Plasma chamber equipped with swirl motion side gas feed

Abstract

The present invention relates to a plasma chamber provided with a swirl motion side gas feed, and includes a housing provided with a placement portion on which the wafer is placed, a first swirl motion side gas feed provided on a side surface of the housing for injecting gas into the housing, and a second swirl motion side gas feed provided on the side surface of the housing for injecting gas into the housing. The first swirl motion side gas feed and the second swirl motion side gas feed inject gas along the wall surface of the housing. The first swirl motion side gas feed injects gas on a plane extending in a direction parallel to the plane formed by the placement portion, and the second swirl motion side gas feed injects gas at an angle with respect to the plane extending in a direction parallel to the plane formed by the placement portion.

Description

[Technical Field]

[0001] The present invention relates to a plasma chamber equipped with a swirl motion side gas feed. More specifically, the present invention relates to a plasma chamber equipped with a swirl motion side gas feed that can maintain a uniform etching rate inside the chamber by adjusting the design of the side gas feed, which is provided on the side of the chamber and injects gas to form a downward swirl motion. [Background technology]

[0002] Generally, ensuring uniformity is extremely important in the semiconductor manufacturing process, and this uniformity can be ensured or controlled during the etching process within the semiconductor manufacturing process.

[0003] The semiconductor etching process can be carried out inside a plasma chamber. The plasma chamber forms plasma in its internal reaction space, and the semiconductor etching process is performed using this plasma.

[0004] The upper part of the plasma chamber is equipped with a plasma source for forming plasma. Typical examples of plasma sources include capacitively coupled plasma (CCP) sources and inductively coupled plasma (ICP) sources.

[0005] In etching processes, the gas distribution within the plasma chamber can be a crucial factor in maintaining a uniform etching rate. Generally, to maintain a uniform etching rate, chambers using capacitively coupled plasma sources employ a shower head design, while chambers using inductively coupled plasma employ a bottom gas feed (BGF), center gas feed (CGF), or side gas feed (SGF).

[0006] Inductively coupled plasma (ICP) can increase the etching rate more than capacitively coupled plasma (CCP), but ICP has the problem of low selectivity and poor process repeatability.

[0007] Furthermore, in inductively coupled plasma (ICP), when the gas injected into the plasma chamber consists of heavy molecules, it is difficult to maintain a uniform etching rate via a center gas feed. Specifically, when using a center gas feed, the etching rate can be improved by increasing the velocity in the z direction (downward towards the chamber) due to the heavy molecules, but this results in a decrease in the uniformity of the etching rate. [Overview of the project] [Problems that the invention aims to solve]

[0008] The present invention aims to solve the above-mentioned problems and, more specifically, relates to a plasma chamber equipped with a swirl motion side gas feed that can maintain a uniform etching rate inside the chamber by adjusting the design of the side gas feed, which is provided on the side of the chamber and injects gas to form a downward swirl motion. [Means for solving the problem]

[0009] The plasma chamber equipped with the swirl motion side gas feed of the present invention, which solves the above-mentioned problems, is a plasma chamber in which plasma is formed for etching a wafer, and includes a housing equipped with a mounting portion on which the wafer is placed, a first swirl motion side gas feed provided on the side of the housing for injecting gas into the interior of the housing, and a second swirl motion side gas feed provided on the side of the housing for injecting gas into the interior of the housing, wherein the first swirl motion side gas feed and the second swirl motion side gas feed inject gas along the wall surface of the housing, the first swirl motion side gas feed injects gas on a plane extending in a direction parallel to the plane formed by the mounting portion, and the second swirl motion side gas feed injects gas at an angle with respect to the plane extending in a direction parallel to the plane formed by the mounting portion.

[0010] The gas injected from the first swirl motion side gas feed and the second swirl motion side gas feed of a plasma chamber equipped with the swirl motion side gas feed of the present invention, which solves the problems described above, can be injected onto the wafer while forming a downward swirl motion within the housing.

[0011] The velocity (v o ) of the gas injected from the second swirl motion side gas feed of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above-mentioned problems forms a plane extending in a direction parallel to the plane formed by the placement portion at the position where the second swirl motion side gas feed is provided in the housing, and for the cylindrical coordinate system (r, θ, z) with the point where the plane meets the center line of the housing as the origin, v o =(0, v θ , v z )(v z ≠0) can be achieved.

[0012] The velocity (v o ) of the gas injected from the first swirl motion side gas feed of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above-mentioned problems forms a plane extending in a direction parallel to the plane formed by the placement portion at the position where the first swirl motion side gas feed is provided in the housing, and for the cylindrical coordinate system (r, θ, z) with the point where the plane meets the center line of the housing as the origin, v o =(0, v θ , 0) can be achieved.

[0013] The gases injected from the first swirl motion side gas feed and the second swirl motion side gas feed of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above-mentioned problems can contain any one or more of fluorocarbon series (C x F y ), fluorohydrocarbon series (C x H y F z ), SF6, C3F6O, Ar, O2, N2.

[0014] The gas injected from the second swirl motion side gas feed of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above problems can include a gas having a molecular weight heavier than the gas injected from the first swirl motion side gas feed.

[0015] The position where the second swirl motion side gas feed is installed in the housing of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above problems can be installed higher than the position where the first swirl motion side gas feed is installed in the housing.

[0016] The gas injected from the second swirl motion side gas feed of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above problems includes any one or more of C4F8, C4F6, C3F8, C3F6, C2F6, SF6, C3F6O, and the gas injected from the first swirl motion side gas feed can include any one or more of CF4, CHF3, Ar, O2, N2.

[0017] The plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above problems is provided at the upper part of the housing, further includes a center gas feed for injecting gas inside the housing, and the gas injected from the first swirl motion side gas feed and the second swirl motion side gas feed can include a gas having a molecular weight heavier than the gas injected from the center gas feed.

[0018] The gas injected from the center gas feed of the plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above problems can include any one or more of O2, N2, Ar.

[0019] A plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above-mentioned problems further includes an injection motion side gas feed that injects gas into the interior of the housing, wherein the injection motion side gas feed can inject gas in the direction of the surface of the wafer placed on the aforementioned mounting portion or in the direction of the upper surface of the wafer.

[0020] The gas ejected from the injection motion side gas feed of a plasma chamber equipped with the swirl motion side gas feed of the present invention, which solves the above-mentioned problems, may include a gas having a lighter molecular weight than the gas ejected from the first swirl motion side gas feed and the gas ejected from the second swirl motion side gas feed.

[0021] The gas injected from the injection motion side gas feed of a plasma chamber equipped with the swirl motion side gas feed of the present invention, which solves the problems described above, may contain one or more of Ar, O2, and N2.

[0022] The housing of a plasma chamber equipped with the swirl motion side gas feed of the present invention for solving the above-mentioned problems is provided with a plurality of first swirl motion side gas feeds and a plurality of second swirl motion side gas feeds, wherein three or more of the plurality of first swirl motion side gas feeds provided in the housing are provided at the same height from the aforementioned mounting portion to maintain the uniformity of etching, and three or more of the plurality of second swirl motion side gas feeds provided in the housing are provided at the same height from the aforementioned mounting portion.

[0023] The plasma formed in the internal space of the housing of the plasma chamber equipped with the swirl motion side gas feed of the present invention, which solves the problems described above, contains ions and radicals, and the wafer can be etched by the synergy effect of the ions and radicals. [Effects of the Invention]

[0024] The present invention relates to a plasma chamber equipped with a swirl motion side gas feed, which has the advantage of being able to maintain a uniform etching rate inside the chamber by adjusting the design of the side gas feed, which is provided on the side of the chamber and injects gas to form a swirl motion (downward swirl motion).

[0025] Furthermore, the present invention has the advantage of improving the etching speed while also improving the uniformity of the etching speed by using a first swirl motion side gas feed that injects gas on a plane extending in a direction parallel to the plane formed by the mounting portion, and a second swirl motion side gas feed that injects gas at an angle to the plane extending in a direction parallel to the plane formed by the mounting portion.

[0026] In addition, the present invention has the advantage of being able to improve the etching rate while improving the uniformity of the etching rate by simultaneously using a first swirl motion side gas feed, a second swirl motion side gas feed, an injection motion side gas feed, and a center gas feed, and injecting heavy molecular gases through the side gas feeds. [Brief explanation of the drawing]

[0027] [Figure 1] This figure shows a plasma chamber according to an embodiment of the present invention. [Figure 2]This figure shows that, according to an embodiment of the present invention, the housing is equipped with a first swirl motion side gas feed, a second swirl motion side gas feed, and a center gas feed. [Figure 3] This figure shows that, according to an embodiment of the present invention, a plurality of first swirl motion side gas feeds and second swirl motion side gas feeds are installed in the housing. [Figure 4] This figure shows that, according to an embodiment of the present invention, the direction of the velocity (vector) of the gas ejected from the first swirl motion side gas feed is vo = (0, vθ, 0) with respect to the cylindrical coordinate system (r, θ, z). [Figure 5] This figure shows that, according to an embodiment of the present invention, the direction of the velocity (vector) of the gas ejected from the second swirl motion side gas feed is vo = (0, vθ, vz) with respect to the cylindrical coordinate system (r, θ, z). [Figure 6] This figure shows that, according to an embodiment of the present invention, the housing is equipped with a first swirl motion side gas feed, a second swirl motion side gas feed, an injection motion side gas feed, and a center gas feed. [Modes for carrying out the invention]

[0028] This specification clarifies the scope of the invention, explains the principles of the invention, and discloses examples so that a person with ordinary skill in the art to which the invention pertains can practice the invention. The disclosed examples can be embodied in a variety of forms.

[0029] Expressions such as "includes" or "may include" used in various embodiments of the present invention indicate the existence of the disclosed function, operation, or component, etc., and do not limit one or more additional functions, operations, or components, etc. Furthermore, in various embodiments of the present invention, terms such as "includes" or "has" are intended to specify the existence of features, numbers, stages, operations, components, parts, or combinations thereof described in the specification, and should be understood not to preemptively exclude the possibility of the existence or addition of one or more other features, numbers, stages, operations, components, parts, or combinations thereof.

[0030] When it is mentioned that one component is "connected and joined" to another component, it should be understood that the first component may be directly connected or joined to the other component, but it should also be understood that there may be a new, separate component between the first component and the other component. On the other hand, when it is mentioned that one component is "directly connected" or "directly joined" to another component, it should be understood that there is no new, separate component between the first component and the other component.

[0031] The terms first, second, etc., used herein may be used to describe a variety of components, but the components should not be limited by the terms. The terms are used solely for the purpose of distinguishing one component from another.

[0032] The present invention relates to a plasma chamber equipped with a swirl motion side gas feed, wherein a uniform etching rate can be maintained inside the chamber by adjusting the design of the side gas feed, which is provided on the side of the chamber and injects gas to form a downward swirl motion.

[0033] In a plasma chamber used to etch wafers, the variables influencing the etching process include the etchant, diluent, oxygen, pressure, source power, and bias power. In most oxide etching processes, since ions are dominant, temperature does not significantly affect the etching process. Here, the variable with the greatest impact on the etching rate is likely the bias power, followed by pressure. The etching gas also influences the etching rate.

[0034] In the etching process, when the etching gas is incident perpendicular to the plane formed by the mounting area on which the wafer is placed (incidence angle of 0 degrees), sputtering is strong and the etching rate is highest. Conversely, when the etching gas is incident from the side in a direction parallel to the plane formed by the mounting area on which the wafer is placed (incidence angle of 90 degrees), it contributes almost nothing to etching.

[0035] A center gas feed (CGF), located at the top of the chamber and used to inject gas, has an incidence angle close to 0 degrees, while a side gas feed (SGF), located on the side of the chamber and used to inject gas toward the wafer surface, can be formed with an incidence angle of 30 to 60 degrees.

[0036] In this case, when the side gas feed injects gas parallel to the chamber wall, and the gas reaches the wafer while forming a swirl motion, the incidence angle increases and the etching rate decreases, but the uniformity of the etching rate can be improved.

[0037] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can maintain a uniform etching rate inside the chamber by adjusting the design of the side gas feed, which injects gas to form a downward swirl motion. Preferred embodiments of the present invention will be described in detail below with reference to the attached drawings.

[0038] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention includes a housing 110, a first swirl motion side gas feed 120, and a second swirl motion side gas feed 130.

[0039] Referring to Figure 1, the housing 110 is provided with a reaction space inside for etching the wafer 10 with plasma. The housing 110 may be the outer wall of a plasma chamber according to an embodiment of the present invention, and is provided with a space inside.

[0040] The housing 110 may be provided with a mounting section 111 on which the wafer 10 is placed, and the wafer 10 can be loaded into the mounting section 111. When the wafer 10 is loaded into the housing 110, the wafer 10 can be etched by the plasma formed inside the housing 110.

[0041] The mounting portion 111 may be a plate provided inside the housing 110 on which the wafer 10 is placed, or the mounting portion 111 may be a wafer chuck that supports the wafer 10 by placing it on it.

[0042] According to an embodiment of the present invention, a plasma source 113 for forming plasma can be provided at the top of the housing 110. Referring to Figure 1, the plasma source 113 may include a coil 114 and an RF power generator 115, which together form plasma inside the housing 110. Of course, to maximize the transmission of RF power, a matchbox can be placed between the RF power generator 115 and the plasma coil.

[0043] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention may further include a bias RF source 116 capable of applying a bias to the aforementioned mounting section 111. Referring to Figure 1, the bias RF source 116 can apply a bias to the aforementioned mounting section 111, thereby applying a bias to the plasma during the etching process. Of course, a bias match box can also be installed in the bias RF source 116 for efficient power transfer.

[0044] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention may be an improvement over conventional methods using an inductively coupled plasma (ICP) source, while solving the problems associated with such methods.

[0045] Furthermore, a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention may be a Synergistic Resonance ICP (SRICP) that utilizes resonance and synergy effects.

[0046] Specifically, the plasma formed in the internal space of the housing 110 of the plasma chamber equipped with the swirl motion side gas feed according to an embodiment of the present invention contains ions and radicals, and the wafer 10 can be etched by the synergy effect of the ions and radicals.

[0047] Plasma is broadly composed of electrons, ions, and radicals. A closer examination of conventional methods for etching wafers with plasma reveals that the dominant species in the plasma etching process is either ions or radicals. Specifically, in conventional methods of etching wafers with plasma, metal etching primarily utilizes radicals, while oxide etching primarily utilizes ions.

[0048] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention is capable of simultaneously utilizing ions and radicals, where the dominant species in the plasma etching process is not necessarily just one of ions or radicals. However, it is not limited to this, and a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can also be applied when using only one of ions or radicals, and in this case as well, the uniformity of the etching rate can be improved.

[0049] The plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention utilizes a process region in which ions and radicals act together to produce a synergy effect, rather than ion-dominant or radical-dominant reactions during the etching process.

[0050] More specifically, a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can improve selectivity while maintaining a high etching rate by simultaneously using ions and radicals, through resonance and synergy effects between ions and radicals.

[0051] Referring to Figure 2, the first swirl motion side gas feed 120 is provided on the side of the housing 110 and injects gas into the interior of the housing 110. The second swirl motion side gas feed 130 is provided on the side of the housing 110 and injects gas into the interior of the housing 110.

[0052] Referring to Figures 2 and 3, the housing 110 may be equipped with a plurality of the first swirl motion side gas feeds 120, each of which includes a first nozzle 121 with a first nozzle hole 122 from which gas is injected, and the housing 110 may be equipped with a plurality of the first nozzles 121.

[0053] Referring to Figures 2 and 3, the housing 110 may be equipped with a plurality of the second swirl motion side gas feeds 130, each of which includes a second nozzle 131 with a second nozzle hole 132 through which gas is injected, and the housing 110 may be equipped with a plurality of the second nozzles 131.

[0054] According to an embodiment of the present invention, the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 are capable of injecting gas along the wall surface of the housing 110.

[0055] When the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 inject gas along the wall surface of the housing 110, the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can be injected onto the wafer 10 while forming a downward swirl motion within the housing 110.

[0056] When the gases ejected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 come into contact with the wafer 10 while forming a downward swirl motion, the gases move further due to centrifugal force even after contacting the wafer 10, causing a diffusion effect. This diffusion effect causes the gases to react with nearby particles, thereby improving the uniformity of the etching rate.

[0057] Referring to Figure 4, when the first swirl motion side gas feed 120 injects gas along the wall surface of the housing 110, the first swirl motion side gas feed 120 may inject gas on a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion 111.

[0058] Specifically, the first nozzle 121 of the first swirl motion side gas feed 120 is extended along the side of the housing 110, so that the gas ejected from the first swirl motion side gas feed 120 is ejected along the wall surface of the housing 110.

[0059] Referring to Figure 4, the velocity (v) of the gas injected from the first swirl motion side gas feed 120 oThe velocity vector is calculated relative to the position where the first swirl motion side gas feed 120 is provided in the housing 110, with respect to the cylindrical coordinate system (r,θ,z). o =(0,v θ It can be ,0).

[0060] More specifically, if a plane is formed in the housing 110 at the position where the first swirl motion side gas feed 120 is provided, extending in a direction parallel to the plane formed by the aforementioned mounting portion 111, and a cylindrical coordinate system (r,θ,z) is defined with the origin at the point where the plane and the center line 112 of the housing 110 meet, then the velocity (v) of the gas ejected from the first swirl motion side gas feed 120 is... o )(velocity vector) is v o =(0,v θ It can be ,0).

[0061] In other words, the velocity vector of the gas injected from the first swirl motion side gas feed 120 can be injected in the θ direction, even though it has no component in the r direction (it is 0). When gas is injected from the first swirl motion side gas feed 120 in this manner, the first swirl motion side gas feed 120 can inject gas along the wall surface of the housing 110.

[0062] When gas is injected along the wall surface of the housing 110 via the first swirl motion side gas feed 120, the gas injected from the first swirl motion side gas feed 120 can be injected onto the wafer 10 while forming a downward swirl motion within the housing 110.

[0063] Referring to Figure 5, when the second swirl motion side gas feed 130 injects gas along the wall surface of the housing 110, the second swirl motion side gas feed 130 may inject gas at an angle with respect to a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion 111.

[0064] Specifically, the second nozzle 131 of the second swirl motion side gas feed 130 is extended along the side of the housing 110, so that the gas ejected from the second swirl motion side gas feed 130 is ejected along the wall surface of the housing 110.

[0065] Referring to Figure 5, the velocity (v) of the gas injected from the second swirl motion side gas feed 130 o The velocity vector is calculated relative to the cylindrical coordinate system (r,θ,z), with respect to the position where the second swirl motion side gas feed 130 is provided in the housing 110. o =(0,v θ ,v z ) can be expressed as follows: (where v z >0 or v z < 0, v z (It can be ≠ 0.)

[0066] More specifically, if a plane is formed in the housing 110 at the position where the second swirl motion side gas feed 130 is provided, extending in a direction parallel to the plane formed by the aforementioned mounting portion 111, and a cylindrical coordinate system (r,θ,z) is defined with the origin at the point where the plane and the center line 112 of the housing 110 meet, then the velocity (v) of the gas ejected from the second swirl motion side gas feed 130 is... o )(velocity vector) is v o =(0,v θ ,v z ) can become.

[0067] In other words, the velocity vector of the gas injected from the second swirl motion side gas feed 130 can be injected in the θ direction, even though it has no component in the r direction (it is 0). When gas is injected from the second swirl motion side gas feed 130 in this manner, the second swirl motion side gas feed 130 can inject gas along the wall surface of the housing 110.

[0068] The velocity vector v of the gas ejected from the second swirl motion side gas feed 130 o =(0,v θ ,v z ) with v z (v z (≠0) That is, the second swirl motion side gas feed 130 can inject gas upward or downward with respect to a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion 111 at the position where the second swirl motion side gas feed 130 is provided in the housing 110. (v z >0 or v z <0)

[0069] When gas is injected from the second swirl motion side gas feed 130 in this manner, the gas injected from the second swirl motion side gas feed 130 can be injected onto the wafer 10 while forming a downward swirl motion within the housing 110.

[0070] According to an embodiment of the present invention, the uniformity of the etching rate can be improved by injecting gas in a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion 111 at the position where the first swirl motion side gas feed 120 is provided in the housing 110.

[0071] However, if gas is injected via the first swirl motion side gas feed 120 into the housing 110 at the position where the first swirl motion side gas feed 120 is provided, in a plane extending in a direction parallel to the plane formed by the aforementioned mounting portion 111, it may be possible to improve the uniformity of the etching rate, but it may be difficult to effectively improve the etching rate.

[0072] In a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention, the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can be used simultaneously to improve the etching speed while also improving the uniformity of the etching speed.

[0073] In an embodiment of the present invention, when gas is injected downwards into a plane extending in a direction parallel to the plane formed by the aforementioned mounting portion 111 at the position where the second swirl motion side gas feed 130 is provided in the housing 110 via the second swirl motion side gas feed 130, a downward angle is formed, which makes it possible to more effectively improve the etching rate.

[0074] Referring to Figure 3, the housing 110 can be equipped with a plurality of the first swirl motion side gas feeds 120 and a plurality of the second swirl motion side gas feeds 130.

[0075] According to embodiments of the present invention, it is preferable that three or more of the multiple first swirl motion side gas feeds 120 provided in the housing 110 are provided at the same height from the mounting portion 111 described above. Furthermore, it is preferable that three or more of the multiple second swirl motion side gas feeds 130 provided in the housing 110 are provided at the same height from the mounting portion 111 described above.

[0076] Referring to Figures 2 and 3, the multiple first swirl motion side gas feeds 120 can be mounted on a plane that extends in a direction parallel to the plane formed by the mounting portion 111, and is spaced at the same height (h1) from the mounting portion 111.

[0077] According to an embodiment of the present invention, it is preferable that three or more of the first swirl motion side gas feeds 120 are provided on a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion 111.

[0078] The first swirl motion side gas feed 120 is capable of injecting gas along the wall surface of the housing 110, and the gas injected from one of the first swirl motion side gas feeds 120 is subjected to force from another of the first swirl motion side gas feeds 120 to form a downward swirl motion.

[0079] In this case, if the number of first swirl motion side gas feeds 120 provided on a plane extending in a direction parallel to the plane formed by the aforementioned mounting portion 111 is less than three, the distance between one first swirl motion side gas feed 120 and another first swirl motion side gas feed 120 becomes large, making it difficult to form a downward swirl motion.

[0080] Therefore, it is preferable that the number of first swirl motion side gas feeds 120 provided on a plane extending in a direction parallel to the plane formed by the aforementioned mounting portion 111 is three or more. Referring to Figure 3, the housing 110 can be provided with n or more (n≧3) first swirl motion side gas feeds 120.

[0081] However, the above is not limited to the above, and multiple first swirl motion side gas feeds 120 may be provided in the housing 110 at different heights from each other. Multiple first swirl motion side gas feeds 120 may be provided at points a specified height away from the mounting portion 111, and multiple first swirl motion side gas feeds 120 may also be provided at points a specified height away from the mounting portion 111.

[0082] In other words, when the housing 110 is provided with a plurality of the first swirl motion side gas feeds 120, three or more of the first swirl motion side gas feeds 120 can form a single layer while simultaneously forming multiple layers.

[0083] Referring to Figures 2 and 3, the multiple second swirl motion side gas feeds 130 can be mounted on a plane that extends in a direction parallel to the plane formed by the mounting portion 111, and is spaced at the same height (h2) from the mounting portion 111.

[0084] According to an embodiment of the present invention, it is preferable that three or more of the second swirl motion side gas feeds 130 are provided on a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion 111.

[0085] The second swirl motion side gas feed 130 is capable of injecting gas along the wall surface of the housing 110, and the gas injected from one of the second swirl motion side gas feeds 130 receives force from the other second swirl motion side gas feed 130 to form a downward swirl motion.

[0086] In this case, if the number of second swirl motion side gas feeds 130 provided on a plane extending in a direction parallel to the plane formed by the aforementioned mounting portion 111 is less than three, the distance between one second swirl motion side gas feed 130 and another second swirl motion side gas feed 130 becomes large, making it difficult to form a downward swirl motion.

[0087] Therefore, it is preferable that the number of second swirl motion side gas feeds 130 provided on a plane extending in a direction parallel to the plane formed by the aforementioned mounting portion 111 is three or more. Referring to Figure 3, the housing 110 can be provided with n or more (n≧3) second swirl motion side gas feeds 130.

[0088] However, the invention is not limited thereto, and multiple second swirl motion side gas feeds 130 may be provided in the housing 110 at different heights from each other. Multiple second swirl motion side gas feeds 130 may be provided at points a specified height away from the mounting portion 111, and multiple second swirl motion side gas feeds 130 may also be provided at points a specified height away from the mounting portion 111.

[0089] In other words, when the housing 110 is provided with a plurality of the second swirl motion side gas feeds 130, three or more of the second swirl motion side gas feeds 130 can form multiple layers, each forming a single layer.

[0090] The gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 according to the embodiment of the present invention is of the fluorocarbon series (C x F y ) gases, fluorohydrocarbon series (Cx H y F z It can contain one or more of the following gases: SF6, C3F6O, Ar, O2, and N2. (x, y, and z are natural numbers)

[0091] Referring to Figures 2 and 3, the position in the housing 110 where the second swirl motion side gas feed 130 is installed can be above the position in the housing 110 where the first swirl motion side gas feed 120 is installed. Specifically, the second swirl motion side gas feed 130 can be provided in the housing 110 at a higher position than the first swirl motion side gas feed 120.

[0092] According to embodiments of the present invention, the gas injected from the second swirl motion side gas feed 130 may include a gas having a heavier molecular weight than the gas injected from the first swirl motion side gas feed 120.

[0093] According to embodiments of the present invention, the gas injected from the second swirl motion side gas feed 130 includes one or more of C4F8, C4F6, C3F8, C3F6, C2F6, SF6, and C3F6O, and the gas injected from the first swirl motion side gas feed 120 may include one or more of CF4, CHF3, Ar, O2, and N2.

[0094] In the wafer etching process, etching of SiO2 and masks such as photoresist (PR) and ACL (amorphous carbon layer) can be carried out. Here, the techniques for etching SiO2 and masks such as photoresist (PR) and ACL (amorphous carbon layer) are already widely known, so a detailed explanation will be omitted.

[0095] In this case, in order to improve the selectivity, it is preferable to increase the etching rate of SiO2 and decrease the etching rate of masks such as photoresist (PR) and ACL (amorphous carbon layer). To increase the etching rate, it is preferable that the incident angle formed between the gas sprayed onto the wafer 10 and the wafer 10 is small, and to decrease the etching rate, it is preferable that the incident angle formed between the gas sprayed onto the wafer 10 and the wafer 10 is large.

[0096] Here, if the angle of incidence formed between the gas injected onto the wafer 10 and the wafer 10 is 0 degrees, the gas is injected vertically and comes into contact with the wafer 10. If the angle of incidence formed between the gas injected onto the wafer 10 and the wafer 10 is 90 degrees, the gas can come into contact with the wafer 10 in a direction parallel to the plane formed by the wafer 10.

[0097] The first swirl motion side gas feed 120 injects gas on a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion 111 (the z-direction component is 0), so the incident angle becomes large and the gas can come into contact with the wafer 10. The second swirl motion side gas feed 130 forms an angle with the plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion 111 (v z <0) Since the gas is injected at a downward angle, the incidence angle is smaller than that of the gas injected from the first swirl motion side gas feed 120, allowing it to come into contact with the wafer 10.

[0098] To improve the etching rate of SiO2, it is desirable to spray the gas with a heavy molecular weight so that the angle of incidence is small. Conversely, to decrease the etching rate of masks such as photoresist (PR) and ACL (amorphous carbon layer), it is preferable to spray the gas with a relatively light molecular weight so that the angle of incidence is large.

[0099] It is preferable to inject a gas that etches a mask such as a photoresist (PR) or ACL (amorphous carbon layer) through the first swirl motion side gas feed 120, which injects gas at a larger angle of incidence than the second swirl motion side gas feed 130, and it is preferable to inject a gas that etches SiO2 from the second swirl motion side gas feed 130.

[0100] Therefore, it is preferable that the gas ejected from the second swirl motion side gas feed 130 contains one or more of the gases that etch SiO2, namely C4F8, C4F6, C3F8, C3F6, C2F6, SF6, and C3F6O, and that the gas ejected from the first swirl motion side gas feed 120 contains one or more of the gases that etch photoresist (PR), namely CF4, CHF3, Ar, O2, and N2.

[0101] Furthermore, since the gas ejected from the second swirl motion side gas feed 130 is a gas that improves the etching rate of SiO2, and the gas ejected from the first swirl motion side gas feed 120 is a gas that reduces the etching rate of masks such as photoresist (PR) and ACL (amorphous carbon layer), it is preferable that the gas ejected from the second swirl motion side gas feed 130 contains a gas with a heavier molecular weight than the gas ejected from the first swirl motion side gas feed 120.

[0102] In addition, the gas ejected from the second swirl motion side gas feed 130 is a gas that improves the etching rate of SiO2, and the gas ejected from the first swirl motion side gas feed 120 is a gas that reduces the etching rate of masks such as photoresist (PR) and ACL (amorphous carbon layer). Therefore, it is preferable that the position in the housing 110 where the second swirl motion side gas feed 130 is installed is above the position in the housing 110 where the first swirl motion side gas feed 120 is installed.

[0103] Only when the second swirl motion side gas feed 130, which injects gas at a downward angle, is positioned higher than the first swirl motion side gas feed 120 can the etching rate of SiO2 be effectively increased while the etching rate of masks such as photoresist (PR) and ACL (amorphous carbon layer) be reduced.

[0104] However, this is not limited to the above, and the second swirl motion side gas feed 130 may be installed at the same height as the first swirl motion side gas feed 120, or the second swirl motion side gas feed 130 may be installed at a lower height than the first swirl motion side gas feed 120, as needed.

[0105] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention may further include a center gas feed 140 provided on the upper part of the housing 110 for injecting gas into the interior of the housing 110.

[0106] When the gas injected into the plasma chamber consists of heavy molecules, using only a center gas feed presents a problem: the heavy molecules increase the velocity in the z-direction (downward towards the housing), resulting in poor etching rate uniformity.

[0107] Referring to Figure 2, in a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention, while using the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 together with the center gas feed 140, it becomes possible to prevent deterioration of etching rate uniformity by adjusting the design of the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130.

[0108] According to embodiments of the present invention, the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 may include gases having a heavier molecular weight than the gas injected from the center gas feed 140.

[0109] Since injecting heavy molecule gas from the center gas feed 140 does not improve the uniformity of the etching rate, it is preferable that the heavy molecule gas be injected via the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130.

[0110] Specifically, when using heavy molecule gases such as CF4, C4F6, C4F8, C3F8, SF6, C3F6, and C3F6O, these heavy molecule gases can be injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 to form a downward swirl motion, thereby improving the uniformity of the etching rate. According to embodiments of the present invention, the gas injected from the center gas feed 140 may contain one or more of O2, N2, and Ar.

[0111] However, this is not limited to the above, and the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 may not be heavier than the gas injected from the center gas feed 140.

[0112] The gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can also be injected from the center gas feed 140. That is, a portion of the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can also be injected from the center gas feed 140 while its flow rate is adjusted.

[0113] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention may further include an injection motion side gas feed 150 that injects gas into the interior of the housing 110.

[0114] The injection motion side gas feed 150 may inject gas in the direction of the surface of the wafer 10 placed on the mounting portion 111 or in the direction of the upper surface of the wafer 10. The injection motion side gas feed 150 may inject gas toward the wafer 10, rather than injecting gas to form a swirl motion.

[0115] Referring to Figure 6, the injection motion side gas feed 150 includes a nozzle 151 having a nozzle hole 152 through which gas is injected, and the housing 110 may be provided with a plurality of such nozzles 151.

[0116] According to embodiments of the present invention, the gas injected from the injection motion side gas feed 150 may include a gas having a lower molecular weight than the gas injected from the first swirl motion side gas feed 120 and the gas injected from the second swirl motion side gas feed 130.

[0117] Since injecting heavy molecule gas from the injection motion side gas feed 150 does not improve the uniformity of the etching rate, it is preferable that the heavy molecule gas be injected via the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130.

[0118] The gas injected from the injection motion side gas feed 150 may contain one or more of Ar, O2, and N2.

[0119] However, this is not limited to the above, and the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 may not be heavier than the gas injected from the injection motion side gas feed 150.

[0120] The gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can also be injected from the injection motion side gas feed 150.

[0121] In other words, a portion of the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can also be injected from the injection motion side gas feed 150 while its flow rate is adjusted.

[0122] According to embodiments of the present invention, the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150 can be equipped with a flow ratio controller (FRC).

[0123] The flow rate and type of gas injected from the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150 can be adjusted via the flow rate regulator.

[0124] According to an embodiment of the present invention, the plurality of first swirl motion side gas feeds 120 and the plurality of second swirl motion side gas feeds 130 can be provided in the housing 110 at different heights from each other.

[0125] The multiple first swirl motion side gas feeds 120 and the multiple second swirl motion side gas feeds 130 may be provided in groups of three or more at points a specified height away from the mounting unit 111, and the multiple first swirl motion side gas feeds 120 and the multiple second swirl motion side gas feeds 130 may also be provided in groups of three or more at points a specified height away from the mounting unit 111.

[0126] In other words, when the housing 110 is provided with a plurality of first swirl motion side gas feeds 120 and a plurality of second swirl motion side gas feeds 130, three or more first swirl motion side gas feeds 120 can form one layer, and three or more second swirl motion side gas feeds 130 can form one layer, thereby forming multiple layers. (In this case, the first swirl motion side gas feeds 120 and the second swirl motion side gas feeds 130 can be provided at different positions from each other.)

[0127] According to embodiments of the present invention, the lengths of the first nozzle 121 provided in the first swirl motion side gas feed 120 and the second nozzle 131 provided in the second swirl motion side gas feed 130 can be changed as needed. In addition, the size, number, and direction of the first nozzle holes 122 provided in the first swirl motion side gas feed 120 and the second nozzle holes 132 provided in the second swirl motion side gas feed 130 can be changed as needed.

[0128] According to embodiments of the present invention, the plasma formed in the reaction space of the housing 110 contains ions and radicals, and the wafer 10 can be etched by the synergistic effect of the ions and radicals.

[0129] According to embodiments of the present invention, the plasma formed in the reaction space of the housing 110 contains electrons, and the electron energy relaxation length (EERL) of the electrons may be smaller than the diameter of the housing.

[0130] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can be operated in a local electron kinetics process region. Conventional etching processes have been carried out in a nonlocal electron kinetics process region where the electron energy relaxation length (EERL) is always greater than the diameter of the process chamber.

[0131] However, a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can be operated in a process region of Local Electron Kinetics where the electron energy relaxation length (EERL) is smaller than the diameter of the process chamber (the diameter of the housing 110).

[0132] As a result, the plasma chamber equipped with the swirl motion side gas feed according to the embodiment of the present invention can have a higher plasma density at the edge of the housing 110 than at the center of the housing 110, and the etching rate can also be higher at the edge of the housing 110 than at the center of the housing 110.

[0133] In conventional etching processes, a problem can occur where etching is weak at the edges of the wafer (low edge yield problem). However, in the plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention, the etching rate at the edges of the housing 110 is higher than that at the center of the housing 110, thereby preventing the occurrence of the aforementioned problem.

[0134] Furthermore, in conventional etching processes, to solve the problem of weak etching at the wafer edges (low edge yield problem), an independent RF power was applied, or heaters, lift devices to prevent corrosion of the edge ring, etc., were used.

[0135] However, the plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention has the advantage of eliminating the need for separate equipment by forming an etching rate at the edge of the housing 110 that is higher than that at the center of the housing 110, thereby reducing manufacturing costs and improving yield.

[0136] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention is operated in the process area of ​​Local Electron Kinetics, and the plasma density inside the housing 110 can increase from the inside of the housing 110 to the outside of the housing 110.

[0137] This makes it possible to obtain a concave etch rate profile in which the etching rate is low inside the housing 110, but increases as you move towards the outside of the housing 110. The concave etch rate profile solves the low edge yield problem, where the etching rate decreases at the edges of the housing 110.

[0138] However, if heavy molecule gases such as CF4, C4F6, C4F8, C3F8, SF6, C3F6, and C3F6O are injected only through the center gas feed 140, it becomes impossible to obtain a concave etch rate profile. In other words, if heavy molecule gases are present and are injected from the center gas feed 140, the process region of Local Electron Kinetics may become ineffective.

[0139] In order to solve these problems, the plasma chamber equipped with the swirl motion side gas feed according to an embodiment of the present invention can inject heavy molecule gas from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130.

[0140] According to embodiments of the present invention, the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 may have a heavier molecular weight than the gas injected from the center gas feed 140. Since injecting a gas with heavy molecules from the center gas feed 140 does not improve the uniformity of the etching rate, it is preferable to inject the gas with heavy molecules via the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130.

[0141] Specifically, when using heavy molecule gases such as CF4, C4F6, C4F8, C3F8, SF6, C3F6, and C3F6O, the heavy molecule gases are injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 to form a downward swirl motion, thereby improving the uniformity of the etching rate.

[0142] Here, the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 may have a heavier molecular weight than the gas injected from the center gas feed 140, but some of the gases injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 may not be heavier than the gas injected from the center gas feed 140, or may be the same gas as the gas injected from the center gas feed 140.

[0143] In other words, heavy molecule gases are injected through the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130, while general gases that are not heavy molecule gases can be injected from all of the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, and the center gas feed 140.

[0144] According to an embodiment of the present invention, the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can be injected onto the wafer 10 while forming a downward swirl motion within the housing 110.

[0145] At this time, the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can form a downward swirl motion while rotating clockwise or counterclockwise.

[0146] Furthermore, multiple first swirl motion side gas feeds 120 and second swirl motion side gas feeds 130 can also form a downward swirl motion while being injected in different directions from each other.

[0147] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention uses an inductively coupled plasma (ICP) and the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130, wherein the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 can form a downward swirl motion.

[0148] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention, in which the gas injected from the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130 forms a downward swirl motion, can be applied to metal etching, oxide etching, and poly etching to improve the etching rate.

[0149] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can be used in plasma processes for semiconductors and displays, but is not limited thereto. It is also true that a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can be used in a variety of processes that utilize plasma processes other than semiconductors and displays.

[0150] Furthermore, the first swirl motion side gas feed 120 and the second swirl motion side gas feed 130, which inject gas to form a downward swirl motion, can also be applied to plasma processes such as plasma deposition, PR stripping, and plasma doping.

[0151] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can increase the etching rate and simultaneously improve the uniformity of the etching rate by appropriately adjusting the type of gas and gas flow rate injected from the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150.

[0152] Furthermore, a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can satisfy a center-low etch rate and vertical etch profile by appropriately adjusting the type of gas and gas flow rate injected from the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150, thereby satisfying a high selectivity ratio for masks such as photoresist (PR) and ACL (amorphous carbon layer).

[0153] Conventional plasma chambers adjust the appropriate gas type and gas flow rate through a trial-and-error method. However, a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can improve etching process performance by adjusting the design of the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150.

[0154] In other words, a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention can improve etching process performance by appropriately distributing the gas to the first swirl motion side gas feed 120, the second swirl motion side gas feed 130, the center gas feed 140, and the injection motion side gas feed 150 according to the characteristics of the gas, and adjusting the gas flow rate.

[0155] The plasma chamber equipped with the swirl motion side gas feed according to the above-described embodiment of the present invention has the following effects.

[0156] A plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention has the advantage of being able to maintain a uniform etching rate inside the chamber by adjusting the design of the side gas feed, which is provided on the side of the chamber and injects gas to form a downward swirl motion.

[0157] Furthermore, a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention has the advantage of improving etching speed while also improving the uniformity of the etching speed by using a first swirl motion side gas feed that injects gas on a plane extending in a direction parallel to the plane formed by the mounting portion, and a second swirl motion side gas feed that injects gas at an angle to the plane extending in a direction parallel to the plane formed by the mounting portion.

[0158] In addition, a plasma chamber equipped with a swirl motion side gas feed according to an embodiment of the present invention has the advantage of being able to improve the etching rate and the uniformity of the etching rate by simultaneously using a first swirl motion side gas feed, a second swirl motion side gas feed, an injection motion side gas feed, and a center gas feed to inject heavy molecular gases through the side gas feeds.

[0159] Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely illustrative, and a person with ordinary skill in the art will understand that a variety of modifications and variations of the embodiment are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical idea of ​​the appended claims.

Claims

1. In a plasma chamber where plasma is formed to etch a wafer, A housing equipped with a mounting section on which the wafer is placed, A first swirl motion side gas feed is provided on the side of the housing and injects gas into the interior of the housing. The housing includes a second swirl motion side gas feed provided on the side of the housing, which injects gas into the interior of the housing, The first swirl motion side gas feed and the second swirl motion side gas feed inject gas along the wall surface of the housing, The first swirl motion side gas feed injects gas on a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion, The second swirl motion side gas feed injects gas at an angle with respect to a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion, The velocity (v o) of the gas injected from the second swirl motion side gas feed is, A plane is formed in the housing at the position where the second swirl motion side gas feed is provided, extending in a direction parallel to the plane formed by the aforementioned mounting portion. A plasma chamber equipped with a swirl motion side gas feed, characterized in that, with respect to a cylindrical coordinate system (r, θ, z) whose origin is the point where the plane and the center line of the housing intersect, v o = (0, v θ, v z) (v z ≠ 0).

2. The gas injected from the first swirl motion side gas feed and the second swirl motion side gas feed is A plasma chamber equipped with a swirl motion side gas feed according to claim 1, characterized in that the gas is injected onto the wafer while forming a downward swirl motion within the housing.

3. The velocity (v) of the gas ejected from the first swirl motion side gas feed ｏ )teeth, A plane is formed in the housing at the position where the first swirl motion side gas feed is provided, extending in a direction parallel to the plane formed by the aforementioned mounting portion. For a cylindrical coordinate system (r, θ, z) whose origin is the point where the plane and the center line of the housing intersect, v ｏ = (0, v θ A plasma chamber equipped with a swirl motion side gas feed according to claim 1, characterized in that it is 0).

4. The gas injected from the first swirl motion side gas feed and the second swirl motion side gas feed is A gas of the fluorocarbon series (C ｘ F ｙ ), a gas of the fluorohydrocarbon series (C ｘ H ｙ F ｚ ), SF ６ , C ３ F ６ O, Ar, O ２ , N ２ The plasma chamber provided with the swirl motion side gas feed according to claim 1, characterized by containing any one or more of them.

5. The gas injected from the second swirl motion side gas feed is A plasma chamber equipped with a swirl motion side gas feed according to claim 1, characterized in that it contains a gas having a molecular weight heavier than the gas injected from the first swirl motion side gas feed.

6. The position in the housing where the second swirl motion side gas feed is installed is, A plasma chamber equipped with a swirl motion side gas feed according to claim 1, characterized in that it is installed above the position in the housing where the first swirl motion side gas feed is installed.

7. The gas injected from the second swirl motion side gas feed is C ４ F ８ , C ４ F ６ , C ３ F ８ , C ３ F ６ , C ２ F ６ SF ６ , C ３ F ６ It includes one or more of the following O: The gas injected from the first swirl motion side gas feed is CF ４ CHF ３ Ar, O ２ , N ２ A plasma chamber equipped with a swirl motion side gas feed according to claim 1, characterized by including one or more of the following.

8. In a plasma chamber in which plasma is formed for etching a wafer, A housing equipped with a mounting section on which the wafer is placed, A first swirl motion side gas feed is provided on the side of the housing and injects gas into the interior of the housing. The housing includes a second swirl motion side gas feed provided on the side of the housing, which injects gas into the interior of the housing, The first swirl motion side gas feed and the second swirl motion side gas feed inject gas along the wall surface of the housing, The first swirl motion side gas feed injects gas on a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion, The second swirl motion side gas feed injects gas at an angle with respect to a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion, The housing is further provided at the top and includes a center gas feed for injecting gas into the interior of the housing, A plasma chamber equipped with a swirl motion side gas feed, characterized in that the gases injected from the first swirl motion side gas feed and the second swirl motion side gas feed contain gases having a heavier molecular weight than the gas injected from the center gas feed.

9. The gas injected from the aforementioned center gas feed is O ２ , N ２ A plasma chamber equipped with a swirl motion side gas feed according to claim 8, characterized in that it contains one or more of the following: , and Ar.

10. In a plasma chamber where plasma is formed to etch a wafer, A housing equipped with a mounting section on which the wafer is placed, A first swirl motion side gas feed is provided on the side of the housing and injects gas into the interior of the housing. The housing includes a second swirl motion side gas feed provided on the side of the housing, which injects gas into the interior of the housing, The first swirl motion side gas feed and the second swirl motion side gas feed inject gas along the wall surface of the housing, The first swirl motion side gas feed injects gas on a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion, The second swirl motion side gas feed injects gas at an angle with respect to a plane that extends in a direction parallel to the plane formed by the aforementioned mounting portion, The invention further includes an injection motion side gas feed that injects gas into the interior of the housing, The plasma chamber is equipped with a swirl motion side gas feed, characterized in that the injection motion side gas feed injects gas in the direction of the surface of the wafer placed on the aforementioned mounting portion or in the direction of the upper surface of the wafer.

11. The gas injected from the aforementioned injection motion side gas feed is A plasma chamber equipped with a swirl motion side gas feed according to claim 10, characterized in that it contains a gas having a molecular weight lighter than the gas injected from the first swirl motion side gas feed and the gas injected from the second swirl motion side gas feed.

12. The gas injected from the injection motion side gas feed is Ar, O ２ , N ２ A plasma chamber equipped with a swirl motion side gas feed according to claim 11, characterized by including one or more of the following.

13. The housing is provided with a plurality of first swirl motion side gas feeds and a plurality of second swirl motion side gas feeds. The multiple first swirl motion side gas feeds provided in the housing are arranged such that three or more are at the same height from the aforementioned mounting portion. A plasma chamber equipped with a swirl motion side gas feed according to any one of claims 1, 8, or 10, characterized in that three or more of the second swirl motion side gas feeds provided in the housing are provided at the same height from the above-described mounting portion.

14. The plasma formed in the internal space of the housing comprises ions and radicals. A plasma chamber equipped with a swirl motion side gas feed according to any one of claims 1, 8, or 10, characterized in that the wafer is etched by the synergistic effect of the ions and the radicals.

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