Stacked filter device

Abstract

To provide a laminated filter device that can be miniaturized while achieving the desired characteristics.SOLUTION: A filter device 1 includes a resonator 12, a resonator 15, and resonators 13 and 14 arranged between the resonator 12 and the resonator 15 in terms of circuit configuration. Due to the circuit configuration, no capacitor element is present between the first end of at least one of the resonators 12 to 15 and the ground. The resonator 12 and the resonator 15 are arranged at the same position in the stacking direction T of the plurality of dielectric layers. The resonators 13 and 14 are arranged at different positions from the resonator 12 and the resonator 15 in the stacking direction T.SELECTED DRAWING: Figure 12

Description

Technical Field

[0001] The present invention relates to a laminated filter device including a resonator formed of a distributed constant line.

Background Art

[0002] One of the electronic components used in communication devices is a band-pass filter including a plurality of resonators. Each of the plurality of resonators is configured by, for example, a distributed constant line. The distributed constant line is configured to have a predetermined line length.

[0003] Patent Document 1 discloses a high-frequency filter including two resonators. In this high-frequency filter, by providing capacitors between each end of the two resonators and the ground, the physical lengths of the two resonators are shortened.

[0004] Patent Document 2 discloses a band-pass filter including six resonators.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0006] Miniaturization is particularly important for bandpass filters used in small communication devices. To address this, for example, the technology described in Patent Document 1 makes it possible to shorten the physical length of the resonator. Here, a resonator with a capacitor between its end and ground is called the first resonator, and a resonator having the same or nearly the same resonant frequency as the first resonator but without a capacitor between its end and ground is called the second resonator. The first resonator has a smaller Q-factor compared to the second resonator. When multiple resonators are all first resonators, the effect of a smaller Q-factor becomes more pronounced as the number of resonators increases. However, there were cases where it was not possible to reduce the number of resonators in order to achieve the desired characteristics.

[0007] Furthermore, in recent years, the use of frequency bands above 10 GHz, particularly the quasi-millimeter wave band of 10-30 GHz and the millimeter wave band of 30-300 GHz, has been progressing. In particular, it has been difficult to miniaturize bandpass filters used in the quasi-millimeter wave and millimeter wave bands while achieving high Q values ​​and appropriate bandwidth.

[0008] This invention has been made in view of the above problems, and its objective is to provide a stacked filter device that can be miniaturized while achieving desired characteristics. [Means for solving the problem]

[0009] The stacked filter device of the present invention comprises a first port, a second port, a plurality of resonators arranged between the first port and the second port in the circuit configuration, and a stacked body for integrating the first port, the second port, and the plurality of resonators, the stacked body including a plurality of stacked dielectric layers. Each of the plurality of resonators has a first end and a second end.

[0010] The multiple resonators include a first resonator, a second resonator, and at least one third resonator positioned between the first and second resonators in the circuit configuration. No capacitive elements are present between the first end of the first resonator, the second resonator, and at least one of the third resonators and ground in the circuit configuration. The first and second resonators are positioned at the same location in the stacking direction of the multiple dielectric layers. The at least one third resonator is positioned at a different location from the first and second resonators in the stacking direction. [Effects of the Invention]

[0011] In the stacked filter device of the present invention, a resonator is provided in which no capacitor element exists between the first end and the ground. Furthermore, at least one third resonator is positioned differently from the first and second resonators in the stacking direction. As a result, according to the present invention, it is possible to realize a stacked filter device that can be miniaturized while achieving desired characteristics. [Brief explanation of the drawing]

[0012] [Figure 1] This is a circuit diagram showing the circuit configuration of a stacked filter device according to one embodiment of the present invention. [Figure 2] This is a perspective view showing the external appearance of a stacked filter device according to one embodiment of the present invention. [Figure 3] This is an explanatory diagram showing the pattern formation surface of the first to third dielectric layers in a laminate of a stacked filter device according to one embodiment of the present invention. [Figure 4] This is an explanatory diagram showing the pattern formation surface of the fourth to sixth dielectric layers in a laminate of a stacked filter device according to one embodiment of the present invention. [Figure 5] This is an explanatory diagram showing the pattern formation surface of the 7th to 10th dielectric layers in a laminate of a stacked filter device according to one embodiment of the present invention. [Figure 6]It is an explanatory diagram showing the pattern formation surface of the 11th to 13th dielectric layers in the laminate of the laminated filter device according to an embodiment of the present invention. [Figure 7] It is an explanatory diagram showing the pattern formation surface of the 14th to 17th dielectric layers in the laminate of the laminated filter device according to an embodiment of the present invention. [Figure 8] It is an explanatory diagram showing the pattern formation surface of the 18th to 23rd dielectric layers in the laminate of the laminated filter device according to an embodiment of the present invention. [Figure 9] It is an explanatory diagram showing the pattern formation surface of the 24th and 25th dielectric layers in the laminate of the laminated filter device according to an embodiment of the present invention. [Figure 10] It is a perspective view showing the inside of the laminate of the laminated filter device according to an embodiment of the present invention. [Figure 11] It is a perspective view showing a part of the inside of the laminate of the laminated filter device according to an embodiment of the present invention. [Figure 12] It is a perspective view showing a part of the inside of the laminate of the laminated filter device according to an embodiment of the present invention. [Figure 13] It is a plan view showing a part of the inside of the laminate of the laminated filter device according to an embodiment of the present invention. [Figure 14] It is a characteristic diagram showing the pass attenuation characteristics of the first model. [Figure 15] It is a characteristic diagram showing the pass attenuation characteristics of the second model.

Embodiments for Carrying Out the Invention

[0013] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, referring to FIG. 1, the configuration of a laminated filter device (hereinafter simply referred to as a filter device) 1 according to an embodiment of the present invention will be described. FIG. 1 is a circuit diagram showing the circuit configuration of the filter device 1. The filter device 1 is configured to function as a band-pass filter that selectively passes signals having frequencies within a predetermined pass band.

[0014] The filter device 1 includes a first port 2, a second port 3, and a plurality of resonators. The first port 2 and the second port 3 each function as an input / output port of a band-pass filter. The plurality of resonators are arranged between the first port 2 and the second port 3 in terms of circuit configuration. In this application, the expression "in terms of circuit configuration" is used to refer to the arrangement on the circuit diagram rather than the physical arrangement.

[0015] Each of the plurality of resonators is a distributed constant line. Each of the plurality of resonators has a first end and a second end located at both ends in the longitudinal direction of the line. Each of the plurality of resonators may be a 1 / 4 wavelength resonator with one of the first end and the second end short-circuited and the other open, or a 1 / 2 wavelength resonator with both the first end and the second end open.

[0016] In particular, in this embodiment, the plurality of resonators include six resonators 11, 12, 13, 14, 15, and 16. The six resonators 11, 12, 13, 14, 15, and 16 are arranged in this order from the first port 2 side in terms of circuit configuration. The resonators 11 to 16 are configured such that the resonators 11 and 12 are adjacent to each other in terms of circuit configuration and are electromagnetically coupled, the resonators 12 and 13 are adjacent to each other in terms of circuit configuration and are electromagnetically coupled, the resonators 13 and 14 are adjacent to each other in terms of circuit configuration and are electromagnetically coupled, the resonators 14 and 15 are adjacent to each other in terms of circuit configuration and are electromagnetically coupled, and the resonators 15 and 16 are adjacent to each other in terms of circuit configuration and are electromagnetically coupled.

[0017] The resonators 13 and 14 are arranged between the resonator 12 and the resonator 15 in terms of circuit configuration. The resonators 13 and 14 correspond to the "third resonator" in the present invention. The resonators 12 and 15 correspond to the "first resonator" and the "second resonator" in the present invention, respectively.

[0018] The resonator 11 is arranged between the first port 2 and the resonator 12 in terms of circuit configuration. The resonator 16 is arranged between the second port 3 and the resonator 15 in terms of circuit configuration. The resonators 11 and 16 correspond to the "fourth resonator" and the "fifth resonator" in the present invention, respectively.

[0019] In this embodiment, each of the resonators 11 to 16 is a quarter-wavelength resonator. The second end of each of the resonators 11 to 16 is connected to ground.

[0020] The filter device 1 further includes capacitors C1, C2, C3, C4, C5, C6, C7, and C8. Capacitors C1 to C8 are all capacitor elements. Note that a capacitor element is a capacitor that is intentionally provided, not a stray capacitance. One end of capacitor C1 is connected to the first port 2. One end of capacitor C2 is connected to the other end of capacitor C1. One end of capacitor C3 is connected to the other end of capacitor C2. One end of capacitor C4 is connected to the other end of capacitor C3. One end of capacitor C5 is connected to the other end of capacitor C4. The other end of capacitor C5 is connected to the second port 3.

[0021] Resonator 11 and resonator 12 are capacitively coupled via capacitor C1. Resonator 12 and resonator 13 are capacitively coupled via capacitor C2. Resonator 13 and resonator 14 are capacitively coupled via capacitor C3. Resonator 14 and resonator 15 are capacitively coupled via capacitor C4. Resonator 15 and resonator 16 are capacitively coupled via capacitor C6.

[0022] One end of capacitor C6 is connected to the connection point between capacitors C1 and C2. The other end of capacitor C6 is connected to the connection point between capacitors C4 and C5. Resonators 12 and 14 are capacitively coupled via capacitor C6.

[0023] Capacitor C7 is positioned between the first end of resonator 11 and ground in the circuit configuration. Capacitor C8 is positioned between the first end of resonator 16 and ground in the circuit configuration. In other words, in the circuit configuration, a capacitor element exists between the first end of each of the resonators 11 and 16 and ground.

[0024] In the circuit configuration, there is no capacitor element between the first end of at least one of the resonators 12 to 15 and ground. In this embodiment in particular, in all of the resonators 12 to 15, there is no capacitor element between the first end and ground in the circuit configuration.

[0025] The filter device 1 further includes inductors L1, L2, and L3. Inductor L1 connects the second ends of each of the resonators 11 and 12 to ground. Inductor L2 connects the second ends of each of the resonators 13 and 14 to ground. Inductor L3 connects the second ends of each of the resonators 15 and 16 to ground.

[0026] In this application, the phrase "connected to ground" includes cases where the device is electrically connected to ground via a metal conductor (including an inductor), but does not include cases where the device is connected to ground via a capacitor element.

[0027] Next, with reference to Figure 2, other components of the filter device 1 will be described. Figure 2 is a perspective view showing the external appearance of the filter device 1.

[0028] The filter device 1 further includes a laminate 50. The laminate 50 includes a plurality of stacked dielectric layers, a plurality of conductor layers formed on these dielectric layers, and a plurality of through-holes. The first port 2, the second port 3, resonators 11-16, capacitors C1-C8, and inductors L1-L3 are integrated into the laminate 50. The resonators 11-16 are constructed using a plurality of conductor layers.

[0029] The laminate 50 has a first surface 50A and a second surface 50B located at both ends of the stacking direction T of the multiple dielectric layers, and four side surfaces 50C to 50F connecting the first surface 50A and the second surface 50B. Side surfaces 50C and 50D face opposite each other, and side surfaces 50E and 50F also face opposite each other. Side surfaces 50C to 50F are perpendicular to the first surface 50A and the second surface 50B.

[0030] Here, as shown in Figure 2, we define the X, Y, and Z directions. The X, Y, and Z directions are orthogonal to each other. In this embodiment, the direction parallel to the stacking direction T is defined as the Z direction. The direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. In this application, the expression "when viewed from the stacking direction T" means viewing the object from a position away in the Z direction or -Z direction.

[0031] As shown in Figure 2, the first surface 50A is located at the -Z edge of the laminate 50. The first surface 50A is also the bottom surface of the laminate 50. The second surface 50B is located at the Z edge of the laminate 50. The second surface 50B is also the top surface of the laminate 50. The side surface 50C is located at the -X edge of the laminate 50. The side surface 50D is located at the X edge of the laminate 50. The side surface 50E is located at the -Y edge of the laminate 50. The side surface 50F is located at the Y edge of the laminate 50.

[0032] The filter device 1 further includes terminals 111, 112, 113, and 114. Terminal 111 is located from the first surface 50A through the side 50C to the second surface 50B. Terminal 112 is located from the first surface 50A through the side 50D to the second surface 50B. Terminal 113 is located from the first surface 50A through the side 50E to the second surface 50B. Terminal 114 is located from the first surface 50A through the side 50F to the second surface 50B.

[0033] Terminal 111 corresponds to the first port 2, and terminal 112 corresponds to the second port 3. Terminals 113 and 114 are connected to ground.

[0034] Next, with reference to Figures 3(a) to 9(b), an example of multiple dielectric layers and multiple conductive layers constituting the laminate 50 will be described. In this example, the laminate 50 has 25 stacked dielectric layers. Hereinafter, these 25 dielectric layers will be referred to as the 1st to 25th dielectric layers, from bottom to top. The 1st to 25th dielectric layers will also be denoted by reference numerals 51 to 75.

[0035] Figure 3(a) shows the pattern formation surface of the first dielectric layer 51. Conductor layers 511, 512, 513, and 514, which constitute part of terminals 111, 112, 113, and 114, are formed on the pattern formation surface of the dielectric layer 51. Figure 3(b) shows the pattern formation surface of the second dielectric layer 52. Conductor layers and through-holes are not formed on the dielectric layer 52.

[0036] Figure 3(c) shows the pattern formation surface of the third dielectric layer 53. A ground conductor layer 531 is formed on the pattern formation surface of the dielectric layer 53. Through holes 53T1, 53T2, 53T3, 53T4, 53T5, and 53T6 are formed in the dielectric layer 53, each connected to the conductor layer 531.

[0037] Figure 4(a) shows the pattern formation surface of the fourth dielectric layer 54. Conductor layers 541, 542, 543, 544, 545, and 546 are formed on the pattern formation surface of the dielectric layer 54. Each of the conductor layers 541 to 543 is connected to the terminal 113 shown in Figure 2. Each of the conductor layers 544 to 546 is connected to the terminal 114 shown in Figure 2. The through holes 53T1, 53T2, 53T3, 53T4, 53T5, and 53T6 formed in the dielectric layer 53 are connected to the conductor layers 541, 542, 543, 543, 544, 545, and 546, respectively.

[0038] Figure 4(b) shows the pattern formation surface of the fifth dielectric layer 55. Conductor layers and through-holes are not formed in the dielectric layer 55.

[0039] Figure 4(c) shows the pattern formation surface of the sixth dielectric layer 56. Conductor layers 561 and 562 are formed on the pattern formation surface of the dielectric layer 56. Each of the conductor layers 561 and 562 is connected to the terminal 113 shown in Figure 2. Through holes 56T1 and 56T2 are also formed in the dielectric layer 56, which are connected to the conductor layers 561 and 562, respectively.

[0040] Figure 5(a) shows the pattern formation surfaces of the seventh and eighth dielectric layers 57 and 58, respectively. Through-holes 57T1 and 57T2 are formed in dielectric layers 57 and 58, respectively. Through-holes 56T1 and 56T2 formed in dielectric layer 56 are connected to through-holes 57T1 and 57T2 formed in dielectric layer 57, respectively. In addition, in dielectric layers 57 and 58, through-holes of the same sign that are adjacent vertically are connected to each other.

[0041] Figure 5(b) shows the pattern formation surface of the ninth dielectric layer 59. Conductor layers 591, 592, and 593 are formed on the pattern formation surface of the dielectric layer 59. Conductor layers 592 and 593 are connected to terminals 114 shown in Figure 2. Through holes 59T1, 59T2, 59T3, and 59T4 are also formed in the dielectric layer 59. Through holes 57T1 and 57T2 formed in the dielectric layer 58 are connected to through holes 59T1 and 59T2, respectively. Through holes 59T3 and 59T4 are connected to conductor layers 592 and 593, respectively.

[0042] Figure 5(c) shows the pattern formation surface of the 10th dielectric layer 60. Conductor layers 601, 602, 603, 604, 605, 606, and 607 are formed on the pattern formation surface of the dielectric layer 60. Conductor layer 605 is connected to terminal 114 shown in Figure 2. Conductor layers 606 and 607 are each connected to terminal 113 shown in Figure 2. Through holes 59T3 and 59T4 formed in the dielectric layer 59 are connected to conductor layers 603 and 604, respectively.

[0043] Furthermore, through-holes 60T1, 60T2, 60T3, 60T4, and 60T5 are formed in the dielectric layer 60. Through-holes 59T1 and 59T2 formed in the dielectric layer 59 are connected to through-holes 60T1 and 60T2, respectively. Through-holes 60T3, 60T4, and 60T5 are connected to conductor layers 605, 606, and 607, respectively.

[0044] Figure 6(a) shows the pattern formation surface of the 11th dielectric layer 61. Conductor layers 611A, 612A, 613A, and 614A for the resonator, and conductor layers 611B, 612B, 613B, 614B, 615, 616, and 617 are formed on the pattern formation surface of the dielectric layer 61. Conductor layers 611A, 612A, 613A, and 614A each have a shape that is elongated in one direction. Conductor layer 611A has a first end E1a and a second end E1b located at both ends in the longitudinal direction. Conductor layer 612A has a first end E2a and a second end E2b located at both ends in the longitudinal direction. Conductor layer 613A has a first end E5a and a second end E5b located at both ends in the longitudinal direction. The conductor layer 614A has a first end E6a and a second end E6b located at both ends in the longitudinal direction.

[0045] Conductor layer 611B is connected to the second end E1b of conductor layer 611A. Conductor layer 612B is connected to the second end E2b of conductor layer 612A. Conductor layer 613B is connected to the second end E5b of conductor layer 613A. Conductor layer 614B is connected to the second end E6b of conductor layer 614A. Conductor layer 615 is connected to conductor layer 611A at a position between the first end E1a and the second end E1b. Conductor layer 616 is connected to conductor layer 614A at a position between the first end E6a and the second end E6b. In Figure 6(a), the boundary between the two conductor layers is shown by a dotted line.

[0046] The through-holes 60T1 and 60T2 formed in the dielectric layer 60 are connected to the conductor layers 612B and 613B, respectively. The through-holes 60T4 and 60T5 formed in the dielectric layer 60 are connected to the conductor layers 611B and 614B, respectively.

[0047] Furthermore, through-holes 61T1, 61T2, and 61T3 are formed in the dielectric layer 61. Through-holes 61T1 and 61T2 are connected to the conductor layers 615 and 616, respectively. Through-holes 60T3 and 61T3 formed in the dielectric layer 60 are connected to the conductor layer 617.

[0048] Figure 6(b) shows the pattern formation surface of the 12th dielectric layer 62. Conductor layers 621 and 622 are formed on the pattern formation surface of the dielectric layer 62. Through holes 62T1, 62T2, and 62T3 are also formed in the dielectric layer 62. Through holes 61T1, 61T2, and 61T3 formed in the dielectric layer 61 are connected to through holes 62T1, 62T2, and 62T3, respectively.

[0049] Figure 6(c) shows the pattern formation surface of the 13th dielectric layer 63. Conductor layers 631 and 632 are formed on the pattern formation surface of the dielectric layer 63. Conductor layer 631 is connected to terminal 111 shown in Figure 2. Conductor layer 632 is connected to terminal 112 shown in Figure 2. Through holes 62T1 and 62T2 formed in the dielectric layer 62 are connected to conductor layers 631 and 632, respectively.

[0050] Furthermore, through-holes 63T3 are formed in the dielectric layer 63. Through-holes 62T3 formed in the dielectric layer 62 are connected to through-holes 63T3.

[0051] Figure 7(a) shows the pattern formation surfaces of the 14th and 15th dielectric layers 64 and 65, respectively. Through-holes 64T3 are formed in each of the dielectric layers 64 and 65. The through-holes 63T3 formed in dielectric layer 63 are connected to the through-holes 64T3 formed in dielectric layer 64. The through-holes 64T3 formed in dielectric layer 64 are connected to the through-holes 64T3 formed in dielectric layer 65.

[0052] Figure 7(b) shows the pattern formation surface of the 16th dielectric layer 66. Conductor layers 661 and 662 for the resonator and a conductor layer 663 are formed on the pattern formation surface of the dielectric layer 66. Conductor layers 661 and 662 each have a shape that is elongated in one direction. Conductor layer 661 has a first end E3a and a second end E3b located at both ends in the longitudinal direction. Conductor layer 662 has a first end E4a and a second end E4b located at both ends in the longitudinal direction.

[0053] The conductor layer 663 is connected to the second end E3b of the conductor layer 661 and the second end E4b of the conductor layer 662. In Figure 7(b), the boundaries between the conductor layer 661 and the conductor layer 663, and the boundaries between the conductor layer 662 and the conductor layer 663 are shown by dotted lines. The through-hole 64T3 formed in the dielectric layer 65 is connected to the conductor layer 663.

[0054] Figure 7(c) shows the pattern formation surface of the 17th dielectric layer 67. A conductive layer 671 is formed on the pattern formation surface of the dielectric layer 67.

[0055] Figure 8(a) shows the pattern formation surfaces of the 18th to 21st dielectric layers 68-71. Conductor layers and through-holes are not formed in any of the dielectric layers 68-71.

[0056] Figure 8(b) shows the pattern formation surface of the 22nd dielectric layer 72. Conductor layers 721, 722, 723, 724, 725, and 726 are formed on the pattern formation surface of the dielectric layer 72. Each of the conductor layers 721 to 723 is connected to terminal 113 as shown in Figure 2. Each of the conductor layers 724 to 726 is connected to terminal 114 as shown in Figure 2.

[0057] Furthermore, the dielectric layer 72 has through-holes 72T1, 72T2, 72T3, 72T4, 72T5, and 72T6, which are connected to the conductive layers 721, 722, 723, 724, 725, and 726, respectively.

[0058] Figure 8(c) shows the pattern formation surface of the 23rd dielectric layer 73. A ground conductor layer 731 is formed on the pattern formation surface of the dielectric layer 73. Each of the through holes 72T1 to 72T6 formed in the dielectric layer 72 is connected to the conductor layer 731.

[0059] Figure 9(a) shows the pattern formation surface of the 24th dielectric layer 74. No conductive layers or through-holes are formed in the dielectric layer 74. Figure 9(b) shows the pattern formation surface of the 25th dielectric layer 75. Mark 751 is formed in the dielectric layer 75.

[0060] The laminate 50 shown in Figure 2 is constructed by stacking dielectric layers 51 to 75, with the pattern-forming surface of the first dielectric layer 51 becoming the first surface 50A of the laminate 50, and the surface of the 25th dielectric layer 75 opposite to the pattern-forming surface becoming the second surface 50B of the laminate 50.

[0061] Figure 10 shows the interior of the laminate 50, which is constructed by stacking dielectric layers 51 to 75 from the first to the 25th layer. As shown in Figure 10, multiple conductor layers and multiple through-holes, as shown in Figures 3(a) to 8(c), are stacked inside the laminate 50. Note that mark 751 is omitted in Figure 10.

[0062] The following describes the correspondence between the circuit components of the filter device 1 shown in Figure 1 and the internal components of the laminate 50. The resonator 11 is composed of a conductor layer 611A for the resonator. The conductor layer 611A is connected to terminal 111 via conductor layer 615, through holes 61T1, 62T1, and conductor layer 631.

[0063] The first end E1a and the second end E1b of the conductor layer 611A correspond to the first end and the second end of the resonator 11, respectively. In the following description, the first end and the second end of the resonator 11 will also be represented by the symbols E1a and E1b, respectively. The second end E1b of the resonator 11 (conductor layer 611A) is connected to terminal 113 via conductor layer 606, through hole 60T4, and conductor layer 611B.

[0064] The resonator 12 is composed of a conductor layer 612A for the resonator. The first end E2a and the second end E2b of the conductor layer 612A correspond to the first end and the second end of the resonator 12, respectively. In the following description, the first end and the second end of the resonator 12 will also be represented by the symbols E2a and E2b, respectively. The second end E2b of the resonator 12 (conductor layer 612A) is connected to terminal 113 via conductor layer 561, through holes 56T1, 57T1, 59T1, 60T1 and conductor layer 612B.

[0065] The resonator 13 is composed of a conductor layer 661 for the resonator. The first end E3a and the second end E3b of the conductor layer 661 correspond to the first end and the second end of the resonator 13, respectively. In the following description, the first end and the second end of the resonator 13 will also be represented by the symbols E3a and E3b, respectively.

[0066] The resonator 14 is composed of a conductor layer 662 for the resonator. The first end E4a and the second end E4b of the conductor layer 662 correspond to the first end and the second end of the resonator 14, respectively. In the following description, the first end and the second end of the resonator 14 will also be represented by the symbols E4a and E4b, respectively.

[0067] The second end E3b of resonator 13 (conductor layer 661) and the second end E4b of resonator 14 (conductor layer 662) are connected to conductor layer 663. Conductor layer 663 is connected to terminal 114 via conductor layer 605, through hole 60T3, conductor layer 617, and through holes 61T3, 62T3, 63T3, and 64T3.

[0068] The resonator 15 is composed of a conductor layer 613A for the resonator. The first end E5a and the second end E5b of the conductor layer 613A correspond to the first end and the second end of the resonator 15, respectively. In the following description, the first end and the second end of the resonator 15 will also be represented by the symbols E5a and E5b, respectively. The second end E2b of the resonator 15 (conductor layer 613A) is connected to terminal 113 via conductor layer 562, through holes 56T2, 57T2, 59T2, 60T2 and conductor layer 613B.

[0069] The resonator 16 is composed of a conductor layer 614A for the resonator. The conductor layer 614A is connected to the terminal 112 via a conductor layer 616, through holes 61T2, 62T2, and a conductor layer 632.

[0070] The first end E6a and the second end E6b of the conductor layer 614A correspond to the first end and the second end of the resonator 16, respectively. In the following description, the first end and the second end of the resonator 16 will also be represented by the symbols E6a and E6b, respectively. The second end E6b of the resonator 16 (conductor layer 614A) is connected to terminal 113 via conductor layer 607, through hole 60T5, and conductor layer 614B.

[0071] Capacitor C1 is composed of conductive layers 601, 611A, 612A, 621 and dielectric layers 60, 61 between these conductive layers. Capacitor C2 is composed of conductive layers 612A, 661 and dielectric layers 61 to 65 between these conductive layers. Capacitor C3 is composed of conductive layers 661, 662, 671 and dielectric layer 66 between these conductive layers. Capacitor C4 is composed of conductive layers 613A, 662 and dielectric layers 61 to 65 between these conductive layers. Capacitor C5 is composed of conductive layers 602, 613A, 614A, 622 and dielectric layers 60, 61 between these conductive layers.

[0072] Capacitor C6 is composed of conductive layers 591, 612A, 613A and dielectric layers 59, 60 between these conductive layers. Capacitor C7 is composed of conductive layers 611A, 603 and dielectric layer 60 between these conductive layers. Capacitor C8 is composed of conductive layers 614A, 604 and dielectric layer 60 between these conductive layers.

[0073] The conductor layer 603 constituting capacitor C7 is connected to terminal 114 via conductor layer 592 and through-hole 59T3. The conductor layer 604 constituting capacitor C8 is connected to terminal 114 via conductor layer 593 and through-hole 59T4.

[0074] Inductor L1 is composed of conductor layers 561, 606, 611B, 612B, through-holes 56T1, 57T1, 59T1, 60T1, 60T4, and terminal 113. Inductor L2 is composed of conductor layers 605, 617, 663, through-holes 60T3, 61T3, 62T3, 63T3, 64T3, and terminal 114. Inductor L3 is composed of conductor layers 562, 607, 613B, 614B, through-holes 56T2, 57T2, 59T2, 60T2, 60T5, and terminal 113.

[0075] Next, the structural features of the filter device 1 according to this embodiment will be described with reference to Figures 2 to 13. Figures 11 and 12 are perspective views showing a part of the interior of the laminate 50. Figure 11 mainly shows a plurality of conductive layers and a plurality of through holes formed in the first to eleventh dielectric layers 51 to 61. Figure 12 mainly shows a plurality of conductive layers and a plurality of through holes formed in the first to sixteenth dielectric layers 51 to 66. Figure 13 is a plan view showing a part of the interior of the laminate 50.

[0076] First, the characteristics related to resonators 12-15 will be described. In the circuit configuration, there are no capacitor elements between the first end of each of two specific resonators among resonators 12-15 and ground. The two specific resonators are located at the same position in the stacking direction T. In this embodiment, the set of resonators 12,15 and the set of resonators 13,14 each correspond to two specific resonators. That is, as shown in Figures 6(a), 10, and 11, the resonators 12,15 (conductor layers 612A, 613A) are located at the same position in the stacking direction T. Resonator 12 is located closer to side 50C than to side 50D. Resonator 15 is located closer to side 50D than to side 50C.

[0077] Furthermore, as shown in Figures 7(b), 10, and 12, the resonators 13 and 14 (conductor layers 661 and 662) are located at the same position in the stacking direction T. Resonator 13 is located closer to side surface 50C than to side surface 50D. Resonator 14 is located closer to side surface 50D than to side surface 50C.

[0078] Furthermore, resonators 13 and 14 are positioned differently from resonators 12 and 15 in the stacking direction T. In this embodiment in particular, resonators 13 and 14 are positioned between resonators 12 and 15 and the second surface 50B of the laminate 50. Also, as shown in Figure 13, a portion of resonator 13 overlaps with a portion of resonator 12 when viewed from the stacking direction T. A portion of resonator 14 overlaps with a portion of resonator 15 when viewed from the stacking direction T.

[0079] Furthermore, as shown in Figure 13, the first end E2a of resonator 12 and the first end E5a of resonator 15 are each positioned closer to side surface 50F than to side surface 50E. The second end E2b of resonator 12 and the second end E5b of resonator 15 are each positioned closer to side surface 50E than to side surface 50F.

[0080] The first end E3a of resonator 13 and the first end E4a of resonator 14 are each positioned closer to side surface 50E than to side surface 50F. The second end E3b of resonator 13 and the second end E4b of resonator 14 are each positioned closer to side surface 50F than to side surface 50E. In other words, in this embodiment, resonators 13 and 14 are arranged such that the positions of the first end and the second end are aligned when viewed from the stacking direction T. When resonators 13 and 14 are arranged so that the positions of the first end and the second end are aligned, the coupling between resonator 13 and resonator 14 is stronger than when resonators 13 and 14 are arranged so that the positions of the first end and the second end are reversed.

[0081] The second end E2b of resonator 12 is positioned closer to the first end E3a of resonator 13 than the second end E3b of resonator 13. In other words, in this embodiment, resonators 12 and 13 are positioned such that the positions of the first and second ends are reversed when viewed from the stacking direction T. Similarly, the second end E5b of resonator 15 is positioned closer to the first end E4a of resonator 14 than the second end E4b of resonator 14. In other words, in this embodiment, resonators 14 and 15 are positioned such that the positions of the first and second ends are reversed when viewed from the stacking direction T.

[0082] Here, when viewing the resonator from the stacking direction T, the dimension of the resonator in the short-side direction is called the width. As shown in Figures 6(a) and 13, the width of the first end E2a of the resonator 12 and the width of the second end E2b of the resonator 12 are different from each other. In this embodiment in particular, the width of the second end E2b of the resonator 12 is smaller than the width of the first end E2a of the resonator 12.

[0083] The resonator 12 may include a first portion including a first end E2a and a second portion including a second end E2b. The width of the first portion may be constant or approximately constant regardless of its position in the longitudinal direction of the resonator 12. The width of the second portion may decrease as it moves away from the first portion.

[0084] Furthermore, the width of the first end E5a of the resonator 15 and the width of the second end E5b of the resonator 15 are different from each other. In this embodiment in particular, the width of the second end E5b of the resonator 15 is smaller than the width of the first end E5a of the resonator 15.

[0085] The resonator 15 may include a third portion including a first end E2a and a fourth portion including a second end E2b. The width of the third portion may be constant or approximately constant regardless of its position in the longitudinal direction of the resonator 15. The width of the fourth portion may decrease as it moves away from the third portion.

[0086] The width of the first end E3a of the resonator 13 and the width of the second end E3b of the resonator 13 may be equal to or approximately equal to each other. Also, the width of the resonator 13 may be constant or approximately constant regardless of its position in the longitudinal direction of the resonator 15.

[0087] The width of the first end E4a of the resonator 14 and the width of the second end E4b of the resonator 14 may be equal to or approximately equal to each other. Furthermore, the width of the resonator 14 may be constant or approximately constant regardless of its position in the longitudinal direction.

[0088] Next, we will describe the characteristics related to resonators 11 and 16. As shown in Figures 6(a), 10, and 11, the resonators 11 and 16 (conductor layers 611A and 614A) are located at the same position in the stacking direction T. Resonator 11 is located closer to side surface 50C than to side surface 50D. Resonator 16 is located closer to side surface 50D than to side surface 50C.

[0089] In this embodiment, in particular, the resonators 11, 12, 15, and 16 are arranged at the same position in the stacking direction T. Resonator 11 is located between the side surface 50C and resonator 12. Resonator 16 is located between the side surface 50D and resonator 15.

[0090] As shown in Figure 13, the first end E1a of resonator 11 and the first end E6a of resonator 16 are located closer to side 50F than to side 50E, respectively. The second end E1b of resonator 11 and the second end E6b of resonator 16 are located closer to side 50E than to side 50F.

[0091] Furthermore, the first end E1a of resonator 11 is positioned closer to the first end E2a of resonator 12 than the second end E2b of resonator 12. In other words, in this embodiment, resonators 11 and 12 are positioned so that the positions of the first and second ends are aligned when viewed from the stacking direction T. Similarly, the first end E6a of resonator 16 is positioned closer to the first end E5a of resonator 15 than the second end E5b of resonator 15. In other words, in this embodiment, resonators 15 and 16 are positioned so that the positions of the first and second ends are aligned when viewed from the stacking direction T.

[0092] The width of the first end E1a of the resonator 11 and the width of the second end E1b of the resonator 11 may be equal to or approximately equal to each other. Furthermore, the width of the resonator 11 may be constant or approximately constant regardless of its position in the longitudinal direction.

[0093] The width of the first end E6a of the resonator 16 and the width of the second end E6b of the resonator 16 may be equal to or approximately equal to each other. Furthermore, the width of the resonator 16 may be constant or approximately constant regardless of its position in the longitudinal direction.

[0094] Next, the operation and effects of the filter device 1 according to this embodiment will be described. In this embodiment, the first end E3a of the resonator 13 is not connected to ground, and there is no capacitor element between the first end E3a of the resonator 13 and ground in terms of the circuit configuration. Also, the first end E4a of the resonator 14 is not connected to ground, and there is no capacitor element between the first end E4a of the resonator 14 and ground in terms of the circuit configuration. As a result, according to this embodiment, the Q values ​​of each of the resonators 13 and 14 can be increased compared to the case where there is a capacitor element between the first end E3a of the resonator 13 and ground, and a capacitor element between the first end E4a of the resonator 14 and ground.

[0095] The explanation of the Q values ​​of resonators 13 and 14 also applies to resonators 12 and 15. In other words, according to this embodiment, the Q values ​​of resonators 12 and 13 can be increased compared to the case where a capacitor element is present between the first end E2a of resonator 12 and ground, and a capacitor element is present between the first end E5a of resonator 15 and ground.

[0096] Furthermore, in this embodiment, resonators 13 and 14 are positioned differently from resonators 12 and 15 in the stacking direction T. As a result, according to this embodiment, the dimensions of the laminate 50 in the direction parallel to the X direction can be reduced. In particular, in this embodiment, resonator 13 overlaps with a part of resonator 12 when viewed from the stacking direction T, and resonator 14 overlaps with a part of resonator 15 when viewed from the stacking direction T. Thus, according to this embodiment, the dimensions of the laminate 50 in the direction parallel to the X direction can be reduced even further compared to the case where resonators 12 and 13 do not overlap and resonators 14 and 15 do not overlap.

[0097] Furthermore, by arranging resonators 13 and 14 at different positions from resonators 12 and 15 in the stacking direction T, it becomes possible to adjust the coupling between resonators 12 and 13 by adjusting the distance between them, without increasing the dimensions of the stack 50 in the direction parallel to the X direction, and also to adjust the coupling between resonators 14 and 15 by adjusting the distance between them. In this embodiment in particular, the coupling between resonators 12 and 13 can be weakened by increasing the distance between them. The above description of resonators 12 and 13 also applies to resonators 14 and 15.

[0098] Based on the above, according to this embodiment, the filter device 1 can be miniaturized while achieving the desired characteristics.

[0099] Furthermore, in this embodiment, there are no capacitor elements between the first ends of each of the resonators 12 to 15 and ground due to the circuit configuration, but there are capacitor elements between the first ends of each of the resonators 11 and 16 and ground due to the circuit configuration. In other words, in this embodiment, the number of resonators without a capacitor element between the first end and ground is greater than the number of resonators with a capacitor element between the first end and ground. As a result, according to this embodiment, the insertion loss of the passband of the filter device 1 can be reduced.

[0100] Next, we will explain the simulation results showing that the characteristics can be adjusted by changing the positions of the resonators 13 and 14. First, we will explain the first and second models used in the simulation. The first and second models are models of the filter device 1 according to this embodiment. In the first model, the resonators 13 and 14 are positioned 180 μm ahead of the resonators 12 and 15 in the Z direction. In the second model, the resonators 13 and 14 are positioned 80 μm ahead of the resonators 12 and 15 in the Z direction.

[0101] Here, the dimension of the laminate 50 in the direction parallel to the X direction is called the first dimension, and the dimension of the laminate 50 in the direction parallel to the Y direction is called the second dimension. The first and second dimensions in the second model are the same as the first and second dimensions in the first model, respectively.

[0102] Figure 14 is a characteristic diagram showing the pass-through attenuation characteristics of the first model. Figure 15 is a characteristic diagram showing the pass-through attenuation characteristics of the second model. In Figures 14 and 15, the horizontal axis represents frequency, and the vertical axis represents attenuation. As shown in Figures 14 and 15, it can be seen that the passband is narrower in the first model compared to the second model. Also, it can be seen that the absolute value of the attenuation in the passband close to the high-frequency cutoff frequency is smaller in the first model compared to the second model. Thus, according to this embodiment, the characteristics can be adjusted without changing the first and second dimensions.

[0103] It should be noted that the present invention is not limited to the embodiments described above, and various modifications are possible. For example, the number and configuration of resonators are not limited to those shown in each embodiment, but are acceptable as long as they satisfy the scope of the claims. In the circuit configuration, the number of third resonators located between resonator 12 and resonator 14 may be one or three or more. If there is one third resonator, the third resonator may overlap both resonators 12 and 14 when viewed from the stacking direction T. Also, resonators 11 and 16 are not essential components of the filter device 1 and may not be provided.

[0104] As described above, the stacked filter device of the present invention comprises a first port, a second port, a plurality of resonators arranged between the first port and the second port in the circuit configuration, and a stacked body for integrating the first port, the second port, and the plurality of resonators, the stacked body including a plurality of stacked dielectric layers. Each of the plurality of resonators has a first end and a second end.

[0105] The multiple resonators include a first resonator, a second resonator, and at least one third resonator positioned between the first and second resonators in the circuit configuration. No capacitive elements are present between the first end of the first resonator, the second resonator, and at least one of the third resonators and ground in the circuit configuration. The first and second resonators are positioned at the same location in the stacking direction of the multiple dielectric layers. The at least one third resonator is positioned at a different location from the first and second resonators in the stacking direction.

[0106] In the stacked filter device of the present invention, the second end of each of the first resonator, the second resonator, and at least one third resonator may be connected to ground. The second end of each of the first resonator and the second resonator may be positioned closer to the first end of each of the at least one third resonator than to the second end of each of the at least one third resonator.

[0107] Furthermore, in the stacked filter device of the present invention, a capacitor element may not be present between the first end of each of two specific resonators (one of the first resonator, the second resonator, and at least one third resonator) and ground in terms of circuit configuration. The two specific resonators may be positioned at the same location in the stacking direction of the multiple dielectric layers.

[0108] Furthermore, in the stacked filter device of the present invention, at least one third resonator may include two third resonators. At least a portion of one of the two third resonators may overlap with a portion of the first resonator when viewed from the stacking direction. At least a portion of the other of the two third resonators may overlap with a portion of the second resonator when viewed from the stacking direction. The first end of one of the two third resonators may be positioned closer to the first end of the other third resonator than the second end of the other third resonator.

[0109] Furthermore, in the stacked filter device of the present invention, the width of the first end of the first resonator and the width of the second end of the first resonator may be different from each other. The width of the first end of the second resonator and the width of the second end of the second resonator may also be different from each other.

[0110] Furthermore, the stacked filter device of the present invention may further include two through-holes connected to the vicinity of the second end of the first resonator and the vicinity of the second end of the second resonator, respectively. The width of the second end of the first resonator may be smaller than that of the first end of the first resonator. The width of the second end of the second resonator may be smaller than that of the first end of the second resonator.

[0111] Furthermore, in the stacked filter device of the present invention, the first resonator may be positioned between the first port and at least one third resonator in the circuit configuration. The second resonator may be positioned between the second port and at least one third resonator in the circuit configuration. The plurality of resonators may further include a fourth resonator positioned between the first port and the first resonator in the circuit configuration, and a fifth resonator positioned between the second port and the second resonator in the circuit configuration. The fourth and fifth resonators may be positioned at the same location in the stacking direction. A capacitor element may not be present between the first end of each of the first and second resonators and ground in the circuit configuration. A capacitor element may be present between the first end of each of the fourth and fifth resonators and ground in the circuit configuration.

[0112] If the multiple resonators include a fourth and a fifth resonator, the multiple resonators may include multiple first-type resonators and multiple second-type resonators. A capacitor element may not be present between the first end of each of the multiple first-type resonators and ground in the circuit configuration. A capacitor element may be present between the first end of each of the multiple second-type resonators and ground in the circuit configuration. The number of multiple first-type resonators may be greater than the number of multiple second-type resonators. [Explanation of Symbols]

[0113] 1...Filter device, 2...First port, 3...Second port, 11~16...Resonator, 50...Laminate, 50A...First surface, 50B...Second surface, 50C~50F...Side, 111~114...Terminals, C1~C8...Capacitors, L1~L3...Inductors.

Claims

1. The first port and The second port and In terms of circuit configuration, a plurality of resonators are arranged between the first port and the second port, A laminate for integrating the first port, the second port, and the plurality of resonators, comprising a laminate including a plurality of stacked dielectric layers, Each of the plurality of resonators has a first end and a second end, The plurality of resonators include a first resonator, a second resonator, and at least one third resonator positioned between the first resonator and the second resonator in the circuit configuration. The first end of the first resonator, the second resonator, and at least one of the at least one third resonator is not connected to ground. Between the first end of the at least one resonator and the ground, there are no capacitor elements directly connected to the first end and the ground in terms of the circuit configuration. The first resonator and the second resonator are arranged at the same position in the stacking direction of the plurality of dielectric layers. A stacked filter device characterized in that the at least one third resonator is positioned differently from the first resonator and the second resonator in the stacking direction.

2. The second end of each of the first resonator, the second resonator, and the at least one third resonator is connected to the ground. The stacked filter apparatus according to claim 1, characterized in that the second end of each of the first resonator and the second resonator is positioned closer to the first end of each of the at least one third resonator than the second end of each of the at least one third resonator.

3. The first end of each of the first resonator, the second resonator, and two specific resonators among the at least one third resonator is not connected to the ground. Between the first end of each of the two specific resonators and the ground, there are no capacitor elements directly connected to the first end and the ground in terms of the circuit configuration. The stacked filter apparatus according to claim 1, characterized in that the two specific resonators are arranged at the same position in the stacking direction.

4. The stacked filter apparatus according to claim 1, characterized in that the at least one third resonator includes two third resonators.

5. At least a portion of one of the two third resonators overlaps with a portion of the first resonator when viewed from the stacking direction. The stacked filter apparatus according to claim 4, characterized in that at least a portion of the other of the two third resonators overlaps with a portion of the second resonator when viewed from the stacking direction.

6. The stacked filter apparatus according to claim 4, characterized in that the first end of one of the two third resonators is positioned closer to the first end of the other of the two third resonators than the second end of the other of the two third resonators.

7. The width of the first end of the first resonator and the width of the second end of the first resonator are different from each other. The stacked filter apparatus according to claim 1, characterized in that the width of the first end of the second resonator and the width of the second end of the second resonator are different from each other.

8. Furthermore, it is provided with two through-holes connected to the vicinity of the second end of the first resonator and the vicinity of the second end of the second resonator, The width of the second end of the first resonator is smaller than the width of the first end of the first resonator. The stacked filter apparatus according to claim 7, characterized in that the width of the second end of the second resonator is smaller than the width of the first end of the second resonator.

9. The first resonator is positioned in the circuit configuration between the first port and the at least one third resonator. The second resonator is positioned in the circuit configuration between the second port and the at least one third resonator. The stacked filter apparatus according to claim 1, characterized in that the plurality of resonators further include a fourth resonator disposed between the first port and the first resonator in the circuit configuration, and a fifth resonator disposed between the second port and the second resonator in the circuit configuration.

10. The stacked filter apparatus according to claim 9, characterized in that the fourth resonator and the fifth resonator are arranged at the same position in the stacking direction.

11. The first end of each of the first resonator, the second resonator, the fourth resonator and the fifth resonator is not connected to the ground, In the circuit configuration, there are no capacitor elements directly connected between the first end of each of the first and second resonators and the ground. The stacked filter device according to claim 9, characterized in that a capacitor element is present in the circuit configuration between the first end of each of the fourth and fifth resonators and the ground.

12. The plurality of resonators includes a plurality of first type resonators and a plurality of second type resonators, The first end of each of the plurality of first type resonators and the first end of each of the plurality of second type resonators are not connected to the ground. In the circuit configuration, there are no capacitor elements directly connected between the first end of each of the plurality of first types of resonators and the ground, respectively. Between the first end of each of the plurality of second types of resonators and the ground, a capacitor element is present in the circuit configuration. The stacked filter apparatus according to claim 9, characterized in that the number of the plurality of first type resonators is greater than the number of the plurality of second type resonators.

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