High-temperature vacuum separation processing mini environment

Abstract

To provide a method and apparatus for substrate processing, and a cluster tool including a transfer chamber assembly and a plurality of processing assemblies.SOLUTION: A transfer chamber assembly 150 and processing assemblies 160b include processing platforms for atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, cleaning, implanting, heating, annealing, and / or polishing processes. A processing chamber volume 278 is sealed from a transfer chamber volume 226 using a support chuck 224b on which a substrate is disposed. The support chuck is raised to form an isolation seal between the processing chamber volume and the transfer chamber volume using a bellows assembly 250 and a chuck sealing surface.SELECTED DRAWING: Figure 3B

Description

Technical Field

[0001] Embodiments described herein generally relate to methods and apparatuses for processing substrates. In particular, embodiments of the present disclosure relate to a substrate processing platform that uses multiple processing chambers to process substrates.

Background Art

[0002] Conventional cluster tools for processing substrates are configured to perform one or more processes during substrate processing therein, such as by deposition of materials onto substrates, etching of substrates or materials on substrates, or other processes used during fabrication of integrated circuit chips. For example, a cluster tool can include a PVD chamber for performing a physical vapor deposition (PVD) process on a substrate, an ALD chamber for performing an atomic layer deposition (ALD) process on a substrate, a CVD chamber for performing a chemical vapor deposition (CVD) process on a substrate, an etching chamber for performing an etching process on a substrate, a heat treatment chamber for performing a heat process on a substrate, a plasma ion implantation chamber for implanting ions into a substrate or a film layer formed thereon, and / or one or more other processing chambers.

[0003] The aforementioned cluster tools have limitations such as mechanical limitations on the throughput of substrates therein, the level of particulates (particles) present in the substrate processing environment, and constraints on process conditions within the processing chambers on the cluster tool. Therefore, what is needed in the art is a cluster tool that can improve mechanical throughput, reduce the level of particulates present in the substrate processing environment, and improve the flexibility of process conditions between processing chambers within the same cluster tool.

[0004] This specification describes a substrate processing apparatus that uses multiple processing assemblies to process substrates. [Overview of the Initiative]

[0005] This disclosure relates, in general terms, to apparatus for substrate processing, as well as to cluster tools comprising a transfer chamber assembly and a plurality of processing assemblies.

[0006] In one embodiment, an apparatus for processing multiple substrates simultaneously is described. The apparatus comprises a transfer chamber assembly having one or more walls defining a transfer space, a support chuck having a substrate support surface, a seal ring having a chuck seal surface, and a plurality of processing assemblies disposed within the transfer chamber assembly. The chuck seal surface is disposed around the substrate support surface of the support chuck. Each processing assembly comprises one or more processing chamber walls and a lift assembly. The processing chamber wall has an upper seal surface and a lift assembly for moving the support chuck between a transfer position and a processing position. When the support chuck is in the processing position, the upper seal surface forms a separation seal with the chuck seal surface and forms a sealed processing chamber space between one or more processing chamber walls and the support chuck, which is fluidly separated from the transfer space. The transfer space is fluidly connected to the processing chamber space when the support chuck is in the transfer position.

[0007] In other embodiments, other apparatuses for processing multiple substrates simultaneously are described. This apparatus comprises a transfer chamber assembly having one or more walls defining a transfer space, a support chuck having a substrate support surface, a seal ring having a chuck seal surface, a plurality of processing assemblies disposed within the transfer chamber assembly, and a lift assembly. The chuck seal surface is positioned around the substrate support surface of the support chuck. Each processing assembly comprises one or more processing chamber walls. One or more processing chamber walls have an upper seal surface and a lift assembly for moving the support chuck between a transfer position and a processing position. The upper seal surface forms a separation seal with the chuck seal surface when the support chuck is in the processing position, and forms a sealed processing chamber space between one or more processing chamber walls and the support chuck, which is fluidly separated from the transfer space. The transfer space is fluidly connected to the processing chamber space when the support chuck is in the transfer position. A robotic transfer device is disposed within the transfer chamber assembly and transfers substrates between a plurality of processing chambers within the transfer assembly.

[0008] In yet another embodiment, a method for processing a substrate is described. This method includes positioning the substrate and a support chuck at a first position on a robotic transfer device in a transfer space. A lift assembly is then raised and coupled to the support chuck. The support chuck is then detached from the robotic transfer device and raised to a second position by the lift assembly. The chuck sealing surface is sealed against the upper sealing surface to form a chamber space, which is fluidly separated from the transfer space. The substrate is then processed in the chamber space.

[0009] To better understand the features of this disclosure described above, a more detailed description of this disclosure, briefly summarized above, can be obtained by referring to the embodiments. Some embodiments are shown in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate typical embodiments of this disclosure and should not be considered to limit the scope of this disclosure, as this disclosure may also permit other equally valid embodiments. [Brief explanation of the drawing]

[0010] [Figure 1A] This is a plan view of a cluster tool assembly, including the transfer chamber assembly and processing assembly described herein. [Figure 1B] This is a plan view of a cluster tool assembly, including the transfer chamber assembly and processing assembly described herein. [Figure 2A] This is a schematic cross-sectional view of the transfer chamber assembly and processing assembly according to the first embodiment. [Figure 2B] This is a schematic cross-sectional view of the transfer chamber assembly and processing assembly according to the first embodiment. [Figure 3A] This is a schematic cross-sectional view of the transfer chamber assembly and processing assembly according to the second embodiment. [Figure 3B] This is a schematic cross-sectional view of the transfer chamber assembly and processing assembly according to the second embodiment. [Figure 4A] Figures 2B and 3B show schematic enlarged cross-sectional views of the interface between the seal ring and the bellows assembly. [Figure 4B] Figures 2B and 3B show schematic enlarged cross-sectional views of the interface between the seal ring and the bellows assembly. [Figure 4C] Figures 2B and 3B show schematic enlarged cross-sectional views of the interface between the seal ring and the bellows assembly. [Figure 5] Figures 2B and 3B show the modified interface between the seal ring and the bellows assembly, as well as schematic enlarged cross-sectional views of the gas inlet and gas outlet. [Figure 6A] Figures 2B and 3B show schematic enlarged cross-sectional views of the alternative interface between the seal ring and the bellows assembly. [Figure 6B] Figures 2B and 3B show schematic enlarged cross-sectional views of the alternative interface between the seal ring and the bellows assembly. [Figure 6C] Figures 2B and 3B show schematic enlarged cross-sectional views of the alternative interface between the seal ring and the bellows assembly. [Figure 6D] Figures 2B and 3B show schematic enlarged cross-sectional views of the alternative interface between the seal ring and the bellows assembly. [Figure 6E] Figures 2B and 3B show schematic enlarged cross-sectional views of the alternative interface between the seal ring and the bellows assembly. [Figure 7] This describes a method for transporting substrates within the transport space and chamber space shown in Figures 2A and 2B. [Figure 8] This describes the method for transporting substrates within the transport space and chamber space shown in Figures 3A and 3B. [Modes for carrying out the invention]

[0011] For ease of understanding, the same reference numerals have been used to indicate identical elements common to multiple figures where possible. It is assumed that components and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0012] Embodiments of this disclosure relate to apparatus for substrate processing, as well as cluster tools comprising a transfer chamber assembly and a plurality of processing assemblies. The transfer chamber assembly and processing assemblies may include processing platforms for ALD, CVD, PVD, etching, cleaning, injection, heating, annealing, and / or polishing processes. Other processing platforms may also be used in this disclosure. This disclosure generally provides substrate processing tools that offer increased flexibility in process conditions between processing assemblies within the same cluster tool.

[0013] The present disclosure includes embodiments regarding substrate processing. A substrate and optionally a support chuck can be transferred between processing assemblies within a transfer space formed by a transfer chamber assembly. A processing assembly includes a processing space in which the substrate is processed. The support chuck can optionally be removed from the lift assembly while being transferred between processing assemblies. When the substrate and the support chuck are placed on the lift assembly, the lift assembly raises the substrate and the support chuck to an upper processing position. While at the upper processing position, the surface of the processing assembly and the surface of the support chuck are sealed against each other to form a processing space that is fluidically separated. The processing space is fluidically separated from the transfer space formed by the transfer chamber assembly.

[0014] By separating the processing space from the transfer space by the movement of the lift assembly, it becomes possible to adjust each processing space to a different pressure. Thereby, even when different pressures and temperatures are required in each processing step, it becomes possible to execute different substrate processing steps within each processing assembly in the transfer chamber assembly. By using the support chuck as a sealing member within the processing assembly, the volume of the processing space is also minimized. By minimizing the processing space, the amount of process gas and purge gas required during each process is reduced. By further sealing between each processing space and the transfer space, leakage of process gas into the transfer chamber is minimized. The devices and methods utilized to form the seal between the processing space and the transfer space minimize particle contamination within the processing space and reduce the downtime of the device caused by component replacement and cleaning.

[0015] Figures 1A to 1B are plan views of cluster tool assemblies 100a and 100b including the transfer chamber assembly 150 and the processing assembly 160 described in this specification. The cluster tool assembly 100a in FIG. 1A includes a single transfer chamber assembly 150 and a plurality of front-end robot chambers 180 between the transfer chamber assembly 150 and the load lock chamber 130. The cluster tool assembly 100b in FIG. 1B includes a plurality of transfer chamber assemblies 150 and a buffer chamber 140 disposed between the transfer chamber assembly 150 and the load lock chamber 130.

[0016] In FIG. 1A, the cluster tool assembly 100a includes a front opening unified pod (FOUP) 110, a factory interface (FI) 120 adjacent to and operably connected to the FOUP 110, a load lock chamber 130 adjacent to and operably connected to the FI 120, a front-end robot chamber 180 adjacent to and operably connected to the load lock chamber 130, a spare chamber 190 adjacent to and operably connected to the front-end robot chamber 180, and a transfer chamber 150 connected to and operably connected to the front-end robot chamber 180.

[0017] The FOUP110 is used to securely fix and store the substrate not only while the substrate is placed inside, during its movement between different substrate processing units, and while the FOUP is connected to the substrate processing unit. The number of FOUP110s (four in the diagram) may vary depending on the processing performed within the cluster tool assembly 100a. The throughput of the cluster tool assembly 100a also determines, at least in part, the number of docking stations on the FI120 to which the FOUP is connected for unloading and loading substrates. The FI120 is located between the FOUP110 and the load lock chamber 130. The FI120 forms the interface between the semiconductor manufacturing equipment (Fab) and the cluster tool assembly 100a. The FI120 is connected to the load lock chamber 130, which allows substrates to be transferred from the FI120 to the load lock chamber 130 and from the load lock chamber 130 to the FI120.

[0018] The front-end robot chambers 180 are located on the same side as each of the load lock chambers 130, so that the load lock chambers 130 are located between the FI 120 and the front-end robot chambers 180. Each front-end robot chamber 180 contains a transfer robot 185. The transfer robot 185 is any robot suitable for transferring one or more substrates from one chamber to another through or via the front-end robot chambers 180. Preparation Chambers In some embodiments, as shown in Figure 1A, the transfer robot 185 in each front-end robot chamber 180 is configured to transfer a substrate from one of the load lock chambers 130 to one of the spare chambers 190.

[0019] The pre-chamber 190 is one of a pre-cleaning chamber, an annealing chamber, or a cooling chamber, depending on the desired process within the cluster tool assembly 100a. In some embodiments, the pre-chamber 190 is a plasma cleaning chamber. In yet another exemplary embodiment, the pre-chamber 190 is a Preclean II chamber, available from Applied Materials, Inc., Santa Clara, California. A vacuum pump 196 is positioned adjacent to each of the pre-chambers 190. The vacuum pump 196 is configured to evacuate the pre-chambers 190 to a predetermined pressure. In some embodiments, the vacuum pump 196 is configured to reduce the pressure in the pre-chambers 190, for example, to create a vacuum within the pre-chambers 190.

[0020] As shown in Figure 1A, two load lock chambers 130, two front-end robot chambers 180, and two spare chambers 190 are configured within the cluster tool assembly 100a. The two load lock chambers 130, two front-end robot chambers 180, and two spare chambers 190 can form two transport assemblies when arranged as shown in Figure 1A and previously described. The two transport assemblies can be spaced apart from each other and can form a mirror-like symmetry with respect to each other, so that the spare chambers 190 are located on the opposing walls of their respective front-end robot chambers 180.

[0021] The transfer chamber assembly 150 is adjacent to and operably connected to the front-end robot chamber 180 so that substrates are transferred between the transfer chamber assembly 150 and the front-end robot chamber 180. The transfer chamber assembly 150 includes a central transfer device 145 and a plurality of processing assemblies 160. The plurality of processing assemblies 160 are arranged around the central transfer device 145, radially outward from the pivot axis or central axis of the central transfer device 145 within the transfer chamber assembly 150.

[0022] Chamber pumps 165 are positioned adjacent to each of the processing assemblies 160 and are fluidically connected to each of the processing assemblies 160, resulting in a plurality of chamber pumps 165 arranged around the central transfer device 145. The plurality of chamber pumps 165 are located radially outward from the central transfer device 145 within the transfer chamber assembly 150. As shown in Figure 1A, one chamber pump 165 is fluidically connected to each of the processing assemblies 160.

[0023] In some embodiments, there may be multiple chamber pumps 165 fluidly coupled to each processing assembly 160. In yet another embodiment, one or more processing assemblies 160 do not have to have chamber pumps 165 directly fluidly coupled to themselves. In some embodiments, various numbers of chamber pumps 165 are fluidly coupled to each processing assembly 160, so that one or more processing assemblies 160 may have a different number of chamber pumps 165 than one or more other processing assemblies 160. The chamber pumps 165 enable separate vacuum evacuation of the processing areas within each processing assembly 160, so that the pressures within each processing assembly can be maintained separately from each other and separately from the pressure present in the transfer chamber assembly 150.

[0024] Figure 1A shows an embodiment having six processing assemblies 160 within a transfer chamber assembly 150. However, in other embodiments, the transfer chamber 150 may have a different number of processing assemblies 160. For example, in some embodiments, 2 to 12 processing assemblies 160 may be arranged within a transfer chamber assembly 150, such as 4 to 8 processing assemblies 160. In other embodiments, 4 processing assemblies 160 may be arranged within the transfer chamber assembly 150. The number of processing assemblies 160 affects the total footprint of the cluster tool 100a, the number of processing steps that the cluster tool 100a can perform, the total manufacturing cost of the cluster tool 100a, and the throughput of the cluster tool 100a.

[0025] Each of the processing assemblies 160 can be one of the following: PVD, CVD, ALD, etching, cleaning, heating, annealing, and / or polishing platforms. In some embodiments, all of the processing assemblies 160 are of a single type of processing platform. In other embodiments, the processing assemblies 160 include two or more different processing platforms. In one exemplary embodiment, all of the processing assemblies 160 are PVD processing chambers. In other exemplary embodiments, the processing assemblies 160 include both PVD processing chambers and CVD processing chambers. Multiple processing assemblies 160 can be modified to suit the type of processing chamber required to complete a semiconductor manufacturing process.

[0026] The central transfer device 145 is positioned approximately at the center of the transfer chamber assembly 150, so that the central axis 155 of the transfer chamber assembly 150 is aligned through the central transfer device 145. The central transfer device 145 is any suitable transfer device configured to transfer substrates between each processing assembly 160. In one embodiment, the central transfer device 145 is a central robot having one or more blades configured to transfer substrates between each processing assembly 160. In another embodiment, the central transfer device is a carousel system that moves the processing area along a circular orbital path centered on the central axis 155 of the transfer chamber assembly 150.

[0027] Figure 1B is a plan view of a cluster tool 100b with multiple transfer chamber assemblies 150 connected. The FOUP 110, FI 120, and load lock chamber 130 may be arranged similarly to the FOUP 110, FI 120, and load lock chamber 130 described above in relation to Figure 1A. The cluster tool 100b in Figure 1B further includes an FI etching apparatus 115, a buffer chamber 140, and multiple transfer chamber assemblies 150.

[0028] The FI etching apparatus 115 is positioned adjacent to the FI 120 such that the FI etching apparatus 115 is positioned on the side wall of the FI 120. The FI etching apparatus 115 may be positioned on a side wall of the FI 120 that is separate from the side wall of the FI connected to the FOUP 110 and the load lock chamber 130. The FI etching apparatus 115 may be an etching chamber. The FI etching apparatus 115 may be similar to the Centris® line of etching chambers available from Applied Materials, Inc.

[0029] A buffer chamber 140 is located between the load lock chamber 130 and the multiple transfer chamber assemblies 150, providing an isolated space between the load lock chamber 130 and the multiple transfer chamber assemblies 150 from which substrates can be transferred. The buffer chamber 140 is coupled to both the load lock chamber 130 and the multiple transfer chamber assemblies 150. As shown in Figure 1B, three transfer chamber assemblies 150 are arranged around the buffer chamber 140 and attached to the buffer chamber 140. In other embodiments, there may be one, two, or more than three transfer chamber assemblies 150 arranged around the buffer chamber 140.

[0030] The buffer chamber 140 includes at least one opening 146 along each wall of the buffer chamber 140 that contacts the transfer chamber assembly 150 or the load lock chamber 130. Each opening 146 is dimensioned to allow the passage of a substrate, a substrate chuck, or a substrate on a substrate chuck to and from the transfer chamber assembly 150. In some embodiments, there are two openings 146 along each wall of the buffer chamber 140 adjacent to the transfer chamber assembly 150. This allows two substrates to pass simultaneously from the buffer chamber 140 to the transfer chamber assembly 150, or from the transfer chamber assembly 150 to the buffer chamber 140.

[0031] The buffer chamber 140 includes one or more buffer chamber transfer robots 148. The buffer chamber transfer robots 148 move the substrate, the chuck, or both the substrate and the chuck between the transfer chamber assembly 150 and the load lock chamber 130. The buffer chamber transfer robots 148 can be any suitable substrate transfer robot.

[0032] To enable isolation of the internal space of the buffer chamber 140 from the process gas used in the processing assembly 160 of the transfer chamber assembly 150, the access between each transfer chamber assembly 150 and the opening 146 of the buffer chamber 140 are selectively sealed by respective fluid shut-off valves, such as slit valves. The fluid shut-off valves (not shown) are located inside the walls of each transfer chamber assembly 150, inside the walls of the buffer chamber 140, or as a separate assembly between the buffer chamber 140 and the transfer chamber assembly 150. Furthermore, the fluid shut-off valves may include a plate and seal assembly 292 (Figures 2A to 3B), which is pressed by a ram that is selectively operable to cover or not cover each opening 146 to seal it. The plate and seal assembly 292 thereby selectively seals or enables fluid communication between the transfer chamber assembly 150 and the buffer chamber 140, and further, when retracted from the opening 146, allows a support blade or end effector on the buffer chamber transfer robot 148 within the buffer chamber 140 to transfer the substrate through the opening 146.

[0033] The transfer chamber assembly 150 may be configured in the same way as previously described in relation to Figure 1A. This includes the arrangement and structure of the central transfer device 145, the multiple processing assemblies 160, and the chamber pumps 165 within each transfer chamber assembly 150. However, alternative embodiments of the transfer chamber assembly 150 may be used.

[0034] Figures 2A and 2B are schematic cross-sectional views of a portion of the transfer chamber assembly 150 and the processing assembly 160a according to the first embodiment. In the first embodiment, the transfer chamber assembly 150 includes a robot, such as a central transfer device 145 (Figures 1A and 1B), for transferring the substrate 200 to the substrate support surface 223 of the support chuck 224a in the processing assembly 160a. The support chuck 224a is mounted on a substrate lift assembly 220a in the processing assembly 160a. The processing assembly 160a further includes a magnetron assembly 295 and a mini processing chamber 216a.

[0035] Figure 2A shows the processing assembly 160a while the substrate lift assembly 220a is in the lowered substrate receiving position, where the substrate 200 is located below the mini processing chamber 216a. Figure 2B shows the processing assembly 160a while the substrate lift assembly is in the raised substrate processing position, where the substrate 200 is located inside the mini processing chamber 216a. In the configurations shown in Figures 2A and 2B, the support chuck 224a remains attached to the substrate lift assembly 220a both during the transfer of the substrate 200 between the processing assemblies 160 and during the substrate processing inside the mini processing chamber 216a.

[0036] The processing assembly 160a in Figure 2A includes a magnetron assembly 295, a portion of the transfer chamber space 236, a portion of the transfer chamber assembly 150, a mini processing chamber 216a, a support chuck 224a, and a substrate lift assembly 220a. The processing assembly 160 in Figure 2A shows the substrate lift assembly 220a in the substrate receiving position, with the support chuck 224a and the substrate 200 located within the transfer chamber space 236. An opening 201 and a plate and seal assembly 292 are located adjacent to the processing assembly 160a.

[0037] The opening 201 is located on the outer side wall of the transfer chamber assembly 150. The opening 201 is dimensioned to allow a substrate 200 and a robotic arm that carries the substrate 200 to pass through. The robotic arm may be a transfer robot 185 in a front-end robotic chamber 180 (Figure 1A) or a buffer chamber transfer robot 148 in a buffer chamber 140 (Figure 1B). The opening 201 is sealed from the front-end robotic chamber 180 and / or the buffer chamber 140 during the movement of the substrate 200 between the transfer chamber assembly 150 and the buffer chamber 140. The opening 201 is sealed using a plate and seal assembly 292 located outside the opening 201. In embodiments where the buffer chamber 140 is used, the opening 201 is located near and aligned with each of the openings 146 of the buffer chamber 140.

[0038] The lid 302 of the transfer chamber assembly is positioned on top of the central transfer device 145 (Figures 1A-1B). The lid 302 of the transfer chamber assembly is connected to the top surface of the transfer chamber assembly 150 and can be removed for maintenance and replacement of components within the transfer chamber assembly 150.

[0039] In some embodiments, the mini-processing chamber 216a is a physical vapor deposition (PVD) processing chamber in which a material to form a layer on a substrate 200 exposed within the mini-processing chamber 216a is sputtered from a sputtering target assembly 203. Thus, the mini-processing chamber 216a here comprises a sputtering target assembly 203, a dielectric isolator 204, a liner 206, a containment member 208, a covering 210, a magnetron assembly 295, and a lid member 296. The mini-processing chamber 216a contains a chamber space 278.

[0040] The sputtering target assembly 203 is positioned above the chamber space 278, forming a cover that surrounds the chamber space 278. There, the sputtering target assembly 203 is circular when viewed from above and has a flat, or nearly flat, top surface. The annular surface of the sputtering target assembly 203 is positioned on a dielectric isolator 204, which is a dielectric material having sufficient dielectric strength and size to electrically insulate the sputtering target assembly 203 from the liner 206.

[0041] The sputtering target assembly 203 is connected to the AC power supply 286. The AC power supply 286 supplies power to the sputtering target assembly 203 so that it is biased during substrate processing.

[0042] The dielectric isolator 204 has an annular shape such that it has a radial width and surrounds a hollow inner diameter portion. The dielectric material of the dielectric isolator 204 is any material capable of electrically insulating the sputtering target assembly 203 from the liner 206 and also providing thermal insulation between them. The liner 206 here includes a portion that extends at least partially below the dielectric isolator 204, forming a support ledge that physically supports the dielectric isolator 204. The liner 206 is in mechanical contact with at least a portion of the upper surface 218 of the transfer chamber assembly 150. The liner 206 is also in contact with a portion of the containment member 208, which provides shielding between the flux of the sputtering material from the sputtering target assembly 203 and the inner opposing side wall 217 of the liner 206.

[0043] The sputtering target assembly 203 is positioned between the magnetron space 299, defined by the magnetron support wall 289 and the lid member 296, and the chamber space 278. The edges of the sputtering target 202 within the sputtering target assembly 203 are located inside the containment member 208 and the dielectric isolator 204. The sputtering target 202 consists of the material deposited on the surface of the substrate 200 during sputtering. The sputtering target 202 may be a copper sputtering target for deposition as a seed layer within high aspect ratio features formed on the substrate 200. The sputtering target 202 may also include other materials, such as a copper-doped aluminum sputtering target. Alternatively, the sputtering target 202 may consist of a liner / barrier material used to cover the surface of trenches, vias, or contact openings within the dielectric layer, and the material deposited on the surface of the trenches, vias, or contact openings may consist of the target material, and possibly a compound formed from the target material. For example, a tantalum layer, with a tantalum nitride layer on top, may be formed on the surface of a trench, via, or contact opening by first sputtering the target in an inert gas environment and then adding nitrogen into the process space. Alternatively, a first metal of a first target material is sputtered onto a substrate 200 including the surface of a trench, via, or contact opening. The substrate 200 is then moved to a second chamber having the same or a different target composition, and a reactant such as nitrogen is introduced into the process space to form a compound layer on top of a non-compound layer.

[0044] The liner 206 is an annular member. The liner 206 includes a main support portion 225 located on the upper surface 218 of the transfer chamber assembly 150. The main support portion 225 includes an upper annular ledge portion on which the dielectric isolator 204 is located. The dielectric isolator 204 is physically supported by the main support portion 225 of the liner 206. The liner 206 has a downwardly projecting annular portion 226. The downwardly projecting annular portion 226 is located below the main support portion 225 of the liner 206. The downwardly projecting annular portion 226 is a vertical portion extending from the bottom surface of the main support portion 225. A horizontal ring portion 227 of the liner 206 is located at the lower end of the downwardly projecting annular portion 226. The horizontal ring portion 227 extends radially inward from the downwardly projecting annular portion 226 with respect to the central axis 205 of the processing assembly. The horizontal ring portion 227 is located below the lower annular portion 272 of the containment member 208. In the embodiments shown in Figures 2A and 2B, the horizontal ring portion 227 of the liner 206 is located below the portion of the lower annular portion 272 of the containment member 208. In some embodiments, the horizontal ring portion 227 of the liner 206 may be located below the entire lower annular portion 272 of the containment member 208.

[0045] The containment member 208 includes an upper shield body 222 and a lower shield body 229. The upper shield body 222 is a cylindrical body. The upper shield body 222 is positioned radially inward from the main support portion 225 of the liner 206 with respect to the central axis 205 of the processing assembly. The upper shield body 222 is positioned on top of the lower shield body 229. The lower shield body 229 is a U-shaped body.

[0046] The lower shield body 229 includes a first cylindrical lower section 221, a second cylindrical lower section 220, and a lower annular section 272. The first cylindrical lower section 221 is positioned radially outward of the upper shield body 222 with respect to the processing assembly central axis 205. The first cylindrical lower section 221 is connected to the bottom of the upper shield body 222. The first cylindrical lower section 221 is a ring and extends vertically downward from the first upper shield body 222. The lower annular section 272 is connected to the tip of the first cylindrical lower section 221 furthest from the upper shield body 222. The lower annular section 272 is a horizontal member extending radially inward from the first cylindrical lower section 221. The lower annular section 272 is connected to the first cylindrical lower section 221 and the second cylindrical lower section 220. The lower annular section 272 is connected to the lower end of the second cylindrical lower section 220. The second cylindrical lower section 220 is a vertical cylindrical wall positioned above the lower annular section 272. The second cylindrical lower section 220 is positioned radially inward of the first cylindrical lower section 221 and is concentric with at least a portion of the first cylindrical lower section 221.

[0047] A covering 210 is positioned on the second cylindrical lower portion 220 of the lower shield body 229. The covering 210 prevents unwanted accumulation on the edge ring 228 and on the sides of the support chuck 224a or the lift assembly 220a. The covering 210 includes a lower member 215 and an upper member 214. The upper member 214 has a horizontal contact surface 274. The horizontal contact surface 274 is dimensioned to contact the edge ring 228 surrounding the support chuck 224a when the support chuck 224a and the lift assembly 220a are in the raised position as shown in Figure 2B.

[0048] The bellows assembly 250 is located below the covering 210. The bellows assembly 250 is connected to the lower shield body 229 and is positioned radially inward from the liner 206 and the upper shield body 222 of the containment member 208 with respect to the processing assembly central axis 205.

[0049] A magnetron assembly 295 is positioned above a sputtering target assembly 203. The magnetron assembly 295 includes a number of magnets 294 supported by a base plate 293 connected to a shaft 291, which is axially aligned with the central axis 205 of the mini-processing chamber. The shaft 291 is connected to a motor 287 located on the opposite side of the lid member 296 of the magnetron assembly 295. The motor 287 rotates the shaft 291 so that the magnets 294 rotate within the magnetron space 299. The magnetron space 299 is defined by the lid member 296, the magnetron support wall 289, and the sputtering target assembly 203. In one implementation, the magnets form a magnetic field within the mini-processing chamber 216a near the front of the sputtering target assembly 203 and maintain the plasma generated therein, which causes a considerable flux of ionized gas atoms to strike the sputtering target assembly 203, resulting in sputtering of the target material. The magnet is rotated around the central axis 205 of the mini processing chamber to improve the uniformity of the magnetic field across the surface of the sputtering target assembly 203.

[0050] A fluid is supplied through the magnetron space 299 to control the temperature of the magnet 294 and the sputtering target assembly 203. The fluid is supplied into the magnetron space 299 by a fluid supply unit 297 and exits the magnetron space by a fluid extractor 298. The fluid supply unit 297 and the fluid extractor 298 are located on either side of the magnetron assembly 295, so that the fluid flows through the magnetron space 299, across the top of the sputtering target assembly 203, and over the magnet 294. The fluid can be DI water or other suitable cooling fluid.

[0051] The magnetron assembly 295, AC power supply 286, sputtering target assembly, and containment member 208 form the process component 285. The process component 285 can be selectively modified to perform various processes within the chamber space 278. In some embodiments, the process component 285 may be modified to include a showerhead assembly, a remote plasma source, multiple heating elements, or sensors. In the embodiments shown in Figures 2A to 6E, the process component 285 is configured to enable a PVD process. In alternative embodiments, the process component 285 is modified so that processing assemblies 160a, 160b can perform a CVD process, an ALD process, an etching process, an annealing process, or a cleaning process.

[0052] The support chuck 224a and substrate lift assembly 220a together include an edge ring 228, a stepped sealing ring 264, a lift assembly shaft 238, a lift upper part 230, an electrical line 240, a rear gas outlet 243, and a gas line 242. The substrate 200 is placed on the substrate support surface 223 of the support chuck 224a.

[0053] The support chuck 224a supports the substrate 200 and the edge ring 228. In the illustrated embodiment, the support chuck 224a is an electrostatic chuck so that it is biased by a power supply such as a power supply 244. By biasing the support chuck 224a, the substrate 200 is chucked and held in a predetermined position on the substrate support chuck 224a during processing and movement of the lift assembly 220a. The support chuck 224a may also include a heating element (not shown) and a thermal sensor (not shown). The heating element and thermal sensor can also be connected to the power supply 244 and can help maintain a uniform and controlled temperature across the substrate support surface 223 and the substrate 200 placed thereon.

[0054] The lift assembly 220a includes actuators 246, such as one or more motors. The actuators 246 enable the vertical and rotational movement of the support chuck 224a, thereby allowing the support chuck 224a to move vertically up and down through the transfer chamber space 236 and to rotate around the central axis 205.

[0055] The support chuck 224a has a planar upper surface that forms the substrate support surface 223. The support chuck 224a has an outer ledge 266 positioned around the substrate support surface 223 of the support chuck 224a. The outer ledge 266 is offset vertically from the substrate support surface 223. The outer ledge 266 is sized to receive an edge ring 228. The edge ring 228 is positioned radially outward from the substrate support surface 223 of the support chuck 224a. The edge ring 228 is sized to contact the horizontal contact surface 274 of the covering ring 210 when the lift assembly 220a and the support chuck 224a are in the raised processing position.

[0056] The support chuck 224a is positioned at the top of the lift assembly 220a, thereby positioning the support chuck 224a above the top of the lift top 230. The lift top 230 is positioned below the entire bottom surface 261 of the support chuck 224a. The lift top 230 is positioned above and surrounding the lift assembly shaft 238. The lift assembly shaft 238 is a vertical shaft. Inside the lift assembly shaft 238 are the electrical lines 240 and the gas lines 242. The electrical lines 240 may include multiple electrical connections such as wires. The electrical lines 240 connect the support chuck 224a to the power supply 244. The electrical lines 240 and the power supply 244 supply power to the support chuck 224a for biasing and heating. The power supply 244 can also supply power for moving the lift assembly 220a.

[0057] Gas line 242 is connected to purge gas source 241. Gas line 242 is in fluid communication with rear gas outlet 243. Purge gas supplied to gas line 242 by purge gas source 241 flows through rear gas outlet 243 and supplies rear gas to the bottom surface of substrate 200 placed on substrate support surface 223.

[0058] The stepped sealing ring 264 is positioned radially outward of the support chuck 224a and connected to the support chuck 224a when viewed with respect to the central axis 205 of the processing assembly. The stepped sealing ring 264 is positioned beneath the bellows assembly 250 and has an annular surface area that overlaps with the bellows assembly 250, so that the stepped sealing ring 264 forms a seal together with the bellows assembly 250 when the support chuck 224a and lift assembly 220a are raised to the processing position as shown in Figure 2B.

[0059] In some embodiments, a lift pin (not shown) may be located in a lift pin hole formed through the support chuck 224a, the upper lift portion 230 of the lift assembly 220a, and the main shield portion 251 of the lower seal shield 232 of the chuck seal assembly 235. The lift pin may extend to the substrate support surface 223. The lift pin may be configured to lift and lower the substrate 200 between processing steps or when the substrate is loaded or unloaded from the transfer chamber assembly 150. In some embodiments, other substrate transfer mechanisms may be used instead of the lift pin. In this configuration, the lift pin is omitted to reduce the leakage of process gas between the transfer chamber space 236 and the chamber space 278 during substrate processing.

[0060] Figure 2B contains the same components as Figure 2A. Figure 2B shows the processing assembly 160a when the lift assembly 220a and support chuck 224a are in the upper position or processing position. When the lift assembly 220a is in the upper position, the stepped seal ring 264 and the bellows assembly 250 are in contact with each other to form a seal. When the lift assembly 220a is moved to the upper position, the stepped seal ring 264 is pushed upward and comes into contact with the surface of the bellows assembly 250. The edge ring 228 also moves upward and comes into contact with the horizontal contact surface 274 of the covering ring 210. The sealing surfaces of both the stepped seal ring 264 and the bellows assembly 250 are parallel to the transport plane of the substrate 200 passing through the transport chamber space 236 between the processing assemblies 160. The transport plane of the substrate 200 is a horizontal plane parallel to the substrate support surface 223. The substrate 200 is transported between processing assemblies along a transfer plane by a robot positioned in a transfer chamber space 236, such as a central transfer device 145.

[0061] The stepped seal ring 264, bellows assembly 250, support chuck 224a, containment member 208, and sputtering target assembly 203 define the processing chamber space 278 when the lift assembly 220a is raised to the substrate processing position. While in the upper position, the process is performed on the substrate 200 within the chamber space 278.

[0062] Figures 3A to 3B are schematic cross-sectional views of a portion of the transfer chamber assembly 150 and the processing assembly 160b according to the second embodiment. Figures 3A to 3B show the magnetron assembly 295, AC power supply 286, opening 201, plate and seal assembly 292, transfer chamber space 236, transfer chamber assembly 150, mini processing chamber 216b, support chuck 224b, and substrate lift assembly 220b. The magnetron assembly 295, AC power supply 286, plate and seal assembly 292, transfer chamber space 236, and transfer chamber assembly 150 are the same as those depicted in Figures 2A to 2B. The opening 201 is dimensioned to allow the substrate 200, the support chuck 224b, or both the substrate 200 and the support chuck 224b to pass through, thereby allowing the entire cluster tools 100a, 100b to be moved with the substrate 200 resting on the support chuck 224b.

[0063] The processing assembly 160b includes a mini processing chamber 216b, a magnetron assembly 295, a portion of the transfer chamber space 236, a portion of the transfer chamber assembly 150, a support chuck 224b, and a substrate lift assembly 220b. The mini processing chamber 216b in Figures 3A-3B includes a sputtering target assembly 203, a dielectric isolator 204, a liner 206, a containment member 208, a covering 210, a magnetron assembly 295, and a lid member 296. Inside the mini processing chamber 216b is a chamber space 278. The sputtering target assembly 203, dielectric isolator 204, liner 206, containment member 208, covering 210, magnetron assembly 295, and lid member 296 are the same as those depicted in Figures 2A-2B.

[0064] The support chuck 224b, central transfer device 145, and substrate lift assembly 220b in the embodiments shown in Figures 3A to 3B differ from the support chuck 224a, central transfer device 145, and substrate lift assembly 220a in the embodiments shown in Figures 2A to 2B.

[0065] In Figure 3A, the support chuck 224b and the lift assembly 220b are shown in the substrate receiving position. While in the substrate receiving position, the support chuck 224b and the substrate 200 placed on the substrate support surface 223 of the support chuck 224b are separated from the lift assembly 220b and can be transported through the transport chamber assembly 150 by the central transport device 145 (Figures 1A-1B). The central transport device 145 moves the substrate 200 and the support chuck 224b along a trajectory path around the central axis 155 of the transport chamber assembly 150, transporting the substrate 200 placed on the support chuck 224b to various processing assemblies 160.

[0066] Similar to the embodiments shown in Figures 2A and 2B, the substrate lift assembly 220b has a support chuck 224b located above the upper lift portion 230. An edge ring 228 is placed on the support chuck 224b around the outer circumference of the substrate 200. A stepped seal ring 264 is arranged around the circumferential surface of the support chuck 224b. The lift assembly 220b includes a lift assembly shaft 238, an electrical line 240, a rear gas outlet 243, and a gas line 242. The substrate 200 is placed on the substrate support surface 223 of the support chuck 224b.

[0067] The support chuck 224b is located at the top of the substrate lift assembly 220b. The support chuck 224b supports the substrate 200 and the edge ring 228. The support chuck 224b is an electrostatic chuck so that it can be biased by a power supply such as a power supply 244. By biasing the support chuck 224b, the substrate 200 is chucked and held in a predetermined position on the support chuck 224b during processing and movement of the substrate lift assembly 220b. The support chuck 224b may also include a heating element (not shown) and a thermal sensor (not shown). The heating element and temperature sensor can also be connected to the power supply 244 and can help maintain a uniform and controlled temperature across the substrate support surface 223 and the substrate 200 placed thereon.

[0068] The support chuck 224b is connected to one or more actuators 246, such as motors. The actuators 246 enable the vertical and rotational movement of the support chuck 224b, allowing it to move vertically up and down through the transfer chamber space 236 and to rotate around the central axis 205.

[0069] The support chuck 224b has a planar upper surface that forms the substrate support surface 223. The support chuck 224b has an outer ledge 266 positioned around the substrate support surface 223 of the support chuck 224b. The outer ledge 266 is offset vertically from the substrate support surface 223. The outer ledge 266 is sized to receive an edge ring 228. The edge ring 228 is positioned radially outward from the substrate support surface 223 of the support chuck 224b. The edge ring 228 is sized to contact the horizontal contact surface 274 of the covering ring 210 when the support chuck 224b is in the raised processing position.

[0070] The support chuck 224b further includes a lower surface 308. The lower surface 308 is on the opposite side of the substrate support surface 223 and is parallel to the substrate support surface 223. The lower surface 308 includes a chuck transfer connector 310, a chuck lift assembly connector 312, and a rear gas connector 314. The chuck transfer connector 310 is located on the lower surface 308 and functions as a connection point between the support chuck 224b and a transfer device connector 306 located on the central transfer device 145. The chuck transfer connector 310 serves to electrically and physically connect the support chuck 224b to the central transfer device 145. The chuck transfer connector 310 supplies power to the support chuck 224b while it is located on the central transfer device 145. The chuck transfer connector 310 also serves to secure the support chuck 224b to the central transfer device 145 while it is being transferred within the transfer chamber assembly 150, for example, from one processing assembly 160 to another processing assembly 160. In some embodiments, there are multiple chuck transfer connectors 310, such as two to five chuck transfer connectors 310.

[0071] The rear gas connection portion 314 is in fluid communication with the rear gas outlet 243. The rear gas connection portion 314 and the rear gas outlet 243 are located in the center of the support chuck 224b, so that they are positioned through the center of the support chuck 224b. The rear gas connection portion 314 is connected to and positioned from the bottom side of the rear gas outlet 243 so that the rear gas connection portion 314 is located below the lower surface 308 of the support chuck 224b.

[0072] The central transfer device 145 includes a top surface 304, a transfer device connector 306, and a device opening 325. The central transfer device 145 transfers the substrate 200 and / or support chuck 224 between processing assemblies 160 in the transfer chamber space 236. The central transfer device 145 moves in a horizontal transfer plane parallel to the top surface 304 of the central transfer device 145. The transfer device connector 306 is located on the top surface 304 of the central transfer device 145 and surrounds the device opening 325. The transfer device connector 306 is aligned with a chuck transfer connector 310 on the support chuck 224b. In some embodiments, there are multiple transfer device connectors 306, such as 2 to 5 transfer device connectors 306. The transfer device connector 306 is electrically connected to a transfer device power supply 330. The transfer device power supply 330 supplies power to chuck the substrate 200 to the support chuck 224b while the support chuck 224b and the substrate 200 are being transferred via the transfer chamber assembly 150. Chucking the substrate 200 while the support chuck 224b is being transferred holds the substrate 200 in place on the substrate support surface 223, preventing damage to the back surface of the substrate 200.

[0073] The rear gas connection 314 and the chuck lift assembly connection 312 are not connected to the central transfer device 145, and are located above the device opening 325 while the support chuck 224b is positioned on the central transfer device 145. The rear gas connection 314 and the chuck lift assembly connection 312 are located radially inward of the transfer device connection 306 with respect to the central axis 205 of the processing assembly.

[0074] In Figure 3B, the support chuck 224b is positioned on the lift assembly 220b, thereby positioning the support chuck 224b on the lift top 230. The lift top 230 is positioned on and surrounds the lift assembly shaft 238. The lift assembly shaft 238 is a vertical shaft. Electrical lines 240 and gas lines 242 are located within the lift assembly shaft 238. The electrical lines 240 may include multiple electrical connections such as wires. The electrical lines 240 connect the support chuck 224b to the power supply 244. The electrical lines 240 and the power supply 244 supply power to the support chuck 224b for biasing and heating. The power supply 244 can also supply power to the actuator 246 for the movement of the lift assembly 220b.

[0075] Gas line 242 is connected to purge gas source 241. Gas line 242 is fluidly connected to rear gas outlet 243 via rear gas connection part 314. Rear gas connection part 314 is connected to lift assembly 220b via gas connection receiver 326. Gas connection receiver 326 is placed on the upper surface 320 of the upper part 230 of the lift. Once rear gas connection part 314 is connected to gas connection receiver 326, purge gas source 241 is fluidly connected to rear gas outlet 243. The purge gas supplied to gas line 242 by purge gas source 241 flows through rear gas outlet 243 and supplies rear gas to the bottom surface of the substrate 200 placed on the substrate support surface 223.

[0076] The lift assembly 220b further includes a chuck connector 318. The chuck connector 318 is located on the upper surface 320 of the lift upper portion 230 of the lift assembly 220b. The chuck connector 318 is electrically connected to a power supply 244 by an electrical line 240. The chuck connector 318 supplies power to the support chuck 224b when the support chuck 224b is connected to the lift assembly 220b by the chuck connector 318 and the lift assembly connector 312. The chuck connector 318 and the lift assembly connector 312 are coupled to each other when the lift assembly 220b rises from the lower receiving position to the central transfer device 145, passes through the device opening 325, and contacts the lift assembly connector 312. In this case, the support chuck 224b is separated from the central transfer device 145 while the lift assembly 220b rises through the device opening 325 and moves to the processing position shown in Figure 3B.

[0077] The support chuck 224b is connected to the lift assembly 220b by the coupling of the lift assembly connection part 312 and the chuck connection part 318, and by the coupling of the rear gas connection part 314 and the gas connection receiver 326. When the lift assembly 220b is raised, the lift assembly connection part 312 and the rear gas connection part 314 are coupled to the chuck connection part 318 and the gas connection receiver 326, so that the lift assembly connection comes into contact with the lift assembly connection part 318 and the rear gas connection part 314 comes into contact with the gas connection receiver 326.

[0078] The stepped sealing ring 264 is positioned radially outward of the support chuck 224b and connected to the support chuck 224a when viewed with respect to the central axis 205 of the processing assembly. The stepped sealing ring 264 is positioned beneath the bellows assembly 250 and has an annular surface area that overlaps with the bellows assembly 250, so that the stepped sealing ring 264 forms a seal with the bellows assembly 250 when the support chuck 224b and lift assembly 220b are raised to the processing position, as shown in Figure 3B. While the support chuck 224b is positioned on the central transfer device 145, the stepped sealing ring 264 is in contact with the upper surface 316 of the central transfer device 145. In some embodiments, the stepped seal ring 264 supports at least a portion of the weight of the support chuck 224b while the lift assembly 220b is in the lower transfer position, and supports the support chuck 224b in the transfer chamber assembly 150 during the transfer of the support chuck 224b and the substrate 200.

[0079] In some embodiments, a lift pin (not shown) may be located in a lift pin hole formed through the support chuck 224b, the upper lift portion 230 of the lift assembly 220b, and the main shield portion 251 of the lower seal shield 232 of the chuck seal assembly 235. The lift pin may extend to the substrate support surface 223. The lift pin is configured to lift and lower the substrate 200 between processing steps or when the substrate is loaded or unloaded from the transfer chamber assembly 150. In some embodiments, other substrate transfer mechanisms may be used instead of the lift pin. In this configuration, the lift pin is omitted to reduce the leakage of process gas between the transfer chamber space 236 and the chamber space 278 during substrate processing. In embodiments such as those disclosed herein, the support chuck 224a and the substrate 200 are transferred into and out of the transfer chamber space 236 using a robot with chucking capabilities similar to those of the central transfer device 145. In some embodiments, the lift pins are formed to lift at least a portion of the support chuck 224b from the lift assembly 220b together with the substrate 200. The central transfer device 145 remains located within the processing assembly 160b while the substrate 200 is processed in the chamber space 278. In some embodiments, the central transfer device 145 is a carousel device that transfers multiple substrates 200 between the processing assemblies 160 of the transfer chamber assembly 150. The central transfer device 145 is configured to remain in a lower transfer position during the vertical movement of the lift assembly 220b and during the processing of the substrate 200, so that the central transfer device 145 remains in place while the support chuck 224b and the substrate 200 are transferred vertically to the processing position during substrate processing.

[0080] Embodiments in Figures 3A and 3B allow for the removal of the support chuck 224b from the substrate lift assembly 220b. The support chuck 224b is coupled to an arm of the central transfer device 245 while the substrate 200 and the support chuck 224b are being transferred between the processing assemblies 160. Coupling the support chuck 224b together with the substrate 200 to the central transfer device 245 reduces wear on the upper surface of the support chuck 224b, allowing the support chuck 224b to be used for a longer period of time before being replaced or maintained. It has also been found that holding the substrate 200 on the support chuck 224b reduces damage to the back surface of the substrate 200, because the substrate 200 is lifted from and placed on the support chuck 224b less frequently. The sealing surfaces of both the stepped seal ring 264 and the bellows assembly 250 are parallel to the transfer plane through which the substrate 200 passes in the transfer chamber space 236 between the processing assemblies 160.

[0081] Figures 4A to 4C are schematic enlarged cross-sectional views of the interface between the seal ring 264 and the bellows assembly 250 as shown in Figures 2B and 3B. The interface between the edge ring 228 and the covering ring 210 is also shown. Figure 4A shows the support chucks 224a-b in the first position. Figure 4B shows the support chucks 224a-b in the second position. Figure 4C shows the support chucks 224a-b in the third position.

[0082] In Figure 4A, the first position of the support chucks 224a-b is below the processing position, so that the seal ring 264 is not yet in contact with the bellows assembly 250, and the bellows assembly 250 is neither compressed nor extended.

[0083] The stepped seal ring 264 includes an outer ledge portion 402 and a stepped portion 404. The inner radial wall 406 of the stepped seal ring 264 is positioned adjacent to and in contact with the outer radial wall 408 of the support chucks 224a-b. The outer ledge portion 402 is a horizontal ledge extending radially outward from the stepped portion 404 of the stepped seal ring 264. The stepped portion 404 extends vertically upward from the chuck seal surface 422 of the outer ledge portion 402.

[0084] The bottom surface 428 of the stepped seal ring 264 is the bottom surface of both the outer ledge portion 402 and the stepped portion 404. The bottom surface 428 is coplanar with the chuck bottom surface 432. The chuck bottom surface 432 may be the lower surface 308 of the support chuck 224b in Figures 3A to 3B or the bottom surface 261 of the support chuck 224a in Figures 2A to 2B.

[0085] The upper surface 430 of the stepped seal ring 264 is the upper surface of the stepped portion 404. The upper surface 430 is coplanar with the outer ledge 266 of the support chuck 224a-b. The edge ring 228 is partially positioned on the upper surface 430 of the stepped seal ring 264. The chuck seal surface 422 is the upper surface of the outer ledge portion 402. The chuck seal surface 422 is a horizontal plane. The chuck seal surface 422 is offset vertically from the upper surface 430 of the stepped seal ring 264. The stepped seal ring 264 can be made of metal or ceramic material, so that the surface of the stepped seal ring 264 can be made of metal or ceramic material. When using a metal material, the stepped seal ring 264 can be made of aluminum or anodized aluminum material, stainless steel material, or Inconel alloy material. Stainless steel material can be 6000 series aluminum, such as 6060 or 6061 aluminum. When using ceramic materials, the ceramic material may be aluminum oxide, aluminum nitride, or quartz (SiO2). The chuck seal surface 422 has a surface roughness of about 10Ra or less, for example, about 2Ra to about 10Ra, or for example, about 4Ra to about 8Ra.

[0086] The edge ring 228 is positioned on the support chucks 224a-b and the stepped seal ring 264, so that the bottom surface 438 of the edge ring is positioned on the top surface 430 of the stepped seal ring and the outer ledge 266 of the support chucks 224a-b. The edge ring 228 includes an inner top surface 436, an intermediate top surface 424, and an outer top surface 434. The inner top surface 436 is positioned radially inward from both the intermediate top surface 424 and the outer top surface 434. The intermediate top surface 424 is positioned radially inward from the outer top surface 434. The intermediate top surface 424 is a curved top surface, so that it forms a groove between the inner top surface 436 and the outer top surface 434. The inner top surface 436 is coplanar with the outer top surface 434. The inner top surface 436 is coplanar with the substrate support surface 223. The outer upper surface 434 is sized to receive the horizontal contact surface 274 of the upper member 214 of the covering 210.

[0087] The bellows assembly 250 includes an upper bellows ring 410, a bellows 412, and a lower bellows ring 414. The bellows 412 is positioned between the upper bellows ring 410 and the lower bellows ring 414. The upper bellows ring 410 is positioned above the lower bellows ring 414. The upper bellows ring 410 is positioned radially inward from the second cylindrical lower portion 220 of the containment member 208.

[0088] The upper bellows ring 410 has an upper sealing surface 420 positioned on the bottom surface of the upper bellows ring 410. The upper sealing surface 420 is shaped to form a separation seal with the chuck sealing surface 422 of the step sealing ring 264. The upper sealing surface 420 is parallel to the chuck sealing surface 422 of the step sealing ring 264 and has an annular surface that overlaps with at least a portion of the annular surface of the chuck sealing surface 422 of the step sealing ring 264. The upper bellows ring 410 can be made of a metallic material, so the surface of the upper bellows ring 410 can be made of aluminum, stainless steel, or Inconel. Aluminum can be anodized aluminum. Stainless steel materials can be 6000 series stainless steels, such as 6060 or 6061 stainless steel. The upper sealing surface 420 has a surface roughness of about 10 Ra or less, for example, about 2 Ra to about 10 Ra, or for example, about 4 Ra to about 8 Ra. According to the stepped sealing ring 264, the upper sealing surface 420 and the chuck sealing surface 422 can be made of the same material or different material, thereby forming a seal between the same material or different material. The materials of the stepped sealing ring 264 and the chuck sealing surface 422 may be selected to improve the seal between the upper sealing surface 420 and the chuck sealing surface 422, or to reduce the possibility of deformation of the chuck sealing surface 422.

[0089] The chuck seal surface 422 is parallel to the bottom surface of the sputtering target 202. As shown in Figures 2A-2B and 3A-3B, the substantially parallel orientation / alignment of the chuck seal surface 422, the upper seal surface 420, the substrate support surface 223, and the bottom surface of the sputtering target 202 makes it possible to form a repeatable and reliable seal, while also making it possible to easily form and / or maintain angle adjustments between the substrate support surface 223 and the bottom surface of the sputtering target 202 during processing. The chuck seal surface 422 and the upper seal surface 420 are also parallel to the transfer plane of the substrate and / or support chuck 224b. The transfer plane has been described above and is the horizontal plane of transfer between processing assemblies 160.

[0090] The lower bellows ring 414 is connected to the lower annular portion 272 of the containment member 208. The lower bellows ring 414 has an upper surface 418 that is positioned in contact with the lower surface 416 of the lower annular portion 272 of the containment member 208. The upper surface 418 of the lower bellows ring 414 is coupled to the lower surface 416 of the lower annular portion 272 of the containment member 208.

[0091] The bellows 412 is positioned between the upper bellows ring 410 and the lower bellows ring 414, thereby attaching the bellows 412 to the upper surface 418 of the lower bellows ring 414 and the upper sealing surface 420 of the upper bellows ring 410. The bellows 412 forms a barrier between the upper bellows ring 410 and the lower bellows ring 414, thereby preventing gas from passing through the bellows 412. The bellows 412 has a spring constant (k) of about 50 lbf / in to about 80 lbf / in, for example, about 55 lbf / in to about 75 lbf / in, for example, about 60 lbf / in to about 70 lbf / in. As will be described later, in some embodiments, the spring constant of the bellows 412 is selected so that a desired sealing force is achieved within a desired range of extension of the bellows 412. In some embodiments, the spring constant (k) of the bellows 412 varies according to the temperature of the process performed in the chamber space 278. The temperature of the bellows 412 changes with the temperature in the chamber space 278. In some embodiments, when the operating temperature in the chamber space 278 is between approximately 350°C and approximately 600°C, the spring constant of the bellows 412 is between approximately 55 lbf / in and approximately 75 lbf / in, for example, approximately 60 lbf / in and approximately 70 lbf / in. In other embodiments, when the operating temperature of the chamber space 278 is between approximately 150°C and approximately 250°C, the spring constant of the bellows 412 is between approximately 35 lbf / in and approximately 55 lbf / in, for example, approximately 40 lbf / in and approximately 50 lbf / in. In yet another embodiment, when the operating temperature in the chamber space 278 is about 20°C to about 150°C, the spring constant of the bellows 412 is about 15 lbf / in to about 35 lbf / in, for example, about 20 lbf / in to about 30 lbf / in. The change in the spring constant of the bellows 412 over various temperature ranges is due to the change in the Young's modulus of the material. The bellows 412 can also expand or contract thermally.

[0092] The bellows 412 of the bellows assembly 250 is configured to conform in at least one direction, such as the vertical direction (i.e., the Z direction), and is configured to prevent gas from passing through the bellows 412 during processing. The bellows assembly 250 can be a stainless steel or Inconel bellows assembly with both ends welded to an upper bellows ring 410 and a lower bellows ring 414. The flexible nature of the bellows assembly 250 allows it to accommodate any misalignment or difference in planarity between the chuck seal surface 422 of the stepped seal ring 264 and the upper seal surface 420 of the processing chamber wall, thereby enabling the formation of a reliable and repeatable seal on the upper seal surface 420. In the embodiments shown in Figures 2 to 5, the bellows assembly 250 is an elongated bellows assembly, and the bellows 412 elongates while sealing the processing chamber space 278.

[0093] While in the first position in Figure 4A, the stepped seal ring 264 does not apply any force to the upper seal surface 420. When there is no force between the stepped seal ring 264 and the upper seal surface 420, there is no seal between the chamber space 278 and the transfer chamber space 236. In the first position in Figure 4A, the chamber space 278 and the transfer chamber space 236 are in fluidic communication. When the chamber space 278 and the transfer chamber space 236 are in fluidic communication, gas supplied through the process gas inlet 426 may leak into the transfer chamber space 236.

[0094] In the first position in Figure 4A, the bellows 412 has a length of approximately 1.1 inches to 1.7 inches, for example, approximately 1.2 inches to 1.6 inches, for example, approximately 1.3 inches to 1.5 inches. The bellows 412 is in a relaxed state, and there is no force from the support chucks 224a-b that would affect the length of the bellows.

[0095] In Figure 4B, the support chucks 224a-b are in the second position, which causes the stepped seal ring 264 to contact the upper sealing surface 420 of the upper bellows ring 410. The second position is a vertical position between the first position in Figure 4A and the third position in Figure 4C.

[0096] In addition to the stepped seal ring 264 contacting the upper sealing surface 420 of the upper bellows ring 410, the outer upper surface 434 of the edge ring 228 is positioned in contact with the horizontal contact surface 274 of the covering ring 210. The covering ring 210 protects the bellows assembly 250 from process radicals in the chamber space 278. Contact between the covering ring 210 and the edge ring 228 enhances the protection of the bellows assembly.

[0097] When the support chucks 224a-b are raised to the second position, the upper bellows ring 410 is pushed upward, extending the bellows 412. The edge ring 228, which is in contact with the covering 210, also pushes the covering 210 upward. When the covering 210 is raised, the bottom surface 454 of the lower member 215 of the covering 210 is vertically below the top surface 455 of the second cylindrical lower part 220 of the containment member 208. The fact that the bottom surface 454 of the lower member 215 is vertically below the top surface 455 of the second cylindrical lower part 220 of the containment member 208 ensures that the bellows 412 of the bellows assembly 250 is reliably protected from process radicals.

[0098] In the second position in Figure 4B, the bellows 412 extends to a length of approximately 1.2 inches to approximately 1.8 inches, for example, from approximately 1.3 inches to approximately 1.7 inches, and for example, from approximately 1.4 inches to approximately 1.6 inches.

[0099] The stepped seal ring 264 contacts the upper sealing surface 420 of the upper bellows ring 410, thereby applying a small force 452 to the upper sealing surface 420. This small force 452 provides at least a partial seal between the chamber space 278 and the transfer chamber space 236. The seal between the chamber space 278 and the transfer chamber space 236 allows for the execution of several processes that do not require a pressure different from the pressure in the transfer chamber space 236. In addition, purging of the chamber space 278 can be initiated while the support chucks 224a-b are lifted to their final processing positions.

[0100] Figure 4C shows that the support chucks 224a-b are in a third position higher than the second position, causing the stepped seal ring 264 to contact the upper sealing surface 420 of the upper bellows ring 410, and that the support chucks 224a-b subsequently move upward, extending the bellows 412. The third position is a vertical position higher than both the first position in Figure 4A and the second position in Figure 4B.

[0101] In addition to the stepped seal ring 264 contacting the upper sealing surface 420 of the upper bellows ring 410, the outer upper surface 434 of the edge ring 228 is positioned in contact with the horizontal contact surface 274 of the cover ring 210.

[0102] When the support chucks 224a-b are raised to the third position, the upper bellows ring 410 is pushed upward, and the bellows 412 extends to a greater extension point than the second position. The edge ring 228, which is in contact with the covering 210, also pushes the covering 210 upward. When the covering 210 is raised, the bottom surface 454 of the lower member 215 of the covering 210 is still vertically below the top surface 455 of the second cylindrical lower part 220 of the containment member 208.

[0103] In the third position in Figure 4C, the bellows 412 extends from approximately 1.7 inches to approximately 2.3 inches, for example from approximately 1.8 inches to approximately 2.2 inches, and for example from approximately 1.9 inches to approximately 2.1 inches. The total stroke of the bellows 412 from the first position in Figure 4A to the third position in Figure 4C is approximately 0.5 inches to approximately 1.1 inches, for example from approximately 0.6 inches to approximately 1.0 inch, and for example from approximately 0.7 inches to approximately 0.9 inches.

[0104] The stepped seal ring 264 is in contact with the upper sealing surface 420 of the upper bellows ring 410, and as the bellows 412 extends further, the stepped seal ring 264 on the upper sealing surface 420 applies a large force 453. This large force 453 is greater than the smaller force 452 at the second position in Figure 4B. The large force 453 results in a complete seal between the chamber space 278 and the transfer chamber space 236, so that the chamber space 278 and the transfer chamber space 236 are fluidly separated. The seal between the chamber space 278 and the transfer chamber space 236 makes it possible to perform processes that require a different pressure than the pressure in the transfer chamber space 236. Furthermore, according to the overall design disclosed herein, the distance between the surface of the substrate placed on the substrate support surface 223 and the target surface can be adjusted to improve the process results obtained during the substrate processing step (e.g., the PVD deposition step). In some embodiments, the spring constant of the bellows 412 is selected to achieve a desired large force 453 when the substrate is positioned within a desired range of distances from the target to the substrate.

[0105] The structural integrity of both the chuck seal surface 422 and the upper seal surface 420 is maintained even after processing a large volume of substrates within the processing assembly 160. The chuck seal surface 422 and the upper seal surface 420 exhibit little warping over time and thus maintain a high-quality seal between the chamber space 278 and the transfer chamber space 236 throughout the service life of the chamber. Warping may be curvature of either the upper seal surface 420 or the chuck seal surface 422, or undesirable wear of the chuck seal surface 422 and the upper seal surface 420. Undesirable curvature or wear will result in leakage within the range of the seal formed between the chuck seal surface 422 and the upper seal surface 420. Warping of the chuck seal surface 422 and the upper seal surface 420 is minimized at least partially by the use of the bellows assembly 250. The bellows assembly 250 minimizes sudden force application to either the chuck seal surface 422 or the upper seal surface 420. The bellows assembly 250 disperses the impact force that forms the seal over a longer period of time, and therefore reduces deformation of the chuck seal surface 422 and the upper seal surface 420.

[0106] The seal ring 264 and the chuck seal surface 422 maintain planarity over a wide range of temperatures and pressures within both the transfer chamber space 236 and the chamber space 278. The seal ring 264 further maintains planarity over a wide range of positions of the support chucks 224a-b. In embodiments where the support chucks 224a-b are moved during substrate processing, the flexibility of the bellows 412 allows both the chuck seal surface 422 and the upper seal surface 420 of the seal ring 264 to be maintained planar and parallel to each other over a range of positions of the support chucks 224a-b. If it is desired to move the substrate during processing, the support chucks 224a-b can be moved. The seal ring 264 and the chuck seal surface 422 further maintain planarity while the temperature of the substrate 200 and the substrate support surface 223 rises during substrate processing. While the position of the chuck seal surface 422 changes due to thermal expansion and contraction, the bellows assembly 250 passively adjusts its position to accommodate the movement and maintain the seal.

[0107] The upper bellows ring 410 is considered a processing chamber wall. The processing chamber wall can be any wall that defines the chamber space within the processing assembly 160. In some embodiments, additional processing chamber walls include a sputtering target assembly 203, a containment member 208, and the bellows 412.

[0108] Figure 5 is a schematic enlarged cross-sectional view of the modified interface between the seal ring 264 and the bellows assembly 250 as shown in Figures 2B and 3B, as well as the gas inlet 426 and gas outlet 536. The interface between the seal ring 264 and the bellows assembly 250 includes an intermediate discharge region 502. The gas inlet 426 and gas outlet 536 are located through the containment member 208.

[0109] The intermediate discharge region 502 is located between the chuck seal surface 422 of the seal ring 264 and the upper seal surface 420 of the upper bellows ring 410 of the bellows assembly 250. The intermediate discharge region 502 may be a small cavity or pocket formed between the chuck seal surface 422 and the upper seal surface 420. The intermediate discharge region 502 is formed at the end of the discharge line 512. The discharge line 512 is located through the upper bellows ring 410, the lower bellows ring 414, the horizontal ring portion 227 of the liner 206, and the side wall of the transfer chamber assembly 150. The discharge line 512 is connected to the intermediate region pump 514. The intermediate region pump 514 may be used to evacuate the intermediate discharge region 502 to a pressure between the pressure in the chamber space 278 and the pressure in the transfer chamber space 236.

[0110] The discharge line 512 includes a first discharge line section 504, a second discharge line section 506, and a third discharge line section 508. The first discharge line section 504, the second discharge line section 506, and the third discharge line section 508 are all connected to each other and are in fluidic communication. As a result, the first discharge line section 504 is connected to the second discharge line section 506 and is in fluidic communication with the second discharge line section 506, and the second discharge line section 506 is connected to the third discharge line section 508 and is in fluidic communication with the third discharge line section 508. The third discharge line section 508 is connected to the intermediate area pump 514 and is in fluidic communication with the intermediate area pump.

[0111] The first discharge line section 504 is positioned through the upper bellows ring 410, and thus has a first end adjacent to the intermediate discharge region 502 and formed through a portion of the upper sealing surface 420, and a second end radially outward of the outer ledge portion 402 of the sealing ring 264 and radially inward of the bellows 412, and formed through the upper sealing surface 420. The second end of the first discharge line section 504 is connected to the first end of the second discharge line section 506.

[0112] The second discharge line section 506 is located radially inward of the bellows 412 of the bellows assembly 250. The second discharge line section 506 extends from the upper bellows ring 410 to the lower bellows ring 414. The second end of the second discharge line section 506 connects to the first end of the third discharge line section 508 at the outer wall of the lower bellows ring 414.

[0113] The third discharge line section 508 is formed through the lower bellows ring 414, the horizontal ring portion 227 of the liner 206, and the side wall of the transfer chamber assembly 150. The third discharge line section 508 is a horizontally oriented discharge line. The second end of the third discharge line section 508 is connected to the intermediate area pump 514. Alternatively, there may be an additional fourth discharge line section connecting the third discharge line section 508 to the intermediate area pump 514. In some embodiments, the intermediate area pump 514 is a vacuum pump.

[0114] The magnetron assembly 295 is positioned on the sputtering target assembly 203, so that the magnetron support wall 289 is positioned on the sputtering target assembly 203 and above the dielectric isolator 204. The magnetron space 299 is fluidically isolated from the chamber space 278 and the transfer chamber space 236. The sputtering target assembly 203 isolates the magnetron space 299 from the chamber space 278.

[0115] The chuck seal surface 422 further includes two O-ring grooves 515, 516 and two O-rings 517, 519. The first O-ring groove 515 and the second O-ring groove 516 are located on the chuck seal surface 422 of the stepped seal ring 264. The O-ring grooves 515, 516 may be arranged such that the first O-ring groove 515 is radially inward of the intermediate discharge region and the second O-ring groove is radially outward of the intermediate discharge region. The first O-ring groove 515 and the second O-ring groove 516 are each fitted with a first O-ring 517 and a second O-ring 519, respectively. The first O-ring 517 and the second O-ring 519 may be KYFLON® O-rings. The first O-ring 517 and the second O-ring 519 contact and seal the upper seal surface 420 of the upper bellows ring 410. The first O-ring 517 and the second O-ring 519 help to form a separation seal between the transfer chamber space 236 and the chamber space 278.

[0116] The transfer chamber space 236 forms a downward exhaust region. The transfer chamber pump 518 exhausts the transfer chamber space 236 to a predetermined pressure. The transfer chamber pump 518 is fluidly connected to the transfer chamber space 236 by a transfer chamber line 510. The transfer chamber line 510 is formed through the side wall of the transfer chamber assembly 150. In some embodiments, the transfer chamber pump 518 is a vacuum pump.

[0117] The gas inlet 426 and gas outlet 536 are in fluid communication with the chamber space 278. The gas inlet 426 is formed between the upper shield body 222 and the first cylindrical lower part 221 of the lower shield body 229. Alternatively, the gas inlet 426 may be formed through either the first cylindrical lower part 221 of the lower shield body 229 or the upper shield body 222. The gas inlet 426 fluidly connects the chamber space 278 to the inlet plenum 532. The inlet plenum 532 is a plenum that surrounds the chamber space 278 and is formed through the main support portion 225 of the liner 206. The inlet plenum 532 is at least partially defined by the main support portion 225 of the liner 206 and the outer surface of the containment member 208. The inlet plenum 532 is fluidly connected to the inlet gas passage 528. The inlet gas passage 528 fluidly connects the inlet plenum 532 to the gas source 520. The inlet gas passage 528 is an inclined gas passage, and in this case, the inlet gas passage 528 slopes downward to the right as it approaches the inlet plenum 532 from the gas source 520.

[0118] The gas source 520 can supply process gas, purge gas, conditioning gas, or cleaning gas. In some embodiments, the gas source 520 may be multiple gas sources 520. The gas source 520 can supply gases such as silicon-containing gas, nitrogen-containing gas, and oxygen-containing gas. The gas source 520 may also supply argon gas, neon gas, and helium gas. When a cleaning gas is supplied, the gas source 520 can supply chlorine gas or fluorine gas. Other process gases, purge gases, conditioning gases, or cleaning gases not expressly described herein may be supplied.

[0119] The gas outlet 536 is formed between the upper shield body 222, the sputtering target assembly 203, and the dielectric isolator 204. The gas outlet 536 connects the chamber space 278 to the exhaust plenum 540. The exhaust plenum 540 surrounds the chamber space 278 and at least a portion of the upper shield body 222 of the containment member 208. The exhaust plenum 540 is formed through the main support portion 225 of the liner 206. The exhaust plenum 540 is at least partially defined by the outer wall 548 of the upper shield body 222 of the containment member 208, the dielectric isolator 204, and the main support portion 208 of the liner 206. The exhaust plenum 540 fluidly connects the gas outlet 536 to the outlet gas passage 530. The outlet gas passage 530 is formed through the main support portion 225 of the liner 206. The outlet gas passage 530 fluidly connects the exhaust plenum 540 and the exhaust pump 546.

[0120] The exhaust pump 546 functions to exhaust the gas introduced into the chamber space 278 by the gas source 520. The exhaust pump 546 also functions to exhaust the chamber space 278 to a predetermined process pressure. In some embodiments, the lift assembly 220a-b is lifted to the processing position, and the chamber space 278 is fluidly separated from the transfer chamber space 236. The pressure in the chamber space 278 and the pressure in the transfer chamber space 236 are the same immediately after the lift assembly 220a-b moves to the processing position. In some embodiments, the process is performed at a pressure different from the pressure in the transfer chamber space 236. To change the pressure in the chamber space 278, the exhaust pump 546 can exhaust gas from the chamber space 278, or gas can be introduced by the gas source 520.

[0121] The gas flow through the process gas inlet 426 is indicated by the inlet flow arrow 550. The inlet flow arrow 550 indicates the gas moving downward from the process gas inlet 426 between the projection 534 of the upper shield body 222 and the first cylindrical lower part 221 of the lower shield body 229. In this case, the inlet flow arrow 550 indicates the gas flowing between the covering 210 and the projection 534 of the upper shield body 222 and entering the main part of the chamber space 278. The covering 210 protects the bellows assembly 250 from the direct introduction of gas from the process gas inlet 426 and directs the gas upward toward the center of the chamber space 278.

[0122] The gas flow from the chamber space 278 through the gas outlet 536 is indicated by the exhaust flow arrow 560. The exhaust flow arrow 560 indicates the exhaust gas moving from the chamber space 278 to the gas outlet 536 in the upper corner of the chamber space 278. In this case, the exhaust flow arrow 560 indicates the exhaust gas flowing from the gas outlet 536 to the exhaust plenum 540.

[0123] A cooling channel 524 is located inside the main support portion 225 of the liner 206. The cooling channel 524 is positioned between the main support portion 225 of the liner 206 and the upper surface 538 of the transfer chamber assembly 150. To maintain a constant temperature inside the liner 206 or the transfer chamber assembly 150 during substrate processing, water or other fluid can be circulated within the cooling channel 524.

[0124] The O-ring 522 is positioned in a groove 552 on the upper surface 538 of the transfer chamber assembly 150. The O-ring 522 is located between the upper surface 538 of the transfer chamber assembly 150 and the main support portion 225 of the liner 206.

[0125] The O-ring 542 is positioned in a groove 554 on the support ledge 556 of the main support portion 225 of the liner 206. The O-ring 542 is positioned between the main support portion 225 of the liner 206 and the dielectric isolator 204.

[0126] Figures 6A to 6E are schematic enlarged cross-sectional views of the interface between the modified edge rings 628a to 628e and the alternative covering rings 611a to 611e, the lower shield body 229, and the compression bellows assembly 650, as shown in Figures 2B and 3B. Each of the alternative interface surfaces in Figures 6A to 6E can be combined with each other or with the embodiments in Figures 2B and 3B. The embodiments in Figures 6A to 6E are embodiments in which the bellows assembly 250 is replaced with the compression bellows assembly 650, the edge ring 228 is replaced with one of several modified edge rings 628a to 628e, and the covering ring 210 is replaced with one of several modified covering rings 611a to 611e. In some embodiments, the lower shield body 229 is replaced with a modified lower shield body 629.

[0127] Figure 6A shows a first alternative embodiment. The first alternative embodiment has a lower shield body 229 similar to the lower shield body 229 described in Figures 1 to 5. The lower shield body 229 includes a compression bellows assembly 650 and a bellows stopper 608 attached to the compression bellows assembly 650. The first alternative embodiment also includes a modified covering 611a, a modified edge ring 628a, and a modified support chuck 624a. The modified covering 611a, modified edge ring 628a, and modified support chuck 624a have a material composition similar to the covering 210, edge ring 228, and support chuck 224 described herein, but include a modified external shape.

[0128] The compression bellows assembly 650 includes a bellows 612, an upper bellows ring 605, and a stepped portion 602. The bellows 612 is similar to the bellows 412 described herein. The upper bellows ring 605 is positioned on the upper surface 455 of the second cylindrical lower portion 220 of the lower shield body 229. The upper bellows ring 605 extends radially inward from the upper surface 455 of the second cylindrical lower portion 220. The bellows 612 is connected to the bottom side of the upper bellows ring 605. The stepped portion 602 is a Z-shaped portion. The stepped portion 602 includes a lower horizontal portion 616, a vertical portion 606, and an upper horizontal portion 607. The lower horizontal portion 616 is connected to the bottom of the bellows 612. The lower horizontal portion 616 extends radially inward from the bellows 612. The vertical portion 606 is attached to the lower horizontal portion 616 radially inward of the bellows 612. The vertical portion 606 of the stepped portion 602 extends upward from the tip of the lower horizontal portion 616. The upper horizontal portion 607 is positioned above the vertical portion 606. The upper horizontal portion 607 extends radially inward from the vertical portion 606 of the stepped portion 602. The upper horizontal portion 607 has a lower surface that defines the upper sealing surface 420.

[0129] The bellows 612 of the compression bellows assembly 650 is configured to conform to at least one direction, such as the vertical direction (i.e., the Z direction), and is configured to prevent gas from passing through the bellows 612 during processing. The bellows assembly 650 may be a stainless steel or Inconel bellows assembly with both ends welded to an upper bellows ring 605 and a stepped portion 602. The flexible nature of the bellows assembly 650 allows it to accommodate any misalignment or difference in planarity between the chuck seal surface 422 of the stepped seal ring 264 and the upper seal surface 420 of the processing chamber wall, thereby enabling the formation of a reliable and repeatable seal on the upper seal surface 420. In the embodiments shown in Figures 6A to 6E, the compression bellows assembly 650 contracts while sealing the processing chamber space 278.

[0130] The bellows stopper 608 is attached to the annular portion 272 such that the bellows stopper 608 is positioned at the bottom of the annular portion 272 of the lower shield body 229. The bellows stopper 608 has a bellows receiving surface 640. The bellows receiving surface 640 stops the extension of the bellows 612 when the modified support chuck 624a is in a lowered position below the processing position and the bellows is extended. The bellows receiving surface 640 is sized to receive the lower horizontal portion 616 of the stepped portion 602.

[0131] The modified covering 611a includes an upper member 614a and a lower member 615a. The upper member 614a is a horizontal member. The lower member 615a is a vertical member. The lower member 615a extends downward from the radially outer tip of the upper member 614a. The lower member 615a is positioned radially between the second cylindrical lower portion 220 and the first cylindrical lower portion 221 of the lower shield body 229. The upper member 614a extends to cover the entire bellows assembly 650 and at least a portion of the modified edge ring 628a. The upper member 614a includes a horizontal contact surface 274 located on the bottom side of the upper member 614a. The upper member 614a further includes a downward projection 652. The downward-facing projection 652 is positioned on the horizontal contact surface 274 and extends from the upper member 614a, thereby allowing the downward-facing projection 652 to contact the upper surface of the upper horizontal portion 607.

[0132] The modified edge ring 628a is positioned on the outer ledge 266 of the modified support chuck 624a. The modified edge ring 628a is similar to the edge ring 228 in Figures 1 to 5. The modified edge ring 628a includes an inner top surface 636, an intermediate top surface 624, and an outer top surface 634. The inner top surface 636 is positioned radially inward of both the intermediate top surface 624 and the outer top surface 634. The inner top surface 636 is coplanar with the substrate support surface 223. The intermediate top surface 624 is positioned radially inward of the outer top surface 634. The intermediate top surface 624 is a curved top surface, thereby forming a groove between the inner top surface 636 and the outer top surface 634. The outer top surface 634 is dimensional to receive at least a portion of the horizontal contact surface 274 of the modified covering ring 611a. The inner upper surface 636 is positioned above the outer upper surface 634.

[0133] The modified support chuck 624a is similar to the support chucks 224a-b, except that the seal ring is an extension of the outer ledge 266, so that the chuck seal surface 422 is coplanar with the outer ledge 266 of the modified support chuck 624a.

[0134] When the modified support chuck 624a rises to the processing position, the upper sealing surface 420 of the compression bellows assembly 650 contacts the chuck sealing surface 422, compressing the bellows 612. As the bellows 612 is compressed, the modified covering ring 611a rises. Although not shown in Figure 6A, the modified edge ring 628a may contact the horizontal contact surface 274 of the modified covering ring 611a.

[0135] Figure 6B shows a second alternative embodiment. The second alternative embodiment has a modified lower shield body 629. The modified lower shield body 629 has a compression bellows assembly 650 and a bellows stopper 608 attached to the compression bellows assembly 650. The second alternative embodiment also includes a modified covering 611b, a modified edge ring 628b, and a modified support chuck 624b. The modified covering 611b, modified edge ring 628b, and modified support chuck 624b have a similar material composition to the covering 210, edge ring 228, and support chuck 224 described herein, but include a modified external shape.

[0136] The modified lower shield body 629 is similar to the lower shield body 229 described in Figures 1 to 5, but has a modified second cylindrical lower portion 620 and a horizontal bellows mounting portion 603. The modified second cylindrical lower portion 620 is similar to the second cylindrical lower portion 220 described herein, but the second cylindrical lower portion 220 is extended and the horizontal bellows mounting portion 603 is positioned on the second cylindrical lower portion 220. The horizontal bellows mounting portion 603 is a horizontal portion that extends radially inward from the modified second cylindrical lower portion 620. A modified upper bellows ring 610 is positioned at the bottom of the horizontal bellows mounting portion 603.

[0137] The compression bellows assembly 650 includes a bellows 612, a modified upper bellows ring 610, and a stepped section 602. The bellows 612 is similar to the bellows 412 described herein. The modified upper bellows ring 610 rests on the bottom surface of the horizontal bellows mounting section 603. The bellows 612 is connected to the bottom side of the modified upper bellows ring 610. The stepped section 602 is a Z-shaped portion. The stepped section 602 includes a lower horizontal section 616, a vertical section 606, and an upper horizontal section 607. The lower horizontal section 616 is connected to the bottom of the bellows 612. The lower horizontal section 616 extends radially inward from the bellows 612. The vertical section 606 is attached to the lower horizontal section 616 radially inward from the bellows 612. The vertical portion 606 of the stepped portion 602 extends upward from the tip of the downward horizontal portion 616. The upward horizontal portion 607 is positioned above the vertical portion 606. The upward horizontal portion 607 extends radially inward from the vertical portion 606 of the stepped portion 602. The upward horizontal portion 607 has a lower surface that defines the upper sealing surface 420.

[0138] The bellows stopper 608 is attached to the annular portion 272 of the lower shield body 229. The bellows stopper 608 is the same as the bellows stopper 608 shown in Figure 6A.

[0139] The modified covering 611b includes an upper member 614b and a lower member 615b. The upper member 614b is a horizontal member. The lower member 615b is a vertical member. The lower member 615b extends downward from the radially outer tip of the upper member 614b. The lower member 615b is radially positioned between the second cylindrical lower part 220 and the first cylindrical lower part 221 of the lower shield body 629. The upper member 614b extends to cover the entire bellows assembly 650 and at least a portion of the modified edge ring 628b. The upper member 614b includes a horizontal contact surface 274 located on the bottom side of the upper member 614b.

[0140] The modified edge ring 628b is similar to the edge ring 628a of 6A. The modified edge ring 628b is positioned on the outer ledge 266 of the modified support chuck 624b. The outer upper surface 634 of the modified edge ring 628b is dimensioned to receive at least a portion of the horizontal contact surface 274 of the modified covering ring 611b.

[0141] The modified support chuck 624b is similar to the support chucks 224a-b, except that it includes a skirt support surface 660 located radially outward from the outer ledge 266. The skirt support surface 660 is located below the outer ledge 266 and supports the support chuck skirt portion 609.

[0142] The support chuck skirt portion 609 includes a support element 661, a stepped element 662, and a contact element 663. The support element 661 is positioned on the skirt support surface 660 of the modified support chuck 624b. The support element 661 extends radially outward from the skirt support surface 660 of the modified support chuck 624b. The stepped element 662 is positioned vertically downward from the support element 661. The contact element 663 is connected to the lower end of the stepped element 662 and is positioned radially outward from that lower end. The contact element 663 includes an upper contact surface 622. The upper contact surface 622 is dimensioned to contact the upper sealing surface 420 of the compression bellows assembly 650.

[0143] When the modified support chuck 614b is raised to the processing position, the upper sealing surface 420 of the compression bellows assembly 650 contacts the upper contact surface 622, compressing the bellows 612. Once the bellows 612 is compressed, the modified covering ring 611b is raised by contacting the outer upper surface 634 of the modified edge ring 628b.

[0144] Figure 6C shows a third alternative embodiment. The third alternative embodiment has a modified lower shield body 629. The modified lower shield body 629 is the same modified lower shield body 629 as in Figure 6B. The modified lower shield body 629 includes a compression bellows assembly 650 as described in Figure 6B and the corresponding text, and a bellows stopper 608 attached to the compression bellows assembly 650 as described in Figures 6A-6B and the corresponding text. The third alternative embodiment also includes a modified covering 611c, a modified edge ring 628c, and a modified support chuck 624c. The modified covering 611c, modified edge ring 628c, and modified support chuck 624c have a similar material composition to the covering 210, edge ring 228, and support chuck 224 described herein, but include a modified shape.

[0145] The modified covering 611c includes an upper member 614c and a lower member 615c. The upper member 614c is a horizontal member. The lower member 615c is a vertical member. The lower member 615c extends downward from the radially outer tip of the upper member 614c. The lower member 615c is positioned radially between the second cylindrical lower portion 220 and the first cylindrical lower portion 221 of the lower shield body 629. The upper member 614c extends to cover the entire bellows assembly 650 and at least a portion of the modified edge ring 628c. The upper member 614c includes a horizontal contact surface 274 located on the bottom side of the upper member 614c.

[0146] The modified edge ring 628c is similar to the edge rings 628a and 628b in Figures 6A and 6B. The modified edge ring 628c is positioned on the outer ledge 266 of the modified support chuck 624c. The outer upper surface 634 of the modified edge ring 628c is dimensioned to receive at least a portion of the horizontal contact surface 274 of the modified covering ring 611c.

[0147] The modified support chuck 624c is similar to the support chucks 224a-b, except that the stepped seal ring 264 described herein is a continuous portion from the modified support chuck 624c. The chuck sealing surface 422 of the stepped seal ring 264 is dimensioned to contact the upper sealing surface 420 of the compression bellows assembly 650.

[0148] When the modified support chuck 614c is raised to the processing position, the upper sealing surface 420 of the compression bellows assembly 650 contacts the chuck sealing surface 422, compressing the bellows 612. Once the bellows 612 is compressed, the modified covering ring 611c is raised by contacting the outer upper surface 634 of the modified edge ring 628c.

[0149] Figure 6D shows a fourth alternative embodiment. The fourth alternative embodiment has a modified lower shield body 629. The modified lower shield body 629 is the same modified lower shield body 629 as in Figure 6B. The modified lower shield body 629 includes a compression bellows assembly 650 as described in Figure 6B and the corresponding text, and a bellows stopper 608 attached to the compression bellows assembly 650 as described in Figures 6A-6B and the corresponding text. The fourth alternative embodiment also includes a modified covering 611d, a modified edge ring 628d, and a modified support chuck 624d. The modified covering 611d, modified edge ring 628d, and modified support chuck 624d have a similar material composition to the covering 210, edge ring 228, and support chuck 224 described herein, but include a modified shape.

[0150] The modified covering 611d includes an upper member 614d and a lower member 615d. The upper member 614d is a horizontal member. The lower member 615d is a vertical member. The lower member 615d extends downward from the radially outer tip of the upper member 614d. The lower member 615d is radially positioned between the second cylindrical lower 220 and the first cylindrical lower 221 of the lower shield body 629. The upper member 614d extends to cover the entire bellows assembly 650 and at least a portion of the modified edge ring 628d. The upper member 614d does not extend through the stepped seal ring 264 of the modified support chuck 624d. The upper member 614d includes a horizontal contact surface 274 located on the bottom side of the upper member 614d.

[0151] The modified edge ring 628d is positioned on the outer ledge 266 of the modified support chuck 624d. The modified edge ring 628d includes an inner upper surface 636, a first step portion 644, a second step portion 646, and a third step portion 648. The first step portion 644 is a horizontal plane positioned parallel to and above the outer ledge 266. The second step portion 646 is a horizontal plane positioned parallel to the outer ledge 266 and perpendicularly below the first step portion 644. The second step portion 646 may be coplanar with the outer ledge 266. The second step portion 646 includes an outer upper surface 634 sized to receive at least a portion of the horizontal contact surface 274 of the modified covering 611d. The third step portion 648 is a horizontal plane positioned parallel to the outer ledge 266 and perpendicularly below the second step portion 646. The third step portion 648 may be coplanar with the bottom chuck surface 432, or it may be positioned below the bottom chuck surface 432. The third step portion 648 includes a bellows support surface 654. The bellows support surface 654 is the upper surface of the third step portion 648 and is dimensionally determined to receive and support the upper sealing surface 420 of the upper horizontal portion 607.

[0152] The modified support chuck 624d is similar to the support chucks 224a-b, except that the stepped seal ring 264 described herein is a continuous portion from the modified support chuck 624d. In the modified support chuck 624d, the chuck seal surface 422 of the stepped seal ring 264 is sized to contact the bottom surface of the second stepped portion 646 of the modified edge ring 628d.

[0153] When the modified support chuck 614d is raised to the processing position, the upper sealing surface 420 of the compression bellows assembly 650 contacts the bellows support surface 654, and the bellows 612 is compressed. When the bellows 612 is compressed, the modified covering ring 611d is raised by contacting the outer upper surface 634 of the modified edge ring 628d.

[0154] Figure 6E shows a fifth alternative embodiment. The fifth alternative embodiment has a modified lower shield body 629. The modified lower shield body 629 is the same modified lower shield body 629 as in Figure 6B. The modified lower shield body 629 includes a compression bellows assembly 650 as described in Figure 6B and the corresponding text, and a bellows stopper 608 attached to the compression bellows assembly 650 as described in Figures 6A-6B and the corresponding text. The fifth alternative embodiment also includes a modified covering 611e, a modified edge ring 628e, and a modified support chuck 624e. The modified covering 611e, modified edge ring 628e, and modified support chuck 624e have a similar material composition to the covering 210, edge ring 228, and support chuck 224 described herein, but include a modified shape.

[0155] The modified covering 611e includes an upper member 614e and a lower member 615e. The upper member 614e is a horizontal member. The lower member 615e is a vertical member. The lower member 615e extends downward from the radially outer tip of the upper member 614e. The lower member 615e is positioned radially between the second cylindrical lower portion 620 and the first cylindrical lower portion 221 of the lower shield body 629. The upper member 614e extends to cover the entire bellows assembly 650 and at least a portion of the modified edge ring 628e. The upper member 614e has a projection 676 including a second contact bottom surface 678. The upper member 614e includes a horizontal contact surface 274 located on the bottom side of the upper member 614e. The horizontal contact surface 274 contacts at least a portion of the modified edge ring 628e. The projection 676 extends downward from the horizontal contact surface 274 of the upper member 614e. A second contact bottom surface 678 is located at the lower end of the projection 676 and is molded to interact with the outer ledge 680 of the modified edge ring 628e. The second contact bottom surface 678 contacts the outer edge ring surface 682 and the uppermost surface 684 of the outer ledge 680.

[0156] The modified edge ring 628e is located on the outer ledge 266 of the modified support chuck 624e. The modified edge ring 628e includes an inner top surface 636, a first step portion 644, and an outer ledge 680. The inner top surface 636 is the same as the inner top surface 636 shown in Figure 6A. The first step portion 644 is a horizontal plane located parallel to and above the outer ledge 266 of the modified support chuck 624e. The outer ledge 680 is a ledge located vertically below the first step portion 644. The outer ledge 680 includes a top ledge surface 684 and an outer edge ring surface 682. The outer edge ring surface 682 is an inclined surface connected to the top ledge surface 684 and located radially outward from the top ledge surface 684. The uppermost ledge surface 684 is a horizontal plane located radially outward of the first step portion 644. The uppermost ledge surface 684 is located radially outward of the outer ledge 266 of the modified support chuck 624e and offset perpendicularly from the outer ledge 266. The uppermost ledge surface 684 and the outer edge ring surface 682 are located above the chuck seal surface 422 of the step-shaped seal ring on the modified support chuck 624e. The modified edge ring 628e includes a lower ledge surface 686. The lower ledge surface 686 is the underside of the outer ledge 680. The lower ledge surface 686 is located below the uppermost ledge surface 684 and the outer edge ring surface 682. The lower ledge surface 686 is offset perpendicularly from the chuck seal surface 422, thereby allowing the lower ledge surface 686 to float unimpeded.

[0157] The modified support chuck 624e is similar to the support chucks 224a-b, except that the stepped seal ring 264 described herein is a continuous portion from the modified support chuck 624e. In the modified support chuck 624e, the chuck sealing surface 422 of the stepped seal ring 264 is dimensioned to contact the upper sealing surface 420 of the compression bellows assembly 650.

[0158] When the modified support chuck 614e is raised to the processing position, the upper sealing surface 420 of the compression bellows assembly 650 contacts the chuck sealing surface 422, compressing the bellows 612. Once the bellows 612 is compressed, the modified covering ring 611e is raised by contacting the first step portion 644 and the uppermost ledge surface 684 of the modified edge ring 628e.

[0159] In some embodiments, the modified support chucks 624a-624e may have cavities formed in the bottom chuck surface 432. The cavities may be pockets within the modified support chucks 624a-624e and may extend below the outer ledge 266. The upper horizontal portion 607 of the stepped portion 602 of the bellows assembly 650 is considered a processing chamber wall. The processing chamber wall may be any wall defining the chamber space within the processing assembly 160. In some embodiments, additional processing chamber walls include a sputtering target assembly 203, a containment member 208, and bellows 612.

[0160] Unless otherwise stated herein, components not shown in Figures 6A to 6E are the same as those shown in Figures 1 to 5. In some embodiments, some components shown in Figures 6A to 6E and their corresponding text can be combined with the embodiments shown in Figures 1 to 5.

[0161] Figure 7 shows a method 700 for transferring substrates within the transfer space 236 and chamber space 278 shown in Figures 2A and 2B. Method 700 is made possible by the apparatus described in Figures 2A and 2B. In some embodiments, method 700 may include additional processing steps other than those described herein.

[0162] The first step 702 of Method 700 is to use a robot to place a substrate, such as substrate 200, on a substrate support at a substrate receiving position within a first region. In the first step 702, the substrate support is the substrate support surface 223 of the support chuck 224a. The substrate receiving position is the substrate receiving position shown in Figure 2A, where the support chuck 224a and lift assembly 220a are positioned below on which the substrate 200 can be loaded. The first region is the transfer chamber assembly 150 and the transfer space 236 formed within the transfer chamber assembly 150. The robot used in the first step 702 is the central transfer device 145. This robot can be any suitable substrate transfer robot. This robot transfers the substrate 200 between processing assemblies 160. The pressure to which the substrate 200 is exposed during the first step 702 is the transfer space pressure. The transfer space pressure is approximately 10 -9 Torr~approximately 10 -4 Torr, for example, about 10 -8 Torr~approximately 10 -5 Torr, for example, about 10 -7 Torr~approximately 10 -6 It's Torr.

[0163] The second step 704 of method 700 is to lift the substrate support and the substrate from the first vertical position. The lift assembly 220a enables the vertical movement of the substrate support and the substrate. The substrate support and the substrate are lifted at a speed sufficient to increase the speed of substrate processing while minimizing damage to the substrate. The lift assembly 220a and the support chuck 224a are mounted to each other and lift at the same speed throughout the entire lifting process.

[0164] The third step 706 of Method 700 is to position the substrate support in the processing position such that the substrate is within the second region and the first and second regions are sealed from each other. In the third step 706, the substrate support and the substrate are lifted so that the substrate support and the substrate are in the processing position as shown in Figure 2B. In the processing position, the bellows assembly 250 is in contact with the support chuck 224a, and a seal is formed between the transfer space 236 and the chamber space 278. In this embodiment, the transfer space 236 is the first region and the chamber space 278 is the second region. By providing a seal between the transfer space 236 and the chamber space 278, it is possible to exhaust the chamber space 278 to a pressure different from that of the transfer space 236. By exhausting the chamber space 278 to a pressure different from that of the transfer space 236, it is possible to perform different processes in each processing assembly 160 within the cluster tool assemblies 100a and 100b.

[0165] The fourth step 708 of Method 700 is to carry out a substrate manufacturing process. The substrate manufacturing process is one of the following: PVD process, CVD process, ALD process, etching process, cleaning process, heating process, annealing process, and / or polishing process. The substrate manufacturing process is carried out in a chamber space 278. In the chamber space 278 shown in Figures 2 to 6, the substrate manufacturing process is a PVD process. The PVD process produces thin films and coatings on the substrate 200. The PVD process can deposit tantalum, copper, aluminum, cobalt, ruthenium, molybdenum, zinc, chromium, gold, palladium, titanium, silicon, or other metals and metal-containing compounds.

[0166] After the processing in the fourth step 708 is performed on the substrate, the chamber space 278 can be purged and the support chuck 224a is lowered back to the substrate receiving position. The robot removes the support substrate 200 from the support chuck 224a, and method 700 is repeated with a different substrate. In some embodiments, a single processing assembly 160 can process the substrate multiple times over the substrate's lifespan.

[0167] Figure 8 shows a method 800 for transferring the substrate 200 within the transfer space 236 and chamber space 278 shown in Figures 3A and 3B. Method 800 is made possible by the apparatus described in Figures 3A and 3B. In some embodiments, method 800 includes additional processing steps other than those described herein.

[0168] The first step 802 of Method 800 is to move a support chuck, such as support chuck 224b, to a first position on a robot within a first area. In the first step 802, the first position is a loading position above a lift assembly, such as lift assembly 220b. The support chuck 224b is transported between processing assemblies 160 together with a substrate, such as substrate 200, and is detached from the lift assembly 220b during the first step 802. The support chuck 224b is positioned above the lift assembly 220b, so that the lift assembly 220b is positioned completely below the support chuck 224b. The first area is the transport space 236 within the transport chamber assembly 150. The robot that transports the substrate chuck is the central transport device 145.

[0169] Although a carousel is shown in Figures 3A and 3B, the central transfer device 145 can be replaced with other suitable substrate and substrate chuck transfer devices. The transfer device is equipped to transfer both the substrate chuck and the substrate within the first area.

[0170] In the second step 804 of method 800, the lift assembly is raised to contact the bottom side of the support chuck. The lift assembly is coupled to the bottom side of the support chuck so that the lift assembly and the support chuck are securely connected to each other. The lift assembly passes through a central opening in the robot arm coupled to the support chuck to contact the bottom side of the support chuck. The lift assembly also provides electrical and gas connections to the support chuck. While the lift assembly is raised to contact the bottom side of the support chuck, the support chuck remains connected to and positioned on the robot.

[0171] During the second step 804, the support chuck is electrically connected to both the lift assembly and the robot, so that the support chuck can provide constant heating and chucking to the substrate. Constant heating and chucking to the substrate helps to maintain a constant temperature for the substrate and minimizes damage to the back surface of the substrate caused by sliding. While both the lift assembly and the robot provide the electrical connection for powering the support chuck, the power supply to the support chuck switches from the robot to the lift assembly during the second step 804.

[0172] In the third step 806 of method 800, the support chuck and the substrate are lifted from the robot by the lift assembly. During the third step 806, the support chuck is detached from the robot. The lift assembly lifts the support chuck and the substrate placed on the support chuck vertically upward, thereby moving the support chuck and the substrate through the first region toward the second region.

[0173] The fourth step 808 of method 800 is to position the lift assembly in a second vertical position such that the substrate is in the second region and the first and second regions are sealed from each other. In the fourth step 808, the substrate support and the substrate are lifted by the lift assembly so that the substrate support and the substrate are in the processing position shown in Figure 3B. In the processing position, the bellows assembly 250 contacts the support chuck 224b, forming a seal between the transfer space 236 and the chamber space 278. In this embodiment, the transfer space 236 is the first region and the chamber space 278 is the second region. By providing a seal between the transfer space 236 and the chamber space 278, it is possible to exhaust the chamber space 278 to a pressure different from that of the transfer space 236. By exhausting the chamber space 278 to a pressure different from that of the transfer space 236, it is possible to perform different processes in each processing assembly 160 within the cluster tool assemblies 100a and 100b.

[0174] The fifth step 810 of Method 800 is to carry out a substrate manufacturing process. The substrate manufacturing process is one of the following: PVD process, CVD process, ALD process, etching process, cleaning process, heating process, annealing process, and / or polishing process. The substrate manufacturing process is carried out in a chamber space 278. In the chamber space 278 shown in Figures 2 to 6, the substrate manufacturing process is a PVD process. The PVD process produces thin films and coatings on the substrate 200. The PVD process can deposit zinc, chromium, gold, palladium, titanium, copper, or other metals and metal-containing compounds.

[0175] After the processing in the fifth step 810 is performed on the substrate 200, the chamber space 278 can be purged and the support chuck 224a is lowered and returned to the substrate receiving position. A robot removes the support chuck 224a from the lift assembly, and method 800 is repeated with a different substrate. In some embodiments, a single processing assembly 160 can process the substrate multiple times over the substrate's lifespan.

[0176] Methods 700 and 800 can be combined. The methods described herein can be carried out using the apparatus shown in Figures 1 to 6. It is also conceivable that the methods described herein can be completed using alternative apparatus.

[0177] The embodiments disclosed herein relate to apparatus for substrate processing, as well as cluster tools comprising a transfer chamber assembly and a plurality of processing assemblies. Generally speaking, the disclosure provides substrate processing tools with improved flexibility in process conditions between processing assemblies within the same cluster tool.

[0178] In this disclosure, a substrate and optionally a support chuck may be transported between processing assemblies within a transport space formed by a transport chamber assembly. The processing assembly includes a processing space in which the substrate is processed. Optionally, the support chuck may be detached from the lift assembly while being transported between processing assemblies. Once the substrate and support chuck are positioned on the lift assembly, the lift assembly raises the substrate and support chuck to an upper processing position. While in the upper processing position, the surfaces of the processing assembly and the support chuck are sealed to each other, forming a fluidly separated processing space. The processing space is fluidly separated from the transport space formed by the transport chamber assembly.

[0179] By separating the processing space from the transfer space through the movement of the lift assembly, it becomes possible to adjust each processing space to a different pressure, and furthermore, to perform different substrate processing steps within each processing assembly in the transfer chamber assembly. Even when different processing steps require different pressures and temperatures, different processing steps can be performed within each processing space. The volume of the processing space is also minimized by using a support chuck as a sealing member within the processing assembly. Minimizing the processing space reduces the amount of process gas and purge gas required during each process. Additionally, by sealing between each processing space and the transfer space, leakage of process gas into the transfer chamber is minimized.

[0180] While the foregoing description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is defined by the following claims.

Claims

1. A device configured to process multiple substrates simultaneously, A transfer assembly having a transfer device, Support chuck and, Multiple processing assemblies coupled to the transport space, Equipped with, The support chuck, The substrate support surface and, An edge ring positioned on the outside of the substrate support surface, The chuck seal surface located on the outside of the edge ring and Equipped with, Each of the aforementioned processing assemblies, One or more processing chamber walls partially define the processing chamber space, A lift assembly configured to move the support chuck between a transfer position and a processing position, Bellows assembly and The bellows assembly is equipped with, A ring, Bellows and, The bellows connects to the ring and includes a stepped portion with an upper sealing surface. Equipped with, The upper sealing surface, when the support chuck is in the processing position, forms a separation seal together with the chuck sealing surface and forms a sealed processing chamber space between one or more processing chamber walls and the support chuck that is fluidly separated from the transfer space; the chuck sealing surface is positioned away from the upper sealing surface when the support chuck is in the transfer position; and the transfer space is in fluid communication with the processing chamber space when the support chuck is in the transfer position. Device.

2. The apparatus according to claim 1, wherein the bellows assembly further comprises a covering, and the stepped portion contacts the support chuck and the covering when in the processing position.

3. The apparatus according to claim 1, wherein the bellows assembly is an extendable bellows assembly, and is configured to extend when the chuck seal surface is positioned in contact with the upper seal surface.

4. The apparatus according to claim 3, wherein the bellows assembly and the upper sealing surface are part of a chamber sealing member, and the chamber sealing member further includes a bottom bellows support ring connected to the bellows assembly.

5. The apparatus according to claim 1, wherein a channel is disposed inside the upper sealing surface that is in fluid communication with the chuck sealing surface, and the chuck sealing surface has one or more grooves and corresponding O-rings disposed in the one or more grooves.

6. The apparatus according to claim 1, wherein the transfer space is fluidly connected to a first vacuum pump, and the processing chamber space is fluidly connected to a second vacuum pump.

7. The apparatus according to claim 1, wherein the bellows assembly is a compression bellows assembly and is configured to be compressed when the chuck seal surface is positioned in contact with the upper seal surface.

8. The apparatus according to claim 7, wherein the lift assembly is configured to pass through the bellows and translate the chuck seal surface across the transfer space, thereby forming the separation seal together with the upper seal surface.

9. The apparatus according to claim 7, wherein the bellows assembly further comprises a bellows stopper, the bellows stopper is configured to stop the bellows when the lift assembly moves the support chuck from the processing position to the transfer position.

10. The apparatus according to claim 9, wherein the bellows stopper is coupled to one or more processing chamber walls.

11. A device configured to process multiple substrates simultaneously, It comprises one or more processing assemblies, and each of the processing assemblies is One or more processing chamber walls partially define the processing chamber space, Transport space and A support chuck configured to translate between the processing chamber space and the transfer space, Magnetron assembly and A lift assembly located on the opposite side of the transfer space from the magnetron assembly, the lift assembly configured to move the support chuck between a transfer position and a processing position across the transfer space, Bellows assembly and Equipped with, The support chuck, The substrate support surface and, The chuck seal surface is arranged around the substrate support surface of the support chuck. Equipped with, The bellows assembly, A ring, Bellows and, The bellows is connected to the ring and has a stepped portion including an upper sealing surface. Equipped with, The upper sealing surface, when the support chuck is in the processing position, contacts the chuck sealing surface to form a separation seal together with the chuck sealing surface, and the separation seal, when the support chuck is in the processing position, forms a sealed processing chamber space that is fluidly separated from the transfer space, and the chuck sealing surface is positioned away from the upper sealing surface when the support chuck is in the transfer position. The transfer space is in fluid communication with the partially defined processing chamber space when the support chuck is in the transfer position. The bellows is a compression bellows assembly, configured to be compressed when the chuck seal surface is positioned in contact with the upper seal surface, in the apparatus.

12. The apparatus according to claim 11, wherein the bellows assembly and the upper sealing surface are part of a chamber sealing member, and the chamber sealing member further includes a bottom bellows support ring connected to the bellows assembly.

13. An apparatus configured to process multiple substrates simultaneously, It comprises one or more processing assemblies, and each of the processing assemblies is One or more processing chamber walls partially define the processing chamber space, Transport space and A support chuck configured to translate between the processing chamber space and the transfer space, Magnetron assembly and A lift assembly located on the opposite side of the transfer space from the magnetron assembly, the lift assembly configured to move the support chuck between a transfer position and a processing position across the transfer space, Bellows assembly and Equipped with, The support chuck, The substrate support surface and, The chuck seal surface is arranged around the substrate support surface of the support chuck. Equipped with, The bellows assembly, A ring, Bellows and, The bellows is connected to the ring and has a stepped portion including an upper sealing surface. Equipped with, The upper sealing surface, when the support chuck is in the processing position, contacts the chuck sealing surface to form a separation seal together with the chuck sealing surface, and the separation seal, when the support chuck is in the processing position, forms a sealed processing chamber space that is fluidly separated from the transfer space, and the chuck sealing surface is positioned away from the upper sealing surface when the support chuck is in the transfer position. The transfer space is in fluid communication with the partially defined processing chamber space when the support chuck is in the transfer position. The apparatus further comprises a transfer device configured to transfer the support chuck to one or more processing assemblies.

14. The apparatus according to claim 11, wherein the chuck seal surface and the upper seal surface have overlapping annular surface regions and form the separation seal.

15. An apparatus configured to process multiple substrates simultaneously, It comprises one or more processing assemblies, and each of the processing assemblies is One or more processing chamber walls partially define the processing chamber space, Transport space and A support chuck configured to translate between the processing chamber space and the transfer space, Magnetron assembly and A lift assembly located on the opposite side of the transfer space from the magnetron assembly, the lift assembly configured to move the support chuck between a transfer position and a processing position across the transfer space, Bellows assembly and Equipped with, The support chuck, The substrate support surface and, A chuck seal surface disposed around the substrate support surface of the support chuck, wherein an edge ring is disposed between the substrate support surface and the chuck seal surface. Equipped with, The bellows assembly, A ring, Bellows and, The bellows is connected to the ring and has a stepped portion including an upper sealing surface. Equipped with, The upper sealing surface, when the support chuck is in the processing position, contacts the chuck sealing surface to form a separation seal together with the chuck sealing surface, and the separation seal, when the support chuck is in the processing position, forms a sealed processing chamber space that is fluidly separated from the transfer space, and the chuck sealing surface is positioned away from the upper sealing surface when the support chuck is in the transfer position. The apparatus wherein the transfer space is in fluid communication with the partially defined processing chamber space when the support chuck is in the transfer position.

16. The apparatus according to claim 15, wherein the edge ring includes an annular upper surface, and a covering ring having a horizontal contact surface is disposed within the processing chamber space, and the horizontal contact surface has an annular surface that overlaps with the annular upper surface.

17. The apparatus according to claim 16, wherein when the chuck seal surface is positioned in contact with the upper seal surface, the annular upper surface and the horizontal contact surface are coupled to each other.

18. A device configured to process multiple substrates simultaneously, One or more walls forming at least a portion of the substrate transfer space and the substrate processing space, A lift assembly having a support chuck disposed within at least a portion of the substrate transfer space, The bellows assembly coupled to one or more walls and Equipped with, The bellows assembly, A ring, The bellows are configured to be compressed when the lift assembly translates the support chuck toward the substrate processing space, The bellows connects to the ring, and the stepped portion includes an upper sealing surface. Equipped with, The upper sealing surface, together with the chuck sealing surface of the support chuck, forms a separation seal when the support chuck is in the processing position, and the one or more walls and the chuck sealing surface of the support chuck form a sealed processing space when the support chuck is in the processing position, and the sealed processing space is fluidly separated from the substrate transfer space when the support chuck is in the processing position. The chuck sealing surface is positioned away from the upper sealing surface when the support chuck is in the transfer position. The apparatus wherein the substrate processing space is in fluid communication with the substrate transfer space when the support chuck is in the transfer position.

19. The apparatus according to claim 18, wherein the support chuck is configured to receive a substrate from a transfer device, and the transfer device is configured to place the substrate into and out of the substrate transfer space.

Images