Magnetic sensor

Abstract

To provide a magnetic sensor capable of being reduced in size.SOLUTION: A magnetic sensor 1 comprises: a plurality of resistance parts composed of a plurality of MR elements 50; and a plurality of convex surfaces 305c having a structure for causing the plurality of MR element 50 to detect components particular to an object magnetic field. The plurality of MR elements 50 are divided and arranged on first to fourth areas A1-A4 corresponding to the plurality of resistance parts. Each of the first to fourth areas A1-A4 includes a first edge and a second edge positioned on both ends in a first reference direction Rx, and a third edge and a fourth edge positioned on both ends in a second reference direction Ry. An angle formed between each of the plurality of convex surfaces 305c and the first edge or the second edge is larger than an angle formed between each of the plurality of convex surfaces 305c and the third edge or the fourth edge.SELECTED DRAWING: Figure 14

Description

Technical Field

[0001] The present invention relates to a magnetic sensor having a structure for detecting a specific component of a target magnetic field in a magnetoresistive element.

Background Art

[0002] In recent years, magnetic sensors using magnetoresistive elements have been used in various applications. In a system including a magnetic sensor, there are cases where it is desired to detect a magnetic field including a component in a direction perpendicular to the surface of a substrate by a magnetoresistive element provided on the substrate. In this case, a soft magnetic material for converting a magnetic field in a direction perpendicular to the surface of the substrate into a magnetic field in a direction parallel to the surface of the substrate may be provided, or the magnetoresistive element may be disposed on an inclined surface formed on the substrate, whereby a magnetic field including a component in a direction perpendicular to the surface of the substrate can be detected.

[0003] Here, two directions parallel to the surface of the substrate of the magnetic sensor and perpendicular to each other are defined as the X direction and the Y direction. Generally, in a magnetic sensor provided with a plurality of magnetoresistive elements, the plurality of magnetoresistive elements are arranged in a lattice pattern along each of the X direction and the Y direction. The longitudinal direction of the magnetoresistive element coincides with the X direction or the Y direction. Further, in a magnetic sensor provided with a plurality of soft magnetic materials, a plurality of magnetoresistive elements are arranged in plural along each of the plurality of soft magnetic materials so as to be aligned. Usually, the longitudinal direction of the magnetoresistive element coincides with the longitudinal direction of the soft magnetic material.

[0004] Patent Document 1 describes a geomagnetic sensor provided with an X-axis magnetic sensor, a Y-axis magnetic sensor, and a Z-axis magnetic sensor on a support. In this geomagnetic sensor, the Z-axis magnetic sensor includes a magnetoresistive element and a soft magnetic material. The soft magnetic material converts a vertical magnetic field component in a direction parallel to the Z axis into a horizontal magnetic field component in a direction perpendicular to the Z axis and applies this horizontal magnetic field component to the magnetoresistive element. The magnetoresistive element and the soft magnetic material each have a shape long in the Y-axis direction.

[0005] Patent Document 2 describes a magnetic field detection unit having a slope extending in the V-axis direction. In this magnetic field detection unit, multiple magnetoresistive effect films are formed on the slope and are divided and arranged in multiple element formation regions. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] International Publication No. 2011 / 068146 [Patent Document 2] Japanese Patent Publication No. 2021-092526 [Overview of the project] [Problems that the invention aims to solve]

[0007] Generally, when there are many structures that have a structure for a magnetoresistive element to detect a specific component of the target magnetic field, such as soft magnetic materials or inclined surfaces, it becomes difficult to accurately form the magnetoresistive elements. Therefore, in magnetic sensors equipped with the above structures, it is necessary to devise ways to reduce the number of structures. However, such devisements have not been sufficiently considered in the past.

[0008] The present invention has been made in view of the above problems, and its object is to provide a magnetic sensor that can be miniaturized, which has a structure that causes a magnetoresistive element to detect a specific component of a target magnetic field. [Means for solving the problem]

[0009] The magnetic sensor of the present invention comprises a plurality of resistive sections composed of a plurality of magnetoresistive elements, and a plurality of structures, each having a structure for causing the plurality of magnetoresistive elements to detect a specific component of the target magnetic field. The plurality of magnetoresistive elements are divided and arranged into a plurality of regions corresponding to the plurality of resistive sections. The plurality of regions are arranged to be aligned along a first reference direction. Each of the plurality of regions has a first edge and a second edge located at both ends in the first reference direction, and a third edge and a fourth edge located at both ends in a second reference direction perpendicular to the first reference direction. Each of the first edge and the second edge extends along the second reference direction. Each of the plurality of structures extends in a direction intersecting each of the first reference direction and the second reference direction. The angle that each of the plurality of structures makes with respect to the first edge or the second edge is greater than the angle that each of the plurality of structures makes with respect to the third edge or the fourth edge. The plurality of structures include a structure that extends across at least two of the plurality of regions. [Effects of the Invention]

[0010] In the magnetic sensor of the present invention, each of the multiple regions has a first edge and a second edge located at both ends in a first reference direction, and a third edge and a fourth edge located at both ends in a second reference direction perpendicular to the first reference direction. The angle that each of the multiple structures makes with respect to the first edge or the second edge is greater than the angle that each of the multiple structures makes with respect to the third edge or the fourth edge. As a result, the present invention has the effect of realizing a magnetic sensor that can be miniaturized. [Brief explanation of the drawing]

[0011] [Figure 1] This is a perspective view showing a magnetic sensor device including a magnetic sensor according to the first embodiment of the present invention. [Figure 2] Figure 1 is a plan view showing the magnetic sensor device. [Figure 3] Figure 1 is a functional block diagram showing the configuration of the magnetic sensor device. [Figure 4] This is a circuit diagram showing the circuit configuration of the first detection circuit in the first embodiment of the present invention. [Figure 5] This is a circuit diagram showing the circuit configuration of the second detection circuit in the first embodiment of the present invention. [Figure 6] This is a circuit diagram showing the circuit configuration of the third detection circuit in the first embodiment of the present invention. [Figure 7] This is a plan view showing a part of the first chip in the first embodiment of the present invention. [Figure 8] This is a cross-sectional view showing a part of the first chip in the first embodiment of the present invention. [Figure 9] This is a plan view showing a part of the second chip in the first embodiment of the present invention. [Figure 10] This is a cross-sectional view showing a part of the second chip in the first embodiment of the present invention. [Figure 11] This is a side view showing the magnetoresistive effect element in the first embodiment of the present invention. [Figure 12] This is a plan view showing the element arrangement region in the first embodiment of the present invention. [Figure 13] This is a plan view showing a plurality of convex surfaces in the first embodiment of the present invention. [Figure 14] This is an explanatory view showing the convex surface, the first edge, and the fourth edge in the first embodiment of the present invention. [Figure 15] This is an explanatory view showing a plurality of magnetoresistive effect elements in a part of the first region in the first embodiment of the present invention. [Figure 16] This is a plan view showing a plurality of convex surfaces in the magnetic sensor of the first comparative example. [Figure 17] This is a plan view showing one convex surface in the magnetic sensor of the second comparative example. [Figure 18] This is a plan view showing a plurality of convex surfaces in the magnetic sensor of the third comparative example. [Figure 19] This is an explanatory view showing a plurality of magnetoresistive effect elements in a part of the first region in the magnetic sensor of the fourth comparative example. [Figure 20] It is a plan view showing an element arrangement region in a first modification of a magnetic sensor according to a first embodiment of the present invention. [Figure 21] It is a plan view showing an element arrangement region in a second modification of a magnetic sensor according to a first embodiment of the present invention. [Figure 22] It is a plan view showing an element arrangement region in a second embodiment of the present invention. [Figure 23] It is a plan view showing one convex surface of a magnetic sensor of a fifth comparative example. [Figure 24] It is a plan view showing an element arrangement region in a third embodiment of the present invention. [Figure 25] It is a plan view showing one convex surface of a magnetic sensor of a sixth comparative example. [Figure 26] It is a plan view showing a plurality of convex surfaces in a fourth embodiment of the present invention. [Figure 27] It is a functional block diagram showing the configuration of a magnetic sensor device including a magnetic sensor according to a fifth embodiment of the present invention. [Figure 28] It is a circuit diagram showing the circuit configuration of a first detection circuit in a fifth embodiment of the present invention. [Figure 29] It is a circuit diagram showing the circuit configuration of a second detection circuit in a fifth embodiment of the present invention. [Figure 30] It is a circuit diagram showing the circuit configuration of a third detection circuit in a fifth embodiment of the present invention. [Figure 31] It is a plan view showing a part of a magnetic sensor according to a fifth embodiment of the present invention. [Figure 32] It is a perspective view showing a plurality of magnetoresistive effect elements and a plurality of yokes in a fifth embodiment of the present invention. [Figure 33] It is a side view showing a plurality of magnetoresistive effect elements and a plurality of yokes in a fifth embodiment of the present invention. [Figure 34] It is a plan view showing a plurality of yokes in a fifth embodiment of the present invention. [Figure 35]This is a functional block diagram showing the configuration of a magnetic sensor device including a magnetic sensor according to the sixth embodiment of the present invention. [Figure 36] This is a circuit diagram showing the circuit configuration of the first detection circuit in the sixth embodiment of the present invention. [Figure 37] This is a circuit diagram showing the circuit configuration of the second detection circuit in the sixth embodiment of the present invention. [Figure 38] This is a plan view showing a part of the first chip in the sixth embodiment of the present invention. [Figure 39] This is a cross-sectional view showing a portion of the first chip in the sixth embodiment of the present invention. [Modes for carrying out the invention]

[0012] [First Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the configuration of a magnetic sensor device including a magnetic sensor according to the first embodiment of the present invention will be described with reference to Figures 1 to 3. Figure 1 is a perspective view showing the magnetic sensor device 100. Figure 2 is a plan view showing the magnetic sensor device 100. Figure 3 is a functional block diagram showing the configuration of the magnetic sensor device 100.

[0013] The magnetic sensor device 100 includes a magnetic sensor 1 according to this embodiment. The magnetic sensor 1 is composed of a first chip 2 and a second chip 3. The magnetic sensor device 100 further includes a support 4 that supports the first and second chips 2 and 3. The first chip 2, the second chip 3, and the support 4 all have a rectangular parallelepiped shape. The support 4 has a reference plane 4a which is the upper surface, a lower surface located on the opposite side of the reference plane 4a, and four sides connecting the reference plane 4a and the lower surface.

[0014] Here, with reference to Figures 1 and 2, the reference coordinate system in this embodiment will be described. The reference coordinate system is a coordinate system based on the magnetic sensor device 100, and is a Cartesian coordinate system defined by three axes. In the reference coordinate system, the X, Y, and Z directions are defined. The X, Y, and Z directions are orthogonal to each other. In this embodiment in particular, the Z direction is the direction perpendicular to the reference plane 4a of the support 4, and the direction from the bottom surface of the support 4 toward the reference plane 4a. The direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes that define the reference coordinate system are the axis parallel to the X direction, the axis parallel to the Y direction, and the axis parallel to the Z direction.

[0015] Furthermore, the direction parallel to the X direction is defined as the first reference direction Rx, and the direction parallel to the Y direction is defined as the second reference direction Ry. The reference plane 4a is a plane parallel to the first reference direction Rx and the second reference direction Ry. In this embodiment, for convenience, the upper surface of the support 4 is used as the reference plane. However, the reference plane of the present invention is not limited to the upper surface of the support 4, as long as it is a plane parallel to the first reference direction Rx and the second reference direction Ry.

[0016] Hereinafter, the position at the end of the Z-direction relative to the reference position will be referred to as "above," and the position opposite to the "above" position relative to the reference position will be referred to as "below." Furthermore, with respect to the components of the magnetic sensor device 100, the surface located at the end in the Z-direction will be referred to as the "top surface," and the surface located at the end in the -Z-direction will be referred to as the "bottom surface." Also, the expression "when viewed from the Z-direction" means viewing the object from a position far away in the Z-direction.

[0017] The first chip 2 has an upper surface 2a and a lower surface located on opposite sides, and four sides connecting the upper surface 2a and the lower surface. The second chip 3 has an upper surface 3a and a lower surface located on opposite sides, and four sides connecting the upper surface 3a and the lower surface.

[0018] The first chip 2 is mounted on the reference plane 4a of the support 4 with its lower surface facing the reference plane 4a of the support 4. The second chip 3 is mounted on the reference plane 4a of the support 4 with its lower surface facing the reference plane 4a of the support 4. The first chip 2 and the second chip 3 are joined to the support 4 by adhesives 6 and 7, respectively.

[0019] The first chip 2 has a plurality of first electrode pads 21 provided on its upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 provided on its upper surface 3a. The support 4 has a plurality of third electrode pads 41 provided on a reference plane 4a. Although not shown, in the magnetic sensor device 100, two corresponding electrode pads from the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads 41 are connected to each other by bonding wires.

[0020] The magnetic sensor 1 comprises a first detection circuit 10, a second detection circuit 20, and a third detection circuit 30. The first chip 2 includes the first detection circuit 10. The second chip 3 includes the second detection circuit 20 and the third detection circuit 30.

[0021] The magnetic sensor device 100 further includes a processor 40. The support 4 contains the processor 40. The first to third detection circuits 10, 20, 30 and the processor 40 are connected via a plurality of first electrode pads 21, a plurality of second electrode pads 31, a plurality of third electrode pads 41 and a plurality of bonding wires.

[0022] Each of the first to third detection circuits 10, 20, and 30 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. In this embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistive elements. Hereinafter, magnetoresistive elements will be referred to as MR elements.

[0023] The processor 40 is configured to generate a first, second, and third detection value, which correspond to the components of the magnetic field at a predetermined reference position in three different directions, by processing a plurality of detection signals generated by the first to third detection circuits 10, 20, and 30. In this embodiment, the three different directions are two directions parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is configured, for example, by an application-specific integrated circuit (ASIC).

[0024] Next, the first to third detection circuits 10, 20, and 30 will be described with reference to Figures 3 to 10. Figure 4 is a circuit diagram showing the circuit configuration of the first detection circuit 10. Figure 5 is a circuit diagram showing the circuit configuration of the second detection circuit 20. Figure 6 is a circuit diagram showing the circuit configuration of the third detection circuit 30. Figure 7 is a plan view showing a part of the first chip 2. Figure 8 is a cross-sectional view showing a part of the first chip 2. Figure 9 is a plan view showing a part of the second chip 3. Figure 10 is a cross-sectional view showing a part of the second chip 3.

[0025] Here, as shown in Figures 7 and 9, the U and V directions are defined as follows: The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, the U direction is specifically defined as the direction of rotation by α from the X direction toward the -Y direction, and the V direction is defined as the direction of rotation by α from the Y direction toward the X direction. Note that α is an angle greater than 0° and less than 90°. In one example, α is 45°. Furthermore, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0026] Furthermore, as shown in Figure 10, the W1 and W2 directions are defined as follows: The W1 direction is the direction of rotation from the V direction toward the -Z direction. The W2 direction is the direction of rotation from the V direction toward the Z direction. In this embodiment, the W1 direction is specifically defined as the direction of rotation by β from the V direction toward the -Z direction, and the W2 direction is defined as the direction of rotation by β from the V direction toward the Z direction. Note that β is an angle greater than 0° and less than 90°. The direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are orthogonal to the U direction, respectively.

[0027] The first detection circuit 10 is configured to detect a component of the target magnetic field parallel to the U direction and generate at least one first detection signal corresponding to this component. The second detection circuit 20 is configured to detect a component of the target magnetic field parallel to the W1 direction and generate at least one second detection signal corresponding to this component. The third detection circuit 30 is configured to detect a component of the target magnetic field parallel to the W2 direction and generate at least one third detection signal corresponding to this component.

[0028] As shown in Figure 4, the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistor R11, a second resistor R12, a third resistor R13, and a fourth resistor R14. The multiple MR elements of the first detection circuit 10 constitute the first to fourth resistors R11, R12, R13, and R14.

[0029] The first resistor R11 is located between the power supply terminal V1 and the signal output terminal E11. The second resistor R12 is located between the signal output terminal E11 and the ground terminal G1. The third resistor R13 is located between the signal output terminal E12 and the ground terminal G1. The fourth resistor R14 is located between the power supply terminal V1 and the signal output terminal E12.

[0030] As shown in Figure 5, the second detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the second detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0031] The first resistor R21 is located between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is located between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is located between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is located between the power supply terminal V2 and the signal output terminal E22.

[0032] As shown in Figure 6, the third detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the third detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0033] The first resistor R31 is located between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is located between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is located between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is located between the power supply terminal V3 and the signal output terminal E32.

[0034] A predetermined voltage or current is applied to each of the power supply terminals V1 to V3. Each of the ground terminals G1 to G3 is connected to ground.

[0035] Hereinafter, the multiple MR elements of the first detection circuit 10 will be referred to as multiple first MR elements 50A, the multiple MR elements of the second detection circuit 20 will be referred to as multiple second MR elements 50B, and the multiple MR elements of the third detection circuit 30 will be referred to as multiple third MR elements 50C. Since the first to third detection circuits 10, 20, and 30 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes multiple first MR elements 50A, multiple second MR elements 50B, and multiple third MR elements 50C. Furthermore, any MR element will be denoted by the reference numeral 50.

[0036] Figure 11 is a side view showing the MR element 50. The MR element 50 may be a spin valve type MR element or an AMR (anisotropic magnetoresistance) element. In this embodiment, the MR element 50 is a spin valve type MR element. The MR element 50 has a magnetization fixed layer 52 having magnetization with a fixed direction, a free layer 54 having magnetization whose direction can change according to the direction of the target magnetic field, and a gap layer 53 disposed between the magnetization fixed layer 52 and the free layer 54. The MR element 50 may be a TMR (tunnel magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle that the magnetization direction of the free layer 54 makes with respect to the magnetization direction of the magnetization fixed layer 52. The resistance value is at its minimum when the angle is 0° and at its maximum when the angle is 180°. In each MR element 50, the free layer 54 has shape anisotropy such that its easy magnetization axis direction is perpendicular to the magnetization direction of the magnetization fixed layer 52. As a means of setting the easy magnetization axis of the free layer 54 in a predetermined direction, a magnet that applies a bias magnetic field to the free layer 54 can also be used.

[0037] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, magnetization fixed layer 52, gap layer 53, and free layer 54 are stacked in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and creates exchange coupling with the magnetization fixed layer 52 to fix the magnetization direction of the magnetization fixed layer 52. The magnetization fixed layer 52 may be a so-called self-pinned fixed layer (Synthetic Ferri Pinned layer, SFP layer). The self-pinned fixed layer has a stacked ferri structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. If the magnetization fixed layer 52 is a self-pinned fixed layer, the antiferromagnetic layer 51 may be omitted.

[0038] Note that the arrangement of layers 51-54 in the MR element 50 may be reversed vertically from the arrangement shown in Figure 11.

[0039] In Figures 4 to 6, the filled-in arrows represent the direction of magnetization of the magnetization fixed layer 52 of the MR element 50. The open-circle arrows represent the direction of magnetization of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0040] In the example shown in Figure 4, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R11 and R13 is in the U direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R12 and R14 is in the -U direction. Furthermore, each free layer 54 of the multiple first MR elements 50A has shape anisotropy such that the easy magnetization axis direction is parallel to the V direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R11 and R12 is in the V direction when no target magnetic field is applied to the first MR element 50A. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R13 and R14 is in the -V direction.

[0041] In the example shown in Figure 5, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R21 and R23 is in the W1 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R22 and R24 is in the -W1 direction. Furthermore, each free layer 54 of the multiple second MR elements 50B has shape anisotropy such that the easy magnetization axis direction is parallel to the U direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R21 and R22 is in the U direction when no target magnetic field is applied to the second MR element 50B. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R23 and R24 is in the -U direction.

[0042] In the example shown in Figure 6, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R31 and R33 is in the W2 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R32 and R34 is in the -W2 direction. Furthermore, each free layer 54 of the multiple third MR elements 50C has shape anisotropy such that the easy magnetization axis direction is parallel to the U direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R31 and R32 is in the U direction when no target magnetic field is applied to the third MR element 50C. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R33 and R34 is in the -U direction.

[0043] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a predetermined direction to the free layer 54 of each of the multiple first MR elements 50A, multiple second MR elements 50B, and multiple third MR elements 50C. In this embodiment, the magnetic field generator includes a first coil 70 that applies a magnetic field in a predetermined direction to each of the free layer 54 of the first MR elements 50A, and a second coil 80 that applies a magnetic field in a predetermined direction to each of the free layer 54 of the multiple second MR elements 50B and multiple third MR elements 50C. The first chip 2 includes the first coil 70. The second chip 3 includes the second coil 80.

[0044] Furthermore, the direction of magnetization of the fixed magnetization layer 52 and the direction of the easy magnetization axis of the free layer 54 may be slightly deviated from the above-mentioned direction from the viewpoint of the accuracy of fabrication of the MR element 50. Also, the magnetization of the fixed magnetization layer 52 may be configured to include a magnetization component whose main component is the direction described above. In this case, the direction of magnetization of the fixed magnetization layer 52 will be the direction described above or approximately the direction described above.

[0045] The specific structures of the first chip 2 and the second chip 3 will be described in detail below. Figure 8 shows a portion of the cross-section at the position indicated by line 8-8 in Figure 7.

[0046] The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, 207, 208, 209, 210, a plurality of lower electrodes 61A, a plurality of upper electrodes 62A, a plurality of lower coil elements 71, and a plurality of upper coil elements 72. The upper surface 201a of the substrate 201 is assumed to be parallel to the XY plane. The Z direction is also a unidirectional direction perpendicular to the upper surface 201a of the substrate 201. Note that a coil element is a part of a coil winding.

[0047] The insulating layer 202 is placed on the substrate 201. The multiple lower coil elements 71 are placed on the insulating layer 202. The insulating layer 203 is placed on the insulating layer 202 around the multiple lower coil elements 71. The insulating layer 204 is placed on the multiple lower coil elements 71 and the insulating layer 203.

[0048] Multiple lower electrodes 61A are arranged on an insulating layer 204. An insulating layer 207 is arranged around the multiple lower electrodes 61A on top of the insulating layer 204. Multiple first MR elements 50A are arranged on top of the multiple lower electrodes 61A. An insulating layer 208 is arranged around the multiple first MR elements 50A on top of the multiple lower electrodes 61A and the insulating layer 207. Multiple upper electrodes 62A are arranged on top of the multiple first MR elements 50A and the insulating layer 208. An insulating layer 209 is arranged around the multiple upper electrodes 62A on top of the insulating layer 208.

[0049] The insulating layer 210 is placed on top of the multiple upper electrodes 62A and the insulating layer 209. The multiple upper coil elements 72 are placed on top of the insulating layer 210. The first chip 2 may further include an insulating layer (not shown) that covers the multiple upper coil elements 72 and the insulating layer 210. In Figure 7, the insulating layer 204, the multiple first MR elements 50A, and the multiple upper coil elements 72 are shown as components of the first chip 2.

[0050] The upper surface 201a of the substrate 201 is parallel to the XY plane, and the upper surfaces of each of the multiple lower electrodes 61A are also parallel to the XY plane. Furthermore, the reference plane 4a is parallel to the XY plane. Therefore, in the above state, it can be said that the multiple first MR elements 50A are arranged on a plane parallel to the reference plane 4a.

[0051] As shown in Figure 7, the multiple first MR elements 50A are arranged so that multiple elements are aligned in both the U and V directions. The multiple first MR elements 50A are connected in series by multiple lower electrodes 61A and multiple upper electrodes 62A.

[0052] Here, with reference to Figure 11, the method of connecting multiple first MR elements 50A will be described in detail. In Figure 11, reference numeral 61 indicates a lower electrode corresponding to any MR element 50, and reference numeral 62 indicates an upper electrode corresponding to any MR element 50. As shown in Figure 11, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 in the longitudinal direction. On the upper surface of the lower electrode 61, MR elements 50 are arranged near both ends in the longitudinal direction. Each upper electrode 62 also has an elongated shape and is arranged on two adjacent lower electrodes 61 in the longitudinal direction to electrically connect two adjacent MR elements 50.

[0053] Although not shown, one MR element 50 located at the end of a row of multiple MR elements 50 arranged in a single line is connected to another MR element 50 located at the end of an adjacent row of multiple MR elements 50 in a direction intersecting the longitudinal direction of the lower electrode 61. These two MR elements 50 are connected to each other by electrodes (not shown). The electrodes (not shown) may be electrodes connecting the lower surfaces of the two MR elements 50 or the upper surfaces of the two MR elements 50.

[0054] If the MR element 50 shown in Figure 11 is the first MR element 50A, then the lower electrode 61 shown in Figure 11 corresponds to the lower electrode 61A, and the upper electrode 62 shown in Figure 11 corresponds to the upper electrode 62A. In this case, the longitudinal direction of the lower electrode 61 is parallel to the V direction.

[0055] Each of the multiple upper coil elements 72 extends in a direction parallel to the Y direction. Furthermore, the multiple upper coil elements 72 are arranged so as to be aligned in the X direction. In this embodiment in particular, when viewed from the Z direction, each of the multiple first MR elements 50A has two upper coil elements 72 overlapping.

[0056] Each of the multiple lower coil elements 71 extends in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 71 are arranged so as to be aligned in the X direction. The shape and arrangement of the multiple lower coil elements 71 may be the same as or different from the shape and arrangement of the multiple upper coil elements 72.

[0057] In the examples shown in Figures 7 and 8, the multiple lower coil elements 71 and the multiple upper coil elements 72 are electrically connected to constitute a first coil 70 that applies a magnetic field parallel to the X direction to each of the free layers 54 of the multiple first MR elements 50A. The first coil 70 may also be configured to apply a magnetic field in the X direction to the free layers 54 of the first and second resistors R11 and R12, and a magnetic field in the -X direction to the free layers 54 of the third and fourth resistors R13 and R14. The first coil 70 may also be controlled by a processor 40.

[0058] Next, the structure of the second tip 3 will be described with reference to Figures 9 and 10. Figure 10 shows a portion of the cross-section at the position indicated by line 10-10 in Figure 9.

[0059] The second chip 3 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 307, 308, 309, 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, a plurality of lower coil elements 81, and a plurality of upper coil elements 82. The upper surface 301a of the substrate 301 is assumed to be parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 301a of the substrate 301.

[0060] The insulating layer 302 is placed on the substrate 301. Multiple lower coil elements 81 are placed on the insulating layer 302. The insulating layer 303 is placed on the insulating layer 302 around the multiple lower coil elements 81. Insulating layers 304 and 305 are laminated in this order on the multiple lower coil elements 81 and insulating layer 303.

[0061] Multiple lower electrodes 61B and multiple lower electrodes 61C are arranged on an insulating layer 305. An insulating layer 307 is arranged on the insulating layer 305 around the multiple lower electrodes 61B and multiple lower electrodes 61C. Multiple second MR elements 50B are arranged on the multiple lower electrodes 61B. Multiple third MR elements 50C are arranged on the multiple lower electrodes 61C. An insulating layer 308 is arranged on the multiple lower electrodes 61B, multiple lower electrodes 61C and insulating layer 307 around the multiple second MR elements 50B and multiple third MR elements 50C. Multiple upper electrodes 62B are arranged on the multiple second MR elements 50B and insulating layer 308. Multiple upper electrodes 62C are arranged on the multiple third MR elements 50C and insulating layer 308. An insulating layer 309 is arranged on the insulating layer 308 around the multiple upper electrodes 62B and multiple upper electrodes 62C.

[0062] The insulating layer 310 is positioned on a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 309. A plurality of upper coil elements 82 are positioned on the insulating layer 310. The second tip 3 may further include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310.

[0063] The second chip 3 includes a support member that supports a plurality of second MR elements 50B and a plurality of third MR elements 50C. The support member has at least one inclined surface that is inclined with respect to the upper surface 301a of the substrate 301. In this embodiment in particular, the support member is composed of an insulating layer 305. Figure 9 shows the insulating layer 305, the plurality of second MR elements 50B, the plurality of third MR elements 50C, and the plurality of upper coil elements 82 among the components of the second chip 3.

[0064] The insulating layer 305 has multiple convex surfaces 305c that protrude in the direction away from the upper surface 301a of the substrate 301 (Z direction). Each of the multiple convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surfaces 305c is a triangular roof shape formed by moving the triangular shape of the convex surfaces 305c shown in Figure 10 along the direction parallel to the U direction. Furthermore, the multiple convex surfaces 305c are arranged in a direction parallel to the V direction.

[0065] Here, we focus on any one of the multiple convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is a surface that constitutes a portion of the convex surface 305c on the V-direction side. The second inclined surface 305b is a surface that constitutes a portion of the convex surface 305c on the -V-direction side.

[0066] The top surface 301a of the substrate 301 is parallel to the XY plane. The reference plane 4a is also parallel to the XY plane. The first inclined surface 305a and the second inclined surface 305b are inclined with respect to the top surface 301a of the substrate 301 and the reference plane 4a, respectively. The second inclined surface 305b is oriented in a different direction than the first inclined surface 305a. In a VZ cross section perpendicular to the top surface 301a of the substrate 301, the distance between the first inclined surface 305a and the second inclined surface 305b decreases as the distance from the top surface 301a of the substrate 301 increases.

[0067] In this embodiment, since there are multiple convex surfaces 305c, there are also multiple first inclined surfaces 305a and multiple second inclined surfaces 305b. The insulating layer 305 has multiple first inclined surfaces 305a and multiple second inclined surfaces 305b.

[0068] Multiple lower electrodes 61B are arranged on multiple first inclined surfaces 305a. Multiple lower electrodes 61C are arranged on multiple second inclined surfaces 305b. As described above, since each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined with respect to the XY plane. Furthermore, the reference plane 4a is parallel to the XY plane. Therefore, it can be said that the multiple second MR elements 50B and the multiple third MR elements 50C are arranged on inclined surfaces that are inclined with respect to the reference plane 4a. The insulating layer 305 is a member for supporting each of the multiple second MR elements 50B and the multiple third MR elements 50C so that they are inclined with respect to the reference plane 4a.

[0069] Each of the multiple first inclined surfaces 305a may be a plane in which at least a portion is parallel to the U direction and the W1 direction. Each of the multiple second inclined surfaces 305b may be a plane in which at least a portion is parallel to the U direction and the W2 direction.

[0070] Furthermore, the convex surface 305c may be a semi-cylindrical curved surface formed by moving a curved shape (arch shape) along a direction parallel to the U direction. In this case, the first inclined surface 305a becomes a curved surface. The second MR element 50B curves along the curved surface (first inclined surface 305a). Even in this case, for convenience, the direction of magnetization of the magnetization fixed layer 52 of the second MR element 50B is defined as a linear direction as described above. Similarly, the second inclined surface 305b becomes a curved surface. The third MR element 50C curves along the curved surface (second inclined surface 305b). Even in this case, for convenience, the direction of magnetization of the magnetization fixed layer 52 of the third MR element 50C is defined as a linear direction as described above.

[0071] Although not shown in the figures, the insulating layer 305 further has flat surfaces surrounding the plurality of convex surfaces 305c. The plurality of convex surfaces 305c may protrude from the flat surfaces in the Z direction. Alternatively, the plurality of convex surfaces 305c may be arranged with a predetermined interval between them such that a flat surface is formed between two adjacent convex surfaces 305c. Or, the insulating layer 305 may have grooves recessed in the -Z direction from the flat surfaces. In this case, the plurality of convex surfaces 305c may be located within the grooves.

[0072] As shown in Figure 9, the multiple second MR elements 50B are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. Multiple second MR elements 50B are lined up in a row on one first inclined surface 305a. Similarly, the multiple third MR elements 50C are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. Multiple third MR elements 50C are lined up in a row on one second inclined surface 305b. In this embodiment, the rows of multiple second MR elements 50B and the rows of multiple third MR elements 50C are arranged alternately in a direction parallel to the V direction.

[0073] Multiple second MR elements 50B are connected in series by multiple lower electrodes 61B and multiple upper electrodes 62B. The explanation of the connection method for multiple first MR elements 50A described above also applies to the connection method for multiple second MR elements 50B. When the MR element 50 shown in Figure 11 is a second MR element 50B, the lower electrode 61 shown in Figure 11 corresponds to the lower electrode 61B, and the upper electrode 62 shown in Figure 11 corresponds to the upper electrode 62B. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0074] Similarly, multiple third MR elements 50C are connected in series by multiple lower electrodes 61C and multiple upper electrodes 62C. The explanation above regarding the connection method of multiple first MR elements 50A also applies to the connection method of multiple third MR elements 50C. When the MR element 50 shown in Figure 11 is a third MR element 50C, the lower electrode 61 shown in Figure 11 corresponds to the lower electrode 61C, and the upper electrode 62 shown in Figure 11 corresponds to the upper electrode 62C. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0075] Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. Furthermore, the multiple upper coil elements 82 are arranged so as to be aligned in the X direction. In this embodiment in particular, when viewed from the Z direction, two upper coil elements 82 overlap each of the multiple second MR elements 50B and the multiple third MR elements 50C.

[0076] Each of the multiple lower coil elements 81 extends in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 81 are arranged so as to be aligned in the X direction. The shape and arrangement of the multiple lower coil elements 81 may be the same as or different from the shape and arrangement of the multiple upper coil elements 82.

[0077] In the examples shown in Figures 9 and 10, the multiple lower coil elements 81 and the multiple upper coil elements 82 are electrically connected to constitute a second coil 80 that applies a magnetic field parallel to the X direction to the free layers 54 of each of the multiple second MR elements 50B and the multiple third MR elements 50C. The second coil 80 may also be configured to apply a magnetic field in the X direction to the free layers 54 of the first and second resistors R21, R22 of the second detection circuit 20 and the first and second resistors R31, R32 of the third detection circuit 30, and to apply a magnetic field in the -X direction to the free layers 54 of the third and fourth resistors R23, R24 of the second detection circuit 20 and the third and fourth resistors R33, R34 of the third detection circuit 30. The second coil 80 may also be controlled by the processor 40.

[0078] Next, with reference to Figure 12, the arrangement of the multiple second MR elements 50B and the multiple third MR elements 50C will be described. Figure 12 is a plan view showing the element arrangement region. The second chip 3 has an element arrangement region A0 for arranging the multiple second MR elements 50B and the multiple third MR elements 50C. Since the second chip 3 is a component of the magnetic sensor 1, it can also be said that the magnetic sensor 1 has the element arrangement region A0. In this embodiment, the element arrangement region A0 and the multiple regions described later are defined as planar regions parallel to the XY plane. The multiple second MR elements 50B and the multiple third MR elements 50C overlap the element arrangement region A0 when viewed from the Z direction. In this embodiment, for convenience, the element arrangement region A0 is assumed to be on the upper surface of the insulating layer 305.

[0079] The ratio of the area of ​​the element placement region A0 to the area of ​​the upper surface 3a of the second chip 3 is 2% or more. This ratio may be in the range of 10-90% or 45-75%. In addition, the dimension of the element placement region A0 in the first reference direction Rx may be larger than the dimension in the second reference direction Ry.

[0080] The element arrangement region A0 includes a first region A1, a second region A2, a third region A3, and a fourth region A4. The first region A1 corresponds to the first resistors R21 and R31. The second region A2 corresponds to the second resistors R22 and R32. The third region A3 corresponds to the third resistors R23 and R33. The fourth region A4 corresponds to the fourth resistors R24 and R34. The dimensions of each of the first to fourth regions A1 to A4 in the first reference direction Rx may be larger than the dimensions in the second reference direction Ry.

[0081] Multiple second MR elements 50B are arranged in a divided manner within the first to fourth regions A1 to A4. The second MR elements 50B constituting the first resistor R21 are located in the first region A1. The second MR elements 50B constituting the second resistor R22 are located in the second region A2. The second MR elements 50B constituting the third resistor R23 are located in the third region A3. The second MR elements 50B constituting the fourth resistor R24 ​​are located in the fourth region A4.

[0082] Multiple third MR elements 50C are arranged in a divided manner within the first to fourth regions A1 to A4. The third MR elements 50C constituting the first resistor R31 are located in the first region A1. The third MR elements 50C constituting the second resistor R32 are located in the second region A2. The third MR elements 50C constituting the third resistor R33 are located in the third region A3. The third MR elements 50C constituting the fourth resistor R34 are located in the fourth region A4.

[0083] Next, the arrangement of the first to fourth regions A1 to A4 will be described with reference to Figure 12. The first to fourth regions A1 to A4 are arranged so as to be aligned along the first reference direction Rx. In the example shown in Figure 12, the first to fourth regions A1 to A4 are arranged in the order of regions A2, A3, A1, and A4, from the -X-direction edge of the element arrangement region A0 toward the X-direction edge of the element arrangement region A0. However, in the present invention, the order of arrangement of the first to fourth regions A1 to A4 is not limited to this example.

[0084] In Figure 12, the point labeled C1 indicates the centroid of the first region A1 when viewed from the Z direction. The point labeled C2 indicates the centroid of the second region A2 when viewed from the Z direction. The point labeled C3 indicates the centroid of the third region A3 when viewed from the Z direction. The point labeled C4 indicates the centroid of the fourth region A4 when viewed from the Z direction.

[0085] The centroid C1 of the first region A1 and the centroid C4 of the fourth region A4 are offset from each other in the second reference direction Ry. In the example shown in Figure 12, the position of the centroid C4 of the fourth region A4 in the second reference direction Ry is ahead of the position of the centroid C1 of the first region A1 in the second reference direction Ry, in the -Y direction. The centroid C1 of the first region A1 and the centroid C4 of the fourth region A4 may be offset by the distance in the second reference direction Ry between two adjacent convex surfaces 305c among the multiple convex surfaces 305c.

[0086] The centroid C2 of the second region A2 and the centroid C3 of the third region A3 are offset from each other in the second reference direction Ry. In the example shown in Figure 12, the position of the centroid C3 of the third region A3 in the second reference direction Ry is ahead of the position of the centroid C2 of the second region A2 in the second reference direction Ry, in the -Y direction. The centroid C2 of the second region A2 and the centroid C3 of the third region A3 may be offset by the distance between two adjacent convex surfaces 305c in the second reference direction Ry among the multiple convex surfaces 305c.

[0087] The direction in which the third region A3 shifts relative to the second region A2 may be the same as the direction in which the fourth region A4 shifts relative to the first region A1. Also, the amount of shift of the third region A3 relative to the second region A2 may be the same as, or different from, the amount of shift of the fourth region A4 relative to the first region A1. Furthermore, the position of the centroid C2 of the second region A2 in the second reference direction Ry may be the same as, or different from, the position of the centroid C1 of the first region A1 in the second reference direction Ry. Furthermore, the position of the centroid C4 of the fourth region A4 in the second reference direction Ry may be the same as, or different from, the position of the centroid C3 of the third region A3 in the second reference direction Ry.

[0088] Next, with reference to Figure 12, the shapes of the first to fourth regions A1 to A4 will be described. Here, the first region A1 will be used as an example. The first region A1 has a first edge A1a and a second edge A1b located at both ends in the first reference direction Rx, and a third edge A1c and a fourth edge A1d located at both ends in the second reference direction Ry. The first edge A1a is located at the -X side end of the first region A1. The second edge A1b is located at the X side end of the first region A1. The third edge A1c is located at the -Y side end of the first region A1. The fourth edge A1d is located at the Y side end of the first region A1.

[0089] Each of the first edge A1a and the second edge A1b extends along the second reference direction Ry. Each of the third edge A1c and the fourth edge A1d extends along a third reference direction that intersects each of the first reference direction Rx and the second reference direction Ry and is parallel to the reference plane 4a. In this embodiment in particular, the third reference direction is a direction parallel to one direction between the X direction and the U direction. The angles between the first edge A1a and the third edge A1c and the angles between the second edge A1b and the fourth edge A1d are both obtuse angles. The angles between the first edge A1a and the fourth edge A1d and the angles between the second edge A1b and the third edge A1c are both acute angles.

[0090] Here, we will explain the definitions of the first to fourth edges A1a to A1d. Figure 9 As shown, in the first region A1, multiple rows of elements, each consisting of multiple MR elements 50 (multiple second MR elements 50B and multiple third MR elements 50C) arranged in a line along the second reference direction Ry, are arranged along the first reference direction Rx. At least a portion of the first edge A1a may coincide with a first line defined by multiple MR elements 50 included in the element row located furthest towards the -X direction in the first region A1. The first line is obtained by shifting the line connecting the above multiple MR elements 50 with the shortest length so as not to overlap with the multiple MR elements 50 when viewed from the Z direction. The first line is parallel to the second reference direction Ry. The first edge A1a substantially indicates the position of the above multiple MR elements 50.

[0091] At least a portion of the second edge A1b may coincide with a second line defined by a plurality of MR elements 50 included in the element row located furthest towards the X direction in the first region A1. The second line is obtained by shifting the line connecting the plurality of MR elements 50 by the shortest length toward the X direction of the plurality of MR elements 50 so that it does not overlap with the plurality of MR elements 50 when viewed from the Z direction. The second line is parallel to the second reference direction Ry. The second edge A1b substantially indicates the position of the plurality of MR elements 50.

[0092] At least a portion of the third edge A1c may coincide with a third line defined by a plurality of MR elements 50 located furthest to the -Y direction in each of the plurality of element rows. The third line is obtained by shifting the line connecting the plurality of MR elements 50 by the shortest length toward the -Y direction of the plurality of MR elements 50 so as not to overlap with the plurality of MR elements 50 when viewed from the Z direction. The third line is parallel to the third reference direction. The third edge A1c substantially indicates the position of the plurality of MR elements 50.

[0093] At least a portion of the fourth edge A1d may coincide with a fourth line defined by the plurality of MR elements 50 located furthest to the Y direction in each of the plurality of element rows. The fourth line is obtained by shifting the line connecting the plurality of MR elements 50 by the shortest length toward the Y direction of the plurality of MR elements 50 so that it does not overlap with the plurality of MR elements 50 when viewed from the Z direction. The fourth line is parallel to the third reference direction. The fourth edge A1d substantially indicates the position of the plurality of MR elements 50.

[0094] One end of the third edge A1c may be directly connected to one end of the first edge A1a, or it may be connected via a fifth edge connecting one end of the third edge A1c and one end of the first edge A1a. The other end of the third edge A1c may be directly connected to one end of the second edge A1b, or it may be connected via a sixth edge connecting the other end of the third edge A1c and one end of the second edge A1b. One end of the fourth edge A1d may be directly connected to the other end of the first edge A1a, or it may be connected via a seventh edge connecting one end of the fourth edge A1d and the other end of the first edge A1a. The other end of the fourth edge A1d may be directly connected to the other end of the second edge A1b, or it may be connected via an eighth edge connecting the other end of the fourth edge A1d and the other end of the second edge A1b. Each of the fifth through eighth edges may extend in a direction intersecting each of the first reference direction Rx, the second reference direction Ry, and the third reference direction.

[0095] The first region A1 may be a region enclosed only by the first to fourth edges A1a to A1d, or it may be a region enclosed by the first to fourth edges A1a to A1d in addition to at least one of the fifth to eighth edges.

[0096] The second region A2 has a first edge A2a, a second edge A2b, a third edge A2c, and a fourth edge A2d. The description of the first to fourth edges A1a to A1d of the first region A1 also applies to the first to fourth edges A2a to A2d of the second region A2. If we replace the first region A1 and the first to fourth edges A1a to A1d in the description of the first to fourth edges A1a to A1d of the first region A1 with the second region A2 and the first to fourth edges A2a to A2d, respectively, we get the description of the first to fourth edges A2a to A2d of the second region A2. Note that the third reference direction in the second region A2 may or may not be the same as the third reference direction in the first region A1.

[0097] The third region A3 has a first edge A3a, a second edge A3b, a third edge A3c, and a fourth edge A3d. The description of the first to fourth edges A1a to A1d of the first region A1 also applies to the first to fourth edges A3a to A3d of the third region A3. If the first region A1 and the first to fourth edges A1a to A1d of the first region A1 are replaced with the third region A3 and the first to fourth edges A3a to A3d, respectively, then the description of the first to fourth edges A3a to A3d of the third region A3 is obtained. Note that the third reference direction in the third region A3 may or may not be the same as the third reference direction in the first region A1.

[0098] The fourth region A4 has a first edge A4a, a second edge A4b, a third edge A4c, and a fourth edge A4d. The description of the first to fourth edges A1a to A1d of the first region A1 also applies to the first to fourth edges A4a to A4d of the fourth region A4. If we replace the first region A1 and the first to fourth edges A1a to A1d in the description of the first to fourth edges A1a to A1d of the first region A1 with the fourth region A4 and the first to fourth edges A4a to A4d, respectively, we get the description of the first to fourth edges A4a to A4d of the fourth region A4. Note that the third reference direction in the fourth region A4 may or may not be the same as the third reference direction in the first region A1.

[0099] Next, the element placement region of the first chip 2 will be described. Although not shown in the figures, the first chip 2 has an element placement region for arranging a plurality of first MR elements 50A. In this embodiment, the element placement region of the first chip 2 and the plurality of regions described later are defined as planar regions parallel to the XY plane. The plurality of first MR elements 50A overlap with the element placement region of the first chip 2 when viewed from the Z direction. In this embodiment, for convenience, the element placement region of the first chip 2 is assumed to be on the upper surface of the insulating layer 204.

[0100] The ratio of the area of ​​the element placement region to the area of ​​the upper surface 2a of the first chip 2 is 2% or more. This ratio may be in the range of 10-90% or 45-75%.

[0101] The element arrangement region of the first chip 2 includes a first region corresponding to the first resistor R11, a second region corresponding to the second resistor R12, a third region corresponding to the third resistor R13, and a fourth region corresponding to the fourth resistor R14. Multiple first MR elements 50A are arranged in the first to fourth regions. The first MR element 50A constituting the first resistor R11 is arranged in the first region. The first MR element 50A constituting the second resistor R12 is arranged in the second region. The first MR element 50A constituting the third resistor R13 is arranged in the third region. The first MR element 50A constituting the fourth resistor R14 is arranged in the fourth region.

[0102] Next, the multiple convex surfaces 305c will be described in detail. The magnetic sensor 1 has multiple structures, each having a structure that causes multiple MR elements 50 to detect a specific component of the target magnetic field. In this embodiment, multiple second MR elements 50B are arranged on each of the multiple first inclined surfaces 305a. Each of the multiple first inclined surfaces 305a has a structure that is inclined with respect to the upper surface 301a and the reference plane 4a in order to cause the multiple second MR elements 50B to detect a component of the target magnetic field in a direction parallel to the W1 direction. Therefore, the multiple first inclined surfaces 305a correspond to the "multiple structures" of the present invention.

[0103] Furthermore, in this embodiment, multiple third MR elements 50C are arranged on each of the multiple second inclined surfaces 305b. Each of the multiple second inclined surfaces 305b has a structure that is inclined with respect to the upper surface 301a, i.e., the reference plane 4a, in order to cause the multiple third MR elements 50C to detect the component of the target magnetic field in a direction parallel to the W2 direction. Therefore, the multiple second inclined surfaces 305b correspond to the "multiple structures" of the present invention.

[0104] Furthermore, each of the multiple convex surfaces 305c includes a first inclined surface 305a and a second inclined surface 305b. Therefore, the multiple convex surfaces 305c also correspond to the "multiple structures" of the present invention. The features of the "multiple structures" of the present invention will be described below using the multiple convex surfaces 305c as an example.

[0105] Figure 13 is a plan view showing multiple convex surfaces 305c. For convenience, in Figure 13, a gap is shown between two adjacent convex surfaces 305c. Figure 13 also shows the first to fourth regions A1 to A4 of the element placement region A0 of the second chip 3. Multiple convex surfaces 305c are present in the first to fourth regions A1 to A4 of the element placement region A0 of the second chip 3, but not in the first to fourth regions of the element placement region of the first chip 2.

[0106] Each of the multiple convex surfaces 305c extends in a direction that intersects the first reference direction Rx at an angle other than 90°. In particular in this embodiment, each of the multiple convex surfaces 305c extends in a direction parallel to the U direction. Furthermore, the multiple convex surfaces 305c include convex surfaces 305c that extend across at least two of the first to fourth regions A1 to A4. The multiple convex surfaces 305c further include convex surfaces 305c that extend across only one of the first to fourth regions A1 to A4.

[0107] The relationship between the multiple convex surfaces 305c and the first to fourth regions A1 to A4 will be explained in more detail below. The multiple convex surfaces 305c include convex surfaces 305c that extend only to the second region A2 and convex surfaces 305c that extend only to the fourth region A4. The multiple convex surfaces 305c further include convex surfaces 305c that extend across the second and third regions A2 and A3 but not to the first and fourth regions A1 and A4, and convex surfaces 305c that extend across the first and fourth regions A1 and A4 but not to the second and third regions A2 and A3. The multiple convex surfaces 305c further include convex surfaces 305c that extend across the first to third regions A1 to A3 but not across the fourth region A4, and convex surfaces 305c that extend across the first, third, and fourth regions A1, A3, and A4 but not across the second region A2. The multiple convex surfaces 305c further include convex surfaces 305c that extend across the first to fourth regions A1 to A4.

[0108] Furthermore, each convex surface 305c has a first end and a second end located at both ends in the longitudinal direction of the convex surface 305c. The first and second ends of each of the multiple convex surfaces 305c are not located inside each of the first to fourth regions A1 to A4, nor between two adjacent regions among the first to fourth regions A1 to A4.

[0109] Figure 14 is an explanatory diagram showing a convex surface 305c and the first and fourth edges A1a and A1d of the first region A1. Here, the angle θ1 that the convex surface 305c makes with the first edge A1a and the angle θ2 that the convex surface 305c makes with the fourth edge A1d are defined as follows. The convex surface 305c has a third end 305c1, which is the end on the -V direction side of the convex surface 305c, and a fourth end 305c2, which is the end on the V direction side of the convex surface 305c. In this embodiment, the angle (acute angle) that the third end 305c1 makes with the first edge A1a is defined as angle θ1, and the angle (acute angle) that the fourth end 305c2 makes with the fourth edge A1d is defined as angle θ2.

[0110] Angle θ1 is greater than angle θ2. Angle θ1 may be within the range of 43° to 47°. Angle θ2 may be less than 45° and within the range of 38° to 42°. Also, the sum of angles θ1 and θ2 may be within the range of 81° to 89°.

[0111] In this embodiment, the angle (acute angle) that the third end portion 305c1 makes with the second edge A1b is defined as the angle that the convex surface 305c makes with the second edge A1b, and the angle (acute angle) that the fourth end portion 305c2 makes with the third edge A1c is defined as the angle that the convex surface 305c makes with the third edge A1c. The angle that the convex surface 305c makes with the second edge A1b may be equal to angle θ1. The angle that the convex surface 305c makes with the third edge A1c may be equal to angle θ2. The angle that the convex surface 305c makes with the first edge A1a or the second edge A1b (angle θ1) is greater than the angle that the convex surface 305c makes with the third edge A1c or the fourth edge A1d (angle θ2).

[0112] In this embodiment, the angle that the first inclined surface 305a or the second inclined surface 305b makes with respect to each of the first to fourth edges A1a to A1d is equal to the angle that the convex surface 305c makes with respect to each of the first to fourth edges A1a to A1d.

[0113] Up to this point, we have focused on one convex surface 305c and explained the relationship between the convex surface 305c and the first to fourth edges A1a to A1d of the first region A1. The above explanation also applies to other multiple convex surfaces 305c. Furthermore, the relationship between multiple convex surfaces 305c and the first to fourth edges A1a to A1d of the first region A1 also applies to the relationship between multiple convex surfaces 305c and the first to fourth edges A2a to A2d of the second region A2, the relationship between multiple convex surfaces 305c and the first to fourth edges A3a to A3d of the third region A3, and the relationship between multiple convex surfaces 305c and the first to fourth edges A4a to A4d of the fourth region A4.

[0114] Next, with reference to Figure 15, the arrangement of the multiple MR elements 50 (multiple second MR elements 50B and multiple third MR elements 50C) in the first region A1 will be described. Figure 15 is an explanatory diagram showing multiple MR elements in a part of the first region A1.

[0115] Each of the multiple MR elements 50 has a shape that is elongated in a direction different from the first reference direction Rx, the second reference direction Ry, and the third reference direction. In particular, in this embodiment, each of the multiple MR elements 50 has a shape that is elongated in a direction parallel to the U direction.

[0116] As shown in Figure 15, in the first region A1, the multiple MR elements 50 are arranged in a line in groups of multiples along the second reference direction Ry, and also in a line in groups of multiples along the direction parallel to the longitudinal direction of each of the multiple MR elements 50 in the first region A1, i.e., the direction parallel to the U direction.

[0117] In this embodiment, the distance between any two MR elements 50 is expressed as the distance between the centroid of one MR element 50 as viewed from the Z direction and the centroid of the other MR element 50 as viewed from the Z direction. As shown in Figure 15, the distance between two adjacent MR elements 50 in the first region A1 in the direction parallel to the longitudinal direction of the MR elements 50, i.e., the direction parallel to the U direction, in the first reference direction Rx is represented by the symbol Dx0. Also, the distance between two adjacent MR elements 50 in the direction parallel to the U direction in the second reference direction Ry is represented by the symbol Dy0. The distance Dx0 may be equal to the distance Dy0, or it may be different from the distance Dy0.

[0118] Furthermore, the distance between two adjacent MR elements 50 in the second reference direction Ry is represented by the symbol Dy1. In this embodiment, the distance Dy1 is smaller than the distance Dy0.

[0119] Next, the first to third detection signals will be described. First, the first detection signal will be described with reference to Figure 4. When the intensity of the component of the target magnetic field parallel to the U direction changes, the resistance values ​​of each of the resistors R11 to R14 of the first detection circuit 10 change such that the resistance values ​​of resistors R11 and R13 increase while the resistance values ​​of resistors R12 and R14 decrease, or the resistance values ​​of resistors R11 and R13 decrease while the resistance values ​​of resistors R12 and R14 increase. As a result, the potentials of the signal output terminals E11 and E12 change. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11, and a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0120] Next, the second detection signal will be explained with reference to Figure 5. When the intensity of the component of the target magnetic field parallel to the W1 direction changes, the resistance values ​​of the resistors R21 to R24 of the second detection circuit 20 change such that the resistance values ​​of resistors R21 and R23 increase while the resistance values ​​of resistors R22 and R24 decrease, or the resistance values ​​of resistors R21 and R23 decrease while the resistance values ​​of resistors R22 and R24 increase. As a result, the potentials of the signal output terminals E21 and E22 change. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21, and a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22.

[0121] Next, the third detection signal will be described with reference to Figure 6. When the intensity of the component of the target magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 of the third detection circuit 30 change such that the resistance values ​​of resistors R31 and R33 increase while the resistance values ​​of resistors R32 and R34 decrease, or the resistance values ​​of resistors R31 and R33 decrease while the resistance values ​​of resistors R32 and R34 increase. As a result, the potentials of the signal output terminals E31 and E32 change. The third detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31, and a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32.

[0122] Next, the operation of the processor 40 will be described. The processor 40 is configured to generate a first detection value based on the first detection signals S11 and S12. The first detection value is the detection value corresponding to the component in the direction parallel to the U direction of the target magnetic field. Hereafter, the first detection value will be represented by the symbol Su.

[0123] In this embodiment, the processor 40 generates a first detected value Su by performing a calculation that includes determining the difference S11-S12 between the first detected signal S11 and the first detected signal S12. The first detected value Su may be the difference S11-S12 itself, or it may be the difference S11-S12 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0124] The processor 40 is further configured to generate a second detection value and a third detection value based on the second detection signals S21, S22 and the third detection signals S31, S32. The second detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the V direction. The third detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the second detection value will be denoted by the symbol Sv and the third detection value will be denoted by the symbol Sz.

[0125] The processor 40 generates the second and third detection values ​​Sv and Sz, for example, as follows. First, the processor 40 generates value S1 by a calculation that includes finding the difference S21-S22 between the second detection signal S21 and the second detection signal S22, and then generates value S2 by a calculation that includes finding the difference S31-S32 between the third detection signal S31 and the third detection signal S32. Next, the processor 40 calculates values ​​S3 and S4 using the following equations (1) and (2).

[0126] S3 = (S2 + S1) / (2cosα) …(1) S4 = (S2 - S1) / (2sinα) …(2)

[0127] The second detected value Sv may be the value S3 itself, or it may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment have been applied. Similarly, the third detected value Sz may be the value S4 itself, or it may be the value S4 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0128] Next, the effects of the magnetic sensor 1 according to this embodiment will be explained in comparison with the magnetic sensors of the first to fourth comparative examples. First, the magnetic sensor 401 of the first comparative example A This will be explained. Figure 16 shows the magnetic sensor 401 of the first comparative example. A This is a plan view showing multiple convex surfaces in the first comparative example, magnetic sensor 401. A This embodiment uses the comparative example chip 403 instead of the second chip 3. The comparative example chip 403 includes a comparative example insulating layer having a plurality of convex surfaces 405c instead of the insulating layer 305 in this embodiment. The other configurations of the comparative example chip 403 are the same as those of the second chip 3.

[0129] The comparative example chip 403 has an element arrangement region corresponding to the element arrangement region A0 in this embodiment. The element arrangement region of the comparative example chip 403 includes the first region A401, the second region A402, the third region A403, and the fourth region A404, which correspond to the first region A1, the second region A2, the third region A3, and the fourth region A4 in this embodiment, respectively. The arrangement of the first to fourth regions A401 to A404 is as follows: A4 This arrangement is similar to that of [another arrangement].

[0130] The shape of each of the multiple convex surfaces 405c is basically the same as the shape of each of the multiple convex surfaces 305c. However, each of the multiple convex surfaces 405c extends to only one of the first to fourth regions A401 to A404, and does not extend across two or more of the first to fourth regions A401 to A404.

[0131] The convex surface 405c has a first end and a second end located at both ends in the longitudinal direction of the convex surface 405c. Between any two adjacent regions from the first to fourth regions A401 to A404, there are multiple first ends and multiple second ends.

[0132] Multiple MR elements 50 are formed on multiple convex surfaces 405c. In order to form the MR elements 50 with high precision, it is necessary to form the multiple convex surfaces 405c with high precision. The multiple convex surfaces 405c are formed, for example, by etching the insulating layer of the comparative example.

[0133] Here, we focus on the space between two adjacent regions from the first to fourth regions A401 to A404. In this space, multiple first ends and multiple second ends face each other. If the distance between the multiple first ends and the multiple second ends becomes small, it becomes difficult to accurately form the multiple convex surfaces 405c. Therefore, it is necessary to increase the distance between the multiple first ends and the multiple second ends, that is, the distance between the two regions, to a certain extent. When comparing the first to fourth regions A401 to A404 with the same area, the element placement area of ​​the comparative example chip 403 increases as the distance between the two regions increases. As a result, the area of ​​the comparative example chip 403 when viewed from the Z direction also increases.

[0134] In contrast, in this embodiment, most of the multiple convex surfaces 305c extend across at least two of the first to fourth regions A1 to A4. Between two adjacent regions A1 to A4, there are no first or second ends of each of the multiple convex surfaces 305c. As a result, according to this embodiment, the distance between the two regions can be reduced, thereby reducing the area of ​​the element arrangement region A0 and the area of ​​the second chip 3 when viewed from the Z direction. Consequently, according to this embodiment, the magnetic sensor 1 can be miniaturized. Furthermore, by miniaturizing the magnetic sensor 1, the magnetic sensor device 100 can also be miniaturized.

[0135] Next, we will describe the magnetic sensor 401B of the second comparative example. Figure 17 is a plan view showing one convex surface in the magnetic sensor 401B of the second comparative example.

[0136] The configuration of the magnetic sensor 401B in the second comparative example differs from the configuration of the magnetic sensor 401A in the first comparative example in the following respects. In the second comparative example, each of the multiple convex surfaces 405c extends in a direction parallel to one direction between the U direction and the -Y direction.

[0137] The first region A401 has the same or similar shape as the first region A1 in this embodiment. The first region A401 has a first edge, a second edge, a third edge, and a fourth edge, which correspond to the first edge A1a, the second edge A1b, the third edge A1c, and the fourth edge A1d in the embodiment, respectively. Here, the angle that the convex surface 405c makes with the first edge of the first region A401 is called the first angle, and the angle that the convex surface 405c makes with the fourth edge of the first region A401 is called the second angle. The definitions of the first and second angles are the same as the definitions of angles θ1 and θ2 shown in Figure 14, respectively. In the second comparative example, the first angle is smaller than the second angle. In particular, in the second comparative example, the first angle is smaller than 45°.

[0138] Figure 17 shows one convex surface 305c in this embodiment, in addition to one convex surface 405c in the second comparative example. One convex surface 305c passes through the corner (see Figure 12) where the first edge A2a and the fourth edge A2d of the second region A2 intersect, and extends across the first to fourth regions A1 to A4. One convex surface 405c passes through the position corresponding to the above-mentioned corner.

[0139] The convex surface 405c shown in Figure 17 extends across the first to third regions A401 to A403, but does not extend into the fourth region A404. In other words, in the second comparative example, the number of convex surfaces 405c extending across multiple regions, including the fourth region A404, is smaller compared to this embodiment. Instead, in the second comparative example, the number of convex surfaces 405c extending only into the fourth region A404 is larger.

[0140] In order to accurately form the MR element 50, the distance between the MR element 50 and the first or second end of the convex surface 405c needs to be somewhat large. Therefore, when comparing with the same number of MR elements 50, in order to form the MR elements 50 accurately while reducing the size of the chip 403, it is necessary to reduce the number of first and second ends of the convex surface 405c, that is, to reduce the number of convex surfaces 405c. However, in the second comparison example, as mentioned above, the number of convex surfaces 405c extending only to the fourth region A404 increases, so the area of ​​the fourth region A404 increases, and the area of ​​the chip 403 when viewed from the Z direction also increases.

[0141] In contrast, in this embodiment, the number of convex surfaces 305c extending only to the fourth region A4 can be reduced compared to the second comparative example. As a result, according to this embodiment, the area of ​​the fourth region A4 and the area of ​​the second chip 3 when viewed from the Z direction can be reduced. Consequently, according to this embodiment, the magnetic sensor 1 can be miniaturized.

[0142] Next, we will describe the magnetic sensor 401C of the third comparative example. Figure 18 is a plan view showing the multiple convex surfaces 405c in the magnetic sensor 401C of the third comparative example.

[0143] The configuration of the magnetic sensor 401C in the third comparative example differs from the configuration of the magnetic sensor 401A in the first comparative example in the following respects. In the third comparative example, the centroid of the first region A401, the centroid of the second region A402, the centroid of the third region A403, and the centroid of the fourth region A404, when viewed from the Z direction, are all at the same position in the second reference direction Ry.

[0144] Here, we focus on the specific convex surface 405c1 indicated by reference numeral 405c1 in Figure 18. The specific convex surface 405c1 includes the first and second inclined surfaces corresponding to the first and second inclined surfaces 305a and 305b in this embodiment. The specific convex surface 405c1 extends across the first to fourth regions A401 to A404. The first inclined surface, which is the inclined surface on the V-direction side of the specific convex surface 405c1, exists in all of the first to fourth regions A401 to A404. On the other hand, the second inclined surface, which is the inclined surface on the -V-direction side of the specific convex surface 405c1, exists in the first to third regions A401 to A403, but not in the fourth region A404. In this case, in the fourth region A404, the third MR element 50C cannot be formed on the second inclined surface of the specific convex surface 405c1.

[0145] Thus, in the third comparative example, there may be convex surfaces 405c on which MR elements 50 cannot be formed. In contrast, in this embodiment, the centroids of two specific regions from the first to fourth regions A1 to A4 are shifted along the second reference direction Ry. For example, when a specific region includes one of the first and second inclined surfaces 305a and 305b, the number of first inclined surfaces 305a or second inclined surfaces 305b extending across multiple regions can be increased by shifting the specific region so that it includes both the first and second inclined surfaces 305a and 305b. Also, when a specific region includes one of the first and second inclined surfaces 305a and 305b, the area of ​​convex surfaces 305c included in the specific region on which MR elements 50 cannot be formed can be reduced by shifting the specific region so that it does not include both the first and second inclined surfaces 305a and 305b. This makes it possible to accurately form multiple MR elements 50 in a specific region.

[0146] Next, we will describe the magnetic sensor 401D of the fourth comparative example. Figure 19 is a plan view showing a portion of the first region A401 in the magnetic sensor 401D of the fourth comparative example.

[0147] The configuration of the magnetic sensor 401C of the fourth comparative example differs from the configuration of the magnetic sensor 401A of the first comparative example in the following respects. In the fourth comparative example, the multiple MR elements 50 in the first region A401 are arranged in rows of multiples along the second reference direction Ry and in rows of multiples along the first reference direction Rx.

[0148] Here, as in Figure 15, the spacing between two adjacent MR elements 50 in the direction parallel to the longitudinal direction of the MR element 50, i.e., parallel to the U direction, in the first reference direction Rx is represented by the symbol Dx0. Also, the spacing between two adjacent MR elements 50 in the direction parallel to the U direction, in the second reference direction Ry, is represented by the symbol Dy0. In the fourth comparison example, the spacing between two adjacent MR elements 50 in the second reference direction Ry is equal to the spacing Dy0.

[0149] In contrast, in this embodiment, as explained with reference to Figure 15, the spacing Dy1 between two adjacent MR elements 50 in the second reference direction Ry is smaller than the spacing Dy0. When comparing with the same number of MR elements present in the first region A1, as in this embodiment, when the spacing Dy1 is smaller than the spacing Dy0, the first region A1 can be made smaller compared to when the spacing Dy1 is equal to the spacing Dy0.

[0150] The above description of the first region A1 also applies to the second to fourth regions A2 to A4. Therefore, according to this embodiment, the area of ​​the element arrangement region A0 and the area of ​​the second chip 3 when viewed from the Z direction can be reduced. As a result, according to this embodiment, the magnetic sensor 1 can be miniaturized.

[0151] In Figure 19, the first edge of the first region A401 is indicated by the symbol A401a, and the fourth edge of the first region A401 is indicated by the symbol A401d. In the fourth comparative example, the fourth edge A401d extends in a direction parallel to the first reference direction Rx. Although not shown in the figure, in the fourth comparative example, the third edge of the first region A401 also extends in a direction parallel to the first reference direction Rx.

[0152] The above explanation for the first region A401 also applies to the second through fourth regions A402 to A404.

[0153] [Differentiation] Next, first and second modified examples of the magnetic sensor 1 according to this embodiment will be described. First, the first modified example will be described with reference to Figure 20. Figure 20 is a plan view showing the first to fourth regions A1 to A4 in the first modified example. In the first modified example, the position of the centroid C4 of the fourth region A4 in the second reference direction Ry is ahead in the Y direction of the position of the centroid C1 of the first region A1 in the second reference direction Ry. The position of the centroid C3 of the third region A3 in the second reference direction Ry is ahead in the Y direction of the position of the centroid C2 of the second region A2 in the second reference direction Ry.

[0154] Next, a second modification will be described with reference to Figure 21. Figure 21 is a plan view showing the first to fourth regions A1 to A4 in the second modification. In the second modification, the position of the centroid C4 of the fourth region A4 in the second reference direction Ry is ahead in the Y direction of the position of the centroid C1 of the first region A1 in the second reference direction Ry. The position of the centroid C3 of the third region A3 in the second reference direction Ry is ahead in the -Y direction of the position of the centroid C2 of the second region A2 in the second reference direction Ry. In the second modification, the direction in which the third region A3 is shifted relative to the second region A2 is opposite to the direction in which the fourth region A4 is shifted relative to the first region A1.

[0155] In the second modified example, the position of the centroid C2 of the second region A2 in the second reference direction Ry may or may not be the same as the position of the centroid C4 of the fourth region A4 in the second reference direction Ry. Also, the position of the centroid C3 of the third region A3 in the second reference direction Ry may or may not be the same as the position of the centroid C1 of the first region A1 in the second reference direction Ry.

[0156] [Second Embodiment] Next, a second embodiment of the present invention will be described with reference to Figure 22. Figure 22 is a plan view showing the element arrangement region A0 in this embodiment.

[0157] In this embodiment, the extension directions of the third and fourth edges of each of the first to fourth regions A1 to A4 differ from those of the first embodiment. As described in the first embodiment, the third edge A1c and the fourth edge A1d of the first region A1 each extend along the third reference direction. In particular, in this embodiment, the third reference direction is a direction parallel to one direction between the X direction and the V direction. The angles between the first edge A1a and the third edge A1c, and the angles between the second edge A1b and the fourth edge A1d are both acute angles. The angles between the first edge A1a and the fourth edge A1d, and the angles between the second edge A1b and the third edge A1c are both obtuse angles.

[0158] Similar to the first embodiment, the angle θ1 that the convex surface 305c makes with the first edge A1a may be greater than the angle θ2 that the convex surface 305c makes with the fourth edge A1d (see Figure 14). Also, the angle that the convex surface 305c makes with the second edge A1b may be equal to angle θ1. The angle that the convex surface 305c makes with the third edge A1c may be equal to angle θ2. The angle that the convex surface 305c makes with the first edge A1a or the second edge A1b (angle θ1) may be greater than the angle that the convex surface 305c makes with the third edge A1c or the fourth edge A1d (angle θ2).

[0159] The above description of the first to fourth edges A1a to A1d of the first region A1 also applies to the first to fourth edges A2a to A2d of the second region A2, the first to fourth edges A3a to A3d of the third region A3, and the first to fourth edges A4a to A4d of the fourth region A4.

[0160] Next, the effects of the magnetic sensor 1 according to this embodiment will be described in comparison with the magnetic sensor of the fifth comparative example. Figure 23 is a plan view showing one convex surface in the magnetic sensor of the fifth comparative example. The configuration of the magnetic sensor 401E of the fifth comparative example is basically the same as the configuration of the magnetic sensor 401B of the second comparative example described in the first embodiment (see Figure 17). However, in the magnetic sensor 401E of the fifth comparative example, the shape and arrangement of the first to fourth regions A401 to A404 of the element arrangement region of the comparative example chip 403 are the same as the shape and arrangement of the first to fourth regions A1 to A4 in this embodiment.

[0161] Furthermore, in the fifth comparative example magnetic sensor, the first angle that the convex surface 405c of the comparative example chip 403 makes with respect to the first edge of the first region A401 is 45° or less. The first angle is smaller than the second angle that the convex surface 405c makes with respect to the fourth edge of the first region A401.

[0162] Figure 23 shows one convex surface 305c in this embodiment, in addition to one convex surface 405c in the fifth comparative example. One convex surface 305c passes through the corner (see Figure 12) where the first edge A2a and the fourth edge A2d of the second region A2 intersect, and extends across the first to fourth regions A1 to A4. One convex surface 405c passes through the position corresponding to the above-mentioned corner.

[0163] The convex surface 405c shown in Figure 23 extends across the first to third regions A401 to A403, but does not extend into the fourth region A404. In other words, in the fifth comparative example, the number of convex surfaces 405c extending across multiple regions, including the fourth region A404, is smaller compared to this embodiment. Instead, in the fifth comparative example, the number of convex surfaces 405c extending only into the fourth region A404 is larger.

[0164] In contrast, in this embodiment, the number of convex surfaces 305c extending only to the fourth region A4 can be reduced compared to the fifth comparative example.

[0165] In this embodiment, under the condition that the angle between the first edge A1a and the third edge A1c and the angle between the second edge A1b and the fourth edge A1d are both acute angles, and the angle between the first edge A1a and the fourth edge A1d and the angle between the second edge A1b and the third edge A1c are both obtuse angles, the angle θ1 that the convex surface 305c makes with the first edge A1a may be smaller than the angle θ2 that the convex surface 305c makes with the fourth edge A1d. Also under this condition, the angle θ2 may be greater than 45°. Even in such a case, the number of convex surfaces 305c that extend only into the fourth region A4 can be reduced to some extent.

[0166] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0167] [Third Embodiment] Next, a third embodiment of the present invention will be described with reference to Figure 24. Figure 24 is a plan view showing the element arrangement region A0 in this embodiment.

[0168] In this embodiment, the extension directions of the third and fourth edges of each of the first to fourth regions A1 to A4 differ from those of the first embodiment. That is, the third edge A1c and the fourth edge A1d of the first region A1 each extend along the first reference direction Rx. The angles between the first edge A1a and the third edge A1c, the angles between the second edge A1b and the fourth edge A1d, the angles between the first edge A1a and the fourth edge A1d, and the angles between the third edge A1c and the fourth edge A1d are all 90° or approximately 90°.

[0169] Similar to the first embodiment, the angle θ1 that the convex surface 305c makes with the first edge A1a is greater than the angle θ2 that the convex surface 305c makes with the fourth edge A1d (see Figure 12). Also, the angle that the convex surface 305c makes with the second edge A1b may be equal to angle θ1. The angle that the convex surface 305c makes with the third edge A1c may be equal to angle θ2. The angle that the convex surface 305c makes with the first edge A1a or the second edge A1b (angle θ1) is greater than the angle that the convex surface 305c makes with the third edge A1c or the fourth edge A1d (angle θ2).

[0170] The above description of the first to fourth edges A1a to A1d of the first region A1 also applies to the first to fourth edges A2a to A2d of the second region A2, the first to fourth edges A3a to A3d of the third region A3, and the first to fourth edges A4a to A4d of the fourth region A4.

[0171] Next, the effects of the magnetic sensor 1 according to this embodiment will be described in comparison with the magnetic sensor of the sixth comparative example. Figure 25 is a plan view showing one convex surface in the magnetic sensor of the sixth comparative example. The configuration of the magnetic sensor 401F of the sixth comparative example is basically the same as the configuration of the magnetic sensor 401B of the second comparative example described in the first embodiment (see Figure 17). However, in the magnetic sensor 401E of the sixth comparative example, the shape and arrangement of the first to fourth regions A401 to A404 of the element arrangement region of the comparative example chip 403 are the same as the shape and arrangement of the first to fourth regions A1 to A4 in this embodiment.

[0172] Furthermore, in the sixth comparative example magnetic sensor, the first angle that the convex surface 405c of the comparative example chip 403 makes with respect to the first edge of the first region A401 is 45° or less. The first angle is less than or equal to the second angle that the convex surface 405c makes with respect to the fourth edge of the first region A401.

[0173] Figure 25 shows one convex surface 305c in this embodiment, in addition to one convex surface 405c in the second comparative example. One convex surface 305c passes through the corner (see Figure 12) where the first edge A2a and the fourth edge A2d of the second region A2 intersect, and extends across the first to fourth regions A1 to A4. One convex surface 405c passes through the position corresponding to the above-mentioned corner.

[0174] The convex surface 405c shown in Figure 25 extends across the first to third regions A401 to A403, but does not extend into the fourth region A404. In other words, in the sixth comparative example, the number of convex surfaces 405c extending across multiple regions, including the fourth region A404, is smaller compared to this embodiment. Instead, in the sixth comparative example, the number of convex surfaces 405c extending only into the fourth region A404 is larger.

[0175] In contrast, in this embodiment, the number of convex surfaces 305c extending only to the fourth region A4 can be reduced compared to the sixth comparative example.

[0176] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0177] [Fourth Embodiment] Next, a fourth embodiment of the present invention will be described with reference to Figure 26. Figure 26 is a plan view showing a plurality of convex surfaces 305c in this embodiment. In this embodiment, the element arrangement region A0 of the second chip 3 includes a first region A11, a second region A12, a third region A13, and a fourth region A14, instead of the first to fourth regions A1 to A4 in the first embodiment.

[0178] The first region A11 corresponds to the first resistor R21 of the second detection circuit 20 (see Figure 5) and the first resistor R31 of the third detection circuit 30 (see Figure 6). The second region A12 corresponds to the second resistor R22 of the second detection circuit 20 (see Figure 5) and the second resistor R32 of the third detection circuit 30 (see Figure 6). The third region A13 corresponds to the third resistor R23 of the second detection circuit 20 (see Figure 5) and the third resistor R33 of the third detection circuit 30 (see Figure 6). The fourth region A14 corresponds to the fourth resistor R24 ​​of the second detection circuit 20 (see Figure 5) and the fourth resistor R34 of the third detection circuit 30 (see Figure 6).

[0179] In this embodiment, the multiple second MR elements 50B of the second detection circuit 20 are arranged in a divided manner into first to fourth regions A11 to A14. The multiple third MR elements 50C of the third detection circuit 30 are arranged in a divided manner into first to fourth regions A11 to A14.

[0180] The first and fourth regions A11 and A14 are arranged to align along the first reference direction Rx. The first region A11 is located near the edge of the element placement region A0 on the X side. The fourth region A14 is located near the edge of the element placement region A0 on the -X side. The second and third regions A12 and A13 are located ahead of the first and fourth regions A11 and A14 in the -Y direction, respectively.

[0181] Each of the first to fourth regions A11 to A14 has a first edge and a second edge located at both ends in the first reference direction Rx, and a third edge and a fourth edge located at both ends in the second reference direction Ry. The first to fourth edges of each of the first to fourth regions A11 to A14 may have the same characteristics as the first to fourth edges A1a to A1d of the first region A1 in the first embodiment, except for the length of each of the first to fourth edges.

[0182] The multiple convex surfaces 305c include convex surfaces 305c that extend only to the first region A11 and convex surfaces 305c that extend only to the third region A13. The multiple convex surfaces 305c further include convex surfaces 305c that extend across the first and second regions A11 and A12 but not to the third and fourth regions A13 and A14, convex surfaces 305c that extend across the second and fourth regions A12 and A14 but not to the first and third regions A11 and A13, and convex surfaces 305c that extend across the third and fourth regions A13 and A14 but not to the first and second regions A11 and A12. The multiple convex surfaces 305c further include convex surfaces 305c that extend across the first, second, and fourth regions A11, A12, and A14 but not across the third region A13, and convex surfaces 305c that extend across the second to fourth regions A12 to A14 but not across the first region A11.

[0183] The first and second ends of each of the multiple convex surfaces 305c are not located inside each of the first to fourth regions A11 to A14, nor between any two adjacent regions among the first to fourth regions A11 to A14.

[0184] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0185] [Fifth Embodiment] Next, a fifth embodiment of the present invention will be described. The magnetic sensor device 100 in this embodiment is composed of a magnetic sensor 101 according to this embodiment and a processor 40 described in the first embodiment. The magnetic sensor 101 may have an external shape similar to that of the first chip 2 or the second chip 3 in the first embodiment.

[0186] The configuration of the magnetic sensor 101 according to this embodiment will be described below with reference to Figures 27 to 30. Figure 27 is a functional block diagram showing the configuration of the magnetic sensor device 100 in this embodiment. Figure 28 is a circuit diagram showing the circuit configuration of the first detection circuit in this embodiment. Figure 29 is a circuit diagram showing the circuit configuration of the second detection circuit in this embodiment. Figure 30 is a circuit diagram showing the circuit configuration of the third detection circuit in this embodiment.

[0187] The magnetic sensor 101 comprises a first detection circuit 110, a second detection circuit 120, and a third detection circuit 130. Each of the first to third detection circuits 110, 120, and 130 includes multiple MR elements.

[0188] The first detection circuit 110 is configured to detect a component of the target magnetic field parallel to the U direction and generate first detection signals S111 and S112 that correspond to this component. The second detection circuit 120 is configured to detect a component of the target magnetic field parallel to the V direction and generate second detection signals S121 and S122 that correspond to this component. The third detection circuit 130 is configured to detect a component of the target magnetic field parallel to the Z direction and generate third detection signals S131 and S132 that correspond to this component.

[0189] The circuit configuration of the first detection circuit 110 is basically the same as the circuit configuration of the first detection circuit 10 in the first embodiment. In Figure 28, the first to fourth resistors of the first detection circuit 110, corresponding to the first to fourth resistors R11, R12, R13, and R14 of the first detection circuit 10, are indicated by the reference numerals R111, R112, R113, and R114, respectively.

[0190] The circuit configuration of the second detection circuit 120 is basically the same as the circuit configuration of the second detection circuit 20 in the first embodiment. In Figure 29, the first to fourth resistors of the second detection circuit 120, corresponding to the first to fourth resistors R21, R22, R23, and R24 of the second detection circuit 20, are indicated by the reference numerals R121, R122, R123, and R124, respectively.

[0191] The circuit configuration of the third detection circuit 130 is basically the same as the circuit configuration of the third detection circuit 30 in the first embodiment. In Figure 30, the first to fourth resistors of the third detection circuit 130, corresponding to the first to fourth resistors R31, R32, R33, and R34 of the third detection circuit 30, are indicated by the reference numerals R131, R132, R133, and R134, respectively.

[0192] The resistive sections R111-R114, R121-R124, and R131-R134 are composed of multiple MR elements. Hereinafter, the multiple MR elements of the magnetic sensor 101 will be denoted by reference numeral 150. The configuration of the MR element 150 may be the same as that of the MR element 50 described in the first embodiment. That is, the MR element 150 has at least a magnetization fixed layer 52, a free layer 54, and a gap layer 53 (see Figure 11).

[0193] In Figures 28 and 29, the filled arrows indicate the direction of magnetization of the magnetization fixed layer 52 of the MR element 150. In the example shown in Figure 28, the direction of magnetization of the magnetization fixed layer 52 in the first and third resistive sections R111 and R113 is in the U direction. The direction of magnetization of the magnetization fixed layer 52 in the second and fourth resistive sections R112 and R114 is in the -U direction. Furthermore, each free layer 54 of the multiple MR elements 150 of the first detection circuit 110 has shape anisotropy such that the easy magnetization axis direction is parallel to the V direction.

[0194] In the example shown in Figure 29, the magnetization direction of the magnetization fixed layer 52 in the first and third resistive sections R121 and R123 is in the V direction. The magnetization direction of the magnetization fixed layer 52 in the second and fourth resistive sections R122 and R124 is in the -V direction. In addition, the free layer 54 of each of the multiple MR elements 150 of the second detection circuit 120 has shape anisotropy such that the easy magnetization axis direction is parallel to the U direction.

[0195] Each free layer 54 of the multiple MR elements 150 in the third detection circuit 130 has shape anisotropy such that the easy magnetization axis direction is parallel to the V direction. The direction of magnetization of the magnetization fixed layer 52 in the third detection circuit 130 will be explained later.

[0196] Next, the specific structure of the magnetic sensor 101 will be described. The magnetic sensor 101 includes a substrate 140 having an upper surface 140a, a first part including a first detection circuit 110, a second part including a second detection circuit 120, and a third part including a third detection circuit 130. The upper surface 140a of the substrate 140 is assumed to be parallel to the XY plane. The first to third parts are formed on the substrate 140. The structure of the first part and the structure of the second part are the same as the structure of the first chip 2 (excluding the substrate 201) described in the first embodiment. The plurality of MR elements 150 included in the first part each have a shape that is long in the V direction. The plurality of MR elements 150 included in the second part each have a shape that is long in the U direction. The first and second parts may or may not include the first coil 70 described in the first embodiment.

[0197] Next, the structure of the third part of the magnetic sensor 101 will be described with reference to Figures 31 to 33. Figure 31 is a plan view showing a part of the magnetic sensor 101. Figure 32 is a perspective view showing multiple MR elements 150 and multiple yokes. Figure 33 is a side view showing multiple MR elements 150 and multiple yokes.

[0198] The structure of the third part is basically the same as that of the first part. The third part further includes a plurality of yokes 151, each made of soft magnetic material. Figure 31 shows the components of the magnetic sensor 101, including the substrate 140, the plurality of MR elements 150, and the plurality of yokes 151.

[0199] Each of the multiple yokes 151 may have a rectangular parallelepiped shape that is elongated in the V direction. Each of the multiple yokes 151 is configured to receive an input magnetic field that includes an input magnetic field component in a direction parallel to the Z direction and generate an output magnetic field. The output magnetic field is U direction The output magnetic field component is in a direction parallel to the input magnetic field component and includes an output magnetic field component that changes according to the input magnetic field component.

[0200] Each of the multiple yokes 151 has a first end face 151a and a second end face 151b located at both ends in a direction parallel to the U direction. In each of the multiple yokes 151, the first end face 151a is located at the -U direction end of the yoke 151, and the second end face 151b is located at the U direction end of the yoke 151. The multiple yokes 151 are also arranged in a direction parallel to the U direction.

[0201] As shown in Figures 31 to 33, in the third section, multiple MR elements 150 are arranged in a row along the first end face 151a, and multiple MR elements 150 are arranged in a row along the second end face 151b. Hereafter, the multiple MR elements 150 arranged along the first end face 151a will be denoted by reference numeral 150A, and the multiple MR elements 150 arranged along the second end face 151b will be denoted by reference numeral 150B. 3 In this section, multiple MR elements 150A and multiple MR elements 150B are arranged so that rows of MR elements 150A and rows of MR elements 150B are arranged alternately in a direction parallel to the U direction. The multiple MR elements 150A and multiple MR elements 150B do not need to overlap with the multiple yokes 151 when viewed from above.

[0202] Although not shown in the diagram, the third part further includes a plurality of first lower electrodes, a plurality of second lower electrodes, a plurality of first upper electrodes, and a plurality of second upper electrodes. The plurality of MR elements 150A are connected in series by the plurality of first lower electrodes and the plurality of first upper electrodes. The plurality of MR elements 150B are connected in series by the plurality of second lower electrodes and the plurality of second upper electrodes.

[0203] Next, with reference to Figure 34, the arrangement of the multiple MR elements 150 of the third detection circuit 130 will be described. Figure 34 is a plan view showing the element arrangement area and multiple yokes. Figure 34 shows the arrangement of the third MR elements 150 of the magnetic sensor 101. 3 This shows the portion. The magnetic sensor 101 has an element placement area A100 for arranging a plurality of MR elements 150 of the third detection circuit 130. The element placement area A100 includes a first area A101 and a second area A102. The first area A101 is the area corresponding to the first and fourth resistors R131 and R134. The second area A102 is the area corresponding to the second and third resistors R132 and R133. The plurality of MR elements 150 of the third detection circuit 130 are arranged in the first and second areas A101 and A102, respectively.

[0204] Each of the first and second regions A101 and A102 has a first and second edge located at both ends in the first reference direction Rx, and a third and fourth edge located at both ends in the second reference direction Ry. Figure 31 shows a portion of the first region A101. In Figure 31, the symbol A101b indicates the second edge of the first region A101, and the symbol A101d indicates the fourth edge of the first region A101.

[0205] The first to fourth edges of the first and second regions A101 and A102, respectively, may have the same characteristics as the first to fourth edges A1a to A1d of the first region A1 in the first embodiment, except for the length of each of the first to fourth edges. However, in the first and second regions A101 and A102, the third reference direction, which is the direction in which each of the third and fourth edges extends, is a direction parallel to one direction between the X direction and the V direction.

[0206] Next, the multiple yokes 151 will be described in detail. When the direction of the input magnetic field component is in the Z direction, the direction of the output magnetic field component received by each of the multiple MR elements 150A is in the U direction, and the direction of the output magnetic field component received by each of the multiple MR elements 150B is in the -U direction. When the direction of the input magnetic field component is in the -Z direction, the direction of the output magnetic field component received by each of the multiple MR elements 150A is in the -U direction, and the direction of the output magnetic field component received by each of the multiple MR elements 150B is in the U direction. Thus, the multiple yokes 151 have a structure that causes the multiple MR elements 150 to detect a component of the target magnetic field in a direction parallel to the U direction. Therefore, the multiple yokes 151 correspond to the "multiple structures" of the present invention.

[0207] The multiple yokes 151 include yokes 151 extending across the first and second regions A101 and A102, yokes 151 extending only into the first region A101, and yokes 151 extending only into the second region A102. Each yoke 151 also has a first end and a second end located at both ends in the longitudinal direction of the yoke 151. The first and second ends of each of the multiple yokes 151 do not exist inside the first and second regions A101 and A102, respectively, nor between the first region A101 and the second region A102.

[0208] The relationship between the yoke 151 and the first to fourth edges of the first and second regions A101 and A102, respectively, may be the same as the relationship between the convex surface 305c and the first to fourth edges A1a to A1d of the first region A1, as described in the first embodiment.

[0209] Next, the first to third detection signals in this embodiment will be described. First, the first detection signal will be briefly described. The manner in which the resistance values ​​of each of the resistors R111 to R114 in the first detection circuit 110 change is the same as the manner in which the resistance values ​​of each of the resistors R11 to R14 in the first detection circuit 10 described in the first embodiment. The first detection circuit 110 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S111, and to generate a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S112.

[0210] Next, the second detection signal will be described with reference to Figure 29. When the intensity of the component of the target magnetic field parallel to the V direction changes, the resistance values ​​of the resistors R121 to R124 of the second detection circuit 120 change such that the resistance values ​​of resistors R121 and R123 increase while the resistance values ​​of resistors R122 and R124 decrease, or the resistance values ​​of resistors R121 and R123 decrease while the resistance values ​​of resistors R122 and R124 increase. As a result, the potentials of the signal output terminals E21 and E22 change. The second detection circuit 120 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S121, and a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S122.

[0211] Next, the third detection signal will be described with reference to Figures 30 to 34. The first resistor R131 is composed of a plurality of MR elements 150A arranged in the first region A101. The second resistor R132 is composed of a plurality of MR elements 150A arranged in the second region A102. The third resistor R133 is composed of a plurality of MR elements 150B arranged in the second region A102. The fourth resistor R134 is composed of a plurality of MR elements 150B arranged in the first region A101.

[0212] The direction of magnetization of the magnetization fixed layer 52 in each of the first and fourth resistive sections R131 and R134 is in the U direction. The direction of magnetization of the magnetization fixed layer 52 in each of the second and third resistive sections R132 and R133 is in the -U direction.

[0213] When the input magnetic field component is in the Z direction, the output magnetic field component received by the multiple MR elements 150A in the first and second resistors R131 and R132 is in the U direction, and the output magnetic field component received by the multiple MR elements 150B in the third and fourth resistors R133 and R134 is in the -U direction. In this case, compared to the state where there is no output magnetic field component, the resistance values ​​of the multiple MR elements 150A in the first resistor R131 and the multiple MR elements 150B in the third resistor R133 decrease, and the resistance values ​​of the first and third resistors R131 and R133 also decrease. Furthermore, compared to the state where there is no output magnetic field component, the resistance values ​​of the multiple MR elements 150B in the second resistor R132 and the multiple MR elements 150B in the fourth resistor R134 increase, and the resistance values ​​of the second and fourth resistors R132 and R134 also increase.

[0214] When the direction of the input magnetic field component is in the -Z direction, the direction of the output magnetic field component and the change in the resistance values ​​of the first to fourth resistors R131 to R134 are reversed compared to the case where the direction of the input magnetic field component is in the Z direction.

[0215] Thus, when the direction and intensity of the input magnetic field component change, the resistance values ​​of the resistors R131 to R134 of the third detection circuit 130 change such that the resistance values ​​of resistors R131 and R133 increase while the resistance values ​​of resistors R132 and R134 decrease, or the resistance values ​​of resistors R131 and R133 decrease while the resistance values ​​of resistors R132 and R134 increase. As a result, the potentials of the signal output terminals E31 and E32 change. The third detection circuit 130 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S131, and a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S132.

[0216] Next, the operation of the processor 40 in this embodiment will be described. In this embodiment, the processor 40 is configured to generate a first detection value Su based on the first detection signals S111 and S112, a second detection value Sv based on the second detection signals S121 and S122, and a third detection value Sz based on the third detection signals S131 and S132.

[0217] The following describes the methods for generating the first to third detection values ​​Su, Sv, and Sz. The processor 40 generates a first detection value Su by performing a calculation that includes determining the difference S111-S112 between the first detection signal S111 and the first detection signal S112. The first detection value Su may be the difference S111-S112 itself, or it may be the difference S111-S112 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0218] Furthermore, the processor 40 generates a second detected value Sv by performing a calculation that includes determining the difference S121-S122 between the second detected signal S121 and the second detected signal S122. The second detected value Sv may be the difference S121-S122 itself, or it may be the difference S121-S122 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0219] Furthermore, the processor 40 generates a third detection value Sz by performing a calculation that includes determining the difference S131-S132 between the third detection signal S131 and the third detection signal S132. The third detection value Sz may be the difference S131-S132 itself, or it may be the difference S131-S132 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0220] Furthermore, among the features of the first embodiment described with reference to Figures 12 to 14 and Figures 16 to 19, the features relating to the multiple convex surfaces 305c also apply to the multiple yokes 151. The other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0221] [Sixth Embodiment] Next, a sixth embodiment of the present invention will be described. The magnetic sensor device 100 in this embodiment includes a first chip 8 instead of the first chip 2 in the first embodiment. The magnetic sensor 1 according to this embodiment is composed of a first chip 8 and a second chip 3. Although not shown, the first chip 8 has the same external shape as the second chip 3. The first chip 8 is mounted on the reference plane 4a of the support 4 in the same orientation as the second chip 3, with the lower surface of the first chip 8 facing the reference plane 4a of the support 4 (see Figures 1 and 2).

[0222] The configuration of the second chip 3 in this embodiment is the same as in the first embodiment. For convenience, in this embodiment, the two detection circuits included in the second chip 3 are referred to as the third detection circuit 20 and the fourth detection circuit 30. The configurations of the third and fourth detection circuits 20 and 30 in this embodiment are the same as the configurations of the second and third detection circuits 20 and 30 in the first embodiment, respectively.

[0223] Furthermore, in this embodiment, for convenience, the two detection signals generated by the third detection circuit 20 are referred to as the third detection signals S21 and S22, and the two detection signals generated by the fourth detection circuit 30 are referred to as the fourth detection signals S31 and S32. The third detection signals S21 and S22 and the fourth detection signals S31 and S32 in this embodiment are the same as the second detection signals S21 and S22 and the third detection signals S31 and S32 in the first embodiment, respectively.

[0224] Furthermore, in this embodiment, for convenience, the plurality of MR elements 50 constituting the third detection circuit 20 are referred to as the plurality of third MR elements 50B, and the plurality of MR elements 50 constituting the fourth detection circuit 30 are referred to as the plurality of fourth MR elements 50C. The plurality of third MR elements 50B and the plurality of fourth MR elements 50C in this embodiment are the same as the plurality of second MR elements 50B and the plurality of third MR elements 50C in the first embodiment, respectively.

[0225] The magnetic sensor 1 according to this embodiment includes third and fourth detection circuits 20 and 30. Furthermore, the magnetic sensor 1 according to this embodiment includes a first detection circuit 240, a second detection circuit 250, and a first coil 280 instead of the first detection circuit 10 and first coil 70 in the first embodiment.

[0226] The first and second detection circuits 240 and 250 will be described below with reference to Figures 35 to 39. Figure 35 is a functional block diagram showing the configuration of the magnetic sensor device 100. Figure 36 is a circuit diagram showing the circuit configuration of the first detection circuit 240. Figure 37 is a circuit diagram showing the circuit configuration of the second detection circuit 250. Figure 38 is a plan view showing a part of the first chip 8. Figure 39 is a cross-sectional view showing a part of the first chip 8.

[0227] Here, as shown in Figure 39, the W4 and W5 directions are defined as follows: The W4 direction is the direction of rotation from the U direction toward the -Z direction. The W5 direction is the direction of rotation from the U direction toward the Z direction. In this embodiment, the W4 direction is specifically defined as U The direction is defined as the direction obtained by rotating γ from the U direction toward the -Z direction, and the W5 direction is defined as the direction obtained by rotating γ from the U direction toward the Z direction. Note that γ is an angle greater than 0° and less than 90°. γ may be equal to β as described in the first embodiment. The direction opposite to the W4 direction is defined as the -W4 direction, and the direction opposite to the W5 direction is defined as the -W5 direction. The W4 direction and the W5 direction are perpendicular to the V direction, respectively.

[0228] The first detection circuit 240 is configured to detect a component of the target magnetic field parallel to the W4 direction and generate first detection signals S41 and S42 that correspond to this component. The second detection circuit 250 is configured to detect a component of the target magnetic field parallel to the W5 direction and generate second detection signals S51 and S52 that correspond to this component.

[0229] As shown in Figure 36, the first detection circuit 240 includes a power supply terminal V4, a ground terminal G4, signal output terminals E41 and E42, a first resistor R41, a second resistor R42, a third resistor R43, and a fourth resistor R44. The multiple MR elements of the first detection circuit 240 constitute the first to fourth resistors R41, R42, R43, and R44.

[0230] The first resistor R41 is located between the power supply terminal V4 and the signal output terminal E41. The second resistor R42 is located between the signal output terminal E41 and the ground terminal G4. The third resistor R43 is located between the signal output terminal E42 and the ground terminal G4. The fourth resistor R44 is located between the power supply terminal V4 and the signal output terminal E42.

[0231] As shown in Figure 37, the second detection circuit 250 includes a power supply terminal V5, a ground terminal G5, signal output terminals E51 and E52, a first resistor R51, a second resistor R52, a third resistor R53, and a fourth resistor R54. The multiple MR elements of the second detection circuit 250 constitute the first to fourth resistors R51, R52, R53, and R54.

[0232] The first resistor R51 is located between the power supply terminal V5 and the signal output terminal E51. The second resistor R52 is located between the signal output terminal E51 and the ground terminal G5. The third resistor R53 is located between the signal output terminal E52 and the ground terminal G5. The fourth resistor R54 is located between the power supply terminal V5 and the signal output terminal E52.

[0233] A predetermined voltage or current is applied to each of the power supply terminals V4 and V5. Each of the ground terminals G4 and G5 is connected to ground.

[0234] Hereinafter, the multiple MR elements of the first detection circuit 240 will be referred to as the multiple first MR elements 50D, and the multiple MR elements of the second detection circuit 250 will be referred to as the multiple second MR elements 50E. Since the first and second detection circuits 240 and 250 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes the multiple first MR elements 50D and the multiple second MR elements 50E. The configuration of each of the multiple first MR elements 50D and the multiple second MR elements 50E is the same as the configuration of the MR element 50 described in the first embodiment.

[0235] In Figures 36 and 37, the filled-in arrows represent the direction of magnetization of the magnetization fixed layer 52 (see Figure 11) of the MR element 50. The open-circle arrows represent the direction of magnetization of the free layer 54 (see Figure 11) of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0236] In the example shown in Figure 36, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R41 and R43 is in the W4 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R42 and R44 is in the -W4 direction. Furthermore, each free layer 54 of the multiple first MR elements 50D has shape anisotropy such that the easy magnetization axis direction is parallel to the V direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R41 and R42 is in the V direction when no target magnetic field is applied to the first MR element 50D. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R43 and R44 is in the -V direction.

[0237] In the example shown in Figure 37, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R51 and R53 is in the W5 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R52 and R54 is in the -W5 direction. Furthermore, each free layer 54 of the multiple second MR elements 50E has shape anisotropy such that the easy magnetization axis direction is parallel to the V direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R51 and R52 is in the V direction when no target magnetic field is applied to the second MR element 50E. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R53 and R54 is in the -V direction.

[0238] In this embodiment, the magnetic field generator includes a first coil 280 that applies a magnetic field in a predetermined direction to the free layer 54 of each of the multiple first MR elements 50D and multiple second MR elements 50E, instead of the first coil 70 in the first embodiment. The first chip 8 also includes the first coil 280.

[0239] The specific structure of the first chip 8 will be described in detail below. Figure 39 shows a part of the cross-section at the position indicated by line 39-39 in Figure 38. The first chip 8 includes a substrate 321 having an upper surface 321a, insulating layers 322, 323, 324, 325, 327, 328, 329, 330, a plurality of lower electrodes 61D, a plurality of lower electrodes 61E, a plurality of upper electrodes 62D, a plurality of upper electrodes 62E, a plurality of lower coil elements 281, and a plurality of upper coil elements 282. In Figure 39, the insulating layer 325, a plurality of first MR elements 50D, a plurality of second MR elements 50E, and a plurality of upper coil elements 282 are shown among the components of the first chip 8.

[0240] Furthermore, the insulating layer 325 has a plurality of convex surfaces 325c. Each of the plurality of convex surfaces 325c includes a first inclined surface 325a and a second inclined surface 325b.

[0241] The structure of the first chip 8 may be symmetrical to the structure of the second chip 3 with respect to the YZ plane. In this case, replacing the components of the second chip 3 with the components of the first chip 8 will result in a description of the structure of the first chip 8. Specifically, the components of the second chip 3 are replaced with the components of the first chip 8 as follows: The multiple third MR elements 50B and multiple fourth MR elements 50C of the second chip 3 (multiple second MR elements 50B and multiple third MR elements 50C in the first embodiment) are replaced with multiple first MR elements 50D and multiple second MR elements 50E, respectively. Multiple lower electrodes 61 of the second chip 3 B and multiple lower electrodes 61 C These are replaced by multiple lower electrodes 61D and multiple lower electrodes 61E, respectively. Multiple upper electrodes 62 of the second chip 3 B and multiple upper electrodes 62 C These are replaced by multiple upper electrodes 62D and multiple upper electrodes 62E, respectively. Multiple lower coil elements 81 and multiple upper coil elements 82 of the second chip 3 are replaced by multiple lower coil elements 281 and multiple upper coil elements 282, respectively. Insulating layers 302-305 and 307-310 of the second chip 3 are replaced by insulating layers 322-325 and 327-330, respectively.

[0242] Furthermore, the multiple convex surfaces 305c, multiple first inclined surfaces 305a, and multiple second inclined surfaces 305b of the second chip 3 are replaced by multiple convex surfaces 325c, multiple first inclined surfaces 325a, and multiple second inclined surfaces 325b, respectively. In the first embodiment, the characteristics of the multiple convex surfaces 305c, multiple first inclined surfaces 305a, and multiple second inclined surfaces 305b are described using the U direction, V direction, -V direction, W1 direction, W2 direction, and VZ section. As described above, when the components of the second chip 3 are replaced with the components of the first chip 8, the U direction, V direction, -V direction, W1 direction, W2 direction, and VZ section are replaced by the V direction, U direction, -U direction, W4 direction, W5 direction, and UZ section, respectively.

[0243] Next, the arrangement of the multiple first MR elements 50D and the multiple second MR elements 50E will be described. The first chip 8 has an element arrangement region for arranging the multiple first MR elements 50D and the multiple second MR elements 50E. The element arrangement region of the first chip 8 includes a first region corresponding to the first resistors R41 and R51, a second region corresponding to the second resistors R42 and R52, a third region corresponding to the third resistors R43 and R53, and a fourth region corresponding to the fourth resistors R44 and R54.

[0244] The arrangement of the first to fourth regions of the element placement area of ​​the first chip 8 may be the same as the arrangement of the first to fourth regions A1 to A4 of the element placement area A0 of the second chip 3 shown in Figure 12 in the first embodiment. Alternatively, the arrangement of the first to fourth regions of the element placement area of ​​the first chip 8 may be symmetrical with respect to the arrangement of the first to fourth regions A1 to A4 of the element placement area A0 of the second chip 3, with respect to the YZ plane.

[0245] Furthermore, the shapes of the first to fourth regions of the element arrangement region of the first chip 8 may be symmetrical with respect to the shapes of the first to fourth regions A1 to A4 of the element arrangement region A0 of the second chip 3, with respect to the YZ plane.

[0246] The arrangement of the multiple first MR elements 50D and the multiple second MR elements 50E in each of the first to fourth regions of the element arrangement area of ​​the first chip 8 may be symmetrical with respect to the arrangement of the multiple third MR elements 50B and the multiple fourth MR elements 50C (multiple second MR elements 50B and multiple third MR elements 50C in the first embodiment) in each of the first to fourth regions A1 to A4 of the element arrangement area A0 of the second chip 3, with respect to the YZ plane.

[0247] Next, the first detection signals S41 and S42 will be described with reference to Figure 36. When the intensity of the component of the target magnetic field parallel to the W4 direction changes, the resistance values ​​of the resistors R41 to R44 of the first detection circuit 240 change such that the resistance values ​​of resistors R41 and R43 increase while the resistance values ​​of resistors R42 and R44 decrease, or the resistance values ​​of resistors R41 and R43 decrease while the resistance values ​​of resistors R42 and R44 increase. As a result, the potentials of the signal output terminals E41 and E42 change. The first detection circuit 240 is configured to generate a signal corresponding to the potential of the signal output terminal E41 as the first detection signal S41, and a signal corresponding to the potential of the signal output terminal E42 as the first detection signal S42.

[0248] Next, the second detection signals S51 and S52 will be described with reference to Figure 37. When the intensity of the component of the target magnetic field parallel to the W5 direction changes, the resistance values ​​of each of the resistors R51 to R54 of the second detection circuit 250 change such that the resistance values ​​of resistors R51 and R53 increase while the resistance values ​​of resistors R52 and R54 decrease, or the resistance values ​​of resistors R51 and R53 decrease while the resistance values ​​of resistors R52 and R54 increase. As a result, the potentials of the signal output terminals E51 and E52 change. The second detection circuit 250 is configured to generate a signal corresponding to the potential of the signal output terminal E51 as the second detection signal S51, and a signal corresponding to the potential of the signal output terminal E52 as the second detection signal S52.

[0249] Next, the operation of the processor 40 in this embodiment will be described. In this embodiment, the processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S41, S42 and the second detection signals S51, S52. The first detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the U direction. The second detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the first detection value will be represented by the symbol Su1 and the second detection value will be represented by the symbol Sz1.

[0250] The processor 40 is further configured to generate a third detection value and a fourth detection value based on the third detection signals S21, S22 and the fourth detection signals S31, S32. The third detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the V direction. The fourth detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the third detection value will be denoted by the symbol Sv1 and the fourth detection value will be denoted by the symbol Sz2.

[0251] The method for generating the first and second detection values ​​Su1 and Sz1 is the same as the method for generating the second and third detection values ​​Sv and Sz described in the first embodiment. By replacing Sv and Sz with Su1 and Sz1, respectively, in the description of the method for generating the second and third detection values ​​Sv and Sz, the description becomes the same as the description of the method for generating the first and second detection values ​​Su1 and Sz1.

[0252] The method for generating the third and fourth detection values ​​Sv1 and Sz2 is the same as the method for generating the second and third detection values ​​Sv and Sz described in the first embodiment. By replacing Sv and Sz with Sv1 and Sz2, respectively, in the description of the method for generating the second and third detection values ​​Sv and Sz, the description becomes the method for generating the third and fourth detection values ​​Sv1 and Sz2.

[0253] In this embodiment, the processor 40 is the 3 and the 4 The processor may perform an operation to calculate the average of the detected values ​​Sz1 and Sz2. In this case, the processor 40 may generate the value obtained by the operation as a detected value corresponding to the component in the direction parallel to the Z direction of the target magnetic field.

[0254] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0255] It should be noted that the present invention is not limited to the embodiments described above, and various modifications are possible. For example, the magnetic sensor of the present invention may be an integrated unit of multiple chips.

[0256] As described above, the magnetic sensor of the present invention includes a plurality of resistance portions formed by a plurality of magnetoresistive effect elements, and a plurality of structures each having a structure for detecting a specific component of a target magnetic field with respect to each of the plurality of magnetoresistive effect elements. The plurality of magnetoresistive effect elements are arranged by being divided into a plurality of regions corresponding to the plurality of resistance portions. The plurality of regions are arranged so as to be aligned along a first reference direction. Each of the plurality of regions has a first edge and a second edge located at both ends in the first reference direction, and a third edge and a fourth edge located at both ends in a second reference direction orthogonal to the first reference direction. Each of the first edge and the second edge extends along the second reference direction. Each of the plurality of structures extends in a direction intersecting each of the first reference direction and the second reference direction. The angle formed by each of the plurality of structures with respect to the first edge or the second edge is larger than the angle formed by each of the plurality of structures with respect to the third edge or the fourth edge. The plurality of structures include a structure that extends across at least two of the plurality of regions.

[0257] In the magnetic sensor of the present invention, each of the third edge and the fourth edge may extend in a direction intersecting each of the first reference direction and the second reference direction. The angle formed by the first edge and the third edge and the angle formed by the second edge and the fourth edge may both be obtuse angles, and the angle formed by the first edge and the fourth edge and the angle formed by the second edge and the third edge may both be acute angles.

[0258] Also, in the magnetic sensor of the present invention, the plurality of magnetoresistive effect elements may be arranged such that a plurality of them are aligned along the first reference direction and a plurality of them are aligned along each of the plurality of structures.

[0259] Also, in the magnetic sensor of the present invention, the plurality of structures may each include a plurality of yokes made of a soft magnetic material.

[0260] Further, in the magnetic sensor of the present invention, the plurality of structures may each include a plurality of inclined surfaces inclined with respect to a reference plane parallel to the first reference direction and the second reference direction. A plurality of magnetoresistive elements may be arranged in plural numbers on each of the plurality of inclined surfaces.

[0261] Further, in the magnetic sensor of the present invention, the element arrangement region, which is a region including a plurality of regions, may have a dimension in the first reference direction larger than the dimension in the second reference direction.

[0262] Further, in the magnetic sensor of the present invention, each of the plurality of regions may have a dimension in the first reference direction smaller than the dimension in the second reference direction.

[0263] Further, in the magnetic sensor of the present invention, the plurality of regions may include a first specific region and a second specific region. The center of gravity of the first specific region and the center of gravity of the second specific region may be offset from each other in the second reference direction. The center of gravity of the first specific region and the center of gravity of the second specific region may be offset by the interval in the second reference direction between two adjacent structures among the plurality of structures.

[0264] Furthermore, the magnetic sensor of the present invention may further include a power terminal, a ground terminal, a first output terminal, and a second output terminal. The plurality of resistive sections may include a first resistive section provided between the power terminal and the first output terminal, a second resistive section provided between the ground terminal and the first output terminal, a third resistive section provided between the ground terminal and the second output terminal, and a fourth resistive section provided between the power terminal and the second output terminal. The plurality of regions may include a first region, a second region, a third region, and a fourth region. The plurality of magnetoresistive elements may include a plurality of first magnetoresistive elements arranged in the first region, a plurality of second magnetoresistive elements arranged in the second region, a plurality of third magnetoresistive elements arranged in the third region, and a plurality of fourth magnetoresistive elements arranged in the fourth region. Multiple first magnetoresistive elements, multiple second magnetoresistive elements, multiple third magnetoresistive elements, and multiple fourth magnetoresistive elements may each constitute a first resistive section, a second resistive section, a third resistive section, and a fourth resistive section, respectively. [Explanation of symbols]

[0265] 1…Magnetic sensor, 2…First chip, 3…Second chip, 4…Support, 6,7…Adhesive, 10…First detection circuit, 20…Second detection circuit, 30…Third detection circuit, 40…Processor, 50…MR element, 50A…First MR element, 50B…Second MR element, 50C…Third MR element, 51…Antiferromagnetic layer, 52…Magnetization fixed layer, 53…Gap layer, 54…Free layer, 61,61A,61B,61C…Bottom electrode, 62,6 2A, 62B, 62C... Upper electrode, 70... First coil, 71... Lower coil element, 72... Upper coil element, 80... Second coil, 81... Lower coil element, 82... Upper coil element, 100... Magnetic sensor device, 201, 301... Substrate, 201a, 301a... Top surface, 202~204, 207~210, 302~305, 307~310... Insulating layer, 305a... First inclined surface, 305b... Second inclined surface, 305c... Convex surface.

Claims

1. Multiple resistive sections composed of multiple magnetoresistive elements, Equipped with multiple inclined surfaces, The plurality of magnetoresistive elements are divided and arranged into a plurality of regions corresponding to the plurality of resistive parts, The aforementioned multiple regions are arranged so as to be aligned along the first reference direction. Each of the plurality of regions has a first edge and a second edge located at both ends in the first reference direction, and a third edge and a fourth edge located at both ends in the second reference direction perpendicular to the first reference direction. Each of the first edge and the second edge extends along the second reference direction, Each of the plurality of inclined surfaces extends in a direction intersecting the first reference direction and the second reference direction, and is inclined with respect to a reference plane parallel to the first reference direction and the second reference direction in order to allow the plurality of magnetoresistive elements to detect a specific component of the target magnetic field. The aforementioned specific component is a component in a direction inclined with respect to the reference plane, The plurality of magnetoresistive elements are arranged in multiples on each of the plurality of inclined surfaces, The angle that each of the plurality of inclined surfaces makes with respect to the first edge or the second edge is greater than the angle that each of the plurality of inclined surfaces makes with respect to the third edge or the fourth edge. The magnetic sensor is characterized in that the plurality of inclined surfaces include inclined surfaces that extend across at least two of the plurality of regions.

2. The magnetic sensor according to claim 1, characterized in that each of the third edge and the fourth edge extends in a direction intersecting each of the first reference direction and the second reference direction.

3. The magnetic sensor according to claim 2, characterized in that the angle between the first edge and the third edge and the angle between the second edge and the fourth edge are both obtuse angles, and the angle between the first edge and the fourth edge and the angle between the second edge and the third edge are both acute angles.

4. A plurality of resistive sections composed of a plurality of magnetoresistive elements, Each comprises multiple yokes made of soft magnetic material, The plurality of magnetoresistive elements are divided and arranged into a plurality of regions corresponding to the plurality of resistive parts, The aforementioned multiple regions are arranged so as to be aligned along the first reference direction. Each of the plurality of regions has a first edge and a second edge located at both ends in the first reference direction, and a third edge and a fourth edge located at both ends in the second reference direction perpendicular to the first reference direction. Each of the first edge and the second edge extends along the second reference direction, Each of the plurality of yokes extends in a direction intersecting each of the first and second reference directions, and has a rectangular parallelepiped shape that is long in a direction parallel to a reference plane parallel to the first and second reference directions, in order to cause the plurality of magnetoresistive elements to detect a specific component of the target magnetic field, and receives an input magnetic field that includes an input magnetic field component in a direction perpendicular to the reference plane to generate an output magnetic field, The output magnetic field includes an output magnetic field component in a direction parallel to the reference plane and an output magnetic field component that changes in accordance with the input magnetic field component. The aforementioned specific component is the output magnetic field component, The plurality of magnetoresistive elements are arranged in groups of multiples along the first reference direction and in groups of multiples along each of the plurality of yokes. The angle that each of the plurality of yokes makes with respect to the first edge or the second edge is greater than the angle that each of the plurality of yokes makes with respect to the third edge or the fourth edge. The plurality of yokes include a yoke that extends over at least two of the plurality of regions, Each of the third and fourth edges extends in a direction intersecting each of the first and second reference directions, A magnetic sensor characterized in that the angle between the first edge and the third edge and the angle between the second edge and the fourth edge are both obtuse angles, and the angle between the first edge and the fourth edge and the angle between the second edge and the third edge are both acute angles.

5. The element arrangement region, which includes the plurality of regions, is characterized in that the dimension in the first reference direction is larger than the dimension in the second reference direction, as described in claim 1 or 4.

6. The magnetic sensor according to claim 1 or 4, characterized in that each of the plurality of regions has a dimension in the first reference direction that is smaller than the dimension in the second reference direction.

7. The aforementioned plurality of regions include a first specific region and a second specific region, The magnetic sensor according to claim 1, characterized in that the center of gravity of the first specific region and the center of gravity of the second specific region are offset from each other in the second reference direction.

8. The magnetic sensor according to claim 7, characterized in that the center of gravity of the first specific region and the center of gravity of the second specific region are offset by the distance in the second reference direction between two adjacent inclined surfaces among the plurality of inclined surfaces.

9. The plurality of regions include a first specific region and a second specific region, The magnetic sensor according to claim 4, characterized in that the center of gravity of the first specific region and the center of gravity of the second specific region are offset from each other in the second reference direction.

10. The magnetic sensor according to claim 9, characterized in that the center of gravity of the first specific region and the center of gravity of the second specific region are offset by the distance between two adjacent yokes in the second reference direction among the plurality of yokes.

11. Furthermore, the power supply terminal and At the edge of the field, The first output terminal and It comprises a second output terminal, The plurality of resistors include a first resistor provided between the power supply terminal and the first output terminal, a second resistor provided between the ground terminal and the first output terminal, a third resistor provided between the ground terminal and the second output terminal, and a fourth resistor provided between the power supply terminal and the second output terminal. The aforementioned plurality of regions include a first region, a second region, a third region, and a fourth region. The plurality of magnetoresistive elements include a plurality of first magnetoresistive elements arranged in the first region, a plurality of second magnetoresistive elements arranged in the second region, a plurality of third magnetoresistive elements arranged in the third region, and a plurality of fourth magnetoresistive elements arranged in the fourth region. The magnetic sensor according to claim 1 or 4, characterized in that the plurality of first magnetoresistive elements, the plurality of second magnetoresistive elements, the plurality of third magnetoresistive elements, and the plurality of fourth magnetoresistive elements each constitute the first resistive portion, the second resistive portion, the third resistive portion, and the fourth resistive portion, respectively.

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