Resist underlayer film forming composition containing reaction products of a trifunctional compound
The resist underlayer film forming composition addresses adhesion and uniformity issues in EUV and EB lithography by using specific compound reactions, enhancing coatability and sensitivity, and reducing defects in semiconductor manufacturing.
JP7885688B2Active Publication Date: 2026-07-07NISSAN CHEM CORP
Patent Information
- Application Number
- JP2022555518
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2020-10-07
- Filing Date
- 2021-10-06
- Publication Date
- 2026-07-07
- Estimated Expiration
- 2041-10-06
Smart Images
Figure 0007885688000001 
Figure 0007885688000002 
Figure 0007885688000003
Abstract
The present invention provides: a composition for forming a resist underlayer film that enables formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, which each use said resist underlayer film-forming composition. This resist underlayer film-forming composition contains a reaction product obtained from: a compound (A) that is dissolved in a solvent and that is represented by formula (1) (in formula (1), A represents an organic group including an aliphatic ring, an aromatic ring, or a heterocyclic ring); a compound (B) having two functional groups that are reactive with respect to an epoxy group; and a compound (C) having one functional group that is reactive with respect to an epoxy group.
Need to check novelty before this filing date? Find Prior Art
Citation Information
Patent Citations
Composition for formation of antireflection film containing reaction product of isocyanuric acid compound and benzoic acid compound
JP2005321752A
Composition for forming antireflection film for lithography
WO2002086624A1
Resist underlayer film formation composition having disulfide structure
WO2019151471A1