Display device

Abstract

The present invention provides a substantially high-definition display device. A display device according to the present invention comprises first to fourth EL layers which are sequentially arranged to be adjacent to each other in one direction. The first and second EL layers emit light of a same color; and the third and fourth EL layers emit light of a same color. The color of the light emitted by the third and fourth EL layers is different from the color of the light emitted by the first and second EL layers. The first to fourth EL layers are formed by forming a first EL film and a second EL film, and dividing the first EL film and the second EL film with use of a photolithography method. The first EL film is formed into the first and second EL layers; and the second EL film is formed into the third and fourth EL layers.

Description

Display device and method for manufacturing the same

[0001] BACKGROUND OF THE INVENTION 1. Field of the Invention One embodiment of the present invention relates to a display device, a manufacturing method of a display device, a driving method of a display device, and a display module and an electronic device.

[0002] One embodiment of the present invention is not limited to the above technical field, and examples of the technical field of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), driving methods thereof, and manufacturing methods thereof.

[0003] There is a demand for higher definition display devices. Devices requiring high-definition display devices, such as devices for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), are being actively developed.

[0004] In recent years, display devices are expected to be used in a variety of applications. For example, large display devices are used in home television devices (also called televisions or television receivers), digital signage, public information displays (PIDs), etc. Furthermore, development of smartphones and tablet terminals equipped with touch panels as mobile information terminals is progressing.

[0005] As a display device, for example, a light-emitting device having a light-emitting device (also referred to as a light-emitting element) has been developed. A light-emitting device (also referred to as an EL device or an EL element) utilizing an electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to an input signal, and being capable of being driven by a DC constant voltage power supply, and is therefore applied to a display device.

[0006] Patent Literature 1 discloses a display device for VR using an organic EL device (also called an organic EL element). Patent Literature 2 discloses a large display device using an organic EL device (also called an organic EL element). Furthermore, Non-Patent Literature 1 discloses a method for manufacturing an organic optoelectronic device using standard UV photolithography.

[0007] International Publication No. 2018 / 087625 Japanese Patent Application Laid-Open No. 2019-175832

[0008] B. Lamprecht et al. , “Organic optoelectronic device fabrication using standard UV photolithography” phys. stat. sol. (RRL) 2, No. 1, p. 16-18 (2008)

[0009] When manufacturing a display device having a plurality of organic EL elements each emitting a different light color, it is necessary to form the light-emitting layers each emitting a different light color in an island shape.

[0010] For example, island-shaped light-emitting layers can be formed by vacuum deposition using a metal mask (also known as a shadow mask). However, this method can result in deviations in the shape and position of the island-shaped light-emitting layers from the design due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and the spread of the contours of the formed film due to vapor scattering. Therefore, it is difficult to form a fine pattern for the island-shaped light-emitting layer, making it difficult to achieve high-definition and high aperture ratio displays. Furthermore, during deposition, the contours of the layer can become blurred, resulting in thinning of the edge portions. In other words, the thickness of the island-shaped light-emitting layer can vary depending on the location.

[0011] An object of one embodiment of the present invention is to provide a display device with substantially high resolution.An object of one embodiment of the present invention is to provide a display device that can display a high-resolution image.An object of one embodiment of the present invention is to provide a display device that can display a high-quality image.An object of one embodiment of the present invention is to provide a highly reliable display device.

[0012] An object of one embodiment of the present invention is to provide a method for manufacturing a display device with substantially high resolution.An object of one embodiment of the present invention is to provide a method for manufacturing a display device that can display a high-resolution image.An object of one embodiment of the present invention is to provide a method for manufacturing a display device that can display a high-quality image.An object of one embodiment of the present invention is to provide a method for manufacturing a highly reliable display device.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with a high yield.

[0013] An object of one embodiment of the present invention is to provide a method for driving a display device that is substantially high-definition.An object of one embodiment of the present invention is to provide a method for driving a display device that can display a high-resolution image.An object of one embodiment of the present invention is to provide a method for driving a display device that can display a high-quality image.

[0014] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims.

[0015] One embodiment of the present invention is a display device including a first pixel electrode, a second pixel electrode, a third pixel electrode, and a fourth pixel electrode; a first EL layer over the first pixel electrode, a second EL layer over the second pixel electrode, a third EL layer over the third pixel electrode, and a fourth EL layer over the fourth pixel electrode, in which the first EL layer, the second EL layer, the third EL layer, and the fourth EL layer are arranged adjacent to each other in this order in one direction; the first EL layer and the second EL layer emit light of the same color; the third EL layer and the fourth EL layer emit light of the same color; and the third and fourth EL layers emit light of a different color from the first and second EL layers.

[0016] Alternatively, in the above aspect, the semiconductor device may include a first transistor, a second transistor, a third transistor, and a fourth transistor, in which one of a source or a drain of the first transistor is electrically connected to a first pixel electrode, one of a source or a drain of the second transistor is electrically connected to a second pixel electrode, one of a source or a drain of the third transistor is electrically connected to a third pixel electrode, and one of a source or a drain of the fourth transistor is electrically connected to a fourth pixel electrode, and any one or more of the first to fourth transistors may have a metal oxide in a channel formation region.

[0017] Alternatively, in the above embodiment, insulating layers may be provided in a region between the first EL layer and the second EL layer, a region between the second EL layer and the third EL layer, and a region between the third EL layer and the fourth EL layer.

[0018] Alternatively, in the above aspect, the insulating layer may include an organic material.

[0019] Alternatively, in the above aspect, the insulating layer may include a photosensitive material.

[0020] Alternatively, in the above embodiment, a common layer may be provided on the first to fourth EL layers and on the insulating layer, and a common electrode may be provided on the common layer, and the common layer may include at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0021] Alternatively, one embodiment of the present invention is a method for manufacturing a display device, in which a first pixel electrode, a second pixel electrode, a third pixel electrode, and a fourth pixel electrode are formed, a first EL film is formed over the first and second pixel electrodes, and a second EL film is formed over the third and fourth pixel electrodes, respectively, and the first EL film is processed to form a first EL layer over the first pixel electrode and a second EL layer over the second pixel electrode, and the second EL film is processed to form a third EL layer over the third pixel electrode and a fourth EL layer over the fourth pixel electrode, so that the first EL layer, the second EL layer, the third EL layer, and the fourth EL layer are arranged adjacent to each other in this order in one direction.

[0022] Alternatively, in the above embodiment, the first and second EL layers may emit light of a different color from the third and fourth EL layers.

[0023] Alternatively, in the above embodiment, the first EL film and the second EL film may be formed by a vapor deposition method using a metal mask.

[0024] Alternatively, in the above embodiment, the first EL film and the second EL film may be formed by a wet method.

[0025] Alternatively, in the above embodiment, after forming the first EL film and the second EL film, a sacrificial film may be formed on the first EL film and the second EL film, a resist mask may be formed on the sacrificial film, and the sacrificial film, the first EL film, and the second EL film may be processed to form first to fourth EL layers and first to fourth sacrificial layers on the first to fourth EL layers.

[0026] Alternatively, in the above embodiment, after the first to fourth EL layers are formed, an insulating film may be formed to cover the first to fourth EL layers, and the insulating film may be processed to form insulating layers in the region between the first EL layer and the second EL layer, the region between the second EL layer and the third EL layer, and the region between the third EL layer and the fourth EL layer.

[0027] Alternatively, in the above embodiment, the insulating film may be formed by spin coating, spray coating, or screen printing.

[0028] Alternatively, in the above embodiment, a photosensitive material may be used as the insulating film, and the insulating film may be processed by photolithography.

[0029] Alternatively, in the above embodiment, at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer may be formed as a common layer on the first to fourth EL layers, and a common electrode may be formed on the common layer.

[0030] Alternatively, one embodiment of the present invention is a driving method for a display device including a first subpixel, a second subpixel adjacent to the first subpixel and emitting light of the same color as the first subpixel, a third subpixel emitting light of a color different from the first and second subpixels, and a fourth subpixel adjacent to the third subpixel and emitting light of the same color as the third subpixel, wherein the first to fourth subpixels are arranged in one direction, the driving method including a fifth subpixel, a sixth subpixel adjacent to the fifth subpixel and emitting light of a color different from that of the fifth subpixel, a seventh subpixel emitting light of the same color as the fifth subpixel, and an eighth subpixel adjacent to the seventh subpixel and emitting light of the same color as the sixth subpixel, wherein the fifth to eighth subpixels are arranged in one direction. a fifth value is generated based on the first and third values, and a sixth value is generated based on the second and fourth values; and the first subpixel emits light having a luminance corresponding to the first value, the second subpixel emits light having a luminance corresponding to the fifth value, the third subpixel emits light having a luminance corresponding to the third value, and the fourth subpixel emits light having a luminance corresponding to the sixth value.

[0031] Alternatively, in the above aspect, the fifth value may include the sum of the value obtained by multiplying the first value by the first coefficient and the value obtained by multiplying the third value by the second coefficient, and the sixth value may include the sum of the value obtained by multiplying the second value by the third coefficient and the value obtained by multiplying the fourth value by the fourth coefficient.

[0032] Alternatively, in the above aspect, the first coefficient may be greater than the second coefficient, and the third coefficient may be less than the fourth coefficient.

[0033] According to one embodiment of the present invention, a substantially high-definition display device can be provided. According to one embodiment of the present invention, a display device capable of displaying a high-resolution image can be provided. According to one embodiment of the present invention, a display device capable of displaying a high-quality image can be provided. According to one embodiment of the present invention, a highly reliable display device can be provided.

[0034] According to one embodiment of the present invention, a method for manufacturing a display device with substantially high resolution can be provided. According to one embodiment of the present invention, a method for manufacturing a display device that can display a high-resolution image can be provided. According to one embodiment of the present invention, a method for manufacturing a display device that can display a high-quality image can be provided. According to one embodiment of the present invention, a method for manufacturing a highly reliable display device can be provided. It is an object of one embodiment of the present invention to provide a method for manufacturing a display device with high yield.

[0035] According to one embodiment of the present invention, a method for driving a display device that is substantially high-definition can be provided. According to one embodiment of the present invention, a method for driving a display device that can display a high-resolution image can be provided. According to one embodiment of the present invention, a method for driving a display device that can display a high-quality image can be provided.

[0036] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims.

[0037] FIG. 1 is a top view showing a structural example of a display device. FIGS. 2A to 2D are cross-sectional views showing a structural example of a display device. FIGS. 3A, 3B, 3C1, and 3C2 are cross-sectional views showing a structural example of a display device. FIG. 4 is a cross-sectional view showing a structural example of a display device. FIGS. 5A to 5E are cross-sectional views showing a structural example of a display device. FIGS. 6A to 6C are cross-sectional views showing a structural example of a display device. FIGS. 7A to 7D are cross-sectional views showing an example of a manufacturing method of a display device. FIG. 8A is a top view showing an example of a manufacturing method of a display device. FIG. 8B is a cross-sectional view showing an example of a manufacturing method of a display device. FIG. 9A is a top view showing an example of a manufacturing method of a display device. FIG. 9B is a cross-sectional view showing an example of a manufacturing method of a display device. FIGS. 10A to 10C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 11A and 11B are cross-sectional views showing an example of a manufacturing method of a display device. FIG. 12 is a flowchart showing an example of a method for driving a display device. FIG. 13 is a top view for explaining an example of a method for driving a display device. FIG. 14A is a top view showing a structural example of a display device. FIG. 14B is a cross-sectional view showing a structural example of a display device. FIGS. 15A and 15B are cross-sectional views showing an example of a manufacturing method of a display device. FIG. 15C is a top view showing an example of a manufacturing method of a display device. FIG. 16 is a top view showing a structural example of a display device. FIGS. 17A to 17D are cross-sectional views showing a structural example of a display device. FIG. 18 is a top view showing a structural example of a display device. FIG. 19A is a top view showing a structural example of a display device. FIG. 19B is a cross-sectional view showing a structural example of a display device. FIG. 20 is a top view showing a structural example of a display device. FIG. 21 is a top view showing a structural example of a display device. FIGS. 22A and 22B are perspective views showing a structural example of a display device. FIGS. 23A, 23B1, and 23B2 are cross-sectional views showing a structural example of a display device. FIG. 24 is a cross-sectional view showing a structural example of a display device. FIG. 25 is a cross-sectional view showing a structural example of a display device. FIG. 26 is a cross-sectional view showing a structural example of a display device. FIG. 27 is a cross-sectional view showing a structural example of a display device. Fig. 28 is a cross-sectional view showing a configuration example of a display device. Fig. 29 is a perspective view showing a configuration example of a display device. Fig. 30A is a cross-sectional view showing a configuration example of a display device. Figs. 30B and 30C are cross-sectional views showing configuration examples of a transistor.31A and 31B1 to 31B4 are cross-sectional views showing configuration examples of a display device. FIGS. 32A to 32F are diagrams showing configuration examples of a light-emitting element. FIGS. 33A to 33D are diagrams showing an example of an electronic device. FIGS. 34A to 34F are diagrams showing an example of an electronic device. FIGS. 35A to 35F are diagrams showing an example of an electronic device. FIGS. 36A to 36G are diagrams showing an example of an electronic device. FIGS. 37A to 37F are diagrams showing an example of an electronic device. FIGS. 38A and 38B are top views showing the configuration of a display device according to an example. FIGS. 39A1, 39A2, 39B1, and 39B2 are images according to an example. FIG. 40 is a top view for explaining a method of driving a display device according to an example. FIGS. 41A1, 41A2, 41B1, and 41B2 are images according to an example. FIGS. 42A and 42B are top views showing the configuration of a display device according to an example. FIGS. 43A1, 43A2, 43B1, and 43B2 are images according to the examples. FIGS. 44A and 44B are top views showing the configuration of a display device according to the examples. FIGS. 45A1, 45A2, 45B1, and 45B2 are images according to the examples. FIGS. 46A and 46B are top views showing the configuration of a display device according to the examples. FIGS. 47A1, 47A2, 47B1, and 47B2 are images according to the examples. FIGS. 48A and 48B are top views showing the configuration of a display device according to the examples. FIGS. 49A1, 49A2, 49B1, and 49B2 are images according to the examples.

[0038] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0039] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0040] Furthermore, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0041] It should be noted that the terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0042] In this specification etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0043] Embodiment 1 In this embodiment, a display device according to one embodiment of the present invention, a manufacturing method thereof, and a driving method thereof will be described with reference to drawings.

[0044] One embodiment of the present invention relates to a display device in which subpixels are arranged in a matrix, and each subpixel is provided with a light-emitting element. The light-emitting element has an island-shaped light-emitting layer, and the light-emitting layer emits light, allowing the display device to perform display. In the display device of one embodiment of the present invention, light-emitting layers are formed separately for subpixels of different colors. Here, in the display device of one embodiment of the present invention, multiple subpixels emitting light of the same color are arranged adjacently not only in the column direction but also in the row direction. In other words, the display device has a structure in which multiple subpixels emitting light of the same color are independently divided.

[0045] In this specification, for example, two subpixels that have the same coordinate representing their row positions but differ by one in coordinate representing their column positions are referred to as subpixels adjacent in the row direction. For example, the subpixel in the first row and second column is adjacent in the row direction to the subpixel in the first row and first column. Also, two subpixels that have the same coordinate representing their column positions but differ by one in coordinate representing their row positions are referred to as subpixels adjacent in the column direction. For example, the subpixel in the second row and first column is adjacent in the column direction to the subpixel in the first row and first column. Similar expressions can be used for elements other than subpixels that are arranged in a matrix. For example, when dividing multiple subpixels that emit light of the same color into four, the row direction can be divided into two and the column direction can be divided into two.

[0046] To fabricate a display device having the above configuration, a pixel electrode is formed for each sub-pixel, and then a light-emitting film is formed by, for example, vacuum deposition using a metal mask. The light-emitting film is formed on the plurality of pixel electrodes. The light-emitting film is then processed by, for example, photolithography. This divides the light-emitting film into sub-pixels, allowing island-shaped light-emitting layers to be formed for each sub-pixel. It should be noted that processing the light-emitting film using photolithography as few times as possible is preferable because this improves manufacturing costs and manufacturing yield. The number of times the light-emitting film is processed using photolithography is preferably three or less times, and more preferably once.

[0047] As described above, for example, it is difficult to form a fine pattern of the light-emitting layer by vacuum evaporation using a metal mask. On the other hand, for example, a fine pattern can be formed by processing a film using photolithography. Therefore, for example, by processing a light-emitting film formed by vacuum evaporation using a metal mask using photolithography, the island-shaped light-emitting layer can be formed into a fine pattern. Therefore, the subpixels can be miniaturized, and the display device of one embodiment of the present invention can be a display device with substantially high resolution. Furthermore, the display device of one embodiment of the present invention can be a display device capable of displaying high-resolution images.

[0048] As described above, for example, in a vacuum evaporation method using a metal mask, the thickness of the edge of the light-emitting layer may become thin. On the other hand, in the above-described manufacturing method of a display device, for example, the edge of the light-emitting film formed by vacuum evaporation using a metal mask can be removed by processing using a photolithography method. Therefore, the display device of one embodiment of the present invention can be a display device in which the thickness of the light-emitting layer is uniform, specifically, a display device in which the difference in thickness between the center and the edge of the light-emitting layer is small.

[0049] 1 is a top view illustrating a configuration example of a display device 100, which is a display device according to one embodiment of the present invention. The display device 100 includes a display portion in which a plurality of pixels 103 are arranged in a matrix and a connection portion 140 located outside the display portion. The connection portion 140 can also be called a cathode contact portion.

[0050] The pixel 103 shown in Fig. 1 is composed of three subpixels: subpixel 110a, subpixel 110b, and subpixel 110c. The subpixels 110a, 110b, and 110c each have a light-emitting element that emits light of a different color. Examples of the subpixels 110a, 110b, and 110c include three subpixels of red (R), green (G), and blue (B), and three subpixels of yellow (Y), cyan (C), and magenta (M). It can be said that a stripe arrangement is applied to the subpixels 110 shown in Fig. 1.

[0051] In this specification and the like, when describing matters common to, for example, the subpixels 110a, 110b, and 110c, they may be referred to as the subpixels 110. When describing matters common to other components distinguished by alphabets, they may also be described using symbols without the alphabets.

[0052] 1 shows the sub-pixels 110 in the first row and first column to the second row and sixth column. These sub-pixels 110 form the pixel 103 in the second row and second column.

[0053] In this specification, the row direction is referred to as the X direction, and the column direction is referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0054] In this specification and the like, symbols such as [ , ] are used to distinguish between, for example, the pixels 103 and sub-pixels 110 arranged in a matrix. Similar notations may be used for other elements. Furthermore, for example, the position of an element represented using symbols [ , ] may be referred to as a coordinate.

[0055] As shown in FIG. 1 , the subpixels 110 in the first row, first column, the second row, the first row, and the second row, second column are subpixels 110a; the subpixels 110 in the first row, third column, the fourth row, the third row, and the fourth row are subpixels 110b; and the subpixels 110 in the first row, fifth column, the sixth row, the fifth column, and the sixth row are subpixels 110c. That is, the subpixels 110 emitting light of the same color are arranged adjacently in at least two rows and two columns. In other words, the subpixels 110 emitting light of the same color are divided into at least two in the row direction and two in the column direction. Note that the subpixels 110 emitting light of the same color may be arranged adjacently in three or more columns. Furthermore, the subpixels 110 emitting light of the same color can be arranged adjacently in three or more rows. For example, all the subpixels 110 in the same column can emit light of the same color.

[0056] When the subpixels 110 are arranged as described above, for example, pixel 103[1,1] can be configured by subpixels 110a[1,1], 110b[1,3], and 110c[1,5]. Furthermore, pixel 103[1,2] can be configured by subpixels 110a[1,2], 110b[1,4], and 110c[1,6]. Furthermore, pixel 103[2,1] can be configured by subpixels 110a[2,1], 110b[2,3], and 110c[2,5]. Furthermore, pixel 103[2,2] can be configured by subpixels 110a[2,2], 110b[2,4], and 110c[2,6]. That is, for example, the sub-pixels 110 constituting pixel 103[1,1] and the sub-pixels 110 constituting pixel 103[1,2] can be arranged alternately, and the sub-pixels 110 constituting pixel 103[2,1] and the sub-pixels 110 constituting pixel 103[2,2] can be arranged alternately.

[0057] 1 shows an example in which the connection unit 140 is located below the display unit when viewed from above, but this is not particularly limited. The connection unit 140 only needs to be located in at least one of the upper, right, left, and lower sides of the display unit when viewed from above, and may be located so as to surround all four sides of the display unit. The top surface shape of the connection unit 140 may be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like. Furthermore, the connection unit 140 may be singular or plural.

[0058] Fig. 2A is a cross-sectional view showing an example of the configuration between dashed dotted lines A1-A2 in Fig. 1. Fig. 2B is a cross-sectional view showing an example of the configuration between dashed dotted lines B1-B2 in Fig. 1.

[0059] 2A and 2B , the display device 100 has a light-emitting element 130a, a light-emitting element 130b, and a light-emitting element 130c provided on a layer 101 including a transistor. The light-emitting element 130a is provided in the sub-pixel 110a shown in Fig. 1, the light-emitting element 130b is provided in the sub-pixel 110b shown in Fig. 1, and the light-emitting element 130c is provided in the sub-pixel 110c shown in Fig. 1. In other words, the light-emitting element 130a, the light-emitting element 130b, and the light-emitting element 130c emit light of different colors.

[0060] A protective layer 131 is provided to cover the light-emitting elements 130. A substrate 120 is bonded onto the protective layer 131 with a resin layer 122. An insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting elements 130. Furthermore, among the regions between adjacent light-emitting elements 130, an insulating layer 121 is provided in the region between the light-emitting elements 130 that emit light of different colors, and the insulating layer 121 and the insulating layer 125 and the insulating layer 127 are provided on the insulating layer 121.

[0061] 2A and 2B show a plurality of insulating layers 125 and insulating layers 127, but when the display device 100 is viewed from above, the plurality of insulating layers 125 and insulating layers 127 may be connected to each other. That is, the display device 100 may have, for example, one insulating layer 125 and one insulating layer 127. Note that the display device 100 may have a plurality of insulating layers 125 that are separated from each other, or may have a plurality of insulating layers 127 that are separated from each other.

[0062] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to the substrate on which the light-emitting element 130 is formed, a bottom emission type that emits light toward the substrate on which the light-emitting element 130 is formed, and a dual emission type that emits light to both sides.

[0063] The transistor-containing layer 101 may have, for example, a stacked structure in which a plurality of transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The transistor-containing layer 101 may have a recess between adjacent light-emitting elements 130. For example, a recess may be provided in an insulating layer located on the outermost surface of the transistor-containing layer 101. A configuration example of the transistor-containing layer 101 will be described later in a later embodiment.

[0064] The light-emitting element 130a emits, for example, red (R) light. The light-emitting element 130b emits, for example, green (G) light. The light-emitting element 130b emits, for example, blue (B) light. Furthermore, the light-emitting elements 130a, 130b, and 130c may each emit yellow (Y), cyan (C), or magenta (M) light.

[0065] As the light-emitting elements 130a, 130b, and 130c, it is preferable to use EL elements such as organic light-emitting diodes (OLEDs) or quantum-dot light-emitting diodes (QLEDs). Examples of light-emitting materials included in the EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (e.g., quantum dot materials), and thermally activated delayed fluorescence (TADF materials). Note that the TADF material may be a material that is in thermal equilibrium between a singlet excited state and a triplet excited state. Such TADF materials have a short emission lifetime (excitation lifetime), which can suppress a decrease in the efficiency of the light-emitting element in a high-brightness region.

[0066] The light-emitting element has an EL layer between a pair of electrodes, one of which is sometimes referred to as a pixel electrode and the other as a common electrode.

[0067] The light-emitting element 130 includes a pixel electrode 111 on the layer 101 including a transistor, an island-shaped EL layer 113 on the pixel electrode 111 , a common layer 114 on the EL layer 113 , and a common electrode 115 on the common layer 114 .

[0068] The EL layer 113 includes at least a light-emitting layer (a layer containing a light-emitting organic compound). The EL layer 113 preferably includes a light-emitting layer and a carrier transport layer on the light-emitting layer. This prevents the light-emitting layer from being exposed to the outermost surface during the manufacturing process of the display device 100, thereby reducing damage to the light-emitting layer. This improves the reliability of the display device 100.

[0069] The EL layer 113 may have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, the EL layer 113 may have a structure in which a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer are stacked in this order from the pixel electrode 111 side. Alternatively, the EL layer 113 may have a structure in which an electron injection layer, an electron transport layer, a light-emitting layer, and a hole transport layer are stacked in this order from the pixel electrode 111 side.

[0070] In this specification and the like, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer," a hole transport layer or an electron transport layer may be referred to as a "carrier transport layer," and a hole block layer or an electron block layer may be referred to as a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable from each other depending on their cross-sectional shapes, properties, etc. Furthermore, one layer may have two or three functions among the carrier injection layer, carrier transport layer, and carrier block layer.

[0071] The common layer 114 has, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may have a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer. The common layer 114 and the common electrode 115 are shared by the plurality of light-emitting elements 130, for example, by all of the light-emitting elements 130.

[0072] The structure of the light-emitting element of this embodiment is not particularly limited, and may be a single structure or a tandem structure. Note that examples of the structure of the light-emitting element will be described later in the following embodiments.

[0073] The EL layer 113 included in the light-emitting element 130a is referred to as an EL layer 113a, the EL layer 113 included in the light-emitting element 130b is referred to as an EL layer 113b, and the EL layer 113 included in the light-emitting element 130c is referred to as an EL layer 113c.

[0074] As described above, the insulating layer 121 is provided in the region between adjacent light-emitting elements 130 that emit light of different colors. The insulating layer 121 is provided so as to cover the ends of the pixel electrodes 111. This makes it possible to prevent short-circuiting of the pixel electrodes 111 between adjacent light-emitting elements 130. This makes it possible to prevent erroneous emission of light by the light-emitting elements 130.

[0075] The insulating layer 121 can have a single-layer structure or a stacked-layer structure using one or both of an inorganic insulating film and an organic insulating film.

[0076] When an inorganic insulating film is used as the insulating layer 121 covering the end of the pixel electrode 111, impurities are less likely to enter the EL layer 113 than when an organic insulating film is used, thereby improving the reliability of the light-emitting element 130. When an organic insulating film is used as the insulating layer 121, step coverage is higher and the insulating layer 121 is less affected by the shape of the pixel electrode 111 than when an inorganic insulating film is used. This prevents short circuits in the light-emitting element 130 and prevents erroneous light emission by the light-emitting element 130. Specifically, when an organic insulating film is used as the insulating layer 121, the shape of the insulating layer 121 can be processed into, for example, a tapered shape.

[0077] In this specification, the term "tapered shape" refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable that the structure has a region in which the angle between the inclined side surface and the substrate surface (also referred to as the taper angle) is less than 90°.

[0078] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resins, epoxy resins, polyimide resins, polyamide resins, polyimideamide resins, polysiloxane resins, benzocyclobutene-based resins, and phenolic resins. Examples of inorganic insulating films that can be used for the insulating layer 121 include oxide insulating films, nitride insulating films, oxynitride insulating films, and nitride oxide insulating films. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminum nitride oxide films.

[0079] The side surfaces of the EL layer 113 are covered with insulating layers 125 and 127. Furthermore, among adjacent light-emitting elements 130, those emitting light of the same color have insulating layers 125 and 127 located not only between the EL layers 113 but also between the pixel electrodes 111. This allows the insulating layers 125 and 127 to cover the side surfaces of the pixel electrodes 111. As described above, it is possible to prevent the common layer 114 or the common electrode 115 from coming into contact with the pixel electrode 111 or the EL layer 113. This makes it possible to prevent short circuits in the light-emitting elements 130. This makes it possible to prevent erroneous light emission in the light-emitting elements 130.

[0080] 2A and 2B , the insulating layer 121 is not provided in the region between adjacent light-emitting elements 130 that emit light of the same color. Even in this case, providing the insulating layers 125 and 127 can prevent short circuits of the light-emitting elements 130 and prevent erroneous light emission of the light-emitting elements 130. Note that the insulating layer 121 may be provided in the region between the light-emitting elements 130 that emit light of the same color. This can, for example, increase the symmetry of the shape of the EL layer 113.

[0081] The insulating layer 125 can be configured to be in contact with at least the side surface of the EL layer 113. The insulating layer 127 is provided on the insulating layer 125 so as to fill a recess formed in the insulating layer 125. The insulating layer 127 can be configured to overlap with at least the side surface of the EL layer 113 with the insulating layer 125 interposed therebetween.

[0082] By providing the insulating layers 125 and 127, the gaps between adjacent island-shaped layers, such as the EL layer 113 and the pixel electrode 111, can be filled, thereby reducing the unevenness of the surface on which a layer (for example, the common electrode 115) provided on the island-shaped layer is formed, and making the surface flatter. Therefore, the coverage of the common electrode 115 can be improved, and step disconnection of the common electrode 115 can be prevented. Alternatively, it is possible to suppress an increase in electrical resistance due to a local thinning of the common electrode 115 caused by the step.

[0083] In order to improve the flatness of the surfaces on which the common layer 114 and the common electrode 115 are formed, it is preferable that the heights of the upper surfaces of the insulating layers 125 and 127 are the same as or approximately the same as the heights of the upper surfaces of the ends of the EL layer 113. Furthermore, it is preferable that the upper surface of the insulating layer 127 has a flat shape, but it may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.

[0084] As described above, the insulating layer 125 can be provided so as to be in contact with the island-shaped layer, and the insulating layer 127 can be provided on the insulating layer 125. This can prevent the island-shaped layer from peeling off. The insulating layer and the island-shaped layer are brought into close contact with each other, which has the effect of fixing or adhering the adjacent island-shaped layers by the insulating layer. This can improve the reliability of the light-emitting element 130. Furthermore, the manufacturing yield of the light-emitting element 130 can be increased.

[0085] Note that it is not necessary to provide either the insulating layer 125 or the insulating layer 127. For example, by forming the insulating layer 125 to have a single-layer structure using an inorganic material, the insulating layer 125 can be used as a protective insulating layer for the EL layer 113. This can improve the reliability of the display device 100.

[0086] The insulating layer 125 has a region in contact with the side surfaces of the EL layer 113 a, the EL layer 113 b, and the EL layer 113 c, and functions as a protective insulating layer for the EL layer 113 a, the EL layer 113 b, and the EL layer 113 c. By providing the insulating layer 125, impurities (oxygen, moisture, and the like) can be prevented from entering the EL layer 113 a, the EL layer 113 b, and the EL layer 113 c from the side surfaces thereof, thereby providing a highly reliable display device.

[0087] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer in the formation of the insulating layer 127 described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) as the insulating layer 125, it is possible to form an insulating layer 125 that has few pinholes and has an excellent function of protecting the EL layer. The insulating layer 125 may also have a stacked structure of a film formed by ALD and a film formed by sputtering. For example, the insulating layer 125 may have a stacked structure of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0088] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0089] The insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. The insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. The insulating layer 125 preferably has a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0090] The insulating layer 125 has a function as a barrier insulating layer or a gettering function, which can suppress the intrusion of impurities (typically, at least one of water and oxygen) that may diffuse into each light-emitting element from the outside. With this structure, a highly reliable light-emitting element and a highly reliable display device can be provided.

[0091] The insulating layer 125 preferably has a low impurity concentration. This can prevent impurities from entering the EL layer from the insulating layer 125 and causing deterioration of the EL layer. Furthermore, a low impurity concentration in the insulating layer 125 can improve the barrier properties against at least one of water and oxygen. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration or a sufficiently low carbon concentration, or preferably both of them.

[0092] For example, the hydrogen concentration of the insulating layer 125 is 1.0×10 ２２ atoms / cm ３ Preferably, it is 9.0 x 10 or less. ２１ atoms / cm ３ More preferably, it is 8.0 × 10 or less. ２１ atoms / cm ３ More preferably, it is 6.0 × 10 or less. ２１ atoms / cm ３ For example, the insulating layer 125 is preferably an aluminum oxide film whose hydrogen concentration is in the above range.

[0093] For example, the carbon concentration of the insulating layer 125 is 2.5×10 ２１ atoms / cm ３ Preferably, it is 2.0 × 10 or less. ２１ atoms / cm ３More preferably, it is 1.0 × 10 or less. ２１ atoms / cm ３ More preferably, it is 6.0 × 10 or less. ２０ atoms / cm ３ For example, it is preferable to use an aluminum oxide film whose carbon concentration is in the above range as the insulating layer 125.

[0094] Examples of a method for forming the insulating layer 125 include a sputtering method, a chemical vapor deposition (CVD) method, a pulsed laser deposition (PLD) method, and an ALD method. The insulating layer 125 is preferably formed by an ALD method, which has good coverage.

[0095] By increasing the substrate temperature during deposition of the insulating layer 125, the insulating layer 125 can be formed with a low impurity concentration and a high barrier property against at least one of water and oxygen, even if the insulating layer 125 is thin. Therefore, the substrate temperature is preferably 60° C. or higher, more preferably 80° C. or higher, more preferably 100° C. or higher, and still more preferably 120° C. or higher. On the other hand, since the insulating layer 125 is deposited after the island-shaped EL layer is formed, it is preferably formed at a temperature lower than the heat-resistant temperature of the EL layer. Therefore, the substrate temperature is preferably 200° C. or lower, more preferably 180° C. or lower, more preferably 160° C. or lower, more preferably 150° C. or lower, and still more preferably 140° C. or lower.

[0096] Examples of the heat resistance temperature index include a glass transition point, a softening point, a melting point, a thermal decomposition temperature, and a 5% weight loss temperature, etc. The heat resistance temperature of the EL layer can be any of these temperatures, preferably the lowest temperature among these.

[0097] The insulating layer 127 provided on the insulating layer 125 has the function of planarizing recesses formed in the insulating layer 125 between adjacent light-emitting elements. In other words, the insulating layer 127 has the effect of improving the flatness of the surface on which the common electrode 115 is formed. An insulating layer containing an organic material can be suitably used as the insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the insulating layer 127. Alternatively, a photosensitive resin can be used as the photosensitive resin. A photoresist can be used as the photosensitive resin. A positive-type material or a negative-type material can be used as the photosensitive resin.

[0098] A material that absorbs visible light may be used for the insulating layer 127. The insulating layer 127 absorbs light emitted from the light-emitting element, thereby suppressing leakage of light (stray light) from the light-emitting element to an adjacent light-emitting element through the insulating layer 127. This can improve the display quality of the display device.

[0099] It is preferable to provide a protective layer 131 over the light-emitting element 130. The reliability of the light-emitting element can be improved by providing the protective layer 131. The protective layer 131 may have a single-layer structure or a stacked structure of two or more layers.

[0100] There is no restriction on the conductivity of the protective layer 131. The protective layer 131 can be made of at least one of an insulating film, a semiconductor film, and a conductive film.

[0101] The protective layer 131 has an inorganic film, which can prevent oxidation of the common electrode 115, prevent impurities (moisture, oxygen, etc.) from entering the light-emitting element 130, and so on, thereby suppressing deterioration of the light-emitting element and improving the reliability of the display device.

[0102] The protective layer 131 can be made of an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film.

[0103] The protective layer 131 preferably includes an insulating nitride film or an insulating nitride oxide film, and more preferably includes an insulating nitride film.

[0104] Alternatively, an inorganic film containing In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO), or the like can be used for the protective layer 131. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0105] When light emitted from the light-emitting element is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0106] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 131. By using such a stacked structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0107] Furthermore, the protective layer 131 may include an organic film. For example, the protective layer 131 may include both an organic film and an inorganic film.

[0108] The protective layer 131 may have a two-layer structure formed by using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed by the ALD method, and the second layer of the protective layer 131 may be formed by the sputtering method.

[0109] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical members may be disposed on the outside of the substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. The outside of the substrate 120 may also be provided with an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, or an impact absorbing layer.

[0110] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting element is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0111] The substrate 120 may be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, or the like), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, or cellulose nanofiber. The substrate 120 may be made of glass having a thickness sufficient to provide flexibility.

[0112] When a circularly polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy as a substrate included in the display device. A substrate with high optical isotropy can also be said to have small birefringence (small amount of birefringence).

[0113] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0114] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0115] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0116] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet-curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Alternatively, an adhesive sheet may be used, for example.

[0117] Materials that can be used for the gate, source, and drain of a transistor as well as conductive layers such as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0118] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as a conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting a display device, and for conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.

[0119] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0120] A conductive film that transmits visible light is used for the electrode from which light is extracted, either the pixel electrode 111 or the common electrode 115. It is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted.

[0121] The pair of electrodes (pixel electrode and common electrode) of the light-emitting element can be formed from a metal, an alloy, an electrically conductive compound, a mixture thereof, etc. Specific examples include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, an alloy containing aluminum (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy containing silver such as an alloy of silver and magnesium and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of the metals that can be used include aluminum (Al), magnesium (Mg), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing appropriate combinations of these metals. Other examples of the metals that can be used include elements belonging to Group 1 or Group 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)), rare earth metals such as europium (Eu), and ytterbium (Yb), as well as alloys containing appropriate combinations of these metals, graphene, and the like.

[0122] The light-emitting element preferably has a micro-optical resonator (microcavity) structure. Therefore, one of the pair of electrodes of the light-emitting element preferably has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other preferably has an electrode that is reflective to visible light (reflective electrode). By having the light-emitting element have a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, thereby intensifying the light emitted from the light-emitting element.

[0123] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the light emitting element. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ Preferably, it is Ωcm or less.

[0124] 2C is a cross-sectional view showing an example of the configuration between the dashed dotted line C1-C2 in FIG. 1 , and is a cross-sectional view showing an example of the configuration of the connection portion 140. In the connection portion 140, a connection electrode 123 is provided on the layer 101 including the transistor, and an insulating layer 121 is provided to cover an end of the connection electrode 123.

[0125] The common electrode 115 is electrically connected to a connection electrode 123 provided in the connection portion 140. As a result, the same potential is supplied to the common electrodes 115 of the light-emitting elements of each color. The connection electrode 123 can be made of the same material and a conductive layer formed in the same process as the pixel electrode 111.

[0126] 2C shows an example in which the common layer 114 is provided on the connection electrode 123, and the connection electrode 123 and the common electrode 115 are electrically connected to each other via the common layer 114. The common layer 114 does not have to be provided in the connection portion 140. For example, FIG. 2D shows an example in which the common layer 114 is not provided on the connection electrode 123, and the connection electrode 123 and the common electrode 115 are directly connected to each other. For example, by using a mask (also referred to as an area mask or a rough metal mask) for defining a film formation area, the regions where the common layer 114 and the common electrode 115 are formed can be changed.

[0127] Fig. 3A is an enlarged view of the area surrounded by the dashed line in Fig. 2A. As shown in Fig. 3A, the edge of the EL layer 113 can be positioned inside the edge of the pixel electrode 111.

[0128] 3B is a modified example of the configuration shown in FIG. 3A , in which the edge of the pixel electrode 111 has a tapered shape. Tapering the side surface of the pixel electrode 111 is preferable because it can improve the coverage of the insulating layer 125 provided along the side surface of the pixel electrode 111. Tapering the side surface of the pixel electrode 111 is also preferable because it can favorably remove foreign matter (for example, dust, particles, etc.) during the manufacturing process by a process such as cleaning.

[0129] 3C1 and 3C2 are modified examples of the configuration shown in Fig. 3A. Fig. 3C1 shows an example in which the edge of the EL layer 113 is aligned or approximately aligned with the edge of the pixel electrode 111. Fig. 3C2 shows an example in which the edge of the EL layer 113 is located outside the edge of the pixel electrode 111. In Fig. 3C2, the EL layer 113 is provided so as to cover the edge of the pixel electrode 111.

[0130] In addition, when the edges are aligned or approximately aligned, and when the top surface shapes are the same or approximately aligned, it can be said that at least a portion of the contours of the stacked layers overlap when viewed from above. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, it can also be said that the edges are approximately aligned, or the top surface shapes are approximately aligned.

[0131] 4 is a modified example of the configuration shown in FIG. 3A , in which the end of the pixel electrode 111 has a tapered shape and the end of the EL layer 113 is located outside (on the insulating layer 125 side) the end of the pixel electrode 111. The EL layer 113 shown in FIG. 4 is provided on the pixel electrode 111 and on the layer 101 including a transistor so as to cover the end of the pixel electrode 111. Here, since the end of the pixel electrode 111 has a tapered shape, the EL layer 113 has a tapered portion 116 in a cross-sectional view. Specifically, the EL layer 113 has the tapered portion 116 between the pixel electrode 111 and the insulating layer 125.

[0132] When the EL layer 113 is provided so as to cover the end of the pixel electrode 111, if the end of the pixel electrode 111 has a tapered shape, the coverage of the EL layer 113 with respect to the pixel electrode 111 can be improved. This can prevent the EL layer 113 from being broken and being locally thinned. Therefore, the display device 100 can be a highly reliable display device.

[0133] 4 shows an example in which the bottom surface of the insulating layer 125 is located below the bottom surface of the EL layer 113a, and the bottom surface of the EL layer 113a is located below the bottom surface of the pixel electrode 111. For example, the transistor-containing layer 101 may have a recess between the EL layers 113. As will be described in detail later, the recess is formed when the EL layer 113 is formed.

[0134] 5A to 5E show modifications of the configuration shown in Fig. 3A. In the configuration shown in Fig. 5A, the upper surface of the insulating layer 127 has a region higher than the upper surface of the EL layer 113. In this case, the upper surface of the insulating layer 127 can be configured to have a shape in which the center and its vicinity bulge in cross section, that is, a shape having a convex curved surface.

[0135] 5B , the upper surface of insulating layer 127 has a shape that gradually bulges toward the center, i.e., a convex curved surface, and a shape that is recessed in the center and its vicinity, i.e., a concave curved surface, in a cross-sectional view. Insulating layer 127 has a region that is higher than the upper surface of EL layer 113. Furthermore, display device 100 having the configuration shown in FIG. 5B has at least one of sacrificial layers 118 and 119, which will be described later, and insulating layer 127 has a region that is higher than the upper surface of EL layer 113, and this region is located on at least one of sacrificial layers 118 and 119.

[0136] In this specification and the like, the sacrificial layer may be referred to as a mask layer, and the sacrificial film may be referred to as a mask film.

[0137] 5C, the upper surface of insulating layer 127 has an area that is lower than the upper surface of EL layer 113. In addition, the upper surface of insulating layer 127 has a recessed shape in the center and its vicinity in a cross-sectional view, that is, a shape having a concave curved surface.

[0138] 5D, the upper surface of the insulating layer 125 has a region higher than the upper surface of the EL layer 113. That is, the insulating layer 125 protrudes from the surface on which the common layer 114 is to be formed, forming a convex portion.

[0139] When forming the insulating layer 125, for example, if the insulating layer 125 is formed so that its height is aligned or approximately aligned with that of the sacrificial layer, the insulating layer 125 may be formed in a protruding shape as shown in FIG. 5D.

[0140] 5E, the upper surface of the insulating layer 125 has an area that is lower than the upper surface of the EL layer 113. That is, the insulating layer 125 forms a recess on the surface where the common layer 114 is to be formed.

[0141] In this way, the insulating layer 125 and the insulating layer 127 can be applied in various shapes.

[0142] 6A, 6B, and 6C are modifications of the configurations shown in Fig. 2A, 2B, and 2C, respectively. The configurations shown in Fig. 6A to 6C differ from the configurations shown in Fig. 2A to 2C in that the insulating layer 121 is not provided.

[0143] By configuring the display device 100 without providing the insulating layer 121, it is possible to extend the light-emitting region to the edge of the pixel electrode 111, and therefore the display device 100 can be a display device with a high aperture ratio.

[0144] [Example 1 of Manufacturing Method of Display Device] Next, an example of a manufacturing method of the display device 100 having the configuration shown in Fig. 1 and Fig. 2A to Fig. 2C will be described. In the cross-sectional views showing the example of the manufacturing method, a cross-sectional view taken along dashed lines A1-A2 and C1-C2 in Fig. 1 are shown side by side.

[0145] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a display device can be formed using a sputtering method, a CVD method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an ALD method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0146] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, and knife coating.

[0147] Furthermore, when processing the thin film that constitutes the display device, it can be processed using, for example, a photolithography method. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method, etc. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0148] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0149] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, ArF laser light, etc. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet light (EUV) or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0150] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0151] First, a pixel electrode 111 and a connection electrode 123 are formed over a layer 101 including a transistor. Next, an insulating layer 121 is formed so as to cover the ends of the pixel electrode 111 and the connection electrode 123 ( FIG. 7A ). The pixel electrode 111 can be formed by, for example, spin coating, spray coating, or screen printing. The insulating layer 121 can be formed by, for example, sputtering, vacuum evaporation, CVD, or sputtering.

[0152] Next, an EL film 180a, which will later become the EL layer 113a, is formed on the pixel electrode 111 and the transistor-containing layer 101 (FIG. 7B). The EL film 180a can be formed using an FMM 191a, for example, by a vapor deposition method using the FMM 191a, specifically, by a vacuum vapor deposition method. FIG. 7B shows the film being formed using the so-called face-down method, in which the substrate is inverted so that the surface to be formed faces downward. In other drawings, when a film is formed using an FMM, the face-down method is also shown.

[0153] Furthermore, an EL film 180b, which will later become the EL layer 113b, is formed over the pixel electrode 111 and the layer 101 including the transistor (FIG. 7C). Furthermore, an EL film 180c, which will later become the EL layer 113c, is formed over the pixel electrode 111 and the layer 101 including the transistor (FIG. 7D). A top view of the EL films 180a, 180b, and 180c after they have been formed is shown in FIG. 8A. In FIG. 8A, for example, a region where two types of films overlap is indicated by a dotted line. Similar descriptions are used in the other top views.

[0154] 7C, 7D, 8A, etc., the edge of the EL film 180b overlaps with the EL film 180a, and the edge of the EL film 180c overlaps with the EL film 180b. Note that the EL film 180b and the EL film 180a do not have to overlap, and the EL film 180c and the EL film 180b do not have to overlap.

[0155] The EL films 180b and 180c can be formed by the same method as the EL film 180a. For example, the EL film 180b can be formed by a vapor deposition method using FMM191b, and the EL film 180c can be formed by a vapor deposition method using FMM191c. Here, when the EL film 180 is formed using FMM191, the insulating layer 121 can be provided to prevent the FMM191 from contacting the pixel electrode 111.

[0156] When the EL film 180 is formed using a vapor deposition method, the EL film 180 may contain a low-molecular-weight compound. The EL film 180 has at least a film (light-emitting film) containing a light-emitting compound. The EL film 180 preferably has a light-emitting film and a film that functions as a carrier transport layer on the light-emitting film. This prevents the light-emitting film from being exposed to the outermost surface during the manufacturing process of the display device 100, reducing damage to the light-emitting film. This improves the reliability of the display device 100.

[0157] The EL film 180 may have a structure in which one or more films functioning as a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, or an electron injection layer are stacked. For example, the EL film 180 may have a structure in which a film functioning as a hole injection layer, a film functioning as a hole transport layer, a light-emitting film, and a film functioning as an electron transport layer are stacked in this order. Alternatively, the EL film 180 may have a structure in which a film functioning as an electron injection layer, a film functioning as an electron transport layer, a light-emitting film, and a film functioning as a hole transport layer are stacked in this order.

[0158] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0159] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a concentration of 1×10 −６ cm ２A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0160] The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of blue, purple, blue-purple, green, yellow-green, yellow, orange, red, or the like is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance. For example, the light-emitting layer of the EL film 180a can contain a substance that emits red light. Furthermore, the light-emitting layer of the EL film 180b can contain a substance that emits green light. Furthermore, the light-emitting layer of the EL film 180c can contain a substance that emits blue light.

[0161] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0162] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0163] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0164] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material can be used.

[0165] The light-emitting layer preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material, which are a combination that easily forms an exciplex. This configuration allows efficient emission using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smooth, allowing efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting element.

[0166] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 −６ cm ２ / Vs or more is preferred. Note that other materials can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0167] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0168] The electron injection layer may be formed of, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ｘ , where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO ｘ ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used in the first layer and ytterbium is provided in the second layer.

[0169] Alternatively, an electron transporting material may be used for the electron injection layer. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring may be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, or pyridazine ring), and a triazine ring may be used.

[0170] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) of -3.6 eV to -2.3 eV. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0171] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), or 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz) can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition point (Tg) and is superior in heat resistance compared to BPhen.

[0172] Next, a sacrificial film 118A, which will later become the sacrificial layer 118, and a sacrificial film 119A, which will later become the sacrificial layer 119, are formed in this order on the EL film 180, the insulating layer 121, and the connection electrode 123. For the sacrificial film 118A and the sacrificial film 119A, a film that is highly resistant to the processing conditions of the EL film 180, specifically a film that has a large etching selectivity with respect to the EL film 180, is used.

[0173] The sacrificial films 118A and 119A can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. The sacrificial film 118A formed on and in contact with the EL film 180 is preferably formed using a method that causes less damage to the EL film 180 than the sacrificial film 119A. For example, the sacrificial film 118A is preferably formed using the ALD or vacuum deposition method rather than the sputtering method. The sacrificial films 118A and 119A are formed at a temperature lower than the heat-resistant temperature of the EL film 180. The substrate temperatures used when forming the sacrificial films 118A and 119A are typically 200° C. or lower, preferably 150° C. or lower, more preferably 120° C. or lower, more preferably 100° C. or lower, and even more preferably 80° C. or lower.

[0174] It is preferable to use a film that can be removed by wet etching for the sacrificial films 118A and 119A. By using wet etching, damage to the EL film 180 during processing of the sacrificial films 118A and 119A can be reduced compared to when dry etching is used.

[0175] It is also preferable to use a film having a large etching selectivity with respect to the sacrificial film 119A as the sacrificial film 118A.

[0176] In the process of processing the various sacrificial layers in the manufacturing method of the display device of this embodiment, it is desirable that the layers constituting the EL film (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, etc.) are not easily processed, and that the various sacrificial layers are not easily processed in the process of processing the layers constituting the EL film. It is desirable to select the material and processing method of the sacrificial layer and the processing method of the EL layer taking these factors into consideration.

[0177] In this embodiment, an example is shown in which the sacrificial layer is formed with a two-layer structure of the sacrificial film 118A and the sacrificial film 119A, but the sacrificial layer may have a single layer structure or a laminated structure of three or more layers.

[0178] The sacrificial film 118A and the sacrificial film 119A may each be, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic film such as an inorganic insulating film.

[0179] The sacrificial films 118A and 119A can each be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet light for one or both of the sacrificial films 118A and 119A is preferable because it can prevent ultraviolet light from being irradiated onto the EL layer and thereby prevent deterioration of the EL layer.

[0180] The sacrificial films 118A and 119A may each be made of a metal oxide such as In—Ga—Zn oxide. For example, an In—Ga—Zn oxide film may be formed as the sacrificial film 118A or 119A by sputtering. Other examples include indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), and indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide). Alternatively, silicon-containing indium tin oxide may also be used.

[0181] Note that, instead of the gallium, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used. In particular, it is preferable that M is one or more elements selected from gallium, aluminum, and yttrium.

[0182] The sacrificial films 118A and 119A can each be made of any of the various inorganic insulating films that can be used for the protective layer 131. In particular, oxide insulating films are preferable because they have higher adhesion to the EL layer than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial films 118A and 119A. For example, an aluminum oxide film can be formed as the sacrificial film 118A or 119A using the ALD method. Using the ALD method is preferable because it can reduce damage to the underlying layer (particularly the EL layer).

[0183] For example, an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method can be used as the sacrificial film 118A, and an inorganic film (e.g., an In—Ga—Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method can be used as the sacrificial film 119A.

[0184] The same inorganic insulating film can be used for both the sacrificial film 118A and the insulating layer 125 to be formed later. For example, an aluminum oxide film formed using an ALD method can be used for both the sacrificial film 118A and the insulating layer 125. The same deposition conditions can be applied to the sacrificial film 118A and the insulating layer 125, or different deposition conditions can be applied to each of them. For example, by depositing the sacrificial film 118A under the same conditions as the insulating layer 125, the sacrificial film 118A can be an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the sacrificial film 118A is a layer that will be mostly or completely removed in a later process, it is preferable that it be easily processed. Therefore, it is preferable that the sacrificial film 118A be deposited at a lower substrate temperature than the insulating layer 125.

[0185] One or both of the sacrificial films 118A and 119A may be made of a material that is soluble in a chemically stable solvent. Materials that are soluble in water or alcohol are particularly suitable. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature in a short time, thereby reducing thermal damage to the EL film.

[0186] The sacrificial films 118A and 119A may each be formed using a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0187] The sacrificial film 118A and the sacrificial film 119A may each be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0188] Next, a resist mask 190 is formed on the sacrificial film 119A (FIG. 8B). The resist mask 190 can be formed by applying a photosensitive resin (photoresist) and then performing exposure and development.

[0189] The resist mask may be made of either a positive resist material or a negative resist material.

[0190] The resist mask 190 is provided at a position overlapping the pixel electrode 111. It is preferable that the resist mask 190 has an island-shaped pattern for each sub-pixel 110.

[0191] Subsequently, a part of the sacrificial film 119A is removed using the resist mask 190 to form a sacrificial layer 119. The sacrificial layer 119 remains on the pixel electrode 111 and the connection electrode 123.

[0192] When etching the sacrificial film 119A, it is preferable to use etching conditions with a high selectivity so that the sacrificial film 118A is not removed by the etching. Furthermore, when processing the sacrificial film 119A, the EL film 180 is not exposed, so the range of processing methods available is wider than when processing the sacrificial film 118A. Specifically, even when a gas containing oxygen is used as an etching gas when processing the sacrificial film 119A, deterioration of the EL film 180 can be further suppressed.

[0193] Thereafter, the resist mask 190 is removed. For example, the resist mask 190 can be removed by ashing using oxygen plasma. Alternatively, the resist mask 190 can be removed by ashing using oxygen gas and CF ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３Alternatively, a noble gas (also called a rare gas) such as He may be used. Alternatively, the resist mask 190 may be removed by wet etching. At this time, the sacrificial film 118A is located on the outermost surface and the EL film 180 is not exposed, so that damage to the EL film 180 can be suppressed in the process of removing the resist mask 190. Furthermore, the range of options for removing the resist mask 190 can be expanded.

[0194] Next, the sacrificial layer 119 is used as a mask (also referred to as a hard mask) to remove part of the sacrificial film 118A, thereby forming the sacrificial layer 118.

[0195] The sacrificial films 118A and 119A can be processed by wet etching or dry etching, respectively. The sacrificial films 118A and 119A are preferably processed by anisotropic etching.

[0196] Compared to the case of using dry etching, using wet etching can reduce damage to the EL film 180 when processing the sacrificial films 118A and 119A. When using wet etching, it is preferable to use a chemical solution such as a developer, a tetramethylammonium hydroxide aqueous solution (TMAH), diluted hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0197] When dry etching is used, deterioration of the EL film 180 can be suppressed by not using a gas containing oxygen as the etching gas. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing a noble gas (also called a rare gas) such as He as the etching gas.

[0198] For example, when an aluminum oxide film formed by ALD is used as the sacrificial film 118A, CHF ３The sacrificial film 118A can be processed by dry etching using He. When an In-Ga-Zn oxide film formed by sputtering is used as the sacrificial film 119A, the sacrificial film 119A can be processed by wet etching using diluted phosphoric acid. ４ The sacrificial film 119A may be processed by dry etching using diluted phosphoric acid and Ar. Alternatively, the sacrificial film 119A may be processed by wet etching using diluted phosphoric acid. When a tungsten film formed by sputtering is used as the sacrificial film 119A, SF ６ , C.F. ４ and O ２ , or CF ４ and Cl ２ and O ２ The sacrificial film 119A can be processed by dry etching using the above method.

[0199] Next, the EL film 180 is processed to form the EL layer 113. For example, the sacrificial layers 119 and 118 are used as hard masks to remove portions of the EL film 180, thereby forming the EL layer 113 (FIGS. 9A and 9B). Specifically, the EL film 180a is removed to form the EL layer 113a, the EL film 180b is removed to form the EL layer 113b, and the EL film 180c is removed to form the EL layer 113c. Note that a portion of the EL film 180b may remain on the EL layer 113a. Also, a portion of the EL film 180c may remain on the EL layer 113b.

[0200] As shown in FIGS. 8A and 9A , the EL film 180 can be processed to form a plurality of EL layers 113. That is, the EL film 180 can be divided into a plurality of EL layers 113. Although FIGS. 8A and 9A illustrate an example in which the EL film 180a is divided into two rows and two columns of EL layers 113a, the EL film 180b is divided into two rows and two columns of EL layers 113b, and the EL film 180c is divided into two rows and two columns of EL layers 113c, one embodiment of the present invention is not limited thereto. For example, the EL film 180 may be divided into three or more rows of EL layers 113 or into three or more columns of EL layers 113. Note that the EL film 180 does not need to be divided in either the row direction or the column direction. In this case, the EL layers 113 can have a strip shape.

[0201] The EL film 180 is preferably processed by anisotropic etching. Anisotropic dry etching is particularly preferable. Alternatively, wet etching may be used. Note that when etching the EL film 180, for example, the top surface of the insulating layer located on the top surface of the transistor-containing layer 101 may be etched. This may result in the formation of a recess in the transistor-containing layer 101.

[0202] When dry etching is used, deterioration of the EL film 180 can be suppressed by not using a gas containing oxygen as the etching gas.

[0203] Alternatively, a gas containing oxygen may be used as the etching gas. By using an etching gas containing oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can reduce damage to the EL film 180. Furthermore, problems such as adhesion of reaction products that occur during etching can be reduced.

[0204] When dry etching is used, for example, H ２ , C.F. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３It is preferable to use a gas containing one or more of the following gases as the etching gas: H, Ar, etc., or a noble gas (also called a rare gas) such as He, Ar, etc. Alternatively, it is preferable to use a gas containing one or more of these gases and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, H ２ and a gas containing Ar, or CF ４ A gas containing CF and He can be used as an etching gas. ４ A gas containing He and oxygen can be used as the etching gas.

[0205] As described above, in one embodiment of the present invention, the resist mask 190 is formed over the sacrificial film 119A, and part of the sacrificial film 119A is removed using the resist mask 190 to form the sacrificial layer 119. Then, part of the EL film 180 is removed using the sacrificial layer 119 as a hard mask to form the EL layer 113. Therefore, it can be said that the EL layer 113 is formed by processing the EL film 180 by photolithography. Note that part of the EL film 180 may be removed using the resist mask 190, and then the resist mask 190 may be removed.

[0206] As described above, it is difficult to form a fine pattern by, for example, a vacuum evaporation method using a metal mask. Therefore, if an attempt is made to form the EL layer 113 without using photolithography, it is difficult to achieve high-definition display devices. On the other hand, in a manufacturing method of a display device according to one embodiment of the present invention, the EL film 180 is formed by, for example, a vacuum evaporation method using a metal mask, and then the EL film 180 is divided by photolithography to form the EL layer 113. Therefore, the EL layer 113 can be patterned finely. Therefore, the subpixel 110 can be miniaturized, and therefore the pixel 103 can be miniaturized. As described above, the display device 100 can be a substantially high-definition display device. Furthermore, the display device 100 can be a display device capable of displaying high-resolution images.

[0207] Furthermore, EL films 180 of different colors can be stacked by processing the EL film 180 to form the EL layer 113. This allows a wide margin for alignment of the FMM 191, and allows the EL layer 113 to have a fine pattern.

[0208] Furthermore, as described above, when a layer is formed by, for example, vacuum evaporation using a metal mask, the thickness of the edge of the layer may be thinner than the thickness of the central portion of the layer. On the other hand, in the manufacturing method of a display device according to one embodiment of the present invention, at least a part of the edge of the EL film 180 can be removed by processing using photolithography. Therefore, the display device 100 can be a display device in which the thickness of the EL layer 113 is uniform, specifically, a display device in which the difference in thickness between the central portion and the edge of the EL layer 113 is small.

[0209] It should be noted that when processing the EL film 180, a method of processing the EL film 180 directly above the light-emitting film of the EL film 180 using photolithography is conceivable. In this case, damage (e.g., damage due to processing) may occur in the light-emitting layer, which may significantly impair reliability. Therefore, to manufacture the display device 100, sacrificial layers 118 and 119 are formed on a film located above the light-emitting film (e.g., a film that functions as a carrier transport layer or carrier injection layer, more specifically, an electron transport layer, a hole transport layer, an electron injection layer, or a hole injection layer), and the light-emitting film is processed. This makes it possible to make the display device 100 a highly reliable display device.

[0210] Subsequently, an insulating film 125A, which will later become the insulating layer 125, is formed so as to cover the EL layer 113, the sacrificial layer 118, and the sacrificial layer 119.

[0211] As the insulating film 125A, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less under conditions in which the substrate temperature is, for example, 60°C or more, 80°C or more, 100°C or more, or 120°C or more and 200°C or less, 180°C or less, 160°C or less, 150°C or less, or 140°C or less.

[0212] The insulating film 125A is preferably an aluminum oxide film formed by, for example, the ALD method.

[0213] Next, an insulating film 127A is formed on the insulating film 125A ( FIG. 10A ). A photosensitive material, such as a photosensitive resin, can be used for the insulating film 127A. The insulating film 127A can be formed using a wet film formation method, such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife printing, slit coating, roll coating, curtain coating, or knife coating. It is particularly preferable to form the organic insulating film that will become the insulating layer 127 by spin coating.

[0214] The insulating films 125A and 127A are preferably formed by a method that causes less damage to the EL layer 113. In particular, since the insulating film 125A is formed in contact with the side surface of the EL layer 113, it is preferably formed by a method that causes less damage to the EL layer 113 than the insulating film 127A. Furthermore, the insulating films 125A and 127A are each formed at a temperature lower than the heat resistance temperature of the EL layer 113. The substrate temperature when forming the insulating films 125A and 127A is typically 200° C. or lower, preferably 180° C. or lower, more preferably 160° C. or lower, more preferably 150° C. or lower, and more preferably 140° C. or lower. For example, an aluminum oxide film can be formed as the insulating film 125A by an ALD method. The ALD method is preferable because it can reduce film formation damage and form a film with high coverage.

[0215] Next, the insulating film 127A is processed to form the insulating layer 127. For example, when a photosensitive material is used for the insulating film 127A, the insulating layer 127 can be formed by exposing and developing the insulating film 127A. Etching may be performed to adjust the height of the surface of the insulating layer 127. The insulating layer 127 may be processed by ashing using oxygen plasma, for example.

[0216] Subsequently, at least a portion of the insulating film 125A is removed to form the insulating layer 125. In addition, the sacrificial layers 119 and 118 are removed (FIG. 10B), thereby exposing at least a portion of the upper surface of the EL layer 113 and the upper surface of the connection electrode 123.

[0217] The insulating film 125A is preferably processed by dry etching. The insulating film 125A is preferably processed by anisotropic etching. The insulating film 125A can be processed using an etching gas that can be used when processing a sacrificial layer.

[0218] The sacrificial layer is preferably removed by wet etching, which can reduce damage to the EL layer 113 when the sacrificial layer is removed, compared to when the sacrificial layer is removed by dry etching, for example.

[0219] The sacrificial layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0220] After removing the sacrificial layer, a drying treatment may be performed to remove water contained in the EL layer and water adsorbed on the surface of the EL layer. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, and more preferably 70° C. or higher and 120° C. or lower. A reduced pressure atmosphere is preferred because it allows drying at a lower temperature.

[0221] Subsequently, the common layer 114 is formed on the insulating layer 125, the insulating layer 127, and the EL layer 113. Then, the common electrode 115 is formed on the common layer 114.

[0222] The common layer 114 can be formed by a method such as a vapor deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, or a coating method. As described above, the common layer 114 can have, for example, an electron injection layer or a hole injection layer.

[0223] The common electrode 115 can be formed by, for example, sputtering or vacuum deposition. Alternatively, a film formed by deposition and a film formed by sputtering may be stacked.

[0224] Thereafter, a protective layer 131 is formed on the common electrode 115 (FIG. 10C). Furthermore, by using a resin layer 122, a substrate 120 is bonded onto the protective layer 131, whereby the display device 100 shown in FIGS. 2A and 2C can be manufactured.

[0225] Examples of methods for forming the protective layer 131 include vacuum deposition, sputtering, CVD, and ALD. The protective layer 131 may have a single layer structure or a multilayer structure.

[0226] 11A and 11B are cross-sectional views illustrating an example in which the EL film 180 is formed by a wet method, specifically, an ink-jet method.

[0227] 11A shows how droplets 182a, 182b, and 182c are deposited by inkjet printing to form EL film 180a, EL film 180b, and EL film 180c, respectively. The nozzles (nozzle 181a, nozzle 181b, and nozzle 181c) of the inkjet device are positioned facing the transistor-containing layer 101, and droplets (droplets 182a, 182b, and 182c) are deposited onto the transistor-containing layer 101 from nozzles 181a, 181b, and 181c, respectively. Simultaneous deposition of droplets 182a, 182b, and 182c is preferred for high productivity. However, a curing step may be performed between the deposition of droplets 182a and 182b, for example. This may prevent the deposition of droplets deposited earlier from mixing with the deposition of droplets deposited later.

[0228] The droplets 182a, 182b, and 182c each contain one of the organic compounds used in the EL film 180. For example, when a light-emitting substance used in the EL film 180 is dropped, the droplet 182a contains an organic compound and a solvent related to a red light-emitting substance. The droplet 182b contains an organic compound and a solvent related to a green light-emitting substance. The droplet 182c contains an organic compound and a solvent related to a blue light-emitting substance. Examples of organic compounds used in the EL film 180 include hole injection materials, hole transport materials, light-emitting substances, and electron transport materials. That is, the droplets 182a, 182b, and 182c can each contain one of the hole injection materials, hole transport materials, light-emitting substances, and electron transport materials. Note that the droplets 182a, 182b, and 182c may each contain an electron injection material.

[0229] The nozzles 181a, 181b, and 181c are moved relative to the transistor-containing layer 101 to form the EL films 180a, 180b, and 180c, as shown in FIG. 11B. The EL film 180 may be dried to volatilize the solvent contained in each droplet. Heat may be applied during the drying process.

[0230] Furthermore, it is preferable to harden at least the surface of the EL film 180 through, for example, a light irradiation process, in which ultraviolet light or infrared light can be used.

[0231] 12 is a flowchart showing an example of a method for driving the display device 100. Specifically, the method shows an example of a method in which image data generated by the display device 100 or an electronic device having the display device 100 is corrected by a processing unit or the like of the display device 100 or the electronic device, and an image is displayed on the display device 100 using the corrected image data.

[0232] First, the display device 100 or an electronic device having the display device 100 generates image data for the display device 400 shown in FIG. 13 (step S1). The image data has a value representing the luminance of light emitted by each sub-pixel 110. This value is also referred to as a luminance value or a gradation value. The luminance value may be, for example, a digital value. For example, when one luminance value is represented by 8-bit digital data, the luminance value may be any value between 0 and 255. For example, the higher the luminance value, the higher the luminance of the light emitted by the sub-pixel 110. In the following description, however, it is assumed that the higher the luminance value, the higher the luminance of the light emitted by the sub-pixel 110. However, the following description can also be applied to cases where the luminance value is reversed so that the higher the luminance value, the lower the luminance of the light emitted by the sub-pixel 110.

[0233] FIG. 13 is a top view showing an example of the configuration of a display device 400. The display device 400 has rectangular pixels 403 arranged in a matrix. In the pixel 403, sub-pixels 110a, 110b, and 110c are arranged in this order in the X direction. FIG. 13 shows pixel 403[1,1], pixel 403[1,2], pixel 403[2,1], and pixel 403[2,2]. When the display device 100 has pixels 103 arranged in m rows and n columns (m and n are integers equal to or greater than 1), the display device 400 is assumed to have pixels 403 arranged in m rows and n columns.

[0234] The display device 100 shown in Fig. 1 will be compared with the display device 400 shown in Fig. 13. Specifically, the pixel 103[1,1] and the pixel 103[1,2] included in the display device 100 will be compared with the pixel 403[1,1] and the pixel 403[1,2] included in the display device 400.

[0235] In both the display device 100 and the display device 400, the subpixel in the first row and first column is the subpixel 110a. On the other hand, the subpixel in the second row and first column is the subpixel 110a in the display device 100 but is the subpixel 110b in the display device 400. Furthermore, the subpixel in the third row and first column is the subpixel 110b in the display device 100 but is the subpixel 110c in the display device 400. Furthermore, the subpixel in the fourth row and first column is the subpixel 110b in the display device 100 but is the subpixel 110a in the display device 400. Furthermore, the subpixel in the fifth row and first column is the subpixel 110c in the display device 100 but is the subpixel 110b in the display device 400. In both the display device 100 and the display device 400, the subpixel in the sixth row and first column is the subpixel 110c.

[0236] As described above, there are coordinates where the colors exhibited by the sub-pixels differ between the display device 100 and the display device 400. Therefore, it is necessary to change the coordinates of the luminance values ​​included in the image data intended for the display device 400 to match the display device 100.

[0237] For example, it is preferable that the luminance value of the first row, second column in the display device 100 is the luminance value of the first row, fourth column in the display device 400. Similarly, it is preferable that the luminance values ​​of the first row, third column, first row, fourth column, and first row, fifth column in the display device 100 are the luminance values ​​of the first row, second column, first row, fifth column, and first row, third column in the display device 400, respectively.

[0238] On the other hand, simply changing the coordinates of each brightness value may result in changes in the displayed image due to differences in pixel layout, which may cause discomfort to the user of the display device 100. For this reason, it is preferable to correct the brightness values ​​of sub-pixels whose coordinates change significantly between the display device 100 and the display device 400. This allows the display device 100 to perform, for example, anti-aliasing, making jaggies less noticeable. This allows the display device 100 to display high-quality images.

[0239] It can be said that the subpixel 110a[1,2] of the display device 100 has been moved to the first row, fourth column in the display device 400. In other words, it can be said that the subpixel 110a[1,2] has been moved by two coordinates in the X direction. Furthermore, it can be said that the subpixel 110b[1,3] has been moved to the first row, second column in the display device 400. In other words, it can be said that the subpixel 110b[1,3] has been moved by one coordinate in the −X direction. Furthermore, it can be said that the subpixel 110b[1,4] has been moved to the first row, fifth column in the display device 400. In other words, it can be said that the subpixel 110b[1,4] has been moved by one coordinate in the X direction. Furthermore, it can be said that the subpixel 110c[1,5] has been moved to the first row, third column in the display device 400. In other words, it can be said that the subpixel 110c[1,5] has been moved by two coordinates in the −X direction.

[0240] In summary, the subpixels 110a[1,1] and 110c[1,6] do not move in coordinates, the subpixels 110b[1,3] and 110b[1,4] move by one coordinate, and the subpixels 110a[1,2] and 110c[1,5] move by two coordinates. The same applies to the subpixels 110 in the second and subsequent rows.

[0241] Next, the display device 400 and the display device 100 are compared to correct the luminance of sub-pixels 110 whose coordinates are said to have shifted by a certain amount or more (step S2). Specifically, the luminance values ​​included in the image data are corrected by a processing unit or the like of the display device 100 or the electronic device. For example, the display device 400 and the display device 100 are compared to correct the luminance of sub-pixels 110 whose coordinates have shifted by two or more. Note that the luminance of sub-pixels 110 whose coordinates have shifted by one or more may also be corrected.

[0242] Note that the step of correcting the luminance of the subpixel 110 whose coordinates are said to have shifted by a certain amount or more (step S2) can be referred to as a brightness control step. That is, the method of driving a display device according to one embodiment of the present invention has a function of controlling the brightness of the subpixel, a function of controlling the color tone of the subpixel, or a function of varying the brightness of the subpixel.

[0243] In the following description, it is assumed that the luminance of a subpixel 110 whose coordinates are shifted by two or more when comparing the display device 400 and the display device 100 is corrected. That is, for example, the luminance value corresponding to the light emitted by the subpixel 110a in the first row and fourth column in the display device 400 is corrected to become the luminance value corresponding to the light emitted by the subpixel 110a[1,2] in the display device 100. Also, for example, the luminance value corresponding to the light emitted by the subpixel 110c in the first row and third column in the display device 400 is corrected to become the luminance value corresponding to the light emitted by the subpixel 110c[1,5] in the display device 100.

[0244] For example, in the display device 400, the luminance value corresponding to light emitted by the subpixel 110a in the first row and fourth column can be corrected based on the luminance value and the luminance value corresponding to light emitted by the subpixel 110a in the first row and first column. That is, based on these luminance values, a luminance value corresponding to light emitted by the subpixel 110a[1,2] in the display device 100 can be generated. Also, for example, in the display device 400, the luminance value corresponding to light emitted by the subpixel 110c in the first row and third column can be corrected based on the luminance value and the luminance value corresponding to light emitted by the subpixel 110c in the first row and sixth column. That is, based on these luminance values, a luminance value corresponding to light emitted by the subpixel 110c[1,5] in the display device 100 can be generated.

[0245] As described above, the luminance value of each sub-pixel 110 in the display device 100 can be determined based on both the luminance value of the sub-pixel 110 at the corresponding coordinates in the display device 400 and the luminance values ​​of neighboring sub-pixels 110 that emit light of the same color.

[0246] For example, the luminance value corresponding to the light emitted by the sub-pixel 110a[1,2] in the display device 100 can be expressed by the following formula (1): １ , and b １ represents a coefficient (weight). ４００［ｉ，ｊ］ (i, j are integers of 1 or more) represents the luminance value corresponding to the light emitted by the sub-pixel 110 in the i-th row and j-th column of the display device 400.

[0247]

[0248] For example, a１ +b １ is set to 1, and a １ Ha b １ It is possible to set a larger value. １ +b １ may be greater than or less than 1. １ Ha b １ In the case shown in formula (1), the subpixel 110a in the first row and fourth column of the display device 400 corresponds to the subpixel 110a[1,2] in the display device 100. The subpixel 110a adjacent to the subpixel 110a[1,2] in the display device 100 is the subpixel 110a[1,1], which corresponds to the subpixel 110a in the first row and first column of the display device 400.

[0249] Similarly, the luminance value corresponding to the light emitted by the sub-pixel 110c[1,5] in the display device 100 can be expressed by the following equation (2).

[0250]

[0251] For example, a ２ +b ２ is set to 1, and a ２ Ha b ２ It is possible to set a smaller value. ２ +b ２ may be greater than or less than 1. ２ Ha b ２ In the case shown in formula (2), the subpixel 110c in the first row and third column of the display device 400 corresponds to the subpixel 110c[1,5] in the display device 100. The subpixel 110c adjacent to the subpixel 110c[1,5] in the display device 100 is the subpixel 110c[1,6], which corresponds to the subpixel 110c in the first row and sixth column of the display device 400.

[0252] From the above, it is possible to, for example, reduce the weight of the luminance value of the subpixel 110 whose coordinate has shifted significantly in comparison between the display device 400 and the display device 100. Note that a constant may be added to equations (1) and (2).

[0253] By the above-described method, image data can be corrected to match the pixel layout of the display device of one embodiment of the present invention.

[0254] Thereafter, an image corresponding to the corrected image data is displayed on the display device 100 (step S3). Specifically, the sub-pixels 110 of the display device 100 emit light with a luminance corresponding to the luminance value included in the image data, thereby displaying an image on the display unit of the display device 100. The above is an example of a method for driving the display device 100.

[0255] In the display device 100 shown in FIG. 1, the pixels 103 have a more complex shape than a square, but by driving the display device 100 using the above driving method example, the display device 100 can display a high-quality image.

[0256] When writing image data to the subpixels 110 of the display device 100 to display an image, the display device 100 may be driven in a progressive mode, in which, for example, image data is written to the subpixels 110 in the first row, and then immediately thereafter to the subpixels 110 in the second row, and image data is written sequentially up to the subpixels 110 in the final row (the m-th row). Alternatively, the display device 100 may be driven in an interlaced mode, in which image data is written to the subpixels 110 by skipping a row. In the interlaced mode, for example, image data is written to the subpixels 110 in the first row, and then image data is written to the subpixels 110 in the third row, skipping the subpixels 110 in the second row. In this manner, image data is written sequentially up to the subpixels 110 in the (m-1)th row. Next, image data is written to the subpixels 110 in the second row, and then image data is written to the subpixels 110 in the fourth row. In this manner, image data is written sequentially up to the subpixels 110 in the m-th row. That is, for example, after image data is written to all odd-numbered row sub-pixels 110, image data is written to all even-numbered row sub-pixels 110. Note that when driving the display device 100 in an interlaced manner, the invention is not limited to the above example of writing image data to the sub-pixels 110 every other row, and image data may be written to the sub-pixels 110 every other row.

[0257] By driving the display device 100 in the progressive mode, the display device 100 can display images with less flicker. On the other hand, by driving the display device 100 in the interlaced mode, the frame frequency can be artificially increased, allowing for smooth display of moving images.

[0258] The display device 100 may be configured so that the driving mode between the progressive mode and the interlaced mode can be changed as desired by the user. By using this configuration, an image can be displayed according to the user's preference.

[0259] 1A and 1B are top views illustrating an example of the configuration of the display device 100, in which the pixels are arranged in a Bayer pattern.

[0260] 14A shows the sub-pixels 110 in the first row and first column to the sixth row and sixth column. These sub-pixels 110 form a pixel 103 in three rows and three columns. Note that FIG. 14A shows a configuration in which the pixel 103 has two sub-pixels 110b.

[0261] 14A , for example, the subpixels 110 in the second row and second column, the second row and third column, the third row and second column, and the third row and third column are subpixels 110c. Furthermore, for example, the subpixels 110 in the second row and fourth column, the second row and fifth column, the third row and fourth column, and the third row and fifth column are subpixels 110b. Furthermore, for example, the subpixels 110 in the fourth row and fourth column, the fourth row and fifth column, the fifth row and fourth column, and the fifth row and fifth column are subpixels 110a. In other words, the subpixels 110 emitting light of the same color are arranged adjacent to each other across at least two rows and two columns. Note that the subpixels 110 emitting light of the same color may be arranged adjacent to each other across three or more rows or three or more columns.

[0262] Fig. 14B is a cross-sectional view showing an example of the configuration between dashed dotted lines A3-A4 and C3-C4 in Fig. 14A. The dashed dotted lines A3-A4 include light-emitting elements 130a and 130b, and the dashed dotted lines C3-C4 include connecting portion 140. Connecting portion 140 shown in Fig. 14B has the same configuration as connecting portion 140 shown in Fig. 2C.

[0263] [Example 3 of Manufacturing Method of Display Device] Figures 15A and 15B are cross-sectional views showing an example of a method of manufacturing the display device 100 shown in Figure 14B. Figure 15A shows a method of forming the EL film 180a, and Figure 15B shows a method of forming the EL film 180b. The EL film 180a can be formed by a vapor deposition method using FMM 191a, similar to the method shown in Figure 7B. The EL film 180b can be formed by a vapor deposition method using FMM 191b, similar to the method shown in Figure 7C. Furthermore, although not shown, the EL film 180c can be formed by a vapor deposition method using FMM 191c, similar to the method shown in Figure 7D.

[0264] 15C shows a top view of the EL films 180a, 180b, and 180c when they are formed. After the EL films 180a, 180b, and 180c are formed, the EL films 180a, 180b, and 180c are processed by photolithography as shown in FIGS. 8B and 9B to form the EL layers 113a, 113b, and 113c.

[0265] [Configuration Example 3 of Display Device] FIG. 16 is a top view showing a configuration example of a display device 100, in which the pixel arrangement is an S-stripe arrangement.

[0266] 16 shows pixels 103[1,1] to 103[3,3]. The subpixels 110 in the first, fourth, and fifth columns are the subpixels 110a and 110b, and the subpixels 110 in the second, third, and sixth columns are the subpixels 110c.

[0267] As shown in FIG. 16 , for example, the subpixels 110 in the second row and fourth column, the second row and fifth column, the third row and fourth column, and the third row and fifth column are subpixels 110b. Furthermore, for example, the subpixels 110 in the fourth row and fourth column, the fourth row and fifth column, the fifth row and fourth column, and the fifth row and fifth column are subpixels 110a. That is, the subpixels 110a and the subpixels 110b are arranged adjacent to each other across at least two rows and two columns. Furthermore, as described above, the subpixels 110c in the second and third columns are subpixels 110c, and therefore the subpixels 110c are arranged adjacent to each other across at least two columns. The subpixels 110a and the subpixels 110b may each be arranged adjacent to each other across three or more rows. Furthermore, the subpixels 110a, 110b, and 110c may each be arranged adjacent to each other across three or more columns.

[0268] 17A is a cross-sectional view showing an example of the configuration between dashed dotted lines A5-A6 in FIG. 16 . FIG. 17B is a cross-sectional view showing an example of the configuration between dashed dotted lines B3-B4 in FIG. 16 . FIG. 17C is a cross-sectional view showing an example of the configuration between dashed dotted lines B5-B6 in FIG. 16 . FIG. 17D is a cross-sectional view showing an example of the configuration between dashed dotted lines C5-C6 in FIG. 16 . Light-emitting elements 130a and 130c are included between dashed dotted lines A5-A6, light-emitting elements 130a and 130b are included between dashed dotted lines B3-B4, and light-emitting element 130c is included between dashed dotted lines B5-B6. Furthermore, the connection portion 140 shown in FIG. 17D has the same configuration as the connection portion 140 shown in FIG. 2C .

[0269] The EL film 180a that will become the EL layer 113a can be formed by a vapor deposition method using FMM 191a, similar to the method shown in FIG. 7B. The EL film 180b that will become the EL layer 113b can be formed by a vapor deposition method using FMM 191b, similar to the method shown in FIG. 7C. The EL film 180c that will become the EL layer 113c can be formed by a wet method, such as an inkjet method, similar to the method shown in FIGS. 11A and 11B. Note that the EL film 180c may also be formed by a vapor deposition method using FMM 191c, similar to the method shown in FIG. 7D.

[0270] 18 shows a top view of the EL films 180a, 180b, and 180c when they are formed. After the EL films 180a, 180b, and 180c are formed, the EL films 180a, 180b, and 180c are processed by photolithography as shown in FIGS. 8B and 9B, thereby forming the EL layers 113a, 113b, and 113c.

[0271] [Configuration Example 4 of Display Device] Fig. 19A is a modified example of the display device 100 shown in Fig. 14A , and shows a configuration in which the pixel 103 has the sub-pixel 110d in addition to the sub-pixels 110a, 110b, and 110c. Note that Fig. 19A shows a configuration in which the pixel 103 has one each of the sub-pixels 110a, 110b, 110c, and 110d.

[0272] The subpixel 110d includes a light-receiving element (also referred to as a light-receiving device). Therefore, by providing the subpixel 110d in the display unit of the display device 100, the display device 100 can have one or both of an imaging function and a sensing function in addition to an image display function. The display unit of such a display device 100 can be used as an image sensor or a touch sensor. That is, by detecting light in the display unit, it is possible to capture an image or detect the proximity or contact of an object (such as a finger, hand, or pen). Furthermore, the display device 100 configured as shown in FIG. 19A can use the light-emitting element 130 as a light source for the sensor. Therefore, a light-receiving unit and a light source separate from the display device 100 are not required, thereby reducing the number of components in an electronic device including the display device 100. For example, there is no need to provide a fingerprint authentication device or a capacitive touch panel for scrolling or the like separately from the electronic device. Therefore, by using the display device 100 configured as shown in FIG. 19A, it is possible to provide an electronic device with reduced manufacturing costs compared to, for example, a case in which a touch panel is provided separately from the display device 100.

[0273] In the display device 100 having the configuration shown in FIG. 19A, when the light emitted by the light-emitting element 130 is reflected (or scattered) by an object, the light-receiving element can detect the reflected light (or scattered light), making it possible to capture images or detect touches even in dark places.

[0274] When the light receiving element is used as an image sensor, the light receiving element can be used to capture an image in the display device 100. For example, the display device 100 having the configuration shown in Fig. 19A can be used as a scanner.

[0275] For example, an image sensor can be used to acquire data related to biometric information such as a fingerprint or palm print. That is, a biometric authentication sensor can be built into the display device 100. By building a biometric authentication sensor into the display device 100, the number of components in an electronic device that includes the display device 100 can be reduced compared to when a biometric authentication sensor is provided separately from the display device 100, and the electronic device can be made smaller and lighter.

[0276] Furthermore, when the light receiving element is used as a touch sensor, the display device 100 having the configuration shown in FIG. 19A can detect the proximity or contact of an object using the light receiving element.

[0277] 19A , for example, the subpixels 110 in the second row and second column, the second row and third column, the third row and second column, and the third row and third column are subpixels 110c. Furthermore, for example, the subpixels 110 in the second row and fourth column, the second row and fifth column, the third row and fourth column, and the third row and fifth column are subpixels 110d. Furthermore, for example, the subpixels 110 in the fourth row and second column, the fourth row and third column, the fifth row and second column, and the fifth row and third column are subpixels 110b. Furthermore, for example, the subpixels 110 in the fourth row and fourth column, the fourth row and fifth column, the fifth row and fourth column, and the fifth row and fifth column are subpixels 110a. That is, the subpixels 110a, 110b, 110c, and 110d are arranged adjacent to each other across at least two rows and two columns. The sub-pixels 110a, 110b, 110c, and 110d may each be arranged adjacent to each other across three or more rows, or may each be arranged adjacent to each other across three or more columns.

[0278] Fig. 19B is a cross-sectional view showing an example of the configuration between dashed dotted lines A7-A8 and C7-C8 in Fig. 19A. The dashed dotted lines A7-A8 include the light-emitting element 130c and the light-receiving element 150, and the dashed dotted lines C7-C8 include the connection portion 140. The connection portion 140 shown in Fig. 19B has the same configuration as the connection portion 140 shown in Fig. 2C.

[0279] The light-receiving element 150 includes a pixel electrode 111 on the transistor-containing layer 101, an island-shaped PD layer 155 on the pixel electrode 111, a common layer 114 on the PD layer 155, and a common electrode 115 on the common layer 114. The PD layer 155 includes at least an active layer. The active layer is also referred to as a light-receiving layer. The PD layer 155 may include one or more of a hole transport layer, a hole blocking layer, an electron blocking layer, and an electron transport layer. For example, the PD layer 155 may be configured with a hole transport layer, an active layer, and an electron transport layer stacked in this order. In this case, the pixel electrode 111 can function as an anode, and the common electrode 115 can function as a cathode. The PD layer 155 may be configured with an electron transport layer, an active layer, and a hole transport layer stacked in this order. In this case, the pixel electrode 111 can function as a cathode, and the common electrode 115 can function as an anode.

[0280] Here, the function of the common layer 114 in the light-emitting element 130 may differ from that in the light-receiving element 150. In this specification and the like, components may be named based on their function in the light-emitting element. For example, a hole injection layer functions as a hole injection layer in the light-emitting element and as a hole transport layer in the light-receiving element. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting element and as an electron transport layer in the light-receiving element. Furthermore, a layer shared by the light-receiving element and the light-emitting element may have the same function in the light-emitting element and in the light-receiving element. For example, a hole transport layer functions as a hole transport layer in both the light-emitting element and the light-receiving element, and an electron transport layer functions as an electron transport layer in both the light-emitting element and the light-receiving element.

[0281] The active layer of the PD layer 155 includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (e.g., vacuum deposition), allowing the use of a common manufacturing device.

[0282] The n-type semiconductor material of the active layer is fullerene (e.g., C ６０ , or C ７０ Examples of suitable electron-accepting organic semiconductor materials include fullerene derivatives and other electron-accepting organic semiconductor materials. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads across a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving elements. C ６０ , and C ７０ Both have a wide absorption band in the visible light region, and C ７０ is C ６０

[0023] Other fullerene derivatives include [6,6]-phenyl-C71-butyric acid methyl ester (abbreviation: PC71BM), [6,6]-phenyl-C61-butyric acid methyl ester (abbreviation: PC61BM), and 1',1",4',4"-tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2",3"][5,6]fullerene-C60 (abbreviation: ICBA).

[0283] Furthermore, examples of materials for n-type semiconductors include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0284] An example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0285] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0286] Examples of p-type semiconductor materials contained in the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0287] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, and tetracene derivatives.

[0288] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0289] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0290] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0291] The active layer may also contain a mixture of three or more materials. For example, in order to expand the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0292] The hole transport layer, the hole blocking layer, the electron blocking layer, the electron transport layer, and the like that can be provided in the PD layer 155 can have the same materials as the hole transport layer, the hole blocking layer, the electron blocking layer, the electron transport layer, and the like that can be provided in the EL layer 113.

[0293] The PD layer 155 can be formed by the same method as the EL layer 113. For example, the PD layer 155 can be formed by depositing a film that will become the PD layer 155 and processing the film using photolithography. The film that will become the PD layer 155 can be deposited by, for example, a vapor deposition method using a metal mask. Alternatively, the film that will become the PD layer 155 can be deposited by a wet method such as an inkjet method.

[0294] [Configuration Example 5 of Display Device] Fig. 20 is a top view showing a configuration example of the display device 100. The display device 100 shown in Fig. 20 has a sub-pixel 110d that can receive light, and the pixel arrangement is an S-stripe arrangement. Fig. 20 shows pixels 103[1,1] to 103[4,4].

[0295] As shown in Figure 20, for example, the subpixels 110 located in the fourth row, second column to the seventh row, third column are subpixels 110a. The subpixels 110 located in the fourth row, fourth column, fourth row, fifth row, fifth row, fourth column, and fifth row, fifth row, and fifth row are subpixels 110b. The subpixels 110 located in the fourth row, sixth column to seventh row, seventh column are subpixels 110c. The subpixels 110 located in the sixth row, fourth column, sixth row, fifth row, seventh row, fourth column, and seventh row, fifth column are subpixels 110d. That is, the subpixels 110a and 110c are arranged adjacent to each other across four rows and two columns, for example. The subpixels 110b and 110d are arranged adjacent to each other across two rows and two columns, for example. The subpixels 110a and 110c may be arranged adjacent to each other across five or more rows, and the subpixels 110b and 110d may be arranged adjacent to each other across two or more rows.Furthermore, the subpixels 110a, 110b, 110c, and 110d may be arranged adjacent to each other across three or more columns.

[0296] Fig. 21 is a top view showing an example of the configuration of a display device 100, which is a modification of the display device 100 shown in Fig. 20. The display device 100 shown in Fig. 20 is provided with pixels 103 each having three subpixels 110 and pixels 103 each having four subpixels 110. On the other hand, in the display device 100 shown in Fig. 21, all of the pixels 103 each have three subpixels 110.

[0297] This embodiment mode can be combined with other embodiment modes as appropriate.

[0298] Embodiment 2 In this embodiment, a display device according to one embodiment of the present invention will be described with reference to drawings.

[0299] The display device of one embodiment of the present invention can be a high-resolution display device. Therefore, the display device of this embodiment can be used for, for example, a display portion of a wristwatch-type or bracelet-type information terminal (wearable device), a VR device such as a head-mounted display, or a head-mountable wearable device such as a glasses-type AR device.

[0300] The display device of one embodiment of the present invention can be a high-resolution display device or a large-sized display device. Therefore, the display device of this embodiment can be used for display portions of electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproduction devices.

[0301] 22A shows a perspective view of a display module 280. The display module 280 includes the display device 100 and an FPC 290.

[0302] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0303] 22B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0304] The pixel portion 284 has a plurality of periodically arranged pixels 284a. The pixels 284a have the light-emitting element described in Embodiment 1. Note that the pixels 284a may have the light-receiving element described in Embodiment 1.

[0305] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0306] Each pixel circuit 283a controls the driving of multiple elements included in each pixel 284a. For example, the pixel circuit 283a may be configured to include at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting element. In this case, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source. This realizes an active matrix display device.

[0307] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0308] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0309] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a be arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0310] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even if the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0311] The display device 100 shown in FIG. 23A includes a substrate 301 , a light-emitting element 130 , a capacitor 240 , and a transistor 310 .

[0312] 22A and 22B. The stacked structure from the substrate 301 to the insulating layer 255b corresponds to the layer 101 including the transistor in Embodiment 1.

[0313] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0314] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0315] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0316] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0317] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0318] An insulating layer 255a is provided to cover the capacitor 240, and an insulating layer 255b is provided on the insulating layer 255a.

[0319] The insulating layer 255a and the insulating layer 255b can be formed using various inorganic insulating films such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. The insulating layer 255a is preferably formed using an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layer 255a is preferably formed using a silicon oxide film, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film. Alternatively, the insulating layer 255a may be formed using a nitride insulating film or a nitride oxide insulating film, and the insulating layer 255b may be formed using an oxide insulating film or an oxynitride insulating film. Although this embodiment shows an example in which a recess is provided in the insulating layer 255b, the insulating layer 255b does not necessarily have a recess.

[0320] The light-emitting element 130 is provided on the insulating layer 255b. The light-emitting element 130 can have the structure shown in FIG. 2A, for example. For details of the light-emitting element 130, refer to Embodiment 1. In the region between adjacent light-emitting elements 130, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided.

[0321] The pixel electrode 111 of the light-emitting element 130 is electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layers 243, 255a, and 255b, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. For example, the pixel electrode 111 has a region in contact with the plug 256. For example, the lower surface of the pixel electrode 111 has a region in contact with the upper surface of the plug 256. The height of the upper surface of the insulating layer 255b and the height of the upper surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0322] Moreover, a protective layer 131 is provided on the light emitting element 130. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light emitting element 130 to the substrate 120, refer to Embodiment 1. The substrate 120 corresponds to the substrate 292 in FIG. 22A .

[0323] 23B1 and 23B2 are cross-sectional views showing an example of the configuration of layers above the insulating layer 255a shown in Fig. 23A, which are modified examples of the configuration shown in Fig. 23A. In Fig. 23B1 and 23B2, a microlens array 124 is provided between the protective layer 131 and the substrate 120.

[0324] The microlens array 124 may have, for example, a plano-convex shape. In the example shown in Fig. 23B1, the microlens array 124 has an upward convex shape, and the microlens array 124 and the substrate 120 are bonded together by a resin layer 122. In the example shown in Fig. 23B2, the microlens array 124 has a downward convex shape, and the microlens array 124 and the protective layer 131 are bonded together by a resin layer 122.

[0325] When the refractive index of the resin layer 122 is lower than the refractive index of the microlenses included in the microlens array 124, the microlenses may be able to focus the light emitted by the EL layer 113. Focusing the light emitted by the EL layer 113 allows a bright image to be viewed, particularly when a user of the display device 100 views the display surface of the display device 100 from directly in front of the display surface. Therefore, for example, when the display device 100 is used in an AR device or a VR device, it is preferable to provide the display device 100 with a microlens array 124, as shown in FIG. 23B1 or FIG. 23B2 .

[0326] 24 has a configuration in which a transistor 310A and a transistor 310B, each having a channel formed in a semiconductor substrate, are stacked. Note that in the following description of the display device, descriptions of parts that are the same as those of the display device described above may be omitted.

[0327] The display device 100 has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting element 130 are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0328] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an inorganic insulating film that can be used for the protective layer 131.

[0329] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 to cover the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be an inorganic insulating film that can be used for the protective layer 131.

[0330] Furthermore, a conductive layer 342 is provided on the back surface of the substrate 301B (the surface on the substrate 301A side) under the insulating layer 345. The conductive layer 342 is preferably provided so as to be embedded in the insulating layer 335. Furthermore, the lower surfaces of the conductive layer 342 and the insulating layer 335 are preferably flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0331] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. In addition, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0332] The substrate 301A and the substrate 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be favorably bonded to each other.

[0333] It is preferable to use the same conductive material for the conductive layers 341 and 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. This allows the use of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0334] The display device 100 shown in FIG. 25 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347 .

[0335] 25 , by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), or tin (Sn). Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0336] The display device 100 shown in FIG. 26 differs from the display device 100 shown in FIG. 23A in the configuration of the transistors.

[0337] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0338] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used as the transistor 320. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor including low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0339] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0340] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current in an off state (hereinafter also referred to as off-state current), and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0341] The off-state current of the OS transistor per 1 μm of channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１ A) or less, or 1yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0342] Furthermore, to increase the emission luminance of a light-emitting element included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting element. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting element and increase the emission luminance of the light-emitting element.

[0343] Furthermore, when a transistor operates in a saturation region, an OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing to a light-emitting element. This allows for a larger gradation level in the pixel circuit.

[0344] Furthermore, in terms of saturation characteristics of the current that flows when a transistor operates in a saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed to a light-emitting element, even when the current-voltage characteristics of the light-emitting element vary. In other words, when an OS transistor operates in a saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting element.

[0345] By using an OS transistor as a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gray levels," "suppression of variations in light-emitting elements," and the like.

[0346] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0347] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0348] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include a composition in which In:M:Zn = 1:1:1 or thereabouts, a composition in which In:M:Zn = 1:1:1.2 or thereabouts, a composition in which In:M:Zn = 2:1:3 or thereabouts, a composition in which In:M:Zn = 3:1:2 or thereabouts, a composition in which In:M:Zn = 4:2:3 or thereabouts, a composition in which In:M:Zn = 4:2:4.1 or thereabouts, a composition in which In:M:Zn = 5:1:3 or thereabouts, a composition in which In:M:Zn = 5:1:6 or thereabouts, a composition in which In:M:Zn = 5:1:7 or thereabouts, a composition in which In:M:Zn = 5:1:8 or thereabouts, a composition in which In:M:Zn = 6:1:6 or thereabouts, and a composition in which In:M:Zn = 5:2:5 or thereabouts. The term "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0349] For example, when describing a composition having an atomic ratio of In:Ga:Zn = 4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less.

[0350] 22B may have the same structure as the transistors included in the pixel circuit portion 283, or may have different structures. The transistors included in the circuit portion 282 may all have the same structure, or may have two or more types. Similarly, the transistors included in the pixel circuit portion 283 may all have the same structure, or may have two or more types.

[0351] All of the transistors included in the pixel circuit portion 283 may be OS transistors, all of the transistors included in the pixel circuit portion 283 may be Si transistors, or some of the transistors included in the pixel circuit portion 283 may be OS transistors and the rest may be Si transistors.

[0352] For example, by using both an LTPS transistor and an OS transistor in the pixel circuit portion 283, a display device with low power consumption and high driving capability can be realized. A configuration in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. As a more preferred example, an OS transistor is preferably used as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and an LTPS transistor is preferably used as a transistor for controlling current.

[0353] For example, one of the transistors included in the pixel circuit portion 283 functions as a transistor for controlling a current flowing to a light-emitting element and can be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting element. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing to the light-emitting element in the pixel circuit to be increased.

[0354] On the other hand, another transistor included in the pixel circuit portion 283 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a signal line. It is preferable to use an OS transistor as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), and therefore power consumption can be reduced by stopping the driver when displaying a still image.

[0355] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0356] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0357] 22A and 22B . The stacked structure from the substrate 331 to the insulating layer 255b corresponds to the layer 101 including the transistor in Embodiment 1. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0358] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0359] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0360] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide film having semiconductor properties. A pair of conductive layers 325 is provided over and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0361] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like to the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0362] Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and the insulating layer 264. Inside the openings, an insulating layer 323 and a conductive layer 324 are buried, which are in contact with side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and an upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0363] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0364] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0365] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0366] The display device 100 illustrated in FIG. 27 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0367] The transistor 320A, the transistor 320B, and the surrounding configuration can be referenced to the display device 100 shown in FIG.

[0368] Although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0369] The display device 100 shown in FIG. 28 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide.

[0370] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0371] The transistor 320 can be used as a transistor that forms a pixel circuit. The transistor 310 can be used as a transistor that forms a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that form various circuits such as an arithmetic circuit or a memory circuit.

[0372] By using this configuration, not only the pixel circuit but also, for example, a driver circuit can be formed directly under the light-emitting element, which makes it possible to reduce the size of the display device compared to when the driver circuit is provided around the periphery of the display area.

[0373] [Configuration Example 2 of Display Module] FIG. 29 shows a perspective view of the display device 100, and FIG. 30A shows a cross-sectional view of the display device 100.

[0374] The display device 100 has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 29, the substrate 152 is clearly indicated by a dashed line.

[0375] The display device 100 includes a display portion 162, a connection portion 140, a circuit portion 164, wiring 165, and the like. Fig. 29 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100. Therefore, the configuration shown in Fig. 29 can also be said to be a display module including the display device 100, an IC (integrated circuit), and an FPC.

[0376] The connection portion 140 is provided outside the display portion 162. The connection portion 140 can be provided along one side or multiple sides of the display portion 162. The number of connection portions 140 may be single or multiple. FIG. 29 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting element and the conductive layer, and can supply a potential to the common electrode.

[0377] The circuit portion 164 can be, for example, a scanning line driver circuit.

[0378] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit portion 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0379] 29 shows an example in which an IC 173 is provided on a substrate 151 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. The IC 173 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100 and the display module may not necessarily include an IC. Alternatively, the IC may be mounted on an FPC by a COF method, for example.

[0380] Figure 30A shows an example of a cross section of the display device 100 when a portion of the area including the FPC 172, a portion of the circuit section 164, a portion of the display section 162, a portion of the connection section 140, and a portion of the area including the end portion are cut away.

[0381] The display device 100 shown in FIG. 30A includes a transistor 201, a transistor 205, a light-emitting element 130, and the like between a substrate 151 and a substrate 152.

[0382] 2A except that the configuration of the pixel electrode is different. For details of the light-emitting element 130, refer to Embodiment 1. In the region between adjacent light-emitting elements 130, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided.

[0383] The light-emitting element 130 includes a conductive layer 112, a conductive layer 126 over the conductive layer 112, a conductive layer 129 over the conductive layer 126, and an EL layer 113 over the conductive layer 129. Here, all of the conductive layer 112, the conductive layer 126, and the conductive layer 129 can be called pixel electrodes, or some of them can be called pixel electrodes.

[0384] The conductive layer 112 is connected to a conductive layer 222b included in the transistor 205 through openings provided in the insulating layers 214, 215, and 213. An end of the conductive layer 126 is located outside an end of the conductive layer 112. An end of the conductive layer 126 and an end of the conductive layer 129 are aligned or approximately aligned. For example, a conductive layer functioning as a reflective electrode can be used for the conductive layer 112 and the conductive layer 126, and a conductive layer functioning as a transparent electrode can be used for the conductive layer 129.

[0385] A recess is formed in the conductive layer 112 so as to cover the openings provided in the insulating layer 214, the insulating layer 215, and the insulating layer 213. A layer 128 is buried in the recess.

[0386] The layer 128 has a function of planarizing the recessed portion of the conductive layer 112. A conductive layer 126 electrically connected to the conductive layer 112 is provided over the conductive layer 112 and the layer 128. Therefore, a region overlapping with the recessed portion of the conductive layer 112 can also be used as a light-emitting region, and the aperture ratio of the pixel can be increased.

[0387] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material.

[0388] An insulating layer containing an organic material can be suitably used as the layer 128. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenolic resin, precursors of these resins, or the like can be used as the layer 128. Alternatively, a photosensitive resin can be used as the layer 128. The photosensitive resin can be a positive-type material or a negative-type material.

[0389] By using a photosensitive resin, the layer 128 can be formed only through exposure and development steps, and the influence of dry etching, wet etching, or the like on the surface of the conductive layer 112 can be reduced. Furthermore, by forming the layer 128 using a negative photosensitive resin, the layer 128 can sometimes be formed using the same photomask (exposure mask) as that used to form the openings in the insulating layer 214.

[0390] A protective layer 131 is provided on the light-emitting element 130. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting element 130. In FIG. 30A , the space between the substrate 152 and the protective layer 131 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting element 130. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0391] In the connection portion 140, a connection electrode 123 is provided on the insulating layer 214. The connection electrode 123 has an example of a laminated structure including a conductive layer obtained by processing the same conductive film as the conductive layer 112, a conductive layer obtained by processing the same conductive film as the conductive layer 126, and a conductive layer obtained by processing the same conductive film as the conductive layer 129. An end of the connection electrode 123 is covered with an insulating layer 121. A common layer 114 is provided on the connection electrode 123, and a common electrode 115 is provided on the common layer 114. The connection electrode 123 and the common electrode 115 are electrically connected via the common layer 114. The common layer 114 does not necessarily have to be formed in the connection portion 140. In this case, the connection electrode 123 and the common electrode 115 are in direct contact with each other and are electrically connected.

[0392] The display device 100 is a top-emission type. Light L emitted by the light-emitting element 130 is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.

[0393] The stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 1.

[0394] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0395] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0396] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0397] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0398] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. The insulating layer 214 may also have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This can prevent recesses from being formed in the insulating layer 214 during processing of the conductive layer 112, the conductive layer 126, the conductive layer 129, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 112, the conductive layer 126, the conductive layer 129, or the like.

[0399] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0400] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0401] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0402] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0403] A semiconductor layer of the transistor preferably contains a metal oxide. That is, the display device of this embodiment preferably uses a transistor in which a channel formation region is formed using a metal oxide (hereinafter referred to as an OS transistor).

[0404] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0405] 30B and 30C show other examples of transistor configurations.

[0406] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0407] 30B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0408] 30C , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, thereby manufacturing the structure shown in FIG. 30C . In FIG. 30C , the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215.

[0409] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layer 112, a conductive film obtained by processing the same conductive film as the conductive layer 126, and a conductive film obtained by processing the same conductive film as the conductive layer 129. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0410] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting elements 130, in the connection section 140, in the circuit section 164, etc. Various optical members can be disposed on the outside of the substrate 152.

[0411] By providing the protective layer 131 that covers the light emitting element 130, impurities such as water can be prevented from entering the light emitting element 130, and the reliability of the light emitting element 130 can be improved.

[0412] The materials that can be used for the substrate 120 can be used for the substrate 151 and the substrate 152 .

[0413] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0414] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0415] The display device 100 shown in FIG. 31A differs from the display device 100 shown in FIG. 30A mainly in that it is a bottom-emission type display device.

[0416] Light emitted from the light emitting element 130 is emitted toward the substrate 151. A material that is highly transparent to visible light is preferably used for the substrate 151. On the other hand, the light-transmitting property of the material used for the substrate 152 does not matter.

[0417] A light-shielding layer 117 is preferably formed between the substrate 151 and the transistor 201 and between the substrate 151 and the transistor 205. Fig. 31A illustrates an example in which the light-shielding layer 117 is provided over the substrate 151, the insulating layer 153 is provided over the light-shielding layer 117, and the transistor 201, the transistor 205, and the like are provided over the insulating layer 153.

[0418] A material that is highly transparent to visible light is used for the conductive layer 112, the conductive layer 126, and the conductive layer 129. A material that reflects visible light is preferably used for the common electrode 115.

[0419] 30A and 31A, the top surface of the layer 128 and the top surface of the conductive layer 112 are approximately flush with each other, but this is not a limitation of one embodiment of the present invention. Figures 31B1 to 31B4 are enlarged views of a region including the layer 128 and its periphery, and are modified examples of the configurations shown in Figures 30A and 31A.

[0420] Fig. 31B1 shows an example in which the upper surface of layer 128 is higher than the upper surface of conductive layer 112. In the example shown in Fig. 31B1, the upper surface of layer 128 has a gently bulging shape that is convex toward the center.

[0421] Figure 31B2 shows an example in which the top surface of layer 128 is lower than the top surface of conductive layer 112. In the example shown in Figure 31B2, the top surface of layer 128 has a gently sloping shape that is concave toward the center.

[0422] 31B3 shows an example in which the upper surface of layer 128 is higher than the upper surface of conductive layer 112, and the upper portion of layer 128 is formed so as to extend beyond a recess formed in conductive layer 112. In the example shown in FIG.

[0423] Fig. 31B4 shows an example in which a recess is further formed in part of the upper surface of layer 128 in addition to the example shown in Fig. 31B3. The recess has a shape that is gently recessed toward the center.

[0424] This embodiment mode can be combined with other embodiment modes as appropriate.

[0425] Embodiment 3 In this embodiment, a light-emitting element that can be used for a display device of one embodiment of the present invention will be described.

[0426] As shown in FIG. 32A , the light-emitting element has an EL layer 786 between a pair of electrodes (a lower electrode 772 and an upper electrode 788). The EL layer 786 can be composed of a plurality of layers, such as a layer 4420, a light-emitting layer 4411, and a layer 4430. The layer 4420 can have, for example, a layer containing a substance with high electron-injection properties (electron-injection layer) and a layer containing a substance with high electron-transport properties (electron-transport layer). The light-emitting layer 4411 contains, for example, a light-emitting compound. The layer 4430 can have, for example, a layer containing a substance with high hole-injection properties (hole-injection layer) and a layer containing a substance with high hole-transport properties (hole-transport layer).

[0427] A structure including the layer 4420, the light-emitting layer 4411, and the layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 32A is referred to as a single structure in this specification.

[0428] 32B shows a modified example of the EL layer 786 included in the light-emitting element shown in Fig. 32A. Specifically, the light-emitting element shown in Fig. 32B includes a layer 4431 over a lower electrode 772, a layer 4432 over the layer 4431, a light-emitting layer 4411 over the layer 4432, a layer 4421 over the light-emitting layer 4411, a layer 4422 over the layer 4421, and an upper electrode 788 over the layer 4422. For example, when the lower electrode 772 serves as an anode and the upper electrode 788 serves as a cathode, the layer 4431 functions as a hole-injection layer, the layer 4432 functions as a hole-transport layer, the layer 4421 functions as an electron-transport layer, and the layer 4422 functions as an electron-injection layer. Alternatively, when the lower electrode 772 is a cathode and the upper electrode 788 is an anode, the layer 4431 functions as an electron injection layer, the layer 4432 functions as an electron transport layer, the layer 4421 functions as a hole transport layer, and the layer 4422 functions as a hole injection layer. With such a layer structure, carriers can be efficiently injected into the light-emitting layer 4411, and the efficiency of carrier recombination in the light-emitting layer 4411 can be increased.

[0429] Note that a structure in which a plurality of light-emitting layers (light-emitting layer 4411, light-emitting layer 4412, and light-emitting layer 4413) are provided between the layer 4420 and the layer 4430 as shown in FIGS. 32C and 32D is also a variation of the single structure.

[0430] 32E and 32F, a configuration in which a plurality of light-emitting units (EL layers 786a and 786b) are connected in series via a charge generation layer 4440 is referred to as a tandem structure in this specification. The tandem structure may also be referred to as a stack structure. The tandem structure makes it possible to provide a light-emitting element that can emit light with high brightness.

[0431] 32C and 32D, light-emitting materials that emit light of the same color, or even the same light-emitting material, may be used for the light-emitting layers 4411, 4412, and 4413. For example, a light-emitting material that emits blue light may be used for the light-emitting layers 4411, 4412, and 4413. A color conversion layer may be provided as the layer 785 shown in FIG.

[0432] Furthermore, light-emitting materials that emit light of different colors may be used for the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413. When the lights emitted by the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413 are complementary in color, white light can be obtained. A color filter (also referred to as a colored layer) may be provided as the layer 785 shown in Figure 32D. When white light passes through the color filter, light of a desired color can be obtained.

[0433] 32E and 32F , the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. Alternatively, the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of different colors. When the light emitted by the light-emitting layer 4411 and the light emitted by the light-emitting layer 4412 are complementary colors, white light emission is obtained. FIG. 32F shows an example in which a layer 785 is further provided. As the layer 785, one or both of a color conversion layer and a color filter (colored layer) can be used.

[0434] 32C, 32D, 32E, and 32F, the layer 4420 and the layer 4430 may have a laminated structure consisting of two or more layers, as shown in FIG. 32B.

[0435] A structure in which each light-emitting element produces a different emission color (for example, blue (B), green (G), and red (R)) is sometimes called an SBS (Side By Side) structure.

[0436] The light-emitting color of the light-emitting element can be red, green, blue, cyan, magenta, yellow, white, or the like, depending on the material forming the EL layer 786. Furthermore, the color purity can be further improved by providing the light-emitting element with a microcavity structure.

[0437] A light-emitting element that emits white light preferably has a structure in which two or more types of light-emitting materials are contained in the light-emitting layer. To obtain white light emission, light-emitting materials may be selected such that the respective emissions of the two or more light-emitting materials have a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a light-emitting element that emits white light as a whole can be obtained. The same applies to a light-emitting element having three or more light-emitting layers.

[0438] The light-emitting layer preferably contains two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), or the like.

[0439] This embodiment mode can be combined with other embodiment modes as appropriate.

[0440] Embodiment 4 In this embodiment, an electronic device of one embodiment of the present invention will be described with reference to drawings.

[0441] The display device of one embodiment of the present invention can be a substantially high-resolution display device, and therefore can be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices (e.g., head-mounted displays), AR glasses-type devices, and MR devices.

[0442] Furthermore, the display device of one embodiment of the present invention can display high-resolution images. Therefore, the display device of one embodiment of the present invention can be suitably used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines. The display device of one embodiment of the present invention can also be used in electronic devices such as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound players.

[0443] The display device of one embodiment of the present invention preferably has an extremely high resolution, such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use, such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0444] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0445] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, and a function to read out programs or data recorded on a recording medium.

[0446] 33A to 33D and 34A to 34F , examples of wearable devices that can be worn on the head will be described. These wearable devices have one or both of a function to display AR content and a function to display VR content. Note that these wearable devices may also have a function to display SR or MR content in addition to AR and VR. Having an electronic device with a function to display AR, VR, SR, MR, or other content can enhance the user's sense of immersion.

[0447] The electronic device 700A shown in Figure 33A and the electronic device 700B shown in Figure 33B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0448] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can provide a display that appears to have extremely high definition.

[0449] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

[0450] The electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, the electronic device 700A and the electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in the display area 756.

[0451] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0452] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0453] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation, a slide operation, or the like by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can broaden the range of operations.

[0454] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0455] The electronic device 800A shown in Figure 33C and the electronic device 800B shown in Figure 33D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0456] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, an electronic device capable of displaying images with extremely high definition can be provided, which allows a user to feel a high sense of immersion.

[0457] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0458] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0459] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0460] The mounting unit 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head. Note that, for example, in Fig. 33C, the mounting unit 823 is shaped like the temples of glasses (also called joints or temples), but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0461] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0462] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0463] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0464] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0465] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 includes a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, an electronic device 700A shown in FIG. 33A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, an electronic device 800A shown in FIG. 33C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0466] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 33B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0467] Similarly, electronic device 800B shown in Fig. 33D has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. Furthermore, earphone unit 827 and wearing unit 823 may have magnets. This allows earphone unit 827 to be fixed to wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0468] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0469] As described above, as electronic devices according to one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0470] Furthermore, the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.

[0471] 34A and 34B show the appearance of an electronic device 8300 that is a head-mounted display.

[0472] The electronic device 8300 includes a housing 8301 , a display portion 8302 , operation buttons 8303 , and a band-shaped fixture 8304 .

[0473] The operation button 8303 has a function of, for example, a power button. The electronic device 8300 may have a button in addition to the operation button 8303.

[0474] 34C , a lens 8305 may be provided between the display portion 8302 and the user's eyes. The lens 8305 allows the user to view an enlarged image of the display portion 8302, enhancing the sense of realism. In this case, as shown in FIG. 34C , a dial 8306 may be provided to change the position of the lens for adjusting the diopter.

[0475] The display device of one embodiment of the present invention can be applied to the display portion 8302. Thus, the electronic device 8300 can be an electronic device capable of displaying images that appear to have extremely high definition. Therefore, even when an image is enlarged using the lens 8305 as shown in FIG. 34C , pixels are not visible to the user, and more realistic images can be displayed.

[0476] 34A to 34C show an example in which one display unit 8302 is included. With such a configuration, the number of parts can be reduced.

[0477] The display portion 8302 can display two images, an image for the right eye and an image for the left eye, side by side in two regions, left and right, respectively, thereby displaying a stereoscopic image using binocular parallax.

[0478] Alternatively, a single image that can be viewed by both eyes may be displayed across the entire area of ​​the display unit 8302. This allows a panoramic image to be displayed across both ends of the field of view, thereby enhancing the sense of reality.

[0479] Here, the display portion 8302 of the electronic device 8300 preferably has a mechanism for changing the curvature of the display portion 8302 to an appropriate value depending on the size of the user's head, the position of the user's eyes, or the like. For example, the user may adjust the curvature of the display portion 8302 by operating a dial 8307 for adjusting the curvature of the display portion 8302. Alternatively, the electronic device 8300 may have a mechanism for adjusting the curvature of the display portion 8302 based on detection data of a sensor (for example, a camera, a contact sensor, a non-contact sensor, or the like) provided in the housing 8301 to detect the size of the user's head, the position of the user's eyes, or the like.

[0480] In addition, when the lens 8305 is used, it is preferable to provide a mechanism for adjusting the position and angle of the lens 8305 in synchronization with the curvature of the display portion 8302. Alternatively, the dial 8306 may have a function for adjusting the angle of the lens.

[0481] 34E and 34F show an example including a driver 8308 that controls the curvature of the display portion 8302. The driver 8308 is fixed to at least a part of the display portion 8302. The driver 8308 has a function of deforming the display portion 8302 by deforming or moving a part fixed to the display portion 8302.

[0482] 34E is a schematic diagram showing a case where a user 8310 with a relatively large head size is wearing the housing 8301. In this case, the shape of the display portion 8302 is adjusted by the driving unit 8308 so that the curvature is relatively small (the radius of curvature is large).

[0483] On the other hand, Figure 34F shows a case where a user 8311, whose head is smaller than that of the user 8310, is wearing the housing 8301. The user 8311 has a smaller distance between their eyes than the user 8310. In this case, the shape of the display unit 8302 is adjusted by the drive unit 8308 so that the curvature of the display unit 8302 is larger (the radius of curvature is smaller). In Figure 34F, the position and shape of the display unit 8302 in Figure 34E are indicated by dashed lines.

[0484] In this manner, the electronic device 8300 has a mechanism for adjusting the curvature of the display portion 8302, and can provide an optimal display to various users, regardless of age or gender.

[0485] Furthermore, by changing the curvature of the display portion 8302 in accordance with the content displayed on the display portion 8302, a high sense of realism can be given to the user. For example, shaking can be expressed by vibrating the curvature of the display portion 8302. In this way, various effects can be produced according to the scene in the content, and a new experience can be provided to the user. Furthermore, by linking the display portion 8302 with a vibration module provided in the housing 8301, a more realistic display can be achieved.

[0486] Note that the electronic device 8300 may have two display units 8302 as shown in FIG. 34D.

[0487] By having two display units 8302, the user can view one display unit per eye. This allows high-resolution images to be displayed, even when performing 3D display using parallax, for example. Furthermore, the display unit 8302 is curved in an arc shape roughly centered on the user's eye. This allows the distance from the user's eye to the display surface of the display unit to be constant, allowing the user to view more natural images. Even if the brightness and chromaticity of light from the display unit change depending on the viewing angle, this effect can be virtually ignored because the user's eye is positioned normal to the display surface of the display unit, allowing for more realistic images to be displayed.

[0488] The electronic device 6500 shown in FIG. 35A is a portable information terminal that can be used as a smartphone.

[0489] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0490] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0491] FIG. 35B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0492] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0493] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0494] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0495] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0496] 35C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0497] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0498] 35C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0499] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0500] 35D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0501] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0502] 35E and 35F show an example of digital signage.

[0503] 35E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0504] 35F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0505] 35E and 35F, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0506] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0507] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0508] 35E and 35F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0509] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0510] The electronic device shown in Figures 36A to 36G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0511] The electronic devices shown in Figures 36A to 36G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0512] The electronic devices shown in Figures 36A to 36G will be described in detail below.

[0513] FIG. 36A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 36A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0514] 36B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is placed in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0515] 36C is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0516] FIG. 36D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a wirelessly capable headset. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0517] 36E to 36G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 36E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 36G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 36F is a perspective view of a state in the process of changing from one of FIG. 36E and FIG. 36G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0518] 37A includes a housing 2801, a housing 2802, a display portion 2803, a keyboard 2804, a pointing device 2805, and the like. A secondary battery 2807 is provided inside the housing 2801, and a secondary battery 2806 is provided inside the housing 2802. The display device of one embodiment of the present invention is applied to the display portion 2803, and the display portion 2803 has a touch panel function. As shown in FIG. 37B, the housings 2801 and 2802 can be removed from the personal computer 2800, and the personal computer 2800 can be used as a tablet terminal using only the housing 2802.

[0519] In a modification of the personal computer shown in Fig. 37C , a flexible display is applied to the display portion 2803. The secondary battery 2806 can be made bendable by using a flexible film for the exterior body. This allows the housing 2802, the display portion 2803, and the secondary battery 2806 to be folded and used as shown in Fig. 37C . In this case, part of the display portion 2803 can also be used as a keyboard as shown in Fig. 37C .

[0520] The housing 2802 can also be folded so that the display portion 2803 faces inward as shown in FIG. 37D, or so that the display portion 2803 faces outward as shown in FIG. 37E.

[0521] FIG. 37F is a perspective view showing a vehicle steering wheel. The steering wheel 41 includes a rim 42, a hub 43, spokes 44, and a shaft 45. A display unit 20 is provided on the surface of the hub 43. Of the three spokes 44, the lower spoke 44 is provided with a light-emitting / receiving unit 20a, the left spoke 44 is provided with multiple light-emitting / receiving units 20b, and the right spoke 44 is provided with multiple light-emitting / receiving units 20c. By holding the fingers of a hand 35 over the light-emitting / receiving unit 20a, the driver's fingerprint information can be acquired and used for authentication. Furthermore, by touching the light-emitting / receiving units 20b and 20c, the vehicle's navigation system, audio system, and communication system can be operated. Various operations are also possible, such as adjusting the rearview mirror, adjusting the side mirrors, turning the interior lights on and off and adjusting their brightness, and opening and closing the windows.

[0522] This embodiment mode can be combined with other embodiment modes as appropriate.

[0523] In this embodiment, the display device shown in Embodiment Mode 1 is reproduced in a simulation, and a result of displaying an image will be described.

[0524] 38A and 38B are top views showing the configuration of a display device reproduced in this example. The display device shown in FIG. 38A corresponds to the display device 100 shown in FIG. 1 of Embodiment 1. FIG. 38A shows subpixels 110 in the i-th row and j-th column to the i+1-th row and j+5-th column (where i is an integer greater than or equal to 1, and j is 1 or a multiple of 6+1). The display device shown in FIG. 38B combines two rows and two columns of subpixels 110 of the same color in FIG. 38A into a single subpixel 110. The display device shown in FIG. 38A is assumed to have an EL film divided by photolithography or the like, while the display device shown in FIG. 38B is assumed to have no such division.

[0525] 38A and 38B, subpixel 110R indicates a subpixel 110 that emits red light, subpixel 110G indicates a subpixel 110 that emits green light, and subpixel 110B indicates a subpixel 110 that emits blue light. The same applies to the subsequent drawings.

[0526] Fig. 39A1 is an image displayed in a simulation by reproducing the display device shown in Fig. 38A. Fig. 39A2 is an enlarged view of the portion enclosed by the white square in Fig. 39A1. Fig. 39B1 is an image displayed in a simulation by reproducing the display device shown in Fig. 38B. Fig. 39B2 is an enlarged view of the portion enclosed by the white square in Fig. 39B1.

[0527] As shown in FIGS. 39A2 and 39B2, it was confirmed in simulation that the display device shown in FIG. 38A can display an image that appears to have higher resolution than the display device shown in FIG. 38B.

[0528] In this example, the image display results when the display device shown in Fig. 38A was driven by the method shown in Fig. 12 of embodiment 1 were verified by simulation. First, a display device having the configuration shown in Fig. 40 was assumed as display device 400 (step S1). In Fig. 40, the subpixel emitting red light is designated R, the subpixel emitting green light is designated G, and the subpixel emitting blue light is designated B.

[0529] Here, the luminance value of the sub-pixel 110R[i,j], the luminance value of the sub-pixel 110G[i,j+2], the luminance value of the sub-pixel 110G[i,j+3], and the luminance value of the sub-pixel 110B[i,j+5] shown in FIG. 38A are respectively the luminance values ​​of the R ｉ，ｊ The brightness value of G ｉ，ｊ＋１ The brightness value of G ｉ，ｊ＋４ the brightness value of B ｉ，ｊ＋５ The luminance value of the sub-pixel 110R[i+1, j], the luminance value of the sub-pixel 110G[i+1, j+2], the luminance value of the sub-pixel 110G[i+1, j+3], and the luminance value of the sub-pixel 110B[i+1, j+5] are the same as the luminance values ​​of the sub-pixels R[i+1, j], 110G[i+1, j+2], 110G[i+1, j+3], and 110B[i+1, j+5] shown in FIG. ｉ＋１，ｊ The brightness value of G ｉ＋１，ｊ＋１ The brightness value of G ｉ＋１，ｊ＋４ the brightness value of B ｉ＋１，ｊ＋５ The brightness value was set to the same as that of

[0530] The luminance value of the sub-pixel 110R[i, j+1] shown in FIG. 38A was calculated using the following formula (3), and the luminance value of the sub-pixel 110B[i, j+4] was calculated using the following formula (4) (step S2). ｉ，ｊ ), L(Rｉ，ｊ＋３ ), L(B ｉ，ｊ＋２ ), and L(B ｉ，ｊ＋５ ) are the R ｉ，ｊ The brightness value of R ｉ，ｊ＋３ luminance value of B ｉ，ｊ＋２ the brightness value of B ｉ，ｊ＋５ Indicates the brightness value of

[0531]

[0532]

[0533] The luminance value of the subpixel 110R[i+1, j+1] was calculated by replacing i with i+1 in the above formula (3), and the luminance value of the subpixel 110B[i+1, j+4] was calculated by replacing i with i+1 in the above formula (4).

[0534] Based on the brightness values ​​shown above, an image was displayed in a simulation (step S3).

[0535] Fig. 41A1 is an image displayed by simulating the display device shown in Fig. 38A driven by the method shown in Fig. 12. Fig. 41A2 is an enlarged view of the portion enclosed by the white square in Fig. 41A1. Fig. 41B1 is an image displayed by simulating the display device shown in Fig. 38A without correcting the luminance values ​​by the method shown in Fig. 12, and is the same image as Fig. 39B1. Fig. 41B2 is an enlarged view of the portion enclosed by the white square in Fig. 41B1, and is the same image as Fig. 39B2.

[0536] As shown in FIGS. 41A2 and 41B2, it was confirmed that by correcting the luminance value using the method shown in FIG. 12, it is possible to display an image with smooth edges, for example.

[0537] In this embodiment, the display device shown in Embodiment Mode 1 is reproduced in a simulation, and a result of displaying an image will be described.

[0538] Figures 42A and 42B are top views showing the configuration of a display device reproduced in this example. The display device shown in Figure 42A corresponds to the display device 100 shown in Figure 14A of embodiment 1. The display device shown in Figure 42B combines two rows and two columns of sub-pixels 110 of the same color in Figure 42A into one sub-pixel 110. The display device shown in Figure 42A is assumed to be a display device in which the EL film has been divided by photolithography or the like, while the display device shown in Figure 42B is assumed to be a display device in which such division has not been performed.

[0539] Fig. 43A1 is an image displayed in a simulation by reproducing the display device shown in Fig. 42A. Fig. 43A2 is an enlarged view of the part enclosed by the white square in Fig. 43A1. Fig. 43B1 is an image displayed in a simulation by reproducing the display device shown in Fig. 42B. Fig. 43B2 is an enlarged view of the part enclosed by the white square in Fig. 43B1.

[0540] As shown in FIGS. 43A2 and 43B2, it was confirmed in simulation that the display device shown in FIG. 42A can display an image that appears to have higher resolution than the display device shown in FIG. 42B.

[0541] In this embodiment, the display device shown in Embodiment Mode 1 is reproduced in a simulation, and a result of displaying an image will be described.

[0542] Figures 44A and 44B are top views showing the configuration of a display device reproduced in this example. The display device shown in Figure 44A corresponds to the display device 100 shown in Figure 16 of embodiment 1. The display device shown in Figure 44B combines two rows and two columns of sub-pixels 110 of the same color in Figure 44A into one sub-pixel 110. The display device shown in Figure 44A is assumed to be a display device in which the EL film has been divided by photolithography or the like, while the display device shown in Figure 44B is assumed to be a display device in which such division has not been performed.

[0543] Fig. 45A1 is an image displayed in a simulation by reproducing the display device shown in Fig. 44A. Fig. 45A2 is an enlarged view of the part enclosed by the white square in Fig. 45A1. Fig. 45B1 is an image displayed in a simulation by reproducing the display device shown in Fig. 44B. Fig. 45B2 is an enlarged view of the part enclosed by the white square in Fig. 45B1.

[0544] As shown in Figures 45A2 and 45B2, it was confirmed in simulation that the display device shown in Figure 44A can display an image that appears to have higher resolution than the display device shown in Figure 44B.

[0545] In this embodiment, the display device shown in Embodiment Mode 1 is reproduced in a simulation, and a result of displaying an image will be described.

[0546] 46A and 46B are top views showing the configuration of a display device reproduced in this example. The display device shown in FIG. 46A corresponds to the display device 100 shown in FIG. 20 of embodiment 1. In the display device shown in FIG. 46B, the subpixels 110a arranged in four rows and two columns in FIG. 46A are grouped together as a single subpixel 110a, and the subpixels 110c arranged in four rows and two columns in FIG. 46A are grouped together as a single subpixel 110c. In addition, in the display device shown in FIG. 46B, the subpixels 110b arranged in two rows and two columns in FIG. 46A are grouped together as a single subpixel 110b, and the subpixels 110d arranged in two rows and two columns in FIG. 46A are grouped together as a single subpixel 110d. The display device shown in FIG. 46A is assumed to be a display device in which the EL film is divided by photolithography or the like, while the display device shown in FIG. 46B is assumed to be a display device in which such division is not performed.

[0547] Fig. 47A1 is an image displayed in a simulation by reproducing the display device shown in Fig. 46A. Fig. 47A2 is an enlarged view of the part enclosed by the white square in Fig. 47A1. Fig. 47B1 is an image displayed in a simulation by reproducing the display device shown in Fig. 46B. Fig. 47B2 is an enlarged view of the part enclosed by the white square in Fig. 47B1.

[0548] As shown in FIGS. 47A2 and 47B2, it was confirmed in simulation that the display device shown in FIG. 46A can display an image that appears to have higher resolution than the display device shown in FIG. 46B.

[0549] In this embodiment, the display device shown in Embodiment Mode 1 is reproduced in a simulation, and a result of displaying an image will be described.

[0550] 48A and 48B are top views showing the configuration of a display device reproduced in this example. The display device shown in FIG. 48A corresponds to the display device 100 shown in FIG. 21 of embodiment 1. The display device shown in FIG. 48B combines the 2×2 subpixels 110a in FIG. 48A into one subpixel 110a, and the 2×2 subpixels 110c in FIG. 48A into one subpixel 110c. The display device shown in FIG. 48B combines the 2 rows and 2 columns of subpixels 110b in FIG. 48A into one subpixel 110b, and the 2 rows and 2 columns of subpixels 110d in FIG. 48A into one subpixel 110d. The display device shown in FIG. 48A is assumed to be a display device in which the EL film is divided by photolithography or the like, while the display device shown in FIG. 48B is assumed to be a display device in which such division is not performed.

[0551] Fig. 49A1 is an image displayed in a simulation by reproducing the display device shown in Fig. 48A. Fig. 49A2 is an enlarged view of the portion enclosed by the white square in Fig. 49A1. Fig. 49B1 is an image displayed in a simulation by reproducing the display device shown in Fig. 48B. Fig. 49B2 is an enlarged view of the portion enclosed by the white square in Fig. 49B1.

[0552] As shown in FIGS. 49A2 and 49B2, it was confirmed in simulation that the display device shown in FIG. 48A can display an image that appears to have higher resolution than the display device shown in FIG. 48B.

[0553] 20a: light-emitting / receiving unit, 20b: light-emitting / receiving unit, 20c: light-emitting / receiving unit, 20: display unit, 35: hand, 41: handle, 42: rim, 43: hub, 44: spokes, 45: shaft, 100: display device, 101: layer, 103[1,1]: pixel, 103[1,2]: pixel, 103[2,1]: pixel, 103[2,2]: pixel, 103[3,3]: pixel, 103[4,4]: pixel, 103: pixel, 110a: sub-pixel, 110a[1,1]: sub-pixel, 110a[1,2]: sub-pixel, 110a[2,1]: sub-pixel, 110a[2,2]: sub-pixel, 110B: sub-pixel, 110b: sub-pixel Pixel, 110b[1,3]: subpixel, 110b[1,4]: subpixel, 110b[2,3]: subpixel, 110b[2,4]: subpixel, 110B[i+1,j+4]: subpixel, 110B[i+1,j+5]: subpixel, 110B[i,j+4]: subpixel, 110B[i,j+5]: subpixel, 110c: subpixel, 110c[1,5]: subpixel, 110c[1,6]: subpixel, 110c[2,5]: subpixel, 110c[2,6]: subpixel, 110d: subpixel, 110G: subpixel, 110G[i+1,j+2]: subpixel, 110G[i+1,j+3]: subpixel, 110G [i, j+2]: subpixel, 110G[i, j+3]: subpixel, 110R: subpixel, 110R[i+1, j+1]: subpixel, 110R[i+1, j]: subpixel, 110R[i, j+1]: subpixel, 110R[i, j]: subpixel, 110: subpixel, 111: pixel electrode, 112: conductive layer, 113a: EL layer, 113b: EL layer, 113c: EL layer, 113: EL layer, 114: common layer, 115: common electrode, 116: tapered portion, 117: light-shielding layer, 118A: sacrificial film, 118: sacrificial layer, 119A: sacrificial film, 119: sacrificial layer, 120: substrate, 121: insulating layer, 122: Resin layer, 123: connection electrode, 124: microlens array, 125A: insulating film, 125: insulating layer, 126: conductive layer, 127A: insulating film, 127: insulating layer, 128: layer, 129: conductive layer, 130a: light-emitting element, 130b: light-emitting element, 130c: light-emitting element, 130: light-emitting element, 131: protective layer, 140: connection portion, 142: adhesive layer, 150: light-receiving element, 151: substrate, 152: substrate, 153: insulating layer, 155: PD layer, 162: display portion, 164: circuit portion, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 180a: EL film, 180b: EL film,180c: EL film, 180: EL film, 181a: nozzle, 181b: nozzle, 181c: nozzle, 182a: droplet, 182b: droplet, 182c: droplet, 190: resist mask, 191a: FMM, 191b: FMM, 191c: FMM, 191: FMM, 201: transistor, 204: connection portion, 205: transistor, 209: transistor, 210: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer , 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display unit, 282: circuit unit, 283a: pixel circuit, 283: pixel circuit unit, 28 4a: pixel, 284: pixel portion, 285: terminal portion, 286: wiring portion, 290: FPC, 291: substrate, 292: substrate, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 32 9: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 400: display device, 403[1,1]: pixel, 403[1,2]: pixel, 403[2,1]: pixel, 403[2,2]: pixel, 403: pixel, 700A: electronic device, 700B: electronic device, 721: housing, 723: wearing part, 727: earphone part, 750: earphone, 751: display panel, 753: optical member, 756: display area,757: frame, 758: nose pad, 772: lower electrode, 785: layer, 786a: EL layer, 786b: EL layer, 786: EL layer, 788: upper electrode, 800A: electronic device, 800B: electronic device, 820: display unit, 821: housing, 822: communication unit, 823: wearing unit, 824: control unit, 825: imaging unit, 827: earphone unit, 832: lens, 2800: personal computer, 2801: housing, 2802: housing, 2803: display unit, 2804: keyboard, 2805: pointing device, 2806: secondary battery, 2807: secondary battery, 44 11: light-emitting layer, 4412: light-emitting layer, 4413: light-emitting layer, 4420: layer, 4421: layer, 4422: layer, 4430: layer, 4431: layer, 4432: layer, 4440: charge generation layer, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7 000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control device, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal device, 7400: Digital signage, 7401: Pillar, 7411: Information terminal device, 8300: Electronic device, 8301: Housing, 8302: Display unit, 8303: Operation button, 8304: Fixture , 8305: Lens, 8306: Dial, 8307: Dial, 8308: Drive unit, 8310: User, 8311: User, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9103: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. a first pixel electrode, a second pixel electrode, a third pixel electrode, and a fourth pixel electrode; a first EL layer on the first pixel electrode, a second EL layer on the second pixel electrode, a third EL layer on the third pixel electrode, and a fourth EL layer on the fourth pixel electrode; a common layer on the first to fourth EL layers and on the insulating layer; and a common electrode on the common layer; the first EL layer, the second EL layer, the third EL layer, and the fourth EL layer are arranged adjacent to each other in this order in one direction, the common layer has at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer; the first EL layer and the second EL layer emit light of the same color; the third EL layer and the fourth EL layer emit light of the same color; The third and fourth EL layers emit light of a different color from the first and second EL layers.

2. In claim 1, a first transistor, a second transistor, a third transistor, and a fourth transistor; one of a source and a drain of the first transistor is electrically connected to the first pixel electrode; one of a source and a drain of the second transistor is electrically connected to the second pixel electrode; one of a source and a drain of the third transistor is electrically connected to the third pixel electrode; one of a source and a drain of the fourth transistor is electrically connected to the fourth pixel electrode; A display device in which one or more of the first to fourth transistors have a metal oxide in a channel formation region.

3. In claim 1 or 2, A display device comprising an insulating layer provided in a region between the first EL layer and the second EL layer, a region between the second EL layer and the third EL layer, and a region between the third EL layer and the fourth EL layer.

4. In claim 3, The insulating layer comprises an organic material.

5. In claim 3 or 4, The insulating layer includes a material having photosensitivity.