Etching method and plasma processing apparatus

The etching method using hydrogen fluoride and phosphorus-containing gases improves silicon-containing film selectivity and mask protection, addressing inefficiencies in plasma etching processes.

JP7864883B2Active Publication Date: 2026-05-25TOKYO ELECTRON LTD
View PDF 10 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
TOKYO ELECTRON LTD
Filing Date
2025-02-19
Publication Date
2026-05-25

AI Technical Summary

Technical Problem

Existing plasma etching methods struggle to achieve high selectivity of silicon-containing films relative to the etching of a mask, leading to inefficiencies in manufacturing processes.

Method used

An etching method using a processing gas comprising hydrogen fluoride gas and a phosphorus-containing gas, with optional carbon-containing and amine-based gases, to enhance the selectivity of silicon-containing film etching while protecting the mask.

Benefits of technology

The method improves the etching selectivity of silicon-containing films, allowing for higher etching rates and reduced mask degradation, even in high aspect ratio structures, thereby enhancing manufacturing efficiency.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 0007864883000001
    Figure 0007864883000001
  • Figure 0007864883000002
    Figure 0007864883000002
  • Figure 0007864883000003
    Figure 0007864883000003
Patent Text Reader

Abstract

To provide a technology to improve the selectivity of etching of silicon-containing film to etching of mask in plasma etching.SOLUTION: The disclosed etching method includes the process (a) of preparing a substrate in a chamber of a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes the process (b) of etching the silicon-containing film by chemical species from plasma generated from a processing gas in the chamber. The process gas includes hydrogen fluoride gas and phosphorus-containing gas.SELECTED DRAWING: Figure 1
Need to check novelty before this filing date? Find Prior Art