Laminate, release agent composition, and method for manufacturing a processed semiconductor substrate

Abstract

This laminate includes a semiconductor substrate, a light-transmissive support substrate, and an adhesive layer and a release layer provided between the semiconductor substrate and the support substrate, wherein: light emitted from the support substrate side is absorbed by the release layer and then used to cause the semiconductor substrate and the support substrate to be peeled off; the release layer is a layer formed from a release agent composition; and the release agent component has a structure that absorbs the light and contains a compound having a first structure which contributes to the semiconductor substrate and the support substrate being easier to peel off by absorbing the light, and which has two or more aromatic rings constituting a π electron conjugated system, and having a siloxane structure serving as a second structure.

Claims

1. Semiconductor substrate and A light-transmitting support substrate, The semiconductor substrate and the support substrate are provided with an adhesive layer and a release layer, A laminate used in which the semiconductor substrate and the support substrate are separated after the peeling layer absorbs light irradiated from the support substrate side, The aforementioned release layer is a layer formed from a release agent composition, A laminate comprising a compound having a first structure having two or more aromatic rings constituting a π-electron conjugated system, and a siloxane structure as a second structure, wherein the release agent composition has a structure that absorbs light, thereby contributing to the easier separation of the semiconductor substrate and the support substrate by absorbing light.

2. The laminate according to claim 1, wherein the first structure has a structure selected from the group consisting of a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, and a phenylbenzotriazole structure.

3. The laminate according to claim 1 or 2, wherein the first structure is a structure represented by any of the following formulas (1) to (7). 【Chemistry 1】 (In formulas (1) to (7), R １ ~R １３ Each of these independently represents a halogen atom or a monovalent group. X is a single bond, -O-, -CO-, -NR ３１ - (R ３１ ) represents a hydrogen atom, an optionally substituted alkyl group, or an optionally substituted aryl group. ２ It represents - or -N=N-. Y １ represents a single bond or -CO-. When Y １ is a single bond, Y ２ is -O-, -CO-, or -NR ３２ -(R ３２ represents a hydrogen atom, an optionally substituted alkyl group, or an optionally substituted aryl group.). When Y １ is -CO-, Y ２ represents -CO-. n1 is an integer between 0 and 4. n² is an integer between 0 and 5. n3 is an integer between 0 and 3. n4 is an integer between 0 and 4. n5 is an integer between 0 and 4. n6 is an integer between 0 and 5. n7 is an integer between 0 and 4. n8 is an integer between 0 and 4. n9 is an integer between 0 and 7. n10 is an integer between 0 and 9. n11 is an integer between 0 and 9. n12 is an integer between 0 and 4. n13 is an integer between 0 and 4. * represents a coupling. R １ ~R １３ If each of them is multiple, then multiple R １ ~R １３ They may be the same or they may be different.

4. The laminate according to any one of claims 1 to 3, wherein the first structure has at least one hydroxyl group.

5. The second structure is SiO ２ Siloxane units (Q units) represented by R １０１ R １０２ R １０３ SiO １／２ Siloxane units (M units) expressed as R １０４ R １０５ SiO ２／２ Siloxane units (D units) represented by R １０６ SiO ３／２ Siloxane units (T units) represented by (R １０１ ~R １０６ The laminate according to any one of claims 1 to 4, comprising at least one selected from the group consisting of (each independently representing a hydrogen atom or a monovalent group bonded to Si, or a single bond or linking group bonding Si to the first structure).

6. The laminate according to claim 5, wherein the first structure is bonded to any of the M units, D units, and T units of Si via single bonds or linking groups.

7. The first structure is bonded to any of the M unit, D unit, and T unit Si via a linking group, The laminate according to claim 6, wherein the linking group is selected from the group consisting of an alkylene group having 1 to 10 carbon atoms, an ester bond, an ether bond, an amide bond, a urethane bond, a urea bond, and two or more combinations thereof.

8. The laminate according to any one of claims 1 to 7, wherein the adhesive layer is a layer formed from an adhesive composition containing a compound having a siloxane structure.

9. The laminate according to claim 8, wherein the adhesive composition contains a curing component (A).

10. The laminate according to claim 9, wherein component (A) is a component that hardens by a hydrosilylation reaction.

11. The aforementioned component (A) is A polyorganosiloxane (a1) having alkenyl groups with 2 to 40 carbon atoms bonded to a silicon atom, A polyorganosiloxane (a2) having a Si-H group, Platinum group metal catalyst (A2), A laminate according to claim 9 or 10, comprising the above.

12. A release agent composition for forming the release layer of a laminate comprising a semiconductor substrate, a support substrate, and an adhesive layer and a release layer provided between the semiconductor substrate and the support substrate, wherein the release layer absorbs light irradiated from the support substrate side and the semiconductor substrate and the support substrate are separated. A stripping agent composition comprising a first structure having two or more aromatic rings constituting a π-electron conjugated system, which is a light-absorbing structure that contributes to making the semiconductor substrate and the support substrate easier to peel off by absorbing the light, and a compound having a siloxane structure as a second structure.

13. The stripping agent composition according to claim 12, wherein the first structure has a structure selected from the group consisting of a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, and a phenylbenzotriazole structure.

14. The stripping agent composition according to claim 12 or 13, wherein the first structure is a structure represented by any of the following formulas (1) to (7). 【Chemistry 2】 (In formulas (1) to (7), R １ ~R １３ Each of these independently represents a halogen atom or a monovalent group. X is a single bond, -O-, -CO-, -NR ３１ - (R ３１ ) represents a hydrogen atom, an optionally substituted alkyl group, or an optionally substituted aryl group. ２ It represents - or -N=N-. Y １ This represents a single bond or -CO-. １ When it is a single bond, Y ２ is -O-, -CO-, or -NR ３２ - (R ３２ Y represents a hydrogen atom, an optionally substituted alkyl group, or an optionally substituted aryl group. １ When is -CO-, Y ２ This represents -CO-. n1 is an integer between 0 and 4. n² is an integer between 0 and 5. n3 is an integer between 0 and 3. n4 is an integer between 0 and 4. n5 is an integer between 0 and 4. n6 is an integer between 0 and 5. n7 is an integer between 0 and 4. n8 is an integer between 0 and 4. n9 is an integer between 0 and 7. n10 is an integer between 0 and 9. n11 is an integer between 0 and 9. n12 is an integer between 0 and 4. n13 is an integer between 0 and 4. * represents a coupling. R １ ~R １３ If each of them is multiple, then multiple R １ ~R １３ They may be the same or they may be different.

15. The stripping agent composition according to any one of claims 12 to 14, wherein the first structure has at least one hydroxyl group.

16. The second structure is SiO ２ Siloxane units (Q units) represented by R １０１ R １０２ R １０３ SiO １／２ Siloxane units (M units) expressed as R １０４ R １０５ SiO ２／２ Siloxane units (D units) represented by R １０６ SiO ３／２ Siloxane units (T units) represented by (R １０１ ~R １０６ The stripping agent composition according to any one of claims 12 to 15, comprising at least one selected from the group consisting of (each independently representing a hydrogen atom or a monovalent group bonded to Si, or a single bond or linking group bonding Si to the first structure).

17. The stripping agent composition according to claim 16, wherein the second structure is bonded to any Si of the M unit, the D unit, and the T unit via a single bond or a linking group.

18. The second structure is bonded to any of the M unit, D unit, and T unit Si via a linking group. The release agent composition according to claim 17, wherein the linking group is selected from the group consisting of an alkylene group having 1 to 10 carbon atoms, an ester bond, an ether bond, an amide bond, a urethane bond, a urea bond, and two or more combinations thereof.

19. A method for manufacturing a processed semiconductor substrate, A first step in which the semiconductor substrate of the laminate according to any one of claims 1 to 11 is processed, A second step involves separating the semiconductor substrate processed in the first step from the support substrate, The separated semiconductor substrate is cleaned with a cleaning agent composition in a third step. A method for manufacturing a processed semiconductor substrate, including the method described above.

20. The method for manufacturing a processed semiconductor substrate according to claim 19, wherein the second step includes a step of irradiating the peeling layer with light.

21. The method for manufacturing a processed semiconductor substrate according to claim 19 or 20, wherein the cleaning agent composition comprises a quaternary ammonium salt and a solvent.

22. The method for manufacturing a processed semiconductor substrate according to claim 21, wherein the quaternary ammonium salt is a halogen-containing quaternary ammonium salt.

23. The method for manufacturing a processed semiconductor substrate according to claim 22, wherein the halogen-containing quaternary ammonium salt is a fluorine-containing quaternary ammonium salt.

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