Indication device

Abstract

To provide a display device that prevents light leakage at the edges and can deliver high-quality images. [Solution] The present disclosure provides a display device comprising a plurality of first flatness-enhancing patterns located between a display area and a stopper, a plurality of lenses, a stopper, and a flattening layer covering the plurality of first flatness-enhancing patterns, wherein the non-display area comprises a first non-display area located in a first direction from the display area and a second non-display area located in a second direction from the display area, and the plurality of first flatness-enhancing patterns are convex patterns located on an insulating film or concave patterns formed on an insulating film, located in the first non-display area.

Description

[Technical Field]

[0001] This disclosure relates to a display device, and more particularly to a display device that can prevent light leakage at the edges and provide high-quality images. [Background technology]

[0002] With the increasing size of display devices, there is a growing demand for flat-panel displays that occupy less space. As one example of such flat-panel displays, liquid crystal display devices (LCDs), organic light-emitting display devices (Organic Light Emitting Display Devices), and inorganic light-emitting display devices (Inorganic Light Emitting Display Devices) equipped with organic light-emitting diodes have been developed and are being adopted in a variety of fields.

[0003] For example, in an organic light-emitting device, holes injected from the anode and electrons injected from the cathode combine in the organic light-emitting layer to form excitons, resulting in an unstable excited state. Light is emitted when the device returns from this state to a stable ground state. [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] Conventional display devices have limitations in controlling the viewing angle and improving light efficiency. Therefore, the present invention aims to provide a display device that can improve the control of the viewing angle and / or light efficiency. [Means for solving the problem]

[0005] To solve the aforementioned problems, the present disclosure provides a display device comprising: a substrate including a display area and a non-display area surrounding the display area; a light-emitting diode corresponding to the display area and located on the upper part of the substrate; an insulating film covering the light-emitting diode and located in the display area and the non-display area; a plurality of lenses corresponding to the display area and located on the insulating film; a stopper corresponding to the non-display area and located on the insulating film; a plurality of first flatness-improving patterns located between the display area and the stopper; and a flattening layer covering the plurality of lenses, the stopper, and the plurality of first flatness-improving patterns, wherein the non-display area includes a first non-display area located in a first direction from the display area and a second non-display area located in a second direction from the display area, and the plurality of first flatness-improving patterns are convex patterns located in the first non-display area and located on the insulating film, or concave patterns formed on the insulating film.

[0006] In the display device of this disclosure, the plurality of first flatness-improving patterns are characterized in that they are spaced apart from each other in the first direction and the second direction.

[0007] The display device of this disclosure is characterized in that the lens has a major axis in the first direction and a minor axis in the second direction.

[0008] The display device of the present disclosure further includes a plurality of second flatness-improving patterns located between the display area and the stopper in the second non-display area, characterized in that the density of the plurality of first flatness-improving patterns is greater than the density of the plurality of second flatness-improving patterns.

[0009] The display device of the present disclosure further includes a plurality of third flatness-enhancing patterns located at the corner between the first non-display area and the second non-display area, wherein the density of the plurality of third flatness-enhancing patterns is less than the density of the plurality of first flatness-enhancing patterns and greater than the density of the plurality of second flatness-enhancing patterns.

[0010] In the display device of this disclosure, each of the plurality of first flatness-improving patterns is characterized in that it has a major axis in the first direction and a minor axis in the second direction.

[0011] The display device of the present disclosure further includes a plurality of second flatness-improving patterns located between the display area and the stopper in the second non-display area, wherein the plurality of second flatness-improving patterns have a major axis in the second direction and a minor axis in the first direction.

[0012] The display device of the present disclosure further includes a plurality of third flatness-enhancing patterns located at the corner between the first non-display area and the second non-display area, wherein the plurality of third flatness-enhancing patterns have a major axis in a third direction intersecting the first direction and the second direction.

[0013] The display device of the present disclosure further includes a plurality of second flatness-improving patterns located between the display area and the stopper in the second non-display area, characterized in that the height of the plurality of first flatness-improving patterns is greater than the height of the plurality of second flatness-improving patterns.

[0014] The display device of the present disclosure further includes a plurality of third flatness-enhancing patterns located at the corner between the first non-display area and the second non-display area, wherein the height of the plurality of third flatness-enhancing patterns is less than the height of the plurality of first flatness-enhancing patterns and greater than the height of the plurality of second flatness-enhancing patterns.

[0015] The display device of the present disclosure further includes a plurality of second flatness-improving patterns located between the display area and the stopper in the second non-display area, wherein the depth of the plurality of first flatness-improving patterns is greater than the depth of the plurality of second flatness-improving patterns.

[0016] The disclosed display device further includes a plurality of third flatness-enhancing patterns located at the corner between the first non-display area and the second non-display area, wherein the depth of the plurality of third flatness-enhancing patterns is less than the depth of the plurality of first flatness-enhancing patterns and greater than the depth of the plurality of second flatness-enhancing patterns.

[0017] The display device of this disclosure further includes a first dam located outside the stopper, wherein the flattening layer extends to the dam.

[0018] The display device of the present disclosure further includes a second dam located between the first dam and the stopper, and a capsule sealing layer covering the second dam and located below the insulating film, wherein the capsule sealing layer has a structure in which a first inorganic film, an organic film and a second inorganic film are laminated, each of the first inorganic film and the second inorganic film covering the second dam, the organic film being spaced apart from the second dam, and the planarization layer between the second dam and the capsule sealing layer being thicker than the planarization layer in the display area.

[0019] The display device of this disclosure is characterized in that the density of the plurality of first flatness-improving patterns is greater than the density of the plurality of lenses.

[0020] The display device of the present disclosure is characterized in that each of the plurality of first flatness-improving patterns is a convex pattern, each of the plurality of first flatness-improving patterns has a first height, and each of the plurality of lenses has a second height greater than the first height.

[0021] The display device of this disclosure is characterized in that the stopper has a third height that is greater than the first height and equal to or less than the second height.

[0022] In the display device of the present disclosure, the plurality of first flatness improvement patterns are characterized in that they have a first distance from the display area and a second distance smaller than the first distance from the stopper. The display device according to claim 1.

[0023] The display device of the present disclosure further includes, in the second non-display area, a plurality of second flatness improvement patterns located between the display area and the stopper, and a plurality of third flatness improvement patterns located at the corners between the first non-display area and the second non-display area. Each of the plurality of first flatness improvement patterns, the plurality of second flatness improvement patterns, and the plurality of third flatness improvement patterns is the convex pattern, and the plurality of first flatness improvement patterns, the plurality of second flatness improvement patterns, and the plurality of third flatness improvement patterns are characterized in that they show a difference in at least one of density, arrangement direction, and height.

[0024] The display device of the present disclosure further includes, in the second non-display area, a plurality of second flatness improvement patterns located between the display area and the stopper, and a plurality of third flatness improvement patterns located at the corners between the first non-display area and the second non-display area. Each of the plurality of first flatness improvement patterns, the plurality of second flatness improvement patterns, and the plurality of third flatness improvement patterns is the concave pattern, and the plurality of first flatness improvement patterns, the plurality of second flatness improvement patterns, and the plurality of third flatness improvement patterns are characterized in that they show a difference in at least one of density, arrangement direction, and depth.

Advantages of the Invention

[0025] [ In addition to the structure in which a flattening layer for flattening the lens is provided, the display device of the present disclosure includes flatness improvement patterns in the non-display area to increase the flow rate of the solution for forming the flattening layer.

[0026] As a result, the lens improves the adjustment of the field of view and / or the light efficiency, and the planarizing layer protects the lens while covering it, providing a flat surface. In other words, the flatness of the planarizing layer is improved, resulting in a low-power drive effect that improves the adjustment of the field of view and / or the light efficiency without light leakage.

[0027] Furthermore, the convex flatness-improving pattern includes a first flatness-improving pattern located in a first non-display area in a first direction from the display area, a second flatness-improving pattern located in a second non-display area in a second direction from the display area, and a third flatness-improving pattern located in a third non-display area which is the corner between the first and second non-display areas. The first, second, and third flatness-improving patterns differ in at least one of the following: density, arrangement direction, and height, thereby further improving the flatness of the flattening layer throughout the display device.

[0028] Furthermore, the concave flatness-enhancing pattern includes a first flatness-enhancing pattern located in a first non-display area in a first direction from the display area, a second flatness-enhancing pattern located in a second non-display area in a second direction from the display area, and a third flatness-enhancing pattern located in a third non-display area which is the corner between the first and second non-display areas. The first, second, and third flatness-enhancing patterns differ in at least one of the following: density, arrangement direction, and depth, thereby further improving the flatness of the flattening layer throughout the display device. [Brief explanation of the drawing]

[0029] [Figure 1] This figure schematically shows the organic light-emitting display device according to the present invention. [Figure 2] This is a schematic circuit diagram showing the organic light-emitting display device according to the present invention. [Figure 3] This is a schematic cross-sectional view showing an organic light-emitting display device according to the first embodiment of the present invention. [Figure 4] This is a schematic cross-sectional view showing an organic light-emitting display device according to a second embodiment of the present invention. [Figure 5] This is a schematic cross-sectional view showing one pixel region within the display area of ​​an organic light-emitting display device according to a second embodiment of the present invention. [Figure 6] This is a schematic plan view showing a part of an organic light-emitting device according to a second embodiment of the present invention. [Figure 7] This is a schematic plan view showing a part of an organic light-emitting device according to a second embodiment of the present invention. [Figure 8] This is a schematic plan view showing a part of an organic light-emitting device according to a second embodiment of the present invention. [Figure 9] This is a schematic cross-sectional view showing a part of an organic light-emitting device according to a second embodiment of the present invention. [Figure 10] This is a schematic cross-sectional view showing an organic light-emitting display device according to a third embodiment of the present invention. [Modes for carrying out the invention]

[0030] The terminology used in the embodiments of this invention has been selected, as far as possible, to be common terms widely used today, but may differ depending on the intent of the articulators, case law, the emergence of new technologies, etc. Where the applicant has arbitrarily selected specific terms, their meanings will be detailed. Therefore, terms used herein should be defined based on their meaning and the overall content of this disclosure.

[0031] Throughout the specification, where any part is described as "including" or "comprising" a component, unless otherwise specified, this does not exclude other components, but rather may include other components.

[0032] Throughout the specification, the expression "at least one of a, b, and c" may encompass "a alone," "b alone," "c alone," "a and b," "a and c," "b and c," or "all of a, b, and c." The advantages and features of the present invention, and how they are achieved, will become clearer with reference to the embodiments detailed with the drawings.

[0033] The shapes, areas, ratios, angles, and quantities disclosed in the drawings illustrating embodiments of the present invention are illustrative and the present invention is not limited thereto. When describing embodiments, if a specific explanation of related prior art is deemed to obscure the gist of the present invention, such detailed explanation will be omitted.

[0034] Wherever "equipped," "included," "possessed," "have," or "become" is used in this specification, other parts may be added. Furthermore, where a component is described in the singular form, it may be interpreted as plural unless otherwise explicitly stated. In interpreting components, a margin of error is included even without explicit mention.

[0035] For example, when describing the positional relationship between two components using terms such as "above," "above," "below," or "beside," one or more other components may be located between those two components. When an element or layer is described as "on" another element or layer, this includes all cases where another layer or other element is directly above or between it and the other element.

[0036] Furthermore, while terms such as "first" and "second" are used to distinguish the components, the components are not limited to these terms. Therefore, the first component mentioned below may also be the second component within the technical concept of the present invention.

[0037] The area, length, and thickness of each component described in the specification are illustrated for illustrative purposes only and do not necessarily limit the present invention to them.

[0038] The features of each of the multiple embodiments of the present invention can be combined or integrated partially or entirely, enabling a wide range of technically diverse interconnections and drives. Furthermore, each embodiment can be implemented independently of or in conjunction with one another.

[0039] Furthermore, the terms described later are defined in consideration of their function in implementing the present invention, and may differ depending on the intent or conventions of the user or operator. Therefore, these terms should be defined based on the overall content of this specification.

[0040] Unless otherwise specified, the transistors constituting the pixel circuit of the present invention may include at least one of the following: oxide thin film transistors (Oxide TFTs), amorphous silicon TFTs (a-Si TFTs), and low-temperature polysilicon TFTs (Low Temperature Polysilicon TFTs (LTPS TFTs).

[0041] The following embodiments will primarily describe organic light-emitting devices. However, the embodiments of the present invention are not limited to organic light-emitting devices, and can also be used in inorganic light-emitting devices containing inorganic light-emitting materials, or in micro-LED devices. For example, the embodiments of the present invention can also be used in quantum dot devices. That is, the device of the present invention may be an organic light-emitting device containing an organic light-emitting diode, a quantum dot light-emitting device containing a quantum dot light-emitting diode, or a micro-LED device containing a micro-LED.

[0042] Expressions such as "First," "Second," and "Third" are terms used to distinguish the configuration of each embodiment, and the embodiments are not limited to these terms. Therefore, the same term may refer to different configurations depending on the embodiment.

[0043] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

[0044] Figure 1 is a schematic diagram showing the organic light-emitting display device according to the present invention, and Figure 2 is a schematic circuit diagram showing the organic light-emitting display device according to the present invention.

[0045] As shown in Figures 1 and 2, the organic light-emitting display device according to an embodiment of the present invention comprises a timing control unit 120, a data drive unit 122, a first gate drive unit 124, a second gate drive unit 126, and a display panel 128.

[0046] The timing control unit 120 can generate video data, data control signals, and gate control signals using multiple timing signals such as video signals, data enable signals, horizontal synchronization signals, vertical synchronization signals, and clock signals input from an external system (not shown). The timing control unit 120 also inputs the generated video data and data control signals to the data drive unit 122, and the generated gate control signals to the first gate drive unit 124 and the second gate drive unit 126.

[0047] The data drive unit 122 generates a data signal (data voltage) Vda using the data control signal and video data input from the timing control unit 120, and applies the generated data signal to the data wiring DL of the display panel 128.

[0048] The first gate drive unit 124 and the second gate drive unit 126 generate gate signals (gate voltages, Vsc and Vse in Figure 2) using gate control signals input from the timing control unit 120, and apply the generated gate signals Vsc and Vse to the gate wiring GL of the display panel 128.

[0049] Here, the first gate drive unit 124 and the second gate drive unit 126 are formed together on the substrate of the display panel 128, where the gate wiring GL, data wiring DL, and pixel areas P1, P2, P3, and P4 are formed, and may be of the gate-in-panel (GIP) type, positioned in the non-display area NDA.

[0050] In Figure 1, the first gate drive unit 124 and the second gate drive unit 126 are shown as an example in which they are arranged on both sides of the display panel 128, but in other embodiments, one gate drive unit may be arranged on one side of the display panel 128.

[0051] The display panel 128 includes a central display area DA and a non-display area NDA surrounding the display area DA, and displays video using gate signals Vsc, Vse and data signal Vda.

[0052] In the display panel 128, the gate wiring GL and data wiring DL intersect each other, defining the first pixel region P1 to the fourth pixel region P4. For example, each of the first pixel region P1 to the fourth pixel region P4 may be a red pixel region, a green pixel region, a blue pixel region, or a white pixel region.

[0053] Each of the first pixel region P1 to the fourth pixel region P4 may include a switching transistor Tsw, a driving transistor Tdr, a sensing transistor Tse, a storage capacitor Cst, and a light-emitting diode D.

[0054] Although the example uses a case where the switching transistor Tsw, the driving transistor Tdr, and the sensing transistor Tse are all negative (N) type, in other embodiments, at least one of the switching transistor Tsw, the driving transistor Tdr, and the sensing transistor Tse may be positive (P) type.

[0055] The switching transistor Tsw can be switched by a scan signal Vsc applied via the gate wiring GL, and can transmit a data signal Vda to the first node N1.

[0056] The drive transistor Tdr is switched by the voltage at the first node N1 and can transmit a high-potential signal (high-potential voltage) Vdd to the second node N2.

[0057] The sensing transistor Tse is switched by a sensing signal (sensing voltage) Vse and can transmit a reference signal (reference voltage) Vre to the second node N2, or transmit the voltage of the second node N2 to the reference wiring.

[0058] The storage capacitor Cst can maintain the data signal Vda supplied to the first node N1 for one frame and store the threshold voltage Vth of the drive transistor Tdr.

[0059] The first and second capacitor electrodes of the storage capacitor Cst may be connected to the first node N1 and the second node N2, respectively.

[0060] The light-emitting diode D can emit light with a brightness proportional to the current of the driving transistor Tdr.

[0061] The anode of light-emitting diode D is connected to the second node N2, and the cathode of light-emitting diode D is connected to the power supply wiring and can receive a low-potential signal Vss.

[0062] In this way, by driving the circuits within the pixel regions P1, P2, P3, and P4, the light-emitting diode D can display an image having a brightness corresponding to the video data.

[0063] Figure 3 is a schematic cross-sectional view showing an organic light-emitting display device according to a first embodiment of the present invention.

[0064] As shown in Figure 3, the organic light-emitting display device 100 includes a substrate containing a display device DA and a non-display area NDA, a light-emitting diode D corresponding to the display area DA and located on the upper part of the substrate 102, an organic interlayer insulating film 170 located on the upper part of the light-emitting diode D, a plurality of lenses 180 corresponding to the display area DA and located on the organic interlayer insulating film 170, a stopper 182 corresponding to the non-display area NDA and located on the organic interlayer insulating film 170, and a second planarization layer 184 covering the plurality of lenses 180.

[0065] Multiple pixel regions are defined on the substrate 102. The substrate 102 may be a glass substrate or a plastic substrate.

[0066] A first buffer layer 106 is provided on top of the substrate 102. The first buffer layer 106 functions to block moisture and oxygen from the outside. A pixel circuit layer 108 corresponding to the display area DA, a gate drive unit GIP corresponding to the non-display area NDA, and signal wiring 109 are located on the first buffer layer 106. The gate drive unit GIP may be located between the display area DA and the signal wiring 109.

[0067] For example, the pixel circuit layer 108 may include a switching thin-film transistor, a driving thin-film transistor, and a sensing transistor. Furthermore, the signal wiring 109 may include low-potential signal wiring that supplies a low-potential signal Vss.

[0068] A first planarization layer 150, which covers the pixel circuit layer 108 and the gate drive unit GIP, is provided on top of the first buffer layer 106. The first planarization layer 150 can cover a portion of the signal wiring 109.

[0069] Light-emitting diodes D and banks 156 are arranged on the planarization layer 150. The light-emitting diodes D correspond to each pixel area in the display area DA, and banks 156 correspond to the boundaries of the pixel areas. Bank 156 may extend into a portion of the non-display area NDA. Bank 156 may also contain light-absorbing particles (e.g., black particles) and have light-absorbing properties.

[0070] The non-display area (NDA) contains the first dam (DAM1) and the second dam (DAM2). Each of the first dam (DAM1) and the second dam (DAM2) is a sealed rectangular ring shape surrounding the display area (DA).

[0071] The first dam DAM1 is located between the display area DA and the second dam DAM2. Parts of the first dam DAM1 and each of the second dam DAM2 are located on the first buffer layer 106, and other parts of the first dam DAM1 may be located on the signal wiring 109.

[0072] A capsule sealing layer 162 is positioned above the light-emitting diode D and bank 156 to suppress moisture penetration. The capsule sealing layer 162 covers the first dam DAM1 and the second dam DAM2 in the non-display area (NDA).

[0073] The capsule sealing layer 162 may have a multilayer structure including a first inorganic layer 162a, an organic layer 162b, and a second inorganic layer 162c arranged sequentially.

[0074] The organic layer 162b is formed in the region surrounded by the first dam DAM1, while the first inorganic layer 162a and the second inorganic layer 162c each cover the first dam DAM1 and the second dam DAM2, forming across the entire surface of the substrate 102. Therefore, the sides of the organic layer 162b are covered by the second inorganic layer 162c.

[0075] On the capsule sealing layer 162, a second buffer layer 164 is provided across the entire surface of the substrate 102. The second buffer layer 164 serves to block moisture or oxygen from the outside.

[0076] On the second buffer layer 164, a black matrix 168 is provided corresponding to the space between light-emitting diodes D. That is, the black matrix 168 corresponds to the boundary of a pixel region. Bank 156 corresponds to a pixel region and has a first aperture, and the black matrix 168 corresponds to a pixel region and may have a second aperture that is larger than the first aperture.

[0077] Although not shown in Figure 3, a color filter layer can be provided on the second buffer layer 164, corresponding to the pixel region.

[0078] An organic interlayer insulating film 170 is provided across the entire surface of the substrate 102, covering the black matrix 168. The organic interlayer insulating film 170 can be formed from an organic insulating material such as photoacrylic or benzocyclobutene (BCB).

[0079] A touch electrode 172 is provided on the organic interlayer insulating film 170, corresponding to the display area DA. The touch electrode 172 is positioned corresponding to the black matrix 168. An inorganic insulating film 174 is provided on the touch electrode 172. Since the inorganic insulating film 174 has a smaller area than the substrate 102, the organic interlayer insulating film 170 can be exposed at the edges of the substrate 102.

[0080] Multiple lenses 180 and stoppers 182 are located on an inorganic insulating film 174. A third dam DAM3 is provided on an organic interlayer insulating film 170 exposed by the inorganic insulating film 174. The multiple lenses 180 are located in the display area DA. Each of the stoppers 182 and the third dam DAM3 is located in the non-display area NDA, with the stoppers 182 positioned between the third dam DAM3 and the multiple lenses 180.

[0081] Multiple lenses 180, stoppers 182, and the third dam DAM3 can be formed from the same material.

[0082] A second planarization layer 184 is provided on the upper part of the substrate 102 to cover and flatten the multiple lenses 180. The second planarization layer 184 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. The organic insulating material constituting the lenses 180 has a first refractive index, and the organic insulating material constituting the second planarization layer 184 has a second refractive index smaller than the first refractive index.

[0083] The display device 100 of the present invention is equipped with a plurality of lenses 180 above the light-emitting diode D. As a result, the control of the viewing angle of the displayed image and the light efficiency of the light-emitting diode D can be improved.

[0084] Furthermore, the second flattening layer 184 flattens multiple lenses 180.

[0085] However, as shown in Figure 3, the second flattening layer 184 does not extend beyond the stopper 182 and reach the third dam DAM3, resulting in a problem where the second flattening layer 184 protrudes in the region A adjacent to the stopper 182 and is not flattened. In other words, after the solution for forming the second flattening layer 184 is dropped onto the display region DA, it should spread toward the non-display region NDA, forming a second flattening layer 184 with a flat surface. However, between the display region DA and the stopper 182, the rate at which the solution spreads slows down, and the solution cannot extend beyond the stopper 182. As a result, it accumulates in A before the stopper 182, causing the problem of protrusion.

[0086] The protruding portion of the second planarization layer 184 acts as a lens, resulting in a problem of light leakage in the non-display area.

[0087] Figure 4 is a schematic cross-sectional view showing an organic light-emitting display device according to a second embodiment of the present invention, and Figure 5 is a schematic cross-sectional view showing a pixel area of ​​an organic light-emitting display device according to a second embodiment of the present invention. Referring to Figures 4 and 5, the organic light-emitting display device 200 includes a substrate 202 including a display device DA and a non-display area NDA, a light-emitting diode D corresponding to the display area DA and located on the upper part of the substrate 202, an organic interlayer insulating film 270 located on the upper part of the light-emitting diode D, a plurality of lenses 280 corresponding to the display area DA and located on the organic interlayer insulating film 270, a stopper 282 and a flatness-improving pattern 290 corresponding to the non-display area NDA and located on the organic interlayer insulating film 270, and a second planarization layer 284 covering the plurality of lenses 280, the planarization-improving pattern 290, and the stopper 282.

[0088] Multiple pixel regions P are defined on the substrate 202. The substrate 202 may be a glass substrate or a plastic substrate. For example, the substrate 202 may be any one of the following: a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylene naphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, or a polycarbonate (PC) substrate.

[0089] In one embodiment of the present invention, the substrate 202 may have a three-layer structure including a first polyimide film, a second polyimide film, and an interlayer inorganic film between the first and second polyimide films. The interlayer inorganic film may be silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ).

[0090] On the first buffer layer 206, a pixel circuit layer 208 corresponding to the display area DA, a gate drive unit GIP corresponding to the non-display area NDA, and signal wiring 209 are located. The gate drive unit GIP may be located between the display area DA and the signal wiring 209.

[0091] Referring to Figure 5, the stacked structure of the display device 200, which includes a pixel circuit layer 208 in the display area, will be specifically described.

[0092] A first light-shielding pattern 204 is placed on the substrate 202. The first light-shielding pattern 204 serves to block light incident from below the substrate 202. For example, the first light-shielding pattern 204 can be formed from a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may be a single-layer or multi-layer structure.

[0093] A first buffer layer 206 is provided on the top of the substrate 202, covering the first light-shielding pattern 204. The first buffer layer 206 serves to block moisture and oxygen from the outside. For example, the first buffer layer 206 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from an inorganic insulating material such as ), and may have a single-layer structure or a multilayer structure. If the first light-shielding pattern 204 is omitted, the first buffer layer 206 may be formed in contact with the entire surface of the substrate 202.

[0094] A first semiconductor layer 210 corresponding to the first light-shielding pattern 204 is arranged on the first buffer layer 206. The first semiconductor layer 210 may include any one of a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material. If the first light-shielding pattern 204 and the first buffer layer 206 are omitted, the first semiconductor layer 210 may be formed directly on the substrate 202.

[0095] In embodiments of the present invention, the first semiconductor layer 210 may be formed from a polycrystalline semiconductor material such as polycrystalline silicon. The first semiconductor layer 210 includes a first channel region 210a and first source regions 210b and first drain regions 210c on both sides of the first channel region 210a. Each of the first source region 210b and the first drain region 210c is doped with an impurity.

[0096] Furthermore, a gate drive unit GIP corresponding to the non-display area NDA and a signal wiring 209 are located on the first buffer layer 206. The gate drive unit GIP may be located between the display area DA and the signal wiring 209. The signal wiring 209 may include a low-potential signal wiring that supplies a low-potential signal Vss.

[0097] A first gate insulating film 212 is provided above the first buffer layer 206, covering the first semiconductor layer 210. The first gate insulating film 212 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0098] A first gate electrode 214 corresponding to the first channel region 210a of the first semiconductor layer 210 is provided on the first gate insulating film 212. A first capacitor electrode 216 spaced apart from the first gate electrode 214 is also provided on the first gate insulating film 212.

[0099] The first gate electrode 214 and the first capacitor electrode 216 may be located in the same layer and formed from the same material. For example, each of the first gate electrode 214 and the first capacitor electrode 216 may be formed from a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multilayer structure.

[0100] A first interlayer insulating film 218 is provided above the first gate insulating film 212, covering the first gate electrode 214 and the first capacitor electrode 216. The first interlayer insulating film 218 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0101] A second capacitor electrode 230 corresponding to the first capacitor electrode 216 and a second light-shielding pattern 232 spaced apart from the second capacitor electrode 230 are provided on the first interlayer insulating film 218.

[0102] The second capacitor electrode 230 and the second light-shielding pattern 232 may be located in the same layer and formed from the same material. For example, each of the second capacitor electrode 230 and the second light-shielding pattern 232 may be formed from a metallic material such as one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer or multi-layer structure.

[0103] A second interlayer insulating film 234 is provided above the first interlayer insulating film 218, covering the second capacitor electrode 230 and the second light-shielding pattern 232. The second interlayer insulating film 234 serves to block moisture and oxygen from the outside. For example, the second interlayer insulating film 234 is made of silicon oxide (SiO2) or silicon nitride (SiN xIt can be formed from inorganic insulating materials such as ) or organic insulating materials such as photoacrylic or benzocyclobutene, and may have a single-layer structure or a multilayer structure.

[0104] A second semiconductor layer 236 corresponding to a second light-shielding pattern 232 is provided on the second interlayer insulating film 234. The second semiconductor layer 236 may contain one of the following: a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material.

[0105] In embodiments of the present invention, the second semiconductor layer 236 can be formed from an oxide semiconductor material such as indium gallium zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium tin zinc oxide (ITZO), or indium aluminum zinc oxide (IAZO). The second semiconductor layer 236 includes a second channel region 236a and second source regions 236b and second drain regions 236c on either side of the second channel region 236a. Each of the second source region 236b and the second drain region 236c is doped with an impurity.

[0106] A second gate insulating film 238 is provided above the second interlayer insulating film 234, covering the second semiconductor layer 236. The second gate insulating film 238 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0107] A second gate electrode 240 corresponding to the second channel region 236a of the second semiconductor layer 236 is provided on the second gate insulating film 238. For example, the second gate electrode 240 can be formed from a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may be a single-layer structure or a multilayer structure.

[0108] A third interlayer insulating film 242 is provided above the second gate insulating film 238, covering the second gate electrode 240. The third interlayer insulating film 242 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0109] On the third interlayer insulating film 242, a first source electrode 244a, a first drain electrode 244b, a second source electrode 246a, and a second drain electrode 246b are provided, spaced apart from each other.

[0110] The first source electrode 244a and the first drain electrode 244b are connected to the first source region 210b and the first drain region 210c of the first semiconductor layer 210, respectively, via contact holes formed in the third interlayer insulating film 242, the second gate insulating film 238, the second interlayer insulating film 234, the first interlayer insulating film 218, and the first gate insulating film 212. The first source electrode 244a is also connected to the first capacitor electrode 216 via contact holes formed in the third interlayer insulating film 242, the second gate insulating film 238, the second interlayer insulating film 234, and the first interlayer insulating film 218.

[0111] The second source electrode 246a and the second drain electrode 246b are connected to the second source region 236b and the second drain region 236c of the second semiconductor layer 236, respectively, via contact holes formed in the third interlayer insulating film 242 and the second gate insulating film 238. The second source electrode 246a is also connected to the second capacitor electrode 230 via contact holes formed in the third interlayer insulating film 242, the second gate insulating film 238, and the second interlayer insulating film 234.

[0112] The first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b may be located in the same layer and formed from the same material. For example, each of the first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b may be formed from a metallic material such as one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multilayer structure.

[0113] The first semiconductor layer 210, the first gate electrode 214, the first source electrode 244a, and the first drain electrode 244b constitute the first thin-film transistor T1, and the second semiconductor layer 236, the second gate electrode 240, the second source electrode 246a, and the second drain electrode 246b constitute the second thin-film transistor T2. For example, the first thin-film transistor T1 may be a switching thin-film transistor, and the second thin-film transistor T2 may be a driving thin-film transistor. In addition, the first capacitor electrode 216 and the second capacitor electrode 230 constitute a storage capacitor.

[0114] The organic light-emitting display device 200 of the present invention includes a first thin-film transistor T1 and a second thin-film transistor T2, wherein each of the first semiconductor layer 210 of the first thin-film transistor T1 and the second semiconductor layer 236 of the second thin-film transistor T2 includes one of a polycrystalline semiconductor material, an amorphous semiconductor material, and an oxide semiconductor material, and at least one of the first semiconductor layer 210 of the first thin-film transistor T1 and the second semiconductor layer 236 of the second thin-film transistor T2 may include an oxide semiconductor material. In one embodiment of the present invention, the first semiconductor layer 210 of the first thin-film transistor T1 can be formed from a polycrystalline semiconductor material, for example, polycrystalline silicon, and the second semiconductor layer 236 of the second thin-film transistor T2 can be formed from an oxide semiconductor material.

[0115] In Figure 5, the first gate electrode 214, the first source electrode 244a, and the first drain electrode 244b are located on the upper part of the first semiconductor layer 210, and the second gate electrode 240, the second source electrode 246a, and the second drain electrode 246b are located on the upper part of the second semiconductor layer 236. That is, each of the first thin-film transistor T1 and the second thin-film transistor T2 has a coplanar structure. Alternatively, in each of the first thin-film transistor T1 and the second thin-film transistor T2, the gate electrode may be located at the bottom of the semiconductor layer, and the source electrode and drain electrode may be located at the top of the semiconductor layer. That is, each of the first thin-film transistor T1 and the second thin-film transistor T2 may have an inverse staggered structure.

[0116] A first planarization layer 250 is provided above the third interlayer insulating film 242, covering the first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b. The first planarization layer 250 can be formed from an organic insulating material such as photoacrylic or benzocyclobutene.

[0117] The first planarization layer 250 may include a lower planarization layer 250a located on the first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b, and an upper planarization layer 250b located on the lower planarization layer 250a.

[0118] A connecting electrode 248 corresponding to the second source electrode 246a is provided on the lower planarization layer 250a. The connecting electrode 248 can be connected to the second source electrode 246a through a contact hole formed in the lower planarization layer 250a. For example, the connecting electrode 248 can be formed from a metallic material such as one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer or multi-layer structure.

[0119] An upper flattening layer 250b is provided on the lower flattening layer 250a, covering the connecting electrode 248, and a first electrode 260a is provided on the upper flattening layer 250b. The first electrode 260a corresponds to the connecting electrode 248 and is connected to the connecting electrode 248 through a contact hole formed in the upper flattening layer 250b.

[0120] For example, the first electrode 260a is formed separately for each pixel region P. The first electrode 260a is the anode and may include a transparent conductive oxide layer and a reflective layer made of a conductive material with a relatively large work function, such as transparent conductive oxide (TCO).

[0121] The transparent conductive oxide layer can be formed from indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO2), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO). The reflective layer can be formed from silver (Ag), or an alloy of silver with at least one of palladium (Pd), copper (Cu), indium (In), or neodymium (Nd), or an aluminum-palladium-copper (APC) alloy. For example, the first electrode 260a may have a two-layer structure of Ag / ITO or APC / ITO, or a three-layer structure of ITO / Ag / ITO or ITO / APC / ITO.

[0122] Furthermore, a bank 256 is provided on the upper planarization layer 250b, located at the boundary of the pixel region P. The bank 256 may have an opening that covers the edge of the first electrode 260a and exposes the center of the first electrode 260a. The bank 256 may extend into a portion of the non-display region NDA. The bank 256 may contain light-absorbing particles (e.g., black particles) and exhibit light absorption.

[0123] The non-display area NDA contains the first dam DAM1 and the second dam DAM2. Each of the first dam DAM1 and the second dam DAM2 is a closed rectangular ring shape surrounding the display area AA.

[0124] The first dam DAM1 is located between the display area DA and the second dam DAM2. Parts of the first dam DAM1 and each of the second dam DAM2 are located on the first buffer layer 206, and other parts of the first dam DAM1 may be located on the signal wiring 209.

[0125] Bank 256, the first dam DAM1, and the second dam DAM2 may be located in the same layer and formed from the same material. For example, each of Bank 256, the first dam DAM1, and the second dam DAM2 may be formed from an organic insulating material such as photoacrylic, benzocyclobutene, or polyimide.

[0126] A spacer 258 is provided on bank 256. For example, the spacer 258 may be a single-layer structure made of an organic insulating material such as photoacrylic or benzocyclobutene, or it may be a multilayer structure. The spacer 258 may be omitted.

[0127] An organic light-emitting layer 260b is provided covering the first electrode 260a, the bank 256, and the spacer 258. The organic light-emitting layer 260b contacts the first electrode 260a at the opening of the bank 256. That is, the organic light-emitting layer 260b can be formed in contact with the upper surface of the first electrode 260a, the side and upper surfaces of the bank 256, and the side and upper surfaces of the spacer 258.

[0128] For example, the organic light-emitting layer 260b may include a light-emitting material layer containing a host and a dopant. The organic light-emitting layer 260b may also further include at least one of the following: a hole injection layer, a hole transport layer, an electron barrier layer, a hole barrier layer, an electron transport layer, or an electron injection layer, and may have a multilayer structure.

[0129] A second electrode 260c is provided on the organic light-emitting layer 260b. The second electrode 260c can be formed from at least one of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum (Al), silver (Ag), copper (Cu), lead (Pb), magnesium (Mg), molybdenum (Mo), titanium (Ti), or alloys thereof, and may be a single-layer structure or a multilayer structure. The second electrode 260c may be a thin transparent electrode or a semi-transparent electrode.

[0130] The first electrode 260a, the organic light-emitting layer 260b, and the second electrode 260c constitute an organic light-emitting diode D. The organic light-emitting diode D can emit red light, green light, and blue light from the red pixel region, the green pixel region, and the blue pixel region, respectively.

[0131] In the organic light-emitting display device 200, light from the organic light-emitting layer 260b passes through the second electrode 260c, and an image is displayed. In other words, the organic light-emitting display device 200 of the present invention is a top-emission type display device.

[0132] A capsule sealing layer 262 is placed over the entire surface of the substrate 202 above the second electrode 260c to suppress moisture penetration. The capsule sealing layer 262 may have a multilayer structure including a first inorganic layer 262a, an organic layer 262b, and a second inorganic layer 262c, which are arranged sequentially.

[0133] For example, the first inorganic layer 262a and the second inorganic layer 262c are each made of silicon oxide (SiO2) or silicon nitride (SiN x The organic layer 262b can be formed from an inorganic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0134] The organic layer 262b is formed in a region surrounded by the first dam DAM1, and each of the first inorganic layer 262a and the second inorganic layer 262c covers the first dam DAM1 and the second dam DAM2 and is formed over the entire surface of the substrate 202. Therefore, the side surface of the organic layer 262b is covered by the second inorganic layer 262c.

[0135] The organic layer 262b is spaced apart from the first dam DAM1. Therefore, the space between the organic layer 262b and the first dam DAM1 can be defined as the trench structure B.

[0136] On the capsule encapsulation layer 262, a second buffer layer 264 is provided over the entire surface of the substrate 202. The second buffer layer 264 functions to block moisture and oxygen from the outside. For example, the second buffer layer 264 can be formed of an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiN x ) and may have a single-layer structure or a multi-layer structure.

[0137] A bridge pattern 266 is provided on the second buffer layer 264. The bridge pattern 266 can correspond to the boundary of the pixel region P. For example, the bridge pattern 266 can be formed of one of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum (Al), silver (Ag), copper (Cu), lead (Pb), magnesium (Mg), molybdenum (Mo), titanium (Ti), or an alloy thereof, and may have a single-layer structure or a multi-layer structure.

[0138] When the second buffer layer 264 is omitted, the plurality of bridge patterns 266 can be formed directly over the capsule encapsulation layer 262.

[0139] Furthermore, a black matrix 268 covering a plurality of bridge patterns 266 is provided on the second buffer layer 264. The black matrix 268 is provided corresponding to the space between light-emitting diodes D. That is, the black matrix 268 may correspond to the boundary of a pixel region P. Bank 256 has a first aperture corresponding to a pixel region, and the black matrix 268 may have a second aperture corresponding to a pixel region and larger than the first aperture.

[0140] Although not shown in the diagram, a color filter layer can be provided on the second buffer layer 264, corresponding to the pixel area.

[0141] On the black matrix 268, an organic interlayer insulating film 270 is provided across the entire surface of the substrate 202. For example, the organic interlayer insulating film 270 can be formed from an organic insulating material such as photoacrylic or benzocyclobutene, and may be a single-layer structure or a multilayer structure.

[0142] On the organic interlayer insulating film 270, a touch electrode 272 is provided corresponding to the display area DA. The touch electrode 272 may correspond to the boundary of the pixel area P. That is, the touch electrode 272 may correspond to and be located in the black matrix 268. The touch electrode 272 is connected to the bridge pattern 266 via contact holes formed in the organic interlayer insulating film 270 and the black matrix 268.

[0143] For example, the touch electrode 272 can be formed from at least one of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum (Al), silver (Ag), copper (Cu), lead (Pb), magnesium (Mg), molybdenum (Mo), titanium (Ti), or alloys thereof, and may be a single-layer or multi-layer structure.

[0144] On the touch electrode 272, an inorganic insulating film 274 is provided over the entire surface of the substrate 202. The inorganic insulating film 274 is made of silicon oxide (SiO2) or silicon nitride (SiN xIt can be formed from inorganic insulating materials such as ), and may have a single-layer structure or a multilayer structure. Since the inorganic insulating film 274 has a smaller area than the substrate 202, the organic interlayer insulating film 270 can be exposed at the edges of the substrate 202.

[0145] Multiple lenses 280 are provided on the inorganic insulating film 274, corresponding to display areas DA. Each of the multiple lenses 280 may correspond to a pixel area P. For example, one end of each of the multiple lenses 280 may correspond to at least one of the bridge pattern 266, black matrix 268, and touch electrode 272 on one side of the pixel area P, and the other end of each of the multiple lenses 280 may correspond to at least one of the bridge pattern 266, black matrix 268, and touch electrode 272 on the other side of the pixel area P.

[0146] Each of the multiple lenses 280 may have a curved rod shape, a rectangular shape, or a circular planar shape at both ends. In one embodiment of the present invention, each of the multiple lenses 280 has a curved rod shape or a rectangular planar shape at both ends, and the field of view can be adjusted by the multiple lenses 280. In this case, the adjustment of the field of view by the lenses 280 can be further improved by having at least one of the bridge pattern 266, black matrix 268, and touch electrode 272 correspond to and be located at the end of the lens 280, i.e., the boundary of the pixel area P.

[0147] Furthermore, on the inorganic insulating film 274, the stopper 282 is positioned in a non-display area (NDA). The stopper 282 acts as a dam for the solution used to form the second planarization layer 284.

[0148] Furthermore, a third dam, DAM3, is provided on the organic interlayer insulating film 270, which is exposed by the inorganic insulating film 274.

[0149] Furthermore, a flatness-improving pattern 290 is provided on the inorganic insulating film 274, corresponding to the non-display area (NDA). The flatness-improving pattern 290 prevents the solution for forming the second planarization layer 284 from accumulating in front of the stopper 282, thereby improving the flatness of the second planarization layer 284.

[0150] The flatness improvement pattern 290 is located between the display area DA and the stopper 282, and the stopper 282 is located between the third dam DAM3 and the flatness improvement pattern 290. The flatness improvement pattern 290 may be located closer to the stopper 282 than to the display area DA. That is, the flatness improvement pattern 290 may be located at a first distance d1 from the display area DA and at a second distance d2 which is smaller than the first distance d1 from the stopper 282.

[0151] Multiple lenses 280, flatness-improving patterns 290, stoppers 282, and third dam DAM3 can be formed from the same material. For example, each of the multiple lenses 280, flatness-improving patterns 290, stoppers 282, and third dam DAM3 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0152] The flatness-improving pattern 290 includes multiple convex patterns spaced apart from each other. For example, the convex patterns may be spaced apart in a first direction X and a second direction Y perpendicular to the first direction X. The multiple convex patterns increase the surface area of ​​the inorganic insulating film 274 in the non-display area NDA. Capillary action may occur due to the space between adjacent flatness-improving patterns 290. Therefore, the rate at which the solution for forming the second planarization layer 284 spreads towards the stopper 282 is increased by the flatness-improving pattern 290, which can prevent or minimize the problem of the second planarization layer 284 protruding in the region in front of the stopper 282 (A in Figure 3).

[0153] In other words, each of the stoppers 282 and the third dam DAM3 is a sealed rectangular ring shape surrounding the display area DA, while the flatness improvement patterns 290 are spaced apart from each other. The space between adjacent flatness improvement patterns 290 acts as a flow path for the solution to form the second flattening layer 284. Figure 4 shows two spaced-apart stoppers 282, but one or more stoppers 282 may also be provided.

[0154] The inorganic insulating film 274 can be surface-treated to further increase the rate at which the solution for forming the second planarization layer 284 spreads. For example, the inorganic insulating film 274 can be subjected to plasma treatment using oxygen (O2) gas. In this case, it is desirable that the third dam DAM3 is not surface-treated.

[0155] The non-display area NDA includes a first non-display area NDA1 located in a first direction X relative to the display area DA, a second non-display area NDA2 located in a second direction Y relative to the display area DA, and a third non-display area NDA3, which is the area between the first non-display area NDA1 and the second non-display area NDA2, i.e., a corner. The flatness-improving patterns 290, which are multiple convex patterns, can be placed in each of the first to third non-display areas NDA1 to NDA3.

[0156] Each of the multiple convex patterns 290 has a first height, and each of the multiple lenses 280 may have a second height greater than the first height. Also, each of the stoppers 282 may have a third height greater than the first height and equal to or less than the second height.

[0157] Each of the multiple lenses 280, multiple convex patterns 290, and stoppers 282 is located on an inorganic insulating film 274. Alternatively, if the inorganic insulating film 274 is omitted, each of the multiple lenses 280, multiple convex patterns 290, and stoppers 282 may be located on an organic interlayer insulating film 270.

[0158] A second planarization layer 284 is provided on the upper part of the substrate 202 to cover and flatten the multiple lenses 280. The second planarization layer 284 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. The organic insulating material constituting the lenses 280 has a first refractive index, and the organic insulating material constituting the second planarization layer 284 has a second refractive index that is smaller than the first refractive index.

[0159] The second flattening layer 284 may cover the multiple lenses 280, the flatness-improving pattern 290, and the stopper 282, and be formed over the entire region surrounded by the third dam DAM 3. Alternatively, the second flattening layer 284 may cover the multiple lenses 280 and the flatness-improving pattern 290, and be formed over the entire region surrounded by the stopper 282.

[0160] Trench structure B acts as a buffer against the flow of solution for forming the second planarization layer 284. Between trench structure B, i.e., the organic layer 262b of the capsule sealing layer 262 and the first dam DAM1, the second planarization layer 284 has a greater thickness than the second planarization layer 284 in the indicated region DA.

[0161] After the solution for forming the second flattening layer 284 is dropped onto the display area DA, it spreads toward the non-display area NDA. However, the flatness-improving pattern 290 provided between the display area DA and the stopper 282 increases the flow rate of the solution for forming the second flattening layer 284, thereby improving the flatness of the second flattening layer 284.

[0162] Furthermore, the trench structure B defined by the organic layer 262b of the capsule sealing layer 262 and the first dam DAM1 regulates the flow of the solution for forming the second flattening layer 284. As a result, the solution for forming the second flattening layer 284 is prevented from flowing beyond the third dam DAM3, and the flatness of the second flattening layer 284 can be further improved.

[0163] Figure 6 is a schematic plan view showing a part of an organic light-emitting device according to a second embodiment of the present invention.

[0164] Referring to Figure 6 in conjunction with Figures 4 and 5, the organic light-emitting display device 200 includes a display area DA and a non-display area NDA surrounding the display area DA. A lens 280 corresponding to a pixel area P is located in the display area DA, and a stopper 282 and a flatness-improving pattern 290 are located in the non-display area NDA.

[0165] The lens 280, stopper 282, and flatness-improving pattern 290 may be located on the inorganic insulating film 274. Alternatively, the inorganic insulating film 274 may be omitted, and the lens 280, stopper 282, and flatness-improving pattern 290 may be located on the organic interlayer insulating film 270.

[0166] Multiple lenses 280, flatness-improving patterns 290, and stoppers 282 can be formed from the same material. For example, each of the multiple lenses 280, flatness-improving patterns 290, and stoppers 282 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0167] The lens 280 may have a major axis in the first direction X and a minor axis in the second direction Y. For example, the lens 280 may have a curved rod shape at both ends or a rectangular planar shape, and the ends of multiple lenses 280 may overlap with at least one of the black matrix 268 and the touch electrode 272.

[0168] The stopper 282 is a sealed, rectangular ring shape that surrounds the display area DA.

[0169] The flatness-improving pattern 290 is located between the display area DA and the stopper 282. The flatness-improving pattern 290 may be located closer to the stopper 282 than to the display area DA. That is, the flatness-improving pattern 290 may be located at a first distance d1 from the display area DA and at a second distance d2 smaller than the first distance d1 from the stopper 282.

[0170] The flatness-improving pattern 290 includes multiple convex patterns spaced apart from each other. For example, the multiple convex patterns may be spaced apart in a first direction X and a second direction Y perpendicular to the first direction X. The multiple convex patterns increase the surface area of ​​the inorganic insulating film 274 in the non-visible region NDA. Capillary action may occur due to the space between adjacent flatness-improving patterns 290.

[0171] Therefore, the rate at which the solution for forming the second planarization layer 284 spreads towards the stopper 282 is increased by the planarization improvement pattern 290, which can prevent or minimize the problem of the second planarization layer 284 protruding in the region in front of the stopper 282 (A in Figure 3).

[0172] In other words, the stopper 282 and the third dam DAM3 are each in the shape of a closed ring surrounding the display area DA, while the flatness improvement patterns 290 are spaced apart from each other. The space between adjacent flatness improvement patterns 290 acts as a flow path for the solution to form the second flattening layer 284.

[0173] The non-display area NDA includes a first non-display area NDA1 located in a first direction X relative to the display area DA, and a second non-display area NDA2 located in a second direction Y relative to the display area DA. The flatness-improving pattern 290, which is a plurality of convex patterns, may have the same shape and size and be arranged at the same density in each of the first non-display area NDA1 and the second non-display area NDA2.

[0174] The non-display area NDA may include the area between the first non-display area NDA1 and the second non-display area NDA2, i.e., the corner, which is the third non-display area NDA3. The flatness-improving patterns 290, which are multiple convex patterns, may be placed in each of the third non-display areas NDA3. Furthermore, the flatness-improving patterns 290, which are multiple convex patterns, may have the same shape and size and be placed at the same density in each of the first to third non-display areas NDA1 to NDA3.

[0175] After the solution for forming the second flattening layer 284 is dropped onto the display area DA, it spreads toward the non-display area NDA. However, the flatness-improving pattern 290 provided between the display area DA and the stopper 282 increases the rate at which the solution for forming the second flattening layer 284 spreads, thereby improving the flatness of the second flattening layer 284.

[0176] Figure 7 is a schematic plan view showing a part of an organic light-emitting device according to a second embodiment of the present invention.

[0177] Referring to Figure 7 in conjunction with Figures 4 and 5, the organic light-emitting display device 200A includes a display area DA and a non-display area NDA surrounding the display area DA. A lens 280 corresponding to a pixel area P is located in the display area DA, and a stopper 282 and a flatness-improving pattern 390 are located in the non-display area NDA.

[0178] The lens 280, stopper 282, and flatness-improving pattern 390 may be located on the inorganic insulating film 274. Alternatively, the inorganic insulating film 274 may be omitted, and the lens 280, stopper 282, and flatness-improving pattern 390 may be located on the organic interlayer insulating film 270.

[0179] Multiple lenses 280, flatness-improving patterns 390, and stoppers 282 can be formed from the same material. For example, each of the multiple lenses 280, flatness-improving patterns 390, and stoppers 282 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0180] The lens 280 may have a major axis in the first direction X and a minor axis in the second direction Y. For example, the lens 280 may have a curved rod shape or a rectangular planar shape at both ends, and the ends of the lens 280 may overlap with at least one of the black matrix 268 and the touch electrode 272.

[0181] The stopper 282 is a sealed, rectangular ring shape that surrounds the display area DA. Figure 7 shows two spaced-apart stoppers 282, but one or more stoppers 282 can also be provided.

[0182] The flatness-improving pattern 390 is located between the display area DA and the stopper 282. The flatness-improving pattern 390 may be located closer to the stopper 282 than to the display area DA. That is, the flatness-improving pattern 390 may be located at a first distance d1 from the display area DA and at a second distance d2 smaller than the first distance d1 from the stopper 282.

[0183] The flatness-improving pattern 390 includes multiple convex patterns spaced apart from each other. For example, the multiple convex patterns may be spaced apart in a first direction X and a second direction Y perpendicular to the first direction X. The multiple convex patterns increase the surface area of ​​the inorganic insulating film 274 in the non-visible region NDA. Capillary action may occur due to the space between adjacent flatness-improving patterns 390.

[0184] Therefore, the rate at which the solution for forming the second planarization layer 284 spreads towards the stopper 282 is increased by the planarization improvement pattern 390, which can prevent or minimize the problem of the second planarization layer 284 protruding in the region in front of the stopper 282 (A in Figure 3).

[0185] In other words, the stopper 282 and the third dam DAM3 are each in the shape of a closed ring surrounding the display area DA, while the flatness improvement patterns 390 are spaced apart from each other. The space between adjacent flatness improvement patterns 390 acts as a flow path for the solution to form the second flattening layer 284.

[0186] The non-display area NDA includes a first non-display area NDA1 located in the first direction X relative to the display area DA, and a second non-display area NDA2 located in the second direction Y relative to the display area DA.

[0187] The flatness-improving pattern 390, which consists of multiple convex patterns, includes multiple first flatness-improving patterns 392 (multiple first convex patterns) located in the first non-display region NDA1, and multiple second flatness-improving patterns 394 (multiple second convex patterns) located in the second non-display region NDA2. The multiple first flatness-improving patterns 392 have a first density (spatial frequency), and the multiple second flatness-improving patterns 394 have a second density smaller than the first density.

[0188] The non-disclosure region NDA may further include a third non-disclosure region NDA3, which is the region between the first non-disclosure region NDA1 and the second non-disclosure region NDA2, i.e., the corner.

[0189] The flatness-improving pattern 390, which consists of multiple convex patterns, may further include multiple third flatness-improving patterns 396 (multiple third convex patterns) located in the third non-display region NDA3. In this case, the multiple third flatness-improving patterns 396 may have a third density that is smaller than the first density and larger than the second density.

[0190] The first to third flatness improvement patterns 392, 394, and 396 have the same shape. The third flatness improvement pattern 396 may have a smaller area (size) than the first flatness improvement pattern 392 and a larger area (size) than the second flatness improvement pattern 394. In other words, the first to third flatness improvement patterns 392, 394, and 396 have the same shape but may have different densities and sizes.

[0191] In other embodiments of the present invention, the first to third flatness-improving patterns 392, 394, and 396 may have the same area. That is, the first to third flatness-improving patterns 392, 394, and 396 may have the same shape and the same size, while having different densities.

[0192] After the solution for forming the second planarization layer 284 is dropped onto the display area DA, it spreads toward the non-display area NDA. However, the flatness-improving pattern 390 provided between the display area DA and the stopper 282 increases the rate at which the solution for forming the second planarization layer 284 spreads, thereby improving the flatness of the second planarization layer 284.

[0193] Furthermore, because the lens 280 has a major axis in the first direction X and a minor axis in the second direction Y, the rate at which the solution spreads to form the second planarization layer 284 is faster in the first direction X than in the second direction perpendicular to the first direction X, and in the third direction oblique to the first and second directions.

[0194] Therefore, by making the density of the first flatness-improving pattern 392 located in the first non-display region NDA1 greater than the density of the second flatness-improving pattern 394 located in the second non-display region NDA2, and the density of the third flatness-improving pattern 396 located in the third non-display region NDA3, the flatness of the second flattening layer 284 can be further improved.

[0195] Figure 8 is a schematic plan view showing a part of an organic light-emitting device according to a second embodiment of the present invention.

[0196] Referring to Figure 8 in conjunction with Figures 4 and 5, the organic light-emitting display device 200B includes a display area DA and a non-display area NDA surrounding the display area DA. The display area DA contains a lens 280 corresponding to the pixel area P, while the non-display area NDA contains a stopper 282 and a flatness-improving pattern 490.

[0197] The lens 280, stopper 282, and flatness-improving pattern 490 may be located on the inorganic insulating film 274. Alternatively, the inorganic insulating film 274 may be omitted, and the lens 280, stopper 282, and flatness-improving pattern 490 may be located on the organic interlayer insulating film 270.

[0198] Multiple lenses 280, flatness-improving patterns 490, and stoppers 282 can be formed from the same material. For example, each of the multiple lenses 280, flatness-improving patterns 490, and stoppers 282 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0199] The lens 280 may have a major axis in the first direction X and a minor axis in the second direction Y. For example, the lens 280 may have a curved rod shape or a rectangular planar shape at both ends, and the ends of the lens 280 may overlap with at least one of the black matrix 268 and the touch electrode 272.

[0200] The stopper 282 is a closed rectangular ring shape that surrounds the display area DA. Figure 8 shows two spaced-apart stoppers 282, but one or more stoppers 282 can also be provided.

[0201] The flatness-improving pattern 490 is located between the display area DA and the stopper 282. The flatness-improving pattern 490 may be located closer to the stopper 282 than to the display area DA. That is, the flatness-improving pattern 490 may be located at a first distance d1 from the display area DA and at a second distance d2 which is smaller than the first distance d1 from the stopper 282.

[0202] The flatness-improving pattern 490 includes multiple convex patterns spaced apart from each other. For example, the convex patterns may be spaced apart in a first direction X and a second direction Y perpendicular to the first direction X. The multiple convex patterns increase the surface area of ​​the inorganic insulating film 274 in the non-display area (NDA). Capillary action may occur due to the space between adjacent flatness-improving patterns 490. Therefore, the rate at which the solution for forming the second planarization layer 284 spreads towards the stopper 282 is increased by the flatness-improving pattern 490, which can prevent or minimize the problem of the second planarization layer 284 protruding in the region in front of the stopper 282 (A in Figure 3).

[0203] In other words, the stopper 282 and the third dam DAM3 are each in the shape of a closed ring surrounding the display area DA, while the flatness improvement patterns 490 are spaced apart from each other. The space between adjacent flatness improvement patterns 490 acts as a flow path for the solution to form the second flattening layer 284.

[0204] The non-display area NDA includes a first non-display area NDA1 located in the first direction X relative to the display area DA, and a second non-display area NDA2 located in the second direction Y relative to the display area DA.

[0205] The flatness-improving pattern 490, which consists of multiple convex patterns, includes multiple first flatness-improving patterns 492 (multiple first convex patterns) located in the first non-display region NDA1, and multiple second flatness-improving patterns 494 (multiple second convex patterns) located in the second non-display region NDA2. The multiple first flatness-improving patterns 492 have a major axis in the first direction X and a minor axis in the second direction Y, and the multiple second flatness-improving patterns 494 have a major axis in the second direction Y and a minor axis in the first direction X.

[0206] The non-disclosure region NDA may further include a third non-disclosure region NDA3, which is the region between the first non-disclosure region NDA1 and the second non-disclosure region NDA2, i.e., the corner.

[0207] The flatness-improving pattern 490, which consists of multiple convex patterns, may further include multiple third flatness-improving patterns 496 (multiple third convex patterns) located in the third non-display area NDA3. In this case, the multiple third flatness-improving patterns 496 may have a major axis in a third direction toward the display area DA, among the directions intersecting the first direction X and the second direction Y, and a minor axis in a fourth direction intersecting the first direction X, the second direction Y, and the third direction.

[0208] The first to third flatness improvement patterns 492, 494, and 496 have the same shape, the same area and density, but differ in their arrangement direction.

[0209] In other embodiments of the present invention, the first to third flatness-improving patterns 492, 494, and 496 may differ in at least one of their shape, area, density, and arrangement direction.

[0210] After the solution for forming the second planarization layer 284 is dropped onto the display area DA, it spreads toward the non-display area NDA. However, the flatness-improving pattern 490 provided between the display area DA and the stopper 282 increases the rate at which the solution for forming the second planarization layer 284 spreads, thereby improving the flatness of the second planarization layer 284.

[0211] Furthermore, because the lens 280 has a major axis in the first direction X and a minor axis in the second direction Y, the rate at which the solution spreads to form the second planarization layer 284 is faster in the first direction X than in the second direction perpendicular to the first direction X, and in the third direction oblique to the first and second directions.

[0212] Therefore, by arranging the first flatness-improving pattern 492 located in the first non-display area NDA1, the second flatness-improving pattern 494 located in the second non-display area NDA2, and the third flatness-improving pattern 496 located in the third non-display area NDA3 in different directions, the flatness of the second flattening layer 284 can be further improved.

[0213] Figure 9 is a schematic cross-sectional view showing a part of an organic light-emitting device according to a second embodiment of the present invention.

[0214] Referring to Figure 9 in conjunction with Figures 4 and 5, the organic light-emitting display device 200C includes a display area DA and a non-display area NDA surrounding the display area DA. The display area DA contains a lens 280 corresponding to the pixel area P, while the non-display area NDA contains a stopper 282 and a flatness-improving pattern 590.

[0215] The lens 280, stopper 282, and flatness-improving pattern 590 may be located on the inorganic insulating film 274. Alternatively, the inorganic insulating film 274 may be omitted, and the lens 280, stopper 282, and flatness-improving pattern 590 may be located on the organic interlayer insulating film 270.

[0216] Multiple lenses 280, flatness-improving patterns 590, and stoppers 282 can be formed from the same material. For example, each of the multiple lenses 280, flatness-improving patterns 590, and stoppers 282 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0217] The lens 280 may have a major axis in the first direction X and a minor axis in the second direction Y. For example, the lens 280 may have a curved rod shape or a rectangular planar shape at both ends, and the ends of the lens 280 may overlap with at least one of the black matrix 268 and the touch electrode 272.

[0218] The flatness-improving pattern 590 is located between the display area DA and the stopper 282. The flatness-improving pattern 590 may be located closer to the stopper 282 than to the display area DA. That is, the flatness-improving pattern 590 may be located at a first distance d1 from the display area DA and at a second distance d2 which is smaller than the first distance d1 from the stopper 282.

[0219] The flatness-improving pattern 590 includes multiple convex patterns spaced apart from each other. For example, the multiple convex patterns may be spaced apart in a first direction X and a second direction Y perpendicular to the first direction X. The multiple convex patterns increase the surface area of ​​the inorganic insulating film 274 in the non-visible region NDA. Capillary action may occur due to the space between adjacent flatness-improving patterns 590.

[0220] Therefore, the rate at which the solution for forming the second planarization layer 284 spreads towards the stopper 282 is increased by the planarization improvement pattern 590, which can prevent or minimize the problem of the second planarization layer 284 protruding in the region in front of the stopper 282 (A in Figure 3).

[0221] In other words, the stopper 282 and the third dam DAM3 are each in the shape of a closed ring surrounding the display area DA, while the flatness improvement patterns 590 are spaced apart from each other. The space between adjacent flatness improvement patterns 590 acts as a flow path for the solution to form the second flattening layer 284.

[0222] The non-display area NDA includes a first non-display area NDA1 located in the first direction X relative to the display area DA, and a second non-display area NDA2 located in the second direction Y relative to the display area DA.

[0223] The flatness-improving pattern 590, which consists of multiple convex patterns, includes multiple first flatness-improving patterns 592 (multiple first convex patterns) located in the first non-display area NDA1, and multiple second flatness-improving patterns 594 (multiple second convex patterns) located in the second non-display area NDA2. The multiple first flatness-improving patterns 592 have a first height h1, and the multiple second flatness-improving patterns 594 have a second height h2 that is smaller than the first height h1.

[0224] The non-disclosure region NDA may further include a third non-disclosure region NDA3, which is the region between the first non-disclosure region NDA1 and the second non-disclosure region NDA2, i.e., the corner.

[0225] The flatness-improving pattern 590, which consists of multiple convex patterns, may further include multiple third flatness-improving patterns 596 (multiple third convex patterns) located in the third non-display area NDA3. In this case, the multiple third flatness-improving patterns 596 have a third height h3 that is smaller than the first height h1 and larger than the second height h2.

[0226] The first to third flatness improvement patterns 592, 594, and 596 have the same shape, the same area and density, but differ in their height.

[0227] In other embodiments of the present invention, the first to third flatness-improving patterns 592, 594, and 596 may differ in at least one of their shape, area, density, and height.

[0228] After the solution for forming the second planarization layer 284 is dropped onto the display area DA, it spreads toward the non-display area NDA. However, the flatness-improving pattern 590 provided between the display area DA and the stopper 282 increases the rate at which the solution for forming the second planarization layer 284 spreads, thereby improving the flatness of the second planarization layer 284.

[0229] Furthermore, because the lens 280 has a major axis in the first direction X and a minor axis in the second direction Y, the rate at which the solution spreads to form the second planarization layer 284 is faster in the first direction X than in the second direction perpendicular to the first direction X, and in the third direction oblique to the first and second directions.

[0230] Therefore, by making the height of the first flatness-improving pattern 592 located in the first non-display area NDA1 greater than the height of the second flatness-improving pattern 594 located in the second non-display area NDA2, and the height of the third flatness-improving pattern 596 located in the third non-display area NDA3, the flatness of the second flattening layer 284 can be further improved.

[0231] Referring to Figures 7 to 9 of the present invention, the convex flatness-improving patterns 390, 490, and 590 include first flatness-improving patterns 392, 492, and 592 located in a first non-display area NDA1 in a first direction X from the display area DA, second flatness-improving patterns 394, 494, and 594 located in a second non-display area NDA2 in a second direction Y from the display area DA, and third flatness-improving patterns 396, 496, and 596 located in a third non-display area NDA3 which is the corner between the first non-display area NDA1 and the second non-display area NDA2. The first flatness-improving patterns 392, 492, and 592, the second flatness-improving patterns 394, 494, and 594, and the third flatness-improving patterns 396, 496, and 596 differ in density, orientation, and height, and can further improve the flatness of the second flattening layer 284 in the entire organic light-emitting display device 200.

[0232] Figure 10 is a schematic cross-sectional view showing an organic light-emitting display device according to a third embodiment of the present invention.

[0233] Referring to Figure 10, the organic light-emitting display device 600 comprises a substrate 602 including a display device DA and a non-display area NDA; a light-emitting diode D corresponding to the display area DA and located on the upper part of the substrate 602; an organic interlayer insulating film 670 located on the upper part of the light-emitting diode D; a plurality of lenses 680 corresponding to the display area DA and located on the organic interlayer insulating film 670; a stopper 682 and a flatness-improving pattern 690 corresponding to the non-display area NDA and located on the organic interlayer insulating film 670; and a second planarization layer 684 covering the plurality of lenses 680, the flatness-improving pattern 690, and the stopper 682.

[0234] Multiple pixel regions (P in Figure 5) are defined on the substrate 602. The substrate 602 may be a glass substrate or a plastic substrate. For example, the substrate 602 may be any one of the following: a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylene naphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, or a polycarbonate (PC) substrate.

[0235] In one embodiment of the present invention, the substrate 602 may have a three-layer structure including a first polyimide film, a second polyimide film, and an interlayer inorganic film between the first and second polyimide films. The interlayer inorganic film may be silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ).

[0236] On the first buffer layer 606, a pixel circuit layer 608 corresponding to the display area DA, a gate drive unit GIP corresponding to the non-display area NDA, and a signal wiring 609 are located. The gate drive unit GIP may be located between the display area DA and the signal wiring 609.

[0237] The pixel circuit layer 608 includes a first thin-film transistor T1 and a second thin-film transistor T2. The pixel circuit layer 208 may further include a storage capacitor.

[0238] Referring to Figure 10 along with Figure 5, the first light-shielding pattern 204 is placed on the substrate 602. The first light-shielding pattern 204 serves to block light incident from below the substrate 602. For example, the first light-shielding pattern 204 can be formed from a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may be a single-layer or multi-layer structure.

[0239] A first buffer layer 606 is provided on the upper part of the substrate 602, covering the first light-shielding pattern 204. The first buffer layer 606 serves to block moisture and oxygen from the outside.

[0240] A first semiconductor layer 210 corresponding to the first light-shielding pattern 204 is arranged on the first buffer layer 606. The first semiconductor layer 210 may contain one of the following: a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material.

[0241] In embodiments of the present invention, the first semiconductor layer 210 may be formed from a polycrystalline semiconductor material such as polycrystalline silicon. The first semiconductor layer 210 includes a first channel region 210a and first source regions 210b and first drain regions 210c on both sides of the first channel region 210a. Each of the first source region 210b and the first drain region 210c is doped with an impurity.

[0242] Furthermore, a gate drive unit GIP corresponding to the non-display area NDA and a signal wiring 609 are located on the first buffer layer 606. The gate drive unit GIP may be located between the display area DA and the signal wiring 609. The signal wiring 609 may include a low-potential signal wiring that supplies a low-potential signal Vss.

[0243] A first gate insulating film 212 is provided above the first buffer layer 606, covering the first semiconductor layer 210. A first gate electrode 214 corresponding to the first channel region 210a of the first semiconductor layer 210 is provided on the first gate insulating film 212. A first capacitor electrode 216 is also provided on the first gate insulating film 212, spaced apart from the first gate electrode 214.

[0244] A first interlayer insulating film 218 is provided above the first gate insulating film 212, covering the first gate electrode 214 and the first capacitor electrode 216. A second capacitor electrode 230 corresponding to the first capacitor electrode 216 and a second light-shielding pattern 232 spaced apart from the second capacitor electrode 230 are provided on the first interlayer insulating film 218.

[0245] A second interlayer insulating film 234 is provided above the first interlayer insulating film 218, covering the second capacitor electrode 230 and the second light-shielding pattern 232. A second semiconductor layer 236 corresponding to the second light-shielding pattern 232 is provided on the second interlayer insulating film 234. The second semiconductor layer 236 may contain any one of the following: a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material.

[0246] In embodiments of the present invention, the second semiconductor layer 236 can be formed from an oxide semiconductor material such as indium gallium zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium tin zinc oxide (ITZO), or indium aluminum zinc oxide (IAZO). The second semiconductor layer 236 includes a second channel region 236a and second source regions 236b and second drain regions 236c on either side of the second channel region 236a. Each of the second source region 236b and the second drain region 236c is doped with an impurity.

[0247] A second gate insulating film 238 is provided above the second interlayer insulating film 234, covering the second semiconductor layer 236. A second gate electrode 240 corresponding to the second channel region 236a of the second semiconductor layer 236 is provided on the second gate insulating film 238.

[0248] A third interlayer insulating film 242 is provided above the second gate insulating film 238, covering the second gate electrode 240. A first source electrode 244a, a first drain electrode 244b, a second source electrode 246a, and a second drain electrode 246b are provided on the third interlayer insulating film 242, spaced apart from each other.

[0249] The first source electrode 244a and the first drain electrode 244b are connected to the first source region 210b and the first drain region 210c of the first semiconductor layer 210, respectively, via contact holes formed in the third interlayer insulating film 242, the second gate insulating film 238, the second interlayer insulating film 234, the first interlayer insulating film 218, and the first gate insulating film 212. The first source electrode 244a is also connected to the first capacitor electrode 216 via contact holes formed in the third interlayer insulating film 242, the second gate insulating film 238, the second interlayer insulating film 234, and the first interlayer insulating film 218.

[0250] The second source electrode 246a and the second drain electrode 246b are connected to the second source region 236b and the second drain region 236c of the second semiconductor layer 236, respectively, via contact holes formed in the third interlayer insulating film 242 and the second gate insulating film 238. The second source electrode 246a is also connected to the second capacitor electrode 230 via contact holes formed in the third interlayer insulating film 242, the second gate insulating film 238, and the second interlayer insulating film 234.

[0251] The first semiconductor layer 210, the first gate electrode 214, the first source electrode 244a, and the first drain electrode 244b constitute the first thin-film transistor T1, and the second semiconductor layer 236, the second gate electrode 240, the second source electrode 246a, and the second drain electrode 246b constitute the second thin-film transistor T2.

[0252] The organic light-emitting display device 600 of the present invention includes a first thin-film transistor T1 and a second thin-film transistor T2. Each of the first semiconductor layer 210 of the first thin-film transistor T1 and the second semiconductor layer 236 of the second thin-film transistor T2 may contain one of a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material. At least one of the first semiconductor layer 210 of the first thin-film transistor T1 and the second semiconductor layer 236 of the second thin-film transistor T2 may contain an oxide semiconductor material. In one embodiment of the present invention, the first semiconductor layer 210 of the first thin-film transistor T1 may be formed from a polycrystalline semiconductor material, for example, polycrystalline silicon, and the second semiconductor layer 236 of the second thin-film transistor T2 may be formed from an oxide semiconductor material.

[0253] A first planarization layer 650 is provided above the third interlayer insulating film 242, covering the first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b. The first planarization layer 650 can be formed from an organic insulating material such as photoacrylic or benzocyclobutene.

[0254] The first flattening layer 650 is located on the first source electrode 244a, the first drain electrode 244b, the second source electrode 246a, and the second drain electrode 246b.

[0255] It may include a lower flattening layer 250a and an upper flattening layer 250b located on the lower flattening layer 250a.

[0256] A connecting electrode 248 corresponding to the second source electrode 246a is provided on the lower flattening layer 250a. The connecting electrode 248 can be connected to the second source electrode 246a through a contact hole formed in the lower flattening layer 250a.

[0257] An upper flattening layer 250b is provided on the lower flattening layer 250a, covering the connecting electrode 248, and a first electrode 260a is provided on the upper flattening layer 250b. The first electrode 260a corresponds to the connecting electrode 248 and is connected to the connecting electrode 248 through a contact hole formed in the upper flattening layer 250b.

[0258] For example, the first electrode 260a is formed separately for each pixel region P. The first electrode 260a is the anode and may include a transparent conductive oxide layer and a reflective layer made of a conductive material with a relatively large work function, such as transparent conductive oxide (TCO).

[0259] The transparent conductive oxide layer can be formed from indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO). The reflective layer can be formed from silver (Ag), or an alloy of silver with at least one of palladium (Pd), copper (Cu), indium (In), or neodymium (Nd), or an aluminum-palladium-copper (APC) alloy. For example, the first electrode 260a may have a two-layer structure of Ag / ITO or APC / ITO, or a three-layer structure of ITO / Ag / ITO or ITO / APC / ITO.

[0260] Furthermore, a bank 656 is provided on the upper planarization layer 250b, located at the boundary of the pixel region P. The bank 656 may have an opening that covers the edge of the first electrode 260a and exposes the center of the first electrode 260a. The bank 656 may extend into a portion of the non-display region NDA. The bank 656 may contain light-absorbing particles (e.g., black particles) and exhibit light absorption.

[0261] The non-display area NDA contains the first dam DAM1 and the second dam DAM2. Each of the first dam DAM1 and the second dam DAM2 is a sealed rectangular ring shape surrounding the display area AA.

[0262] A spacer 258 is provided on the bank 656, and an organic light-emitting layer 260b is provided covering the first electrode 260a, the bank 656, and the spacer 258.

[0263] A second electrode 260c is provided on the organic light-emitting layer 260b. The second electrode 260c can be formed from at least one of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum (Al), silver (Ag), copper (Cu), lead (Pb), magnesium (Mg), molybdenum (Mo), titanium (Ti), or alloys thereof, and may be a single-layer structure or a multilayer structure. The second electrode 260c may be a thin transparent electrode or a semi-transparent electrode.

[0264] The first electrode 260a, the organic light-emitting layer 260b, and the second electrode 260c constitute an organic light-emitting diode D. The organic light-emitting diode D can emit red light, green light, and blue light from the red pixel region, the green pixel region, and the blue pixel region, respectively.

[0265] In the organic light-emitting display device 600, light from the organic light-emitting layer 260b passes through the second electrode 260c, and an image is displayed. In other words, the organic light-emitting display device 600 of the present invention is a top-emission type display device.

[0266] A capsule sealing layer 662 is placed over the entire surface of the substrate 602 above the second electrode 260c to suppress moisture penetration. The capsule sealing layer 662 may have a multilayer structure including a first inorganic layer 662a, an organic layer 662b, and a second inorganic layer 662c, which are arranged sequentially.

[0267] The organic layer 662b is formed in the region surrounded by the first dam DAM1, while the first inorganic layer 662a and the second inorganic layer 662c each cover the first dam DAM1 and the second dam DAM2, forming across the entire surface of the substrate 602. Therefore, the sides of the organic layer 664b are covered by the second inorganic layer 662c.

[0268] The organic layer 662b is separated from the first dam DAM1. Therefore, the space between the organic layer 662b and the first dam DAM1 can be defined as trench structure B.

[0269] A second buffer layer 664 is provided on the capsule sealing layer 662, covering the entire surface of the substrate 602. A bridge pattern 266 is provided on the second buffer layer 664. The bridge pattern 266 may correspond to the boundary of a pixel region P.

[0270] Furthermore, a black matrix 668 covering a plurality of bridge patterns 266 is provided on the second buffer layer 664. The black matrix 668 is provided corresponding to the space between light-emitting diodes D. That is, the black matrix 668 may correspond to the boundary of a pixel region P. Bank 656 has a first aperture corresponding to a pixel region, and the black matrix 668 may have a second aperture corresponding to a pixel region and larger than the first aperture.

[0271] Although not shown in the diagram, a color filter layer can be provided on the second buffer layer 664, corresponding to the pixel area.

[0272] On the black matrix 668, an organic interlayer insulating film 670 is provided over the entire surface of the substrate 602. For example, the organic interlayer insulating film 670 can be formed from an organic insulating material such as photoacrylic or benzocyclobutene, and may be a single-layer structure or a multilayer structure.

[0273] On the organic interlayer insulating film 670, a touch electrode 672 is provided corresponding to the display area DA. The touch electrode 672 may correspond to the boundary of the pixel area P. That is, the touch electrode 672 may correspond to and be located in relation to the black matrix 668. The touch electrode 672 is connected to the bridge pattern 266 via contact holes formed in the organic interlayer insulating film 670 and the black matrix 668.

[0274] On the touch electrode 672, an inorganic insulating film 674 is provided over the entire surface of the substrate 602. The inorganic insulating film 674 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ), and may have a single-layer structure or a multilayer structure. Since the inorganic insulating film 674 has a smaller area than the substrate 602, the organic interlayer insulating film 670 can be exposed at the edges of the substrate 602.

[0275] Multiple lenses 680 are provided on the inorganic insulating film 674, corresponding to display areas DA. Each of the multiple lenses 680 may correspond to a pixel area P. For example, one end of each of the multiple lenses 680 may correspond to at least one of the bridge pattern 266, black matrix 668, and touch electrode 672 on one side of the pixel area P, and the other end of each of the multiple lenses 680 may correspond to at least one of the bridge pattern 266, black matrix 668, and touch electrode 672 on the other side of the pixel area P.

[0276] Each of the multiple lenses 680 may have a curved rod shape, a rectangular shape, or a circular planar shape at both ends. In one embodiment of the present invention, each of the multiple lenses 680 has a curved rod shape or a rectangular planar shape at both ends, and the field of view can be adjusted by the multiple lenses 680. In this case, the adjustment of the field of view by the lenses 680 can be further improved by having at least one of the bridge pattern 266, black matrix 668, and touch electrode 672 correspond to and be located at the end of the lens 680, i.e., the boundary of the pixel area P.

[0277] Furthermore, on the inorganic insulating film 674, the stopper 282 is located in a non-display area (NDA). The stopper 682 acts as a dam for the solution used to form the second planarization layer 684.

[0278] Furthermore, a third dam, DAM3, is provided on the organic interlayer insulating film 670, which is exposed by the inorganic insulating film 674.

[0279] Multiple lenses 680, stoppers 682, and third dam DAM3 can be formed from the same material. For example, each of the multiple lenses 680, stoppers 682, and third dam DAM3 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0280] Furthermore, a flatness-improving pattern 690 is provided on the inorganic insulating film 674, corresponding to the non-display area (NDA). The flatness-improving pattern 690 prevents the solution for forming the second planarization layer 684 from accumulating in front of the stopper 682, thereby improving the flatness of the second planarization layer 684.

[0281] The flatness improvement pattern 690 is located between the display area DA and the stopper 682, and the stopper 682 is located between the third dam DAM3 and the flatness improvement pattern 690. The flatness improvement pattern 690 can be located closer to the stopper 682 than the display area DA. That is, the flatness improvement pattern 690 is located at a first distance d1 from the display area DA, and can be located at a second distance d2 smaller than the first distance d1 from the stopper 282.

[0282] The flatness improvement pattern 690 includes a plurality of concave patterns formed on the organic interlayer insulating film 670. The plurality of concave patterns can be formed by removing part or all of the organic interlayer insulating film 670. For example, the plurality of concave patterns can be spaced apart from each other in the first direction X and the second direction Y perpendicular to the first direction X. The plurality of concave patterns increase the surface area of the inorganic insulating film 674 in the non-display area NDA. Therefore, the rate at which the solution for forming the second planarization layer 684 spreads in the direction of the stopper 682 is increased by the flatness improvement pattern 690, and the problem of the second planarization layer 684 protruding in the area in front of the stopper 682 (A in FIG. 3) can be prevented or minimized.

[0283] That is, each of the stopper 682 and the third dam DAM3 has a sealed square ring shape surrounding the display area DA, while the flatness improvement patterns 690 are spaced apart from each other.

[0284] The inorganic insulating film 674 can be surface-treated to further increase the rate at which the solution for forming the second planarization layer 684 spreads. For example, the inorganic insulating film 674 can be subjected to plasma treatment using oxygen (O2) gas. In this case, it is desirable not to perform surface treatment on the third dam DAM3.

[0285] Referring to FIGS. 6 and 10 of the present invention, in one embodiment of the present invention, the non-display area NDA includes a first non-display area NDA1 located in the first direction X with respect to the display area DA, a second non-display area NDA2 located in the second direction Y with respect to the display area DA, and an area between the first non-display area NDA1 and the second non-display area NDA2, that is, a third non-display area NDA3 which is a corner. The flatness improvement patterns 690, which are a plurality of concave patterns, can have the same shape, the same size, and be arranged with the same density in each of the first to third non-display areas NDA1 to NDA3.

[0286] Referring to FIGS. 7 and 10 of the present invention, in one embodiment of the present invention, the non-display area NDA includes a first non-display area NDA1 located in the first direction X with respect to the display area DA and a second non-display area NDA2 located in the second direction Y with respect to the display area DA. The flatness improvement patterns 690, which are a plurality of concave patterns, include a plurality of first flatness improvement patterns (a plurality of first concave patterns) located in the first non-display area NDA1 and a plurality of second flatness improvement patterns (a plurality of second concave patterns) located in the second non-display area NDA2. The plurality of first flatness improvement patterns can have a first density (spatial frequency), and the plurality of second flatness improvement patterns can have a second density smaller than the first density.

[0287] Also, the non-display area NDA further includes an area between the first non-display area NDA1 and the second non-display area NDA2, that is, a third non-display area NDA3 which is a corner. The flatness improvement patterns 690, which are a plurality of concave patterns, can further include a plurality of third flatness improvement patterns (a plurality of third concave patterns) located in the third non-display area NDA3. The plurality of third flatness improvement patterns can have a third density smaller than the first density and larger than the second density.

[0288] Referring to Figures 8 and 10, in one embodiment of the present invention, the non-display area NDA includes a first non-display area NDA1 located in a first direction X with respect to the display area DA, and a second non-display area NDA2 located in a second direction Y with respect to the display area DA. Furthermore, the flatness-improving pattern 690, which is a plurality of concave patterns, includes a plurality of first flatness-improving patterns (a plurality of first concave patterns) located in the first non-display area NDA1, and a plurality of second flatness-improving patterns (a plurality of second concave patterns) located in the second non-display area NDA2. The plurality of first flatness-improving patterns have a major axis in the first direction X and a minor axis in the second direction Y, and the plurality of second flatness-improving patterns may have a major axis in the second direction Y and a minor axis in the first direction X.

[0289] Furthermore, the non-display area NDA further includes the area between the first non-display area NDA1 and the second non-display area NDA2, i.e., the corner, which is the third non-display area NDA3. The flatness-enhancing pattern 690, which is a plurality of concave patterns, may further include a plurality of third flatness-enhancing patterns (a plurality of third concave patterns) located in the third non-display area NDA3. The plurality of third flatness-enhancing patterns may have a major axis in the third direction toward the display area DA, among the directions intersecting the first direction X and the second direction Y, and a minor axis in the fourth direction intersecting the first direction X, the second direction Y, and the third direction.

[0290] Furthermore, in one embodiment of the present invention, the non-display area NDA includes a first non-display area NDA1 located in a first direction X with respect to the display area DA, and a second non-display area NDA2 located in a second direction Y with respect to the display area DA. In addition, the flatness-improving pattern 690, which is a plurality of concave patterns, includes a plurality of first flatness-improving patterns (a plurality of first concave patterns) located in the first non-display area NDA1, and a plurality of second flatness-improving patterns (a plurality of second concave patterns) located in the second non-display area NDA2. The plurality of first flatness-improving patterns have a first depth, and the plurality of second flatness-improving patterns may have a second depth smaller than the first depth.

[0291] The non-display area NDA further includes a third non-display area NDA3, which is the area between the first non-display area NDA1 and the second non-display area NDA2, i.e., the corner, and the flatness-enhancing pattern 690, which is a plurality of concave patterns, may further include a plurality of third flatness-enhancing patterns (a plurality of third concave patterns) located in the third non-display area NDA3. The plurality of third flatness-enhancing patterns may have a third depth that is smaller than the first depth and larger than the second depth.

[0292] A second planarization layer 684 is provided on the upper part of the substrate 602 to cover and flatten the multiple lenses 680. The second planarization layer 684 can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. The organic insulating material constituting the lenses 680 has a first refractive index, and the organic insulating material constituting the second planarization layer 684 has a second refractive index that is smaller than the first refractive index.

[0293] The second flattening layer 684 may cover the multiple lenses 680, the flatness-improving pattern 690, and the stopper 682, and be formed over the entire region surrounded by the third dam DAM3. Alternatively, the second flattening layer 684 may cover the multiple lenses 680 and the flatness-improving pattern 690, and be formed over the entire region surrounded by the stopper 682.

[0294] Trench structure B acts as a buffer against the flow of solution for forming the second planarization layer 684. Between trench structure B, i.e., the organic layer 662b of the capsule sealing layer 662 and the first dam DAM1, the second planarization layer 684 has a greater thickness than the second planarization layer 684 in the indicated region DA.

[0295] After the solution for forming the second flattening layer 684 is dropped onto the display area DA, it spreads toward the non-display area NDA. However, the flatness-improving pattern 690 provided between the display area DA and the stopper 682 increases the flow rate of the solution for forming the second flattening layer 684, thereby improving the flatness of the second flattening layer 684.

[0296] Furthermore, the trench structure B defined by the organic layer 662b of the capsule sealing layer 662 and the first dam DAM1 regulates the flow of the solution for forming the second flattening layer 684. As a result, the solution for forming the second flattening layer 684 is prevented from flowing beyond the third dam DAM3, and the flatness of the second flattening layer 684 can be further improved.

[0297] Furthermore, the concave flatness-improving pattern 690 includes a first flatness-improving pattern located in a first non-display area NDA1 in a first direction X from the display area DA, a second flatness-improving pattern located in a second non-display area NDA2 in a second direction Y from the display area DA, and a third flatness-improving pattern located in a third non-display area NDA3, which is the corner between the first non-display area NDA1 and the second non-display area NDA2. The first flatness-improving pattern, the second flatness-improving pattern, and the third flatness-improving pattern differ in at least one of density, arrangement direction, and depth, thereby further improving the flatness of the second flattening layer 684 throughout the organic light-emitting display device 600.

[0298] The present invention has been described above based on exemplary embodiments and examples, but the present invention is not limited to the technical ideas described in these embodiments and examples. Rather, anyone with ordinary skill in the art to which the present invention belongs can easily deduce various modifications and variations based on the embodiments and examples described above. However, it will be clear from the claims that such modifications and variations fall within the scope of the rights of the present invention. [Explanation of symbols]

[0299] 100, 200, 200A, 200B, 200C, 600… Organic light-emitting display devices 102, 202, 602… circuit boards 210, 236… Semiconductor layer 150, 250, 650...first planarization layer 156, 256, 656... Pixel definition film 162, 262, 662… Capsule sealing layer 168, 268, 668… Black Matrix 172, 272, 672… Touch electrodes 170, 270, 670… Organic interlayer insulating films 174, 274, 674… Inorganic insulating films 180, 280, 680... lenses 182, 282, 682... Stopper 184, 284, 684...second flattening layer 290, 390, 392, 394, 396, 490, 492, 494, 496, 590, 592, 594, 596, 690… Flatness improvement pattern D...Organic light-emitting diode T1, T2... Thin-film transistors DA…display area NDA, NDA1, NDA2, NDA3…Hidden area

Claims

1. circuit board and The substrate comprises a display area and a non-display area outside the display area, In the aforementioned display area, a light-emitting diode is located on the substrate, An insulating film covering the light-emitting diode and positioned in the display area and the non-display area, In the display area, a plurality of lenses on the insulating film, In the non-display region, a stopper located on the insulating film, A plurality of first flatness-improving patterns located between the display area and the stopper, The plurality of lenses, the stopper, and the planarization layer covering the plurality of first flatness-improving patterns, The non-display area includes a first non-display area located in a first direction from the display area, and a second non-display area located in a second direction from the display area. The plurality of first flatness-improving patterns are located in the first non-display region and include convex or concave patterns in the display device.

2. The display device according to claim 1, characterized in that the plurality of first flatness-improving patterns are spaced apart from each other in the first direction and the second direction.

3. The display device according to claim 1, characterized in that each of the plurality of lenses has a major axis in the first direction and a minor axis in the second direction.

4. The second non-display area further includes a plurality of second flatness-improving patterns located between the display area and the stopper, The display device according to claim 3, characterized in that the density of the plurality of first flatness-improving patterns is greater than the density of the plurality of second flatness-improving patterns.

5. The present invention further includes a plurality of third flatness-improving patterns located at the corner between the first non-display region and the second non-display region, The display device according to claim 4, characterized in that the density of the plurality of third flatness-improving patterns is less than the density of the plurality of first flatness-improving patterns and greater than the density of the plurality of second flatness-improving patterns.

6. The display device according to claim 3, characterized in that each of the plurality of first flatness-improving patterns has a major axis in the first direction and a minor axis in the second direction.

7. The second non-display area further includes a plurality of second flatness-improving patterns located between the display area and the stopper, The display device according to claim 6, characterized in that each of the plurality of second flatness-improving patterns has a major axis in the second direction and a minor axis in the first direction.

8. The present invention further includes a plurality of third flatness-improving patterns located at the corner between the first non-display region and the second non-display region, The display device according to claim 7, characterized in that each of the plurality of third flatness-improving patterns has a major axis in a third direction that intersects the first direction and the second direction.

9. The second non-display area further includes a plurality of second flatness-improving patterns located between the display area and the stopper, The display device according to claim 3, characterized in that the height of the plurality of first flatness-improving patterns is greater than the height of the plurality of second flatness-improving patterns.

10. The present invention further includes a plurality of third flatness-improving patterns located at the corner between the first non-display region and the second non-display region, The display device according to claim 9, characterized in that the height of the plurality of third flatness-improving patterns is smaller than the height of the plurality of first flatness-improving patterns and larger than the height of the plurality of second flatness-improving patterns.

11. The second non-display area further includes a plurality of second flatness-improving patterns located between the display area and the stopper, The display device according to claim 3, characterized in that the depth of the plurality of first flatness-improving patterns is greater than the depth of the plurality of second flatness-improving patterns.

12. The present invention further includes a plurality of third flatness-improving patterns located at the corners between the first non-display region and the second non-display region, The display device according to claim 11, characterized in that the depth of the plurality of third flatness-improving patterns is smaller than the depth of the plurality of first flatness-improving patterns and larger than the depth of the plurality of second flatness-improving patterns.

13. The first dam located outside the stopper further includes, The display device according to claim 1, characterized in that the flattening layer extends to the first dam.

14. A second dam located between the first dam and the stopper, The second dam further includes a capsule sealing layer that covers it and is located beneath the insulating film, The capsule sealing layer has a structure in which a first inorganic film, an organic film, and a second inorganic film are stacked. Each of the first inorganic film and the second inorganic film covers the second dam, and the organic film is spaced apart from the second dam. The display device according to claim 13, characterized in that, between the second dam and the capsule sealing layer, the planarization layer is thicker than the planarization layer in the display area.

15. The display device according to claim 1, characterized in that the density of the plurality of first flatness-improving patterns is greater than the density of the plurality of lenses.

16. Each of the plurality of first flatness-improving patterns is the convex pattern and has a first height, The display device according to claim 1, characterized in that each of the plurality of first flatness-improving patterns and each of the plurality of lenses has a second height greater than the first height.

17. The display device according to claim 16, characterized in that the stopper has a third height that is greater than the first height and equal to or less than the second height.

18. The display device according to claim 1, characterized in that the plurality of first flatness-improving patterns have a first distance from the display area and a second distance from the stopper that is smaller than the first distance.

19. In the second non-display area, a plurality of second flatness-improving patterns are located between the display area and the stopper, The present invention further includes a plurality of third flatness-improving patterns located at the corner between the first non-display region and the second non-display region, Each of the plurality of first flatness-improving patterns, the plurality of second flatness-improving patterns, and the plurality of third flatness-improving patterns is the convex pattern, The display device according to claim 1, characterized in that the plurality of first flatness-improving patterns, the plurality of second flatness-improving patterns, and the plurality of third flatness-improving patterns differ in at least one of density, arrangement direction, and height.

20. In the second non-display area, a plurality of second flatness-improving patterns are located between the display area and the stopper, The present invention further includes a plurality of third flatness-improving patterns located at the corner between the first non-display region and the second non-display region, Each of the plurality of first flatness-improving patterns, the plurality of second flatness-improving patterns, and the plurality of third flatness-improving patterns is the concave pattern, The display device according to claim 1, characterized in that the plurality of first flatness-improving patterns, the plurality of second flatness-improving patterns, and the plurality of third flatness-improving patterns differ in at least one of density, arrangement direction, and depth.

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