Vibration device

Abstract

To provide a vibration device that has good frequency power supply characteristics.SOLUTION: A vibration device 1 has a base 2, a semiconductor element 3, and a vibrator 4. The vibrator 4 has an excitation electrode. The semiconductor element 3 has an oscillation circuit 33. The base 2 has first wiring 101, 102, second wiring 103, and shield wiring 20. The first wiring 101, 102 electrically connect the excitation electrode and the semiconductor element 3 with each other. The second wiring 103 electrically connects an external terminal 222 and the semiconductor element 3 with each other. The shield wiring 20 is arranged between at least part of the first wiring 101, 102 and at least part of the second wiring 103.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a vibration device.

Background Art

[0002] Conventionally, as shown in Patent Document 1, a piezoelectric oscillator (vibration device) in which a piezoelectric vibrator and an IC chip which is a circuit for oscillating the piezoelectric vibrator are arranged in the vertical direction of a substrate is known. By arranging the piezoelectric vibrator, the IC chip, and the substrate in this way, the piezoelectric oscillator can be miniaturized.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the piezoelectric oscillator described in Patent Document 1, the distance between a pair of wirings for electrically connecting the piezoelectric vibrator and the IC chip to oscillate the piezoelectric vibrator and the wiring for electrically connecting the mounting terminals of the piezoelectric oscillator and the IC chip to output an output signal such as a clock signal approaches. Therefore, the parasitic capacitance generated between the pair of wirings for oscillating the piezoelectric vibrator and the wiring for outputting the output signal increases. Along with the increase in this parasitic capacitance, the difference between the parasitic capacitance between one of the pair of wirings for oscillating the piezoelectric vibrator and the wiring for outputting the output signal and the parasitic capacitance between the other of the pair of wirings for oscillating the piezoelectric vibrator and the wiring for outputting the output signal increases. And when the difference in this parasitic capacitance increases, there is a problem that the frequency power supply characteristics of the piezoelectric oscillator deteriorate. Note that the frequency power supply characteristics are the fluctuations of the output frequency with respect to the fluctuations of the power supply voltage, and the deterioration of the frequency power supply characteristics means that the fluctuations of the output frequency with respect to the fluctuations of the power supply voltage increase. [Means for solving the problem]

[0005] The vibration device is a vibration device in which a base, a semiconductor element having an oscillation circuit, and a vibrator having an excitation electrode are stacked in this order, and comprises a first wiring that electrically connects the excitation electrode and the semiconductor element, a second wiring that electrically connects an external output terminal located on the base and the semiconductor element, and a shielding wiring located between at least a portion of the first wiring and at least a portion of the second wiring. Furthermore, the vibration device is a vibration device in which a base, a semiconductor element having an oscillation circuit, and a vibrator having a first excitation electrode and a second excitation electrode are stacked in this order, and comprises a first wiring that electrically connects the first excitation electrode and the semiconductor element, a second wiring that electrically connects the second excitation electrode and the semiconductor element, a second wiring that electrically connects an external output terminal located on the base and the semiconductor element, and a shield wiring, wherein a first portion of the shield wiring, at least a portion of the first wiring, at least a portion of the second wiring, and a first portion of the second wiring are arranged on the surface of the base facing the semiconductor element, and the first portion of the shield wiring is arranged between at least a portion of the first wiring and the first portion of the second wiring, and between at least a portion of the second wiring and the first portion of the second wiring. [Brief explanation of the drawing]

[0006] [Figure 1] Cross-sectional view of the vibration device according to Embodiment 1. [Figure 2] A plan view of the vibration device according to Embodiment 1. [Figure 3] A plan view of the base according to Embodiment 1. [Figure 4] Cross-sectional view of the vibrator according to Embodiment 1. [Figure 5] A plan view of the vibrating element according to Embodiment 1. [Figure 6] Cross-sectional view of the vibration device according to Embodiment 2. [Figure 7] Cross-sectional view of the vibration device according to Embodiment 3. [Figure 8] Cross-sectional view of the vibration device according to Embodiment 4. [Figure 9] A plan view of the first base substrate according to Embodiment 4. [Figure 10] A plan view of the base according to Embodiment 4. [Figure 11] A plan view of the vibration device according to Embodiment 4. [Figure 12] Cross-sectional view along line AA in Figure 10. [Figure 13] Cross-sectional view of the vibration device according to Embodiment 5. [Figure 14] A plan view of the vibration device according to Embodiment 5. [Figure 15] A plan view of the base according to Embodiment 5. [Modes for carrying out the invention]

[0007] Next, embodiments of the present disclosure will be described with reference to the drawings. For the sake of explanation, the following diagrams illustrate the X, Y, and Z axes as three mutually orthogonal axes. The direction along the X axis is called the "X direction," the direction along the Y axis is called the "Y direction," and the direction along the Z axis is called the "Z direction." The tip of the arrow in each axis direction is also called the "positive side," and the base of the arrow is called the "negative side." For example, the Y direction refers to both the positive and negative Y directions. The positive Z direction is also called "up," and the negative Z direction is also called "down." A plan view from the Z direction is simply called a "plan view."

[0008] 1. Embodiment 1 The vibration device 1 according to Embodiment 1 will be described with reference to Figures 1 to 5. In this embodiment, the vibration device 1 is an oscillator. However, the vibration device 1 does not have to be an oscillator. For example, the vibration device 1 may be an inertial sensor or the like.

[0009] As shown in Figures 1 and 2, the vibration device 1 comprises a base 2, a semiconductor element 3, and an oscillator 4. The base 2, semiconductor element 3, and oscillator 4 are stacked in this order along the vertical Z-direction. In this embodiment, the semiconductor element 3 is placed on the upper surface of the base 2, and the oscillator 4 is placed on the upper surface of the semiconductor element 3. A molded portion M is provided on the upper surface side of the base 2 to seal the semiconductor element 3 and the oscillator 4. Note that in Figure 2, the molded portion M is omitted for the sake of explanation.

[0010] The mold part M can protect each part of the vibration device 1 such as the semiconductor element 3 and the vibrator 4 from moisture, dust, impact, etc. The material for forming the mold part M is not particularly limited. As the material for forming the mold part M, for example, a thermosetting resin such as an epoxy resin can be used. The mold part M can be formed, for example, by using a compression molding method. In this embodiment, the mold part M is used, but the semiconductor element 3 and the vibrator 4 may be sealed by joining a lid body having a recess capable of accommodating the semiconductor element 3 and the vibrator 4 to the upper surface of the base 2.

[0011] First, the base 2 will be described. In this embodiment, the base 2 is in a flat plate shape. The base 2 has an upper surface which is a surface of the base 2 facing the semiconductor element 3, a lower surface which is in a front-back relationship with the upper surface of the base 2, and a side surface connecting the upper surface and the lower surface of the base 2. The material for forming the base 2 is not particularly limited. For example, a ceramic substrate or the like can be used as the base 2.

[0012] As shown in FIGS. 1 and 3, a first external terminal 221, a second external terminal 222, a third external terminal 223, and a fourth external terminal 224 are arranged on the lower surface of the base 2. The first external terminal 221, the second external terminal 222, the third external terminal 223, and the fourth external terminal 224 are external terminals for electrically connecting the vibration device 1 to the outside.

[0013] The first external terminal 221 is arranged at a corner on the plus side in the X direction and the plus side in the Y direction on the lower surface of the base 2. The second external terminal 222 is arranged at a corner on the plus side in the X direction and the minus side in the Y direction on the lower surface of the base 2. The third external terminal 223 is arranged at a corner on the minus side in the X direction and the minus side in the Y direction on the lower surface of the base 2. The fourth external terminal 224 is arranged at a corner on the minus side in the X direction and the plus side in the Y direction on the lower surface of the base 2.

[0014] The first external terminal 221 is a grounding terminal for connecting to the earth potential. In this disclosure, the earth potential refers to a reference potential having a constant potential. The second external terminal 222 is an external output terminal for outputting a reference signal such as a clock signal. The third external terminal 223 is a power supply terminal for connecting to a power supply. The fourth external terminal 224 is an output enable terminal for controlling the output from the second external terminal 222, which is an external output terminal.

[0015] Furthermore, the base 2 is provided with a plurality of vias 231, 232, 233, and 234 that penetrate between the upper and lower surfaces of the base 2. Vias 231, 232, 233, and 234 are through electrodes formed by filling through holes that penetrate the base 2 with a conductor. Vias 231, 232, 233, and 234 are arranged to overlap with the first external terminal 221, the second external terminal 222, the third external terminal 223, and the fourth external terminal 224 in a plan view, respectively.

[0016] As shown in Figures 2 and 3, the upper surface of the base 2 is arranged with a first connection wire 211, a second connection wire 212, a third connection wire 213, a fourth connection wire 214, a fifth connection wire 215, and a sixth connection wire 216, which are electrically connected to the semiconductor element 3.

[0017] The first connection wiring 211 is positioned so as to overlap with via 231 in a plan view. The first connection wiring 211 and the first external terminal 221 are electrically connected via via 231. In other words, the first connection wiring 211 is connected to the ground potential via via 231 and the first external terminal 221, which is the ground terminal. The first connection wiring 211 can also function as shield wiring 20, as will be described later.

[0018] The second connection wiring 212 is positioned so as to overlap with via 232 in a plan view. The second connection wiring 212 and the second external terminal 222 are electrically connected via via 232.

[0019] The third connection wire 213 is positioned so as to overlap with via 233 in a plan view. The third connection wire 213 and the third external terminal 223 are electrically connected via via 233. A portion of the fourth connection wire 214 is positioned so as to overlap with the fourth external terminal 224 and via 234 in a plan view. The fourth connection wire 214 and the fourth external terminal 224 are electrically connected via via 234.

[0020] The fifth connection wire 215 and the sixth connection wire 216 are positioned on the upper surface of the base 2 between the third connection wire 213 and the fourth connection wire 214. The third connection wire 213, the fifth connection wire 215, the sixth connection wire 216, and the fourth connection wire 214 are positioned in this order toward the positive side in the Y direction.

[0021] Furthermore, the fifth connection wiring 215 and the sixth connection wiring 216, and the second connection wiring 212 are arranged on either side of the transducer 4 in a plan view. More specifically, the fifth connection wiring 215 and the sixth connection wiring 216, which constitute part of the first wirings 101 and 102, are arranged on the negative X-direction side, which is one side of the transducer 4, in a plan view. The second connection wiring 212, which constitute part of the second wiring 103, is arranged on the positive X-direction side, which is the other side of the transducer 4, in a plan view. The first wirings 101 and 102 and the second wiring 103 will be described later.

[0022] Next, I will explain semiconductor device 3. As shown in Figure 1, the semiconductor element 3 comprises a semiconductor substrate 31 and a circuit section 32. In this embodiment, the circuit section 32 is located on the lower surface of the semiconductor substrate 31. That is, the upper surface of the semiconductor element 3 is the upper surface of the semiconductor substrate 31, and the lower surface of the semiconductor element 3 is the lower surface of the circuit section 32.

[0023] The semiconductor substrate 31 is in the shape of a flat plate. The material used to form the semiconductor substrate 31 is not particularly limited. For example, silicon, germanium, silicon-germanium, etc., can be used as the semiconductor substrate 31.

[0024] The circuit section 32 is an integrated circuit in which multiple active elements, such as transistors (not shown), are electrically connected by wiring (not shown). The circuit section 32 has an oscillation circuit 33 that generates the frequency of a reference signal, such as a clock signal, by causing the vibration element 5 of the oscillator 4 to oscillate. In addition to the oscillation circuit 33, the circuit section 32 may also have a temperature compensation circuit that corrects the vibration characteristics of the vibration element 5 according to temperature changes, a processing circuit that processes the output signal from the oscillation circuit 33, an electrostatic discharge protection circuit, and the like.

[0025] As shown in Figures 1 and 2, the lower surface of the semiconductor element 3 is provided with a first connection terminal 321, a second connection terminal 322, a third connection terminal 323, a fourth connection terminal 324, a fifth connection terminal 325, and a sixth connection terminal 326. The first connection terminal 321, the second connection terminal 322, the third connection terminal 323, the fourth connection terminal 324, the fifth connection terminal 325, and the sixth connection terminal 326 are electrically connected to the circuit section 32 by wiring (not shown).

[0026] Furthermore, the fifth connection terminal 325 and the sixth connection terminal 326, and the second connection terminal 322 are positioned on either side of the transducer 4 in a plan view. More specifically, the fifth connection terminal 325 and the sixth connection terminal 326 are positioned on one side of the transducer 4, which is the negative X-direction side, in a plan view. The second connection terminal 322 is positioned on the other side of the transducer 4, which is the positive X-direction side, in a plan view.

[0027] The first connection terminal 321 is a grounding terminal for connecting to ground potential. The second connection terminal 322 is a reference signal output terminal for outputting a reference signal such as a clock signal. The third connection terminal 323 is a power terminal for connecting to a power supply. The fourth connection terminal 324 is an output enable terminal for controlling the output from the second connection terminal 322, which is the reference signal output terminal. The fifth connection terminal 325 and the sixth connection terminal 326 are drive signal output terminals for outputting drive signals to cause the oscillator 4 to oscillate. The oscillator 4 oscillates based on the drive signals output from the fifth connection terminal 325 and the sixth connection terminal 326.

[0028] Furthermore, bumps B1, B2, B3, B4, B5, and B6 are placed between the base 2 and the semiconductor element 3. The base 2 and the semiconductor element 3 are bonded via bumps B1, B2, B3, B4, B5, and B6. In other words, the semiconductor element 3 is mounted on the top surface of the base 2 via bumps B1, B2, B3, B4, B5, and B6 using the flip-chip bonding method. The bumps B1, B2, B3, B4, B5, and B6 are not particularly limited as long as they have conductivity and bonding properties. For example, gold bumps, silver bumps, copper bumps, solder bumps, etc., can be used.

[0029] In detail, for example, bump B1 is positioned so as to overlap, in a plan view, with the first connection wiring 211 located on the upper surface of base 2 and the first connection terminal 321 located on the lower surface of semiconductor element 3. In this way, the first connection terminal 321 and the first connection wiring 211 are electrically connected via bump B1. Similarly, the second connection terminal 322 and the second connection wiring 212 are electrically connected via bump B2. The third connection terminal 323 and the third connection wiring 213 are electrically connected via bump B3. The fourth connection terminal 324 and the fourth connection wiring 214 are electrically connected via bump B4. The fifth connection terminal 325 and the fifth connection wiring 215 are electrically connected via bump B5. The sixth connection terminal 326 and the sixth connection wiring 216 are electrically connected via bump B6. Note that bumps B1, B2, B3, B4, B5, and B6 may be provided on either the base 2 or the semiconductor element 3.

[0030] An oscillator 4 is placed on the upper surface of the semiconductor element 3. The semiconductor element 3 and the oscillator 4 are joined together via an adhesive D1.

[0031] Next, we will explain the oscillator 4. As shown in Figures 1 and 4, the oscillator 4 comprises a vibrating element 5 and a package 6 that houses the vibrating element 5.

[0032] First, let me explain the vibration element 5. As shown in Figures 4 and 5, the vibrating element 5 includes a vibrating substrate 51 and electrodes 52 arranged on the surface of the vibrating substrate 51.

[0033] The vibrating substrate 51 is flat. The vibrating substrate 51 has a thin vibrating portion 511 and a thick portion 512 located around the vibrating portion 511, which is thicker than the vibrating portion 511. In this embodiment, the vibrating substrate 51 is an AT-cut quartz substrate.

[0034] The electrode 52 includes a pair of excitation electrodes 521 and 522, a pair of pad electrodes 523 and 524, and a pair of lead wires 525 and 526. The excitation electrode 521 is positioned on the upper surface of the vibrating section 511. The excitation electrode 522 is positioned on the lower surface of the vibrating section 511. The excitation electrodes 521 and 522 are positioned opposite each other via the vibrating substrate 51. The pad electrode 523 is positioned on the upper surface of the thickened section 512. The pad electrode 524 is positioned on the lower surface of the thickened section 512. The pad electrodes 523 and 524 are positioned opposite each other via the vibrating substrate 51. The lead wire 525 is positioned on the upper surface of the thickened section 512 and electrically connects the excitation electrode 521 and the pad electrode 523. The lead wire 526 is positioned on the lower surface of the thickened section 512 and electrically connects the excitation electrode 522 and the pad electrode 524.

[0035] By applying drive signals to the excitation electrodes 521 and 522 via the pad electrodes 523 and 524 and the lead wiring 525 and 526, thickness-sliding vibrations can be excited in the vibrating section 511 sandwiched between the excitation electrodes 521 and 522.

[0036] The above is a brief explanation of the vibration element 5. The configuration of the vibration element 5 is not limited to the configuration described above. For example, the vibration element 5 is not limited to a flat plate-shaped vibration element that vibrates with thickness shear. For example, it may be a vibration element in which multiple vibration arms bend and vibrate in the in-plane direction, or a vibration element in which multiple vibration arms bend and vibrate out-of-plane direction. Also, for example, it may be a vibration element that uses an X-cut quartz substrate, Y-cut quartz substrate, Z-cut quartz substrate, BT-cut quartz substrate, SC-cut quartz substrate, ST-cut quartz substrate, etc., as the vibration substrate 51. Also, for example, it may be a vibration element that uses a piezoelectric material other than quartz. Also, for example, it may be a SAW (Surface Acoustic Wave) resonator or a MEMS (Micro Electro Mechanical Systems) resonator in which a piezoelectric element is arranged on a semiconductor substrate such as silicon.

[0037] Next, we will explain the package 6 that houses the vibration element 5. As shown in Figure 4, the package 6 has a base 61 and a lid 62 which is a cover. In this embodiment, the lid 62 is located on the lower surface of the base 61. That is, the upper surface of the oscillator 4 is the upper surface of the base 61, and the lower surface of the oscillator 4 is the lower surface of the lid 62.

[0038] The base 61 is box-shaped and has a recess 611. The recess 611 has an opening on the lower side of the base 61. In other words, the base 61 has a flat base portion 612 and a frame-shaped side wall portion 613 that is erected downward from the outer circumference of the base portion 612.

[0039] The lid 62 is flat. The lid 62 is joined to the lower surface of the base 61 so as to close the opening of the recess 611. By closing the recess 611 with the lid 62, a housing space S is formed. The vibration element 5 is housed in the housing space S. The housing space S is, for example, in a reduced-pressure state.

[0040] The materials constituting the substrate 61 and lid 62 are not particularly limited. For example, the substrate 61 and lid 62 can be ceramic substrates such as aluminum oxide, glass substrates, or semiconductor substrates such as silicon. If the substrate 61 is a ceramic substrate, the lid 62 may be made of an alloy such as Kovar, which has a coefficient of thermal expansion similar to that of the ceramic substrate.

[0041] Furthermore, internal electrodes 615 and 616 are positioned on the bottom surface of the recess 611. The vibrating element 5 is positioned such that the upper surface of the vibrating substrate 51 faces the bottom surface of the recess 611. The pad electrode 523 and the internal electrode 615, which are positioned on the upper surface of the vibrating substrate 51, are joined together via a conductive adhesive 617. In other words, the conductive adhesive 617 fixes the vibrating element 5 to the bottom surface of the recess 611, and also electrically connects the pad electrode 523 and the internal electrode 615. The pad electrode 524 and the internal electrode 616, which are positioned on the lower surface of the vibrating substrate 51, are electrically connected via a conductive wire W1.

[0042] As shown in Figures 2 and 4, the first electrode terminal 63, the second electrode terminal 64, the third electrode terminal 65, and the fourth electrode terminal 66 are arranged on the upper surface of the base body 61.

[0043] As shown in Figure 4, the first electrode terminal 63 is electrically connected to the internal electrode 615 via internal wiring (not shown) provided within the base 61. In other words, as shown in Figures 4 and 5, the first electrode terminal 63 is electrically connected to the excitation electrode 521 via the internal electrode 615, the pad electrode 523, and the lead-out wiring 525. Also, as shown in Figures 1 and 2, the first electrode terminal 63 and the fifth connecting wiring 215 located on the upper surface of the base 2 are electrically connected via a conductive wire W2.

[0044] As shown in Figure 4, the second electrode terminal 64 is electrically connected to the internal electrode 616 via internal wiring (not shown) provided within the base 61. In other words, as shown in Figures 4 and 5, the second electrode terminal 64 is electrically connected to the excitation electrode 522 via the internal electrode 616, the pad electrode 524, and the lead-out wiring 526. Also, as shown in Figures 1 and 2, the second electrode terminal 64 and the sixth connecting wiring 216 located on the upper surface of the base 2 are electrically connected via a conductive wire W3.

[0045] The third electrode terminal 65 is a grounding terminal for connecting to the ground potential. The third electrode terminal 65 is electrically connected to various parts of the transducer 4, such as the vibrating element 5 and the lid 62, via internal wiring (not shown) provided within the base 61. The third electrode terminal 65 and the first connecting wiring 211 located on the upper surface of the base 2 are electrically connected via a conductive wire W4. The third electrode terminal 65 may be a dummy terminal that is not electrically connected to any part of the transducer 4. The third electrode terminal 65 may also be omitted.

[0046] Wires W2, W3, and W4 are bonding wires formed using the wire bonding method. For example, gold wire, copper wire, aluminum wire, etc., can be used as wires W2, W3, and W4.

[0047] The fourth electrode terminal 66 is a dummy terminal that is not electrically connected to any part of the transducer 4. In this embodiment, the fourth electrode terminal 66, being a dummy terminal, is electrically floating, but it may be connected to ground potential, similar to the third electrode terminal 65. Also, the fourth electrode terminal 66 may be omitted.

[0048] The base 2, semiconductor element 3, and oscillator 4 have been described above. Next, the first wiring 101, 102, the second wiring 103, and the shield wiring 20 of the vibration device 1 will be described.

[0049] First, let me explain the first wiring 101 and 102. As shown in Figures 1 and 2, the first wirings 101 and 102 are wires that electrically connect the excitation electrodes 521 and 522 of the oscillator 4 to the semiconductor element 3. In other words, the first wirings 101 and 102 are a pair of drive wires that apply a drive signal to the excitation electrodes 521 and 522 to cause the oscillator 4 to oscillate. In the following, when distinguishing between the first wiring 101 that electrically connects the excitation electrode 521 and the semiconductor element 3 and the first wiring 102 that electrically connects the excitation electrode 522 and the semiconductor element 3, the first wiring 101 that electrically connects the excitation electrode 521 and the semiconductor element 3 will also be called the first drive wire 101, and the first wiring 102 that electrically connects the excitation electrode 522 and the semiconductor element 3 will also be called the second drive wire 102.

[0050] In this embodiment, the first drive wiring 101 includes a first electrode terminal 63 located on the upper surface of the vibrator 4, a fifth connection wiring 215 located on the upper surface of the base 2, and a wire W2 that electrically connects the first electrode terminal 63 and the fifth connection wiring 215. The second drive wiring 102 includes a second electrode terminal 64 located on the upper surface of the vibrator 4, a sixth connection wiring 216 located on the upper surface of the base 2, and a wire W3 that electrically connects the second electrode terminal 64 and the sixth connection wiring 216.

[0051] The drive signals output from the fifth connection terminal 325 and the sixth connection terminal 326, located on the lower surface of the semiconductor element 3, are applied to the excitation electrodes 521 and 522 via the first drive wiring 101 and the second drive wiring 102, respectively. This causes the oscillator 4 to oscillate.

[0052] Next, I will explain the second wiring 103. As shown in Figures 1 and 3, the second wiring 103 is a wiring that electrically connects the second external terminal 222, which is an external output terminal located on the base 2, and the semiconductor element 3. In other words, the second wiring 103 is an output wiring for outputting the reference signal output from the semiconductor element 3 to the outside of the vibration device 1.

[0053] In this embodiment, the second wiring 103 includes a second external terminal 222, a second connection wiring 212, and a via 232 that electrically connects the second external terminal 222 and the second connection wiring 212. The reference signal output from the second connection terminal 322 located on the lower surface of the semiconductor element 3 is output to the outside of the vibration device 1 via the second wiring 103, which is the output wiring.

[0054] Next, I will explain the shielded wiring 20. As shown in Figures 1 and 2, the shield wiring 20 is a wiring placed between the first wirings 101, 102 and the second wiring 103. By placing the shield wiring 20 between the first wirings 101, 102 and the second wiring 103, the electric field generated between the first wirings 101, 102 and the second wiring 103 is shielded by the shield wiring 20. In other words, by placing the shield wiring 20 between the first wirings 101, 102 and the second wiring 103, the parasitic capacitance generated between the first wirings 101, 102, which cause the oscillator 4 to oscillate, and the second wiring 103, which outputs the reference signal, can be reduced. Furthermore, by reducing the parasitic capacitance between the first wirings 101, 102 and the second wiring 103, the difference between the parasitic capacitance between the first drive wiring 101 and the second wiring 103 and the parasitic capacitance between the second drive wiring 102 and the second wiring 103 can be reduced. As a result, the fluctuation of the output frequency in response to fluctuations in the power supply voltage becomes smaller, and a vibration device 1 with good frequency power supply characteristics can be provided.

[0055] Next, we will explain the shielded wiring 20 in detail. In this embodiment, the first connecting wire 211, which is positioned on the upper surface of the base 2, functions as a shielding wire 20. More specifically, the first connecting wire 211 has the function of electrically connecting the first external terminal 221, which is the grounding terminal of the vibration device 1, and the first connecting terminal 321, which is the grounding terminal of the semiconductor element 3, as well as functioning as a shielding wire 20 connected to the ground potential.

[0056] As shown in Figures 2 and 3, the first connecting wire 211 has a portion that overlaps with the transducer 4 in a plan view. The portion of the first connecting wire 211 that overlaps with the transducer 4 in a plan view has approximately the same shape as the transducer 4. The portion of the first connecting wire 211 that overlaps with the transducer 4 in a plan view functions as a shielding wire 20.

[0057] As shown in Figures 1 and 2, in this embodiment, the first connecting wire 211 as shielding wire 20 is positioned, for example, between the fifth connecting wire 215 and the sixth connecting wire 216 of the first wires 101 and 102 and the second connecting wire 212 of the second wire 103. Also, the first connecting wire 211 as shielding wire 20 is positioned, for example, between the wires W2 and W3 of the first wires 101 and 102 and the second external terminal 222 of the second wire 103. In other words, the first connecting wire 211, which serves as the shielded wire 20, is positioned between at least a portion of the first wires 101 and 102 and at least a portion of the second wire 103. To put it another way, there exists a straight line that passes through the first wirings 101 and 102, the first connecting wiring 211 as the shield wiring 20, and the second wiring 103. More specifically, there exists a straight line that passes through the first drive wiring 101, the shield wiring 20, and the second wiring 103, or a straight line that passes through the second drive wiring 102, the shield wiring 20, and the second wiring 103. It is also possible for both a straight line that passes through the first drive wiring 101, the shield wiring 20, and the second wiring 103, and a straight line that passes through the second drive wiring 102, the shield wiring 20, and the second wiring 103 to exist.

[0058] In this way, by arranging the first connecting wiring 211 as shield wiring 20 between at least a portion of the first wirings 101 and 102 and at least a portion of the second wiring 103, the difference between the parasitic capacitance between the first drive wiring 101 and the second wiring 103 and the parasitic capacitance between the second drive wiring 102 and the second wiring 103 can be reduced. As a result, the fluctuation of the output frequency in response to fluctuations in the power supply voltage becomes smaller, and a vibration device 1 with good frequency power supply characteristics can be provided.

[0059] In this embodiment, the shielding wiring 20 is located on the base 2, but the member on which the shielding wiring 20 is located is not limited to the base 2. The shielding wiring 20 may be located between at least a portion of the first wirings 101, 102 and at least a portion of the second wiring 103 so as to shield at least a portion of the electric field generated between the first wirings 101, 102 and the second wiring 103. For example, the shielding wiring 20 may be located on the semiconductor element 3 or the oscillator 4.

[0060] Furthermore, in this embodiment, the shield wiring 20 is arranged on the upper surface of the base 2, which is the surface facing the semiconductor element 3, but it may also be arranged inside the base 2. Furthermore, in this embodiment, the shield wiring 20 is positioned between a portion of the first wirings 101, 102 and a portion of the second wiring 103, but it may also be positioned between all of the first wirings 101, 102 and all of the second wiring 103. For example, by positioning the shield wiring 20 at multiple locations such as the top surface of the base 2, the inside of the base 2, and the semiconductor element 3, the shield wiring 20 can be positioned between all of the first wirings 101, 102 and all of the second wiring 103.

[0061] As described above, the following effects can be obtained according to this embodiment. The vibration device 1 is stacked in the following order: a base 2, a semiconductor element 3 having an oscillation circuit 33, and an oscillator 4 having excitation electrodes 521 and 522. It also includes first wirings 101 and 102 that electrically connect the excitation electrodes 521 and 522 to the semiconductor element 3, a second wiring 103 that electrically connects the second external terminal 222, which is an external output terminal located on the base 2, to the semiconductor element 3, and a shield wiring 20 that is located between at least a portion of the first wirings 101 and 102 and at least a portion of the second wiring 103. This reduces the difference between the parasitic capacitance between the first drive wiring 101, which is one of the first wirings 101 and 102 for causing the oscillator 4 to oscillate, and the second wiring 103, which is the wiring that outputs the reference signal, and between the parasitic capacitance between the second drive wiring 102, which is the other of the first wirings 101 and 102, and the second wiring 103. As a result, the fluctuation of the output frequency in response to fluctuations in the power supply voltage becomes smaller, and a vibration device 1 with good frequency power supply characteristics can be provided.

[0062] 2. Embodiment 2 Next, the vibration device 1a according to Embodiment 2 will be described with reference to Figure 6. The vibration device 1a of Embodiment 2 is the same as that of Embodiment 1, except that the semiconductor substrate 31 of the semiconductor element 3 is connected to the ground potential and the semiconductor substrate 31 functions as a shielding wire 20a. Components identical to those in Embodiment 1 are denoted by the same reference numerals, and redundant explanations are omitted.

[0063] In this embodiment, the semiconductor substrate 31 of the semiconductor element 3 is connected to ground potential. For example, the semiconductor substrate 31 can be connected to ground potential by electrically connecting the semiconductor substrate 31 and the first connection terminal 321, which is a ground terminal as shown in Figure 2, via internal wiring (not shown) provided in the circuit section 32. The semiconductor substrate 31 connected to ground potential corresponds to a constant potential layer that is maintained at a constant potential. In other words, the semiconductor element 3 has a semiconductor substrate 31 that functions as a constant potential layer that is maintained at a constant potential.

[0064] As shown in Figure 6, the semiconductor substrate 31, which acts as a constant potential layer, can function as a shield wiring 20a. In this embodiment, the semiconductor substrate 31, which serves as the shield wiring 20a, is positioned, for example, between the first electrode terminals 63 and 2 electrode terminals 64 of the first wirings 101 and 102 and the second connecting wiring 212 of the second wiring 103.

[0065] In this way, by arranging the semiconductor substrate 31 as shield wiring 20a between at least a portion of the first wirings 101 and 102 and at least a portion of the second wiring 103, the difference between the parasitic capacitance between the first drive wiring 101 and the second wiring 103 and the parasitic capacitance between the second drive wiring 102 and the second wiring 103 can be reduced. As a result, the fluctuation of the output frequency in response to fluctuations in the power supply voltage becomes smaller, and a vibration device 1a with good frequency power supply characteristics can be provided.

[0066] In this embodiment, the semiconductor substrate 31 connected to the ground potential is used as a constant potential layer for the shield wiring 20a, but the constant potential layer of the semiconductor element 3 does not have to be the semiconductor substrate 31. For example, a conductive layer connected to the ground potential may be placed on the top, bottom, or inside of the semiconductor element 3, and this conductive layer may be used as a constant potential layer for the shield wiring 20a.

[0067] Furthermore, in this embodiment, the vibration device 1a has shield wiring 20 in addition to shield wiring 20a, but shield wiring 20 may be omitted.

[0068] As described above, according to this embodiment, by arranging the semiconductor substrate 31, which is a constant potential layer maintained at a constant potential, as a shield wiring 20a between at least a portion of the first wirings 101 and 102 and at least a portion of the second wiring 103, the same effects as in Embodiment 1 can be obtained.

[0069] 3. Embodiment 3 Next, the vibration device 1b according to Embodiment 3 will be described with reference to Figure 7. The vibration device 1b of Embodiment 3 is the same as that of Embodiment 1, except that the lid 62 functions as shield wiring 20b. Components identical to those in Embodiment 1 are denoted by the same reference numerals, and redundant explanations are omitted.

[0070] In this embodiment, the lid 62 of the vibrator 4 is formed of a conductive material. For example, the lid 62 is formed of an alloy such as Kovar.

[0071] As shown in Figure 7, the lid 62, formed from a conductive material, can function as a shielded wiring 20b. In this embodiment, the lid 62, which serves as the shield wiring 20b, is positioned, for example, between the first electrode terminals 63 and 2 electrode terminals 64 of the first wirings 101 and 102 and the second connecting wiring 212 of the second wiring 103.

[0072] In this way, by placing the lid 62 as shield wiring 20b between at least a portion of the first wirings 101 and 102 and at least a portion of the second wiring 103, the difference between the parasitic capacitance between the first drive wiring 101 and the second wiring 103 and the parasitic capacitance between the second drive wiring 102 and the second wiring 103 can be reduced. As a result, the fluctuation of the output frequency in response to fluctuations in the power supply voltage becomes smaller, and a vibration device 1b with good frequency power supply characteristics can be provided.

[0073] The lid 62, which serves as the shield wiring 20b, may be electrically floating, but it may also be connected to the ground potential. By connecting the lid 62 to the ground potential, the difference between the parasitic capacitance between the first drive wiring 101 and the second wiring 103, and between the second drive wiring 102 and the second wiring 103, can be further reduced compared to the state in which the lid 62 is electrically floating.

[0074] Here, we will describe an example of a configuration in which the lid 62, which serves as the shield wiring 20b, is connected to the ground potential. For example, the adhesive D1 that joins the upper surface of the semiconductor element 3 and the lower surface of the lid 62 may be a conductive adhesive. By using a conductive adhesive for the adhesive D1, the lid 62 is electrically connected to the semiconductor substrate 31 of the semiconductor element 3 via the adhesive D1. Therefore, by connecting the semiconductor substrate 31 to the ground potential, the lid 62, which acts as the shield wiring 20b, can be connected to the ground potential.

[0075] The configuration for connecting the lid 62, which serves as the shield wiring 20b, to the ground potential is not limited to the configuration described above. For example, the third electrode terminal 65, which is a ground terminal located on the upper surface of the oscillator 4, and the lid 62 may be electrically connected via internal wiring (not shown) within the base 61.

[0076] Furthermore, in this embodiment, the vibration device 1b has shield wiring 20 in addition to shield wiring 20b, but shield wiring 20 may be omitted.

[0077] As described above, according to this embodiment, by arranging the lid 62 as shield wiring 20b between at least a portion of the first wirings 101 and 102 and at least a portion of the second wiring 103, the same effects as in Embodiment 1 can be obtained.

[0078] 4. Embodiment 4 Next, the vibration device 1c according to Embodiment 4 will be described with reference to Figures 8 to 12. Note that in Figure 11, the molded portion M is omitted for the sake of explanation. The vibration device 1c of Embodiment 4 is the same as that of Embodiment 1, except that the base 2c is a multilayer substrate and the shield wiring 20c is arranged between the layers of the multilayer substrate. Components identical to those in Embodiment 1 are denoted by the same reference numerals, and redundant explanations are omitted.

[0079] As shown in Figure 8, the base 2c is a multilayer substrate in which multiple substrates are stacked. In this embodiment, the base 2c is a multilayer substrate in which a first base substrate 201 and a second base substrate 202 are stacked. The second base substrate 202 is placed on the upper surface of the first base substrate 201. The upper surface of the second base substrate 202 is the upper surface of the base 2c. The lower surface of the first base substrate 201 is the lower surface of the base 2c.

[0080] In this embodiment, the base 2c is a multilayer substrate in which two substrates, a first base substrate 201 and a second base substrate 202, are stacked. However, the base 2c may also be a multilayer substrate in which three or more substrates are stacked.

[0081] First, we will explain the wiring that is placed between the layers of the first base substrate 201 and the second base substrate 202. As shown in Figures 9 and 10, the seventh connecting wire 241, the eighth connecting wire 242, the ninth connecting wire 243, the tenth connecting wire 244, the eleventh connecting wire 245, and the twelfth connecting wire 246 are arranged between the layers of the first base substrate 201 and the second base substrate 202. The seventh connecting wire 241 can be connected to the ground potential and function as a shield wire 20c, as will be described later. In Figure 9, for the sake of clarity, the seventh connection wiring 241, eighth connection wiring 242, ninth connection wiring 243, tenth connection wiring 244, eleventh connection wiring 245, and twelfth connection wiring 246, which are arranged between the layers of the first base substrate 201 and the second base substrate 202, are shown positioned on the upper surface of the first base substrate 201.

[0082] Next, the first base substrate 201 will be described. As shown in Figure 9, the first external terminal 221, the second external terminal 222, the third external terminal 223, and the fourth external terminal 224 are arranged on the lower surface of the first base substrate 201.

[0083] The first base substrate 201 is provided with a plurality of vias 231c, 232c, 233c, and 234c that penetrate between the upper and lower surfaces of the first base substrate 201. Each of the vias 231c, 232c, 233c, and 234c is a through-electrode formed by filling through-holes that penetrate the first base substrate 201 with a conductive material.

[0084] The seventh connection wire 241 and the first external terminal 221 are electrically connected via via 231c. The eighth connection wire 242 and the second external terminal 222 are electrically connected via via 232c. The ninth connection wire 243 and the third external terminal 223 are electrically connected via via 233c. The tenth connection wire 244 and the fourth external terminal 224 are electrically connected via via 234c.

[0085] Next, we will explain the second base substrate 202. As shown in Figures 10 and 11, the first connection wiring 211, the second connection wiring 212, the third connection wiring 213, the fourth connection wiring 214, the fifth connection wiring 215, and the sixth connection wiring 216 are arranged on the upper surface of the second base substrate 202.

[0086] The second base substrate 202 is provided with a plurality of vias 231d, 232d, 233d, 234d, 235, and 236 that penetrate between the upper and lower surfaces of the second base substrate 202. Each of the vias 231d, 232d, 233d, 234d, 235, and 236 is a through-electrode formed by filling through-holes that penetrate the second base substrate 202 with a conductive material.

[0087] The first connection wire 211 and the seventh connection wire 241 are electrically connected via via 231d. The second connection wire 212 and the eighth connection wire 242 are electrically connected via via 232d. The third connection wire 213 and the ninth connection wire 243 are electrically connected via via 233d. The fourth connection wire 214 and the tenth connection wire 244 are electrically connected via via 234d. Furthermore, the fifth connection wire 215 and the eleventh connection wire 245 are electrically connected via via 235. The sixth connection wire 216 and the twelfth connection wire 246 are electrically connected via via 236.

[0088] Next, the first wiring 101c, 102c, the second wiring 103c, and the shield wiring 20c of the vibration device 1c will be described.

[0089] First, let me explain the first wiring 101c and 102c. As shown in Figures 8 and 11, in this embodiment, of the first wirings 101c and 102c, the first drive wiring 101c includes a first electrode terminal 63 located on the upper surface of the vibrator 4, a fifth connection wiring 215 located on the upper surface of the base 2c, a wire W2 that electrically connects the first electrode terminal 63 and the fifth connection wiring 215, an eleventh connection wiring 245 located between the layers of the first base substrate 201 and the second base substrate 202, and a via 235 that electrically connects the fifth connection wiring 215 and the eleventh connection wiring 245. Of the first wirings 101c and 102c, the second drive wiring 102c includes a second electrode terminal 64 located on the upper surface of the vibrator 4, a sixth connection wiring 216 located on the upper surface of the base 2c, a wire W3 that electrically connects the second electrode terminal 64 and the sixth connection wiring 216, a twelfth connection wiring 246 located between the layers of the first base substrate 201 and the second base substrate 202, and a via 236 that electrically connects the sixth connection wiring 216 and the twelfth connection wiring 246.

[0090] Next, I will explain the second wiring 103c. As shown in Figures 8 and 11, in this embodiment, the second wiring 103c includes a second external terminal 222 located on the lower surface of the base 2c, an eighth connecting wiring 242 located between the layers of the first base substrate 201 and the second base substrate 202, a via 232c that electrically connects the second external terminal 222 and the eighth connecting wiring 242, a second connecting wiring 212 located on the upper surface of the base 2c, and a via 232d that electrically connects the second connecting wiring 212 and the eighth connecting wiring 242.

[0091] Next, I will explain shielded wiring 20c. In this embodiment, the seventh connecting wire 241, which is positioned between the layers of the first base substrate 201 and the second base substrate 202, has the function of electrically connecting the first external terminal 221, which is the grounding terminal of the vibration device 1c, and the first connecting wire 211, which is positioned on the upper surface of the base 2c, as well as functioning as a shielding wire 20c connected to the ground potential.

[0092] As shown in Figures 9 and 10, in this embodiment, the seventh connecting wiring 241 as shield wiring 20c has a first partial wiring 241c extending in the X direction and a second partial wiring 241d extending in the Y direction. The second partial wiring 241d has a region that overlaps with the first connecting wiring 211 as shield wiring 20 in a plan view.

[0093] As shown in Figures 8 and 9, in this embodiment, the seventh connecting wire 241 as the shielding wire 20c is positioned, for example, between the eleventh connecting wire 245 and the twelfth connecting wire 246 of the first wires 101c and 102c, and the eighth connecting wire 242 of the second wire 103c. In other words, the seventh connecting wire 241, as shielded wire 20c, is positioned between at least a portion of the first wires 101c and 102c and at least a portion of the second wire 103c.

[0094] In this way, by arranging the seventh connecting wire 241 as shielding wire 20c between at least a portion of the first wires 101c, 102c and at least a portion of the second wire 103c, the difference between the parasitic capacitance between the first drive wire 101c and the second wire 103c and the parasitic capacitance between the second drive wire 102c and the second wire 103c can be reduced. As a result, the fluctuation of the output frequency in response to fluctuations in the power supply voltage becomes smaller, and a vibration device 1c with good frequency power supply characteristics can be provided.

[0095] In this embodiment, the vibration device 1c has shield wiring 20 in addition to shield wiring 20c, but shield wiring 20 may be omitted.

[0096] Furthermore, as shown in Figure 9, in this embodiment, in a plan view, the first partial wiring 241c of the seventh connecting wiring 241, which is a shield wiring 20c arranged between the layers of the first base substrate 201 and the second base substrate 202, is positioned on the positive Y-direction side with respect to the eighth connecting wiring 242, which is the second wiring 103c arranged between the layers of the first base substrate 201 and the second base substrate 202. The second partial wiring 241d of the seventh connecting wiring 241, which is a shield wiring 20c, is positioned on the negative X-direction side with respect to the eighth connecting wiring 242. In other words, the seventh connecting wiring 241, as a shield wiring 20c, has a first partial wiring 241c that is positioned on the positive Y-direction side with respect to the eighth connecting wiring 242 in a plan view, and a second partial wiring 241d that is positioned on the negative X-direction side with respect to the eighth connecting wiring 242. In other words, the seventh connecting wiring 241, which is a shield wiring 20c placed between the layers of the first base substrate 201 and the second base substrate 202, is positioned in two directions in a plan view: the first direction, the X direction, and the second direction, the Y direction, which intersects the X direction, with respect to the eighth connecting wiring 242, which is the second wiring 103c placed between the layers of the first base substrate 201 and the second base substrate 202.

[0097] In this way, by arranging the seventh connection wiring 241 as shield wiring 20c in the X and Y directions relative to the eighth connection wiring 242 in a plan view, the difference between the parasitic capacitance between the first drive wiring 101c and the second wiring 103c, and between the parasitic capacitance between the second drive wiring 102c and the second wiring 103c can be further reduced.

[0098] Furthermore, as shown in Figures 9 and 10, in this embodiment, of the seventh connecting wiring 241 as shield wiring 20c, the first partial wiring 241c extending in the X direction extends to the positive side of the base 2c in the X direction. And of the seventh connecting wiring 241 as shield wiring 20c, the second partial wiring 241d extending in the Y direction extends to the negative side of the base 2c in the Y direction.

[0099] In this way, by extending the seventh connecting wiring 241, which serves as shield wiring 20c, to the side of the base 2c, the difference between the parasitic capacitance between the first drive wiring 101c and the second wiring 103c, and between the parasitic capacitance between the second drive wiring 102c and the second wiring 103c can be further reduced.

[0100] Furthermore, as shown in Figures 10 and 12, in this embodiment, the second base substrate 202 is provided with vias 237 that penetrate between the upper and lower surfaces of the second base substrate 202. The vias 237 are through-electrodes formed by filling through-holes that penetrate the second base substrate 202 with a conductor.

[0101] Via 237 is positioned in a plan view to overlap with the seventh connection wiring 241, which is the shield wiring 20c. Via 237 is electrically connected to the seventh connection wiring 241 by joining it to the seventh connection wiring 241. In other words, Via 237 functions as the shield wiring 20c by being electrically connected to the seventh connection wiring 241, which is the shield wiring 20c.

[0102] In this way, by providing vias 237 that are electrically connected to the seventh connecting wiring 241, which is a shield wiring 20c arranged between the layers of the first base substrate 201 and the second base substrate 202, the difference between the parasitic capacitance between the first drive wiring 101c and the second wiring 103c, and the parasitic capacitance between the second drive wiring 102c and the second wiring 103c can be further reduced.

[0103] Furthermore, in this embodiment, via 237 is positioned to overlap with the first connecting wiring 211, which serves as the shield wiring 20, in a plan view. Via 237 is electrically connected to the first connecting wiring 211 by joining it to the first connecting wiring 211. In other words, the first connecting wiring 211 and the seventh connecting wiring 241 are electrically connected via via 237.

[0104] In this way, by electrically connecting the first connection wiring 211 as shield wiring 20 and the seventh connection wiring 241 as shield wiring 20c via via 237, the difference between the parasitic capacitance between the first drive wiring 101c and the second wiring 103c, and between the parasitic capacitance between the second drive wiring 102c and the second wiring 103c can be further reduced.

[0105] In this embodiment, via 237 is electrically connected to the first connecting wiring 211 as shield wiring 20, but it is not necessary for it to be electrically connected to the first connecting wiring 211. Also, in this embodiment, via 237 is provided on the second base substrate 202, but it is not necessary for it to be provided on the first base substrate 201. Furthermore, in this embodiment, four vias 237 are provided, but it is not necessary for vias 237 to be provided, and if vias 237 are provided, the number of vias 237 can be one or more.

[0106] As described above, according to this embodiment, the same effects as in Embodiment 1 can be obtained by making the base 2c a multilayer substrate having a first base substrate 201 and a second base substrate 202, and arranging the seventh connecting wiring 241 as shield wiring 20c between the layers of the first base substrate 201 and the second base substrate 202.

[0107] 5. Embodiment 5 Next, the vibration device 1d according to Embodiment 5 will be described with reference to Figures 13 to 15. Note that in Figure 14, the molded part M is omitted for the sake of explanation. The vibration device 1d of Embodiment 5 is the same as that of Embodiment 1, except that the semiconductor element 3 is arranged upside down and the semiconductor element 3 and the base 2 are electrically connected using the wire bonding method. Components identical to those in Embodiment 1 are denoted by the same reference numerals, and redundant explanations are omitted.

[0108] As shown in Figure 13, in this embodiment, the top and bottom of the semiconductor element 3 are reversed compared to Embodiment 1. More specifically, in this embodiment, the circuit section 32 is located on the upper surface of the semiconductor substrate 31. The upper surface of the semiconductor element 3 is the upper surface of the circuit section 32, and the lower surface of the semiconductor element 3 is the lower surface of the semiconductor substrate 31.

[0109] The upper surface of the semiconductor element 3 and the lower surface of the oscillator 4 are joined together via adhesive D1. The lower surface of the semiconductor element 3 and the upper surface of the base 2 are joined via adhesive D2. More specifically, the lower surface of the semiconductor element 3 and the first connecting wire 211, which serves as a shielding wire 20d and is located on the upper surface of the base 2, are joined via adhesive D2. The shielding wire 20d will be described later.

[0110] As shown in Figures 13 and 14, the upper surface of the semiconductor element 3 is arranged with a first connection terminal 321, a second connection terminal 322, a third connection terminal 323, a fourth connection terminal 324, a fifth connection terminal 325, and a sixth connection terminal 326.

[0111] As shown in Figures 14 and 15, the first connection wiring 211, the second connection wiring 212, the third connection wiring 213, and the fourth connection terminal 324 are arranged on the upper surface of the base 2.

[0112] As shown in Figures 13 and 14, the first connection terminal 321 and the first connection wiring 211 are electrically connected via a conductive wire W4. The second connection terminal 322 and the second connection wiring 212 are electrically connected via a conductive wire W5. The third connection terminal 323 and the third connection wiring 213 are electrically connected via a conductive wire W6. The fourth connection terminal 324 and the fourth connection wiring 214 are electrically connected via a conductive wire W7.

[0113] Furthermore, the fifth connection terminal 325 located on the upper surface of the semiconductor element 3 and the first electrode terminal 63 located on the upper surface of the resonator 4 are electrically connected via a conductive wire W8. The sixth connection terminal 326 located on the upper surface of the semiconductor element 3 and the second electrode terminal 64 located on the upper surface of the resonator 4 are electrically connected via a conductive wire W9.

[0114] Furthermore, the first connection terminal 321 located on the upper surface of the semiconductor element 3 and the third electrode terminal 65 located on the upper surface of the oscillator 4 are electrically connected via a conductive wire W10.

[0115] Next, the first wiring 101d, 102d, the second wiring 103d, and the shield wiring 20d of the vibration device 1d will be described.

[0116] First, let me explain the first wiring 101d and 102d. As shown in Figures 13 and 14, in this embodiment, of the first wirings 101d and 102d, the first drive wiring 101d has a first electrode terminal 63 located on the upper surface of the vibrator 4 and a wire W8 that electrically connects the first electrode terminal 63 and a fifth connection terminal 325 located on the upper surface of the semiconductor element 3. Of the first wirings 101d and 102d, the second drive wiring 102d has a second electrode terminal 64 located on the upper surface of the vibrator 4 and a wire W9 that electrically connects the second electrode terminal 64 and a sixth connection terminal 326 located on the upper surface of the semiconductor element 3.

[0117] Next, I will explain the second wiring 103d. As shown in Figures 13 and 14, in this embodiment, the second wiring 103d includes a second external terminal 222 located on the lower surface of the base 2, a second connecting wiring 212 located on the upper surface of the base 2, a via 232 that electrically connects the second external terminal 222 and the second connecting wiring 212, and a wire W5 that electrically connects the second connecting wiring 212 and the second connecting terminal 322 located on the upper surface of the semiconductor element 3.

[0118] Next, I will explain shielded wiring 20d. In this embodiment, the first connecting wire 211, which is positioned on the upper surface of the base 2, functions as a shield wire 20d.

[0119] As shown in Figures 14 and 15, the first connecting wire 211 has a region that overlaps with the semiconductor element 3 in a plan view. This region has approximately the same shape as the semiconductor element 3 in a plan view. The portion of the first connecting wire 211 that overlaps with the semiconductor element 3 in a plan view functions as a shielding wire 20d.

[0120] As shown in Figure 13, in this embodiment, the first connecting wire 211 as shielding wire 20d is positioned, for example, between the first electrode terminals 63 and 2 electrode terminals 64 of the first wires 101d and 102d and the second external terminal 222 of the second wire 103d. Alternatively, the first connecting wire 211 as shielding wire 20d is positioned, for example, between the wires W8 and W9 of the first wires 101d and 102d and the second external terminal 222 of the second wire 103d. In other words, the first connecting wire 211, which serves as the shielded wire 20d, is positioned between at least a portion of the first wires 101d and 102d and at least a portion of the second wire 103d.

[0121] In this way, by arranging the first connecting wiring 211 as shield wiring 20d between at least a portion of the first wirings 101d, 102d and at least a portion of the second wiring 103d, the difference between the parasitic capacitance between the first drive wiring 101d and the second wiring 103d and the parasitic capacitance between the second drive wiring 102d and the second wiring 103d can be reduced. As a result, the fluctuation of the output frequency in response to fluctuations in the power supply voltage becomes smaller, and a vibration device 1d with good frequency power supply characteristics can be provided.

[0122] As described above, according to this embodiment, even if the semiconductor element 3 and the base 2 are electrically connected using the wire bonding method, the same effects as in Embodiment 1 can be obtained by arranging the first connecting wire 211 as a shielding wire 20d between the first wirings 101d, 102d and the second wiring 103d.

[0123] The vibration devices 1 to 1d have been described above based on embodiments 1 to 5. However, the present invention is not limited thereto, and the configuration of each part can be replaced with any configuration having a similar function. Furthermore, other arbitrary components may be added to the present invention. Also, each embodiment may be combined as appropriate.

[0124] For example, the configuration of Embodiment 4 may be applied to Embodiments 1 to 3.

[0125] Furthermore, for example, the shield wiring 20-20d is connected to the ground potential, but it does not have to be connected to the ground potential. The shield wiring 20-20d may be maintained at a constant potential fixed at a certain potential other than the ground potential. [Explanation of Symbols]

[0126] 1, 1a, 1b, 1c, 1d... Vibration device, 2, 2c... Base, 3... Semiconductor element, 4... Oscillator, 5... Vibration element, 20, 20a, 20b, 20c, 20d... Shield wiring, 31... Semiconductor substrate, 32... Circuit section, 33... Oscillator circuit, 51... Vibration substrate, 61... Base, 62... Lid, 101, 101c, 101d... First drive wiring (first wiring), 102, 102c, 102d... Second drive wiring (first wiring), 103, 103c, 103d... Second wiring.

Claims

1. A vibration device in which a base, a semiconductor element having an oscillation circuit, and a vibrator having a first excitation electrode and a second excitation electrode are stacked in this order, A first wiring that electrically connects the first excitation electrode and the semiconductor element, A second first wiring that electrically connects the second excitation electrode and the semiconductor element, A second wiring that electrically connects the external output terminal located on the base and the semiconductor element, It has shielded wiring, The first portion of the shield wiring, at least a portion of the first first wiring, at least a portion of the second first wiring, and the first portion of the second wiring are arranged on the surface of the base facing the semiconductor element. The first portion of the shielded wiring is positioned between at least a portion of the first first wiring and the first portion of the second wiring, and between at least a portion of the second first wiring and the first portion of the second wiring. Vibration device.

2. The aforementioned base is a multilayer substrate, The second portion of the shield wiring is arranged between the layers of the multilayer substrate. The vibration device according to claim 1.

3. The second portion of the second wiring is arranged between the layers, The second portion of the second wiring comprises a first side along the first direction and a second side along the second direction intersecting the first direction, The second portion of the shielded wiring comprises a third side along the first side and a fourth side along the second side. The vibration device according to claim 2.

4. The second portion of the shielded wiring extends to the side of the base. The vibration device according to claim 3.

5. The second portion of the shielded wiring extends to the sides of the base in the first and second directions. The vibration device according to claim 4.

6. The shield wiring has a via that is electrically connected to the second portion of the shield wiring, A vibration device according to any one of claims 2 to 5.

7. The shielded wiring is positioned between the entirety of the first first wiring and the entirety of the second wiring, and between the entirety of the second first wiring and the entirety of the second wiring. The vibration device according to claim 1.

8. A vibration device in which a base, a semiconductor element having an oscillation circuit, and a vibrator having an excitation electrode are stacked in this order, A first wiring that electrically connects the excitation electrode and the semiconductor element, A second wiring that electrically connects the external output terminal located on the base and the semiconductor element, The system includes a shielded wiring positioned between at least a portion of the first wiring and at least a portion of the second wiring, The semiconductor element has a constant potential layer that is maintained at a constant potential, The shield wiring is the constant potential layer of the semiconductor element. Vibration device.

9. A vibration device in which a base, a semiconductor element having an oscillation circuit, and a vibrator having an excitation electrode are stacked in this order, A first wiring that electrically connects the excitation electrode and the semiconductor element, A second wiring that electrically connects the external output terminal located on the base and the semiconductor element, The system includes a shielded wiring positioned between at least a portion of the first wiring and at least a portion of the second wiring, The vibrator comprises a lid and a base that forms a housing space for housing a vibrating element between itself and the lid. The shield wiring is the lid of the vibrator. Vibration device.

10. The lid is electrically connected to the semiconductor element via a conductive adhesive. The vibration device according to claim 9.

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