Wafer processing method

JP7878965B2Active Publication Date: 2026-06-23DISCO CORP

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
DISCO CORP
Filing Date
2022-08-08
Publication Date
2026-06-23

AI Technical Summary

Benefits of technology

【0012】 本発明によれば、第1切削ステップにおいて、切削ブレードの一方の面側部分でウェーハの外周環状領域の大半を除去するため、第2切削ステップにおける切削ブレードの他方の面側部分によるウェーハの切削量が僅かとなる。このため、切削ブレードの一方の面側部分と他方の面側が同時に偏摩耗することがなく、切削ブレードの刃先を整形するドレスの頻度を低く抑えて生産性を高めることができる。

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Patent Text Reader

Abstract

To provide a wafer processing method capable of reducing frequency of a dress of a cutting blade supplied for edge trimming and of increasing productivity.SOLUTION: A processing method which cuts an outer circumferential annular area Wa of a wafer W with a cutting blade 2 and removes it up to a prescribed depth removes the outer circumferential annular area Wa of the wafer W up to the prescribed depth via the following steps: a holding step for holding the wafer W on a holding table 1; a first cutting step which locates one surface side part 2A of the cutting blade 2 in the outer circumferential annular area Wa of the wafer W held on the holding table 1, cuts it just for prescribed depth h1, rotates the holding table 1 at least once, and forms in the outer circumferential annular area Wa an annular cutting groove W1; and a second cutting step which locates the other surface side part 2B of the cutting blade 2 in the outer circumferential annular area Wa of the wafer W held on the holding table 1, cuts it in the cutting groove W1, rotates the holding table 1 at least once, grinds a bottom surface of the cutting groove W1, and flattens it.SELECTED DRAWING: Figure 9
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Claims

1. A wafer processing method comprising cutting an outer ring region of a predetermined width in the radial direction from the outer edge of the wafer with a cutting blade to remove it to a predetermined depth, A holding step in which the wafer is held on a holding table, A first cutting step involves positioning one side of the cutting blade in the outer annular region of the wafer held on the holding table and cutting to a predetermined depth, and rotating the holding table at least once to form an annular cutting groove in the outer annular region. After performing the first cutting step, a second cutting step is performed in which the other side of the cutting blade is positioned in the outer annular region of the wafer held on the holding table and cuts into the cutting groove, and the holding table is rotated at least once to grind and flatten the bottom surface of the cutting groove. This includes removing the outer ring region of the wafer to a predetermined depth, The composition of one side portion of the cutting blade is the same as the composition of the other side portion. Wafer processing methods.

2. The wafer processing method according to claim 1, characterized in that the thickness of the other side portion of the cutting blade used in the second cutting step is set to be greater than the thickness of the one side portion of the cutting blade used in the first cutting step.

3. Further comprising setting up to detect the position of the cutting edge of the other side portion of the cutting blade as the position of the cutting edge of the cutting blade, In the second cutting step, control is implemented so that the cutting edge of the other side of the cutting blade is positioned at a desired cutting depth. A wafer processing method according to claim 1 or 2.