Display devices, display modules, and electronic devices

The display device design with specific light-emitting devices and layered structures addresses the challenges of high resolution, brightness, and reliability, enhancing extended reality applications with improved performance and reduced power consumption.

JP7884530B2Active Publication Date: 2026-07-03SEMICON ENERGY LAB CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2022-09-16
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Existing display devices struggle to achieve high resolution, high brightness, high contrast, and high reliability, particularly in applications requiring enhanced immersion and realism such as virtual, augmented, and mixed reality systems.

Method used

A display device design incorporating first and second light-emitting devices with insulating and filling layers, a colored layer, and a reflective layer, utilizing inorganic semiconductor materials and organic materials to enhance structural integrity and reduce step differences, enabling high aperture ratios and efficient light emission.

Benefits of technology

The solution results in a display device with high resolution, high brightness, high contrast, and improved reliability, supporting applications in extended reality systems with reduced power consumption and weight.

✦ Generated by Eureka AI based on patent content.

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Abstract

Provided is a display apparatus having high display quality. This display apparatus has a first light-emitting device, a second light-emitting device, a first insulating layer, and a filler layer. The first light-emitting device has a first electrode, a first semiconductor layer on the first electrode, and a shared electrode on the first semiconductor layer. The second light-emitting device has a second electrode, a second semiconductor layer on the second electrode, and the shared electrode on the second semiconductor layer. The first insulating layer has a region that is in contact with a side surface of the first semiconductor layer and a side surface of the second semiconductor layer. The filler layer has a region that overlaps with the side surface of the first semiconductor layer and the side surface of the second semiconductor layer, with the first insulating layer therebetween. The shared electrode has a region that is in contact with the top surface of the filler layer.
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