Focused ion beam apparatus

Abstract

To provide a focused ion beam device capable of exhausting a gas remaining in a nozzle.SOLUTION: A focused ion beam device 100 irradiates a sample S with an ion beam to process the sample S, and includes a nozzle 42 which blows a gas 2 for forming a deposition film to the sample S from an air outlet 422, and a tank for supplying the gas 2 into the nozzle 42, wherein the nozzle 42 has an exhaust hole 426 for exhausting the gas 2 in the nozzle 42.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a focused ion beam apparatus.

Background Art

[0002] In a focused ion beam apparatus, a sample can be processed by scanning the surface of the sample with a focused ion beam. Further, in a focused ion beam apparatus, a deposition film can be formed on the surface of the sample by irradiating the sample with an electron beam or an ion beam while spraying a compound gas near the surface of the sample. In a cryo-focused ion beam apparatus (Cryo-FIB) for processing a cooled sample, a deposition film can be formed on the surface of the sample only by spraying a compound gas on the sample without irradiating the sample with an electron beam or an ion beam.

[0003] Patent Document 1 discloses a focused ion beam apparatus including a gas gun for spraying a compound gas on a sample. The gas gun includes a gas tank for storing a gas source and a gas nozzle. When forming a deposition film, the gas nozzle approaches from a retracted position to a height of several hundred micrometers from the processing point of the sample by an air cylinder. A gas sealing plug is provided in the gas tank, and the gas can be sprayed on the sample by opening the gas sealing plug.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In such a gas gun, even when the gas tank is closed with a gas sealing plug, gas remains in the gas nozzle.

Means for Solving the Problems

[0006] One embodiment of the focused ion beam apparatus according to the present invention is: A focused ion beam apparatus for processing a sample by irradiating it with an ion beam, A nozzle that blows gas from the outlet onto the sample to form a deposition film, A tank that supplies gas into the nozzle, A housing tube for housing the nozzle, A first O-ring and a second O-ring airtight seal between the nozzle and the housing tube, and divide the space between the nozzle and the housing tube into a sealed chamber and an exhaust chamber, A movement mechanism that allows the nozzle to move between a film-forming position in which gas can be blown onto the sample from the outlet and a retracted position different from the film-forming position, Includes, The nozzle has an exhaust hole for exhausting the gas inside the nozzle. The housing tube has a through hole, one opening of which is connected to the exhaust chamber and the other opening of which is connected to the sample chamber in which the sample is placed. When the nozzle is positioned at the film deposition location, the exhaust hole communicates with the sealed chamber. When the nozzle is positioned in the retracted position, the exhaust hole communicates with the through hole via the exhaust chamber. The direction in which the other opening faces is different from the direction in which the air outlet faces.

[0007] In such a focused ion beam system, the nozzle has an exhaust hole, allowing residual gas inside the nozzle to be evacuated. [Brief explanation of the drawing]

[0008] [Figure 1] A diagram showing an example of the configuration of a focused ion beam apparatus according to the first embodiment. [Figure 2] A schematic cross-sectional view showing a gas injection device. [Figure 3] A diagram illustrating the operation of a focused ion beam apparatus according to the first embodiment. [Figure 4] A diagram illustrating the operation of a focused ion beam apparatus according to the first embodiment. [Figure 5] A schematic cross-sectional view showing a modified example of a focused ion beam apparatus according to the first embodiment. [Figure 6] A schematic cross-sectional view showing a modified example of a focused ion beam apparatus according to the first embodiment. [Figure 7] A diagram showing an example of the configuration of a focused ion beam apparatus according to the second embodiment. [Figure 8]Cross-sectional view schematically showing a gas injection device. [Figure 9] Diagram for explaining the operation of a focused ion beam apparatus according to the second embodiment. [Figure 10] Diagram for explaining the operation of a focused ion beam apparatus according to the second embodiment. [Figure 11] Diagram showing an example of the configuration of a focused ion beam apparatus according to the third embodiment. [Figure 12] Diagram showing an example of the configuration of a focused ion beam apparatus according to the fourth embodiment. [Figure 13] Diagram for explaining the operation of a focused ion beam apparatus according to the fourth embodiment. [Figure 14] Diagram for explaining the operation of a focused ion beam apparatus according to the fourth embodiment. [Figure 15] Diagram showing an example of the configuration of a focused ion beam apparatus according to the fifth embodiment. [Figure 16] Diagram for explaining the operation of a focused ion beam apparatus according to the fifth embodiment. [Figure 17] Diagram for explaining the operation of a focused ion beam apparatus according to the fifth embodiment.

Mode for Carrying Out the Invention

[0009] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. Note that the embodiments described below do not unduly limit the content of the present invention described in the claims. Also, not all of the configurations described below are essential constituent elements of the present invention.

[0010] 1. First Embodiment 1.1. Focused Ion Beam Apparatus First, a focused ion beam apparatus according to the first embodiment will be described with reference to the drawings. FIG. 1 is a diagram showing an example of the configuration of a focused ion beam apparatus 100 according to the first embodiment. D

[0011] As shown in Figure 1, the focused ion beam apparatus 100 includes a scanning electron microscope (SEM) tube 10, a focused ion beam (FIB) tube 20, a sample stage 30, a cooling mechanism 32, and a gas injection device 40. The focused ion beam apparatus 100 is equipped with the SEM tube 10 and the FIB tube 20, and can process and observe a sample S.

[0012] The SEM tube 10 irradiates the sample S with an electron beam. The SEM tube 10 forms and scans an electron probe. The SEM tube 10 includes an electron gun that emits an electron beam, and an electron optical system for focusing the electron beam to form an electron probe and scanning the formed electron probe. The electron beam emitted from the electron gun travels along the optical axis AS of the SEM tube 10 and irradiates the sample S. In the focused ion beam apparatus 100, an SEM image can be obtained by scanning the sample S with the electron probe and detecting electrons emitted from the sample S with an electron detector (not shown).

[0013] The FIB tube 20 irradiates the sample S with an ion beam. The FIB tube 20 forms and scans the ion beam. The FIB tube 20 includes an ion gun that emits an ion beam and an ion optical system for focusing the ion beam and scanning the focused ion beam. The ion beam emitted from the ion gun travels along the optical axis AF of the FIB tube 20 and irradiates the sample S. In the focused ion beam apparatus 100, the sample S can be processed by scanning the sample S with the focused ion beam.

[0014] The sample stage 30 supports the sample S. The sample S, supported by the sample stage 30, is placed in the sample chamber 102. The sample chamber 102 is evacuated by the exhaust system 103 and maintained in a vacuum (reduced pressure) state. The exhaust system 103, although not shown in the figure, includes a vacuum evacuation device, an exhaust pipe connecting the sample chamber 102 and the vacuum evacuation device, and a valve.

[0015] In the focused ion beam apparatus 100, the sample S is processed and observed at the intersection P0 of the optical axis AS and optical axis AF. The sample stage 30 includes a moving mechanism for moving the sample S in the horizontal and vertical directions and a tilting mechanism for tilting the sample S. The sample stage 30 is a sample holder that can be used in conjunction with the focused ion beam apparatus 100 and the transmission electron microscope. - It may be configured to support.

[0016] The cooling mechanism 32 cools the sample stage 30. By cooling the sample stage 30, the sample S can be cooled. The cooling mechanism 32 includes, for example, a tube for carrying gas and a refrigerant tank for cooling the gas. The cooling mechanism 32 cools the sample stage 30 by, for example, flowing gas cooled in a refrigerant tank filled with liquid nitrogen through a tube thermally connected to the sample stage 30. Alternatively, the cooling mechanism 32 may include, for example, a refrigerant tank and a thermal conductive wire that thermally connects the refrigerant tank and the sample stage 30. By connecting the refrigerant tank and the sample stage 30 with a thermal conductive wire, the sample stage 30 can be cooled.

[0017] Thus, the focused ion beam apparatus 100 is equipped with a cooling mechanism 32 for cooling the sample stage 30, and can be used as a cryo-FIB (Cryo-FIB) that allows processing while cooling the sample S. Therefore, the focused ion beam apparatus 100 can process and observe frozen biological samples, battery materials, and other materials.

[0018] The gas injection apparatus 40 blows a gas onto the sample S to form a deposition film. When forming a deposition film on a sample S at room temperature, the sample S is irradiated with an electron beam or ion beam while the gas is blown onto it with the gas injection apparatus 40. Secondary electrons generated in the sample S by the irradiation of the electron beam or ion beam decompose the gas into a deposition material and gaseous components. As a result, the deposition material adheres to the sample S, and a deposition film can be formed on the sample S. Alternatively, when forming a deposition film on a cooled sample S, the sample S is irradiated with gas without an electron beam or ion beam. The gas adheres to the surface of the cooled sample S. As a result, a deposition film can be formed.

[0019] 1.2. Gas Injection System Figure 2 is a schematic cross-sectional view of the gas injection apparatus 40. As shown in Figure 2, the gas injection apparatus 40 includes a nozzle 42, a reservoir tank 44, a valve 45, a storage tube 46, and a moving mechanism 48. Figure 2 illustrates the state in which gas 2 is being blown onto the sample S by the nozzle 42.

[0020] The reservoir tank 44 contains a liquid or solid gas source 4. Examples of gas sources 4 include carbon compounds, tungsten compounds, or platinum compounds. The gas 2 generated from the gas source 4 is supplied from the reservoir tank 44 through a valve 45 into the nozzle 42. The gas 2 is used to form a deposition film.

[0021] A valve 45 is provided between the nozzle 42 and the reservoir tank 44. By opening the valve 45, gas 2 can be supplied into the nozzle 42 from the supply port 424 of the nozzle 42. As a result, gas 2 is blown out from the outlet 422 of the nozzle 42. Conversely, by closing the valve 45, the supply of gas 2 into the nozzle 42 can be stopped. The valve 45 is opened and closed, for example, by the power of an air cylinder. The configuration of the valve 45 is not particularly limited.

[0022] The nozzle 42 is a cylindrical component for blowing gas 2 onto the sample S from the outlet 422. In the focused ion beam apparatus 100, by using a thin, long nozzle 42, the reservoir tank 44 can be placed at a distance from the sample S. For example, in the example shown in Figure 2, the reservoir tank 44 is located outside the sample chamber 102. This allows for easy replenishment of the gas source 4 in the reservoir tank 44.

[0023] The nozzle 42 is connected to the reservoir tank 44 via the valve 45. A supply port 424 is provided at the rear end of 42, and gas 2 is supplied from the reservoir tank 44 into the nozzle 42 through the supply port 424. The supply port 424 is opened and closed by a valve 45.

[0024] An outlet 422 is provided at the tip of the nozzle 42. Gas 2 supplied from a supply port 424 at the rear end of the nozzle 42 passes through the inside of the nozzle 42 and is blown out from the outlet 422 at the tip of the nozzle 42.

[0025] The nozzle 42 is provided with exhaust holes 426 for exhausting the gas 2 inside the nozzle 42. The exhaust holes 426 are located between the outlet 422 and the supply port 424. The exhaust holes 426 penetrate the side wall of the nozzle 42. In the illustrated example, there are two exhaust holes 426, but the number of exhaust holes 426 is not particularly limited. The diameter of the exhaust holes 426 is larger than the diameter of the outlet 422.

[0026] The exhaust hole 426 communicates with the gap 6 between the nozzle 42 and the housing tube 46. When the nozzle 42 is positioned in the film-forming position as shown in Figure 2, the exhaust hole 426 communicates with the sealed chamber 6a formed by the O-rings 402 and 404. The sealed chamber 6a is the space between the O-rings 402 and 404. The O-rings 402 and 404 each provide an airtight seal between the nozzle 42 and the housing tube 46.

[0027] The housing tube 46 houses the nozzle 42. The housing tube 46 is a cylindrical component with a larger diameter than the nozzle 42. The nozzle 42 can move within the housing tube 46.

[0028] Two grooves for O-rings are formed in the inner wall of the housing tube 46. One groove is fitted with O-ring 402, and the other groove is fitted with O-ring 404. O-ring 402 is located closer to the tip of the nozzle 42 than O-ring 404. The nozzle 42 can slide within the housing tube 46 via O-rings 402 and 404.

[0029] The gap 6 between the nozzle 42 and the housing tube 46 is divided into a sealed chamber 6a and an exhaust chamber 6b by O-rings 402 and 404. The sealed chamber 6a is the space between O-rings 402 and 404. The exhaust chamber 6b constitutes an exhaust path for exhausting the gas 2 inside the nozzle 42. The exhaust chamber 6b communicates with a through-hole 460 that penetrates the side wall of the housing tube 46. The exhaust chamber 6b is the gap 6 on the rear end side of the nozzle 42, beyond the O-ring 404.

[0030] The housing tube 46 is provided with through-holes 460. In the illustrated example, there are two through-holes 460, but the number of through-holes 460 is not particularly limited. The diameter of the through-holes 460 is larger than the diameter of the outlet 422. Also, the diameter of the through-holes 460 is larger than the diameter of the exhaust hole 426. One opening of the through-holes 460 is connected to the exhaust chamber 6b, and the other opening of the through-holes 460 is connected to the sample chamber 102.

[0031] The housing tube 46 is connected to the flange 47. The flange 47 is fitted into a hole provided in the housing 104 that constitutes the sample chamber 102. The space between the flange 47 and the housing 104 is hermetically sealed by an O-ring 106.

[0032] The moving mechanism 48 supports the nozzle 42 so that it can move between a film deposition position and a retracted position. The film deposition position is near the sample S and is a position from which gas 2 can be blown onto the sample S from the outlet 422. The retracted position is a different position from the film deposition position and is located away from the sample S. The distance between the retracted position and the sample S is greater than the distance between the film deposition position and the sample S.

[0033] The moving mechanism 48 moves the nozzle 42. The moving mechanism 48 is, for example, an air cylinder The nozzle 42 is moved linearly along its central axis. The configuration of the moving mechanism 48 is not particularly limited as long as it can move the nozzle 42 between the film deposition position and the retracted position. The moving mechanism 48 is, for example, a single-axis actuator including a drive device such as an air cylinder or motor and a power transmission mechanism such as a linear guide. The moving mechanism 48 may also be a mechanism for manually moving the nozzle 42.

[0034] 1.3. Operation Figures 3 and 4 are diagrams illustrating the operation of the focused ion beam apparatus 100. Figure 3 shows the nozzle 42 in the film deposition position. Figure 4 shows the nozzle 42 in the retracted position.

[0035] In the focused ion beam apparatus 100, the nozzle 42 can be moved between a deposition position and a retracted position by a movement mechanism 48. When depositing a deposition film on a sample S, the nozzle 42 is positioned in the deposition position. This allows the nozzle 42's outlet 422 to be positioned near the sample S. By opening the valve 45 in the deposition position, gas 2 is blown out from the outlet 422, allowing a deposition film to be deposited on the sample S. Deposition can be stopped by closing the valve 45. After closing the valve 45, the nozzle 42 is positioned in the retracted position. This allows the nozzle 42 to be positioned away from the sample S, making effective use of the space near the sample S.

[0036] Since the housing tube 46 is fixed, moving the nozzle 42 changes the distance between the through-hole 460 in the housing tube 46 and the exhaust hole 426 in the nozzle 42. Specifically, the distance between the exhaust hole 426 and the through-hole 460 when the nozzle 42 is in the retracted position is smaller than the distance between the exhaust hole 426 and the through-hole 460 when the nozzle 42 is in the film-forming position.

[0037] As shown in Figure 3, when the nozzle 42 is positioned at the film deposition location, the exhaust hole 426 communicates with the sealed chamber 6a. Therefore, the exhaust path is closed. Consequently, when the nozzle 42 is positioned at the film deposition location, the amount of gas 2 discharged from the exhaust hole 426 is very small, and most of the gas 2 supplied from the supply port 424 is blown out from the outlet 422. This allows gas 2 to be blown onto the sample S, and a deposition film to be formed on the sample S.

[0038] As shown in Figure 4, when the nozzle 42 is in the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b. Therefore, the exhaust hole 426, the exhaust chamber 6b, and the through hole 460 constitute the exhaust path. Thus, by moving the nozzle 42 to the retracted position, the exhaust path is opened, and the gas 2 remaining in the nozzle 42 can be discharged to the sample chamber 102 via the exhaust path.

[0039] When the nozzle 42 is positioned in the retracted position, the exhaust hole 426 and the through hole 460 overlap when viewed from a direction along the central axis of the exhaust hole 426. Therefore, the gas 2 discharged from the exhaust hole 426 can be efficiently exhausted into the sample chamber 102 through the through hole 460.

[0040] Here, the diameter of the exhaust hole 426 is larger than the diameter of the outlet 422. Also, the diameter of the through hole 460 is larger than the diameter of the outlet 422. Furthermore, multiple exhaust holes 426 and through holes 460 are provided. In this way, by increasing the diameters of the exhaust holes 426 and through holes 460, and by providing multiple exhaust holes 426 and through holes 460, the conductance of the exhaust path can be increased. Conductance is an indicator of how easily a gas flows; for the same pressure difference, the greater the conductance, the greater the gas flow rate.

[0041] In the focused ion beam apparatus 100, when the nozzle 42 is positioned in the retracted position, the conductance of the exhaust path is such that the conductance of the tip portion of the nozzle 42 from the exhaust hole 426 to the outlet 422 It is greater than the ductance. Therefore, when the nozzle 42 is positioned in the retracted position, the amount of gas 2 discharged from the exhaust path can be greater than the amount of gas 2 discharged from the outlet 422.

[0042] The through-hole 460 is not oriented in the direction of the sample S. That is, the central axis of the through-hole 460 does not intersect with the sample S. Here, the vacuum level inside the sample chamber 102 is 10 -5 Pa~10 -6 This is a molecular flow region of approximately Pa. In the molecular flow region, gas molecules travel in a nearly straight line. Therefore, the number of gas molecules discharged from the through-hole 460 into the sample chamber 102 and heading towards the sample S can be extremely reduced. As a result, the possibility of gas 2 exhausted from the through-hole 460 into the sample chamber 102 adhering to the sample S can be reduced.

[0043] 1.4. Effects The focused ion beam apparatus 100 includes a nozzle 42 that blows gas 2 for forming a deposition film onto a sample S from an outlet 422, and a reservoir tank 44 that supplies gas 2 into the nozzle 42. The nozzle 42 also has an exhaust hole 426 for exhausting the gas 2 inside the nozzle 42. Therefore, the focused ion beam apparatus 100 can exhaust the gas 2 remaining inside the nozzle 42.

[0044] Because the nozzle 42 is narrow and long, gas 2 remains inside the nozzle 42 even when the valve 45 is closed. If this remaining gas 2 leaks out of the nozzle 42 and reaches the surface of the sample S, a deposition film will be unintentionally formed on the surface of the sample S. In particular, in cryo-FIB, a deposition film is formed without irradiation with an electron beam or ion beam. Therefore, gas 2 leaking from the nozzle 42 may cause a deposition film to be formed on the surface of the sample S so thick that it affects observation and analysis with an electron microscope. Furthermore, even with a sample S at room temperature, depending on the type of gas 2, a thick deposition film may be formed on the surface of the sample S.

[0045] In contrast, the focused ion beam apparatus 100 can evacuate the gas 2 remaining in the nozzle 42, thus preventing the deposition film from becoming so thick that it affects observation and analysis with an electron microscope.

[0046] Furthermore, if gas 2 remains in the nozzle 42, when a deposition film is formed on the surface of the sample S, the components of gas 2 remaining in the nozzle 42 will be blown onto the sample S, making it impossible to blow high-purity gas 2 onto the sample S. In contrast, the focused ion beam apparatus 100 can exhaust the gas 2 remaining in the nozzle 42, thus keeping the inside of the nozzle 42 clean. Therefore, high-purity gas 2 can be blown onto the sample S during film formation.

[0047] The focused ion beam apparatus 100 includes a movement mechanism 48 that allows the nozzle 42 to move between a film deposition position where gas 2 can be blown onto the sample S from the outlet 422, and a retracted position different from the film deposition position. Therefore, in the focused ion beam apparatus 100, gas 2 can be efficiently blown onto the sample S during film deposition, and during retraction, the nozzle 42 can be positioned away from the sample S, allowing for efficient use of the space near the sample S.

[0048] In the focused ion beam apparatus 100, the exhaust hole 426 constitutes an exhaust path for exhausting the gas 2 inside the nozzle 42. The exhaust path closes when the nozzle 42 is in the film deposition position and opens when the nozzle 42 is in the retracted position. Therefore, in the focused ion beam apparatus 100, gas 2 is blown out from the outlet 422 during film deposition, and the gas 2 remaining inside the nozzle 42 can be exhausted from the exhaust hole 426 when the nozzle is retracted.

[0049] In the focused ion beam apparatus 100, when the nozzle 42 is positioned in the film deposition position, the exhaust hole 426 communicates with a sealed chamber 6a, and when the nozzle 42 is positioned in the retracted position, the exhaust hole 426 communicates with an exhaust chamber 6b that constitutes an exhaust path for exhausting the gas 2 inside the nozzle 42. Therefore, in the focused ion beam apparatus 100, the gas 2 remaining inside the nozzle 42 can be exhausted by moving the nozzle 42 from the film deposition position to the retracted position. Thus, in the focused ion beam apparatus 100, the gas 2 remaining inside the nozzle 42 can be automatically exhausted by positioning the nozzle 42 in the retracted position, eliminating the need for any operation to exhaust the gas 2 remaining inside the nozzle 42.

[0050] In the focused ion beam apparatus 100, the exhaust path is connected to the sample chamber 102 where the sample S is placed. Therefore, in the focused ion beam apparatus 100, it is not necessary to prepare a new exhaust system to configure the exhaust path, and the gas 2 remaining in the nozzle 42 can be exhausted with a simple configuration.

[0051] The focused ion beam apparatus 100 includes a housing tube 46 that houses the nozzle 42, and the gap 6 between the housing tube 46 and the nozzle 42 constitutes an exhaust path for exhausting the gas 2 inside the nozzle 42. Therefore, the focused ion beam apparatus 100 can form an exhaust path with a simple configuration.

[0052] In the focused ion beam apparatus 100, the housing tube 46 is provided with a through-hole 460 that communicates with the gap 6. Furthermore, the distance between the exhaust hole 426 and the through-hole 460 when the nozzle 42 is in the retracted position is smaller than the distance between the exhaust hole 426 and the through-hole 460 when the nozzle 42 is in the film deposition position. Therefore, in the focused ion beam apparatus 100, the gas 2 exhausted from the exhaust hole 426 can be efficiently discharged through the through-hole 460.

[0053] In the focused ion beam apparatus 100, the through-hole 460 is not oriented towards the sample S. Therefore, the focused ion beam apparatus 100 can reduce the possibility that gas 2 discharged from the through-hole 460 into the sample chamber 102 will reach the sample S.

[0054] The focused ion beam apparatus 100 includes a moving mechanism 48 as a control mechanism for changing the conductance of the exhaust path for exhausting the gas 2 in the nozzle 42. The moving mechanism 48 can move the nozzle 42 to connect the exhaust hole 426 to the sealed chamber 6a or to the exhaust chamber 6b. In this way, the moving mechanism 48 functions as a control mechanism for changing the conductance of the exhaust path. Therefore, the focused ion beam apparatus 100 can control the amount of gas 2 blown out from the outlet 422 and the amount of gas 2 discharged from the exhaust hole 426.

[0055] In the focused ion beam apparatus 100, the outlet 422 is located at the tip of the nozzle 42. Therefore, in the focused ion beam apparatus 100, the outlet 422 can be brought close to the sample S. In addition, in the focused ion beam apparatus 100, the exhaust hole 426 penetrates the side wall of the nozzle 42. Therefore, in the focused ion beam apparatus 100, residual gas 2 inside the nozzle 42 can be efficiently exhausted.

[0056] In the focused ion beam apparatus 100, the diameter of the exhaust port 426 is larger than the diameter of the outlet 422. Therefore, in the focused ion beam apparatus 100, the gas 2 remaining in the nozzle 42 can be efficiently discharged from the exhaust port 426.

[0057] 1.5. Variations Figures 5 and 6 are schematic cross-sectional views showing modified examples of the focused ion beam apparatus 100. Figure 5 shows the nozzle 42 positioned at the film deposition location, and Figure 6 shows... The diagram shows the nozzle 42 in the retracted position.

[0058] In the first embodiment described above, O-rings 402 and 404 were fitted into grooves for O-rings provided on the inner wall of the housing tube 46. In contrast, in this modified example, as shown in Figures 5 and 6, O-rings 402 and 404 are fitted into grooves formed on the outer surface of the nozzle 42.

[0059] O-rings 402 and 404 move as the nozzle 42 moves. Therefore, the space 6c between O-rings 402 and 404 moves as the nozzle 42 moves. An exhaust hole 426 is provided between O-rings 402 and 404. The exhaust hole 426 communicates with the space 6c.

[0060] As shown in Figure 5, when the nozzle 42 is positioned in the film deposition position, the space 6c between the O-rings 402 and 404 does not communicate with the through-hole 460, and the exhaust path is closed. Therefore, most of the gas 2 supplied from the supply port 424 is blown out from the outlet 422.

[0061] In contrast, as shown in Figure 6, when the nozzle 42 is in the retracted position, the space 6c communicates with the through-hole 460, and an exhaust path opens. Therefore, the gas 2 remaining in the nozzle 42 can be discharged to the sample chamber 102 via the exhaust path.

[0062] Thus, in the focused ion beam apparatus according to this modified example, similar to the focused ion beam apparatus 100, when the nozzle 42 is positioned in the retracted position, the gas 2 remaining in the nozzle 42 can be discharged into the sample chamber 102 through the exhaust hole 426 and the through hole 460.

[0063] 2. Second Embodiment 2.1. Focused Ion Beam System Next, a focused ion beam apparatus according to the second embodiment will be described with reference to the drawings. Figure 7 is a diagram showing an example of the configuration of the focused ion beam apparatus 200 according to the second embodiment. Figure 8 is a schematic cross-sectional view showing the gas injection apparatus 40 of the focused ion beam apparatus 200.

[0064] Hereinafter, in the focused ion beam apparatus 200 according to the second embodiment, components having the same function as the components of the focused ion beam apparatus 100 according to the first embodiment will be denoted by the same reference numerals, and their detailed descriptions will be omitted.

[0065] In the focused ion beam apparatus 100 shown in Figure 1, the gas 2 remaining in the nozzle 42 was exhausted to the sample chamber 102 via the exhaust path.

[0066] In contrast, the focused ion beam apparatus 200 shown in Figure 7 includes an exhaust system 103 (hereinafter also referred to as the "first exhaust system") for exhausting the sample chamber 102, and a second exhaust system 202 for exhausting the inside of the nozzle 42. The second exhaust system 202 is an exhaust system independent of the first exhaust system 103. The second exhaust system 202 is not in communication with the sample chamber 102. Thus, the focused ion beam apparatus 200 is equipped with a dedicated exhaust system for exhausting the gas 2 remaining inside the nozzle 42.

[0067] As shown in Figure 8, an exhaust pipe 462 is connected to the housing pipe 46, communicating with the gap 6 between the nozzle 42 and the housing pipe 46. The exhaust pipe 462 constitutes the second exhaust system 202. The second exhaust system 202 includes a vacuum evacuation device, the exhaust pipe 462, and a valve, although these are not shown in the figure. Note that the vacuum evacuation device of the first exhaust system 103 and the vacuum evacuation device of the second exhaust system 202 are common. It's okay to have it.

[0068] 2.2. Operation Figures 9 and 10 are diagrams illustrating the operation of the focused ion beam apparatus 200. Figure 9 shows the nozzle 42 in the film deposition position. Figure 10 shows the nozzle 42 in the retracted position.

[0069] As shown in Figure 9, when the nozzle 42 is positioned in the film deposition position, the exhaust hole 426 communicates with the sealed chamber 6a, thus closing the exhaust path. Therefore, when the nozzle 42 is positioned in the film deposition position, most of the gas 2 supplied from the supply port 424 is blown out from the outlet 422.

[0070] As shown in Figure 10, when the nozzle 42 is in the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b. Therefore, the exhaust hole 426, the exhaust chamber 6b, and the exhaust pipe 462 constitute the exhaust path. Thus, by moving the nozzle 42 to the retracted position, the exhaust path is opened, and the gas 2 remaining in the nozzle 42 can be discharged from the second exhaust system 202 through the exhaust path.

[0071] 2.3. Effects In the focused ion beam apparatus 200, similar to the focused ion beam apparatus 100 described above, the gas 2 remaining in the nozzle 42 can be exhausted. Furthermore, the focused ion beam apparatus 200 includes a first exhaust system 103 for exhausting the sample chamber 102 and a second exhaust system 202 for exhausting the inside of the nozzle 42. Therefore, the focused ion beam apparatus 200 can discharge the gas 2 remaining in the nozzle 42 to the outside of the sample chamber 102. Consequently, the focused ion beam apparatus 200 can prevent a thick deposition film from being formed on the sample S.

[0072] 3. Third Embodiment 3.1. Focused Ion Beam System Next, a focused ion beam apparatus according to the third embodiment will be described with reference to the drawings. Figure 11 is a diagram showing an example of the configuration of the focused ion beam apparatus 300 according to the third embodiment. Hereinafter, in the focused ion beam apparatus 300 according to the third embodiment, components having the same function as the components of the focused ion beam apparatus 100 according to the first embodiment and the focused ion beam apparatus 200 according to the second embodiment will be denoted by the same reference numerals, and their detailed descriptions will be omitted.

[0073] In the focused ion beam apparatus 200 shown in Figures 7 to 10 above, the gas 2 remaining in the nozzle 42 was exhausted using the second exhaust system 202. In contrast, in the focused ion beam apparatus 300, as shown in Figure 11, the gas 2 remaining in the nozzle 42 was exhausted using the cold trap 310.

[0074] The cold trap 310 includes cooling fins 312 and a tank 314 filled with a refrigerant for cooling the cooling fins 312. The cold trap 310 is a device that cools the cooling fins 312 to condense gas molecules. The cooling fins 312 are located in the exhaust chamber 6b. The tank 314 contains, for example, liquid nitrogen or liquid helium as a refrigerant.

[0075] In the focused ion beam apparatus 300, when the nozzle 42 is positioned in the retracted position, the gas 2 remaining inside the nozzle 42 can be condensed in the cold trap 310 via the exhaust hole 426 and the exhaust chamber 6b. This allows the gas 2 remaining inside the nozzle 42 to be exhausted.

[0076] 3.2. Operation The operation of the focused ion beam apparatus 300 is the same as that of the focused ion beam apparatus 200 described above, except that when the nozzle 42 is in the retracted position, the cold trap 310 is used to exhaust the gas 2 remaining in the nozzle 42, and therefore its explanation is omitted.

[0077] 3.3. Effects In the focused ion beam apparatus 300, similar to the focused ion beam apparatus 200 described above, the gas 2 remaining in the nozzle 42 is not discharged into the sample chamber 102.

[0078] 4. Fourth Embodiment 4.1. Focused Ion Beam System Next, a focused ion beam apparatus according to the fourth embodiment will be described with reference to the drawings. Figure 12 is a diagram showing an example of the configuration of the focused ion beam apparatus 400 according to the fourth embodiment. Hereinafter, in the focused ion beam apparatus 400 according to the fourth embodiment, components having the same function as the components of the focused ion beam apparatus 100 according to the first embodiment will be denoted by the same reference numerals, and their detailed descriptions will be omitted.

[0079] In the focused ion beam apparatus 100 shown in Figures 1 to 4, when the nozzle 42 is positioned in the film deposition position, the exhaust hole 426 communicates with the sealed chamber 6a to close the exhaust path, and when the nozzle 42 is positioned in the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b to open the exhaust path.

[0080] In contrast, the focused ion beam apparatus 400 changes the conductance of the exhaust path by moving the nozzle 42 to change the distance of the gap 6 connecting the exhaust hole 426 and the through hole 460. Specifically, when the nozzle 42 is positioned in the film deposition position, the distance between the exhaust hole 426 and the through hole 460 increases, and the conductance of the exhaust path becomes smaller than the conductance of the tip portion of the nozzle 42. Also, when the nozzle 42 is positioned in the retracted position, the distance between the exhaust hole 426 and the through hole 460 decreases, and the conductance of the exhaust path becomes larger than the conductance of the tip portion of the nozzle 42.

[0081] The focused ion beam apparatus 400 does not have an O-ring 404, and a sealed chamber 6a is not formed in the gap 6 between the nozzle 42 and the housing tube 46. Furthermore, in the focused ion beam apparatus 400, the gap 6 is narrow, making it difficult for gas 2 to flow. In other words, the exhaust conductance of the gap 6 is small.

[0082] 4.2. Operation Figures 13 and 14 are diagrams illustrating the operation of the focused ion beam apparatus 400. Figure 13 shows the nozzle 42 in the film deposition position. Figure 14 shows the nozzle 42 in the retracted position.

[0083] As shown in Figure 13, when the nozzle 42 is positioned at the film deposition location, the exhaust hole 426 communicates with the gap 6. In this case, the exhaust path consists of the exhaust hole 426, the gap 6, and the through hole 460. When the nozzle 42 is positioned at the film deposition location, the distance between the exhaust hole 426 and the through hole 460 is large, and the length of the gap 6, which serves as the exhaust path for the gas 2 connecting the exhaust hole 426 and the through hole 460, is long. Therefore, the conductance of the tip portion of the nozzle 42 becomes greater than the conductance of the exhaust path. Consequently, when the nozzle 42 is positioned at the film deposition location, most of the gas 2 supplied from the supply port 424 is blown out from the outlet 422.

[0084] As shown in Figure 14, when the nozzle 42 is in the retracted position, the exhaust hole 426 communicates with the gap 6, just as when the nozzle 42 is in the film-forming position. Here, the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is in the retracted position is This distance is smaller than the distance between the exhaust hole 426 and the through hole 460 when the nozzle is positioned in the film deposition position. This allows the length of the gap 6, which serves as the exhaust path for the gas 2 connecting the exhaust hole 426 and the through hole 460, to be shortened. As a result, the conductance of the exhaust path can be made greater than the conductance of the tip portion of the nozzle 42. Therefore, when the nozzle 42 is positioned in the retracted position, the gas 2 remaining inside the nozzle 42 can be discharged into the sample chamber 102 via the exhaust path.

[0085] In the example shown in Figure 13, when the nozzle 42 is positioned in the film deposition position, the exhaust hole 426 and the through hole 460 do not overlap when viewed from a direction along the central axis of the exhaust hole 426. In contrast, in the example shown in Figure 14, when the nozzle 42 is positioned in the retracted position, the exhaust hole 426 and the through hole 460 overlap when viewed from a direction along the central axis of the exhaust hole 426. Therefore, when the nozzle 42 is positioned in the retracted position, the gas 2 discharged from the exhaust hole 426 can be efficiently discharged into the sample chamber 102 through the through hole 460.

[0086] Thus, when the nozzle 42 is positioned in the film deposition position, the conductance at the tip of the nozzle 42 becomes greater than the conductance of the exhaust path. Therefore, the amount of gas 2 blown out from the outlet 422 can be greater than the amount of gas 2 discharged from the exhaust hole 426. Also, when the nozzle 42 is positioned in the retracted position, the conductance of the exhaust path becomes greater than the conductance at the tip of the nozzle 42. Therefore, the amount of gas 2 discharged from the exhaust hole 426 can be greater than the amount of gas 2 blown out from the outlet 422. The movement mechanism 48 that moves the nozzle 42 functions as a control mechanism that changes the conductance of the exhaust path.

[0087] 4.3. Effects In the focused ion beam apparatus 400, the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is in the retracted position is smaller than the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is in the film deposition position. Therefore, in the focused ion beam apparatus 400, the conductance of the exhaust path when the nozzle 42 is in the retracted position can be made larger than the conductance of the exhaust path when the nozzle 42 is in the film deposition position. Consequently, in the focused ion beam apparatus 400, similar to the focused ion beam apparatus 100 described above, the gas 2 remaining inside the nozzle 42 can be exhausted when the nozzle 42 is in the retracted position.

[0088] 5. Fifth Embodiment 5.1. Focused Ion Beam System Next, a focused ion beam apparatus according to the fifth embodiment will be described with reference to the drawings. Figure 15 is a diagram showing an example of the configuration of the focused ion beam apparatus 500 according to the fifth embodiment. Hereinafter, in the focused ion beam apparatus 500 according to the fifth embodiment, components having the same function as the components of the focused ion beam apparatus 100 according to the first embodiment and the focused ion beam apparatus 200 according to the second embodiment will be denoted by the same reference numerals, and their detailed descriptions will be omitted.

[0089] In the focused ion beam apparatus 100 shown in Figures 1 to 4 above, the gas injection apparatus 40 had a moving mechanism 48 for moving the nozzle 42. In contrast, the focused ion beam apparatus 500, as shown in Figure 15, does not have a moving mechanism 48, and the position of the nozzle 42 is fixed.

[0090] Furthermore, in the focused ion beam apparatus 100, the gap 6 between the nozzle 42 and the housing tube 46 was divided into a sealed chamber 6a and an exhaust chamber 6b. In contrast, in the focused ion beam apparatus 500, the gap 6 is not divided and is a single space. An exhaust hole 426 is connected to the gap 6. An exhaust pipe 462 is also connected to the gap 6.

[0091] As shown in Figure 15, the gas injection device 40 includes an exhaust pipe 462 connected to the gap 6 and a valve 464 provided in the exhaust pipe 462. The exhaust pipe 462 and the valve 464 constitute the second exhaust system 202.

[0092] Valve 464 is, for example, a gate valve that partitions and opens / closes the exhaust pipe 462. The exhaust path for the gas 2 remaining in the nozzle 42 consists of an exhaust hole 426 and a gap 6. By opening valve 464, the exhaust pipe 462 communicates with the gap 6, and the gas 2 remaining in the nozzle 42 can be exhausted through the exhaust path by the second exhaust system 202. Conversely, by closing valve 464, the second exhaust system 202 and the exhaust path are not connected, and the exhaust from the nozzle 42 can be stopped.

[0093] 5.2. Operation Figures 16 and 17 are diagrams illustrating the operation of the focused ion beam apparatus 400. Figure 16 is a schematic cross-sectional view of the gas injection apparatus 40 when depositing a film onto a sample S. Figure 17 is a schematic cross-sectional view of the gas injection apparatus 40 when exhausting the gas 2 remaining in the nozzle 42.

[0094] When depositing a film, the valve 464 is closed to close the exhaust path. As a result, as shown in Figure 16, gas 2 is not discharged from the exhaust hole 426, and most of the gas 2 supplied from the supply port 424 is blown out from the outlet 422. This allows gas 2 to be blown onto the sample S, and a deposition film to be formed on the sample S.

[0095] To exhaust the gas 2 remaining in the nozzle 42, the valve 464 is opened to open the exhaust path. This allows the gas 2 remaining in the nozzle 42 to be discharged from the second exhaust system 202 via the exhaust path, as shown in Figure 17.

[0096] 5.3. Effects The focused ion beam apparatus 500 includes a valve 464 for opening and closing the exhaust path. Therefore, the focused ion beam apparatus 500 can exhaust the gas 2 remaining in the nozzle 42, similar to the focused ion beam apparatus 100.

[0097] 5.4. Variations The focused ion beam apparatus 500 described above was equipped with a valve 464 for opening and closing the exhaust path, but the valve 464 may be a valve for adjusting the flow rate. The valve 464 is, for example, a needle valve that can adjust the flow rate. The valve 464 is not particularly limited as long as it can adjust the flow rate, and known flow control valves such as orifices that can adjust the flow rate can be used.

[0098] When forming a deposition film, the valve 464 is adjusted so that the conductance of the exhaust path is less than the conductance of the tip of the nozzle 42. As a result, most of the gas 2 supplied from the supply port 424 is blown out from the outlet 422, allowing a deposition film to be formed on the sample S.

[0099] When discharging the gas 2 remaining in the nozzle 42, the valve 464 is adjusted so that the conductance of the exhaust path is greater than the conductance of the tip of the nozzle 42. This allows the gas 2 remaining in the nozzle 42 to be discharged from the second exhaust system 202 via the exhaust path.

[0100] Thus, valve 464 functions as a control mechanism that changes the conductance of the exhaust path.

[0101] In the above modified example, the conductance of the exhaust path was changed using a valve 464 that can adjust the flow rate. However, the mechanism for changing the conductance of the exhaust path is not limited to a valve. For example, the conductance of the exhaust path may be changed by varying the diameter of the exhaust hole 426 or the size of the gap 6.

[0102] 6. Others It should be noted that the present invention is not limited to the embodiments described above, and various modifications can be implemented within the scope of the gist of the present invention.

[0103] In the first embodiment described above, the focused ion beam apparatus 100 was equipped with an SEM tube 10 and a FIB tube 20, but the focused ion beam apparatus 100 does not need to be equipped with an SEM tube 10. The same applies to the focused ion beam apparatus according to the second to fifth embodiments; it does not need to be equipped with an SEM tube 10.

[0104] The embodiments and modifications described above are merely examples and are not limiting. For example, each embodiment and each modification can be combined as appropriate.

[0105] The present invention is not limited to the embodiments described above, and various further modifications are possible. For example, the present invention includes configurations that are substantially identical to those described in the embodiments. A substantially identical configuration is, for example, a configuration that has the same function, method, and result, or a configuration that has the same purpose and effect. The present invention also includes configurations in which non-essential parts of the configuration described in the embodiments are replaced. Furthermore, the present invention includes configurations that produce the same effects or achieve the same purpose as the configuration described in the embodiments. Furthermore, the present invention includes configurations that add known technology to the configuration described in the embodiments. [Explanation of Symbols]

[0106] 6... Gap, 6a... Sealed chamber, 6b... Exhaust chamber, 6c... Space, 10... SEM tube, 20... FIB tube, 30... Sample stage, 32... Cooling mechanism, 40... Gas injection device, 42... Nozzle, 44... Reservoir tank, 45... Valve, 46... Housing tube, 47... Flange, 48... Moving mechanism, 100... Focused ion beam device, 102... Sample chamber, 103... First exhaust system, 104... Housing, 106... O-ring, 200...Focused ion beam device, 202...Second exhaust system, 300...Focused ion beam device, 310...Cold trap, 312...Cooling fins, 314...Tank, 400...Focused ion beam device, 402...O-ring, 404...O-ring, 422...Outlet, 424...Supply port, 426...Exhaust hole, 460...Through hole, 462...Exhaust pipe, 464...Valve, 500...Focused ion beam device

Claims

1. A focused ion beam apparatus for processing a sample by irradiating it with an ion beam, A nozzle that blows gas from the outlet onto the sample to form a deposition film, A tank that supplies gas into the nozzle, A housing tube for housing the nozzle, A first O-ring and a second O-ring are provided to airtightly seal the space between the nozzle and the housing tube, and to divide the space between the nozzle and the housing tube into a sealed chamber and an exhaust chamber. A movement mechanism that allows the nozzle to move between a film-forming position in which gas can be blown onto the sample from the outlet and a retracted position different from the film-forming position, Includes, The nozzle has an exhaust hole for exhausting the gas inside the nozzle. The housing tube has a through hole, one opening of which is connected to the exhaust chamber and the other opening of which is connected to the sample chamber in which the sample is placed. When the nozzle is positioned at the film deposition location, the exhaust hole communicates with the sealed chamber. When the nozzle is positioned in the retracted position, the exhaust hole communicates with the through hole via the exhaust chamber. A focused ion beam apparatus in which the direction in which the other opening faces is different from the direction in which the outlet faces.

2. In claim 1, A focused ion beam apparatus including a first exhaust system for exhausting the sample chamber.

3. In claim 1, A focused ion beam apparatus in which the distance between the exhaust hole and the through hole when the nozzle is positioned in the retracted position is smaller than the distance between the exhaust hole and the through hole when the nozzle is positioned in the film deposition position.

4. In any one of claims 1 to 3, A control mechanism for changing the conductance of the exhaust path for exhausting the gas inside the nozzle. A focused ion beam apparatus, including a ion beam system.

5. In any one of claims 1 to 3, The aforementioned outlet is a focused ion beam device provided at the tip of the nozzle.

6. In any one of claims 1 to 3, The exhaust hole penetrates the side wall of the nozzle in a focused ion beam apparatus.

7. In any one of claims 1 to 3, A focused ion beam apparatus in which the diameter of the exhaust hole is larger than the diameter of the outlet.

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