Display devices and electronic devices

Abstract

To provide a high-definition display device with a light detecting function.SOLUTION: A display device includes a display portion where first arrangement patterns and second arrangement patterns are disposed repeatedly in a first direction. In the first arrangement pattern, first subpixels, second subpixels, and third subpixels are disposed repeatedly in a second direction. In the second arrangement pattern, fourth subpixels and fifth subpixels are disposed repeatedly in the second direction. Each of the first subpixels to the fourth subpixels includes a light-emitting device, and the fifth subpixel includes a light-receiving device.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device and an electronic device.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] In recent years, there has been a growing demand for higher resolution display devices. Examples of devices requiring high-resolution displays include those for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), and these are currently undergoing extensive development. Display devices used in these applications require both high resolution and miniaturization.

[0004] As a display device, for example, a light-emitting device (light-emitting element) has been developed. Light-emitting devices that utilize the electroluminescence (EL) phenomenon (also called EL devices or EL elements) have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices.

[0005] For example, an example of a display device using organic EL elements is described in Patent Document 1. As with the display device in Patent Document 1, when high display quality is required, a display device with a high pixel count and high resolution may be necessary. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] International Publication No. 2019 / 220278 [Overview of the project] [Problems that the invention aims to solve]

[0007] Devices for virtual reality (VR) and augmented reality (AR) require display devices with high display quality, such as those shown in Patent Document 1. In this case, the display is performed in a wearable housing, such as glasses or goggles, so miniaturization and weight reduction of the display device are important factors. For wearable housings, for example, the size of the display device needs to be reduced to approximately 2 inches or less, or even 1 inch or less.

[0008] Furthermore, devices for virtual reality (VR) and augmented reality (AR) are becoming more multi-functional by incorporating sensors.

[0009] One aspect of the present invention aims to provide a high-resolution display device having a light detection function. Another aspect of the present invention aims to provide a high-resolution display device having a light detection function. Another aspect of the present invention aims to provide a highly reliable display device having a light detection function.

[0010] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0011] One aspect of the present invention is a display device having a display unit in which a first array pattern and a second array pattern are repeatedly arranged in a first direction, wherein in the first array pattern, a first sub-pixel, a second sub-pixel, and a third sub-pixel are repeatedly arranged in a second direction, and in the second array pattern, a fourth sub-pixel and a fifth sub-pixel are repeatedly arranged in a second direction, and each of the first to fourth sub-pixels has a light-emitting device, and the fifth sub-pixel has a light-receiving device.

[0012] The longitudinal direction of the first sub-pixel, the second sub-pixel, and the third sub-pixel is preferably the first direction.

[0013] The longitudinal direction of the fourth sub-pixel is preferably the second direction.

[0014] The fifth sub-pixel preferably has the lowest aperture ratio among the first to fifth sub-pixels.

[0015] Preferably, the third sub-pixel emits infrared light and has the highest aperture ratio among the first to fifth sub-pixels. Preferably, one of the first and second sub-pixels emits red light and the other emits green light, the fourth sub-pixel emits blue light, and the fifth sub-pixel detects at least infrared light.

[0016] Alternatively, it is preferable that the fourth sub-pixel emits infrared light and has the highest aperture ratio among the first to fifth sub-pixels. It is preferable that one of the first and second sub-pixels emits red light and the other emits green light, the third sub-pixel emits blue light, and the fifth sub-pixel detects at least infrared light.

[0017] The first subpixel preferably has a region where the distance from adjacent subpixels is 3 μm or less, and more preferably has a region where the distance is less than 1 μm.

[0018] One aspect of the present invention includes a display device having any of the above configurations and a processing unit. The display device has a function of performing imaging using a fifth sub-pixel, and the processing unit has a function of detecting any one or more selected from the user's blinking, movement of the black eyes, and movement of the eyelids using the imaging data captured by the display device. The electronic device is as described above.

[0019] One aspect of the present invention includes at least two display devices having any of the above configurations, a housing in which the display devices are provided, and a battery provided in the housing and supplying power to the display devices. The housing has a mounting portion and a pair of lenses. An image is projected from one of the two display devices onto one of the pair of lenses, and an image is projected from the other of the two display devices onto the other of the pair of lenses. The electronic device preferably further includes a processing unit provided in the housing. The display device has a function of performing imaging using a fifth sub-pixel, and the processing unit preferably has a function of detecting any one or more selected from the user's blinking, movement of the black eyes, and movement of the eyelids using the imaging data captured by the display device.

Advantages of the Invention

[0020] According to one aspect of the present invention, a display device having a light detection function and high definition can be provided. According to one aspect of the present invention, a display device having a light detection function and high resolution can be provided. According to one aspect of the present invention, a display device having a light detection function and high reliability can be provided.

[0021] Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. It is possible to extract other effects from the description of the specification, drawings, and claims.

Brief Description of the Drawings

[0022] [Figure 1] FIG. 1(A) is a top view showing an example of the display device. FIG. 1(B) is a cross-sectional view showing an example of the display device. [Figure 2]Figures 2(A) to 2(D) show examples of pixels. [Figure 3] Figures 3(A) to 3(C) are cross-sectional views showing an example of a display device. [Figure 4] Figures 4(A) and 4(B) are cross-sectional views showing an example of a display device. [Figure 5] Figures 5(A) to 5(C) are cross-sectional views showing an example of a display device. [Figure 6] Figures 6(A) to 6(F) are cross-sectional views showing an example of a display device. [Figure 7] Figure 7(A) is a schematic diagram of the display device and a cross-section of the user's eye. Figure 7(B) is a schematic diagram illustrating the user's eye and its vicinity. Figure 7(C) is a schematic diagram showing the retinal pattern of the user's eye. [Figure 8] Figures 8(A) to 8(D) are circuit diagrams showing an example of a display device. [Figure 9] Figures 9(A) to 9(D) are circuit diagrams showing an example of a display device. [Figure 10] Figure 10 is a timing chart showing an example of a driving method for a display device. [Figure 11] Figures 11(A) and 11(B) are perspective views showing an example of a display device. [Figure 12] Figures 12(A) to 12(C) are cross-sectional views showing an example of a display device. [Figure 13] Figure 13 is a cross-sectional view showing an example of a display device. [Figure 14] Figure 14 is a cross-sectional view showing an example of a display device. [Figure 15] Figure 15 is a cross-sectional view showing an example of a display device. [Figure 16] Figure 16 is a cross-sectional view showing an example of a display device. [Figure 17] Figure 17 is a cross-sectional view showing an example of a display device. [Figure 18] Figure 18 is a perspective view showing an example of a display device. [Figure 19]Figure 19(A) is a cross-sectional view showing an example of a display device. Figures 19(B) and 19(C) are cross-sectional views showing an example of a transistor. [Figure 20] Figures 20(A) to 20(D) are cross-sectional views showing an example of a display device. [Figure 21] Figures 21(A) to 21(F) show examples of the configuration of a light-emitting device. [Figure 22] Figures 22(A) and 22(B) show examples of electronic devices. [Figure 23] Figures 23(A) and 23(B) show examples of electronic devices. [Figure 24] Figures 24(A) and 24(B) show examples of electronic devices. [Figure 25] Figures 25(A) to 25(D) show examples of electronic devices. [Figure 26] Figures 26(A) to 26(G) show examples of electronic devices. [Modes for carrying out the invention]

[0023] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0024] In the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used, and reference numerals may not be assigned.

[0025] Furthermore, for the sake of ease of understanding, the position, size, and scope of each component shown in the drawings may not represent the actual position, size, and scope. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings.

[0026] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0027] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 6.

[0028] A display device according to one aspect of the present invention has a display unit in which a first array pattern and a second array pattern are repeatedly arranged in a first direction. In the first array pattern, a first sub-pixel, a second sub-pixel, and a third sub-pixel are repeatedly arranged in a second direction. In the second array pattern, a fourth sub-pixel and a fifth sub-pixel are repeatedly arranged in a second direction. Each of the first to fourth sub-pixels has a light-emitting device, and the fifth sub-pixel has a light-receiving device.

[0029] For example, one possible combination of the first to fifth subpixels is a configuration in which any four subpixels emit red (R), green (G), blue (B), and infrared (IR) light, respectively, and the remaining subpixel detects at least one of visible light and infrared light. Another possible configuration is one in which any four subpixels emit yellow (Y), cyan (C), magenta (M), and infrared (IR) light, respectively, and the remaining subpixel detects at least one of visible light and infrared light.

[0030] The longitudinal direction (also called the long side direction) of the first, second, and third subpixels is preferably the first direction. The longitudinal direction of the fourth subpixel is preferably the second direction.

[0031] For example, it is preferable that the first sub-pixel emits red light, the second sub-pixel emits green light, the third sub-pixel emits infrared light, the fourth sub-pixel emits blue light, and the fifth sub-pixel detects at least infrared light. Alternatively, it is preferable that the first sub-pixel emits green light, the second sub-pixel emits red light, the third sub-pixel emits infrared light, the fourth sub-pixel emits blue light, and the fifth sub-pixel detects at least infrared light.

[0032] In the above configuration, full-color display can be achieved using the first, second, and fourth sub-pixels. The layout of the first, second, and fourth sub-pixels is a so-called S-stripe arrangement. This enables high display quality.

[0033] In the pixel configuration described above, the third sub-pixel can be used as a light source. Preferably, the fifth sub-pixel can detect the infrared light emitted by the third sub-pixel. The fifth sub-pixel may also be capable of detecting both infrared and visible light.

[0034] The third sub-pixel preferably has the highest aperture ratio among the first to fifth sub-pixels. This improves the detection accuracy of the fifth sub-pixel.

[0035] Alternatively, it is preferable that the first sub-pixel emits red light, the second sub-pixel emits green light, the third sub-pixel emits blue light, the fourth sub-pixel emits infrared light, and the fifth sub-pixel detects at least infrared light.

[0036] In the above configuration, full-color display can be achieved using the first, second, and third sub-pixels. The layout of the first, second, and third sub-pixels is a so-called stripe arrangement. This enables high display quality.

[0037] In the above-described pixel configuration, the fourth sub-pixel can be used as a light source. Preferably, the fifth sub-pixel can detect the infrared light emitted by the fourth sub-pixel. The fifth sub-pixel may also be capable of detecting both infrared and visible light.

[0038] The fourth sub-pixel preferably has the highest aperture ratio among the first to fifth sub-pixels. This improves the detection accuracy of the fifth sub-pixel.

[0039] Here, the wavelength of the infrared light can be 750 nm or higher, and preferably 780 nm or higher. In particular, it is preferable to use near-infrared light with a wavelength of 750 nm to 2500 nm.

[0040] A display device according to one aspect of the present invention has a light-emitting device and a light-receiving device in each pixel. In this display device according to one aspect of the present invention, since the display unit has a light-receiving function, imaging can be performed using the display unit. For example, the display unit can perform imaging while displaying an image. In addition, in a pixel, some sub-pixels can emit light as a light source, and the remaining sub-pixels can display an image.

[0041] In one embodiment of the present invention, a display device has a display unit in which light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. In addition, light-receiving devices are arranged in a matrix on the display unit.

[0042] For example, an electronic device having a display device according to one aspect of the present invention may have a processing unit that uses image data captured by the display device to detect one or more of the user's blinking, pupil movement, and eyelid movement.

[0043] A display device according to one aspect of the present invention can image the area around the eye, the surface of the eye, or the inside of the eye (e.g., the fundus) using a light-receiving device. For example, a light-receiving device that detects infrared light can be used to detect one or more of the following: blinking / eyelid movement, or pupil movement. A light-receiving device that detects visible light can be used, for example, for fundus diagnosis and / or detection of eye strain. Hemoglobin levels can be detected using either visible light or infrared light or both, and detection accuracy can sometimes be improved by using both visible light and infrared light. These functions will be described in detail in Embodiment 2.

[0044] Alternatively, for example, an electronic device having a display device according to one aspect of the present invention can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0045] Furthermore, in one embodiment of the present invention, the display device can utilize the light-emitting device as the light source of the sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0046] In one embodiment of the present invention, when an object reflects (or scatters) light emitted by a light-emitting device of the display unit, a light-receiving device can detect the reflected light (or scattered light), thus enabling image capture or touch detection even in dark places.

[0047] A display device according to one aspect of the present invention has the function of displaying an image using a light-emitting device. In other words, the light-emitting device functions as a display device (also called a display element).

[0048] Preferably, the light-emitting device is an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of light-emitting materials (also referred to as luminescent materials) for the light-emitting device include fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (TADF) materials. As a TADF material, a material in thermal equilibrium between the singlet excited state and the triplet excited state may be used. Such TADF materials have a shorter emission lifetime (excitation lifetime), which can suppress the decrease in efficiency in the high-brightness region of the light-emitting device. LEDs such as microLEDs (Light Emitting Diodes) can also be used as the light-emitting device. In addition, inorganic compounds (such as quantum dot materials) can be used as the light-emitting material for the light-emitting device.

[0049] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving device.

[0050] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined by the amount of light incident on it.

[0051] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0052] In one aspect of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0053] Because organic photodiodes have many layers that can share a common structure with organic EL devices, the number of deposition steps can be suppressed by depositing these common layers in a single process.

[0054] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the photodetector and the light-emitting device. Furthermore, it is preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer be a common layer for both the photodetector and the light-emitting device.

[0055] Note that layers common to both light-receiving and light-emitting devices may have different functions in the light-emitting device and the light-receiving device. In this specification, components are referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, layers common to both light-receiving and light-emitting devices may have the same function in the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting and light-receiving devices, and an electron transport layer functions as an electron transport layer in both the light-emitting and light-receiving devices.

[0056] When manufacturing a display device having multiple organic EL devices, each with a different light-emitting layer color, it is necessary to form each light-emitting layer with a different color in an island-like structure.

[0057] For example, island-shaped light-emitting layers can be formed using a vacuum deposition method with a metal mask (also called a shadow mask). However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers due to various factors such as the precision of the metal mask, the misalignment between the metal mask and the substrate, the deflection of the metal mask, and the spreading of the contour of the formed film due to vapor scattering. This makes it difficult to achieve high resolution and high aperture ratio in display devices.

[0058] In a method for manufacturing a display device according to one aspect of the present invention, island-shaped pixel electrodes (also called lower electrodes) are formed, and a first layer (which can be called an EL layer or a part of an EL layer) containing a light-emitting layer that emits light of a first color is formed on one surface, and then a first sacrificial layer is formed on the first layer. Then, a first resist mask is formed on the first sacrificial layer, and the first layer and the first sacrificial layer are processed using the first resist mask to form an island-shaped first layer. Subsequently, a second layer (which can be called an EL layer or a part of an EL layer) containing a light-emitting layer that emits light of a second color is formed in an island shape using the second sacrificial layer and the second resist mask, similar to the first layer.

[0059] Thus, in the method for manufacturing a display device according to one aspect of the present invention, the island-shaped EL layer is not formed using a fine metal mask, but rather by processing after the EL layer has been deposited on one surface. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be manufactured separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast, and has high display quality. In addition, by providing a sacrificial layer (which may also be called a mask layer) on the EL layer, the damage that the EL layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0060] For example, it is not necessary to apply a special pixel arrangement method such as the Pentile method to artificially increase resolution; even with an arrangement method that uses three or more subpixels for a single pixel, an extremely high-resolution display device can be realized. For instance, a high-resolution display device can be realized by using three subpixels, R, G, and B, arranged in a stripe arrangement or an S-stripe arrangement.

[0061] While it is difficult to reduce the spacing between adjacent light-emitting devices to less than 10 μm using, for example, a metal mask formation method, the above method allows for narrowing the spacing to 3 μm or less, 2 μm or less, or even 1 μm or less.

[0062] Furthermore, the pattern of the EL layer itself (which can also be called the processing size) can be made extremely small compared to when a metal mask is used. Also, for example, when a metal mask is used to create different EL layers, variations in thickness occur between the center and edges of the EL layer, so the effective area that can be used as an emitting region is small relative to the area of ​​the EL layer. On the other hand, with the above manufacturing method, the EL layer is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the EL layer, and even if the pattern is fine, almost the entire area can be used as an emitting region. As a result, it is possible to manufacture a display device that combines high resolution and a high aperture ratio.

[0063] Here, the first layer and the second layer each include at least an emissive layer, and preferably consist of multiple layers. Specifically, it is preferable to have one or more layers on the emissive layer. By having other layers between the emissive layer and the sacrificial layer, it is possible to suppress the exposure of the emissive layer to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the emissive layer. This can improve the reliability of the light-emitting device.

[0064] Furthermore, in light-emitting devices that emit light of different colors, it is not necessary to create all the layers constituting the EL layer separately; some layers can be formed in the same process. In one embodiment of the present invention, a method for manufacturing a display device involves forming some of the layers constituting the EL layer in island-like structures for each color, then removing the sacrificial layer, and forming the remaining layers constituting the EL layer and a common electrode (also called an upper electrode) in common for each color of light-emitting device.

[0065] The same manufacturing methods as for light-emitting devices can be applied to light-receiving devices. The island-shaped active layer (also called the photoelectric conversion layer) of the light-receiving device is not formed using a fine metal mask, but rather by depositing a film that will become the active layer onto one surface and then processing it, so that the island-shaped active layer can be formed with a uniform thickness. In addition, by providing a sacrificial layer on the active layer, the damage that the active layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.

[0066] Figures 1(A) and 1(B) show a display device according to one embodiment of the present invention.

[0067] Figure 1(A) shows a top view of the display device 100. The display device 100 has a display unit in which a plurality of pixels 110 are arranged in a matrix, and a connection unit 140 outside the display unit. One pixel 110 is composed of five sub-pixels: sub-pixels 110R, 110G, 110B, 110IR, and 110S.

[0068] Figure 1(A) shows an example where a single pixel 110 is composed of 3 rows and 2 columns. Pixel 110 has a sub-pixel 110R in the first row, a sub-pixel 110G in the second row, and a sub-pixel 110B spanning these two rows. It also has two sub-pixels (sub-pixels 110IR and 110S) in the third row. In other words, pixel 110 has three sub-pixels (sub-pixels 110R, 110G, and 110IR) in the left column (column 1) and two sub-pixels (sub-pixels 110B and 110S) in the right column (column 2).

[0069] In the display unit shown in Figure 1(A), it can be said that the first array pattern and the second array pattern are repeatedly arranged in the X direction. In the first array pattern, sub-pixels 110R, 110G, and 110IR are repeatedly arranged in the Y direction, and the longitudinal direction of sub-pixels 110R, 110G, and 110IR is the X direction. In the second array pattern, sub-pixels 110B and 110S are repeatedly arranged in the Y direction, and the longitudinal direction of sub-pixel 110B is the Y direction. Sub-pixel 110S has the lowest aperture ratio among the five sub-pixels.

[0070] Sub-pixel 110R emits red light. Sub-pixel 110G emits green light. Sub-pixel 110B emits blue light. Sub-pixel 110IR emits infrared light. Sub-pixel 110S detects at least infrared light. Sub-pixel 110S may be able to detect both infrared and visible light.

[0071] The pixels can display in full color using sub-pixels 110R, 110G, and 110B. The layout of sub-pixels 110R, 110G, and 110B is a so-called S-stripe arrangement. This enables high display quality.

[0072] The sub-pixel 110IR can be used as a light source, and the sub-pixel 110S can detect the infrared light emitted by the sub-pixel 110IR.

[0073] Sub-pixels 110R, 110G, 110B, and 110IR each have a light-emitting device, and sub-pixel 110S has a light-receiving device.

[0074] In Figure 1(A), the aperture ratios (size, also known as the size of the light-emitting area) of the sub-pixels 110R, 110G, 110B, and 110IR are shown to be equal or approximately equal, but one aspect of the present invention is not limited thereto. The aperture ratios of the sub-pixels 110R, 110G, 110B, and 110IR may be different, or two or more may be equal or approximately equal.

[0075] Figure 1(A) shows an example where the aperture ratio of sub-pixel 110S is the lowest among sub-pixels 110R, 110G, 110B, 110IR, and 110S. A smaller light-receiving area for sub-pixel 110S results in a narrower imaging range, which suppresses blurring in the image and improves resolution. Therefore, it is preferable to be able to perform high-definition or high-resolution imaging. The aperture ratios of sub-pixels 110R, 110G, 110B, 110IR, and 110S can be determined as appropriate.

[0076] Figures 2(A) to 2(D) show other configuration examples of the pixel 110.

[0077] Each pixel 110 shown in Figures 2(A) to 2(D) is composed of five subpixels: subpixels 110R, 110G, 110B, 110IR, and 110S.

[0078] Figure 2(A) shows an example where a single pixel 110 is composed of 3 rows and 2 columns. Pixel 110 has sub-pixel 110G in the first row, sub-pixel 110R in the second row, and sub-pixel 110B spanning these two rows. It also has two sub-pixels (sub-pixels 110IR and 110S) in the third row. In other words, pixel 110 has three sub-pixels (sub-pixels 110G, 110R, and 110IR) in the left column (column 1) and two sub-pixels (sub-pixels 110B and 110S) in the right column (column 2).

[0079] Figure 2(B) shows an example where one pixel 110 is composed of 3 rows and 2 columns. Pixel 110 has sub-pixel 110G in the first row, sub-pixel 110R in the second row, and sub-pixel 110IR in the third row. Sub-pixel 110B is located from the first to the second row, and sub-pixel 110S is located from the second to the third row. In other words, pixel 110 has three sub-pixels (sub-pixels 110G, 110R, and 110IR) in the left column (first column) and two sub-pixels (sub-pixels 110B and 110S) in the right column (second column).

[0080] In the display unit having pixels 110 as shown in Figures 2(A) and 2(B), it can also be said that the first array pattern and the second array pattern are repeatedly arranged in the X direction. In the first array pattern, sub-pixels 110G, 110R, and 110IR are repeatedly arranged in the Y direction, and the longitudinal direction of sub-pixels 110G, 110R, and 110IR is the X direction. In the second array pattern, sub-pixels 110B and 110S are repeatedly arranged in the Y direction, and the longitudinal direction of sub-pixel 110B is the Y direction.

[0081] Sub-pixel 110R emits red light. Sub-pixel 110G emits green light. Sub-pixel 110B emits blue light. Sub-pixel 110IR emits infrared light. Sub-pixel 110S detects at least infrared light. Sub-pixel 110S may be able to detect both infrared and visible light.

[0082] The pixels can display in full color using sub-pixels 110R, 110G, and 110B. The layout of sub-pixels 110R, 110G, and 110B is a so-called S-stripe arrangement. This enables high display quality.

[0083] The sub-pixel 110IR can be used as a light source, and the sub-pixel 110S can detect the infrared light emitted by the sub-pixel 110IR.

[0084] In Figures 2(A) and 2(B), the aperture ratio of sub-pixel 110B and sub-pixel 110S are equal or approximately equal. Also, in Figure 2(A), the aperture ratio of sub-pixel 110IR is higher than that of sub-pixels 110G and 110R. In the pixel 110 shown in Figure 2(A), sub-pixel 110IR has the highest aperture ratio among sub-pixels 110R, 110G, 110B, 110IR, and 110S. On the other hand, Figure 2(B) shows an example where the aperture ratios of sub-pixels 110G, 110R, and 110IR are equal or approximately equal.

[0085] Figures 2(C) and 2(D) show an example where a single pixel 110 is composed of 2 rows and 3 columns. Pixel 110 has three subpixels (subpixels 110R, 110G, and 110B) in the first row, and two subpixels (subpixels 110IR and 110S) in the second row. In other words, pixel 110 has subpixel 110R in the left column (1st column), subpixel 110G in the middle column (2nd column), and subpixel 110IR extending from the left column to the middle column. It also has two subpixels (subpixels 110B and 110S) in the right column (3rd column).

[0086] In the display unit having pixels 110 as shown in Figure 2(C) or Figure 2(D), it can also be said that the first array pattern and the second array pattern are repeatedly arranged in the Y direction. In the first array pattern, sub-pixels 110R, 110G, and 110B are repeatedly arranged in the X direction, and the longitudinal direction of sub-pixels 110R, 110G, and 110B is the Y direction. In the second array pattern, sub-pixels 110IR and 110S are repeatedly arranged in the X direction, and the longitudinal direction of sub-pixel 110IR is the X direction.

[0087] Sub-pixel 110R emits red light. Sub-pixel 110G emits green light. Sub-pixel 110B emits blue light. Sub-pixel 110IR emits infrared light. Sub-pixel 110S detects at least infrared light. Sub-pixel 110S may be able to detect both infrared and visible light.

[0088] The pixels can display in full color using sub-pixels 110R, 110G, and 110B. In the pixel 110 shown in Figures 2(C) and 2(D), the layout of sub-pixels 110R, 110G, and 110B is a so-called stripe arrangement. This enables high display quality.

[0089] The sub-pixel 110IR can be used as a light source, and the sub-pixel 110S can detect the infrared light emitted by the sub-pixel 110IR.

[0090] In Figure 2(C), the aperture ratios of sub-pixels 110R, 110G, 110B, and 110IR are all equal or approximately equal. Furthermore, among sub-pixels 110R, 110G, 110B, 110IR, and 110S, sub-pixel 110S has the lowest aperture ratio. Note that, as with sub-pixels 110B and 110S in Figure 2(B), the aperture ratios of sub-pixels 110IR and 110S in Figure 2(C) may be equal or approximately equal.

[0091] In Figure 2(D), pixel 110 has sub-pixels 110R, 110G, 110B, and 110S, all of which have equal or approximately equal aperture ratios. Of the sub-pixels 110R, 110G, 110B, 110IR, and 110S, sub-pixel 110IR has the highest aperture ratio.

[0092] Figure 1(A) shows an example where the connecting portion 140 is located below the display portion in a top view, but it is not particularly limited. The connecting portion 140 only needs to be provided at least one location on the top, right, left, or bottom of the display portion in a top view, and may be provided so as to surround all four sides of the display portion. The top shape of the connecting portion 140 can be a strip, L-shape, U-shape, or frame shape, etc. Also, there may be one or more connecting portions 140.

[0093] Figure 1(B) shows cross-sectional views between the dashed lines X1-X2, X3-X4, and Y1-Y2 in Figure 1(A). Furthermore, as modified examples, Figures 3(A) to 3(C), 4(A) and 4(B), and 5(A) to 5(C) show cross-sectional views between the dashed lines X1-X2 and Y1-Y2 in Figure 1(A).

[0094] As shown in Figure 1(B), the display device 100 has light-emitting devices 130R, 130G, 130B, 130IR and a light-receiving device 150 arranged on a layer 101 containing transistors, and a protective layer 131 is provided to cover these light-emitting devices and light-receiving devices. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. In addition, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between two adjacent devices (a light-emitting device and a light-receiving device, two light-emitting devices, or two light-receiving devices).

[0095] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides.

[0096] The layer 101 containing transistors can be, for example, a laminated structure in which multiple transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The layer 101 containing transistors may have recesses between two adjacent devices. For example, recesses may be provided in the insulating layer located on the outermost surface of the layer 101 containing transistors. An example of the configuration of the layer 101 containing transistors will be described later in Embodiment 4.

[0097] Light-emitting device 130R emits red (R) light. Light-emitting device 130G emits green (G) light. Light-emitting device 130B emits blue (B) light. Light-emitting device 130IR emits infrared (IR) light.

[0098] The light-emitting device has an EL layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0099] In a light-emitting device, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0100] The light-emitting device 130R includes a conductive layer 111a on a layer 101 containing a transistor, an island-shaped first layer 113a on the conductive layer 111a, a sixth layer 114 on the island-shaped first layer 113a, and a common electrode 115 on the sixth layer 114. The conductive layer 111a functions as a pixel electrode. In the light-emitting device 130R, the first layer 113a and the sixth layer 114 can be collectively called the EL layer. For an example of the configuration of the light-emitting device, refer to the description in Embodiment 5.

[0101] The first layer 113a includes, for example, a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer. Alternatively, the first layer 113a includes, for example, a first light-emitting unit, a charge generation layer, and a second light-emitting unit.

[0102] The sixth layer 114 may, for example, have an electron injection layer. Alternatively, the sixth layer 114 may have an electron transport layer and an electron injection layer laminated together.

[0103] The light-emitting device 130G includes a conductive layer 111b on a layer 101 containing a transistor, an island-shaped second layer 113b on the conductive layer 111b, a sixth layer 114 on the island-shaped second layer 113b, and a common electrode 115 on the sixth layer 114. The conductive layer 111b functions as a pixel electrode. In the light-emitting device 130G, the second layer 113b and the sixth layer 114 can be collectively called the EL layer.

[0104] The light-emitting device 130IR includes a conductive layer 111c on a layer 101 containing a transistor, an island-shaped third layer 113c on the conductive layer 111c, a sixth layer 114 on the island-shaped third layer 113c, and a common electrode 115 on the sixth layer 114. The conductive layer 111c functions as a pixel electrode. In the light-emitting device 130IR, the third layer 113c and the sixth layer 114 can be collectively referred to as the EL layer.

[0105] The light-emitting device 130B includes a conductive layer 111d on a layer 101 containing a transistor, an island-shaped fourth layer 113d on the conductive layer 111d, a sixth layer 114 on the island-shaped fourth layer 113d, and a common electrode 115 on the sixth layer 114. The conductive layer 111d functions as a pixel electrode. In the light-emitting device 130B, the fourth layer 113d and the sixth layer 114 can be collectively called the EL layer.

[0106] The photodetector has an active layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0107] The light-receiving device can be configured to detect either infrared light or visible light, or both. Configurations for detecting visible light include detecting one or more of the following colors: blue, violet, blue-violet, green, yellow-green, yellow, orange, and red.

[0108] In a photodetector, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode. The photodetector can detect incoming light, generate an electric charge, and extract it as an electric current by applying a reverse bias between the pixel electrode and the common electrode. Alternatively, the pixel electrode may function as the cathode and the common electrode as the anode.

[0109] The light-receiving device 150 includes a conductive layer 111e on a layer 101 containing a transistor, an island-shaped fifth layer 113e on the conductive layer 111e, a sixth layer 114 on the island-shaped fifth layer 113e, and a common electrode 115 on the sixth layer 114. The conductive layer 111e functions as a pixel electrode.

[0110] The fifth layer 113e has at least an active layer. The fifth layer 113e may further have one or more layers selected from a hole transport layer, an electron blocking layer, a hole blocking layer, and an electron transport layer.

[0111] The sixth layer 114 is a layer common to both the light-emitting device and the light-receiving device. As described above, the sixth layer 114 has, for example, an electron injection layer. Alternatively, the sixth layer 114 may have an electron transport layer and an electron injection layer stacked together.

[0112] The common electrode 115 is electrically connected to the conductive layer 123 provided in the connection portion 140. In Figure 1(B), an example is shown in which a sixth layer 114 is provided on the conductive layer 123, and the conductive layer 123 and the common electrode 115 are electrically connected via the sixth layer 114. The sixth layer 114 does not necessarily have to be provided in the connection portion 140. For example, in Figure 3(C), an example is shown in which the sixth layer 114 is not provided on the conductive layer 123, and the conductive layer 123 and the common electrode 115 are directly connected.

[0113] For example, by using a mask to define the film deposition area (also called an area mask or rough metal mask), the region where the film is deposited on the sixth layer 114 and the common electrode 115 can be changed.

[0114] Each side of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e is covered by insulating layers 125 and 127. This prevents the sixth layer 114 (or common electrode 115) from coming into contact with any side of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e, thereby preventing short circuits in the light-emitting device and the light-receiving device. This improves the reliability of the light-emitting device and the light-receiving device.

[0115] The insulating layer 125 preferably covers at least the sides of the conductive layers 111a to 111e. Furthermore, it is preferable that the insulating layer 125 covers the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e. The insulating layer 125 can be configured to be in contact with each of the sides of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e.

[0116] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap (or cover) the sides of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e via the insulating layer 125.

[0117] By providing insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, thereby reducing the unevenness of the surface of the layer (e.g., common electrode) formed on the island-shaped layer, making it flatter. Consequently, the coverage of the common electrode can be improved, and step breaks in the common electrode can be prevented.

[0118] Furthermore, the insulating layer 125 or insulating layer 127 can be provided in contact with the island-shaped layers. This prevents the peeling of the island-shaped layers. The close contact between the insulating layer and the island-shaped layers provides the effect of fixing or bonding adjacent island-shaped layers to each other.

[0119] An organic resin film is preferred for the insulating layer 127. When the side surface of the EL layer and the photosensitive organic resin film are in direct contact, organic solvents that may be contained in the photosensitive organic resin film may damage the EL layer. By using an aluminum oxide film formed by atomic layer deposition (ALD) for the insulating layer 125, it is possible to create a configuration in which the photosensitive organic resin film used for the insulating layer 127 and the side surface of the EL layer do not come into direct contact. This makes it possible to suppress the dissolution of the EL layer by organic solvents.

[0120] Furthermore, it is not necessary to provide either the insulating layer 125 or the insulating layer 127. For example, by forming a single-layer insulating layer 125 using an inorganic material, the insulating layer 125 can be used as a protective insulating layer for the EL layer. This can improve the reliability of the display device. Alternatively, by forming a single-layer insulating layer 127 using an organic material, for example, the space between adjacent EL layers can be filled with the insulating layer 127 and flattened. This can improve the coverage of the common electrode (upper electrode) formed on the EL layer and the insulating layer 127.

[0121] Figure 3(A) shows an example where the insulating layer 125 is not provided. When the insulating layer 125 is not provided, the insulating layer 127 can be configured to be in contact with the respective sides of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e. The insulating layer 127 can be provided to fill the spaces between the EL layers of each light-emitting device.

[0122] In this case, it is preferable to use an organic material for the insulating layer 127 that causes little damage to the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e. For example, it is preferable to use an organic material for the insulating layer 127 such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0123] Figure 3(B) also shows an example where the insulating layer 127 is not provided.

[0124] The sixth layer 114 and the common electrode 115 are provided on the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, the fifth layer 113e, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step difference occurs due to the region where the pixel electrode and EL layer are provided and the region where the pixel electrode and EL layer are not provided (the region between the light-emitting devices). In one embodiment of the present invention, the presence of the insulating layer 125 and the insulating layer 127 can flatten this step difference and improve the coverage of the sixth layer 114 and the common electrode 115. Therefore, connection failures due to step breaks can be suppressed. Alternatively, it is possible to suppress the local thinning of the common electrode 115 due to the step difference, which would increase its electrical resistance.

[0125] To improve the flatness of the formation surfaces of the sixth layer 114 and the common electrode 115, it is preferable that the heights of the upper surfaces of the insulating layer 125 and the insulating layer 127 match or approximately match the height of at least one of the upper surfaces of the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e, respectively. Furthermore, it is preferable that the upper surface of the insulating layer 127 has a flat shape, and may have convex portions, convex curved surfaces, concave curved surfaces, or recesses.

[0126] The insulating layer 125 has regions that are in contact with the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e, and functions as a protective insulating layer for the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e. By providing the insulating layer 125, it is possible to suppress the intrusion of impurities (oxygen, moisture, etc.) into the interior from the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e, resulting in a highly reliable display device.

[0127] In a cross-sectional view, if the width (thickness) of the insulating layer 125 in the region in contact with the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e is large, the spacing between the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e may increase, resulting in a lower aperture ratio. Conversely, if the width (thickness) of the insulating layer 125 is small, the effect of suppressing the intrusion of impurities into the interior from the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e may be reduced. The width (thickness) of the insulating layer 125 in the region in contact with the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fourth layer 113d, and the fifth layer 113e is preferably 3 nm to 200 nm, more preferably 3 nm to 150 nm, more preferably 5 nm to 150 nm, more preferably 5 nm to 100 nm, more preferably 10 nm to 100 nm, and more preferably 10 nm to 50 nm. By setting the width (thickness) of the insulating layer 125 within the above range, a display device with a high aperture ratio and high reliability can be made.

[0128] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride oxide film and aluminum nitride oxide film. In particular, aluminum oxide is preferred because it has a high selectivity ratio with the EL layer during etching and has the function of protecting the EL layer during the formation of the insulating layer 127, which will be described later. In particular, by applying an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by the ALD method to the insulating layer 125, it is possible to form an insulating layer 125 with fewer pinholes and excellent function in protecting the EL layer. Alternatively, the insulating layer 125 may have a laminated structure of a film formed by the ALD method and a film formed by the sputtering method. For example, the insulating layer 125 may have a laminated structure of an aluminum oxide film formed by the ALD method and a silicon nitride film formed by the sputtering method.

[0129] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0130] Methods for forming the insulating layer 125 include sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD), and ALD. The insulating layer 125 is preferably formed using the ALD method, which provides good coverage.

[0131] The insulating layer 127 provided on the insulating layer 125 has the function of flattening the recess in the insulating layer 125 formed between adjacent light-emitting devices. In other words, the presence of the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. Suitable insulating layers 127 include those made of organic materials. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127. Furthermore, a photosensitive resin can be used as the insulating layer 127. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0132] The difference between the height of the upper surface of the insulating layer 127 and the height of the upper surface of any of the first layer 113a, second layer 113b, third layer 113c, fourth layer 113d, and fifth layer 113e is preferably 0.5 times or less the thickness of the insulating layer 127, and more preferably 0.3 times or less. Alternatively, the insulating layer 127 may be provided such that the upper surface of any of the first layer 113a, second layer 113b, third layer 113c, fourth layer 113d, and fifth layer 113e is higher than the upper surface of the insulating layer 127. Alternatively, the insulating layer 127 may be provided such that the upper surface of the insulating layer 127 is higher than the upper surface of the light-emitting layer of the first layer 113a, second layer 113b, third layer 113c, or fourth layer 113d.

[0133] It is preferable to have a protective layer 131 on the light-emitting devices 130R, 130G, 130B, 130IR and the light-receiving device 150. Providing the protective layer 131 can improve the reliability of the light-emitting devices and the light-receiving devices.

[0134] The conductivity of the protective layer 131 is not required. The protective layer 131 can be at least one of an insulating film, a semiconductor film, and a conductive film.

[0135] The presence of an inorganic film in the protective layer 131 prevents oxidation of the common electrode 115 and suppresses the ingress of impurities (such as moisture and oxygen) into the light-emitting devices 130R, 130G, 130B, 130IR and the light-receiving device 150. Therefore, degradation of the light-emitting and light-receiving devices is suppressed, and the reliability of the display device can be improved.

[0136] For the protective layer 131, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples of nitride oxide insulating films include silicon nitride films and aluminum nitride films.

[0137] The protective layer 131 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.

[0138] Furthermore, the protective layer 131 may also be an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 115. The inorganic film may further contain nitrogen.

[0139] When the light emitted from a light-emitting device is extracted via a protective layer 131, it is preferable that the protective layer 131 has high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0140] As the protective layer 131, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using such a laminated structure, it is possible to suppress the penetration of impurities (such as water and oxygen) into the EL layer.

[0141] Furthermore, the protective layer 131 may have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film.

[0142] The upper edges of each conductive layer 111a to conductive layer 111e are not covered by an insulating layer. Therefore, the spacing between adjacent light-emitting devices can be made extremely narrow. Consequently, a high-definition or high-resolution display device can be made.

[0143] As shown in Figures 4(A) and 4(B), the ends of each of the conductive layers 111a to 111c may be covered by the insulating layer 121.

[0144] The insulating layer 121 can be a single-layer structure or a multilayer structure using one or both of an inorganic insulating film and an organic insulating film.

[0145] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimidoamide resin, polysiloxane resin, benzocyclobutene resin, and phenolic resin. Furthermore, inorganic insulating films that can be used for the protective layer 131 can be used as inorganic insulating films for the insulating layer 121.

[0146] When an inorganic insulating film is used as the insulating layer 121 covering the edges of the pixel electrodes, impurities are less likely to enter the light-emitting device compared to when an organic insulating film is used, thereby improving the reliability of the light-emitting device. When an organic insulating film is used as the insulating layer 121 covering the edges of the pixel electrodes, the step coverage is higher compared to when an inorganic insulating film is used, and it is less affected by the shape of the pixel electrodes. Therefore, short circuits in the light-emitting device can be prevented. Specifically, when an organic insulating film is used as the insulating layer 121, the shape of the insulating layer 121 can be processed into a tapered shape or the like. In this specification, a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface or the surface to be formed. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface or the surface to be formed is less than 90°.

[0147] The insulating layer 121 is optional. Omitting the insulating layer 121 may increase the aperture ratio of the subpixels. Alternatively, it may be possible to reduce the distance between subpixels, thereby increasing the detail or resolution of the display device.

[0148] In Figure 4(A), an example is shown in which the sixth layer 114 extends into the region between the first layer 113a and the second layer 113b. However, as shown in Figure 4(B), a void 134 may be formed in that region.

[0149] The void 134 may contain one or more of the following: air, nitrogen, oxygen, carbon dioxide, and Group 18 elements (typically helium, neon, argon, xenon, and krypton). Alternatively, resin or the like may be embedded in the void 134.

[0150] Furthermore, Figure 1(A), etc., shows an example where the edges of the conductive layer 111a and the edges of the first layer 113a are aligned or approximately aligned. In other words, the upper surface shapes of the conductive layer 111a and the first layer 113a are identical or approximately identical.

[0151] The relative sizes of the conductive layers 111a and the first layer 113a, the conductive layer 111b and the second layer 113b, and the conductive layer 111c and the third layer 113c are not particularly limited. Figure 5(A) shows an example where the edge of the first layer 113a is located inward from the edge of the conductive layer 111a. In Figure 5(A), the edge of the first layer 113a is located on the conductive layer 111a. Figure 5(B) shows an example where the edge of the first layer 113a is located outward from the edge of the conductive layer 111a. In Figure 5(B), the first layer 113a is provided so as to cover the edge of the conductive layer 111a.

[0152] Furthermore, if the edges are aligned or roughly aligned, and the top surface shapes match or roughly match, then in a top view, at least a portion of the contours overlaps between the stacked layers. This includes, for example, cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer; in this case as well, the edges are said to be roughly aligned, or the top surface shapes roughly match.

[0153] Furthermore, Figure 5(C) shows a modified example of the insulating layer 127. In Figure 5(C), the upper surface of the insulating layer 127 has a shape that bulges gently towards the center, i.e., a convex curved surface, and a shape that is concave in the center and its vicinity, i.e., a concave curved surface, when viewed in cross-section.

[0154] Figures 6(A) to 6(F) show the cross-sectional structure of the region 139 including the insulating layer 127 and its surrounding area.

[0155] Figure 6(A) shows an example where the thicknesses of the first layer 113a and the second layer 113b are different. The height of the upper surface of the insulating layer 125 is the same as or approximately the same as the height of the upper surface of the first layer 113a on the first layer 113a side, and the height is the same as or approximately the same as the height of the upper surface of the second layer 113b on the second layer 113b side. The upper surface of the insulating layer 127 has a gentle slope, with the first layer 113a side being higher and the second layer 113b side being lower. Thus, it is preferable that the heights of the insulating layer 125 and insulating layer 127 are the same as the height of the upper surface of the adjacent EL layer. Alternatively, the upper surfaces of the insulating layer 125 and insulating layer 127 may each have a flat portion whose height is the same as the upper surface of either of the adjacent EL layers.

[0156] In Figure 6(B), the upper surface of the insulating layer 127 has a region that is higher than the upper surface of the first layer 113a and the upper surface of the second layer 113b. As shown in Figure 6(B), the upper surface of the insulating layer 127 can have a shape that is convex in the center and its vicinity when viewed in cross-section, that is, a shape that has a convex curved surface.

[0157] In Figure 6(C), the upper surface of the insulating layer 127 has a shape that bulges gently toward the center, i.e., a convex curved surface, and a shape that is concave in the center and its vicinity, i.e., a concave curved surface, in cross-sectional view. The insulating layer 127 has a region that is higher than the upper surface of the first layer 113a and the upper surface of the second layer 113b. In region 139, the display device has at least one of the sacrificial layer 118a and the sacrificial layer 119a, and has a first region in which the insulating layer 127 is higher than the upper surface of the first layer 113a and the upper surface of the second layer 113b and is located outside the insulating layer 125, and the first region is located on at least one of the sacrificial layer 118a and the sacrificial layer 119a. Furthermore, in region 139, the display device has at least one of the sacrificial layer 118b and the sacrificial layer 119b, and has a second region in which the insulating layer 127 is higher than the upper surface of the first layer 113a and the upper surface of the second layer 113b and is located outside the insulating layer 125, and the second region is located on at least one of the sacrificial layer 118b and the sacrificial layer 119b.

[0158] In Figure 6(D), the upper surface of the insulating layer 127 has a region that is lower than the upper surfaces of the first layer 113a and the second layer 113b. Furthermore, in cross-sectional view, the upper surface of the insulating layer 127 has a concave shape, meaning that the center and its vicinity are recessed.

[0159] In Figure 6(E), the upper surface of the insulating layer 125 has a region that is higher than the upper surfaces of the first layer 113a and the second layer 113b. That is, on the surface where the sixth layer 114 is formed, the insulating layer 125 protrudes, forming a convex portion.

[0160] In forming the insulating layer 125, for example, if the insulating layer 125 is formed to match or approximately match the height of the sacrificial layer, a protruding shape of the insulating layer 125 may be formed, as shown in Figure 6(E).

[0161] In Figure 6(F), the upper surface of the insulating layer 125 has a region that is lower than the upper surface of the first layer 113a and the upper surface of the second layer 113b. That is, the insulating layer 125 forms a recess on the surface on which the sixth layer 114 is formed.

[0162] Thus, the insulating layer 125 and the insulating layer 127 can be made into various shapes.

[0163] As the sacrificial layer, one or more types of inorganic films such as metal films, alloy films, metal oxide films, semiconductor films, and inorganic insulating films can be used.

[0164] For example, the sacrificial layer can be made of metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, as well as alloy materials containing such metallic materials.

[0165] Furthermore, metal oxides such as In-Ga-Zn oxide can be used as the sacrificial layer. For example, an In-Ga-Zn oxide film can be formed as the sacrificial layer using a sputtering method. In addition, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), and indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide) can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0166] In addition, element M (where M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium.

[0167] Furthermore, various inorganic insulating films that can be used for the protective layer 131 can be used as the sacrificial layer. In particular, oxide insulating films are preferred because they have higher adhesion to the EL layer compared to nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used as the sacrificial layer. As the sacrificial layer, for example, an aluminum oxide film can be formed using the ALD method. Using the ALD method is preferable because it reduces damage to the substrate (especially the EL layer). As the sacrificial layer, for example, a silicon nitride film can be formed using the sputtering method.

[0168] For example, a laminated structure can be applied in which an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method and an In-Ga-Zn oxide film formed using the sputtering method are used as the sacrificial layer. Alternatively, a laminated structure can be applied in which an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method and an aluminum film, tungsten film, or inorganic insulating film (e.g., a silicon nitride film) formed using the sputtering method are used as the sacrificial layer.

[0169] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0170] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. The SBS structure allows for the optimization of materials and configuration for each light-emitting device, thus increasing the freedom of material and configuration selection and making it easier to improve brightness and reliability.

[0171] Furthermore, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0172] Furthermore, light-emitting devices can be broadly classified into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that the light-emitting unit includes one or more light-emitting layers. When obtaining white light emission using two light-emitting layers, the light-emitting layers should be selected such that their emission colors are complementary. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, a configuration that emits white light as a whole can be obtained. Also, when obtaining white light emission using three or more light-emitting layers, the combination of the emission colors of the three or more light-emitting layers should result in a configuration that emits white light as a whole.

[0173] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, the device should be configured such that the light from the light-emitting layers of the multiple light-emitting units is combined to produce white light emission. The configuration for obtaining white light emission is the same as that for a single-structure device. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0174] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use SBS structure light-emitting devices. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0175] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices, the distance between EL layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of the first layer 113a and the side surface of the second layer 113b, or the distance between the side surface of the second layer 113b and the side surface of the third layer 113c, has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0176] Furthermore, the distance between the light-emitting device and the light-receiving device can also be within the above range. In addition, to suppress leakage between the light-emitting device and the light-receiving device, it is preferable to make the distance between the light-emitting device and the light-receiving device wider than the distance between the light-emitting devices. For example, the distance between the light-emitting device and the light-receiving device can be 8 μm or less, 5 μm or less, or 3 μm or less.

[0177] On the side of the substrate 120 facing the resin layer 122, one or both of a light-shielding layer and / or a color filter may be provided. In addition, various optical components can be arranged on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may be arranged on the outside of the substrate 120.

[0178] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. If a flexible material is used for the substrate 120, the flexibility of the display device can be increased, and a flexible display can be realized. Alternatively, a polarizing plate may be used as the substrate 120.

[0179] As the substrate 120, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. may be used. Glass with a thickness sufficient to provide flexibility may also be used as the substrate 120.

[0180] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0181] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0182] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0183] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0184] As the resin layer 122, various types of curing adhesives can be used, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0185] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0186] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes that constitute a display device, and as conductive layers (conductive layers that function as pixel electrodes or common electrodes) in light-emitting devices.

[0187] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0188] Next, we will describe materials that can be used in light-emitting devices and light-receiving devices.

[0189] Of the pixel electrodes and common electrodes, the electrode that extracts light should preferably use a conductive film that transmits visible light and infrared light. Furthermore, it is preferable to use a conductive film that reflects visible light and infrared light on the electrode that does not extract light.

[0190] As materials for forming the pair of electrodes (pixel electrode and common electrode) of the light-emitting device and light-receiving device, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver, palladium, and copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, etc., can also be used.

[0191] It is preferable that the light-emitting device and the light-receiving device have a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device and the light-receiving device has an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be made to resonate between the two electrodes, thereby strengthening the light emitted from the light-emitting device. By having a microcavity structure in the light-receiving device, the light received by the active layer can be made to resonate between the two electrodes, thereby strengthening the light and improving the detection accuracy of the light-receiving device.

[0192] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0193] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode in the light-emitting device that has a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 It is preferable that the transmittance or reflectance of these electrodes to near-infrared light (light with a wavelength of 750 nm to 1300 nm) satisfies the above numerical range, similar to the transmittance or reflectance of visible light.

[0194] The first layer 113a, the second layer 113b, the third layer 113c, and the fourth layer 113d each have an emissive layer. Preferably, the first layer 113a, the second layer 113b, the third layer 113c, and the fourth layer 113d each have an emissive layer that emits light of a different color.

[0195] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0196] Examples of luminescent materials include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and quantum dot materials.

[0197] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0198] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0199] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0200] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0201] The first layer 113a, the second layer 113b, the third layer 113c, and the fourth layer 113d may further include layers other than the light-emitting layer that contain a material with high hole injection properties, a material with high hole transport properties (also referred to as a hole-transporting material), a hole-blocking material, a material with high electron transport properties (also referred to as an electron-transporting material), a material with high electron injection properties, an electron-blocking material, or a bipolar material (a material with high electron transport and hole transport properties, also referred to as a bipolar material).

[0202] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0203] For example, the first layer 113a, the second layer 113b, the third layer 113c, and the fourth layer 113d may each have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. Furthermore, the first layer 113a, the second layer 113b, the third layer 113c, and the fourth layer 113d may each have a charge generation layer (also called an intermediate layer).

[0204] The sixth layer 114 may have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, when conductive layers 111a to 111d function as anodes and the common electrode 115 functions as a cathode, it is preferable that the sixth layer 114 has an electron injection layer.

[0205] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0206] In a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving device, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer containing a hole-transporting material. As a hole-transporting material, 1 × 10 -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0207] In light-emitting devices, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In light-receiving devices, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer containing an electron-transporting material. As an electron-transporting material, 1 × 10 -6 cm 2Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds, which are all highly electron-transporting materials.

[0208] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a material with high electron-injection properties. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron-injection properties. Composite materials containing both electron-transporting materials and donor materials (electron-donating materials) can also be used as materials with high electron-injection properties.

[0209] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO2). x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0210] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0211] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In addition, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can generally be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0212] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0213] As the charge generation layer, for example, a material applicable to the electron injection layer, such as lithium, can be suitably used. Alternatively, as the charge generation layer, a material applicable to the hole injection layer can be suitably used. Furthermore, the charge generation layer can include a layer containing a hole transport material and an acceptor material (electron-accepting material). Additionally, the charge generation layer can include a layer containing an electron transport material and a donor material. By forming a charge generation layer having such layers, it is possible to suppress the increase in driving voltage when light-emitting units are stacked.

[0214] The fifth layer 113e has an active layer.

[0215] The active layer contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In the present embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed by the same method (for example, vacuum evaporation method), and it is preferable because the manufacturing apparatus can be shared.

[0216] Examples of the material of the n-type semiconductor included in the active layer include electron-accepting organic semiconductor materials such as fullerenes (for example, C 60 , C 70 , etc.), and fullerene derivatives. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Fullerenes have both deep (low) HOMO levels and LUMO levels. Since fullerenes have deep LUMO levels, they have extremely high electron-accepting (acceptor) properties. Usually, when π-electron conjugation (resonance) spreads in a plane like benzene, the electron-donating (donor) property increases. However, since fullerenes have a spherical shape, despite the large spread of π electrons, they have high electron-accepting properties. High electron-accepting properties are beneficial for a light-receiving device because charge separation occurs efficiently at high speed. C 60 , C 70 both have a broad absorption band in the visible light region. In particular, C [[ID=2)]. 70 is preferable because it has a larger π-electron conjugation system than C 60 and also has a broad absorption band in the long wavelength region. In addition, examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), 1’,1’’,4’,4’’-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2’,3’,56,60:2’’,3’’][5,6]fullerene-C60 (abbreviation: ICBA), and the like.

[0217] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0218] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0219] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indrocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0220] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0221] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0222] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0223] The fifth layer 113e may further include layers other than the active layer, such as a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, an electron blocking material, or a bipolar material (a material with high electron and hole transport properties). The fifth layer 113e may also include various functional layers that can be used in the first layer 113a, the second layer 113b, the third layer 113c, and the fourth layer 113d.

[0224] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0225] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0226] Furthermore, the active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0227] Furthermore, the active layer may contain a mixture of three or more materials. For example, to broaden the absorption wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0228] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute display devices can be formed using sputtering, CVD, vacuum deposition, PLD, ALD, and other methods. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0229] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife coating, slit coating, roll coating, curtain coating, and knife coating.

[0230] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). Functional layers included in the EL layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing methods (inkjet, screen printing, offset printing, flexographic printing, gravure, or microcontact printing, etc.).

[0231] Furthermore, when processing the thin film that constitutes the display device, photolithography or the like can be used. Alternatively, the thin film may be processed by nanoimprint lithography, sandblasting, lift-off lithography, or the like. In addition, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0232] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0233] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0234] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0235] As described above, the display device of this embodiment has sub-pixels having light-emitting devices used for image display, sub-pixels having light-emitting devices used as light sources, and sub-pixels having light-receiving devices used for imaging. This makes it possible to increase the functionality of electronic devices.

[0236] Furthermore, in the display device of this embodiment, the island-shaped EL layer is formed not using a fine metal mask, but by processing after the EL layer has been deposited on one surface, thus enabling the formation of island-shaped EL layers with a uniform thickness. In addition, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Moreover, it is possible to realize a high-definition display device or a display device with a high aperture ratio that has a light detection function and incorporates a light receiving device.

[0237] The first, second, third, and fourth layers, which constitute each color of light-emitting device, are formed in separate processes. Therefore, each EL layer can be manufactured with a configuration (material, film thickness, etc.) suitable for each color of light-emitting device. This makes it possible to manufacture light-emitting devices with good characteristics. Furthermore, since the fifth layer is also formed in a separate process from the first to fourth layers, the light-receiving device can also be manufactured with an appropriate configuration (material, film thickness, etc.) regardless of the configuration of the light-emitting device. This makes it possible to manufacture light-receiving devices with good characteristics.

[0238] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0239] (Embodiment 2) In this embodiment, a display device according to one aspect of the present invention and an electronic device according to one aspect of the present invention using the display device will be described with reference to Figure 7.

[0240] Figure 7(A) is a schematic cross-sectional view showing the positional relationship between the display device 980 and the user's eyes. The display device 980 has a plurality of light-emitting devices and a plurality of light-receiving devices.

[0241] The light emitted 951 from the light-emitting device of the display device 980 is shone into the eye via the optical system 950, and the light reflected by the eye is received by the light-receiving device. The display device 980 can take images of the area around the eye, the surface of the eye, or the inside of the eye (such as the fundus).

[0242] For example, the display device 980 shown in Figure 7(A) has a light-emitting device and a light-receiving device, so it can capture images of the fundus of the eye via the optical system 950 and acquire image data of the retinal pattern. However, when the focus is adjusted with the optical system 950, it becomes difficult to image other areas. For example, if the focus is set on the fundus of the eye, the area around the eye will not be in focus and therefore can hardly be imaged.

[0243] A display device according to one aspect of the present invention has a light-emitting device and a light-receiving device in each pixel. In the display device according to one aspect of the present invention, since the pixels have a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. Furthermore, since the display device according to one aspect of the present invention has sub-pixels that emit infrared light, it is also possible to display an image while emitting infrared light as a light source using the sub-pixels of the display device.

[0244] Furthermore, in one embodiment of the present invention, a display device has a display unit in which light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. In addition, light-receiving devices are arranged in a matrix on the display unit, and the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor. That is, by detecting light on the display unit, an image can be captured, or by periodically monitoring the image, the movement of an object (movement of the eyes, eyelids, or eyeballs) can be detected. Moreover, in one embodiment of the present invention, the light-emitting devices can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0245] First, using Figures 7(A) and 7(B), we will explain below how to detect the user's blinking and eyelid movements.

[0246] <Blinking and eyelid movements> The display device 980 emits near-infrared light. This near-infrared light passes through the optical system 950 and is directed at the user's eyes or the vicinity of the user's eyes. The reflected light passes through the optical system 950 again and is incident on the display device 980. This allows the state of the object to be detected.

[0247] Figure 7(B) is a schematic diagram illustrating the user's eye and its vicinity. Figure 7(B) shows the user's eyebrows 960, eyelids (upper eyelids 966 and lower eyelids 967), eyelashes 961, pupils 962, corneas 963, and sclera 965. The display device 980 has the function of capturing images of one or more of the user's eyebrows 960, eyelids (upper eyelids 966 and lower eyelids 967), eyelashes 961, pupils 962, corneas 963, and sclera 965 as shown in Figure 7(B).

[0248] For example, an electronic device according to one aspect of the present invention can use a display device 980 to detect the state of the user's eyes or the vicinity of the user's eyes as shown in Figure 7(B). For example, when the user's eyelids (upper eyelid 966 and lower eyelid 967) are closed, near-infrared light is irradiated onto the surface of the eyelids, i.e., the skin. When the eyelids are open, the near-infrared light is irradiated onto the surface of the eyeball. Since the reflectivity of the skin and the surface of the eyeball are different, the intensity of the reflected near-infrared light is different. By continuously monitoring this state, the display device 980 can be used to detect either the number of blinks or the time taken for one blink, or both.

[0249] When viewing a display for extended periods, the frequency of blinking may decrease. Furthermore, as the user becomes fatigued, the intervals between blinks may lengthen, and the duration of each individual blink may increase.

[0250] In one embodiment of the present invention, the degree of fatigue of the user can be estimated from either the number of blinks per unit time and the time taken for each blink, or both.

[0251] <Movement of the pupil> When a circular spot of infrared light is shone on the boundary region between the cornea (for example, cornea 963 shown in Figure 7(B)) and the sclera (for example, sclera 965 shown in Figure 7(B)), the ratio of the area covered by the cornea to the area covered by the sclera within the infrared light spot's illumination range changes as the eyeball moves. Since the reflectivity from the sclera is overwhelmingly greater than that from the cornea, the amount of reflected light changes as the eyeball moves. By measuring this change, it becomes possible to detect which direction the user is looking.

[0252] <Scleral reflex method> Next, we will explain the scleral reflection method. The display device 980 emits near-infrared light. This near-infrared light is irradiated into the user's eyes through the optical system 950. The light reflected by the eye passes through the optical system 950 again and enters the display device 980. This makes it possible to detect the state of the object. When viewing a displayed image, the gaze shifts when viewing fast-moving objects. When the gaze shifts, the eyeball moves. When the eyeball moves, the ratio of the area covered by the cornea and the area covered by the sclera that is irradiated with infrared light changes, making it possible to monitor the reflected light component and detect the movement of the eyeball. In other words, one embodiment of the present invention has an eye-tracking function.

[0253] Eye tracking detects the user's gaze, allowing for the estimation of the area the user is fixated on. Variable rate shading then reduces the resolution of areas outside the user's gaze, thereby reducing the computational load on the electronic device and lowering power consumption.

[0254] In one embodiment of the present invention, the electronic device has a display device 980 that includes both a light-emitting device and a sensor device, thus making it possible to reduce the number of components.

[0255] Next, we will explain the fundus diagnosis of the user's eye using Figures 7(A) and 7(C).

[0256] <Fundus diagnosis> As shown in Figure 7(A), the user's eye is composed of the lens 942, retina 941, optic nerve 943, vitreous humor 947, choroid 948, and cornea. The pupil is located between the cornea and the lens, but for simplification, the cornea and pupil are not shown. The ciliary body is a tissue that extends from the iris, and the choroid 948 is a tissue that extends from the ciliary body. The iris and pupil adjust the amount of light illuminating the retina 941, similar to the aperture of a camera. The pattern of the retina 941, the so-called retinal pattern, is said to remain essentially unchanged from birth to death, and this retinal pattern can be used for personal identification. The retinal pattern obtained by the display device 980 can be used to diagnose the eye remotely.

[0257] Furthermore, by adjusting the optical system 950, the display device 980 has the function of detecting one or more of the user's blinking, pupil movement, and eyelid movement without focusing on the fundus of the eye. In other words, an electronic device according to one aspect of the present invention has the function of detecting eye strain.

[0258] Next, Figure 7(C) shows an example of a right eye retinal pattern obtained by imaging using a display device according to one embodiment of the present invention. The retina 941 shows the optic nerve head 944, vein 945, artery 946, macula, fovea, etc. In Figure 7(C), the vein 945 is shown with a thicker solid line than the artery 946 to facilitate the distinction between the vein 945 and the artery 946. The optic nerve head 944 refers to the boundary between the optic nerve 943 and the retina 941, and the vein 945 or artery 946 is arranged to spread from the optic nerve head 944. The fundus refers to the back part of the eyeball and is a collective term for the retina 941, vitreous humor 947, choroid 948, and optic nerve head 944. In the case of the left eye, the optic nerve head 944 is located on the left side of the retinal pattern, resulting in a retinal pattern that is a left-right inversion of the right eye retinal pattern in Figure 7(C).

[0259] To acquire the retinal pattern of the fundus using the light-receiving device of the display device 980, the pupil needs to be dilated. To dilate the pupil and image the fundus, the display is changed in the following procedure: The display screen of the display device 980 is gradually dimmed to allow the user's eyes to adapt to the dark. The display screen is brightened for a short period of time of 16.7 ms or less to take an image. After that, the display screen is gradually returned to its original brightness.

[0260] Furthermore, an electronic device according to one aspect of the present invention can also detect the user's eye fatigue level using the display device 980. When the display screen is brightened and image is taken for a certain period of time, the eyes cannot be photographed if the user blinks. Therefore, by detecting the number of blinks, timing, or duration of eye closure, the degree of eye fatigue can be estimated using an AI (Artificial Intelligence) system based on the frequency of blinks, the interval between blinks, and the duration of eye closure.

[0261] Furthermore, while the display screen of the display device 980 is dimmed, multiple images may be taken to detect the user's eye fatigue level. By taking multiple images, the pulsation of retinal blood vessels can be detected, and the user's resting or tense state can be determined using an AI-based system. In addition, various data obtained from the display device 980 can be used to diagnose hypertension or diabetes using an AI-based system. When using an AI-based system, a control circuit is installed in the electronic device or the display device 980. The control circuit can be a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit). Alternatively, an APU (Accelerated Processing Unit), which is a chip integrating the CPU and GPU into one, can be used for the control circuit. Alternatively, an IC (also called an inference chip) with an AI system built in may be used. An IC with an AI system built in is sometimes called a circuit (microprocessor) that performs neural network calculations.

[0262] Also, while the display screen of the display device 980 is darkened, the orientation of the eyeball may be controlled by displaying a conspicuous pattern on the screen of the display device 980.

[0263] The distance between the display device 980 and the surface of the eye (e.g., the cornea) is preferably 5 cm or less, and more preferably 2 cm or less. To achieve this positional relationship, an optical system 950 with a short focal length is disposed between the display device 980 and the eye.

[0264] When the optical system 950 magnifies the screen by 10 times, for example, when the display screen of the display device 980 has a diagonal size of about 1 inch and a resolution (fineness) of about 2450 ppi, the pitch of the sensor pixels is about 10.4 μm. Since the respective blood vessel diameters of the retinal veins 945 or arteries 946 are smaller than about 100 μm, imaging can be performed using the display device 980.

[0265] This embodiment can be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0266] (Embodiment 3) In this embodiment, a pixel circuit configuration and a driving method applicable to a display device according to an aspect of the present invention will be described.

[0267] The pixel circuit 51A shown in FIG. 8(A) includes a transistor 52A, a transistor 52B, and a capacitor 53. In FIG. 8(A), a light-emitting device 61 connected to the pixel circuit 51A is illustrated. Further, wirings SL, GL, ANO, and VCOM are electrically connected to the pixel circuit 51A.

[0268] Transistor 52A has its gate electrically connected to wiring GL, one of its source and drain electrically connected to wiring SL, and the other electrically connected to the gate of transistor 52B and one of the electrodes of capacitor 53 respectively. One of the source and drain of transistor 52B is electrically connected to wiring ANO, and the other is electrically connected to the anode of light-emitting device 61 respectively. For capacitor 53, the other electrode is electrically connected to the anode of light-emitting device 61. The cathode of light-emitting device 61 is electrically connected to wiring VCOM.

[0269] Transistor 52A can also be called a selection transistor and functions as a switch for controlling the selection and non-selection of pixels. Transistor 52B can also be called a driving transistor and has the function of controlling the current flowing through light-emitting device 61. Capacitor 53 functions as a holding capacitor and has the function of holding the gate potential of transistor 52B. Capacitor 53 may apply a capacitive element such as a MIM capacitor, or may be a capacitance between wirings, or a gate capacitance of a transistor, etc.

[0270] A source signal is supplied to wiring SL. A gate signal is supplied to wiring GL. Constant potentials are supplied to wiring ANO and wiring VCOM respectively. The anode side of light-emitting device 61 can be set to a high potential, and the cathode side can be set to a lower potential than the anode side.

[0271] The pixel circuit 51B shown in FIG. 8(B) has a configuration in which transistor 52C is added to pixel circuit 51A. Also, wiring V0 is electrically connected to pixel circuit 51B.

[0272] For transistor 52C, its gate is electrically connected to wiring GL, one of its source and drain is electrically connected to the anode of light-emitting device 61, and the other is electrically connected to wiring V0 respectively.

[0273] When writing data to pixel circuit 51B, a constant potential is applied to wiring V0. Thereby, the variation in the gate-source voltage of transistor 52B can be suppressed.

[0274] The pixel circuit 51C shown in Figure 8(C) is an example in which transistors 52A and 52B of the pixel circuit 51A are replaced with transistors in which a pair of gates are electrically connected. Similarly, the pixel circuit 51D shown in Figure 8(D) is an example in which the same transistor is replaced with the pixel circuit 51B. This increases the current that the transistors can supply. While transistors with a pair of gates electrically connected are used here, this is not the only option. Furthermore, transistors with a pair of gates that are electrically connected to different wirings may also be used. For example, reliability can be improved by using a transistor in which one of the gates and the source are electrically connected.

[0275] The pixel circuit 51E shown in Figure 9(A) is configured by adding a transistor 52D to the above 51B. Furthermore, the pixel circuit 51E is electrically connected to three wires that function as gate lines (wires GL1, GL2, and GL3).

[0276] Transistor 52D has its gate electrically connected to wiring GL3, and one of its source and drain is electrically connected to the gate of transistor 52B, while the other is electrically connected to wiring V0. Also, the gate of transistor 52A is electrically connected to wiring GL1, and the gate of transistor 52C is electrically connected to wiring GL2.

[0277] By simultaneously making transistors 52C and 52D conduct, the source and gate of transistor 52B become at the same potential, making transistor 52B non-conducting. This allows the current flowing to the light-emitting device 61 to be forcibly interrupted. Such a pixel circuit is suitable for display methods that alternate between display periods and off periods.

[0278] The pixel circuit 51F shown in Figure 9(B) is an example in which a capacitor 53A is added to the above pixel circuit 51E. The capacitor 53A functions as a retaining capacitor.

[0279] The pixel circuit 51G shown in Figure 9(C) and the pixel circuit 51H shown in Figure 9(D) are examples of applying a transistor having a pair of gates to the above-mentioned pixel circuit 51E or pixel circuit 51F, respectively. Transistors 52A, 52C, and 52D are transistors in which a pair of gates are electrically connected, while transistor 52B is a transistor in which one of its gates is electrically connected to the source.

[0280] Next, an example of a driving method for a display device to which the pixel circuit 51E is applied will be described. Note that the same driving method can be applied to the pixel circuits 51F, 51G, and 51H.

[0281] Figure 10 shows a timing chart for the driving method of a display device to which the pixel circuit 51E is applied. Here, the potential changes of the gate lines of the k-th row, wiring GL1[k], wiring GL2[k], and wiring GL3[k], and the gate lines of the k+1-th row, wiring GL1[k+1], wiring GL2[k+1], and wiring GL3[k+1] are shown. Figure 10 also shows the timing of the signal applied to wiring SL, which functions as a source line.

[0282] This example shows a driving method that divides one horizontal period into an on-time period and an off-time period. Also, the horizontal period in row k and the horizontal period in row k+1 are shifted by the gate line selection period.

[0283] During the k-th row's illumination period, a high-level potential is first applied to wires GL1[k] and GL2[k], and a source signal is applied to wire SL. This causes transistors 52A and 52C to conduct, and the potential corresponding to the source signal is written from wire SL to the gate of transistor 52B. Subsequently, a low-level potential is applied to wires GL1[k] and GL2[k], causing transistors 52A and 52C to become non-conductive, and the gate potential of transistor 52B is maintained.

[0284] Next, the process transitions to the illumination period of the (k+1)th row, and data is written using the same procedure as described above.

[0285] Next, we will explain the off-period. During the off-period of the k-th row, a high-level potential is applied to wiring GL2[k] and wiring GL3[k]. As a result, transistors 52C and 52D become conductive, and the same potential is supplied to the source and gate of transistor 52B, so almost no current flows through transistor 52B. As a result, the light-emitting device 61 turns off. All subpixels located in the k-th row turn off. The subpixels in the k-th row remain off until the next on-period.

[0286] Next, the process transitions to the blackout period for row k+1, and as described above, all subpixels in row k+1 become black.

[0287] Thus, a driving method that includes periods of the light being off during a horizontal display period, rather than remaining lit the entire time, can also be called duty cycle driving. By using duty cycle driving, the afterimage phenomenon when displaying videos can be reduced, thus enabling the creation of display devices with high video display performance. In particular, in VR devices, reducing afterimages can alleviate so-called VR sickness.

[0288] In duty cycle operation, the ratio of the lighting period to the horizontal period can be called the duty cycle. For example, a duty cycle of 50% means that the lighting period and the off period are of equal length. The duty cycle can be freely set and can be adjusted as appropriate within a range of, for example, higher than 0% and less than or equal to 100%.

[0289] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0290] (Embodiment 4) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 11 to 20.

[0291] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used, for example, in information terminal devices (wearable devices) such as wristwatch types and bracelet types, as well as in display units of wearable devices that can be worn on the head, such as VR devices like head-mounted displays and AR devices of glasses types.

[0292] The display device of this embodiment has a light-receiving device in the pixel. Therefore, it is possible to use the light-receiving device to capture an image of the user of the wearable device around the eyes, on the surface of the eyes, or inside the eyes (such as the fundus). Therefore, the wearable device can be equipped with a function of detecting any one or more selected from the user's blinking, movement of the black eyes, and movement of the eyelids.

[0293] Also, the display device of this embodiment can be a high-resolution display device or a large display device. Therefore, the display device of this embodiment can be used, for example, in electronic devices with relatively large screens such as television devices, desktop or notebook personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, and audio playback devices.

[0294] The display device of this embodiment has a light-receiving device in the pixel. Therefore, it is possible to use the light-receiving device to acquire data related to biometric information such as fingerprints and palm prints of the user of the electronic device. That is, a biometric authentication sensor can be built into the display device. By incorporating a biometric authentication sensor in the display device, the number of components of the electronic device can be reduced compared to the case where a biometric authentication sensor is provided separately from the display device, and the electronic device can be miniaturized and lightweight.

[0295] Also, the light-receiving device may be used as a touch sensor or a non-contact sensor, etc.

[0296] Here, a touch sensor or a non-contact sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the electronic device and the object are in direct contact. A non-contact sensor can detect an object even if the object does not come into contact with the electronic device. For example, it is preferable that the display device (or electronic device) can detect an object when the distance between the display device (or electronic device) and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the electronic device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the electronic device becoming dirty or scratched can be reduced, or it becomes possible to operate the electronic device without the object directly touching any dirt (e.g., dust or viruses) attached to the electronic device.

[0297] Furthermore, non-contact sensor functions can also be referred to as hover sensor functions, hover-touch sensor functions, near-touch sensor functions, touchless sensor functions, etc. Similarly, touch sensor functions can also be referred to as direct-touch sensor functions, etc.

[0298] [Display Module] Figure 11(A) shows a perspective view of the display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to display device 100A, but may be any of the display devices 100B to 100F described later.

[0299] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0300] Figure 11(B) shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286 composed of multiple wires.

[0301] The pixel section 284 has multiple pixels 284a arranged periodically. A magnified view of one pixel 284a is shown on the right side of Figure 11(B). The pixel 284a has five elements (devices): a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, a light-emitting device 130B that emits blue light, a light-emitting device 130IR that emits infrared light, and a light-receiving device 150 that detects infrared light.

[0302] Furthermore, pixel 284a is composed of five subpixels. Thus, achieving a high aperture ratio in pixels with many subpixels is extremely difficult. Alternatively, it is difficult to realize a high-resolution display device using pixels with many subpixels. Therefore, in a method for manufacturing a display device according to one aspect of the present invention, the island-shaped EL layer is formed not using a metal mask with a fine pattern, but by processing after depositing the EL layer onto one surface. This makes it possible to realize a high-resolution display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be manufactured separately for each color, a display device with extremely vivid colors, high contrast, and high display quality can be realized. In addition, a high-resolution display device or a display device with a high aperture ratio that incorporates a light-receiving device and has a light detection function can be realized.

[0303] In the pixels of the display device of this embodiment, each sub-pixel having a light-emitting device or a light-receiving device can be configured to have a light-emitting region or a light-receiving region with sides of 1 μm or more and 10 μm or less. Furthermore, the pixels can be configured so that the distance between two adjacent sub-pixels is 3 μm or less, and even less than 1 μm.

[0304] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0305] A single pixel circuit 283a is a circuit that controls the driving of multiple elements in a single pixel 284a. A single pixel circuit 283a may be configured to have five circuits for controlling the driving of elements. For example, a pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active-matrix type display device.

[0306] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0307] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0308] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are superimposed on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 281. For example, it is preferable that the pixels 284a in the display section 281 are arranged with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and with a resolution of 20000 ppi or less, or 30000 ppi or less.

[0309] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as wristwatches.

[0310] [Display device 100A] The display device 100A shown in Figure 12(A) comprises a substrate 301, light-emitting devices 130R and 130IR, a light-receiving device 150, a capacitor 240, and a transistor 310.

[0311] Substrate 301 corresponds to substrate 291 in Figures 11(A) and 11(B). The laminated structure from substrate 301 to insulating layer 255b corresponds to layer 101 containing the transistor in Embodiment 1.

[0312] The transistor 310 is a transistor having a channel-forming region in the substrate 301. The substrate 301 can be a semiconductor substrate such as a single-crystal silicon substrate. The transistor 310 comprises a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as either a source or a drain. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0313] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0314] Furthermore, an insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0315] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 acts as one electrode of the capacitor 240, the conductive layer 245 acts as the other electrode of the capacitor 240, and the insulating layer 243 acts as the dielectric of the capacitor 240.

[0316] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243.

[0317] An insulating layer 255a is provided covering the capacitance 240, and an insulating layer 255b is provided on top of the insulating layer 255a.

[0318] Various inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride-oxide insulating films can be suitably used as insulating layers 255a and 255b, respectively. For insulating layer 255a, it is preferable to use an oxide insulating film or oxidative nitride insulating film such as a silicon oxide film, silicon oxidative nitride film, or aluminum oxide film. For insulating layer 255b, it is preferable to use a nitride insulating film or oxidative nitride insulating film such as a silicon nitride film or silicon nitride-oxide film. More specifically, it is preferable to use a silicon oxide film as insulating layer 255a and a silicon nitride film as insulating layer 255b. It is preferable that insulating layer 255b functions as an etching protective film. Alternatively, a nitride insulating film or nitride-oxide insulating film may be used as insulating layer 255a, and an oxide insulating film or oxidative nitride insulating film may be used as insulating layer 255b. In this embodiment, an example is shown in which a recess is provided in insulating layer 255b, but the insulating layer 255b does not necessarily have to have a recess.

[0319] Light-emitting devices 130R, 130IR, and 150 are provided on the insulating layer 255b. Figure 12(A) shows an example in which the light-emitting devices 130R, 130IR, and 150 have a structure similar to the laminated structure shown in Figure 1(B). Insulators are provided in the regions between adjacent light-emitting devices and between adjacent light-emitting devices and 150. In Figure 12(A) and other figures, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in these regions.

[0320] As shown in Figure 11(B), the display device 100A has five elements (devices) in each pixel, and Figure 12(A) shows three of these elements (devices). The light-emitting devices 130G and 130B, which are not shown in Figure 12(A), are also provided on the insulating layer 255b. The configuration of the five elements is the same as in Figure 1(B), so a detailed explanation is omitted.

[0321] The pixel electrodes of the light-emitting and light-receiving devices are electrically connected to either the source or drain of the transistor 310 by plugs 256 embedded in insulating layers 255a and 255b, a conductive layer 241 embedded in insulating layer 254, and a plug 271 embedded in insulating layer 261. The height of the upper surface of insulating layer 255b and the height of the upper surface of plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0322] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130IR, and the light-receiving device 150. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting devices to the substrate 120 can be found in Embodiment 1. The substrate 120 corresponds to the substrate 292 in Figure 11(A).

[0323] The upper edges of the conductive layers 111a, 111c, and 111e are not covered by the insulating layer. Therefore, the spacing between adjacent light-emitting devices, and between light-emitting devices and light-receiving devices, can be made extremely narrow. Consequently, a high-definition or high-resolution display device can be made.

[0324] Figure 1(B), etc., shows examples in which the light-emitting devices 130R, 130G, and 130B each have different configurations for the first layer 113a, the second layer 113b, and the fourth layer 113d. However, the EL layers of the light-emitting devices 130R, 130G, and 130B may have the same configuration.

[0325] Figures 12(B) and 12(C) show examples in which light-emitting devices 130R, 130G, and 130B have the same configuration. The light-emitting devices 130R, 130G, and 130B shown in Figures 12(B) and 12(C) all have a first layer 113a and a sixth layer 114 between the pixel electrode and the common electrode 115. For example, the light-emitting devices 130R, 130G, and 130B can be configured to emit white light.

[0326] Figure 12(B) shows an example in which colored layers 132R, 132G, and 132B are provided on the protective layer 131. The substrate 120 is bonded to the colored layers 132R, 132G, and 132B by a resin layer 122.

[0327] Figure 12(C) shows an example in which a substrate 120, provided with colored layers 132R, 132G, and 132B, is bonded to a protective layer 131 by a resin layer 122.

[0328] In Figures 12(B) and 12(C), the light-emitting device 130R is superimposed on a red colored layer 132R, and the light emitted from the light-emitting device 130R is extracted as red light to the outside of the display device via the colored layer 132R. Similarly, the light-emitting device 130G is superimposed on a green colored layer 132G, and the light emitted from the light-emitting device 130G is extracted as green light to the outside of the display device via the colored layer 132G. The light-emitting device 130B is superimposed on a blue colored layer 132B, and the light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display device via the colored layer 132B.

[0329] [Display device 100B] The display device 100B shown in Figure 13 has a configuration in which transistors 310A and 310B, each with a channel formed on a semiconductor substrate, are stacked. In the following description of the display device, parts that are the same as those described earlier may be omitted.

[0330] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, a light-emitting device, and a light-receiving device are provided, and a substrate 301A on which a transistor 310A is provided are bonded together.

[0331] Here, it is preferable to provide an insulating layer 345 on the lower surface of substrate 301B. It is also preferable to provide an insulating layer 346 on top of the insulating layer 261 provided on substrate 301A. Insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into substrates 301B and 301A. As insulating layers 345 and 346, inorganic insulating films that can be used for protective layer 131 or insulating layer 332 can be used.

[0332] A plug 343 is provided on the substrate 301B, penetrating both the substrate 301B and the insulating layer 345. It is preferable to provide an insulating layer 344 covering the sides of the plug 343. The insulating layer 344 functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. An inorganic insulating film, usable for the protective layer 131, can be used as the insulating layer 344.

[0333] Furthermore, a conductive layer 342 is provided on the back side of the substrate 301B (the side opposite to the substrate 120 side), beneath the insulating layer 345. Preferably, the conductive layer 342 is provided so as to be embedded in the insulating layer 335. Also, preferably, the undersides of the conductive layer 342 and the insulating layer 335 are flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0334] On the other hand, the substrate 301A has a conductive layer 341 provided on an insulating layer 346. Preferably, the conductive layer 341 is provided so as to be embedded in the insulating layer 336. Furthermore, it is preferable that the upper surfaces of the conductive layer 341 and the insulating layer 336 are flattened.

[0335] The conductive layer 341 and the conductive layer 342 are bonded together, thereby electrically connecting the substrate 301A and the substrate 301B. By improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335, and the surface formed by the conductive layer 341 and the insulating layer 336, the bonding of the conductive layer 341 and the conductive layer 342 can be improved.

[0336] It is preferable to use the same conductive material for conductive layer 341 and conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) composed of the above elements can be used. In particular, it is preferable to use copper for conductive layer 341 and conductive layer 342. This makes it possible to apply Cu-Cu (copper-copper) direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other).

[0337] [Display device 100C] The display device 100C shown in Figure 14 has a configuration in which conductive layer 341 and conductive layer 342 are joined via bumps 347.

[0338] As shown in Figure 14, the conductive layer 341 and the conductive layer 342 can be electrically connected by providing a bump 347 between them. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), or tin (Sn). Solder may also be used as the bump 347. An adhesive layer 348 may also be provided between the insulating layer 345 and the insulating layer 346. Furthermore, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may be omitted.

[0339] [Display device 100D] The display device 100D shown in Figure 15 differs from the display device 100A mainly in its transistor configuration.

[0340] Transistor 320 is an OS transistor in which a metal oxide (also called an oxide semiconductor) is applied to the semiconductor layer where the channel is formed.

[0341] The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0342] Substrate 331 corresponds to substrate 291 in Figures 11(A) and 11(B). The laminated structure from substrate 331 to insulating layer 255b corresponds to layer 101 containing the transistor in Embodiment 1. An insulating substrate or a semiconductor substrate can be used as substrate 331.

[0343] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320, and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332. As the insulating layer 332, for example, a film that is less susceptible to hydrogen or oxygen diffusion than a silicon oxide film can be used, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0344] A conductive layer 327 is provided on an insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. It is preferable that the upper surface of the insulating layer 326 is flattened.

[0345] The semiconductor layer 321 is provided on the insulating layer 326. Preferably, the semiconductor layer 321 has a metal oxide (also called an oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as a source electrode and a drain electrode.

[0346] An insulating layer 328 is provided covering the top and side surfaces of a pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264, etc., and to prevent oxygen from detaching from the semiconductor layer 321. An insulating film similar to that used for the insulating layer 332 can be used for the insulating layer 328.

[0347] An opening is provided in the insulating layer 328 and the insulating layer 264 that reaches the semiconductor layer 321. Inside this opening, the insulating layer 323 and the conductive layer 324 are embedded, in contact with the sides of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0348] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are flattened so that their heights are the same or approximately the same, and the insulating layer 329 and insulating layer 265 are provided covering them.

[0349] Insulating layers 264 and 265 function as interlayer insulating layers. Insulating layer 329 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the transistor 320 from insulating layer 265, etc. As insulating layer 329, an insulating film similar to that used for insulating layers 328 and 332 can be used.

[0350] A plug 274, which is electrically connected to one of the pair of conductive layers 325, is provided so as to be embedded in the insulating layers 265, 329, and 264. Here, it is preferable that the plug 274 has a conductive layer 274a that covers the sides of the openings of the insulating layers 265, 329, 264, and 328, and a part of the upper surface of the conductive layer 325, and a conductive layer 274b that is in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 274a.

[0351] [Display device 100E] The display device 100E shown in Figure 16 has a configuration in which transistors 320A and 320B, each having an oxide semiconductor in the semiconductor where the channel is formed, are stacked.

[0352] The configuration of transistors 320A and 320B, and their surrounding components, can be based on the display device 100D described above.

[0353] In this example, we have used a configuration in which two transistors having oxide semiconductors are stacked, but this is not the only option. For example, a configuration in which three or more transistors are stacked may also be used.

[0354] [Display device 100F] The display device 100F shown in Figure 17 has a configuration in which a transistor 310 with a channel formed on a substrate 301 and a transistor 320 containing a metal oxide in the semiconductor layer where the channel is formed are stacked.

[0355] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. An insulating layer 262 is provided covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layers 251 and 252 each function as wiring. An insulating layer 263 and an insulating layer 332 are provided covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. An insulating layer 265 is provided covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0356] Transistor 320 can be used as a transistor constituting a pixel circuit. Transistor 310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0357] This configuration allows for the formation of not only pixel circuits but also drive circuits directly beneath the light-emitting device, making it possible to miniaturize the display device compared to cases where the drive circuits are located around the display area.

[0358] [Display device 100G] Figure 18 shows a perspective view of the display device 100G, and Figure 19(A) shows a cross-sectional view of the display device 100G.

[0359] The display device 100G has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 18, substrate 152 is clearly indicated by a dashed line.

[0360] The display device 100G includes a display unit 162, a connection unit 140, a circuit 164, wiring 165, etc. Figure 18 shows an example in which IC 173 and FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Figure 18 can also be described as a display module having the display device 100G, an IC (integrated circuit), and an FPC.

[0361] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one or more sides of the display portion 162. There may be one or more connection portions 140. Figure 18 shows an example in which the connection portion 140 is provided so as to surround all four sides of the display portion. At the connection portion 140, the common electrode of the light-emitting device and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.

[0362] For example, a scan line drive circuit can be used as circuit 164.

[0363] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0364] Figure 18 shows an example in which IC 173 is provided on the substrate 151 using a COG (Chip On Glass) method or COF (Chip On Film) method. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100G and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method or the like.

[0365] Figure 19(A) shows an example of a cross-section of the display device 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection unit 140, and a portion of the area including the end are cut.

[0366] The display device 100G shown in Figure 19(A) has a transistor 201, a transistor 205, a light receiving device 150, a light-emitting device 130G that emits green light, and a light-emitting device 130IR that emits infrared light, etc., between substrates 151 and 152.

[0367] The display device 100G can, for example, adopt the pixel layout shown in Figure 1(A), as described in Embodiment 1. Figure 19(A) shows three of these elements (devices). The light-emitting devices 130R and 130B, which are not shown in Figure 19(A), are also provided on the insulating layer 214. The parts of the configuration of the five elements that are the same as those in Figure 1(B) will not be explained.

[0368] The light-receiving device 150 has a conductive layer 111e, a conductive layer 112e on the conductive layer 111e, and a conductive layer 126e on the conductive layer 112e. All of the conductive layers 111e, 112e, and 126e can be called pixel electrodes, or only a part of them can be called pixel electrodes.

[0369] The conductive layer 111e is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The edge of the conductive layer 112e is located outside the edge of the conductive layer 111e. The edges of the conductive layer 112e and the conductive layer 126e are aligned or approximately aligned. For example, conductive layers that function as reflective electrodes can be used for conductive layers 111e and 112e, and a conductive layer that functions as a transparent electrode can be used for conductive layer 126e.

[0370] The light-emitting device 130G has a conductive layer 111b, a conductive layer 112b on the conductive layer 111b, and a conductive layer 126b on the conductive layer 112b.

[0371] The light-emitting device 130IR has a conductive layer 111c, a conductive layer 112c on the conductive layer 111c, and a conductive layer 126c on the conductive layer 112c.

[0372] The conductive layers 111b, 112b, and 126b in the light-emitting device 130G, and the conductive layers 111c, 112c, and 126c in the light-emitting device 130IR are the same as the conductive layers 111e, 112e, and 126e in the light-receiving device 150, so a detailed explanation is omitted.

[0373] The conductive layers 111b, 111c, and 111e are provided so as to cover the openings provided in the insulating layer 214. Layer 128 is embedded in the recesses of each of the conductive layers 111b, 111c, and 111e.

[0374] Layer 128 has the function of flattening the recesses of the conductive layers 111b, 111c, and 111e. Conductive layers 112b, 112c, and 112e are provided on conductive layers 111b, 111c, and 111e and on layer 128, and are electrically connected to conductive layers 111b, 111c, and 111e. Therefore, regions overlapping with the recesses of conductive layers 111b, 111c, and 111e can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixels.

[0375] Layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 128 as appropriate. In particular, it is preferable that layer 128 be formed using an insulating material.

[0376] As layer 128, an insulating layer having an organic material can be suitably used. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as layer 128. Alternatively, a photosensitive resin can be used as layer 128. The photosensitive resin can be a positive-type material or a negative-type material.

[0377] By using a photosensitive resin, layer 128 can be fabricated using only exposure and development processes, reducing the impact on the surfaces of conductive layers 111b, 111c, and 111e due to dry etching or wet etching. Furthermore, by forming layer 128 using a negative-type photosensitive resin, it may be possible to form layer 128 using the same photomask (exposure mask) used to form the openings of the insulating layer 214.

[0378] The top and side surfaces of conductive layer 112e and conductive layer 126e are covered by a fifth layer 113e. The fifth layer 113e has at least an active layer.

[0379] Similarly, the top and side surfaces of conductive layer 112b and conductive layer 126b are covered by the second layer 113b. Furthermore, the top and side surfaces of conductive layer 112c and conductive layer 126c are covered by the third layer 113c. Therefore, the entire region where conductive layers 112b and 112c are provided can be used as the light-emitting region of the light-emitting devices 130G and 130IR, thereby increasing the aperture ratio of the pixels.

[0380] The sides of the second layer 113b, the third layer 113c, and the fifth layer 113e are covered by insulating layers 125 and 127, respectively. A sacrificial layer 118b is located between the second layer 113b and the insulating layer 125. A sacrificial layer 118c is located between the third layer 113c and the insulating layer 125, and a sacrificial layer 118e is located between the fifth layer 113e and the insulating layer 125. A sixth layer 114 is provided on the second layer 113b, the third layer 113c, the fifth layer 113e, and the insulating layers 125 and 127, and a common electrode 115 is provided on the sixth layer 114. The sixth layer 114 and the common electrode 115 are continuous films provided in common to the light-receiving device and the light-emitting device, respectively. Furthermore, a protective layer 131 is provided on the light-emitting devices 130G and 130IR and on the light-receiving device 150.

[0381] The protective layer 131 and the substrate 152 are bonded together via an adhesive layer 142. For sealing the light-emitting device, a solid sealing structure or a hollow sealing structure can be applied. In Figure 19(A), the space between the substrate 152 and the substrate 151 is filled with the adhesive layer 142, demonstrating a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), demonstrating a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Furthermore, the space may be filled with a resin different from the adhesive layer 142, which is provided in a frame shape.

[0382] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 111b, 111c, and 111e, a conductive film obtained by processing the same conductive film as conductive layers 112b, 112c, and 112e, and a conductive film obtained by processing the same conductive film as conductive layers 126b, 126c, and 126e. The ends of the conductive layer 123 are covered by a sacrificial layer, an insulating layer 125, and an insulating layer 127. A sixth layer 114 is provided on the conductive layer 123, and a common electrode 115 is provided on the sixth layer 114. The conductive layer 123 and the common electrode 115 are electrically connected via the sixth layer 114. Note that the sixth layer 114 does not necessarily have to be formed in the connection portion 140. In this case, the conductive layer 123 and the common electrode 115 are in direct contact and electrically connected.

[0383] The display device 100G is a top-emission type. The light emitted by the light-emitting device is emitted towards the substrate 152. It is preferable to use a material with high transmittance to visible light and infrared light for the substrate 152. The pixel electrodes contain a material that reflects visible light and infrared light, and the counter electrodes (common electrodes 115) contain a material that transmits visible light and infrared light.

[0384] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor in Embodiment 1.

[0385] Both transistors 201 and 205 are formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0386] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0387] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0388] It is preferable to use inorganic insulating films for insulating layer 211, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxide nitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0389] An organic insulating film is preferred for the insulating layer 214, which functions as a planarization layer. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating film and an inorganic insulating film. The outermost layer of the insulating layer 214 preferably functions as an etching protective film. This makes it possible to suppress the formation of depressions in the insulating layer 214 during processing of conductive layers 111b, 112b, or 126b. Alternatively, depressions may be provided in the insulating layer 214 during processing of conductive layers 111b, 112b, or 126b.

[0390] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0391] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0392] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0393] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0394] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0395] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0396] OS transistors have extremely high field-effect mobility compared to amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (hereinafter also referred to as off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of display devices.

[0397] Furthermore, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0398] The metal oxide used in the semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0399] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also written as IAGZO).

[0400] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Possible atomic ratios of metal elements in such an In-M-Zn oxide include: In:M:Zn=1:1:1 or near that composition, In:M:Zn=1:1:1.2 or near that composition, In:M:Zn=1:3:2 or near that composition, In:M:Zn=1:3:4 or near that composition, In:M:Zn=2:1:3 or near that composition, In:M:Zn=3:1:2 or near that composition, and In:M:Zn=4:2:3 Examples include compositions near the desired atomic ratio, such as In:M:Zn=4:2:4.1 or near that ratio, In:M:Zn=5:1:3 or near that ratio, In:M:Zn=5:1:6 or near that ratio, In:M:Zn=5:1:7 or near that ratio, In:M:Zn=5:1:8 or near that ratio, In:M:Zn=6:1:6 or near that ratio, In:M:Zn=5:2:5 or near that ratio, etc. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0401] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when In is set to 5, Ga is greater than 0.1 and 2 or less, and Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when In is set to 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0402] Alternatively, a transistor using silicon as the channel-forming region (Si transistor) may be used. Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0403] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits implemented in the display device, reducing component and mounting costs.

[0404] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0405] All of the transistors in the display unit 162 may be OS transistors, all of the transistors in the display unit 162 may be Si transistors, or some of the transistors in the display unit 162 may be OS transistors and the rest may be Si transistors.

[0406] For example, by using both LTPS transistors and OS transistors in the display unit 162, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. In a more preferable example, it is preferable to apply OS transistors to transistors that function as switches for controlling conduction and non-conduction between wiring, and LTPS transistors to transistors that control current.

[0407] For example, one of the transistors in the display unit 162 functions as a transistor for controlling the current flowing to the light-emitting device, and can also be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.

[0408] On the other hand, the other transistor in the display unit 162 functions as a switch for controlling the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0409] Thus, a display device according to one aspect of the present invention can combine a high aperture ratio, high resolution, high display quality, and low power consumption.

[0410] Furthermore, one embodiment of the present invention is a display device having an OS transistor and a light-emitting device with an MML (metal maskless) structure. This configuration makes it possible to extremely reduce the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current or side leakage current). With this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, and a high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting devices, it is possible to achieve a display with virtually no light leakage that may occur when displaying black (also called a true black display).

[0411] Figures 19(B) and 19(C) show other examples of transistor configurations.

[0412] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0413] In the transistor 209 shown in Figure 19(B), an example is shown in which the insulating layer 225 covers the top and side surfaces of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0414] On the other hand, in the transistor 210 shown in Figure 19(C), the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 19(C) can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 19(C), an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0415] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The conductive layer 166 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 111b, 111c, and 111d, a conductive film obtained by processing the same conductive film as conductive layers 112b, 112c, and 112d, and a conductive film obtained by processing the same conductive film as conductive layers 126b, 126c, and 126d. On the upper surface of the connection portion 204, the conductive layer 166 is exposed. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0416] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting devices, at connection points 140, and in circuits 164, etc. In addition, various optical components can be arranged on the outside of the substrate 152.

[0417] By providing a protective layer 131 that covers the light-emitting device and the light-receiving device, it is possible to suppress the ingress of impurities such as water into the light-emitting device and the light-receiving device, thereby improving the reliability of the light-emitting device and the light-receiving device.

[0418] Materials that can be used for substrate 120 can be applied to substrate 151 and substrate 152, respectively.

[0419] As the adhesive layer 142, a material that can be used for the resin layer 122 can be applied.

[0420] As the connecting layer 242, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0421] [Display device 100H] The display device 100H shown in Figure 20(A) differs from the display device 100G mainly in that it is a bottom-emission type display device that combines a white light-emitting device with a color filter.

[0422] The light emitted by the light-emitting device is projected onto the substrate 151. Light enters the light-receiving device from the substrate 151 side. It is preferable to use a material with high transmittance to visible light for the substrate 151. On the other hand, the light transmittance of the material used for the substrate 152 is not a requirement.

[0423] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 201, and between the substrate 151 and the transistor 205. Figure 20(A) shows an example in which a light-shielding layer 117 is provided on the substrate 151, an insulating layer 153 is provided on the light-shielding layer 117, and transistors 201, 205, etc. are provided on the insulating layer 153.

[0424] The light-emitting device 130B and the blue colored layer 132B are superimposed, and the light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display device 100H via the colored layer 132B.

[0425] The light-emitting device 130B includes a conductive layer 111d, a conductive layer 112d on the conductive layer 111d, and a conductive layer 126d on the conductive layer 112d.

[0426] The light-receiving device 150 includes a conductive layer 111e, a conductive layer 112e on the conductive layer 111e, and a conductive layer 126e on the conductive layer 112e.

[0427] The conductive layers 111d, 111e, 112d, 112e, 126d, and 126e are made of materials with high transmittance to visible light. It is preferable to use a material that reflects visible light for the common electrode 115.

[0428] The top and side surfaces of conductive layer 112d and conductive layer 126d are covered by a fourth layer 113d. The side surfaces of the fourth layer 113d are covered by insulating layers 125 and 127. A sacrificial layer 118d is located between the fourth layer 113d and the insulating layer 125. A sixth layer 114 is provided on the fourth layer 113d, the fifth layer 113e, and the insulating layers 125 and 127, and a common electrode 115 is provided on the sixth layer 114. The sixth layer 114 and the common electrode 115 are continuous films provided in common on the light-receiving device and the light-emitting device, respectively. In addition, a protective layer 131 is provided on the light-emitting device 130G and the light-receiving device 150.

[0429] The light-emitting devices, each having subpixels that emit red, green, and blue light respectively, can all be configured to emit white light. For example, a stacked structure of a first light-emitting unit, a charge generation layer, and a second light-emitting unit can be applied to the fourth layer 113d.

[0430] Furthermore, while Figures 19(A) and 20(A) show examples where the upper surface of layer 128 has a flat portion, the shape of layer 128 is not particularly limited. Figures 20(B) to 20(D) show modified examples of layer 128.

[0431] As shown in Figures 20(B) and 20(D), the upper surface of layer 128 can be configured to have a shape in which the center and its vicinity are recessed in a cross-sectional view, that is, a shape having a concave curved surface.

[0432] Furthermore, as shown in Figure 20(C), the upper surface of layer 128 can be configured to have a shape that bulges in the center and its vicinity in a cross-sectional view, that is, a shape with a convex curved surface.

[0433] Furthermore, the upper surface of layer 128 may have one or both of a convex and a concave surface. Also, the number of convex and concave surfaces on the upper surface of layer 128 is not limited and can be one or more.

[0434] Furthermore, the height of the top surface of layer 128 and the height of the top surface of the conductive layer 111e may be the same or approximately the same, or they may be different from each other. For example, the height of the top surface of layer 128 may be lower or higher than the height of the top surface of the conductive layer 111e.

[0435] Furthermore, Figure 20(B) can be seen as an example in which layer 128 is housed inside a recess in the conductive layer 111e. On the other hand, as shown in Figure 20(D), layer 128 may exist outside the recess in the conductive layer 111e, that is, the width of the upper surface of layer 128 may be wider than that of the recess.

[0436] This embodiment can be combined with other embodiments as appropriate.

[0437] (Embodiment 5) This embodiment describes a light-emitting device that can be used in a display device according to one aspect of the present invention.

[0438] As shown in Figure 21(A), the light-emitting device has an EL layer 786 between a pair of electrodes (lower electrode 772, upper electrode 788). The EL layer 786 can be composed of multiple layers, such as layer 4420, light-emitting layer 4411, and layer 4430. Layer 4420 may include, for example, a layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer). Light-emitting layer 4411 may include, for example, a light-emitting compound. Layer 4430 may include, for example, a layer containing a material with high hole injection properties (hole injection layer) and a layer containing a material with high hole transport properties (hole transport layer).

[0439] A configuration having a layer 4420, an emissive layer 4411, and a layer 4430 provided between a pair of electrodes can function as a single emissive unit, and in this specification, the configuration shown in Figure 21(A) is referred to as a single structure.

[0440] Furthermore, Figure 21(B) shows a modified example of the EL layer 786 of the light-emitting device shown in Figure 21(A). Specifically, the light-emitting device shown in Figure 21(B) has a layer 4431 on the lower electrode 772, a layer 4432 on the layer 4431, a light-emitting layer 4411 on the layer 4432, a layer 4421 on the light-emitting layer 4411, a layer 4422 on the layer 4421, and an upper electrode 788 on the layer 4422. For example, when the lower electrode 772 is the anode and the upper electrode 788 is the cathode, layer 4431 functions as a hole injection layer, layer 4432 functions as a hole transport layer, layer 4421 functions as an electron transport layer, and layer 4422 functions as an electron injection layer. Alternatively, if the lower electrode 772 is used as the cathode and the upper electrode 788 as the anode, layer 4431 functions as an electron injection layer, layer 4432 functions as an electron transport layer, layer 4421 functions as a hole transport layer, and layer 4422 functions as a hole injection layer. With such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 4411 and increase the efficiency of carrier recombination within the light-emitting layer 4411.

[0441] Furthermore, as shown in Figures 21(C) and 21(D), a configuration in which multiple light-emitting layers (light-emitting layers 4411, 4412, and 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0442] Furthermore, as shown in Figures 21(E) and 21(F), a configuration in which multiple light-emitting units (EL layer 786a, EL layer 786b) are connected in series via a charge generation layer 4440 is referred to as a tandem structure in this specification. The tandem structure may also be called a stacked structure. By using a tandem structure, a light-emitting device capable of high-brightness emission can be achieved.

[0443] In Figures 21(C) and 21(D), the light-emitting layers 4411, 4412, and 4413 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. For example, light-emitting materials that emit blue light may be used for the light-emitting layers 4411, 4412, and 4413. A color conversion layer may be provided as layer 785 as shown in Figure 21(D).

[0444] Furthermore, light-emitting materials that emit light of different colors may be used for light-emitting layers 4411, 4412, and 4413. When the light emitted by light-emitting layers 4411, 4412, and 4413 are complementary colors, white light emission is obtained. A color filter (also called a colored layer) may be provided as layer 785 as shown in Figure 21(D). By passing white light through the color filter, light of a desired color can be obtained.

[0445] Furthermore, in Figures 21(E) and 21(F), the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of the same color, or they may be made of the same light-emitting material. Alternatively, the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of different colors. When the light emitted by the light-emitting layer 4411 and the light emitted by the light-emitting layer 4412 are complementary colors, white light emission is obtained. Figure 21(F) shows an example in which a layer 785 is further provided. As layer 785, one or both of a color conversion layer and a color filter (coloring layer) can be used.

[0446] Furthermore, in Figures 21(C), 21(D), 21(E), and 21(F), as shown in Figure 21(B), layer 4420 and layer 4430 may be a laminated structure consisting of two or more layers.

[0447] A structure in which each light-emitting device produces a different light-emitting color (for example, blue (B), green (G), and red (R)) is sometimes called an SBS (Side By Side) structure.

[0448] The light-emitting color of the light-emitting device can be red, green, blue, cyan, magenta, yellow, or white, depending on the material that makes up the EL layer 786. Furthermore, the color purity can be further enhanced by adding a microcavity structure to the light-emitting device.

[0449] A light-emitting device that emits white light preferably has a configuration that includes two or more types of light-emitting materials in its light-emitting layer. To obtain white light emission, it is sufficient to select light-emitting materials such that the light emitted by each of the two or more materials is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a light-emitting device that emits white light as a whole can be obtained. The same applies to light-emitting devices that have three or more light-emitting layers.

[0450] The light-emitting layer preferably contains two or more light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, it is preferable to have two or more light-emitting materials, and for each light-emitting material to emit light that contains spectral components of two or more colors from R, G, and B.

[0451] This embodiment can be combined with other embodiments as appropriate.

[0452] (Embodiment 6) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 22 to 26.

[0453] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0454] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0455] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0456] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device that has either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0457] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0458] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0459] Figures 22(A), (B) and 23(A), (B) illustrate an example of a wearable device that can be worn on the head. These wearable devices have the function of displaying AR content, or the function of displaying VR content, or both. In addition to AR and VR, these wearable devices may also have the function of displaying SR or MR content. By having electronic devices that can display AR, VR, SR, MR, etc., it is possible to enhance the user's sense of immersion.

[0460] The electronic device 700A shown in Figure 22(A) and the electronic device 700B shown in Figure 22(B) each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0461] A display device according to one aspect of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying extremely high resolution can be created.

[0462] Electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical element 753. Because the optical element 753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 753. Therefore, electronic devices 700A and 700B are electronic devices capable of AR display.

[0463] Electronic devices 700A and 700B may be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 700A and 700B may each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 756.

[0464] The communications unit has a wireless communication device, which can supply video signals and the like. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, it may be equipped with a connector to which a cable supplying video signals and power potential can be connected.

[0465] Furthermore, electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly, wired, or both.

[0466] The housing 721 may be equipped with a touch sensor module. The touch sensor module has the function of detecting when the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0467] Various types of touch sensors can be applied to the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, and optical sensors can be used. In particular, it is preferable to apply a capacitive or optical sensor to the touch sensor module.

[0468] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric element) can be used as the light-receiving device (also called a photoelectric element). The active layer of the photoelectric conversion device can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0469] The electronic device 800A shown in Figure 23(A) and the electronic device 800B shown in Figure 23(B) each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0470] A display device according to one embodiment of the present invention can be applied to the display unit 820. Therefore, an electronic device capable of displaying extremely high resolution can be created. This allows the user to experience a high level of immersion.

[0471] The display unit 820 is located inside the housing 821, in a position where it can be seen through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a three-dimensional display using parallax can also be performed.

[0472] Electronic devices 800A and 800B can be described as electronic devices for VR. A user wearing either electronic device 800A or electronic device 800B can view the image displayed on the display unit 820 through the lens 832.

[0473] It is preferable that electronic devices 800A and 800B each have a mechanism that allows adjustment of the left and right positions of the lens 832 and the display unit 820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 832 and the display unit 820.

[0474] The attachment portion 823 allows the user to attach the electronic device 800A or 800B to their head. While Figure 23(A) and other figures illustrate the attachment portion as resembling the temples (joints, arms, etc.) of eyeglasses, it is not limited to this shape. The attachment portion 823 only needs to be wearable by the user; for example, it may be helmet-shaped or band-shaped.

[0475] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0476] Although an example with an imaging unit 825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 825 is one form of a detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0477] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, housing 821, and mounting unit 823. This allows users to enjoy video and audio simply by wearing the electronic device 800A, without needing separate audio equipment such as headphones, earphones, or speakers.

[0478] Electronic devices 800A and 800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, etc., and power for charging batteries provided within the electronic devices.

[0479] An electronic device according to one aspect of the present invention may have a function for wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 700A shown in Figure 22(A) has a function for transmitting information to the earphone 750 through its wireless communication function. Also, for example, the electronic device 800A shown in Figure 23(A) has a function for transmitting information to the earphone 750 through its wireless communication function.

[0480] Furthermore, the electronic device may have an earphone section. The electronic device 700B shown in Figure 22(B) has an earphone section 727. For example, the earphone section 727 and the control section can be connected to each other by a wire. Part of the wiring connecting the earphone section 727 and the control section may be located inside the housing 721 or the mounting section 723.

[0481] Similarly, the electronic device 800B shown in Figure 23(B) has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be connected to each other by a wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be located inside the housing 821 or the mounting unit 823. Also, the earphone unit 827 and the mounting unit 823 may have magnets. This allows the earphone unit 827 to be fixed to the mounting unit 823 by magnetic force, which is preferable as it facilitates storage.

[0482] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a sound-collecting device such as a microphone can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0483] Thus, as one embodiment of the present invention, both eyeglass-type (electronic devices 700A and 700B, etc.) and goggle-type (electronic devices 800A and 800B, etc.) are preferred as electronic devices.

[0484] Furthermore, an electronic device according to one aspect of the present invention can transmit information to earphones via wired or wireless means.

[0485] The electronic device 6500 shown in Figure 24(A) is a portable information terminal that can be used as a smartphone.

[0486] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0487] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0488] Figure 24(B) is a schematic cross-sectional view of the housing 6501 including the end on the microphone 6506 side.

[0489] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0490] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0491] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0492] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0493] Figure 25(A) shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0494] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0495] The television device 7100 shown in Figure 25(A) can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0496] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0497] Figure 25(B) shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0498] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0499] Figures 25(C) and 25(D) show examples of digital signage.

[0500] The digital signage 7300 shown in Figure 25(C) comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may have LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0501] Figure 25(D) shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0502] In Figures 25(C) and 25(D), a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0503] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0504] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0505] Furthermore, as shown in Figures 25(C) and 25(D), it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0506] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0507] The electronic equipment shown in Figures 26(A) to 26(G) includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0508] In Figures 26(A) to 26(G), a display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0509] The electronic devices shown in Figures 26(A) to 26(G) have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0510] Details of the electronic equipment shown in Figures 26(A) to 26(G) will be explained below.

[0511] Figure 26(A) is a perspective view showing a personal digital information terminal (PDI) 9101. The PDI 9101 can be used, for example, as a smartphone. The PDI 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. Furthermore, the PDI 9101 can display text and image information on multiple surfaces. Figure 26(A) shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS, and phone calls, the subject of emails or SNS, sender name, date and time, time, battery level, and signal strength. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0512] Figure 26(B) is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0513] Figure 26(C) is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000. The left side of the housing 9000 has operation keys 9005 as buttons for operation, and the bottom has connection terminals 9006.

[0514] Figure 26(D) is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via the connection terminal 9006. Charging may be performed by wireless power supply.

[0515] Figures 26(E) to 26(G) are perspective views showing a foldable portable information terminal 9201. Figure 26(E) shows the portable information terminal 9201 in an unfolded state, Figure 26(G) shows it in a folded state, and Figure 26(F) shows a perspective view of the state in between Figures 26(E) and 26(G). The portable information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0516] This embodiment can be combined with other embodiments as appropriate. [Explanation of symbols]

[0517] ANO Wiring GL wiring SL wiring VCOM wiring 51A Pixel Circuit 51B Pixel Circuit 51C Pixel Circuit 51D Pixel Circuit 51E Pixel Circuit 51F Pixel Circuit 51G Pixel Circuit 51H Pixel Circuit 52A Transistor 52B Transistor 52C Transistor 52D Transistor 53A capacity 53 capacity 61 Light-emitting devices 100A display device 100B display device 100C display device 100D display device 100E display device 100F display device 100G display device 100H display device 100 display device 101 Layer containing transistors 110B subpixel 110G sub-pixels 110IR subpixels 110R sub-pixel 110S sub-pixel 110 pixels 111a Conductive layer 111b Conductive layer 111c conductive layer 111d conductive layer 111e Conductive layer 112b Conductive layer 112c conductive layer 112d conductive layer 112e conductive layer 113a First layer 113b Second layer 113c Third layer 113d The fourth layer 113e Fifth Layer 114 The 6th Layer 115 Common electrode 117 Light blocking layer 118a Sacrificial layer 118b Sacrificial layer 118th century Sacrificial layer 118d Sacrificial layer 118e Sacrificial layer 119a Sacrificial layer 119b Sacrificial layer 120 circuit boards 121 Insulating layer 122 Resin layer 123 Conductive layer 125 Insulating layer 126b Conductive layer 126c conductive layer 126d conductive layer 126e conductive layer 127 Insulating layer 128 layers 130B Light-emitting device 130G Light-emitting Device 130IR light-emitting device 130R Light-emitting Device 131 Protective layer 132B Colored layer 132G colored layer 132R colored layer 134 void 139 areas 140 Connection part 142 Adhesive layer 150 light receiving devices 151 circuit boards 152 circuit boards 153 Insulating layer 162 Display section 164 circuits 165 Wiring 166 Conductive layer 172 FPC 173 IC 201 Transistors 204 Connection part 205 transistors 209 transistors 210 transistors 211 Insulating layer 213 Insulating layer 214 Insulating layer 215 Insulating layer 218 Insulating layer 221 Conductive layer 222a conductive layer 222b Conductive layer 223 Conductive layer 225 Insulating layer 231i Channel formation region 231n Low resistance region 231 Semiconductor layer 240 capacity 241 Conductive layer 242 Connecting Layers 243 Insulating layer 245 Conductive layer 251 Conductive layer 252 Conductive layer 254 Insulating layer 255a Insulating layer 255b Insulating layer 256 plug 261 Insulating layer 262 Insulating layer 263 Insulating layer 264 Insulating layer 265 Insulating layer 271 Plug 274a conductive layer 274b Conductive layer 274 plug 280 Display Modules 281 Display section 282 Circuit section 283a Pixel Circuit 283 Pixel Circuit Section 284a pixels 284 pixel section 285 Terminal section 286 Wiring section 290 FPC 291 circuit boards 292 circuit boards 301A circuit board 301B circuit board 301 circuit board 310A Transistor 310B transistor 310 transistors 311 Conductive layer 312 Low resistance region 313 Insulating layer 314 Insulating layer 315 element isolation layer 320A Transistor 320B transistor 320 transistors 321 Semiconductor layer 323 Insulating layer 324 Conductive layer 325 Conductive layer 326 Insulating layer 327 Conductive layer 328 Insulating layer 329 Insulating layer 331 circuit boards 332 Insulating layer 335 Insulating layer 336 Insulating layer 341 Conductive layer 342 Conductive layer 343 Plug 344 Insulating layer 345 Insulating layer 346 Insulating layer 347 Bump 348 Adhesive layer 700A electronic equipment 700B Electronic equipment 721 cabinet 723 Mounting part 727 Earphone section 750 Earphones 751 Display Panel 753 Optical components 756 Display area 757 frames 758 Nose pads 772 Lower electrode 785 layers 786a EL layer 786b EL layer 786 EL layer 788 Upper electrode 800A electronic equipment 800B Electronic equipment 820 Display section 821 cabinet 822 Communications Department 823 Mounting part 824 Control Unit 825 Imaging Unit 827 Earphone section 832 Lens 941 Retina 942 crystalline lens 943 Optic nerve 944 Optic disc 945 Vein 946 Artery 947 Vitreous body 948 Choroid 950 Optical system 951 Emission 960 Eyebrows 961 Eyelashes 962 Pupil 963 Cornea 965 Sclera 966 Upper eyelid 967 Lower eyelid 980 Display device 4411 Emitting layer 4412 Emitting layer 4413 Emitting layer 4420 layers 4421 layers 4422 layers 4430 layers 4431 layers 4432 layers 4440 Charge generation layer 6500 Electronic equipment 6501 enclosure 6502 Display section 6503 Power button 6504 button 6505 Speaker 6506 Mike 6507 Camera 6508 Light source 6510 Protective component 6511 Display Panel 6512 Optical components 6513 Touch Sensor Panel 6515 FPC 6516 IC 6517 Printed circuit board 6518 Battery 7000 Display 7100 Television equipment 7101 enclosure 7103 Stand 7111 Remote Control Unit 7200 Notebook Personal Computer 7211 enclosure 7212 Keyboard 7213 Pointing device 7214 External connection port 7300 Digital Signage 7301 enclosure 7303 Speaker 7311 Information terminal 7400 Digital Signage 7401 pillars 7411 Information terminal 9000 cabinets 9001 Display section 9002 Camera 9003 Speaker 9005 Operation Keys 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Icon 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9101 Mobile Information Terminal 9102 Mobile Information Terminal 9103 Tablet device 9200 Mobile Information Terminal 9201 Mobile Information Terminal

Claims

1. A display unit having a first arrangement pattern and a second arrangement pattern arranged repeatedly in a first direction, In the first array pattern described above, the first subpixel, the second subpixel, and the third subpixel are repeatedly arranged in the second direction. In the second array pattern, the fourth subpixel and the fifth subpixel are repeatedly arranged in the second direction. Each of the first to fourth sub-pixels has a light-emitting device. The fifth sub-pixel has a light-receiving device, The fifth sub-pixel is a display device having the lowest aperture ratio among the first to fifth sub-pixels.

2. A display unit having a first arrangement pattern and a second arrangement pattern arranged repeatedly in a first direction, In the first array pattern described above, the first subpixel, the second subpixel, and the third subpixel are repeatedly arranged in the second direction. In the second array pattern, the fourth subpixel and the fifth subpixel are repeatedly arranged in the second direction. Each of the first to fourth sub-pixels has a light-emitting device. The fifth sub-pixel has a light-receiving device, The third sub-pixel emits infrared light and has the highest aperture ratio among the first to fifth sub-pixels, in a display device.

3. In Claim 2, Of the first subpixel and the second subpixel, one emits red light and the other emits green light. The fourth sub-pixel emits blue light, The fifth sub-pixel is a display device that detects at least infrared light.

4. A display unit having a first arrangement pattern and a second arrangement pattern arranged repeatedly in a first direction, In the first array pattern described above, the first subpixel, the second subpixel, and the third subpixel are repeatedly arranged in the second direction. In the second array pattern, the fourth subpixel and the fifth subpixel are repeatedly arranged in the second direction. Each of the first to fourth sub-pixels has a light-emitting device. The fifth sub-pixel has a light-receiving device, The display device wherein the fourth sub-pixel emits infrared light and has the highest aperture ratio among the first to fifth sub-pixels.

5. In Claim 4, Of the first subpixel and the second subpixel, one emits red light and the other emits green light. The third sub-pixel emits blue light, The fifth sub-pixel is a display device that detects at least infrared light.

6. A device comprising a display device according to any one of claims 1 to 5 and a processing unit, The display device has a function to perform imaging using the fifth sub-pixel, The processing unit is an electronic device having the function of detecting one or more of the user's blinking, pupil movement, and eyelid movement using imaging data captured by the display device.

7. At least two of the display devices according to any one of claims 1 to 5, A housing on which the display device is provided, The housing is provided with a battery that supplies power to the display device, The housing has a mounting portion and a pair of lenses. An image is projected onto one of the pair of lenses from one of the two display devices. An image is projected onto the other of the pair of lenses from the other of the two display devices. electronic equipment.

8. In claim 7, The housing has a processing unit provided within it, The display device has a function to perform imaging using the fifth sub-pixel, The processing unit is an electronic device having the function of detecting one or more of the user's blinking, pupil movement, and eyelid movement using imaging data captured by the display device.

Images