Substrate processing apparatus and substrate processing method

Abstract

To provide a wafer processing device capable of preventing adverse influences, derived from a water repellent agent, upon a wafer.SOLUTION: In a wafer processing device 1, when applying water repellent processing to a wafer W, water repellent agent vapor supplied toward a processing tank 11 positioned in a chamber 3 is collected by an opening 12a in an upper part of the processing tank 11. In such a configuration, the water repellent agent vapor is prevented from sneaking to a sidewall of the chamber 3, and a water repellent agent residue is prevented from being deposited on the sidewall of the chamber 3. Thus, it is possible to provide the wafer processing device 1 which is capable of keeping cleanness of the wafer W while preventing the water repellent agent residue from exerting adverse influences on the wafer W.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing on various substrates such as semiconductor substrates, substrates for flat panel displays (FPDs) such as liquid crystal displays and organic EL (Electroluminescence) display devices, glass substrates for photomasks, and substrates for optical discs.

Background Art

[0002] Patent Document 1 discloses a substrate processing method for processing a substrate housed in a chamber. The substrate processing method includes a tank for immersing the substrate in a predetermined liquid, a discharge port for supplying an inert gas, an organic solvent vapor, and a water repellent agent vapor into the chamber, and a decompression unit for decompressing the inside of the chamber. According to the disclosure of Patent Document 1, the water repellent agent vapor is supplied into the chamber while performing decompression. In this way, the surface of the substrate is modified. The residue of the water repellent agent adhering to the substrate surface due to the supply of the water repellent agent vapor is removed by immersing the substrate in a diluted organic solvent in a later process, and the configuration does not adversely affect the substrate.

[0003] Patent Document 2 also discloses a substrate processing method similar to that of Patent Document 1. The substrate processing method of Patent Document 2 also includes a process of supplying the water repellent agent vapor while decompressing the inside of the chamber. The effect of supplying the water repellent agent while performing decompression is that it becomes easy to supply the water repellent agent into the chamber in a vapor state.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, the above configuration has a problem in that it cannot adequately prevent the adverse effects of the water-repellent agent on the substrate. Specifically, when the water-repellent agent vapor is supplied into the chamber, the water-repellent agent residue adheres not only to the substrate surface but also to the inner wall of the chamber. Even on the inner wall of the chamber, the part at the bottom of the chamber is below the liquid level of the diluted organic solvent when it is accumulated in the chamber. Therefore, the water-repellent agent residue adhering to this part is removed. However, the water-repellent agent residue remains on other parts of the inner wall of the chamber, and this can adversely affect the substrate.

[0006] The present invention has been made in view of these circumstances, and aims to provide a substrate processing apparatus and a substrate processing method that can prevent adverse effects on the substrate caused by water-repellent agents. [Means for solving the problem]

[0007] To achieve this objective, the present invention has the following configuration.

[0008] A substrate processing apparatus for performing water-repellent treatment, cleaning treatment, and drying treatment on multiple substrates in succession, comprising: a sealable chamber; a processing tank provided inside the chamber and having an open top for storing cleaning liquid; a lifter for holding multiple substrates and moving up and down between an internal position and an upper position of the processing tank; a drainage means for draining the cleaning liquid stored in the processing tank; a processing tank depressurization means for depressurizing the inside of the processing tank to exhaust the chamber; and a water-repellent agent supply means for supplying a water-repellent agent to substrates located above the processing tank. The through hole provided in the processing tank, The system comprises control means for controlling a series of processes on the plurality of substrates, wherein during the process of water-repellent treatment of the plurality of substrates, the control means drains the treatment liquid in the treatment tank using the drainage means, and subsequently uses the treatment tank depressurization means Through the aforementioned through hole A substrate processing apparatus characterized by supplying a water-repellent agent to a substrate located above the processing tank by the water-repellent agent supply means while exhausting the chamber by reducing the pressure inside the processing tank.

[0009] [Operation and Effects] In the substrate processing apparatus described in (1) above, during the process of applying a water-repellent treatment to multiple substrates, the processing liquid in the processing tank is drained by a drainage means to empty the processing tank, and then the pressure inside the processing tank is reduced by a processing tank depressurization means, thereby exhausting the chamber while supplying water-repellent vapor to the substrates located above the processing tank by a water-repellent supply means. In other words, the water-repellent vapor in the substrate processing apparatus according to the present invention flows along with the flow of atmosphere that passes through the opening of the processing tank and reaches the inside of the processing tank. With this configuration, when the water-repellent vapor is supplied into the chamber, the adhesion of water-repellent residue to the inner wall of the chamber is reduced. This is because the water-repellent vapor is collected in the processing tank and cannot circulate into the space between the outer wall of the processing tank and the inner wall of the chamber. According to the present invention, the residue of water-repellent residue remaining in the chamber and adversely affecting the substrates is reduced.

[0010] The present invention also has the following features.

[0011] (2) The substrate processing apparatus described in (1), wherein the processing tank depressurization means comprises an exhaust port formed in the processing tank, a pipe with one end connected to the exhaust port, an on-off valve interposed in the pipe, and a depressurization pump connected to the other end of the pipe, and the control means, when supplying a water-repellent agent to a substrate located above the processing tank by the water-repellent agent supply means, opens the on-off valve while depressurizing with the depressurization pump, and discharges the water-repellent agent collected in the processing tank from the upper opening of the processing tank through the exhaust port.

[0012] [Effects] (2) By providing an exhaust port in the treatment tank that allows the atmosphere inside the treatment tank to pass through, it is possible to create a flow of atmosphere that escapes from the treatment tank under reduced pressure to the outside of the treatment tank, thereby reliably preventing the water-repellent agent vapor from circulating into the space between the outer wall of the treatment tank and the inner wall of the chamber.

[0013] (3) The substrate processing apparatus described in (2), characterized in that the exhaust port is provided at the bottom of the processing tank.

[0014] [Function / Effect] As described in (3), if the exhaust port is located at the bottom of the treatment tank, an airflow is generated that passes the atmosphere inside the treatment tank from top to bottom, so that the atmosphere at the top of the treatment tank can be collected into the treatment tank more reliably.

[0015] (4) A substrate processing apparatus according to (1), further comprising an organic solvent supply means for supplying organic solvent vapor into the chamber.

[0016] [Effects] As in (4), even when an organic solvent vapor is supplied into the chamber, the adverse effect on the cleanliness of the substrate due to particles formed by the reaction of the organic solvent and the water-repellent agent is reduced. This is because, according to the present invention, the residue of the water-repellent agent on the inner wall of the chamber is reduced.

[0017] (5)(2) The substrate processing apparatus described above, characterized in that the exhaust port also allows the liquid held in the processing tank to pass through.

[0018] [Function / Effect] If the exhaust port is configured to also function as a drain port, as in (5), it becomes unnecessary to provide a separate drain port for discharging liquid from the processing tank. This configuration allows for a simpler apparatus structure and provides a substrate processing device that is easier to manufacture and maintain.

[0019] (6) A substrate processing method comprising sequentially performing a water-repellent treatment, a cleaning treatment and a drying treatment on multiple substrates, wherein the water-repellent treatment transformation The processing involves a processing tank having an opening at the top through which multiple substrates are introduced. Through the through hole provided in the processing tankA substrate processing method, comprising: a process of evacuating the inside of a chamber in which the processing tank is provided by reducing the pressure; and a process of supplying a water-repellent agent to a plurality of substrates located above the processing tank while executing the process of reducing the pressure of the processing tank.

[0020] [Function and Effect] According to the substrate processing method according to (6), it includes a suction start process of starting to suck the atmosphere in a processing tank having an opening for introducing a plurality of substrates at the upper part, and a water-repellent agent supply process of supplying water-repellent agent vapor from the upper part of the processing tank during the suction operation. The water-repellent agent vapor according to the present invention is collected at the opening of the processing tank and discharged outside the chamber. With such a configuration, when the water-repellent agent vapor is supplied into the chamber, the adhesion of the water-repellent agent residue to the inner wall of the chamber is reduced. This is because the water-repellent agent vapor is collected in the processing tank and cannot enter the space between the outer wall of the processing tank and the inner wall of the chamber. According to the present invention, the residue of the water-repellent agent remains in the chamber, and the adverse effect on the substrate is reduced.

[0021] (7) The substrate processing method according to (6), further comprising a cleaning process of cleaning the processing tank with a liquid after the water-repellent agent supply process.

[0022] [Function and Effect] The substrate processing method according to (7) includes a cleaning process of cleaning the processing tank with a liquid after the water-repellent agent supply process. In this way, the cleanliness of the substrate can be further improved.

[0023] (8) The substrate processing method according to (6), further comprising an organic solvent supply process of supplying an organic solvent to the processing tank after the water-repellent agent supply process.

[0024] [Effect] The substrate processing method according to (8) includes an organic solvent supply process of supplying an organic solvent to the processing tank after the water-repellent agent supply process. Even with such a configuration, particles formed by the reaction of the organic solvent and the water-repellent agent do not adversely affect the cleanliness of the substrate. This is because, according to the present invention, the water-repellent agent does not remain on the inner wall of the chamber.

Effect of the Invention

[0025] According to the substrate processing apparatus of the present invention, when performing a water-repellent treatment on a substrate, the water-repellent agent vapor supplied toward the processing tank located in the chamber is collected at the opening above the processing tank and discharged outside the chamber. With such a configuration, the water-repellent agent vapor does not flow around the outer wall of the processing tank or the side wall of the chamber, and no water-repellent agent residue adheres to the outer wall of the processing tank or the side wall of the chamber. According to the present invention, it is possible to provide a substrate processing apparatus that can maintain the cleanliness of the substrate without the water-repellent agent residue having an adverse effect on the substrate. Further, according to the substrate processing method of the present invention, the water-repellent agent vapor is collected and discharged at the opening of the processing tank. With such a configuration, when the water-repellent agent vapor is supplied into the chamber, no water-repellent agent residue adheres to the side wall of the chamber. This is because the water-repellent agent vapor is collected in the processing tank and cannot flow around into the space between the outer wall of the processing tank and the inner wall of the chamber.

Brief Description of the Drawings

[0026] [Figure 1] It is a functional block diagram for explaining the configuration of the substrate processing apparatus according to the embodiment. [Figure 2] It is a flowchart for explaining the substrate processing according to the embodiment. [Figure 3] It is a schematic diagram for specifically explaining the substrate processing according to the embodiment. [Figure 4] It is a schematic diagram for specifically explaining the substrate processing according to the embodiment. [Figure 5] It is a schematic diagram for specifically explaining the substrate processing according to the embodiment. [Figure 6] It is a schematic diagram for specifically explaining the substrate processing according to the embodiment. [Figure 7] This is a schematic diagram illustrating the substrate processing method according to the embodiment. [Figure 8] This is a schematic diagram illustrating the substrate processing method according to the embodiment. [Figure 9] This is a schematic diagram illustrating the substrate processing method according to the embodiment. [Figure 10] This diagram illustrates the effects of the configuration in the embodiment. [Figure 11] This is a schematic diagram illustrating a modified example of the present invention. [Figure 12] This is a schematic diagram illustrating a modified example of the present invention. [Modes for carrying out the invention]

[0027] Embodiments of the present invention will be described below with reference to the drawings. The substrate processing apparatus of the present invention relates to a batch process that sequentially performs a water-repellent treatment, a cleaning treatment, and a drying treatment on multiple substrates. The substrate processing of the present invention is, for example, part of the process of forming circuits on the surface of a substrate to produce a device. The purity of the liquid pure water (pure water), liquid organic solvent, inert gas, organic solvent vapor, and water-repellent agent vapor, etc., as specified herein is high enough not to affect the substrate processing. Pure water and liquid organic solvent are examples of cleaning solutions of the present invention. [Examples]

[0028] <1. Overview of substrate processing equipment> Figure 1 is a schematic diagram showing an overview of the substrate processing apparatus 1 according to this embodiment. The substrate processing apparatus 1 in this example increases the throughput of substrate processing by performing the same substrate processing on multiple substrates W constituting a lot all at once. In this example, a lot is composed of disc-shaped substrates W arranged at predetermined intervals in the thickness direction of the substrates W. Specific examples of substrate processing according to this example include water-repellent treatment, cleaning treatment, and drying treatment of the substrates.

[0029] The substrate W has a circuit pattern on its surface. The circuit pattern is formed on one side (the front side) of the substrate W. The side of the substrate W on which the circuit pattern is provided is called the device side.

[0030] The substrate processing apparatus 1 is equipped with a chamber 3 capable of housing a lot. When performing various substrate processing operations with the substrate processing apparatus 1, the lot is housed in the chamber 3 and processed within the space inside the chamber 3. The upper end of the chamber 3 is an opening, through which the lot can be stored in and removed from the chamber 3. The chamber 3 is provided with a door 2 that can close the opening. The door 2 is open when a lot is being moved in or out of the chamber 3, and closed when substrate processing is being performed on the lot. When the door 2 is open, the inside of the chamber 3 is in communication with the outside. When the door 2 is closed, the inside of the chamber 3 becomes sealed. Therefore, substrate processing on the lot is performed inside the sealed chamber 3.

[0031] A processing tank 11 capable of holding liquid is provided in the lower part of the internal space of the chamber 3. The processing tank 11 is open to the top and has an opening 12a at its top. Through this opening 12a, a lot can be placed in or removed from the processing tank 11. The processing tank 11 corresponds to the processing tank of the present invention.

[0032] The configuration of the treatment tank pressure reduction unit 40, which discharges the atmosphere inside the treatment tank 11, will now be described. At the bottom of the treatment tank 11, there is a treatment tank exhaust port 42, which is used when reducing the pressure inside the treatment tank 11. The treatment tank exhaust port 42 is connected to an exhaust valve 44 through piping 43, and by controlling the exhaust valve 44, the passage of gas through the treatment tank exhaust port 42 can be allowed or prohibited. Downstream of the exhaust valve 44, there is a pressure reduction pump 45 for reducing the pressure inside the treatment tank 11. When the exhaust valve 44 is open and the pressure reduction pump 45 is operated, a gas flow is generated in which the atmosphere inside the treatment tank 11 is discharged to the outside of the chamber 3 through the treatment tank exhaust port 42. Note that when the treatment tank 11 is holding liquid, the exhaust valve 44 is in a closed state, and the pressure reduction pump 45 does not reduce the pressure inside the tank. The treatment tank exhaust port 42 corresponds to the exhaust port of the present invention. The exhaust valve 44 corresponds to the on / off valve of the present invention. The pressure reduction pump 45 corresponds to the pressure reduction means of the present invention.

[0033] The configuration of the drainage unit 50 for draining the cleaning liquid from the treatment tank 11 will now be described. At the bottom of the treatment tank 11, there is a treatment tank drain port 52 for draining the treatment liquid from the treatment tank 11. The treatment tank drain port 52 is connected to a drain valve 54 via piping 53, and by controlling the drain valve 54, the passage of treatment liquid through the treatment tank drain port 52 can be allowed or prohibited. Downstream of the drain valve 54, there is a drain pump 55 for draining liquid from the treatment tank 11. When the drain valve 54 is open and the drain pump 55 is operated, the liquid in the treatment tank 11 is discharged to the outside of the chamber 3 through the treatment tank drain port 52. Note that when the treatment tank 11 is holding liquid, the drain valve 54 is in a closed state, and the drain pump 55 does not discharge the liquid in the tank. The treatment tank drain port 52 is located at the deepest part of the treatment tank 11 so that all of the liquid held in the treatment tank 11 can be discharged.

[0034] A connecting port 72 is provided at the bottom of the processing tank 11 to discharge the liquid inside the processing tank 11 to the bottom of the chamber 3. Therefore, the liquid held in the processing tank 11 can be discharged either from the processing tank drain port 52 or from the connecting port 72. The connecting port 72 is located at the deepest part of the bottom of the processing tank 11, where it is possible to discharge all of the liquid inside the processing tank 11. The connecting port 72 communicates with a passage 71 that extends outward from the processing tank 11. A drain valve 74 is provided at the discharge end of the passage 71. Therefore, the drain valve 74 is located in the space between the processing tank 11 and the bottom of the chamber 3. When liquid is held in the processing tank 11, the drain valve 74 is closed. On the other hand, when the liquid held in the processing tank 11 is to be quickly discharged from the processing tank 11, the drain valve 74 is opened. Furthermore, when the exhaust valve 44 is open, the drain valve 74 is closed.

[0035] A lifter 13 is provided in the upper part of the inner space of chamber 3 to hold multiple substrates W (lots). The lifter 13 holds each substrate W constituting the lot in a substantially vertical position. Therefore, the lifter 13 holds the vertically oriented substrates W in an arrangement in the thickness direction X of the substrates W (horizontal direction: a direction perpendicular to the vertical direction Z). Incidentally, in Figure 1, the direction perpendicular to both direction X and direction Z is described as direction Y.

[0036] Chamber 3 is equipped with a lifting mechanism 15 for raising and lowering the lifter 13. Therefore, by controlling the lifting mechanism 15, a lot on the processing tank 11 can be taken into the processing tank 11. In other words, in this example, the lifter 13 can be raised to hold the lot at a first position P1 set on the processing tank 11, or the lifter 13 can be lowered to place the lot at a second position P2 set inside the processing tank 11. The substrates W constituting the lot at the first position P1 are located at the top of the processing tank 11, where the entire area holds the liquid (the entire area is located above the liquid surface in the processing tank 11). The substrates W constituting the lot at the second position P2 are located inside the processing tank 11, where the entire area holds the liquid (the entire area is located below the liquid surface in the processing tank 11). In this way, the lifter 13 holds multiple substrates W and moves up and down between the internal position of the processing tank 11 (second position P2) and the upper position of the processing tank 11 (first position P1).

[0037] The substrate processing apparatus 1 is equipped with a plurality of gas supply units that supply gas and predetermined vapors to the chamber 3. Of these, gas supply unit 21 supplies water-repellent agent vapor related to water-repellency of the substrate surface to the internal space of the chamber 3. On the other hand, gas supply unit 31 supplies organic solvent vapor and inert gas to the internal space of the chamber 3. The organic solvent can be any solvent that can maintain the wettability of the substrate W, for example, IPA (isopropyl alcohol). The inert gas can be any gas with low reactivity, for example, nitrogen gas. Gas supply unit 31 corresponds to the organic solvent supply means of the present invention.

[0038] Examples of water-repellent agents used in this example include alkyldisilazanes (silylamines) such as hexamethyldisilazane (HMDS), and fluorides such as alkylchlorosilane fluoride. In other words, any water-repellent agent that can be supplied to the substrate W as a vapor, such as a silicon-based water-repellent agent, is acceptable. The water-repellent treatment in this example is sufficient if it enables modification of the substrate W surface, and it is not necessarily required to form a water-repellent film on the substrate W.

[0039] The substrate processing apparatus 1 includes a liquid supply unit 61 that supplies liquid to the processing tank 11 in the chamber 3. The liquid supply unit 61 can supply solutions such as pure water, liquid organic solvents, and organic solvents diluted with water to the processing tank 11.

[0040] A pressure sensor 89 for detecting the pressure inside the chamber 3 is provided on the inner wall of the chamber 3. The pressure sensor 89 is positioned to avoid the bottom of the chamber 3 where the liquid discharged from the processing tank 11 through the passage 71 is held. The detection signal output by the pressure sensor 89 is used to adjust the opening of various valves to achieve a predetermined pressure inside the chamber 3.

[0041] The side wall of chamber 3 is equipped with a chamber exhaust port 82 for reducing the pressure inside chamber 3, and a pressure reducing pump 85 connected to the chamber exhaust port 82 via piping 81. The chamber exhaust port 82 is positioned to avoid the bottom of chamber 3 where the liquid discharged from the processing tank 11 via passage 71 is held. A control valve 84 is located in the middle of piping 81 and is closed when liquid is held at the bottom of chamber 3 or when the pressure inside chamber 3 is reduced via the processing tank exhaust port 42. The control valve 84 is open when the pressure inside chamber 3 is maintained at atmospheric pressure or when the pressure inside chamber 3 is reduced while the processing tank 11 is holding liquid.

[0042] In addition, the chamber 3 is equipped with a chamber drain port 92 for discharging the liquid held at the bottom of the chamber 3 to the outside of the chamber 3. The chamber drain port 92 is connected to a drain valve 94 via piping 93. The chamber drain port 92 is located at the deepest part of the bottom of the chamber 3, where it is possible to discharge all of the liquid inside the chamber 3. When the liquid held at the bottom of the chamber 3 is to be discharged to the outside of the chamber 3, the drain valve 94 is in an open state, and in other cases, it is in a closed state. The piping 93 further connects the drain valve 94 to the drain pump 55 described above. Therefore, the drain pump 55 is configured to facilitate drainage by sucking the processed liquid from the processing tank 11 or the bottom of the chamber 3.

[0043] Chamber 3 is equipped with a CPU (Central Processing Unit) 101 that controls each of the valves, the door 2, the lifting mechanism 15, the pressure reducing pump 45, the drain pump 55, the pressure reducing pump 85, etc., and a storage unit 102 that stores various information necessary for control. The specific configuration of the CPU 101 is not particularly limited. For example, one CPU 101 may be provided in Chamber 3, or multiple CPUs 101 may be provided for each control target. Alternatively, multiple CPUs 101 may be provided to implement some of the control necessary for the operation of Chamber 3 in a single unit. The specific configuration of the storage unit 102 is also not particularly limited, similar to the CPU 101.

[0044] The specific configuration of each supply unit will be described below. The gas supply unit 21, which supplies water-repellent vapor into the chamber 3, has a discharge unit 22 located inside the chamber 3. The discharge unit 22 is located above the processing tank 11 and is configured to discharge water-repellent vapor. The discharge units 22 are located on both the right and left sides of the substrate W at the first position P1, and the gas supply unit 21 is configured to simultaneously eject water-repellent vapor from the two discharge units 22 toward the center of the space inside the chamber 3. The discharge unit 22 has a tubular shape with multiple discharge ports, and in practice, the discharge unit 22 ejects water-repellent vapor from each of the multiple discharge ports. In other words, the gas supply unit 21 is configured to supply water-repellent vapor to the substrate W located above the processing tank 11 (first position P1).

[0045] The gas supply unit 21 includes a pipe 23 that supplies water-repellent agent vapor to the discharge section 22, and a valve 24 that controls the amount of water-repellent agent vapor ejected. The water-repellent agent vapor supply source 25 includes a storage section for storing the water-repellent agent and a vaporization section for vaporizing the water-repellent agent. The pipe 23 is located between the valve 24, which is upstream of the discharge section 22, and the water-repellent agent vapor supply source 25, which is located further upstream of the valve 24, allowing the water-repellent agent vapor to pass from the water-repellent agent vapor supply source 25 through the valve 24 to the discharge section 22. When the valve 24 is open, the water-repellent agent vapor flows through the pipe 23 and is ejected from the discharge section 22. When the valve 24 is closed, the flow of water-repellent agent vapor is blocked by the valve 24 and does not reach the discharge section 22.

[0046] The structure of the gas supply unit 31, which supplies inert gas or the like into the chamber 3, will now be described. The gas supply unit 31 has a discharge section 32 located inside the chamber 3. The discharge section 32 is located above the processing tank 11 and is configured to discharge inert gas or organic solvent vapor. Similar to the discharge section 22 of the gas supply unit 21, the discharge section 32 is located on both the right and left sides of the substrate W at the first position P1. The gas supply unit 31 is configured to simultaneously eject inert gas or organic solvent vapor from the two discharge sections 32 toward the center of the space inside the chamber 3. The discharge section 32, similar to the discharge section 22, has a tubular shape with multiple discharge ports that eject gas toward the substrate W, and is configured to simultaneously eject gas from the right and left sides of the substrate W.

[0047] The gas supply unit 31 includes an inert gas supply module 31a that supplies inert gas to the discharge section 32, and an organic solvent vapor supply module 31b that supplies organic solvent vapor to the discharge section 32. The inert gas supply module 31a includes a pipe 33a that supplies inert gas to the discharge section 32, and a valve 34a that controls the amount of inert gas ejected. The inert gas supply source 35a has a gas tank that stores liquefied inert gas. The pipe 33a is located between the valve 34a, which is located upstream of the discharge section 32, and the inert gas supply source 35a, which is located further upstream of the valve 34a, allowing the inert gas to pass from the inert gas supply source 35a through the valve 34a to the discharge section 32. When the valve 34a is open, the inert gas flows through the pipe 33a and is ejected from the discharge section 32. When the valve 34a is closed, the flow of inert gas is blocked by the valve 34a and does not reach the discharge section 32.

[0048] The organic solvent vapor supply module 31b of the gas supply unit 31 has the same configuration as the inert gas supply module 31a. Specifically, the organic solvent vapor supply module 31b includes a pipe 33b that supplies organic solvent vapor to the discharge section 32 and a valve 34b that controls the amount of organic solvent vapor ejected. The organic solvent vapor supply source 35b has a storage section that stores liquid organic solvent and a vaporization section that vaporizes the organic solvent. The pipe 33b is located between the valve 34b, which is located upstream of the discharge section 32, and the organic solvent vapor supply source 35b, which is located further upstream of the valve 34b, allowing organic solvent vapor to pass from the organic solvent vapor supply source 35b through the valve 34b to the discharge section 32. When the valve 34b is open, organic solvent vapor flows through the pipe 33b and is ejected from the discharge section 32. When the valve 34b is closed, the flow of organic solvent vapor is blocked by the valve 34b and does not reach the discharge section 32.

[0049] Thus, the gas supply unit 31 comprises an inert gas supply module 31a and an organic solvent vapor supply module 31b, both of which share a discharge section 32. The discharge section 32 can eject inert gas originating from the inert gas supply module 31a or organic solvent vapor originating from the organic solvent vapor supply module 31b. When inert gas is ejected from the discharge section 32, the valve 34a of the inert gas supply module 31a is opened, and the valve 34b of the organic solvent vapor supply module 31b is closed. On the other hand, when organic solvent vapor is ejected from the discharge section 32, the valve 34a of the inert gas supply module 31a is closed, and the valve 34b of the organic solvent vapor supply module 31b is open.

[0050] Next, the liquid supply unit 61 that supplies liquid to the processing tank 11 will be described. The liquid supply unit 61 has a processing liquid supply port 62 located inside the processing tank 11. The processing liquid supply port 62 discharges pure water and liquid organic solvent into the processing tank 11. The liquid supply unit 61 includes a pure water supply module 61a that supplies pure water to the processing liquid supply port 62, and a liquid organic solvent supply module 61b that supplies liquid organic solvent to the processing liquid supply port 62. The pure water supply module 61a includes a pipe 63a that supplies pure water to the processing liquid supply port 62, and a valve 64a that controls the amount of pure water discharged. The pure water supply source 65a has a tank for storing pure water. The pipe 63a is located between the valve 64a, which is located upstream of the processing liquid supply port 62, and the pure water supply source 65a, which is located further upstream of the valve 64a, and allows pure water to pass from the pure water supply source 65a through the valve 64a to the processing liquid supply port 62. When valve 64a is open, pure water flows through pipe 63a and is discharged from the treatment liquid supply port 62. When valve 64a is closed, the flow of pure water is blocked by valve 64a and does not reach the treatment liquid supply port 62.

[0051] The liquid organic solvent supply module 61b of the liquid supply unit 61 has the same configuration as the pure water supply module 61a. That is, the liquid organic solvent supply module 61b is equipped with a pipe 63b that supplies liquid organic solvent to the processing liquid supply port 62 and a valve 64b that controls the amount of liquid organic solvent released. The liquid organic solvent supply source 65b has a storage section for storing liquid organic solvent. The pipe 63b is installed between the valve 64b, which is located upstream of the processing liquid supply port 62, and the liquid organic solvent supply source 65b, which is located further upstream of the valve 64b, allowing the liquid organic solvent to pass from the liquid organic solvent supply source 65b through the valve 64b to the processing liquid supply port 62. When the valve 64b is open, the liquid organic solvent flows through the pipe 63b and is released from the processing liquid supply port 62. When the valve 64b is closed, the flow of liquid organic solvent is blocked by the valve 64b and does not reach the processing liquid supply port 62.

[0052] Thus, the liquid supply unit 61 comprises a pure water supply module 61a and a liquid organic solvent supply module 61b, both of which share a processing liquid supply port 62. Pure water originating from the pure water supply module 61a or a liquid organic solvent originating from the liquid organic solvent supply module 61b can be discharged from the processing liquid supply port 62. When pure water is discharged from the processing liquid supply port 62, the valve 64a of the pure water supply module 61a is opened, and the valve 64b of the liquid organic solvent supply module 61b is closed. On the other hand, when a liquid organic solvent is discharged from the processing liquid supply port 62, the valve 64a of the pure water supply module 61a is closed, and the valve 64b of the liquid organic solvent supply module 61b is open.

[0053] In this embodiment, the gas supply unit 31 had a separate storage section for liquid organic solvents, while the liquid supply unit 61 had a separate storage section for liquid organic solvents. However, the gas supply unit 31 and the liquid supply unit 61 may share a similar storage section.

[0054] <Circuit board processing flow> Hereafter, the substrate processing using the substrate processing apparatus 1 according to the embodiment will be specifically described with reference to the flowchart shown in Figure 2. The substrate processing in this example is configured to perform various substrate processing on a lot supported by the lifter 13 at the second position P2. The processing tank 11 is assumed to contain pure water, and the door 2 is assumed to be closed. The pressure inside the chamber 3 at this time is atmospheric pressure.

[0055] Step S1: First, an inert gas is supplied into the chamber 3 by the gas supply unit 31. At this time, the pressure inside the chamber 3 is reduced through the chamber exhaust port 82 located on the lower side of the chamber 3, creating a reduced-pressure state inside the chamber 3. Maintaining this state allows the air inside the chamber 3 to be quickly replaced by the inert gas. In this way, highly reactive gases such as oxygen contained in the air are exhausted to the outside of the chamber 3, completing the necessary preparations before the various substrate processing steps that follow in this step. In the next step S2, organic solvent vapor is supplied into the chamber 3. In this step, the pressure inside the chamber 3 is reduced beforehand to dilute the inert gas inside the chamber 3, allowing it to be quickly replaced by organic solvent vapor. It can also be considered that by reducing the pressure inside the chamber 3, some of the inert gas is already expelled from the chamber 3 before the organic solvent vapor is supplied.

[0056] In this step, the inert gas supplied to chamber 3 flows around the processing tank 11 and reaches the chamber exhaust port 82. The inert gas is then discharged outside chamber 3 from the chamber exhaust port 82. Figure 3(a) illustrates the gas flow in this step.

[0057] Step S2: Next, liquid organic solvent is supplied to the processing tank 11 through the liquid supply unit 61, while the pure water in the processing tank 11 is discharged from the processing tank drain port 52. As a result of this operation, the pure water held in the processing tank 11 is gradually replaced by the liquid organic solvent. Therefore, the lot on the second position P2 is immersed in the organic solvent. In this step, organic solvent vapor is supplied into the chamber 3 by the gas supply unit 31. At this time, the pressure inside the chamber 3 is reduced through the chamber exhaust port 82 located on the lower side of the chamber 3, creating a reduced pressure state inside the chamber 3. Maintaining this state, the inert gas in the chamber 3 is quickly replaced by organic solvent vapor according to the principle described in step S1 above. In this way, each substrate W constituting the lot is in a state where its wettability is reliably maintained. Figure 3(b) illustrates the flow of gas and liquid in this step.

[0058] Step S3: The rod located at the second position P2 is raised by the lifter 13 from the second position P2 to the first position P1. When the drain valve 74 is opened in this state, the liquid organic solvent held in the processing tank 11 quickly flows out to the bottom of the chamber 3 and is held there. Meanwhile, organic solvent vapor is supplied from the gas supply unit 31. At this time, the pressure reducing pump 45 is not operating, so the amount of organic solvent vapor supplied is automatically discharged outside the chamber 3 through the chamber exhaust port 82. Therefore, the pressure inside the chamber 3 in this step is equal to atmospheric pressure. Consequently, the liquid organic solvent held in the processing tank 11 is not drawn in by the gas phase and is quickly discharged outside the processing tank 11. This step is preparation for the next step S4. That is, in step S4, pressure is reduced through the processing tank exhaust port 42 located at the bottom of the processing tank 11, but the liquid organic solvent held in the processing tank 11 hinders this operation. This step allows for depressurization of the inside of the processing tank 11 through the processing tank exhaust port 42 by emptying the processing tank 11. Figure 4(a) illustrates the gas flow in this step.

[0059] Step S4: Depressurization and exhaust of the treatment tank 11 is initiated through the treatment tank exhaust port 42. When the treatment tank 11 is depressurized and exhausted, the chamber 3 also becomes depressurized. As a result, the atmosphere inside the chamber 3 is drawn into the treatment tank 11 through the opening 12a at the top of the treatment tank 11 and reaches the treatment tank exhaust port 42. In this way, the treatment tank depressurization unit 40 exhausts the chamber 3 by depressurizing the treatment tank 11, which has become empty after the cleaning liquid has been drained.

[0060] Step S5: While the depressurized exhaust from the processing tank 11 continues, water-repellent agent vapor is supplied into the chamber 3 from the gas supply unit 21. At this time, the chamber 3 is under reduced pressure. Therefore, the atmosphere inside the processing tank 11 is quickly replaced from organic solvent vapor to water-repellent agent vapor by the same principle as the depressurization operation in step S1. The water-repellent agent vapor supplied from the gas supply unit 21 is exhausted outside the chamber 3 by the gas flow accompanying the depressurized exhaust from the processing tank 11. Therefore, the water-repellent agent vapor supplied into the chamber 3 is collected at the opening 12a of the processing tank 11. In this way, particles are less likely to affect the substrate W than in a configuration where the water-repellent agent vapor is sucked in from the chamber exhaust port 82. If the water-repellent agent vapor is sucked in from the chamber exhaust port 82, the water-repellent agent vapor will not be collected at the opening 12a of the processing tank 11 but will circulate to the space located between the side wall of the processing tank 11 and the side wall of the chamber 3. As a result, the water-repellent agent adheres to the side walls of chamber 3 and the outer walls of the processing tank 11, and particles will be generated in these areas in the future. According to this step, the adhesion of the water-repellent agent to the side walls of chamber 3 and the outer walls of the processing tank 11 is prevented, so particles are not generated in those areas. Furthermore, each of the substrates W exposed to the water-repellent agent vapor has its hydrophilic surface become hydrophobic, and the substrate surface is modified.

[0061] In this step, an inert gas is ejected from the gas supply unit 31. The flow velocity of the inert gas at this time is lower than the ejection velocity of the inert gas in step S1. By weakly ejecting the inert gas from the gas supply unit 31 in this way, adverse effects caused by the backflow of the water-repellent agent vapor in the chamber 3 into the gas supply unit 31 are prevented. The water-repellent agent vapor and the organic solvent react to produce particles. By ejecting the inert gas from the discharge section 32, particles that adversely affect the cleaning of the substrate W are not generated in the piping of the gas supply unit 31. Figure 4(b) illustrates the gas flow in steps S4 and S5.

[0062] Step S6: While the pressure inside the treatment tank 11 is continuously reduced through the treatment tank exhaust port 42, organic solvent vapor is supplied into the chamber 3. When the pressure inside the treatment tank 11 is reduced, the chamber 3 also becomes a reduced-pressure state. Therefore, the atmosphere inside the treatment tank 11 is quickly replaced from water-repellent agent vapor to organic solvent vapor by the same principle as the pressure reduction operation in step S1. The organic solvent vapor supplied from the gas supply unit 31 is exhausted outside the chamber 3 by the flow of atmosphere from the opening of the treatment tank 11 toward the treatment tank exhaust port 42. Therefore, the organic solvent vapor supplied into the chamber 3 is not collected at the opening 12a of the treatment tank 11 and does not circulate into the space located between the side wall of the treatment tank 11 and the side wall of the chamber 3. As a result, neither water-repellent agent vapor nor organic solvent vapor enters this space, so no particles are generated on the side wall of the chamber 3 and the outer wall of the treatment tank 11. Figure 5(a) illustrates the gas flow in this step.

[0063] In this step, any excess water-repellent agent remaining on the surface of the substrate W reacts with organic solvent vapor and is released as particles. These particles are removed in the subsequent cleaning process and do not adversely affect the cleanliness of the substrate W. On the other hand, if particles are generated on the side walls of the chamber 3 and the outer walls of the processing tank 11, these particles are not removed in the subsequent cleaning process. However, in this example, the exhaust from the chamber 11 through the processing tank 11 suppresses the adhesion of particles to the side walls of the chamber 3 and the outer walls of the processing tank 11.

[0064] Step S7: The drain valve 94, which was in a closed state, opens, and the liquid organic solvent held at the bottom of the chamber 3 is discharged from the chamber 3. In this step, inert gas is supplied from the gas supply unit 31. At this time, the pressure reducing pump 45 is not operating, so the amount of inert gas supplied is automatically discharged outside the chamber 3 through the chamber exhaust port 82. Therefore, the pressure inside the chamber 3 in this step is equal to atmospheric pressure, and the liquid organic solvent at the bottom of the chamber 3 is quickly discharged outside the chamber 3 without being sucked in by the gas phase. Figure 5(b) illustrates the flow of gas and liquid in this step. Note that this step may be performed under reduced pressure conditions. Therefore, the process of discharging the liquid organic solvent in this step may be performed during steps S4 to S6 described above.

[0065] Step S8: The treatment tank 11 is cleaned with pure water. During this process, the lot is retracted at the first position P1. The pressure inside the chamber 3 during this step is atmospheric pressure, and an inert gas is continuously supplied to the chamber 3. Figure 6(a) shows the state after the discharge of the liquid organic solvent that was performed in step S7 has been completed. Figure 6(b) shows the state in which pure water is being supplied to the treatment tank 11. As a result, the water level of the pure water held in the treatment tank 11 rises, and as shown in Figure 7(a), the treatment tank 11 becomes full of pure water. From this state, the pure water in the treatment tank 11 is discharged from the treatment tank 11 through the treatment tank drain port 52. In this way, the particles adhering to the treatment tank 11 are dissolved in the pure water and removed. Before cleaning, the water-repellent agent and organic solvent are adhering to the inner wall of the treatment tank 11 through steps S5 and S6 described above. Therefore, particles are adhering to the inner wall due to the reaction of both agents. Step S8 is configured to clean the processing tank 11 in order to remove these particles from the inner wall of the processing tank 11.

[0066] Step S9: Once the cleaning of the processing tank 11 is complete, the substrate W is then cleaned to remove any particles adhering to it. In this step, the pressure inside the chamber 3 is atmospheric pressure, and an inert gas is continuously supplied to the chamber 3. First, pure water is supplied to the now empty processing tank 11. Once the processing tank 11 is full of pure water, the lot that was in the first position P1 is lowered to the second position P2, and each substrate W constituting the lot is immersed in the pure water. In this state, pure water is supplied to the processing tank 11 while the pure water inside the processing tank 11 is discharged. In this step, the particles on the surface of the substrate W are dissolved and removed from the substrate W. Furthermore, since unused pure water is continuously supplied to the processing tank 11, the cleanliness of the substrate W is further enhanced. Figures 7(b) and 8(a) illustrate the flow of gas and liquid in this step.

[0067] Step S10: Depressurization is initiated within Chamber 3, and the Chamber 3 becomes a depressurized state. In this step, the Chamber 3 continues to be supplied with inert gas. This step is preparation for the next step, S11. In the next step, S11, organic solvent vapor is supplied into Chamber 3. In this step, by depressurizing Chamber 3 beforehand, the inert gas inside Chamber 3 is made dilute, so that the inert gas inside Chamber 3 is quickly replaced by organic solvent vapor. It can also be considered that by depressurizing Chamber 3, some of the inert gas has already been driven out of Chamber 3 before the organic solvent vapor is supplied. Figure 8(b) illustrates the gas flow in this step.

[0068] Step S11: While the chamber 3 remains under reduced pressure, organic solvent vapor is supplied into the chamber 3. The atmosphere inside the chamber 3 is then rapidly replaced from inert gas to organic solvent vapor by the same principle as the reduced pressure operation in step S1. The lot inside the chamber 3 is exposed to the organic solvent vapor, and each substrate W constituting the lot undergoes a preliminary drying treatment. In this step, the organic solvent vapor supplied to the chamber 3 flows around the processing tank 11 and reaches the chamber exhaust port 82. Even with this configuration, particles are not stirred up from the side walls of the chamber 3 and the outer walls of the processing tank 11 and float inside the chamber 3. This is because no particles are generated on the side walls of the chamber 3 and the processing tank 11 in this example. If particles adhere to the surface of the substrate W in this step, they will remain without being removed, affecting the quality of the produced devices. However, in this example, since no particles float inside the chamber 3 to begin with, this situation does not occur. Figure 9(a) illustrates the gas flow in this step.

[0069] Step S12: With the pressure inside chamber 3 returned to atmospheric pressure, an inert gas is supplied into chamber 3. This prevents any further organic solvent from adhering to the surface of the substrate W. In this way, the preliminary drying of the substrates W that make up the lot is completed. If the inert gas is continued to be supplied into chamber 3, the substrates W will gradually dry. The substrate processing according to this example is completed when the drying of the substrates W is complete. Figure 9(b) illustrates the gas flow in this step.

[0070] As described above, in the water-repellent treatment process in the substrate processing apparatus 1 of the present invention, the drainage unit 50 drains the processing liquid from the processing tank 11 to empty the processing tank 11, and then the processing tank depressurization unit 40 depressurizes the inside of the processing tank 11, thereby exhausting the inside of the chamber 3, while the gas supply unit 21 supplies water-repellent agent vapor to the substrate W located above the processing tank 11 (first position P1). More specifically, the processing tank 11 of the substrate processing apparatus 1 is provided with a processing tank exhaust port 42 that allows the atmosphere inside the processing tank 11 to pass through, and when water-repellent agent vapor is supplied into the chamber 3, the depressurization pump 45 sucks the water-repellent agent vapor from the processing tank exhaust port 42. Then, the water-repellent agent vapor collected inside the processing tank 11 is discharged from the processing tank exhaust port 42 through the opening 12a at the top of the processing tank 11. In other words, the water-repellent agent vapor discharged from the discharge section 22 in the substrate processing apparatus 1 according to the present invention flows along with the atmospheric flow, passing through the opening 12a of the processing tank 11 and reaching the processing tank exhaust port 42 provided in the processing tank 11. With this configuration, when the water-repellent agent vapor is supplied into the chamber 3, water-repellent agent residues such as particles do not adhere to the side walls of the chamber 3 or the outer walls of the processing tank 11. This is because the water-repellent agent vapor is collected in the processing tank 11 and cannot flow into the space between the outer wall of the processing tank 11 and the inner wall of the chamber 3. According to the present invention, water-repellent agent residues do not remain on the side walls of the chamber 3 or the outer walls of the processing tank 11, and these do not become particles that adversely affect the substrate W.

[0071] Next, the actual effects of the present invention will be explained. Figure 10 shows the results of actual measurements of the effect of particles on the substrate W. As shown in Figure 10, when the water-repellent agent vapor is not aspirated in step S5, the number of particles with a diameter of 150 nm or more increases significantly compared to before treatment. In contrast, when the water-repellent agent vapor is aspirated in step S5, although the number of particles with a diameter of 150 nm or more increases compared to before treatment, the amount of increase is suppressed compared to when the water-repellent agent vapor is not aspirated. In Figure 10, (i) shows the increase in particles per unit area on the substrate W located at the beginning of the lot, and (ii) shows the increase in particles per unit area on the substrate W located at the 25th position from the beginning of the lot. In Figure 10, (iii) shows the increase in particles per unit area on the substrate W located at the 43rd position from the beginning of the lot. The lot consists of 50 substrates W.

[0072] The present invention is not limited to the embodiments described above, and the following modifications are possible.

[0073] <Example 1> In the embodiment, the exhaust port 42 of the processing tank was located at the bottom of the processing tank 11. However, the present invention is not limited to this configuration, and the exhaust port 42 may be located on the side wall of the processing tank 11. The same effects as in the embodiment can be achieved with such a configuration.

[0074] <Modification 2> In step S6 of the embodiment, it is not necessarily required to continuously reduce the pressure inside the chamber 3 for the entire duration of the step. For example, the pressure inside the chamber 3 may be reduced to atmospheric pressure partway through step S6, allowing the organic solvent vapor supplied into the chamber 3 to be naturally discharged from the chamber exhaust port 82. In this way, the liquid organic solvent held at the bottom of the chamber 3 in step S6 can be quickly discharged outside the chamber 3.

[0075] <Variation 3> In step S5 of the embodiment, the water-repellent vapor was supplied into the chamber 3 with the substrate W in the first position P1, but the present invention is not limited to this configuration. The water-repellent vapor may be supplied into the chamber 3 while the substrate W is moved back and forth between the first position P1 and the second position P2. With such a configuration, the water-repellent treatment of the substrate W can be performed while changing the positional relationship between the water-repellent vapor discharge part 22 and the substrate W, so that the water-repellent vapor is reliably distributed over the entire surface of the substrate W. Therefore, according to this modified example, a more reliable water-repellent treatment can be applied to the substrate W.

[0076] <Modification 4> This modification clarifies the direction of ejection of the water-repellent agent vapor in the discharge section 22. That is, as shown in Figure 11, the discharge section 22 may be configured to eject the water-repellent agent vapor diagonally downwards. With such a configuration, it is possible to prevent the water-repellent agent vapor from reaching the ceiling surface or other surfaces inside the chamber 3. According to this modification, the adhesion of the water-repellent agent to the inner wall of the chamber 3 is further prevented compared to the configuration of the embodiment, so that particles do not adversely affect the cleanliness of the substrate W. Similarly, the discharge section 32 may also be configured to eject organic solvent vapor diagonally downwards.

[0077] <Modification 5> In the above embodiment, the discharge section 22 for the water-repellent vapor was located above the discharge section 32 for the organic solvent vapor, but the positional relationship between the discharge sections 22 and 32 can also be reversed. That is, according to this modified example, the discharge section 32 for the organic solvent vapor is located above the discharge section 22 for the water-repellent vapor.

[0078] <Variation 6> Compared to the above-described embodiment, the piping of the substrate processing apparatus 1 can be omitted. This modified version is particularly suitable for apparatuses to which Modified Versions 4 and 5 are applied. In other words, this modified version is suitable for a configuration in which the discharge section 22 for water-repellent vapor is located below the discharge section 32 for organic solvent vapor, and the discharge section 22 ejects the water-repellent vapor diagonally downward. In this modified version, as shown in Figure 12, the processing tank exhaust port 42, piping 43, exhaust valve 44, and pressure reducing pump 45 in the embodiment are omitted, and the chamber 3 is also depressurized by the pressure reducing pump 85 in steps S4, S5, and S6. When the pressure is reduced, the drain valve 74 opens, and the water-repellent vapor ejected toward the processing tank 11 flows out of the processing tank 11 through the connecting port 72 located at the bottom of the processing tank 11 and reaches the chamber exhaust port 82. According to the configuration of this modified version, particles do not affect the cleanliness of the substrate W, similar to the above-described embodiment.

[0079] <Example 7> In the above-described embodiment, steps S6 and S11 were included as steps for supplying organic solvent vapor into the chamber 3, but these steps may be omitted. According to this modified example, the substrate W is less affected by particles compared to the configuration of the embodiment. However, even so, as explained in step S5, if the water-repellent agent vapor is sucked from the bottom of the treatment tank 11, water-repellent agent residue will not adhere to the side walls of the chamber 3 or the outer walls of the treatment tank 11, and it is possible to prevent the water-repellent agent residue from adversely affecting the cleanliness of the substrate W.

[0080] <Differentiation Example 8> In the above-described embodiment, the treatment tank drain port 52 and the chamber drain port 92 were connected to a common drain pump 55, but the present invention is not limited to this configuration. The treatment tank drain port 52 and the chamber drain port 92 may be connected to two separate drain pumps, and the piping related to the treatment tank drain port 52 and the piping related to the chamber drain port 92 may be made independent.

[0081] <Modification 9> In the above-described embodiment, the treatment tank exhaust port 42 and the chamber exhaust port 82 were connected to separate pipes, but the present invention is not limited to this configuration. The treatment tank exhaust port 42 and the chamber exhaust port 82 may be connected to a common pressure reducing pump, and the piping related to the treatment tank drain port 52 and the piping related to the chamber drain port 92 may be integrated.

[0082] <Variation 10> In the above-described embodiment, a treatment tank exhaust port 42 was provided at the bottom of the treatment tank 11. However, the present invention can also be applied to devices in which an exhaust port is not provided at the bottom of the treatment tank 11. That is, in the present invention, it is sufficient to provide a vent at the bottom of the treatment tank 11 through which water-repellent agent vapor is drawn in. For example, a pipe connected to a vacuum pump outside the chamber 3 extending from the opening 12a of the treatment tank 11 toward the bottom of the treatment tank 11 may be provided, and the inside of the treatment tank 11 may be depressurized through this pipe.

[0083] <Variation 11> In the above-described embodiment, a water-repellent agent vapor was supplied into the chamber 3, but the present invention is not limited to this configuration. Instead of a water-repellent agent vapor, a water-repellent agent in mist form may be supplied to the chamber 3. [Explanation of Symbols]

[0084] 1. Substrate processing apparatus 2 doors 3 Chambers 11 Processing tank 12a opening 13 Lifter 15 Lifting mechanism 21. Gas supply unit (means for supplying water-repellent agent) 31a Inert gas supply module 31b Organic Solvent Vapor Supply Module 40. Processing tank pressure reduction unit (processing tank pressure reduction means) 42 Treatment tank exhaust port 43 Piping 44. Exhaust valve (on / off valve) 45 Pressure Reducing Pump 50 Drainage unit (drainage means) 52 Treatment tank drain port 53 Piping 54 Drain valve 55 Drainage pump 61a Pure water supply module 61b Liquid Organic Solvent Supply Module 71 aisle 72 Contact Point 74 Drain valve 81 Piping 82 Chamber exhaust port 84. Adjustment valve 85 Pressure Reducing Pump 92 Chamber drain port 93 Piping 94 Drain valve 101 CPU 102 Storage section W board

Claims

1. A substrate processing apparatus that sequentially performs water-repellent treatment, cleaning treatment, and drying treatment on multiple substrates, A sealed chamber, A processing tank, which is provided inside the chamber and has an open top, for storing cleaning liquid, A lifter that holds multiple substrates and moves up and down between an internal position inside the processing tank and an upper position above the processing tank, A drainage means for draining the cleaning liquid stored in the treatment tank, A processing tank depressurization means for depressurizing the processing tank and exhausting the chamber, A water-repellent agent supply means for supplying a water-repellent agent to a substrate located above the aforementioned treatment tank, The through hole provided in the processing tank, The system includes control means for controlling a series of processes on the plurality of substrates, The control means is During the process of applying the water-repellent treatment to the multiple substrates, the treatment liquid in the treatment tank is drained by the drainage means, and then the treatment tank pressure is reduced through the through-hole by the treatment tank pressure reduction means, thereby exhausting the chamber while supplying the water-repellent agent to the substrates located above the treatment tank by the water-repellent agent supply means. A substrate processing apparatus characterized by the following:

2. In the substrate processing apparatus according to claim 1, The aforementioned treatment tank pressure reducing means is The processing tank comprises an exhaust port formed in the processing tank, a pipe with one end connected to the exhaust port, an on / off valve interposed in the pipe, and a pressure reducing pump connected to the other end of the pipe. When the water-repellent agent is supplied to the substrate located above the treatment tank by the water-repellent agent supply means, the control means opens the on-off valve while reducing the pressure using the pressure reducing pump, and discharges the water-repellent agent collected in the treatment tank from the upper opening of the treatment tank through the exhaust port. A substrate processing apparatus characterized by the following:

3. In the substrate processing apparatus according to claim 2, The exhaust port is located at the bottom of the processing tank. A substrate processing apparatus characterized by the following:

4. In the substrate processing apparatus according to claim 1, The chamber further comprises an organic solvent supply means for supplying organic solvent vapor into the chamber. A substrate processing apparatus characterized by the following:

5. In the substrate processing apparatus according to claim 2, The exhaust port also allows the liquid held in the processing tank to pass through. A substrate processing apparatus characterized by the following:

6. A substrate processing method comprising sequentially performing a water-repellent treatment, a cleaning treatment, and a drying treatment on multiple substrates, The process of the aforementioned water-repellent treatment is as follows: A processing tank depressurization process involves depressurizing the inside of a processing tank, which has an opening at the top into which multiple substrates are introduced, through through holes provided in the processing tank, thereby exhausting the chamber in which the processing tank is located. The process includes a water-repellent agent supply process in which a water-repellent agent is supplied to a plurality of substrates located above the processing tank while the processing tank depressurization process is being carried out. A substrate processing method characterized by the following:

7. In the substrate processing method described in claim 6, The process includes a treatment tank cleaning process, which involves cleaning the treatment tank with a liquid after the water-repellent agent supply process. A substrate processing method characterized by the following:

8. In the substrate processing method described in claim 6, The process includes an organic solvent supply process that supplies an organic solvent to the treatment tank after the water-repellent agent supply process. A substrate processing method characterized by the following:

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