Substrate processing apparatus and substrate processing method

Abstract

To provide a technique of improving the cleanliness of a substrate after supercritical drying.SOLUTION: A substrate processing apparatus comprises a liquid processing device, a supercritical drying device, a first load lock device, a dry cleaning device, and a control device. The liquid processing device forms a liquid film onto a front surface of a substrate. The supercritical drying device dries the substrate by replacing the liquid film with a supercritical fluid. The first load lock device switches a circumference atmosphere of the substrate in the middle of a conveyance path of the substrate from one of a normal pressure atmosphere and a reduced pressure atmosphere to the other one. The dry cleaning device performs a dry cleaning of the front surface of the substrate under a reduced pressure. The control device executes the formation of the liquid film by the liquid processing device, the drying of the substrate by the supercritical dryness device, the switching of the circumference atmosphere of the substrate by the first load lock device, and the dry cleaning of the substrate by the dry cleaning device in this order.SELECTED DRAWING: Figure 1

Description

Technical Field

[0004] , ,

[0005] , , , The substrate processing apparatus comprises a first block, a second block, a third block, and a transition apparatus. The first block includes a first mounting table supporting a first cassette for housing the substrate, a first transport chamber with an atmospheric pressure atmosphere, and a first transport apparatus for transporting the substrate in the first transport chamber. The second block includes the liquid processing apparatus, the supercritical drying apparatus, a second transport chamber with an atmospheric pressure atmosphere, and a second transport apparatus for transporting the substrate in the second transport chamber. The third block includes the dry cleaning apparatus, a third transport chamber with a reduced pressure atmosphere, and a third transport apparatus for transporting the substrate in the third transport chamber. The transition apparatus transfers the substrate between the first transport apparatus and the second transport apparatus. The second block and the third block are stacked vertically. The transition apparatus and the first load lock apparatus are stacked vertically. The transition apparatus is located between the first block and the second block. The first load lock device is provided between the first block and the third block.

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 describes a supercritical drying method. In the supercritical drying method, with a liquid adhering to the surface of a substrate, the substrate is exposed to a supercritical fluid for a certain period of time to dry the surface of the substrate. As the liquid, for example, alcohol or the like is used.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] One aspect of the present disclosure provides a technique for improving the cleanliness of a substrate after supercritical drying.

Means for Solving the Problems

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a liquid processing apparatus, a supercritical drying apparatus, a first load lock apparatus, a dry cleaning apparatus, and a control apparatus. The liquid processing apparatus forms a liquid film on the surface of the substrate. The supercritical drying apparatus dries the substrate by replacing the liquid film with a supercritical fluid. The first load lock apparatus switches the ambient atmosphere of the substrate from one of a normal pressure atmosphere and a reduced pressure atmosphere to the other in the middle of the conveyance path of the substrate. The dry cleaning apparatus dry - cleans the surface of the substrate under reduced pressure. The control apparatus performs, in this order, the formation of the liquid film by the liquid processing apparatus, the drying of the substrate by the supercritical drying apparatus, the switching of the ambient atmosphere of the substrate by the first load lock apparatus, and the dry cleaning of the substrate by the dry cleaning apparatus. The substrate processing apparatus comprises a first block, a second block, a third block, and a transition apparatus. The first block includes a first mounting table supporting a first cassette for housing the substrate, a first transport chamber with an atmospheric pressure atmosphere, and a first transport apparatus for transporting the substrate in the first transport chamber. The second block includes the liquid processing apparatus, the supercritical drying apparatus, a second transport chamber with an atmospheric pressure atmosphere, and a second transport apparatus for transporting the substrate in the second transport chamber. The third block includes the dry cleaning apparatus, a third transport chamber with a reduced pressure atmosphere, and a third transport apparatus for transporting the substrate in the third transport chamber. The transition apparatus transfers the substrate between the first transport apparatus and the second transport apparatus. The second block and the third block are stacked vertically. The transition apparatus and the first load lock apparatus are stacked vertically. The transition apparatus is located between the first block and the second block. The first load lock device is provided between the first block and the third block. [Effects of the Invention]

[0006] According to one aspect of this disclosure, the cleanliness of the substrate after supercritical drying can be improved. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a plan view showing a substrate processing apparatus according to one embodiment. [Figure 2] Figure 2 is a flowchart showing a substrate processing method according to one embodiment. [Figure 3] Figure 3(A) shows an example of step S101, Figure 3(B) shows an example of step S102, and Figure 3(C) shows an example of step S104. [Figure 4] Figure 4 is a plan view showing a substrate processing apparatus according to the first modified example. [Figure 5] Figure 5 is a plan view showing a substrate processing apparatus according to the second modified example. [Figure 6] Figure 6 is a plan view showing a substrate processing apparatus according to the third modified example. [Figure 7] Figure 7 is a plan view showing a substrate processing apparatus according to the fourth modified example. [Figure 8] Figure 8 is a front view showing a substrate processing apparatus according to the fourth modified example. [Figure 9] Figure 9 is a side view showing a substrate processing apparatus according to the fourth modified example. [Figure 10] Figure 10 is a plan view showing a substrate processing apparatus according to the fifth modified example. [Figure 11] Figure 11 is a plan view showing a substrate processing apparatus according to the sixth modified example. [Figure 12] Figure 12 is a side view showing a substrate processing apparatus according to the sixth modified example. [Modes for carrying out the invention]

[0008] Embodiments of this disclosure will be described below with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same reference numerals, and their descriptions may be omitted. The X-axis, Y-axis, and Z-axis directions are perpendicular to each other, the X-axis and Y-axis directions are horizontal, and the Z-axis direction is vertical.

[0009] In this specification, "atmospheric pressure" refers to a pressure of 80 kPa to 120 kPa, and "reduced pressure" refers to a pressure of 0 Pa to 1 kPa. The atmospheres of "atmospheric pressure atmosphere" and "reduced pressure atmosphere" may be an atmospheric atmosphere or an inert atmosphere. An inert atmosphere may contain nitrogen gas or a noble gas. An example of a noble gas is argon gas.

[0010] Referring to Figure 1, a substrate processing apparatus 1 according to one embodiment will be described. The substrate processing apparatus 1 comprises a liquid processing apparatus 51, a supercritical drying apparatus 52, a first load lock apparatus 53, a dry cleaning apparatus 54, and a control device 90. As shown in Figure 3(A), the liquid processing apparatus 51 forms a liquid film L on the surface Wa of the substrate W. As shown in Figure 3(B), the supercritical drying apparatus 52 dries the substrate W by replacing the liquid film L with a supercritical fluid S. As shown in Figure 3(B), the first load lock apparatus 53 switches the ambient atmosphere around the substrate W from an atmospheric pressure atmosphere to a reduced pressure atmosphere midway through the transport path of the substrate W. As shown in Figure 3(C), the dry cleaning apparatus 54 dry cleans the surface Wa of the substrate W under reduced pressure.

[0011] The control device 90 is, for example, a computer and comprises an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as memory. The storage unit 92 stores programs that control various processes performed in the substrate processing device 1. The control device 90 controls the operation of the substrate processing device 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92.

[0012] The control device 90 performs the formation of the liquid film L by the liquid processing device 51, the drying of the substrate W by the supercritical drying device 52, the switching of the ambient atmosphere of the substrate W by the first load lock device 53, and the dry cleaning of the substrate W by the dry cleaning device 54 in this order. By switching the ambient atmosphere of the substrate W by the first load lock device 53, the inside of the dry cleaning device 54 can be maintained in a reduced-pressure atmosphere, and the throughput of the substrate processing apparatus 1 can be improved. Further, the cleanliness of the substrate W after supercritical drying can be improved by the dry cleaning device 54.

[0013] The dry cleaning device 54 cleans the substrate W without wetting the substrate W with a liquid. Therefore, the liquid-gas interface does not appear in the uneven pattern on the surface Wa of the substrate W. As a result, the generation of surface tension can be prevented, and the collapse of the uneven pattern can be prevented. Although it is also possible to clean the substrate W with a wet cleaning device instead of the dry cleaning device 54, in that case, supercritical drying has to be performed again to prevent the collapse of the uneven pattern, and the throughput decreases.

[0014] As shown in FIG. 1, the substrate processing apparatus 1 includes, for example, a first block 10, a second block 20, a third block 30, a first load lock device 53, and a transition device 55. The first block 10, the transition device 55, the second block 20, the first load lock device 53, and the third block 30 are provided in a row in the horizontal direction in this order.

[0015] The first block 10 has a first stage 11, a first transfer chamber 12, and a first transfer device 13. The first stage 11 supports a first cassette C1 and a second cassette C2. The first cassette C1 houses a plurality of substrates W before processing. The substrate W includes, for example, a semiconductor substrate. The semiconductor substrate includes a silicon wafer or a compound semiconductor wafer. The substrate W may include a glass substrate instead of the semiconductor substrate. The surface Wa of the substrate W may have devices such as electronic circuits and may have an uneven pattern. The second cassette C2 houses a plurality of substrates W after processing.

[0016] The first transfer chamber 12 is provided between the first mounting table 11 and the transition device 55. The first transfer chamber 12 is in an atmospheric pressure atmosphere. The first transfer device 13 transfers the substrate W in the first transfer chamber 12. The first transfer device 13 takes out the substrate W before processing from the first cassette C1. Also, the first transfer device 13 stores the substrate W after processing in the second cassette C2. The first transfer device 13 has a transfer arm for holding the substrate W. The transfer arm is movable in the horizontal and vertical directions and is also rotatable around the vertical axis.

[0017] The second block 20 includes a liquid treatment device 51, a supercritical drying device 52, a second transfer chamber 22, and a second transfer device 23. The second transfer chamber 22 is provided between the transition device 55 and the first load lock device 53. The second transfer chamber 22 is in an atmospheric pressure atmosphere. The second transfer device 23 transfers the substrate W in the second transfer chamber 22. The second transfer device 23 transfers the substrate W between a plurality of devices adjacent to the second transfer chamber 22. The second transfer device 23 has a transfer arm for holding the substrate W. The transfer arm is movable in the horizontal and vertical directions and is also rotatable around the vertical axis.

[0018] In the second block 20, the liquid treatment device 51 and the supercritical drying device 52 are provided to face each other in the horizontal direction with the second transfer chamber 22 interposed therebetween. As shown in FIG. 12, in the second block 20, the liquid treatment device 51 and the supercritical drying device 52 may be provided stacked in the vertical direction on at least one side (both sides in FIG. 12) of the second transfer chamber 22. In the latter case, compared with the former case, when transferring the substrate W from the liquid treatment device 51 to the supercritical drying device 52, it is possible to suppress the collapse of the liquid film L (liquid spillage) due to the horizontal movement of the substrate W.

[0019] The third block 30 includes a dry cleaning device 54, a third transport chamber 32, and a third transport device 33. The third transport chamber 32 is in a reduced-pressure atmosphere. The third transport device 33 transports the substrate W in the third transport chamber 32. The third transport device 33 transports the substrate W between multiple devices adjacent to the third transport chamber 32. The third transport device 33 has a transport arm for holding the substrate W. The transport arm is movable in the horizontal and vertical directions and is rotatable around a vertical axis.

[0020] A transition device 55 is provided between the first block 10 and the second block 20. The transition device 55 is provided adjacent to the first transport chamber 12 and the second transport chamber 22, and transfers the substrate W between the first transport device 13 and the second transport device 23. Multiple transition devices 55 may be stacked vertically.

[0021] A first load lock device 53 is provided between the second block 20 and the third block 30. The first load lock device 53 is provided adjacent to the second transport chamber 22 and the third transport chamber 32, and transfers the substrate W between the second transport device 23 and the third transport device 33. Multiple first load lock devices 53 may be stacked vertically.

[0022] A substrate processing method according to one embodiment will be described with reference to Figures 1 to 3. The substrate processing method includes steps S101 to S105, as shown in Figure 2, for example. Steps S101 to S105 are performed under the control of the control device 90. The substrate processing method may also include steps other than steps S101 to S105.

[0023] First, a first cassette C1 containing multiple substrates W and an empty second cassette C2 are placed on the first mounting table 11 of the first block 10. Next, the first transport device 13 removes the substrates W from the first cassette C1 and transports them to the transition device 55. After that, the second transport device 23 removes the substrates W from the transition device 55 and transports them to the liquid processing device 51.

[0024] Next, the liquid processing apparatus 51 forms a liquid film L on the substrate surface Wa as shown in Figure 3(A) (step S101). The liquid processing apparatus 51 includes, for example, a spin chuck (not shown) that holds the substrate W horizontally with the substrate surface Wa facing upwards, and a nozzle 51a that supplies processing liquid to the substrate surface Wa. With the spin chuck rotating the substrate W, the nozzle 51a supplies processing liquid to the center of the substrate surface Wa. The processing liquid spreads over the entire substrate surface Wa by centrifugal force, and a liquid film L is formed over the entire substrate surface Wa. Multiple types of processing liquids may be supplied to the substrate surface Wa in sequence, and multiple types of liquid films L may be formed in sequence. After step S101, the second transport device 23 removes the substrate W from the liquid processing apparatus 51 and transports it to the supercritical drying apparatus 52.

[0025] Next, the supercritical drying apparatus 52 dries the substrate W by replacing the liquid film L with a supercritical fluid S, as shown in Figure 3(B) (step S102). The supercritical drying apparatus 52, although not shown, includes, for example, a pressure vessel for housing the substrate W, a supply line for supplying the supercritical fluid S to the pressure vessel, and a discharge line for discharging the supercritical fluid S from the pressure vessel. The supercritical fluid S is a fluid that has been subjected to a temperature above its critical temperature and a pressure above its critical pressure, and is in a state where it is impossible to distinguish between liquid and gas. By replacing the liquid film L with the supercritical fluid S, the appearance of a liquid-gas interface in the uneven pattern of the substrate W can be suppressed. As a result, the generation of surface tension can be suppressed, and the collapse of the uneven pattern can be suppressed. The liquid film L is, for example, an organic solvent such as IPA (isopropyl alcohol), and the supercritical fluid S is, for example, CO2. After step S102, the second transport device 23 removes the substrate W from the supercritical drying apparatus 52 and transports it to the first load lock device 53.

[0026] Next, the first load lock device 53 switches the ambient atmosphere around the substrate W from an atmospheric pressure atmosphere to a reduced pressure atmosphere (step S103). The first load lock device 53, although not shown, includes, for example, a processing container that forms a load lock chamber inside, and a pressure regulating mechanism that adjusts the pressure in the load lock chamber. A mounting platform for placing the substrate W is provided in the load lock chamber. The pressure regulating mechanism includes, for example, an exhaust mechanism that discharges gas from the load lock chamber and an air supply mechanism that supplies gas to the load lock chamber. The pressure regulating mechanism switches the atmosphere in the load lock chamber from an atmospheric pressure atmosphere to a reduced pressure atmosphere to the other. After step S103, the third transport device 33 removes the substrate W from the first load lock device 53 and transports it to the dry cleaning device 54.

[0027] Next, the dry cleaning apparatus 54 dry cleans the surface Wa of the substrate W under reduced pressure, as shown in Figure 3(C) (step S104). The dry cleaning apparatus 54 irradiates the substrate surface Wa with gas cluster GC under reduced pressure, for example. The gas cluster GC can penetrate into narrow recesses and remove particles P from inside the recesses. The dry cleaning apparatus 54 has, for example, a cleaning chamber 54a for housing the substrate W, and a nozzle 54b in the cleaning chamber 54a.

[0028] Nozzle 54b injects the source gas for the gas cluster GC. The source gas is cooled to its condensation temperature by adiabatic expansion in a pre-pressurized washing chamber 54a, forming a gas cluster GC, which is an aggregate of molecules or atoms. The source gas includes at least one selected from, for example, carbon dioxide (CO2) gas and argon (Ar) gas.

[0029] The nozzle 54b may inject a mixed gas of the source gas and carrier gas onto the substrate surface Wa. The carrier gas suppresses the liquefaction of the source gas inside the nozzle 54b by lowering its partial pressure. The carrier gas also increases the acceleration of the source gas, promoting the growth of gas cluster GCs. The carrier gas has a smaller molecular weight or atomic weight than the source gas. Therefore, the carrier gas has a higher condensation temperature than the source gas. Consequently, the carrier gas does not form gas cluster GCs. The carrier gas includes, for example, at least one selected from hydrogen (H2) gas and helium (He) gas.

[0030] The gas cluster GC collides with particles P attached to the substrate surface Wa, blowing them away. The gas cluster GC does not need to directly collide with the particles P. The gas cluster GC can also blow away particles P in the vicinity of the collision point. The gas cluster GC becomes hot due to the collision, so it breaks down into pieces and is exhausted from the exhaust port of the cleaning chamber 54a. The blown-away particles P are also discharged from the exhaust port of the cleaning chamber 54a.

[0031] The dry cleaning apparatus 54 irradiates the substrate surface Wa perpendicularly with gas cluster GC. Multiple devices are pre-formed on the substrate surface Wa, creating a pre-formed uneven pattern. Irradiating the substrate surface Wa perpendicularly with gas cluster GC suppresses the collapse of the uneven pattern due to collisions with gas cluster GC, and also removes particles P from inside the recesses.

[0032] After step S104, the third transport device 33 removes the substrate W from the dry cleaning device 54 and transports it to the first load lock device 53.

[0033] Next, the first load lock device 53 switches the ambient atmosphere around the substrate W from a reduced pressure atmosphere to an atmospheric pressure atmosphere (step S105). After step S105, the second transport device 23 removes the substrate W from the first load lock device 53 and transports it to the transition device 55. Then, the first transport device 13 removes the substrate W from the transition device 55 and stores it in the second cassette C2. This completes the series of processes.

[0034] According to this embodiment, as shown in Figure 1, the first block 10, the transition device 55, the second block 20, the first load lock device 53, and the third block 30 are arranged in a horizontal line in this order. Since both the first transport chamber 12 and the second transport chamber 22 are under normal atmospheric pressure, a simpler and less expensive transition device 55 can be used instead of a load lock device. Furthermore, if the cleanliness of the substrate W is high after supercritical drying and dry cleaning is unnecessary, the substrate W can be stored in the second cassette C2 without being transported to the third block 30. When dry cleaning is unnecessary, the transport path of the substrate W can be shortened, and the throughput of the substrate processing apparatus 1 can be improved.

[0035] Next, with reference to Figure 4, a substrate processing apparatus 1 according to the first modified example will be described. The differences from the above embodiment will be mainly described below. As shown in Figure 4, the first block 10, the second load lock device 56, the third block 30, the first load lock device 53, and the second block 20 are arranged in a horizontal line in this order.

[0036] The second load lock device 56 is configured similarly to the first load lock device 53 and switches the ambient atmosphere surrounding the substrate W from an atmospheric pressure atmosphere to a reduced pressure atmosphere midway through the transport path of the substrate W. The second load lock device 56 is installed adjacent to the first transport chamber 12, which is in an atmospheric pressure atmosphere, and the third transport chamber 32, which is in a reduced pressure atmosphere.

[0037] The operation of the substrate processing apparatus 1 in this modified example is as follows. First, the first transport device 13 takes the substrate W from the first cassette C1 and transports it to the second load lock device 56. Next, the second load lock device 56 switches the ambient atmosphere around the substrate W from an atmospheric atmosphere to a reduced pressure atmosphere. After that, the third transport device 33 takes the substrate W from the second load lock device 56 and transports it to the first load lock device 53. After that, the first load lock device 53 switches the ambient atmosphere around the substrate W from a reduced pressure atmosphere to an atmospheric pressure atmosphere. Next, the second transport device 23 takes the substrate W from the first load lock device 53 and transports it to the liquid processing apparatus 51.

[0038] Next, the liquid processing device 51 forms a liquid film L on the substrate surface Wa as shown in Figure 3(A) (step S101). After step S101, the second transport device 23 removes the substrate W from the liquid processing device 51 and transports it to the supercritical drying device 52. Next, the supercritical drying device 52 dries the substrate W by replacing the liquid film L with supercritical fluid S as shown in Figure 3(B) (step S102). After step S102, the second transport device 23 removes the substrate W from the supercritical drying device 52 and transports it to the first load lock device 53.

[0039] Next, the first load lock device 53 switches the surrounding atmosphere of the substrate W from an atmospheric pressure atmosphere to a reduced pressure atmosphere (step S103). After step S103, the third transport device 33 removes the substrate W from the first load lock device 53 and transports it to the dry cleaning device 54. Next, the dry cleaning device 54 dry cleans the surface Wa of the substrate W under reduced pressure, as shown in Figure 3(C) (step S104).

[0040] After step S104, the third transport device 33 removes the substrate W from the dry cleaning device 54 and transports it to the second load lock device 56. Next, the second load lock device 56 switches the ambient atmosphere around the substrate W from a reduced pressure atmosphere to an atmospheric pressure atmosphere. After that, the first transport device 13 removes the substrate W from the second load lock device 56 and stores it in the second cassette C2. This completes the series of processes.

[0041] In this modified example, the distance between the first block 10 and the third block 30 is shorter compared to the above embodiment. Therefore, the substrate W can be transported from the dry cleaning device 54 to the second cassette C2 in a short time after dry cleaning. Thus, it is possible to suppress the adhesion of particles to the substrate W during transport after dry cleaning.

[0042] Next, with reference to Figure 5, a substrate processing apparatus 1 according to the second modified example will be described. The differences from the first modified example described above will be explained below. The third block 30 of this modified example has an etching apparatus 57 in addition to a dry cleaning apparatus 54, a third transport chamber 32, and a third transport apparatus 33. The etching apparatus 57 etches the substrate surface Wa under reduced pressure.

[0043] The operation of the substrate processing apparatus 1 in this modified example is as follows: First, the first transport device 13 takes the substrate W from the first cassette C1 and transports it to the second load lock device 56. Next, the second load lock device 56 switches the surrounding atmosphere of the substrate W from an atmospheric atmosphere to a reduced-pressure atmosphere. After that, the third transport device 33 takes the substrate W from the second load lock device 56 and transports it to the etching apparatus 57.

[0044] Next, the etching apparatus 57 etches the substrate surface Wa under reduced pressure. The purpose of etching the substrate surface Wa is not particularly limited, but may include, for example, the removal of unwanted films, the creation of uneven patterns, or surface modification. The etching apparatus 57 is, for example, a plasma etching apparatus. After that, the third transport apparatus 33 removes the substrate W from the etching apparatus 57 and transports it to the first load lock apparatus 53. The subsequent processing is the same as in the first modified example described above, so the explanation is omitted.

[0045] The etching apparatus 57 can also be used in the above embodiment or the following modified examples.

[0046] Next, with reference to Figure 6, a substrate processing apparatus 1 according to the third modified example will be described. The differences between the above embodiment and the above modified example will be mainly described below. As shown in Figure 6, the first block 10, the transition device 55, the second block 20, the first load lock device 53, the third block 30, the second load lock device 56, and the fourth block 40 are arranged in a horizontal line in this order.

[0047] The first block 10 includes a first mounting table 11, a first transport chamber 12, and a first transport device 13. The first mounting table 11 supports the first cassette C1, but unlike the above embodiment and modified example, it does not support the second cassette C2. The first cassette C1 contains multiple substrates W before processing. On the other hand, the second cassette C2 contains multiple substrates W after processing.

[0048] The fourth block 40 includes a second mounting table 41, a fourth transport chamber 42, and a fourth transport device 43. The second mounting table 41 supports the second cassette C2. The fourth transport chamber 42 is located between the second mounting table 41 and the second load lock device 56. The fourth transport chamber 42 is in an atmospheric pressure environment. The fourth transport device 43 is configured similarly to the first transport device 13 and transports the substrate W in the fourth transport chamber 42.

[0049] The operation of the substrate processing apparatus 1 in this modified example is as follows. Note that the operation from step S101 to step S104 is the same as in the above embodiment, so the explanation is omitted. After step S104, the third transport device 33 removes the substrate W from the dry cleaning device 54 and transports it to the second load lock device 56. Next, the second load lock device 56 switches the surrounding atmosphere of the substrate W from a reduced pressure atmosphere to an atmospheric pressure atmosphere. After that, the fourth transport device 43 removes the substrate W from the second load lock device 56 and stores it in the second cassette C2. This completes the series of processes.

[0050] According to this modified version, the transport path of the substrate W from the first cassette C1 to the second cassette C2 is shorter compared to the above embodiment and modified version. Therefore, the throughput of the substrate processing apparatus 1 can be improved. Also, according to this modified version, similar to the first and second modified versions, the distance between the second cassette C2 and the third block 30 is shorter compared to the above embodiment. Therefore, the substrate W can be transported from the dry cleaning apparatus 54 to the second cassette C2 in a short time after dry cleaning. Thus, it is possible to suppress the adhesion of particles to the substrate W during transport after dry cleaning.

[0051] Next, with reference to Figures 7 to 9, a substrate processing apparatus 1 according to the fourth modified example will be described. Below, the differences between the above embodiment and the above modified example will be mainly described. As shown in Figure 8, the second block 20 and the third block 30 are stacked vertically. The arrangement of the second block 20 and the third block 30 may be reversed, and either one may be on top or the other on the bottom. Also, the transition device 55 and the first load lock device 53 are stacked vertically. The arrangement of the transition device 55 and the first load lock device 53 may be reversed, and either one may be on top or the other on the bottom. The transition device 55 is provided between the first block 10 and the second block 20. Also, the first load lock device 53 is provided between the first block 10 and the third block 30.

[0052] The operation of the substrate processing apparatus 1 in this modified example is as follows. Note that the operation from step S101 to step S102 is the same as in the above embodiment, so the explanation is omitted. After step S102, the second transport device 23 takes the substrate W from the supercritical drying apparatus 52 and transports it to the transition device 55. Then, the first transport device 13 takes the substrate W from the transition device 55 and transports it to the first load lock device 53.

[0053] Next, the first load lock device 53 switches the surrounding atmosphere of the substrate W from an atmospheric pressure atmosphere to a reduced pressure atmosphere (step S103). After step S103, the third transport device 33 removes the substrate W from the first load lock device 53 and transports it to the dry cleaning device 54. Next, the dry cleaning device 54 dry cleans the surface Wa of the substrate W under reduced pressure, as shown in Figure 3(C) (step S104).

[0054] After step S104, the third transport device 33 removes the substrate W from the dry cleaning device 54 and transports it to the first load lock device 53. Next, the first load lock device 53 switches the ambient atmosphere around the substrate W from a reduced pressure atmosphere to an atmospheric pressure atmosphere. After that, the first transport device 13 removes the substrate W from the first load lock device 53 and stores it in the second cassette C2. This completes the series of processes.

[0055] In this modified configuration, the second block 20 and the third block 30 are stacked vertically, and the transition device 55 and the first load lock device 53 are also stacked vertically. Therefore, the footprint (installation area) of the substrate processing device 1 can be reduced. Furthermore, in this modified configuration, when processing the substrate W using only one of the second block 20 or the third block 30, the substrate W can be stored in the second cassette C2 without transporting it to the other. In both cases, whether processing the substrate W using only the second block 20 or only the third block 30, the transport path of the substrate W can be shortened, and the throughput of the substrate processing device 1 can be improved.

[0056] Next, with reference to Figure 10, a substrate processing apparatus 1 according to the fifth modified example will be described. The differences between this embodiment and the modified example described above will be explained below. As shown in Figure 10, the third block 30 may have a third load lock device 58. The third load lock device 58 is configured in the same way as the first load lock device 53.

[0057] The third load lock device 58 switches the degree of vacuum in the peripheral atmosphere of the substrate W between the third transfer chamber 32 and the dry cleaning device 54. The degree of vacuum is represented by the differential pressure with respect to the normal pressure. The greater the magnitude of the differential pressure, the greater the degree of vacuum. The pressure in the third transfer chamber 32 is lower than the normal pressure and higher than the pressure in the cleaning chamber 54a (see FIG. 3(C)) of the dry cleaning device 54.

[0058] The operation of the substrate processing apparatus 1 of this modification is as follows. The operations from step S101 to step S103 are the same as those in the above embodiment, and thus the description thereof is omitted. After step S103, the third transfer device 33 takes out the substrate W from the first load lock device 53 and transfers it to the third load lock device 58.

[0059] Next, the third load lock device 58 reduces the pressure in the peripheral atmosphere of the substrate W from the first pressure P1 to the second pressure P2 (P2 < P1). The first pressure P1 is equal to the pressure in the third transfer chamber 32. The second pressure P2 is equal to the pressure in the cleaning chamber 54a.

[0060] Next, an internal transfer arm (not shown) takes out the substrate W from the load lock chamber of the third load lock device 58 and transfers it to the dry cleaning device 54. The internal transfer arm is, for example, a part of the third load lock device 58, waits inside the load lock chamber, and takes out the substrate W from the load lock chamber or transfers the substrate W into the load lock chamber.

[0061] Next, as shown in FIG. 3(C), the dry cleaning device 54 dry-cleans the surface Wa of the substrate W under reduced pressure (step S104). After step S104, an internal transfer arm (not shown) takes out the substrate W from the dry cleaning device 54 and transfers it to the load lock chamber of the third load lock device 58.

[0062] Next, the third load lock device 58 increases the pressure of the peripheral atmosphere of the substrate W from the second pressure P2 to the first pressure P1 (P2 < P1). Thereafter, the third transfer device 33 takes out the substrate W from the third load lock device 58 and transfers it to the first load lock device 53. Since the subsequent processing is the same as that in the above embodiment, the description thereof is omitted.

[0063] According to this modification, the third load lock device 58 switches the degree of decompression of the peripheral atmosphere of the substrate W between the third transfer chamber 32 and the dry cleaning device 54. Therefore, the pressure in the third transfer chamber 32 can be maintained lower than the atmospheric pressure and higher than the pressure in the cleaning chamber 54a of the dry cleaning device 54. The volume of the third transfer chamber 32 is larger than the volume of the cleaning chamber 54a. By setting the pressure in the third transfer chamber 32 with a large volume relatively high, the load on the vacuum pump can be reduced.

[0064] Note that the third load lock device 58 can also be used in the above embodiment or the above modification. Also, as shown in FIG. 10, the third load lock device 58 may be provided individually for each dry cleaning device 54, or may be provided adjacent to a plurality of dry cleaning devices 54. In the latter case, the number of the third load lock devices 58 can be reduced.

[0065] Next, referring to FIGS. 11 to 12, the substrate processing apparatus 1 according to the sixth modification will be described. Hereinafter, the differences from the above embodiment and the above modification will be mainly described. As shown in FIG. 11, the third block 30 may not be provided, and the second block 20 may have the liquid processing device 51, the supercritical drying device 52 (see FIG. 12), the first load lock device 53, the dry cleaning device 54, the second transfer chamber 22, and the second transfer device 23.

[0066] The liquid processing apparatus 51, the supercritical drying apparatus 52, and the first load lock apparatus 53 are provided adjacent to the second transport chamber 22. The second transport chamber 22 is under normal atmospheric pressure. Therefore, the dry cleaning apparatus 54 is provided adjacent to the first load lock apparatus 53. The first load lock apparatus 53 switches the ambient atmosphere around the substrate W from a normal atmospheric pressure atmosphere to a reduced pressure atmosphere midway through the transport path of the substrate W. The first load lock apparatus 53 may be provided individually for each dry cleaning apparatus 54 as shown in Figure 11, or it may be provided adjacent to multiple dry cleaning apparatuses 54. In the latter case, the number of first load lock apparatuses 53 can be reduced.

[0067] The operation of the substrate processing apparatus 1 in this modified example is as follows. Note that the operation from step S101 to step S103 is the same as in the above embodiment, so the explanation is omitted. After step S103, an internal transport arm (not shown) takes the substrate W out of the load lock chamber of the first load lock device 53 and transports it to the dry cleaning device 54. The internal transport arm is, for example, part of the first load lock device 53 and is waiting inside the load lock chamber, and is responsible for transporting the substrate W out of the load lock chamber and transporting the substrate W into the load lock chamber.

[0068] Next, the dry cleaning device 54 dry cleans the surface Wa of the substrate W under reduced pressure, as shown in Figure 3(C) (step S104). After step S104, an internal transport arm (not shown) removes the substrate W from the dry cleaning device 54 and transports it to the load lock chamber of the first load lock device 53. The subsequent processing is the same as in the above embodiment, so the explanation is omitted.

[0069] According to this modified example, the second block 20 includes a liquid processing apparatus 51, a supercritical drying apparatus 52, a first load lock apparatus 53, a dry cleaning apparatus 54, a second transport chamber 22, and a second transport apparatus 23. Since there is no third block 30, the structure of the substrate processing apparatus 1 can be simplified.

[0070] The embodiments of the substrate processing apparatus and substrate processing method described above have been explained, but this disclosure is not limited to the embodiments described above. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These also naturally fall within the technical scope of this disclosure. [Explanation of Symbols]

[0071] 1. Substrate processing apparatus 51 Liquid treatment equipment 52 Supercritical drying equipment 53. First Load Lock Device 54 Dry cleaning equipment 90 Control device

Claims

1. A liquid processing apparatus for forming a liquid film on the surface of a substrate, A supercritical drying apparatus that dries the substrate by replacing the liquid film with a supercritical fluid, A first load lock device that switches the ambient atmosphere surrounding the substrate from an atmospheric pressure atmosphere to a reduced pressure atmosphere midway through the transport path of the substrate, A dry cleaning apparatus for dry cleaning the surface of the substrate under reduced pressure, A control device that performs, in this order, the formation of the liquid film by the liquid processing apparatus, the drying of the substrate by the supercritical drying apparatus, the switching of the ambient atmosphere around the substrate by the first load lock apparatus, and the dry cleaning of the substrate by the dry cleaning apparatus. Equipped with, A first block comprising: a first mounting table supporting a first cassette containing the substrate; a first transport chamber in an atmospheric pressure environment; and a first transport device for transporting the substrate in the first transport chamber; A second block comprising the liquid processing apparatus, the supercritical drying apparatus, a second transport chamber with an atmospheric pressure environment, and a second transport apparatus for transporting the substrate in the second transport chamber, A third block comprising the dry cleaning apparatus, a third transport chamber with a reduced pressure atmosphere, and a third transport apparatus for transporting the substrate in the third transport chamber, A transition device for transferring the substrate between the first transport device and the second transport device, Equipped with, A substrate processing apparatus wherein the second block and the third block are stacked vertically, the transition device and the first load lock device are stacked vertically, the transition device is provided between the first block and the second block, and the first load lock device is provided between the first block and the third block.

2. The substrate processing apparatus according to claim 1, wherein in the second block, the liquid processing apparatus and the supercritical drying apparatus are arranged facing each other horizontally with the second transport chamber in between.

3. The substrate processing apparatus according to claim 1, wherein in the second block, the liquid processing apparatus and the supercritical drying apparatus are stacked vertically on at least one side of the second transport chamber.

4. The substrate processing apparatus according to claim 1, wherein the third block comprises an etching apparatus for etching the surface of the substrate under reduced pressure.

5. A liquid processing apparatus for forming a liquid film on the surface of a substrate, A supercritical drying apparatus that dries the substrate by replacing the liquid film with a supercritical fluid, A first load lock device that switches the ambient atmosphere surrounding the substrate from an atmospheric pressure atmosphere to a reduced pressure atmosphere midway through the transport path of the substrate, A dry cleaning apparatus for dry cleaning the surface of the substrate under reduced pressure, A control device that performs, in this order, the formation of the liquid film by the liquid processing apparatus, the drying of the substrate by the supercritical drying apparatus, the switching of the ambient atmosphere around the substrate by the first load lock apparatus, and the dry cleaning of the substrate by the dry cleaning apparatus. Equipped with, The third block comprises the dry cleaning apparatus, a third transport chamber having a reduced pressure atmosphere, a third transport apparatus for transporting the substrate in the third transport chamber, and a third load lock apparatus for switching the degree of reduced pressure of the ambient atmosphere around the substrate between the third transport chamber and the dry cleaning apparatus. A substrate processing apparatus comprising a dry cleaning apparatus having a cleaning chamber for housing the substrate, wherein the pressure in the third transport chamber is lower than atmospheric pressure and higher than the pressure in the cleaning chamber.

6. A first block comprising: a first mounting table supporting a cassette containing the substrate; a first transport chamber in an atmospheric pressure environment; and a first transport device for transporting the substrate in the first transport chamber; A second block comprising the liquid processing apparatus, the supercritical drying apparatus, a second transport chamber with an atmospheric pressure environment, and a second transport apparatus for transporting the substrate in the second transport chamber, A transition device for transferring the substrate between the first transport device and the second transport device, Equipped with, The substrate processing apparatus according to claim 5, wherein the first block, the transition device, the second block, the first load lock device, and the third block are arranged in a horizontal line in this order.

7. A first block comprising: a first mounting table supporting a cassette containing the substrate; a first transport chamber in an atmospheric pressure environment; and a first transport device for transporting the substrate in the first transport chamber; A second block comprising the liquid processing apparatus, the supercritical drying apparatus, a second transport chamber with an atmospheric pressure environment, and a second transport apparatus for transporting the substrate in the second transport chamber, A second load lock device that switches the ambient atmosphere surrounding the substrate from an atmospheric pressure atmosphere to a reduced pressure atmosphere midway through the transport path of the substrate, Equipped with, The substrate processing apparatus according to claim 5, wherein the first block, the second load lock device, the third block, the first load lock device, and the second block are arranged in a horizontal line in this order.

8. A first block comprising: a first mounting table supporting a first cassette containing the substrate; a first transport chamber in an atmospheric pressure environment; and a first transport device for transporting the substrate in the first transport chamber; A second block comprising the liquid processing apparatus, the supercritical drying apparatus, a second transport chamber with an atmospheric pressure environment, and a second transport apparatus for transporting the substrate in the second transport chamber, A fourth block comprising: a second mounting table supporting a second cassette containing the substrate; a fourth transport chamber in an atmospheric pressure environment; and a fourth transport device for transporting the substrate in the fourth transport chamber; A transition device for transferring the substrate between the first transport device and the second transport device, A second load lock device that switches the ambient atmosphere surrounding the substrate from an atmospheric pressure atmosphere to a reduced pressure atmosphere midway through the transport path of the substrate, Equipped with, The substrate processing apparatus according to claim 5, wherein the first block, the transition device, the second block, the first load lock device, the third block, the second load lock device, and the fourth block are arranged in a horizontal line in this order.

9. A first block comprising: a first mounting table supporting a first cassette containing the substrate; a first transport chamber in an atmospheric pressure environment; and a first transport device for transporting the substrate in the first transport chamber; A second block comprising the liquid processing apparatus, the supercritical drying apparatus, a second transport chamber with an atmospheric pressure environment, and a second transport apparatus for transporting the substrate in the second transport chamber, A transition device for transferring the substrate between the first transport device and the second transport device, Equipped with, The substrate processing apparatus according to claim 5, wherein the second block and the third block are stacked vertically, the transition device and the first load lock device are stacked vertically, the transition device is provided between the first block and the second block, and the first load lock device is provided between the first block and the third block.

10. The second block comprises the liquid processing apparatus, the supercritical drying apparatus, a second transport chamber with an atmospheric pressure environment, and a second transport device for transporting the substrate in the second transport chamber. The substrate processing apparatus according to claim 5, wherein in the second block, the liquid processing apparatus and the supercritical drying apparatus are arranged facing each other horizontally, with the second transport chamber in between.

11. The second block comprises the liquid processing apparatus, the supercritical drying apparatus, a second transport chamber with an atmospheric pressure environment, and a second transport device for transporting the substrate in the second transport chamber. The substrate processing apparatus according to claim 5, wherein in the second block, the liquid processing apparatus and the supercritical drying apparatus are stacked vertically on at least one side of the second transport chamber.

12. The substrate processing apparatus according to claim 5, wherein the third block comprises an etching apparatus for etching the surface of the substrate under reduced pressure.

13. A substrate processing method comprising processing a substrate using a substrate processing apparatus described in any one of claims 1 to 12.

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