Display panels and mobile terminals

Abstract

The present invention provides a display panel and a mobile terminal, comprising: a substrate; an anode reflective layer located on the substrate; an anode layer located on the anode reflective layer; an emission layer located on the anode layer; and an auxiliary layer located between the anode reflective layer and the anode layer, the auxiliary layer having a thickness equal to or greater than a first threshold, wherein a plurality of anode portions in the anode layer are electrically connected to a plurality of anode reflective portions in a one-to-one correspondence, and a plurality of emission portions in the emission layer are electrically connected to a plurality of anode portions in a one-to-one correspondence.

Description

Technical Field

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[0005]

[0001] The present invention relates to the technical field of displays, particularly to the manufacture of display devices, and specifically to display panels and mobile terminals.

Background Art

[0002] An OLED (Organic Light-Emitting Diode) display panel emits light through the injection and recombination of carriers, and has advantages such as being thin, having high brightness, low power consumption, fast response, and high definition.

[0003] Each light-emitting material has different light-emitting efficiencies at different microcavity lengths, and the microcavity lengths corresponding to the high light-emitting efficiencies of different light-emitting materials are also different. Currently, the microcavity length corresponding to the high light-emitting efficiency of commonly used light-emitting materials is long, and in order to achieve high light-emitting efficiency, it is necessary to set the thicknesses of the plurality of film layers constituting the microcavity to be large. In a top-emission type OLED display panel, when the light-emitting layer is set thick, the absorption of light increases, and when the anode layer is set thick, it affects the etching quality. As a result, there is a limit to the increase in the microcavity length.

[0004] Therefore, in a conventional top-emission type OLED display panel, the limited microcavity length reduces the light-emitting efficiency of the light-emitting material and reduces the screen brightness of the OLED display panel.

Summary of the Invention

Problems to be Solved by the Invention

[0005] An object of the present invention is to provide a display panel and a mobile terminal in order to solve the technical problem that the screen brightness of the display panel is low because the light-emitting efficiency of the conventional light-emitting material is low.

Means for Solving the Problems

[0006] An embodiment of the present invention is circuit board and An anode reflection layer located on the substrate and including multiple anode reflection portions, An anode layer located on the anode reflection layer and including a plurality of anode portions corresponding to a plurality of anode reflection portions, each anode portion being electrically connected to the corresponding anode reflection portion, A light-emitting layer located on the anode layer and including a plurality of light-emitting units that correspond one-to-one with a plurality of anode units, each of which is electrically connected to the corresponding anode unit, It includes an auxiliary layer located between the anode reflective layer and the anode layer, and having a thickness equal to or greater than a first threshold, The auxiliary layer is provided with a plurality of first via holes corresponding to a plurality of anode portions, the constituent material of the auxiliary layer includes an insulating material, and each anode portion is electrically connected to the corresponding thin-film transistor via the corresponding first via hole. The present invention provides a display panel in which the sum of the thickness of the auxiliary layer and the thickness of the anode layer is 600 angstroms or more.

[0007] In one embodiment, the constituent material of the auxiliary layer includes aluminum oxide or silicon oxide.

[0008] In one embodiment, the auxiliary layer includes a plurality of auxiliary parts corresponding to a plurality of anode parts, the constituent material of the plurality of auxiliary parts includes a conductive material, and each anode part is electrically connected to the corresponding auxiliary part so as to be electrically connected to the corresponding thin-film transistor.

[0009] In one embodiment, the first threshold is 200 angstroms.

[0010] In one embodiment, the plurality of light-emitting units include a first light-emitting unit and a second light-emitting unit, and the wavelength of light emitted from the first light-emitting unit and the wavelength of light emitted from the second light-emitting unit are different. The sum of the thicknesses of the auxiliary layer and the portion of the anode layer corresponding to the first light-emitting portion is defined as the first thickness, and the sum of the thicknesses of the auxiliary layer and the portion of the anode layer corresponding to the second light-emitting portion is defined as the second thickness, wherein the first thickness and the second thickness are different.

[0011] In one embodiment, the display panel is The anode reflection layer is located on the side of the auxiliary layer that is farther from the auxiliary layer and includes a plurality of thin-film transistors that correspond one-to-one with a plurality of anode reflection portions, and further includes a thin-film transistor layer in which each thin-film transistor is electrically connected to the corresponding anode reflection portion. The hydrogen barrier ratio of the auxiliary layer is greater than 80%.

[0012] In one embodiment, the display panel is The material further includes a planarization layer provided overall between the thin-film transistor layer and the anode reflection layer, and having a plurality of second via holes corresponding to a plurality of the thin-film transistors, Each anode reflector extends to the bottom of the corresponding second via hole so as to be electrically connected to the corresponding thin-film transistor.

[0013] Examples of the present invention include: circuit board and An anode reflection layer located on the substrate and including multiple anode reflection portions, An anode layer located on the anode reflection layer and including a plurality of anode portions corresponding to a plurality of anode reflection portions, each anode portion being electrically connected to the corresponding anode reflection portion, A light-emitting layer located on the anode layer and including a plurality of light-emitting units that correspond one-to-one with a plurality of anode units, each of which is electrically connected to the corresponding anode unit, The present invention provides a display panel including an auxiliary layer located between the anode reflective layer and the anode layer, the auxiliary layer having a thickness equal to or greater than a first threshold.

[0014] In one embodiment, a plurality of first via holes corresponding to the plurality of anode portions are provided in the auxiliary layer, the constituent material of the auxiliary layer includes an insulating material, and each anode portion is electrically connected to a corresponding thin film transistor through the corresponding first via hole.

[0015] In one embodiment, the constituent material of the auxiliary layer includes aluminum oxide or silicon oxide.

[0016] In one embodiment, the auxiliary layer includes a plurality of auxiliary portions corresponding to the plurality of anode portions, the constituent material of the plurality of auxiliary portions includes a conductive material, and each anode portion is electrically connected to the corresponding auxiliary portion so as to be electrically connected to the corresponding thin film transistor.

[0017] In one embodiment, the sum of the thickness of the auxiliary layer and the thickness of the anode layer is 600 angstroms or more.

[0018] In one embodiment, the first threshold value is 200 angstroms.

[0019] In one embodiment, the plurality of light emitting portions include a first light emitting portion and a second light emitting portion, and the wavelength of the light emitted from the first light emitting portion is different from the wavelength of the light emitted from the second light emitting portion. The sum of the thicknesses of the portions of the auxiliary layer and the anode layer corresponding to the first light emitting portion is defined as the first thickness, the sum of the thicknesses of the portions of the auxiliary layer and the anode layer corresponding to the second light emitting portion is defined as the second thickness, and the first thickness is different from the second thickness.

[0020] In one embodiment, the display panel is located on the side of the anode reflective layer far from the auxiliary layer, further includes a thin film transistor layer including a plurality of thin film transistors that correspond one-to-one to the plurality of anode reflective portions, and each thin film transistor is electrically connected to the corresponding anode reflective portion. The hydrogen barrier rate of the auxiliary layer is greater than 80%.

[0021] In one embodiment, the display panel is further includes a planarization layer provided entirely between the thin film transistor layer and the anode reflective layer, and provided with a plurality of second via holes corresponding to the plurality of thin film transistors. Each of the anode reflective portions extends to the bottom of the corresponding second via hole so as to be electrically connected to the corresponding thin film transistor.

[0022] An embodiment of the present invention provides a mobile terminal including a terminal main body and the display panel according to any one of the above descriptions, wherein the terminal main body is integrated with the display panel.

Effect of the Invention

[0023] The present invention provides a display panel and a mobile terminal. The display panel includes a substrate, an anode reflective layer located on the substrate and including a plurality of anode reflective portions, an anode layer located on the anode reflective layer and including a plurality of anode portions corresponding to the plurality of anode reflective portions, each anode portion being electrically connected to the corresponding anode reflective portion, a light emitting layer located on the side of the anode layer far from the substrate and including a plurality of light emitting portions corresponding one-to-one to the plurality of anode portions, each light emitting portion being electrically connected to the corresponding anode portion, and an auxiliary layer located between the anode reflective layer and the side of the anode layer far from the light emitting layer and having a thickness greater than or equal to a first threshold value. In the present invention, by setting the thickness of the auxiliary layer to be greater than or equal to the first threshold value, the thickness of the auxiliary layer is made sufficiently large, so that the microcavity length corresponding to the light emitting layer is increased, and the light emitting layer has a high light emitting efficiency, thereby improving the screen brightness of the display panel.

Brief Description of the Drawings

[0024] Hereinafter, the present invention will be further described with reference to the drawings. It should be noted that the drawings in the following description are only for interpreting some embodiments of the present invention, and those skilled in the art can also derive other drawings from these drawings without creative efforts. [Figure 1]Figure 1 is a schematic cross-sectional view of a first display panel according to an embodiment of the present invention. [Figure 2] Figure 2 is a schematic cross-sectional view of a second display panel according to an embodiment of the present invention. [Figure 3] Figure 3 is a schematic cross-sectional view of a third display panel according to an embodiment of the present invention. [Figure 4] Figure 4 is a schematic cross-sectional view of a fourth display panel according to an embodiment of the present invention. [Modes for carrying out the invention]

[0025] The technical means in embodiments of the present invention will be described clearly and completely below with reference to the drawings of the embodiments. It is clear that the embodiments described are not all embodiments, but only some embodiments of the present invention. All other embodiments obtained by those skilled in the art without creative effort based on the embodiments of the present invention are all within the scope of protection of the present invention.

[0026] In this description of the present invention, directions or positional relationships indicated by terms such as “up,” “down,” “near,” and “far” are based on the directions or positional relationships shown in the drawings. For example, “up” simply means that the surface is above the object, and specifically, it may refer to directly above, obliquely above, or the top surface, as long as it is above the horizontal plane of the object. “Both sides” or “both ends” refers to two opposing positions on the object that may be shown in the drawings and may be in direct or indirect contact with the object. These directions or positional relationships are merely for the purpose of facilitating and simplifying the description of the present invention and are not intended to indicate or imply that the devices or elements mentioned have a particular direction, or must be configured and operate in a particular direction, and should therefore not be understood as limiting the present invention.

[0027] Furthermore, the drawings only provide structures and processes that are closely related to the present invention, omitting details that are not closely related to the present invention, and simplifying the drawings so that the content of the invention can be understood at a glance. This does not indicate that the actual apparatus and method are identical to those shown in the drawings, nor does it limit the actual apparatus and method.

[0028] The present invention provides a display panel that includes, but is not limited to, the following embodiments and combinations thereof.

[0029] In one embodiment, as shown in Figures 1 to 3, the display panel 100 includes a substrate 10, an anode reflective layer located on the substrate 10 and including a plurality of anode reflective portions 60, an anode layer located on the anode reflective layer and including a plurality of anode portions 20 corresponding to the plurality of anode reflective portions 60, with each anode portion 20 electrically connected to the corresponding anode reflective portion 60, an light-emitting layer located on the anode layer and including a plurality of light-emitting portions 30 corresponding one-to-one to the plurality of anode portions 20, with each light-emitting portion 30 electrically connected to the corresponding anode portion 20, and an auxiliary layer 40 located between the anode reflective layer and the anode layer and having a thickness of a first threshold or greater. The substrate 10 may be a rigid substrate or a flexible substrate, and the rigid substrate may be glass or a silicon wafer. The constituent materials of the rigid substrate may include, but are not limited to, at least one of quartz powder, strontium carbonate, barium carbonate, boric acid, boric anhydride, aluminum oxide, calcium carbonate, barium nitrate, magnesium oxide, tin oxide, and zinc oxide. The flexible substrate may be a polymer material substrate, a metal foil substrate, an ultrathin glass substrate, a composite substrate of polymer and inorganic material, or a composite substrate of polymer, organic material, and inorganic material. The polymer material may include at least one of polyethylene, polypropylene, polystyrene, polyethylene terephthalate, polyethylene naphthalate, and polyimide.

[0030] The display panel 100 may be a top-emission type display panel. The constituent material of the anode reflective layer may be a light-reflective material. Furthermore, the constituent material of the anode reflective layer may be a metallic material that reflects the light emitted from the light-emitting layer onto the light-emitting surface to improve the efficiency of light utilization. For example, the constituent material of the anode reflective layer may be silver or aluminum, but is not limited to these. Specifically, a plurality of anode reflective portions 60 may be formed by patterning, and further, an auxiliary layer 40 may be formed on the anode reflective layer, and a plurality of anode portions 20 corresponding to the plurality of anode reflective portions 60 may be formed on the auxiliary layer 40 by patterning.

[0031] Specifically, a cathode layer may be further provided on the light-emitting layer, and the cathode layer may be provided over the entire surface, or the cathode layer may be provided corresponding to a plurality of light-emitting parts 30. Each light-emitting part 30 has a corresponding microcavity length. The microcavity length may be defined as the vertical distance from the upper surface of the anode reflective layer to the lower surface of the cathode layer, and may include the sum of the thicknesses of the corresponding anode part 20 and the corresponding light-emitting part 30, which may affect the luminous efficiency of the corresponding light-emitting part 30. Furthermore, the light-emitting layer can be manufactured using white organic light-emitting diode technology. That is, each light-emitting part 30 can achieve white light by a laminated structure of two layers such as "blue + yellow" or three layers such as "blue + red + green". In this case, the recombined light-emitting part 30 may have a corresponding microcavity length. The constituent material of the anode part 20 may be indium tin oxide, but is not limited thereto. The light-emitting portion 30 may be an organic light-emitting diode light-emitting element, a micro light-emitting diode, or other self-luminous element, but is not limited to these. The light-emitting portion 30 may be formed by an inkjet printer or by vapor deposition.

[0032] Specifically, in this embodiment, the auxiliary layer 40 is added to the side of the anode layer furthest from the light-emitting layer. The first threshold is understood to be the minimum thickness of the auxiliary layer 40, and the value of the first threshold can be determined based on the sum of the thickness of the constituent material of the light-emitting unit 30 and the thickness of other film layers that constitute the microcavity. Here, it is emphasized that the thickness of the auxiliary layer 40 is at least the first threshold, so that the luminous efficiency of the light-emitting layer can meet the requirements. In this embodiment, it should be understood that the luminous efficiency of the light-emitting unit 30 can be significantly improved and the brightness of the display screen of the display panel can be improved by increasing the microcavity length corresponding to each of the light-emitting units 30 without increasing the thickness of both the anode layer and the light-emitting layer.

[0033] In one embodiment, as shown in Figure 1, the sum of the thickness of the auxiliary layer 40 and the thickness of the anode layer is 600 angstroms or more. Specifically, as can be seen from the above description, the microcavity length corresponding to the lowest value of high luminous efficiency can be determined based on at least one of the constituent materials of the light-emitting section 30 and the wavelength of the emitted light, and the sum of the thickness of the corresponding auxiliary layer 40 and the thickness of the anode layer can be determined based on the sum of the thicknesses of the other film layers constituting the microcavity. The "microcavity length corresponding to the lowest value of high luminous efficiency" can be determined by simulation, and furthermore, the "sum of the thickness of the corresponding auxiliary layer 40 and the thickness of the anode layer" can be determined as the minimum value of the sum of the thickness of the auxiliary layer 40 and the thickness of the anode layer.

[0034] In one embodiment, the first threshold is 200 angstroms. As can be seen from the above description, as shown in Figure 1, the thickness of the auxiliary layer 40 is greater than or equal to the first threshold, that is, the first threshold is the minimum thickness of the auxiliary layer 40. As can be seen from the above description, the minimum sum of the thickness of the auxiliary layer 40 and the thickness of the anode layer can be obtained by simulation. Here, the minimum thickness of the auxiliary layer 40 can be further determined based on the properties of the constituent material of the anode layer and the properties of its manufacturing method. Specifically, here, when a plurality of anode portions 20 are formed by etching using a material containing indium tin oxide, the maximum thickness of the anode layer is 400 angstroms, so the minimum thickness of the auxiliary layer 40 can be 200 angstroms, that is, the first threshold can be 200 angstroms.

[0035] Specifically, when forming a plurality of anode portions 20 by etching using a material containing indium tin oxide, the sum of the thickness of the auxiliary layer 40 and the thickness of the anode layer may be 800 angstroms. For example, if the thickness of the anode layer is 400 angstroms, the thickness of the auxiliary layer 40 may be 400 angstroms, and if the thickness of the anode layer is 200 angstroms, the thickness of the auxiliary layer 40 may be 600 angstroms.

[0036] In one embodiment, as shown in Figure 2, the plurality of light-emitting units 30 include a first light-emitting unit 301 and a second light-emitting unit 302. The wavelength of light emitted from the first light-emitting unit 301 is different from the wavelength of light emitted from the second light-emitting unit 302. If the thickness of the auxiliary layer 40 and the anode layer relative to the first light-emitting unit 301 is defined as the first thickness L1, and the thickness of the auxiliary layer 40 and the anode layer relative to the second light-emitting unit 302 is defined as the second thickness L2, then the first thickness L1 and the second thickness L2 are different.

[0037] Specifically, the first light-emitting section 301 and the second light-emitting section 302 emit light of different colors. That is, the wavelength of the light emitted from the first light-emitting section 301 and the wavelength of the light emitted from the second light-emitting section 302 are considered to be different. In line with the above explanation, the microcavity lengths corresponding to the lowest values ​​of high luminous efficiency for the two light-emitting sections 30 that emit light of different wavelengths are generally different. That is, when considering high luminous efficiency simultaneously, the preferred microcavity length for the first light-emitting section 301 is different from the preferred microcavity length for the second light-emitting section 302. Similarly, as shown in Figure 2, if the plurality of light-emitting parts 30 further include a third light-emitting part 303 whose emitted light wavelength is different from both the wavelength of light emitted from the first light-emitting part 301 and the wavelength of light emitted from the second light-emitting part 302, then if the thickness of portion A3 of the auxiliary layer 40 and the anode layer relative to the third light-emitting part 303 is defined as the third thickness L3, then the third thickness L3 is different from both the first thickness L1 and the second thickness L2. Specifically, if we take the example of defining the thickness of portion A1 of the auxiliary layer 40 and the anode layer relative to the first light-emitting part 301 as the first thickness L1, then the first thickness L1 can be understood as the distance between the upper surface of the corresponding anode reflector 60 and the upper surface of the corresponding anode part 20.

[0038] For each of the light-emitting sections 30, the microcavity length may include the sum of the thicknesses of the corresponding anode section 20 and the portion of the auxiliary layer 40. This embodiment contributes to differentiating the microcavity lengths for multiple light-emitting sections 30 with different wavelengths of emitted light, by setting the thicknesses of the auxiliary layer 40 and the corresponding portions of the anode layer to be different for multiple light-emitting sections 30 with different wavelengths of emitted light, while taking into full consideration the differences in the wavelengths of light emitted from the multiple light-emitting sections 30, thereby contributing to improving the luminous efficiency of each light-emitting section 30.

[0039] In one embodiment, as shown in Figure 3, the display panel 100 includes a plurality of thin-film transistors 50 located on the side of the anode reflective layer furthest from the auxiliary layer 40, with a one-to-one correspondence to a plurality of anode reflective portions 60. Each of the thin-film transistors 50 further includes a thin-film transistor layer electrically connected to the corresponding anode reflective portion 60, and the hydrogen barrier ratio of the auxiliary layer 40 is greater than 80%.

[0040] Specifically, as shown in Figure 3, each thin-film transistor 50 includes an active layer 501, a gate insulating layer 502 located on the active layer 501, a gate layer 503 located on the gate insulating layer 502, an interlayer insulating layer 504 covering the active layer 501, the gate insulating layer 502, and the gate layer 503, and a source 505 and a drain 506 located on the interlayer insulating layer 504. The active layer 501 includes a main body 507 and two doping portions 508 located at both ends of the main body 507. The interlayer insulating layer 504 is provided with a plurality of third via holes 509, the source 505 is electrically connected to one of the doping portions 508 via one of the third via holes 509, and the drain 506 is electrically connected to the other doping portion 508 via the other third via hole 509. The thin-film transistor 50 may have a bottom-gate structure or a top-gate structure, and the top-gate structure may be the structure of the thin-film transistor 50 as shown in Figure 3, but is not limited thereto.

[0041] The constituent material of the active layer 501 includes a metal oxide. Specifically, the constituent material of the active layer 501 may include indium gallium zinc oxide, indium gallium tin oxide, indium gallium oxide, indium zinc oxide, aluminum indium zinc oxide, indium gallium zinc tin oxide, or other metal oxides. Furthermore, the constituent material of the active layer 501 may also include an amorphous metal oxide. Note that the active layer 501 made of a metal oxide is extremely sensitive to the element of hydrogen, and if the element of hydrogen diffuses into the active layer 501 from the side of the light-emitting layer furthest from the substrate 10, it will affect parameters such as the threshold voltage of the thin-film transistor 50 and reduce the operational reliability of the thin-film transistor 50.

[0042] In this embodiment, the auxiliary layer 40 is located on the side of the thin-film transistor layer furthest from the substrate 10 and is situated between the thin-film transistor layer and the anode reflection layer. That is, the auxiliary layer 40 is located on the side of the thin-film transistor layer closer to the external hydrogen element and is close to the thin-film transistor layer. In other words, the auxiliary layer 40 in this embodiment is configured to increase the microcavity length corresponding to each of the light-emitting parts 30 to improve the luminescence efficiency of the light-emitting parts 30, and is configured to block the diffusion of the hydrogen element into the thin-film transistor layer by using reasonable materials and thickness. Furthermore, it should be understood that by limiting the hydrogen barrier ratio of the auxiliary layer 40 to greater than 80%, the hydrogen barrier effect of the auxiliary layer 40 can be further ensured.

[0043] Here, the auxiliary layer 40 with a hydrogen barrier ratio greater than 80% can be determined by the TDS (Thermal Desorption Spectroscopy) method. Thermal desorption is a desorption method that uses heating and inert gas purging to dissolve volatile substances from a solid or liquid sample and transports the volatile substances to an analysis system using a carrier gas. Specifically, a first substrate including a glass substrate and a silicon nitride layer located on the glass substrate is manufactured in advance, and the hydrogen element content in the sealed environment is measured as the first content by heating it to a preset temperature in a sealed environment. Based on this, a simulation layer can be manufactured on the silicon nitride layer, and parameters such as the material and thickness of the simulation layer can be adjusted multiple times to match. Then, the simulation layer is heated to the preset temperature in a sealed environment, and the hydrogen element content in the sealed environment is measured as the second content. The ratio of the second content to the first content is greater than 80%, for example, it may be 85%. The simulation layer at this time can be the auxiliary layer 40. Here, the preset temperature may be the temperature required to manufacture the thin-film transistor 50, and the preset temperature may be 300°C. Furthermore, in combination with the TDS method described above, the auxiliary layer 40 in this embodiment can reduce the content of hydrogen elements diffusing into the active layer 501 to 20% compared to the case where the auxiliary layer 40 is not provided, thereby achieving an 80% barrier to hydrogen elements.

[0044] In one embodiment, as shown in Figure 3, the display panel 100 further includes a planarization layer 11 provided overall between the thin-film transistor layer and the anode reflection layer, and having a plurality of second via holes 901 corresponding to a plurality of thin-film transistors 50. Each anode reflection portion 60 extends to the bottom of the corresponding second via hole 901 so as to be electrically connected to the corresponding thin-film transistor 50.

[0045] The constituent material of the planarization layer 11 may be an insulating material. Specifically, as shown in Figure 3, the display panel 100 further includes a plurality of light-shielding portions 70 located on the side of the substrate 10 closer to the thin-film transistor layer, a buffer layer 80 covering the plurality of light-shielding portions 70 and the substrate 10, a passivation layer 90 covering the plurality of thin-film transistors 50, the planarization layer 11 located on the passivation layer 90, a plurality of anode reflection portions 60 located on the planarization layer 11, and an auxiliary layer 40 that can cover the planarization layer 11 and the plurality of anode portions 20. Furthermore, a pixel definition portion 12 may be formed between two adjacent light-emitting portions 30 on the auxiliary layer 40, and the plurality of pixel definition portions 12 and the plurality of light-emitting portions 30 may be covered with a continuous cathode layer 13, and a sealing layer 14 and a cover plate 15 may be sequentially provided on the cathode layer 13.

[0046] The constituent material of the multiple light-shielding portions 70 includes a metallic material, and each light-shielding portion 70 reflects light from the substrate 10 side to the side farther from the active layer 501, thereby increasing the efficiency of light utilization and reducing the transmittance of light from the substrate 10 side, preventing light from irradiating the active layer 501 and degrading the operational reliability of the thin-film transistor 50. The constituent material of the buffer layer 80 may include, but is not limited to, silicon oxide, silicon nitride, or silicon oxynitride. The constituent material of the gate layer 503 may include, but is not limited to, copper, aluminum, molybdenum, or titanium, and of course may include metal oxides, metal nitrides, or metal oxynitride. The constituent material of the gate insulating layer 502 may include, but is not limited to, silicon oxide or silicon nitride. The constituent material of the interlayer insulating layer 504 may include, but is not limited to, silicon oxide, silicon nitride, or silicon oxynitride. The constituent materials of the source 505 and the drain 506 may include, but are not limited to, molybdenum, aluminum, copper, titanium, indium tin oxide, or copper niobium alloy. Furthermore, the second via hole 901 may extend through the passivation layer 90, and each anode reflector 60 extends to the bottom of the second via hole 901 so as to be electrically connected to the corresponding drain 506. In combination with the above description, each anode 20 is electrically connected to the corresponding drain 506 via the anode reflector 60 so as to be applied to the first voltage. The cathode layer 13 may have a second voltage. Each light-emitting unit 30 generates current and emits light in response to the action of the first and second voltages.

[0047] Furthermore, during the manufacturing of the sealing layer 14 and during the measurement of the reliability of the display panel 100, since the constituent materials of the multiple pixel definition units 12 include organic materials, if external hydrogen elements permeate through the multiple pixel definition units 12 and diffuse into the multiple thin-film transistors 50 and then into the active layer 501, the operational reliability of the thin-film transistors 50 will decrease. It should be understood that the present invention can improve the operational reliability of the thin-film transistors 50 by preventing the diffusion of hydrogen elements into the active layer 501 by providing the auxiliary layer 40 between the anode layer and the anode reflection layer.

[0048] In one embodiment, as shown in Figure 3, the auxiliary layer 40 is provided with a plurality of first via holes 401 corresponding to a plurality of anode portions 20. The constituent material of the auxiliary layer 40 includes an insulating material, and each anode portion 20 is electrically connected to the corresponding thin-film transistor 50 via the corresponding first via hole 401. Specifically, as shown in Figure 3, in the auxiliary layer 40, a portion between two adjacent first via holes 401 may be continuously provided such that the projection of the auxiliary layer 40 on the anode layer covers the anode portion 20 and the region between two adjacent anode portions 20. Each anode portion 20 may extend and be electrically connected to the corresponding thin-film transistor 50 via the corresponding first via hole 401.

[0049] In this embodiment, the portion of the auxiliary layer 40 excluding the multiple first via holes 401 is provided continuously, so that it can cover the film layer located on the side of the auxiliary layer 40 far from the anode layer, and so that the diffusion path of external hydrogen elements to the multiple thin-film transistors 50 can be sufficiently blocked, and the hydrogen barrier effect of the auxiliary layer 40 can be further enhanced. Furthermore, the portion of the auxiliary layer 40 between two adjacent first via holes 401 is connected between two adjacent anode portions 20, and since the constituent material of the auxiliary layer 40 in this embodiment includes an insulating material, the two adjacent anode portions 20 can be electrically connected to prevent short circuits. Specifically, a plurality of anode reflective portions 60 can be formed by patterning, aluminum oxide can be deposited further, a plurality of first via holes 401 can be opened to form the auxiliary layer 40, indium tin oxide can be deposited further, and a plurality of anode portions 20 extending into the plurality of first via holes 401 can be formed by patterning, and the total thickness of the plurality of anode portions 20 and the auxiliary layer 40 can be found in the related explanation above.

[0050] In one embodiment, as shown in Figure 3, the constituent material of the auxiliary layer 40 includes aluminum oxide or silicon oxide. Both aluminum oxide and silicon oxide can block the diffusion of hydrogen elements into the thin-film transistor layer and can be formed as a transparent auxiliary layer 40 to increase light transmittance. The light transmittance of the auxiliary layer 40 may be greater than 20% and even greater than 98%. Furthermore, the auxiliary layer 40 can be manufactured from highly dense aluminum oxide to further increase the hydrogen barrier ratio of the auxiliary layer 40.

[0051] In one embodiment, as shown in Figure 4, the auxiliary layer 40 includes a plurality of auxiliary parts 402 corresponding to a plurality of anode parts 20. The constituent material of the plurality of auxiliary parts 402 includes a conductive material. Each anode part 20 is electrically connected to the corresponding auxiliary part 402 so as to be electrically connected to the corresponding thin-film transistor. Note that in Figure 3, the projection of the auxiliary layer 40 on the anode layer covers the anode part 20 and the region between two adjacent anode parts 20, but in this embodiment, the auxiliary layer 40 is not provided between two adjacent anode parts 20, and each auxiliary part 402 is located between the corresponding anode part 20 and the corresponding thin-film transistor. In this embodiment, the constituent material of the plurality of auxiliary parts 402 includes a conductive material having high conductivity so as to electrically connect each anode part 20 to the corresponding thin-film transistor.

[0052] The present invention provides a portable terminal comprising a terminal body and a display panel as described above, wherein the terminal body is integrated with the display panel.

[0053] The present invention provides a display panel and a mobile terminal, the display panel comprising: a substrate; an anode reflective layer located on the substrate and including a plurality of anode reflective portions; an anode layer located on the anode reflective layer and including a plurality of anode portions corresponding to the plurality of anode reflective portions, each of which is electrically connected to the corresponding anode reflective portion; a light-emitting layer located on the side of the anode layer far from the substrate and including a plurality of light-emitting portions corresponding one-to-one to the plurality of anode portions, each of which is electrically connected to the corresponding anode portion; and an auxiliary layer located between the anode reflective layer and the side of the anode layer far from the light-emitting layer, with a thickness of 1 threshold or more. In the present invention, by making the thickness of the auxiliary layer 1 threshold or more, the thickness of the auxiliary layer is made sufficiently large, thereby increasing the microcavity length corresponding to the light-emitting layer, and the light-emitting layer having high luminous efficiency, thereby improving the screen brightness of the display panel.

[0054] The display panel and mobile terminal according to embodiments of the present invention have been described in detail above. While this specification has described the principles and embodiments of the present invention using specific examples, the above description of embodiments is merely intended to aid in understanding the technical means and core idea of ​​the present invention. Those skilled in the art should understand that, as long as the intent of the corresponding technical means does not deviate from the scope of the technical means of each embodiment of the present invention, the technical means described in the above embodiments can still be modified or some of their technical features can be replaced with equivalent ones.

Claims

1. circuit board and An anode reflection layer located on the substrate and including multiple anode reflection portions, An anode layer located on the anode reflection layer and including a plurality of anode portions corresponding to a plurality of anode reflection portions, each anode portion being electrically connected to the corresponding anode reflection portion, A light-emitting layer located on the anode layer and including a plurality of light-emitting units that correspond one-to-one with a plurality of anode units, each of which is electrically connected to the corresponding anode unit, A display panel comprising: an auxiliary layer, the auxiliary layer located between the anode reflection layer and the anode layer, the thickness of the auxiliary layer being greater than or equal to a first threshold, the orthographic projection of the auxiliary layer on the anode layer covering a plurality of anode portions and the region between two adjacent anode portions, the constituent material of the auxiliary layer being an insulating material, and the hydrogen barrier ratio of the auxiliary layer being greater than 80%; The sum of the thickness of the auxiliary layer and the thickness of the anode layer is 600 angstroms or more. The first threshold is 200 angstroms. The aforementioned display panel is A display panel further comprising a thin-film transistor layer located on the side of the anode reflective layer furthest from the auxiliary layer, and including a plurality of thin-film transistors corresponding one-to-one to a plurality of anode reflective portions, wherein each thin-film transistor is electrically connected to the corresponding anode reflective portion.

2. The display panel according to claim 1, wherein the auxiliary layer is provided with a plurality of first via holes corresponding to a plurality of anode portions, and each anode portion is electrically connected to a corresponding thin-film transistor via the corresponding first via hole.

3. The display panel according to claim 2, wherein the constituent material of the auxiliary layer comprises aluminum oxide or silicon oxide.

4. The plurality of light-emitting units include a first light-emitting unit and a second light-emitting unit, wherein the wavelength of light emitted from the first light-emitting unit and the wavelength of light emitted from the second light-emitting unit are different. The display panel according to claim 1, wherein the sum of the thicknesses of the auxiliary layer and the portion of the anode layer corresponding to the first light-emitting part is defined as the first thickness, and the sum of the thicknesses of the auxiliary layer and the portion of the anode layer corresponding to the second light-emitting part is defined as the second thickness, and the first thickness and the second thickness are different.

5. The aforementioned display panel is The material further includes a planarization layer provided entirely between the thin-film transistor layer and the anode reflection layer, and having a plurality of second via holes corresponding to a plurality of the thin-film transistors, The display panel according to claim 1, wherein each of the anode reflectors extends to the bottom of the corresponding second via hole so as to be electrically connected to the corresponding thin-film transistor.

6. A portable terminal comprising a terminal body and a display panel according to any one of claims 1 to 5, wherein the terminal body is integrated with the display panel.

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