wrinkles occurred in the solid film, accurate values could not be obtained due to cracks or the like, so the reflectance measurement was not performed.

[0272] <OD value> As a model of the partition of the partitioned substrate obtained in each example and comparative example, in the same manner as the evaluation of reflectance, a solid film with a height of 10 μm was formed on a glass substrate. For the glass substrate having the obtained solid film, an optical densitometer (U-4100 manufactured by Hitachi High-Technologies Corporation) was used to measure the intensities of incident light and transmitted light, and the OD value at wavelengths of 300 to 800 nm was calculated by the above-mentioned formula (1), and the value at 450 nm was compared as a representative value.

[0273] Also, for Example 70, as a model of the light-shielding partition (A-2), a solid film was similarly formed on a glass substrate. For the glass substrate having the obtained solid film, an optical densitometer (U-4100 manufactured by Hitachi High-Technologies Corporation) was used to measure the intensities of incident light and transmitted light, and it was calculated by the above-mentioned formula (1).

[0274] <Taper angle> In each example and comparative example, an arbitrary cross section of the substrate with partition walls before pixel formation was observed using an optical microscope (FE-SEM (S-4800); manufactured by Hitachi, Ltd.) at an accelerating voltage of 3.0 kV, and the taper angle was measured.

[0275] <Line width increase> A 10 cm square alkali-free glass substrate (AGC Technoglass Co., Ltd., thickness 0.7 mm) was used as a base substrate, and the partition wall resin composition used in each Example and Comparative Example was spin-coated thereon, and dried for 3 minutes at a temperature of 100°C using a hot plate (product name SCW-636, Dainippon Screen Mfg. Co., Ltd.) to produce a dried film. The produced dried film was irradiated with a parallel light mask aligner (product name PLA-501F, Canon Inc.) using an ultra-high pressure mercury lamp as a light source through a photomask (design: partition wall width 20 μm, opening short side 80 μm, opening long side 280 μm) at an exposure dose of 100 mJ / cm. 2 and 500 mJ / cm 2 The film was exposed to g-, h-, and i-rays (exposure dose is an i-ray equivalent value). It was then developed for 100 seconds by shower development using an automatic developing apparatus (Takizawa Sangyo Co., Ltd., "AD-2000 (trade name)") with a 0.045 wt % potassium hydroxide aqueous solution, followed by rinsing with water for 30 seconds. It was then heated in air at 230°C for 30 minutes using an oven (trade name IHPS-222, Espec Corp.), forming 10 μm-high partition walls in a grid pattern on the glass substrate.

[0276] The barrier rib pattern was observed under magnification using a microscope adjusted to 100 times, the barrier rib line width was measured, and the exposure dose was 100 mJ / cm 2 and 500 mJ / cm 2 The line widths at the time of development were compared. The line width increase was evaluated according to the following criteria. Note that no evaluation was made when the pattern peeled off during development or when residues were generated making measurement difficult. A: Exposure dose 500 mJ / cm 2 The line width of the partition wall processed with the exposure dose of 100 mJ / cm 2 The difference is within +5.0 μm compared to the line width of the barrier ribs processed in . B: Exposure dose 500 mJ / cm2 The line width of the partition wall processed with the exposure dose of 100 mJ / cm 2 The line width is +5.0 μm to +10 μm compared to the line width of the barrier ribs processed in the above. C: Exposure dose 500 mJ / cm 2 The line width of the partition wall processed with the exposure dose of 100 mJ / cm 2 The line width is +10 μm or more compared to the line width of the barrier ribs processed in the above.

[0277] <Surface contact angle> As in the case of reflectance evaluation, a 10 μm-high solid film was formed on a glass substrate as a model of the partition walls in the partition-wall-equipped substrates obtained in each Example and Comparative Example. The surface contact angle of the resulting solid film was measured at 25°C in air using a DM-700 (manufactured by Kyowa Interface Science Co., Ltd.) and a 22G Teflon-coated needle for contact angle meter (manufactured by Kyowa Interface Science Co., Ltd.) in accordance with the wettability test method for glass substrate surfaces specified in JIS R3257 (established April 20, 1999). However, propylene glycol monomethyl ether acetate was used instead of water, and the contact angle between the solid film surface and propylene glycol monomethyl ether acetate was measured.

[0278] <Inkjet coating properties> In the substrates with partition walls obtained in each Example and Comparative Example before pixel formation, PGMEA was used as ink to inkjet coat the pixel areas surrounded by the lattice-shaped partition walls using an inkjet coater (InkjetLabo, manufactured by Cluster Technology Co., Ltd.). 160 pL of PGMEA was applied per lattice pattern, and the presence or absence of breakage (a phenomenon in which ink overcomes the partition walls and mixes into adjacent pixel areas) was observed, and the inkjet coatability was evaluated according to the following criteria. Fewer breakages indicate higher liquid repellency and superior inkjet coatability. A: The ink did not overflow from within the pixels. B: In some areas, ink overflowed from within the pixels onto the top surface of the partition wall. C: Ink overflowed from within the pixels onto the top surface of the partition walls over the entire surface.

[0279] <height> For the partition-attached substrates obtained in each example and comparative example, the height of the structures before and after pixel (B) formation was measured using a SURFCOM stylus film thickness measurement device, and the difference was calculated to measure the height of the pixel (B). For Examples 72 to 74, the film thickness of the low-refractive-index layer (C) was also measured. For Examples 71, 74-75, and 77, the film thickness of the color filter was also measured. For Examples 70 and 74, the thickness (height) of the light-shielding partition was also measured. For Examples 77 and 78, the thickness (height) of the yellow organic protective layer was also measured. Furthermore, for Examples 73 to 76, a polishing device such as a cross-section polisher was used to expose a cross section perpendicular to the base substrate, and the cross section was then magnified and observed with a scanning electron microscope or transmission electron microscope to measure the height of the inorganic protective layer.

[0280] <Brightness> A surface light-emitting device equipped with a commercially available LED backlight (peak wavelength 465 nm) was used as a light source, and the partition-equipped substrates obtained in each example and comparative example were placed so that the pixel section was on the light source side. A current of 30 mA was passed through this surface light-emitting device to light up the LED elements, and the luminance (unit: cd / m ) based on the CIE 1931 standard was measured using a spectroradiometer (CS-1000, manufactured by Konica Minolta). 2 ) was measured and used as the initial luminance. However, the luminance was evaluated as a relative value with the initial luminance of Example 67 set as the standard 100. Furthermore, after the LED element was lit for 48 hours at room temperature (23°C), the luminance was measured in the same manner and the change in luminance over time was evaluated. However, the luminance was evaluated as a relative value with the initial luminance of Example 67 set as the standard 100.

[0281] <Color characteristics> The partition-equipped substrates obtained in each Example and Comparative Example were placed on a commercially available white reflector so that the pixels were positioned on the white reflector side. Using a spectrophotometer (CM-2600d, manufactured by Konica Minolta, Inc., measurement diameter φ8 mm), light was irradiated from the base substrate side of the partition-equipped substrate, and the spectrum including the specular reflection light was measured.

[0282] The color gamut defined by the color standard BT.2020, which can reproduce nearly all colors in nature, is defined as the three primary colors red, green, and blue on the spectral locus shown in a chromaticity diagram, with the wavelengths of red, green, and blue corresponding to 630 nm, 532 nm, and 467 nm, respectively.The emitted color of the pixel was evaluated using the reflectance (R) of the obtained reflection spectrum at three wavelengths: 470 nm, 530 nm, and 630 nm, according to the following criteria. A:R 530 / (R 630 +R 530 +R 470 ) ≧ 0.55 B:R 530 / (R 630 +R 530 +R 470 )<0.55.

[0283] <Display characteristics> The display characteristics of the display devices fabricated by combining the substrates with partition walls obtained in each of the Examples and Comparative Examples with the organic EL elements were evaluated based on the following criteria. A: The green display is very vivid and has excellent contrast. B: Although the colors appear somewhat unnatural, the display device is problem-free.

[0284] <Color mixture> In the substrates with partition walls obtained in each Example and Comparative Example before pixel formation, color-converting luminescent material composition (CL-2) was applied by inkjet printing to a part of the pixel area surrounded by the lattice-shaped partition walls, and dried at 100°C for 30 minutes to form pixels with a thickness of 5.0 μm. Thereafter, color-converting luminescent material composition (CL-3) was applied by inkjet printing to an area of ​​the pixel area surrounded by the lattice-shaped partition walls adjacent to the area where color-converting luminescent material composition (CL-2) was applied, and dried at 100°C for 30 minutes to form pixels with a thickness of 5.0 μm.

[0285] Separately, a blue organic EL cell having the same width as the pixel portion surrounded by the grid-like partition walls was fabricated, and the aforementioned substrate with partition walls and the blue organic EL cell were bonded together with a sealant, facing each other, to obtain a display device with the configuration shown in Figure 15. Among the blue organic EL cells 11 in Figure 15, only the blue organic EL cell bonded directly below pixel 3 (CL-2) formed with color-converting luminescent material composition (CL-2) was turned on. The absorbance intensity A (630 nm) at a wavelength of 630 nm was measured for pixel 3 (CL-3) formed with color-converting luminescent material composition (CL-3) using an LVmicro-V microspectrophotometer (manufactured by Lambda Vision Corporation). The smaller the value of absorbance intensity A (630 nm), the less likely color mixing occurred. Color mixing was evaluated according to the following criteria. A:A(630nm)<0.01 B: 0.01≦A(630nm)≦0.5 C:0.5 <A(630nm)。

[0286] The evaluation results of each example and comparative example are shown in Tables 6 and 7.

[0287] [Table 6]

[0288] [Table 7] [Explanation of symbols]

[0289] 1. Base substrate 2 Bulkhead 3 pixels 3 (CL-2) Pixels formed with color-changing light-emitting material composition (CL-2) 3 (CL-3) Pixels formed with color-changing light-emitting material composition (CL-3) 4 Shade partition wall 5 Color Filters 6 Low refractive index layer 7 Inorganic protective layer I 8 Inorganic protective layer II 9 Inorganic protective layer III and / or yellow organic protective layer 10 Inorganic protective layer IV and / or yellow organic protective layer 11 Light emitting sources selected from OLED cells, mini LED cells and micro LED cells 12 Blue organic EL cells H Partition thickness L Bulkhead width θ Taper angle

Claims

1. (i) a photoradical generator; (ii) a hindered phenol compound and / or a hindered amine compound; (iii) a polysiloxane containing a structure having an aromatic ring represented by the following general formula (1) or (2) and a structure having a photoradical polymerizable group represented by the following general formula (3), (iv) A resin composition containing a (meth)acrylic polymer having a structure with an aromatic ring represented by the following general formula (4) and a structure with a photoradical polymerizable group represented by the following general formula (5) and / or a cardo polymer having a structure represented by the following general formula (6) or the following general formula (7) and a photoradical polymerizable group, wherein the ratio of the weight of the polysiloxane to the total weight of the (meth)acrylic polymer and the cardo polymer is 30 / 70 to 70 / 30. 【Chemistry 1】 (In general formulas (1) to (7), R １ and R ２ R each independently represents hydrogen, a hydroxy group, a group having a siloxane bond, or a monovalent organic group having 1 to 30 carbon atoms. ３ and R ４ R each independently represents hydrogen, a hydroxyl group, or a monovalent organic group having 1 to 30 carbon atoms. ５ ~R ７ are each independently hydrogen, a monovalent organic group having 1 to 30 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an adjacent R ５ ~R ７ R represents a group that forms an aromatic ring together. ８ represents hydrogen, a monovalent organic group having 1 to 30 carbon atoms, or an aryl group having 6 to 20 carbon atoms. １ , X ２ , X ３ and X ４ each independently represents an organic group having an aromatic ring. １ and Y ２ each independently represents an organic group having a photoradical polymerizable group. p, q, and r each independently represent an integer of 0 to 2, and s represents an integer of 1 or 2. a, b, c, d, e, f, and g each independently represent an integer of 1 or greater. When a to e are 2 or more, multiple R １ , R ２ , R ３ , R ４ , R ５ , R ６ , R ７ , R ８ , X １ , X ２ , X ３ , X ４ , Y １ and Y ２ may be the same or different.)

2. 2. The resin composition according to claim 1, wherein the hindered phenol compound is a hindered phenol compound having two or more hindered phenol groups in one molecule.

3. 3. The resin composition according to claim 1, wherein the hindered amine compound is a piperidine compound.

4. 3. The resin composition according to claim 1, wherein the hindered amine compound is a piperidine compound having a photopolymerizable group.

5. The resin composition according to claim 1 or 2, wherein the weight average molecular weight of the polysiloxane is 5,000 to 300,000, and the polysiloxane contains, of all repeating units, 30 to 70 mol% of repeating units represented by general formula (1) or (2) and 15 to 70 mol% of repeating units represented by general formula (3).

6. 3. The resin composition according to claim 1, wherein the (meth)acrylic polymer and / or the cardo polymer has a glass transition temperature of 60[deg.] C. or higher.

7. 3. The resin composition according to claim 1, further comprising at least one of a white pigment, a light-shielding pigment, and an organometallic compound containing at least one metal selected from the group consisting of silver, gold, platinum, and palladium.

8. 3. The resin composition according to claim 1, wherein the photoradical generator comprises an oxime ester compound and a phosphine oxide compound.

9. 3. The resin composition according to claim 1, further comprising a liquid-repellent compound having a photopolymerizable group.

10. A light-shielding film obtained by curing the resin composition according to claim 1 or 2.

11. A partition-wall-equipped substrate having partition walls (A-1) patterned on a base substrate using the resin composition according to claim 1 or 2, wherein the partition walls have a reflectance of 10% to 60% per 10 μm thickness at a wavelength of 550 nm and an OD value of 1.0 to 3.0 per 10 μm thickness at a wavelength of 450 nm.

12. The partition-wall-equipped substrate according to claim 11, wherein the partition walls (A-1) formed into a pattern contain a resin, a white pigment, and a light-shielding pigment, and the light-shielding pigment is a pigment selected from titanium nitride, zirconium nitride, carbon black, a mixed pigment of a red pigment and a blue pigment in a weight ratio of 20 / 80 to 80 / 20, and particles of at least one metal oxide or metal selected from the group consisting of palladium oxide, platinum oxide, gold oxide, silver oxide, palladium, platinum, gold, and silver.

13. 12. The substrate with partition walls according to claim 11, wherein the partition walls (A-1) formed in a pattern further contain a hindered amine compound.

14. The substrate with partition walls according to claim 11, further comprising (A-2) a patterned light-shielding partition wall having an OD value per 1.0 μm thickness of 0.5 or more between the base substrate and the patterned partition wall (A-1).

15. 12. The substrate with partition walls according to claim 11, further comprising pixel layers (B) arranged and separated by the patterned partition walls (A-1).

16. A display device comprising the partition-attached substrate according to claim 11 and a light-emitting source selected from the group consisting of a liquid crystal cell, an organic EL cell, a mini LED cell, and a micro LED cell.

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