A butterfly valve structure for a semiconductor device and a semiconductor device

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a butterfly valve structure for semiconductor equipment and semiconductor equipment, which comprises a butterfly valve shell, a valve plate body, a rotating part, an upper outer shell, a lower outer shell, a vibration generating piece and a vibration source; the outer shell and the lower outer shell are respectively arranged outside the valve plate body from the top and the bottom of the valve plate body; the vibration source is arranged outside the butterfly valve shell, the vibration generating piece is arranged on the valve plate body and is in contact with the upper outer shell and / or the lower outer shell; the upper outer shell and the lower outer shell arranged outside the valve plate body form a sealing layer to prevent by-products from being directly deposited on the valve plate body, and the vibration generating piece arranged on the valve plate body and the external vibration source transmit the vibration to the upper outer shell and the lower outer shell to shake off the by-products on the outer surfaces of the upper outer shell and the lower outer shell.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to a butterfly valve structure for semiconductor equipment and semiconductor equipment. Background Technology

[0002] In plasma processing equipment for semiconductor manufacturing, the pressure-controlled butterfly valve is a key component for maintaining the vacuum pressure of the process chamber. After prolonged use (e.g., after processing 1000 wafers), byproducts of the process gas gradually deposit on the surface of the valve plate's moving plate. These deposits alter the valve plate's physical properties, affecting not only the stability of pressure control but also, when they accumulate to a certain thickness, affecting the valve plate's opening and causing it to jam. This leads to equipment downtime, requiring vacuum breaking for disassembly and maintenance, severely impacting production efficiency.

[0003] To alleviate this problem, existing technologies typically employ a method of wrapping heating elements (such as heated foam) around the outside of the extraction pipe and valve to reduce the condensation of byproducts on the valve plate. However, this method has limitations: its heat is conducted from the outside in, failing to effectively and directly heat the core moving valve plate itself, resulting in poor removal efficiency; at the same time, to avoid exacerbating the risk of jamming due to excessive temperature difference and uneven expansion between the valve body and valve plate, the external heating temperature is strictly limited to a low level, further restricting the removal efficiency. Summary of the Invention

[0004] This invention relates to a butterfly valve structure for semiconductor devices and semiconductor devices. The purpose is to form a sealing layer by setting an upper outer shell and a lower outer shell covering the valve plate body to prevent byproducts from being directly deposited on the valve plate body. In combination with a vibration generator set on the valve plate body and an external vibration source, vibration is transmitted to the upper outer shell and the lower outer shell to shake off byproducts on their outer surfaces.

[0005] To achieve the above objectives, the present invention provides a butterfly valve structure for semiconductor devices, including a butterfly valve housing, a valve plate body, a rotating part, an upper outer cover, a lower outer cover, a vibration generating element, and a vibration generating source; The valve plate body is rotatably disposed within the inner cavity of the butterfly valve housing via the rotating part; The upper outer cover and the lower outer cover are respectively installed on the valve plate body from the top and bottom of the valve plate body to form a sealing structure on the periphery of the valve plate body to prevent by-products from being deposited on the valve plate body. The circumferential outer wall of the sealing structure has a gap between it and the inner wall of the butterfly valve housing to adjust the butterfly valve opening. The vibration source is located outside the butterfly valve housing, and the vibration generating element is located on the valve plate body and is in contact with the upper outer cover and / or the lower outer cover, so as to transmit the vibration generated by the vibration source to the upper outer cover and / or the lower outer cover through the vibration generating element, thereby shaking off the by-products attached to their outer surfaces.

[0006] Optionally, both the upper outer cover and the lower outer cover include a circular covering portion and an annular covering portion that is connected to the edge of the circular covering portion and extends along the axial direction of the circular covering portion, wherein the radius of the circular covering portion is larger than the radius of the valve plate body, and the sum of the axial heights of the annular covering portion of the upper outer cover and the annular covering portion of the lower outer cover is greater than the axial height of the valve plate body.

[0007] Optionally, the annular covering portion is provided with a mounting groove for the rotating portion to pass through.

[0008] Optionally, the inner wall of the mounting groove is provided with a sealing element, the inner diameter of which is adapted to the outer diameter of the rotating part, so as to be sleeved on the outside of the rotating part that passes through the mounting groove.

[0009] Optionally, a plurality of vibration generating elements are provided, and at least one vibration generating element is provided in the circular covering part of the upper outer shell, the annular covering part of the upper outer shell, the circular covering part of the lower outer shell, and the annular covering part of the lower outer shell.

[0010] Optionally, both the circular covering portion of the upper outer shell and the circular covering portion of the lower outer shell are provided with a plurality of first grooves. The first grooves extend radially and penetrate the annular covering portion to physically block the continuous deposition of by-products in the circumferential direction of the circular covering portion.

[0011] Optionally, both the circular covering portion of the upper outer shell and the circular covering portion of the lower outer shell are provided with a plurality of second grooves. The plurality of second grooves extend circumferentially along the circular covering portion and communicate with the first grooves to physically block the continuous deposition of by-products in the radial direction of the circular covering portion.

[0012] Optionally, the depth of the first groove increases from the center of the circular covering portion toward the edge, so that the byproducts deposited after vibration are removed are carried away by the airflow.

[0013] Optionally, the butterfly valve structure for semiconductor devices further includes a first cutting element and a first elastic element; One end of the first elastic member is fixedly disposed on the inner wall of the first groove, and the other end is connected to the first cutting member disposed in the first groove, so that the first cutting member moves in the first groove under the vibration force and the expansion and contraction force of the first elastic member.

[0014] Optionally, the butterfly valve structure for semiconductor devices further includes a second cutting element and a second elastic element; One end of the second elastic member is fixedly disposed on the inner wall of the second groove, and the other end is connected to the second cutting member disposed in the second groove, so that the second cutting member moves in the second groove under the vibration force and the expansion and contraction force of the second elastic member.

[0015] Optionally, heating elements are provided inside both the upper outer cover and the lower outer cover to reduce or remove the deposition of by-products on the outer surfaces of the upper outer cover and the lower outer cover by heating the upper outer cover and the lower outer cover.

[0016] Optionally, the butterfly valve structure for semiconductor devices further includes a by-product sensor and a control unit. The heating element, the vibration source, and the by-product sensor are all connected to the control unit. The by-product sensor is used to collect information on by-products deposited on the outer surfaces of the upper outer casing and the lower outer casing. The by-product signal deposited by the control unit drives the heating element and the vibration source to start, so as to remove the deposited by-products through vibration and heating.

[0017] Optionally, the butterfly valve structure for semiconductor devices further includes a main drive component and a connecting component. The main drive component is disposed outside the butterfly valve housing, and the connecting component is disposed on the butterfly valve housing and is used to connect the main drive component and the rotating part, so as to transmit the driving force of the main drive component to make the valve plate body rotate inside the butterfly valve housing, thereby adjusting the opening degree of the butterfly valve.

[0018] To achieve the above objectives, the present invention also provides a semiconductor device, including a process chamber, a vacuum pump, a vacuum switch valve, a plasma generator, and a butterfly valve structure for the semiconductor device. The process chamber and the vacuum pump are connected by a pipeline, the butterfly valve structure for the semiconductor device is disposed on the pipeline, the vacuum switch valve is disposed between the butterfly valve structure for the semiconductor device and the vacuum pump, and the plasma generator is disposed in the process chamber.

[0019] The beneficial effects of this invention are as follows: This invention utilizes an upper and lower outer casing to form a sealing layer that prevents byproducts from directly depositing on the valve plate. Combined with a vibration generator on the valve plate and an external vibration source, vibration is transmitted to the upper and lower outer casings to shake off byproducts from their outer surfaces. This design reduces contamination of the valve plate at its source, lowering the risk of altered physical properties, abnormal opening, and jamming due to deposits. Simultaneously, the vibration-based removal mechanism is direct and efficient, requiring no external heat conduction and avoiding uneven expansion caused by excessive internal and external temperature differences. While maintaining the butterfly valve's normal opening adjustment function and pressure control stability, it significantly improves equipment reliability and production efficiency, and reduces maintenance requirements. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of a semiconductor device in some embodiments of the present invention; Figure 2 This is a schematic diagram of the structure of a butterfly valve for semiconductor devices in some embodiments of the present invention; Figure 3 for Figure 2 The diagram shows the structure of the butterfly valve, including the valve plate body, the upper outer cover, and the lower outer cover. Figure 4 for Figure 2 The diagram shows the structure of the upper outer casing and the lower outer casing in the butterfly valve structure shown. Figure 5 for Figure 2 The diagram shows an enlarged view of position A in the butterfly valve structure shown.

[0021] Explanation of reference numerals in the attached figures: 1. Butterfly valve housing; 2. Main drive component; 3. Connecting component; 41. First groove; 42. Second groove; 43. Valve plate body; 44. Upper outer cover; 45. Lower outer cover; 5. Mounting groove; 6. Sealing component; 7. Vibration generating component; 8. Vibration source; 9. First cutting component; 10. First elastic component. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0023] To address the problems existing in the prior art, embodiments of the present invention provide a butterfly valve structure for semiconductor devices and a semiconductor device. The purpose is to form a sealing layer by setting an upper outer shell and a lower outer shell covering the valve plate body to prevent byproducts from being directly deposited on the valve plate body. Combined with a vibration generator set on the valve plate body and an external vibration source, vibration is transmitted to the upper outer shell and the lower outer shell to shake off byproducts on their outer surfaces.

[0024] In some embodiments, such as Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, the butterfly valve structure for semiconductor devices includes a butterfly valve housing 1, a valve plate body 43, a rotating part, an upper outer cover 44, a lower outer cover 45, a vibration generating element 7, and a vibration generating source 8.

[0025] In some embodiments, such as Figure 2 As shown, the valve plate body 43 is rotatably disposed in the inner cavity of the butterfly valve housing 1 via the rotating part.

[0026] In some embodiments, such as Figure 3As shown, the upper outer cover 44 and the lower outer cover 45 respectively cover the valve plate body 43 from the top and bottom, forming a sealing structure around the valve plate body 43 to prevent byproducts from depositing on it. The circumferential outer wall of the sealing structure has an adjustable gap between it and the inner wall of the butterfly valve housing 1. In this embodiment, the upper outer cover 44 and the lower outer cover 45 form a complete physical barrier (sealing structure) around the valve plate body 43, effectively preventing byproducts generated by process gases from directly depositing on the surface of the valve plate body 43. This protects the physical properties and movement accuracy of the valve plate body 43, fundamentally preventing valve plate rotation jamming or inaccurate opening caused by deposit thickening. Furthermore, this sealing structure has a deliberately maintained adjustable gap with the inner wall of the butterfly valve housing 1. This ensures that the presence of the upper outer cover 44 and the lower outer cover 45 does not hinder the core function of the valve plate body 43 in normally adjusting the valve opening through rotation, thus maintaining the valve's pressure control capability. This application transfers the easily contaminated interface from the precision valve plate body 43 to the replaceable or easily cleanable upper outer cover 44 and lower outer cover 45. While maintaining the normal adjustment function of the butterfly valve, this significantly improves the long-term operational stability and maintenance convenience of the equipment, solving the technical bottlenecks of poor cleaning effect and thermal stress risk associated with traditional external heating methods.

[0027] In some embodiments, such as Figure 2 and Figure 3 As shown, the vibration source 8 is located outside the butterfly valve housing 1, and the vibration generating element 7 is located on the valve plate body 43 and is in contact with the upper outer cover 44 and / or the lower outer cover 45. This allows the vibration generated by the vibration source 8 to be transmitted to the upper outer cover 44 and / or the lower outer cover 45 via the vibration generating element 7, thereby shaking off byproducts adhering to their outer surfaces. This embodiment precisely transmits vibration energy from the external excitation point (vibration source 8) to the target surfaces (upper outer cover 44 and lower outer cover 45) requiring cleaning via the vibration generating element 7, thus providing continuous vibration excitation to the upper outer cover 44 and lower outer cover 45 without interfering with the external structure of the valve plate body 43. This design places the easily damaged vibration generator 8 outside the butterfly valve housing 1, facilitating its installation, replacement, and maintenance. The vibration generator 7, located on the valve plate body 43, acts as a reliable "energy transmission rod," ensuring that vibration energy acts directly and stably on the outer casing, which serves as a "sacrificial layer," covering the valve plate. When byproducts accumulate on the outer surfaces of the upper outer casing 44 and the lower outer casing 45 due to obstruction, continuous or on-demand vibration energy effectively breaks the bond between the deposits and the surface, causing them to loosen, break, and be carried away by the airflow. This achieves online, in-situ, non-contact automatic cleaning, solving the problem that traditional methods struggle to directly clean critical parts of the valve plate and are susceptible to thermal stress.

[0028] In some embodiments, the vibration source 8 and the vibration generating element 7 can be a combination of a piezoelectric ceramic actuator and a transmission probe, or a combination of an electromagnetic vibrator and a rigid transmission rod. The vibration source 8 (such as a piezoelectric ceramic stack or an electromagnetic actuator) is fixed to the outside of the butterfly valve housing 1, and the mechanical vibration it generates is directly transmitted to the upper outer casing 44 and lower outer casing 45 in contact with it through the vibration generating element 7 (such as a probe or transmission rod) rigidly connected to the valve plate body 43. This design separates the functions of energy excitation and energy transfer, allowing the high-power or maintenance-required vibration source 8 to be placed outside the butterfly valve housing 1, which is easy to install and maintain, while the simple vibration generating element 7 serves as an internal medium, ensuring that the vibration energy acts efficiently and directionally on the upper outer casing 44 and lower outer casing 45, which act as a deposition "sacrificial layer." This achieves effective online cleaning while ensuring the sealing and reliability of the valve's core moving parts.

[0029] In some embodiments, such as Figure 4 As shown, both the upper outer cover 44 and the lower outer cover 45 include a circular covering portion and an annular covering portion that is connected to the edge of the circular covering portion and extends along the axial direction of the circular covering portion. The radius of the circular covering portion is larger than the radius of the valve plate body 43, and the sum of the axial heights of the annular covering portion of the upper outer cover 44 and the annular covering portion of the lower outer cover 45 is greater than the axial height of the valve plate body 43.

[0030] This embodiment achieves comprehensive, all-around protection of the valve plate body 43 through a specific geometric design, ensuring the integrity of the seal. The radius of the circular covering portion is larger than the radius of the valve plate body 43, allowing it to completely cover the radial projection range of the valve plate body 43, preventing byproducts from directly depositing from the "top" or "bottom" of the valve plate body 43. Furthermore, the annular covering portions of the upper outer shell 44 and the lower outer shell 45 extend axially, and the sum of their heights is greater than the axial height of the valve plate body 43. This further overlaps the radial coverage from the "side" (i.e., the circumferential sidewall) of the valve plate body 43, completely enclosing it within a closed cavity. This design ensures that regardless of the direction of byproducts, they will first deposit on the upper outer shell 44 and the lower outer shell 45, which act as "sacrificial layers," without contacting and contaminating the critical valve plate body 43 itself. This achieves ultimate physical isolation, providing a fundamental structural guarantee for the long-term, trouble-free operation of the valve plate body 43.

[0031] In some embodiments, such as Figure 4As shown, the annular covering portion is provided with a mounting groove 5 for the rotating part to pass through. By creating a dedicated mounting groove 5 for the rotating part to pass through on the annular covering portion, the structural continuity of the upper outer cover 44 and the lower outer cover 45 as an integral protective cover is ensured, while also allowing the rotating part to pass through the upper outer cover 44 and the lower outer cover 45 to achieve a reliable connection with the valve plate body 43, thus ensuring the normal rotational opening and closing function of the valve plate body 43. This design avoids mechanical interference caused by adding a protective cover and achieves compatibility between the protective function and the core transmission structure.

[0032] In some embodiments, the mounting groove 5 is disposed on the annular covering portion of the upper outer cover 44; in other embodiments, the mounting groove 5 is disposed on the annular covering portion of the lower outer cover 45; and in still other embodiments, the mounting groove 5 is disposed on both the annular covering portion of the upper outer cover 44 and the annular covering portion of the lower outer cover 45.

[0033] In some embodiments, such as Figure 3 As shown, a sealing element 6 is provided around the inner wall of the mounting groove 5. The inner diameter of the sealing element 6 is adapted to the outer diameter of the rotating part, so as to be fitted around the rotating part that passes through the mounting groove 5. By adding an annular sealing element 6 that is adapted to the outer diameter of the rotating part, the sealing problem at the mounting groove of the upper outer cover 44 and the lower outer cover 45 is effectively solved. This sealing element 6 is tightly fitted around the rotating part, filling the annular gap between the inner wall of the mounting groove 5 and the rotating part, thereby physically blocking the path of process gas and its by-products to enter the interior of the upper outer cover 44 and the lower outer cover 45 through this gap, directly contacting and depositing on the core component valve plate body 43. This not only further strengthens the overall sealing and protection effect of the upper outer cover 44 and the lower outer cover 45 on the valve plate body 43, preventing the "weakest link effect" of the protection function at the critical connection, but also ensures the flexibility and reliability of the rotating part during the rotation adjustment process, so that it is not affected by the intrusion and jamming of external particles, and improves the long-term operational stability and protection integrity of the butterfly valve structure.

[0034] In some embodiments, a plurality of vibration generating elements 7 are provided, with at least one vibration generating element 7 respectively provided on the circular covering portion of the upper outer shell 44, the annular covering portion of the upper outer shell 44, the circular covering portion of the lower outer shell 45, and the annular covering portion of the lower outer shell 45. Through a multi-point, balanced vibration energy distribution strategy, efficient and uniform cleaning of the entire surface of the outer shell is achieved. By providing at least one vibration generating element 7 in each of the four key areas—the circular covering portions of the upper outer shell 44 and the lower outer shell 45 (covering the top and bottom of the valve plate body 43) and the annular covering portions of the upper outer shell 44 and the lower outer shell 45 (covering the sides of the valve plate body 43)—it can be ensured that vibration energy can be transmitted simultaneously or collaboratively to the entire outer shell structure from multiple positions and different angles. This layout effectively avoids the problem of poor cleaning effect in local areas caused by the attenuation or uneven transmission of vibration energy at a single point. It ensures that all inner surfaces of the outer casing (the surfaces opposite to the valve plate body 43) can receive sufficient vibration excitation, thereby ensuring that byproducts attached to its outer surface can be shaken off completely and evenly, improving the thoroughness and reliability of cleaning, and ensuring the continuous effectiveness of the protective barrier.

[0035] In some embodiments, such as Figure 4 As shown, both the circular covering portion of the upper outer shell 44 and the circular covering portion of the lower outer shell 45 are provided with a plurality of first grooves 41. The first grooves 41 extend radially and penetrate the annular covering portion to physically block the continuous deposition of by-products in the circumferential direction of the circular covering portion. By providing first grooves 41 penetrating the annular covering portion on the circular covering portion, the continuous deposition pattern of by-products on the protective surface is actively disrupted and segmented. When by-products attempt to grow continuously in the circumferential direction (i.e., the direction of concentric rings) of the circular covering portion (especially the area where the edge connects to the annular covering portion), these radially extending first grooves 41 constitute physical blocks and gaps, preventing the deposits from forming a complete and firm continuous annular layer. This design significantly reduces the overall adhesion strength and structural integrity of the deposits in the circumferential direction. When the subsequent vibration generator 7 transmits vibration energy, it is easier for by-products deposited in these discontinuous areas to break and fall off from the edge or junction of the grooves due to stress concentration, thereby greatly improving the cleaning effect and effectively preventing the continuous accumulation and thickening of deposits.

[0036] In some embodiments, the first grooves 41 are arranged at equal intervals around the center of the circular covering portion, forming multiple radially extending uniform grooves on the circular covering portion and its connected annular covering portion. The advantage of this equally spaced radial arrangement is that it creates a series of regular, uniform physical blocking lines in the circumferential direction, continuously dividing the protective surface from the center to the outer edge. This arrangement ensures that regardless of the direction of by-product flow, the continuity of the deposited film in the circumferential direction is periodically interrupted at multiple fixed locations, preventing the deposit from forming a complete annular film. The uniform spacing also avoids stress or uneven deposition thickness, making it easier to induce concentrated cracking of the deposit at the groove edges when vibration is transmitted, thereby improving the overall cleaning efficiency and consistency.

[0037] In some embodiments, such as Figure 4 As shown, both the circular covering portion of the upper outer shell 44 and the circular covering portion of the lower outer shell 45 are provided with a plurality of second grooves 42. These second grooves 42 extend circumferentially along the circular covering portion and communicate with the first grooves 41 to physically block the radial deposition continuity of by-products on the circular covering portion. This embodiment, by adding circumferentially extending second grooves 42 in a dimension orthogonal to the first groove 41, forms a grid-like blocking structure on the surface of the protective outer shell. These circumferential second grooves 42 cut off the path of continuous radial (from center to edge) growth of by-products on the circular covering portion, preventing the deposits from forming a coherent whole on each radial "track." This grid-like design, combined with the radial first grooves 41, physically cuts and discretizes the deposition area on the outer shell surface into multiple isolated small blocks, significantly disrupting the continuity, adhesion, and structural strength of the deposits on the plane. This makes it easier for deposits to break, warp, and fall off from the edges of the "grid lines" formed by the grooves when removing byproducts attached to the surface by vibration. This significantly improves the effectiveness and thoroughness of vibration cleaning and prevents byproducts from adhering firmly in flakes or lumps.

[0038] In some embodiments, the second groove 42 has a ring-shaped structure, and the arrangement of the second grooves 42 can be such that they are evenly distributed radially along the circular covering portion, that is, from the region near the center to the region near the edge, multiple second grooves are arranged with different radii at the same center. This concentric ring-shaped evenly spaced arrangement can form multiple uniform physical barrier lines in the radial direction of the circular covering portion, effectively cutting off the path of continuous deposition of by-products in the radial direction. Combined with the first groove 41 described above, these circumferential second grooves 42 together form a crisscrossing grid-like trench array on the surface of the outer casing. This design not only further weakens the structural continuity of the deposits in the radial direction, making it difficult for them to form a large, firmly attached layer, but also, under vibration excitation, the edges of the grid-like trenches are more prone to stress concentration, causing the deposits to break and peel off into small fragments, thereby greatly enhancing the efficiency and thoroughness of vibration cleaning and preventing the overall accumulation of by-products on the surface of the outer casing.

[0039] In other embodiments, the second groove 42 has an arc-shaped structure, and at least one arc-shaped second groove 42 is provided between each two adjacent first grooves 41. When a plurality of arc-shaped second grooves 42 are provided between two adjacent first grooves 41, the plurality of arc-shaped second grooves 42 are arranged radially at intervals along the circular covering portion, and the length of the groove cavity gradually increases towards the edge of the circular covering portion.

[0040] In some embodiments, such as Figure 3 and Figure 4 As shown, the depth of the first groove 41 increases from the center of the circular covering towards the edge to guide the discharge of byproducts detached by vibration. Specifically, the bottom of the first groove 41 is a wedge-shaped or sloping structure with a depth increasing from the center to the edge, creating a guiding channel that facilitates the discharge of detached material. When vibration loosens and detaches byproducts attached to the surface of the outer casing, these detached particles or debris fall into the first groove 41. Because the depth of the first groove 41 gradually increases from the center to the edge, the bottom of the first groove 41 forms a slope that slopes from the inside to the outside. Under the action of the vibration source 8 transmitting vibration to the upper outer cover 44 and lower outer cover 45 through the vibration generator 7, or under the action of airflow (especially vacuum pumping or process gas flow) during equipment operation, this slope can effectively guide and accelerate the movement of the detached material along the first groove 41 towards the outer edge of the circular covering part, and finally be carried by the high-speed airflow and discharged outside the butterfly valve structure, thereby realizing the continuous automation of detachment and discharge, and avoiding the detached material from being retained, accumulated or even re-flying in the first groove 41 or inside the valve body, causing pollution.

[0041] In some embodiments, such as Figure 5As shown, the butterfly valve structure for semiconductor devices also includes a first cutting element 9 and a first elastic element 10. One end of the first elastic element 10 is fixedly disposed on the inner wall of the first groove 41, and the other end is connected to the first cutting element 9 disposed in the first groove 41, so that the first cutting element 9 moves within the first groove 41 under the action of vibration force and the expansion and contraction force of the first elastic element 10. This configuration adds an active physical cutting and auxiliary cleaning function to the vibration cleaning mechanism. When the vibration generator 7 transmits vibration to the outer casing, the first cutting element 9 in the first groove 41 will not only vibrate with the overall structure, but also generate additional, directional reciprocating or oscillating movements within the groove due to its connection with the first elastic element 10 (which generates expansion and contraction force due to vibration with the overall structure). This activity gives the first cutting element 9 a dynamic, "micro-blade"-like function, which can actively cut into and destroy the by-product films or lumps deposited in and around the first groove 41, significantly accelerating the rupture of deposits and the peeling process from the substrate surface. This not only enhances the removal effect on existing deposits, but also effectively addresses firmly attached deposits that are difficult to shake off completely by vibration alone, thereby further improving the thoroughness and efficiency of cleaning and ensuring the continued function of the first groove 41 as a "physical barrier" channel.

[0042] In some embodiments, the first cutting element 9 can be a microblade with a sharp edge, a toothed scraper, or a wedge. The first cutting element 9 is typically made of a high-strength, wear-resistant material (such as tungsten carbide, ceramic, or cemented carbide), and its dimensions are matched to the width and depth of the first groove 41, allowing it to move within a limited range in the radial or specific direction within the first groove 41. Its sharp edge or toothed design is intended to directly contact the deposited byproducts, and driven by vibration and the first elastic element 10, it can cut, scrape, or pry deposits adhering to the inner wall and edges of the first groove 41, thereby physically cutting and breaking larger deposited films or lumps into smaller fragments, greatly facilitating the removal of deposits. This design enhances the active removal capability of stubborn deposits and is an effective complement to vibration cleaning mechanisms.

[0043] In some embodiments, the first elastic element 10 can be a miniature helical spring, an elastic bellows, or a sheet spring. Such elastic elements are typically made of metal alloys (such as stainless steel or spring steel) or special engineering plastics (such as polyimide) with good fatigue resistance and a certain degree of corrosion resistance. One end is fixedly connected to the inner wall (such as the bottom or side wall) of the first groove 41, and the other end is reliably connected to the first cutting element 9. During vibration transmission, the first elastic element 10 can absorb, store, and convert vibration energy into its own periodic expansion, contraction, bending, or torsional deformation, and then release this deformation energy to drive the first cutting element 9 connected to it to generate directional reciprocating, oscillating, or high-frequency fluttering motion within the first groove 41. This motion not only amplifies the range of motion and impact force of the first cutting element 9, but its elastic buffering characteristics also make the first cutting element 9 more adaptable when impacting the wall of the first groove 41, thereby more efficiently destroying and removing deposits and protecting the structure from rigid impact damage.

[0044] In some embodiments, the butterfly valve structure for semiconductor devices further includes a second cutting member and a second elastic member; one end of the second elastic member is fixedly disposed on the inner wall of the second groove 42, and the other end is connected to the second cutting member disposed in the second groove 42, so that the second cutting member moves within the second groove 42 under the action of vibration force and the expansion and contraction force of the second elastic member. An active mechanical cleaning function similar to that of the aforementioned first groove 41 is also introduced within the circumferentially extending second groove 42. Corresponding to the movement of the first cutting member 9 in the first groove 41, the second cutting member disposed in the second groove 42 can reciprocate or oscillate in the circumferential direction under the action of vibration and the second elastic member (the second elastic member vibrates with the overall structure and generates expansion and contraction force). This design is specifically designed to target and disrupt the continuous deposition layer of by-products formed radially in the circular coating. When the deposits attempt to extend along the radial path, the second cutting member moving within the second groove 42 can, like a "micro-scraper," laterally cut into and sever these radial deposits, dividing and breaking them. This enhances the gridded physical barrier effect on the outer casing surface deposits in two dimensions (radial and circumferential) and works synergistically with vibration cleaning, so that no matter which direction the deposits grow, they can be effectively destroyed by the corresponding cutting elements, thereby further improving the thoroughness of cleaning and the ability to remove stubborn deposits.

[0045] In some embodiments, the structures of the second cutting element and the second elastic element can refer to a similar design to the first cutting element and the first elastic element, but need to be adapted to their movement within the second groove 42. The structure of the second cutting element is typically a miniature arc-shaped blade, toothed scraper, or wedge-shaped block adapted to the circumferentially extending groove, allowing it to reciprocate or oscillate within the second groove along the groove's extension direction (i.e., the circumferential direction) with a limited amplitude. The second elastic element can be a miniature helical spring, a sheet spring, or an elastic bellows, with one end fixed to the inner wall (such as the sidewall or bottom of the groove) of the second groove 42, and the other end connected to the second cutting element. Its function is to convert vibrational energy into an elastic deformation force that drives the second cutting element to move circumferentially. This combination enables the second cutting element to produce a "scraping" or "cutting" motion within the second groove, specifically designed to disrupt the radially continuously deposited by-product layer, thereby cooperating with the first cutting element 9 in the radial groove to achieve active, grid-like removal of the deposits.

[0046] In some embodiments, heating elements are provided inside both the upper outer casing 44 and the lower outer casing 45 to reduce or remove the deposition of by-products on the outer surfaces of the upper outer casing 44 and the lower outer casing 45 by heating them. By directly providing heating elements (such as electric heating wires, heating films, etc.) inside the upper outer casing 44 and the lower outer casing 45, direct and uniform heating of the outer casing body, which serves as a carrier for by-product deposition, can be achieved. This internal heating method can effectively increase the overall temperature of the outer casing, especially its outer surface temperature. The core benefits are: on the one hand, heat can reduce the physical adhesion and chemical bonding force of by-products on the heated surface, making them easier to detach under subsequent vibration; on the other hand, continuous and controllable heating itself can inhibit or slow down the condensation and deposition rate of process gas by-products on the cold surface of the outer casing, achieving "preventive" removal. Complementing the mechanical impact of the vibration generator 7, this combination of "thermal and vibration" significantly enhances the removal effect of by-products, especially suitable for stubborn deposits with high viscosity or requiring energy-assisted desorption, further improving the long-term reliability of the butterfly valve.

[0047] In some embodiments, the butterfly valve structure for semiconductor devices further includes a byproduct sensor and a control unit. The heating element, the vibration source 8, and the byproduct sensor are all connected to the control unit. The byproduct sensor is used to collect information on byproducts deposited on the outer surfaces of the upper outer cover 44 and the lower outer cover 45. The control unit controls the heating element and the vibration source 8 to start according to the information on the deposited byproducts, so as to remove the deposited byproducts by heating and vibration.

[0048] This embodiment achieves intelligent, on-demand cleaning control based on real-time monitoring, thereby optimizing energy consumption and equipment operating efficiency while efficiently removing by-products. By adding by-product sensors (such as optical sensors, acoustic sensors, or thickness monitoring probes) to collect information on the thickness, area, or composition of deposits on the outer casing surface in real time, the control unit (such as a PLC or dedicated controller) can automatically trigger and coordinate the start and stop of the heating element and vibration source 8 according to preset logic algorithms (such as reaching a threshold or a specific deposition mode). This design transforms passive or periodic maintenance into proactive, precise, responsive cleaning: vibration and heating are only activated for removal when sufficient deposits are detected, avoiding continuous energy waste and unnecessary thermal and mechanical stress on the valve body structure. At the same time, the feedback information provided by the sensors also facilitates predictive maintenance and process monitoring, improving the automation level and operational reliability of the equipment.

[0049] In some embodiments, such as Figure 2 As shown, the butterfly valve structure for semiconductor devices also includes a main drive component 2 and a connecting component 3. The main drive component 2 is disposed outside the butterfly valve housing 1, and the connecting component 3 is disposed on the butterfly valve housing 1 and is used to connect the main drive component 2 and the rotating part, so as to transmit the driving force of the main drive component 2 to make the valve plate body 43 rotate inside the butterfly valve housing 1, thereby adjusting the opening degree of the butterfly valve.

[0050] To address the problems existing in the prior art, embodiments of the present invention also provide a semiconductor device, such as... Figure 1 As shown, the device includes a process chamber, a vacuum pump, a vacuum switch valve, a plasma generator, and a butterfly valve structure for semiconductor equipment. The process chamber and the vacuum pump are connected by a pipeline. The butterfly valve structure for semiconductor equipment is located on the pipeline. The vacuum switch valve is located between the butterfly valve structure for semiconductor equipment and the vacuum pump. The plasma generator is located inside the process chamber.

[0051] This embodiment integrates an innovative butterfly valve structure for semiconductor devices into the vacuum pumping path of a plasma processing equipment, forming a highly efficient, stable, and self-cleaning key subsystem. Specifically, the butterfly valve structure is positioned on the pipe connecting the process chamber and the pump, enabling precise control of the pressure and airflow within the process chamber—fundamental for maintaining a stable plasma process (excited by plasma generators). Simultaneously, a pumping switch valve is installed between the butterfly valve structure and the pump. This allows the pumping pump to be shut off when maintenance operations such as vibration or heating cleaning of the butterfly valve structure are required, isolating the pump. This allows maintenance of the butterfly valve to be performed without disrupting the main vacuum of the process chamber, significantly improving equipment uptime and maintenance convenience. Overall, this layout fully leverages the advantages of the novel butterfly valve structure—"protective valve plate, active cleaning, and stable pressure control"—improving the reliability, process stability, and production efficiency of the plasma processing equipment at the system level.

[0052] In some embodiments, the semiconductor equipment can be a deposition equipment, an etching equipment, or a resist stripping equipment. Such equipment typically uses plasma in its core process chamber, generating a large number of byproducts. Integrating the butterfly valve structure with active cleaning capabilities (vibration and heating) provided by this invention into the vacuum extraction pipeline of such equipment can effectively solve the common problem of valve plate jamming and pressure control inaccuracy caused by byproduct deposition on traditional pressure-controlled butterfly valves. This significantly improves the stability and uniformity of the deposition, etching, or resist stripping processes, extends equipment continuous operating time, and reduces downtime due to maintenance.

[0053] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A butterfly valve structure for semiconductor devices, characterized in that, It includes a butterfly valve housing, valve plate body, rotating part, upper outer cover, lower outer cover, vibration generating component, and vibration source; The valve plate body is rotatably disposed within the inner cavity of the butterfly valve housing via the rotating part; The upper outer cover and the lower outer cover are respectively installed on the valve plate body from the top and bottom of the valve plate body to form a sealing structure on the periphery of the valve plate body to prevent by-products from being deposited on the valve plate body. The circumferential outer wall of the sealing structure has a gap between it and the inner wall of the butterfly valve housing to adjust the butterfly valve opening. The vibration source is located outside the butterfly valve housing, and the vibration generating element is located on the valve plate body and is in contact with the upper outer cover and / or the lower outer cover, so as to transmit the vibration generated by the vibration source to the upper outer cover and / or the lower outer cover through the vibration generating element, thereby shaking off the by-products attached to their outer surfaces.

2. The butterfly valve structure for semiconductor devices according to claim 1, characterized in that, Both the upper outer cover and the lower outer cover include a circular covering portion and an annular covering portion that is connected to the edge of the circular covering portion and extends along the axial direction of the circular covering portion. The radius of the circular covering portion is greater than the radius of the valve plate body, and the sum of the axial heights of the annular covering portion of the upper outer cover and the annular covering portion of the lower outer cover is greater than the axial height of the valve plate body.

3. The butterfly valve structure for semiconductor devices according to claim 2, characterized in that, The annular covering portion is provided with a mounting groove for the rotating portion to pass through.

4. The butterfly valve structure for semiconductor devices according to claim 3, characterized in that, The inner wall of the mounting groove is provided with a sealing element, the inner diameter of which is adapted to the outer diameter of the rotating part, so as to be sleeved on the rotating part that passes through the mounting groove.

5. The butterfly valve structure for semiconductor devices according to claim 2, characterized in that, The vibration generating element is provided in a plurality of parts, and at least one vibration generating element is provided in the circular covering part of the upper outer shell, the annular covering part of the upper outer shell, the circular covering part of the lower outer shell, and the annular covering part of the lower outer shell.

6. The butterfly valve structure for semiconductor devices according to claim 2, characterized in that, Both the circular covering portion of the upper outer shell and the circular covering portion of the lower outer shell are provided with a plurality of first grooves. The first grooves extend radially and penetrate the annular covering portion to physically block the continuous deposition of by-products in the circumferential direction of the circular covering portion.

7. The butterfly valve structure for semiconductor devices according to claim 6, characterized in that, Both the circular covering portion of the upper outer shell and the circular covering portion of the lower outer shell are provided with a plurality of second grooves. The plurality of second grooves extend circumferentially along the circular covering portion and communicate with the first grooves to physically block the continuous deposition of by-products in the radial direction of the circular covering portion.

8. The butterfly valve structure for semiconductor devices according to claim 6, characterized in that, The depth of the first groove increases from the center of the circular covering portion toward the edge, so as to guide the discharge of by-products after vibration.

9. The butterfly valve structure for semiconductor devices according to claim 7, characterized in that, It also includes a first cutting element and a first elastic element; One end of the first elastic member is fixedly disposed on the inner wall of the first groove, and the other end is connected to the first cutting member disposed in the first groove, so that the first cutting member moves in the first groove under the action of vibration force and the stretching deformation force of the first elastic member.

10. The butterfly valve structure for semiconductor devices according to claim 7, characterized in that, It also includes a second cutting element and a second elastic element; One end of the second elastic member is fixedly disposed on the inner wall of the second groove, and the other end is connected to the second cutting member disposed in the second groove, so that the second cutting member moves in the second groove under the vibration force and the expansion and contraction force of the second elastic member.

11. The butterfly valve structure for semiconductor devices according to claim 1, characterized in that, Heating elements are provided inside both the upper outer cover and the lower outer cover to reduce or remove the deposition of by-products on the outer surfaces of the upper outer cover and the lower outer cover by heating the upper outer cover and the lower outer cover.

12. The butterfly valve structure for semiconductor devices according to claim 11, characterized in that, It also includes a by-product sensor and a control unit. The heating element, the vibration source and the by-product sensor are all connected to the control unit. The by-product sensor is used to collect information on the by-products deposited on the outer surfaces of the upper outer shell and the lower outer shell. The control unit controls the heating element and the vibration source to start according to the information on the deposited by-products, so as to remove the deposited by-products by heating and vibration.

13. The butterfly valve structure for semiconductor devices according to claim 1, characterized in that, It also includes a main drive component and a connecting component. The main drive component is located outside the butterfly valve housing, and the connecting component is located on the butterfly valve housing and is used to connect the main drive component and the rotating part, so as to transmit the driving force of the main drive component to make the valve plate body rotate inside the butterfly valve housing, thereby adjusting the opening degree of the butterfly valve.

14. A semiconductor device, characterized in that, The device includes a process chamber, a vacuum pump, a vacuum switch valve, a plasma generator, and a butterfly valve structure for semiconductor equipment as described in any one of claims 1 to 13. The process chamber and the vacuum pump are connected by a pipeline. The butterfly valve structure for semiconductor equipment is disposed on the pipeline. The vacuum switch valve is disposed between the butterfly valve structure for semiconductor equipment and the vacuum pump. The plasma generator is disposed in the process chamber.

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